US20230212781A1 - Apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in cvd systems and methods of forming single crystal piezoelectric layers using the same - Google Patents
Apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in cvd systems and methods of forming single crystal piezoelectric layers using the same Download PDFInfo
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- 239000002243 precursor Substances 0.000 title claims abstract description 141
- 238000000034 method Methods 0.000 title claims description 20
- 239000013078 crystal Substances 0.000 title description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 31
- 239000012159 carrier gas Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 150000004678 hydrides Chemical class 0.000 claims description 5
- 230000001276 controlling effect Effects 0.000 claims 2
- 230000001105 regulatory effect Effects 0.000 claims 2
- 238000011144 upstream manufacturing Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 16
- 238000004891 communication Methods 0.000 description 14
- 238000004590 computer program Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000013500 data storage Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000013212 metal-organic material Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 239000012712 low-vapor-pressure precursor Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- -1 such as Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
Abstract
An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber. A central injector column can penetrate through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow metalorganic precursors into the reactor chamber in the closed position. A heated metalorganic precursor line can be coupled to the central injector column and configured to heat a low vapor pressure metalorganic precursor vapor contained in the heated metalorganic precursor line upstream of the central injector column to a temperature range between about 70° C. and 200° C.
Description
- This application is a divisional of U.S. Pat. Application No. 16/784,843 entitled APPARATUS INCLUDING HORIZONTAL FLOW REACTOR WITH A CENTRAL INJECTOR COLUMN HAVING SEPARATE CONDUITS FOR LOW-VAPOR PRESSURE METALORGANIC PRECURSORS AND OTHER PRECURSORS FOR FORMATION OF PIEZOELECTRIC LAYERS ON WAFERS; filed Feb. 7, 2020, the contents of which are incorporated by reference in its entirety.
- The present invention relates generally to electronic devices. More particularly, the present invention provides techniques related to a method of manufacture and a structure for bulk acoustic wave resonator devices, single crystal bulk acoustic wave resonator devices, single crystal filter and resonator devices, and the like. Merely by way of example, the invention has been applied to a single crystal resonator device for a communication device, mobile device, computing device, among others.
- Wireless data communications can utilize RF filters operating at frequencies around 5 GHz and higher. It is known to use Bulk acoustic Wave Resonators (BAWR) incorporating polycrystalline piezoelectric thin films for some applications. While some polycrystalline based piezoelectric thin film BAWRs may be adequate for filters operating at frequencies from about 1 to 3 GHz, applications at frequencies around 5 GHz and above may present obstacles due to the reduced crystallinity associated with such thin poly-based films.
- Embodiments according to the invention can provide an apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in CVD systems and methods of forming single crystal piezoelectric layers using the same. Pursuant to these embodiments, an apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber. A central injector column can penetrate through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow metalorganic precursors into the reactor chamber in the closed position. A heated metalorganic precursor line can be coupled to the central injector column and configured to heat a low vapor pressure metalorganic precursor vapor contained in the heated metalorganic precursor line upstream of the central injector column to a temperature range between about 70° C. and 200° C. A processor circuit can be operatively coupled to the heated metalorganic precursor line and configured to maintain a temperature of the low vapor pressure metalorganic precursor vapor within the temperature range.
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FIG. 1 is a schematic representation of a CVD system including a horizontal flow CVD reactor supplied with a heated low vapor pressure MO precursor vapor routed to the CVD reactor via a heated line that is thermally isolated from other precursors delivered to the CVD reactor in some embodiments according to the invention. -
FIG. 2 is a schematic representation of a CVD system including a horizontal flow CVD reactor supplied with a heated low vapor pressure MO precursor vapor routed to the CVD reactor via a heated line that is thermally isolated from other precursors delivered to the CVD reactor in some embodiments according to the invention. -
FIG. 3 is a schematic representation of a CVD system including a horizontal flow CVD reactor supplied with a heated low vapor pressure MO precursor vapor routed to the CVD reactor via a heated line that is thermally isolated from other precursors delivered to the CVD reactor in some embodiments according to the invention. -
FIG. 4 is a schematic representation of a planetary wafer transport that rotates in the horizontal flow CVD reactor during laminar flow of the low vapor pressure MO precursor vapor over the wafers and a plurality of wafer stations thereon that rotate on the planetary wafer transport in some embodiments according to the invention. -
FIG. 5 is a schematic illustration of a high temperature pressure controller in-line with the heated low vapor pressure MO precursor line downstream from the heated low vapor pressure MO precursor source vessel in some embodiments according to the invention. -
FIG. 6 is a schematic illustration of a high temperature mass flow controller in-line with the heated low vapor pressure MO precursor line downstream from the heated low vapor pressure MO precursor source vessel in some embodiments according to the invention. -
FIG. 7 illustrates an example of a computing system that may be used to implement embodiments according to the invention. -
FIG. 8 illustrates an example of a multi-core processor unit that may be used to implement embodiments according to the invention. - According to the present invention, techniques generally related to electronic devices are provided. More particularly, the present invention provides techniques related to a method of manufacture and structure for, for example, bulk acoustic wave resonator devices, single crystal resonator devices, single crystal filter and resonator devices, and the like. These types of devices have been applied to a single crystal resonator device for communication devices, mobile devices, and computing devices, among others.
- Embodiments according to the invention can utilize low vapor pressure metalorganic (MO) precursors for the CVD formation of single crystal piezoelectric layers that incorporate dopants (such as Scandium Sc) and Yttrium Y) at relatively high concentrations by heating the low vapor pressure MO precursor to a relatively high temperature (such as greater than 150° C.). For example, in some embodiments according to the invention, a CVD system can heat a low vapor pressure MO precursor, such as, tris(cyclopentadienyl)Sc (i.e., (Cp)3Sc)) and (MeCp)3Sc or Cp3Y and (MeCp)3Y, to at least 150° C. Other low vapor pressure MO precursors may also be used in embodiments according to the present invention.
- In some embodiments, the source vessel that holds the source of the low vapor pressure metalorganic (MO) precursors can be heated to at least 150° C. as well as the lines that deliver the low vapor pressure MO precursor vapor to the CVD reactor chamber. In some embodiments, the CVD reactor is a horizontal flow reactor that can generate a laminar flow of the low vapor pressure MO precursor vapor over the wafers in the reactor. In some embodiments according to the invention, the horizontal flow reactor can include a planetary type apparatus that rotates during the deposition process and that rotates the wafer stations that hold each of the wafers. In some embodiments according to the invention, the low vapor pressure MO precursor can be any metal organic material having a vapor pressure of 4.0 Pa or less at room temperature. In some embodiments according to the invention, the low vapor pressure MO precursor can be any metal organic material having a vapor pressure of between about 4.0 Pa to about 0.004 Pa at room temperature.
- In still further embodiments according to the invention, the heated line that conducts the low vapor pressure MO precursor vapor to the CVD reactor chamber is thermally isolated from the other MO precursors and hydrides. For example, in some embodiments, the heated line that conducts the low vapor pressure MO precursor vapor to the CVD reactor chamber is provided to the central injector column via a different route than that used to provide the other precursors, such as through a flexible heated line that is connected to a portion of the CVD reactor that moves. In particular, the other precursors may be provided to the central injector column through a lower portion of the CVD reactor that remains stationary when CVD reactor is opened by, for example, lifting the upper portion of the CVD reactor to open the CVD reactor chamber. Accordingly, when the CVD reactor chamber is in the open position, the upper and lower portions of the CVD reactor separate from one another to expose, for example, the planetary arrangements described herein.
- As appreciated by the present inventors, providing the low vapor pressure MO precursor vapor to the central injector column by a different path than the other precursors, can allow the low vapor pressure MO precursor vapor to be heated to the relatively high temperature without adversely affecting (e.g., heating) the other precursors above room temperature, for example. Accordingly, while the other precursors may be provided via other precursor lines routed though the lower portion that are configured to mate/unmate when the CVD reactor is closed/opened, the heated low vapor pressure MO precursor line to the central injector column can remain a unitary flexible piece that allows the upper portion to move when opened/closed yet still be thermally isolated from the other precursors/precursor lines.
- In some embodiments, the molar flow of the low vapor pressure MO precursor vapor is provided by a high temperature mass flow controller (MFC) that is downstream of the heated low vapor pressure MO precursor source vessel. In some embodiments according to the invention, an MFC is located upstream of the heated low vapor pressure MO precursor source vessel and a high temperature pressure controller is located downstream of the heated low vapor pressure MO precursor source vessel in-line with the line that conducts the low vapor pressure MO precursor vapor to the CVD reactor chamber. Accordingly, in embodiments where a device, such as the high temperature MFC or the high temperature pressure controller, is located in-line with the line that conducts the low vapor pressure MO precursor vapor to the CVD reactor chamber downstream of the heated low vapor pressure MO precursor source vessel, the respective device is configured to operate at relatively high temperatures, such as greater than 150 degrees Centigrade.
- It will be understood that embodiments according to the invention can operate under the control of a processor circuit so that the heating and delivery of the low vapor MO precursor vapor is provided at the temperatures, pressures, amounts and other operational parameters needed to form single crystal piezoelectric layers as described herein. Although the operations described herein may refer to the operations being carried out by a processor circuit it will be understood that in some embodiments separate operations (or separate portions of the same operation) may be carried out, entirely or partially by a plurality of processor circuits and/or processing systems that are operatively coupled together to carry of the methods of forming that are described herein, as shown for example in
FIGS. 7 and 8 . -
FIG. 1 is a schematic representation of aCVD system 300 including a horizontalflow CVD reactor 305 supplied with a heated low vapor pressureMO precursor vapor 310 routed to the CVDreactor 305 via aheated line 315 that is thermally isolated fromother precursors 320 delivered to the CVDreactor 305 in some embodiments according to the invention. As shown inFIG. 1 , theCVD reactor 305 includes anupper portion 350 and alower portion 355 that are moveably coupled together. In operation, theupper portion 350 can separate from thelower portion 355 to expose a planetary wafer transport system so that wafers may be loaded into a plurality of wafer stations. - A
central injector column 345 penetrates theupper portion 350 of thereactor 305 and is coupled to separate lines configure to carry different precursors. In particular, thecentral injector column 345 is coupled to a heated low vapor pressureMO precursor line 315 that carries a low vapor pressureMO precursor vapor 310. The heated low vapor pressureMO precursor line 315 is heated by aheater 330 that operates under the control of theprocessor circuit 101 to maintain the temperature of theline 315 so that theprecursor vapor 310 is provided to the reactor chamber at a temperature in a range between about 120 degrees Centigrade to about 200 degrees Centigrade. In some embodiments, theprocessor circuit 101 controls theheated line 315 so that theprecursor vapor 310 is provided to the reactor chamber at a temperature in a range between more than 150 degrees Centigrade to about 200 degrees Centigrade. - As further shown in
FIG. 1 ,other precursors 320 can also be provided to thecentral injector column 345 via apath 360 that is separated from theline 315. In some embodiments, the other precursors can include other metal organic precursors as wells as hydrides. It will be understood that thepath 360 and theline 315 are located to be thermally isolated from one another so that theheated precursor vapor 310 can be delivered to thecentral injector column 345 without substantially affecting the temperature of theother precursors 320. In other words, in some embodiments according to the invention, theheated line 315 is located so that thevapor 310 can be heated without substantially heating theother precursors 320. - As appreciated by the present inventors, in some conventional systems the low vapor pressure MO precursor vapor may be delivered to the injector in close proximity to other precursors. Therefore, if steps are not taken to thermally isolate a heated low vapor pressure metal organic precursor vapor from the other precursors delivered to the central injector column, the other precursors may be adversely effected which may cause the other precursors to react before being delivered to the reactor chamber. Accordingly, the
heated line 315 can be thermally isolated form the other precursors by, for example, routing the respective lines to be spaced apart from one another. In some embodiments, theheated precursor line 315 is spaced apart from thelines 360 that carry the other precursors to avoid inadvertently heating the other precursors with theheated lines 315. - According to
FIG. 1 , theheated line 315 is connected to thecentral column injector 345 without passing through thelower portion 355, which may remain fixed when theupper portion 350 is raised to open theCVD reactor 305. Instead, in some embodiments theheated line 315 is a flexible line that is coupled tocentral injector column 345 on theupper portion 350. Accordingly, when the CVDreactor 305 is opened, theupper portion 350 is raised whereas thelower portion 355 remains fixed. The flexibleheated line 315, however, allows theCVD reactor 305 to be opened while the flexibleheated line 315 remains coupled to thecentral injector column 345. In contrast, thelines 360 which carry theother precursors 320 may be routed through both thelower portion 355 and the upper portion. Accordingly, theother lines 360 can include in-line joints that are configured to un-mate when theCVD reactor 305 is opened and to mate together again when theCVD reactor 305 is closed. The heatflexible line 315, however, remains a unitary structure when theCVD reactor 305 is opened or closed. - As further shown in
FIG. 1 , aheater 330 is thermally coupled to theheated line 315 and is controlled by theprocessor circuit 101 to maintain the temperature of the heated low vapor pressure metalorganic precursor vapor 310 within the desired temperature range via a feedback loop, as shown. Aheater 335 is also thermally coupled to a low vapor pressureprecursor source vessel 325, which can hold the material which generates the low vapor pressureMO precursor vapor 310. Theprocessor circuit 101 can also monitor the operation theheater 335 and adjust the temperature based on the feedback as described above. It will be understood that theheater 330 may include different segments that are each thermally coupled to theheated line 315, which can all be controlled by theprocessor circuit 101 as an integrated unit. It will be understood that the processor circuit can adjust the temperature of the low vapor pressureMO precursor vapor 310 to be greater than a target value to allow for heat loss during the transfer so that the vapor is delivered to the reactor chamber in the desired temperature range. -
FIG. 2 is a schematic representation of aCVD system 301 including a horizontalflow CVD reactor 305 supplied with the heated low vapor pressureMO precursor vapor 310 routed to theCVD reactor 305 via theheated line 315 and an in-line high temperaturemass flow controller 370, thermally isolated fromother precursors 320 delivered to theCVD reactor 305 in some embodiments according to the invention. According toFIG. 2 , thereactor 305 is shown in the open position such that theupper portion 350 is separated from thelower portion 355 to expose the wafer transport and the wafer stations. As further shown inFIG. 2 , theheated line 315 remains connected to thecentral injector column 345 when theCVD reactor 305 is in the open position. Accordingly, the coupling between the low vapor pressure metal organicprecursor source vessel 325 to the central injector column 245 remains intact even when theCVD reactor 305 is in the open position. - Still further,
FIG. 2 shows a high temperaturemass flow controller 370 in-line with the heated low vapor pressure metalorganic precursor line 315 between thecentral injector column 345 and thevessel 325. The high temperature mass flow controller (MFC) 370 operates under control of theprocessor circuit 101 to detect and maintain the flow of thevapor 310 from thevessel 325 into thecentral injector column 345 during operation of theCVD reactor 305. The high temperaturemass flow controller 370 is configured to operate at a temperature that is in the range in which thevapor 315 is heated. For example, in someembodiments processor circuit 101 controls the operation of theMFC 370 so that the desired molar amount of the low vapor pressureMO precursor vapor 310 is provided from thevessel 325 to theCVD reactor 305 at the desired temperature. Thesystem 301 also includes apressure controller 375 that operates under the control of theprocessor circuit 101 to provide a carrier gas from acarrier gas source 340 into thevessel 325. -
FIG. 3 is a schematic representation of aCVD system 302 including a horizontalflow CVD reactor 305 supplied with a heated low vapor pressureMO precursor vapor 310 routed to theCVD reactor 305 via a heated line that 315 and an in-line hightemperature pressure controller 380, thermally isolated fromother precursors 320 delivered to theCVD reactor 305 in some embodiments according to the invention. According toFIG. 3 theCVD reactor 305 is shown in the open position such that theupper portion 350 is separated from thelower portion 355 to expose the wafer transport and the wafer stations. As further shown inFIG. 2 , theheated line 315 remains connected to thecentral injector column 345 when theCVD reactor 305 is in the open position. Accordingly, the coupling between the low vapor pressure metal organicprecursor source vessel 325 to the central injector column 245 remains intact even when theCVD reactor 305 is in the open position. - Still further,
FIG. 3 shows a hightemperature pressure controller 380 in-line with the heated low vapor pressure metalorganic precursor line 315 between thecentral injector column 345 and thevessel 325. The hightemperature pressure controller 380 operates under control of theprocessor circuit 101 to detect and maintain the pressure of thevapor 310 from thevessel 325 into thecentral injector column 345 during operation of theCVD reactor 305 at the desired temperature. The hightemperature pressure controller 380 is configured to operate at a temperature that is in the range in which thevapor 315 is heated. For example, in some embodiments theprocessor circuit 101 controls the operation of the hightemperature pressure controller 380 so that the desired molar amount of the low vapor pressureMO precursor vapor 310 is provided from thevessel 325 to theCVD reactor 305 at the desired temperature and pressure. Thesystem 302 also includes amass flow converter 385 that operates under the control of theprocessor circuit 101 to provide the proper amount of the carrier gas from thecarrier gas source 340 into thevessel 325. -
FIG. 4 is a schematic representation of aplanetary wafer transport 410 that rotates in the horizontalflow CVD reactor 305 duringlaminar flow 421 of the low vapor pressureMO precursor vapor 310 over the wafers and a plurality ofwafer stations 420 thereon that rotate on the planetary wafer transport in some embodiments according to the invention. As shown inFIG. 4 , theCVD reactor 305 includes aplanetary wafer transport 410 on thelower portion 355 of the reactor, which rotates in a first direction. Theplanetary wafer transport 410 includes a plurality ofwafer stations 420, each of which can hold a wafer on which the single crystal piezoelectric layers can be formed in some embodiments according to the invention. Each of the plurality ofwafer stations 420 can rotate in a second direction that is opposite to the first direction. - The
central injector column 345 penetrates theupper portion 350 to provide a laminar flow of precursor across the surface of the wafers as theplanetary wafer transport 410 and thewafer stations 420 rotate in their respective directions. The laminar flow is horizontal across the surfaces of the wafers as shown. In some embodiments according to the invention, the heated low vapor pressureMO precursor vapor 310 can be introduced to thecentral injector column 345 so as to not to react with the non-heated MO precursors or the hydrides before reaching the reactor chamber. In some embodiments according to the invention, the conduits for the heated low vapor pressureMO precursor vapor 310 and the non-heated MO precursors and the hydrides are spaced apart from one another in thecentral injector column 345 so to be thermally insulated from one another. -
FIG. 5 is a schematic illustration of the hightemperature pressure controller 380 in-line with the heated low vapor pressureMO precursor line 315 downstream from the heated low vapor pressure MOprecursor source vessel 325 in some embodiments according to the invention. As shown inFIG. 5 , the hightemperature pressure controller 380 can include apressure valve 435 in line with the heated low vapor pressureMO precursor line 315 and apressure transducer 430, both of which can operate in the temperature range to which thevapor 310 is to be heated, such as more than 150 degrees Centigrade to about 200 degrees Centigrade. Further, the hightemperature pressure controller 380 can includelocal electronics 440 operatively couple to thepressure value 435 and configured to adjust thepressure valve 435 so as to change the pressure in theheated line 315. It will also be understood that the hightemperature pressure controller 380 can include theprocessor circuit 101, which can be configured to carry out the operations described herein in some embodiments. -
FIG. 6 is a schematic illustration of a high temperaturemass flow controller 370 in-line with the heated low vapor pressureMO precursor line 315 downstream from the heated low vapor pressure MOprecursor source vessel 325 in some embodiments according to the invention. As shown inFIG. 6 , the high mass flow controller (MFC) 370 can include a anMFC 435 in line with the heated low vapor pressureMO precursor line 315 which can operate in the temperature range to which thevapor 310 is to be heated, such as more than 150 degrees Centigrade to about 200 degrees Centigrade. Further, thehigh temperature MFC 370 can includelocal electronics 455 operatively couple to thehigh temperature MFC 450 and configured to adjust the molar amount of thevapor 310 in theheated line 315. It will also be understood that thehigh temperature MFC 370 can include theprocessor circuit 101, which can be configured to carry out the operations described herein in some embodiments. - The execution of various embodiments of the disclosed technology may be implemented using computer-executable software instructions executed by one or more programmable computing devices. Because these embodiments of the disclosed technology may be implemented using software instructions, the components and operation of a generic programmable computer system on which various embodiments of the disclosed technology may be employed will first be described. Further, because of the complexity of real-time nature of the methods and operations of the apparatus of embodiment according to the invention, as described herein, the processor circuit(s) or computing system described herein may be capable of concurrently running multiple processing threads.
-
FIG. 7 illustrates an example of a computing system that may be used to implement embodiments according to the invention including the components and operation of aprocessor circuit 101 having a host or master computer and one or more remote or servant computers. This operating environment is only one example of a suitable operating environment, however, and is not intended to suggest any limitation as to the scope of use or functionality of the disclosed technology. - In
FIG. 7 , theprocessor circuit 101 includes amaster computer 103. In the illustrated example, themaster computer 103 is a multi-processor computer that includes a plurality of input andoutput devices 105 and amemory 107. The input andoutput devices 105 may include any device for receiving input data from or providing output data to a user. The input devices may include, for example, a keyboard, microphone, scanner or pointing device for receiving input from a user. The output devices may then include a display monitor, speaker, printer or tactile feedback device. These devices and their connections are well known in the art, and thus will not be discussed at length here. - The
memory 107 may similarly be implemented using any combination of computer readable media that can be accessed by themaster computer 103. The computer readable media may include, for example, microcircuit memory devices such as read-write memory (RAM), read-only memory (ROM), electronically erasable and programmable read-only memory (EEPROM) or flash memory microcircuit devices, CD-ROM disks, digital video disks (DVD), or other optical storage devices. The computer readable media may also include magnetic cassettes, magnetic tapes, magnetic disks or other magnetic storage devices, punched media, holographic storage devices, or any other medium that can be used to store desired information. - As will be discussed in detail below, the
master computer 103 runs a software application for performing the operations according to various examples of the disclosed technology. Accordingly, thememory 107stores software instructions 109A that, when executed, will implement a software application for performing one or more operations. Thememory 107 also stores data 109B to be used with the software application. In the illustrated embodiment, the data 109B contains process data that the software application uses to perform the operations, at least some of which may be parallel. - The
master computer 103 also includes a plurality ofprocessor units 111 and aninterface device 113. Theprocessor units 111 may be any type of processor device that can be programmed to execute thesoftware instructions 109A,but will conventionally be a microprocessor device. For example, one or more of theprocessor units 111 may be a commercially generic programmable microprocessor, such as Intel. Pentium. or Xeon microprocessors, Advanced Micro Devices Athlon.TM. microprocessors or Motorola 68 K/Coldfire. microprocessors. Alternately or additionally, one or more of theprocessor units 111 may be a custom-manufactured processor, such as a microprocessor designed to optimally perform specific types of mathematical operations. Theinterface device 113, theprocessor units 111, thememory 107 and the input/output devices 105 are connected together by abus 115. - With some implementations of the disclosed technology, the
master computing device 103 may employ one ormore processing units 111 having more than one processor core.FIG. 8 illustrates an example of amulti-core processor unit 111 that may be employed with various embodiments of the disclosed technology. As shown inFIG. 8 , theprocessor unit 111 includes a plurality ofprocessor cores 201. Eachprocessor core 201 includes acomputing engine 203 and amemory cache 205. As known to those of ordinary skill in the art, a computing engine contains logic devices for performing various computing functions, such as fetching software instructions and then performing the actions specified in the fetched instructions. These actions may include, for example, adding, subtracting, multiplying, and comparing numbers, performing logical operations such as AND, OR, NOR and XOR, and retrieving data. Eachcomputing engine 203 may then use itscorresponding memory cache 205 to quickly store and retrieve data and/or instructions for execution. - Each
processor core 201 is connected to aninterconnect 207. The particular construction of theinterconnect 207 may vary depending upon the architecture of theprocessor unit 111. With someprocessor cores 201, such as the Cell microprocessor created by Sony Corporation, Toshiba Corporation and IBM Corporation, theinterconnect 207 may be implemented as an interconnect bus. Withother processor units 111, however, such as the Opteron.TM. and Athlon.TM. dual-core processors available from Advanced Micro Devices of Sunnyvale, Calif., theinterconnect 207 may be implemented as a system request interface device. In any case, theprocessor cores 201 communicate through theinterconnect 207 with an input/output interface 209 and amemory controller 210. The input/output interface 209 provides a communication interface between theprocessor unit 111 and thebus 115. Similarly, thememory controller 210 controls the exchange of information between theprocessor unit 111 and thesystem memory 107. With some implementations of the disclosed technology, theprocessor units 111 may include additional components, such as a high-level cache memory accessible shared by theprocessor cores 201. - While
FIG. 8 shows one illustration of aprocessor unit 111 that may be employed by some embodiments of the disclosed technology, it should be appreciated that this illustration is representative only, and is not intended to be limiting. Also, with some implementations, amulti-core processor unit 111 can be used in lieu of multiple,separate processor units 111. For example, rather than employing sixseparate processor units 111, an alternate implementation of the disclosed technology may employ asingle processor unit 111 having six cores, two multi-core processor units each having three cores, amulti-core processor unit 111 with four cores together with two separate single-core processor units 111, etc. - Returning now to
FIG. 7 , theinterface device 113 allows themaster computer 103 to communicate with theservant computers interface device 113 translates data and control signals from themaster computer 103 and each of the servant computers 117 into network messages according to one or more communication protocols, such as the transmission control protocol (TCP), the user datagram protocol (UDP), and the Internet protocol (IP). These and other conventional communication protocols are well known in the art, and thus will not be discussed here in more detail. - Each servant computer 117 may include a
memory 119, aprocessor unit 121, aninterface device 123, and, optionally, one more input/output devices 125 connected together by asystem bus 127. As with themaster computer 103, the optional input/output devices 125 for the servant computers 117 may include any conventional input or output devices, such as keyboards, pointing devices, microphones, display monitors, speakers, and printers. Similarly, theprocessor units 121 may be any type of conventional or custom-manufactured programmable processor device. For example, one or more of theprocessor units 121 may be commercially generic programmable microprocessors, such as Intel.RTM. Pentium.RTM. or Xeon.TM. microprocessors, Advanced Micro Devices Athlon.TM. microprocessors or Motorola 68 K/Coldfire.RTM. microprocessors. Alternately, one or more of theprocessor units 121 may be custom-manufactured processors, such as microprocessors designed to optimally perform specific types of mathematical operations. Still further, one or more of theprocessor units 121 may have more than one core, as described with reference toFIG. 2 above. For example, with some implementations of the disclosed technology, one or more of theprocessor units 121 may be a Cell processor. Thememory 119 then may be implemented using any combination of the computer readable media discussed above. Like theinterface device 113, theinterface devices 123 allow the servant computers 117 to communicate with themaster computer 103 over the communication interface. - In the illustrated example, the
master computer 103 is a multi-processor unit computer withmultiple processor units 111, while each servant computer 117 has asingle processor unit 121. It should be noted, however, that alternate implementations of the disclosed technology may employ a master computer havingsingle processor unit 111. Further, one or more of the servant computers 117 may havemultiple processor units 121, depending upon their intended use, as previously discussed. Also, while only asingle interface device master computer 103 and the servant computers, it should be noted that, with alternate embodiments of the disclosed technology, either thecomputer 103, one or more of the servant computers 117, or some combination of both may use two or moredifferent interface devices - With various examples of the disclosed technology, the
master computer 103 may be connected to one or more external data storage devices. These external data storage devices may be implemented using any combination of computer readable media that can be accessed by themaster computer 103. The computer readable media may include, for example, microcircuit memory devices such as read-write memory (RAM), read-only memory (ROM), electronically erasable and programmable read-only memory (EEPROM) or flash memory microcircuit devices, CD-ROM disks, digital video disks (DVD), or other optical storage devices. The computer readable media may also include magnetic cassettes, magnetic tapes, magnetic disks or other magnetic storage devices, punched media, holographic storage devices, or any other medium that can be used to store desired information. According to some implementations of the disclosed technology, one or more of the servant computers 117 may alternately or additionally be connected to one or more external data storage devices. Typically, these external data storage devices will include data storage devices that also are connected to themaster computer 103, but they also may be different from any data storage devices accessible by themaster computer 103. - It also should be appreciated that the description of the
processor circuit 101 illustrated inFIG. 7 andFIG. 8 is provided as an example only, and it not intended to suggest any limitation as to the scope of use or functionality of alternate embodiments of the disclosed technology. - It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the various embodiments described herein. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
- The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting to other embodiments. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes” and/or “including”, “have” and/or “having” when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Elements described as being “to” perform functions, acts and/or operations may be configured to or other structured to do so.
- Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments described herein belong. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
- As will be appreciated by one of skill in the art, various embodiments described herein may be embodied as a method, data processing system, and/or computer program product. Furthermore, embodiments may take the form of a computer program product on a tangible computer readable storage medium having computer program code embodied in the medium that can be executed by a computer.
- Any combination of one or more computer readable media may be utilized. The computer readable media may be a computer readable signal medium or a computer readable storage medium. A computer readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. More specific examples (a non-exhaustive list) of the computer readable storage medium would include the following: a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the context of this document, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
- A computer readable signal medium may include a propagated data signal with computer readable program code embodied therein, for example, in baseband or as part of a carrier wave. Such a propagated signal may take any of a variety of forms, including, but not limited to, electro-magnetic, optical, or any suitable combination thereof. A computer readable signal medium may be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. Program code embodied on a computer readable signal medium may be transmitted using any appropriate medium, including but not limited to wireless, wired, optical fiber cable, RF, etc., or any suitable combination of the foregoing.
- Computer program code for carrying out operations for aspects of the present disclosure may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C#, VB.NET, Python or the like, conventional procedural programming languages, such as the “C” programming language, Visual Basic, Fortran 2003, Perl, COBOL 2002, PHP, ABAP, dynamic programming languages such as Python, Ruby and Groovy, or other programming languages, such as a programming language for a FPGA, Verilog, System Verilog, Hardware Description language (HDL), and VHDL, . The program code may execute entirely on the user’s computer, partly on the user’s computer, as a stand-alone software package, partly on the user’s computer and partly on a remote computer or entirely on the remote computer or server. In the latter scenario, the remote computer may be connected to the user’s computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet Service Provider) or in a cloud computer environment or offered as a service such as a Software as a Service (SaaS).
- Some embodiments are described herein with reference to flowchart illustrations and/or block diagrams of methods, systems and computer program products according to embodiments. It will be understood that each block of the flowchart illustrations and/or block diagrams, and combinations of blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create a mechanism for implementing the functions/acts specified in the flowchart and/or block diagram block or blocks.
- These computer program instructions may also be stored in a computer readable medium that when executed can direct a computer, other programmable data processing apparatus, or other devices to function in a particular manner, such that the instructions when stored in the computer readable medium produce an article of manufacture including instructions which when executed, cause a computer to implement the function/act specified in the flowchart and/or block diagram block or blocks. The computer program instructions may also be loaded onto a computer, other programmable instruction execution apparatus, or other devices to cause a series of operational steps to be performed on the computer, other programmable apparatuses or other devices to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide processes for implementing the functions/acts specified in the flowchart and/or block diagram block or blocks.
- It is to be understood that the functions/acts noted in the blocks may occur out of the order noted in the operational illustrations. For example, two blocks shown in succession may in fact be executed substantially concurrently or the blocks may sometimes be executed in the reverse order, depending upon the functionality/acts involved. Although some of the diagrams include arrows on communication paths to show a primary direction of communication, it is to be understood that communication may occur in the opposite direction to the depicted arrows.
- Many different embodiments have been disclosed herein, in connection with the above description and the drawings. It will be understood that it would be unduly repetitious and obfuscating to literally describe and illustrate every combination and subcombination of these embodiments. Accordingly, all embodiments can be combined in any way and/or combination, and the present specification, including the drawings, shall support claims to any such combination or subcombination.
Claims (13)
1. An apparatus for forming semiconductor films, the apparatus comprising:
a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber;
a central injector column that penetrates through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow a low vapor pressure metalorganic precursor vapor into the reactor chamber in the closed position;
an actively heated metalorganic precursor line coupled to the central injector column;
a heated metalorganic precursor source vessel coupled to the central injector column by the actively heated metalorganic precursor line;
a pressure controller between the heated metalorganic precursor source vessel and a carrier gas source;
a mass flow controller in-line with the actively heated metalorganic precursor line between the heated metalorganic precursor source vessel and the central injector column.
2. The apparatus of claim 1 wherein the actively heated metalorganic precursor line is thermally isolated from lines carrying a hydride and/or non-low vapor pressure metalorganic precursors to the central injector column.
3. The apparatus of claim 1 wherein the actively heated metalorganic precursor line is configured to heat the low vapor pressure metalorganic precursor vapor to a temperature range between about 100° C. and 200° C.
4. The apparatus of claim 1 wherein the actively heated metalorganic precursor line is configured to heat the low vapor pressure metalorganic precursor vapor to a temperature range between about 120° C. and 150° C.
5. The apparatus of claim 1 wherein the actively heated metalorganic precursor line is a coupled to an inlet in the central injector column without passing through the lower portion of the horizontal flow reactor.
6. The apparatus of claim 1 wherein the actively heated metalorganic precursor line is remains a unitary structure when the horizontal flow reactor is in the open position.
7. The apparatus of claim 1 wherein the actively heated metalorganic precursor line remains a unitary structure from a run/vent valve to an inlet in the central injector column when the horizontal flow reactor is in the open position.
8. The apparatus of claim 1 wherein the actively heated metalorganic precursor line includes at least one bellows expansion joint.
9. A method of forming a piezoelectric film, the method comprising:
heating a horizontal flow reactor chamber, the horizontal flow reactor chamber including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position; and
heating a low vapor pressure metalorganic precursor vapor conducted in a heated metalorganic precursor line to a temperature range between about 70° C. and 200° C., the heated metalorganic precursor line coupled to a central injector column that penetrates through the upper portion of the horizontal flow reactor chamber, to allow the low vapor pressure metalorganic precursor vapor into horizontal flow reactor chamber in the closed position.
10. The method of claim 9 further comprising:
actuating wafers held in a planetary wafer transport coupled to the lower portion of the horizontal flow reactor chamber; and
conducting the low vapor pressure metalorganic precursor vapor through a susceptor into horizontal flow reactor chamber to generate a horizontal laminar flow of the low vapor pressure metalorganic precursor vapor over the wafers.
11. The method of claim 10 further comprising:
heating a metalorganic precursor source vessel to generate the low vapor pressure metalorganic precursor vapor in the heated metalorganic precursor line to the temperature range.
12. The method of claim 11 further comprising:
controlling an amount of a carrier gas that flows to the metalorganic precursor source vessel from a carrier gas source using a mass flow controller; and
regulating a pressure in the heated metalorganic precursor line between the metalorganic precursor source vessel and the central injector column using a temperature pressure controller in-line with the heated metalorganic precursor line.
13. The method of claim 11 further comprising:
regulating a pressure of a carrier gas that flows to the metalorganic precursor source vessel from a carrier gas source using a pressure controller; and
controlling an amount of the low vapor pressure metalorganic precursor vapor in the heated metalorganic precursor line between the metalorganic precursor source vessel and the central injector column using a temperature mass flow controller in-line with the heated metalorganic precursor line.
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US18/181,146 US20230212781A1 (en) | 2020-02-07 | 2023-03-09 | Apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in cvd systems and methods of forming single crystal piezoelectric layers using the same |
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US16/784,843 US11618968B2 (en) | 2020-02-07 | 2020-02-07 | Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers |
US18/181,146 US20230212781A1 (en) | 2020-02-07 | 2023-03-09 | Apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in cvd systems and methods of forming single crystal piezoelectric layers using the same |
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US16/784,843 Division US11618968B2 (en) | 2020-02-07 | 2020-02-07 | Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers |
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Family
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US16/784,843 Active 2041-01-08 US11618968B2 (en) | 2020-02-07 | 2020-02-07 | Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers |
US18/181,146 Pending US20230212781A1 (en) | 2020-02-07 | 2023-03-09 | Apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in cvd systems and methods of forming single crystal piezoelectric layers using the same |
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Country Status (5)
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US (2) | US11618968B2 (en) |
KR (1) | KR20220139885A (en) |
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