US2223203A - Dry plate element and method of forming same - Google Patents

Dry plate element and method of forming same Download PDF

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Publication number
US2223203A
US2223203A US293812A US29381239A US2223203A US 2223203 A US2223203 A US 2223203A US 293812 A US293812 A US 293812A US 29381239 A US29381239 A US 29381239A US 2223203 A US2223203 A US 2223203A
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Prior art keywords
blocking layer
layer
natural
selenium
dry plate
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Expired - Lifetime
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US293812A
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English (en)
Inventor
Brunke Fritz
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General Electric Co
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General Electric Co
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Publication date
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/42—Grouping of primary cells into batteries
    • H01M6/46—Grouping of primary cells into batteries of flat cells
    • H01M6/48—Grouping of primary cells into batteries of flat cells with bipolar electrodes

Definitions

  • My invention relates to dry plate elements or cells for rectiflers and the like of the selenium type, in which a semi-conductor layer consisting of or comprising selenium, or consisting of or comprising a material, such as tellurium, functioning similarly to selenium as a semi-conductor, is formed on a carrier electrode or plate without any substantial blocking layer between the semiconductor layer and the carrier electrode, the
  • blocking layer means required for the rectification being on the free surface of the semi-conductor layer, that is, between the semi-conductor material and the counterelectrode.
  • a superior blocking layer means is provided 5 by utilizing crystalline sulphur as material for an artificial blocking layer applied on the natural blocking layer.
  • Fig. 1 illustrates graphically, in the operation in general of dry plate rectiers or cells. the relation of reverse current, or current in the blocking direction, to
  • Fig. 2 illustrates graphically the relation of reverse current to voltage in cells of the selenium type or the like as employed heretofore, and the same relation in cells of the selenium type or the like constructed in accordance with 5 the present invention
  • Fig. 3 illustrates a dry plate cell in accordance with the present invention.
  • a varnish or artificial resin layer is applied to the natural blocking layer. It has been found that the natural blocking layer has a crystalline, therefore a. rough, structure. By employing a material which removes this roughness of structure, as is the case for example with varnishes and articial resins, no substantial improvement in cell operation'can be obtained.
  • a blocking layer means which entails none of the above-mentioned disadvantages is obtained in accordance with the present invention by employing crystalline sulphur as material for the artificial blocking layer.
  • the crystalline sulphur becomes attached and crystallizes still further on the latter layer.
  • the roughness of the natural blocking layer is thereby very markedly increased.
  • rectiers or cells of the selenium type or the like are produced wherein not only is the reverse current reduced as compared with such devices employing only the natural blocking layer, but at the same time a displacement of the critical range Vx to higher values by 50 per cent takes place.
  • the load limit is substantially 18 volts in the blocking direction.
  • the conditions illustrated in curve A of Fig. 2 are typical. At 18 volts, which in curve A is the critical voltage point Ver, a very steep rise in the reverse current curve occurs. For example, the reverse current at 20 volts in the case of a cell having a diameter of 45 mm. amounts to approximately 8O milliamperes.
  • the reverse current at 20 volts amounts only to 10 milliamperes, a value of 80 milliamperes being reached only at voltages approximating 30. Therefore, the rectiiiers or cells constructed in accordance Wi-th the present invention may be loaded higher by 50 per cent than the prior usual rectifiers or cells, or to the range designated,v for example, by Vkz. ⁇ The resistance in the positive or ow direction is not thereby increased. On the contrary in cells constructed in accordance with the invention a substantial reduction of the internal resistance has been observed.
  • the thickness of the sulphur layer is preferably of the order of l-5 cm.
  • V a crystalline sulphur layer which is properly formed to enable the cell in which it is employed to operate at relatively high Avalues of vol-tage, loses its blocking properties to a very considerable extent if it is subsequently caused to fuse so that a smooth coating results. It is advantageous, therefore, to vaporize the sulphur on to the natural blocking layer in a few seconds, as thereby an unsuitable heating of the semiconductor surface is prevented and a highdegree of uniformity of the crystalline sulphur layer is attained.
  • the requirements of low heating and rapid application, by vaporizlng, Aof the sulphur layer are best met by performing the vaporizing process at reduced pressure.
  • the dry plate rectifier element or cell of the selenium or like type constructed in accordance with the invention comprises a carrier electrode I, of for example 45 mm. diameter and 1 mm. thickness, composed of any suitable material as nickel-plated iron, upon which is fused or otherwise suitably deposited a layer 2, approximately 0.1 mm. in thickness, of selenium or comprising selenium.
  • the selenium coating is next subjected for five hours, under pressure at a temperature of the order of 120 degrees C., to a forming process.-
  • a two hour heating of the selenium layer in air at approximately 210 degrees C. is required.
  • the crystalline sulphur layer I of approximately -5 cm.
  • the counterelectrode 5 and the carrier electrode i may be provided with suitable current leads 6 and 1.
  • the crystalline sulphur layer 4 may be produced in other ways than as above described.
  • the sulphur layer may be formed on the selenium surface by cataphoresis.
  • known substitute materials therefor such as tellurium or material comprising 'tellurium may be employed.
  • a dry plate element including a carrier electrode composed of material comprising selenium, a natural blocking layer on said semi-conductor layer, an artiilcial blocking layer composed of sulphur on said natural blocking layer, and a counterelectrode on said artificial blocking layer.
  • a dry plate element including a carrier electrode, a semi-conductor layer on said electrode composed of material of the group of materials comprising selenium and tellurium, a natural blocking layer on said semi-conductor layer, an artificial blocking layer composed of sulphur on said natural blocking layer, and a counterelectrode on said articial blocking layer.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Thyristors (AREA)
US293812A 1938-09-09 1939-09-07 Dry plate element and method of forming same Expired - Lifetime US2223203A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2223203X 1938-09-09

Publications (1)

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US2223203A true US2223203A (en) 1940-11-26

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US (1) US2223203A (fr)
BE (1) BE436338A (fr)
FR (1) FR886506A (fr)
NL (2) NL57635C (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2468527A (en) * 1944-08-08 1949-04-26 Hartford Nat Bank & Trust Co Blocking-layer cell
US2468131A (en) * 1945-05-12 1949-04-26 Standard Telephones Cables Ltd Method of manufacturing rectifier elements
US2501798A (en) * 1944-09-02 1950-03-28 Hartford Nat Bank & Trust Co Blocking-layer cell
US2858239A (en) * 1956-03-13 1958-10-28 Siemens Ag Method for producing selenium rectifiers
DE970900C (de) * 1944-05-24 1958-11-13 Standard Elek K Lorenz Ag Verfahren zur Herstellung unipolarer Leiter mit Selen oder Selenverbindungen als Halbleiter
US2869057A (en) * 1951-12-18 1959-01-13 Itt Electric current rectifier

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970900C (de) * 1944-05-24 1958-11-13 Standard Elek K Lorenz Ag Verfahren zur Herstellung unipolarer Leiter mit Selen oder Selenverbindungen als Halbleiter
US2468527A (en) * 1944-08-08 1949-04-26 Hartford Nat Bank & Trust Co Blocking-layer cell
US2501798A (en) * 1944-09-02 1950-03-28 Hartford Nat Bank & Trust Co Blocking-layer cell
US2468131A (en) * 1945-05-12 1949-04-26 Standard Telephones Cables Ltd Method of manufacturing rectifier elements
US2869057A (en) * 1951-12-18 1959-01-13 Itt Electric current rectifier
US2858239A (en) * 1956-03-13 1958-10-28 Siemens Ag Method for producing selenium rectifiers

Also Published As

Publication number Publication date
FR886506A (fr) 1943-10-18
BE436338A (fr)
NL57635C (fr)
NL95164C (fr)

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