US20230253525A1 - Light emitting device - Google Patents
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- H01L33/005—Processes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
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- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/85—Arrangements for extracting light from the devices
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Abstract
The present disclosure provides a light emitting device including a substrate, a plurality of light emitting elements disposed on the substrate, a partition wall disposed on the substrate, a light conversion element, an encapsulation layer disposed on the light emitting element, an intermediate layer disposed between the light conversion element and one of the light emitting elements, and a protection layer disposed between the intermediate layer and the light emitting elements. The partition wall defines a plurality of cavities, and one of the cavities corresponds to one of the light emitting elements. The light conversion element is disposed in the one of the cavities.
Description
- This application is a continuation application of U.S. application Ser. No. 16/916,165, filed on Jun. 30, 2020. The content of the application is incorporated herein by reference.
- The present disclosure relates to a light emitting device and more particularly to a light emitting device including a high partition wall.
- 2. Description of the Prior Art
- Because the quantum dot materials can convert the light emitted from the light emitting element to the light with the required color, in order to increase the color saturation of the display device to improve the quality of display, the manufacturers in the related fields propose a plan for applying the quantum dot materials to the display device.
- The present method of manufacturing the light conversion element including quantum dot material is to inject the solution containing quantum dots into the opening of the black matrix through inkjet printing technique, and the solution is then dried to form the required light conversion element through baking. However, because the thickness of the present black matrix is excessively low, the solution injected into a single opening may easily overflow to the adjacent opening. Thus, the quantum dots overflowed to the adjacent opening would be mixed with the solution in the adjacent opening, such that the light generated from the adjacent opening has a problem of color mixing.
- According an embodiment of the present disclosure, a light emitting device is provided. The light emitting device includes a substrate, a plurality of light emitting elements disposed on the substrate, a partition wall disposed on the substrate, a light conversion element, an encapsulation layer disposed on the light emitting elements, an intermediate layer disposed between the light conversion element and one of the light emitting elements, and a protection layer disposed between the intermediate layer and the light emitting elements. The partition wall defines a plurality of cavities, and one of the cavities corresponds to one of the light emitting elements. The light conversion element is disposed in the one of the cavities.
- These and other objectives of the present disclosure will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the embodiment that is illustrated in the various figures and drawings.
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FIG. 1 schematically illustrates a cross-sectional view of the light emitting device according to the first embodiment of the present disclosure. -
FIG. 2 schematically illustrates each step of manufacturing the partition wall according to an embodiment of the present disclosure. -
FIG. 3 schematically illustrates the step of coating the second sub-layer. -
FIG. 4 schematically illustrates a cross-sectional view of the light emitting device according to a variant embodiment of the first embodiment of the present disclosure. -
FIG. 5 schematically illustrates a cross-sectional view of the light emitting device according to the second embodiment of the present disclosure. -
FIG. 6 schematically illustrates a cross-sectional view of the light emitting device according to the third embodiment of the present disclosure. -
FIG. 7 schematically illustrates a cross-sectional view of the light emitting device according to a variant embodiment of the third embodiment of the present disclosure. -
FIG. 8 schematically illustrates a cross-sectional view of the light emitting device according to the fourth embodiment of the present disclosure. -
FIG. 9 schematically illustrates a cross-sectional view of the light emitting device according to the fifth embodiment of the present disclosure. -
FIG. 10 schematically illustrates a cross-sectional view of the light emitting device according to the sixth embodiment of the present disclosure. -
FIG. 11 schematically illustrates the top views of light emitting devices according to different variant embodiments of the seventh embodiment of the present disclosure. -
FIG. 12 schematically illustrates the cross-sectional views along the line A-A′ and B-B′ shown inFIG. 11 . -
FIG. 13 schematically illustrates a cross-sectional view of the light emitting device according to the eighth embodiment of the present disclosure. -
FIG. 14 schematically illustrates the top views of the light emitting devices corresponding to a single opening according to different variant embodiments of the eighth embodiment of the present disclosure. -
FIG. 15 schematically illustrates a cross-sectional view of the light emitting device according to the ninth embodiment of the present disclosure. -
FIG. 16 schematically illustrates a cross-sectional view of the light emitting device according to a variant embodiment of the ninth embodiment of the present disclosure. -
FIG. 17 schematically illustrates the method of manufacturing the partition wall and the layers on the substrate according to different variant embodiments of the tenth embodiment of the present disclosure. - The present disclosure may be understood by reference to the following detailed description, taken in conjunction with the drawings as described below. It is noted that, for purposes of illustrative clarity and being easily understood by the readers, various drawings of this disclosure show a portion of the light emitting device, and certain elements in various drawings may not be drawn to scale. In addition, the number and dimension of each element shown in drawings are only illustrative and are not intended to limit the scope of the present disclosure.
- Certain terms are used throughout the description and following claims to refer to particular elements. As one skilled in the art will understand, electronic equipment manufacturers may refer to an element by different names. This document does not intend to distinguish between elements that differ in name but not function. In the following description and in the claims, the terms “comprise”, “include” and “have” are used in an open-ended fashion, and thus should be interpreted to mean “include, but not limited to . . . ”.
- The direction terms used in the following embodiment such as up, down, left, right, in front of or behind are only the directions referring to the attached figures. Thus, the direction terms used in the present disclosure are for illustration, and are not intended to limit the scope of the present disclosure. It should be noted that the elements which are specifically described or labeled may exist in various forms for those skilled in the art. Besides, when a layer is referred to as being “on” another layer or substrate, it may be directly on the other layer or substrate, or maybe on the other layer or substrate, or intervening layers may be included between other layers or substrates.
- Besides, relative terms such as “lower” or “bottom”, and “higher” or “top” may be used in embodiments to describe the relative relation of an element to another element labeled in figures. It should be understood that if the labeled device is flipped upside down, the element in the “lower” side may be the element in the “higher” side.
- The ordinal numbers such as “first”, “second”, etc. are used in the specification and claims to modify the elements in the claims. It does not mean that the required element has any previous ordinal number, and it does not represent the order of a required element and another required element or the order in the manufacturing method. The ordinal number is only used to distinguish the required element with a certain name and another required element with the same certain name.
- It should be noted that the technical features in different embodiments described in the following may be replaced, recombined, or mixed with one another to constitute another embodiment without departing from the spirit of the present disclosure.
- In the present disclosure, the partition wall may block the light conversion ink filled in the cavity thereof from overflowing, thereby mitigating the problem of color mixing, in which the light conversion ink may for example include fluid-like liquid chemical mixing solution (color conversion ink, liquid color conversion, color conversion resist or color conversion resin) including such as quantum dots, phosphor, pigment, fluorescent material, or the like. In the present disclosure, the light emitting device with the partition wall may be any kind of device capable of converting the color of the light source light into another color. For example, the light emitting device may be a display device, an antenna device, a sensing device or a tiled device, but not limited thereto. The light emitting device maybe a foldable light emitting device or a flexible light emitting device. The display device may for example include self-emissive display device such as organic light emitting diode (OLED) display device or inorganic light emitting diode display device, or includes non-self-emissive display equipment such as liquid crystal display device, but not limited thereto. The inorganic light emitting diode may for example include mini light emitting diode (mini LED), micro light emitting diode (micro LED) or quantum dot (QD) light emitting diode (such as QLED or QDLED). The antenna device may for example be a liquid crystal antenna, but not limited thereto. The tiled device may for example be a display tiled device or an antenna tiled device, but not limited thereto. It should be noted that the light emitting device may be combinations of the above-mentioned devices, but not limited thereto. As described therein, the display device is regarded as the light emitting device to detail the contents of the present disclosure, but the present disclosure is not limited thereto.
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FIG. 1 schematically illustrates a cross-sectional view of the light emitting device according to the first embodiment of the present disclosure. As shown inFIG. 1 , the organic light emitting diode display device is taken as an example of the light emitting device of the present embodiment, but not limited thereto. Thelight emitting device 1 may include a plurality of light emittingelement 102, apartition wall 104 and a plurality oflight conversion element 106. Thepartition wall 104 may include a plurality of openings respectively corresponding to thelight emitting elements 102, and one of thelight conversion elements 106 is disposed in one of the openings. When thelight conversion element 106 is disposed in the opening, light source light generated by thelight emitting element 102 may be absorbed by thelight conversion element 106 and may be converted into a converted light with different color, in which the wavelength of the light source light generated by thelight emitting element 102 is shorter than the wavelength of the converted light generated by thelight conversion element 106. In the present embodiment, each of the openings may correspond to alight emitting element 102, and the openings may be divided into the opening OP11, the opening OP12 and the opening OP13, in which thelight conversion elements 106 may not be disposed in the opening OP13, such that the light source light generated by thelight emitting element 102 corresponding to the opening OP13 may directly pass through the opening OP13, and thelight conversion elements 106 may be disposed in the opening OP11 and the opening OP12. Furthermore, thelight conversion elements 106 may for example include alight conversion element 1061 and alight conversion element 1062 capable of generating converted light with different colors, and thelight conversion element 1061 and thelight conversion element 1062 may respectively be disposed in the opening OP11 and the opening OP12, such that thelight conversion element 1061 and thelight conversion element 1062 may respectively convert the light source light into the converted light with corresponding colors, and the output light with required colors may respectively be emitted from the opening OP11 and the opening OP12. Each of thelight emitting elements 102 may correspond to a sub pixel, and the final output light emitted from the opening OP11, the opening OP12 and the opening OP13 along the direction opposite to the top view direction VD may respectively be the display light of the sub pixels with different colors. For example, thelight emitting elements 102 may generate light source light with same color, such as blue light, and thelight conversion element 1061 and thelight conversion element 1062 located in the opening OP11 and the opening OP12 may for example generate the red converted light and the green converted light respectively. Therefore, the output light emitted from the opening OP11, the opening OP12 and the opening OP13 may respectively be the red light, the green light and the blue light, but the present disclosure is not limited thereto. In some embodiments, each of the opening OP11, the opening OP12 and the opening OP13 may have thelight conversion element 106 disposed therein, and thelight conversion elements 106 corresponding to the opening OP11, the opening OP12 and the opening OP13 may generate the converted lights with different colors. In such situation, thelight conversion elements 106 may for example generate the red light, the green light and the blue light, and thelight emitting elements 102 may for example generate the light source light with wavelength shorter than the wavelength of the red light, the wavelength of the green light and the wavelength of the blue light. For example, the light source light may be the blue light or the ultraviolet light, but not limited thereto. - In some embodiments, the
light conversion element 106 may for example include phosphor material, fluorescent material, quantum dots particles or other light conversion materials capable of converting the color of the light, and the light conversion materials mentioned above may be arranged and combined arbitrarily, but not limited thereto. - The
partition wall 104 may separate the converted light regions with different colors. For example, thepartition wall 104 may include light blocking materials. Thepartition wall 104 may for example have an optical density higher than 3.0, but not limited thereto. Specifically, the light blocking material may for example include color paste, binder-polymer, monomer, photo-initiator, solvent, additives or combinations of at least two of the above-mentioned materials. The color paste may include carbon pigment, titanium pigment, white pigment, red pigment, green pigment, blue pigment or combinations of at least two of the above-mentioned materials. The binder-polymer may include acrylate copolymer. The monomer may for example include acrylate monomer. The photo-initiator may for example include main agent, auxiliary agent, induce agent, chain reaction agent or combinations of at least two of the above-mentioned materials. The solvent may for example include the materials capable of adjusting the boiling point. The additives may for example include materials having coatable or adhesive properties. - In some embodiments, the
partition wall 104 may selectively include hydrophobic materials, such that the contact angle of thepartition wall 104 and the light conversion ink injected or dropped into the opening OP11 and the opening OP12 of thepartition wall 104 may be increased, thereby increasing the cohesion of the light conversion ink to reduce the possibility of overflowing of the light conversion ink. For example, the hydrophobic material may include fluoride, but not limited thereto. In some embodiments, the concentration of fluorine in thefirst sub-layer 104 a may be different from the concentration of fluorine in thesecond sub-layer 104 b. For example, the concentration of fluorine in thefirst sub-layer 104 a may be less than the concentration of fluorine in thesecond sub-layer 104 b, but not limited thereto. For example, the weight percentage concentration of fluorine in thefirst sub-layer 104 a may range from 0 to 3, such that the light conversion ink has good leveling property, and the weight percentage concentration of fluorine in thesecond sub-layer 104 b may range from 3 to 25, such that the light conversion ink may not be easily overflowed. - In the present embodiment, the
light conversion element 106 is formed by injecting or dropping the light conversion ink in the corresponding opening and then baking the light conversion ink through a baking process. Because the light conversion ink is a liquid fluid before it is solidified, the viscosity of the light conversion ink may be adjusted, and the light conversion ink may have high fluidity. Therefore, in order to reduce the possibility of overflowing of the light conversion ink from the corresponding opening due to its high fluidity, the thickness H1 of the surface SF1 of thepartition wall 104 may be higher than the thickness H2 of the surface SF2 of one of thelight conversion elements 106. In the present embodiment, the thickness H1 of the surface SF1 of thepartition wall 104 and the thickness H2 of the surface SF2 of thelight conversion elements 106 may be calculated from a level (such as light blocking layer 114) on which thepartition wall 104 and thelight conversion element 106 are disposed, but not limited thereto. When the surface SF2 of thelight conversion element 106 is an arc shape, the thickness H2 is the maximum thickness from the level on which thepartition wall 104 is disposed to the top point of the surface SF2, or, when the surface SF2 is nearly a plane, any position on the surface SF2 may be used to calculate the thickness H2. For example, the thickness H1 of thepartition wall 104 formed by baking may be higher than the thickness H2 of thelight conversion element 106 formed by baking, for example, the thickness H1 of thepartition wall 104 may range from 4 micrometers (μm) to 30 micrometers, but not limited thereto. Furthermore, because the thickness H1 of the single layer partition wall formed by coating once is less than 5 micrometers, in order to make thepartition wall 104 have enough thickness to block thelight conversion element 106 from overflowing, thepartition wall 104 may include multi-layer structure. For example, the multi-layer structure may include afirst sub-layer 104 a and asecond sub-layer 104 b, in which thefirst sub-layer 104 a is disposed on the substrate of thelight emitting device 1, thesecond sub-layer 104 b is disposed on thefirst sub-layer 104 a, and thefirst sub-layer 104 a and thesecond sub-layer 104 b may be formed in different steps. Under such condition, the thickness of thepartition wall 104 may be defined as the thickness of the entire stack of thefirst sub-layer 104 a and thesecond sub-layer 104 b. - In the present embodiment, the
light emitting device 1 may include afirst substrate 108 and asecond substrate 110, thelight emitting element 102 is disposed on thefirst substrate 108, and thepartition wall 104 and thelight conversion element 106 are disposed on thesecond substrate 110. Thus, according to the embodiment shown inFIG. 1 , the surface SF1 of thepartition wall 104 maybe the surface of thepartition wall 104 away from the second substrate 110 (or close to thesurface 108F of the first substrate 108) , the surface SF2 of thelight conversion element 106 is the surface of thelight conversion element 106 away from the second substrate 110 (or close to thesurface 108F of the first substrate 108) , and the surface SF3 of thepartition wall 104 and the surface SF4 of thelight conversion element 106 are respectively the surface of thepartition wall 104 and the surface of thelight conversion element 106 close to thesurface 110F of thesecond substrate 110. Besides, thefirst substrate 108 and thesecond substrate 110 may be assembled through theintermediate layer 112. Theintermediate layer 112 may for example be an adhesive layer or a sealant layer which are sticky, but not limited thereto. In some embodiments, the multi-layer structure may also include three or more sub-layers stacked in sequence. In some embodiments, thefirst substrate 108 and thesecond substrate 110 may respectively be a rigid substrate (such as glass substrate, plastic substrate, quartz substrate or sapphire substrate) or a flexible substrate (such as polyimide (PI) or polyethylene terephthalate (PET)), but not limited thereto. - In some embodiments, in order to reduce the possibility of breakage or cracking of the layer for coating during the coating of the
second sub-layer 104 b, the thickness H11 of thefirst sub-layer 104 a may for example be less than the thickness H12 of thesecond sub-layer 104 b, but not limited thereto. When thesecond sub-layer 104 b is disposed on thefirst sub-layer 104 a, the thickness H11 of thefirst sub-layer 104 a may be the distance between a surface (such as the surface SF3 of the partition wall) and another surface SF5 of thefirst sub-layer 104 a, and the thickness H12 of thesecond sub-layer 104 b may be the distance between a surface (such as the surface SF5 of thefirst sub-layer 104 a) and another surface (such as the surface SF1 of the partition wall) of thesecond sub-layer 104 b. For example, the thickness of the formedfirst sub-layer 104 a may range from 0.9 micrometers to 2.0 micrometers, and the thickness of thesecond sub-layer 104 b may range from 2.0 micrometers to 4.0 micrometers. In some embodiments, the taper angles of the sub-layers may be increased in sequence according to the stacking order, such that the sidewall of the sub-layer closer to the substrate on which the sub-layer is disposed (such as the second substrate 110) may be gentler, which indicates that the taper angle of the sub-layer away from the substrate on which the sub-layer is disposed may be higher than the taper angle of the sub-layer closer to the substrate on which the sub-layer is disposed. Through this design, the possibility of breakage or cracking of layer for coating during the coating of another sub-layer on the sub-layer may be mitigated. For example, thefirst sub-layer 104 a includes a first sidewall SW1, thesecond sub-layer 104 b includes a second sidewall SW2, and the taper angle θ1 of the first sidewall SW1 relative to thesecond substrate 110 is less than the taper angle θ2 of the second sidewall SW2 relative to thesecond substrate 110, wherein the taper angle θ1 of thefirst sub-layer 104 a may be the included angle of the first sidewall SW1 and a surface of thefirst sub-layer 104 a close to the second substrate 110 (such as the surface SF3 of the partition wall), and the taper angle θ2 of thesecond sub-layer 104 b may be the included angle of the second sidewall SW2 and thesecond sub-layer 104 b close to the second substrate 110 (that is, the surface SF5 of thefirst sub-layer 104 a). Through this design, the possibility of breakage or cracking of layer for coating during the coating of another sub-layer on the sub-layer may be reduced. The detailed description will be further described in the method of manufacturing thelight emitting device 1 below. For example, the taper angle θ1 of thefirst sub-layer 104 a may range from 35 degrees to 85 degrees, and the taper angle θ2 of thesecond sub-layer 104 b may range from 75 degrees to 90 degrees, but not limited thereto. Mainly, the sidewall of the sub-layer close to the substrate on which the sub-layer is disposed needs to have a gentle slope to reduce the possibility of the problems during the manufacturing process. - In some embodiments, the bottom widths of the sub-layers may be reduced in sequence according to the stacking order, in which the bottom width of the sub-layer may be the width of the surface of the sub-layer close to the substrate on which the sub-layer is disposed in a horizontal direction. For example, the bottom width W1 of the
first sub-layer 104 a (the width of thefirst sub-layer 104 a close to thesecond substrate 110 in the horizontal direction) maybe higher than the bottom width W2 of thesecond sub-layer 104 b (the width of thesecond sub-layer 104 b close to thesecond substrate 110 in the horizontal direction), such that thefirst sub-layer 104 a has enough area for disposing thesecond sub-layer 104 b. The horizontal direction may for example be the first direction D1 or the second direction D2. - In some embodiments, the
light emitting device 1 may selectively include alight blocking layer 114 having a function of selecting the light with specific wavelength and being disposed between thelight conversion element 106 and thesecond substrate 110, such that thelight blocking layer 114 may block, suppress, reflect, and recycle the light source light with a specific wavelength generated by thelight emitting elements 102 from being emitted from the regions of thesecond substrate 110 corresponding to thelight conversion elements 106, thereby improving the purity of the output light emitted from the regions corresponding to the light conversion elements 106 (that is, the color of the output light may be close to the color of the converted light generated by the corresponding light conversion element 106). The structure of thelight blocking layer 114 may be multi-layers formed of alternately stacked distributed Bragg reflectors with different refractive index or a color filter (such as red photoresist, yellow photoresist, green photoresist or the like), but not limited thereto. In some embodiments, thelight blocking layer 114 may partially or completely extend to be located between thepartition wall 104 and thesecond substrate 110. In some embodiments, when the color of the light generated by thelight emitting element 102 may not be converted by thelight conversion element 106, thelight blocking layer 114 may include an opening OP14, corresponding to the opening OP13 of thepartition wall 104, but not limited thereto. - In some embodiments, the
light emitting device 1 may selectively include alight scattering layer 116 disposed in the opening OP13 and the opening OP14. The thickness H6 of thelight scattering layer 116 may be less than the thickness H1 of thepartition wall 104, so as to reduce the possibility of overflowing of the light scattering solution from the corresponding opening OP13 due to its high fluidity during the manufacturing process. In the present embodiment, the thickness H6 of the surface SF9 of thelight scattering layer 116 may be calculated from the level which is the same as the level of the surface SF3 of the partition wall 104 (such as the dotted line extended from the surface SF3 of thepartition wall 104 shown inFIG. 1 ), but not limited thereto. When the surface SF9 of thelight scattering layer 116 is an arc shape, the thickness H6 may be the maximum thickness from the level which is the same as the surface SF3 of thepartition wall 104 to the top point of the surface SF9, or, when the surface SF9 is nearly a plane, any position on the surface SF9 may be used to calculate the thickness H6. In the present embodiment, the surface SF9 of thelight scattering layer 116 is the surface of thelight scattering layer 116 away from thesecond substrate 110 on which thelight scattering layer 116 is disposed and close to thefirst substrate 108. Thelight scattering layer 116 may for example includes a plurality of scatteringparticles 116 a, but not limited thereto. The material of the scatteringparticles 116 a may for example include titanium oxide (TiO2) or structured particles having scattering property, but not limited thereto. In some embodiments, thelight blocking layer 114 may be formed between the formation of thepartition wall 104 and the formation of thelight conversion element 106, thus, thelight blocking layer 114 may be located in the opening OP11 and the opening OP12 of thepartition wall 104. - In some embodiments, because the opening OP11 and the opening OP12 of the
partition wall 104 are not completely filled with thelight conversion element 106, a functional layer may be optionally filled in the space of the opening OP11 and the opening OP12 which are not filled with thelight conversion element 106. In other embodiments, when the opening OP11 and the opening OP12 of thepartition wall 104 are completely filled with thelight conversion element 106, the functional layer may also be disposed on thelight conversion element 106, the present disclosure is not limited thereto. For example, another light scattering layer, a reflective layer, a planarization layer, a protection layer or an encapsulation layer may be disposed in the opening OP11 and the opening OP12 in which thelight conversion element 106 is disposed, and the planarization layer or the encapsulation layer may be disposed in the opening OP13 in which thelight conversion element 106 is not disposed. In the present embodiment, the optical transmissive layer (such as blue light transmissive layer) allowing the blue light that is not completely converted to penetrate through or the light reflective layer (such as non-blue light reflective layer) reflecting the completely converted light may be further disposed. The light scattering layer may be used to uniformly diffuse the converted light generated by thelight conversion element 106, and thelight conversion element 106 may for example include scattering particles. The reflective layer may be used to reflect the converted light generated by thelight conversion element 106 and make the converted light generated by thelight conversion element 106 be emitted toward thesecond substrate 110 from the opening OP11 and the opening OP12, thereby increasing the pure converted light emitted from thelight conversion element 106 to the outside of thesecond substrate 110. When thelight emitting device 1 is the device with a single substrate, the optical reflective layer (such as the blue light reflective layer) reflecting the blue light that is not completely converted or the light transmissive layer (such as the non-blue light transmissive layer) allowing the completely converted light to penetrate through may be disposed. For example, the reflective layer may include distributed Bragg reflectors, but not limited thereto. The planarization layer and the encapsulation layer may be used to protect thelight conversion element 106. The planarization layer may for example be a protection layer to protect thelight conversion layer 106, in which the planarization layer may for example include an alternately stacked structure of organic material layers and inorganic material layers to prevent moisture and oxygen from entering. The encapsulation layer may for example include organic packaging materials or inorganic packaging materials. - The
light emitting element 102 of the present embodiment may for example be an organic light emitting diode or an inorganic light emitting diode, but not limited thereto. In some embodiments, thelight emitting element 102 may for example be a mini light emitting diode, a micro light emitting diode or a quantum dot light emitting diode, but not limited thereto. In the present embodiment, the organic light emitting diode is taken as an example of the light emitting device. Thelight emitting device 1 may include a plurality ofpixel electrodes 118, anorganic layer 120 and acommon electrode 122 disposed on thefirst substrate 108 in sequence, and each of thepixel electrodes 118, a portion of theorganic layer 120 and a portion of thecommon electrode 122 may form alight emitting element 102, but not limited thereto. In some embodiments, theorganic layer 120 may include a plurality oflayers 120 a, in which thelayer 120 a may for example include organic light emitting layer, hole transport layer, hole injection layer, electron transport layer, electron injection layer and electric charge generation layer, but not limited thereto. In some embodiments, thelayer 120 a may also include a plurality of organic light emitting layers. In some embodiments, theorganic layer 120 may be a single organic light emitting layer, but not limited thereto. - In the present embodiment, the
light emitting device 1 may further include apixel defining layer 124 including a plurality of openings OP15, and each of thelight emitting element 102 is respectively disposed in the corresponding one of the opening OP15. Therefore, each of the openings OP15 may respectively correspond to one of the opening OP11, the opening OP12 and the opening OP13. Specifically, thepixel defining layer 124 may be disposed on thepixel electrodes 118, each of the openings OP15 may expose a portion of the corresponding one of thepixel electrodes 118 during the manufacturing process, and theorganic layer 120 and thecommon electrode 122 maybe sequentially stacked on thepixel defining layer 124 and extend to each of the opening OP15. Theorganic layer 120 of the present embodiment is formed on the entire surface of thepixel defining layer 124, but not limited thereto. In some embodiments, theorganic layer 120 may also be formed into multiple blocks which are respectively located in the corresponding openings OP15. In some embodiments, thepixel defining layer 124 and thepartition wall 104 may include the same light shielding material. Therefore, thepixel defining layer 124 may also be used to separate the lights with different colors. - The
light emitting device 1 may further include aprotection layer 126 at least partially covering thelight emitting element 102 to protect thelight emitting element 102 from oxidation by moisture or oxygen. In some embodiments, theprotection layer 126 may include multi-layer structure. For example, the multi-layer structure may include a plurality of inorganic material layers 126 a and a plurality of organic material layers 126 b which are alternately stacked, such as the stack of theinorganic material layer 126 a, theorganic material layer 126 b, theinorganic material layer 126 a, theorganic material layer 126 b and theinorganic material layer 126 a or the stack of theorganic material layer 126 b, theinorganic material layer 126 a, theorganic material layer 126 b and theinorganic material layer 126 a, but not limited thereto. In some embodiments, the multi-layer structure may include the stack of the plurality of inorganic material layers 126 a, but not limited thereto. - The
light emitting device 1 may further include a thinfilm transistor layer 128 to control the turn on/turn off state of thelight emitting element 102 and the brightness of the light generated by thelight emitting element 102. Taking the organic light emitting diode display device as an example, the thinfilm transistor layer 128 may include a plurality of drivingelements 128 a and a plurality of switch elements (not shown), and each of thelight emitting elements 102 may be controlled by at least one drivingelement 128 a and at least one switch element. That is, thepixel electrode 118 of each of thelight emitting elements 102 may be electrically connected to thecorresponding driving element 128 a, but not limited thereto. In some embodiments, the thinfilm transistor layer 128 may further include circuits to control the display of thelight emitting device 1, such as scan lines, data lines or other driving circuits, but not limited thereto. The structure of the thin film transistor of the thinfilm transistor layer 128 is not limited to the bottom-gate type transistor shown inFIG. 1 , and may for example be the top-gate type transistor or the low-temperature polysilicon transistor, but not limited thereto. - The method of manufacturing the
light emitting device 1 of the present embodiment will be described in detail in the following contents.FIG. 2 schematically illustrates each step of manufacturing the partition wall according to an embodiment of the present disclosure, andFIG. 3 schematically illustrates the step of coating the second sub-layer. For easier explanation, thelight blocking layer 114 is omitted inFIG. 2 , but not limited thereto. The method of manufacturing the light emitting device of the present embodiment will be described in detail below with reference toFIG. 1 toFIG. 3 . As shown inFIG. 1 , thefirst substrate 108 is provided at first, and then, the thinfilm transistor layer 128 is formed on thefirst substrate 108. After that, thelight emitting elements 102 are disposed on the thinfilm transistor layer 128. The process of disposing thelight emitting elements 102 may include forming thepixel electrode 118 which is electrically connected to the thinfilm transistor layer 128, forming thepixel defining layer 124, forming theorganic layer 120 and forming thecommon electrode 122. After that, theprotection layer 126 may be formed on thelight emitting elements 102. - In addition, as shown in
FIG. 1 andFIG. 2 , thesecond substrate 110 is provided, and thelight blocking layer 114 may be optionally formed on thesecond substrate 110. After that, thepartition wall 104 may be formed on thelight blocking layer 114. The formation method of thepartition wall 104 will be described in detail below. First, the step I may be performed to dispose the insulatinglayer 130 on thesecond substrate 130. The disposition of the insulatinglayer 130 may be performed by coating process, that is, the light shielding material is coated on thesecond substrate 110 by anozzle 132 to form the insulatinglayer 130. After that, the step II may be performed to dispose thesecond substrate 110 on which the insulatinglayer 130 is formed on aheated board 134 to bake the insulatinglayer 130, thereby removing the solvent in the insulatinglayer 130. Subsequently, the insulatinglayer 130 may be patterned through thephotomask 137, which is performing the exposure process of the step III. Thephotomask 137 may define the position of thepartition wall 104, and the developing process of the step IV may be performed to remove the portion of the insulatinglayer 130 which is not thepartition wall 104 through the developer, thereby defining thepartition wall 104 and the openings. For example, the insulatinglayer 130 may include photoresist material, and a portion of the insulatinglayer 130 may be irradiated with the light 136, such as ultraviolet light, in the exposure process. Therefore, after the exposure process, the solubility of different portions of the photoresist material to the developer may be different. In some embodiments, the insulatinglayer 130 may optionally include hydrophobic material to improve the cohesion of the light conversion ink and reduce the possibility of overflowing of the light conversion ink. For example, the hydrophobic material may include fluoride, but not limited thereto. According to the type of the photoresist material, the developer may remove the exposed portion or the non-exposed portion of the photoresist material. After that, the baking process of the step V may be performed to remove the developer and bake the remaining insulatinglayer 130, such that a single sub-layer (such as thefirst sub-layer 104 a) of thepartition wall 104 may be formed. After that, the step Ito the Step V may be performed again. After the step I to step V are repeatedly performed at least two times, at least another sub-layer (such as thesecond sub-layer 104 b) may be formed on the sub-layer. The number of repetition may be adjusted according to the required number of the sub-layer, which is not limited to the present embodiment, and the number of repetition may at least be one. It is worthy noted that thepartition wall 104 of the present embodiment is formed by performing the step I to step V repeatedly, therefore, thepartition wall 104 with enough thickness and uniform thickness may be formed. - As shown in
FIG. 3 , after thefirst sub-layer 104 a is formed and the step I is repeated, the surface SF6 of the insulatinglayer 130 on which thesecond sub-layer 104 b is coated may be higher than the surface SF5 of thefirst sub-layer 104 a, so as to reduce the possibility of breakage or cracking of the layer for coating the insulatinglayer 130 due to the shear stress of thefirst sub-layer 104 a, thereby reducing the problems of uneven thickness of the layer or incomplete coating of the insulatinglayer 130 due to breakage or cracking of coating. Furthermore, because the equipment used in coating of the insulatinglayer 130 includes a sensor used to detect the distance between thenozzle 132 and the coating surface, when the surface SF5 of thefirst sub-layer 104 a is higher than the surface SF6 of the insulatinglayer 130 of thesecond sub-layer 104 b, the sensor may easily shutdown due to the detection of approaching of the nozzle to the surface SF5 of thefirst sub-layer 104 a, and the parameters of the equipment needs to be further adjusted, resulting in prolonged production time and higher production costs. Besides, when the surface SF5 of thefirst sub-layer 104 a is higher than the surface SF6 of the insulatinglayer 130 of thesecond sub-layer 104 b, the ups and downs of the insulatinglayer 130 during coating may likely to be too large, resulting in uneven film thickness. Accordingly, in the method of the present embodiment, the surface SF6 of the insulatinglayer 130 may be higher than the surface SF5 of thefirst sub-layer 104 a through coating of thesecond sub-layer 104 b, and the problems in the process of forming a plurality of sub-layers may be improved. Moreover, by reducing the taper angle el of thefirst sub-layer 104 a, for example, the taper angle θ1 may range from 35 degrees to 85 degrees, the shear stress of thefirst sub-layer 104 a may be reduced when coating the insulatinglayer 130 of thesecond sub-layer 104 b, thereby reducing the problems of breakage or cracking. It should be noted that the surface SF6 of the insulatinglayer 130 is not baked, and the surface SF1 of thepartition wall 104 is baked in the present embodiment, therefore, the surface SF6 maybe different from the surface SF1, but not limited thereto. The surface SF6 and the surface SF1 may also be the same. - The formed
partition wall 104 and the disposed layers (such as thesecond substrate 110 or the light blocking layer 114) may define a plurality of cavities C1 respectively corresponding to the opening OP11, the opening OP12 and the opening OP13 shown inFIG. 1 . In the present embodiment, the opening OP11, the opening OP12 and the opening OP13 of thepartition wall 104 may form the cavity C1 with thesecond substrate 110 or the layers thereon. After thepartition wall 104 is formed, the light conversion ink may be injected or dropped into at least the part of the cavity C1. The light conversion ink may for example include light conversion material and solvent. For example, the light conversion ink may include quantum dot, fluorescent powder, phosphor powder, but not limited thereto. Accordingly, the light conversion ink may be injected or dropped into the opening OP11 and the opening OP12 through inkjet printing process, but not limited thereto. Because thepartition wall 104 of the present embodiment has enough thickness, such that the surface of thepartition wall 104 may be higher than the surface of the light conversion ink in the step of filling the light conversion ink, thepartition wall 104 can block the light conversion ink from overflowing, thereby reducing the problem of mixing color. After that, the light conversion ink is baked such that the light conversion ink is contracted toward thesecond substrate 110 to form thelight conversion element 106. In some embodiments, after thelight conversion element 106 is formed, the above-mentioned functional layers such as light scattering layer, reflective layer, planarization layer, protection layer or encapsulation layer may further be formed on thelight conversion element 106, but not limited thereto. After that, theprotection layer 126 and thepartition wall 104 are assembled through theintermediate layer 112 to form thelight emitting device 1 of the present embodiment. - In some embodiments, because the formation of the
partition wall 104, thelight conversion element 106 and other layers on thesecond substrate 110 would not affect the steps performed on thefirst substrate 108, the steps of forming thepartition wall 104, thelight conversion element 106 and other layers on thesecond substrate 110 may be performed before, after or simultaneously with the steps performed on thefirst substrate 108. In some embodiments, thepartition wall 104 may also be disposed on thefirst substrate 108 on which the thinfilm transistor layer 128 is disposed through the above-mentioned methods. - The light emitting device and the manufacturing method thereof of the present disclosure are not limited to the above-mentioned embodiments, and may include different embodiments or variant embodiments. In order to simplify the description, the elements of different embodiments and variant embodiments and the same element of the first embodiment will use the same label. In order to compare the difference between the first embodiment and different embodiments and variant embodiments, the following contents would focus on the difference between different embodiments or variant embodiments, and the repeated portion will not be redundantly described.
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FIG. 4 schematically illustrates a cross-sectional view of a light emitting device according to a variant embodiment of the first embodiment of the present disclosure. As shown inFIG. 4 , the difference between the light emittingdevice 2 of the present variant embodiment and the light emitting device of the first embodiment shown inFIG. 1 is that thelight emitting element 202 may be inorganic light emitting diode, such as mini light emitting diode, micro light emitting diode or quantum dot light emitting diode, but not limited thereto. In the present embodiment, thelight emitting element 202 may be disposed in the corresponding opening OP15 of thepixel defining layer 124, and thelight emitting element 202 may be electrically connected to thecorresponding pixel electrode 118 through aconductive element 240. Theconductive element 240 may for example include solder ball, conductive glue or other suitable conductive materials. Thelight emitting device 2 may further include afilling layer 242 surrounding thelight emitting elements 202, and thefilling layer 242 may include a plurality of openings OP26 respectively expose the correspondinglight emitting elements 202, such that thecommon electrode 222 may be electrically connected to thelight emitting elements 202 through the openings OP26. In the present embodiment, theprotection layer 226 may for example include the stack of a plurality of organic material layers and a plurality of inorganic material layers or the stack of a plurality of inorganic material layers. In some embodiments, the stack of the plurality of inorganic material layers or the stack of the plurality of organic material layers and the plurality of inorganic material layers may further include a plurality of first refractive index layers 226 a and a plurality of second refractive index layers 226 b, and the first refractive index layers 226 a and the second refractive index layers 226 b may be alternately stacked on thecommon electrode 222, in which the refractive index of the firstrefractive index layer 226 a is different from the refractive index of the secondrefractive index layer 226 b, such that theprotection layer 226 may allow the light with specific wavelength to penetrate and reflect the light with another specific wavelength. For example, the light source light emitted from thelight emitting element 202 with light source wavelength may penetrate through theprotection layer 226, and the converted light converted by thelight conversion element 106 with the converted wavelength would be reflected back to thelight conversion element 106 when the converted light encounters theprotection layer 226. For example, the firstrefractive index layer 226 a may include silicon oxide, and the secondrefractive index layer 226 b may include silicon nitride, but not limited thereto, and vice versa. When theprotection layer 226 includes the stack of the plurality of organic material layers and the plurality of inorganic material layers, the structure of theprotection layer 226 may be similar to theprotection layer 126 of the first embodiment shown inFIG. 1 , but not limited thereto. In some embodiments, the number of layers of theprotection layer 226 corresponding to the opening OP11 and the opening OP12 which are filled with thelight conversion element 106 maybe higher than the number of layers of theprotection layer 226 corresponding to the opening OP13 which is filled with thelight scattering layer 116, but not limited thereto. In some embodiments, the inorganic light emitting diode may for example be the face up type light emitting diode chip, the vertical structure type light emitting diode chip or the flip chip type light emitting diode chip. -
FIG. 5 schematically illustrates a cross-sectional view of a light emitting device according to a second embodiment of the present disclosure. As shown inFIG. 5 , the difference between the light emitting device 3 of the present embodiment and the light emitting device of the first embodiment shown inFIG. 1 is that the light emitting device 3 includes asingle substrate 308. Thesubstrate 308 of the present embodiment may for example be the first substrate of the first embodiment, but thepartition wall 304 and thelight conversion element 306 are disposed on thesubstrate 308. Therefore, the thinfilm transistor layer 128, thepixel defining layer 124, thelight emitting elements 102 and theprotection layer 326 are formed on thesubstrate 308. Besides, thepartition wall 304 is disposed on theprotection layer 326, thelight conversion elements 306 are disposed on theprotection layer 326, and thelight scattering layer 116 is disposed on theprotection layer 326. Accordingly, in the embodiment shown inFIG. 5 , the surface SF1 of thepartition wall 304 is the surface of thepartition wall 304 away from thesubstrate 308, the surface SF2 of thelight conversion element 306 is the surface of thelight conversion element 306 away from thesubstrate 308, and the surface SF3 of thepartition wall 304 and the surface SF4 of thelight conversion element 306 are respectively the surface of thepartition wall 304 close to thesubstrate 308 and the surface of thelight conversion element 306 close to thesubstrate 308. In the present embodiment, theprotection layer 326 may include a surface SF7, and thefirst sub-layer 104 a and thesecond sub-layer 104 b of thepartition wall 304 are formed on the surface SF7 of theprotection layer 326 in sequence. The light emitting device 3 of the present embodiment may optionally include alight scattering layer 344 and alight scattering layer 346, thelight scattering layer 344 is disposed between thelight conversion element 306 and theprotection layer 326, and thelight scattering layer 346 is disposed between thelight conversion element 306 and thelight blocking layer 314. In some embodiments, the light emitting device 3 may include one of thelight scattering layer 344 and thelight scattering layer 346. In some embodiments, thelight scattering layer 344 and thelight scattering layer 346 may include scatteringparticles particles light conversion element 306 may includelight conversion particles 306 a. The material of thelight conversion particle 306 a may for example include quantum dot material, fluorescent material or phosphor material, but not limited thereto. In some embodiments, thelight conversion layer 306, thelight scattering layer 344 and thelight scattering layer 346 may be integrated into a single layer, that is, the scatteringparticles 344 a, the scatteringparticles 346 a and thelight conversion particles 306 a may be disposed in thelight conversion element 306, in which the material of thelight conversion particles 306 a may for example include quantum dot material, fluorescent material or phosphor material, but not limited thereto. - In some embodiments, the light emitting device 3 may optionally include another
protection layer 348 to protect thelight conversion element 306. Theprotection layer 348 may at least cover thepartition wall 304, thelight blocking layer 314 and thelight scattering layer 116. For example, theprotection layer 348 may include multi-layer structure, such as the alternately stackedinorganic material layer 348 a, theorganic material layer 348 b, theinorganic material layer 348 a and theorganic material layer 348 b, but not limited thereto. In some embodiments, the multi-layer structure of theprotection layer 348 may also include the stack of the plurality of inorganic material layers 348 a. In some embodiments, when there is still space in the opening OP11, the opening OP12 and the opening OP13 of thepartition wall 304, at least the part of theprotection layer 348 may be disposed in the opening OP11, the opening OP12 and the opening OP13. - In some embodiments, the light emitting device 3 may optionally include a
light blocking layer 314. Thelight blocking layer 314 may include a firstlight blocking layer 314 a and a secondlight blocking layer 314 b respectively located in the opening OP11 and the opening OP12. The firstlight blocking layer 314 a and the secondlight blocking layer 314 b may respectively include color filters with different colors. For example, the firstlight blocking layer 314 a may include the color filter allowing the light generated from thelight conversion element 3061 to penetrate through, such as red color filter, and the secondlight blocking layer 314 b may include the color filter allowing the converted light generated from thelight conversion element 3062 to penetrate through, such as green color filter. In some embodiments, the firstlight blocking layer 314 a and the secondlight blocking layer 314 b may be the color filters with the same color, such as yellow color filter, which may block or absorb the light having a specific wavelength that is not required to be emitted from theprotection layer 348, and allow the converted light generated from thelight conversion element 3061 or thelight conversion element 3062 having a converted light wavelength to be emitted from theprotection layer 348, but not limited thereto. - In the present embodiment, the light emitting device 3 may optionally include a
hydrophobic layer 350 at least partially covering the surface of thepartition wall 304. When the light conversion ink is injected into the opening OP11 and the opening OP12 of thepartition wall 304, the contact angle between the light conversion ink and thehydrophobic layer 350 may be increased due to the hydrophobic property of thehydrophobic layer 350, such that the cohesion of the light conversion ink is increased, thereby reducing the overflow of the light conversion ink. - The manufacturing method of the light emitting device 3 of the present embodiment will be further described below. Referring to
FIG. 5 , in the manufacturing method of the light emitting device 3 of the present embodiment, the steps before the formation of theprotection layer 326 may be the same as the steps of forming the thinfilm transistor layer 128, thelight emitting elements 102 and thepixel defining layer 124 on thefirst substrate 108 in the first embodiment, and will not be redundantly described here. After thelight emitting elements 102 are formed, theprotection layer 326 may be formed on thelight emitting elements 102, for example, theinorganic material layer 126 a, theorganic material layer 126 b, theinorganic material layer 126 a and theorganic material layer 126 b may be formed on thelight emitting elements 102 in sequence. After that, thepartition wall 304 is formed on theprotection layer 326. In the present embodiment, thefirst sub-layer 104 a and thesecond sub-layer 104 b are formed on theprotection layer 326 in sequence, and the thickness of thefirst sub-layer 104 a is less than the thickness of thesecond sub-layer 104 b. The method of forming the partition wall in the present embodiment may be the same as the method in the first embodiment, and will not be redundantly described here. - After the
partition wall 304 is formed, a hydrophobic surface treatment may be performed on thepartition wall 304 to form ahydrophobic layer 350 on the exposed surface of thepartition wall 304. Thehydrophobic layer 350 may include hydrophobic material such as fluoride or other hydrophobic material, but not limited thereto. After that, a plurality of inorganic material layers 327 may optionally be formed on theprotection layer 326 that is in the opening OP11 and the opening OP12 of thepartition wall 304. The material of the inorganic material layers 327 may include silicon nitride or silicon oxide, in which the refractive indexes of the stacked inorganic material layers 327 may be different from each other, such that a specific wavelength of the light which can penetrate through the inorganic material layers 327 and another specific wavelength of another light which can be reflected by the inorganic material layers 327 may be chosen. For example, the light source light emitted from thelight emitting element 102 with the light source wavelength may penetrate through the plurality of inorganic material layers 327, and the converted light converted by thelight conversion element 306 with the converted light wavelength may be reflected back to thelight conversion element 306 when it encounters the plurality of inorganic material layers 327, or the plurality ofinorganic material layer 327 may be located in theprotection layer 326, but not limited thereto. That is, the combination or separation of theinorganic material layer 327 and theprotection layer 326 may be decided according to different optical demands, structures, or thicknesses of the protection layer. Then, thelight scattering layer 344, thelight conversion element 306 and thelight scattering layer 346 may be formed in the opening OP11 and the opening OP12 of thepartition wall 304. The method of forming thelight scattering layer 344, thelight conversion element 306 and thelight scattering layer 346 may for example include forming thelight scattering layer 344, thelight conversion element 306 and thelight scattering layer 346 in the opening OP11 and the opening OP12 in sequence, but not limited thereto. After that, thelight scattering layer 116 may be formed in the opening OP13 of thepartition wall 304. In some embodiments, the step of forming thelight scattering layer 116 may be performed before the steps of forming thelight scattering layer 344, thelight conversion element 306 and thelight scattering layer 346. Then, theprotection layer 348 may be formed on thepartition wall 304, thelight blocking layer 314 and thelight scattering layer 116 to form the light emitting device 3 of the present embodiment. In the present embodiment, because the inorganic material layers 327 are manufactured in the opening OP11 and the opening OP12, the thickness H2 of thelight conversion element 306 may for example be the distance from the surface SF7 of theprotection layer 326 to the surface of thelight conversion element 306. Similarly, the thickness H6 of thelight scattering layer 116 maybe defined as the distance from the surface SF7 of theprotection layer 326 to the surface of thelight scattering layer 116. -
FIG. 6 schematically illustrates a cross-sectional view of a light emitting device according to a third embodiment of the present disclosure. As shown inFIG. 6 , the difference between the light emitting device 4 of the present embodiment and the light emitting device of the second embodiment shown inFIG. 5 is that thesecond sub-layer 404 b of thepartition wall 404 may not be completely disposed on the surface SF5 of thefirst sub-layer 404 a. In the present embodiment, thesecond sub-layer 404 b may be in contact with theprotection layer 426. For example, thesecond sub-layers 404 b located at two sides of the opening OP11, two sides of the opening OP12 and two sides of the opening OP13 may be shifted toward the same direction, such as the first direction D1 or the direction opposite to the first direction D1. Accordingly, in the top view direction VD, a distance D is included between the endpoint of thesecond sub-layer 404 b contacting theprotection layer 426 and the endpoint of thefirst sub-layer 404 a contacting theprotection layer 426 and adjacent to the same opening (such as the opening OP12) as the endpoint of thesecond sub-layer 404 b. In some embodiments, each of the distances D may be the same, such that the size of the opening OP11, the size of the opening OP12 and the size of the opening OP13 may be the same. Alternatively, at least two of the distances D may be different from each other, such that the size of the opening OP11, the size of the opening OP12 and the size of the opening OP13 may be different. In some embodiments, the distance D may be a positive value or a negative value, that is, the shifted direction of thesecond sub-layer 404 b relative to the correspondingfirst sub-layer 404 a may be the first direction D1 (positive value) or the direction opposite to the first direction D1 (negative value). The size of the opening OP11, the size of the opening OP12 and the size of the opening OP13 may be adjusted by adjusting the distance D and/or adjusting the shifted direction of thesecond sub-layer 404 b relative to the correspondingfirst sub-layer 404 a, therefore, the aperture ratio of the sub pixels maybe adjusted, thereby adjusting the chromaticity of white light displayed by the light emitting device 4. In some embodiments, thesecond sub-layer 404 b located at one side of one of the opening OP11, the opening OP12 and the opening OP13 may completely be located above thefirst sub-layer 404 a, and the surface SF8 of thesecond sub-layer 404 b located at another side of the one of the opening OP11, the opening OP12 and the opening OP13 that is close to thesubstrate 308 maybe in contact with theprotection layer 426. - The light emitting device 4 of the present embodiment may not include the
hydrophobic layer 350, thescattering layer 344 and thelight scattering layer 346, but not limited thereto. In some embodiments, the light emitting device 4 may optionally include at least one of thehydrophobic layer 350, thescattering layer 344 and thelight scattering layer 346. In the present embodiment, theprotection layer 426 may include the stack of the plurality of inorganic material layers 126 a, but not limited thereto. Because the inorganic material layers 126 a do not have leveling function, and the thickness of each of the inorganic material layers 126 a is nearly uniform, the surface of theprotection layer 426 may include a plurality ofcavities 426 c according to the ups and downs of thepixel defining layer 124, and each of thecavities 426 c may correspond to an opening OP15. In addition, thelight conversion element 306 and thelight scattering layer 116 would fill up thecorresponding cavity 426 c respectively. In some embodiments, any one of the protection layers mentioned above may be used as theprotection layer 426. In the present embodiment, the thickness H2 of thelight conversion element 306 may for example be the distance from the surface of theprotection layer 426 outside thecavity 426 c to the surface of thelight conversion element 306. Similarly, the thickness H6 of thelight scattering layer 116 may for example be the distance from the surface of theprotection layer 426 outside thecavity 426 c to the surface of thelight scattering layer 116. -
FIG. 7 schematically illustrates a cross-sectional view of a light emitting device according to a variant embodiment of the third embodiment of the present disclosure. As shown inFIG. 7 , the difference between the light emitting device 5 of the present embodiment and the light emitting device of the third embodiment shown inFIG. 6 is that thesecond sub-layers 504 b located at two sides of the opening may be shifted toward different directions, for example, may be shifted toward the first direction D1 and the direction opposite to the first direction D1 respectively. Accordingly, the size of the opening OP11, the size of the opening OP12 and the size of the opening OP13 may be different. For example, thesecond sub-layers 504 b located at two sides of the opening OP11 may be shifted toward the inner side of the opening OP11, and thesecond sub-layers 504 b located at two sides of the opening OP12 may be shifted toward the outer side of the opening OP12. Therefore, the size of the opening OP11 may be less than the size of the opening OP12, such that the aperture ratio of the sub pixel corresponding to the opening OP11 may be less than the aperture ratio of the sub pixel corresponding to the opening OP12, thereby adjusting the chromaticity of white light displayed by the light emitting device 5. - In the present embodiment, the thickness H3′ of the
pixel defining layer 524 may be less than the thickness H3 of thepixel defining layer 124 shown inFIG. 6 . It is worthy noted that because theprotection layer 426 shown inFIG. 6 includes the stack of the plurality of inorganic material layers 126 a, thecavities 426 c may be included on the surface of theprotection layer 426, such that thepartition wall 304 may be easily affected by thecavities 426 c to be broken or cracked during forming thepartition wall 304 on theprotection layer 426. In the present embodiment, by reducing the thickness H3′ of thepixel defining layer 524, the depth of thecavities 526 c of theprotection layer 526 may be reduced, thereby reducing the possibility of breakage of thepartition wall 504. The thickness H3′ of thepixel defining layer 524 may for example be the distance H3′ from the surface where thepixel defining layer 524 contacts the thinfilm transistor layer 128 to the surface of thepixel defining layer 524. For example, the thickness H3′ of thepixel defining layer 524 may be less than the thickness H1 (that is, the entire thickness of thefirst sub-layer 504 a and thesecond sub-layer 504 b) of thepartition wall 504. In some embodiment, when thelight emitting element 102 is the inorganic light emitting diode, the thickness H3′ of the surface of thepixel defining layer 524 may be less than the thickness of the surface of the light emitting diode, but not limited thereto. -
FIG. 8 schematically illustrates a cross-sectional view of a light emitting device according to a fourth embodiment of the present disclosure. As shown inFIG. 8 , the difference between the light emitting device 6 of the present embodiment and the light emitting device of the second embodiment shown inFIG. 5 is that theprotection layer 626 may includecavities 626 c, and thepartition wall 604 further includes athird sub-layer 604 c disposed in thecavity 626 c. It is worthy noted that through the disposition of thethird sub-layer 604 c, the possibility of transmission of the light L generated by thelight emitting element 102 to the adjacent openings may be reduced, thereby reducing color mixing of the adjacent sub pixels. Thecavities 626 c may not penetrate through any layer in theprotection layer 626 or may penetrate through at least one layer in theprotection layer 626. In the method of manufacturing the light emitting device 6 of the present embodiment, thecavities 626 c of theprotection layer 626 may be formed before the step of coating the insulating layer used to form thethird sub-layer 604 c, and then, thethird sub-layer 604 c may be formed in thecavities 626 c. After thethird sub-layer 604 c is formed, thefirst sub-layer 104 a and thesecond sub-layer 104 b maybe formed in sequence to form thepartition wall 604. The steps after the formation of thepartition wall 604 of the present embodiment may be similar to or the same as the steps of the second embodiment shown inFIG. 5 , and will not be redundantly described here. In some embodiments, the multi-layer structure of theprotection layer 626 may adopt any one of the protection layers mentioned above. In the present embodiment, because thethird sub-layer 604 c is filled into thecavity 626 c, the thickness H1 of thepartition wall 604 may for example be the distance from the surface SF7 of theprotection layer 626 outside thecavity 626 c to the surface of thesecond sub-layer 104 b. -
FIG. 9 schematically illustrates a cross-sectional view of the light emitting device according to the fifth embodiment of the present disclosure. As shown inFIG. 9 , the difference between the light emittingdevice 7 of the present embodiment and the light emitting device of the fourth embodiment shown inFIG. 6 is that thelight emitting device 7 may further include anotherprotection layer 754 disposed on theprotection layer 626. In the present embodiment, theprotection layer 754 may include an opening OP71, an opening OP72 and an opening OP73, thelight conversion element 3061 is disposed in the opening OP71, thelight conversion element 3062 is disposed in the opening OP72, and thelight scattering layer 116 is disposed in the opening OP73. In the method of manufacturing thelight emitting device 7 of the present embodiment, after thecavities 626 c are formed, the third sub-layer 704 c may be filled into thecavities 626 c of theprotection 626, and the third sub-layer 704 c may be one sub-layer of thepartition wall 704. Then, anotherprotection layer 754 may be formed on theprotection layer 626 and the third sub-layer 704 c. After that, the opening OP71, the opening OP72, the opening OP73 and the opening OP77 may be formed between the protection layers 754, in which the opening OP77 may be disposed on the third sub-layer 704 c. The opening OP71, the opening OP72 and the opening OP73 may respectively be disposed on the corresponding one of thelight emitting elements 102. Then, thelight conversion element 3061, thelight conversion element 3062 and thescattering layer 116 are respectively filled into the opening OP71, the opening OP72 and the opening OP73, and thefirst sub-layer 704 a and thesecond sub-layer 704 b are filled into the corresponding opening OP77. The filling order of thelight conversion element 3061, thelight conversion element 3062, thelight scattering layer 116, thefirst sub-layer 704 a and thesecond sub-layer 704 b may be replaced, exchanged, or determined according to the heat resistances of the materials thereof, but not limited thereto. The advantage of the above-mentioned structure is that the thickness of the formedpartition wall 704 may be higher than the thickness of thelight conversion element 3061, the thickness of thelight conversion element 3062 and the thickness of thelight scattering layer 116, thereby reducing the overflow of the light conversion ink and preventing color mixing. The third sub-layer 704 c may reduce the transmission of the light L generated from thelight emitting element 102 to the adjacent opening. Besides, thelight conversion element 3061, thelight conversion element 3062 and thelight scattering layer 116 respectively disposed in the opening OP71, the opening OP72 and the opening OP73 of theprotection layer 754 may be surrounded by theprotection layer 754, thereby improving the ability of moisture isolation and oxygen isolation of thelight conversion element 3061, thelight conversion element 3062 and thelight scattering layer 116 to effectively protect thelight conversion element 3061, thelight conversion element 3062 and thelight scattering layer 116. -
FIG. 10 schematically illustrates a cross-sectional view of a light emitting device according to a sixth embodiment of the present disclosure. As shown inFIG. 10 , the difference between the light emittingdevice 8 of the present embodiment and the light emitting device of the second embodiment shown inFIG. 5 is that aprotection layer 856 is disposed between thelight blocking layer 314 and thelight conversion element 306 to reduce the diffusion of the solvent material of thelight blocking layer 314 into thelight conversion element 306 to destroy the light conversion material. For example, thelight blocking layer 314 may include color filter, and the solvent material of the color filter may destroy the quantum dot material. Accordingly, the condition that the quantum dot material is destroyed by the solvent of the color filter may be reduced by disposing theprotection layer 856 between thelight blocking 314 and thelight conversion element 306. For example, theprotection layer 856 may adopt the structure of any protection layer mentioned above, such as the plurality of organic material layers and the plurality of inorganic material layers which are alternately stacked or the stack of the plurality of inorganic material layers. In the present embodiment, thepartition wall 804 may include threesub-layers partition wall 804 may have enough thickness, and thelight conversion element 306, theprotection layer 856 and thelight blocking layer 314 may be filled into the opening OP11 and the opening OP12. Besides, in the opening OP13, anotherprotection layer 857 may be disposed on thelight scattering layer 116. Theprotection layer 857 may also adopt the structure of any protection layer mentioned above. -
FIG. 11 schematically illustrates top views of light emitting devices according to different variant embodiments of the seventh embodiment of the present disclosure, andFIG. 12 schematically illustrates cross-sectional views respectively along a line A-A′and a line B-B′ shown inFIG. 11 . As shown in the portion P1 ofFIG. 11 and the portion corresponding to line A-A′ ofFIG. 12 , the difference between the variant embodiment of the present embodiment and the second embodiment is that thelight emitting device 9 may further include a plurality ofpartition structures 958 respectively disposed in the corresponding opening OP11, the opening OP12 and the opening OP13. Thepartition structures 958 may include the same light shielding material as thepartition wall 904, but not limited thereto. Specifically, each of the opening OP11, the opening OP12 and the opening OP13 of thepartition wall 904 of the present variant embodiment may correspond to a plurality of light emitting elements, that is, corresponding to a plurality of sub pixels. In the present variant embodiment, each of the opening OP11, the opening OP12 and the opening OP13 corresponding to four light emitting elements 902-1, 902-2, 902-3 and 902-4 arranged in an array may be taken as an example. Each of the opening OP11, the opening OP12 and the opening OP13 may be divided into four regions R1, R2, R3 and R4 by thepartition structure 958 to form four cavities on theprotection layer 326, and the light emitting element 902-1, the light emitting element 902-2, the light emitting element 902-3 and the light emitting element 902-4 are respectively located in the corresponding regions R1, R2, R3 and R4 in the top view direction VD. - For example, the thickness H4 of the
partition structure 958 may be less than the thickness H1 of thepartition wall 904, or the thickness H4 of thepartition structure 958 may be higher than the thickness H2 of the light conversion element. Through thepartition structure 958, the light conversion elements in each of the opening OP11, the opening OP12 and the opening OP13 may be divided into four portions 906-1, 906-2, 906-3 and 906-4 respectively located above the corresponding light emitting elements 902-1, 902-2, 902-3 and 902-4 and respectively corresponding to the sub pixels with the same color. In the present variant embodiment, the portions 906-1, 906-2, 906-3 and 906-4 of the light conversion element may be separated from each other, but not limited thereto. In addition, the light emitting elements 902-1, 902-2, 902-3 and 902-4 corresponding to the same opening OP11, the opening OP12 or the opening OP13 may be respectively electrically connected to thecorresponding driving element 128 a to be served as a plurality of sub pixels, that is, one drivingelement 128 a may correspond to one sub pixel, thereby improving the resolution of thelight emitting device 9. - In the method of manufacturing the
light emitting device 9 of the present variant embodiment, thepartition structure 958 may be formed before, after or simultaneously with thepartition wall 904. Then, the light conversion ink may be dropped into the corresponding opening OP11 and the opening OP12 through inkjet printing process. Through the disposition of thepartition structure 958, the dropped light conversion ink may flow into the cavities of the corresponding regions R1, R2, R3 and R4, thereby being divided into four portions. Accordingly, the light conversion element may be filled into a single opening OP11 or opening OP12 at one time instead of being filled into the single opening OP11 or opening OP12 multiple times, such that the time of inkjet printing may be saved. - As shown in the portion P2 of
FIG. 11 and the portion corresponding to line B-B′ofFIG. 12 , the difference between another variant embodiment of the present embodiment and the variant embodiment mentioned above is that theprotection layer 326 may include a plurality ofcavities 326R respectively corresponding to one of the opening OP11, the opening OP12 and the opening OP13. Each of the opening OP11, the opening OP12 and the opening OP13 may be divided into a plurality of regions R, R′, R″ and R″′ by thecavity 326R, and the regions R, R′, R″ and R″′ respectively correspond to thelight emitting elements cavity 326R, the light conversion ink dropped into the openings may be divided into four portions using thecavity 326R as the boundary. In the present embodiment, theportion 1006′, 1006″, 1006″′ and 1006″″ located in the same opening OP11, the same opening OP12 or the same opening OP13 may be filled into thecavity 326R and connected to each other. - In addition, in the present variant embodiment, the
light emitting elements same driving element 128 a, such that thelight emitting elements light emitting elements light emitting elements element 128 a through thesame pixel electrode 1018, but not limited thereto. Thelight emitting elements same driving element 128 a through different pixel electrodes. - In some embodiments, the portion P1 of the
partition structure 958 may be replaced by thecavity 326R of the second portion P2. In some embodiments, thecavity 326R of the portion P2 may be replaced by a portion of thepartition structure 958. In some embodiment, regardless of thepartition structure 958 or thecavity 326R, the surface of each of the portions 906-1, 906-2, 906-3 and 906-4 or the surface of each of theportions 1006′, 1006″, 1006″′ and 1006″″ of the light conversion element formed after baking process may include arc shape, such that the surface of each of the portions 906-1, 906-2, 906-3 and 906-4 or the surface of each of theportions 1006′, 1006″, 1006″′ and 1006″″ may match the optical demands. -
FIG. 13 schematically illustrates a cross-sectional view of a light emitting device according to an eighth embodiment of the present disclosure, andFIG. 14 schematically illustrates top views of the light emitting devices respectively corresponding to a single opening according to different variant embodiments of the eighth embodiment of the present disclosure. For clear description, the protection layer, the thin film transistor layer and the light blocking layer are omitted inFIG. 13 , but not limited thereto. The difference between the light emittingdevice 13 of the present embodiment and the light emitting device of the second embodiment is that thelight emitting device 13 further includes anauxiliary planarization layer 1360 disposed on thepixel defining layer 124 and located in the opening OP of thepartition wall 304. The thickness H5 of theauxiliary planarization layer 1360 may be less than the thickness H2 of thelight conversion element 306. Because the light conversion ink injected into the opening OP have fluidity when it is a non-solidified wet film and before the baking process, by disposing theauxiliary planarization layer 1360 in the opening OP, the overflow of light conversion ink out of thepartition wall 304 may be mitigated when the oblique is occurred during the dropping of the light conversion ink into the opening OP, and when the light conversion ink is not solidified and has fluid property theauxiliary planarization layer 1360 may help the light conversion ink filled into the opening OP with an uniform thickness to improve the uniformity of thickness of the bakedlight conversion element 306. Accordingly, the surface of the formedlight conversion element 306 may be flatter, and the flattenedlight conversion unit 306 may have more uniform optical effect. The portion of theauxiliary planarization layer 1360 at least disposed on thelight emitting element 102 may for example include transparent material, but not limited thereto. The surface of thelight conversion element 306 may be roughly flat, but not limited thereto. In some embodiments, the surface of thelight conversion element 306 may also be arc-shaped. The cross-sectional shape of theauxiliary planarization layer 1360 is not limited to trapezoid. - As shown in the portion P3 of
FIG. 14 , in the top view direction VD, theauxiliary planarization layer 1360 may include a plurality ofstring portions 1360 a respectively extending along the second direction D2. As shown in the portion P4 ofFIG. 14 , in the top view direction VD, theauxiliary planarization layer 1360 may include a plurality ofstring portions 1360 b respectively extending along the first direction D1. As shown in the portion P5 ofFIG. 14 , in the top view direction VD, theauxiliary planarization layer 1360 may include a plurality ofstring portions 1360 a and a plurality ofstring portions 1360 b, and thestring portions 1360 a and thestring portions 1360 b cross each other to form a grid structure. The first direction D1 and the second direction D2 of the present embodiment may be perpendicular to each other, but not limited thereto. In some embodiments, the extending direction of thestring portion 1360 a may not be perpendicular to the extending direction of thestring portion 1360 b. It is worthy noted that when the corner of the opening OP of thepartition wall 304 is a right angle in the top view direction VD, the light conversion ink may not be easily filled into the corners of the opening OP, such that the vacancy which is not filled with the light conversion ink may be easily produced, and the colors of the sub pixels may be below expectation. In the present embodiment, because the corners OPc of the opening OP of thepartition wall 304 has arc shape in the top view direction VD, the vacancy produced because the light conversion ink is not filled up the corners OPc of the opening OP may be reduced. -
FIG. 15 schematically illustrates a cross-sectional view of a light emitting device according to a ninth embodiment of the present disclosure. As shown inFIG. 15 , the difference between the light emittingdevice 14 of the present embodiment and the light emitting device of the second embodiment shown inFIG. 5 is that thelight emitting device 14 further includes anauxiliary electrode 1462 to reduce the difference of the resistance between thecommon electrode 122 of thelight emitting element 102 and an external voltage source or a peripheral circuit. Specifically, theauxiliary electrode 1462 is disposed between thecommon electrode 122 and theprotection layer 326, located below thepartition wall 304, and overlapped with thepartition wall 304. For example, theauxiliary electrode 1462 may have grid shape in the top view direction VD. It is worthy noted that in order to improve the brightness of output light of thelight emitting element 102, the thickness of thecommon electrode 122 needs to be less. Accordingly, by means of the disposition of theauxiliary electrode 1462, the resistances from the external voltage source or the peripheral circuit to thecommon electrode 122 corresponding to differentlight emitting elements 102 may be reduced or uniformed. In some embodiments, the material of theauxiliary electrode 1462 may include magnesium silver layer, nano-silver glue or other suitable conductive materials. In some embodiments, the material of theauxiliary electrode 1462 may be the same as thecommon electrode 122, but not limited thereto. - In the present embodiment, the thin
film transistor layer 128 of thelight emitting device 14 may further include a plurality ofconductive lines 128 b. In addition, before theauxiliary electrode 1462 is formed, a through hole TH may be formed in the thinfilm transistor layer 128, thepixel defining layer 124 and theorganic layer 120. For example, the through hole TH may be formed by laser drilling. Then, the conductive layer CL may be filled into the through hole TH, such that theauxiliary electrode 1462 formed on the conductive layer CL may be electrically connected to theconductive lines 128 b through the conductive layer CL, thereby further reducing the resistance. Because the conductive layer CL is located below thepartition wall 304, when the conductive layer CL is capacitively coupled to thepixel electrode 118, such that theorganic layer 120 adjacent to the conductive layer CL generates light, thepartition wall 304 may be used to shield the leaked light. -
FIG. 16 schematically illustrates a cross-sectional view of a light emitting device according to a variant embodiment of the ninth embodiment of the present disclosure. As shown inFIG. 16 , the difference between the light emittingdevice 15 of the present embodiment and the light emitting device of the ninth embodiment shown inFIG. 15 is that theauxiliary electrode 1562 is disposed on thepartition wall 304 in the present variant embodiment. In addition, thelight emitting device 15 may further include at least oneconnection line 1564 disposed above thepartition wall 304 to electrically connect theauxiliary electrode 1562 and thecommon electrode 122 in the peripheral region (not show) of thelight emitting device 15. The peripheral region may for example be the region for disposing the peripheral circuit, but not limited thereto. In order to clearly show theconnection line 1564, the upper part ofFIG. 16 shows an enlarged schematic view of theconnection line 1564, theauxiliary electrode 1562, and thepartition wall 304, and the coordinate or orientation of the upper part may be different from the coordinate or orientation of the lower part. For example, theconnection line 1564 may be disposed on thepartition wall 304 along the second direction D2 and extend onto theauxiliary electrode 1562 but not cross the opening OP11, the opening OP12 and the opening OP13. Theconnection line 1564 may for example include metal conductive materials such as aluminum, copper or gold, but not limited thereto. In some embodiments, theconnection line 1564 may extend to be located between theauxiliary electrode 1562 and thepartition wall 304. In some embodiments, the material of theconnection line 1564 may include aluminum, copper, silver, gold, or other suitable conductive materials. -
FIG. 17 schematically illustrates a method of manufacturing the partition wall and the layers on the substrate according to different variant embodiments of a tenth embodiment of the present disclosure. As shown in the portion P6 ofFIG. 17 , in the method of one of the variant embodiments of the present embodiment, after thelight conversion element 106 is formed by solidification, a grinding process may be performed to remove the portion of thepartition wall 104 which is excessive high. Accordingly, the thickness H1′ of thepartition wall 104 may be reduced to shorten the path of the light. After that, the light blocking layer, the reflective layer, the protection layer, the planarization layer and/or the encapsulation layer (not shown) maybe formed on thepartition wall 104 in sequence. - As shown in the portion P7 of
FIG. 17 , in the method of another one variant embodiment of the present embodiment, after thelight conversion element 106 is formed, the opening OP of thepartition wall 104 may be filled with afilling layer 1666, and thefilling layer 1666 may cover thepartition wall 104, such that the surface may be flattened. Thefilling layer 1666 may be formed by silicon nano coating, and thus, the opening OP may be fully filled. Through this method, thelight conversion element 106 may be prevented from being damaged by water and gas during the grinding and cleaning process. - As shown in the portion P8 of
FIG. 17 , in the method of yet another variant embodiment of the present embodiment, after thelight conversion element 106 is formed, afilling layer 1668 may be filled into the opening OP of thepartition wall 104. Then, aplanarization 1670 may be formed on thepartition wall 104 and thefilling layer 1668, so as to flatten the surface. Because thefilling layer 1668 of the present variant embodiment is formed by inkjet printing process, the opening OP may be filled well. Through this method, because thefilling layer 1668 may be filled into the opening OP effectively, the air produced between thelight conversion element 106 or thelight scattering layer 116 and thefilling layer 1668 may be reduced, thereby avoiding mismatch between the refractive index of air and the refractive index of thefilling layer 1668. - In summary, the overflow of the light conversion ink in the light emitting device of the present disclosure may be reduced by increasing the thickness of the partition wall, or the problem of color mixing in the same opening may also be solved. Furthermore, in the method of manufacturing the light emitting device of the present disclosure, by repeating the steps of coating, baking, patterning and baking, the partition wall with enough thickness and uniform thickness may be formed.
- Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the disclosure. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims (14)
1. A light emitting device, comprising:
a substrate;
a plurality of light emitting elements disposed on the substrate;
a partition wall disposed on the substrate, the partition wall defining a plurality of cavities, and one of the plurality of cavities corresponding to one of the plurality of light emitting elements;
a light conversion element disposed in the one of the plurality of cavities;
an encapsulation layer disposed on the plurality of light emitting elements;
an intermediate layer disposed between the light conversion element and the one of the plurality of light emitting elements; and
a protection layer disposed between the intermediate layer and the plurality of light emitting elements.
2. The light emitting device according to claim 1 , wherein at least a portion of the partition wall in a cross-section view is arc-shaped.
3. The light emitting device according to claim 1 , further comprising a light blocking layer disposed on the partition wall.
4. The light emitting device according to claim 1 , wherein the partition wall has a top surface higher than a top surface of the light conversion element in at least a part of the one of the plurality of cavities.
5. The light emitting device according to claim 1 , wherein the partition wall has a thickness ranging from 4 micrometers to 30 micrometers in at least a part of the one of the plurality of cavities.
6. The light emitting device of claim 1 , wherein the partition wall is a multi-layer structure.
7. The light emitting device of claim 6 , wherein the multi-layer structure comprises a first sub-layer and a second sub-layer on the first sub-layer.
8. The light emitting device according to claim 7 , wherein a thickness of the first sub-layer is less than a thickness of the second sub-layer.
9. The light emitting device of claim 7 , wherein the first sub-layer and the second sub-layer are formed in different steps.
10. The light emitting device according to claim 7 , wherein the first sub-layer comprises a first sidewall, the second sub-layer comprises a second sidewall, and a taper angle of the first sidewall relative to the substrate is less than a taper angle of the second sidewall relative to the substrate.
11. The light emitting device of claim 7 , wherein a concentration of fluorine in the first sub-layer is different from a concentration of fluorine in the second sub-layer.
12. The light emitting device of claim 7 , wherein a bottom width of the first sub-layer is greater than a bottom width of the second sub-layer.
13. The light emitting device of claim 7 , wherein the light conversion element comprises a phosphor material, a fluorescent material, or quantum dot particles.
14. The light emitting device of claim 1 , further comprising a pixel defining layer comprising a plurality of first openings, wherein the partition wall comprising a plurality of second openings, and one of the plurality of first openings corresponds to one of the plurality of second openings.
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US16/916,165 US11637217B2 (en) | 2019-07-23 | 2020-06-30 | Method of manufacturing light emitting device |
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TWI719775B (en) * | 2019-12-25 | 2021-02-21 | 錼創顯示科技股份有限公司 | Display device |
KR20210133371A (en) * | 2020-04-28 | 2021-11-08 | 삼성디스플레이 주식회사 | Display apparatus |
KR20220008995A (en) * | 2020-07-14 | 2022-01-24 | 삼성디스플레이 주식회사 | Display panel |
CN114256297A (en) * | 2020-09-25 | 2022-03-29 | 京东方科技集团股份有限公司 | Display panel and display device |
CN112133734B (en) * | 2020-09-29 | 2022-08-30 | 湖北长江新型显示产业创新中心有限公司 | Display panel and display device |
CN112952025A (en) * | 2021-03-31 | 2021-06-11 | 京东方科技集团股份有限公司 | Display substrate and display device |
KR20230016925A (en) * | 2021-07-27 | 2023-02-03 | 삼성전자주식회사 | Display panel and electronic device |
KR20230063964A (en) * | 2021-11-01 | 2023-05-10 | 삼성디스플레이 주식회사 | Display device and method for manufacturing the same |
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US11637217B2 (en) | 2023-04-25 |
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US20210028327A1 (en) | 2021-01-28 |
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