US2211188A - Manufacture of alternating current rectifiers of the dry surface contact type - Google Patents

Manufacture of alternating current rectifiers of the dry surface contact type Download PDF

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Publication number
US2211188A
US2211188A US270200A US27020039A US2211188A US 2211188 A US2211188 A US 2211188A US 270200 A US270200 A US 270200A US 27020039 A US27020039 A US 27020039A US 2211188 A US2211188 A US 2211188A
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United States
Prior art keywords
boron
copper
alternating current
manufacture
surface contact
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Expired - Lifetime
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US270200A
Inventor
Williams Albert Leslie
Thompson Leslie Ernest
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Hitachi Rail STS USA Inc
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Union Switch and Signal Inc
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Publication of US2211188A publication Critical patent/US2211188A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164—Oxidation and subsequent heat treatment of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation

Definitions

  • This invention relates to the manufacture of alternating current rectifiers of the dry surface contact type, comprising a body of metal having an oxide of the metal'formed directly thereon by subjecting the body to the action of an oxidising atmosphere, and has for its object to improve the process of oxidisation'where'by certain important advantages are obtained.
  • An important desirable quality in an oxide N rectifier is that its electrical resistance in the w amongst other'conditions, upon the amount of reverse direction of current flow should be stable and not liable to appreciable creep or continuous change when voltage is applied, and experience indicates that this creep is dependent free oxygen occluded in the oxide film or layer after its formation.
  • a substance capable of reducing the amount of free oxygen occluded in the oxide layer during its formation is arranged to be introduced into the oxidising;
  • the boron or boron compound may for instance be injected into the oxidising funnace chamber in the form of vapour or a cloud of finely divided particles.
  • a suit- 40 able receptacle or reservoir containing the boron or boron compound may be located within the furnace chamber, or the copper blanks, or their supports or carriers may be immersed in a suitable solution of a boron compound prior to the oxidising process.
  • the furnace chamber employed is preferably provided with a non-, porous lining and with arrangements for effecting a circulation or agitation of the oxidising atmosphere within the chamber, for example, by
  • cupric oxide is reduced, only an extremely thin superficial layer of this compound being formed.
  • the amount of boron utilised will evidently depend upon particular conditions, but is in any case extremely small relative to the amount of oxygen in the oxidising atmosphere.
  • the process for manufacturing a copper oxide rectifier which comprises subjecting a copper body to the action of an oxidizing atmosphere into which boron or a boron compound has been introduced in the form of a vapor or cloud to reduce the amount of free oxygen occluded in the oxide layer during its formation.
  • the process for manufacturing a copper oxide rectifier which comprises heating a copper body in an oxidizing atmosphere in a furnace having located in the oxidizing chamber a receptacle containing boron'or a boron compound.

Description

' Patented Aug. 13', 1940 MANUFACTURED! ALTERNATING CURRENT V RECTIFIERS OF THE DRY SURFACE CON- Albert Leslie Williams and Leslie Ernest Thompson, London, England, assignors, by mesne assignments, to The Union Switch & Signal Company, Swissvale, Pa a corporation of Pennsyl vania No Drawing. Application April 26, 1939, Serial No. 270,200. In Great Britain May 14, 1938 11 Claims.
This invention relates to the manufacture of alternating current rectifiers of the dry surface contact type, comprising a body of metal having an oxide of the metal'formed directly thereon by subjecting the body to the action of an oxidising atmosphere, and has for its object to improve the process of oxidisation'where'by certain important advantages are obtained.
An important desirable quality in an oxide N rectifier is that its electrical resistance in the w amongst other'conditions, upon the amount of reverse direction of current flow should be stable and not liable to appreciable creep or continuous change when voltage is applied, and experience indicates that this creep is dependent free oxygen occluded in the oxide film or layer after its formation.
According to the present invention a substance capable of reducing the amount of free oxygen occluded in the oxide layer during its formation is arranged to be introduced into the oxidising;
' atmosphere employed. In particular, in the case of copper oxide rectifiers comprising a copper body or blank provided with a coating or layer of cuprous oxide formed directly thereon by heating the blank to a suitable temperature in an oxidising atmosphere, advantageous results are obtained by introduction of a small quantity of the element boron either 'in the combined or uncomblned state into the oxidising furnace during the heat treatment of the copperblanks.
In carrying the invention into practice, the boron either uncombined or combined in the form of boric acid or borax for example, may be introduced into the oxidising atmosphere in var= ious ways. The boron or boron compound may for instance be injected into the oxidising funnace chamber in the form of vapour or a cloud of finely divided particles. Alternatively, a suit- 40 able receptacle or reservoir containing the boron or boron compound may be located within the furnace chamber, or the copper blanks, or their supports or carriers may be immersed in a suitable solution of a boron compound prior to the oxidising process.
In order to ensure the uniform distribution of the added substance the furnace chamber employed is preferably provided with a non-, porous lining and with arrangements for effecting a circulation or agitation of the oxidising atmosphere within the chamber, for example, by
means of an injected stream of air-or oxygen.
The addition of boron to the oxidising atmosphere in the case of copper oxide rectifier-s, is
g found to eifect a considerable reduction in the initial reverse current and the reverse creep at all impressed voltage while the uniformity and crystalline structure of the cuprous oxide formed is much improved. 1
Furthermore, the undesired formation of cupric oxide is reduced, only an extremely thin superficial layer of this compound being formed.
Although the initial forward resistance of the rectifier element is increased by the use of boron to an extent dependent upon the amount of this substance employed, this disadvantage can be offset by reducing the thickness of the cuprous oxide film which is permissible owing to its superior quality and to the small amount of cupric oxide formed asabove explained.
The amount of boron utilised will evidently depend upon particular conditions, but is in any case extremely small relative to the amount of oxygen in the oxidising atmosphere.
It will be understood that similar advantageous results may probably be obtained by the addition of substances other than boron which has however been definitely determined to be particularly suitable in the case of copper oxide rectiflers. The invention is however not limited in this and other respects to the particular processes and arrangements above described is way of example.
Having now particularly described and ascer= tained the nature of our said invention and in what manner the same is to be performed, we declare that what we claim is:
1. The process for manufacturing a copper oxide rectifier whiohcomprises subjecting a copperbody to the action of an oxidizing atmosphere into which the element boron in a combined or an uncombined state has been introduced to reduce the amount of free oxygen occluded in the oxide layer during its formation.
2. The process for manufacturing a copper oxide rectifier which comprises subjecting a copper body to the action of an oxidizing atmosphere into which boron or a boron compound has been introduced in the form of a vapor or cloud to reduce the amount of free oxygen occluded in the oxide layer during its formation.
3. The process for manufacturing a copper oxide rectifier which comprises heating a copper body in an oxidizing atmosphere in a furnace having located in the oxidizing chamber a receptacle containing boron'or a boron compound.
4. The process for manufacturing a copper oxide rectifier which consists in. subjecting a copper bodytothe action of an oxidizing at mosphere while mounted on a support or carrier which has previously been immersed in a solution of a boron compound.
5. The process for manufacturing a copper oxide rectifier which consists in subjecting a copper body to the action of an oxidizing atmosphere into which borax or boric acid has been introduced.
6. The process for manufacturing a copper oxide rectifier which consists in heating a copper body in a furnace in an oxidizing atmosphere into which boron or a boron compound has been introduced, the oxidizing atmosphere being circulated or agitated by means of an injected stream of air or oxygen.
7. The process for manufacturing a copper oxide rectifier which consists in subjecting a copper body to the action of an oxidizing atmosphere ,into which boron or a boron compound has been introduced to effect a reduction in the initial reverse current at all impressed voltages.
8. The process for manufacturing a copper oxide rectifier which consists in subjecting a copper body to the action of an oxidizing atmosphere into which boron or a boron compound has been introduced to effect a reduction in the reverse creep at all impressed voltages.
9. The process for manufacturing a copper oxide rectifier which consists in subjecting a copper body to the action of an oxidizing atmosphere into which boron or a boron compound has been introduced to improve the uniformity and crystalline structure of the cuprous oxide which is formed.
10. The process for manufacturing a copper oxide rectifier which consists in subjecting a copper body to the action of an oxidizing atmosphere into which boron or a boron compound has been introduced to reduce the formation of cupric oxide.
11. The process for manufacturing a copper oxide rectifier which consists in subjecting a copper blank to the action of an oxidizing atmosphere into which has been introduced boron in an amount which is extremely small relative to the amount of oxygen in the oxidizing atmosphere.
ALBERT LESLIE WILLIAMS.
LESLIE ERNEST THOMPSON.
US270200A 1938-05-14 1939-04-26 Manufacture of alternating current rectifiers of the dry surface contact type Expired - Lifetime US2211188A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB14443/38A GB514751A (en) 1938-05-14 1938-05-14 Improvements in the manufacture of alternating current rectifiers of the dry surface contact type

Publications (1)

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US2211188A true US2211188A (en) 1940-08-13

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Family Applications (1)

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US (1) US2211188A (en)
FR (1) FR871351A (en)
GB (1) GB514751A (en)

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Publication number Publication date
GB514751A (en) 1939-11-16
FR871351A (en) 1942-04-22

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