US20240032372A1 - Display Apparatus, Display Module, and Electronic Device - Google Patents

Display Apparatus, Display Module, and Electronic Device Download PDF

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Publication number
US20240032372A1
US20240032372A1 US18/222,169 US202318222169A US2024032372A1 US 20240032372 A1 US20240032372 A1 US 20240032372A1 US 202318222169 A US202318222169 A US 202318222169A US 2024032372 A1 US2024032372 A1 US 2024032372A1
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Prior art keywords
light
layer
emitting device
pixel
display apparatus
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US18/222,169
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English (en)
Inventor
Hajime Kimura
Kunio Kimura
Takuya Kawata
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of US20240032372A1 publication Critical patent/US20240032372A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1637—Details related to the display arrangement, including those related to the mounting of the display in the housing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/82—Interconnections, e.g. terminals

Definitions

  • One embodiment of the present invention relates to a display apparatus, a display module, an electronic device, or a semiconductor device.
  • one embodiment of the present invention is not limited to the above technical field.
  • the technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method.
  • One embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter.
  • Specific examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display apparatus, a light-emitting apparatus, a power storage device, a memory device, a method for driving any of them, and a method for manufacturing any of them.
  • Patent Document 1 One example of known display apparatuses is disclosed in Patent Document 1, which includes a first quantum dot layer that converts a wavelength of light emitted from a first light-emitting element, a second quantum dot layer that converts a wavelength of light emitted from a second light-emitting element, and an optical reduction film that reduces external light entering the first quantum dot layer and the second quantum dot layer and where a blue subpixel is provided with neither a color filter nor a quantum dot layer.
  • An object of one embodiment of the present invention is to provide a novel display apparatus that is highly convenient, useful, or reliable. Another object is to provide a novel display module that is highly convenient, useful, or reliable. Another object of one embodiment of the present invention is to provide a novel electronic device that is highly convenient, useful, or reliable. Another object of one embodiment of the present invention is to provide a novel display apparatus, a novel display module, a novel electronic device, or a novel semiconductor device.
  • One embodiment of the present invention is a display apparatus including a set of pixels.
  • the set of pixels includes a first pixel, a second pixel, a third pixel, and a fourth pixel.
  • the first pixel includes a first light-emitting device and a first layer.
  • the first light-emitting device overlaps with the first layer.
  • the first light-emitting device emits first light toward the first layer.
  • An emission spectrum of the first light has an intensity in a blue-light wavelength range and an intensity in a green-light wavelength range.
  • the first layer is configured to absorb the first light.
  • the first layer contains a color conversion material that converts blue and green light into red light.
  • the second pixel includes a second light-emitting device and a second layer.
  • the second light-emitting device overlaps with the second layer.
  • the second light-emitting device emits second light toward the second layer.
  • An emission spectrum of the second light is the same as the emission spectrum of the first light.
  • the second layer is configured to transmit blue light.
  • the third pixel includes a third light-emitting device and a third layer.
  • the third light-emitting device overlaps with the third layer.
  • the third light-emitting device emits third light toward the third layer.
  • An emission spectrum of the third light is the same as the emission spectrum of the first light.
  • the third layer is configured to absorb blue light and transmit green light.
  • the fourth pixel includes a fourth light-emitting device and a fourth layer.
  • the fourth light-emitting device overlaps with the fourth layer.
  • the fourth light-emitting device emits fourth light toward the fourth layer.
  • An emission spectrum of the fourth light is the same as the emission spectrum of the first light.
  • Another embodiment of the present invention is the above display apparatus where the third layer contains a color conversion material that converts blue light into green light.
  • the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can emit light with the same emission spectrum.
  • structures of the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can be made the same as each other.
  • the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can be formed in the same step. Furthermore, a process of manufacturing the display apparatus can be simplified.
  • the human eye has higher visual sensitivity with respect to green light than that with respect to blue light with high color purity.
  • a spectrum of blue light with high color purity has a narrow full width at half maximum, and a spectrum of light including blue and green light has a wide full width at half maximum.
  • an emission spectrum of a light-emitting substance causing a large Stokes shift for example, an emission spectrum of a phosphorescent substance, has a wide full width at half maximum.
  • a phosphorescent substance has higher emission efficiency than a fluorescent substance.
  • a light-emitting device emitting light including blue and green light has higher emission efficiency than a light-emitting device emitting blue light with high color purity. Furthermore, higher emission efficiency enables power consumption to be reduced.
  • a light-emitting device emitting light including blue and green light has higher reliability than a light-emitting device emitting blue light with high color purity.
  • the reliability can be increased.
  • a novel display apparatus that is highly convenient, useful, or reliable can be provided.
  • the fourth pixel With such a structure of the fourth pixel, display can be performed using light including blue and green light. Furthermore, luminance of the second pixel and the third pixel can be suppressed with use of the fourth pixel. Furthermore, the fourth pixel can utilize light more efficiently than the second pixel and the third pixel. Furthermore, power consumption can be reduced. Furthermore, the reliability can be increased. As a result, a novel display apparatus that is highly convenient, useful, or reliable can be provided.
  • Another embodiment of the present invention is the above display apparatus where the fourth layer is configured to transmit and absorb the fourth light and to convert the absorbed light into red light.
  • Another embodiment of the present invention is the above display apparatus where the fourth layer contains a color conversion material that converts blue and green light into red light.
  • Another embodiment of the present invention is the above display apparatus where the fourth layer contains a color conversion material that converts green light into red light.
  • Another embodiment of the present invention is the above display apparatus where the fourth layer contains a color conversion material that converts blue light into red light and a color conversion material that converts green light into red light.
  • display can be performed using light including blue light, green light, and red light. Furthermore, luminance of the first pixel, the second pixel, and the third pixel can be suppressed with use of the fourth pixel. Furthermore, the reliability can be increased. As a result, a novel display apparatus that is highly convenient, useful, or reliable can be provided.
  • One embodiment of the present invention is a display apparatus including a set of pixels.
  • the set of pixels include a first pixel, a second pixel, a third pixel, and a fourth pixel.
  • the first pixel includes a first light-emitting device and a first layer.
  • the first light-emitting device overlaps with the first layer.
  • the first light-emitting device emits first light toward the first layer.
  • An emission spectrum of the first light has an intensity in a blue-light wavelength range.
  • the first layer is configured to absorb the first light.
  • the first layer contains a color conversion material that converts blue light into red light.
  • the second pixel includes a second light-emitting device and a second layer.
  • the second light-emitting device overlaps with the second layer.
  • the second light-emitting device emits second light toward the second layer.
  • An emission spectrum of the second light is the same as the emission spectrum of the first light.
  • the second layer is configured to transmit blue light.
  • the third pixel includes a third light-emitting device and a third layer.
  • the third light-emitting device overlaps with the third layer.
  • the third light-emitting device emits third light toward the third layer.
  • An emission spectrum of the third light is the same as the emission spectrum of the first light.
  • the third layer is configured to absorb blue light.
  • the third layer contains a color conversion material converting blue light into green light.
  • the fourth pixel includes a fourth light-emitting device and a fourth layer.
  • the fourth light-emitting device overlaps with the fourth layer.
  • the fourth light-emitting device emits fourth light toward the fourth layer.
  • An emission spectrum of the fourth light is the same as the emission spectrum of the first light.
  • the fourth layer is configured to transmit and absorb the fourth light and convert blue light into yellow light.
  • Another embodiment of the present invention is the above display apparatus where the fourth layer contains a color conversion material that converts blue light into yellow light.
  • Another embodiment of the present invention is the above display apparatus where the fourth layer contains a color conversion material that converts blue light into green light and a color conversion material that converts blue light into red light.
  • the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can emit light with the same emission spectrum.
  • structures of the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can be made the same as each other.
  • the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can be formed in the same step. Furthermore, a process of manufacturing the display apparatus can be simplified.
  • display can be performed using light including blue light, green light, and red light. Furthermore, luminance of the first pixel, the second pixel, and the third pixel can be suppressed with use of the fourth pixel. Furthermore, the reliability can be increased. As a result, a novel display apparatus that is highly convenient, useful, or reliable can be provided.
  • Another embodiment of the present invention is a display module including the display apparatus described in any of the above and at least one of a connector and an integrated circuit.
  • Another embodiment of the present invention is an electronic device including the display apparatus described in any of the above and at least one of a battery, a camera, a speaker, and a microphone.
  • the light-emitting apparatus in this specification includes, in its category, an image display apparatus that uses a light-emitting device.
  • the light-emitting apparatus may also include, in its category, a module in which a light-emitting device is provided with a connector such as an anisotropic conductive film or a tape carrier package (TCP), a module in which a printed wiring board is provided at the end of a TCP, and a module in which an integrated circuit (IC) is directly mounted on a light-emitting device by a chip on glass (COG) method.
  • a lighting device or the like may include the light-emitting apparatus.
  • a novel display apparatus that is highly convenient, useful, or reliable can be provided.
  • Another embodiment of the present invention can provide a novel display module that is highly convenient, useful, or reliable.
  • Another embodiment of the present invention can provide a novel electronic device that is highly convenient, useful, or reliable.
  • a novel display apparatus can be provided.
  • a novel display module can be provided.
  • a novel electronic device can be provided.
  • FIGS. 1 A and 1 B illustrate a structure of a display apparatus of an embodiment.
  • FIGS. 2 A and 2 B each illustrate a structure of a display apparatus of an embodiment.
  • FIGS. 3 A and 3 B each illustrate a structure of a display apparatus of an embodiment.
  • FIG. 4 illustrates a structure of a display apparatus of an embodiment.
  • FIGS. 5 A and 5 B each illustrate a structure of a display apparatus of an embodiment.
  • FIG. 6 is a circuit diagram illustrating a structure of a display apparatus of an embodiment.
  • FIGS. 7 A and 7 B illustrate a structure of a light-emitting device of an embodiment.
  • FIGS. 8 A and 8 B each illustrate a structure of a light-emitting device of an embodiment.
  • FIGS. 9 A and 9 B each illustrate a structure of a pixel of an embodiment.
  • FIGS. 10 A and 10 B each illustrate a structure of a pixel of an embodiment.
  • FIGS. 11 A and 11 B each illustrate a structure of a pixel of an embodiment.
  • FIG. 12 illustrates a structure of a display module of an embodiment.
  • FIG. 13 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 14 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 15 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 16 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 17 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 18 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 19 illustrates a structure of a display module of an embodiment.
  • FIGS. 20 A to 20 C illustrate a structure of a display apparatus of an embodiment.
  • FIG. 21 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 22 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 23 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 24 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 25 illustrates a structure of a display apparatus of an embodiment.
  • FIG. 26 illustrates a structure of a display apparatus of an embodiment.
  • FIGS. 27 A to 27 D each illustrate one example of an electronic device of an embodiment.
  • FIGS. 28 A to 28 F illustrate examples of electronic devices of an embodiment.
  • FIGS. 29 A to 29 G illustrate examples of electronic devices of an embodiment.
  • a display apparatus of one embodiment of the present invention includes a first pixel, a second pixel, a third pixel, and a fourth pixel.
  • the first pixel includes a first light-emitting device and a first layer.
  • the first light-emitting device emits first light toward the first layer.
  • An emission spectrum of the first light has intensities in a blue-light wavelength range and a green-light wavelength range.
  • the first layer contains a color conversion material that converts blue and green light into red light.
  • the second pixel includes a second light-emitting device and a second layer.
  • the second light-emitting device emits second light toward the second layer.
  • An emission spectrum of the second light is the same as the emission spectrum of the first light.
  • the second layer has a function of transmitting blue light.
  • the third pixel includes a third light-emitting device and a third layer.
  • the third light-emitting device emits third light toward the third layer.
  • An emission spectrum of the third light is the same as the emission spectrum of the first light.
  • the third layer has a function of absorbing blue light and transmitting green light.
  • the fourth pixel includes a fourth light-emitting device and a fourth layer.
  • the fourth light-emitting device emits fourth light toward the fourth layer.
  • An emission spectrum of the fourth light is the same as the emission spectrum of the first light.
  • the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can emit light with the same emission spectrum.
  • structures of the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can be made the same as each other.
  • the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device can be formed in the same step.
  • a process of manufacturing the display apparatus can be simplified.
  • the human eye has higher visual sensitivity with respect to green light than that with respect to blue light with high color purity.
  • a spectrum representing blue light with high color purity has a narrow full width at half maximum, and a spectrum representing both blue and green light has a wide full width at half maximum.
  • an emission spectrum of a light-emitting substance causing a large Stokes shift e.g., an emission spectrum of a phosphorescent substance
  • a phosphorescent substance has higher emission efficiency than a fluorescent substance.
  • a light-emitting device emitting light including blue and green light has higher emission efficiency than a light-emitting device emitting blue light with high color purity.
  • a light-emitting device emitting light including blue and green light has higher reliability than a light-emitting device emitting blue light with high color purity.
  • the reliability can be increased.
  • a novel display apparatus that is highly convenient, useful, or reliable can be provided.
  • FIGS. 1 A and 1 B and FIGS. 2 A and 2 B a structure of a display apparatus of one embodiment of the present invention will be described with reference to FIGS. 1 A and 1 B and FIGS. 2 A and 2 B .
  • FIG. 1 A is a perspective view illustrating a structure of the display apparatus of one embodiment of the present invention
  • FIG. 1 B is a front view illustrating part of the structure of the display apparatus of one embodiment of the present invention.
  • FIG. 2 A is a cross-sectional view taken along line P-Q in FIG. 1 B .
  • FIG. 2 B is a cross-sectional view illustrating a structure different from that in FIG. 2 A .
  • One embodiment of the present invention is a display apparatus 700 including a pixel 703 that is a set of pixels (see FIG. 1 A ).
  • the pixel 703 (the set of pixels) is composed of a pixel 702 A, a pixel 702 B, a pixel 702 C, and a pixel 702 D (see FIG. 1 B ).
  • the display apparatus 700 includes a substrate 510 and a functional layer 520 (see FIG. 1 A ).
  • the functional layer 520 overlaps with the substrate 510 , and the functional layer 520 includes a pixel circuit 530 A, a pixel circuit 530 B, a pixel circuit 530 C, and a pixel circuit 530 D (see FIG. 2 A ).
  • the pixel 702 A includes a light-emitting device 550 A and a layer CFA, and the light-emitting device 550 A overlaps with the layer CFA (see FIG. 2 A ).
  • the pixel 702 A also includes the pixel circuit 530 A, and the pixel circuit 530 A is electrically connected to the light-emitting device 550 A.
  • the light-emitting device 550 A emits light ELA toward the layer CFA, and an emission spectrum of the light ELA shows blue and green light.
  • the emission spectrum of the light ELA have intensities in a blue-light wavelength range and a green-light wavelength range.
  • blue light includes light whose wavelength is greater than or equal to 430 nm and less than 490 nm
  • green light includes light whose wavelength is greater than or equal to 490 nm and less than 550 nm
  • red light includes light whose wavelength is greater than or equal to 640 nm and less than 770 nm.
  • an organic EL element can be used as the light-emitting device 550 A.
  • an inorganic LED can be used as the light-emitting device 550 A.
  • a light-emitting device containing a first light-emitting material having a blue-light emission spectrum and a second light-emitting material having a green-light emission spectrum can be used as the light-emitting device 550 A.
  • a single light-emitting material having a broad emission spectrum with blue and green light can be used for the light-emitting device 550 A.
  • the light-emitting material(s) whose emission spectrum shows blue and green light has higher emission efficiency than a light-emitting material of blue light with high color purity. The use of a material with high emission efficiency enables power consumption of the light-emitting device to be reduced.
  • the layer CFA has a function of absorbing the light ELA.
  • the layer CFA contains a color conversion material that converts blue and green light into red light.
  • the layer CFA can have a structure in which a plurality of films are stacked (see FIG. 3 A ). Specifically, a structure in which a layer CFA 1 and a layer CFA 2 are stacked can be used as the layer CFA.
  • a color conversion material that converts a color of light emitted by a light-emitting device can be used for the layer CFA 1 .
  • a coloring material that absorbs light emitted by the light-emitting device can be used for the layer CFA 2 .
  • the layer CFA 1 can efficiently convert a color of light emitted by the light-emitting device.
  • the layer CFA 2 can absorb light of the light-emitting device, which has passed through the layer CFA 1 , i.e., light of a color that has not been converted by the layer CFA 1 .
  • the layer CFA 2 can absorb external light and decrease the intensity of external light reaching the layer CFA 1 through the layer CFA 2 .
  • a phosphor can be used for the layer CFA, for example.
  • a quantum dot QD
  • the quantum dot has an emission spectrum with a narrow peak. Accordingly, light emission with high color purity can be obtained. Moreover, the light ELA can be converted into red light with high color purity.
  • the layer CFA can use a coloring material that absorbs light whose wavelength is less than 640 nm and transmits light whose wavelength is greater than or equal to 640 nm and less than 770 nm.
  • a coloring material for a color filter can be used for the layer CFA.
  • red light RED with high color purity can be extracted.
  • the pixel 702 A can be used to display a red color.
  • the pixel 702 B includes a light-emitting device 550 B and a layer CFB, and the light-emitting device 550 B overlaps with the layer CFB (see FIG. 2 A ).
  • the pixel 702 B also includes the pixel circuit 530 B, and the pixel circuit 530 B is electrically connected to the light-emitting device 550 B.
  • the light-emitting device 550 B emits light ELB toward the layer CFB, and an emission spectrum of the light ELB is the same as that of the light ELA.
  • the light-emitting device 550 B can employ the same structure as the light-emitting device 550 A.
  • the layer CFB has a function of transmitting blue light and absorbing green light (see FIG. 3 A ).
  • the layer CFB can use a coloring material that transmits light whose wavelength is less than 490 nm and absorbs light whose wavelength is greater than or equal to 490 nm.
  • a coloring material for a color filter can be used for the layer CFB. Accordingly, blue light BLUE with high color purity can be extracted.
  • the pixel 702 B can be used to display a blue color.
  • the pixel 702 C includes a light-emitting device 550 C and a layer CFC, and the light-emitting device 550 C overlaps with the layer CFC (see FIG. 2 A ).
  • the pixel 702 C also includes the pixel circuit 530 C, and the pixel circuit 530 C is electrically connected to the light-emitting device 550 C.
  • the light-emitting device 550 C emits light ELC toward the layer CFC, and an emission spectrum of the light ELC is the same as that of the light ELA.
  • the light-emitting device 550 C can employ the same structure as the light-emitting device 550 A.
  • the layer CFC has a function of absorbing blue light and transmitting green light (see FIG. 3 A ).
  • the layer CFC can use a coloring material that absorbs light whose wavelength is less than 490 nm and transmits light whose wavelength is greater than or equal to 490 nm and less than 550 nm.
  • a coloring material for a color filter can be used for the layer CFC. Accordingly, green light GREEN with high color purity can be extracted.
  • the pixel 702 C can be used to display a green color.
  • the layer CFC can use a color conversion material that converts blue light into green light.
  • the layer CFC can have a structure in which a plurality of films are stacked (see FIG. 3 B ). Specifically, a structure in which a layer CFC 1 and a layer CFC 2 are stacked can be used as the layer CFC.
  • a color conversion material that converts a color of light emitted by a light-emitting device can be used for the layer CFC 1 .
  • a coloring material that absorbs light emitted by the light-emitting device can be used for the layer CFC 2 .
  • the layer CFC 1 can efficiently convert a color of light emitted by the light-emitting device.
  • the layer CFC 2 can absorb light of the light-emitting device, which has passed through the layer CFC 1 , i.e., light of a color that has not been converted by the layer CFC 1 .
  • the layer CFC 2 can absorb external light and decrease the intensity of external light reaching the layer CFC 1 through the layer CFC 2 .
  • a phosphor can be used for the layer CFC.
  • a quantum dot can be used for the layer CFC. Accordingly, the light ELC can be converted into the green light GREEN with high color purity.
  • the pixel 702 D includes a light-emitting device 550 D and a layer CFD, and the light-emitting device 550 D overlaps with the layer CFD (see FIG. 2 A ).
  • the pixel 702 D also includes the pixel circuit 530 D, and the pixel circuit 530 D is electrically connected to the light-emitting device 550 D.
  • the light-emitting device 550 D emits light ELD toward the layer CFD, and an emission spectrum of the light ELD is the same as that of the light ELA.
  • the light-emitting device 550 D can employ the same structure as the light-emitting device 550 A.
  • the light-emitting device 550 A, the light-emitting device 550 B, the light-emitting device 550 C, and the light-emitting device 550 D can emit light with the same emission spectrum. Furthermore, the light-emitting device 550 A, the light-emitting device 550 B, the light-emitting device 550 C, and the light-emitting device 550 D can have the same structure.
  • the light-emitting device 550 A, the light-emitting device 550 B, the light-emitting device 550 C, and the light-emitting device 550 D can be formed in the same step. Furthermore, a process of manufacturing the display apparatus can be simplified. Furthermore, the human eye has higher visual sensitivity with respect to green light than that with respect to blue light with high color purity. Furthermore, a spectrum representing blue light with high color purity has a narrow full width at half maximum, and a spectrum representing both blue and green light has a wide full width at half maximum. Furthermore, an emission spectrum of a light-emitting substance causing a large Stokes shift, e.g., an emission spectrum of a phosphorescent substance, has a wide full width at half maximum.
  • a phosphorescent substance has higher emission efficiency than a fluorescent substance.
  • a light-emitting device emitting light including blue and green light has higher emission efficiency than a light-emitting device emitting blue light with high color purity. Furthermore, higher emission efficiency enables power consumption to be reduced.
  • a light-emitting device emitting light including blue and green light has higher reliability than a light-emitting device emitting blue light with high color purity. In addition, the reliability can be increased. As a result, a novel display apparatus that is highly convenient, useful, or reliable can be provided.
  • the layer CFD transmits the light ELD (see FIGS. 3 A and 3 B ). Accordingly, the blue light BLUE and the green light GREEN can be used for display.
  • the pixel 702 D can be used to compensate for the luminance of the pixel 702 B and the pixel 702 C. Furthermore, the pixel 702 D can be used to suppress the luminance of the pixel 702 B and the pixel 702 C.
  • the pixel 702 D enables a color to be displayed with use of light including blue and green light. Furthermore, luminance of the pixel 702 B and the pixel 702 C can be suppressed with use of the pixel 702 D. Furthermore, the pixel 702 D can utilize light more efficiently than the pixel 702 B and the pixel 702 C. Furthermore, the power consumption can be reduced. Furthermore, the reliability can be increased. As a result, a novel display apparatus that is highly convenient, useful, or reliable can be provided.
  • the layer CFD transmits and absorbs the light ELD. Furthermore, the layer CFD has a function of converting absorbed light into red light (see FIG. 4 ). For example, a color conversion material can be used for the layer CFD. Accordingly, the blue light BLUE, the green light GREEN, and the red light RED can be used for display. Furthermore, the pixel 702 D can be used to compensate for luminance of the other pixels. Moreover, the pixel 702 D can be used to suppress luminance of the other pixels.
  • a color conversion material that converts blue and green light into red light can be used for the layer CFD.
  • a phosphor that converts blue and green light into red light can be used for the layer CFD.
  • a quantum dot can be used for the layer CFD.
  • a color conversion material that converts green light into red light can be used for the layer CFD.
  • a phosphor that converts green light selectively can be used for the layer CFD.
  • a quantum dot can be used for the layer CFD.
  • a color conversion material that converts blue light into red light and a conversion material that converts green light into red light can be used for the layer CFD.
  • two kinds of phosphors can be used for the layer CFD.
  • two kinds of quantum dots can be used for the layer CFD.
  • the pixel 702 D enables a color to be displayed with use of light including blue light, green light, and red light. Furthermore, luminance of the pixel 702 A, the pixel 702 B, and the pixel 702 C can be suppressed with use of the pixel 702 D. Furthermore, the reliability can be increased. As a result, a novel display apparatus that is highly convenient, useful, or reliable can be provided.
  • One embodiment of the present invention is a display apparatus including the pixel 703 that is a set of pixels (see FIG. 1 A ).
  • the pixel 703 (the set of pixels) is composed of the pixel 702 A, the pixel 702 B, the pixel 702 C, and the pixel 702 D (see FIG. 1 B ).
  • the display apparatus 700 includes the substrate 510 and the functional layer 520 (see FIG. 1 A ).
  • the functional layer 520 overlaps with the substrate 510 , and the functional layer 520 includes the pixel circuit 530 A, the pixel circuit 530 B, the pixel circuit 530 C, and the pixel circuit 530 D (see FIG. 2 A ).
  • the structure described in ⁇ Structure example 2 of display apparatus 700 > in one embodiment of the present invention is different from that in ⁇ Structure example 1 of display apparatus 700 >.
  • the light-emitting device 550 A, the light-emitting device 550 B, the light-emitting device 550 C, and the light-emitting device 550 D each provide an emission spectrum showing a blue light (blue-light emission spectrum) instead of the emission spectrum showing blue and green light, which is a point of difference from ⁇ Structure example 1 of display apparatus 700 >.
  • Different parts will be described in detail below, and the above description is referred to for parts having the same structure as the above.
  • the pixel 702 A includes the light-emitting device 550 A and the layer CFA, and the light-emitting device 550 A overlaps with the layer CFA (see FIG. 2 A ).
  • the pixel 702 A also includes the pixel circuit 530 A, and the pixel circuit 530 A is electrically connected to the light-emitting device 550 A.
  • the light-emitting device 550 A emits the light ELA toward the layer CFA, and the light ELA is represented by a blue-light emission spectrum.
  • an organic EL element can be used as the light-emitting device 550 A.
  • an inorganic LED can be used as the light-emitting device 550 A.
  • a light-emitting device containing a first light-emitting material having a blue-light emission spectrum can be used as the light-emitting device 550 A.
  • the layer CFA has a function of absorbing the light ELA.
  • the layer CFA contains a color conversion material converting blue light into red light.
  • the layer CFA can have a structure in which a plurality of films are stacked (see FIG. 5 A ).
  • a structure in which the layer CFA 1 and the layer CFA 2 are stacked can be used as the layer CFA.
  • a color conversion material that converts a color of light emitted by a light-emitting device can be used for the layer CFA 1 .
  • a coloring material that absorbs light emitted by the light-emitting device can be used for the layer CFA 2 .
  • the layer CFA 1 can efficiently convert a color of light emitted by the light-emitting device.
  • the layer CFA 2 can absorb light of the light-emitting device, which has passed through the layer CFA 1 , i.e., light of a color that has not been converted by the layer CFA 1 .
  • the layer CFA 2 can absorb external light and decrease the intensity of external light reaching the layer CFA 1 through the layer CFA 2 .
  • a phosphor can be used for the layer CFA, for example.
  • a quantum dot can be used for the layer CFA. Accordingly, the light can be converted into red light with high color purity.
  • the layer CFA can use a coloring material that absorbs light whose wavelength is less than 640 nm and transmits light whose wavelength is greater than or equal to 640 nm and less than 770 nm.
  • a coloring material for a color filter can be used for the layer CFA.
  • red light RED with high color purity can be extracted.
  • the pixel 702 A can be used to display a red color.
  • the pixel 702 B includes the light-emitting device 550 B and the layer CFB, and the light-emitting device 550 B overlaps with the layer CFB (see FIG. 2 A ).
  • the pixel 702 B also includes the pixel circuit 530 B, and the pixel circuit 530 B is electrically connected to the light-emitting device 550 B.
  • the light-emitting device 550 B emits the light ELB toward the layer CFB, and an emission spectrum of the light ELB is the same as that of the light ELA (see FIG. 5 A ).
  • the light-emitting device 550 B can employ the same structure as the light-emitting device 550 A.
  • the layer CFB has a function of transmitting blue light.
  • the pixel 702 C includes the light-emitting device 550 C and the layer CFC, and the light-emitting device 550 C overlaps with the layer CFC (see FIG. 2 A ).
  • the pixel 702 C also includes the pixel circuit 530 C, and the pixel circuit 530 C is electrically connected to the light-emitting device 550 C.
  • the light-emitting device 550 C emits the light ELC toward the layer CFC, and an emission spectrum of the light ELC is the same as that of the light ELA (see FIG. 5 A ).
  • the light-emitting device 550 C can employ the same structure as the light-emitting device 550 A.
  • the layer CFC contains a color conversion material converting blue light into green light.
  • the layer CFC has a function of absorbing blue light.
  • the layer CFC can have a structure in which a plurality of films are stacked (see FIG. 5 B ).
  • a structure in which the layer CFC 1 and the layer CFC 2 are stacked can be used as the layer CFC.
  • a color conversion material that converts a color of light emitted by a light-emitting device can be used for the layer CFC 1 .
  • a coloring material that absorbs light emitted by the light-emitting device can be used for the layer CFC 2 .
  • the layer CFC 1 can efficiently convert a color of light emitted by the light-emitting device.
  • the layer CFC 2 can absorb light of the light-emitting device, which has passed through the layer CFC 1 , i.e., light of a color that has not been converted by the layer CFC 1 .
  • the layer CFC 2 can absorb external light and decrease the intensity of external light reaching the layer CFC 1 through the layer CFC 2 .
  • a phosphor can be used for the layer CFC, for example.
  • a quantum dot can be used for the layer CFC. Accordingly, the light can be converted into green light with high color purity.
  • the pixel 702 D includes the light-emitting device 550 D and the layer CFD, and the light-emitting device 550 D overlaps with the layer CFD (see FIG. 2 A ).
  • the pixel 702 D also includes the pixel circuit 530 D, and the pixel circuit 530 D is electrically connected to the light-emitting device 550 D.
  • the light-emitting device 550 D emits the light ELD toward the layer CFD, and an emission spectrum of the light ELD is the same as that of the light ELA (see FIG. 5 A ).
  • the light-emitting device 550 D can employ the same structure as the light-emitting device 550 A.
  • the layer CFD transmits and absorbs the light ELD.
  • the layer CFD has a function of converting blue light into yellow light (see FIG. 5 A ).
  • the yellow light includes light whose wavelength is at least greater than or equal to 550 nm and less than 640 nm.
  • a color conversion material that converts blue light into yellow light can be used for the layer CFD. Accordingly, the blue light BLUE and the yellow light YELLOW can be used for display. Furthermore, the pixel 702 D can be used to compensate for luminance of the other pixels. Moreover, the pixel 702 D can be used to suppress luminance of the other pixels.
  • a color conversion material that converts blue light into green light and a color conversion material that converts blue light into red light can be used for the layer CFD (see FIG. 5 B ). Accordingly, the blue light BLUE, the green light GREEN, and the red light RED can be used for display. Furthermore, the pixel 702 D can be used to compensate for luminance of the other pixels. Moreover, the pixel 702 D can be used to suppress luminance of the other pixels.
  • the light-emitting device 550 A, the light-emitting device 550 B, the light-emitting device 550 C, and the light-emitting device 550 D can emit light with the same emission spectrum. Furthermore, the light-emitting device 550 A, the light-emitting device 550 B, the light-emitting device 550 C, and the light-emitting device 550 D can have the same structure.
  • the light-emitting device 550 A, the light-emitting device 550 B, the light-emitting device 550 C, and the light-emitting device 550 D can be formed in the same step. Furthermore, a process of manufacturing the display apparatus can be simplified. Furthermore, the pixel 702 D enables a color to be display with use of light including blue light, green light, and red light. Furthermore, luminance of the pixel 702 A, the pixel 702 B, and the pixel 702 C can be suppressed with use of the pixel 702 D. Furthermore, the reliability can be increased. As a result, a novel display apparatus that is highly convenient, useful, or reliable can be provided.
  • One embodiment of the present invention is a display apparatus including the pixel 703 that is a set of pixels (see FIG. 6 ).
  • the pixel 703 (the set of pixels) is composed of the pixel 702 A, the pixel 702 B, the pixel 702 C, and the pixel 702 D.
  • the display apparatus 700 includes the substrate 510 and the functional layer 520 (see FIG. 1 A ).
  • the functional layer 520 overlaps with the substrate 510 , and the functional layer 520 includes the pixel circuit 530 A, the pixel circuit 530 B, the pixel circuit 530 C, and the pixel circuit 530 D (see FIG. 2 B ).
  • the functional layer 520 includes a conductive film G1(i), a conductive film G2(i), a conductive film SA(j), a conductive film SB(j), a conductive film SC(j), a conductive film SD(j), a conductive film ANO(j), and a conductive film INT(j) (see FIG. 6 ).
  • the conductive film G1(i) is electrically connected to the pixel circuit 530 A, the pixel circuit 530 B, the pixel circuit 530 C, and the pixel circuit 530 D and supplies a first control signal, for example.
  • the conductive film G2(i) is electrically connected to the pixel circuit 530 A, the pixel circuit 530 B, the pixel circuit 530 C, and the pixel circuit 530 D and supplies a second control signal, for example.
  • the conductive film SA(j) is electrically connected to the pixel circuit 530 A and supplies a first image signal, for example.
  • the conductive film SB(j) is electrically connected to the pixel circuit 530 B and supplies a second image signal, for example.
  • the conductive film SC(j) is electrically connected to the pixel circuit 530 C and supplies a third image signal, for example.
  • the conductive film SD(j) is electrically connected to the pixel circuit 530 A and supplies a fourth image signal, for example.
  • the conductive film INT(j) is electrically connected to the pixel circuit 530 A, the pixel circuit 530 B, the pixel circuit 530 C, and the pixel circuit 530 D and supplies a potential for initializing the pixel circuits, for example.
  • the conductive film ANO(j) is electrically connected to the pixel circuit 530 A, the pixel circuit 530 B, the pixel circuit 530 C, and the pixel circuit 530 D and supplies power for driving the light-emitting device, for example.
  • the pixel circuit 530 A includes a transistor TR 1 , a transistor TR 2 , a transistor TR 3 , and a capacitor CS.
  • the pixel circuit 530 A also include a node NA, and the node NA is electrically connected to the light-emitting device 550 A.
  • the transistor TR 1 includes a gate electrode electrically connected to the conductive film G1(i), a first electrode electrically connected to the conductive film SA(j), and a second electrode.
  • the transistor TR 2 includes a gate electrode electrically connected to the second electrode of the transistor TR 1 , a first electrode electrically connected to the conductive film ANO(j), and a second electrode electrically connected to the node NA.
  • the transistor TR 3 includes a gate electrode electrically connected to the conductive film G2(i), a first electrode electrically connected to the conductive film INT(j), and a second electrode electrically connected to the node NA.
  • the capacitor CS includes a first conductive film electrically connected to the second electrode of the transistor TR 1 and a second conductive film electrically connected to the node NA.
  • the second conductive film overlaps with the first conductive film, and a dielectric is sandwiched between the second conductive film and the first conductive film.
  • the second electrode of the transistor TR 2 the second electrode of the transistor TR 3 , and the second conductive film of the capacitor CS are electrically connected.
  • Each of the pixel circuit 530 A, the pixel circuit 530 B, the pixel circuit 530 C, and the pixel circuit 530 D includes the transistor TR 2 .
  • the transistors TR 2 in the above pixel circuits have the same size.
  • the transistors TR 2 in the above pixel circuits have the same channel width. Accordingly, the driving capability of the light-emitting device 550 A, the light-emitting device 550 B, the light-emitting device 550 C, and the light-emitting device 550 D can be the same.
  • the capability of supplying current can be equivalent between the light-emitting device 550 A, the light-emitting device 550 B, the light-emitting device 550 C, and the light-emitting device 550 D.
  • Each of the pixel circuit 530 A, the pixel circuit 530 B, the pixel circuit 530 C, and the pixel circuit 530 D includes the transistor TR 2 .
  • the transistor TR 2 included in the pixel circuit 530 D can be made smaller than the transistors TR 2 included in the pixel circuit 530 A, the pixel circuit 530 B, or the pixel circuit 530 C.
  • Light emitted by the light-emitting device 550 D is less likely to be absorbed by the layer CFD.
  • luminance required for the light-emitting device 550 D can be low. Even when a transistor with low driving capability is used as the transistor TR 2 , the required luminance can be obtained. Furthermore, even when a transistor with low driving capability is used as the transistor TR 2 , the required current can be supplied to the light-emitting device 550 D.
  • One embodiment of the present invention is a display apparatus including the pixel 703 that is a set of pixels (see FIG. 1 A ).
  • the pixel 703 (the set of pixels) is composed of the pixel 702 A, the pixel 702 B, the pixel 702 C, and the pixel 702 D (see FIG. 1 B ).
  • the display apparatus 700 includes the substrate 510 and the functional layer 520 (see FIG. 1 A ).
  • the functional layer 520 overlaps with the substrate 510 , and the functional layer 520 includes the pixel circuit 530 A, the pixel circuit 530 B, the pixel circuit 530 C, and the pixel circuit 530 D (see FIG. 2 B ).
  • ⁇ Structure example 4 of display apparatus 700 > of one embodiment of the present invention is different from that in ⁇ Structure example 1 of display apparatus 700 > in the following points: the layer CFA is located between the light-emitting device 550 A and the pixel circuit 530 A; the layer CFB is located between the light-emitting device 550 B and the pixel circuit 530 B; the layer CFC is located between the light-emitting device 550 C and the pixel circuit 530 C; and the layer CFD is located between the light-emitting device 550 D and the pixel circuit 530 D.
  • ⁇ Structure example 1 of display apparatus 700 > shown with FIG. 2 A is a top-emission display apparatus
  • ⁇ Structure example 3 of display apparatus 700 > shown with FIG. 2 B is a bottom-emission display apparatus.
  • FIGS. 7 A and 7 B a structure of a light-emitting device that can be used for a display apparatus of one embodiment of the present invention will be described with reference to FIGS. 7 A and 7 B .
  • FIG. 7 A is a cross-sectional view illustrating a structure of a light-emitting device of one embodiment of the present invention
  • FIG. 7 B is a diagram illustrating energy levels of materials used for the light-emitting device of one embodiment of the present invention.
  • a structure of a light-emitting device 550 X described in this embodiment can be used for a display apparatus of one embodiment of the present invention.
  • the description for the structure of the light-emitting device 550 X can be applied for the light-emitting device 550 A.
  • the description of the light-emitting device 550 X can be used for the description of the light-emitting device 550 A by replacing “X” in the reference numerals of the components of the light-emitting device 550 X with “A”.
  • the description of the light-emitting device 550 X can be used for the description of the light-emitting device 550 B, the light-emitting device 550 C, or the light-emitting device 550 D by replacing “X” in the reference numerals of the components of the components of the light-emitting device 550 X with “B”, “C”, or “D”.
  • the light-emitting device 550 X described in this embodiment includes an electrode 551 X, an electrode 552 X, and a unit 103 X.
  • the electrode 552 X overlaps with the electrode 551 X, and the unit 103 X is located between the electrode 552 X and the electrode 551 X.
  • the unit 103 X has a single-layer structure or a stacked-layer structure.
  • the unit 103 X includes a layer 111 X, the layer 112 X, and a layer 113 X, for example (see FIG. 7 A ).
  • the unit 103 X has a function of emitting light ELX.
  • the layer 111 X is located between the layer 113 X and the layer 112 X, the layer 113 X is located between the electrode 552 X and the layer 111 X, and the layer 112 X is located between the layer 111 X and the electrode 551 X.
  • a layer selected from functional layers such as a light-emitting layer, a hole-transport layer, an electron-transport layer, and a carrier-blocking layer can be used for the unit 103 X.
  • a layer selected from functional layers such as a hole-injection layer, an electron-injection layer, an exciton-blocking layer, and a charge-generation layer can also be used for the unit 103 X.
  • a hole-transport material can be used for the layer 112 X, for example.
  • the layer 112 X can be referred to as a hole-transport layer.
  • a material having a wider bandgap than the light-emitting material contained in the layer 111 X is preferably used for the layer 112 X. In that case, transfer of energy from excitons generated in the layer 111 X to the layer 112 X can be inhibited.
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or higher can be suitably used as the hole-transport material.
  • an amine compound or an organic compound having a ⁇ -electron rich heteroaromatic ring skeleton can be used, for example.
  • a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, a compound having a furan skeleton, or the like can be used.
  • the compound having an aromatic amine skeleton and the compound having a carbazole skeleton are particularly preferable because these compounds are highly reliable and have high hole-transport properties to contribute to a reduction in driving voltage.
  • NPB 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl
  • TPD N,N-diphenyl-N,N-bis(3-methylphenyl)-4,4′-diaminobiphenyl
  • BSPB N,N-bis(9,9′-spirobi[9H-fluoren]-2-yl)-N,N-diphenyl-4,4′-diaminobiphenyl
  • BPAFLP 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine
  • mBPAFLP 4-phenyl-3′-(9-phenylfluoren-9-yl)triphenylamine
  • mBPAFLP 4-phenyl-4′-(9-phenyl-9
  • mCP 1,3-bis(N-carbazolyl)benzene
  • CBP 4,4′-di(N-carbazolyl)biphenyl
  • CzTP 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole
  • PCCP 3,3′-bis(9-phenyl-9H-carbazole
  • DBT3P-II 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzothiophene)
  • DBT3P-II 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene
  • DBTFLP-III 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene
  • DBTFLP-IV 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene
  • DBF3P-II 4,4′,4′′-(benzene-1,3,5-triyl)tri(dibenzofuran)
  • mmDBFFLBi-II 4- ⁇ 3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl ⁇ dibenzofuran
  • An electron-transport material, a material having an anthracene skeleton, and a mixed material can be used for the layer 113 X, for example.
  • the layer 113 X can be referred to as an electron-transport layer.
  • a material having a wider bandgap than the light-emitting material contained in the layer 111 X is preferably used for the layer 113 X. In that case, energy transfer from excitons generated in the layer 111 X to the layer 113 X can be inhibited.
  • a material having an electron mobility higher than or equal to 1 ⁇ 10 ⁇ 7 cm 2 /Vs and lower than or equal to 5 ⁇ 10 ⁇ 5 cm 2 /Vs when the square root of the electric field strength [V/cm] is 600 can be suitably used as the electron-transport material, for example.
  • the electron-transport property in the electron-transport layer can be suppressed.
  • the amount of electrons injected into the light-emitting layer can be controlled.
  • the light-emitting layer can be prevented from having excess electrons.
  • a metal complex or an organic compound having a ⁇ -electron deficient heteroaromatic ring skeleton can be used as the electron-transport material.
  • bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq 2 ), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), or bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ) can be used, for example.
  • BeBq 2 bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III)
  • BAlq bis(8-quinolinolato)zinc(II)
  • Znq bis[2-(2-benzoxazolyl)phenolato]
  • a heterocyclic compound having a polyazole skeleton As an organic compound having a ⁇ -electron deficient heteroaromatic ring skeleton, a heterocyclic compound having a polyazole skeleton, a heterocyclic compound having a diazine skeleton, a heterocyclic compound having a pyridine skeleton, or a heterocyclic compound having a triazine skeleton can be used, for example.
  • the heterocyclic compound having a diazine skeleton or the heterocyclic compound having a pyridine skeleton has favorable reliability and thus are preferable.
  • the heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has a high electron-transport property to contribute to a reduction in driving voltage.
  • heterocyclic compound having a polyazole skeleton 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2′,2′′-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), or 2-[3-(
  • heterocyclic compound having a pyridine skeleton 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) or 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB) can be used, for example.
  • 35DCzPPy 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine
  • TmPyPB 1,3,5-tri[3-(3-pyridyl)phenyl]benzene
  • heterocyclic compound having a triazine skeleton 2-[3′-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9′-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2- ⁇ 3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl ⁇ -4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), or 2- ⁇ 3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl]
  • An organic compound having an anthracene skeleton can be used for the layer 113 X.
  • an organic compound having both an anthracene skeleton and a heterocyclic skeleton can be suitably used.
  • an organic compound having both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton can be used for the layer 113 X.
  • an organic compound having both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton where two heteroatoms are included in a ring can be used for the layer 113 X.
  • a pyrazole ring, an imidazole ring, an oxazole ring, a thiazole ring, or the like can be suitably used as the heterocyclic skeleton.
  • an organic compound having both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton can be used for the layer 113 X.
  • an organic compound having both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton where two heteroatoms are included in a ring can be used for the layer 113 X.
  • a pyrazine ring, a pyrimidine ring, a pyridazine ring, or the like can be suitably used as the heterocyclic skeleton.
  • a material in which a plurality of kinds of substances are mixed can be used for the layer 113 X.
  • a mixed material which contains an alkali metal, an alkali metal compound, or an alkali metal complex and an electron-transport substance can be used for the layer 113 X.
  • the electron-transport material preferably has a HOMO level of ⁇ 6.0 eV or higher.
  • the mixed material can be suitably used for the layer 113 X in combination with a structure using a composite material, which is separately described, for a layer 104 X.
  • a composite material of an electron-accepting substance and a hole-transport material can be used for the layer 104 X.
  • a composite material of an electron-accepting substance and a substance having a relatively deep HOMO level HM1, which is higher than or equal to ⁇ 5.7 eV and lower than or equal to ⁇ 5.4 eV can be used for the layer 104 X (see FIG. 7 B ).
  • Using the mixed material for the layer 113 X in combination with the structure using such a composite material for the layer 104 X leads to an increase in the reliability of the light-emitting device.
  • a structure using a hole-transport material for the layer 112 X is preferably combined with the structure using the mixed material for the layer 113 X and the composite material for the layer 104 X.
  • a substance having a HOMO level HM2 which differs by ⁇ 0.2 eV to 0 eV from the relatively deep HOMO level HM1
  • the structure of the above-described light-emitting device may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure).
  • the concentration of the alkali metal, the alkali metal compound, or the alkali metal complex preferably changes in the thickness direction of the layer 113 X (including the case where the concentration is 0).
  • a metal complex having an 8-hydroxyquinolinato structure can be used.
  • a methyl-substituted product of the metal complex having an 8-hydroxyquinolinato structure e.g., a 2-methyl-substituted product or a 5-methyl-substituted product) or the like can also be used.
  • 8-hydroxyquinolinato-lithium abbreviation: Liq
  • 8-hydroxyquinolinato-sodium abbreviation: Naq
  • a complex of a monovalent metal ion, especially a complex of lithium is preferable, and Liq is further preferable.
  • Either a structure containing a light-emitting material or a structure containing a light-emitting material and a host material can be employed for the layer 111 X, for example.
  • the layer 111 X can be referred to as a light-emitting layer.
  • the layer 111 X is preferably provided in a region where holes and electrons are recombined. This allows efficient conversion of energy generated by recombination of carriers into light and emission of the light.
  • the layer 111 X is preferably provided apart from a metal used for the electrode or the like. In that case, a quenching phenomenon caused by the metal used for the electrode or the like can be inhibited.
  • a distance from an electrode or the like having reflectivity to the layer 111 X be adjusted and the layer 111 X be placed in an appropriate position in accordance with an emission wavelength.
  • the amplitude can be increased by utilizing an interference phenomenon between light reflected by the electrode or the like and light emitted from the layer 111 X.
  • Light with a predetermined wavelength can be intensified and the spectrum of the light can be narrowed.
  • bright light emission colors with high intensity can be obtained.
  • the layer 111 X is placed in an appropriate position, for example, between electrodes and the like, and thus a microcavity structure can be formed.
  • a fluorescent substance, a phosphorescent substance, or a substance exhibiting thermally activated delayed fluorescence (TADF) can be used for the light-emitting material.
  • TADF thermally activated delayed fluorescence
  • the layer 111 X can be a layer in which a layer containing a material that emits blue light and a layer containing a material that emits green light are stacked.
  • the material emitting blue light has an emission spectrum whose emission intensity peak is positioned in a region of a wavelength greater than or equal to 430 nm and less than 490 nm.
  • the material emitting green light has an emission spectrum whose emission intensity peak is positioned in a region of a wavelength greater than or equal to 490 nm and less than 550 nm.
  • a fluorescent substance can be used for the layer 111 X.
  • the following fluorescent substances can be used for the layer 111 X.
  • fluorescent substances that can be used for the layer 111 X are not limited to the following, and a variety of known fluorescent substances can be used.
  • any of the following fluorescent substances can be used: 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2′-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4′-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2′-bipyridine (abbreviation: PAPP2BPy), N,N-diphenyl-N,N′-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N-bis(3-methylphenyl)-N,N-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N-bis[4-(9H-c
  • Condensed aromatic diamine compounds typified by pyrenediamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are particularly preferable because of their high hole-trapping properties, high emission efficiency, or high reliability.
  • fluorescent substances include N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N,N-triphenyl-1,4-phenylenedi amine (abbreviation: 2DPAPPA), N,N,N′,N′,N′′,N′′,N′′′,N′′′-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,
  • fluorescent substances include 2-(2- ⁇ 2-[4-(dimethylamino)phenyl]ethenyl ⁇ -6-methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2- ⁇ 2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene ⁇ propanedinitrile (abbreviation: DCM2), N,N,N′,N′-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N′,N′-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD),
  • a phosphorescent substance can be used for the layer 111 X.
  • phosphorescent substances described below as examples can be used for the layer 111 X.
  • phosphorescent substances that can be used for the layer 111 X are not limited to the following, and a variety of known phosphorescent substances can be used for the layer 111 X.
  • any of the following can be used for the layer 111 X: an organometallic iridium complex having a 4H-triazole skeleton, an organometallic iridium complex having a 1H-triazole skeleton, an organometallic iridium complex having an imidazole skeleton, an organometallic iridium complex having a phenylpyridine derivative with an electron-withdrawing group as a ligand, an organometallic iridium complex having a pyrimidine skeleton, an organometallic iridium complex having a pyrazine skeleton, an organometallic iridium complex having a pyridine skeleton, a rare earth metal complex, a platinum complex, and the like.
  • organometallic iridium complex having a 1H-triazole skeleton or the like tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp) 3 ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Prptz1-Me) 3 ]), or the like can be used.
  • organometallic iridium complex having a phenylpyridine derivative with an electron-withdrawing group as a ligand, or the like, bis[2-(4′,6′-difluorophenyl)pyridinato-N,C 2′ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4′,6′-difluorophenyl)pyridinato-N,C 2′ ]iridium(III) picolinate (abbreviation: FIrpic), bis ⁇ 2-[3′,5′-bis(trifluoromethyl)phenyl]pyridinato-N,C 2′ ⁇ iridium(III) picolinate (abbreviation: Ir(CF 3 ppy) 2 (pic)), bis[2-(4′,6′-difluorophenyl)pyridinato-N,C 2′ ]iridium
  • tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) 3 ]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) 3 ]), (acetyl acetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) 2 (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) 2 (acac)]), (acetyl acetonato)bis[6-(2-norbornyl)-4-phenyl
  • organometallic iridium complex having a pyrazine skeleton or the like As an organometallic iridium complex having a pyrazine skeleton or the like, (acetyl acetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me) 2 (acac)]), (acetyl acetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) 2 (acac)]), or the like can be used.
  • rare earth metal complex examples include tris(acetylacetonato) (monophenanthroline)terbium(III) (abbreviation: Tb(acac) 3 (Phen)), and the like.
  • organometallic iridium complex having a pyridine skeleton or the like
  • tris(1-phenylisoquinolinato-N,C 2′ )iridium(III) (abbreviation: [Ir(piq) 3 ]
  • bis(1-phenylisoquinolinato-N,C 2′ )iridium(III) acetylacetonate (abbreviation: [Ir(piq) 2 (acac)]
  • tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) 3 (Phen)]
  • tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA) 3 (Phen)]
  • Eu(TTA) 3 (Phen)] tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III)
  • PtOEP 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP) or the like can be used.
  • a TADF material can be used for the layer 111 X.
  • the S1 level of the host material is preferably higher than that of the TADF material.
  • the T1 level of the host material is preferably higher than that of the TADF material.
  • TADF materials described below as examples can be used as the light-emitting material. Note that without being limited thereto, a variety of known TADF materials can be used as the light-emitting material.
  • the difference between the S1 level and the T1 level is small, and reverse intersystem crossing (upconversion) from the triplet excited state into the singlet excited state can be achieved by a small amount of thermal energy.
  • the singlet excited state can be efficiently generated from the triplet excited state.
  • the triplet excitation energy can be converted into luminescence.
  • An exciplex whose excited state is formed of two kinds of substances has an extremely small difference between the S1 level and the T1 level and functions as a TADF material capable of converting triplet excitation energy into singlet excitation energy.
  • a phosphorescent spectrum observed at a low temperature is used for an index of the T1 level.
  • the difference between the S1 level and the T1 level of the TADF material is preferably smaller than or equal to 0.3 eV, further preferably smaller than or equal to 0.2 eV.
  • the TADF material examples include a fullerene, a derivative thereof, an acridine, a derivative thereof, and an eosin derivative.
  • porphyrin containing a metal such as magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can also be used for the TADF material.
  • a protoporphyrin-tin fluoride complex SnF 2 (Proto IX)
  • a mesoporphyrin-tin fluoride complex SnF 2 (Meso IX)
  • a hematoporphyrin-tin fluoride complex SnF 2 (Hemato IX)
  • a coproporphyrin tetramethyl ester-tin fluoride complex SnF 2 (Copro III-4Me)
  • an octaethylporphyrin-tin fluoride complex SnF 2 (OEP)
  • an etioporphyrin-tin fluoride complex SnF 2 (Etio I)
  • an octaethylporphyrin-platinum chloride complex PtCl 2 OEP
  • a heterocyclic compound including one or both of a ⁇ -electron rich heteroaromatic ring and a ⁇ -electron deficient heteroaromatic ring can be used, for example, as the TADF material.
  • Such a heterocyclic compound is preferable because of its excellent electron-transport and hole-transport properties owing to a ⁇ -electron rich heteroaromatic ring and a ⁇ -electron deficient heteroaromatic ring.
  • skeletons having the ⁇ -electron deficient heteroaromatic ring in particular, a pyridine skeleton, a diazine skeleton (a pyrimidine skeleton, a pyrazine skeleton, and a pyridazine skeleton), and a triazine skeleton are preferred because of their high stability and reliability.
  • a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton are preferred because of their high electron-accepting properties and high reliability.
  • skeletons including the ⁇ -electron rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton have high stability and reliability; thus, at least one of these skeletons is preferably included.
  • a dibenzofuran skeleton is preferable as a furan skeleton, and a dibenzothiophene skeleton is preferable as a thiophene skeleton.
  • an indole skeleton As a pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable.
  • a substance in which the ⁇ -electron rich heteroaromatic ring is directly bonded to the ⁇ -electron deficient heteroaromatic ring is particularly preferred because the electron-donating property of the ⁇ -electron rich heteroaromatic ring and the electron-accepting property of the ⁇ -electron deficient heteroaromatic ring are both improved, the energy difference between the S1 level and the T1 level becomes small, and thus thermally activated delayed fluorescence can be obtained with high efficiency.
  • an aromatic ring to which an electron-withdrawing group such as a cyano group is bonded may be used instead of the ⁇ -electron deficient heteroaromatic ring.
  • an aromatic ring to which an electron-withdrawing group such as a cyano group is bonded may be used instead of the ⁇ -electron deficient heteroaromatic ring.
  • an aromatic amine skeleton, a phenazine skeleton, or the like can be used.
  • a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a skeleton containing boron such as phenylborane and boranthrene, an aromatic ring or a heteroaromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, or the like can be used.
  • a ⁇ -electron deficient skeleton and a ⁇ -electron rich skeleton can be used instead of at least one of the ⁇ -electron deficient heteroaromatic ring and the ⁇ -electron rich heteroaromatic ring.
  • a carrier-transport material can be used as the host material.
  • a hole-transport material, an electron-transport material, a TADF material, a material having an anthracene skeleton, or a mixed material can be used as the host material.
  • a material having a wider bandgap than the light-emitting material contained in the layer 111 X is preferably used as the host material. Thus, transfer of energy from excitons generated in the layer 111 X to the host material can be inhibited.
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or higher can be suitably used as the hole-transport material.
  • a hole-transport material that can be used for the layer 112 X can be used for the layer 111 X.
  • a metal complex or an organic compound having a ⁇ -electron deficient heteroaromatic ring skeleton can be used as the electron-transport material.
  • an electron-transport material that can be used for the layer 113 X can be used for the layer 111 X.
  • An organic compound having an anthracene skeleton can be used as the host material.
  • An organic compound having an anthracene skeleton is particularly preferable in the case where a fluorescent substance is used as a light-emitting substance. Thus, a light-emitting device with high emission efficiency and high durability can be obtained.
  • an organic compound having a diphenylanthracene skeleton in particular, a 9,10-diphenylanthracene skeleton
  • the host material preferably has a carbazole skeleton because the hole-injection and hole-transport properties are improved.
  • the host material preferably has a dibenzocarbazole skeleton because the HOMO level thereof is shallower than that of carbazole by approximately 0.1 eV so that holes enter the host material easily, the hole-transport property is improved, and the heat resistance is increased.
  • a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of a carbazole skeleton.
  • a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton, a substance having both a 9,10-diphenylanthracene skeleton and a benzocarbazole skeleton, or a substance having both a 9,10-diphenylanthracene skeleton and a dibenzocarbazole skeleton is preferable as the host material.
  • Examples of the substances that can be used include 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4′-yl]anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: ⁇ N- ⁇ NPAnth), 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA),
  • CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA have excellent characteristics.
  • a TADF material can be used as the host material.
  • triplet excitation energy generated in the TADF material can be converted into singlet excitation energy by reverse intersystem crossing.
  • excitation energy can be transferred to the light-emitting substance.
  • the TADF material functions as an energy donor, and the light-emitting substance functions as an energy acceptor.
  • the emission efficiency of the light-emitting device can be increased.
  • the S1 level of the TADF material is preferably higher than that of the fluorescent substance in order that high emission efficiency can be achieved. Furthermore, the T1 level of the TADF material is preferably higher than the S1 level of the fluorescent substance. Therefore, the T1 level of the TADF material is preferably higher than that of the fluorescent substance.
  • TADF material that emits light whose wavelength overlaps with the wavelength on a lowest-energy-side absorption band of the fluorescent substance. This enables smooth transfer of excitation energy from the TADF material to the fluorescent substance and accordingly enables efficient light emission, which is preferable.
  • the fluorescent substance preferably includes a protective group around a luminophore (a skeleton which causes light emission) of the fluorescent substance.
  • a protective group a substituent having no ⁇ bond and a saturated hydrocarbon are preferably used.
  • the fluorescent substance have a plurality of protective groups.
  • the substituents having no ⁇ bond are poor in carrier transport performance, whereby the TADF material and the luminophore of the fluorescent substance can be made away from each other with little influence on carrier transportation or carrier recombination.
  • the luminophore refers to an atomic group (skeleton) that causes light emission in a fluorescent substance.
  • the luminophore is preferably a skeleton having a ⁇ bond, further preferably includes an aromatic ring, and still further preferably includes a condensed aromatic ring or a condensed heteroaromatic ring.
  • Examples of the condensed aromatic ring or the condensed heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, and a phenothiazine skeleton.
  • a fluorescent substance having any of a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton is preferred because of its high fluorescence quantum yield.
  • the TADF material that can be used as the light-emitting material can be used as the host material.
  • a material in which a plurality of kinds of substances are mixed can be used as the host material.
  • a material which includes an electron-transport material and a hole-transport material can be used as the mixed material.
  • a material mixed with a phosphorescent substance can be used as the host material.
  • a phosphorescent substance can be used as an energy donor for supplying excitation energy to the fluorescent substance.
  • a mixed material containing a material to form an exciplex can be used as the host material.
  • a material in which an emission spectrum of a formed exciplex overlaps with a wavelength of the absorption band on the lowest energy side of the light-emitting substance can be used as the host material. This enables smooth energy transfer and improves emission efficiency.
  • the driving voltage can be reduced. With such a structure, light emission can be efficiently obtained by exciplex-triplet energy transfer (ExTET), which is energy transfer from the exciplex to the light-emitting substance (the phosphorescent material).
  • ExTET exciplex-triplet energy transfer
  • a phosphorescent substance can be used as at least one of the materials forming an exciplex. Accordingly, reverse intersystem crossing can be used. Triplet excitation energy can be efficiently converted into singlet excitation energy.
  • the LUMO level of the hole-transport material is preferably higher than or equal to the LUMO level of the electron-transport material.
  • an exciplex can be efficiently formed.
  • the LUMO levels and the HOMO levels of the materials can be derived from the electrochemical characteristics (the reduction potentials and the oxidation potentials). Specifically, the reduction potentials and the oxidation potentials can be measured by cyclic voltammetry (CV).
  • the formation of an exciplex can be confirmed by a phenomenon in which the emission spectrum of the mixed film in which the material having a hole-transport property and the material having an electron-transport property are mixed is shifted to the longer wavelength side than the emission spectra of each of the materials (or has another peak on the longer wavelength side) observed by comparison of the emission spectra of the material having a hole-transport property, the material having an electron-transport property, and the mixed film of these materials, for example.
  • the formation of an exciplex can be confirmed by a difference in transient response, such as a phenomenon in which the transient photoluminescence (PL) lifetime of the mixed film has longer lifetime components or has a larger proportion of delayed components than that of each of the materials, observed by comparison of transient PL of the material having a hole-transport property, the material having an electron-transport property, and the mixed film of these materials.
  • the transient PL can be rephrased as transient electroluminescence (EL). That is, the formation of an exciplex can also be confirmed by a difference in transient response observed by comparison of the transient EL of the material having a hole-transport property, the material having an electron-transport property, and the mixed film of these materials.
  • FIGS. 7 A and 7 B a structure of the light-emitting device 550 X of one embodiment of the present invention will be described with reference to FIGS. 7 A and 7 B .
  • the light-emitting device 550 X described in this embodiment includes the electrode 551 X, the electrode 552 X, the unit 103 X, and the layer 104 X.
  • the electrode 552 X overlaps with the electrode 551 X, and the unit 103 X is located between the electrode 551 X and the electrode 552 X.
  • the layer 104 X is located between the electrode 551 X and the unit 103 X.
  • the structure described in Embodiment 2 can be employed for the unit 103 X.
  • a conductive material can be used for the electrode 551 X.
  • a single layer or a stack using a metal, an alloy, or a film containing a conductive compound can be used for the electrode 551 X.
  • a film that efficiently reflects light can be used for the electrode 551 X, for example.
  • an alloy containing silver, copper, and the like, an alloy containing silver, palladium, and the like, or a metal film of aluminum or the like can be used for the electrode 551 X.
  • a metal film that transmits part of light and reflects another part of light can be used for the electrode 551 X.
  • a microcavity structure can be provided in the light-emitting device 550 X.
  • light with a predetermined wavelength can be extracted more efficiently than light with the other wavelengths.
  • light with a narrow spectral half-width can be extracted.
  • light of a bright color can be extracted.
  • a film having a visible-light-transmitting property can be used for the electrode 551 X, for example.
  • a single layer or a stack using a metal film, an alloy film, a conductive oxide film, or the like that is thin enough to transmit light can be used for the electrode 551 X.
  • a material having a work function higher than or equal to 4.0 eV can be suitably used for the electrode 551 X.
  • a conductive oxide containing indium can be used.
  • indium oxide, indium oxide-tin oxide (abbreviation: ITO), indium oxide-tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium oxide-zinc oxide, indium oxide containing tungsten oxide and zinc oxide (abbreviation: IWZO), or the like can be used.
  • a conductive oxide containing zinc can be used.
  • zinc oxide, zinc oxide to which gallium is added, zinc oxide to which aluminum is added, or the like can be used.
  • gold Au
  • platinum Pt
  • nickel Ni
  • tungsten W
  • Cr chromium
  • Mo molybdenum
  • iron Fe
  • Co cobalt
  • Cu copper
  • palladium Pd
  • a nitride of a metal material e.g., titanium nitride
  • Graphene can also be used.
  • a hole-injection material can be used for the layer 104 X, for example.
  • the layer 104 X can be referred to as a hole-injection layer.
  • a material having a hole mobility lower than or equal to 1 ⁇ 10 ⁇ 3 cm 2 /Vs when the square root of the electric field strength [V/cm] is 600 can be used for the layer 104 X.
  • a film having an electrical resistivity greater than or equal to 1 ⁇ 10 4 [ ⁇ cm] and less than or equal to 1 ⁇ 10 7 [ ⁇ cm] can be used as the layer 104 X.
  • the electrical resistivity of the layer 104 X is preferably greater than or equal to 5 ⁇ 10 4 [ ⁇ cm] and less than or equal to 1 ⁇ 10 7 [ ⁇ cm], further preferably greater than or equal to 1 ⁇ 10 5 [ ⁇ cm] and less than or equal to 1 ⁇ 10 7 [ ⁇ cm].
  • an electron-accepting substance can be used for the layer 104 X.
  • a composite material containing a plurality of kinds of substances can be used for the layer 104 X. This can facilitate the injection of holes from the electrode 551 X, for example. Alternatively, the driving voltage of the light-emitting device 550 X can be reduced.
  • An organic compound or an inorganic compound can be used as the electron-accepting substance.
  • the electron-accepting substance can extract electrons from an adjacent hole-transport layer or a hole-transport material by the application of an electric field.
  • a compound having an electron-withdrawing group (a halogen or cyano group) can be used as the electron-accepting substance.
  • an electron-accepting organic compound is easily evaporated, which facilitates film deposition.
  • the productivity of the light-emitting device 550 X can be increased.
  • F4-TCNQ 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane
  • chloranil 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene
  • HAT-CN 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene
  • F6-TCNNQ 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane
  • 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, or the like can be used.
  • a compound in which electron-withdrawing groups are bonded to a condensed aromatic ring having a plurality of heteroatoms, such as HAT-CN, is particularly preferable because it is thermally stable.
  • a [3]radialene derivative having an electron-withdrawing group (in particular, a cyano group or a halogen group such as a fluoro group) has a very high electron-accepting property and thus is preferred.
  • ⁇ , ⁇ ′, ⁇ ′′-1,2,3-cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], ⁇ , ⁇ ′, ⁇ ′′-1,2,3-cyclopropanetriylidenetris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], ⁇ , ⁇ ′, ⁇ ′′-1,2,3-cyclopropanetriylidenetris[2,3,4,5,6-pentafluorobenzeneacetonitrile], or the like can be used.
  • a transition metal oxide such as a molybdenum oxide, a vanadium oxide, a ruthenium oxide, a tungsten oxide, or a manganese oxide can be used.
  • phthalocyanine-based compounds such as phthalocyanine (abbreviation: H 2 Pc); phthalocyanine-based complex compounds such as copper(II) phthalocyanine (abbreviation: CuPc); and compounds each having an aromatic amine skeleton such as 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) and N,N-bis[4-bis(3-methylphenyl)aminophenyl]-N,N-diphenyl-4,4′-diaminobiphenyl (abbreviation: DNTPD).
  • H 2 Pc phthalocyanine
  • CuPc phthalocyanine-based complex compounds
  • DNTPD diphenyl-4,4′-diaminobiphenyl
  • high molecular compounds such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (abbreviation: PEDOT/PSS), and the like can be used.
  • a composite material containing an electron-accepting substance and a hole-transport material can be used for the layer 104 X. Accordingly, not only a material having a high work function but also a material having a low work function can also be used for the electrode 551 X. Alternatively, a material used for the electrode 551 X can be selected from a wide range of materials regardless of its work function.
  • a compound having an aromatic amine skeleton, a carbazole derivative, an aromatic hydrocarbon, an aromatic hydrocarbon having a vinyl group, or a high molecular compound such as an oligomer, a dendrimer, or a polymer
  • a material having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or higher can be suitably used as the hole-transport material in the composite material.
  • a hole-transport material that can be used for the layer 112 X can be used for the composite material.
  • a substance having a relatively deep HOMO level can be suitably used for the hole-transport material in the composite material.
  • the HOMO level is preferably higher than or equal to ⁇ 5.7 eV and lower than or equal to ⁇ 5.4 eV. Accordingly, hole injection to the unit 103 X can be facilitated. Hole injection to the layer 112 X can be facilitated. The reliability of the light-emitting device 550 X can be increased.
  • N,N-di(p-tolyl)-N,N-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N-bis[4-bis(3-methylphenyl)aminophenyl]-N,N-diphenyl-4,4′-diaminobiphenyl (abbreviation: DNTPD), or 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B) can be used.
  • DTDPPA 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl
  • DNTPD N,N-bis[4-bis(3-methylpheny
  • carbazole derivative for example, 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9
  • aromatic hydrocarbon for example, 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenyl phenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: t
  • aromatic hydrocarbon having a vinyl skeleton for example, 4,4′-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi) or 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA) can be used.
  • DPVBi 4,4′-bis(2,2-diphenylvinyl)biphenyl
  • DPVPA 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene
  • poly(N-vinylcarbazole) (abbreviation: PVK)
  • poly(4-vinyltriphenylamine) (abbreviation: PVTPA)
  • PVTPA poly(N-(4- ⁇ N′-[4-(4-diphenylamino)phenyl]phenyl-N′-phenylamino ⁇ phenyl)methacrylamide]
  • PTPDMA poly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine]
  • Poly-TPD poly(N-vinylcarbazole)
  • PVK poly(4-vinyltriphenylamine)
  • PTPDMA poly[N-(4- ⁇ N′-[4-(4-diphenylamino)phenyl]phenyl-N′-phenylamino ⁇ phenyl)methacrylamide]
  • Poly-TPD poly[N,N′-bis(4-butylphenyl
  • a substance having any of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton can be suitably used as the hole-transport material in the composite material, for example.
  • a substance including any of the following can be used as the hole-transport material in the composite material: an aromatic amine having a substituent that includes a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine that includes a naphthalene ring, and an aromatic monoamine in which a 9-fluorenyl group is bonded to nitrogen of amine through an arylene group.
  • a composite material including an electron-accepting substance, a hole-transport material, and a fluoride of an alkali metal or a fluoride of an alkaline earth metal can be used as the hole-injection material.
  • a composite material in which the proportion of fluorine atoms is higher than or equal to 20% can be suitably used.
  • the refractive index of the layer 104 X can be reduced.
  • a layer with a low refractive index can be formed inside the light-emitting device 550 X.
  • the external quantum efficiency of the light-emitting device 550 X can be improved.
  • FIGS. 7 A and 7 B a structure of the light-emitting device 550 X of one embodiment of the present invention will be described with reference to FIGS. 7 A and 7 B .
  • the light-emitting device 550 X described in this embodiment includes the electrode 551 X, the electrode 552 X, the unit 103 X, and a layer 105 X.
  • the electrode 552 X includes a region overlapping with the electrode 551 X
  • the unit 103 X includes a region located between the electrode 551 X and the electrode 552 X.
  • the layer 105 X includes a region located between the unit 103 X and the electrode 552 X.
  • the structure described in Embodiment 2 can be employed for the unit 103 X.
  • a conductive material can be used for the electrode 552 X.
  • a single layer or a stack using a metal, an alloy, or a film containing a conductive compound can be used for the electrode 552 X.
  • the material that can be used for the electrode 551 X described in Embodiment 3 can be used for the electrode 552 X.
  • a material with a lower work function than the electrode 551 X can be suitably used for the electrode 552 X.
  • a material having a work function lower than or equal to 3.8 eV is preferably used.
  • an element belonging to Group 1 of the periodic table, an element belonging to Group 2 of the periodic table, a rare earth metal, or an alloy containing any of these elements can be used for the electrode 552 X.
  • an element such as lithium (Li) or cesium (Cs), an element such as magnesium (Mg), calcium (Ca), or strontium (Sr), an element such as europium (Eu) or ytterbium (Yb), or an alloy containing any of these elements such as an alloy of magnesium and silver or an alloy of aluminum and lithium can be used for the electrode 552 X.
  • an element such as lithium (Li) or cesium (Cs), an element such as magnesium (Mg), calcium (Ca), or strontium (Sr), an element such as europium (Eu) or ytterbium (Yb), or an alloy containing any of these elements such as an alloy of magnesium and silver or an alloy of aluminum and lithium can be used for the electrode 552 X.
  • An electron-injection material can be used for the layer 105 X, for example.
  • the layer 105 X can be referred to as an electron-injection layer.
  • an electron-donating substance can be used for the layer 105 X.
  • a material in which an electron-donating substance and an electron-transport material are combined can be used for the layer 105 X.
  • electride can be used for the layer 105 X. This can facilitate the injection of electrons from the electrode 552 X, for example.
  • a material having a low work function but also a material having a high work function can also be used for the electrode 552 X.
  • a material used for the electrode 552 X can be selected from a wide range of materials regardless of its work function.
  • the electrode 552 X aluminum (Al), silver (Ag), indium oxide-tin oxide (abbreviation: ITO), indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used for the electrode 552 X.
  • the driving voltage of the light-emitting device 550 X can be reduced.
  • an alkali metal, an alkaline earth metal, a rare earth metal, or a compound thereof can be used for the electron-donating substance.
  • an organic compound such as tetrathianaphthacene (abbreviation: TTN), nickelocene, or decamethylnickelocene can be used as the electron-donating substance.
  • lithium oxide lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, 8-hydroxyquinolinato-lithium (abbreviation: Liq), or the like
  • LiF lithium fluoride
  • CsF cesium fluoride
  • Liq 8-hydroxyquinolinato-lithium
  • CaF 2 calcium fluoride
  • a material composed of two or more kinds of substances can be used as the electron-injection material.
  • an electron-donating substance and an electron-transport material can be used for the composite material.
  • a material having an electron mobility higher than or equal to 1 ⁇ 10 ⁇ 7 cm 2 /Vs and lower than or equal to 5 ⁇ 10 ⁇ 5 cm 2 /Vs when the square root of the electric field strength [V/cm] is 600 can be suitably used as the electron-transport material.
  • the amount of electrons injected into the light-emitting layer can be controlled.
  • the light-emitting layer can be prevented from having excess electrons.
  • a metal complex or an organic compound having a ⁇ -electron deficient heteroaromatic ring skeleton can be used as the electron-transport material.
  • an electron-transport material that can be used for the layer 111 X can be used for the layer 105 X.
  • a material including a fluoride of an alkali metal in a microcrystalline state and an electron-transport material can be used for the composite material.
  • a material including a fluoride of an alkaline earth metal in a microcrystalline state and an electron-transport material can be used for the composite material.
  • a composite material including a fluoride of an alkali metal or an alkaline earth metal at 50 wt % or higher can be suitably used.
  • a composite material including an organic compound having a bipyridine skeleton can be suitably used.
  • the refractive index of the layer 105 X can be reduced.
  • the external quantum efficiency of the light-emitting device 550 X can be improved.
  • a composite material of a first organic compound including an unshared electron pair and a first metal can be used for the layer 105 X.
  • the sum of the number of electrons of the first organic compound and the number of electrons of the first metal is preferably an odd number.
  • the molar ratio of the first metal to 1 mol of the first organic compound is preferably greater than or equal to 0.1 and less than or equal to 10, further preferably greater than or equal to 0.2 and less than or equal to 2, still further preferably greater than or equal to 0.2 and less than or equal to 0.8.
  • the first organic compound including an unshared electron pair interacts with the first metal and thus can form a singly occupied molecular orbital (SOMO). Furthermore, in the case where electrons are injected from the electrode 552 X into the layer 105 X, a barrier therebetween can be reduced.
  • SOMO singly occupied molecular orbital
  • the layer 105 X can adopt a composite material that allows the spin density measured by an electron spin resonance (ESR) method to be preferably greater than or equal to 1 ⁇ 10 16 spins/cm 3 , further preferably greater than or equal to 5 ⁇ 10 16 spins/cm 3 , still further preferably greater than or equal to 1 ⁇ 10 17 spins/cm 3 .
  • ESR electron spin resonance
  • an electron-transport material can be used for the organic compound including an unshared electron pair.
  • a compound having an electron deficient heteroaromatic ring can be used.
  • a compound with at least one of a pyridine ring, a diazine ring (a pyrimidine ring, a pyrazine ring, and a pyridazine ring), and a triazine ring can be used. Accordingly, the driving voltage of the light-emitting device 550 X can be reduced.
  • the lowest unoccupied molecular orbital (LUMO) level of the organic compound having an unshared electron pair is preferably higher than or equal to ⁇ 3.6 eV and lower than or equal to ⁇ 2.3 eV.
  • the HOMO level and the LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-di(2-naphthyl)-4,7-diphenyl-1,10-phenanthroline
  • HATNA diquinoxalino[2,3-a:2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine
  • TmPPPyTz 2,2′-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline)
  • mPPhen2P 2,2′-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline
  • mPPhen2P 2,2′-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline
  • mPPhen2P 2,2′-(1,3-phen
  • copper phthalocyanine can be used for the organic compound including an unshared electron pair.
  • the number of electrons of the copper phthalocyanine is an odd number.
  • the number of electrons of the first organic compound including an unshared electron pair is an even number
  • a composite material of the first organic compound and the first metal that belongs to an odd-numbered group in the periodic table can be used for the layer 105 X.
  • manganese (Mn), which is a metal belonging to Group 7, cobalt (Co), which is a metal belonging to Group 9, copper (Cu), silver (Ag), and gold (Au), which are metals belonging to Group 11, aluminum (Al) and indium (In), which are metals belonging to Group 13 are odd-numbered groups in the periodic table.
  • elements belonging to Group 11 have a lower melting point than elements belonging to Group 7 or Group 9 and thus are suitable for vacuum evaporation.
  • Ag is preferable because of its low melting point.
  • the use of Ag for the electrode 552 X and the layer 105 X can increase the adhesion between the layer 105 X and the electrode 552 X.
  • a composite material of the first organic compound and the first metal that belongs to an even-numbered group in the periodic table can be used for the layer 105 X.
  • iron (Fe) which is a metal belonging to Group 8
  • a substance obtained by adding electrons at high concentration to an oxide where calcium and aluminum are mixed can be used, for example, as the electron-injection material.
  • FIG. 8 A is a cross-sectional view illustrating a structure of a light-emitting device of one embodiment of the present invention.
  • the light-emitting device 550 X described in this embodiment includes the electrode 551 X, the electrode 552 X, the unit 103 X, and an intermediate layer 106 X (see FIG. 8 A ).
  • the electrode 552 X includes a region overlapping with the electrode 551 X
  • the unit 103 X includes a region located between the electrode 551 X and the electrode 552 X.
  • the intermediate layer 106 X includes a region located between the unit 103 X and the electrode 552 X.
  • the intermediate layer 106 X has a function of supplying electrons to the anode side and supplying holes to the cathode side when voltage is applied.
  • the intermediate layer 106 X can be referred to as a charge-generation layer.
  • a hole-injection material that can be used for the layer 104 X described in Embodiment 3 can be used for the intermediate layer 106 X.
  • a composite material can be used for the intermediate layer 106 X.
  • a stacked film in which a film including the composite material and a film including a hole-transport material are stacked can be used for the intermediate layer 106 X. Note that the film including a hole-transport material is located between the film including the composite material and the cathode.
  • a stacked film in which a layer 106 X 1 and a layer 106 X 2 are stacked can be used for the intermediate layer 106 X.
  • the layer 106 X 1 includes a region located between the unit 103 X and the electrode 552 X and the layer 106 X 2 includes a region located between the unit 103 X and the layer 106 X 1 .
  • a hole-injection material that can be used for the layer 104 X described in Embodiment 3 can be used for the layer 106 X 1 .
  • a composite material can be used for the layer 106 X 1 .
  • a film having an electrical resistivity greater than or equal to 1 ⁇ 10 4 [ ⁇ cm] and less than or equal to 1 ⁇ 10 7 [ ⁇ cm] can be used as the layer 106 X 1 .
  • the electrical resistivity of the layer 106 X 1 is preferably greater than or equal to 5 ⁇ 10 4 [ ⁇ cm] and less than or equal to 1 ⁇ 10 7 [ ⁇ cm], further preferably greater than or equal to 1 ⁇ 10 5 [ ⁇ cm] and less than or equal to 1 ⁇ 10 7 [ ⁇ cm].
  • a material that can be used for the layer 105 X described in Embodiment 4 can be used for the layer 106 X 2 .
  • a stacked film in which the layer 106 X 1 , the layer 106 X 2 , and a layer 106 X 3 are stacked can be used for the intermediate layer 106 X.
  • the layer 106 X 3 includes a region sandwiched between the layer 106 X 1 and the layer 106 X 2 .
  • an electron-transport material can be used for the layer 106 X 3 .
  • the layer 106 X 3 can be referred to as an electron-relay layer.
  • a layer that is on the anode side and in contact with the layer 106 X 3 can be distanced from a layer that is on the cathode side and in contact with the layer 106 X 3 .
  • Interaction between the layer that is on the anode side and in contact with the layer 106 X 3 and the layer that is on the cathode side and in contact with the layer 106 X 3 can be reduced. Electrons can be smoothly supplied to the layer that is on the anode side and in contact with the layer 106 X 3 .
  • a substance whose LUMO level is between the LUMO level of the electron-accepting substance contained in the layer 106 X 1 and the LUMO level of the substance contained in the layer 106 X 2 can be suitably used for the layer 106 X 3 .
  • a material having a LUMO level in a range higher than or equal to ⁇ 5.0 eV, preferably higher than or equal to ⁇ 5.0 eV and lower than or equal to ⁇ 3.0 eV, can be used for the layer 106 X 3 .
  • a phthalocyanine-based material can be used for the layer 106 X 3 .
  • a phthalocyanine-based material can be used for the layer 106 X 3 .
  • copper(II) phthalocyanine (abbreviation: CuPc) or a metal complex having a metal-oxygen bond and an aromatic ligand can be used for the layer 106 X 3 .
  • FIG. 8 B is a cross-sectional view illustrating a structure of a light-emitting device of one embodiment of the present invention, which is different from that in FIG. 8 A .
  • the light-emitting device 550 X described in this embodiment includes the electrode 551 X, the electrode 552 X, the unit 103 X, the intermediate layer 106 X, and a unit 103 X 2 (see FIG. 8 B ).
  • the unit 103 X is located between the electrode 552 X and the electrode 551 X, and the intermediate layer 106 X is located between the electrode 552 X and the unit 103 X.
  • the unit 103 X 2 is located between the electrode 552 X and the intermediate layer 106 X.
  • the unit 103 X 2 has a function of emitting light ELX 2 .
  • the light-emitting device 550 X includes the stacked units between the electrode 551 X and the electrode 552 X.
  • the number of stacked units is not limited to two and may be three or more.
  • a structure including the stacked units located between the electrode 551 X and the electrode 552 X and the intermediate layer 106 X located between the units is referred to as a stacked light-emitting device or a tandem light-emitting device in some cases.
  • This structure enables high luminance emission while the current density is kept low. Reliability can be improved.
  • the driving voltage can be reduced in comparison with that of another light-emitting device with the same luminance.
  • the power consumption can be reduced.
  • the unit 103 X 2 includes a layer 111 X 2 , a layer 112 X 2 , and a layer 113 X 2 .
  • the layer 111 X 2 is located between the layer 112 X 2 and the layer 113 X 2 .
  • the structure that can be employed for the unit 103 X can be employed for the unit 103 X 2 .
  • the same structure as the unit 103 X can be employed for the unit 103 X 2 .
  • the structure that is different from the structure of the unit 103 X can be employed for the unit 103 X 2 .
  • the unit 103 X 2 can have a structure emitting light whose hue is different from that of light emitted from the unit 103 X.
  • a stack including the unit 103 X emitting red and green light and the unit 103 X 2 emitting blue light can be employed.
  • a light-emitting device emitting light of a desired color can be provided.
  • a light-emitting device emitting white light can be provided, for example.
  • the intermediate layer 106 X has a function of supplying electrons to one of the unit 103 X and the unit 103 X 2 and supplying holes to the other.
  • the intermediate layer 106 X described in Embodiment 5 can be used.
  • each of the electrode 551 X, the electrode 552 X, the unit 103 X, the intermediate layer 106 X, and the unit 103 X 2 can be formed by a dry process, a wet process, an evaporation method, a droplet discharging method, a coating method, a printing method, or the like.
  • a formation method may differ between components of the device.
  • the light-emitting device 550 X can be manufactured with a vacuum evaporation machine, an ink-jet machine, a coating machine such as a spin coater, a gravure printing machine, an offset printing machine, a screen printing machine, or the like.
  • the electrode can be formed by a wet process or a sol-gel method using a paste of a metal material.
  • an indium oxide-zinc oxide film can be formed by a sputtering method using a target obtained by adding indium zinc to indium oxide at a concentration higher than or equal to 1 wt % and lower than or equal to 20 wt %.
  • an indium oxide film containing tungsten oxide and zinc oxide can be formed by a sputtering method using a target containing, with respect to indium oxide, tungsten oxide at a concentration higher than or equal to 0.5 wt % and lower than or equal to 5 wt % and zinc oxide at a concentration higher than or equal to 0.1 wt % and lower than or equal to 1 wt %.
  • FIG. 9 A and FIGS. 10 A and 10 B structures of a display apparatus of one embodiment of the present invention will be described with reference to FIG. 9 A and FIGS. 10 A and 10 B .
  • FIG. 9 A is a front view illustrating a structure of a pixel 703 in a display apparatus of one embodiment of the present invention.
  • FIG. 10 A is a cross-sectional view taken along line P 2 -Q 2 in FIG. 9 A
  • FIG. is a cross-sectional view illustrating a structure different from that in FIG. 10 A .
  • the display apparatus described in this embodiment includes the pixel 703 .
  • the pixel 703 includes the light-emitting device 550 X, and a light-emitting device 550 Y (see FIG. 10 A ).
  • the light-emitting device 550 Y is adjacent to the light-emitting device 550 X.
  • the display apparatus includes the substrate 510 and the functional layer 520 .
  • the functional layer 520 includes an insulating film 521 , and the light-emitting devices 550 X and 550 Y are formed over the insulating film 521 .
  • the functional layer 520 is located between the substrate 510 and the light-emitting device 550 X.
  • the light-emitting device 550 X includes the electrode 551 X, the electrode 552 X, and the unit 103 X.
  • the electrode 552 X overlaps with the electrode 551 X, and the unit 103 X is located between the electrode 552 X and the electrode 551 X.
  • the light-emitting device 550 X includes the layer 104 X and the layer 105 X, the layer 104 X is located between the electrode 551 X and the unit 103 X, and the layer 105 X is located between the electrode 552 X and the unit 103 X.
  • the unit 103 X includes a layer 111 X, a layer 112 X, and a layer 113 X.
  • the structure described in any one of Embodiments 2 to 6 can be used as the light-emitting device 550 X.
  • the light-emitting device 550 Y includes an electrode 551 Y, an electrode 552 Y, and a unit 103 Y.
  • the electrode 552 Y overlaps with the electrode 551 Y, and the unit 103 Y is located between the electrode 552 Y and the electrode 551 Y.
  • the light-emitting device 550 Y includes a layer 104 Y and a layer 105 Y.
  • the layer 104 Y is located between the unit 103 Y and the electrode 551 Y, and the layer 105 Y is located between the electrode 552 Y and the unit 103 Y.
  • the electrode 551 Y is adjacent to the electrode 551 X, and the electrode 551 Y and the electrode 551 X are provided so that a space 551 XY is positioned therebetween.
  • part of a structure that can be employed as a structure of the light-emitting device 550 X can be employed as a structure of the light-emitting device 550 Y.
  • part of a conductive film that can be used for the electrode 552 X can be used for the electrode 552 Y.
  • a structure that can be employed for the electrode 551 X can be employed for the electrode 551 Y.
  • a structure that can be used for the layer 104 X and a structure that can be used for the layer 105 X can be respectively employed for the layer 104 Y and the layer 105 Y.
  • part of the shared components can be formed in one step.
  • the manufacturing process can be simplified.
  • the light-emitting device 550 Y can have a structure emitting light whose hue is the same as that of light emitted from the light-emitting device 550 X.
  • both the light-emitting device 550 X and the light-emitting device 550 Y may emit light including blue and green light.
  • a color conversion layer is provided to overlap with the light-emitting device 550 X, whereby blue light can be converted into light of a predetermined hue.
  • Another coloring layer is provided to overlap with the light-emitting device 550 Y, whereby light including blue and green light can be converted into light of another predetermined hue. For example, the light including blue and green light can be converted into green light or red light.
  • a color conversion layer is provided to overlap with the light-emitting device 550 X, whereby blue light can be extracted from light including blue and green light.
  • Another coloring layer is provided to overlap with the light-emitting device 550 Y, whereby green light can be extracted from light including blue and green light.
  • both the light-emitting device 550 X and the light-emitting device 550 Y may emit blue light.
  • a color conversion layer is provided to overlap with the light-emitting device 550 X, whereby blue light can be converted into light of a predetermined hue.
  • Another coloring layer is provided to overlap with the light-emitting device 550 Y, whereby blue light can be converted into light of another predetermined hue. Blue light can be converted into green light or red light, for example.
  • both the light-emitting device 550 X and the light-emitting device 550 Y may emit white light.
  • a coloring layer is provided to overlap with the light-emitting device 550 X, whereby light of a predetermined hue can be extracted from white light.
  • Another coloring layer is provided to overlap with the light-emitting device 550 Y, whereby light of another predetermined hue can be extracted from white light.
  • the light-emitting device 550 Y can have a structure emitting light whose hue is different from that of light emitted from the light-emitting device 550 X.
  • the hue of light ELY emitted from the unit 103 Y can be differentiated from that of the light ELX.
  • the pixel 703 described in this embodiment includes an insulating film 528 (see FIG. 10 A ).
  • the insulating film 528 has openings; one opening overlaps with the electrode 551 X and the other opening overlaps with the electrode 551 Y.
  • the insulating film 528 overlaps with the space 551 XY.
  • the space 551 XY located between the electrode 551 X and the electrode 551 Y has a groove-like shape, for example. Thus, a step is formed along the groove. A film deposited over the groove is partly split or thinned between the space 551 XY and the electrode 551 X.
  • a split or thinned portion is formed along the step in a region 104 XY located between the layer 104 X and the layer 104 Y.
  • the display apparatus described in this embodiment includes the pixel 703 .
  • the pixel 703 includes the light-emitting device 550 X and the light-emitting device 550 Y (see FIG. 10 B ).
  • the light-emitting device 550 Y is adjacent to the light-emitting device 550 X.
  • the display apparatus described with reference to FIG. 10 B is different from the display device described with reference to FIG. 10 A in that part or the whole of the structure of the light-emitting device 550 X or the light-emitting device 550 Y is removed from a portion overlapping with the space 551 XY and a film 529 _ 1 , a film 529 _ 2 , and a film 529 _ 3 are provided instead of the insulating film 528 .
  • Different parts will be described in detail below, and the above description is referred to for parts having the same structure as the above.
  • a device formed using a metal mask or a fine metal mask may be referred to as a device having a metal mask (MM) structure.
  • a device formed without using a metal mask or an FMM is sometimes referred to as a device having a metal maskless (MML) structure.
  • the film 529 _ 1 has openings; one opening overlaps with the electrode 551 X and the other opening overlaps with the electrode 551 Y (see FIG. 10 B ).
  • the film 529 _ 1 further has an opening overlapping with the space 551 XY.
  • a film containing a metal, a metal oxide, an organic material, or an inorganic insulating material can be used as the film 529 _ 1 .
  • a light-blocking metal film can be used. Accordingly, light with which the components are irradiated during the processing step can be blocked, resulting in suppression of a phenomenon in which the characteristics of the light-emitting device are degraded by the light.
  • the film 529 _ 2 has openings; one opening overlaps with the electrode 551 X and the other opening overlaps with the electrode 551 Y.
  • the film 529 _ 2 overlaps with the space 551 XY.
  • the film 529 _ 2 includes a region in contact with the layer 104 X and the unit 103 X.
  • the film 529 _ 2 includes a region in contact with the layer 104 Y and the unit 103 Y.
  • the film 529 _ 2 includes a region in contact with the insulating film 521 .
  • the film 529 _ 2 can be formed by an atomic layer deposition (ALD) method, for example. Thus, a film with favorable coverage can be formed.
  • ALD atomic layer deposition
  • a metal oxide film or the like can be used as the film 529 _ 2 .
  • Aluminum oxide can be used, for example.
  • the film 529 _ 3 includes openings; an opening 529 _ 3 X overlaps with the electrode 551 X, and an opening 529 _ 3 Y overlaps with the electrode 551 Y. A groove formed in a region overlapping with the space 551 XY is filled with the film 529 _ 3 .
  • the film 529 _ 3 can be formed using a photosensitive resin, for example. Specifically, an acrylic resin or the like can be used.
  • the layer 104 X can be electrically isolated from the layer 104 Y, for example.
  • current flowing through the region 104 XY can be suppressed, for example.
  • a phenomenon in which the light-emitting device 550 Y that is adjacent to the light-emitting device 550 X unintentionally emits light in accordance with the operation of the light-emitting device 550 X can be suppressed.
  • a step formed between a top surface of the unit 103 X and a top surface of the unit 103 Y can be reduced in size. Occurrence of a phenomenon in which a split or thinned portion due to the step is formed between the electrode 552 X and the electrode 552 Y can be suppressed.
  • a continuous conductive film can be used for the electrode 552 X and the electrode 552 Y.
  • part or the whole of the structure that can be employed for the light-emitting device 550 X or the light-emitting device 550 Y) can be removed from a portion overlapping with the space 551 XY by using photolithography technology, for example.
  • a first film to be the unit 103 Y later is formed over the space 551 XY.
  • a second film to be the film 529 _ 1 is formed over the first film, for example.
  • an opening portion overlapping with the space 551 XY is formed in the second film by a photolithography method.
  • part of the first film is removed using the second film as a resist mask.
  • the first film in a region overlapping with the space 551 XY is removed by a dry etching method.
  • the first film can be removed with use of an oxygen-containing gas. Accordingly, a groove-like structure is formed in the region overlapping with the space 551 XY.
  • a third film to be the film 529 _ 2 is formed over the second film by an atomic layer deposition (ALD) method.
  • ALD atomic layer deposition
  • the film 529 _ 3 is formed with use of a photosensitive polymer, for example. Accordingly, a groove-like structure formed in the region overlapping with the space 551 XY is filled with the film 529 _ 3 .
  • a seventh step an opening portion overlapping with the electrode 551 Y is formed in the third film and the second film by an etching method, whereby the film 529 _ 2 and the film 529 _ 1 are formed.
  • the layer 105 Y is formed over the unit 103 Y and the electrode 552 Y is formed over the layer 105 Y.
  • FIG. 9 A is a front view illustrating a structure of the pixel 703 of one embodiment of the present invention.
  • FIG. 11 A is a cross-sectional view taken along line P 3 -Q 3 in FIG. 9 B
  • FIG. 11 B is a cross-sectional view illustrating a structure different from that in FIG. 11 A .
  • the display apparatus described in this embodiment includes the pixel 703 .
  • the pixel 703 includes the light-emitting device 550 X and a photoelectric conversion device 550 S (see FIG. 11 A ).
  • the photoelectric conversion device 550 S is adjacent to the light-emitting device 550 X.
  • the display apparatus includes the substrate 510 and the functional layer 520 .
  • the functional layer 520 includes the insulating film 521 , and the light-emitting device 550 X and the photoelectric conversion device 550 S are formed over the insulating film 521 .
  • the functional layer 520 is located between the substrate 510 and the light-emitting device 550 X.
  • the light-emitting device 550 X includes the electrode 551 X, the electrode 552 X, and the unit 103 X.
  • the electrode 552 X overlaps with the electrode 551 X, and the unit 103 X is located between the electrode 552 X and the electrode 551 X.
  • the light-emitting device 550 X includes the layer 104 X and the layer 105 X, the layer 104 X is located between the electrode 551 X and the unit 103 X, and the layer 105 X is located between the electrode 552 X and the unit 103 X.
  • the light-emitting device 550 X described in any one of Embodiments 2 to 6 can be used as the light-emitting device 550 X in this embodiment.
  • the photoelectric conversion device 550 S includes an electrode 551 S, an electrode 552 S, and a unit 103 S.
  • the electrode 552 S overlaps with the electrode 551 S, and the unit 103 S is located between the electrode 551 S and the electrode 552 S.
  • the photoelectric conversion device 550 S includes a layer 104 S and a layer 105 S.
  • the layer 104 S is located between the unit 103 S and the electrode 551 S, and the layer 105 S is located between the electrode 552 S and the unit 103 S.
  • the electrode 551 S is adjacent to the electrode 551 X, and the electrode 551 S and the electrode 551 X are provided so that a space 551 XS is positioned therebetween.
  • part of a structure that can be employed as a structure of the light-emitting device 550 X described in any one of Embodiments 2 to 6 can be employed as a structure of the photoelectric conversion device 550 S.
  • part of a conductive film that can be used for the electrode 552 X can be used for the electrode 552 S.
  • a structure that can be employed for the electrode 551 X can be employed for the electrode 551 S.
  • a structure that can be used for the layer 104 X and a structure that can be used for the layer 105 X can be respectively employed for the layer 104 S and the layer 105 S.
  • part of the structure can be employed in common.
  • the manufacturing process can be simplified.
  • the photoelectric conversion device 550 S is different from the light-emitting device 550 X in that the unit 103 S having a function of converting light into current is included instead of the unit 103 X having a function of emitting light.
  • the unit 103 S having a function of converting light into current is included instead of the unit 103 X having a function of emitting light.
  • Different parts will be described in detail below, and the above description is referred to for parts having the same structure as the above.
  • the unit 103 S has a single-layer structure or a stacked-layer structure.
  • the unit 103 S can include, for example, a layer selected from functional layers such as a photoelectric conversion layer, a hole-transport layer, an electron-transport layer, and a carrier-blocking layer, in addition to the photoelectric conversion layer.
  • the unit 103 S includes a layer 114 S, a layer 112 S, and a layer 113 S, for example (see FIG. 11 A ).
  • the layer 114 S is sandwiched between the layer 112 S and the layer 113 S. Note that the layer 112 S is sandwiched between the electrode 551 S and the layer 114 S, and the layer 113 S is sandwiched between the electrode 552 S and the layer 114 S.
  • the unit 103 S has a function of absorbing light hv and supplying electrons to one electrode and supplying holes to the other.
  • the unit 103 S supplies holes to the electrode 551 S and supplies electrons to the electrode 552 S.
  • part of a structure that can be employed as a structure of the unit 103 X described in Embodiment 2 can be employed as a structure of the unit 103 S.
  • a structure that can be employed for the layer 112 X and a structure that can be employed for the layer 113 X can be respectively employed for the layer 112 S and the layer 113 S.
  • part of the structure can be employed in common.
  • the manufacturing process can be simplified.
  • the layer 114 S can be referred to as a photoelectric conversion layer.
  • the layer 114 S absorbs the light hv, supplies electrons to a layer in contact with one side of the layer 114 S, and supplies holes to a layer in contact with the other side of the layer 114 S.
  • the layer 114 S supplies holes to the layer 112 S, and supplies electrons to the layer 113 S.
  • a material that can be used for an organic solar cell can be used for the layer 114 S.
  • an electron-accepting material and an electron-donating material can be used for the layer 114 S.
  • a fullerene derivative or a non-fullerene electron acceptor can be used, for example.
  • a C 60 fullerene, a C 70 fullerene, [6,6]-phenyl-C 71 -butyric acid methyl ester (abbreviation: PC71BM), [6,6]-phenyl-C 61 -butyric acid methyl ester (abbreviation: PC61BM), 1′,1′′,4′,4′′-tetrahydro-di[1,4]methanonaphthaleno[1,2:2′,3′,56,60:2′′,3′′][5,6]fullerene-C 60 (abbreviation: ICBA), or the like can be used.
  • PC71BM [6,6]-phenyl-C 61 -butyric acid methyl ester
  • PC61BM 1′,1′′,4′,4′′-tetrahydro-di[1,4]methanonaphthaleno[1,2:2′,3′,56,60:2′′,3′′][5,6]fullerene-C
  • non-fullerene electron acceptor a perylene derivative, a compound having a dicyanomethyleneindanone group, or the like can be used.
  • a perylene derivative a compound having a dicyanomethyleneindanone group, or the like
  • Me-PTCDI N,N′-dimethyl-3,4,9,10-perylenetetracarboxylic diimide
  • a phthalocyanine compound As the electron-donating material, a phthalocyanine compound, a tetracene derivative, a quinacridone derivative, a rubrene derivative, or the like can be used.
  • CuPc copper(II) phthalocyanine
  • SnPc tin(II) phthalocyanine
  • ZnPc zinc phthalocyanine
  • DBP tetraphenyldibenzoperiflanthene
  • the layer 114 S can have a single-layer structure or a stacked-layer structure, for example. Specifically, the layer 114 S can have a bulk heterojunction structure. Alternatively, the layer 114 S can have a heterojunction structure.
  • a mixed material containing an electron-accepting material and an electron-donating material can be used for the layer 114 S, for example (see FIG. 11 A ). Note that a structure in which such a mixed material containing an electron-accepting material and an electron-donating material is used for the layer 114 S can be referred to as a bulk heterojunction structure.
  • a mixed material containing a C 70 fullerene and DBP can be used for the layer 114 S.
  • a layer 114 N and a layer 114 P can be used for the layer 114 S (see FIG. 11 B ).
  • the layer 114 N includes a region between one electrode and the layer 114 P, and the layer 114 P includes a region between the layer 114 N and the other electrode.
  • the layer 114 N includes a region between the electrode 552 S and the layer 114 P, and the layer 114 P includes a region between the layer 114 N and the electrode 551 S.
  • An n-type semiconductor can be used for the layer 114 N.
  • Me-PTCDI can be used for the layer 114 N.
  • a p-type semiconductor can be used for the layer 114 P.
  • rubrene can be used for the layer 114 P.
  • the photoelectric conversion device 550 S in which the layer 114 P is in contact with the layer 114 N can be referred to as a pn-junction photodiode.
  • FIG. 12 is a perspective view illustrating a structure of a display module 280 .
  • the display module 280 includes a display apparatus 100 and one of an FPC 290 and a connector.
  • the FPC 290 is given a data signal, a power supply potential, or the like from the outside and supplies the data signal, the power supply potential, or the like to the display apparatus 100 .
  • An IC may be mounted on the FPC 290 .
  • the connector is a mechanical component for electrical connection through a conductor, and the conductor can electrically connect the display apparatus 100 to a component to be connected.
  • the FPC 290 can be used as the conductor.
  • the connector can detach the display apparatus 100 from the connected component.
  • FIG. 13 is a cross-sectional view illustrating a structure of a display apparatus 100 A.
  • the display apparatus 100 A can be used for the display apparatus 100 of the display module 280 .
  • a substrate 301 corresponds to a substrate 71 in FIG. 12 .
  • the display apparatus 100 A includes the substrate 301 , a transistor 310 , an element isolation layer 315 , an insulating layer 261 , a capacitor 240 , an insulating layer 255 a , an insulating layer 255 b , and a plurality of light-emitting devices 61 W.
  • the insulating layer 261 is provided over the substrate 301 , and the transistor 310 is located between the substrate 301 and the insulating layer 261 .
  • the insulating layer 255 a is provided over the insulating layer 261 .
  • the capacitor 240 is located between the insulating layer 261 and the insulating layer 255 a .
  • the insulating layer 255 a is located between the light-emitting device 61 W and the capacitor 240 .
  • the transistor 310 includes a conductive layer 311 , a pair of low-resistance regions 312 , an insulating layer 313 , and an insulating layer 314 .
  • a channel of the transistor 310 is formed in part of the substrate 301 .
  • the conductive layer 311 functions as a gate electrode.
  • the insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer.
  • the substrate 301 is provided with the pair of low-resistance regions 312 doped with impurities. Note that such regions function as a source and a drain.
  • the side surface of the conductive layer 311 is covered with the insulating layer 314 .
  • the element isolation layer 315 is embedded in the substrate 301 and located between two transistors 310 adjacent to each other.
  • the capacitor 240 includes a conductive layer 241 , a conductive layer 245 , and an insulating layer 243 .
  • the insulating layer 243 is located between the conductive layer 241 and the conductive layer 245 .
  • the conductive layer 241 functions as one electrode of the capacitor 240
  • the conductive layer 245 functions as the other electrode of the capacitor 240
  • the insulating layer 243 functions as a dielectric of the capacitor 240 .
  • the conductive layer 241 is provided over the insulating layer 261 and is embedded in an insulating layer 254 .
  • the conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 through a plug 275 embedded in the insulating layer 261 .
  • the insulating layer 243 is provided to cover the conductive layer 241 .
  • the conductive layer 245 overlaps with the conductive layer 241 with the insulating layer 243 therebetween.
  • An insulating layer 255 includes the insulating layer 255 a , the insulating layer 255 b , and an insulating layer 255 c .
  • the insulating layer 255 b is located between the insulating layer 255 a and the insulating layer 255 c.
  • the light-emitting device 61 W is provided over the insulating layer 255 c .
  • the light-emitting device described in any one of Embodiments 2 to 6 can be used as the light-emitting device 61 W.
  • the light-emitting device 61 W can emit light including blue light.
  • the light-emitting device 61 W can emit blue light, light including blue and green light, or white light.
  • the light-emitting device 61 W includes a conductive layer 171 and an EL layer 172 W.
  • the EL layer 172 W covers the top and side surfaces of the conductive layer 171 .
  • a sacrificial layer 270 is located over the EL layer 172 W.
  • the conductive layer 171 is electrically connected to one of the source and the drain of the transistor 310 through a plug 256 embedded in the insulating layer 243 , the insulating layer 255 a , the insulating layer 255 b , and the insulating layer 255 c , the conductive layer 241 embedded in the insulating layer 254 , and the plug 275 embedded in the insulating layer 261 .
  • the top surface of the insulating layer 255 c and the top surface of the plug 256 are level with or substantially level with each other. Any of a variety of conductive materials can be used for the plugs.
  • a protective layer 271 and an insulating layer 278 are located between adjacent light-emitting devices 61 W, and the insulating layer 278 is provided over the protective layer 271 .
  • a protective layer 273 is provided over the light-emitting device 61 W.
  • a bonding layer 122 attaches the protective layer 273 and a substrate 120 to each other.
  • the substrate 120 corresponds to the substrate 73 in FIG. 12 .
  • a light-blocking layer can be provided for the surface of the substrate 120 on the bonding layer 122 side.
  • a variety of optical members can be provided outside the substrate 120 .
  • a film can be used as the substrate; a film with a low water absorption rate is particularly preferable.
  • the water absorption rate is preferably lower than or equal to 1%, further preferably lower than or equal to 0.1%.
  • a change in size of the film can be inhibited.
  • generation of wrinkles or the like can be inhibited.
  • a change in shape of the display apparatus can be inhibited.
  • a polarizing plate for example, a polarizing plate, a retardation plate, a light diffusion layer (e.g., a diffusion film), an anti-reflection layer, a light-condensing film, or the like can be used as the optical member.
  • a light diffusion layer e.g., a diffusion film
  • an anti-reflection layer e.g., a light-condensing film, or the like
  • a highly optically isotropic material in other words, a material with a low birefringence index is used for the substrate and a circular polarizing plate is provided to overlap with the display apparatus.
  • a material that has an absolute value of a retardation (phase difference) of nm or less preferably 20 nm or less, further preferably 10 nm or less.
  • a triacetyl cellulose (TAC, also referred to as cellulose triacetate) film, a cycloolefin polymer (COP) film, a cycloolefin copolymer (COC) film, or an acrylic resin film can be used as a highly optically isotropic film.
  • an antistatic film inhibiting the attachment of dust, a water repellent film inhibiting the attachment of stain, a hard coat film inhibiting generation of a scratch caused by the use, an impact-absorbing layer, or the like may be provided as a surface protective layer on the outer surface of the substrate 120 .
  • a glass layer, a silica layer (SiO x layer), diamond like carbon (DLC), aluminum oxide (AlO x ), a polyester-based material, a polycarbonate-based material, or the like can be used for the surface protective layer.
  • a material having a high visible light transmittance can be suitably used for the surface protective layer.
  • a material having high hardness can be suitably used for the surface protective layer.
  • the display apparatus 100 A includes a layer 183 R, a layer 183 G, and a layer 183 B.
  • the layer 183 R includes a region overlapping with one light-emitting device 61 W
  • the layer 183 G includes a region overlapping with another light-emitting device 61 W
  • the layer 183 B includes a region overlapping with another light-emitting device 61 W.
  • the layer 183 R includes a layer CFR 1 , and the layer CFR 1 contains a color conversion material.
  • the layer 183 G includes a layer CFG 1 , and the layer CFG 1 contains a color conversion material.
  • the layer 183 B contains a color conversion material and functions as a color filter.
  • the layer 183 R can convert light emitted by the light-emitting device 61 W into red light and transmit the light
  • the layer 183 G can convert light emitted by the light-emitting device 61 W into green light and transmit the light
  • the layer 183 B can transmit blue light included in light emitted by the light-emitting device 61 W.
  • FIG. 14 is a cross-sectional view illustrating a structure of a display apparatus 100 C.
  • the display apparatus 100 C can be used as the display apparatus 100 of the display module 280 , for example (see FIG. 12 ). Note that in the following description of display apparatuses, the description of portions similar to those of the above-described display apparatuses may be omitted.
  • the display apparatus 100 C includes a substrate 301 B and a substrate 301 A.
  • the display apparatus 100 C includes a transistor 310 B, the capacitor 240 , the plurality of light-emitting devices 61 W, and a transistor 310 A.
  • a channel of the transistor 310 A is formed in part of the substrate 301 A and a channel of the transistor 310 B is formed in part of the substrate 301 B.
  • An insulating layer 345 is in contact with the bottom surface of the substrate 301 B, and an insulating layer 346 is positioned over the insulating layer 261 .
  • an inorganic insulating film that can be used as the protective layer 273 can be used as the insulating layers 345 and 346 .
  • the insulating layers 345 and 346 function as protective layers and can inhibit impurities from being diffused into the substrates 301 B and 301 A.
  • a plug 343 penetrates the substrate 301 B and the insulating layer 345 .
  • An insulating layer 344 covers the side surface of the plug 343 .
  • the inorganic insulating film that can be used as the protective layer 273 can be used as the insulating layer 344 .
  • the insulating layer 344 functions as a protective layer and can inhibit impurities from being diffused into the substrate 301 B.
  • a conductive layer 342 is located between the insulating layer 345 and the insulating layer 346 .
  • the conductive layer 342 is embedded in an insulating layer 335 , and a plane formed by the conductive layer 342 and the insulating layer 335 is preferably flat. Note that the conductive layer 342 is electrically connected to the plug 343 .
  • a conductive layer 341 is located between the insulating layer 346 and the insulating layer 335 . It is preferable that the conductive layer 341 be embedded in an insulating layer 336 and a plane formed by the conductive layer 341 and the insulating layer 336 be flat. The conductive layer 341 is bonded to the conductive layer 342 . Thus, the substrate 301 A is electrically connected to the substrate 301 B.
  • the conductive layers 341 and 342 are preferably formed using the same conductive material.
  • a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W or a metal nitride film containing any of the above elements as a component (e.g., a titanium nitride film, a molybdenum nitride film, or a tungsten nitride film).
  • Copper is particularly preferably used for the conductive layers 341 and 342 . In that case, it is possible to employ copper-to-copper (Cu-to-Cu) direct bonding (a technique for achieving electrical continuity by connecting copper (Cu) pads).
  • FIG. 15 is a cross-sectional view illustrating a structure of a display apparatus 100 D.
  • the display apparatus 100 D can be used as the display apparatus 100 of the display module 280 , for example (see FIG. 12 ).
  • the display apparatus 100 D includes a bump 347 , and the bump 347 bonds the conductive layer 341 to the conductive layer 342 .
  • the bump 347 electrically connects the conductive layer 341 to the conductive layer 342 .
  • the bump 347 can be formed using a conductive material containing gold (Au), nickel (Ni), indium (In), tin (Sn), or the like, for example. Solder can be used for the bump 347 , for example.
  • the display apparatus 100 D includes a bonding layer 348 .
  • the bonding layer 348 attaches the insulating layer 345 to the insulating layer 346 .
  • FIG. 16 is a cross-sectional view illustrating a structure of a display apparatus 100 E.
  • the display apparatus 100 E can be used as the display apparatus 100 of the display module 280 , for example (see FIG. 12 ).
  • a substrate 331 corresponds to the substrate 71 in FIG. 12 .
  • An insulating substrate or a semiconductor substrate can be used as the substrate 331 .
  • the display apparatus 100 E includes a transistor 320 . Note that the display apparatus 100 E is different from the display apparatus 100 A in that the transistor is an OS transistor.
  • An insulating layer 332 is provided over the substrate 331 .
  • a film in which hydrogen or oxygen is less likely to be diffused than in a silicon oxide film can be used as the insulating layer 332 .
  • an aluminum oxide film, a hafnium oxide film, a silicon nitride film, or the like can be used as the insulating layer 332 .
  • the insulating layer 332 can prevent impurities such as water or hydrogen from being diffused from the substrate 331 into the transistor 320 .
  • oxygen can be prevented from being released from a semiconductor layer 321 to the insulating layer 332 side.
  • the transistor 320 includes the semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .
  • the conductive layer 327 is provided over the insulating layer 332 and functions as a first gate electrode of the transistor 320 .
  • the insulating layer 326 covers the conductive layer 327 . Part of the insulating layer 326 functions as a first gate insulating layer.
  • the insulating layer 326 includes an oxide insulating film at least in a region in contact with the semiconductor layer 321 . Specifically, a silicon oxide film or the like is preferably used.
  • the insulating layer 326 has a flat top surface.
  • the semiconductor layer 321 is provided over the insulating layer 326 . A metal oxide film having semiconductor characteristics can be used as the semiconductor layer 321 .
  • the pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 , and functions as a source electrode and a drain electrode.
  • An insulating layer 328 covers the top and side surfaces of the pair of conductive layers 325 , the side surface of the semiconductor layer 321 , and the like.
  • An insulating layer 264 is provided over the insulating layer 328 and functions as an interlayer insulating layer.
  • the insulating layers 328 and 264 have an opening reaching the semiconductor layer 321 .
  • an insulating film similar to the insulating layer 332 can be used as the insulating layer 328 .
  • the insulating layer 328 can prevent impurities such as water and hydrogen from being diffused from the insulating layer 264 into the semiconductor layer 321 . Furthermore, oxygen can be prevented from being released from the semiconductor layer 321 .
  • the insulating layer 323 is in contact with the side surfaces of the insulating layers 264 and 328 and the conductive layer 325 and the top surface of the semiconductor layer 321 inside the opening.
  • the conductive layer 324 is embedded and in contact with the insulating layer 323 .
  • the conductive layer 324 has a top surface subjected to planarization treatment, and is level with or substantially level with the top surface of the insulating layer 323 and the top surface of the insulating layer 264 .
  • the conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.
  • An insulating layer 329 covers the conductive layer 324 and the insulating layers 323 and 264 .
  • An insulating layer 265 is provided over the insulating layer 329 and functions as an interlayer insulating layer.
  • an insulating film similar to the insulating layers 328 and 332 can be used as the insulating layer 329 .
  • impurities such as water or hydrogen can be prevented from being diffused from the insulating layer 265 into the transistor 320 , for example.
  • a plug 274 is embedded in the insulating layers 265 , 329 , 264 , and 328 and is electrically connected to one of the pair of conductive layers 325 .
  • the plug 274 includes a conductive layer 274 a and a conductive layer 274 b .
  • the conductive layer 274 a is in contact with each of the side surfaces of openings in the insulating layers 265 , 329 , 264 , and 328 .
  • the conductive layer 274 a covers part of the top surface of the conductive layer 325 .
  • the conductive layer 274 b is in contact with the top surface of the conductive layer 274 a .
  • a conductive material in which hydrogen and oxygen are less likely to be diffused can be suitably used for the conductive layer 274 a.
  • FIG. 17 is a cross-sectional view illustrating a structure of a display apparatus 100 F.
  • the display apparatus 100 F has a structure in which a transistor 320 A and a transistor 320 B are stacked.
  • Each of the transistors 320 A and 320 B includes an oxide semiconductor and a channel formed in the oxide semiconductor.
  • the structure of the display apparatus 100 F is not limited to the stacked structure of two transistors, and may be a structure in which three or more transistors are stacked, for example.
  • the structures of the transistor 320 A and the peripheral components are the same as those of the transistor 320 and the peripheral components of the display apparatus 100 E.
  • the structures of the transistor 320 B and the peripheral components are the same as those of the transistor 320 and the peripheral components of the display apparatus 100 E.
  • FIG. 18 is a cross-sectional view illustrating a structure of a display apparatus 100 G.
  • the display apparatus 100 G has a structure in which the transistor 310 and the transistor 320 are stacked.
  • the channel of the transistor 310 is formed in the substrate 301 .
  • the transistor 320 includes an oxide semiconductor and the channel formed in the oxide semiconductor.
  • the insulating layer 261 covers the transistor 310 and a conductive layer 251 is provided over the insulating layer 261 .
  • An insulating layer 262 covers the conductive layer 251 and a conductive layer 252 is provided over the insulating layer 262 .
  • An insulating layer 263 and the insulating layer 332 covers the conductive layer 252 .
  • the conductive layer 251 and the conductive layer 252 each function as a wiring.
  • the transistor 320 is provided over the insulating layer 332 and the insulating layer 265 covers the transistor 320 .
  • the capacitor 240 is provided over the insulating layer 265 and is electrically connected to the transistor 320 through the plug 274 .
  • the transistor 320 can be used as a transistor included in a pixel circuit.
  • the transistor 310 can be used as a transistor included in a pixel circuit or for a driver circuit (e.g., a gate driver circuit or a source driver circuit) for driving the pixel circuit.
  • the transistor 310 and the transistor 320 can be used for a variety of circuits such as an arithmetic circuit and a memory circuit.
  • a driver circuit can be provided directly under the light-emitting device, for example.
  • the display apparatus can be downsized as compared to the case where a driver circuit is provided around a display region.
  • FIG. 19 is a perspective view illustrating a structure of a display module.
  • the display module includes a display apparatus 100 H, an integrated circuit (IC), and one of an FPC 177 and a connector.
  • the display apparatus 100 H is electrically connected to an IC 176 and the FPC 177 .
  • the FPC 177 is supplied with a signal and electric power from the outside and supplies the signal and the electric power to the display apparatus 100 H.
  • a connector is a mechanical component for electrical connection through a conductor, and the conductor can electrically connect the display apparatus 100 H to a component to be connected.
  • the FPC 177 can be used as the conductor.
  • the connector can detach the display apparatus 100 H from the connected component.
  • the display module includes the IC 176 .
  • the IC 176 can be provided for a substrate 14 b by a chip on glass (COG) method.
  • the IC 176 can be provided for an FPC by a chip on film (COF) method, for example.
  • COG chip on glass
  • F chip on film
  • a gate driver circuit, a source driver circuit, or the like can be used as the IC 176 .
  • FIG. 20 A is a cross-sectional view illustrating a structure of the display apparatus 100 H.
  • the display apparatus 100 H includes a display portion 37 b , a connection portion 140 , a circuit 164 , a wiring 165 , and the like.
  • the display apparatus 100 H includes a substrate 16 b and the substrate 14 b , which are bonded to each other.
  • the display apparatus 100 H includes one or more connection portions 140 .
  • the connection portion(s) can be provided outside the display portion 37 b .
  • the connection portion can be provided along one side of the display portion 37 b .
  • the connection portion(s) can be provided along a plurality of sides, for example, the connection portion(s) can be provided to surround four sides.
  • a common electrode of a light-emitting device is electrically connected to a conductive layer, which supplies a predetermined potential to the common electrode.
  • the wiring 165 is supplied with a signal or electric power from the FPC 177 or the IC 176 .
  • the wiring 165 supplies a signal and electric power to the display portion 37 b and the circuit 164 .
  • a gate driver circuit can be used as the circuit 164 .
  • the display apparatus 100 H includes the substrate 14 b , the substrate 16 b , a transistor 201 , a transistor 205 , a plurality of light-emitting devices 63 W, and the like (see FIG. 20 A ).
  • the light-emitting device 63 W can emit light including blue light.
  • the light-emitting device 63 W can emit blue light, light including blue and green light, or white light.
  • the display apparatus 100 H includes the layer 183 R, the layer 183 G, and the layer 183 B.
  • the layer 183 R includes a region overlapping with one light-emitting device 63 W
  • the layer 183 G includes a region overlapping with another light-emitting device 63 W
  • the layer 183 B includes a region overlapping with another light-emitting device 63 W.
  • the layer 183 R includes the layer CFR 1 , and the layer CFR 1 contains a color conversion material.
  • the layer 183 G includes the layer CFG 1 , and the layer CFG 1 contains a color conversion material.
  • the layer 183 B contains a color conversion material and functions as a color filter.
  • the layer 183 R can convert light emitted by the light-emitting device 63 W into red light and transmit the light
  • the layer 183 G can convert light emitted by the light-emitting device 63 W into green light and transmit the light
  • the layer 183 B can transmit blue light included in light emitted by the light-emitting device 63 W.
  • optical members can be provided on the outer side of the substrate 16 b .
  • a polarizing plate, a retardation plate, a light diffusion layer (e.g., a diffusion film), an anti-reflection layer, a light-condensing film, or the like can be provided.
  • the light-emitting device 63 W includes the conductive layer 171 and the EL layer 172 W.
  • the light-emitting device described in any one of Embodiments 2 to 6 can be used as the light-emitting device 63 W.
  • the light-emitting device 63 W includes the conductive layer 171 , and the conductive layer 171 functions as a pixel electrode.
  • the conductive layer 171 includes a depression portion, which overlaps with an opening provided in an insulating layer 214 , an insulating layer 215 , and an insulating layer 213 .
  • the transistor 205 includes a conductive layer 222 b , and the conductive layer 222 b is electrically connected to the conductive layer 171 .
  • the display apparatus 100 H includes an insulating layer 272 .
  • the insulating layer 272 covers an end portion of the conductive layer 171 to fill the depression portion of the conductive layer 171 (see FIG. 20 A ).
  • the display apparatus 100 H includes the protective layer 273 and a bonding layer 142 .
  • the protective layer 273 covers the plurality of light-emitting devices 63 W.
  • the protective layer 273 and the substrate 16 b are attached to each other with the bonding layer 142 .
  • the bonding layer 142 fills a space between the substrate 16 b and the protective layer 273 .
  • the bonding layer 142 may be formed in a frame shape so as not to overlap with the light-emitting devices and a region surrounded by the bonding layer 142 , the substrate 16 b , and the protective layer 273 may be filled with a resin different from the material of the bonding layer 142 .
  • a hollow sealing structure may be employed, in which the region is filled with an inert gas (e.g., nitrogen or argon).
  • an inert gas e.g., nitrogen or argon
  • the material that can be used for the bonding layer 122 can be used for the bonding layer 142 .
  • the display apparatus 100 H includes the connection portion 140 , and the connection portion 140 includes a conductive layer 168 .
  • a power supply potential is supplied to the conductive layer 168 .
  • the light-emitting device 63 W includes a conductive layer 173 .
  • the conductive layer 168 is electrically connected to the conductive layer 173 , and the conductive layer 173 is supplied with a power supply potential.
  • the conductive layer 173 functions as a common electrode.
  • the conductive layer 171 and the conductive layer 168 can be formed by processing one conductive film.
  • the display apparatus 100 H has a top-emission structure.
  • the light-emitting device 63 W emits light toward the substrate 16 b side.
  • the conductive layer 171 contains a material reflecting visible light, and the conductive layer 173 contains a material transmitting visible light.
  • Insulating Layer 211 Insulating Layer 213 , Insulating Layer 215 , and Insulating Layer 214 .
  • An insulating layer 211 , the insulating layer 213 , the insulating layer 215 , and the insulating layer 214 are provided in this order over the substrate 14 b .
  • the number of insulating layers is not limited and each insulating layer may be a single layer or a stacked layer of two or more layers.
  • an inorganic insulating film can be used as each of the insulating layers 211 , 213 , and 215 .
  • a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used, for example.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
  • a stack including two or more of the above insulating films may also be used.
  • the insulating layers 215 and 214 cover the transistors.
  • the insulating layer 214 functions as a planarization layer.
  • a material in which impurities such as water and hydrogen are less likely to be diffused is preferably used for the insulating layer 215 or the insulating layer 214 . This can effectively inhibit impurities from being diffused to the transistors from the outside. Furthermore, the reliability of the display apparatus can be improved.
  • an organic insulating layer can be favorably used as the insulating layer 214 .
  • an acrylic resin, a polyimide resin, an epoxy resin, a polyamide resin, a polyimide-amide resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, a precursor of any of these resins, or the like can be used for the organic insulating layer.
  • the insulating layer 214 can have a stacked layer structure of an organic insulating layer and an inorganic insulating layer.
  • the outermost layer of the insulating layer 214 can be used as an etching protective layer. For example, in the case where a phenomenon of forming a depression portion in the insulating layer 214 should be avoided in processing the conductive layer 171 in a predetermined shape, the phenomenon can be inhibited.
  • the transistor 201 and the transistor 205 are formed over the substrate 14 b . These transistors can be fabricated using the same materials in the same steps.
  • Each of the transistors 201 and 205 includes a conductive layer 221 , the insulating layer 211 , a conductive layer 222 a , the conductive layer 222 b , a semiconductor layer 231 , the insulating layer 213 , and a conductive layer 223 .
  • the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231 .
  • the conductive layer 221 functions as a gate and the insulating layer 211 functions as a first gate insulating layer.
  • the conductive layer 222 a and the conductive layer 222 b function as a source and a drain.
  • the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231 .
  • the conductive layer 223 functions as a gate and the insulating layer 213 functions as a second gate insulating layer.
  • a plurality of layers obtained by processing the same conductive film are shown with the same hatching pattern.
  • transistors included in the display apparatus of this embodiment There is no particular limitation on the structure of the transistors included in the display apparatus of this embodiment.
  • a planar transistor, a staggered transistor, or an inverted staggered transistor can be used.
  • a top-gate transistor or a bottom-gate transistor can be used.
  • gates may be provided above and below a semiconductor layer where a channel is formed.
  • the structure in which the semiconductor layer where a channel is formed is provided between two gates is used for the transistors 201 and 205 .
  • the two gates may be connected to each other and supplied with the same signal to operate the transistor.
  • the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other of the two gates.
  • crystallinity of a semiconductor layer of the transistors there is no particular limitation on the crystallinity of a semiconductor layer of the transistors, and an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partly including crystal regions) may be used. It is preferable to use a semiconductor having crystallinity, in which case deterioration of the transistor characteristics can be suppressed.
  • the semiconductor layer of the transistor preferably contains a metal oxide. That is, an OS transistor is preferably used as the transistor included in the display apparatus of this embodiment.
  • indium oxide, gallium oxide, and zinc oxide can be used for the semiconductor layer.
  • the metal oxide preferably contains two or three kinds selected from indium, an element M, and zinc.
  • the element M is one or more of gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium.
  • the element M is preferably one or more of aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) also referred to as IGZO
  • ITZO oxide containing indium, gallium, tin, and zinc.
  • IAZO oxide containing indium (In), aluminum (Al), and zinc (Zn)
  • IAGZO oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn)
  • the atomic ratio of In is preferably greater than or equal to the atomic ratio of M in the In-M-Zn oxide.
  • the case is included where the atomic ratio of Ga is greater than or equal to 1 and less than or equal to 3 and the atomic ratio of Zn is greater than or equal to 2 and less than or equal to 4 with the atomic ratio of In being 4.
  • the case is included where the atomic ratio of Ga is greater than 0.1 and less than or equal to 2 and the atomic ratio of Zn is greater than or equal to 5 and less than or equal to 7 with the atomic ratio of In being 5.
  • the semiconductor layer may include two or more metal oxide layers having different compositions.
  • gallium or aluminum is preferably used as the element M.
  • a stacked structure of one selected from indium oxide, indium gallium oxide, and IGZO, and one selected from IAZO, IAGZO, and ITZO (registered trademark) may be employed, for example.
  • an oxide semiconductor having crystallinity examples include a c-axis-aligned crystalline oxide semiconductor (CAAC-OS) and a nanocrystalline oxide semiconductor (nc-OS).
  • CAAC-OS c-axis-aligned crystalline oxide semiconductor
  • nc-OS nanocrystalline oxide semiconductor
  • a transistor using silicon in its channel formation region may be used.
  • silicon examples include single crystal silicon, polycrystalline silicon, and amorphous silicon.
  • a transistor containing low-temperature polysilicon (LTPS) in its semiconductor layer also referred to as an LTPS transistor
  • the LTPS transistor has high field-effect mobility and excellent frequency characteristics.
  • a circuit required to be driven at a high frequency e.g., a data driver circuit
  • a circuit required to be driven at a high frequency can be formed on the same substrate as the display portion. This allows simplification of an external circuit mounted on the display apparatus and a reduction in costs of parts and mounting costs.
  • An OS transistor has much higher field-effect mobility than a transistor containing amorphous silicon.
  • the OS transistor has an extremely low leakage current between a source and a drain in an off state (hereinafter also referred to as off-state current), and charge accumulated in a capacitor that is connected in series to the transistor can be held for a long period. Furthermore, the power consumption of the display apparatus can be reduced with the OS transistor.
  • the amount of current fed through the light-emitting device needs to be increased.
  • the source-drain voltage of a driving transistor included in the pixel circuit needs to be increased.
  • An OS transistor has a higher withstand voltage between a source and a drain than a Si transistor; hence, high voltage can be applied between the source and the drain of the OS transistor. Therefore, when an OS transistor is used as the driving transistor in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, so that the luminance of the light-emitting device can be increased.
  • a change in source-drain current relative to a change in gate-source voltage can be smaller in an OS transistor than in a Si transistor. Accordingly, when an OS transistor is used as the driving transistor included in the pixel circuit, a current flowing between the source and the drain can be minutely determined by controlling the gate-source voltage. Thus, the amount of current flowing through the light-emitting device can be controlled. Consequently, the number of gray levels expressed by the pixel circuit can be increased.
  • OS transistors as the driving transistors included in the pixel circuits, it is possible to inhibit black-level degradation, increase the luminance, increase the number of gray levels, and suppress variations in characteristics of light-emitting devices, for example.
  • the transistors included in the circuit 164 and the transistors included in the display portion 107 may have the same structure or different structures.
  • One structure or two or more kinds of structures may be employed for a plurality of transistors included in the circuit 164 .
  • one structure or two or more kinds of structures may be employed for a plurality of transistors included in the display portion 107 .
  • All transistors included in the display portion 107 may be OS transistors, or all transistors included in the display portion 107 may be Si transistors. Alternatively, some of the transistors included in the display portion 107 may be OS transistors and the others may be Si transistors.
  • the display apparatus can have low power consumption and high driving capability.
  • a structure in which an LTPS transistor and an OS transistor are used in combination is referred to as LTPO in some cases.
  • an OS transistor be used as a transistor functioning as a switch for controlling electrical continuity between wirings and an LTPS transistor be used as a transistor for controlling current.
  • one transistor included in the display portion 107 functions as a transistor for controlling a current flowing through the light-emitting device and can be referred to as a driving transistor.
  • One of a source and a drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device.
  • An LTPS transistor is preferably used as the driving transistor. In that case, the amount of current flowing through the light-emitting device can be increased.
  • Another transistor included in the display portion 107 functions as a switch for controlling selection or non-selection of a pixel and can be referred to as a selection transistor.
  • a gate of the selection transistor is electrically connected to a gate line, and one of a source and a drain thereof is electrically connected to a signal line.
  • An OS transistor is preferably used as the selection transistor. In that case, the gray level of the pixel can be maintained even with an extremely low frame frequency (e.g., 1 fps or less); thus, power consumption can be reduced by stopping the driver in displaying a still image.
  • the display apparatus of one embodiment of the present invention can have all of a high aperture ratio, high resolution, high display quality, and low power consumption.
  • the display apparatus of one embodiment of the present invention has a structure including the OS transistor and the light-emitting device having an MML structure.
  • This structure can significantly reduce a leakage current that would flow through a transistor and a leakage current that would flow between adjacent light-emitting devices. Displaying images on the display apparatus having this structure can bring one or more of image crispness, image sharpness, high color saturation, and a high contrast ratio to the viewer.
  • a leakage current that would flow through the transistor and a lateral leakage current that would flow between light-emitting devices are extremely low, display with little leakage of light at the time of black display (black-level degradation), for example, can be achieved.
  • FIGS. 20 B and 20 C are cross-sectional views each illustrating another example of a cross-sectional structure of a transistor that can be used for the display apparatus 100 H.
  • a transistor 209 and a transistor 210 each include the conductive layer 221 , the insulating layer 211 , the semiconductor layer 231 , the conductive layer 222 a , the conductive layer 222 b , an insulating layer 225 , the conductive layer 223 , and the insulating layer 215 .
  • the semiconductor layer 231 includes a channel formation region 231 i and a pair of low-resistance regions 231 n .
  • the insulating layer 211 is located between the conductive layer 221 and the channel formation region 231 i .
  • the conductive layer 221 functions as a gate and the insulating layer 211 functions as a first gate insulating layer.
  • the insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231 i .
  • the conductive layer 223 functions as a gate, and the insulating layer 225 functions as a second gate insulating layer.
  • the conductive layer 222 a is electrically connected to one of the pair of low-resistance regions 231 n and the conductive layer 222 b is electrically connected to the other of the pair of low-resistance regions 231 n .
  • the insulating layer 215 covers the conductive layer 223 .
  • An insulating layer 218 covers the transistor.
  • the insulating layer 225 covers the top and side surfaces of the semiconductor layer 231 (see FIG. 20 B ).
  • the insulating layer 225 and the insulating layer 215 have openings, through which the conductive layers 222 a and 222 b are electrically connected to the low-resistance regions 231 n .
  • One of the conductive layers 222 a and 222 b functions as a source, and the other functions as a drain.
  • the insulating layer 225 overlaps with the channel formation region 231 i of the semiconductor layer 231 and does not overlap with the low-resistance regions 231 n (see FIG. 20 C ).
  • the insulating layer 225 can be processed in a predetermined shape using the conductive layer 223 as a mask.
  • the insulating layer 215 covers the insulating layer 225 and the conductive layer 223 .
  • the insulating layer 215 has openings, through which the conductive layers 222 a and 222 b are electrically connected to the low-resistance regions 231 n.
  • connection portion 204 is provided for the substrate 14 b .
  • the connection portion 204 includes a conductive layer 166 , and the conductive layer 166 is electrically connected to the wiring 165 .
  • the connection portion 204 does not overlap with the substrate 16 b , and the conductive layer 166 is exposed.
  • the conductive layer 166 and the conductive layer 171 can be formed by processing one conductive film.
  • the conductive layer 166 is electrically connected to the FPC 177 through a connection layer 242 .
  • As the connection layer 242 for example, an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP) can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • FIG. 21 is a cross-sectional view illustrating a structure of a display apparatus 100 I.
  • the display apparatus 100 I is different from the display apparatus 100 H in having flexibility.
  • the display apparatus 100 I is a flexible display.
  • the display apparatus 100 I includes a substrate 17 and a substrate 18 instead of the substrate 14 b and the substrate 16 b , respectively.
  • the substrates 17 and 18 both have flexibility.
  • the display apparatus 100 I includes a bonding layer 156 and an insulating layer 162 .
  • the insulating layer 162 and the substrate 17 are attached to each other with the bonding layer 156 .
  • the material that can be used for the bonding layer 122 can be used for the bonding layer 156 .
  • the material that can be used for the insulating layer 211 , the insulating layer 213 , or the insulating layer 215 can be used for the insulating layer 162 .
  • the transistors 201 and 205 are provided over the insulating layer 162 .
  • the insulating layer 162 is formed over a formation substrate, and the transistors, the light-emitting devices, and the like are formed over the insulating layer 162 . Then, the bonding layer 142 is formed over the light-emitting devices 63 , and the formation substrate and the substrate 18 are attached to each other with the bonding layer 142 . After that, the formation substrate is separated from the insulating layer 162 and the surface of the insulating layer 162 is exposed. Then, the bonding layer 156 is formed on the exposed surface of the insulating layer 162 , and the insulating layer 162 and the substrate 17 are attached to each other with the bonding layer 156 . In this manner, the components formed over the formation substrate can be transferred onto the substrate 17 , whereby the display apparatus 100 I can be manufactured.
  • FIG. 22 is a cross-sectional view illustrating a structure of a display apparatus 100 J.
  • the display apparatus 100 J is different from the display apparatus 100 H in that an EL layer 172 is continuous between the adjacent light-emitting devices 63 W, instead of a structure where the EL layer 172 W is divided between the adjacent light-emitting devices 63 W.
  • the display apparatus 100 J includes the layers 183 R, 183 G, and 183 B between the substrate 16 b and the substrate 14 b .
  • the layer 183 R overlaps with one of the light-emitting devices 63 W
  • the layer 183 G overlaps with another light-emitting device 63 W
  • the layer 183 B overlaps with another light-emitting device 63 W.
  • the display apparatus 100 J includes a light-blocking layer 117 .
  • the light-blocking layer 117 is provided between the layers 183 R and 183 G, between the layers 183 G and 183 B, and between the layers 183 B and 183 R.
  • the light-blocking layer 117 includes a region overlapping with the connection portion 140 and a region overlapping with the circuit 164 .
  • the light-emitting device 63 W can emit blue light, for example.
  • the layer 183 R can convert light emitted by the light-emitting device 63 W into red light and transmit the light
  • the layer 183 G can convert light emitted by the light-emitting device 63 W into green light and transmit the light
  • the layer 183 B can transmit blue light included in light emitted by the light-emitting device 63 W.
  • the display apparatus 100 J can perform full color display, emitting red light 83 R, green light 83 G, and blue light 83 B.
  • FIG. 23 is a cross-sectional view illustrating a structure of a display apparatus 100 K.
  • the display apparatus 100 K is of a bottom-emission type, which is different from the display apparatus 100 H.
  • the light-emitting device emits light to the substrate 14 b side, and the light 83 R, the light 83 G, and the light 83 B emitted by the display apparatus 100 K are extracted from the substrate 14 b side.
  • a material transmitting visible light is used for the conductive layer 171 .
  • a material reflecting visible light is used for the conductive layer 173 .
  • FIG. 24 is a cross-sectional view illustrating a structure of a display apparatus 100 L.
  • the display apparatus 100 L is of a bottom-emission type and has flexibility, which is different from the display apparatus 100 H.
  • the display apparatus 100 L includes the substrate 17 and the substrate 18 instead of the substrate 14 b and the substrate 16 b , respectively.
  • the substrate 17 and the substrate 18 each have flexibility.
  • the light-emitting device emits light to the substrate 17 side, and the light 83 R, the light 83 G, and the light 83 B emitted by the display apparatus 100 L are extracted from the substrate 17 side.
  • the conductive layer 221 and the conductive layer 223 may have a property of transmitting visible light and a property of reflecting visible light.
  • the visible-light transmittance in the display portion 107 can be improved.
  • the conductive layers 221 and 223 has a property of reflecting visible light, the amount of visible light entering the semiconductor layer 231 can be reduced. In addition, damage to the semiconductor layer 231 can be reduced. Accordingly, the reliability of the display apparatus 100 K or the display apparatus 100 L can be increased.
  • the display portion 107 can have the visible-light transmittance improved.
  • FIG. 25 is a cross-sectional view illustrating a structure of a display apparatus 100 M.
  • the display apparatus 100 M is different from the display apparatus 100 H in that the EL layer 172 W is continuous between the adjacent light-emitting devices 63 W, instead of a structure where the EL layer 172 W is divided between the adjacent light-emitting devices 63 W and that the display apparatus 100 M is of a bottom-emission type.
  • the display apparatus 100 M includes the layer 183 R, the layer 183 G, and the layer 183 B.
  • the display apparatus 100 M also includes the light-blocking layer 117 .
  • the light-blocking layer 117 is provided over the substrate 14 b and located between the substrate 14 b and the transistor 205 .
  • the insulating layer 153 is located between the light-blocking layer 117 and the transistor 205 .
  • the light-blocking layer 117 does not overlap with the light-emitting device 63 W.
  • the light-blocking layer 117 overlaps with the connection portion 140 and the circuit 164 .
  • the light-blocking layer 117 can be provided in the display apparatus 100 K or the display apparatus 100 L. This case can inhibit light emitted by the light-emitting device 63 W from being reflected by the substrate 14 b and being diffused inside the display apparatus 100 K or the display apparatus 100 L, for example. Thus, the display apparatus 100 K and the display apparatus 100 L can provide high display quality.
  • FIG. 26 illustrates an example of cross sections of part of a region including the FPC 177 , part of the circuit 164 , part of the display portion 107 , part of the connection portion 140 , and part of a region including an end portion in a display apparatus 100 N.
  • the display apparatus 100 N illustrated in FIG. 26 includes a transistor 205 D, a transistor 205 R, a transistor 205 G, a transistor 205 B, the light-emitting device 61 W, and the like between the substrate 14 b and the substrate 16 b.
  • Each of the transistors 205 D, 205 R, 205 G, and 205 B is formed over the substrate 14 b . These transistors can be fabricated using the same material through the same process.
  • the transistors 205 D, 205 R, 205 G, and 205 B each include the conductive layer 221 functioning as a gate, the insulating layer 213 functioning as a gate insulating layer, the conductive layer 222 a and the conductive layer 222 b functioning as a source and a drain, the semiconductor layer 321 , and the insulating layer 211 (insulating layers 211 a , 211 b , and 211 c ).
  • a plurality of layers obtained by processing the same conductive film are shown with the same hatching pattern.
  • the insulating layer 211 is located between the conductive layer 222 a and the semiconductor layer 222 b .
  • the insulating layer 213 is located between the conductive layer 221 and the semiconductor layer 321 .
  • the transistors included in the circuit 164 and the transistors included in the display portion 107 may have the same structure or different structures.
  • a plurality of transistors included in the circuit 164 may have the same structure or two or more kinds of structures.
  • one structure or two or more kinds of structures may be employed for a plurality of transistors included in the display portion 107 .
  • All of the transistors included in the display portion 107 may be OS transistors or Si transistors. Alternatively, some of the transistors included in the display portion 107 may be OS transistors and the others may be Si transistors.
  • the display device can have low power consumption and high drive capability.
  • a structure in which an LTPS transistor and an OS transistor are used in combination is referred to as LTPO in some cases.
  • a structure is given in which the OS transistor is used as a transistor functioning as a switch for controlling electrical continuity and discontinuity between wirings and the LTPS transistor is used as a transistor for controlling current.
  • one transistor included in the display portion 107 may function as a transistor for controlling current flowing through the light-emitting device and be referred to as a driving transistor.
  • One of a source and a drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device.
  • An LTPS transistor is preferably used as the driving transistor. In that case, the amount of current flowing through the light-emitting device can be increased in the pixel circuit.
  • another transistor included in the display portion 107 functions as a switch for controlling selection or non-selection of a pixel and can also be referred to as a selection transistor.
  • a gate of the selection transistor is electrically connected to a gate line, and one of a source and a drain thereof is electrically connected to a source line (signal line).
  • An OS transistor is preferably used as the selection transistor. Accordingly, the gray level of the pixel can be maintained even with an extremely low frame frequency (e.g., 1 fps or less); thus, power consumption can be reduced by stopping the driver in displaying a still image.
  • the insulating layer 218 is provided to cover the transistors 205 D, 205 R, 205 G, and 205 B and an insulating layer 214 is provided over the insulating layer 218 .
  • the insulating layer 218 preferably functions as a protective layer of the transistors.
  • a material through which impurities such as water and hydrogen are less likely to be diffused is preferably used for the insulating layer 218 . This is because the insulating layer 218 can function as a barrier film. Such a structure can effectively inhibit diffusion of impurities into the transistors from the outside and increase the reliability of the display apparatus.
  • the insulating layer 218 preferably includes one or more inorganic insulating films.
  • the inorganic insulating film include an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film. Specific examples of these inorganic insulating films are as described above.
  • the insulating layer 214 preferably has a function of a planarization layer, and an organic insulating film is suitably used.
  • materials that can be used for the organic insulating film include an acrylic resin, a polyimide resin, an epoxy resin, a polyamide resin, a polyimide-amide resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, and precursors of these resins.
  • the insulating layer 214 may have a stacked-layer structure of an organic insulating film and an inorganic insulating film. The outermost layer of the insulating layer 214 preferably functions as an etching protective layer.
  • a depression in the insulating layer 214 can be inhibited in processing conductive layers 171 R, 171 G, and 171 B, for example.
  • a depression may be formed in the insulating layer 214 in processing the conductive layers 171 R, 171 G, and 171 B, for example.
  • the light-emitting device 61 W is provided over the insulating layer 214 .
  • the layers 183 R, 183 G, 183 B and the like are provided for the surface of the substrate 16 b which faces the substrate 14 b.
  • One of the light-emitting devices 61 W includes a conductive layer 171 R, the EL layer 172 over the conductive layer 171 R, and the conductive layer 173 over the EL layer 172 .
  • the layer 183 R includes the layer CFR 1 , and the layer CFR 1 contains a color conversion material. Accordingly, light emitted by the light-emitting device 61 W is extracted as red light to the outside of the display apparatus 100 N through the layer 183 R.
  • Another light-emitting device 61 W includes a conductive layer 171 G, the EL layer 172 over the conductive layer 171 G, and the conductive layer 173 over the EL layer 172 .
  • the layer 183 G includes the layer CFG 1 , and the layer CFG 1 contains a color conversion material. Accordingly, light emitted by the light-emitting device 61 W is extracted as green light to the outside of the display apparatus 100 N through the layer 183 G.
  • Another light-emitting device 61 W includes a conductive layer 171 B, the EL layer 172 over the conductive layer 171 B, and the conductive layer 173 over the EL layer 172 .
  • the layer 183 B contains a color conversion material and functions as a color filter. Accordingly, light emitted by the light-emitting device 61 W is extracted as blue light to the outside of the display apparatus 100 N through the layer 183 B.
  • the plurality of light-emitting devices 61 W includes the EL layer 172 and the conductive layer 173 .
  • the number of manufacturing steps can be smaller in the case where the EL layer 172 is shared by subpixels of different colors than in the case where EL layers are independently provided for the subpixels of different colors.
  • the conductive layer 171 R is electrically connected to the conductive layer 222 b included in the transistor 205 R through an opening provided in the insulating layers 213 , 218 , and 214 .
  • the conductive layer 171 G is electrically connected to the conductive layer 222 b included in the transistor 205 G and the conductive layer 171 B is electrically connected to the conductive layer 222 b included in the transistor 205 B.
  • the insulating layer 272 functions as a partition (also referred to as a bank or a spacer).
  • the insulating layer 272 can have a single-layer structure or a stacked-layer structure including one or both of an inorganic insulating material and an organic insulating material.
  • a material that can be used for the insulating layer 218 and a material that can be used for the insulating layer 214 can be used for the insulating layer 272 , for example.
  • the insulating layer 272 can electrically isolate the pixel electrode and the common electrode. Furthermore, the insulating layer 272 can electrically isolate light-emitting devices adjacent to each other.
  • the conductive layer 173 is a continuous film shared by the plurality of light-emitting devices 61 W.
  • the conductive layer 173 shared by the plurality of light-emitting devices 61 W is electrically connected to the conductive layer 168 provided in the connection portion 140 .
  • the conductive layer 168 is preferably formed using a conductive layer formed using the same material through the same process as the conductive layers 171 R, 171 G, and 171 B.
  • the protective layer 273 is provided over the plurality of light-emitting devices 61 W.
  • the protective layer 273 and the substrate 16 b are attached to each other with the bonding layer 142 .
  • the substrate 16 b is provided with the light-blocking layer 117 .
  • a solid sealing structure, a hollow sealing structure, or the like can be employed to seal the light-emitting devices.
  • a solid sealing structure is employed, in which a space between the substrate 16 b and the substrate 14 b is filled with the bonding layer 142 .
  • a hollow sealing structure may be employed, in which the space is filled with an inert gas (e.g., nitrogen or argon).
  • the bonding layer 142 may be provided not to overlap with the light-emitting device.
  • the space may be filled with a resin other than the frame-like bonding layer 142 .
  • the protective layer 273 is provided at least in the display portion 107 , and preferably provided to cover the entire display portion 107 .
  • the protective layer 273 is preferably provided to cover not only the display portion 107 but also the connection portion 140 and the circuit 164 . It is further preferable that the protective layer 273 be provided to extend to the end portion of the display apparatus 100 N.
  • the connection portion 204 has a portion not provided with the protective layer 273 so that the FPC 177 and the conductive layer 166 are electrically connected to each other.
  • Providing the protective layer 273 over the light-emitting devices 61 W can improve the reliability of the light-emitting devices.
  • the protective layer 273 may have a single-layer structure or a stacked-layer structure including two or more layers. There is no limitation on the conductivity of the protective layer 273 . As the protective layer 273 , at least one type of insulating films, semiconductor films, and conductive films can be used.
  • the protective layer 273 including an inorganic film can inhibit deterioration of the light-emitting devices by preventing oxidation of the conductive layer 173 and inhibiting entry of impurities (e.g., moisture and oxygen) into the light-emitting devices, for example; thus, the reliability of the display apparatus can be improved.
  • impurities e.g., moisture and oxygen
  • an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used, for example. Specific examples of these inorganic insulating films are as described above.
  • the protective layer 273 preferably includes a nitride insulating film or a nitride oxide insulating film, and further preferably includes a nitride insulating film.
  • An inorganic film containing ITO, In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, IGZO, or the like can be used for the protective layer 273 .
  • the inorganic film preferably has high resistance, specifically, higher resistance than the conductive layer 173 .
  • the inorganic film may further contain nitrogen.
  • the protective layer 273 When light emitted from the light-emitting device is extracted through the protective layer 273 , the protective layer 273 preferably has a good property of transmitting visible light.
  • ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials having a high visible-light-transmitting property.
  • the protective layer 273 can be, for example, a stack of an aluminum oxide film and a silicon nitride film over the aluminum oxide film, or a stack of an aluminum oxide film and an IGZO film over the aluminum oxide film.
  • a stacked-layer structure can inhibit entry of impurities (e.g., water and oxygen) into the EL layer.
  • the protective layer 273 may include an organic film.
  • the protective layer 273 may include both an organic film and an inorganic film.
  • Examples of an organic film that can be used for the protective layer 273 include organic insulating films that can be used for the insulating layer 214 .
  • connection portion 204 is provided in a region of the substrate 14 b not overlapping with the substrate 16 b .
  • the wiring 165 is electrically connected to the FPC 177 through the conductive layer 166 and a connection layer 242 .
  • the conductive layer 166 is a single conductive layer obtained by processing the same conductive film as the conductive layers 171 R, 171 G, and 171 B. On the top surface of the connection portion 204 , the conductive layer 166 is exposed. Thus, the connection portion 204 and the FPC 177 can be electrically connected to each other through the connection layer 242 .
  • the display apparatus 100 N has a top-emission structure. Light from the light-emitting device is emitted toward the substrate 16 b side.
  • a material having a high visible-light-transmitting property is preferably used for the substrate 16 b .
  • the conductive layers 171 R, 171 G, and 171 B each contain a material reflecting visible light, and the conductive layer 173 contains a material transmitting visible light.
  • the light-blocking layer 117 is preferably provided on the surface of the substrate 16 b on the substrate 14 b side.
  • the light-blocking layer 117 can be provided over a region between adjacent light-emitting devices, in the connection portion 140 , in the circuit 164 , and the like.
  • optical members can be provided on the outside of the substrate 16 b (the surface opposite to the substrate 14 b ).
  • the optical members include a polarizing plate, a retardation plate, a light diffusion layer (e.g., a diffusion film), an anti-reflective layer, and a light-condensing film.
  • an antistatic film inhibiting the attachment of dust, a water repellent film inhibiting the attachment of stain, a hard coat film inhibiting generation of a scratch caused by the use, an impact-absorbing layer, or the like may be provided as a surface protective layer on the outer surface of the substrate 16 b .
  • the surface protective layer a glass layer or a silica layer (SiO x layer) because the surface contamination or damage can be prevented.
  • the surface protective layer may be formed using diamond like carbon (DLC), aluminum oxide (AlO x ), a polyester-based material, a polycarbonate-based material, or the like.
  • DLC diamond like carbon
  • AlO x aluminum oxide
  • polyester-based material a polyester-based material
  • polycarbonate-based material or the like.
  • a material having high transmittance with respect to visible light is preferably used.
  • the surface protective layer is preferably formed using a material with high hardness.
  • connection layer 242 an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • Electronic devices of this embodiment each include the display apparatus of one embodiment of the present invention in a display portion.
  • the display apparatus of one embodiment of the present invention is highly reliable and can be easily increased in resolution and definition.
  • the light-emitting apparatus of one embodiment of the present invention can be used for display portions of a variety of electronic apparatuses.
  • Examples of the electronic devices include a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game console, a portable information terminal, and an audio reproducing device, in addition to electronic devices with a relatively large screen, such as a television device, desktop and notebook personal computers, a monitor of a computer and the like, digital signage, and a large game machine such as a pachinko machine.
  • the display apparatus of one embodiment of the present invention can have a high definition, and thus can be favorably used for an electronic device having a relatively small display portion.
  • an electronic device include watch-type and bracelet-type information terminal devices (wearable devices) and wearable devices worn on the head, such as a VR device like a head-mounted display, a glasses-type AR device, and an MR device.
  • the definition of the display apparatus of one embodiment of the present invention is preferably as high as HD (number of pixels: 1280 ⁇ 720), FHD (number of pixels: 1920 ⁇ 1080), WQHD (number of pixels: 2560 ⁇ 1440), WQXGA (number of pixels: 2560 ⁇ 1600), 4K (number of pixels: 3840 ⁇ 2160), or 8K (number of pixels: 7680 ⁇ 4320).
  • HD number of pixels: 1280 ⁇ 720
  • FHD number of pixels: 1920 ⁇ 1080
  • WQHD number of pixels: 2560 ⁇ 1440
  • WQXGA number of pixels: 2560 ⁇ 1600
  • 4K number of pixels: 3840 ⁇ 2160
  • 8K number of pixels: 7680 ⁇ 4320.
  • definition of 4K, 8K, or higher is preferable.
  • the pixel density (resolution) of the display apparatus of one embodiment of the present invention is preferably 100 ppi or higher, further preferably 300 ppi or higher, further preferably 500 ppi or higher, further preferably 1000 ppi or higher, still further preferably 2000 ppi or higher, still further preferably 3000 ppi or higher, still further preferably 5000 ppi or higher, yet further preferably 7000 ppi or higher.
  • the electronic device can provide higher realistic sensation, sense of depth, and the like in personal use such as portable use or home use.
  • the screen ratio (aspect ratio) of the display apparatus of one embodiment of the present invention is compatible with a variety of screen ratios such as 1:1 (a square), 4:3, 16:9, and 16:10.
  • the electronic device in this embodiment may include a sensor (a sensor having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational frequency, distance, light, liquid, magnetism, temperature, a chemical substance, sound, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity, gradient, oscillation, odor, or infrared rays).
  • a sensor a sensor having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational frequency, distance, light, liquid, magnetism, temperature, a chemical substance, sound, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity, gradient, oscillation, odor, or infrared rays.
  • the electronic device in this embodiment can have a variety of functions.
  • the electronic device in this embodiment can have a function of displaying a variety of data (e.g., a still image, a moving image, and a text image) on the display portion, a touch panel function, a function of displaying a calendar, date, time, and the like, a function of executing a variety of software (programs), a wireless communication function, and a function of reading out a program or data stored in a recording medium.
  • a variety of data e.g., a still image, a moving image, and a text image
  • Examples of head-mounted wearable devices will be described with reference to FIGS. 27 A to 27 D .
  • These wearable devices have at least one of a function of displaying AR contents, a function of displaying VR contents, a function of displaying SR contents, and a function of displaying MR contents.
  • the electronic device having a function of displaying contents of at least one of AR, VR, SR, MR, and the like enables the user to feel a higher level of immersion.
  • An electronic device 6700 A illustrated in FIG. 27 A and an electronic device 6700 B illustrated in FIG. 27 B each include a pair of display panels 6751 , a pair of housings 6721 , a communication portion (not illustrated), a pair of mounting portions 6723 , a control portion (not illustrated), an imaging portion (not illustrated), a pair of optical members 6753 , a frame 6757 , and a pair of nose pads 6758 .
  • the display apparatus of one embodiment of the present invention can be used for the display panels 6751 .
  • a highly reliable electronic device can be obtained.
  • the electronic devices 6700 A and 6700 B can each project images displayed on the display panels 6751 onto display regions 6756 of the optical members 6753 . Since the optical members 6753 have a light-transmitting property, the user can see images displayed on the display regions, which are superimposed on transmission images seen through the optical members 6753 . Accordingly, the electronic devices 6700 A and 6700 B are electronic devices capable of AR display.
  • a camera capable of capturing images of the front side may be provided as the image capturing portion. Furthermore, when the electronic devices 6700 A and 6700 B are provided with an acceleration sensor such as a gyroscope sensor, the orientation of the user's head can be sensed and an image corresponding to the orientation can be displayed on the display regions 6756 .
  • an acceleration sensor such as a gyroscope sensor
  • the communication portion includes a wireless communication device, and a video signal, for example, can be supplied by the wireless communication device.
  • a connector that can be connected to a cable for supplying a video signal and a power supply potential may be provided.
  • the electronic devices 6700 A and 6700 B are provided with a battery so that they can be charged wirelessly and/or by wire.
  • a touch sensor module may be provided in the housing 6721 .
  • the touch sensor module has a function of detecting a touch on the outer surface of the housing 6721 . Detecting a tap operation, a slide operation, or the like by the user with the touch sensor module enables various types of processing. For example, a video can be paused or restarted by a tap operation, and can be fast-forwarded or fast-reversed by a slide operation.
  • the touch sensor module is provided in each of the two housings 6721 , the range of the operation can be increased.
  • touch sensors can be applied to the touch sensor module.
  • any of touch sensors of the following types can be used: a capacitive type, a resistive type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type.
  • a capacitive sensor or an optical sensor is preferably used for the touch sensor module.
  • a photoelectric conversion element (also referred to as a photoelectric conversion device) can be used as a light-receiving element.
  • a photoelectric conversion element also referred to as a photoelectric conversion device
  • One or both of an inorganic semiconductor and an organic semiconductor can be used for an active layer of the photoelectric conversion element.
  • An electronic device 6800 A illustrated in FIG. 27 C and an electronic device 6800 B illustrated in FIG. 27 D each include a pair of display portions 6820 , a housing 6821 , a communication portion 6822 , a pair of wearing portions 6823 , a control portion 6824 , a pair of image capturing portions 6825 , and a pair of lenses 6832 .
  • the display apparatus of one embodiment of the present invention can be used in the display portions 6820 .
  • a highly reliable electronic device can be obtained.
  • the display portions 6820 are positioned inside the housing 6821 so as to be seen through the lenses 6832 .
  • the pair of display portions 6820 display different images, three-dimensional display using parallax can be performed.
  • the electronic devices 6800 A and 6800 B can be regarded as electronic devices for VR.
  • the user who wears the electronic device 6800 A or the electronic device 6800 B can see images displayed on the display portions 6820 through the lenses 6832 .
  • the electronic devices 6800 A and 6800 B preferably include a mechanism for adjusting the lateral positions of the lenses 6832 and the display portions 6820 so that the lenses 6832 and the display portions 6820 are positioned optimally in accordance with the positions of the user's eyes. Moreover, the electronic devices 6800 A and 6800 B preferably include a mechanism for adjusting focus by changing the distance between the lenses 6832 and the display portions 6820 .
  • the electronic device 6800 A or the electronic device 6800 B can be mounted on the user's head with the wearing portions 6823 .
  • FIG. 27 C shows an example where the wearing portion 6823 has a shape like a temple (also referred to as a joint or the like) of glasses; however, one embodiment of the present invention is not limited thereto.
  • the wearing portion 6823 can have any shape with which the user can wear the electronic device, for example, a shape of a helmet or a band.
  • the image capturing portion 6825 has a function of obtaining information on the external environment. Data obtained by the image capturing portion 6825 can be output to the display portion 6820 .
  • An image sensor can be used for the image capturing portion 6825 .
  • a plurality of cameras may be provided so as to cover a plurality of fields of view, such as a telescope field of view and a wide field of view.
  • a range sensor (also referred to as a sensing portion) capable of measuring a distance between the user and an object just needs to be provided.
  • the image capturing portion 6825 is one embodiment of the sensing portion.
  • an image sensor or a range image sensor such as a light detection and ranging (LiDAR) sensor can be used, for example.
  • LiDAR light detection and ranging
  • the electronic device 6800 A may include a vibration mechanism that functions as bone-conduction earphones.
  • a vibration mechanism that functions as bone-conduction earphones.
  • the display portion 6820 , the housing 6821 , and the wearing portion 6823 can include the vibration mechanism.
  • the user can enjoy video and sound only by wearing the electronic device 6800 A.
  • the electronic devices 6800 A and 6800 B may each include an input terminal. To the input terminal, a cable for supplying a video signal from a video output device or the like, power for charging a battery provided in the electronic device, and the like can be connected.
  • the electronic device of one embodiment of the present invention may have a function of performing wireless communication with earphones 6750 .
  • the earphones 6750 include a communication portion (not illustrated) and has a wireless communication function.
  • the earphones 6750 can receive information (e.g., audio data) from the electronic device with the wireless communication function.
  • the electronic device 6700 A in FIG. 27 A has a function of transmitting information to the earphones 6750 with the wireless communication function.
  • the electronic device 6800 A in FIG. 27 C has a function of transmitting information to the earphones 6750 with the wireless communication function.
  • the electronic device may include an earphone portion.
  • the electronic device 6700 B in FIG. 27 B includes earphone portions 6727 .
  • the earphone portion 6727 can be connected to the control portion by wire.
  • Part of a wiring that connects the earphone portion 6727 and the control portion may be positioned inside the housing 6721 or the mounting portion 6723 .
  • the electronic device 6800 B in FIG. 27 D includes earphone portions 6827 .
  • the earphone portion 6827 can be connected to the control portion 6824 by wire.
  • Part of a wiring that connects the earphone portion 6827 and the control portion 6824 may be positioned inside the housing 6821 or the mounting portion 6823 .
  • the earphone portions 6827 and the mounting portions 6823 may include magnets. This is preferred because the earphone portions 6827 can be fixed to the mounting portions 6823 with magnetic force and thus can be easily housed.
  • the electronic device may include an audio output terminal to which earphones, headphones, or the like can be connected.
  • the electronic device may include one or both of an audio input terminal and an audio input mechanism.
  • a sound collecting device such as a microphone can be used, for example.
  • the electronic device may have a function of a headset by including the audio input mechanism.
  • both the glasses-type device e.g., the electronic devices 6700 A and 6700 B
  • the goggles-type device e.g., the electronic devices 6800 A and 6800 B
  • the electronic device of one embodiment of the present invention can transmit information to earphones by wire or wirelessly.
  • An electronic device 6500 in FIG. 28 A is a portable information terminal that can be used as a smartphone.
  • the electronic device 6500 includes a housing 6501 , a display portion 6502 , a power button 6503 , buttons 6504 , a speaker 6505 , a microphone 6506 , a camera 6507 , a light source 6508 , and the like.
  • the display portion 6502 has a touch panel function.
  • the display apparatus of one embodiment of the present invention can be used in the display portion 6502 .
  • a highly reliable electronic device can be obtained.
  • FIG. 28 B is a schematic cross-sectional view including an end portion of the housing 6501 on the microphone 6506 side.
  • a protection member 6510 having a light-transmitting property is provided on the display surface side of the housing 6501 .
  • a display panel 6511 , an optical member 6512 , a touch sensor panel 6513 , a printed circuit board 6517 , a battery 6518 , and the like are provided in a space surrounded by the housing 6501 and the protection member 6510 .
  • the display panel 6511 , the optical member 6512 , and the touch sensor panel 6513 are fixed to the protection member 6510 with an adhesive layer (not illustrated).
  • Part of the display panel 6511 is folded back in a region outside the display portion 6502 , and an FPC 6515 is connected to the region that is folded back.
  • An IC 6516 is mounted on the FPC 6515 .
  • the FPC 6515 is connected to a terminal provided on the printed circuit board 6517 .
  • a flexible display of one embodiment of the present invention can be used in the display panel 6511 .
  • an extremely lightweight electronic device can be achieved.
  • the display panel 6511 is extremely thin, the battery 6518 with high capacity can be mounted without an increase in the thickness of the electronic device.
  • part of the display panel 6511 is folded back so that a connection portion with the FPC 6515 is provided on the back side of the pixel portion, whereby an electronic device with a narrow bezel can be achieved.
  • FIG. 28 C illustrates an example of a television device.
  • a display portion 7000 is incorporated in a housing 7101 .
  • the housing 7101 is supported by a stand 7103 .
  • the display apparatus of one embodiment of the present invention can be used in the display portion 7000 .
  • a highly reliable electronic device can be obtained.
  • Operation of the television device 7100 illustrated in FIG. 28 C can be performed with an operation switch provided in the housing 7101 and a separate remote controller 7111 .
  • the display portion 7000 may include a touch sensor, and the television device 7100 may be operated by touch on the display portion 7000 with a finger or the like.
  • the remote controller 7111 may be provided with a display portion for displaying information output from the remote controller 7111 . With operation keys or a touch panel of the remote controller 7111 , channels and volume can be controlled and images displayed on the display portion 7000 can be controlled.
  • the television device 7100 includes a receiver, a modem, and the like.
  • a general television broadcast can be received with the receiver.
  • the television device is connected to a communication network with or without wires via the modem, one-way (from a transmitter to a receiver) or two-way (e.g., between a transmitter and a receiver or between receivers) information communication can be performed.
  • FIG. 28 D illustrates an example of a notebook personal computer.
  • a notebook personal computer 7200 includes a housing 7211 , a keyboard 7212 , a pointing device 7213 , an external connection port 7214 , and the like.
  • the display portion 7000 is incorporated in the housing 7211 .
  • the display apparatus of one embodiment of the present invention can be used in the display portion 7000 .
  • a highly reliable electronic device can be obtained.
  • FIGS. 28 E and 28 F illustrate examples of digital signage.
  • Digital signage 7300 illustrated in FIG. 28 E includes a housing 7301 , the display portion 7000 , a speaker 7303 , and the like.
  • the digital signage 7300 can also include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, a variety of sensors, a microphone, and the like.
  • FIG. 28 F shows digital signage 7400 attached to a cylindrical pillar 7401 .
  • the digital signage 7400 includes the display portion 7000 provided along a curved surface of the pillar 7401 .
  • the display apparatus of one embodiment of the present invention can be used in the display portion 7000 .
  • a highly reliable electronic device can be obtained.
  • a larger area of the display portion 7000 can increase the amount of information that can be provided at a time.
  • the display portion 7000 having a larger area attracts more attention, so that the effectiveness of the advertisement can be increased, for example.
  • the touch panel is preferably used in the display portion 7000 , in which case in addition to display of still or moving images on the display portion 7000 , intuitive operation by a user is possible. Moreover, for an application for providing information such as route information or traffic information, usability can be enhanced by intuitive operation.
  • the digital signage 7300 or the digital signage 7400 can work with an information terminal 7311 or an information terminal 7411 , such as a smartphone that a user has, through wireless communication.
  • an information terminal 7311 or an information terminal 7411 such as a smartphone that a user has, through wireless communication.
  • information of an advertisement displayed on the display portion 7000 can be displayed on a screen of the information terminal 7311 or the information terminal 7411 .
  • a displayed image on the display portion 7000 can be switched.
  • the digital signage 7300 or the digital signage 7400 execute a game with use of the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller).
  • an unspecified number of users can join in and enjoy the game concurrently.
  • Electronic devices illustrated in FIGS. 29 A to 29 G include a housing 9000 , a display portion 9001 , a speaker 9003 , an operation key 9005 (including a power switch or an operation switch), a connection terminal 9006 , a sensor 9007 (a sensor having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational frequency, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity, gradient, oscillation, odor, or infrared rays), a microphone 9008 , and the like.
  • a sensor 9007 a sensor having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational frequency, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity, gradient, oscillation, odor, or infrared rays
  • the electronic devices illustrated in FIGS. 29 A to 29 G have a variety of functions.
  • the electronic devices can have a function of displaying a variety of information (e.g., a still image, a moving image, and a text image) on the display portion, a touch panel function, a function of displaying a calendar, date, time, and the like, a function of controlling processing with use of a variety of software (programs), a wireless communication function, and a function of reading out and processing a program or data stored in a recording medium.
  • the functions of the electronic devices are not limited thereto, and the electronic devices can have a variety of functions.
  • the electronic devices may include a plurality of display portions.
  • the electronic devices may be provided with a camera or the like and have a function of taking a still image or a moving image, a function of storing the taken image in a storage medium (an external storage medium or a storage medium incorporated in the camera), a function of displaying the taken image on the display portion, and the like.
  • FIGS. 29 A to 29 G The electronic devices illustrated in FIGS. 29 A to 29 G will be described in detail below.
  • FIG. 29 A is a perspective view showing a portable information terminal 9101 .
  • the portable information terminal 9101 can be used as a smartphone, for example.
  • the portable information terminal 9101 may include the speaker 9003 , the connection terminal 9006 , the sensor 9007 , or the like.
  • the portable information terminal 9101 can display text and image information on its plurality of surfaces.
  • FIG. 29 A illustrates an example in which three icons 9050 are displayed. Furthermore, information 9051 indicated by dashed rectangles can be displayed on another surface of the display portion 9001 .
  • Examples of the information 9051 include notification of reception of an e-mail, an SNS message, an incoming call, or the like, the title and sender of an e-mail, an SNS message, or the like, the date, the time, remaining battery, and the radio field intensity.
  • the icon 9050 may be displayed at the position where the information 9051 is displayed.
  • FIG. 29 B is a perspective view showing a portable information terminal 9102 .
  • the portable information terminal 9102 has a function of displaying information on three or more surfaces of the display portion 9001 .
  • information 9052 , information 9053 , and information 9054 are displayed on different surfaces.
  • the user can check the information 9053 displayed on the portable information terminal 9102 put in a breast pocket of the user's clothes, seeing the portable information terminal 9102 from above. The user can see the display without taking out the portable information terminal 9102 from the pocket and decide whether to answer the call, for example.
  • FIG. 29 C is a perspective view of a tablet terminal 9103 .
  • the tablet terminal 9103 is capable of executing a variety of applications such as mobile phone calls, e-mailing, viewing and editing texts, music reproduction, Internet communication, and a computer game, for example.
  • the tablet terminal 9103 includes the display portion 9001 , the camera 9002 , the microphone 9008 , and the speaker 9003 on the front surface of the housing 9000 ; the operation keys 9005 as buttons for operation on the left side surface of the housing 9000 ; and the connection terminal 9006 on the bottom surface of the housing 9000 .
  • FIG. 29 D is a perspective view of a watch-type portable information terminal 9200 .
  • the portable information terminal 9200 can be used as a Smartwatch (registered trademark), for example.
  • the display surface of the display portion 9001 is curved, and an image can be displayed on the curved display surface. Furthermore, for example, mutual communication between the portable information terminal 9200 and a headset capable of wireless communication can be performed, and thus hands-free calling is possible.
  • the connection terminal 9006 the portable information terminal 9200 can perform mutual data transmission with another information terminal and charging. Note that the charging operation may be performed by wireless power feeding.
  • FIGS. 29 E to 29 G are perspective views of a foldable portable information terminal 9201 .
  • FIG. 29 E is a perspective view showing the portable information terminal 9201 that is opened.
  • FIG. 29 G is a perspective view showing the portable information terminal 9201 that is folded.
  • FIG. 29 F is a perspective view showing the portable information terminal 9201 that is shifted from one of the states in FIGS. 29 E and 29 G to the other.
  • the portable information terminal 9201 is highly portable when folded. When the portable information terminal 9201 is opened, a seamless large display region is highly browsable.
  • the display portion 9001 of the portable information terminal 9201 is supported by three housings 9000 joined together by hinges 9055 .
  • the display portion 9001 can be folded with a radius of curvature of greater than or equal to 0.1 mm and less than or equal to 150 mm, for example.

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