US20220196913A1 - Ring-Geometry Photodetector Designs For High-Sensitivity And High-Speed Detection Of Optical Signals For Fiber Optic And Integrated Optoelectronic Devices - Google Patents
Ring-Geometry Photodetector Designs For High-Sensitivity And High-Speed Detection Of Optical Signals For Fiber Optic And Integrated Optoelectronic Devices Download PDFInfo
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/241—Light guide terminations
- G02B6/243—Light guide terminations as light absorbers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/264—Optical coupling means with optical elements between opposed fibre ends which perform a function other than beam splitting
- G02B6/266—Optical coupling means with optical elements between opposed fibre ends which perform a function other than beam splitting the optical element being an attenuator
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/29331—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by evanescent wave coupling
- G02B6/29335—Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity
- G02B6/29338—Loop resonators
Definitions
- This invention pertains to the field of photodetectors. More particularly, the invention pertains to novel designs for high-sensitivity, high-speed photodetectors.
- an important component of the system is the photodetector, which converts an optical signal to an electrical signal.
- the photodetector which converts an optical signal to an electrical signal.
- junction capacitance and photocarrier drift time need to be minimized for fast response, while absorbance needs to be maximized for high sensitivity.
- photodiode design compromises are made in current designs.
- a typical photodetector is comprised of a junction of p-type and n-type semiconductors, where the free electrons and empty electron states (holes) combine and create a depletion zone of high electrical field. Photons absorbed in this zone generate free electrons and holes, which are moved apart rapidly in the electrical field. Once the electrons and holes leave the depletion zone, a current is detected. Photocarrier drift time describes how long the generated holes (electrons move faster and are not the limiting factor) take to leave the depletion zone. This time can be calculated with the formula of
- junction capacitance C dep is given by the formula
- a very fast photodetector must have a very thin active region (small width of the depletion zone) to minimize drift times.
- the thin active region also needs to occupy a very small area to minimize the capacitance of the junction, which is the other primary limiting factor on how rapidly the signal can be generated by the photodetector.
- This extremely small and thin photodetector cannot absorb much of the light impinging on it perpendicular to the p-n junction plane. Most of the incident light will pass through, reducing the detection efficiency.
- a very sensitive photodetector requires either a thick depletion zone, which will extend the time for carriers to exit the depletion zone, or a thin depletion zone that is very large, where the capacitance of the junction will limit the speed of detectable signal.
- WGPD waveguide photodetector
- the present invention provides a semiconductor photodetector comprising a closed loop configured to receive light from an external source adapted to trap light within said closed loop until absorption by the semiconductor.
- the present invention provides semiconductor photodetector comprising a closed loop configured to receive light from an external source to trap light within the closed loop and recirculate the light until absorption by the semiconductor.
- the present invention provides semiconductor photodetector wherein the closed loop recirculates light received from an external source until all light is absorbed by the semiconductor.
- the present invention provides semiconductor photodetector wherein the closed loop is a ring.
- the present invention provides semiconductor photodetector wherein light is captured and re-circulated in the photodetector using a curved ridge-waveguide ring resonator.
- the present invention provides semiconductor photodetector wherein light is captured and re-circulated in the photodetector using straight waveguides and mirrors.
- the present invention provides semiconductor photodetector wherein light is captured and re-circulated in the photodetector using straight waveguides and mirrors that redirect light into the closed loop.
- the present invention provides semiconductor photodetector wherein light is captured and re-circulated in the photodetector using a photonic crystal structure.
- the present invention provides a method capturing light in a semiconductor photodetector comprising the following steps: directing light into a closed loop; and trapping light from an external source within said closed loop and recirculating light in the closed loop until absorption by the semiconductor.
- FIG. 1A shows a waveguide bending photodetector design for an embodiment of the present invention.
- FIG. 1B shows a total internal reflection mirrors photodetector design for an embodiment of the present invention.
- FIG. 1C shows a photonic crystal design for an embodiment of the present invention.
- the embodiments of the present invention concern designs that avoid these trade-offs by providing a compact, efficient and high-bandwidth ring photodetector.
- Preferred embodiments include three related photodetector designs using the total internal reflection waveguiding in FIG. 1 a, the mirror reflection in FIG. 1 b, or the photonic crystal guiding in FIG. 1 c.
- a common feature of the embodiments of the present invention is the entry point for light of that may be a whistle-geometry ring photodetector (WRP).
- WRP whistle-geometry ring photodetector
- a ridge waveguide 1 a, 1 b, as shown in FIGS. 1 a and 1 b, or a photonic crystal guiding structure 1 c, as shown in FIG. 1 c, collects light, either from an optical fiber, lens, or other part of a larger integrated optoelectronic device and guides it to the ring photodetector. The light is guided to a non-symmetrical Y-junction, which is shown in FIGS.
- FIG. 1 a -1 c as parts 2 a, 2 b and 2 c, injecting the light into the absorptive part of the photodetector.
- the Y-junction allows the light to enter the unidirectional sections 3 a, 3 b and 3 c which define a continuous path or ring such as a circle, rectangle, hexagonal as well as other designs such as oval, elliptical, and others, of the photodetector, where it can circulate until it is fully absorbed.
- the path of the light is shown as 4 a, 4 b, and 4 c for the three embodiments shown in FIGS. 1 a - 1 c. While the design in FIG. 1 a re-circulates light by bending the waveguide, FIG. 1 b uses strategically placed plurality of mirrors, labeled as 5 b, to induce mirror reflection for keeping the light recirculating.
- the absorptive depletion zone area may be engineered to be very thin in order to minimize drift time, and even though the absorption per unit length is low, the re-circulation of the light within the ring or continuous path means that all of the light will eventually be absorbed.
- the ring or continuous path can be made extremely small (1 ⁇ m in diameter or less), minimizing the area of the diode junction, which minimizes both the capacitance and the physical footprint for an integrated optoelectronic device for very large-scale integration (VLSI), where footprint size of devices is a limiting factor.
- VLSI very large-scale integration
- unidirectional sections 3 a, 3 b and 3 c define a ring or continuous path 4 a - 4 c which are of a length that causes the light to re-circulate multiple times while the light is absorbed.
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- Physics & Mathematics (AREA)
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Abstract
A semiconductor photodetector comprising a closed loop configured to receive light from an external source adapted to trap light within said closed loop until absorption by the semiconductor.
Description
- This application claims priority to U.S. Provisional Application No. 63/128608, filed on Dec. 21, 2020, which is incorporated herein in its entirety.
- This invention was made with government support by the Office of Naval Research under Grant No. N00014-17-1-2416. The government has certain rights in the invention.
- Not applicable.
- This invention pertains to the field of photodetectors. More particularly, the invention pertains to novel designs for high-sensitivity, high-speed photodetectors.
- In many applications, including optical telecommunications, an important component of the system is the photodetector, which converts an optical signal to an electrical signal. To provide a fast and sensitive photodetector, there are several parameters that need to be optimized. Junction capacitance and photocarrier drift time need to be minimized for fast response, while absorbance needs to be maximized for high sensitivity. To achieve these two competing goals, photodiode design compromises are made in current designs.
- A typical photodetector is comprised of a junction of p-type and n-type semiconductors, where the free electrons and empty electron states (holes) combine and create a depletion zone of high electrical field. Photons absorbed in this zone generate free electrons and holes, which are moved apart rapidly in the electrical field. Once the electrons and holes leave the depletion zone, a current is detected. Photocarrier drift time describes how long the generated holes (electrons move faster and are not the limiting factor) take to leave the depletion zone. This time can be calculated with the formula of
-
- where W is the width of the depletion zone and vh is the hole velocity [Kasap 2013].
- Charged dopants in the depletion zone create a high electrical field. The junction capacitance Cdep is given by the formula
-
- where A is the area of the photodetector and ε0εr is the electrical permittivity of the material used. Finally, since photons need to be absorbed in the depletion zone, the absorbance is governed by the equation I(x)=I0 exp(−αx), where I0 is the incoming light intensity, α is the absorption coefficient that is dependent on material and wavelength, and x is the distance into the material.
- Taken together, a very fast photodetector must have a very thin active region (small width of the depletion zone) to minimize drift times. The thin active region also needs to occupy a very small area to minimize the capacitance of the junction, which is the other primary limiting factor on how rapidly the signal can be generated by the photodetector. This extremely small and thin photodetector cannot absorb much of the light impinging on it perpendicular to the p-n junction plane. Most of the incident light will pass through, reducing the detection efficiency. By the same token, a very sensitive photodetector requires either a thick depletion zone, which will extend the time for carriers to exit the depletion zone, or a thin depletion zone that is very large, where the capacitance of the junction will limit the speed of detectable signal.
- An alternative design is a long, thin photodetector, with a small junction area, called a waveguide photodetector (WGPD). Light in this case is impinging along the waveguide axis, in the p-n junction plane. WGPDs can be used to mitigate the problems described above. A bandwidth of over 100 GHz and a quantum efficiency of 50% have been realized [Kato 1999]. Even with these extremely fast photodetectors, there are also issues with nonlinear absorption of the light down the length of the photodetector that put limits on dynamic range and degrade performance in digital communication [Williams 1996].
- In one embodiment, the present invention provides a semiconductor photodetector comprising a closed loop configured to receive light from an external source adapted to trap light within said closed loop until absorption by the semiconductor.
- In other embodiments, the present invention provides semiconductor photodetector comprising a closed loop configured to receive light from an external source to trap light within the closed loop and recirculate the light until absorption by the semiconductor.
- In other embodiments, the present invention provides semiconductor photodetector wherein the closed loop recirculates light received from an external source until all light is absorbed by the semiconductor.
- In other embodiments, the present invention provides semiconductor photodetector wherein the closed loop is a ring.
- In other embodiments, the present invention provides semiconductor photodetector wherein light is captured and re-circulated in the photodetector using a curved ridge-waveguide ring resonator.
- In other embodiments, the present invention provides semiconductor photodetector wherein light is captured and re-circulated in the photodetector using straight waveguides and mirrors.
- In other embodiments, the present invention provides semiconductor photodetector wherein light is captured and re-circulated in the photodetector using straight waveguides and mirrors that redirect light into the closed loop.
- In other embodiments, the present invention provides semiconductor photodetector wherein light is captured and re-circulated in the photodetector using a photonic crystal structure.
- In other embodiments, the present invention provides a method capturing light in a semiconductor photodetector comprising the following steps: directing light into a closed loop; and trapping light from an external source within said closed loop and recirculating light in the closed loop until absorption by the semiconductor.
- Additional objects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
- In the drawings, which are not necessarily drawn to scale, like numerals may describe substantially similar components throughout the several views. Like numerals having different letter suffixes may represent different instances of substantially similar components. The drawings illustrate generally, by way of example, but not by way of limitation, a detailed description of certain embodiments discussed in the present document.
-
FIG. 1A shows a waveguide bending photodetector design for an embodiment of the present invention. -
FIG. 1B shows a total internal reflection mirrors photodetector design for an embodiment of the present invention. -
FIG. 1C shows a photonic crystal design for an embodiment of the present invention. - Detailed embodiments of the present invention are disclosed herein; however, it is to be understood that the disclosed embodiments are merely exemplary of the invention, which may be embodied in various forms. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a representative basis for teaching one skilled in the art to variously employ the present invention in virtually any appropriately detailed method, structure or system. Further, the terms and phrases used herein are not intended to be limiting, but rather to provide an understandable description of the invention.
- As described above, there are fundamental limits in the physics of photodetectors that have forced trade-offs of either sensitivity or frequency response with current photodetector designs. In one aspect, the embodiments of the present invention concern designs that avoid these trade-offs by providing a compact, efficient and high-bandwidth ring photodetector. Preferred embodiments include three related photodetector designs using the total internal reflection waveguiding in
FIG. 1 a, the mirror reflection inFIG. 1 b, or the photonic crystal guiding inFIG. 1 c. - A common feature of the embodiments of the present invention is the entry point for light of that may be a whistle-geometry ring photodetector (WRP). A
ridge waveguide FIGS. 1a and 1 b, or a photoniccrystal guiding structure 1 c, as shown inFIG. 1 c, collects light, either from an optical fiber, lens, or other part of a larger integrated optoelectronic device and guides it to the ring photodetector. The light is guided to a non-symmetrical Y-junction, which is shown inFIGS. 1a-1c asparts unidirectional sections FIGS. 1a -1 c. While the design inFIG. 1a re-circulates light by bending the waveguide,FIG. 1b uses strategically placed plurality of mirrors, labeled as 5 b, to induce mirror reflection for keeping the light recirculating. - With the ring or continuous path designs of
FIG. 1a -c, the absorptive depletion zone area may be engineered to be very thin in order to minimize drift time, and even though the absorption per unit length is low, the re-circulation of the light within the ring or continuous path means that all of the light will eventually be absorbed. The ring or continuous path can be made extremely small (1 μm in diameter or less), minimizing the area of the diode junction, which minimizes both the capacitance and the physical footprint for an integrated optoelectronic device for very large-scale integration (VLSI), where footprint size of devices is a limiting factor. - In other embodiments,
unidirectional sections - While the foregoing written description enables one of ordinary skill to make and use what is considered presently to be the best mode thereof, those of ordinary skill will understand and appreciate the existence of variations, combinations, and equivalents of the specific embodiment, method, and examples herein. The disclosure should therefore not be limited by the above described embodiments, methods, and examples, but by all embodiments and methods within the scope and spirit of the disclosure.
Claims (16)
1. A semiconductor photodetector comprising: a closed loop, said closed loop configured to receive light from an external source; and said closed loop adapted to trap light within said closed loop until absorption by the semiconductor.
2. The semiconductor photodetector of claim 1 wherein said closed loop recirculates light received from an external source.
3. The semiconductor photodetector of claim 1 wherein said closed loop recirculates light received from an external source until all light is absorbed by the semiconductor.
4. The semiconductor photodetector of claim 1 wherein said closed loop is a ring
5. The semiconductor photodetector of claim 1 wherein light is captured and re-circulated in the photodetector using a curved ridge-waveguide ring resonator.
6. The semiconductor photodetector of claim 1 wherein light is captured and re-circulated in the photodetector using straight waveguides and mirrors.
7. The semiconductor photodetector of claim 1 wherein light is captured and re-circulated in the photodetector using straight waveguides and mirrors, said waveguides and mirrors redirecting light into said closed loop.
8. The semiconductor photodetector of claim 1 wherein light is captured and re-circulated in the photodetector using a photonic crystal structure.
9. A method capturing light in a semiconductor photodetector comprising the following steps: directing light into a closed loop; and trapping light from an external source within said closed loop until absorption by the semiconductor.
10. The method of claim 9 further comprising the step of recirculating light received from an external source in said closed loop until absorption by the semiconductor.
11. The method of claim 10 wherein said light is recirculated until all light from an external source is absorbed by the semiconductor.
12. The method of claim 10 wherein said closed loop is a ring
13. The method of claim 10 wherein light is captured and re-circulated in the photodetector using a curved ridge-waveguide ring resonator.
14. The method of claim 10 wherein light is captured and re-circulated in the photodetector using straight waveguides and mirrors.
15. The method of claim 10 wherein light is captured and re-circulated in the photodetector using straight waveguides and mirrors, said waveguides and mirrors redirecting light into said closed loop.
16. The method of claim 10 using a photonic crystal structure.
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US17/558,468 US20220196913A1 (en) | 2020-12-21 | 2021-12-21 | Ring-Geometry Photodetector Designs For High-Sensitivity And High-Speed Detection Of Optical Signals For Fiber Optic And Integrated Optoelectronic Devices |
US18/472,183 US20240012201A1 (en) | 2020-12-21 | 2023-09-21 | Ring-Geometry Photodetector Designs For High-Sensitivity And High-Speed Detection Of Optical Signals For Fiber Optic And Integrated Optoelectronic Devices |
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