US20220223192A1 - Memory device - Google Patents

Memory device Download PDF

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US20220223192A1
US20220223192A1 US17/147,480 US202117147480A US2022223192A1 US 20220223192 A1 US20220223192 A1 US 20220223192A1 US 202117147480 A US202117147480 A US 202117147480A US 2022223192 A1 US2022223192 A1 US 2022223192A1
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memory device
voltage detector
control signal
coupled
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US11380385B1 (en
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Ting-Shuo Hsu
Chih-Wei Shen
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Nanya Technology Corp
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Nanya Technology Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/225—Clock input buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/105—Aspects related to pads, pins or terminals

Definitions

  • the present disclosure relates to a memory device. More particularly, the present disclosure relates to a memory device having different voltage detectors to control ranks of a memory device.
  • a dynamic random access memory In current memory device, a dynamic random access memory (DRAM) includes 2 to 8 ranks. Each of ranks will be enable by a control signal, and all ranks are in an enable state. It causes more power consumption in un-work rank of the DRAM.
  • DRAM dynamic random access memory
  • the memory device includes an input pad, a first rank, a second rank, a first voltage detector, and a second voltage detector.
  • the input pad is configured to receive an input voltage.
  • the first voltage detector is coupled to the input pad, the first voltage detector is configured to receive the input voltage, and the first voltage detector is configured to transmit the input voltage to the first rank.
  • the second voltage detector is coupled to the first voltage detector through a first through-silicon via, the second voltage detector is configured to receive the input voltage, and the second voltage detector is configured to transmit the input voltage to the second rank according to a control signal transmitted from the first voltage detector through the first voltage detector, so as to decide a state of the second rank.
  • FIG. 1 depicts a schematic diagram of a memory device according to one embodiment of the present disclosure.
  • FIG. 2 depicts a schematic diagram of a voltage detector of the memory device shown in FIG. 1 according to one embodiment of the present disclosure.
  • FIG. 1 depicts a schematic diagram of a memory device according to one embodiment of the present disclosure.
  • the memory device 1000 includes an input pad 1100 , a first rank 1200 , a second rank 1300 , a first voltage detector 1210 , and a second voltage detector 1310 .
  • the memory device 1000 includes a dynamic random access memory (DRAM).
  • DRAM dynamic random access memory
  • the input pad 1100 is configured to receive an input voltage.
  • the first voltage detector 1210 is coupled to the input pad 1100 .
  • the first voltage detector 1210 is configured to receive the input voltage, and transmit the input voltage to the first rank 1200 .
  • the second voltage detector 1310 is coupled to the first voltage detector 1210 through a first through-silicon via 1400 .
  • the second voltage detector 1310 is configured to receive the input voltage, and transmit the input voltage to the second rank 1300 according to a control signal transmitted from the first voltage detector 1210 through the first voltage detector 1210 , so as to decide a state of the second rank 1300 .
  • the first rank 1200 is a master rank, and is always in an enable state.
  • the second rank 1300 is a slave rank.
  • the first rank 1200 and the second rank 1300 are located in different layers of the memory device 1000 .
  • the memory device 1000 includes other slave ranks, for example, a third rank 1600 and a forth rank 1700 .
  • the structure and the function of the third rank 1600 and a forth rank 1700 are the same as that of the second rank 1300 .
  • the memory device 1000 further includes a first logic gate 1220 and a second logic gate 1320 .
  • the first logic gate 1220 is coupled between the first voltage detector 1210 and the first rank 1200 .
  • the second logic gate 1320 is coupled between the second voltage detector 1310 and the second rank 1300 , and is coupled to the first logic gate 1220 through a second through-silicon via 1500 .
  • the second logic gate 1320 is configured to receive a clock signal Clk from the second through-silicon via 1500 to drive the second rank 1300 in an enable state.
  • the memory device 1000 further includes the third logic gate 1620 and the forth logic gate 1720 .
  • the first logic gate 1220 , the second logic gate 1320 , the third logic gate 1620 , and the forth logic gate 1720 are coupled together through the second through-silicon via 1500 .
  • the structure and the function the first logic gate 1220 , the second logic gate 1320 , the third logic gate 1620 , and the forth logic gate 1720 are all the same.
  • each of the first logic gate 1220 and the second logic gate 1320 includes at least one of logical NOR gate, logical OR gate, and logical AND gate.
  • the first logic gate 1220 and the second logic gate 1320 receive and decode a command from a DRAM controller (not shown in figure).
  • the first through-silicon via 1400 is perpendicular to the first rank 1200
  • the second through-silicon via 1500 is perpendicular to the second rank 1300 .
  • the first through-silicon via 1400 includes two first through-silicon vias, for example, a first through-silicon via 1410 and a first through-silicon via 1420 .
  • FIG. 2 depicts a schematic diagram of a voltage detector of the memory device shown in FIG. 1 according to one embodiment of the present disclosure.
  • the voltage detector 1210 shown in FIG. 2 is corresponding to the first voltage detector 1210 shown in FIG. 1 .
  • the first voltage detector 1210 , the second voltage detector 1310 , the third voltage detector 1610 , and the forth voltage detector 1710 are coupled together through the first through-silicon via 1400 .
  • the structure and the function of the first voltage detector 1210 , the second voltage detector 1310 , the third voltage detector 1610 , and the forth voltage detector 1710 are all the same.
  • each of voltage detectors includes a first transistor M 1 , a second transistor M 2 , a third transistor M 3 , a forth transistor M 4 , a fifth transistor M 5 , a first resistor R 1 , a second resistor R 2 , a third resistor R 3 , and a forth resistor R 4 .
  • each of the first transistor M 1 , the second transistor M 2 , the third transistor M 3 , the forth transistor M 4 , and the fifth transistor M 5 is PMOS or NMOS.
  • the first transistor M 1 and the fifth transistor M 5 are PMOS.
  • the second transistor M 2 , the third transistor M 3 , and forth transistor M 4 are NMOS.
  • the third resistor R 3 and the forth resistor R 4 are the same kind of resistor, but resistance values of the third resistor R 3 and the forth resistor R 4 are different.
  • the control signal includes a first control signal S 1 and a second control signal S 2 .
  • the first transistor M 1 is coupled to one of the first through-silicon vias, for example, the first through-silicon via 1410 shown in FIG. 1 , and the first transistor M 1 is configured to receive the first control signal S 1 .
  • the second transistor M 2 is coupled to the other one of the first through-silicon vias, for example, the first through-silicon via 1420 shown in FIG. 1 , and the second transistor M 2 is configured to receive the second control signal S 2 .
  • the second voltage detector 1310 decides whether the second rank 1300 is in an enable or a disable state according the first control signal S 1 and the second control signal S 2 .
  • the forth rank 1700 is in an enable state.
  • the input voltage Vin at the high electrical potential is 4V (volt).
  • the third rank 1600 is in an enable state.
  • the input voltage Vin at the middle electrical potential is 3V.
  • the second rank 1300 is in an enable state.
  • the input voltage Vin at the low electrical potential is 2V.
  • the present disclosure provides the memory device 1000 to improve problems of power consumption in memory devices.

Abstract

A memory device includes an input pad, a first rank, a second rank, a first voltage detector, and a second voltage detector. The input pad is configured to receive an input voltage. The first voltage detector is coupled to the input pad, the first voltage detector is configured to receive the input voltage, and the first voltage detector is configured to transmit the input voltage to the first rank. The second voltage detector is coupled to the first voltage detector through a first through-silicon via, the second voltage detector is configured to receive the input voltage, and the second voltage detector is configured to transmit the input voltage to the second rank according to a control signal transmitted from the first voltage detector through the first voltage detector, so as to decide a state of the second rank.

Description

    BACKGROUND Field of Invention
  • The present disclosure relates to a memory device. More particularly, the present disclosure relates to a memory device having different voltage detectors to control ranks of a memory device.
    • Description of Related Art
  • In current memory device, a dynamic random access memory (DRAM) includes 2 to 8 ranks. Each of ranks will be enable by a control signal, and all ranks are in an enable state. It causes more power consumption in un-work rank of the DRAM.
  • For the foregoing reason, there is a need to provide some other suitable control structure of the memory device to solve the problems of the prior art.
    • SUMMARY
  • One aspect of the present disclosure provides a memory device. The memory device includes an input pad, a first rank, a second rank, a first voltage detector, and a second voltage detector. The input pad is configured to receive an input voltage. The first voltage detector is coupled to the input pad, the first voltage detector is configured to receive the input voltage, and the first voltage detector is configured to transmit the input voltage to the first rank. The second voltage detector is coupled to the first voltage detector through a first through-silicon via, the second voltage detector is configured to receive the input voltage, and the second voltage detector is configured to transmit the input voltage to the second rank according to a control signal transmitted from the first voltage detector through the first voltage detector, so as to decide a state of the second rank.
  • These and other aspects of the present disclosure will become apparent from the following description of the preferred embodiment taken in conjunction with the following drawings, although variations and modifications therein may be effected without departing from the spirit and scope of the novel concepts of the disclosure.
  • It is to be understood that both the foregoing general description and the following detailed description are by examples, and are intended to provide further explanation of the present disclosure as claimed.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention can be more fully understood by reading the following detailed description of the embodiment, with reference made to the accompanying drawings as follows:
  • FIG. 1 depicts a schematic diagram of a memory device according to one embodiment of the present disclosure; and
  • FIG. 2 depicts a schematic diagram of a voltage detector of the memory device shown in FIG. 1 according to one embodiment of the present disclosure.
    •  DETAILED DESCRIPTION
  • Reference will now be made in detail to the present embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
  • FIG. 1 depicts a schematic diagram of a memory device according to one embodiment of the present disclosure. In some embodiments, please refer to FIG. 1, the memory device 1000 includes an input pad 1100, a first rank 1200, a second rank 1300, a first voltage detector 1210, and a second voltage detector 1310. In another embodiment, the memory device 1000 includes a dynamic random access memory (DRAM).
  • In some embodiments, the input pad 1100 is configured to receive an input voltage. The first voltage detector 1210 is coupled to the input pad 1100. The first voltage detector 1210 is configured to receive the input voltage, and transmit the input voltage to the first rank 1200. The second voltage detector 1310 is coupled to the first voltage detector 1210 through a first through-silicon via 1400. The second voltage detector 1310 is configured to receive the input voltage, and transmit the input voltage to the second rank 1300 according to a control signal transmitted from the first voltage detector 1210 through the first voltage detector 1210, so as to decide a state of the second rank 1300.
  • In some embodiments, the first rank 1200 is a master rank, and is always in an enable state. The second rank 1300 is a slave rank. In some embodiments, the first rank 1200 and the second rank 1300 are located in different layers of the memory device 1000.
  • In some embodiments, the memory device 1000 includes other slave ranks, for example, a third rank 1600 and a forth rank 1700. The structure and the function of the third rank 1600 and a forth rank 1700 are the same as that of the second rank 1300.
  • In some embodiments, the memory device 1000 further includes a first logic gate 1220 and a second logic gate 1320. The first logic gate 1220 is coupled between the first voltage detector 1210 and the first rank 1200. The second logic gate 1320 is coupled between the second voltage detector 1310 and the second rank 1300, and is coupled to the first logic gate 1220 through a second through-silicon via 1500. The second logic gate 1320 is configured to receive a clock signal Clk from the second through-silicon via 1500 to drive the second rank 1300 in an enable state. In some embodiments, the memory device 1000 further includes the third logic gate 1620 and the forth logic gate 1720. The first logic gate 1220, the second logic gate 1320, the third logic gate 1620, and the forth logic gate 1720 are coupled together through the second through-silicon via 1500. The structure and the function the first logic gate 1220, the second logic gate 1320, the third logic gate 1620, and the forth logic gate 1720 are all the same.
  • In some embodiments, please refer to FIG. 1, each of the first logic gate 1220 and the second logic gate 1320 includes at least one of logical NOR gate, logical OR gate, and logical AND gate. The first logic gate 1220 and the second logic gate 1320 receive and decode a command from a DRAM controller (not shown in figure).
  • In some embodiments, the first through-silicon via 1400 is perpendicular to the first rank 1200, and the second through-silicon via 1500 is perpendicular to the second rank 1300.
  • In some embodiments, the first through-silicon via 1400 includes two first through-silicon vias, for example, a first through-silicon via 1410 and a first through-silicon via 1420.
  • FIG. 2 depicts a schematic diagram of a voltage detector of the memory device shown in FIG. 1 according to one embodiment of the present disclosure. In some embodiments, please refer to FIG. 1 to FIG. 2, the voltage detector 1210 shown in FIG. 2 is corresponding to the first voltage detector 1210 shown in FIG. 1. The first voltage detector 1210, the second voltage detector 1310, the third voltage detector 1610, and the forth voltage detector 1710 are coupled together through the first through-silicon via 1400. The structure and the function of the first voltage detector 1210, the second voltage detector 1310, the third voltage detector 1610, and the forth voltage detector 1710 are all the same.
  • In some embodiments, each of voltage detectors includes a first transistor M1, a second transistor M2, a third transistor M3, a forth transistor M4, a fifth transistor M5, a first resistor R1, a second resistor R2, a third resistor R3, and a forth resistor R4. In some embodiments, each of the first transistor M1, the second transistor M2, the third transistor M3, the forth transistor M4, and the fifth transistor M5 is PMOS or NMOS. For example, the first transistor M1 and the fifth transistor M5 are PMOS. The second transistor M2, the third transistor M3, and forth transistor M4 are NMOS. The third resistor R3 and the forth resistor R4 are the same kind of resistor, but resistance values of the third resistor R3 and the forth resistor R4 are different.
  • In some embodiments, the control signal includes a first control signal S1 and a second control signal S2. The first transistor M1 is coupled to one of the first through-silicon vias, for example, the first through-silicon via 1410 shown in FIG. 1, and the first transistor M1 is configured to receive the first control signal S1. The second transistor M2 is coupled to the other one of the first through-silicon vias, for example, the first through-silicon via 1420 shown in FIG. 1, and the second transistor M2 is configured to receive the second control signal S2. Referring to FIG. 1 and FIG. 2, the second voltage detector 1310 decides whether the second rank 1300 is in an enable or a disable state according the first control signal S1 and the second control signal S2.
  • In some embodiments, please refer to FIG. 1 to FIG. 2, if each of the first control signal S1 and the second control signal S2 is at a low electrical potential, and the input voltage Vin is at a high electrical potential, the forth rank 1700 is in an enable state. In some embodiments, the input voltage Vin at the high electrical potential is 4V (volt).
  • In some embodiments, please refer to FIG. 1 to FIG. 2, if the first control signal S1 is at a high electrical potential, the second control signal S2 is at a low electrical potential, and the input voltage Vin is at a middle electrical potential, the third rank 1600 is in an enable state. In some embodiments, the input voltage Vin at the middle electrical potential is 3V.
  • In some embodiments, please refer to FIG. 1 to FIG. 2, if each of the first control signal S1 and the second control signal S2 is at a high electrical potential, and the input voltage Vin is at a low electrical potential, the second rank 1300 is in an enable state. In some embodiments, the input voltage Vin at the low electrical potential is 2V.
  • Based on the above embodiments, the present disclosure provides the memory device 1000 to improve problems of power consumption in memory devices.
  • It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims.

Claims (16)

1. A memory device, comprising:
an input pad, configured to receive an input voltage;
a first rank;
a second rank;
a first voltage detector, disposed in the first rank, coupled to the input pad, configured to receive the input voltage, and configured to transmit the input voltage to the first rank;
a second voltage detector, disposed in the second rank, coupled to the first voltage detector through a first through-silicon via, and configured to receive the input voltage, and configured to transmit the input voltage to the second rank according to a control signal transmitted from the first voltage detector through the first voltage detector, so as to decide a state of the second rank, wherein the first rank and the second rank are located in different layers of the memory device, wherein the first rank is in an enable state;
a first logic gate, coupled between the first voltage detector and the first rank; and
a second logic gate, coupled between the second voltage detector and the second rank, and coupled to the first logic gate through a second through-silicon via, wherein the second logic gate is configured to receive a clock signal from the second through-silicon via to drive the second rank in an enable state.
2. The memory device of claim 1, wherein the memory device comprises a dynamic random access memory (DRAM).
3. (canceled)
4. (canceled)
5. (canceled)
6. The memory device of claim 1, wherein the first logic gate is coupled to the second logic gate through the second through-silicon via.
7. The memory device of claim 1, wherein each of the first logic gate and the second logic gate comprises at least one of logical NOR gate, logical OR gate, and logical AND gate.
8. The memory device of claim 1, wherein the first through-silicon via is perpendicular to the first rank, wherein the second through-silicon via is perpendicular to the second rank.
9. The memory device of claim 1, wherein the first through-silicon via comprises two first through-silicon vias, wherein the control signal comprises a first control signal and a second control signal, wherein the second voltage detector comprises:
a first transistor, coupled to one of the first through-silicon vias, and configured to receive the first control signal; and
a second transistor, coupled to the other one of the first through-silicon vias, and configured to receive the second control signal;
wherein the second voltage detector decides whether the second rank is in an enable or a disable state according the first control signal and the second control signal.
10. The memory device of claim 9, wherein if each of the first control signal and the second control signal is at a high electrical potential, and the input voltage is at a low electrical potential, the second rank is in an enable state.
11. The memory device of claim 10, wherein the first rank is a master rank, wherein the second rank is a slave rank controlled by the first rank.
12. The memory device of claim 11, further comprising:
a third rank;
a fourth rank;
a third voltage detector, disposed in the third rank, and coupled to the first through-silicon via; and
a fourth voltage detector, disposed in the fourth rank, and coupled to the first through-silicon via.
13. The memory device of claim 12, wherein each of the second rank, the third rank, and the fourth rank is controlled by the first rank.
14. The memory device of claim 12, wherein each of the first rank, the second rank, the third rank, and the fourth rank is located in different layers of the memory device.
15. The memory device of claim 13, wherein if each of the first control signal and the second control signal is at a low electrical potential, and the input voltage is at a high electrical potential, the fourth rank is in an enable state.
16. The memory device of claim 13, wherein if the first control signal and is at a high electrical potential, the second control signal is at a low electrical potential, and the input voltage is at a middle electrical potential, the third rank is in an enable state.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160343441A1 (en) * 2015-05-21 2016-11-24 Kabushiki Kaisha Toshiba Semiconductor device with control of maximum value of current capable of being supplied

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WO2020063720A1 (en) * 2018-09-27 2020-04-02 Changxin Memory Technologies, Inc. Power supply system and semiconductor package assembly

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160343441A1 (en) * 2015-05-21 2016-11-24 Kabushiki Kaisha Toshiba Semiconductor device with control of maximum value of current capable of being supplied

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