US20230327159A1 - System and Method for Converting Chemical Energy Into Electrical Energy Using Nano-Engineered Porous Network Materials - Google Patents
System and Method for Converting Chemical Energy Into Electrical Energy Using Nano-Engineered Porous Network Materials Download PDFInfo
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- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/10—Fuel cells with solid electrolytes
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- H01M4/8605—Porous electrodes
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- H01M4/8605—Porous electrodes
- H01M4/8626—Porous electrodes characterised by the form
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- H01M4/8647—Inert electrodes with catalytic activity, e.g. for fuel cells consisting of more than one material, e.g. consisting of composites
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- H01M4/8647—Inert electrodes with catalytic activity, e.g. for fuel cells consisting of more than one material, e.g. consisting of composites
- H01M4/8652—Inert electrodes with catalytic activity, e.g. for fuel cells consisting of more than one material, e.g. consisting of composites as mixture
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- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/8647—Inert electrodes with catalytic activity, e.g. for fuel cells consisting of more than one material, e.g. consisting of composites
- H01M4/8657—Inert electrodes with catalytic activity, e.g. for fuel cells consisting of more than one material, e.g. consisting of composites layered
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- H—ELECTRICITY
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- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/90—Selection of catalytic material
- H01M4/9016—Oxides, hydroxides or oxygenated metallic salts
- H01M4/9025—Oxides specially used in fuel cell operating at high temperature, e.g. SOFC
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- H—ELECTRICITY
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- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/90—Selection of catalytic material
- H01M4/92—Metals of platinum group
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- H—ELECTRICITY
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- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/90—Selection of catalytic material
- H01M4/92—Metals of platinum group
- H01M4/925—Metals of platinum group supported on carriers, e.g. powder carriers
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- H—ELECTRICITY
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- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/22—Fuel cells in which the fuel is based on materials comprising carbon or oxygen or hydrogen and other elements; Fuel cells in which the fuel is based on materials comprising only elements other than carbon, oxygen or hydrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/22—Fuel cells in which the fuel is based on materials comprising carbon or oxygen or hydrogen and other elements; Fuel cells in which the fuel is based on materials comprising only elements other than carbon, oxygen or hydrogen
- H01M8/225—Fuel cells in which the fuel is based on materials comprising particulate active material in the form of a suspension, a dispersion, a fluidised bed or a paste
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
Abstract
An energy conversion device for conversion of chemical energy into electricity. The energy conversion device has a first and second electrode. A substrate is present that has a porous semiconductor or dielectric layer placed thereover. The porous semiconductor or dielectric layer can be a nano-engineered structure. A porous catalyst material is placed on at least a portion of the porous semiconductor or dielectric layer such that at least some of the porous catalyst material enters the nano-engineered structure of the porous semiconductor or dielectric layer, thereby forming an intertwining region.
Description
- This application is a divisional application of U.S. patent application Ser. No. 16/782,199, filed Feb. 5, 2020, now allowed, which application is a continuation of U.S. patent application Ser. No. 15/130,386, filed Apr. 15, 2016, now U.S. Pat. No. 10,573,913, which is a continuation of U.S. patent application Ser. No. 13/945,864 filed Jul. 18, 2013, now U.S. Pat. No. 9,437,892. Priority to these patent applications is expressly claimed, and the disclosure thereof is hereby incorporated herein by reference in its entirety. This application claims the benefit of Provisional Application Nos. 61/676,285 filed Jul. 26, 2012, 61/712,712 filed Oct. 11, 2012, 61/716,889 filed Oct. 22, 2012, and 61/724,764 filed Nov. 9, 2012. Priority to these provisional applications is expressly claimed, and the disclosures of the provisional applications are hereby incorporated herein by reference in their entirety.
- This patent document relates generally to energy conversion systems and more particularly relates to a method and system for converting chemical energy into electrical power using solid-state electric generators using planar or three dimensional surfaces that comprise porous material networks such as a nano-wire arrays or nano-engineered structures, or nano-particles, or colloidal paste.
- The use of solid state electric generators to convert chemical energy into electricity has recently been demonstrated, as explained, for example, in U.S. Pat. Nos. 6,268,560, 6,649,823, 7,371,962, and 7,663,053. U.S. Pat. Nos. 6,268,560, 6,649,823, 7,371,962, and 7,663,053 are hereby incorporated herein by reference in their entirety. Such energy conversion devices efficiently convert chemical energy to electricity. For example,
FIG. 1 herein illustrates a solid state electric generator along with graphs showing characteristics of such a device. As shown in cross section inFIG. 1 -A herein, a charge carrier, usually an electron e−, is energized on or near a conductingsurface 10A by anenergizer 12A. The charge carrier is energized, for example, by chemical reactions. In each case the charge carrier is injected into a semiconductor conduction band. For example, the charge carrier ballistically moves from aconductor 10A into a semiconductor or dielectric 11A. Theconductor 10A is so thin that the electron effectively travels through it ballistically, without losing energy or colliding with another electron or atom. Since an energy offset exists between the semiconductor conduction band and the Fermi level of the catalyst, the result is avoltage 14A acrosspositive terminal 17A andnegative terminal 16A. InFIG. 1 -A, thedielectric junction 15A is a semiconductor junction specifically chosen to create an electrical potential voltage barrier which tends to impede the electron ballistic motion, shown as 11B inFIG. 1 -B.FIG. 1 -B shows the electrical potential in the device as a function of distance along the device at zero bias. - The potential voltage barrier can be formed in any one of many ways, for example, a Schottky barrier as shown in
FIG. 1 -C, a p-n junction inFIG. 1 -D, or a conductor-dielectric-conductor junction,FIG. 1 -E. The dielectric is electrically conductive. A forward biased diode provides one of the simplest methods to implement this energy converting device.FIG. 1 -C depicts a forward biased Schottky diode whose positive terminal is a conductor/metal. - The present patent document describes various embodiments having novel three dimensional device structures that can be on a planar two-dimensional substrate or on a three-dimensional substrate. The various embodiments improve on earlier solid state electric generators by increasing amount of power (i.e., electricity) that can be produced per unit of two-dimensional area of a device. The novel device structures described herein have solid-state junctions. These device structures comprise porous semiconductor or dielectrics and nano-clusters of conductor and/or catalyst to form the solid-state junctions. Even though there are voids in the composite system, different porous semiconductor/catalyst materials, as an example, can be an integrated system or the materials may be physically connected as a network. Nano-clusters are when materials form nano-sized clusters. The solid-state junctions can be, but are not limited to, Schottky diodes or p-n junctions. Also disclosed are methods/processes to fabricate the disclosed device structures, specifically for converting chemical energy directly into electrical potential to produce power.
- An energy conversion device for conversion of chemical energy into electricity is disclosed. A first aspect of the energy conversion device comprises a first electrode connected to a substrate. A porous semiconductor (or dielectric) layer is disposed over the substrate (with an optional non-porous semiconductor (or dielectric) layer being in-between the substrate on the porous semiconductor (or dielectric) layer. A porous catalyst material is located on at least a portion of the porous semiconductor (or dielectric) layer. At least some of the porous catalyst material enters the nano-engineered structure of the porous semiconductor layer, which forms an intertwining region. A second electrode is present, and an electrical potential is formed between the first electrode and a second electrode during chemical reactions between a fuel, the porous catalyst material, and the porous semiconductor network.
- In another aspect disclosed herein, the substrate of the energy conversion device is patterned to create a three-dimensional surface, thereby providing increased surface area for chemical reactions.
- In another aspect disclosed herein, the substrate of the energy conversion device is patterned such that nano-wires are formed.
- In another aspect disclosed herein, the substrate of the energy conversion device is textured such that peaks and valleys are formed.
- In another aspect disclosed herein, the energy conversion device has a non-porous semiconductor layer in between the substrate and the porous semiconductor layer.
- The accompanying drawings, which are included as part of the present specification, illustrate various embodiments and together with the general description given above and the detailed description of the embodiments given below serve to explain and teach the principles described herein.
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FIG. 1 -A illustrates a solid-state electric generator. -
FIG. 1 -B illustrates a graph of potential energy versus distance from the device's topmost surface and indicating the effect of a potential barrier in a solid-state junction. -
FIG. 1 -C illustrates a graph of potential versus distance from the device's topmost surface in an exemplary solid-state electric generator having a Schottky barrier. -
FIG. 1 -D illustrates a graph of potential versus distance from the device's topmost surface in an exemplary solid-state electric generator having a p-n junction potential barrier. -
FIG. 1 -E illustrates a graph of potential versus distance from the device's topmost surface in an exemplary solid-state electric generator having a conductor-dielectric-conductor potential barrier. -
FIG. 2 illustrates the energy band diagram for a catalyst-semiconductor interface -
FIG. 3 illustrates the schematics of EMF generation mechanism -
FIG. 4 illustrates a schematic cross-section of a portion of a nanowire material array with a catalyst network. -
FIG. 5 a depicts a cross-sectional view of a three-dimensional porous network which consists of a porous catalyst three-dimensional layer that intertwines three-dimensionally with another porous semiconductor or dielectric three-dimensional layer on a planar two-dimensional substrate. A non-porous interlayer can optionally be inserted between the planar substrate and the porous three-dimensional layers/networks above. -
FIG. 5 b is a cross-sectional microscopic view of a three-dimensional porous network which consists of a porous catalyst three-dimensional layer that intertwines three-dimensionally with another porous semiconductor or dielectric three-dimensional layer. -
FIG. 5 c is a top microscopic image of an energy converter having a three-dimensional porous network which consists of a porous catalyst three-dimensional layer that intertwines three-dimensionally with another porous semiconductor or dielectric three-dimensional layer. -
FIG. 6 shows an energy converter having a multi-cell device structure with multiple layers of three-dimensional porous catalyst and three-dimensional porous semiconductor or dielectric networks on a planar substrate. A non-porous interlayer can be inserted or not between the planar two-dimensional substrate and the porous three-dimensional layers/networks above. -
FIG. 7 shows an exemplary energy converter having a patterned three-dimensional network of porous catalyst and porous semiconductor or dielectric on a three-dimensional substrates, in which the internal and external surfaces are covered with a porous semiconductor or dielectric layer/network that intertwines with a porous catalyst layer/network three-dimensionally. An optional non-porous layer can also be inserted between the three-dimensional substrates and the three-dimensional catalyzed porous semiconductor or dielectric layer/network. -
FIG. 8 shows an exemplary energy converter having three-dimensional porous substrate/supporting layer (partially or fully) network of porous catalyst and porous semiconductor or dielectric on a three-dimensional substrates, in which the internal and external surfaces are covered with a porous semiconductor or dielectric layer/network that intertwines with a porous catalyst layer/network three-dimensionally. An optional non-porous layer can also be inserted between the three-dimensional substrates and the three-dimensional catalyzed porous semiconductor or dielectric layer/network. -
FIG. 9 a shows an exemplary energy converter having a textured three-dimensional network of porous catalyst and porous semiconductor or dielectric on a three-dimensional substrates, in which the internal and external surfaces are covered with a porous semiconductor or dielectric layer/network that intertwines with a porous catalyst layer/network three-dimensionally. An optional non-porous layer can also be inserted between the three-dimensional substrates and the three-dimensional catalyzed porous semiconductor or dielectric layer/network. -
FIG. 9 b is a microscopic image of a cross section of an exemplary three-dimensional energy converter on a three-dimensional textured substrate as inFIG. 9 a. -
FIG. 9 c is a microscopic image of a top view of an exemplary three-dimensional energy converter on a three-dimensional textured substrate as inFIG. 9 a. - The above and other preferred features described herein, including various novel details of implementation and combination of elements, will now be more particularly described with reference to the accompanying drawings and pointed out in the claims. It will be understood that the particular methods and apparatuses are shown by way of illustration only and not as limitations of the claims. As will be understood by those skilled in the art, the principles and features of the teachings herein may be employed in various and numerous embodiments without departing from the scope of the claims.
- A method and apparatus for converting chemical energy into electricity is described. Each of the features and teachings disclosed herein can be utilized separately or in conjunction with other features and teachings. Representative examples utilizing many of these additional features and teachings, both separately and in combination, are described in further detail with reference to the attached drawings. This detailed description is merely intended to teach a person of skill in the art further details for practicing preferred aspects of the present teachings and is not intended to limit the scope of the claims. Therefore, combinations of features disclosed in the following detailed description may not be necessary to practice the teachings in the broadest sense, and are instead taught merely to describe particularly representative examples of the present teachings.
- In the following description, for purposes of explanation only, specific nomenclature is set forth to provide a thorough understanding of the various embodiments described herein. However, it will be apparent to one skilled in the art that these specific details are not required to practice the concepts described herein.
- Moreover, the various features of the representative examples and the dependent claims may be combined in ways that are not specifically and explicitly enumerated in order to provide additional useful embodiments of the present teachings. It is also expressly noted that all value ranges or indications of groups of entities disclose every possible intermediate value or intermediate entity for the purpose of original disclosure, as well as for the purpose of restricting the claimed subject matter. It is also expressly noted that the dimensions and the shapes of the components shown in the figures are designed to help to understand how the present teachings are practiced, but not intended to limit the dimensions and the shapes shown in the examples.
- Device structures and methods/processes described herein, for example, in
FIGS. 4-9 , include but are not limited to: (a) nanowires, nanofibers, or nanotubes; (b) porous nano-engineered structures with interconnecting walls and pores; and (c) porous nano-engineered structures with percolating networks. Fabrication methods/processes include but are not limited to direct film growth resulting in porous structures or/and nano-engineered structures. Methods of fabricating such devices include but are not limited to (i) stain oxidation and etching; (ii) dry and/or wet oxidation and etching; (iii) electrochemical oxidation and etching; (iv) anodization oxidation and etching; (v) micro-arc oxidation and etching; nano-particles of semiconductor(s), dielectric(s), metal(s), catalyst(s), metal salts in solvents, pastes, or colloids; and (vi) solgel processes. For certain semiconductors and dielectrics, e.g., silicon, only etching is required for all these fabrication methods/processes to introduce porosity and nano-engineered structures in the materials. - In certain embodiments, a chemical energy conversion device is described that utilizes porous semiconductor or dielectric and porous catalyst integrated one unit/network on a planar two-dimensional substrate or a three-dimensional substrate. A porous thin film of dielectric or semiconductor, such as a titanium dioxide (TiO2), which is sometimes referred to as titanium oxide, semiconducting network, can be fabricated by depositing a thin film of metallic titanium (Ti) on a non-porous planar substrate such as silicon, or on a non-porous supporting layer deposited on a planar substrate, such as a non-porous TiO2 layer on silicon. This deposited thin metallic Ti film can subsequently be oxidized to create TiO2 and further modified to form nano-porous holes in its microstructure through (i) stain oxidation and etching, (ii) dry or wet oxidation and etching, (iii) electrochemical oxidation and etching, (iv) anodization oxidation and etching, or (v) microarc oxidation and etching. Chemical reagents involved in all these processes include but are not limited to hydrofluoric acid (HF), nitric acid (HNO3), sulfuric acid (H2SO4), hydrogen peroxide (H2O2), or/and sodium hydroxide (NaOH). An additional non-porous layer of material functioning as a barrier layer can also be inserted between the deposited metallic Ti thin film and the planar substrate in order to further enhance device electrical performance. In another example the substrate itself can be a three-dimensional structure such as but not limited to porous silicon, textured silicon surfaces, and patterned silicon wafers. Likewise an additional non-porous thin layer of semiconductor or dielectric such as TiO2 may be inserted between the metallic Ti layer and the three-dimensional substrate described above.
- Although the various embodiments disclosed herein are described as using TiO2, wherever TiO2, is discussed, other materials such as thin films of porous semiconductors and dielectrics with nano-engineered structures can be used without departing from the teachings herein. Such other thin-film porous materials include but are not limited to silicon; Al2O3; GaN; GaAs; Ge; silica; carbon; oxides of niobium, tantalum, zirconium, cerium, tin, and vanadium. These materials also apply to the underneath planar and three-dimensional substrates or supporting layers. The same processing methods can also be used in device fabrications.
- As will be discussed, catalysts and/or conductors are placed on the internal and external surfaces of the porous semiconductor to create a plurality (and preferably, and large number) of solid state junctions. The catalysts and/or conductors that can be used to form the solid-state junctions with the porous nano-engineered semiconductor or dielectric network(s) can be noble metals such as but are not limited to Pt, Au, or Pd. These conductors and/or catalysts can be deposited using a number of methods, including but not limited to using nanoparticles or/and metal salts in solvents, pastes, or colloids; thin film deposition followed by annealing to nucleate the formation of nano-particles or a combination of pastes/solvent/deposition methods; chemical vapor deposition (CVD); sputtering; evaporation; atomic layer deposition (ALD); or solgel processes.
- Turning to
FIG. 2 , a mechanism for energy conversion is described.FIG. 2 depicts an energy band diagram 200 for a catalyst-nanowire interface for an energy conversion device. Fuel plusoxidizer 205 comes into contact with thecatalyst 210, which oxidizes upon contact. The oxidizedfuel 210 injectselectrons 240 into theconduction band 220 of thesemiconductor 215. There, theelectrons 240 encounter a Schottky-likepotential barrier 225 between thesemiconductor 215 and thecatalyst 210, which may be a conductor, and may also be a top electrode layer (not shown) that embeds the catalyst. Theelectrons 240 are then directed towards the bottom contact (not shown) by the built-in electric field at the interface between thecatalyst 210 and thesemiconductor 215. Theelectrons 240 travel in the external circuit (not shown), thereby transferring their energy to the load before returning to the catalyst site via the top contact (also not shown). Theelectrons 240 then complete the reaction by reducing the oxidized reactants producing the final products. The output voltage of the circuit shown inFIG. 2 will depend on the potential offset (barrier) between the Fermi level in the catalyst and the conduction band of the semiconductor. - Alternatively, the semiconductor/catalyst surface may favor one of the oxidation or reduction reactions, effectively splitting the two reactions. This can create an electro-chemical potential gradient between the catalyst site and the semiconductor surface, which can induce an electro-motive force (EMF) in an external circuit and drive a load as shown in
FIG. 3 . In other words, as schematically shown inFIG. 3 , the oxidation-reduction (redox) reactions induce an electron's chemical potential difference between the catalyst sites and the semiconductor sites, which in turn gives rise to an EMF (Δμ=V2−V1). - The various embodiments described herein are chemical energy conversion devices that convert chemical energy to electricity. A limiting factor of prior devices using similar electron transport mechanisms as those described herein was the rate at which catalytic reactions could take place. Electricity generation of chemical energy converter devices like those described herein is proportional to the reaction rate and fuel conversion, and the reaction rate and fuel conversion are proportional to at least (i) the temperature at which the catalytic reactions take place, and (ii) the total surface areas of the catalyst. Increasing the surface area, however, generally leads to devices that become large two-dimensionally, and thus increases the size of the device, which is undesirable. Likewise, temperatures can be increased to enhance reaction rate, but increasing temperature can also be undesirable. The various embodiments described herein overcome these problems by increasing the surface area of the chemical energy converter device without significantly increasing the two-dimensional area of such devices.
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FIG. 4 illustrates an embodiment of a chemicalenergy converter device 400. In particular,FIG. 4 illustrates adevice having nanowires 415, which are formed on a substrate layer (not shown), where the substrate layer can comprise a porous thin film of dielectric or semiconductor, such as a titanium oxide (TiO2). The substrate layer is formed on anelectrode 410, which can be made with a metal conductive material or highly n-doped semiconductor material.Electrode 410 can be below the substrate layer or in-between the substrate and thenanowires 415.Nanowires 415 can comprise either a nano-engineered porous semiconductor material or a nano-engineered porous dielectric. Either way,nanowires 415 form an electrically conductive array.Catalyst material 420 is on the surface of thenanowire 415, although intervening materials are possible as well. Thecatalyst material 420 can be platinum particles, where each platinum particle forms a Schottky diode junction with the semiconductor material forming thenanowires 415. In use, fuel orenergy source 430 such as hydrogen, or methanol or natural gas, and air, or a monopropellant energy source or fuel such as hydrogen peroxide comes in contact with thecatalyst 420, which causes electrons from thecatalyst 420 to be injected into thesemiconductor 405, which are then attracted to theelectrode 410. This generates electricity. Asecond electrode 425 is formed over thecatalyst 420, which, in conjunction with thebottom electrode 410 allow a circuit to be formed so that electrical current will flow and a voltage potential Vout is generated between the electrodes. -
Nanowires 415 provide several advantages that improve the overall efficiency. The first advantage is increased surface area, which is provided by both the use of aporous substrate 405 andnanowires 415. Porous three-dimensional structures have a high surface to volume ratio when compared to non-porous two-dimensional planar layers. In addition, thenanowires 415 themselves have surface area, meaning that eachnanowire 415 provides significantly more surface area than the same two-dimensional area would have provided were nonanowire 415 present. The additional surface area provided by theporous substrate 405 and the nanowires will have the ability to have more catalyst material disposed thereon, especially when compared to energy conversion devices that are two-dimensional. This is because presence of catalyst nano-particles, nano-clusters, or nano-wires on such a porous substrate provides more reaction sites for chemical reactions leading to increased reaction rates at lower temperatures. Another advantage is that porous network also facilitates diffusion of reactants to catalysts located on the internal surfaces of the nanowires and removal of reaction products away from the catalysts. - In an embodiment,
nanowires 415 are comprised of single crystal TiO2 nanowires, which enhance electron transport, can be synthesized in various simple inexpensive methods, such as growth from an epitaxial seed layer from a titanium source e.g. in a hydrothermal process. Thebottom contact 410 is a conductive substrate with a conductive layer that provides an epitaxial template for nanowire growth, e.g. FTO (fluorinated tin oxide) in the case of TiO2 nanowires. Thetop contact 425 has to electrically connect the porous network of the catalyst. The catalyst can be a paste or an electrolyte. Again, the conductor and or catalysts can be deposited used nano-particle pastes, nano-particle solvents, thin film depositions or any combinations thereof. -
FIG. 5 a illustrates another embodiment of an energy converter device comprising a three-dimensionalporous catalyst layer 505 intertwined three-dimensionally with porous semiconductor ordielectric layer 515 at anintertwining region 510, which in turn can be placed on aplanar substrate 525.Layer 515 can be constructed with TiO2 as discussed above, and can take the form of a honeycomb-like structure being either a nano-engineered structure having interconnecting walls defining pores, or nano-engineered structures with percolating networks. Either way, the honeycomb-like structure allows catalyst nano-particles from the catalyst layer to enter the spaces of the honeycomb structure and rest on the surface of the semiconductor ordielectric layer 515. It is this honeycomb structure that makeslayer 515 porous in three dimensions. These nano-particles can, for example, be platinum. The honeycomb-like structure of the semiconductor ordielectric layer 515 can be seen in the photographs ofFIGS. 5 b -5 c. - Likewise, the three-dimensional
porous catalyst layer 505 can comprise porous networks, individual nano-clusters/particles, or a combination of both, and can be constructed from, for example, platinum. As with porous semiconductor ordielectric layer 515, catalyst layer can take the form of a honeycomb-like structure. An exemplary three-dimensionalporous layer 505 can be seen in the photographs ofFIGS. 5 b-5 c . A feature of the intertwiningregion 510 is its large internal surface area where catalysts can be distributed throughout to construct a three-dimensional network of catalyst-semiconductor junctions. Anexemplary intertwining region 510 can be seen in the photographs ofFIGS. 5 b -5 c. -
Chemical energy converter 500 can optionally include a non-porous semiconductor ordielectric layer 520 deposited through standard deposition methods such as evaporation, chemical vapor deposition (CVD), sputtering, or atomic layer deposition (ALD), to provide a barrier layer between the substrate below and the porous materials above. - In the embodiment illustrated by
FIG. 5 , atop electrode 530 can be formed on part or all ofcatalyst layer 505. Likewise, abottom electrode 535 can be formed underneathplanar substrate 520. These two electrodes can be electrically connected to an external load to form a complete circuit. -
FIG. 6 shows yet another embodiment, where a plurality of chemicalenergy converter devices 500 as inFIG. 5(a) are arranged as n cells 602 a-602 n and are thus stacked on top of each other. Achemical energy converter 600 as shown inFIG. 6 is a multi-cell device structure with multiple layers of porous catalyst 605 a-605 n and porous semiconductor/dielectric networks 615 a-615 n that can be fabricated and integrated vertically on a planar two-dimensional substrate. In particular,chemical energy converter 600 can have abottom electrode 635, which has aplanar substrate 625 disposed thereon. A non-porous semiconductor ordielectric layer 620 can, if desired, be placed on theplanar substrate 625. Use of such alayer 620 acts as a barrier layer between substrate below and the porous materials above. The first cell 602 a of thechemical energy converter 600 comprises aporous layer 615 a comprised of a semiconductor or dielectric material, which can be constructed, for example, from TiO2. The first cell 602 a also comprises a three-dimensionalporous catalyst layer 605 a that is placed thereon using methods described above, and can comprise porous networks, individual nano-clusters/particles, or a combination of both.Catalyst layer 605 a can be constructed from, for example, platinum. At the interface betweenlayer 615 a andcatalyst layer 605 a, the materials intertwine three-dimensionally in a firstintertwined region 610 a. - To increase the amount of energy generated, chemical
energy converter device 600 hasadditional cells 602 b through 602 n stacked on top of each other. For example, asecond cell 602 b comprised of secondporous layer 615 b andsecond catalyst layer 605 b are formed above the first cell, with a three-dimensional intertwined region 612 a formed between the first cell 602 a andsecond cell 602 b. Likewise a third three-dimensionalintertwined region 610 b is formed between thesecond catalyst layer 605 b and second porous semiconductor ordielectric layer 615 b. - To further increase energy generation, n additional cells 602 n can be added to
chemical energy converter 600. Each of the additional cells is comprised of n second catalyst layers 605 n and n porous semiconductor ordielectric layers 615 n, with a three-dimensionalintertwined region 610 n formed at every interface between catalyst layers 605 n and porous semiconductor ordielectric layer 615 n. A three-dimensional intertwined region 612 a-612 m will be formed between each cell. Such multi-cell structures significantly increase the total catalyst-semiconductor interfacial area without including a larger device, thereby increasing fuel conversion via chemical reactions and corresponding electrical output. - Yet another embodiment illustrated in
FIG. 7 , in which achemical energy converter 700 has the integration of porous catalyst and porous semiconductor described inFIG. 5 constructed on a three-dimensional surface. Such a three-dimensional surface has surface area larger than a planar two-dimensional substrate, which results in increased fuel conversion and reaction rates, which in turn increases the amount of electricity generated. In particular, the embodiment described with reference toFIG. 7 has abottom electrode 735. A three-dimensional substrate 725 is fabricated thereon using, for example, a standard lithography patterning/etching process. In thisembodiment substrate 725 forms a patterned three-dimensional network micro-trenches 712. If desired, anon-porous layer 720 can be placed over the patternedsubstrate 725, which acts as a barrier layer between the substrate below and the porous materials above. As in the embodiment shown inFIG. 5 , a porous semiconductor/dielectric network 715 is placed over patterned substrate 725 (ornon-porous layer 720, if present). Acatalyst layer 705 is placed over the porous semiconductor/dielectric network 715, which also enters the pores of the porous semiconductor/dielectric network 715 to form anintertwining region 710. Asecond electrode 730 is placed above acatalyst layer 705, and in combination withfirst electrode 735, allows a voltage to appear, and hence allows for the use of the electricity generated by theconverter device 700. -
FIG. 8 shows an embodiment of a chemical energy converter 800 comprising a porous three-dimensional substrate/supportinglayer 825 where internal and external surfaces are covered with the integration of a porous semiconductor ordielectric layer 815 and aporous catalyst 805 similar to that described inFIG. 5 . In particular, chemical energy converter device 800 has abottom electrode 835, upon which a porous substrate/supportinglayer 825 is placed thereon. - A
second electrode 830 is placed abovelayer 825, and in combination withfirst electrode 835, allows a voltage to appear, and hence allows for the use of the electricity generated by the converter device 800. - Three-dimensional porous substrate is typically amorphous, which, upon annealing can crystallize. Nano-engineered structures typically consist of interconnected walls and wires forming a highly porous structure. The size of the pores, the thickness of the porous layer, among other physical and electrical properties, can be tuned by the processing parameters.
- Another method to create a nano-engineered porous network or layer of semiconductor or dielectric, for example TiO2, as a support to the catalyst above it, is to utilize a paste of TiO2 nano-particles to form thin films of porous layers/networks.
-
FIG. 9 a shows an embodiment having a three-dimensional textured substrate/supportinglayer 925 where the surface is covered with the integration of porous semiconductor ordielectric material layer 915 andporous catalyst 905 like the embodiment described inFIG. 5 . In particular, thechemical energy converter 900 illustrated inFIG. 9 has abottom electrode 935. Placed thereon is a three-dimensionaltextured substrate 925, which for example can be created by etching a silicon wafer. -
Textured substrate 925 forms peaks and valleys, thereby creating a three-dimensional reaction area. This three-dimensional reaction area increases the surface area available for chemical reactions, which increases the number of reactive sites that can take place during a particular amount of time for a given device size, thereby increasing the electrical generation capability of theenergy converter 900. If desired, anon-porous layer 920 can be placed over thetextured substrate 905. As above, thenon-porous layer 920 provides a barrier layer to separate the substrate below and the porous materials above. A porous or semiconductor ordielectric layer 915 is placed over the textured substrate 925 (or non-porous layer, if present). - A
catalyst layer 905 is placed over the porous semiconductor/dielectric network 915, which also enters the pores of the porous semiconductor/dielectric network 915 to form anintertwining region 910. Asecond electrode 930 is placed above acatalyst layer 905, and in combination withfirst electrode 935, allows a voltage to appear, and hence allows for the use of the electricity generated by theconverter device 900. - As in the other embodiments described herein, the use of a
textured substrate 905 results in an increased surface area for catalysis, which results in greater electricity generation than an energy converter having a planar two-dimensional substrate. -
FIG. 9 b is a photograph depicting an energy converter as inFIG. 9 a having a textured substrate. The photograph showssubstrate 925 having a semiconductor ordielectric layer 915 formed thereon.Catalyst layer 905 in the form of nano-particles is over the dielectric/semiconductor layer 915, and nano-particles enter the pores oflayer 915 to form an intertwining region.FIG. 9 c shows a planar view, where one can see the texture of the dielectric/semiconductor layer 915. - Device structures, and methods/processes to fabricate them, using nanowire arrays, nano-engineered structures, to form porous networks comprising solid-state junctions specifically to convert chemical into electrical energy are described herein. The device structures can be fabricated on a two-dimensional planar substrate or on a three-dimensional substrate. An exemplary method comprises fabricating one or more solid-state electric generators. The solid-state electric generators include one or more chosen from the group including a chemically energized solid-state electric generator. A solid state electric generator energizes charge carriers in a first material forming a junction with a second material. The second material has a finite energy gap with a conduction band that has an offset with the Fermi level of the first material.
- The present methods, devices and systems improve the energy conversion efficiency of junctions used in solid-state devices to generate electricity. An energy source injects charge carriers, e.g. electrons, on one side of a junction. When a net excess of charge carriers is injected from one side of a junction to the other, it will be forced to travel in the external circuit by the electric field. The result is the conversion of chemical energy into the useful form of an electrical energy. An element of the embodiments is that the efficiency of this process is improved when the charge transport or mobility is improved in the semiconducting material.
- An alternative mechanism for generating power is creating an electrochemical potential difference between the nanowire network or nano-engineered porous networks/layers and the catalyst which can act as an electromotive force (EMF). The semiconductor/catalyst surface may favor one of the oxidation or reduction reactions, effectively splitting the two reactions. This can create an electro-chemical potential gradient between the catalyst site and the semiconductor surface which can induce an electro-motive force (EMF) in an external circuit and drive a load.
- One embodiment includes nanowire array or nano-engineered porous networks/layers made from dielectric or semiconductor including but not limited to, for example, rutile TiO2, anatase TiO2, poly-crystalline TiO2 porous TiO2, ZrO2, SrTiO3, BaTiO3, Sr_x-Ba_y-TiO_z, LiNiO, silicon, SiC; GaN; GaAs; Ge; silica; carbon; oxides of niobium, tantalum, zirconium, cerium, tin, vanadium, and LaSrVO3, and certain organic semiconductors, such as PTCDA, or 3,4,9,10-perylenetetracarboxylicacid-dianhydride. The subscripts x, y and z denote concentrations, per usual conventions. One advantage of SrTiO3 is that Schottky barriers on it may be unpinned, providing a relatively larger barrier compared to that of TiO2.
- The various chemical energy converter devices described herein use storable reactants including oxidizers, autocatalytic reaction accelerators, decelerators, and monopropellants. The liquid phase, such as liquid hydrogen peroxide H2O2 at standard pressure and temperature, are convenient because their heat of vaporization is used as coolant and the liquid is conveniently storable. Monopropellants such as H2O2 and monomethylhydrazine (MMH) are similarly convenient and energize the active surface of converters. Autocatalytic accelerators include monopropellants such as H2O2.
- One embodiment uses reactions and reactants to energize these excitations. The reactions, reactants and additives include at least monopropellants, high energy fuels with oxidizers, hypergolic mixtures, and additives and combinations of reactants known to produce autocatalytic specie, reactants chosen to accelerate reactions or to control reactions, and combinations thereof. The reactants and/or additives include but are not limited to the following reactants:
- Energetic Fuels More Storable than Ammonia:
-
- amine substituted ammonias
- Di-Methyl-Amine (CH3)2NH
- Tri-Methyl-Amine (CH3)3N
- Mono-Ethyl-Amine (C2H5)NH2
- Di-Ethyl-Amine (C2H5)2NH)
-
-
- Methanol, CH3OH
- Ethanol, EtOH CH3CH2OH
- Formic Acid, HCOOH
- diesel fuels
- gasoline
- alcohols
- slurries including solid fuels
- Carbon Suboxide, C3O2, CO═C═CO,
- Formaldehyde HCHO,
- Paraformaldehyde, =better HCHO)n, sublimeable to Formaldehyde gas. (Potentially a cell coolant at the same time).
-
-
- Carbon Monoxide
- Hydrogen
- Ammonia NH3
-
-
- Nitromethane, CH3NO2
- Nitromethane “cut” with Methanol=model airplane “glow plug” engine fuel
High Energy Fuels with Wide Fuel/Air Ratio: - Epoxy-Ethane, =Oxirane or Ethylene-Oxide CH2-CH2O
- 1,three-Epoxy-Propane=Oxetane and Tri-Methylene-Oxide=1,three-Methylene-Oxide CH2—(CH2)—CH2O
- Epoxy-Propane CH2-(CH2)-CH2O
- Acetylene, C2H2
- Diacetylene=1,three-Butadiyne
- 1,three-Butadiene CH2═CH—CH═CH2,
-
-
- Di-Ethyl-Ether or surgical ether
- Acetone=Di-Methyl-Ketone
-
-
- Cyclo-Propane
- Cyclo-Butane
- Hydrocarbons such as methane, propane, butane, pentane, etc.
-
-
- Methyl Formate HCOO—C2H5
- Formamide HCO—NH2
- N,N,-Di-Methyl-Formamide HCO—N—(CH3)2
- Ethylene-Diamine H2N—CH2—CH2—NH2
- Ethylene-Glycol
- 1,4-Dioxane=bimolecular cyclic ether of Ethylene-Glycol
- Paraldehyde (CH3CHO)3 cyclic trimer of Acetaldehyde
-
-
- Tetra-Nitro-Methane, C(NO2)4 . . . does not spontaneously decompose . . . just pass the two separate vapors over the reaction surface of the cell in the gas phase
- Hydrogen Peroxide H2O2
-
-
- Cyclo-Propane with Oxygen=surgical anesthetic, microjoules initiator
-
-
- UDMH=Unsymmetrical DiMethyl Hydrazine=1,1-DiMethyl Hydrazine (CH3)2NNH2
- UDMH is hypergolic usually with N2O4 and is a very potent carcinogen
- MMH MonoMethyl Hydrazine (CH3)HNNH2 hypergolic with any oxidizers, e.g. N2O4
-
-
- Hydrazine=H2NNH2 decomposed easily with a catalyst (usually Pt or Pd or Molybdenum Oxide
- Hydrazine Hydrate
- Although various embodiments have been described with respect to specific examples and subsystems, it will be apparent to those of ordinary skill in the art that the concepts disclosed herein are not limited to these specific examples or subsystems but extends to other embodiments as well. Included within the scope of these concepts are all of these other embodiments as specified in the claims that follow.
Claims (19)
1. An energy conversion device for conversion of chemical energy into electricity, comprising:
a first electrode;
a substrate connected to said first electrode;
a three-dimensioned textured porous semiconductor layer disposed over said substrate, said three-dimensioned textured porous semiconductor layer having a nano-engineered structure;
a porous catalyst material on at least a portion of said three-dimensioned textured porous semiconductor layer, wherein at least some of the porous catalyst material enters the nano-engineered structure of the three-dimensioned textured porous semiconductor layer to form an intertwining region, the porous catalyst material and the three-dimensioned textured porous semiconductor layer forming solid-state junctions, wherein the solid-state junctions are Schottky junctions; and
a second electrode, wherein electrons from the porous catalyst material are injected into the three-dimensioned textured porous semiconductor layer, and wherein an electrical potential is formed between the first electrode and a second electrode during chemical reactions between a fuel, the porous catalyst material and the three-dimensioned textured porous semiconductor layer.
2. The energy conversion device of claim 1 , wherein the substrate is patterned to create a three-dimensional surface, thereby providing increased surface area for chemical reactions.
3. The energy conversion device of claim 2 , wherein the substrate is patterned such that nano-wires are formed.
4. The energy conversion device of claim 2 , wherein the substrate is textured such that peaks and valleys are formed.
5. The energy conversion device of claim 1 , further comprising a non-porous semiconductor layer is in between the substrate and the three-dimensioned textured porous semiconductor layer
6. The energy conversion device of claim 1 , wherein the porous catalyst layer is formed with nano-particles.
7. The energy conversion device of claim 1 , wherein the porous catalyst layer is formed with nano-clusters.
8. The energy conversion device of claim 1 , wherein the porous catalyst layer is formed with nano-wires.
9. The energy conversion device of claim 1 , wherein the three-dimensioned textured porous semiconductor layer is formed with nano-particles.
10. The energy conversion device of claim 1 , wherein the three-dimensioned textured porous semiconductor layer is formed with nano-clusters.
11. The energy conversion device of claim 1 , wherein the three-dimensioned textured porous semiconductor layer is formed with nano-wires.
12. The energy conversion device of claim 1 , wherein the three-dimensioned textured porous semiconductor layer is a porous nano-engineered structure with percolating networks.
13. The energy conversion device of claim 1 , wherein the three-dimensioned textured porous semiconductor layer comprises a dielectric.
14. The energy conversion device of claim 13 , wherein the dielectric is a porous nano-engineered structure with percolating networks.
15. The energy conversion device of claim 13 , wherein the dielectric is formed with nano-particles.
16. The energy conversion device of claim 13 , wherein the dielectric is formed with nano-clusters.
17. The energy conversion device of claim 13 , wherein the dielectric is formed with the nano-wires.
18. The energy conversion device of claim 1 , where the three-dimensioned textured porous semiconductor layer are chosen from a group including rutile TiO2, anatase TiO2, poly-crystalline TiO2 porous TiO2, ZrO2, SrTiO3, BaTiO3, Sr_x-Ba_y-TiO_z, LiNiO, silicon, SiC, GaN, GaAs, Ge, silica, carbon, oxides of niobium, tantalum, zirconium, cerium, tin, vanadium, and LaSrVO3, and certain organic semiconductors, such as PTCDA, or 3,4,9,10-perylenetetracarboxylicacid-dianhydride.
19. The energy conversation device of claim 1 , wherein the fuel and the oxidizer comprise a monopropellant.
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US10379083B2 (en) * | 2016-01-04 | 2019-08-13 | Farshid Raissi | Electronic device for detection of viruses, bacteria, and pathogens |
KR102288596B1 (en) * | 2020-02-28 | 2021-08-11 | 한국과학기술연구원 | Catalyst electrode for fuel cell, manufacturing method thereof and a fuel cell comprising the catalyst electrode for fuel cell |
Family Cites Families (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6410083A (en) | 1964-08-29 | 1966-03-01 | ||
US3483040A (en) | 1966-06-27 | 1969-12-09 | North American Rockwell | Nuclear battery including photocell means |
US3694770A (en) | 1970-12-18 | 1972-09-26 | United Aircraft Corp | Liquid fuel gas dynamic mixing laser |
US3925235A (en) | 1972-10-30 | 1975-12-09 | Univ Missouri | Production of luminescence |
US3916338A (en) | 1972-11-07 | 1975-10-28 | Us Energy | Metal atom oxidation laser |
US4012301A (en) | 1975-07-28 | 1977-03-15 | Calspan Corporation | Method and apparatus for the initiation of chemical reactions |
US4045359A (en) | 1976-01-29 | 1977-08-30 | Nasa | Apparatus for photon excited catalysis |
US4407705A (en) | 1981-05-14 | 1983-10-04 | The United States Of America As Represented By The Secretary Of The Air Force | Production of negative ions of hydrogen |
DE3148570C2 (en) | 1981-12-08 | 1991-02-14 | Eltro GmbH, Gesellschaft für Strahlungstechnik, 6900 Heidelberg | Electrically excited CO ↓ ↓ 2 ↓ ↓ laser |
JPS60501913A (en) | 1983-07-25 | 1985-11-07 | クオンタム グル−プ インコ−ポレイテツド | Photoelectric control device |
US5057162A (en) | 1983-09-02 | 1991-10-15 | Tpv Energy Systems, Inc. | Thermophotovoltaic technology |
US4590507A (en) | 1984-07-31 | 1986-05-20 | At&T Bell Laboratories | Variable gap devices |
US4686550A (en) | 1984-12-04 | 1987-08-11 | American Telephone And Telegraph Company, At&T Bell Laboratories | Heterojunction semiconductor devices having a doping interface dipole |
US4634641A (en) | 1985-07-03 | 1987-01-06 | The United States Of America As Represented By The United States Department Of Energy | Superlattice photoelectrodes for photoelectrochemical cells |
US4753579A (en) | 1986-01-22 | 1988-06-28 | Piezo Electric Products, Inc. | Ultrasonic resonant device |
US4849799A (en) | 1986-07-31 | 1989-07-18 | American Telephone And Telegraph Company At&T Bell Laboratories | Resonant tunneling transistor |
US4756000A (en) | 1987-02-18 | 1988-07-05 | Macken John A | Discharge driven gold catalyst with application to a CO2 laser |
US5124610A (en) | 1989-03-03 | 1992-06-23 | E. F. Johnson Company | Tritiated light emitting polymer electrical energy source |
JPH02264101A (en) | 1989-04-03 | 1990-10-26 | Toshiba Corp | Combined cycle power plant |
US5293857A (en) | 1990-11-02 | 1994-03-15 | Stanley Meyer | Hydrogen gas fuel and management system for an internal combustion engine utilizing hydrogen gas fuel |
US5048042A (en) | 1990-11-19 | 1991-09-10 | Hughes Aircraft Company | Catalytic method for inhibiting deposit formation in methane Raman cells |
US5299422A (en) | 1991-07-26 | 1994-04-05 | Aisin Seiki Kabushiki Kaisha | Energy converter |
JPH05176564A (en) | 1991-12-26 | 1993-07-13 | Aisin Seiki Co Ltd | Actuator utilizing radiant pressure |
US5356484A (en) | 1992-03-30 | 1994-10-18 | Yater Joseph C | Reversible thermoelectric converter |
US5337329A (en) | 1992-07-07 | 1994-08-09 | Jack Foster | Fluid laser having a roughened, catalytic inner surface |
US5311009A (en) | 1992-07-31 | 1994-05-10 | At&T Bell Laboratories | Quantum well device for producing localized electron states for detectors and modulators |
US5362975A (en) | 1992-09-02 | 1994-11-08 | Kobe Steel Usa | Diamond-based chemical sensors |
US5674698A (en) | 1992-09-14 | 1997-10-07 | Sri International | Up-converting reporters for biological and other assays using laser excitation techniques |
US5698397A (en) | 1995-06-07 | 1997-12-16 | Sri International | Up-converting reporters for biological and other assays using laser excitation techniques |
US5736410A (en) | 1992-09-14 | 1998-04-07 | Sri International | Up-converting reporters for biological and other assays using laser excitation techniques |
US6399397B1 (en) | 1992-09-14 | 2002-06-04 | Sri International | Up-converting reporters for biological and other assays using laser excitation techniques |
US6159686A (en) | 1992-09-14 | 2000-12-12 | Sri International | Up-converting reporters for biological and other assays |
US5404712A (en) | 1992-10-06 | 1995-04-11 | University Of Tennessee Research Corporation | Laser initiated non-linear fuel droplet ignition |
US6238931B1 (en) | 1993-09-24 | 2001-05-29 | Biosite Diagnostics, Inc. | Fluorescence energy transfer in particles |
US6251687B1 (en) | 1993-09-24 | 2001-06-26 | Biosite Diagnostics, Inc. | Fluorescence energy transfer and intramolecular energy transfer in particles using novel compounds |
US5408967A (en) | 1993-10-22 | 1995-04-25 | Foster; Joseph S. | Gaseous fuel injector |
US5632870A (en) | 1994-05-13 | 1997-05-27 | Kucherov; Yan R. | Energy generation apparatus |
US5525041A (en) | 1994-07-14 | 1996-06-11 | Deak; David | Momemtum transfer pump |
DE69424190T2 (en) | 1994-09-12 | 2000-11-23 | Ibm | ELECTROMECHANICAL CONVERTER |
US20030100119A1 (en) | 1994-10-18 | 2003-05-29 | Symyx Technologies, Inc. | Combinatorial synthesis and screening of supported organometallic compounds and catalysts |
JPH08136546A (en) | 1994-11-15 | 1996-05-31 | Bio Sensor Kenkyusho:Kk | Method for analyzing substance |
KR0148597B1 (en) | 1994-11-23 | 1998-10-15 | 정선종 | Metal semiconductor junction schottky diode photonic device using strained layer structure |
US5740192A (en) | 1994-12-19 | 1998-04-14 | Kabushiki Kaisha Toshiba | Semiconductor laser |
US5587827A (en) | 1995-02-01 | 1996-12-24 | Hakimi; Hosain | Apparatus for compensating chromatic and polarization dispersion and frequency chirp in fiber optics and for pulse compression in laser systems |
US5917195A (en) | 1995-02-17 | 1999-06-29 | B.A. Painter, Iii | Phonon resonator and method for its production |
US5593509A (en) | 1995-03-17 | 1997-01-14 | Lockheed Idaho Technologies Company | Portable thermo-photovoltaic power source |
US5641585A (en) | 1995-03-21 | 1997-06-24 | Lockheed Idaho Technologies Company | Miniature ceramic fuel cell |
US5757833A (en) | 1995-11-06 | 1998-05-26 | The Furukawa Electric Co., Ltd. | Semiconductor laser having a transparent light emitting section, and a process of producing the same |
US5651838A (en) | 1995-12-14 | 1997-07-29 | Jx Crystals Inc. | Hydrocarbon fired room heater with thermophotovoltaic electric generator |
JP4018177B2 (en) | 1996-09-06 | 2007-12-05 | 株式会社東芝 | Gallium nitride compound semiconductor light emitting device |
US5955772A (en) | 1996-12-17 | 1999-09-21 | The Regents Of The University Of California | Heterostructure thermionic coolers |
US5999547A (en) | 1997-02-07 | 1999-12-07 | Universitat Constance | Tunable optical parametric oscillator |
JPH10227238A (en) | 1997-02-13 | 1998-08-25 | Nissan Motor Co Ltd | Electric energy supply device for vehicle |
US5932885A (en) | 1997-05-19 | 1999-08-03 | Mcdermott Technology, Inc. | Thermophotovoltaic electric generator |
US6084173A (en) | 1997-07-30 | 2000-07-04 | Dimatteo; Robert Stephen | Method and apparatus for the generation of charged carriers in semiconductor devices |
US6119651A (en) | 1997-08-04 | 2000-09-19 | Herman P. Anderson Technologies, Llp | Hydrogen powered vehicle, internal combustion engine, and spark plug for use in same |
GB9811483D0 (en) | 1998-05-29 | 1998-07-29 | Photonic Research Systems Limi | Luminescence assay using cyclical excitation wavelength sequence |
US6403874B1 (en) | 1998-11-20 | 2002-06-11 | The Regents Of The University Of California | High-efficiency heterostructure thermionic coolers |
US6396191B1 (en) | 1999-03-11 | 2002-05-28 | Eneco, Inc. | Thermal diode for energy conversion |
US7109408B2 (en) | 1999-03-11 | 2006-09-19 | Eneco, Inc. | Solid state energy converter |
US6114620A (en) | 1999-05-04 | 2000-09-05 | Neokismet, L.L.C. | Pre-equilibrium chemical reaction energy converter |
US6678305B1 (en) | 1999-05-04 | 2004-01-13 | Noekismet, L.L.C. | Surface catalyst infra red laser |
US7223914B2 (en) | 1999-05-04 | 2007-05-29 | Neokismet Llc | Pulsed electron jump generator |
US6649823B2 (en) | 1999-05-04 | 2003-11-18 | Neokismet, L.L.C. | Gas specie electron-jump chemical energy converter |
US6916451B1 (en) | 1999-05-04 | 2005-07-12 | Neokismet, L.L.C. | Solid state surface catalysis reactor |
US7371962B2 (en) | 1999-05-04 | 2008-05-13 | Neokismet, Llc | Diode energy converter for chemical kinetic electron energy transfer |
MXPA02004031A (en) | 1999-10-20 | 2004-08-23 | Neokismet Llc | Solid state surface catalysis reactor. |
MXPA02003978A (en) | 1999-10-20 | 2004-09-06 | Neokismet Llc | Surface catalyst infra red laser. |
US6903433B1 (en) | 2000-01-19 | 2005-06-07 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a schottky barrier |
EP1254478A4 (en) | 2000-01-19 | 2004-12-01 | Adrena Inc | A chemical sensor using chemically induced electron-hole production at a schottky barrier |
JP2001267332A (en) | 2000-03-17 | 2001-09-28 | Sumitomo Electric Ind Ltd | Field-effect power transistor and power device |
US20020045190A1 (en) | 2000-07-11 | 2002-04-18 | Wilson Robert B. | Encoding methods using up-converting phosphors for high-throughput screening of catalysts |
US6512532B2 (en) | 2000-08-17 | 2003-01-28 | Rohm Co., Ltd. | Thermal printhead, heating resistor used for the same, and process of making heating resistor |
JP2004528706A (en) | 2001-01-17 | 2004-09-16 | ネオキスメット エルエルシー | Electronic jump chemical energy converter |
US20020123592A1 (en) | 2001-03-02 | 2002-09-05 | Zenastra Photonics Inc. | Organic-inorganic hybrids surface adhesion promoter |
US6774300B2 (en) | 2001-04-27 | 2004-08-10 | Adrena, Inc. | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure |
US7008559B2 (en) | 2001-06-06 | 2006-03-07 | Nomadics, Inc. | Manganese doped upconversion luminescence nanoparticles |
WO2003003469A1 (en) | 2001-06-29 | 2003-01-09 | Neokismet, L.L.C. | Quantum well energizing method and apparatus |
US7510819B2 (en) * | 2003-11-10 | 2009-03-31 | Board Of Regents, University Of Houston | Thin film solid oxide fuel cell with lithographically patterned electrolyte and anode layers |
US7838165B2 (en) | 2004-07-02 | 2010-11-23 | Kabushiki Kaisha Toshiba | Carbon fiber synthesizing catalyst and method of making thereof |
US7345296B2 (en) * | 2004-09-16 | 2008-03-18 | Atomate Corporation | Nanotube transistor and rectifying devices |
US7939218B2 (en) * | 2004-12-09 | 2011-05-10 | Nanosys, Inc. | Nanowire structures comprising carbon |
AU2006318658B2 (en) | 2005-11-21 | 2011-07-28 | Nanosys, Inc. | Nanowire structures comprising carbon |
US20110275005A1 (en) | 2008-10-24 | 2011-11-10 | Nanosys, Inc | Membrane Electrode Assemblies With Interfacial Layer |
-
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EP2878025B1 (en) | 2021-02-17 |
US9437892B2 (en) | 2016-09-06 |
US20200176798A1 (en) | 2020-06-04 |
US10573913B2 (en) | 2020-02-25 |
EP2878025A1 (en) | 2015-06-03 |
WO2014018779A1 (en) | 2014-01-30 |
US20140030627A1 (en) | 2014-01-30 |
US20160248098A1 (en) | 2016-08-25 |
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