US20240047852A1 - Semiconductor devices and methods of manufacturing semiconductor devices - Google Patents
Semiconductor devices and methods of manufacturing semiconductor devices Download PDFInfo
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- US20240047852A1 US20240047852A1 US18/239,324 US202318239324A US2024047852A1 US 20240047852 A1 US20240047852 A1 US 20240047852A1 US 202318239324 A US202318239324 A US 202318239324A US 2024047852 A1 US2024047852 A1 US 2024047852A1
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Definitions
- the present disclosure relates, in general, to electronic components, and more particularly, to semiconductor devices and methods for manufacturing semiconductor devices.
- FIG. 1 shows a cross-sectional view of an example semiconductor device.
- FIGS. 2 A to 2 I show cross-sectional views of an example method for manufacturing an example semiconductor device.
- FIG. 3 shows a plan view of an example method for manufacturing an example semiconductor device shown in FIG. 2 C .
- FIGS. 4 A and 4 B show a plan view and a cross-sectional view of example antenna elements and an example layout of antenna elements, which can be applied to an example method for manufacturing an example semiconductor device.
- FIGS. 5 A to 5 C show a plan view and cross-sectional views of example antenna elements and an example layout of antenna elements, which can be applied to an example method for manufacturing an example semiconductor device.
- FIGS. 6 A to 6 F show a plan view and cross-sectional views of example antenna elements and an example layout of antenna elements, which can be applied to an example method for manufacturing an example semiconductor device.
- FIGS. 7 A to 7 D show a plan view and cross-sectional views of an example semiconductor device.
- FIGS. 8 A to 8 F show cross-sectional views of an example method for manufacturing an example semiconductor device.
- FIGS. 9 A to 9 F show cross-sectional views of an example method for manufacturing example semiconductor device shown in FIGS. 8 A to 8 F .
- FIGS. 10 A and 10 B show plan views of an example method for manufacturing example semiconductor device shown in FIGS. 8 A and 8 B .
- FIG. 11 shows a cross-sectional view of an example semiconductor device.
- FIGS. 12 A to 12 F show cross-sectional views of an example method for manufacturing an example semiconductor device.
- FIG. 13 shows a plan view of an example method for manufacturing example semiconductor device shown in FIG. 12 A .
- FIG. 14 shows a cross-sectional view of an example semiconductor device.
- FIGS. 15 A to 15 G show cross-sectional views of an example method for manufacturing an example semiconductor device.
- FIGS. 16 A and 16 B show plan views of an example method for manufacturing example semiconductor device shown in FIGS. 15 A and 15 B .
- x or y means any element of the three-element set ⁇ (x), (y), (x, y) ⁇ .
- x, y, or z means any element of the seven-element set ⁇ (x), (y), (z), (x, y), (x, z), (y, z), (x, y, z) ⁇ .
- first may be used herein to describe various elements, and these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, for example, a first element discussed in this disclosure could be termed a second element without departing from the teachings of the present disclosure.
- Coupled may be used to describe two elements directly contacting each other or describe two elements indirectly connected by one or more other elements.
- element A is coupled to element B, then element A can be directly contacting element B or indirectly connected to element B by an intervening element C.
- the terms “over” or “on” may be used to describe two elements directly contacting each other or describe two elements indirectly connected by one or more other elements.
- a semiconductor device can comprise (a) a substrate comprising a substrate top side, a substrate bottom side a substrate dielectric structure between the substrate top side and the substrate bottom side, and a substrate conductive structure that traverses the substrate dielectric structure and comprises a first substrate terminal, and a second substrate terminal at the substrate top side, (b) an electronic component coupled to the substrate and comprising a component terminal coupled to the first substrate terminal, and (c) a first antenna element coupled to the substrate and comprising a first element dielectric structure, a first antenna pattern coupled to the first element dielectric structure, a first element terminal coupled to the second substrate terminal, a first element head side adjacent first antenna pattern, a first element base side opposite the first element side, and a first element sidewall between the first element head side and the first element base side.
- the first element terminal can be exposed from the first element dielectric structure at at least one of the first element base side or the first element sidewall.
- the first antenna pattern can be coupled to the substrate through the first element terminal.
- the first antenna element can be coupled to the substrate outside a footprint of the electronic component.
- the substrate conductive structure can couple the first antenna element to the electronic component.
- FIG. 1 shows a cross-sectional view of an example semiconductor device 100 .
- semiconductor device 100 can comprise electronic component 110 , antenna elements 130 , encapsulant 140 , substrate 150 , and external interconnects 160 .
- Electronic component 110 can comprise internal interconnects 111 and electromagnetic interference (EMI) shield 112 .
- Antenna elements 130 can comprise dielectric structure 131 , conductive structures 132 and 133 , and antenna patterns 134 .
- Substrate 150 can comprise dielectric structures 151 and 153 and conductive structure 152 .
- Antenna elements 130 , encapsulant 140 , substrate 150 and external interconnects 160 can comprise or be referred to as semiconductor package 101 or package 101 , and can protect electronic component 110 from external elements or environmental exposure.
- Semiconductor package 101 can provide electrical coupling between an external element and electronic component 110 .
- FIGS. 2 A to 2 I show cross-sectional views of an example method for manufacturing example semiconductor device 100 .
- FIG. 3 shows a plan view of an example method for manufacturing example semiconductor device 100 .
- FIG. 2 A shows a cross-sectional view of semiconductor device 100 at an early stage of manufacture.
- bottom surface 110 b of electronic component 110 can be attached to temporary bond layer 11 formed on carrier 10 .
- multiple electronic components 110 can be arranged to be spaced apart from each other in a matrix configuration having rows or columns and can be attached to carrier 10 .
- pick-and-place equipment can pick up and place electronic components 110 on temporary bond layer 11 of carrier 10 and can be adhered to temporary bond layer 11 .
- Electronic component 110 can have a substantially planar top surface (or a non-active region), a substantially bottom surface (or an active region) opposite to top surface, and side surfaces connecting top and bottom surfaces to each other. Bottom surface of electronic component 110 can be adhered to temporary bond layer 11 of carrier 10 .
- Electronic component 110 can comprise at least one internal interconnects 111 on its bottom surface. Internal interconnects 111 can be adhered to temporary bond layer 11 of carrier 10 . Internal interconnects 111 can be external input/output terminals of electronic component 110 and can comprise or be referred to as die pads or bond pads.
- Internal interconnects 111 can have a width in the range from approximately 2 ⁇ m (micrometers) to approximately 500 ⁇ m. Internal interconnects 111 can have a thickness in the range from approximately 3 ⁇ m to approximately 50 ⁇ m. Internal interconnects 111 can comprise an electrically conductive material, such as, for example, a metallic material, aluminum, copper, an aluminum alloy, or a copper alloy.
- Electronic component 110 can comprise or be referred to as a semiconductor die, a semiconductor chip, or a semiconductor package or sub-package.
- electronic component 110 can comprise at least one of an application specific integrated circuit, a logic die, a micro control unit, a memory, a digital signal processor, a network processor, a power management unit, an audio processor, an RF circuit, and a wireless baseband system on chip processor.
- Electronic component 110 can have a thickness in the range from approximately 0.01 mm (millimeter) to approximately 1 mm.
- Carrier 10 can be a substantially planar plate.
- carrier 10 can comprise or be referred to as a board, a wafer, a panel, a semiconductor or a strip.
- carrier 10 can comprise, for example steel, stainless steel, aluminum, copper, ceramic, glass, or a wafer.
- Carrier 10 can have a thickness in the range from approximately 0.5 mm to approximately 1.5 mm and a width in the range from approximately 200 mm to approximately 320 mm.
- Carrier 10 can function to handle multiple elements in an integrated manner for attaching electronic component 110 and antenna elements 130 , forming EMI shield 112 and forming encapsulant 140 .
- Carrier 10 can be commonly applied to some examples of this disclosure.
- Temporary bond layer 11 can be provided on a surface of carrier 10 .
- Temporary bond layer 11 can be provided on surface of carrier 10 using a coating process, such as spin coating, doctor blade, casting, painting, spray coating, slot die coating, curtain coating, slide coating or knife over edge coating; a printing process, such as screen printing, pad printing, gravure printing, flexographic coating or offset printing; an inkjet printing process having intermediate features of coating and printing; or direct attachment of an adhesive film or an adhesive tape.
- Temporary bond layer 11 can comprise or be referred to as a temporary adhesive film or a temporary adhesive tape.
- Temporary bond layer 11 can be, for example, a thermally releasable tape (film) or a UV releasable tape (film), and is weakened or is removed by heat or UV irradiation in its bonding strength. In some examples, temporary bond layer 11 can have a weakened bonding strength or can be removed by physical or chemical external forces. Temporary bond layer 11 can have a thickness in the range from approximately 20 ⁇ m to approximately 500 ⁇ m. Temporary bond layer 11 can allow carrier 10 to be separated after encapsulant 140 to be described later is formed. Temporary bond layer 11 can be commonly applied to some examples of this disclosure.
- FIG. 2 B shows semiconductor device 100 at a later stage of manufacture.
- EMI shield 112 can cover electronic component 110 .
- EMI shield 112 can contact top and side surfaces of electronic component 110 .
- EMI shield 112 can entirely cover top and side surfaces of electronic component 110 to a uniform thickness.
- EMI shield 112 can be made of a conductive material so as to perform a function of shielding EMI induced from antenna elements 130 or externally induced to electronic component 110 .
- EMI shield 112 can comprise silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), palladium (Pd) or chrome (Cr).
- EMI shield 112 can be formed by sputtering, spraying, coating or plating.
- a cap-shaped metal lid can be used as EMI shield 112 .
- EMI shield 112 can have a thickness in the range from approximately 0.1 ⁇ m to approximately 10 ⁇ m.
- FIGS. 2 C and 3 show semiconductor device 100 at a later stage of manufacture.
- bottom surfaces 130 b of antenna elements 130 can be adhered to temporary bond layer 11 provided on carrier 10 .
- pick-and-place equipment can pick up antenna elements 130 to place on a surface of temporary bond layer 11 of carrier 10 and can be adhered.
- antenna elements 130 can be configured such that two antennas are adhered onto carrier 10 so as to be positioned at opposite sides of electronic component 110 .
- Inner surfaces 130 c of antenna elements 130 can be spaced apart from side surfaces 110 c of electronic component 110 having EMI shield 112 .
- inner surfaces 130 c of antenna elements 130 can face side surfaces 110 c of electronic component 110
- outer surfaces 130 d of antenna elements 130 can face outward so as to be opposite to inner surfaces 130 c of antenna elements 130 .
- Antenna elements 130 can extend parallel to side surfaces 110 c of electronic component 110 .
- Antenna elements 130 can comprise a length in the range from approximately 0.01 mm to approximately 20 mm. Antenna elements 130 can comprise a width in the range from approximately 0.01 mm to approximately 20 mm. Each of antenna elements 130 can have a thickness or height in the range from approximately 0.01 mm to approximately 1 mm. In some examples, antenna elements 130 can comprise or be referred to as antenna substrates, antenna modules, or antenna blocks.
- Antenna elements 130 can comprise dielectric structure 131 having substantially planar top and bottom surfaces, conductive structures 132 and 133 exposed to inside and bottom surface of dielectric structure 131 , and antenna patterns 134 exposed to top surface of dielectric structure 131 .
- Conductive structures 132 and 133 can comprise conductive patterns or terminals 132 exposed to bottom surface of dielectric structure 131 , and conductive path 133 formed inside dielectric structure 131 .
- antenna elements 130 can be configured such that one or more of dielectric structure 131 and conductive path 133 are sequentially stacked vertically.
- dielectric structure 131 can have substantially planar top and bottom surfaces.
- dielectric structure 131 can comprise or be referred to as one or more dielectric layers, dielectrics, dielectric materials, insulating layers, or insulating materials.
- dielectric structure 131 can comprise epoxy resin, phenol resin, glass epoxy, polyimide, polyester, epoxy molding compound, glass, or ceramic.
- Dielectric structure 131 can be configured such that one or more dielectric layers are upwardly stacked. Dielectric structure 131 can make antenna elements 130 maintained at a substantially planar state.
- Conductive terminals 132 can be exposed through bottom surface of dielectric structure 131 .
- Conductive terminals 132 can have one or more patterns.
- Conductive terminals 132 can be electrically connected to at least one conductive path 133 .
- Each of conductive terminals 132 can comprise or be referred to as a conductor, a conductive material, an antenna land, a conductive land, an antenna pad, a wiring pad, a connection pad, a micro pad, a trace or an under-bump-metallurgy (UBM).
- conductive terminals 132 can comprise copper, iron, nickel, gold, silver, palladium or tin.
- Conductive path 133 can pass through dielectric structure 131 to then electrically connect conductive terminals 132 with antenna patterns 134 .
- conductive path 133 can comprise or be referred to as a conductor, a conductive material, a conductive via, a conductive path, a conductive trace, a conductive pattern, a conductive layer, a redistribution layer, or a circuit pattern.
- Conductive path 133 can be configured such that one or more conductive layers are upwardly stacked using a variety of patterns.
- conductive path 133 can comprise copper, iron, nickel, gold, silver, palladium or tin.
- Antenna patterns 134 can be exposed through top surface 130 a of dielectric structure 131 so as to enable communication.
- Antenna patterns 134 can have one or more patterns.
- Antenna patterns 134 can be electrically connected to at least one conductive path 132 .
- each of antenna patterns 134 can comprise or be referred to as a dipole antenna, a monopole antenna, a patch antenna, a loop antenna, a beam antenna, a doublet antenna, a folded antenna, a rhombic antenna or a half wave antenna.
- antenna patterns 134 can comprise copper, gold or silver.
- Antenna elements 130 can vertically transmit/receive signals using antenna patterns 134 positioned on upper portions of antenna elements 130 . Such antenna elements 130 can be vertical antennas. Antenna elements 130 can be varied in various manners in view of structure and layout. In the following discussion, example antenna elements and example layout of antenna elements that can be varied in various manners will be described.
- FIGS. 4 A and 4 B show views of example antenna element layout, with cross-sectional view taken along line 4 B- 4 B in FIG. 4 A , that can be applied to an example method for manufacturing an example semiconductor device such as semiconductor device 100 or semiconductor device 1004 .
- antenna elements 230 can be similar to antenna elements 130 , but can be oriented in differently.
- two antenna elements 230 can be coupled with carrier 10 or substrate 150 so as to be positioned at opposite sides of electronic component 110 , like antenna elements 130 shown in FIGS. 2 C and 3 .
- antenna elements 230 can be arranged in similar manner to antenna elements 130 shown in FIG. 2 C .
- antenna elements 230 can be configured such that one or more of each of dielectric structure 231 and conductive structure 232 are sequentially stacked, whether inwards, outwards, or upwards.
- Each of antenna elements 230 can comprise dielectric structure 231 having substantially planar top and bottom surfaces, conductive structure 232 formed inside dielectric structure 231 and exposed to a portion of bottom surface 230 b of dielectric structure 231 , and antenna patterns 234 exposed to outer surface 230 d of dielectric structure 231 .
- dielectric structure 231 can be similar to dielectric structure 131 shown in FIGS. 2 C and 3 .
- Dielectric structure 231 can be configured such that one or more dielectric layers are stacked along y-axis.
- Conductive structure 232 can be formed inside dielectric structure 131 and can be exposed to bottom surface 230 b of dielectric structure 231 . Conductive structure 232 can be electrically connected to antenna patterns 134 and can be exposed to bottom surface 230 b of dielectric structure 231 .
- conductive structure 232 can comprise or be referred to as a conductor, a conductive material, a conductive via, a conductive path, a conductive trace, a conductive pattern, a conductive layer, a redistribution layer (RDL), or a circuit pattern.
- Conductive structure 232 can be configured such that one or more conductive layers are stacked from inner surface 230 c to outer surface 230 d using a variety of patterns.
- conductive path 232 can comprise copper, iron, nickel, gold, silver, palladium or tin.
- Antenna patterns 234 can be exposed through outer surface 230 a of dielectric structure 231 so as to enable communication.
- Antenna patterns 234 can be formed on outer surface 230 a of dielectric structure 231 so as to have one or more patterns.
- Antenna patterns 234 can be electrically connected to at least one conductive structure 232 .
- each of antenna patterns 234 can comprise or be referred to as a dipole antenna, a monopole antenna, a patch antenna, a loop antenna, a beam antenna, a doublet antenna, a folded antenna, a rhombic antenna or a half wave antenna.
- antenna patterns 234 can comprise copper, gold or silver.
- Antenna elements 230 can outwardly transmit/receive signals using antenna patterns 234 positioned on outer surfaces 230 d of antenna elements 230 .
- Such antenna elements 230 can be horizontal antennas.
- FIGS. 5 A, 5 B and 5 C show views of example antenna element layout, with cross-sectional views taken along the lines 5 B- 5 B and 5 C- 5 C in FIG. 5 A , that can be applied to an example method for manufacturing example semiconductor device such as semiconductor device 100 or semiconductor device 1005 .
- four antenna elements 330 can be coupled with carrier 10 or substrate 150 such that two antennas are positioned at opposite sides of electronic component 110 .
- Antenna elements 330 can comprise two vertical antennas 330 x having antenna patterns 334 x similar to antenna elements 130 shown in FIGS. 2 C and 3 , and two horizontal antennas 330 y having antenna patterns 334 y similar to antenna elements 230 shown in FIGS. 4 A and 4 B .
- Vertical antennas 330 x can be similar to antenna elements 130 shown in FIGS. 2 C and 3
- horizontal antennas 330 y can be similar to antenna elements 230 shown in FIGS. 4 A and 4 B
- Antenna elements 330 can vertically transmit/receive signals using vertical antennas 330 x having antenna patterns 334 x positioned on upper portions of antenna elements 330 and can laterally transmit/receive signals using horizontal antennas 330 y having antenna patterns 334 y positioned on outer surfaces of the horizontal antennas 330 y.
- Antenna elements 330 can be configured such that two antennas 330 x and 330 y having different orientations are lengthwise arranged at one side of electronic component 110 , and two antennas 330 x and 330 y having different orientations are lengthwise arranged at the other side of electronic component 110 .
- Each of antennas 330 x and 330 y can extend a length in the range from approximately 0.01 mm to approximately 20 mm. Each of antennas 330 x and 330 y can extend a width in the range from approximately 0.01 mm to approximately 20 mm. Each of antennas 330 x and 330 y can have a thickness or height in the range from approximately 0.01 mm to approximately 1 mm. In some examples, each of antenna elements 330 can comprise or be referred to as an antenna substrate, an antenna module, or an antenna block.
- FIGS. 6 A, 6 B, 6 C and 6 D show views of example antenna element layout, with cross-sectional views taken along lines 6 B- 6 B, 6 C- 6 C, and 6 D- 6 D in FIG. 6 A , that can be applied to an example method for manufacturing example semiconductor device such as semiconductor device 100 or semiconductor device 1006 .
- six antenna elements can be coupled with carrier 10 or substrate 150 such that antenna elements 330 x and 330 y are lengthwise arranged at first opposite sides of electronic component 110 , like in the layout of antenna elements 330 shown in FIGS. 5 A, 5 B and 5 C , and antenna elements 430 z are lengthwise arranged at second opposite sides of electronic component 110 .
- Antenna elements 330 can comprise vertical antenna elements 330 x having antenna patterns 334 at element head side 135 facing one or more vertical directions, and two horizontal antennas 330 y having antenna patterns 334 at element head side 135 facing respective rightward and leftward horizontal directions, similar to antenna elements 330 shown in FIGS. 5 A to 5 C .
- Antenna elements 430 can comprise horizontal antenna elements 430 z having antenna patterns 134 at element head side 135 facing respective upward and downward horizontal directions.
- Vertical antennas 330 x can be configured in similar manner with antenna elements 130 shown in FIGS. 2 C and 3
- horizontal antennas 330 y and 430 z can be configured in similar manner with antenna elements 230 shown in FIGS. 4 A and 4 B .
- the antenna elements of semiconductor device 1006 can vertically transmit/receive signals using vertical antenna elements 330 x , and can horizontally transmit/receive signals using horizontal antenna elements 330 y and 430 z .
- individual antenna elements 330 x , 330 y , 430 z can all be similar to antenna element 130 or similar to each other.
- antenna elements 330 x , 330 y , 430 z can differ from each other mainly by being oriented in different directions when coupled with carrier 10 or substrate 150 .
- antenna elements 130 , 230 , 330 , and 430 shown in FIGS. 2 C, 3 , 4 A, 4 B, 5 A to 5 C and 6 A to 6 D antenna elements can be varied in view of configuration and layout by arranging vertical antennas or horizontal antennas similar to those described in various manners.
- FIG. 2 D shows semiconductor device 100 at a later stage of manufacture.
- encapsulant 140 can cover carrier 10 , electronic component 110 , and antenna elements 130 .
- encapsulant 140 can be brought into contact with top surface of temporary bond layer 11 of carrier 10 , outer surface of EMI shield 112 of electronic component 110 , and side surfaces of antenna elements 130 .
- antenna patterns 134 of antenna elements 130 can be exposed.
- encapsulant 140 can comprise or be referred to as epoxy molding compound, epoxy molding resin or sealant. In some examples, encapsulant 140 can comprise or be referred to as a molding part, a sealing part, an encapsulation part, a protection part, a package or a body. In some examples, encapsulant 140 can comprise, an organic resin, an inorganic filler, a curing agent, a catalyst, a coupling agent, a coloring agent, and a flame retardant. Encapsulant 140 can be formed by any of a variety of processes. In some examples, encapsulant 140 can be formed using, compression molding, transfer molding, liquid-phase encapsulant molding, vacuum lamination, paste printing or film assist molding. Encapsulant 140 can have a thickness in the range from approximately 0.1 mm to approximately 2 mm. Encapsulant 140 can cover electronic component 110 and antenna elements 130 to protect electronic component 110 and antenna elements 130 from external elements or environmental exposure.
- FIG. 2 E shows semiconductor device 100 at a later stage of manufacture.
- semiconductor device 100 can be flipped to remove carrier 10 in a state in which carrier 10 is positioned on electronic component 110 , antenna elements 130 , and encapsulant 140 . If semiconductor device 100 is flipped in such a manner, antenna patterns 134 of antenna elements 130 can be positioned on a bottom surface of semiconductor device 100 .
- Carrier 10 can be removed from top surface 110 b of electronic component 110 , top surfaces 130 b of antenna elements 130 , and top surface 140 b of encapsulant 140 .
- Temporary bond layer 11 can be removed from electronic component 110 , antenna elements 130 , and encapsulant 140 in a state in which temporary bond layer 11 is adhered to carrier 10 .
- heat, light, a chemical solution or physical force can be formed to temporary bond layer 11 , thereby removing or reducing bonding strength of temporary bond layer 11 .
- top surface 110 b of electronic component 110 , top surfaces 130 b of antenna elements 130 , and top surface 140 b of encapsulant 140 can be exposed.
- Internal interconnects 111 of electronic component 110 and conductive terminals 132 of antenna elements 130 can also be exposed.
- FIG. 2 F shows semiconductor device 100 at a later stage of manufacture.
- dielectric structure 151 can be formed on top surface 110 b of electronic component 110 , top surfaces 130 b of antenna elements 130 , and top surface 140 b of encapsulant 140 , and can be patterned, thereby exposing internal interconnects 111 and conductive terminals 132 .
- Dielectric structure 151 can have a uniform thickness so as to cover top surface 110 b of electronic component 110 , top surfaces 130 b of antenna elements 130 , and top surface 140 b of encapsulant 140 .
- Dielectric structure 151 can comprise or be referred to as dielectrics, a dielectric material, a dielectric layer, a passivation layer, an insulating layer, or a protection layer.
- dielectric structure 151 can comprise, an electrically insulating material, such as, for example, a polymer, polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO), bismaleimide triazine (BT), a molding material, a phenolic resin, an epoxy, silicone, or an acrylate polymer.
- dielectric structure 151 can be formed by any of a variety of processes.
- Dielectric structure 151 can be formed by, for example, spin coating, spray coating, printing, PVD, CVD, MOCVD, ALD, LPCVD, or PECVD. Dielectric structure 151 can have a thickness in the range from approximately 5 ⁇ m to approximately 50 ⁇ m.
- a mask pattern can be formed on top surface of dielectric structure 151 and exposed dielectric structure 151 can be removed by etching, thereby forming apertures 151 x and 151 y .
- Apertures 151 x and 151 y can comprise or be referred to as openings or holes.
- Dielectric structure 151 can expose top surfaces of internal interconnects 111 of electronic component 110 through apertures 151 x , and top surfaces of conductive terminals 132 of antenna elements 130 through apertures 151 y .
- photoresist can be used as the mask pattern.
- FIG. 2 G shows semiconductor device 100 at a later stage of manufacture.
- conductive structure 152 can cover top surface of dielectric structure 151 , and internal interconnects 111 of electronic component 110 and conductive terminals 132 of antenna elements 130 , exposed through apertures 151 x and 151 y.
- Conductive structure 152 can have multiple patterns, and are brought into contact with internal interconnects 111 of electronic component 110 and conductive terminals 132 of antenna elements 130 , exposed through apertures 151 x and 151 y , respectively, and can be electrically connected.
- Conductive structure 152 can comprise conductors 152 x electrically connecting internal interconnects 111 of electronic component 110 and conductive terminals 132 of antenna elements 130 with each other.
- Conductors 152 x can extend from a point over electronic component 110 to a point over each of antenna elements 130 to electrically connect electronic component 110 and antenna elements 130 .
- conductive structure 152 can comprise or be referred to as conductors, a conductive material, a conductive layer, a redistribution layer (RDL), a wiring pattern, a trace pattern, or a circuit pattern.
- conductive terminals 132 can comprise copper, iron, nickel, gold, silver, palladium or tin.
- one or more conductors 152 x can comprise or be referred to as traces, terminals, pads, vias, conductive patterns, conductive layers, or conductive paths, and can extend both within and beyond the footprint of electronic component 110 .
- conductive structure 152 can be formed using, for example, any of a variety of conductive materials (e.g., copper, gold, silver, or equivalents).
- Conductive structure 152 can be formed by any of a variety of processes (e.g., sputtering, electroless plating, electroplating, PVD, CVD, MOCVD, ALD, LPCVD, PECVD, or equivalents).
- Conductive structure 152 can be formed to have a uniform thickness so as to cover top surface of dielectric structure 151 , internal interconnects 111 of electronic component 110 and conductive terminals 132 of antenna elements 130 , exposed through apertures 151 x and 151 y , and can have multiple patterns by patterning the same using a mask pattern.
- Conductive structure 152 can have a thickness in the range from approximately 3 ⁇ m to approximately 50 ⁇ m.
- FIG. 2 H shows semiconductor device 100 at a later stage of manufacture.
- dielectric structure 153 can cover dielectric structure 151 and conductive structure 152 to a uniform thickness. Apertures 153 x exposing top surface 152 b of conductive structure 152 can be formed in dielectric structure 153 . Dielectric structure 153 can also expose top surfaces of conductors 152 x through apertures 153 x . Dielectric structure 153 can be similar to, and can be similarly formed as, dielectric structure 151 .
- substrate 150 Although only two dielectric structures 151 and 153 and one conductive structure 152 are shown in substrate 150 , this is not a limitation of the present disclosure. In some examples, the number of structures that make up substrate 150 can be smaller or greater than that shown in the present disclosure.
- Substrate 150 is presented as a redistribution layer (“RDL”) substrate in the present example.
- RDL substrates can comprise one or more conductive redistribution layers and one or more dielectric layers that (a) can be formed layer by layer over an electronic component to which the RDL substrate is to be electrically coupled, or (b) can be formed layer by layer over a carrier that can be entirely removed or at least partially removed after the electronic component and the RDL substrate are coupled together.
- RDL substrates can be manufactured layer by layer as a wafer-level substrate on a round wafer in a wafer-level process, or as a panel-level substrate on a rectangular or square panel carrier in a panel-level process.
- RDL substrates can be formed in an additive buildup process that can include one or more dielectric layers alternatingly stacked with one or more conductive layers that define respective conductive redistribution patterns or traces configured to collectively (a) fan-out electrical traces outside the footprint of the electronic component, or (b) fan-in electrical traces within the footprint of the electronic component.
- the conductive patterns can be formed using a plating process such as, for example, an electroplating process or an electroless plating process.
- the conductive patterns can comprise an electrically conductive material such as, for example, copper or other plateable metal.
- the locations of the conductive patterns can be made using a photo-patterning process such as, for example, a photolithography process and a photoresist material to form a photolithographic mask.
- the dielectric layers of the RDL substrate can be patterned with a photo-patterning process, which can include a photolithographic mask through which light is exposed to photo-pattern desired features such as vias in the dielectric layers.
- the dielectric layers can be made from photo-definable organic dielectric materials such as, for example, polyimide (PI), benzocyclobutene (BCB), or polybenzoxazole (PBO). Such dielectric materials can be spun-on or otherwise coated in liquid form, rather than attached as a pre-formed film.
- such photo-definable dielectric materials can omit structural reinforcers or can be filler-free, without strands, weaves, or other particles, that could interfere with the light from the photo-patterning process.
- such filler-free characteristics of filler-free dielectric materials can permit a reduction of the thickness of the resulting dielectric layer.
- the photo-definable dielectric materials described above can be organic materials, in some examples the dielectric materials of the RDL substrates can comprise one or more inorganic dielectric layers. Some examples of inorganic dielectric layer(s) can comprise silicon nitride (Si3N4), silicon oxide (SiO2), or SiON.
- the inorganic dielectric layer(s) can be formed by growing the inorganic dielectric layers using an oxidation or nitridization process instead using photo-defined organic dielectric materials. Such inorganic dielectric layers can be filler-fee, without strands, weaves, or other dissimilar inorganic particles.
- the RDL substrates can omit a permanent core structure or carrier such as, for example, a dielectric material comprising bismaleimide triazine (BT) or FR4 and these types of RDL substrates can comprise or be referred to as a coreless substrate.
- Other substrates in this disclosure can also comprise an RDL substrate.
- substrate 150 can be a pre-formed substrate.
- the pre-formed substrate can be manufactured prior to attachment to an electronic component and can comprise dielectric layers between respective conductive layers.
- the conductive layers can comprise copper and can be formed using an electroplating process.
- the dielectric layers can be relatively thicker non-photo-definable layers that can be attached as a pre-formed film rather than as a liquid and can include a resin with fillers such as strands, weaves, or other inorganic particles for rigidity or structural support. Since the dielectric layers are non-photo-definable, features such as vias or openings can be formed by using a drill or laser.
- the dielectric layers can comprise a prepreg material or Ajinomoto Buildup Film (ABF).
- the pre-formed substrate can include a permanent core structure or carrier such as, for example, a dielectric material comprising bismaleimide triazine (BT) or FR4, and dielectric and conductive layers can be formed on the permanent core structure.
- the pre-formed substrate can be a coreless substrate which omits the permanent core structure, and the dielectric and conductive layers can be formed on a sacrificial carrier that is removed after formation of the dielectric and conductive layers and before attachment to the electronic component.
- the pre-formed substrate can rereferred to as a printed circuit board (PCB) or a laminate substrate.
- PCB printed circuit board
- Such pre-formed substrate can be formed through a semi-additive or modified-semi-additive process.
- Other substrates in this disclosure can also comprise a pre-formed substrate.
- FIG. 2 I shows semiconductor device 100 at a later stage of manufacture.
- external interconnects 160 can be formed on top surface 152 b of conductive structure 152 .
- External interconnects 160 can be electrically connected to top surface 152 b of conductive structure 152 . External interconnects 160 can be electrically connected to electronic component 110 or to antenna elements 130 through substrate 150 . External interconnects 160 can be electrically connected to both of electronic component 110 and antenna elements 130 through conductors 152 x of substrate 150 .
- external interconnects 160 can comprise tin (Sn), silver (Ag), lead (Pb), copper (Cu), Sn—Pb, Sn37-Pb, Sn95-Pb, Sn—Pb—Ag, Sn—Cu, Sn—Ag, Sn—Au, Sn—Bi, or Sn—Ag—Cu.
- External interconnects 160 can be formed using, for example, a ball drop process, a screen printing process or an electroplating process.
- external interconnects 160 can be formed by preparing a conductive material containing a solder on top surface 152 b of conductive structure 152 of substrate 150 using a ball drop process, followed by a reflow process.
- External interconnects 160 can comprise or be referred to as conductive balls, such as solder balls, conductive pillars, such as copper pillars, or conductive posts having solder caps on copper pillars. External interconnects 160 can have a size in the range from approximately 0.01 mm to approximately 1 mm. Completed semiconductor device 100 can be flipped, so that external interconnects 160 are positioned on bottom surface 100 y of semiconductor device 100 .
- FIG. 6 A shows a top view of semiconductor device 1006 .
- FIGS. 6 B- 6 F show side cross-sectional views of semiconductor device 1006 along different antenna elements 330 x , 330 y , 430 z.
- FIG. 6 A shows several antenna elements are shown coupled with substrate 150 at substrate portions defined around footprint 119 of electronic component 110 or around a center of the antenna elements arrangement, such substrate portions shown divided by dotted lines.
- Antenna element 330 x 1 is shown coupled to substrate leftward portion 156
- antenna element 330 x 2 is shown coupled to substrate rightward portion 157
- antenna element 330 y 1 is shown coupled to substrate rightward portion 157
- antenna element 330 y 2 is shown coupled to substrate leftward portion 156
- antenna element 430 z 1 is shown coupled to substrate upward portion 158
- antenna element 430 z 2 is shown coupled to substrate downward portion 159 .
- Substrate 150 comprises a substrate dielectric structure having one or more dielectric layers, such as dielectric layers 151 , 153 , between substrate top side 154 and substrate bottom side 155 .
- Substrate 150 also comprises substrate conductive structure 152 comprising one or more conductors, conductive layers, pads, vias, or traces, that traverse the substrate dielectric structure horizontally or vertically.
- Substrate conductive structure 152 can comprise substrate terminal 1521 , and can comprise substrate terminal 1522 exposed at substrate top side 154 .
- substrate terminals 1521 , 1522 can comprise or be referred to as pads, vias, or traces.
- Electronic component 110 can be coupled to substrate 150 and can comprise component terminal 115 coupled to substrate terminal 1521 .
- component terminals 115 can comprise or be referred to as pads, bumps, or pillars.
- component side 117 of electronic component 110 can directly contact substrate top side 154 .
- component side 117 of electronic component 110 can be distanced from substrate top side by a gap defined by height of component terminal 115 .
- footprint 119 shown in FIG. 6 A can represent the area of substrate 150 covered by electronic component 110 , whether electronic component 110 is coupled to substrate top side 154 as shown and described for example with respect to FIGS. 1 - 2 , or whether electronic component 110 is coupled to substrate bottom side 155 as shown and described for example further below with respect to corresponding elements in FIGS. 11 - 16 .
- Semiconductor device 1006 can comprise one or more passive components coupled to substrate 150 .
- the passive components can be similar in terms of features or location to the passive components 520 or 720 described further below with respect to FIGS. 7 - 10 or FIGS. 14 - 16 .
- one or more of the passive components can be coupled to substrate 150 at least partially within footprint 119 of electronic component 110 , whether such passive component is on substrate bottom side 155 and electronic component 110 is on substrate top side 154 , or whether such passive component is on substrate top side 154 and electronic component 110 is on substrate bottom side 155 .
- one or more of the passive components can be coupled to substrate upward portion 158 , whether at substrate top side 154 or substrate bottom side 155 , between antenna element 330 x 1 and antenna element 330 y 1 , adjacent to antenna element 430 z 1 , or adjacent electronic component 110 .
- one or more of the passive components can be coupled to substrate downward portion 159 , whether at substrate top side 154 or substrate bottom side 155 , between antenna element 330 y 2 and antenna element 330 x 2 , adjacent to antenna element 430 z 2 , or adjacent electronic component 110 .
- one or more of the passive components can be coupled to substrate leftward portion 156 , whether at substrate top side 154 or substrate bottom side 155 , between antenna element 430 z 1 and antenna element 430 z 2 , adjacent to antenna element 330 x 1 or antenna element 330 y 2 , or adjacent electronic component 110 .
- one or more of the passive components can be coupled to substrate rightward portion 157 , whether at substrate top side 154 or substrate bottom side 155 , between antenna element 430 z 1 and antenna element 430 z 2 , adjacent to antenna element 330 y 1 or antenna element 330 x 2 , or adjacent electronic component 110 .
- Antenna elements 330 x , 330 y , 430 z can comprise outward vertical surfaces facing horizontally outward of semiconductor device 1006 , and inward vertical surfaces opposite the outward vertical surfaces. Depending on the antenna element, such outward vertical surfaces can correspond to element head side 135 or element sidewall 136 , and such inward vertical surfaces can correspond to element base side 137 or element sidewall 136 .
- Semiconductor device 1006 can comprise encapsulant 140 on substrate top side 154 . In some examples, encapsulant 140 can cover the inward vertical surfaces of antenna elements 330 x , 330 y , or 430 z .
- encapsulant 140 can cover the outward vertical surfaces of antenna elements 330 x , 330 y , or 430 z . In some examples, encapsulant 140 leave the outward vertical surfaces of antenna elements 330 x , 330 y , or 430 z exposed. Encapsulant 140 can also cover component sidewall 116 or component side 115 of electronic component 110 . In some examples, shield structure 112 can cover component sidewall 116 and component side 115 , and encapsulant 140 can in turn cover shield structure 112 adjacent component sidewall 116 or adjacent component side 115 . In some examples, encapsulant 140 can leave exposed shield structure 112 adjacent component side 115 .
- FIG. 6 B corresponds to line 6 B- 6 B of FIG. 6 A and shows antenna element 330 x 1 and antenna element 330 x 2 coupled to substrate 150 outside component footprint 119 of electronic component 110 .
- Antenna element 330 x 1 or antenna element 330 x 2 can be similar to antenna element 130 previously described.
- Antenna element 330 x 1 can be similar to antenna element 330 x 2 , but can be coupled opposite each other.
- the arrangement, orientation, or features of antenna elements 330 y 1 and 330 y 2 can be similar to that described above with respect to antenna elements 130 in FIGS. 1 - 3 .
- antenna element 330 x 2 comprises element dielectric structure 131 comprising one or more dielectric layers, antenna pattern 134 coupled to element dielectric structure 131 , and element terminal 132 coupled to substrate terminal 1522 .
- Element terminal 132 can be part of conductive structure 133 , which provides a conductive path or antenna path comprising one or more traces or vias that traverse element dielectric structure 131 for coupling antenna pattern 134 to element terminal 132 .
- Antenna element 330 x 1 also comprises element head side 135 adjacent antenna pattern 134 , element base side 137 opposite element head side 135 , and element sidewall 136 between element head side 135 and element base side 137 .
- antenna pattern 134 can be exposed at or through element head side 134 for outbound or inbound wireless communications.
- element terminal 132 is exposed at element base side 137
- antenna pattern 134 is coupled to substrate 150 through element terminal 132 and substrate terminal 1522 .
- Substrate conductive structure 152 couples antenna element 330 x 2 to electronic component 110 , providing a conductive path between element terminal 132 and component terminal 115 .
- Antenna pattern 134 can be configured or oriented to send or receive wireless communications along a direction substantially orthogonal to antenna head side 135 or antenna pattern 134 .
- element head side 135 faces topward vertical direction, with antenna pattern 134 oriented for communication along such vertical direction, and with element base side 137 coupled to substrate 150 .
- antenna element 330 x 1 comprises element head side 135 facing topward vertical direction, with antenna pattern 134 oriented for communication along such vertical direction and with element base side 137 coupled to substrate 150 .
- encapsulant 140 can cover element head side 135 or antenna pattern 134 .
- encapsulant 140 can be applied, or antenna element 330 x 1 or antenna element 330 x 2 can be positioned, such that element head side 135 or antenna pattern 134 remain exposed from encapsulant 140 .
- antenna element 330 x 1 or antenna element 330 x 2 can be oriented such that antenna head side 135 faces a horizontal direction, for communication along such horizontal direction.
- element sidewall 136 can be coupled to substrate 150 , or element terminal 132 can be exposed at element sidewall 137 and coupled to substrate terminal 1522 .
- one of antenna element 330 x 1 or antenna element 330 x 2 can be oriented for topward vertical communication as described above, and where another one of antenna element 330 x 1 or antenna element 330 x 2 can be oriented such that antenna head side 135 faces a bottomward vertical direction for communication along such vertical direction.
- FIG. 6 C corresponds to line 6 C- 6 C of FIG. 6 A and shows antenna element 330 y 1 and antenna element 330 y 2 coupled to substrate 150 outside component footprint 119 of electronic component 110 .
- Antenna element 330 y 1 or antenna element 330 y 2 can be similar to antenna element 130 previously described.
- Antenna element 330 y 1 can be similar to antenna element 330 y 2 , but can be coupled opposite each other.
- the arrangement, orientation, or features of antenna elements 330 y 1 and 330 y 2 can be similar to that described above with respect to antenna elements 230 in FIG. 4 .
- antenna element 330 y 1 comprises element head side 135 facing rightward horizontal direction, with antenna pattern 134 oriented for communication along such rightward horizontal direction, and with element sidewall 136 coupled to substrate 150 .
- Antenna element 330 y 2 comprises element head side 135 facing leftward horizontal direction, with antenna pattern 134 oriented for communication along such leftward horizontal direction, and with element sidewall 136 coupled to substrate 150 .
- encapsulant 140 can cover element head side 135 or antenna pattern 134 .
- encapsulant 140 can cover element head side 135 or antenna pattern 134 .
- encapsulant 140 can be applied, or antenna element 330 y 1 or antenna element 330 y 2 can be positioned, such that element head side 135 or antenna pattern 134 remain exposed from encapsulant 140 .
- FIG. 6 D corresponds to line 6 D- 6 D of FIG. 6 A and shows antenna element 330 x 1 and antenna element 330 y 1 coupled to substrate 150 outside component footprint 119 of electronic component 110 .
- Antenna element 330 x 1 or antenna element 330 y 1 can be similar to antenna element 130 previously described.
- Antenna element 330 x 1 can be similar to antenna element 330 y 1 , but can be coupled opposite each other or in a different orientation.
- antenna element 330 x 1 comprises element head side 135 facing topward vertical direction, with antenna pattern 134 oriented for communication along such topward vertical direction, and with element base side 137 coupled to substrate 150 .
- Antenna element 330 y 1 comprises element head side 135 facing rightward horizontal direction, with antenna pattern 134 oriented for communication along such rightward horizontal direction, and with element sidewall 136 coupled to substrate 150 .
- encapsulant 140 can cover element head side 135 or antenna pattern 134 .
- encapsulant 140 can be applied, or antenna element 330 x 1 or antenna element 330 y 1 can be positioned, such that element head side 135 or antenna pattern 134 remain exposed from encapsulant 140 .
- FIG. 6 E corresponds to line 6 E- 6 E of FIG. 6 A and shows antenna element 330 y 2 and antenna element 330 x 2 coupled to substrate 150 outside component footprint 119 of electronic component 110 .
- Antenna element 330 y 2 or antenna element 330 x 2 can be similar to antenna element 130 previously described.
- Antenna element 330 x 2 can be similar to antenna element 330 y 2 , but can be coupled opposite each other or in a different orientation.
- antenna element 330 y 2 comprises element head side 135 facing leftward horizontal direction, with antenna pattern 134 oriented for communication along such leftward horizontal direction, and with element sidewall 136 coupled to substrate 150 .
- Antenna element 330 x 2 comprises element head side 135 facing topward vertical direction, with antenna pattern 134 oriented for communication along such topward vertical direction, and with element base side 137 coupled to substrate 150 .
- encapsulant 140 can cover element head side 135 or antenna pattern 134 .
- encapsulant 140 can be applied, or antenna element 330 y 2 or antenna element 330 x 2 can be positioned, such that element head side 135 or antenna pattern 134 remain exposed from encapsulant 140 .
- FIG. 6 F corresponds to line 6 F- 6 F of FIG. 6 A and shows antenna element 430 z 1 and antenna element 430 z 2 coupled to substrate 150 outside component footprint 119 of electronic component 110 .
- Antenna element 430 z 1 or antenna element 430 z 2 can be similar to antenna element 130 previously described.
- Antenna element 430 z 1 can be similar to antenna element 430 z 2 , but can be coupled opposite each other or in a different orientation.
- antenna element 430 z 1 comprises element head side 135 facing upward horizontal direction, with antenna pattern 134 oriented for communication along such upward horizontal direction, and with element sidewall 136 coupled to substrate 150 .
- Antenna element 430 z 2 comprises element head side 135 facing downward vertical direction, with antenna pattern 134 oriented for communication along such downward vertical direction, and with element base side 137 coupled to substrate 150 .
- encapsulant 140 can cover element head side 135 or antenna pattern 134 .
- encapsulant 140 can be applied, or antenna element 430 z 1 or antenna element 430 z 2 can be positioned, such that element head side 135 or antenna pattern 134 remain exposed from encapsulant 140 .
- FIGS. 7 A to 7 D show a transmission plan view of an example semiconductor device, a cross-sectional view taken along the line 7 B- 7 B of FIG. 7 A , a cross-sectional view taken along the line 7 C- 7 C of FIG. 7 A , and a cross-sectional view taken along the line 7 D- 7 D of FIG. 7 A .
- semiconductor device 500 can comprise electronic component 110 , passive component 520 , antenna elements 130 , encapsulant 540 , substrate 550 , and external interconnects 160 .
- Electronic component 110 , antenna elements 130 and external interconnects 160 can be similar to elements of semiconductor device 100 shown in FIG. 1 .
- Passive component 520 can comprise terminals 521 .
- Substrate 550 can comprise dielectric structures 551 and 553 , and conductive structure 552 .
- Antenna elements 130 , encapsulant 540 , substrate 550 and external interconnects 160 can comprise or be referred to as semiconductor package 501 or package 501 , and can protect electronic component 110 and passive component 520 from external elements or environmental exposure.
- Semiconductor package 501 can provide electrical coupling between an external element and electronic component 110 and between the external element and passive component 520 .
- FIGS. 8 A to 8 F show cross-sectional views of an example method for manufacturing an example semiconductor device 500 .
- FIGS. 9 A to 9 F show cross-sectional views of an example method for manufacturing example semiconductor device 500 shown in FIGS. 8 A to 8 F .
- FIGS. 10 A and 10 B show plan views of an example method for manufacturing example semiconductor device 500 shown in FIGS. 8 A and 8 B .
- FIGS. 8 A to 8 F show cross-sectional views taken along the line 7 C- 7 C of FIG. 7 A
- FIGS. 9 A to 9 F show cross-sectional views taken along the line 7 D- 7 D of FIG. 7 A .
- cross-sectional views taken along the line 7 B- 7 B of FIG. 7 A can be the similar as those shown in FIGS. 2 C to 2 J .
- FIGS. 8 A, 9 A and 10 A show semiconductor device 500 at an early stage of manufacture.
- semiconductor device 500 can be prepared.
- Semiconductor device 500 shown in FIGS. 8 A, 9 A and 10 A can be similar to semiconductor device 100 manufactured by example method for manufacturing semiconductor device 100 shown in FIGS. 2 A to 2 C and FIG. 3 .
- FIGS. 8 B, 9 B and 10 B show semiconductor device 500 at a later stage of manufacture.
- bottom surface 520 b of passive component 520 can be adhered to a surface of temporary bond layer 11 of carrier 10 .
- Passive component 520 can be adhered to carrier 10 so as to be positioned at opposite sides of electronic component 110 along first direction x.
- Passive component 520 can be arranged on and adhered onto temporary bond layer 11 of carrier 10 in a matrix configuration having rows or columns so as to be positioned between antenna elements 130 spaced apart from each other in second direction y. Terminals 521 of passive component 520 can be adhered to temporary bond layer 11 .
- pick-and-place equipment can pick up and place passive component 520 on temporary bond layer 11 of carrier 10 and can be adhered to temporary bond layer 11 .
- Bottom surface of passive component 520 can be adhered to temporary bond layer 11 .
- Passive component 520 can comprise terminals 521 exposed to its bottom surface. Terminals 521 can be adhered to temporary bond layer 11 of carrier 10 . Terminals 521 can be input/output terminals of passive component 520 .
- passive component 520 can comprise at least one of a resistor, a capacitor, an inductor, a connector, and equivalents. Passive component 520 can have an overall thickness in the range from approximately 0.01 mm to approximately 2 mm.
- Antenna elements 130 can be varied by employing the layouts of antenna elements 130 , 230 , 330 , and 430 shown in FIGS. 2 C, 3 , 4 A, 4 B, 5 A to 5 C, and 6 A to 6 D .
- antenna elements 130 can be varied by arbitrarily arranging vertical antennas or horizontal antennas in various manners.
- passive component 520 can be varied in view of layout so as to be arranged within surface of temporary bond layer 11 of carrier 10 in various manners by employing the layouts of antenna elements 130 , 230 , 330 , and 430 .
- FIGS. 8 C and 9 C show semiconductor device 500 at a later stage of manufacture.
- encapsulant 540 can cover carrier 10 , electronic component 110 , passive component 520 and antenna elements 130 .
- encapsulant 540 can be brought into contact with top surface of temporary bond layer 11 of carrier 10 , outer surface of EMI shield 112 , top and side surfaces of passive component 520 , and side surfaces of antenna elements 130 .
- antenna patterns 134 of antenna elements 130 can be exposed.
- Encapsulant 540 can be similar to, and can be similarly formed as encapsulant 140 .
- FIGS. 8 D and 9 D show semiconductor device 500 at a later stage of manufacture.
- semiconductor device 500 can be flipped to remove carrier 10 in a state in which carrier 10 is positioned on electronic component 110 , passive component 520 , antenna elements 130 , and encapsulant 540 .
- Carrier 10 can be removed from top surface 110 b of electronic component 110 , top surface 520 b of passive component 520 , top surfaces 130 b of antenna elements 130 , and top surface 540 b of encapsulant 540 . Accordingly, top surface 110 b of electronic component 110 , top surface 520 b of passive component 520 , top surfaces 130 b of antenna elements 130 , and top surface 540 b of encapsulant 540 , can be exposed. Internal interconnects 111 of electronic component 110 , terminals 521 of passive component 520 , and conductive terminals 132 of antenna elements 130 , can also be exposed. Removing of carrier 10 can be similar to removing of carrier 10 shown in FIG. 2 E .
- FIGS. 8 E and 9 E show semiconductor device 500 at a later stage of manufacture.
- substrate 550 can be formed on top surface 110 b of electronic component 110 , top surface 520 b of passive component 520 , top surfaces 130 b of antenna elements 130 , and top surface 540 b of encapsulant 540 .
- substrate 550 can be similar to substrate 150 , or can comprise or be referred to as a substrate.
- Substrate 550 can comprise dielectric structure 551 , conductive structure 552 and dielectric structure 553 , and are sequentially formed in that order.
- Dielectric structure 551 can be first formed on substrate 550 to cover top surface 110 b of electronic component 110 , top surface 520 b of passive component 520 , top surfaces 130 b of antenna elements 130 , and top surface 540 b of encapsulant 540 to a uniform thickness.
- Apertures 551 x , 551 y and 551 z exposing internal interconnects 111 of electronic component 110 , conductive terminals 132 of antenna elements 130 and terminals 521 of passive component 520 , respectively, can be formed in dielectric structure 551 .
- Dielectric structure 551 can expose top surfaces of internal interconnects 111 of electronic component 110 through apertures 551 x , top surfaces of conductive terminals 132 of antenna elements 130 through apertures 551 y , and top surfaces of terminals 521 of passive component 520 through apertures 551 z , respectively.
- Dielectric structure 551 can be similar to, and can be similarly formed as dielectric structure 151 .
- Conductive structure 552 can cover internal interconnects 111 of electronic component 110 , conductive terminals 132 of antenna elements 130 and terminals 521 of passive component 520 , and are exposed through top surface of dielectric structure 551 and apertures 551 x , 551 y and 551 z.
- Conductive structure 552 can be formed to have multiple patterns, and are brought into contact with interconnects 111 of electronic component 110 , conductive terminals 132 of antenna elements 130 and terminals 521 of passive component 520 , and are exposed through apertures 551 x , 551 y and 551 z , respectively, and can be electrically connected.
- Conductive structure 552 can comprise traces 552 x electrically connecting internal interconnects 111 of electronic component 110 and terminals 521 of passive component 520 with each other. Trace 552 x can extend from a point over electronic component 110 to a point over passive component 520 to electrically connect internal interconnects 111 of electronic component 110 and conductive terminals 132 of antenna elements 130 with each other, like passive component 520 .
- Trace 552 x can also electrically connect internal interconnects 111 of electronic component 110 with conductive terminals 132 of antenna elements 130 , like conductive structure 152 shown in FIG. 2 G .
- Conductive structure 552 can be similar to, and can be similarly formed as conductive structure 152 .
- Dielectric structure 553 can cover dielectric structure 551 and conductive structure 552 to a uniform thickness. Aperture 553 x exposing top surface 552 b of conductive structure 552 can be formed in dielectric structure 553 . Dielectric structure 553 can also expose top surfaces of traces 552 y through apertures 553 x . Dielectric structure 553 can be similar to, and can be similarly formed as, dielectric structure 151 .
- substrate 550 Although only two dielectric structures 551 and 553 and one conductive structure 552 are shown in substrate 550 , this is not a limitation of the present disclosure. In some examples, the number of structures that make up substrate 550 can be smaller or greater than that shown in the present disclosure.
- FIGS. 8 F and 9 F show semiconductor device 500 at a later stage of manufacture.
- external interconnects 160 can be formed on top surface 552 b of conductive structure 552 .
- External interconnects 160 can be electrically connected to top surface 552 b of conductive structure 552 . External interconnects 160 can be electrically connected to electronic component 110 , passive component 520 or antenna elements 130 through substrate 150 . External interconnects 160 can be electrically connected to both of electronic component 110 and antenna elements 130 through conductors 152 x , or can be electrically connected to both of electronic component 110 and passive component 520 . External interconnects 160 can be similar to, and can be similarly formed as external interconnects 160 of semiconductor device 100 .
- FIG. 11 shows a cross-sectional view of an example semiconductor device 600 .
- semiconductor device 600 can comprise electronic component 610 , antenna elements 630 , encapsulant 640 , substrate 650 , and external interconnects 660 .
- Electronic component 610 can comprise internal interconnects 611 .
- Antenna elements 630 can comprise dielectric structure 631 , conductive structures 632 and 633 , and antenna patterns 634 .
- Substrate 650 can comprise dielectric structures 651 and 653 , and conductive structure 652 .
- Antenna elements 630 , encapsulant 640 , substrate 650 and external interconnects 660 can comprise or be referred to as semiconductor package 601 or package 601 , and can protect electronic component 610 from external elements or environmental exposure.
- FIGS. 12 A to 12 F show cross-sectional views of an example method for manufacturing an example semiconductor device 600 .
- FIG. 13 shows a plan view of an example method for manufacturing example semiconductor device 600 shown in FIG. 12 A .
- FIGS. 12 A and 13 show semiconductor device 600 at an early stage of manufacture.
- bottom surfaces 630 b of antenna elements 630 can be adhered to temporary bond layer 11 provided on carrier 10 .
- pick-and-place equipment can pick up and place antenna elements 630 on a surface of temporary bond layer 11 of carrier 10 and can be adhered to temporary bond layer 11 .
- two antenna elements 630 can be adhered onto carrier 10 so as to be positioned at opposite sides along second direction y.
- Two antenna elements 630 can be arranged such that inner surfaces 630 c of two antenna elements 630 face each other and can be spaced apart from each other.
- Each of antenna elements 630 can lengthwise extend along first direction x.
- Antenna elements 630 can be similar to, and can be similarly formed as antenna elements 130 .
- Antenna elements 630 can be varied by employing the layouts of antenna elements 230 , 330 and 430 shown in FIGS. 3 , 4 A, 4 B, 5 A to 5 C and 6 A to 6 D .
- antenna elements 630 can be varied by arbitrarily arranging vertical antennas or horizontal antennas in various manners.
- FIG. 12 B shows semiconductor device 600 at a later stage of manufacture.
- encapsulant 640 can cover carrier 10 and antenna elements 630 .
- encapsulant 640 can contact top surface of temporary bond layer 11 of carrier 10 and side surfaces of antenna elements 630 .
- antenna patterns 634 of antenna elements 630 can be exposed.
- Encapsulant 640 can be similar to, and can be similarly formed as encapsulant 140 .
- FIG. 12 C shows semiconductor device 600 at a later stage of manufacture.
- semiconductor device 600 can be flipped to remove carrier 10 in a state in which carrier 10 is positioned on antenna elements 630 and encapsulant 640 .
- Carrier 10 can be removed from top surfaces 630 b of antenna elements 630 and top surface 640 b of encapsulant 640 . Accordingly, top surfaces 630 b of antenna elements 630 and top surface 640 b of encapsulant 640 can be exposed. Conductive patterns 632 of antenna elements 630 can also be exposed. Removing of carrier 10 can be similar to removing of carrier 10 shown in FIG. 2 E .
- FIG. 12 D shows semiconductor device 600 at a later stage of manufacture.
- substrate 650 can be formed on top surfaces 630 b of antenna elements 630 and top surface 640 b of encapsulant 640 .
- substrate 650 can be similar to substrate 150 , or can comprise or be referred to as a substrate.
- Substrate 650 can comprise dielectric structure 651 , conductive structure 652 and dielectric structure 653 , and are sequentially formed in that order.
- Dielectric structure 651 can cover top surfaces 630 b of antenna elements 630 and top surface 640 b of encapsulant 640 to a uniform thickness. Apertures 651 x exposing conductive patterns 632 of antenna elements 630 can be formed in dielectric structure 651 . Dielectric structure 651 can expose top surfaces of conductive patterns 632 of antenna elements 630 through apertures 651 x . Dielectric structure 651 can be similar to, and can be similarly formed as dielectric structure 151 .
- Conductive structure 652 can cover top surface of dielectric structure 651 and conductive patterns 632 of antenna elements 630 exposed through apertures 651 x .
- Conductive structure 652 can have multiple patterns, and are brought into contact with conductive patterns 632 of antenna elements 630 , exposed through apertures 651 x , respectively, and can be electrically connected.
- Conductive structure 652 can be electrically connected to conductive patterns 632 of antenna elements 630 and can comprise traces 652 x extending along top surface 640 b of encapsulant 640 .
- Conductive structure 652 can be similar to, and can be similarly formed as conductive structure 152 .
- Dielectric structure 653 can cover dielectric structure 651 and conductive structure 652 to a uniform thickness. Apertures 653 x exposing top surface 652 b of conductive structure 652 can be formed in dielectric structure 653 . Dielectric structure 653 can also expose top surfaces of traces 652 x through apertures 653 x . Dielectric structure 653 can be similar to, and can be similarly formed as dielectric structure 651 .
- substrate 650 Although only two dielectric structures 651 and 653 and one conductive structure 652 are shown in substrate 650 , this is not a limitation of the present disclosure. In some examples, the number of structures that make up substrate 650 can be smaller or greater than that shown in the present disclosure.
- FIG. 12 E shows semiconductor device 600 at a later stage of manufacture.
- internal interconnects 611 of electronic component 610 can be electrically connected to top surface 652 b of conductive structure 652 .
- Electronic component 610 can be positioned at the center of substrate 650 .
- pick-and-place equipment can pick up and place electronic components 610 on traces 652 x of conductive structure 652 of substrate 650 . Subsequently, electronic component 610 can be electrically connected to conductive structure 652 of substrate 650 using a mass reflow process, a thermal compression process or a film assist bonding process. Electronic component 610 can be electrically connected to antenna elements 630 through conductive structure 652 of substrate 650 .
- electronic component 610 can comprise an active region and a non-active region.
- active region can be formed to face substrate 650 .
- active region can comprise internal interconnects 611 .
- internal interconnects 611 can comprise or be referred to as die pads, bond pads, aluminum pads, conductive pillars or conductive posts.
- Internal interconnects 611 can be connected to conductive structure 652 of substrate 650 using low melting point material 612 .
- low melting point material 612 can comprise one selected from the group consisting of Sn, Ag, Pb, Cu, Sn—Pb, Sn37-Pb, Sn95-Pb, Sn—Pb—Ag, Sn—Cu, Sn—Ag, Sn—Au, Sn—Bi, Sn—Ag—Cu, and equivalents.
- Internal interconnects 611 of electronic component 610 and conductive structure 652 of substrate 650 can be electrically connected to each other by such low melting point material 612 .
- Electronic component 610 can have an overall thickness in the range from approximately 0.1 mm to approximately 1 mm.
- FIG. 12 F shows semiconductor device 600 at a later stage of manufacture.
- external interconnects 660 are formed on top surface 652 b of conductive structure 652 .
- External interconnects 660 can be electrically connected to top surface 652 b of conductive structure 652 .
- External interconnects 660 can be arranged at exterior sides of electronic component 610 to be spaced apart from each other in a matrix configuration having rows or columns. External interconnects 660 can be electrically connected to electronic component 610 or antenna elements 630 through substrate 650 . External interconnects 660 can be electrically connected to both of electronic component 610 and antenna elements 630 through traces 652 x . External interconnects 660 can be similar to, and can be similarly formed as external interconnects 160 .
- FIG. 14 shows a cross-sectional view of an example semiconductor device 700 .
- semiconductor device 700 can comprise electronic component 710 , passive component 720 , antenna elements 630 , encapsulant 740 , substrate 750 , and external interconnects 760 .
- Electronic component 710 can comprise internal interconnects 711 .
- Passive component 720 can comprise terminals 721 .
- Antenna elements 630 can comprise dielectric structure 631 , conductive structures 632 and 133 , and antenna patterns 634 .
- Substrate 750 can comprise dielectric structures 751 and 653 and conductive structure 752 .
- Antenna elements 630 , encapsulant 740 , substrate 750 and external interconnects 760 can comprise or be referred to as semiconductor package 701 or package 701 , and can protect electronic component 710 from external elements or environmental exposure.
- Semiconductor package 701 can provide electrical coupling between an external element and electronic component 710 .
- FIGS. 15 A to 15 G show cross-sectional views of an example method for manufacturing an example semiconductor device 700 .
- FIGS. 16 A and 16 B show plan views of an example method for manufacturing example semiconductor device 700 shown in FIGS. 15 A and 15 B .
- FIGS. 15 A and 16 A show semiconductor device 700 at an early stage of manufacture.
- semiconductor device 700 can be prepared.
- Semiconductor device 700 shown in FIGS. 15 A and 16 A can be the similar with semiconductor device 600 manufactured by example method shown in FIGS. 12 A and 13 .
- FIG. 15 B shows semiconductor device 700 at a later stage of manufacture.
- bottom surface 720 b of passive component 720 can be adhered to a surface of temporary bond layer 11 of carrier 10 .
- Passive component 720 can be positioned between interior side surfaces 630 c of two spaced-apart antenna elements 630 .
- Passive component 720 can be arranged on temporary bond layer 11 of carrier 10 to be spaced apart from each other in a matrix configuration having rows or columns so as to be positioned between two antenna elements 630 spaced apart from each other in second direction y and can be adhered to temporary bond layer 11 of carrier 10 .
- Terminals 721 of passive component 720 can also be adhered to temporary bond layer 11 .
- Passive component 720 can be similar to, and can be similarly formed as passive component 520 .
- FIG. 15 C shows semiconductor device 700 at a later stage of manufacture.
- encapsulant 740 can cover carrier 10 , passive component 720 , and antenna elements 630 .
- encapsulant 740 can be brought into contact with top surface of temporary bond layer 11 of carrier 10 , top and side surfaces of passive component 720 and side surfaces of antenna elements 630 .
- antenna patterns 634 of antenna elements 630 can be exposed.
- Encapsulant 740 can be similar to, and can be similarly formed as encapsulant 140 .
- FIG. 15 D shows semiconductor device 700 at a later stage of manufacture.
- semiconductor device 700 can be flipped to remove carrier 10 in a state in which carrier 10 is positioned on antenna elements 630 and encapsulant 740 .
- Carrier 10 can be removed from top surfaces 630 b of antenna elements 630 , top surface 720 b of passive component 720 and top surface 740 b of encapsulant 740 . Accordingly, top surfaces 630 b of antenna elements 630 , top surface 720 b of passive component 720 and top surface 740 b of encapsulant 740 can also be exposed. Terminals 721 of passive component 720 and conductive patterns 632 of antenna elements 630 can also be exposed. Removing of carrier 10 can be similar to removing of carrier 10 shown in FIG. 2 E .
- FIG. 15 E shows semiconductor device 700 at a later stage of manufacture.
- substrate 750 can be formed on top surfaces 630 b of antenna elements 630 and top surface 740 b of encapsulant 740 .
- substrate 650 can be similar to substrate 150 , or can comprise or be referred to as a substrate.
- Substrate 750 can comprise dielectric structure 751 , conductive structure 752 and dielectric structure 753 , and are sequentially formed in that order.
- Dielectric structure 751 can cover top surfaces 630 b of antenna elements 630 , top surface 720 b of passive component 720 and top surface 740 b of encapsulant 740 to a uniform thickness. Apertures 751 x and 751 y exposing conductive patterns 632 of antenna elements 630 and terminals 721 of passive component 720 can be formed in dielectric structure 751 . Dielectric structure 751 can also expose conductive patterns 632 of antenna elements 630 and terminals 721 of passive component 720 through apertures 751 x and 751 y . Dielectric structure 751 can be similar to, and can be similarly formed as dielectric structure 151 .
- Conductive structure 752 can cover top surface of dielectric structure 751 , conductive patterns 632 of antenna elements 630 and terminals 721 of passive component 720 , exposed through apertures 751 x and 751 y .
- Conductive structure 752 can have multiple patterns, and are brought into contact with conductive patterns 632 of antenna elements 630 and terminals 721 of passive component 720 , exposed through apertures 751 x and 751 y , respectively, and can be electrically connected.
- Conductive structure 752 can be electrically connected to terminals 721 of passive component 720 and can comprise traces 752 y extending along top surface 740 b of encapsulant 740 .
- Traces 752 y can be electrically connected to conductive patterns 632 of antenna elements 630 , like in conductive structure 652 shown in FIG. 12 D , and can extend along top surface 740 b of encapsulant 740 .
- Conductive structure 752 can be similar to, and can be similarly formed as conductive structure 152 .
- Dielectric structure 753 can cover dielectric structure 751 and conductive structure 752 to a uniform thickness. Apertures 753 x exposing top surface 752 b of conductive structure 752 can be formed in dielectric structure 753 . Dielectric structure 753 can also expose top surfaces of traces 752 y through apertures 753 x . dielectric structure 753 can be similar to, and can be similarly formed as, dielectric structure 751 .
- substrate 750 Although only two dielectric structures 751 and 753 and one conductive structure 752 are shown in substrate 750 , this is not a limitation of the present disclosure. In some examples, the number of structures that make up substrate 750 can be smaller or greater than that shown in the present disclosure.
- FIG. 15 F shows semiconductor device 700 at a later stage of manufacture.
- internal interconnects 711 of electronic component 710 can be electrically connected to top surface 752 b of conductive structure 752 .
- Electronic component 710 can be positioned at the center of substrate 750 .
- Electronic component 710 can be positioned on traces 752 y to be electrically connected to conductive structure 752 .
- Electronic component 710 can be electrically connected to passive component 720 or antenna elements 730 through substrate 750 .
- Electronic component 710 can be similar to, and can be similarly formed as electronic component 610 .
- FIG. 15 G shows semiconductor device 700 at a later stage of manufacture.
- external interconnects 760 can be formed on top surface 752 b of conductive structure 752 .
- External interconnects 760 can be electrically connected to top surface 752 b of conductive structure 752 .
- External interconnects 760 can be formed at exterior sides of electronic component 710 to be spaced apart from each other in a matrix configuration having rows or columns. External interconnects 760 can be electrically connected to electronic component 710 , passive component 720 or antenna elements 730 through substrate 750 . External interconnects 760 can be electrically connected to both of electronic component 710 and passive component 720 through traces 752 y , or to both of electronic component 710 and antenna elements 630 . External interconnects 760 can be similar to, and can be similarly formed as external interconnects 160 .
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Abstract
Description
- The present disclosure relates, in general, to electronic components, and more particularly, to semiconductor devices and methods for manufacturing semiconductor devices.
- Prior semiconductor packages and methods for forming semiconductor packages are inadequate, for example resulting in excess cost, decreased reliability, relatively low performance, or package sizes that are too large. Further limitations and disadvantages of conventional and traditional approaches will become apparent to one of skill in the art, through comparison of such approaches with the present disclosure and reference to the drawings.
-
FIG. 1 shows a cross-sectional view of an example semiconductor device. -
FIGS. 2A to 2I show cross-sectional views of an example method for manufacturing an example semiconductor device. -
FIG. 3 shows a plan view of an example method for manufacturing an example semiconductor device shown inFIG. 2C . -
FIGS. 4A and 4B show a plan view and a cross-sectional view of example antenna elements and an example layout of antenna elements, which can be applied to an example method for manufacturing an example semiconductor device. -
FIGS. 5A to 5C show a plan view and cross-sectional views of example antenna elements and an example layout of antenna elements, which can be applied to an example method for manufacturing an example semiconductor device. -
FIGS. 6A to 6F show a plan view and cross-sectional views of example antenna elements and an example layout of antenna elements, which can be applied to an example method for manufacturing an example semiconductor device. -
FIGS. 7A to 7D show a plan view and cross-sectional views of an example semiconductor device. -
FIGS. 8A to 8F show cross-sectional views of an example method for manufacturing an example semiconductor device. -
FIGS. 9A to 9F show cross-sectional views of an example method for manufacturing example semiconductor device shown inFIGS. 8A to 8F . -
FIGS. 10A and 10B show plan views of an example method for manufacturing example semiconductor device shown inFIGS. 8A and 8B . -
FIG. 11 shows a cross-sectional view of an example semiconductor device. -
FIGS. 12A to 12F show cross-sectional views of an example method for manufacturing an example semiconductor device. -
FIG. 13 shows a plan view of an example method for manufacturing example semiconductor device shown inFIG. 12A . -
FIG. 14 shows a cross-sectional view of an example semiconductor device. -
FIGS. 15A to 15G show cross-sectional views of an example method for manufacturing an example semiconductor device. -
FIGS. 16A and 16B show plan views of an example method for manufacturing example semiconductor device shown inFIGS. 15A and 15B . - The following discussion provides various examples of semiconductor devices and methods of manufacturing semiconductor devices. Such examples are non-limiting, and the scope of the appended claims should not be limited to the particular examples disclosed. In the following discussion, the terms “example” and “e.g.” are non-limiting.
- The figures illustrate the general manner of construction, and descriptions and details of well-known features and techniques may be omitted to avoid unnecessarily obscuring the present disclosure. In addition, elements in the drawing figures are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of the examples discussed in the present disclosure. The same reference numerals in different figures denote the same elements.
- The term “or” means any one or more of the items in the list joined by “or”. As an example, “x or y” means any element of the three-element set {(x), (y), (x, y)}. As another example, “x, y, or z” means any element of the seven-element set {(x), (y), (z), (x, y), (x, z), (y, z), (x, y, z)}.
- The terms “comprises,” “comprising,” “includes,” or “including,” are “open ended” terms and specify the presence of stated features, but do not preclude the presence or addition of one or more other features.
- The terms “first,” “second,” etc. may be used herein to describe various elements, and these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, for example, a first element discussed in this disclosure could be termed a second element without departing from the teachings of the present disclosure.
- Unless specified otherwise, the term “coupled” may be used to describe two elements directly contacting each other or describe two elements indirectly connected by one or more other elements. For example, if element A is coupled to element B, then element A can be directly contacting element B or indirectly connected to element B by an intervening element C. Similarly, the terms “over” or “on” may be used to describe two elements directly contacting each other or describe two elements indirectly connected by one or more other elements.
- In one example, a semiconductor device can comprise (a) a substrate comprising a substrate top side, a substrate bottom side a substrate dielectric structure between the substrate top side and the substrate bottom side, and a substrate conductive structure that traverses the substrate dielectric structure and comprises a first substrate terminal, and a second substrate terminal at the substrate top side, (b) an electronic component coupled to the substrate and comprising a component terminal coupled to the first substrate terminal, and (c) a first antenna element coupled to the substrate and comprising a first element dielectric structure, a first antenna pattern coupled to the first element dielectric structure, a first element terminal coupled to the second substrate terminal, a first element head side adjacent first antenna pattern, a first element base side opposite the first element side, and a first element sidewall between the first element head side and the first element base side. The first element terminal can be exposed from the first element dielectric structure at at least one of the first element base side or the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The first antenna element can be coupled to the substrate outside a footprint of the electronic component. The substrate conductive structure can couple the first antenna element to the electronic component.
- Other examples are included in the present disclosure. Such examples may be found in the figures, in the claims, or in the description of the present disclosure.
-
FIG. 1 shows a cross-sectional view of anexample semiconductor device 100. In the example shown inFIG. 1 ,semiconductor device 100 can compriseelectronic component 110,antenna elements 130, encapsulant 140,substrate 150, andexternal interconnects 160. -
Electronic component 110 can compriseinternal interconnects 111 and electromagnetic interference (EMI)shield 112.Antenna elements 130 can comprisedielectric structure 131,conductive structures antenna patterns 134.Substrate 150 can comprisedielectric structures conductive structure 152. -
Antenna elements 130,encapsulant 140,substrate 150 andexternal interconnects 160 can comprise or be referred to assemiconductor package 101 orpackage 101, and can protectelectronic component 110 from external elements or environmental exposure.Semiconductor package 101 can provide electrical coupling between an external element andelectronic component 110. -
FIGS. 2A to 2I show cross-sectional views of an example method for manufacturingexample semiconductor device 100.FIG. 3 shows a plan view of an example method for manufacturingexample semiconductor device 100. -
FIG. 2A shows a cross-sectional view ofsemiconductor device 100 at an early stage of manufacture. In the example shown inFIG. 2A ,bottom surface 110 b ofelectronic component 110 can be attached totemporary bond layer 11 formed oncarrier 10. In some examples, multipleelectronic components 110 can be arranged to be spaced apart from each other in a matrix configuration having rows or columns and can be attached tocarrier 10. - In some examples, pick-and-place equipment can pick up and place
electronic components 110 ontemporary bond layer 11 ofcarrier 10 and can be adhered totemporary bond layer 11.Electronic component 110 can have a substantially planar top surface (or a non-active region), a substantially bottom surface (or an active region) opposite to top surface, and side surfaces connecting top and bottom surfaces to each other. Bottom surface ofelectronic component 110 can be adhered totemporary bond layer 11 ofcarrier 10.Electronic component 110 can comprise at least oneinternal interconnects 111 on its bottom surface. Internal interconnects 111 can be adhered totemporary bond layer 11 ofcarrier 10. Internal interconnects 111 can be external input/output terminals ofelectronic component 110 and can comprise or be referred to as die pads or bond pads. Internal interconnects 111 can have a width in the range from approximately 2 μm (micrometers) to approximately 500 μm. Internal interconnects 111 can have a thickness in the range from approximately 3 μm to approximately 50 μm. Internal interconnects 111 can comprise an electrically conductive material, such as, for example, a metallic material, aluminum, copper, an aluminum alloy, or a copper alloy. -
Electronic component 110 can comprise or be referred to as a semiconductor die, a semiconductor chip, or a semiconductor package or sub-package. In some examples,electronic component 110 can comprise at least one of an application specific integrated circuit, a logic die, a micro control unit, a memory, a digital signal processor, a network processor, a power management unit, an audio processor, an RF circuit, and a wireless baseband system on chip processor.Electronic component 110 can have a thickness in the range from approximately 0.01 mm (millimeter) to approximately 1 mm. -
Carrier 10 can be a substantially planar plate. For example,carrier 10 can comprise or be referred to as a board, a wafer, a panel, a semiconductor or a strip. In someexamples carrier 10 can comprise, for example steel, stainless steel, aluminum, copper, ceramic, glass, or a wafer.Carrier 10 can have a thickness in the range from approximately 0.5 mm to approximately 1.5 mm and a width in the range from approximately 200 mm to approximately 320 mm. -
Carrier 10 can function to handle multiple elements in an integrated manner for attachingelectronic component 110 andantenna elements 130, formingEMI shield 112 and formingencapsulant 140.Carrier 10 can be commonly applied to some examples of this disclosure. -
Temporary bond layer 11 can be provided on a surface ofcarrier 10.Temporary bond layer 11 can be provided on surface ofcarrier 10 using a coating process, such as spin coating, doctor blade, casting, painting, spray coating, slot die coating, curtain coating, slide coating or knife over edge coating; a printing process, such as screen printing, pad printing, gravure printing, flexographic coating or offset printing; an inkjet printing process having intermediate features of coating and printing; or direct attachment of an adhesive film or an adhesive tape.Temporary bond layer 11 can comprise or be referred to as a temporary adhesive film or a temporary adhesive tape.Temporary bond layer 11 can be, for example, a thermally releasable tape (film) or a UV releasable tape (film), and is weakened or is removed by heat or UV irradiation in its bonding strength. In some examples,temporary bond layer 11 can have a weakened bonding strength or can be removed by physical or chemical external forces.Temporary bond layer 11 can have a thickness in the range from approximately 20 μm to approximately 500 μm.Temporary bond layer 11 can allowcarrier 10 to be separated afterencapsulant 140 to be described later is formed.Temporary bond layer 11 can be commonly applied to some examples of this disclosure. -
FIG. 2B showssemiconductor device 100 at a later stage of manufacture. In the example shown inFIG. 2B ,EMI shield 112 can coverelectronic component 110.EMI shield 112 can contact top and side surfaces ofelectronic component 110.EMI shield 112 can entirely cover top and side surfaces ofelectronic component 110 to a uniform thickness. -
EMI shield 112 can be made of a conductive material so as to perform a function of shielding EMI induced fromantenna elements 130 or externally induced toelectronic component 110. In some examples,EMI shield 112 can comprise silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), palladium (Pd) or chrome (Cr). In some examples,EMI shield 112 can be formed by sputtering, spraying, coating or plating. In some examples, a cap-shaped metal lid can be used asEMI shield 112.EMI shield 112 can have a thickness in the range from approximately 0.1 μm to approximately 10 μm. -
FIGS. 2C and 3 show semiconductor device 100 at a later stage of manufacture. In the example shown inFIGS. 2C , bottom surfaces 130 b ofantenna elements 130 can be adhered totemporary bond layer 11 provided oncarrier 10. - In some examples, pick-and-place equipment can pick up
antenna elements 130 to place on a surface oftemporary bond layer 11 ofcarrier 10 and can be adhered. In some examples,antenna elements 130 can be configured such that two antennas are adhered ontocarrier 10 so as to be positioned at opposite sides ofelectronic component 110.Inner surfaces 130 c ofantenna elements 130 can be spaced apart fromside surfaces 110 c ofelectronic component 110 havingEMI shield 112. Here,inner surfaces 130 c ofantenna elements 130 can face side surfaces 110 c ofelectronic component 110, andouter surfaces 130 d ofantenna elements 130 can face outward so as to be opposite toinner surfaces 130 c ofantenna elements 130.Antenna elements 130 can extend parallel toside surfaces 110 c ofelectronic component 110.Antenna elements 130 can comprise a length in the range from approximately 0.01 mm to approximately 20 mm.Antenna elements 130 can comprise a width in the range from approximately 0.01 mm to approximately 20 mm. Each ofantenna elements 130 can have a thickness or height in the range from approximately 0.01 mm to approximately 1 mm. In some examples,antenna elements 130 can comprise or be referred to as antenna substrates, antenna modules, or antenna blocks. -
Antenna elements 130 can comprisedielectric structure 131 having substantially planar top and bottom surfaces,conductive structures dielectric structure 131, andantenna patterns 134 exposed to top surface ofdielectric structure 131.Conductive structures terminals 132 exposed to bottom surface ofdielectric structure 131, andconductive path 133 formed insidedielectric structure 131. In some examples,antenna elements 130 can be configured such that one or more ofdielectric structure 131 andconductive path 133 are sequentially stacked vertically. - In some examples,
dielectric structure 131 can have substantially planar top and bottom surfaces. In some examples,dielectric structure 131 can comprise or be referred to as one or more dielectric layers, dielectrics, dielectric materials, insulating layers, or insulating materials. In some examples,dielectric structure 131 can comprise epoxy resin, phenol resin, glass epoxy, polyimide, polyester, epoxy molding compound, glass, or ceramic.Dielectric structure 131 can be configured such that one or more dielectric layers are upwardly stacked.Dielectric structure 131 can makeantenna elements 130 maintained at a substantially planar state. -
Conductive terminals 132 can be exposed through bottom surface ofdielectric structure 131.Conductive terminals 132 can have one or more patterns.Conductive terminals 132 can be electrically connected to at least oneconductive path 133. Each ofconductive terminals 132 can comprise or be referred to as a conductor, a conductive material, an antenna land, a conductive land, an antenna pad, a wiring pad, a connection pad, a micro pad, a trace or an under-bump-metallurgy (UBM). In some examples,conductive terminals 132 can comprise copper, iron, nickel, gold, silver, palladium or tin. -
Conductive path 133 can pass throughdielectric structure 131 to then electrically connectconductive terminals 132 withantenna patterns 134. In some examples,conductive path 133 can comprise or be referred to as a conductor, a conductive material, a conductive via, a conductive path, a conductive trace, a conductive pattern, a conductive layer, a redistribution layer, or a circuit pattern.Conductive path 133 can be configured such that one or more conductive layers are upwardly stacked using a variety of patterns. In some examples,conductive path 133 can comprise copper, iron, nickel, gold, silver, palladium or tin. -
Antenna patterns 134 can be exposed throughtop surface 130 a ofdielectric structure 131 so as to enable communication.Antenna patterns 134 can have one or more patterns.Antenna patterns 134 can be electrically connected to at least oneconductive path 132. In some examples, each ofantenna patterns 134 can comprise or be referred to as a dipole antenna, a monopole antenna, a patch antenna, a loop antenna, a beam antenna, a doublet antenna, a folded antenna, a rhombic antenna or a half wave antenna. In some examples,antenna patterns 134 can comprise copper, gold or silver. -
Antenna elements 130 can vertically transmit/receive signals usingantenna patterns 134 positioned on upper portions ofantenna elements 130.Such antenna elements 130 can be vertical antennas.Antenna elements 130 can be varied in various manners in view of structure and layout. In the following discussion, example antenna elements and example layout of antenna elements that can be varied in various manners will be described. -
FIGS. 4A and 4B show views of example antenna element layout, with cross-sectional view taken alongline 4B-4B inFIG. 4A , that can be applied to an example method for manufacturing an example semiconductor device such assemiconductor device 100 orsemiconductor device 1004. In some examples,antenna elements 230 can be similar toantenna elements 130, but can be oriented in differently. In the examples shown inFIGS. 4A and 4B , twoantenna elements 230 can be coupled withcarrier 10 orsubstrate 150 so as to be positioned at opposite sides ofelectronic component 110, likeantenna elements 130 shown inFIGS. 2C and 3 . In some examples,antenna elements 230 can be arranged in similar manner toantenna elements 130 shown inFIG. 2C . In some examples,antenna elements 230 can be configured such that one or more of each ofdielectric structure 231 andconductive structure 232 are sequentially stacked, whether inwards, outwards, or upwards. - Each of
antenna elements 230 can comprisedielectric structure 231 having substantially planar top and bottom surfaces,conductive structure 232 formed insidedielectric structure 231 and exposed to a portion ofbottom surface 230 b ofdielectric structure 231, andantenna patterns 234 exposed toouter surface 230 d ofdielectric structure 231. - In some examples,
dielectric structure 231 can be similar todielectric structure 131 shown inFIGS. 2C and 3 .Dielectric structure 231 can be configured such that one or more dielectric layers are stacked along y-axis. -
Conductive structure 232 can be formed insidedielectric structure 131 and can be exposed tobottom surface 230 b ofdielectric structure 231.Conductive structure 232 can be electrically connected toantenna patterns 134 and can be exposed tobottom surface 230 b ofdielectric structure 231. In some examples,conductive structure 232 can comprise or be referred to as a conductor, a conductive material, a conductive via, a conductive path, a conductive trace, a conductive pattern, a conductive layer, a redistribution layer (RDL), or a circuit pattern.Conductive structure 232 can be configured such that one or more conductive layers are stacked frominner surface 230 c toouter surface 230 d using a variety of patterns. In some examples,conductive path 232 can comprise copper, iron, nickel, gold, silver, palladium or tin. -
Antenna patterns 234 can be exposed through outer surface 230 a ofdielectric structure 231 so as to enable communication.Antenna patterns 234 can be formed on outer surface 230 a ofdielectric structure 231 so as to have one or more patterns.Antenna patterns 234 can be electrically connected to at least oneconductive structure 232. In some examples, each ofantenna patterns 234 can comprise or be referred to as a dipole antenna, a monopole antenna, a patch antenna, a loop antenna, a beam antenna, a doublet antenna, a folded antenna, a rhombic antenna or a half wave antenna. In some examples,antenna patterns 234 can comprise copper, gold or silver. -
Antenna elements 230 can outwardly transmit/receive signals usingantenna patterns 234 positioned onouter surfaces 230 d ofantenna elements 230.Such antenna elements 230 can be horizontal antennas. -
FIGS. 5A, 5B and 5C show views of example antenna element layout, with cross-sectional views taken along thelines 5B-5B and 5C-5C inFIG. 5A , that can be applied to an example method for manufacturing example semiconductor device such assemiconductor device 100 orsemiconductor device 1005. In the example shown inFIGS. 5A to 5C , four antenna elements 330 can be coupled withcarrier 10 orsubstrate 150 such that two antennas are positioned at opposite sides ofelectronic component 110. Antenna elements 330 can comprise twovertical antennas 330 x havingantenna patterns 334 x similar toantenna elements 130 shown inFIGS. 2C and 3 , and twohorizontal antennas 330 y havingantenna patterns 334 y similar toantenna elements 230 shown inFIGS. 4A and 4B .Vertical antennas 330 x can be similar toantenna elements 130 shown inFIGS. 2C and 3 , andhorizontal antennas 330 y can be similar toantenna elements 230 shown inFIGS. 4A and 4B - Antenna elements 330 can vertically transmit/receive signals using
vertical antennas 330 x havingantenna patterns 334 x positioned on upper portions of antenna elements 330 and can laterally transmit/receive signals usinghorizontal antennas 330 y havingantenna patterns 334 y positioned on outer surfaces of thehorizontal antennas 330 y. - Antenna elements 330 can be configured such that two
antennas electronic component 110, and twoantennas electronic component 110. - Each of
antennas antennas antennas -
FIGS. 6A, 6B, 6C and 6D show views of example antenna element layout, with cross-sectional views taken alonglines 6B-6B, 6C-6C, and 6D-6D inFIG. 6A , that can be applied to an example method for manufacturing example semiconductor device such assemiconductor device 100 orsemiconductor device 1006. In the example shown inFIGS. 6A to 6D , six antenna elements can be coupled withcarrier 10 orsubstrate 150 such thatantenna elements electronic component 110, like in the layout of antenna elements 330 shown inFIGS. 5A, 5B and 5C , and antenna elements 430 z are lengthwise arranged at second opposite sides ofelectronic component 110. - Antenna elements 330 can comprise
vertical antenna elements 330 x having antenna patterns 334 atelement head side 135 facing one or more vertical directions, and twohorizontal antennas 330 y having antenna patterns 334 atelement head side 135 facing respective rightward and leftward horizontal directions, similar to antenna elements 330 shown inFIGS. 5A to 5C . Antenna elements 430 can comprise horizontal antenna elements 430 z havingantenna patterns 134 atelement head side 135 facing respective upward and downward horizontal directions. -
Vertical antennas 330 x can be configured in similar manner withantenna elements 130 shown inFIGS. 2C and 3 , andhorizontal antennas 330 y and 430 z can be configured in similar manner withantenna elements 230 shown inFIGS. 4A and 4B . - The antenna elements of
semiconductor device 1006 can vertically transmit/receive signals usingvertical antenna elements 330 x, and can horizontally transmit/receive signals usinghorizontal antenna elements 330 y and 430 z. In some examples,individual antenna elements antenna element 130 or similar to each other. In some examples,antenna elements carrier 10 orsubstrate 150. - In addition to the configurations and layouts of
antenna elements FIGS. 2C, 3, 4A, 4B, 5A to 5C and 6A to 6D , antenna elements can be varied in view of configuration and layout by arranging vertical antennas or horizontal antennas similar to those described in various manners. -
FIG. 2D showssemiconductor device 100 at a later stage of manufacture. In the example shown inFIG. 2D ,encapsulant 140 can covercarrier 10,electronic component 110, andantenna elements 130. In some examples,encapsulant 140 can be brought into contact with top surface oftemporary bond layer 11 ofcarrier 10, outer surface ofEMI shield 112 ofelectronic component 110, and side surfaces ofantenna elements 130. Here,antenna patterns 134 ofantenna elements 130 can be exposed. - In some examples,
encapsulant 140 can comprise or be referred to as epoxy molding compound, epoxy molding resin or sealant. In some examples,encapsulant 140 can comprise or be referred to as a molding part, a sealing part, an encapsulation part, a protection part, a package or a body. In some examples,encapsulant 140 can comprise, an organic resin, an inorganic filler, a curing agent, a catalyst, a coupling agent, a coloring agent, and a flame retardant.Encapsulant 140 can be formed by any of a variety of processes. In some examples,encapsulant 140 can be formed using, compression molding, transfer molding, liquid-phase encapsulant molding, vacuum lamination, paste printing or film assist molding.Encapsulant 140 can have a thickness in the range from approximately 0.1 mm to approximately 2 mm.Encapsulant 140 can coverelectronic component 110 andantenna elements 130 to protectelectronic component 110 andantenna elements 130 from external elements or environmental exposure. -
FIG. 2E showssemiconductor device 100 at a later stage of manufacture. In the example shown inFIG. 2E ,semiconductor device 100 can be flipped to removecarrier 10 in a state in whichcarrier 10 is positioned onelectronic component 110,antenna elements 130, andencapsulant 140. Ifsemiconductor device 100 is flipped in such a manner,antenna patterns 134 ofantenna elements 130 can be positioned on a bottom surface ofsemiconductor device 100. -
Carrier 10 can be removed fromtop surface 110 b ofelectronic component 110,top surfaces 130 b ofantenna elements 130, andtop surface 140 b ofencapsulant 140.Temporary bond layer 11 can be removed fromelectronic component 110,antenna elements 130, andencapsulant 140 in a state in whichtemporary bond layer 11 is adhered tocarrier 10. In some examples, heat, light, a chemical solution or physical force can be formed totemporary bond layer 11, thereby removing or reducing bonding strength oftemporary bond layer 11. Accordingly,top surface 110 b ofelectronic component 110,top surfaces 130 b ofantenna elements 130, andtop surface 140 b ofencapsulant 140, can be exposed. Internal interconnects 111 ofelectronic component 110 andconductive terminals 132 ofantenna elements 130 can also be exposed. -
FIG. 2F showssemiconductor device 100 at a later stage of manufacture. In the example shown inFIG. 2F ,dielectric structure 151 can be formed ontop surface 110 b ofelectronic component 110,top surfaces 130 b ofantenna elements 130, andtop surface 140 b ofencapsulant 140, and can be patterned, thereby exposinginternal interconnects 111 andconductive terminals 132. -
Dielectric structure 151 can have a uniform thickness so as to covertop surface 110 b ofelectronic component 110,top surfaces 130 b ofantenna elements 130, andtop surface 140 b ofencapsulant 140.Apertures internal interconnects 111 ofelectronic component 110 andconductive terminals 132 ofantenna elements 130, can be formed indielectric structure 151. -
Dielectric structure 151 can comprise or be referred to as dielectrics, a dielectric material, a dielectric layer, a passivation layer, an insulating layer, or a protection layer. In some examples,dielectric structure 151 can comprise, an electrically insulating material, such as, for example, a polymer, polyimide (PI), benzocyclobutene (BCB), polybenzoxazole (PBO), bismaleimide triazine (BT), a molding material, a phenolic resin, an epoxy, silicone, or an acrylate polymer. In some examples,dielectric structure 151 can be formed by any of a variety of processes.Dielectric structure 151 can be formed by, for example, spin coating, spray coating, printing, PVD, CVD, MOCVD, ALD, LPCVD, or PECVD.Dielectric structure 151 can have a thickness in the range from approximately 5 μm to approximately 50 μm. - For example, a mask pattern can be formed on top surface of
dielectric structure 151 and exposeddielectric structure 151 can be removed by etching, thereby formingapertures Apertures Dielectric structure 151 can expose top surfaces ofinternal interconnects 111 ofelectronic component 110 throughapertures 151 x, and top surfaces ofconductive terminals 132 ofantenna elements 130 throughapertures 151 y. For example, photoresist can be used as the mask pattern. -
FIG. 2G showssemiconductor device 100 at a later stage of manufacture. In the example shown inFIG. 2G ,conductive structure 152 can cover top surface ofdielectric structure 151, andinternal interconnects 111 ofelectronic component 110 andconductive terminals 132 ofantenna elements 130, exposed throughapertures -
Conductive structure 152 can have multiple patterns, and are brought into contact withinternal interconnects 111 ofelectronic component 110 andconductive terminals 132 ofantenna elements 130, exposed throughapertures Conductive structure 152 can compriseconductors 152 x electrically connectinginternal interconnects 111 ofelectronic component 110 andconductive terminals 132 ofantenna elements 130 with each other.Conductors 152 x can extend from a point overelectronic component 110 to a point over each ofantenna elements 130 to electrically connectelectronic component 110 andantenna elements 130. - In some examples,
conductive structure 152 can comprise or be referred to as conductors, a conductive material, a conductive layer, a redistribution layer (RDL), a wiring pattern, a trace pattern, or a circuit pattern. In some examples,conductive terminals 132 can comprise copper, iron, nickel, gold, silver, palladium or tin. In some examples, one ormore conductors 152 x can comprise or be referred to as traces, terminals, pads, vias, conductive patterns, conductive layers, or conductive paths, and can extend both within and beyond the footprint ofelectronic component 110. In some examples,conductive structure 152 can be formed using, for example, any of a variety of conductive materials (e.g., copper, gold, silver, or equivalents).Conductive structure 152 can be formed by any of a variety of processes (e.g., sputtering, electroless plating, electroplating, PVD, CVD, MOCVD, ALD, LPCVD, PECVD, or equivalents).Conductive structure 152 can be formed to have a uniform thickness so as to cover top surface ofdielectric structure 151,internal interconnects 111 ofelectronic component 110 andconductive terminals 132 ofantenna elements 130, exposed throughapertures Conductive structure 152 can have a thickness in the range from approximately 3 μm to approximately 50 μm. -
FIG. 2H showssemiconductor device 100 at a later stage of manufacture. In the example shown inFIG. 2H ,dielectric structure 153 can coverdielectric structure 151 andconductive structure 152 to a uniform thickness. Apertures 153 x exposingtop surface 152 b ofconductive structure 152 can be formed indielectric structure 153.Dielectric structure 153 can also expose top surfaces ofconductors 152 x through apertures 153 x.Dielectric structure 153 can be similar to, and can be similarly formed as,dielectric structure 151. - Although only two
dielectric structures conductive structure 152 are shown insubstrate 150, this is not a limitation of the present disclosure. In some examples, the number of structures that make upsubstrate 150 can be smaller or greater than that shown in the present disclosure. -
Substrate 150 is presented as a redistribution layer (“RDL”) substrate in the present example. RDL substrates can comprise one or more conductive redistribution layers and one or more dielectric layers that (a) can be formed layer by layer over an electronic component to which the RDL substrate is to be electrically coupled, or (b) can be formed layer by layer over a carrier that can be entirely removed or at least partially removed after the electronic component and the RDL substrate are coupled together. RDL substrates can be manufactured layer by layer as a wafer-level substrate on a round wafer in a wafer-level process, or as a panel-level substrate on a rectangular or square panel carrier in a panel-level process. RDL substrates can be formed in an additive buildup process that can include one or more dielectric layers alternatingly stacked with one or more conductive layers that define respective conductive redistribution patterns or traces configured to collectively (a) fan-out electrical traces outside the footprint of the electronic component, or (b) fan-in electrical traces within the footprint of the electronic component. The conductive patterns can be formed using a plating process such as, for example, an electroplating process or an electroless plating process. The conductive patterns can comprise an electrically conductive material such as, for example, copper or other plateable metal. The locations of the conductive patterns can be made using a photo-patterning process such as, for example, a photolithography process and a photoresist material to form a photolithographic mask. The dielectric layers of the RDL substrate can be patterned with a photo-patterning process, which can include a photolithographic mask through which light is exposed to photo-pattern desired features such as vias in the dielectric layers. The dielectric layers can be made from photo-definable organic dielectric materials such as, for example, polyimide (PI), benzocyclobutene (BCB), or polybenzoxazole (PBO). Such dielectric materials can be spun-on or otherwise coated in liquid form, rather than attached as a pre-formed film. To permit proper formation of desired photo-defined features, such photo-definable dielectric materials can omit structural reinforcers or can be filler-free, without strands, weaves, or other particles, that could interfere with the light from the photo-patterning process. In some examples, such filler-free characteristics of filler-free dielectric materials can permit a reduction of the thickness of the resulting dielectric layer. Although the photo-definable dielectric materials described above can be organic materials, in some examples the dielectric materials of the RDL substrates can comprise one or more inorganic dielectric layers. Some examples of inorganic dielectric layer(s) can comprise silicon nitride (Si3N4), silicon oxide (SiO2), or SiON. The inorganic dielectric layer(s) can be formed by growing the inorganic dielectric layers using an oxidation or nitridization process instead using photo-defined organic dielectric materials. Such inorganic dielectric layers can be filler-fee, without strands, weaves, or other dissimilar inorganic particles. In some examples, the RDL substrates can omit a permanent core structure or carrier such as, for example, a dielectric material comprising bismaleimide triazine (BT) or FR4 and these types of RDL substrates can comprise or be referred to as a coreless substrate. Other substrates in this disclosure can also comprise an RDL substrate. - In some examples,
substrate 150 can be a pre-formed substrate. The pre-formed substrate can be manufactured prior to attachment to an electronic component and can comprise dielectric layers between respective conductive layers. The conductive layers can comprise copper and can be formed using an electroplating process. The dielectric layers can be relatively thicker non-photo-definable layers that can be attached as a pre-formed film rather than as a liquid and can include a resin with fillers such as strands, weaves, or other inorganic particles for rigidity or structural support. Since the dielectric layers are non-photo-definable, features such as vias or openings can be formed by using a drill or laser. In some examples, the dielectric layers can comprise a prepreg material or Ajinomoto Buildup Film (ABF). The pre-formed substrate can include a permanent core structure or carrier such as, for example, a dielectric material comprising bismaleimide triazine (BT) or FR4, and dielectric and conductive layers can be formed on the permanent core structure. In some examples, the pre-formed substrate can be a coreless substrate which omits the permanent core structure, and the dielectric and conductive layers can be formed on a sacrificial carrier that is removed after formation of the dielectric and conductive layers and before attachment to the electronic component. The pre-formed substrate can rereferred to as a printed circuit board (PCB) or a laminate substrate. Such pre-formed substrate can be formed through a semi-additive or modified-semi-additive process. Other substrates in this disclosure can also comprise a pre-formed substrate. -
FIG. 2I showssemiconductor device 100 at a later stage of manufacture. In the example shown inFIG. 2I ,external interconnects 160 can be formed ontop surface 152 b ofconductive structure 152. -
External interconnects 160 can be electrically connected totop surface 152 b ofconductive structure 152.External interconnects 160 can be electrically connected toelectronic component 110 or toantenna elements 130 throughsubstrate 150.External interconnects 160 can be electrically connected to both ofelectronic component 110 andantenna elements 130 throughconductors 152 x ofsubstrate 150. - In some examples,
external interconnects 160 can comprise tin (Sn), silver (Ag), lead (Pb), copper (Cu), Sn—Pb, Sn37-Pb, Sn95-Pb, Sn—Pb—Ag, Sn—Cu, Sn—Ag, Sn—Au, Sn—Bi, or Sn—Ag—Cu.External interconnects 160 can be formed using, for example, a ball drop process, a screen printing process or an electroplating process. For example,external interconnects 160 can be formed by preparing a conductive material containing a solder ontop surface 152 b ofconductive structure 152 ofsubstrate 150 using a ball drop process, followed by a reflow process.External interconnects 160 can comprise or be referred to as conductive balls, such as solder balls, conductive pillars, such as copper pillars, or conductive posts having solder caps on copper pillars.External interconnects 160 can have a size in the range from approximately 0.01 mm to approximately 1 mm. Completedsemiconductor device 100 can be flipped, so thatexternal interconnects 160 are positioned on bottom surface 100 y ofsemiconductor device 100. - The method presented throughout
FIG. 2 can be used to finalize different semiconductor devices, such as those corresponding to the arrangements ofFIGS. 4-6 . For example,FIG. 6A shows a top view ofsemiconductor device 1006.FIGS. 6B-6F show side cross-sectional views ofsemiconductor device 1006 alongdifferent antenna elements -
FIG. 6A shows several antenna elements are shown coupled withsubstrate 150 at substrate portions defined aroundfootprint 119 ofelectronic component 110 or around a center of the antenna elements arrangement, such substrate portions shown divided by dotted lines.Antenna element 330 x 1 is shown coupled to substrate leftwardportion 156,antenna element 330 x 2 is shown coupled to substrate rightwardportion 157,antenna element 330y 1 is shown coupled to substrate rightwardportion 157,antenna element 330 y 2 is shown coupled to substrate leftwardportion 156, antenna element 430z 1 is shown coupled to substrateupward portion 158, and antenna element 430 z 2 is shown coupled to substratedownward portion 159. -
Substrate 150 comprises a substrate dielectric structure having one or more dielectric layers, such asdielectric layers top side 154 andsubstrate bottom side 155.Substrate 150 also comprises substrateconductive structure 152 comprising one or more conductors, conductive layers, pads, vias, or traces, that traverse the substrate dielectric structure horizontally or vertically. Substrateconductive structure 152 can comprisesubstrate terminal 1521, and can comprisesubstrate terminal 1522 exposed atsubstrate top side 154. In some examples,substrate terminals -
Electronic component 110 can be coupled tosubstrate 150 and can comprisecomponent terminal 115 coupled tosubstrate terminal 1521. In some examples,component terminals 115 can comprise or be referred to as pads, bumps, or pillars. In some examples,component side 117 ofelectronic component 110 can directly contactsubstrate top side 154. In some examples, such as whencomponent terminal 115 comprises a bump or pillar,component side 117 ofelectronic component 110 can be distanced from substrate top side by a gap defined by height ofcomponent terminal 115. - In some examples,
footprint 119 shown inFIG. 6A can represent the area ofsubstrate 150 covered byelectronic component 110, whetherelectronic component 110 is coupled tosubstrate top side 154 as shown and described for example with respect toFIGS. 1-2 , or whetherelectronic component 110 is coupled tosubstrate bottom side 155 as shown and described for example further below with respect to corresponding elements inFIGS. 11-16 . -
Semiconductor device 1006 can comprise one or more passive components coupled tosubstrate 150. In some examples, the passive components can be similar in terms of features or location to thepassive components FIGS. 7-10 orFIGS. 14-16 . In some examples, one or more of the passive components can be coupled tosubstrate 150 at least partially withinfootprint 119 ofelectronic component 110, whether such passive component is onsubstrate bottom side 155 andelectronic component 110 is onsubstrate top side 154, or whether such passive component is onsubstrate top side 154 andelectronic component 110 is onsubstrate bottom side 155. In some examples one or more of the passive components can be coupled to substrateupward portion 158, whether atsubstrate top side 154 orsubstrate bottom side 155, betweenantenna element 330 x 1 andantenna element 330y 1, adjacent to antenna element 430z 1, or adjacentelectronic component 110. In some examples one or more of the passive components can be coupled to substratedownward portion 159, whether atsubstrate top side 154 orsubstrate bottom side 155, betweenantenna element 330 y 2 andantenna element 330 x 2, adjacent to antenna element 430 z 2, or adjacentelectronic component 110. In some examples one or more of the passive components can be coupled to substrate leftwardportion 156, whether atsubstrate top side 154 orsubstrate bottom side 155, between antenna element 430z 1 and antenna element 430 z 2, adjacent toantenna element 330 x 1 orantenna element 330 y 2, or adjacentelectronic component 110. In some examples one or more of the passive components can be coupled to substrate rightwardportion 157, whether atsubstrate top side 154 orsubstrate bottom side 155, between antenna element 430z 1 and antenna element 430 z 2, adjacent toantenna element 330y 1 orantenna element 330 x 2, or adjacentelectronic component 110. -
Antenna elements semiconductor device 1006, and inward vertical surfaces opposite the outward vertical surfaces. Depending on the antenna element, such outward vertical surfaces can correspond toelement head side 135 orelement sidewall 136, and such inward vertical surfaces can correspond toelement base side 137 orelement sidewall 136.Semiconductor device 1006 can compriseencapsulant 140 onsubstrate top side 154. In some examples,encapsulant 140 can cover the inward vertical surfaces ofantenna elements encapsulant 140 can cover the outward vertical surfaces ofantenna elements encapsulant 140 leave the outward vertical surfaces ofantenna elements Encapsulant 140 can also covercomponent sidewall 116 orcomponent side 115 ofelectronic component 110. In some examples,shield structure 112 can covercomponent sidewall 116 andcomponent side 115, andencapsulant 140 can in turncover shield structure 112adjacent component sidewall 116 oradjacent component side 115. In some examples,encapsulant 140 can leave exposedshield structure 112adjacent component side 115. - The cross-section presented in
FIG. 6B corresponds to line 6B-6B ofFIG. 6A and showsantenna element 330 x 1 andantenna element 330 x 2 coupled tosubstrate 150outside component footprint 119 ofelectronic component 110.Antenna element 330 x 1 orantenna element 330 x 2 can be similar toantenna element 130 previously described.Antenna element 330 x 1 can be similar toantenna element 330 x 2, but can be coupled opposite each other. The arrangement, orientation, or features ofantenna elements 330y antenna elements 130 inFIGS. 1-3 . - As an example,
antenna element 330 x 2 comprises elementdielectric structure 131 comprising one or more dielectric layers,antenna pattern 134 coupled to elementdielectric structure 131, andelement terminal 132 coupled tosubstrate terminal 1522.Element terminal 132 can be part ofconductive structure 133, which provides a conductive path or antenna path comprising one or more traces or vias that traverse elementdielectric structure 131 forcoupling antenna pattern 134 toelement terminal 132.Antenna element 330 x 1 also compriseselement head side 135adjacent antenna pattern 134,element base side 137 oppositeelement head side 135, andelement sidewall 136 betweenelement head side 135 andelement base side 137. In some examples,antenna pattern 134 can be exposed at or throughelement head side 134 for outbound or inbound wireless communications. In the present example,element terminal 132 is exposed atelement base side 137, andantenna pattern 134 is coupled tosubstrate 150 throughelement terminal 132 andsubstrate terminal 1522. Substrateconductive structure 152couples antenna element 330 x 2 toelectronic component 110, providing a conductive path betweenelement terminal 132 andcomponent terminal 115. -
Antenna pattern 134 can be configured or oriented to send or receive wireless communications along a direction substantially orthogonal toantenna head side 135 orantenna pattern 134. Forantenna element 330 x 2,element head side 135 faces topward vertical direction, withantenna pattern 134 oriented for communication along such vertical direction, and withelement base side 137 coupled tosubstrate 150. Similarly in the present example,antenna element 330 x 1 compriseselement head side 135 facing topward vertical direction, withantenna pattern 134 oriented for communication along such vertical direction and withelement base side 137 coupled tosubstrate 150. In some examples encapsulant 140 can coverelement head side 135 orantenna pattern 134. In some examples,encapsulant 140 can be applied, orantenna element 330 x 1 orantenna element 330 x 2 can be positioned, such thatelement head side 135 orantenna pattern 134 remain exposed fromencapsulant 140. - There can be examples, however, where one or both of
antenna element 330 x 1 orantenna element 330 x 2 can be oriented such thatantenna head side 135 faces a horizontal direction, for communication along such horizontal direction. In such examples,element sidewall 136 can be coupled tosubstrate 150, orelement terminal 132 can be exposed atelement sidewall 137 and coupled tosubstrate terminal 1522. There can be examples, where one ofantenna element 330 x 1 orantenna element 330 x 2 can be oriented for topward vertical communication as described above, and where another one ofantenna element 330 x 1 orantenna element 330 x 2 can be oriented such thatantenna head side 135 faces a bottomward vertical direction for communication along such vertical direction. - The cross-section presented in
FIG. 6C corresponds to line 6C-6C ofFIG. 6A and showsantenna element 330y 1 andantenna element 330 y 2 coupled tosubstrate 150outside component footprint 119 ofelectronic component 110.Antenna element 330y 1 orantenna element 330 y 2 can be similar toantenna element 130 previously described.Antenna element 330y 1 can be similar toantenna element 330 y 2, but can be coupled opposite each other. The arrangement, orientation, or features ofantenna elements 330y antenna elements 230 inFIG. 4 . - In the view of
FIG. 6C ,antenna element 330y 1 compriseselement head side 135 facing rightward horizontal direction, withantenna pattern 134 oriented for communication along such rightward horizontal direction, and withelement sidewall 136 coupled tosubstrate 150.Antenna element 330 y 2 compriseselement head side 135 facing leftward horizontal direction, withantenna pattern 134 oriented for communication along such leftward horizontal direction, and withelement sidewall 136 coupled tosubstrate 150. In some examples encapsulant 140 can coverelement head side 135 orantenna pattern 134. In some examples encapsulant 140 can coverelement head side 135 orantenna pattern 134. In some examples,encapsulant 140 can be applied, orantenna element 330y 1 orantenna element 330 y 2 can be positioned, such thatelement head side 135 orantenna pattern 134 remain exposed fromencapsulant 140. - The cross-section shown in
FIG. 6D corresponds to line 6D-6D ofFIG. 6A and showsantenna element 330 x 1 andantenna element 330y 1 coupled tosubstrate 150outside component footprint 119 ofelectronic component 110.Antenna element 330 x 1 orantenna element 330y 1 can be similar toantenna element 130 previously described.Antenna element 330 x 1 can be similar toantenna element 330y 1, but can be coupled opposite each other or in a different orientation. - In the view of
FIG. 6D ,antenna element 330 x 1 compriseselement head side 135 facing topward vertical direction, withantenna pattern 134 oriented for communication along such topward vertical direction, and withelement base side 137 coupled tosubstrate 150.Antenna element 330y 1 compriseselement head side 135 facing rightward horizontal direction, withantenna pattern 134 oriented for communication along such rightward horizontal direction, and withelement sidewall 136 coupled tosubstrate 150. In some examples encapsulant 140 can coverelement head side 135 orantenna pattern 134. In some examples,encapsulant 140 can be applied, orantenna element 330 x 1 orantenna element 330y 1 can be positioned, such thatelement head side 135 orantenna pattern 134 remain exposed fromencapsulant 140. - The cross-section shown in
FIG. 6E corresponds to line 6E-6E ofFIG. 6A and showsantenna element 330 y 2 andantenna element 330 x 2 coupled tosubstrate 150outside component footprint 119 ofelectronic component 110.Antenna element 330 y 2 orantenna element 330 x 2 can be similar toantenna element 130 previously described.Antenna element 330 x 2 can be similar toantenna element 330 y 2, but can be coupled opposite each other or in a different orientation. - In the view of
FIG. 6E ,antenna element 330 y 2 compriseselement head side 135 facing leftward horizontal direction, withantenna pattern 134 oriented for communication along such leftward horizontal direction, and withelement sidewall 136 coupled tosubstrate 150.Antenna element 330 x 2 compriseselement head side 135 facing topward vertical direction, withantenna pattern 134 oriented for communication along such topward vertical direction, and withelement base side 137 coupled tosubstrate 150. In some examples encapsulant 140 can coverelement head side 135 orantenna pattern 134. In some examples,encapsulant 140 can be applied, orantenna element 330 y 2 orantenna element 330 x 2 can be positioned, such thatelement head side 135 orantenna pattern 134 remain exposed fromencapsulant 140. - The cross-section shown in
FIG. 6F corresponds to line 6F-6F ofFIG. 6A and shows antenna element 430z 1 and antenna element 430 z 2 coupled tosubstrate 150outside component footprint 119 ofelectronic component 110. Antenna element 430z 1 or antenna element 430 z 2 can be similar toantenna element 130 previously described. Antenna element 430z 1 can be similar to antenna element 430 z 2, but can be coupled opposite each other or in a different orientation. - In the view of
FIG. 6F , antenna element 430z 1 compriseselement head side 135 facing upward horizontal direction, withantenna pattern 134 oriented for communication along such upward horizontal direction, and withelement sidewall 136 coupled tosubstrate 150. Antenna element 430 z 2 compriseselement head side 135 facing downward vertical direction, withantenna pattern 134 oriented for communication along such downward vertical direction, and withelement base side 137 coupled tosubstrate 150. In some examples encapsulant 140 can coverelement head side 135 orantenna pattern 134. In some examples,encapsulant 140 can be applied, or antenna element 430z 1 or antenna element 430 z 2 can be positioned, such thatelement head side 135 orantenna pattern 134 remain exposed fromencapsulant 140. -
FIGS. 7A to 7D show a transmission plan view of an example semiconductor device, a cross-sectional view taken along theline 7B-7B ofFIG. 7A , a cross-sectional view taken along theline 7C-7C ofFIG. 7A , and a cross-sectional view taken along theline 7D-7D ofFIG. 7A . - In the example shown in
FIGS. 7A to 7D ,semiconductor device 500 can compriseelectronic component 110,passive component 520,antenna elements 130,encapsulant 540,substrate 550, andexternal interconnects 160. -
Electronic component 110,antenna elements 130 andexternal interconnects 160 can be similar to elements ofsemiconductor device 100 shown inFIG. 1 .Passive component 520 can compriseterminals 521.Substrate 550 can comprisedielectric structures conductive structure 552. -
Antenna elements 130,encapsulant 540,substrate 550 andexternal interconnects 160 can comprise or be referred to assemiconductor package 501 orpackage 501, and can protectelectronic component 110 andpassive component 520 from external elements or environmental exposure.Semiconductor package 501 can provide electrical coupling between an external element andelectronic component 110 and between the external element andpassive component 520. -
FIGS. 8A to 8F show cross-sectional views of an example method for manufacturing anexample semiconductor device 500.FIGS. 9A to 9F show cross-sectional views of an example method for manufacturingexample semiconductor device 500 shown inFIGS. 8A to 8F .FIGS. 10A and 10B show plan views of an example method for manufacturingexample semiconductor device 500 shown inFIGS. 8A and 8B . Specifically, among cross-sectional views of an example method for manufacturing anexample semiconductor device 500,FIGS. 8A to 8F show cross-sectional views taken along theline 7C-7C ofFIG. 7A , andFIGS. 9A to 9F show cross-sectional views taken along theline 7D-7D ofFIG. 7A . Specifically, cross-sectional views taken along theline 7B-7B ofFIG. 7A can be the similar as those shown inFIGS. 2C to 2J . -
FIGS. 8A, 9A and 10A showsemiconductor device 500 at an early stage of manufacture. - In the example shown in
FIGS. 8A, 9A and 10A ,semiconductor device 500 can be prepared.Semiconductor device 500 shown inFIGS. 8A, 9A and 10A can be similar tosemiconductor device 100 manufactured by example method for manufacturingsemiconductor device 100 shown inFIGS. 2A to 2C andFIG. 3 . -
FIGS. 8B, 9B and 10B show semiconductor device 500 at a later stage of manufacture. In the example shown inFIGS. 8B, 9B and 10B ,bottom surface 520 b ofpassive component 520 can be adhered to a surface oftemporary bond layer 11 ofcarrier 10.Passive component 520 can be adhered tocarrier 10 so as to be positioned at opposite sides ofelectronic component 110 along first direction x.Passive component 520 can be arranged on and adhered ontotemporary bond layer 11 ofcarrier 10 in a matrix configuration having rows or columns so as to be positioned betweenantenna elements 130 spaced apart from each other in second direction y.Terminals 521 ofpassive component 520 can be adhered totemporary bond layer 11. - In some examples, pick-and-place equipment can pick up and place
passive component 520 ontemporary bond layer 11 ofcarrier 10 and can be adhered totemporary bond layer 11. Bottom surface ofpassive component 520 can be adhered totemporary bond layer 11.Passive component 520 can compriseterminals 521 exposed to its bottom surface.Terminals 521 can be adhered totemporary bond layer 11 ofcarrier 10.Terminals 521 can be input/output terminals ofpassive component 520. - In some examples,
passive component 520 can comprise at least one of a resistor, a capacitor, an inductor, a connector, and equivalents.Passive component 520 can have an overall thickness in the range from approximately 0.01 mm to approximately 2 mm. -
Antenna elements 130 can be varied by employing the layouts ofantenna elements FIGS. 2C, 3, 4A, 4B, 5A to 5C, and 6A to 6D . Alternatively,antenna elements 130 can be varied by arbitrarily arranging vertical antennas or horizontal antennas in various manners. Here,passive component 520 can be varied in view of layout so as to be arranged within surface oftemporary bond layer 11 ofcarrier 10 in various manners by employing the layouts ofantenna elements -
FIGS. 8C and 9C showsemiconductor device 500 at a later stage of manufacture. In the example shown inFIGS. 8C and 9C ,encapsulant 540 can covercarrier 10,electronic component 110,passive component 520 andantenna elements 130. In some examples,encapsulant 540 can be brought into contact with top surface oftemporary bond layer 11 ofcarrier 10, outer surface ofEMI shield 112, top and side surfaces ofpassive component 520, and side surfaces ofantenna elements 130. Here,antenna patterns 134 ofantenna elements 130 can be exposed.Encapsulant 540 can be similar to, and can be similarly formed asencapsulant 140. -
FIGS. 8D and 9D show semiconductor device 500 at a later stage of manufacture. In the example shown inFIGS. 8D and 9D ,semiconductor device 500 can be flipped to removecarrier 10 in a state in whichcarrier 10 is positioned onelectronic component 110,passive component 520,antenna elements 130, andencapsulant 540. -
Carrier 10 can be removed fromtop surface 110 b ofelectronic component 110,top surface 520 b ofpassive component 520,top surfaces 130 b ofantenna elements 130, andtop surface 540 b ofencapsulant 540. Accordingly,top surface 110 b ofelectronic component 110,top surface 520 b ofpassive component 520,top surfaces 130 b ofantenna elements 130, andtop surface 540 b ofencapsulant 540, can be exposed. Internal interconnects 111 ofelectronic component 110,terminals 521 ofpassive component 520, andconductive terminals 132 ofantenna elements 130, can also be exposed. Removing ofcarrier 10 can be similar to removing ofcarrier 10 shown inFIG. 2E . -
FIGS. 8E and 9E showsemiconductor device 500 at a later stage of manufacture. In the example shown inFIGS. 8E and 9E ,substrate 550 can be formed ontop surface 110 b ofelectronic component 110,top surface 520 b ofpassive component 520,top surfaces 130 b ofantenna elements 130, andtop surface 540 b ofencapsulant 540. In some examples,substrate 550 can be similar tosubstrate 150, or can comprise or be referred to as a substrate.Substrate 550 can comprisedielectric structure 551,conductive structure 552 anddielectric structure 553, and are sequentially formed in that order. -
Dielectric structure 551 can be first formed onsubstrate 550 to covertop surface 110 b ofelectronic component 110,top surface 520 b ofpassive component 520,top surfaces 130 b ofantenna elements 130, andtop surface 540 b ofencapsulant 540 to a uniform thickness.Apertures internal interconnects 111 ofelectronic component 110,conductive terminals 132 ofantenna elements 130 andterminals 521 ofpassive component 520, respectively, can be formed indielectric structure 551.Dielectric structure 551 can expose top surfaces ofinternal interconnects 111 ofelectronic component 110 throughapertures 551 x, top surfaces ofconductive terminals 132 ofantenna elements 130 throughapertures 551 y, and top surfaces ofterminals 521 ofpassive component 520 throughapertures 551 z, respectively.Dielectric structure 551 can be similar to, and can be similarly formed asdielectric structure 151. -
Conductive structure 552 can coverinternal interconnects 111 ofelectronic component 110,conductive terminals 132 ofantenna elements 130 andterminals 521 ofpassive component 520, and are exposed through top surface ofdielectric structure 551 andapertures -
Conductive structure 552 can be formed to have multiple patterns, and are brought into contact withinterconnects 111 ofelectronic component 110,conductive terminals 132 ofantenna elements 130 andterminals 521 ofpassive component 520, and are exposed throughapertures Conductive structure 552 can comprise traces 552 x electrically connectinginternal interconnects 111 ofelectronic component 110 andterminals 521 ofpassive component 520 with each other. Trace 552 x can extend from a point overelectronic component 110 to a point overpassive component 520 to electrically connectinternal interconnects 111 ofelectronic component 110 andconductive terminals 132 ofantenna elements 130 with each other, likepassive component 520. Trace 552 x can also electrically connectinternal interconnects 111 ofelectronic component 110 withconductive terminals 132 ofantenna elements 130, likeconductive structure 152 shown inFIG. 2G .Conductive structure 552 can be similar to, and can be similarly formed asconductive structure 152. -
Dielectric structure 553 can coverdielectric structure 551 andconductive structure 552 to a uniform thickness.Aperture 553 x exposingtop surface 552 b ofconductive structure 552 can be formed indielectric structure 553.Dielectric structure 553 can also expose top surfaces oftraces 552 y throughapertures 553 x.Dielectric structure 553 can be similar to, and can be similarly formed as,dielectric structure 151. - Although only two
dielectric structures conductive structure 552 are shown insubstrate 550, this is not a limitation of the present disclosure. In some examples, the number of structures that make upsubstrate 550 can be smaller or greater than that shown in the present disclosure. -
FIGS. 8F and 9F showsemiconductor device 500 at a later stage of manufacture. In the example shown inFIGS. 8F and 9F ,external interconnects 160 can be formed ontop surface 552 b ofconductive structure 552. -
External interconnects 160 can be electrically connected totop surface 552 b ofconductive structure 552.External interconnects 160 can be electrically connected toelectronic component 110,passive component 520 orantenna elements 130 throughsubstrate 150.External interconnects 160 can be electrically connected to both ofelectronic component 110 andantenna elements 130 throughconductors 152 x, or can be electrically connected to both ofelectronic component 110 andpassive component 520.External interconnects 160 can be similar to, and can be similarly formed asexternal interconnects 160 ofsemiconductor device 100. -
FIG. 11 shows a cross-sectional view of anexample semiconductor device 600. In the example shown inFIG. 11 ,semiconductor device 600 can compriseelectronic component 610,antenna elements 630,encapsulant 640,substrate 650, andexternal interconnects 660. -
Electronic component 610 can compriseinternal interconnects 611.Antenna elements 630 can comprisedielectric structure 631,conductive structures antenna patterns 634.Substrate 650 can comprisedielectric structures conductive structure 652. -
Antenna elements 630,encapsulant 640,substrate 650 andexternal interconnects 660 can comprise or be referred to assemiconductor package 601 orpackage 601, and can protectelectronic component 610 from external elements or environmental exposure. -
FIGS. 12A to 12F show cross-sectional views of an example method for manufacturing anexample semiconductor device 600.FIG. 13 shows a plan view of an example method for manufacturingexample semiconductor device 600 shown inFIG. 12A . -
FIGS. 12A and 13 show semiconductor device 600 at an early stage of manufacture. In the example shown inFIGS. 12A and 13 , bottom surfaces 630 b ofantenna elements 630 can be adhered totemporary bond layer 11 provided oncarrier 10. - In some examples, pick-and-place equipment can pick up and
place antenna elements 630 on a surface oftemporary bond layer 11 ofcarrier 10 and can be adhered totemporary bond layer 11. In some examples, twoantenna elements 630 can be adhered ontocarrier 10 so as to be positioned at opposite sides along second direction y. Twoantenna elements 630 can be arranged such thatinner surfaces 630 c of twoantenna elements 630 face each other and can be spaced apart from each other. Each ofantenna elements 630 can lengthwise extend along first direction x.Antenna elements 630 can be similar to, and can be similarly formed asantenna elements 130.Antenna elements 630 can be varied by employing the layouts ofantenna elements 230, 330 and 430 shown inFIGS. 3, 4A, 4B, 5A to 5C and 6A to 6D . Alternatively,antenna elements 630 can be varied by arbitrarily arranging vertical antennas or horizontal antennas in various manners. -
FIG. 12B showssemiconductor device 600 at a later stage of manufacture. In the example shown inFIG. 12 ,encapsulant 640 can covercarrier 10 andantenna elements 630. In some examples,encapsulant 640 can contact top surface oftemporary bond layer 11 ofcarrier 10 and side surfaces ofantenna elements 630. Here,antenna patterns 634 ofantenna elements 630 can be exposed.Encapsulant 640 can be similar to, and can be similarly formed asencapsulant 140. -
FIG. 12C showssemiconductor device 600 at a later stage of manufacture. In the example shown inFIG. 12C ,semiconductor device 600 can be flipped to removecarrier 10 in a state in whichcarrier 10 is positioned onantenna elements 630 andencapsulant 640. -
Carrier 10 can be removed fromtop surfaces 630 b ofantenna elements 630 andtop surface 640 b ofencapsulant 640. Accordingly,top surfaces 630 b ofantenna elements 630 andtop surface 640 b ofencapsulant 640 can be exposed.Conductive patterns 632 ofantenna elements 630 can also be exposed. Removing ofcarrier 10 can be similar to removing ofcarrier 10 shown inFIG. 2E . -
FIG. 12D showssemiconductor device 600 at a later stage of manufacture. In the example shown inFIG. 12D ,substrate 650 can be formed ontop surfaces 630 b ofantenna elements 630 andtop surface 640 b ofencapsulant 640. In some examples,substrate 650 can be similar tosubstrate 150, or can comprise or be referred to as a substrate.Substrate 650 can comprisedielectric structure 651,conductive structure 652 anddielectric structure 653, and are sequentially formed in that order. -
Dielectric structure 651 can covertop surfaces 630 b ofantenna elements 630 andtop surface 640 b ofencapsulant 640 to a uniform thickness.Apertures 651 x exposingconductive patterns 632 ofantenna elements 630 can be formed indielectric structure 651.Dielectric structure 651 can expose top surfaces ofconductive patterns 632 ofantenna elements 630 throughapertures 651 x.Dielectric structure 651 can be similar to, and can be similarly formed asdielectric structure 151. -
Conductive structure 652 can cover top surface ofdielectric structure 651 andconductive patterns 632 ofantenna elements 630 exposed throughapertures 651 x.Conductive structure 652 can have multiple patterns, and are brought into contact withconductive patterns 632 ofantenna elements 630, exposed throughapertures 651 x, respectively, and can be electrically connected.Conductive structure 652 can be electrically connected toconductive patterns 632 ofantenna elements 630 and can comprisetraces 652 x extending alongtop surface 640 b ofencapsulant 640.Conductive structure 652 can be similar to, and can be similarly formed asconductive structure 152. -
Dielectric structure 653 can coverdielectric structure 651 andconductive structure 652 to a uniform thickness.Apertures 653 x exposingtop surface 652 b ofconductive structure 652 can be formed indielectric structure 653.Dielectric structure 653 can also expose top surfaces oftraces 652 x throughapertures 653 x.Dielectric structure 653 can be similar to, and can be similarly formed asdielectric structure 651. - Although only two
dielectric structures conductive structure 652 are shown insubstrate 650, this is not a limitation of the present disclosure. In some examples, the number of structures that make upsubstrate 650 can be smaller or greater than that shown in the present disclosure. -
FIG. 12E showssemiconductor device 600 at a later stage of manufacture. In the example shown inFIG. 12E ,internal interconnects 611 ofelectronic component 610 can be electrically connected totop surface 652 b ofconductive structure 652.Electronic component 610 can be positioned at the center ofsubstrate 650. - In some examples, pick-and-place equipment can pick up and place
electronic components 610 ontraces 652 x ofconductive structure 652 ofsubstrate 650. Subsequently,electronic component 610 can be electrically connected toconductive structure 652 ofsubstrate 650 using a mass reflow process, a thermal compression process or a film assist bonding process.Electronic component 610 can be electrically connected toantenna elements 630 throughconductive structure 652 ofsubstrate 650. - In some examples,
electronic component 610 can comprise an active region and a non-active region. In some examples, active region can be formed to facesubstrate 650. In some examples, active region can compriseinternal interconnects 611. In some examples,internal interconnects 611 can comprise or be referred to as die pads, bond pads, aluminum pads, conductive pillars or conductive posts. - Internal interconnects 611 can be connected to
conductive structure 652 ofsubstrate 650 using lowmelting point material 612. In some examples, lowmelting point material 612 can comprise one selected from the group consisting of Sn, Ag, Pb, Cu, Sn—Pb, Sn37-Pb, Sn95-Pb, Sn—Pb—Ag, Sn—Cu, Sn—Ag, Sn—Au, Sn—Bi, Sn—Ag—Cu, and equivalents. Internal interconnects 611 ofelectronic component 610 andconductive structure 652 ofsubstrate 650 can be electrically connected to each other by such lowmelting point material 612.Electronic component 610 can have an overall thickness in the range from approximately 0.1 mm to approximately 1 mm. -
FIG. 12F showssemiconductor device 600 at a later stage of manufacture. In the example shown inFIG. 12F ,external interconnects 660 are formed ontop surface 652 b ofconductive structure 652.External interconnects 660 can be electrically connected totop surface 652 b ofconductive structure 652. -
External interconnects 660 can be arranged at exterior sides ofelectronic component 610 to be spaced apart from each other in a matrix configuration having rows or columns.External interconnects 660 can be electrically connected toelectronic component 610 orantenna elements 630 throughsubstrate 650.External interconnects 660 can be electrically connected to both ofelectronic component 610 andantenna elements 630 throughtraces 652 x.External interconnects 660 can be similar to, and can be similarly formed asexternal interconnects 160. -
FIG. 14 shows a cross-sectional view of anexample semiconductor device 700. In the example shown inFIG. 14 ,semiconductor device 700 can compriseelectronic component 710,passive component 720,antenna elements 630,encapsulant 740,substrate 750, andexternal interconnects 760. -
Electronic component 710 can compriseinternal interconnects 711.Passive component 720 can compriseterminals 721.Antenna elements 630 can comprisedielectric structure 631,conductive structures antenna patterns 634.Substrate 750 can comprisedielectric structures conductive structure 752. -
Antenna elements 630,encapsulant 740,substrate 750 andexternal interconnects 760 can comprise or be referred to assemiconductor package 701 orpackage 701, and can protectelectronic component 710 from external elements or environmental exposure.Semiconductor package 701 can provide electrical coupling between an external element andelectronic component 710. -
FIGS. 15A to 15G show cross-sectional views of an example method for manufacturing anexample semiconductor device 700.FIGS. 16A and 16B show plan views of an example method for manufacturingexample semiconductor device 700 shown inFIGS. 15A and 15B . -
FIGS. 15A and 16A showsemiconductor device 700 at an early stage of manufacture. In the example shown inFIGS. 15A and 16A ,semiconductor device 700 can be prepared.Semiconductor device 700 shown inFIGS. 15A and 16A can be the similar withsemiconductor device 600 manufactured by example method shown inFIGS. 12A and 13 . -
FIG. 15B showssemiconductor device 700 at a later stage of manufacture. In the example shown inFIG. 15B ,bottom surface 720 b ofpassive component 720 can be adhered to a surface oftemporary bond layer 11 ofcarrier 10.Passive component 720 can be positioned between interior side surfaces 630 c of two spaced-apartantenna elements 630.Passive component 720 can be arranged ontemporary bond layer 11 ofcarrier 10 to be spaced apart from each other in a matrix configuration having rows or columns so as to be positioned between twoantenna elements 630 spaced apart from each other in second direction y and can be adhered totemporary bond layer 11 ofcarrier 10.Terminals 721 ofpassive component 720 can also be adhered totemporary bond layer 11.Passive component 720 can be similar to, and can be similarly formed aspassive component 520. -
FIG. 15C showssemiconductor device 700 at a later stage of manufacture. In the example shown inFIG. 15C ,encapsulant 740 can covercarrier 10,passive component 720, andantenna elements 630. In some examples,encapsulant 740 can be brought into contact with top surface oftemporary bond layer 11 ofcarrier 10, top and side surfaces ofpassive component 720 and side surfaces ofantenna elements 630. Here,antenna patterns 634 ofantenna elements 630 can be exposed.Encapsulant 740 can be similar to, and can be similarly formed asencapsulant 140. -
FIG. 15D showssemiconductor device 700 at a later stage of manufacture. In the example shown inFIG. 15D ,semiconductor device 700 can be flipped to removecarrier 10 in a state in whichcarrier 10 is positioned onantenna elements 630 andencapsulant 740. -
Carrier 10 can be removed fromtop surfaces 630 b ofantenna elements 630,top surface 720 b ofpassive component 720 and top surface 740 b ofencapsulant 740. Accordingly,top surfaces 630 b ofantenna elements 630,top surface 720 b ofpassive component 720 and top surface 740 b ofencapsulant 740 can also be exposed.Terminals 721 ofpassive component 720 andconductive patterns 632 ofantenna elements 630 can also be exposed. Removing ofcarrier 10 can be similar to removing ofcarrier 10 shown inFIG. 2E . -
FIG. 15E showssemiconductor device 700 at a later stage of manufacture. In the example shown inFIG. 15E ,substrate 750 can be formed ontop surfaces 630 b ofantenna elements 630 and top surface 740 b ofencapsulant 740. In some examples,substrate 650 can be similar tosubstrate 150, or can comprise or be referred to as a substrate.Substrate 750 can comprisedielectric structure 751,conductive structure 752 anddielectric structure 753, and are sequentially formed in that order. -
Dielectric structure 751 can covertop surfaces 630 b ofantenna elements 630,top surface 720 b ofpassive component 720 and top surface 740 b ofencapsulant 740 to a uniform thickness.Apertures conductive patterns 632 ofantenna elements 630 andterminals 721 ofpassive component 720 can be formed indielectric structure 751.Dielectric structure 751 can also exposeconductive patterns 632 ofantenna elements 630 andterminals 721 ofpassive component 720 throughapertures Dielectric structure 751 can be similar to, and can be similarly formed asdielectric structure 151. -
Conductive structure 752 can cover top surface ofdielectric structure 751,conductive patterns 632 ofantenna elements 630 andterminals 721 ofpassive component 720, exposed throughapertures Conductive structure 752 can have multiple patterns, and are brought into contact withconductive patterns 632 ofantenna elements 630 andterminals 721 ofpassive component 720, exposed throughapertures Conductive structure 752 can be electrically connected toterminals 721 ofpassive component 720 and can comprisetraces 752 y extending along top surface 740 b ofencapsulant 740.Traces 752 y can be electrically connected toconductive patterns 632 ofantenna elements 630, like inconductive structure 652 shown inFIG. 12D , and can extend along top surface 740 b ofencapsulant 740.Conductive structure 752 can be similar to, and can be similarly formed asconductive structure 152. -
Dielectric structure 753 can coverdielectric structure 751 andconductive structure 752 to a uniform thickness.Apertures 753 x exposing top surface 752 b ofconductive structure 752 can be formed indielectric structure 753.Dielectric structure 753 can also expose top surfaces oftraces 752 y throughapertures 753 x.dielectric structure 753 can be similar to, and can be similarly formed as,dielectric structure 751. - Although only two
dielectric structures conductive structure 752 are shown insubstrate 750, this is not a limitation of the present disclosure. In some examples, the number of structures that make upsubstrate 750 can be smaller or greater than that shown in the present disclosure. -
FIG. 15F showssemiconductor device 700 at a later stage of manufacture. In the example shown inFIG. 15F ,internal interconnects 711 ofelectronic component 710 can be electrically connected to top surface 752 b ofconductive structure 752.Electronic component 710 can be positioned at the center ofsubstrate 750.Electronic component 710 can be positioned ontraces 752 y to be electrically connected toconductive structure 752.Electronic component 710 can be electrically connected topassive component 720 or antenna elements 730 throughsubstrate 750.Electronic component 710 can be similar to, and can be similarly formed aselectronic component 610. -
FIG. 15G showssemiconductor device 700 at a later stage of manufacture. In the example shown inFIG. 15G ,external interconnects 760 can be formed on top surface 752 b ofconductive structure 752.External interconnects 760 can be electrically connected to top surface 752 b ofconductive structure 752. -
External interconnects 760 can be formed at exterior sides ofelectronic component 710 to be spaced apart from each other in a matrix configuration having rows or columns.External interconnects 760 can be electrically connected toelectronic component 710,passive component 720 or antenna elements 730 throughsubstrate 750.External interconnects 760 can be electrically connected to both ofelectronic component 710 andpassive component 720 throughtraces 752 y, or to both ofelectronic component 710 andantenna elements 630.External interconnects 760 can be similar to, and can be similarly formed asexternal interconnects 160. - The present disclosure includes reference to certain examples, however, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the disclosure. In addition, modifications may be made to the disclosed examples without departing from the scope of the present disclosure. Therefore, it is intended that the present disclosure not be limited to the examples disclosed, but that the disclosure will include all examples falling within the scope of the appended claims.
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