US2223203A - Dry plate element and method of forming same - Google Patents
Dry plate element and method of forming same Download PDFInfo
- Publication number
- US2223203A US2223203A US293812A US29381239A US2223203A US 2223203 A US2223203 A US 2223203A US 293812 A US293812 A US 293812A US 29381239 A US29381239 A US 29381239A US 2223203 A US2223203 A US 2223203A
- Authority
- US
- United States
- Prior art keywords
- blocking layer
- layer
- natural
- selenium
- dry plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title description 14
- 230000000903 blocking effect Effects 0.000 description 61
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 25
- 239000005864 Sulphur Substances 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 25
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 24
- 239000011669 selenium Substances 0.000 description 24
- 229910052711 selenium Inorganic materials 0.000 description 24
- 239000000463 material Substances 0.000 description 19
- 229910052714 tellurium Inorganic materials 0.000 description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002966 varnish Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910000634 wood's metal Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/42—Grouping of primary cells into batteries
- H01M6/46—Grouping of primary cells into batteries of flat cells
- H01M6/48—Grouping of primary cells into batteries of flat cells with bipolar electrodes
Definitions
- My invention relates to dry plate elements or cells for rectiflers and the like of the selenium type, in which a semi-conductor layer consisting of or comprising selenium, or consisting of or comprising a material, such as tellurium, functioning similarly to selenium as a semi-conductor, is formed on a carrier electrode or plate without any substantial blocking layer between the semiconductor layer and the carrier electrode, the
- blocking layer means required for the rectification being on the free surface of the semi-conductor layer, that is, between the semi-conductor material and the counterelectrode.
- a superior blocking layer means is provided 5 by utilizing crystalline sulphur as material for an artificial blocking layer applied on the natural blocking layer.
- Fig. 1 illustrates graphically, in the operation in general of dry plate rectiers or cells. the relation of reverse current, or current in the blocking direction, to
- Fig. 2 illustrates graphically the relation of reverse current to voltage in cells of the selenium type or the like as employed heretofore, and the same relation in cells of the selenium type or the like constructed in accordance with 5 the present invention
- Fig. 3 illustrates a dry plate cell in accordance with the present invention.
- a varnish or artificial resin layer is applied to the natural blocking layer. It has been found that the natural blocking layer has a crystalline, therefore a. rough, structure. By employing a material which removes this roughness of structure, as is the case for example with varnishes and articial resins, no substantial improvement in cell operation'can be obtained.
- a blocking layer means which entails none of the above-mentioned disadvantages is obtained in accordance with the present invention by employing crystalline sulphur as material for the artificial blocking layer.
- the crystalline sulphur becomes attached and crystallizes still further on the latter layer.
- the roughness of the natural blocking layer is thereby very markedly increased.
- rectiers or cells of the selenium type or the like are produced wherein not only is the reverse current reduced as compared with such devices employing only the natural blocking layer, but at the same time a displacement of the critical range Vx to higher values by 50 per cent takes place.
- the load limit is substantially 18 volts in the blocking direction.
- the conditions illustrated in curve A of Fig. 2 are typical. At 18 volts, which in curve A is the critical voltage point Ver, a very steep rise in the reverse current curve occurs. For example, the reverse current at 20 volts in the case of a cell having a diameter of 45 mm. amounts to approximately 8O milliamperes.
- the reverse current at 20 volts amounts only to 10 milliamperes, a value of 80 milliamperes being reached only at voltages approximating 30. Therefore, the rectiiiers or cells constructed in accordance Wi-th the present invention may be loaded higher by 50 per cent than the prior usual rectifiers or cells, or to the range designated,v for example, by Vkz. ⁇ The resistance in the positive or ow direction is not thereby increased. On the contrary in cells constructed in accordance with the invention a substantial reduction of the internal resistance has been observed.
- the thickness of the sulphur layer is preferably of the order of l-5 cm.
- V a crystalline sulphur layer which is properly formed to enable the cell in which it is employed to operate at relatively high Avalues of vol-tage, loses its blocking properties to a very considerable extent if it is subsequently caused to fuse so that a smooth coating results. It is advantageous, therefore, to vaporize the sulphur on to the natural blocking layer in a few seconds, as thereby an unsuitable heating of the semiconductor surface is prevented and a highdegree of uniformity of the crystalline sulphur layer is attained.
- the requirements of low heating and rapid application, by vaporizlng, Aof the sulphur layer are best met by performing the vaporizing process at reduced pressure.
- the dry plate rectifier element or cell of the selenium or like type constructed in accordance with the invention comprises a carrier electrode I, of for example 45 mm. diameter and 1 mm. thickness, composed of any suitable material as nickel-plated iron, upon which is fused or otherwise suitably deposited a layer 2, approximately 0.1 mm. in thickness, of selenium or comprising selenium.
- the selenium coating is next subjected for five hours, under pressure at a temperature of the order of 120 degrees C., to a forming process.-
- a two hour heating of the selenium layer in air at approximately 210 degrees C. is required.
- the crystalline sulphur layer I of approximately -5 cm.
- the counterelectrode 5 and the carrier electrode i may be provided with suitable current leads 6 and 1.
- the crystalline sulphur layer 4 may be produced in other ways than as above described.
- the sulphur layer may be formed on the selenium surface by cataphoresis.
- known substitute materials therefor such as tellurium or material comprising 'tellurium may be employed.
- a dry plate element including a carrier electrode composed of material comprising selenium, a natural blocking layer on said semi-conductor layer, an artiilcial blocking layer composed of sulphur on said natural blocking layer, and a counterelectrode on said artificial blocking layer.
- a dry plate element including a carrier electrode, a semi-conductor layer on said electrode composed of material of the group of materials comprising selenium and tellurium, a natural blocking layer on said semi-conductor layer, an artificial blocking layer composed of sulphur on said natural blocking layer, and a counterelectrode on said articial blocking layer.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2223203X | 1938-09-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
US2223203A true US2223203A (en) | 1940-11-26 |
Family
ID=7990963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US293812A Expired - Lifetime US2223203A (en) | 1938-09-09 | 1939-09-07 | Dry plate element and method of forming same |
Country Status (4)
Country | Link |
---|---|
US (1) | US2223203A (fr) |
BE (1) | BE436338A (fr) |
FR (1) | FR886506A (fr) |
NL (2) | NL95164C (fr) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2468131A (en) * | 1945-05-12 | 1949-04-26 | Standard Telephones Cables Ltd | Method of manufacturing rectifier elements |
US2468527A (en) * | 1944-08-08 | 1949-04-26 | Hartford Nat Bank & Trust Co | Blocking-layer cell |
US2501798A (en) * | 1944-09-02 | 1950-03-28 | Hartford Nat Bank & Trust Co | Blocking-layer cell |
US2858239A (en) * | 1956-03-13 | 1958-10-28 | Siemens Ag | Method for producing selenium rectifiers |
DE970900C (de) * | 1944-05-24 | 1958-11-13 | Standard Elek K Lorenz Ag | Verfahren zur Herstellung unipolarer Leiter mit Selen oder Selenverbindungen als Halbleiter |
US2869057A (en) * | 1951-12-18 | 1959-01-13 | Itt | Electric current rectifier |
-
0
- NL NL57635D patent/NL57635C/xx active
- NL NL95164D patent/NL95164C/xx active
- BE BE436338D patent/BE436338A/xx unknown
-
1939
- 1939-09-07 US US293812A patent/US2223203A/en not_active Expired - Lifetime
-
1942
- 1942-10-05 FR FR886506D patent/FR886506A/fr not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE970900C (de) * | 1944-05-24 | 1958-11-13 | Standard Elek K Lorenz Ag | Verfahren zur Herstellung unipolarer Leiter mit Selen oder Selenverbindungen als Halbleiter |
US2468527A (en) * | 1944-08-08 | 1949-04-26 | Hartford Nat Bank & Trust Co | Blocking-layer cell |
US2501798A (en) * | 1944-09-02 | 1950-03-28 | Hartford Nat Bank & Trust Co | Blocking-layer cell |
US2468131A (en) * | 1945-05-12 | 1949-04-26 | Standard Telephones Cables Ltd | Method of manufacturing rectifier elements |
US2869057A (en) * | 1951-12-18 | 1959-01-13 | Itt | Electric current rectifier |
US2858239A (en) * | 1956-03-13 | 1958-10-28 | Siemens Ag | Method for producing selenium rectifiers |
Also Published As
Publication number | Publication date |
---|---|
BE436338A (fr) | |
FR886506A (fr) | 1943-10-18 |
NL95164C (fr) | |
NL57635C (fr) |
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