US20220252923A1 - Electrooptical device - Google Patents
Electrooptical device Download PDFInfo
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- US20220252923A1 US20220252923A1 US17/729,038 US202217729038A US2022252923A1 US 20220252923 A1 US20220252923 A1 US 20220252923A1 US 202217729038 A US202217729038 A US 202217729038A US 2022252923 A1 US2022252923 A1 US 2022252923A1
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- substrate
- conductive layer
- electrooptical device
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13396—Spacers having different sizes
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/047—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using sets of wires, e.g. crossed wires
Definitions
- An embodiment of the present invention relates to an electrooptical device.
- a liquid crystal electrooptical device utilizing the electrooptical effect of liquid crystals and an organic electroluminescence electrooptical device using an organic electroluminescent (organic EL) element have been developed and commercialized as an electrooptical device used in electric appliances and electronic equipment.
- a cholesteric liquid crystal is normally used for an electrooptical device used as electronic memo pads.
- the electrooptical device has a configuration in which the electrooptical device is normally in alight transmission state, and becomes a light non-transmission state (reflective state) at the location where it is pressed.
- Japanese Unexamined Patent Publication No. 2001-228975 discloses a liquid crystal electrooptical device for detecting location information when upper and lower substrates are conducting through spherical particles when a liquid crystal electrooptical device is pressed.
- an electrooptical device includes a first substrate; a second substrate opposed to the first substrate; a plurality of spacers maintaining a distance between the first substrate and the second substrate; a pixel electrode provided on the first substrate; a conductive layer provided on the side of the first substrate in the pixel electrode and overlapping a part of the pixel electrode; a structure (protrusion) provided on the first substrate, the protrusion protruding toward the side of the second substrate, and being covered with the pixel electrode; a counter electrode provided on the second substrate and opposed to the pixel electrode; a first alignment film provided on the pixel electrode and having a first opening in a portion overlapping the protrusion; a second alignment film provided on the counter electrode and having a second opening in the portion overlapping the protrusion; and a liquid crystal layer provided between the first alignment film and the second alignment film, and a distance from the bottom surface to the top surface in the protrusion is smaller than a distance from the bottom surface to the top surface in the spacer
- FIG. 1 is a perspective view of an electrooptical device according to an embodiment of the present invention
- FIG. 2 is a top view showing a part of a display region according to an embodiment of the present invention.
- FIG. 3 is a cross-sectional view showing a part of a display region according to an embodiment of the present invention.
- FIG. 4 is a schematic diagram showing a circuit configuration of an electrooptical device according to an embodiment of the present invention.
- FIG. 5 is a cross-sectional view of a pressed display region when a part of electrooptical device according to an embodiment of the present invention is pressed;
- FIG. 6 is a schematic diagram showing a circuit configuration of an electrooptical device according to an embodiment of the present invention.
- FIG. 7 is a schematic diagram showing a circuit configuration of an electrooptical device according to an embodiment of the present invention.
- FIG. 8 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention.
- FIG. 9 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention.
- FIG. 10 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention.
- FIG. 11 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention.
- FIG. 12 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention.
- FIG. 13 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention.
- FIG. 14 is a cross-sectional view showing a part of a display region according to an embodiment of the present invention.
- FIG. 15 is a cross-sectional view showing a part of a display region according to an embodiment of the present invention.
- FIG. 16 is a cross-sectional view showing a part of a display region according to an embodiment of the present invention.
- FIG. 17 is a top view showing a part of a display region according to an embodiment of the present invention.
- FIG. 18 is a top view showing a part of a display region according to an embodiment of the present invention.
- FIG. 19 is a top view showing a part of a display region according to an embodiment of the present invention.
- FIG. 20 is a top view showing a part of a display region according to an embodiment of the present invention.
- FIG. 21 is a top view showing a part of a display region according to an embodiment of the present invention.
- FIG. 22 is a top view showing a part of a display region according to an embodiment of the present invention.
- FIG. 23 is a top view showing a part of a display region according to an embodiment of the present invention.
- FIG. 24 is a top view showing a part of a display region according to an embodiment of the present invention.
- FIG. 25 is a top view showing a part of a display region according to an embodiment of the present invention.
- FIG. 26 is a cross-sectional view showing a part of a display region according to an embodiment of the present invention.
- a new electrooptical device that becomes a light transmission state from a normally light non-transmission state when it is pressed is being developed as a method different from the conventional method.
- a display device also called a touch panel
- manufacturing the touch panel may require many transistors, many wirings, and many insulating layers. As a result, the manufacturing processes of electro-optical devices may increase.
- An embodiment according to the present invention provided below discloses an electrooptical device that is easy to manufacture and is capable of switching a display state.
- the terms “above” and “below” include not only the case of being positioned directly above or below one component, but also the case of interposing another component therebetween, unless otherwise specified.
- Electrode and “wiring” are used to dearly separate each function, both are a “conductive layer” and have similar meanings.
- FIG. 1 is a perspective view of an electrooptical device 10 according to an embodiment of the present invention.
- the electrooptical device 10 has a display region 101 having pixels, a power supply 103 , and a housing 105 that houses the display region 101 and the power supply 103 .
- the display region 101 is normally in the light non-transmission state. When pressed with a stylus 107 or fingertips, the display region 101 switches to the light transmission state in the pressed region. When the display region 101 is switched to the light transmission state, a display object 109 (paper or display device) arranged on the back side of the display region (a second surface 110 b side of a substrate 110 , which will be described later) is displayed.
- a display object 109 paper or display device arranged on the back side of the display region (a second surface 110 b side of a substrate 110 , which will be described later) is displayed.
- the power supply 103 applies a voltage to a conductive layer 120 and a counter electrode 180 , which will be described later, to change the orientation state of the liquid crystal.
- FIG. 2 shows a top view of a part 101 a of the display region 101 of FIG. 1 .
- the display region 101 has the conductive layer 120 , a spacer 130 , a columnar structure 135 (also referred to as a protrusion), and a pixel electrode 150 .
- the conductive layers 120 are arranged in a grid shape in a first direction D 1 and a second direction D 2 intersecting the first direction D 1 .
- the first direction D 1 and the second direction D 2 are orthogonal to each other.
- a region defined by the conductive layer 120 is defined as a pixel region Pix in the present embodiment.
- the pixel region Pix is substantially square, and the pixel region Pix is defined as one pixel.
- the spacer 130 is arranged in a grid shape in the first direction D 1 and the second direction D 2 similar to the conductive layers 120 .
- the spacer 130 is arranged at the corners of the respective pixel regions Pix. In this case, the spacer 130 is arranged overlapping the conductive layer 120 .
- the columnar structures 135 are arranged on a part of the pixel region Pix respectively. In this example, the columnar structure 135 is arranged at the center of the pixel region Pix. The columnar structure 135 is arranged overlapping the conductive layer 120 .
- the columnar structure 135 is not limited to a columnar shape.
- the columnar structure 135 may be a truncated cone shape, or may be hemispherical.
- the columnar structure 135 is positioned so that the distance between the pixel electrode 150 and the counter electrode 180 is close.
- the pixel electrode 150 is arranged in each pixel region Pix.
- an end portion 151 of the pixel electrode 150 is indicated by a solid line
- an end portion 121 of the conductive layer 120 is indicated by a dotted line.
- the pixel electrode 150 overlaps the conductive layer 120 in a part of the pixel region Pix.
- the pixel electrode 150 overlaps the conductive layer 120 at the periphery of the pixel region Pix (four sides 120 a in this example).
- a capacitive element 30 is formed in combination with an insulating layer 140 to be described later.
- FIG. 3 is a cross-sectional view between A 1 -A 2 of the display region 101 .
- the display region 101 includes the display object 109 , the substrate 110 , the insulating layer 140 , an alignment film 160 , an alignment film 170 , the counter electrode 180 , a substrate 190 , a liquid crystal layer 200 , a polarizer 210 , and a polarizer 220 as well as the conductive layer 120 , the spacer 130 , the columnar structure 135 , and the pixel electrode 150 .
- a portion where the conductive layer 120 , the insulating layer 140 , and the pixel electrode 150 overlap has a function as the capacitive element 30 .
- the pixel electrode 150 , the liquid crystal layer 200 , and the counter electrode 180 have a function as a display element (a liquid crystal element 50 ). Materials used in a known liquid crystal panel can be applied as a liquid crystal material located in the liquid crystal layer 200 .
- the substrate 110 and the substrate 190 both hold the display region 101 and have light transmittance.
- a glass substrate or an organic resin material is used for the substrate 110 and the substrate 190 .
- the substrate 110 and the substrate 190 may be formed of an insulating material on their surfaces.
- the display object 109 is used on the second surface 110 b side of the substrate 110 . Paper or a display device, or the like may be used as the display object 109 .
- a second surface 190 b of the substrate 190 becomes a display surface.
- the position where the display object 109 is arranged may be outside the second surface 190 b of the substrate 190 .
- the second surface 110 b of the substrate 110 becomes the display surface.
- the conductive layer 120 is provided on a first surface 110 a of the substrate 110 .
- the conductive layer 120 may be formed of a conductive material having a light-shielding property selected from tantalum, tungsten, titanium, molybdenum, aluminum, or the like.
- the conductive layer 120 may be a single-layer structure of the aforementioned conductive material or a stacked structure. In this example, a laminated film of molybdenum and aluminum is used as the conductive layer 120 .
- a base film made of an inorganic insulating film may be arranged between the substrate 110 and the conductive layer 120 . As described above, the spacer 130 , the columnar structure 135 , and the conductive layer 120 are arranged to overlap each other.
- the liquid crystal layer 200 is not arranged at a location where the spacer 130 is arranged.
- the alignment film 160 located on an upper surface of the spacer 130 is in direct contact with the alignment film 170 . Since the alignment film 170 is not arranged at a location where the columnar structure 135 is arranged, it is not possible to control the orientation of liquid crystal molecules in the liquid crystal layer 200 . Therefore, the conductive layer 120 arranged below the spacer 130 and the columnar structure 135 also has a function as a light-shielding film to prevent the display object 109 arranged on the second surface 110 b side of the substrate 110 from being unintentionally displayed. In this case, the conductive layer 120 is provided wider than the spacer 130 and the columnar structure 135 in a portion where the spacer 130 , the columnar structure 135 , and the conductive layer 120 overlap.
- the spacer 130 is provided on the conductive layer 120 .
- the spacer 130 maintains an interval between the substrate 110 and the substrate 190 to a predetermined thickness.
- An inorganic insulating material or an organic insulating material or a mixed material of an inorganic insulating material and an organic insulating material may be used as the spacer 130 .
- a polyimide resin is used for the spacer 130 .
- the columnar structure 135 is provided on the conductive layer 120 .
- the columnar structure 135 protrudes toward the substrate 190 .
- the columnar structure 135 is formed of the same material as the spacer 130 .
- a polyimide resin is used for the columnar structure 135 .
- a distance H 135 from a lower surface 135 b to an upper surface 135 a of the columnar structure 135 is preferably smaller than a distance H 130 from a lower surface 130 b to an upper surface 130 a of the spacer 130 .
- the insulating layer 140 is provided on the substrate 110 , the conductive layer 120 , the spacer 130 , and the columnar structure 135 .
- the insulating layer 140 can be formed of silicon oxide, silicon oxynitride, silicon nitride, or other high dielectric constant inorganic materials. In this case, a silicon nitride film is used for the insulating layer 140 .
- the pixel electrode 150 is provided on the insulating layer 140 .
- the pixel electrode 150 is provided so as to cover the side surface and the upper surface of the columnar structure 135 .
- a material having light transmittance is used for the pixel electrode 150 .
- indium tin oxide (ITO) is used for the pixel electrode 150 .
- the alignment film 160 is provided on the pixel electrode 150 .
- the alignment film 160 controls the orientation of the liquid crystal molecules in the liquid crystal layer 200 .
- An organic resin or the like is used for the alignment film 160 .
- an acrylic resin is used for the alignment film 160 .
- the alignment film 160 has an opening 160 a in a region R 160 overlapping the columnar structure 135 so as not to be arranged on the upper surface 135 a of the columnar structure 135 .
- the alignment film 170 controls the orientation of the liquid crystal molecules in the liquid crystal layer 200 , similar to the alignment film 160 .
- the alignment film 170 is formed of the same material as the alignment film 160 .
- the alignment film 170 has an opening 170 a in a region R 170 that overlaps the columnar structure 135 .
- a width D 170 a of the opening 170 a is wider than a width D 135 a of the upper surface 135 a of the columnar structure 135 (more specifically, the width of the upper surfaces of the insulating layer 140 and the pixel electrode 150 covering the upper surface 135 a of the columnar structure 135 ).
- the counter electrode 180 is provided opposite to the pixel electrode 150 .
- the counter electrode 180 has a function as a common electrode of the liquid crystal element 50 .
- the counter electrode 180 has light transmittance.
- the same material as the pixel electrode 150 is used for the counter electrode 180 .
- ITO is used for the counter electrode 180 .
- the liquid crystal layer 200 is between the alignment film 160 and the alignment film 170 .
- An orientation of the liquid crystal molecules in the liquid crystal layer 200 is controlled by the potential difference between the pixel electrode 150 and the counter electrode 180 .
- a nematic liquid crystal is used for the liquid crystal layer 200
- the liquid crystal element 50 is driven by a TN (Twist Nematic) method.
- FIG. 4 is a schematic diagram showing a circuit configuration of the liquid crystal element 50 of the electrooptical device 10 .
- a HIGH potential VGH is applied to the counter electrode 180 .
- 5V is applied to the counter electrode 180 .
- no potential is directly applied to the pixel electrode 150 , and the pixel electrode 150 has a floating structure.
- the potential of GND that is, 0V is applied to the conductive layer 120 .
- the pixel electrode 150 is capacitively coupled to the conductive layer 120 , and the pixel electrode 150 is charged with a potential VGL lower than the counter electrode 180 .
- the pixel electrode 150 is charged with the potential GND or a negative potential.
- This potential difference creates an electric field in the liquid crystal layer 200 , and the liquid crystal molecules in the liquid crystal layer 200 are oriented along the electric field. As a result, the display region 101 is changed to the light non-transmission state.
- the pixel electrode 150 , the conductive layer 120 , and the insulating layer 140 which is a dielectric form the capacitive element 30 .
- FIG. 5 is a cross-sectional view of the display region 101 when pressing a part of the display region 101 .
- pressing a part of the display region 101 causes the substrate 190 , the counter electrode 180 , and the alignment film 170 to bend.
- the opening 170 a is arranged in the alignment film 170 .
- a portion 150 a of the pixel electrode 150 covering the upper surface 135 a of the columnar structure 135 is electrically connected to the counter electrode 180 . If the pixel electrode 150 ( 150 a ) and the counter electrode 180 are electrically connected, the opening 160 a and the opening 170 a may not be provided.
- FIG. 6 is a schematic diagram showing a circuit configuration of the liquid crystal element 50 of the electrooptical device 10 when pressing a part of the display region 101 .
- the HIGH potential VGH applied to the counter electrode 180 is also applied to the pixel electrode 150 .
- a potential of 5V is applied to the pixel electrode 156 .
- the orientation state of the liquid crystal molecules changes from the orientation state in FIG. 3 .
- the orientation state is changed to the light transmission state in a part of the display region 101 , in other words, in a region where the pixel electrode 150 electrically connected to the counter electrode 180 is located.
- FIG. 7 is a schematic diagram showing a circuit configuration of the liquid crystal element 50 of the electrooptical device 10 after the pressing is released.
- a potential difference between the potential VGH (5V) stored in the pixel electrode 150 and the potential GND (0V) applied to the conductive layer 120 occurs in the capacitive element 30 .
- the leak current caused by an insulating resistance 122 of the capacitive element 30 flows gradually from the pixel electrode 150 to the conductive layer 120 .
- the potential of the pixel electrode 150 gradually decreases from 5V, and as a result, the potential of the pixel electrode 150 again becomes the potential VGL.
- the time until the liquid crystal is oriented again can be appropriately adjusted by a time constant calculated based on the insulating resistance of the capacitance value and dielectric (the insulating layer 140 ) in the capacitive element 30 including the conductive layer 120 , the insulating layer 140 , and the pixel electrode 150 .
- the conductive layer 120 is formed on a substrate 100 .
- a material having an insulating property and light transmittance is used for the substrate 100 for providing the display object 109 on the second surface 110 b side.
- the substrate 110 may be formed of an inorganic insulating material, an organic resin material, or a conductive material that has been subjected to an insulating treatment. More specifically, examples thereof include a glass substrate such as a quartz substrate, an alkali-free glass substrate, and a soda glass, an inorganic insulating substrate such as sapphire and alumina, and an acrylic resin, an epoxy resin, a polyimide resin, and a polyethylene terephthalate resin and the like are used for the substrate 110 . For example, when an organic resin substrate is used for the substrate 100 , a polyimide substrate may be used.
- the organic resin substrate can have a thickness of several micrometers to several tens of micrometers, As a result, a sheet display having flexibility can be realized.
- the base film of an inorganic insulating material may be formed on the substrate 100 .
- the base film is formed on the entire surface of the first surface 110 a.
- the conductive layer 120 may be formed of a material such as a metal element selected from tungsten, aluminum, chromium, copper, titanium, tantalum, molybdenum, nickel, cobalt, tungsten, indium, tin, and zinc, an alloy containing any of these metal elements as a component, or an alloy containing any of these metal elements in combination. Nitrogen, oxygen, hydrogen, or the like contained in the above materials may be used as the conductive layer 120 .
- the conductive layer 120 may be a single layer film or a stacked film.
- the conductive layer 120 is formed by a sputtering method, a CVD method, a plating method, and a printing method or the like.
- a molybdenum-aluminum stacked film formed by a sputtering method can be used as the conductive layer 120 .
- the conductive layer 120 is processed into a predetermined shape by a photolithography method and an etching method.
- the spacer 130 and the columnar structure 135 are formed on the substrate 110 and the conductive layer 120 .
- the spacer 130 and the columnar structure 135 are formed of an organic resin material such as an acrylic resin, an epoxy resin, and a polyimide resin.
- the spacer 130 and the columnar structure 135 are processed by a photolithography method and an etching method. When a polyimide resin having a photosensitive material is used as the spacer 130 and the columnar structure 135 , they can be processed only by a photolithography method.
- the height of the columnar structure 135 can be made different from the height of the spacer 130 .
- the processed spacer 130 and the columnar structure 135 may be cured by heat treatment as appropriate.
- the insulating layer 140 is formed on the substrate 110 , the conductive layer 120 , the spacer 130 and the columnar structure 135 .
- the insulating layer 140 is formed of a material such as silicon oxide, silicon oxynitride, silicon nitride, or the like.
- the insulating layer 140 may be a single layer or a stacked layer.
- the insulating layer 140 may be formed by a thermal CVD (Chemical Vapor Deposition) method, a plasma CVD method, a spin-coating method, a printing method, or the like. In this example, a silicon nitride film formed by a plasma CVD method is used.
- the pixel electrode 150 and the alignment film 160 are formed.
- a light transmission conductive film such as an ITO (indium tin oxide) or an IZO (indium zinc oxide) is used for the pixel electrode 150 .
- the film thickness of the pixel electrode 150 may be appropriately set to 100 nm or more and 1 ⁇ m or less.
- the pixel electrode 150 may be formed by a vacuum vapor deposition method, a sputtering method, or the like.
- an ITO film formed by a sputtering method can be used as the pixel electrode 150 .
- the pixel electrode 150 may be removed by a photolithography method and an etching method in a portion overlapping the spacer 130 .
- the alignment film 160 can be formed to a thickness of several hundred nanometers or more and several micrometers or less by a coating method, a vapor deposition method, a spraying method, an ink-jet method, a printing method, or the like.
- the alignment film 160 may be subjected to a rubbing treatment.
- a polyimide resin formed by a coating method is used.
- the alignment film 160 is removed by a photolithography method and an etching method in a portion that overlaps the columnar structure 135 . This allows the pixel electrode 150 on the columnar structure 135 to be exposed.
- the counter electrode 180 and the alignment film 170 are formed on a first surface 190 a of the substrate 190 .
- the counter electrode 180 is formed by the same material and method as the pixel electrode 150 .
- the ITO film formed by a sputtering method can be used as the counter electrode 180 .
- the alignment film 170 is formed by the same material and method as the alignment film 160 . In order to enhance the orientation of the liquid crystal layer 200 , the alignment film 170 is subjected to a rubbing treatment.
- the opening 170 a is formed on the alignment film 170 .
- the opening 170 a is formed in the region R 170 that overlaps the columnar structure 135 .
- the opening 170 a is formed by a photolithography method and an etching method.
- the alignment film 170 is formed of a photosensitive material, the opening 170 a can be formed only by a photolithography method.
- an adhesive (not shown) is formed on a peripheral region of the substrate 110 .
- a photo-curing adhesive is used for the adhesive.
- the photo-curing adhesive is cured by ultraviolet rays, electron rays, visible light, infrared rays, or the like.
- the adhesive includes an epoxy resin, an acrylic resin, a silicone resin, a phenolic resin, a polyimide resin, an imide resin, a PVC (polyvinylchloride) resin, a PVB (polyvinylbutyral) resin, an EVA (ethylene vinyl acetate) resin, silica, or the like.
- the liquid crystal layer 200 is formed inside a region surrounded by the adhesive.
- the liquid crystal layer 200 is formed by an ODF (One Drop Fill) method or the like.
- ODF One Drop Fill
- a nematic liquid crystal is used for the liquid crystal layer 200 .
- the liquid crystal layer 200 is not limited to this method.
- the liquid crystal layer 200 may be injected by an appropriate method.
- the substrate 100 and the substrate 190 serving as a counter substrate are bonded to each other using the adhesive.
- ultraviolet rays may be irradiated on an adhesive layer to cure the adhesive layer.
- the polarizer 210 is arranged on the second surface 190 b of the substrate 190
- the polarizer 220 and the display object 109 are arranged on the second surface 110 b of the substrate 110 and both are accommodated in the housing 105 .
- the electrooptical device 10 is manufactured.
- the display object 109 may be removable from the electrooptical device 10 .
- the display object 109 may not be accommodated in the housing 105 .
- an electrooptical device can be manufactured without forming a transistor or the like used for a driving circuit. Therefore, it is possible to suppress the process load to manufacture an electrooptical device.
- FIG. 14 is a cross-sectional view showing a part of a display region 101 A.
- the display region 101 A includes the substrate 110 , the conductive layer 120 , the spacer 130 , the columnar structure 135 , an insulating layer 140 A, the pixel electrode 150 , the alignment film 160 , the alignment film 170 , the counter electrode 180 , the substrate 190 , and the liquid crystal layer 200 .
- the insulating layer 140 A is formed of the same material as the insulating layer 140 of the first embodiment. However, the insulating layer 140 A has an opening 140 Aa on the conductive layer 120 of a capacitive element 30 A.
- the width of the opening 140 Aa is preferably 2 ⁇ m or more and 20 ⁇ m or less.
- An area of the opening 140 Aa is preferably less than 5% with respect to an area of the top surface in the conductive layer 120 . This is because the potential of the pixel electrode 150 can be gradually changed from the potential VGH to the potential VGL when the pressing is released and the conduction between the pixel electrode 150 and the counter electrode 180 is eliminated.
- the present invention is not limited thereto.
- the thickness of the insulating layer 140 A is reduced to 300 nm or less, the possibility that the insulating layer 140 A has minute defects increases. This results in the transfer of charges from the pixel electrode 150 to the conductive layer 120 via the minute defects, and the light transmission state and light non-transmission state of the electrooptical device can be controlled.
- an electrooptical device having a semiconductor layer in a part of the insulating layer 140 will be described.
- FIG. 15 is a cross-sectional view showing a part of a display region 101 B.
- the display region 101 B includes the substrate 110 , an insulating layer 140 B, a semiconductor layer 142 , the pixel electrode 150 , the alignment film 160 , the alignment film 170 , the counter electrode 180 , the substrate 190 , and the liquid crystal layer 200 in addition to the conductive layer 120 , the spacer 130 , and the columnar structure 135 .
- the insulating layer 140 B is formed of the same material as the insulating layer 140 of the first embodiment. However, the insulating layer 140 B has an opening 140 Ba on the conductive layer 120 of a capacitive element 30 B.
- the width of the opening 140 Ba is preferably 2 ⁇ m or more and 20 ⁇ m or less.
- the semiconductor layer 142 is provided in the opening 140 Ba.
- a semiconductor material is used for the semiconductor layer 142 .
- the semiconductor layer 142 is formed of a silicon material, for example, amorphous silicon, polycrystalline silicon, or the like may be used.
- an oxide semiconductor is used for the semiconductor layer 142 , a metal material such as indium, gallium, zinc, titanium, aluminum, tin, and cerium can be used.
- an oxide semiconductor (IGZO) containing indium, gallium, or zinc can be used.
- the semiconductor layer 142 can be formed by a sputtering method, a vapor deposition method, a plating method, a CVD method, or the like.
- an electrooptical device having a semiconductor layer and a doping layer instead of the insulating layer 140 will be described.
- FIG. 16 is a cross-sectional view showing a part of a display region 101 C.
- the display region 101 C includes the semiconductor layer 142 in addition to the substrate 110 , the conductive layer 120 , the spacer 130 , the columnar structure 135 , the pixel electrode 150 , the alignment film 160 , the alignment film 170 , the counter electrode 180 , the substrate 190 , and the liquid crystal layer 200 .
- the semiconductor layer 142 is provided instead of the insulating layer 140 .
- the semiconductor layer 142 is formed of the same material as the semiconductor layer 142 described in the second embodiment.
- the semiconductor layer 142 has a doping region 142 a in a portion of a capacitive element 30 C that overlaps the conductive layer 120 .
- the doping region 142 a has higher conductivity than the other regions of the semiconductor layer 142 . Examples of the material to be doped include phosphorus, boron, and arsenic.
- the width of the doping region 142 a is preferably 5 ⁇ m or more and 50 ⁇ m or less.
- FIG. 17 is a top view showing a part of a display region 101 D. As shown in FIG. 17 , the display region 101 D has the conductive layer 120 , the spacer 130 , a columnar structure 135 D and the pixel electrode 150 .
- the distance between the spacer 130 and the columnar structure 135 D may be different for each spacer.
- the columnar structure 135 D is arranged in the upper left offset from the center in the pixel region Pix.
- a distance D 135 D 1 between a spacer 130 - 1 and the columnar structure 135 D is smaller than a distance D 135 D 2 between a spacer 130 - 2 and the columnar structure 135 D.
- the columnar structure 135 is offset from the center, so that the required pressing amount is increased as compared with the case where the columnar structure 135 is arranged in the center.
- FIG. 18 is a top view showing a part of a display region 101 E. As shown in FIG. 18 , the display region 101 E has the conductive layer 120 , the spacer 130 , a columnar structure 135 E, and the pixel electrode 150 .
- a plurality of columnar structures 135 E is arranged in one pixel region Pix.
- a columnar structure 135 E- 1 is arranged in the center of the pixel region Pix, and columnar structures 135 E- 2 , 135 E- 3 , 135 E- 4 , 135 E- 5 are arranged in a region between the spacer 130 .
- each of the columnar structures 135 E has the same size.
- the height of each columnar structure may not be necessarily the same.
- the columnar structure 135 E may be higher as the columnar structure 135 E moves away from the center of the pixel area Pix.
- FIG. 19 is a top view showing a part of a display region 101 F.
- the display region 101 F includes the conductive layer 120 , the spacer 130 , the columnar structure 135 , and a pixel electrode 150 F.
- an end portion 151 F of the pixel electrode 150 F is shown by a solid line, and the end portion 121 of the conductive layer 120 is shown by a dotted line.
- the pixel electrode 150 F has a configuration that does not overlap the conductive layer 120 in an upper side PixU of the pixel region Pix. As a result, the influence on the adjacent pixel region Pix can be minimized.
- FIG. 20 is a top view showing a part of a display region 101 F 1 which is a modification of the display region 101 F.
- the pixel electrode 150 may have a configuration that does not overlap with the conductive layer 120 at a right side PixR of the pixel region Pix in the display region 101 F 1 .
- FIG. 21 is a top view showing a part of a display region 101 F 2 which is a modification of the display region 101 F.
- the pixel electrode 150 may have a configuration that does not overlap the conductive layer 120 in one direction.
- the pixel electrode 150 may have a configuration that does not overlap the conductive layer 120 in the upper side PixU and the bottom side PixD of the pixel region Pix, that is, in the second direction D 2 . With this configuration, it is possible to reduce the influence of the potential fluctuation on the adjacent pixels in the second direction D 2 .
- FIG. 22 is a top view showing a part of a display region 101 F 3 which is a modification of the display region 101 F.
- the display region 101 F 3 may have a configuration that does not overlap the conductive layer 120 on the left side PixL and the right side PixR of the pixel region Pix, that is, in the first direction D 1 . With this configuration, it is possible to reduce the influence of the potential fluctuation on the adjacent pixels in the first direction D 1 .
- FIG. 23 is a top view showing a part of a display region 101 F 4 which is a modification of the display region 101 F.
- the display region 101 F 4 may have a configuration in which the pixel electrode 150 and the conductive layer 120 do not overlap in the region adjacent to the pixel region Pix.
- the pixel electrode 150 may have a configuration that does not overlap the conductive layer 120 on the upper side PixU and the right side PixR of the pixel region Pix.
- FIG. 24 is a top view showing a part of a display region 101 F 5 which is a modification of the display region 101 F.
- the pixel electrode 150 may have a configuration that does not overlap the conductive layer 120 on the upper side PixU, the bottom side PixD, and the right side PixR of the pixel region Pix.
- FIG. 25 is a top view showing a part of a display region 101 F 6 which is a modification of the display region 101 F.
- the pixel electrode 150 may have a configuration that does not overlap with the conductive layer 120 on the upper side PixU, the left side PixL, and the right side PixR of the pixel region Pix.
- the pixel electrode 150 is configured to overlap the conductive layer 120 in at least a part of the periphery of the pixel region Pix (one side). As a result, the influence of the adjacent pixels, specifically, fluctuation of the potential of the adjacent pixel electrodes 150 can be minimized.
- FIG. 26 is a cross-sectional view between A 1 -A 2 of a display region 101 G.
- the display region 101 G includes the conductive layer 120 , the spacer 130 , a columnar structure 135 G, and the pixel electrode 150 , the display object 109 , the substrate 110 , the insulating layer 140 , an alignment film 160 G, the alignment film 170 , the counter electrode 180 , the substrate 190 , and the liquid crystal layer 200 , the polarizer 210 , and the polarizer 220 .
- the columnar structure 135 G is arranged on the first surface 190 a side of the substrate 190 .
- the alignment film 160 G is provided on the pixel electrode 150 .
- the alignment film 160 G has the same function and material as the alignment film 160 .
- the alignment film 160 G has an opening 160 Ga in a region R 160 G that overlaps the columnar structure 135 G so as not to be arranged on an upper surface 135 Ga of the columnar structure.
- a width D 160 G of the opening 160 Ga is wider than a width D 135 Ga of the upper surface 135 Ga of the columnar structure 135 G. Even when the present embodiment is used, the orientation state of the liquid crystal can be switched by the same effects as those of the first embodiment, that is, by being pressed.
- the columnar structure 135 is not limited to the present embodiment and may be arranged on both the substrate 190 and the substrate 110 .
- the display region normally changes from the light non-transmission state to the light transmission state by being pressed.
- the present invention is not limited thereto.
- the display region may change from the normal light transmission state to the light non-transmission state by being pressed.
- the present invention is not limited thereto.
- the first direction and the second direction may intersect at 45 degrees, 60 degrees, or 120 degrees.
- the pixel region Pix is not limited to a square.
- the pixel region Pix may have a hexagon or octagon shape. By making the pixel region Pixel a polygon shape, it is possible to achieve a display region having high definition.
- the pixel region Pix may be a shape other than a polygon.
- the conductive layer 120 has the function of a light-shielding film.
- the invention is not limited thereto.
- the function of the light-shielding film may be achieved by other materials.
- a black resin material may be used for a portion overlapping the spacer 130 and the columnar structure 135 .
- a liquid crystal element driven by a TN method is used.
- the present invention is not limited thereto.
- a light scattering type liquid crystal element may be used.
- a polymer dispersed liquid crystal (PDLC) is used as the liquid crystal layer 200 . In this case, it is not necessary to arrange the polarizer.
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Abstract
An electrooptical device includes a first substrate; a second substrate, a plurality of spacers maintaining a distance between the first substrate and the second substrate; a pixel electrode provided on the first substrate; a conductive layer overlapping a part of the pixel electrode; a protrusion covered with the pixel electrode; a counter electrode opposed to the pixel electrode; a first alignment film provided on the pixel electrode and having a first opening in a portion overlapping the protrusion; a second alignment film provided on the counter electrode and having a second opening in the portion overlapping the protrusion; and a liquid crystal layer provided between the first alignment film and the second alignment film, and a distance from the bottom surface to the top surface in the protrusion is smaller than a distance from the bottom surface to the top surface in the spacer.
Description
- This application is based upon and claims the benefit of priority from the prior Japanese Patent Application 2018-227251, filed on Dec. 4, 2018, and the prior International Application PCT/JP20191033991, filed on Aug. 29, 2019 and the entire contents of which are incorporated herein by reference.
- An embodiment of the present invention relates to an electrooptical device.
- A liquid crystal electrooptical device utilizing the electrooptical effect of liquid crystals and an organic electroluminescence electrooptical device using an organic electroluminescent (organic EL) element have been developed and commercialized as an electrooptical device used in electric appliances and electronic equipment.
- Electronic memo pads are also starting to become popular as stationery applications. A cholesteric liquid crystal is normally used for an electrooptical device used as electronic memo pads. The electrooptical device has a configuration in which the electrooptical device is normally in alight transmission state, and becomes a light non-transmission state (reflective state) at the location where it is pressed. Japanese Unexamined Patent Publication No. 2001-228975 discloses a liquid crystal electrooptical device for detecting location information when upper and lower substrates are conducting through spherical particles when a liquid crystal electrooptical device is pressed.
- According to an embodiment of the present invention, an electrooptical device includes a first substrate; a second substrate opposed to the first substrate; a plurality of spacers maintaining a distance between the first substrate and the second substrate; a pixel electrode provided on the first substrate; a conductive layer provided on the side of the first substrate in the pixel electrode and overlapping a part of the pixel electrode; a structure (protrusion) provided on the first substrate, the protrusion protruding toward the side of the second substrate, and being covered with the pixel electrode; a counter electrode provided on the second substrate and opposed to the pixel electrode; a first alignment film provided on the pixel electrode and having a first opening in a portion overlapping the protrusion; a second alignment film provided on the counter electrode and having a second opening in the portion overlapping the protrusion; and a liquid crystal layer provided between the first alignment film and the second alignment film, and a distance from the bottom surface to the top surface in the protrusion is smaller than a distance from the bottom surface to the top surface in the spacer.
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FIG. 1 is a perspective view of an electrooptical device according to an embodiment of the present invention; -
FIG. 2 is a top view showing a part of a display region according to an embodiment of the present invention; -
FIG. 3 is a cross-sectional view showing a part of a display region according to an embodiment of the present invention; -
FIG. 4 is a schematic diagram showing a circuit configuration of an electrooptical device according to an embodiment of the present invention; -
FIG. 5 is a cross-sectional view of a pressed display region when a part of electrooptical device according to an embodiment of the present invention is pressed; -
FIG. 6 is a schematic diagram showing a circuit configuration of an electrooptical device according to an embodiment of the present invention; -
FIG. 7 is a schematic diagram showing a circuit configuration of an electrooptical device according to an embodiment of the present invention; -
FIG. 8 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention; -
FIG. 9 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention; -
FIG. 10 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention; -
FIG. 11 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention; -
FIG. 12 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention; -
FIG. 13 is a cross-sectional view illustrating a manufacturing method of an electrooptical device according to an embodiment of the present invention; -
FIG. 14 is a cross-sectional view showing a part of a display region according to an embodiment of the present invention; -
FIG. 15 is a cross-sectional view showing a part of a display region according to an embodiment of the present invention; -
FIG. 16 is a cross-sectional view showing a part of a display region according to an embodiment of the present invention; -
FIG. 17 is a top view showing a part of a display region according to an embodiment of the present invention; -
FIG. 18 is a top view showing a part of a display region according to an embodiment of the present invention; -
FIG. 19 is a top view showing a part of a display region according to an embodiment of the present invention; -
FIG. 20 is a top view showing a part of a display region according to an embodiment of the present invention; -
FIG. 21 is a top view showing a part of a display region according to an embodiment of the present invention; -
FIG. 22 is a top view showing a part of a display region according to an embodiment of the present invention; -
FIG. 23 is a top view showing a part of a display region according to an embodiment of the present invention; -
FIG. 24 is a top view showing a part of a display region according to an embodiment of the present invention; -
FIG. 25 is a top view showing a part of a display region according to an embodiment of the present invention; and -
FIG. 26 is a cross-sectional view showing a part of a display region according to an embodiment of the present invention. - A new electrooptical device that becomes a light transmission state from a normally light non-transmission state when it is pressed is being developed as a method different from the conventional method. When an electrooptical device with this new method is manufactured using the current technique, a display device (also called a touch panel) that combines a touch sensor for detecting a position with a display element, and a driving circuit for moving the display element are required. In this case, manufacturing the touch panel may require many transistors, many wirings, and many insulating layers. As a result, the manufacturing processes of electro-optical devices may increase.
- An embodiment according to the present invention provided below discloses an electrooptical device that is easy to manufacture and is capable of switching a display state.
- Embodiments of the present invention will be described below with reference to the drawings. The disclosure is merely an example, and those skilled in the art could easily conceive of appropriate changes while maintaining the gist of the invention and such changes are naturally included in the scope of the invention. In addition, although the drawings may be schematically represented with respect to widths, thicknesses, shapes, and the like of the respective portions in comparison with actual embodiments for the sake of clarity of explanation, they are merely an example and do not limit the interpretation of the present invention. In this specification and each of the drawings, the same reference symbols (or reference symbols denoted with A, B, and the like after a numeral) are given to the same elements as those described above with reference to the preceding drawings, and a detailed description thereof may be omitted as appropriate. In addition, the letters “first” and “second” attached to each element are convenient labels used to distinguish each element and have no further meaning unless otherwise stated.
- Furthermore, in the detailed description of the present invention, in defining the positional relationship between one component and another, the terms “above” and “below” include not only the case of being positioned directly above or below one component, but also the case of interposing another component therebetween, unless otherwise specified.
- In this specification, although “electrode” and “wiring” are used to dearly separate each function, both are a “conductive layer” and have similar meanings.
-
FIG. 1 is a perspective view of anelectrooptical device 10 according to an embodiment of the present invention. InFIG. 1 , theelectrooptical device 10 has adisplay region 101 having pixels, apower supply 103, and ahousing 105 that houses thedisplay region 101 and thepower supply 103. - The
display region 101 is normally in the light non-transmission state. When pressed with astylus 107 or fingertips, thedisplay region 101 switches to the light transmission state in the pressed region. When thedisplay region 101 is switched to the light transmission state, a display object 109 (paper or display device) arranged on the back side of the display region (asecond surface 110 b side of asubstrate 110, which will be described later) is displayed. - The
power supply 103 applies a voltage to aconductive layer 120 and acounter electrode 180, which will be described later, to change the orientation state of the liquid crystal. -
FIG. 2 shows a top view of apart 101 a of thedisplay region 101 ofFIG. 1 . Thedisplay region 101 has theconductive layer 120, aspacer 130, a columnar structure 135 (also referred to as a protrusion), and apixel electrode 150. - As shown in
FIG. 2 , theconductive layers 120 are arranged in a grid shape in a first direction D1 and a second direction D2 intersecting the first direction D1. In this example, the first direction D1 and the second direction D2 are orthogonal to each other. In this case, a region defined by theconductive layer 120 is defined as a pixel region Pix in the present embodiment. In this example, the pixel region Pix is substantially square, and the pixel region Pix is defined as one pixel. - The
spacer 130 is arranged in a grid shape in the first direction D1 and the second direction D2 similar to theconductive layers 120. Thespacer 130 is arranged at the corners of the respective pixel regions Pix. In this case, thespacer 130 is arranged overlapping theconductive layer 120. - The
columnar structures 135 are arranged on a part of the pixel region Pix respectively. In this example, thecolumnar structure 135 is arranged at the center of the pixel region Pix. Thecolumnar structure 135 is arranged overlapping theconductive layer 120. Thecolumnar structure 135 is not limited to a columnar shape. Thecolumnar structure 135 may be a truncated cone shape, or may be hemispherical. Thecolumnar structure 135 is positioned so that the distance between thepixel electrode 150 and thecounter electrode 180 is close. - The
pixel electrode 150 is arranged in each pixel region Pix. InFIG. 2 , anend portion 151 of thepixel electrode 150 is indicated by a solid line, and anend portion 121 of theconductive layer 120 is indicated by a dotted line. As shown inFIG. 2 , thepixel electrode 150 overlaps theconductive layer 120 in a part of the pixel region Pix. In this example, thepixel electrode 150 overlaps theconductive layer 120 at the periphery of the pixel region Pix (foursides 120 a in this example). Thus, acapacitive element 30 is formed in combination with an insulatinglayer 140 to be described later. -
FIG. 3 is a cross-sectional view between A1-A2 of thedisplay region 101. As shown inFIG. 3 , thedisplay region 101 includes thedisplay object 109, thesubstrate 110, the insulatinglayer 140, analignment film 160, analignment film 170, thecounter electrode 180, asubstrate 190, aliquid crystal layer 200, apolarizer 210, and apolarizer 220 as well as theconductive layer 120, thespacer 130, thecolumnar structure 135, and thepixel electrode 150. InFIG. 3 , a portion where theconductive layer 120, the insulatinglayer 140, and thepixel electrode 150 overlap has a function as thecapacitive element 30. Thepixel electrode 150, theliquid crystal layer 200, and thecounter electrode 180 have a function as a display element (a liquid crystal element 50). Materials used in a known liquid crystal panel can be applied as a liquid crystal material located in theliquid crystal layer 200. - The
substrate 110 and thesubstrate 190 both hold thedisplay region 101 and have light transmittance. A glass substrate or an organic resin material is used for thesubstrate 110 and thesubstrate 190. In addition to the above materials, thesubstrate 110 and thesubstrate 190 may be formed of an insulating material on their surfaces. Thedisplay object 109 is used on thesecond surface 110 b side of thesubstrate 110. Paper or a display device, or the like may be used as thedisplay object 109. In this case, asecond surface 190 b of thesubstrate 190 becomes a display surface. The position where thedisplay object 109 is arranged may be outside thesecond surface 190 b of thesubstrate 190. In this case, thesecond surface 110 b of thesubstrate 110 becomes the display surface. - The
conductive layer 120 is provided on afirst surface 110 a of thesubstrate 110. Theconductive layer 120 may be formed of a conductive material having a light-shielding property selected from tantalum, tungsten, titanium, molybdenum, aluminum, or the like. Theconductive layer 120 may be a single-layer structure of the aforementioned conductive material or a stacked structure. In this example, a laminated film of molybdenum and aluminum is used as theconductive layer 120. For example, a base film made of an inorganic insulating film may be arranged between thesubstrate 110 and theconductive layer 120. As described above, thespacer 130, thecolumnar structure 135, and theconductive layer 120 are arranged to overlap each other. Theliquid crystal layer 200 is not arranged at a location where thespacer 130 is arranged. In other words, thealignment film 160 located on an upper surface of thespacer 130 is in direct contact with thealignment film 170. Since thealignment film 170 is not arranged at a location where thecolumnar structure 135 is arranged, it is not possible to control the orientation of liquid crystal molecules in theliquid crystal layer 200. Therefore, theconductive layer 120 arranged below thespacer 130 and thecolumnar structure 135 also has a function as a light-shielding film to prevent thedisplay object 109 arranged on thesecond surface 110 b side of thesubstrate 110 from being unintentionally displayed. In this case, theconductive layer 120 is provided wider than thespacer 130 and thecolumnar structure 135 in a portion where thespacer 130, thecolumnar structure 135, and theconductive layer 120 overlap. - The
spacer 130 is provided on theconductive layer 120. Thespacer 130 maintains an interval between thesubstrate 110 and thesubstrate 190 to a predetermined thickness. An inorganic insulating material or an organic insulating material or a mixed material of an inorganic insulating material and an organic insulating material may be used as thespacer 130. In this example, a polyimide resin is used for thespacer 130. - The
columnar structure 135 is provided on theconductive layer 120. Thecolumnar structure 135 protrudes toward thesubstrate 190. Thecolumnar structure 135 is formed of the same material as thespacer 130. In this example, a polyimide resin is used for thecolumnar structure 135. In this case, a distance H135 from alower surface 135 b to anupper surface 135 a of thecolumnar structure 135 is preferably smaller than a distance H130 from alower surface 130 b to anupper surface 130 a of thespacer 130. - The insulating
layer 140 is provided on thesubstrate 110, theconductive layer 120, thespacer 130, and thecolumnar structure 135. The insulatinglayer 140 can be formed of silicon oxide, silicon oxynitride, silicon nitride, or other high dielectric constant inorganic materials. In this case, a silicon nitride film is used for the insulatinglayer 140. - The
pixel electrode 150 is provided on the insulatinglayer 140. In this case, thepixel electrode 150 is provided so as to cover the side surface and the upper surface of thecolumnar structure 135. A material having light transmittance is used for thepixel electrode 150. In this example, indium tin oxide (ITO) is used for thepixel electrode 150. - The
alignment film 160 is provided on thepixel electrode 150. Thealignment film 160 controls the orientation of the liquid crystal molecules in theliquid crystal layer 200. An organic resin or the like is used for thealignment film 160. In this example, an acrylic resin is used for thealignment film 160. Thealignment film 160 has anopening 160 a in a region R160 overlapping thecolumnar structure 135 so as not to be arranged on theupper surface 135 a of thecolumnar structure 135. - The
alignment film 170 controls the orientation of the liquid crystal molecules in theliquid crystal layer 200, similar to thealignment film 160. Thealignment film 170 is formed of the same material as thealignment film 160. Thealignment film 170 has anopening 170 a in a region R170 that overlaps thecolumnar structure 135. A width D170 a of the opening 170 a is wider than a width D135 a of theupper surface 135 a of the columnar structure 135 (more specifically, the width of the upper surfaces of the insulatinglayer 140 and thepixel electrode 150 covering theupper surface 135 a of the columnar structure 135). - The
counter electrode 180 is provided opposite to thepixel electrode 150. Thecounter electrode 180 has a function as a common electrode of theliquid crystal element 50. Thecounter electrode 180 has light transmittance. The same material as thepixel electrode 150 is used for thecounter electrode 180. In this example, ITO is used for thecounter electrode 180. - The
liquid crystal layer 200 is between thealignment film 160 and thealignment film 170. An orientation of the liquid crystal molecules in theliquid crystal layer 200 is controlled by the potential difference between thepixel electrode 150 and thecounter electrode 180. In this example, a nematic liquid crystal is used for theliquid crystal layer 200, and theliquid crystal element 50 is driven by a TN (Twist Nematic) method. By using thepolarizer 210 and thepolarizer 220 together with theliquid crystal element 50, it is possible to transmit a specific light. - Next, driving of the
liquid crystal element 50 will be described with reference toFIGS. 4 to 7 . -
FIG. 4 is a schematic diagram showing a circuit configuration of theliquid crystal element 50 of theelectrooptical device 10. As shown inFIG. 4 , a HIGH potential VGH is applied to thecounter electrode 180. In this example, 5V is applied to thecounter electrode 180. On the other hand, no potential is directly applied to thepixel electrode 150, and thepixel electrode 150 has a floating structure. For example, the potential of GND, that is, 0V is applied to theconductive layer 120. Thepixel electrode 150 is capacitively coupled to theconductive layer 120, and thepixel electrode 150 is charged with a potential VGL lower than thecounter electrode 180. For example, thepixel electrode 150 is charged with the potential GND or a negative potential. This potential difference creates an electric field in theliquid crystal layer 200, and the liquid crystal molecules in theliquid crystal layer 200 are oriented along the electric field. As a result, thedisplay region 101 is changed to the light non-transmission state. In this case, thepixel electrode 150, theconductive layer 120, and the insulatinglayer 140 which is a dielectric form thecapacitive element 30. -
FIG. 5 is a cross-sectional view of thedisplay region 101 when pressing a part of thedisplay region 101. As shown inFIG. 5 , pressing a part of thedisplay region 101 causes thesubstrate 190, thecounter electrode 180, and thealignment film 170 to bend. In this case, as described above, the opening 170 a is arranged in thealignment film 170. As a result, aportion 150 a of thepixel electrode 150 covering theupper surface 135 a of thecolumnar structure 135 is electrically connected to thecounter electrode 180. If the pixel electrode 150 (150 a) and thecounter electrode 180 are electrically connected, the opening 160 a and theopening 170 a may not be provided. -
FIG. 6 is a schematic diagram showing a circuit configuration of theliquid crystal element 50 of theelectrooptical device 10 when pressing a part of thedisplay region 101. As shown inFIG. 6 , by connecting theportion 150 a of thepixel electrode 150 to thecounter electrode 180, the HIGH potential VGH applied to thecounter electrode 180 is also applied to thepixel electrode 150. Specifically, a potential of 5V is applied to the pixel electrode 156. As a result, since no electric field is generated with respect to theliquid crystal layer 200, the orientation state of the liquid crystal molecules changes from the orientation state inFIG. 3 . As a result, the orientation state is changed to the light transmission state in a part of thedisplay region 101, in other words, in a region where thepixel electrode 150 electrically connected to thecounter electrode 180 is located. -
FIG. 7 is a schematic diagram showing a circuit configuration of theliquid crystal element 50 of theelectrooptical device 10 after the pressing is released. As shown inFIG. 7 , when theportion 150 a of thepixel electrode 150 is separated from thecounter electrode 180, a potential difference between the potential VGH (5V) stored in thepixel electrode 150 and the potential GND (0V) applied to theconductive layer 120 occurs in thecapacitive element 30. In this case, the leak current caused by an insulatingresistance 122 of thecapacitive element 30 flows gradually from thepixel electrode 150 to theconductive layer 120. Thus, the potential of thepixel electrode 150 gradually decreases from 5V, and as a result, the potential of thepixel electrode 150 again becomes the potential VGL. Thereafter, an electric field is generated with respect to theliquid crystal layer 200 in the same manner as inFIG. 4 , and theliquid crystal layer 200 is oriented again along the electric field. That is, it is possible to gradually change from the light transmission state to the light non-transmission state. - The time until the liquid crystal is oriented again can be appropriately adjusted by a time constant calculated based on the insulating resistance of the capacitance value and dielectric (the insulating layer 140) in the
capacitive element 30 including theconductive layer 120, the insulatinglayer 140, and thepixel electrode 150. By using the above method, in thedisplay region 101, it is possible to control the light transmission state and the light non-transmission state for each pixel region Pix (pixel). In other words, the display state can be controlled without the specific use of a driving circuit. - Hereinafter, a manufacturing method of the
electrooptical device 10 will be described with reference toFIGS. 8 to 13 . - First, as shown in
FIG. 8 , theconductive layer 120 is formed on asubstrate 100. A material having an insulating property and light transmittance is used for thesubstrate 100 for providing thedisplay object 109 on thesecond surface 110 b side. - Specifically, the
substrate 110 may be formed of an inorganic insulating material, an organic resin material, or a conductive material that has been subjected to an insulating treatment. More specifically, examples thereof include a glass substrate such as a quartz substrate, an alkali-free glass substrate, and a soda glass, an inorganic insulating substrate such as sapphire and alumina, and an acrylic resin, an epoxy resin, a polyimide resin, and a polyethylene terephthalate resin and the like are used for thesubstrate 110. For example, when an organic resin substrate is used for thesubstrate 100, a polyimide substrate may be used. The organic resin substrate can have a thickness of several micrometers to several tens of micrometers, As a result, a sheet display having flexibility can be realized. Prior to forming theconductive layer 120, for example, the base film of an inorganic insulating material may be formed on thesubstrate 100. For example, the base film is formed on the entire surface of thefirst surface 110 a. - The
conductive layer 120 may be formed of a material such as a metal element selected from tungsten, aluminum, chromium, copper, titanium, tantalum, molybdenum, nickel, cobalt, tungsten, indium, tin, and zinc, an alloy containing any of these metal elements as a component, or an alloy containing any of these metal elements in combination. Nitrogen, oxygen, hydrogen, or the like contained in the above materials may be used as theconductive layer 120. Theconductive layer 120 may be a single layer film or a stacked film. Theconductive layer 120 is formed by a sputtering method, a CVD method, a plating method, and a printing method or the like. For example, a molybdenum-aluminum stacked film formed by a sputtering method can be used as theconductive layer 120. Theconductive layer 120 is processed into a predetermined shape by a photolithography method and an etching method. - Next, as shown in
FIG. 9 , thespacer 130 and thecolumnar structure 135 are formed on thesubstrate 110 and theconductive layer 120. Thespacer 130 and thecolumnar structure 135 are formed of an organic resin material such as an acrylic resin, an epoxy resin, and a polyimide resin. Thespacer 130 and thecolumnar structure 135 are processed by a photolithography method and an etching method. When a polyimide resin having a photosensitive material is used as thespacer 130 and thecolumnar structure 135, they can be processed only by a photolithography method. In this case, when a positive photosensitive material is used, it is preferable to use a light-shielding film for a portion corresponding to thespacer 130, and to use a half-tone mask for a portion corresponding to thecolumnar structure 135. By using the half-tone mask, the height of thecolumnar structure 135 can be made different from the height of thespacer 130. The processedspacer 130 and thecolumnar structure 135 may be cured by heat treatment as appropriate. - Next, as shown in
FIG. 10 , the insulatinglayer 140 is formed on thesubstrate 110, theconductive layer 120, thespacer 130 and thecolumnar structure 135. The insulatinglayer 140 is formed of a material such as silicon oxide, silicon oxynitride, silicon nitride, or the like. The insulatinglayer 140 may be a single layer or a stacked layer. The insulatinglayer 140 may be formed by a thermal CVD (Chemical Vapor Deposition) method, a plasma CVD method, a spin-coating method, a printing method, or the like. In this example, a silicon nitride film formed by a plasma CVD method is used. - Next, as shown in
FIG. 11 , thepixel electrode 150 and thealignment film 160 are formed. A light transmission conductive film such as an ITO (indium tin oxide) or an IZO (indium zinc oxide) is used for thepixel electrode 150. For example, the film thickness of thepixel electrode 150 may be appropriately set to 100 nm or more and 1 μm or less. Thepixel electrode 150 may be formed by a vacuum vapor deposition method, a sputtering method, or the like. For example, an ITO film formed by a sputtering method can be used as thepixel electrode 150. Thepixel electrode 150 may be removed by a photolithography method and an etching method in a portion overlapping thespacer 130. - An organic resin material such as an acrylic resin, a polyimide resin, or an epoxy resin is used for the
alignment film 160. Thealignment film 160 can be formed to a thickness of several hundred nanometers or more and several micrometers or less by a coating method, a vapor deposition method, a spraying method, an ink-jet method, a printing method, or the like. In order to enhance the orientation of theliquid crystal layer 200, thealignment film 160 may be subjected to a rubbing treatment. In this example, a polyimide resin formed by a coating method is used. - The
alignment film 160 is removed by a photolithography method and an etching method in a portion that overlaps thecolumnar structure 135. This allows thepixel electrode 150 on thecolumnar structure 135 to be exposed. - Next, as shown in
FIG. 12 , thecounter electrode 180 and thealignment film 170 are formed on afirst surface 190 a of thesubstrate 190. Thecounter electrode 180 is formed by the same material and method as thepixel electrode 150. For example, the ITO film formed by a sputtering method can be used as thecounter electrode 180. - The
alignment film 170 is formed by the same material and method as thealignment film 160. In order to enhance the orientation of theliquid crystal layer 200, thealignment film 170 is subjected to a rubbing treatment. - Next, as shown in
FIG. 13 , the opening 170 a is formed on thealignment film 170. The opening 170 a is formed in the region R170 that overlaps thecolumnar structure 135. The opening 170 a is formed by a photolithography method and an etching method. When thealignment film 170 is formed of a photosensitive material, the opening 170 a can be formed only by a photolithography method. - Next, an adhesive (not shown) is formed on a peripheral region of the
substrate 110. For example, a photo-curing adhesive is used for the adhesive. The photo-curing adhesive is cured by ultraviolet rays, electron rays, visible light, infrared rays, or the like. Specifically, the adhesive includes an epoxy resin, an acrylic resin, a silicone resin, a phenolic resin, a polyimide resin, an imide resin, a PVC (polyvinylchloride) resin, a PVB (polyvinylbutyral) resin, an EVA (ethylene vinyl acetate) resin, silica, or the like. - Next, the
liquid crystal layer 200 is formed inside a region surrounded by the adhesive. Theliquid crystal layer 200 is formed by an ODF (One Drop Fill) method or the like. In this example, a nematic liquid crystal is used for theliquid crystal layer 200. Theliquid crystal layer 200 is not limited to this method. Theliquid crystal layer 200 may be injected by an appropriate method. - Next, the
substrate 100 and thesubstrate 190 serving as a counter substrate are bonded to each other using the adhesive. After bonding thesubstrate 110 and thesubstrate 190, ultraviolet rays may be irradiated on an adhesive layer to cure the adhesive layer. Finally, thepolarizer 210 is arranged on thesecond surface 190 b of thesubstrate 190, thepolarizer 220 and thedisplay object 109 are arranged on thesecond surface 110 b of thesubstrate 110 and both are accommodated in thehousing 105. Thus, theelectrooptical device 10 is manufactured. Thedisplay object 109 may be removable from theelectrooptical device 10. Thedisplay object 109 may not be accommodated in thehousing 105. - By using the above manufacturing method, an electrooptical device can be manufactured without forming a transistor or the like used for a driving circuit. Therefore, it is possible to suppress the process load to manufacture an electrooptical device.
- In this embodiment, an electrooptical device having an opening in a part of the insulating
layer 140 will be described. -
FIG. 14 is a cross-sectional view showing a part of adisplay region 101A. As shown inFIG. 14 , thedisplay region 101A includes thesubstrate 110, theconductive layer 120, thespacer 130, thecolumnar structure 135, an insulatinglayer 140A, thepixel electrode 150, thealignment film 160, thealignment film 170, thecounter electrode 180, thesubstrate 190, and theliquid crystal layer 200. - The insulating
layer 140A is formed of the same material as the insulatinglayer 140 of the first embodiment. However, the insulatinglayer 140A has an opening 140Aa on theconductive layer 120 of acapacitive element 30A. The width of the opening 140Aa is preferably 2 μm or more and 20 μm or less. - By using the present embodiment, in addition to charge transfer due to the capacitive coupling between the
conductive layer 120 and thepixel electrode 150 in thecapacitive element 30A, a small amount of charge transfer occurs by electrically connecting theconductive layer 120 and thepixel electrode 150 in the opening 140Aa. This makes it possible to control the light transmission state and light non-transmission state of the electrooptical device with higher accuracy. An area of the opening 140Aa is preferably less than 5% with respect to an area of the top surface in theconductive layer 120. This is because the potential of thepixel electrode 150 can be gradually changed from the potential VGH to the potential VGL when the pressing is released and the conduction between thepixel electrode 150 and thecounter electrode 180 is eliminated. - In the present embodiment, although an example in which the opening 140Aa is provided in the insulating
layer 140A is shown, the present invention is not limited thereto. For example, when the thickness of the insulatinglayer 140A is reduced to 300 nm or less, the possibility that the insulatinglayer 140A has minute defects increases. This results in the transfer of charges from thepixel electrode 150 to theconductive layer 120 via the minute defects, and the light transmission state and light non-transmission state of the electrooptical device can be controlled. - In the present embodiment, an electrooptical device having a semiconductor layer in a part of the insulating
layer 140 will be described. -
FIG. 15 is a cross-sectional view showing a part of adisplay region 101B. As shown inFIG. 15 , thedisplay region 101B includes thesubstrate 110, an insulatinglayer 140B, asemiconductor layer 142, thepixel electrode 150, thealignment film 160, thealignment film 170, thecounter electrode 180, thesubstrate 190, and theliquid crystal layer 200 in addition to theconductive layer 120, thespacer 130, and thecolumnar structure 135. - The insulating
layer 140B is formed of the same material as the insulatinglayer 140 of the first embodiment. However, the insulatinglayer 140B has an opening 140Ba on theconductive layer 120 of acapacitive element 30B. The width of the opening 140Ba is preferably 2 μm or more and 20 μm or less. - The
semiconductor layer 142 is provided in the opening 140Ba. A semiconductor material is used for thesemiconductor layer 142. When thesemiconductor layer 142 is formed of a silicon material, for example, amorphous silicon, polycrystalline silicon, or the like may be used. When an oxide semiconductor is used for thesemiconductor layer 142, a metal material such as indium, gallium, zinc, titanium, aluminum, tin, and cerium can be used. For example, an oxide semiconductor (IGZO) containing indium, gallium, or zinc can be used. Thesemiconductor layer 142 can be formed by a sputtering method, a vapor deposition method, a plating method, a CVD method, or the like. - By using the present embodiment, in addition to the transfer of charges due to the capacitive coupling between the
conductive layer 120 and thepixel electrode 150 in thecapacitive element 30B, a small amount of charge transfer occurs through thesemiconductor layer 142. This makes it possible to control the light transmission state and light non-transmission state of the electrooptical device with higher accuracy. - In the present embodiment, an electrooptical device having a semiconductor layer and a doping layer instead of the insulating
layer 140 will be described. -
FIG. 16 is a cross-sectional view showing a part of adisplay region 101C. As shown inFIG. 16 , thedisplay region 101C includes thesemiconductor layer 142 in addition to thesubstrate 110, theconductive layer 120, thespacer 130, thecolumnar structure 135, thepixel electrode 150, thealignment film 160, thealignment film 170, thecounter electrode 180, thesubstrate 190, and theliquid crystal layer 200. - In the present embodiment, the
semiconductor layer 142 is provided instead of the insulatinglayer 140. Thesemiconductor layer 142 is formed of the same material as thesemiconductor layer 142 described in the second embodiment. Thesemiconductor layer 142 has adoping region 142 a in a portion of acapacitive element 30C that overlaps theconductive layer 120. Thedoping region 142 a has higher conductivity than the other regions of thesemiconductor layer 142. Examples of the material to be doped include phosphorus, boron, and arsenic. The width of thedoping region 142 a is preferably 5 μm or more and 50 μm or less. - By using the present embodiment, in addition to the transfer of charges due to the capacitive coupling between the
conductive layer 120 and thepixel electrode 150 in thecapacitive element 30C, a small amount of charge transfer occurs through thedoping region 142 a. This makes it possible to control the light transmission and light non-transmission of the electrooptical device with higher accuracy. - In the present embodiment, an electrooptical device in which the
columnar structure 135 has a different arrangement will be described. -
FIG. 17 is a top view showing a part of adisplay region 101D. As shown inFIG. 17 , thedisplay region 101D has theconductive layer 120, thespacer 130, acolumnar structure 135D and thepixel electrode 150. - Unlike the
columnar structure 135 of the first embodiment, the distance between thespacer 130 and thecolumnar structure 135D may be different for each spacer. Thecolumnar structure 135D is arranged in the upper left offset from the center in the pixel region Pix. In this case, a distance D135D1 between a spacer 130-1 and thecolumnar structure 135D is smaller than a distance D135D2 between a spacer 130-2 and thecolumnar structure 135D. With such a configuration, there is a difference in how the load is applied when pressed, and the pressing amount (pushing amount) required for the electrical connection between thepixel electrode 150 and thecounter electrode 180 can be adjusted. In this example, thecolumnar structure 135 is offset from the center, so that the required pressing amount is increased as compared with the case where thecolumnar structure 135 is arranged in the center. - In the present embodiment, an electrooptical device in which a plurality of columnar structures is provided in one pixel will be described.
-
FIG. 18 is a top view showing a part of adisplay region 101E. As shown inFIG. 18 , thedisplay region 101E has theconductive layer 120, thespacer 130, acolumnar structure 135E, and thepixel electrode 150. - Unlike the
columnar structure 135 of the first embodiment, a plurality ofcolumnar structures 135E is arranged in one pixel region Pix. In this example, acolumnar structure 135E-1 is arranged in the center of the pixel region Pix, andcolumnar structures 135E-2, 135E-3, 135E-4, 135E-5 are arranged in a region between thespacer 130. With such a configuration, it is possible to reduce the connection resistance between thepixel electrode 150 and thecounter electrode 180. - In the present embodiment, each of the
columnar structures 135E has the same size. However, the invention is not limited thereto. The height of each columnar structure may not be necessarily the same. For example, thecolumnar structure 135E may be higher as thecolumnar structure 135E moves away from the center of the pixel area Pix. When the above configuration is provided, when the shape of one columnar structure has collapsed, it is possible to complement the function by using another columnar structure. Therefore, it is possible to provide a high reliable electrooptical device. - In the present embodiment, an electrooptical device in which the
conductive layer 120 and thepixel electrode 150 overlap differently will be described. -
FIG. 19 is a top view showing a part of adisplay region 101F. As shown inFIG. 19 , thedisplay region 101F includes theconductive layer 120, thespacer 130, thecolumnar structure 135, and apixel electrode 150F. - In
FIG. 19 , anend portion 151F of thepixel electrode 150F is shown by a solid line, and theend portion 121 of theconductive layer 120 is shown by a dotted line. Unlike thepixel electrode 150 of the first embodiment, thepixel electrode 150F has a configuration that does not overlap theconductive layer 120 in an upper side PixU of the pixel region Pix. As a result, the influence on the adjacent pixel region Pix can be minimized. - The configuration in which the
pixel electrode 150F does not overlap theconductive layer 120 is not limited to the above description.FIG. 20 is a top view showing a part of a display region 101F1 which is a modification of thedisplay region 101F. As shown inFIG. 20 , thepixel electrode 150 may have a configuration that does not overlap with theconductive layer 120 at a right side PixR of the pixel region Pix in the display region 101F1. - The configuration in which the
pixel electrode 150 does not overlap theconductive layer 120 is not limited to one side.FIG. 21 is a top view showing a part of a display region 101F2 which is a modification of thedisplay region 101F. As shown inFIG. 21 , in the display region 101F2, thepixel electrode 150 may have a configuration that does not overlap theconductive layer 120 in one direction. Specifically, thepixel electrode 150 may have a configuration that does not overlap theconductive layer 120 in the upper side PixU and the bottom side PixD of the pixel region Pix, that is, in the second direction D2. With this configuration, it is possible to reduce the influence of the potential fluctuation on the adjacent pixels in the second direction D2. -
FIG. 22 is a top view showing a part of a display region 101F3 which is a modification of thedisplay region 101F. As shown inFIG. 22 , the display region 101F3 may have a configuration that does not overlap theconductive layer 120 on the left side PixL and the right side PixR of the pixel region Pix, that is, in the first direction D1. With this configuration, it is possible to reduce the influence of the potential fluctuation on the adjacent pixels in the first direction D1. -
FIG. 23 is a top view showing a part of a display region 101F4 which is a modification of thedisplay region 101F. As shown inFIG. 23 , the display region 101F4 may have a configuration in which thepixel electrode 150 and theconductive layer 120 do not overlap in the region adjacent to the pixel region Pix. Specifically, thepixel electrode 150 may have a configuration that does not overlap theconductive layer 120 on the upper side PixU and the right side PixR of the pixel region Pix. By having this configuration, it is possible to reduce the influence of the potential fluctuation on other pixel regions adjacent to each other on the upper side and the right side of the pixel region Pix. -
FIG. 24 is a top view showing a part of a display region 101F5 which is a modification of thedisplay region 101F. As shown inFIG. 24 , in the display region 101F5, thepixel electrode 150 may have a configuration that does not overlap theconductive layer 120 on the upper side PixU, the bottom side PixD, and the right side PixR of the pixel region Pix. -
FIG. 25 is a top view showing a part of a display region 101F6 which is a modification of thedisplay region 101F. As shown inFIG. 25 , in the display region 101F6, thepixel electrode 150 may have a configuration that does not overlap with theconductive layer 120 on the upper side PixU, the left side PixL, and the right side PixR of the pixel region Pix. - Therefore, by using the present embodiment, the
pixel electrode 150 is configured to overlap theconductive layer 120 in at least a part of the periphery of the pixel region Pix (one side). As a result, the influence of the adjacent pixels, specifically, fluctuation of the potential of theadjacent pixel electrodes 150 can be minimized. - In the first embodiment of the present invention, an example in which the columnar structure is arranged on the first substrate side is shown. However, in the present embodiment, an example in which the columnar structure is arranged on the second substrate side is shown.
-
FIG. 26 is a cross-sectional view between A1-A2 of adisplay region 101G. As shown inFIG. 26 , thedisplay region 101G includes theconductive layer 120, thespacer 130, acolumnar structure 135G, and thepixel electrode 150, thedisplay object 109, thesubstrate 110, the insulatinglayer 140, analignment film 160G, thealignment film 170, thecounter electrode 180, thesubstrate 190, and theliquid crystal layer 200, thepolarizer 210, and thepolarizer 220. InFIG. 26 , unlike thecolumnar structure 135 of the first embodiment, thecolumnar structure 135G is arranged on thefirst surface 190 a side of thesubstrate 190. - The
alignment film 160G is provided on thepixel electrode 150. Thealignment film 160G has the same function and material as thealignment film 160. Thealignment film 160G has an opening 160Ga in a region R160G that overlaps thecolumnar structure 135G so as not to be arranged on an upper surface 135Ga of the columnar structure. A width D160G of the opening 160Ga is wider than a width D135Ga of the upper surface 135Ga of thecolumnar structure 135G. Even when the present embodiment is used, the orientation state of the liquid crystal can be switched by the same effects as those of the first embodiment, that is, by being pressed. Thecolumnar structure 135 is not limited to the present embodiment and may be arranged on both thesubstrate 190 and thesubstrate 110. - In the first embodiment of the present invention, an example in which the display region normally changes from the light non-transmission state to the light transmission state by being pressed is shown. However, the present invention is not limited thereto. For example, the display region may change from the normal light transmission state to the light non-transmission state by being pressed.
- In the first embodiment of the present invention, an example in which the first direction and the second direction are orthogonal to each other is shown. However, the present invention is not limited thereto. For example, the first direction and the second direction may intersect at 45 degrees, 60 degrees, or 120 degrees. In this case, the pixel region Pix is not limited to a square. The pixel region Pix may have a hexagon or octagon shape. By making the pixel region Pixel a polygon shape, it is possible to achieve a display region having high definition. The pixel region Pix may be a shape other than a polygon.
- In the first embodiment, the
conductive layer 120 has the function of a light-shielding film. However, the invention is not limited thereto. The function of the light-shielding film may be achieved by other materials. For example, a black resin material may be used for a portion overlapping thespacer 130 and thecolumnar structure 135. - In the first embodiment of the present invention, a liquid crystal element driven by a TN method is used. However, the present invention is not limited thereto. For example, a light scattering type liquid crystal element may be used. In this case, a polymer dispersed liquid crystal (PDLC) is used as the
liquid crystal layer 200. In this case, it is not necessary to arrange the polarizer. - Within the spirit of the present invention, it is understood that various changes and modifications could be made by those skilled in the art and that these changes and modifications also fall within the scope of the present invention. For example, as long as the gist of the present invention is provided, additions, deletions, or changes to the design of components or additions, omissions, or changes to the conditions of processes to each of the above-described embodiments made a person skilled in the art are included in the scope of the present invention.
Claims (20)
1. An electrooptical device comprising:
a first substrate;
a second substrate opposed to the first substrate;
a plurality of spacers maintaining a distance between the first substrate and the second substrate;
a pixel electrode provided on the first substrate;
a conductive layer provided at a first substrate side of the pixel electrode and overlapping a part of the pixel electrode;
a protrusion provided on the first substrate, protruding toward the second substrate, and covered with the pixel electrode;
a counter electrode provided on the second substrate and opposed to the pixel electrode;
a first alignment film provided on the pixel electrode and having a first opening in a portion overlapping the protrusion;
a second alignment film provided on the counter electrode and having a second opening in a portion overlapping the protrusion; and
a liquid crystal layer provided between the first alignment film and the second alignment film.
2. The electrooptical device according to claim 1 , wherein
some of the plurality of spacers are arranged at a corner of the pixel electrode.
3. The electrooptical device according to claim 1 , wherein
the second opening is wider than the top surface of the protrusion.
4. The electrooptical device according to claim 3 , wherein
when a portion of the second substrate is pressed, the counter electrode is electrically connected to the pixel electrode in a portion opposed to the top surface of the protrusion.
5. The electrooptical device according to claim 1 further comprising:
a second conductive layer provided between the protrusion and the first substrate, and having a light-shielding property,
wherein the conductive layer and the second conductive layer are provided at a same layer.
6. The electrooptical device according to claim 1 further comprising:
an insulating layer provided between the pixel electrode and the conductive layer.
7. The electrooptical device according to claim 6 , wherein
the pixel electrode, the conductive layer, and the insulating layer form a capacitive element,
the pixel electrode is a first capacitive electrode of the capacitive element, and
the conductive layer is a second capacitive electrode of the capacitive element.
8. The electrooptical device according to claim 7 , wherein
the insulating layer has an opening in a part of a region overlapping the pixel electrode and the conductive layer.
9. The electrooptical device according to claim 1 , wherein
the pixel electrode is in a floating state, and
a voltage is not directly applied to the pixel electrode when the pixel electrode and the counter electrode are not electrically connected.
10. The electrooptical device according to claim 1 , wherein
a voltage applied to the conductive layer is lower than a voltage applied to the counter electrode, and a predetermined voltage is applied to the pixel electrode through the conductive layer when the pixel electrode and the counter electrode are not electrically connected.
11. An electrooptical device comprising:
a first substrate;
a second substrate opposed to the first substrate;
a spacer maintaining a distance between the first substrate and the second substrate;
a pixel electrode provided on the first substrate;
a conductive layer provided at a first substrate side of the pixel electrode and overlapping a part of the pixel electrode;
a counter electrode provided on the second substrate;
a protrusion covered with one of the pixel electrode and the counter electrode, the protrusion being provided between the first substrate and the second substrate so that a first distance between a first region of the pixel electrode and the counter electrode is smaller than a second distance between a second region of the pixel electrode and the counter electrode, and overlapping the first region of the pixel electrode in a planar view;
a first alignment film provided on a portion of the pixel electrode;
a second alignment film provided on a portion of the counter electrode; and
a liquid crystal layer provided between the first substrate and the second substrate and in contact with the pixel electrode and the counter electrode in the first region.
12. The electrooptical device according to claim 11 , wherein
the spacer is arranged at a corner of the pixel electrode.
13. The electrooptical device according to claim 11 , wherein
the first alignment film has a first opening in a portion overlapping the protrusion,
the second alignment film has a second opening in a portion overlapping the protrusion, and
the second opening is wider than the top surface of the protrusion.
14. The electrooptical device according to claim 13 , wherein
when a portion of the second substrate is pressed, the counter electrode is electrically connected to the pixel electrode in a portion opposed to the top surface of the protrusion.
15. The electrooptical device according to claim 11 further comprising:
a second conductive layer provided between the protrusion and the first substrate, and having a light-shielding property,
wherein the conductive layer and the second conductive layer are provided at a same layer.
16. The electrooptical device according to claim 11 further comprising:
an insulating layer provided between the pixel electrode and the conductive layer.
17. The electrooptical device according to claim 16 , wherein
the pixel electrode, the conductive layer, and the insulating layer form a capacitive element,
the pixel electrode is a first capacitive electrode of the capacitive element, and
the conductive layer is a second capacitive electrode of the capacitive element.
18. The electrooptical device according to claim 17 , wherein
the insulating layer has an opening in a part of a region overlapping the pixel electrode and the conductive layer.
19. The electrooptical device according to claim 11 , wherein
the pixel electrode is in a floating state, and
a voltage is not directly applied to the pixel electrode when the pixel electrode and the counter electrode are not electrically connected.
20. The electrooptical device according to claim 11 , wherein
a voltage applied to the conductive layer is lower than a voltage applied to the counter electrode, and a predetermined voltage is applied to the pixel electrode through the conductive layer when the pixel electrode and the counter electrode are not electrically connected.
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US17/729,038 US20220252923A1 (en) | 2018-12-04 | 2022-04-26 | Electrooptical device |
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JP2018-227251 | 2018-12-04 | ||
JP2018227251A JP2020091350A (en) | 2018-12-04 | 2018-12-04 | Electro-optical device |
PCT/JP2019/033991 WO2020115961A1 (en) | 2018-12-04 | 2019-08-29 | Electro-optic device |
US17/333,130 US11347114B2 (en) | 2018-12-04 | 2021-05-28 | Electrooptical device utilized for electronic memo pad |
US17/729,038 US20220252923A1 (en) | 2018-12-04 | 2022-04-26 | Electrooptical device |
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US17/333,130 Active US11347114B2 (en) | 2018-12-04 | 2021-05-28 | Electrooptical device utilized for electronic memo pad |
US17/729,038 Abandoned US20220252923A1 (en) | 2018-12-04 | 2022-04-26 | Electrooptical device |
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TWI810913B (en) * | 2022-04-27 | 2023-08-01 | 友達光電股份有限公司 | Display apparatus |
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2019
- 2019-08-29 WO PCT/JP2019/033991 patent/WO2020115961A1/en active Application Filing
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2021
- 2021-05-28 US US17/333,130 patent/US11347114B2/en active Active
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- 2022-04-26 US US17/729,038 patent/US20220252923A1/en not_active Abandoned
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US20090268131A1 (en) * | 2008-04-28 | 2009-10-29 | Au Optronics Corporation | Touch panel, color filter substrate and fabricating method thereof |
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US20210286210A1 (en) | 2021-09-16 |
US11347114B2 (en) | 2022-05-31 |
JP2020091350A (en) | 2020-06-11 |
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