US20240183025A1 - Film forming apparatus and method for reducing arcing - Google Patents
Film forming apparatus and method for reducing arcing Download PDFInfo
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- US20240183025A1 US20240183025A1 US18/406,062 US202418406062A US2024183025A1 US 20240183025 A1 US20240183025 A1 US 20240183025A1 US 202418406062 A US202418406062 A US 202418406062A US 2024183025 A1 US2024183025 A1 US 2024183025A1
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- 238000000034 method Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims abstract description 46
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000012545 processing Methods 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims description 28
- 238000005240 physical vapour deposition Methods 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 267
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- -1 quartz Chemical compound 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
Abstract
Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.
Description
- This application is a continuation application of U.S. patent application Ser. No. 18/108,866 filed Feb. 13, 2023, which a continuation application of U.S. patent application Ser. No. 17/330,946 filed May 26, 2021, which are incorporated by reference in its entirety.
- Physical vapor deposition (PVD) is a process used for deposition of materials atop a substrate. A conventional PVD process may include bombarding a target, which contains a source material to be deposited on the substrate, with ions from a plasma of an inert gas. This bombardment causes the source material to be sputtered from the target and deposited onto the substrate. During the PVD process, a magnetron may be rotated near a backside of the target to facilitate sputtering.
- Arcing between the plasma and the substrate, chamber component, or target in the PVD process can cause significant substrate damage and defect contamination which limits wafer yields. Some PVD chambers may have a mechanism to interrupt the process when arcing is detected. However, such interruption reduces yields and adds significant cost, and therefore, is not entirely satisfactory.
- Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
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FIG. 1 is a cross-sectional view of a magnetic-controlled reactive sputter system in accordance with some embodiments. -
FIG. 2 is a schematic view illustrating the injection of a gas into the chamber in accordance with some embodiments. -
FIG. 3 is a cross-sectional view of a magnetic-controlled reactive sputter system in accordance with some embodiments. -
FIG. 4 is a cross-sectional view of a magnetic-controlled reactive sputter system in accordance with some embodiments. -
FIG. 5 a cross-sectional view of a magnetic-controlled reactive sputter system in accordance with some embodiments. -
FIGS. 6A-6B to 8A-8B are cross-sectional and front views of a portion of a gas injector in accordance with some embodiments. -
FIG. 9 is a flowchart of an algorithm for processing a substrate in a semiconductor manufacturing system, in accordance with some embodiments. - The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “over,” “on,” “top,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- While embodiments in this disclosure are described in the context of a sputter system for PVD processes, implementations of some aspects of the present disclosure may be used in other processes and/or in other chambers, such as chemical vapor deposition (CVD) chambers, plasma enhanced CVD chambers, atomic layer deposition (ALD) chambers, or any chamber in which gas dissociation and reaction may occur. A person having ordinary skill in the art will readily understand other modifications that may be made are contemplated with the scope of this disclosure.
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FIG. 1 is a cross-sectional view of a magnetic-controlled reactive sputter system 100 in accordance with some embodiments. The sputter system 100 may be any suitable PVD system, such as a direct current (DC) magnetron sputter system, a Radio Frequency (RF) capacitively coupled plasma (CCP) sputter system, or an Inductively Coupled Plasma (ICP) sputter system. The sputter system 100 has achamber 105 defining a space for processing asemiconductor substrate 102. Thesubstrate 102 is disposed on apedestal 101, which is located on one side of thechamber 105. Atarget 109 is disposed within thechamber 105 on a side opposite to thepedestal 101. Thetarget 109 is facing thepedestal 101 and separated from thepedestal 101 by a predetermined distance. Thetarget 109 may include any suitable metal and/or metal alloy for use in depositing a layer on thesubstrate 102. For example, thetarget 109 may include copper, tungsten, tantalum, tantalum nitride, titanium, copper aluminum alloy, or titanium aluminum alloy. - A
DC bias power 113 may be coupled to thetarget 109 to provide a bias voltage to thetarget 109. The bias voltage also ionizes a gas provided to thechamber 105 from agas source 103 and form aplasma 190 in thechamber 105. The bias voltage provided to thetarget 109 directs ionized species (e.g., ionized gas species 147) in theplasma 190 towards thetarget 109. Amagnetron 110 may be disposed proximate a backside of thetarget 109. Themagnetron 110 has asupport 122 attached to ashaft 123. Themagnetron 110 is rotated above thetarget 109 about theshaft 123 using a motor (not shown).Permanent magnets 115 are provided on thesupport 122 and generate a magnetic field within thechamber 105 near thetarget 109. The rotation of themagnetron 110, and thus the magnetic field, promote gas ionization near thetarget 109 and distribute even consumption of thetarget 109. - The
gas source 103 may contain one or more gas sources such as argon, nitrogen, or any high molecular weight gas or chemically inactive noble gas such as xenon. In some embodiments, thegas source 103 is an argon source. Thegas source 103 is fluidly connected to agas injector 112 via a mass flow controller (MFC) 126. Thegas injector 112 may be disposed at asidewall 151 of thechamber 105. The MFC 126 automatically controls the flow rate of the gas flowing to thegas injector 112 according to a pre-set flow rate. Avacuum port 127 is provided on thesidewall 151 of thechamber 105. Thevacuum port 127 is connected to avacuum pump 108 in order to provide low pressure environment in thechamber 105. A foreline (not shown) may be located between thevacuum port 127 and thevacuum pump 108 to abate the exhaust exiting thechamber 105. - In some embodiments where the sputter system 100 is an ICP sputter system, a plurality of coils 106 (106 a, 106 b, 106 c) or plasma ionizers may be disposed on the
sidewall 151 of thechamber 105 surround one or more regions between thetarget 109 and thepedestal 101. In one embodiment, the coils 106 include anupper coil 106 a, amiddle coil 106 b, and alower coil 106 c. Thecoils substrate 102. In some embodiments, the upper, middle, andlower coils sidewall 151 of thechamber 105. The upper, middle, andlower coils lower coils target 109. The sputtered metal atoms may be ionized under a predetermined frequency and a predetermined pressure. In some embodiments, the sputteredmetal atoms 149 are ionized under a high radio frequency between about 13.56 MHz and about 40 MHz, and a pressure between about 1 mTorr and about 150 mTorr. The frequency and pressure may vary to further increase the collision possibility and induce high ion density plasma. - In some embodiments,
magnets 107 may be optionally disposed on thesidewall 151 of thechamber 105 surrounding a region between the regions surrounded by theupper coils 106 a and themiddle coils 106 b. Themagnets 107 may surround thesidewall 151 of thechamber 105. The magnetic field generated by themagnets 107 can help confine the electrons in theplasma 190 at or near thetarget 109. Confining the electrons not only leads to a higher density plasma and increased deposition rates, but also prevents damage caused by direct impact of these electrons to thesubstrate 102 or to the growing layer. Themagnets 107 may also have an influence on the distribution of the ion flux to thesubstrate 102. The magnetic field generated by the coils 106 (e.g.,upper coil 106 a) in combination with themagnets 107 influences the magnetic field distributed by the rotatingpermanent magnets 115 of themagnetron 110, while the magnetic field generated by the coils 106 (e.g., middle andlower coils substrate 102. - While three
coils magnets 107. In some embodiments where themagnets 107 are omitted, two coils, such asupper coil 106 a and themiddle coil 106 b or thelower coil 106 c, may be used. - In some embodiments where the sputter system 100 is a RF CCP sputter system, the
pedestal 101 may be further connected to a highRF power source 111. In some embodiments, themagnetron 110 can be connected to a highRF power source 114. The highRF power source 111 provides a high RF power, such as RF power operating at a frequency of 13.56 MHz, 40 MHz, or 100 MHz, to thepedestal 101 to capacitively couple the RF energy into theplasma 190. The highRF power source 114 provides a high RF power, such as 13.56 MHz, 40 MHz, or 100 MHz, to themagnetron 110 to capacitively couple the RF energy into theplasma 190. Abias power 104 may be coupled to thepedestal 101 to provide a substrate bias for biasing thesubstrate 102. The substrate bias attracts the ionized metal atoms from thetarget 109 to thesubstrate 102. The ionized atoms may be controlled by the substrate bias to achieve high directional control. For a CCP sputter system, theRF power sources power 113 can also be coupled to themagnetron 110 in parallel. - In some embodiments where the sputter system 100 is a DC magnetron sputter system, the RF power may not need to be connected to the
magnetron 110. The DC biaspower 113 is coupled to themagnetron 110 for ionization and theRF power source 111 is connected to thepedestal 101 for providing the ion energy into the plasma. - A
distribution plate 121 may be optionally disposed within thechamber 105 between thetarget 109 and thepedestal 101. In some embodiments, thedistribution plate 121 is disposed between regions surrounded by theupper coil 106 a and themagnet 107. Thedistribution plate 121 includes a plurality of elongated holes spaced along the length of thedistribution plate 121 so as to evenly distribute the gas, ionized species and metal atoms within thechamber 105. - In various embodiments, the
gas injector 112 is configured to direct the gas (e.g., argon) into predetermined regions in thechamber 105. In some embodiments, the angle of thegas injector 112 can be actively controlled so that the gas stream is provided at an angle of about +90 degrees with respect to an imaginary horizontal line that is substantially parallel to the top surface of thepedestal 101. In other words, the angle of the gas stream provided by thegas injector 112 may range from about 90 degrees to about −90 degrees with respect to the imaginary line. The angled gas stream injection may be achieved by an angular motion of thegas injector 112, which may be controlled by anactuator 128. Theactuator 128 is in electrical communication with thegas injector 112. The angle of thegas injector 112 may be adjusted according to a given recipe, a real-time information of the gas injection and/or reactions in thechamber 105, and/or a process alert (e.g., increased risk of arcing) received by a controller (e.g., controller 124). For example, the recipe may require a greater amount of process gas to be provided to a first region within thechamber 105 than a second region within thechamber 105 that is different than the first region. The real-time information of the gas injection and/or reactions in thechamber 105 may include, but is not limited to, measurement of concentration of process gas at certain regions within thechamber 105, observation or development of undesired or unintended electric arcing at certain regions within thechamber 105, etc. In any case, the angle of thegas injector 112 may be controlled so that the gas stream (indicated byarrow 131 a) is either aimed towards thetarget 109, towards the substrate 102 (e.g., gas stream indicated byarrow 131 b), or towards any region in thechamber 105 between thetarget 109 and the substrate 102 (e.g., gas stream indicated byarrow 131 c). The gas may be provided in a continuous manner or in discrete pulses. While thegas injector 112 is shown at an elevation between themagnets 107 and themiddle coil 106 b, thegas injector 112 may also be disposed between theupper coil 106 a and the magnets 107 (FIG. 3 ), or between themiddle coil 106 b and thelower coil 106 c. Various embodiments of thegas injector 112 are further discussed below with respect toFIGS. 2, 6A-6B, 7A-7B, and 8A-8B . - A
programmable controller 124 is provided to control various operations of the sputter system 100 and its associated components discussed in this disclosure. Thecontroller 124 may be a part of or coupled to a computer that is integrated with, coupled to the sputter system 100, otherwise networked to the sputter system 100, or a combination thereof. Thecontroller 124 may be defined as electronics having various integrated circuits, logic, memory, and/or software, and can be programmed to execute a chamber operation defined by a recipe. A given recipe may specify various parameters for the operation, such as the power levels, voltages, frequencies of different power supplies (e.g., DC biaspower 113, highRF power source 114,bias power 104,RF power source 111, etc.), the flow rate of gas(es) into thechamber 105, angular motion of thegas injector 112, rotation of the gas injectors 612 (FIGS. 6A-6B to 8A-8B ), and the application of vacuum, etc., in accordance with applications. Various embodiments of this disclosure can be fabricated as computer readable code on a computer readable medium. The computer readable medium can include computer readable tangible medium distributed over a local or network-enabled computer system so that the computer readable code is stored and executed by thecontroller 124 in a distributed fashion. - In operation, a gas, such as argon (Ar) or the like, is provided to the
gas injector 112 of thechamber 105 from thegas source 103. The flow rate of the gas is automatically adjusted by theMFC 126 according to a given recipe, real-time information of the gas injection in thechamber 105, and/or process alert received by thecontroller 124. The angular position of thegas injector 112 is also controlled to provide a gas stream into thechamber 105 with the predetermined directionality, e.g., in a direction towards thetarget 109 to improve plasma ignition and reduce arcing. Depending on the type of the sputter system, the gas (e.g., gas atom 145) may be ionized by, for example theRF power sources power 113, and the ionized gas species (e.g., ionized gas species 147) are directed to thetarget 109 by the DC voltage applied to thetarget 109. The ionized gas species bombard thetarget 109 to eject metal atoms (e.g., metal atoms 149) from thetarget 109. The rotation of the magnetic field near thetarget 109 increases the density of ionizedgas species 147 proximate thetarget 109 and therefore the efficiency of the bombardment. The metal atoms having a neutral charge fall towards thesubstrate 102 and deposit a layer on the surface of thesubstrate 102. -
FIG. 2 is a schematic view illustrating the injection of a gas into thechamber 105 in accordance with some embodiments. A gas (represented by a dotted line 201) is provided from thegas source 103 to a mass flow controller (MFC) 226 and then to agas injector 212. Piping may be omitted for clarification. TheMFC 226 and thegas injector 212 and may be used to replace theMFC 126 and thegas injector 112 shown inFIG. 1 . TheMFC 226 may include aninlet 214, anoutlet 222, amass flow sensor 202, anelectronic controller 210, abypass channel 216, and anoutlet control valve 220. In operation, thegas 201 entering from theinlet 214 proceeds through thebypass channel 216. A small amount of thegas 201 is diverted through themass flow sensor 202 and re-enters thebypass channel 216. Themass flow sensor 202 measures the mass flow rate of thegas 201 to obtain a measured flow signal. Theelectronic controller 210 compares the measured flow signal and the external flow rate setting signal and provides a difference signal to theoutlet control valve 220. Theoutlet control valve 220 is operated to modify the flow rate so that the difference between the measured flow signal and the external flow rate setting signal is zero, thereby providing a controlled mass flow of the gas to theoutlet 222. - The controlled mass flow of the
gas 201 existing theoutlet 222 is introduced into thechamber 105 via thegas injector 212. Thegas injector 212 may be made of metal such as aluminum or stainless steel, or dielectric material such as quartz, alumina, silicon nitride, silicon carbide, etc. Thegas injector 212 is fluidly connected with theMFC 226. In some embodiments, thegas injector 212 may have a gas delivery member 223, arotary member 225, and agas outlet 224. The angle of thegas injector 212 can be actively controlled before or during the process so that the gas stream is provided at an angle of about +90 degrees with respect to a longitudinal center axis of the gas delivery member 223. The gas delivery member 223 may have a body extending through thesidewall 151 of the sputter system 100. The longitudinal center axis is parallel to an imaginaryhorizontal line 230, which is parallel to the top surface of a pedestal (not shown), such as thepedestal 101 shown inFIG. 1 . In some embodiments, thegas injector 212 is configured to be pivoted around its two axes. That is, thegas injector 212 can provide angular movement along two axes (e.g., vertical and horizontal movement) with respect to the imaginaryhorizontal line 230. The angular motion of thegas injector 212 is achieved by theactuator 128, which may include a motor, rotor, a pivoting member, or any combination thereof. - The gas delivery member 223 is fluidly connected, either directly or indirectly, with the
outlet 222 of theMFC 226. Therotary member 225 is coupled to and in fluid communication with the gas delivery member 223 and thegas outlet 224, respectively. Theactuator 128 controls therotary member 225 to adjust the angle of thegas outlet 224 according to a given recipe and/or real-time information of the gas injection and/or reactions in thechamber 105, which may require greater amount of gas near a target (e.g.,target 109 inFIG. 1 ) for better gas ionization, plasma formation, and/or bombardment efficiency, or greater amount of gas near a substrate (e.g.,substrate 102 inFIG. 1 ) to enhance plasma density adjacent the substrate. Additionally or alternatively, in some embodiments, the angle of thegas injector 212 is adjusted according to a process alert (e.g., increased risk of arcing) sent from a measuring tool to a controller (e.g., controller 124). - In either case, the
gas injector 212 is controlled so that thegas outlet 224 of thegas injector 212 is directed to provide a gas stream (indicated byarrow 231 a) aiming at an upper region of the chamber 105 (e.g., region near a target), a gas stream (indicated byarrow 231 b) aiming at a lower region of the chamber 105 (e.g., region near a pedestal), or a gas stream (indicated byarrow 231 c) aiming at a center region between the upper region of the lower region. In various cases, thegas outlet 224 of thegas injector 212 is controlled so that the directionality of thegas outlet 224 is adjustable and movable within an angular range of about −90 degree to about 90 degrees, either vertically or horizontally, with respect to the imaginaryhorizontal line 230, and such an angular motion can be made by theactuator 128 before, during, and/or after the process. The gas stream can be provided with an adjustable directionality and controlled mass flow to fine tune gas volume (e.g., increase argon concentration in the plasma) in thechamber 105 in response to any observed issues (e.g., arcing) or potential risks associated with the process in a real-time manner. - In some embodiments, the
gas outlet 224 may be directed to provide a first direction of a gas stream during a first period of time and a second direction of the gas stream during a second period of time, wherein the second direction is different from the first direction, and the first period of time may be the same or different from the second period of time. The gas steam may be provided into thechamber 105 in discrete pulses or in a continuous manner. In some embodiments, thegas outlet 224 may be directed to provide a first direction of a gas stream in a continuous manner during a first period of time and a second direction of the gas stream in discrete pulses during a second period of time, or vice versa. In some embodiments, the direction of the gas stream, or the position of thegas outlet 224, may be changed during the deposition of a layer on a substrate, such as the substrate 102 (FIG. 1 ). -
FIG. 3 is a cross-sectional view of a magnetic-controlled reactive sputter system 300 in accordance with some embodiments. The sputter system 300 is substantially identical to the sputter system 100 except that agas injector 312, which can be thegas injector target 109. In one embodiment, thegas injector 312 is disposed at thesidewall 151 between theupper coil 106 a and themagnets 107. Thedistribution plate 121 may be optionally provided within thechamber 105 at any suitable location, such as between theupper coil 106 a and themagnets 107 or between themagnets 107 and themiddle coil 106 b. -
FIG. 4 is a cross-sectional view of a magnetic-controlled reactive sputter system 400 in accordance with some embodiments. The sputter system 400 is substantially identical to the sputter system 100 except that afirst gas injector 412 and asecond gas injector 512 are disposed on opposing sides of thechamber 105. The first andsecond gas injectors gas injector 212 discussed above with respect toFIGS. 1 and 2 . Thefirst gas injector 412 is fluidly connected to thegas source 103 via afirst MFC 426. Likewise, thesecond gas injector 512 is fluidly connected to a gas source 453 via asecond MFC 456. The first andsecond MFCs MFC 226 discussed above inFIG. 2 , and thegas source 403 can include the same or different gas sources from thegas source 103. The angular motion of thefirst gas injector 412 and thesecond gas injector 512 are controlled by theactuator 128, and asecond actuator 458, respectively. Theactuator 128 and thesecond actuator 458 function similarly and can be operated to adjust the directionality of the first andsecond gas injectors second gas injectors second gas injectors pedestal 101. The gas steam may be provided in a continuous manner or in discrete pulses. In some embodiments where the gas steam is provided in discrete pulses, the first andsecond gas injectors second gas injectors - While the first and
second gas injector magnets 107 and themiddle coil 106 b, the first andsecond gas injector upper coil 106 a and themagnets 107, or between themiddle coil 106 b and thelower coil 106 c. -
FIG. 5 a cross-sectional view of a magnetic-controlled reactive sputter system 500 in accordance with some embodiments. The sputter system 500 is substantially identical to the sputter system 400 except that thesecond gas injector 512 is disposed at an elevation different than thefirst gas injector 412. In some embodiments, thesecond gas injector 512 is disposed higher than thefirst gas injector 412. In one aspect, thesecond gas injector 512 is disposed at an elevation between theupper coil 106 a and themagnets 107, while thefirst gas injector 412 is disposed between themagnets 107 and themiddle coil 106 b. The first andsecond gas injector FIG. 4 to provide gas streams to desired regions in thechamber 105. -
FIGS. 6A-6B to 8A-8B are cross-sectional and front views of a portion of a gas injector in accordance with some embodiments. Unlike thegas injectors FIGS. 6A-6B to 8A-8B rotates about a center axis the gas injector. In the embodiment ofFIGS. 6A and 6B , agas injector 612 may include agas delivery member 623 and agas channel 624 extended through the body of thegas delivery member 623. Thegas injector 612 may have a dome profile at one end. In some embodiments, thegas channel 624 has afirst portion 624 a and asecond portion 624 b branching off from an end of thefirst portion 624 a. Thesecond portion 624 b is at an angle (greater than zero) with respect to thefirst portion 624 a. In some embodiments, the angle (e.g., inner angle between the first andsecond portions first portion 624 a is in fluid communication with a gas source, such as thegas source second portion 624 b has a first end fluidly connected to thefirst portion 624 a and a second end, which is anopening 627 at the dome profile of thegas injector 612, leading to a chamber of a sputter system (e.g.,chamber 105 of the sputter system 100). As can be seen inFIG. 6B , theopening 627 may be at a location away from alongitudinal center axis 625 of thegas injector 612. For example, theopening 627 may be at a periphery of thegas delivery member 623. - The
gas delivery member 623 is rotatable about thelongitudinal center axis 625 of thegas injector 612. The rotation of thegas delivery member 623 may be achieved by an actuator, which may be a part of thegas injector 612 or in electrical communication with thegas injector 612. The actuator may be a rotational actuator including a motor, rotor, or the like, or any combination thereof. Since theopening 627 is at the periphery of thegas delivery member 623, rotation of thegas delivery member 623 allows thegas channel 624 to provide a gas steam (indicated by an arrow 639) aiming at different regions in thechamber 105. For example, thegas delivery member 623 may be rotated to a first position, for a first period of time, where theopening 627 of thegas channel 624 is pointing to a region near a target (e.g.,target 109 inFIG. 1 ) for better gas ionization, plasma formation, and/or bombardment efficiency. Thegas delivery member 623 may be rotated to a second position, for a second period of time, where theopening 627 is pointing to a region near a substrate (e.g.,substrate 102 inFIG. 1 ) to enhance plasma density adjacent the substrate. The first period of time may be the same or different from the second period of time. In some embodiments, the gas stream may be provided in a continuous manner during the first period of time and in discrete pulses during the second period of time, or vice versa. The actuator may rotate thegas delivery member 623 at about 10 revolutions-per-minute (RPM) to about 200 RPM, depending on the application. - The
gas delivery member 623 can be rotated 360° about thelongitudinal center axis 625, allowing a full coverage of gas distribution in the chamber. The rotation of thegas delivery member 623 can be adjusted according to a given recipe, a real-time information of the gas injection and/or reactions in the chamber, and/or a process alert (e.g., increased risk of arcing) received by a controller (e.g., controller 124). - In the embodiment of
FIGS. 7A and 7B , thegas injector 612 is substantially identical to thegas injector 612 ofFIGS. 6A and 6B except that agas channel 724 has afirst portion 724 a extending through the body of thegas delivery member 623 and asecond portion 724 b branching off from thefirst portion 724 a. In some embodiments, thefirst portion 724 a may have a first diameter and thesecond portion 724 b may have a second diameter smaller than the first diameter, or vice versa. Thesecond portion 724 b is at an angle (greater than zero) with respect to thefirst portion 724 a. Thefirst portion 724 a is co-axial with thelongitudinal center axis 625 and has anopening 727 at the dome profile of thegas injector 612 leading to the chamber. Thesecond portion 724 b has anopening 729 at a location away from thelongitudinal center axis 625 of thegas injector 612. For example, theopening 729 may be at a periphery of thegas delivery member 623. In this embodiment, the rotation of thegas delivery member 623 allows a first gas stream (indicated by an arrow 739) to be provided to a first zone in the chamber along a first direction, and a second gas stream (indicated by an arrow 741) to be provided to a second zone in the chamber along a second direction that is different from the first direction. - In the embodiment of
FIGS. 8A and 8B , thegas injector 612 is substantially identical to thegas injector 612 ofFIGS. 6A and 6B except that first andsecond gas channels gas delivery member 623. The first andsecond gas channels second gas channels first gas channel 824 is co-axial with thelongitudinal center axis 625 and has anopening 827 at the dome profile of thegas injector 612 leading to the chamber. Thesecond gas channel 826 is at a location away from thelongitudinal center axis 625 of thegas injector 612. For example, thesecond gas channel 826 may be at a periphery of thegas delivery member 623. Thesecond gas channel 826 extends through the body of thegas delivery member 623 and has afirst portion 826 a and asecond portion 826 b branching off from an end of thefirst portion 826 a. Thesecond portion 826 b has anopening 829 at the dome profile of thegas injector 612 leading to the chamber. In some embodiments, thefirst portion 826 a may have a first diameter and thesecond portion 826 b may have a second diameter smaller than the first diameter, or vice versa. Thesecond portion 826 b is at an angle (greater than zero) with respect to thefirst portion 826 a. In some embodiments, the angle (e.g., inner angle between the first andsecond portions second gas channel 826 may be made straight and parallel to thefirst gas channel 824 without thesecond portion 826 b. In this embodiment, the rotation of thegas delivery member 623 allows a first gas stream (indicated by an arrow 839) to be provided to a first zone in the chamber along a first direction, and a second gas stream (indicated by an arrow 841) to be provided to a second zone in the chamber along a second direction that is different from the first direction. Depending on the application, thefirst gas stream 839 and thesecond gas stream 841 may be the same or different gases, and each first andsecond gas stream - Various embodiments of the gas injectors in
FIGS. 6A-6B to 8A-8B can be combined with one or more embodiments discussed above with respect toFIGS. 1 to 5 . -
FIG. 9 is a flowchart of an algorithm for processing a substrate in a semiconductor manufacturing system, such as the sputter system 100 inFIG. 1 , in accordance with some embodiments. While various operations in this flowchart are described sequentially, some or all of the operations may be executed in a different order, be combined or omitted, or be executed in parallel. - At
operation 902, a recipe is received by a controller (e.g.,controller 124 inFIG. 1 ) for processing a substrate in a sputter system (e.g., sputter system 100 inFIG. 1 ). The recipe may specify various operations and process parameters for depositing a layer on a substrate (e.g.,substrate 102 inFIG. 1 ). - At
operation 904, the controller directs a gas, such as argon, from a gas source (e.g.,gas source 103 inFIG. 1 ) to a mass flow controller (e.g.,MFC 126/226 inFIGS. 1 and 2 ) where a controlled mass flow of the gas is provided to a gas injector (e.g.,gas injector 112/212/312/412/512/612 inFIGS. 1-8B ). - At
operation 906, the controller adjusts an angular/rotational position of the gas injector and directs the gas into a chamber (e.g.,chamber 105 inFIG. 1 ) of the sputter system with a predetermined directionality. - At
operation 908, the controller directs RF power applied to a pedestal (e.g.,pedestal 101 inFIG. 1 ) and a magnetron (e.g.,magnetron 110 inFIG. 1 ), or DC power applied to a target (e.g.,target 109 inFIG. 1 ), to ionize the gas and form a plasma. The ionized gas species from the plasma bombard or collide with the target and the material sputtered from the target deposits a layer on the substrate. - At
operation 910, the controller adjusts the angle/rotation of the gas injector according to the given recipe, real-time information of the gas injection and/or reactions in the chamber, and/or process alert received by the controller. The controller may adjust the angle/rotation of the gas injector so that the gas is provided to an upper region of the chamber (e.g., region near the target), a lower region of the chamber (e.g., region near the pedestal), or a center region between the upper region of the lower region, thereby improving plasma ignition, improving bombardment efficiency, reducing arcing, and/or enhancing plasma density adjacent the substrate. The angular and/or rotational adjustment of the gas injector may be made before, during, and/or after the process, and such angular and/or rotational adjustment may be made continuously during the process to fine tune gas volume (e.g., increase argon concentration in the plasma) and directionality in the chamber in response to any observed issues or potential alerts in a real-time manner. - Various embodiments of the present disclosure provide a sputter system with an improved gas injector that is fluidly connected with a mass flow controller. The gas injector is configured to provide at least two axes of movement (e.g., vertical and horizontal movement), allowing the gas to be provided to a chamber of the sputter system with controlled mass flow and adjustable directionality to fine tune gas volume in the chamber in a real-time manner. The angular and/or rotational adjustment of the gas injector is made during the process for better gas ionization, plasma formation, bombardment efficiency, arcing prevention, and/or enhanced plasma density adjacent the substrate. As a result, the deposition process is improved with less defects.
- Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.
- Another embodiment is a gas injector for use in a physical vapor deposition (PVD) chamber. The gas injector includes a gas delivery member and a gas channel extending through the gas delivery member. The gas channel includes a first portion leading to a first gas outlet of the gas delivery member, and a second portion has a first end fluidly connected to the first portion and a second end leading to a second gas outlet of the gas delivery member, wherein the second portion is branched off from the first portion and disposed at an angle with respect to the first portion, and the gas delivery member is operable to rotate about a longitudinal center axis of the gas delivery member.
- A further embodiment is a method for processing a substrate. The method includes directing a gas from a gas delivery member to a processing chamber in which a substrate is disposed, forming a plasma from the gas, depositing a layer on the substrate by a physical vapor deposition (PVD) process, and adjusting angularity and/or rotation of the gas delivery member so that the gas is provided to different zones of the processing chamber to improve the PVD process based on a real-time information of gas injection and/or reactions in the processing chamber.
- The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (20)
1. A substrate processing system, comprising:
a chamber;
a target disposed within the chamber;
a magnetron disposed proximate the target; and
a first gas injector disposed at a sidewall of the chamber, the first gas injector having a gas outlet, wherein the first gas injector has a gas channel extending through a body of the first gas injector, and the gas channel comprises:
a first portion having a first diameter; and
a second portion disposed at an angle with respect to the first portion, wherein the second portion has a second diameter different than the first diameter and is in fluid communication with the first portion and the gas outlet, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.
2. The system of claim 1 , wherein the second gas outlet is operable to move vertically and horizontally with respect to an imaginary horizontal line parallel to a top surface of the pedestal.
3. The system of claim 2 , wherein the first and second gas outlets are operable to move during a physical vapor deposition (PVD) process.
4. The system of claim 1 , further comprising:
a mass flow controller (MFC) fluidly connected to the first gas injector.
5. The system of claim 4 , wherein the first gas injector is operable to provide a gas flow in a continuous manner or in discrete pulses.
6. The system of claim 4 , further comprising:
a magnet surrounding the sidewall; and
a first coil disposed below the magnet and surrounding the sidewall.
7. The system of claim 6 , further comprising:
a second coil disposed above the magnet and surrounding the sidewall.
8. The system of claim 6 , wherein the first gas injector is disposed between the magnet and the first coil.
9. The system of claim 2 , further comprising:
a second gas injector disposed at the sidewall opposing the first gas injector, wherein the second gas injector has a gas outlet that is operable to move vertically and horizontally.
10. A gas injector for use in a physical vapor deposition (PVD) chamber, comprising:
a gas delivery member; and
a gas channel extending through the gas delivery member, and the gas channel comprises:
a first portion leading to a first gas outlet of the gas delivery member; and
a second portion has a first end fluidly connected to the first portion and a second end leading to a second gas outlet of the gas delivery member.
11. The gas injector of claim 10 , wherein the second portion is branched off from the first portion and disposed at an angle with respect to the first portion, and the gas delivery member is operable to rotate about a longitudinal center axis of the gas delivery member.
12. The gas injector of claim 10 , wherein the first gas outlet is disposed at a center of the gas delivery member and the second gas outlet is disposed at a periphery of the gas delivery member.
13. The gas injector of claim 10 , wherein the gas delivery member is operable to provide a gas flow in a continuous manner or in discrete pulses.
14. The gas injector of claim 10 , wherein the gas delivery member is operable to rotate so that the second gas outlet is moved to a first position for a first period of time and a second position for a second period of time.
15. The gas injector of claim 14 , wherein the first period of time is the same or different than the second period of time.
16. The gas injector of claim 14 , wherein the gas delivery member is fluidly connected to a mass flow controller (MFC).
17. A method for processing a substrate, comprising:
directing a gas from a gas delivery member to a processing chamber in which a substrate is disposed;
forming a plasma from the gas;
depositing a layer on the substrate by a physical vapor deposition (PVD) process; and
rotating the gas delivery member so that the gas is provided to different zones of the processing chamber to improve the PVD process based on a real-time information of gas injection and/or reactions in the processing chamber.
18. The method of claim 17 , further comprising:
flowing the gas from a gas source to the gas delivery member through a mass flow controller (MFC).
19. The method of claim 17 , wherein directing a gas from a gas delivery member to a processing chamber further comprises:
flowing the gas to a first portion of a gas channel in the gas delivery member;
flowing the gas from the first portion of the gas channel to a second portion of the gas channel, wherein the second portion is disposed at an angle with respect to the first portion; and
rotating the gas delivery member.
20. The method of claim 17 , wherein directing a gas from a gas delivery member to a processing chamber further comprises:
flowing the gas to a first gas channel in the gas delivery member, wherein the first gas channel extends through the gas delivery member and has a first gas outlet disposed at a longitudinal center axis of the gas delivery member;
flowing the gas to a second gas channel in the gas delivery member, wherein the second gas channel extends through the gas delivery member and has a second gas outlet disposed at a periphery of the gas delivery member; and
rotating the gas delivery member.
Related Parent Applications (1)
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US18/108,866 Continuation US11885008B2 (en) | 2021-05-26 | 2023-02-13 | Film forming apparatus and method for reducing arcing |
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US20240183025A1 true US20240183025A1 (en) | 2024-06-06 |
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