US20220123194A1 - High Temperature Superconducting Device - Google Patents
High Temperature Superconducting Device Download PDFInfo
- Publication number
- US20220123194A1 US20220123194A1 US17/170,584 US202117170584A US2022123194A1 US 20220123194 A1 US20220123194 A1 US 20220123194A1 US 202117170584 A US202117170584 A US 202117170584A US 2022123194 A1 US2022123194 A1 US 2022123194A1
- Authority
- US
- United States
- Prior art keywords
- plane
- superconducting
- separation
- planes
- determining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 claims abstract description 57
- 238000000926 separation method Methods 0.000 claims description 62
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 125000004429 atom Chemical group 0.000 claims description 17
- 229910002804 graphite Inorganic materials 0.000 claims description 13
- 239000010439 graphite Substances 0.000 claims description 13
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 238000009830 intercalation Methods 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- 229910052778 Plutonium Inorganic materials 0.000 claims description 3
- 229910052770 Uranium Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 238000005034 decoration Methods 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 239000010410 layer Substances 0.000 description 32
- 230000005404 monopole Effects 0.000 description 22
- 230000007704 transition Effects 0.000 description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- 239000011575 calcium Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000002887 superconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 230000006399 behavior Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- -1 transition metals nitrides Chemical class 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000750 Niobium-germanium Inorganic materials 0.000 description 1
- 229910001275 Niobium-titanium Inorganic materials 0.000 description 1
- PZKRHHZKOQZHIO-UHFFFAOYSA-N [B].[B].[Mg] Chemical compound [B].[B].[Mg] PZKRHHZKOQZHIO-UHFFFAOYSA-N 0.000 description 1
- OSOKRZIXBNTTJX-UHFFFAOYSA-N [O].[Ca].[Cu].[Sr].[Bi] Chemical class [O].[Ca].[Cu].[Sr].[Bi] OSOKRZIXBNTTJX-UHFFFAOYSA-N 0.000 description 1
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000004078 cryogenic material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- RTRWPDUMRZBWHZ-UHFFFAOYSA-N germanium niobium Chemical compound [Ge].[Nb] RTRWPDUMRZBWHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RJSRQTFBFAJJIL-UHFFFAOYSA-N niobium titanium Chemical compound [Ti].[Nb] RJSRQTFBFAJJIL-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
- H10N60/858—Ceramic superconductors comprising copper oxide having multilayered structures, e.g. superlattices
-
- H01L39/128—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/06—Films or wires on bases or cores
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Definitions
- Embodiments of the present invention are related superconducting devices.
- alloys e.g., niobium-titanium, germanium-niobium, and niobium nitride
- ceramics and crystalline cuprates bismuth strontium calcium copper oxides, yttrium barium copper oxide, and others, or magnesium diboride
- superconducting pnictides e.g., fluorine-doped LaOFeAs
- organics e.g., fullerenes and carbon nanotubes
- van der Waals devices having two or more two-dimensional layered materials, for example conducting planes like graphene
- a superconducting structure is presented.
- the superconducting structure includes a first plane of material; a second plane of material; and a separating medium positioned between the first plane and the second plane, wherein a superconducting critical temperature of the superconducting structure is adjusted by control of one or more parameters.
- a method of forming a superconducting structure includes determining a material for a first plane and a second plane; determining a separating medium; determining a separation between the first plane and the second plane based on a Bohr radius of the material; assembling the superconducting structure with the separating medium positioned between the first plane and the second plane; and adjusting one or more operating parameters to adjust a superconducting critical temperature of the superconducting structure.
- FIG. 1 illustrates a device according to some embodiments.
- FIG. 2A illustrates a structure of an iron-based superconductor with Se/As planes.
- FIG. 2B illustrates a unit cell of Bi 2 Sr 2 Ca 2 Cu 3 O 10 (BSCCO).
- FIG. 4 illustrates a high-temperature superconducting device according to some embodiments.
- FIG. 5 illustrates a process for constructing a high-temperature superconducting device according to some embodiments.
- FIG. 1 illustrates a superconducting device 100 according to some embodiments of the present disclosure.
- an arbitrarily high superconducting transition temperature T c going to room temperature and beyond, can be realized by two conducting or superconducting planes, plane 102 and plane 106 .
- Plane 102 and plane 106 can be, for example, CuO planes in cuprates, Fe planes in iron-based superconductor families, C planes in graphite-type materials, or other suitable materials.
- the conducting planes 102 and 106 are separated by separation medium 104 .
- Separation medium 104 can be, for example, one or more atomic planes (e.g., cuprates, pnictides, or other materials); insulating material layers (for example as in vdW-like devices); an empty space of the atomic scale (for example in the atomic structure of superconducting material used for planes 102 and 106 where monopole density can be controlled); or other medium.
- the separation medium 104 is one or more atomic planes, then the atomic structure can include sulfur layers or other suitable atoms, especially if conducting planes 102 and 106 are graphite-like carbon plates.
- separation medium 104 can be formed of Ca in BSCCO, Se/As atomic planes in iron-based superconductors, an oxide, or some other insulating planes as in van der Waals devices.
- FIG. 2A illustrates the Se/As atomic planes 202 in an iron-based superconductor.
- FIG. 2B illustrates a unit cell of BSCCO, which illustrates the Ca planes 206 .
- the structure illustrated in FIG. 1 can be stacked.
- the conducting planes 102 and 106 (the Fe planes 204 in FIG. 2A and the CuO2 planes 208 in FIG. 2B ) are separated by the Se/As plane 202 in FIG. 2A or the Ca plane 206 in FIG. 2B .
- Other materials systems may have other structures and FIGS. 2A and 2B are illustrated as examples only.
- the separation between plane 102 and plane 106 is about atomic thickness empty separation or to accommodate one or a few more insulating atomic planes in separation medium 104 .
- the thickness of separation medium 104 can be about one or a few Angstrom, and a few Angstrom thick in van der Waals (vdW) devices.
- separation medium 104 can be an empty space between, planes 102 and 106 that can each be formed of graphene, nitride or some other conducting materials, or by layering a conducting plane 106 with an insulating plane for separation medium 104 and then conducting plane 102 , forming a structure with separation medium 104 formed in between conducting planes 102 and 106 .
- Separation medium 104 can be formed of a thin (one or a few atoms in thickness) insulating material. Such a structure can theoretically realize an arbitrarily high superconducting transition temperature going to room temperatures (e.g., 20° C.) and beyond. As illustrated in FIG.
- the material system 100 exhibiting an elevated superconducting transition temperature includes two conducting planes (planes 102 and 106 ) separated by either a free space or one or a few rows of other atoms in between to form the separating medium 104 .
- FIGS. 3A and 3B further illustrate electron pairing in device 100 .
- device 100 includes planes 102 and 106 separated by separation medium 104 .
- Planes 102 and 106 can be conducting planes that are near a superconducting-insulating transition (SIT) condition.
- FIG. 3A further illustrates positions of atoms 314 and 316 within the planes 102 and 106 .
- atoms 314 are illustrated in plane 102 and atoms 316 are illustrated in plane 106 .
- Atoms are separated by distances, e.g., a as illustrated in FIG. 3A .
- FIG. 3B is presented without the atom positions for better illustration.
- separation medium 104 can include a plane 318 .
- a gate 308 (which can be a coil inducing the magnetic field) can be included to provide an electrical or magnetic field across planes 102 and 106 .
- a magnetic monopole 310 can be produced within separation medium 104 under the conditions that are further discussed below.
- Magnetic monopole 310 is illustrated as emerging between conducting planes 102 and 106 and forms a potential well for two electrons localized within the opposite conducting planes, illustrated as electron pairs 312 in FIGS. 3A and 3B .
- FIG. 3A reflects a discrete structure of conducting planes 102 and 106 .
- a square regular array is taken in illustrative purposes; the real atomic structure of the planes is arbitrary without the loss of generality.
- a magnetic monopole 310 can be formed in a volume formed in a 3D parallelepiped in device 100 .
- materials structures can be described by atomic separations c (in the Z direction) and (a, b) in the x-y plane.
- the separation a in the x-y plane is provided, although the atomic separation in some materials can be characterized as both distances a and b in the x-y plane.
- the 3D parallelepiped in device 100 can be formed by length s in the c-direction and lengths na depicting the x-y spacing of atoms 314 and 316 .
- a can be the size of the atomic elemental cell on planes 102 and 106 , and n being an integer of order 1.
- the length na in effect, defines the spatial scale ⁇ of the resulting superconducting electron pair 312 .
- atomic plane 318 in separation medium 104 can be an insulating material that is positioned between conducting layers 102 and 106 or an empty space separation. Plane 318 may also serve as a reservoir of electrons regulating the effective electron density, thus promoting creation of monopoles 310 .
- the magnetic monopoles 310 create a short distance attractive spatial domain of the potential, or the potential well, in which electrons form a bosonic bound state, the electron-electron repulsion is overcome, and Cooper pairs (electron pairs 312 ) are formed.
- These bosonic bound states have all the characteristics of a high angular momentum state as illustrated in FIGS. 3A and 3B .
- the strength of the binding potential increases with the decreasing separation s between charge carrying planes 102 and 106 , enabling elevation of the superconducting transition temperature of device 100 . Since the only energy scale involved in system 300 is the Fermi energy (the difference between the highest and lowest occupied single-particle states in separation medium 104 ), the superconducting transition temperature T c can be as high as 1000 Kelvin.
- Device 100 comprises two parallel conducting planes 102 and 106 that sandwich an insulating material plane 318 .
- a superconductor-insulator transition (SIT) at low temperatures at a quantum critical point (QCP) can be realized.
- the SIT refers to a quantum phase transition where electrons in the superconducting material planes 102 and 106 acquire a granular structure promoting creation of monopoles 310 .
- the QCP can be achieved by adjusting parameters p (e.g., doping, pressure, application of electric or magnetic fields, or other structural parameters).
- These parameters p can refer, for example, to doping of the materials in superconducting planes 102 and 106 in device 100 , application of pressure to device 100 , or application of electric or magnetic fields to superconducting device 100 . Consequently, upon varying one or more tuning parameters p around its critical value p c , a phase change to superconductivity can be realized.
- FIG. 4 illustrates further aspects of embodiments of a high-temperature superconducting (HTS) device 400 according to some embodiments of this disclosure.
- HTS high-temperature superconducting
- additional layers can be sandwiched with conducting planes and gates. These additional layers can serve as additional reservoirs of electrons. The voltage applied to the gates, which can be included in these additional layers, may also serve to enhance or deplete the electron density.
- plane 102 is a conducting plane and is depicted in FIG. 4 as adjacent to a layer 402 .
- Layer 402 includes a conductive plane and may further include other conductive and insulating planes.
- plane 106 is a conducting plane and is depicted in FIG.
- Layer 404 includes a conductive plane and may include other conductive or insulating planes. As is further illustrated in FIG. 4 and discussed above with respect to FIGS. 3A and 3B , planes 102 and 106 are separated by a separation distance s.
- layers 102 and 106 are adjacent to layers 402 and 404 that include conductive planes that are coupled to a power source 406 . Consequently, layers 402 and 404 operate as gates and can be charged to provide electric fields across planes 102 , 106 , and separation medium 104 .
- layers 402 and 404 can include magnetic coils driven by power source 406 to provide magnetic fields that can also work as a tuning parameter that takes device 100 close to the quantum point associated with the SIT, which promotes the self-induced electronic granularity and regulating the number of monopoles as was discussed above.
- Device 400 can be formed into a long superconducting wire. Alternatively, device 400 may be patterned to form, for example, a Josephson junction array or other such structure.
- the separation s between two base conducting planes 102 and 106 is of the atomic scale and therefore allows for quantum tunneling between the planes 102 and 106 .
- planes 102 and 106 acquire the self-induced electronic granularity with the characteristic spatial scale of the texture of order ⁇ and generate magnetic monopoles as discussed above.
- Magnetic monopoles serve as nucleation centers of spatially localized Cooper pairs such as electron pairs 312 illustrates in FIGS. 3A and 3B formed by two electrons with opposite spins bound by the attractive field of the monopole 310 .
- the wave functions of localized Cooper pairs 312 Upon cooling, the wave functions of localized Cooper pairs 312 increasingly overlap and at the superconducting transition temperature T c form globally coherent Cooper pair condensate, also the size of the Cooper pairs may remain less than the distance between the center of mass of the Cooper pairs and the overlap is achieved via the exponential or other tails of the wave functions. Since the presence of other monopoles improve electron binding, increasing the density of monopole plasma raises T c . Thus, tailoring artificial high-temperature superconducting (HTS) devices 100 with high at-will T c implies operating with a monopole density that is controlled by parameters s and/or p.
- HTS high-temperature superconducting
- the composition of possible materials for planes 102 and 106 , separation medium 104 , the separation s between layers 102 and 106 , as well as the electric or magnetic fields produced by layers 402 and 404 and power supply 406 are adjusted.
- the separation s and the composition of separation medium 104 are parameters that can be set on assembly of HTS device 400 while the electric and/or magnetic fields applied across separation medium 104 can be produced during operation of HTS device 400 .
- the parameter p can include pressure that can be applied through construction of device 400 or may be applied externally during operation of device 400 by housing device 400 in a pressure vessel or clamping device 100 between layers 402 and 404 .
- the energy for splitting the Cooper pair 312 and destroying superconductivity in planes 102 and 106 first increases with decreasing distance s between layers 102 and 106 , but then can drop passing some maximum. Consequently, the superconducting transition temperature T c first increases as the distance s between the planes of layers 102 and 106 is decreased, but then drops upon passing the maximum. Consequently, aspects of the present disclosure are directed to increasing the superconducting transition temperature T c to near room temperature (e.g., above 0° C.) and above, which can be achieved by the design of or manufacture of materials where the distance between the planes can be tuned by chemical or mechanical methods such that the separation s between layers 102 and 106 being atomically small, decreases further.
- near room temperature e.g., above 0° C.
- high electric or magnetic fields can be applied.
- the composition of separation medium 104 can be contained between sufficiently close conducting planes 102 and 106 and possess the monopole-induced potential binding electrons with sufficiently deep energy levels to induce transition to a superconducting state in device 100 .
- the transition temperature T c may be increased by applying a sufficient pressure to further reduce separation of planes 102 and 106 .
- the addition of pressure can, in some embodiments, promote generation of a sufficient number of monopoles 310 with a deep enough potential well that the transition temperature increases to close to or above room temperature.
- the candidate materials that can form device 100 , a separation medium 104 sandwiched between conducting plans 102 and 106 have a separation between planes 102 and 106 that satisfies the relation
- a B is the material Bohr radius of the atoms 314 and 316 in layers 102 and 106 .
- the Bohr radius a B refers to a distance between the nucleus and electron in a particular material and is in the expected range 0.5-5 nm, depending on composition of the material in which planes 102 and 106 are formed. Consequently, the separation between conducting planes 102 and 106 may be less than above 5 nm and may be between 0.05-0.5 nm.
- planes 102 and 106 may be carbon planes in graphite or similar material with the base interplane distance of 0.335 nm or similar and the separation medium 104 may be synthesized with intercalation of sulfur or hydrogen atoms to form carbonaceous sulfur-hybride (C—S—C) or hydrogen hybrid (C—H—C) or similar systems where the chemically tuned interplane distance can go down to 0.03 nm.
- C—S—C carbonaceous sulfur-hybride
- C—H—C hydrogen hybrid
- layers 102 and 106 can be formed of compounds that include conducting layers like cuprates (CuO layers), pnictides (Fe layers), graphite (densely packed carbon layers), vdW graphene-based systems, or vdW transition metals nitrides-based systems, or cuprate-based systems, or vdW comprising other compounds of the kind.
- Varying a doping parameter p of planes 102 and 106 which may influence s as is in the case of pnictides, or by intercalating interlayer electron or hole donors (in case of graphite) or using an electric gate that changes electron/hole density, the magnetic monopole density can be optimized to achieve the maximal T c .
- the electric gates in layers 402 and 404 can be powered by power source 406 to apply charge on planes 102 and 106 .
- artificially prepared atomically thin conducting films that are in the vicinity of the SIT can be used.
- the candidate atoms or compounds for separation medium 104 include but are not restricted to oxides of the metals constituting conducting planes 102 and 106
- Materials that can be used in planes 102 and 106 can include nitrides of the transition metals, graphene monolayers, hybrids composed of two-layered topological insulators, and exfoliated monolayer films of cuprates or pnictides to form a van der Walls (vdW) like devices.
- the films out of the described materials are collapsed on top of each other to make a double- or electron-reservoir sandwich-like triple layers or like vdW devices.
- the layer separation s is controlled by the conditions of preparation of the vdW and/or by pressure either mechanically applied to the device or caused by the electric gate that may be the part of the device. Depending on the candidate materials the usual measures preventing contamination or degrading the films are taken.
- the HTS device 100 as discussed above can be achieved as illustrated in FIG. 4 with layers 402 and 404 including being sulfur atoms or similar decorated on the surface of a two-layer graphite device in which case planes 102 and 106 can be monoatomic carbon planes or similar monolayer films described above.
- the decoration serves to increase the electron density thereby promoting the generation of monopoles.
- layers 402 and 404 can be iron-cast plates while planes 102 and 106 are formed of graphite.
- Separation medium 104 between conducting planes 102 and 106 can include intercalating heavy atoms such as, for example, Uranium or Plutonium. Other heavy atoms can be utilized as well.
- FIG. 5 illustrates a process 500 of providing a superconducting device 100 according to some embodiments of the present disclosure.
- the materials that form a first plane 102 and a second plane 106 are determined. As discussed above, these materials may be conductive or superconducting materials such as, for example, graphite, cuprates, pnictides, or other conducting and superconducting materials as have been previously discussed.
- the separation medium 104 is determined. Determining the materials for planes 102 and 106 and separation medium 104 in steps 502 and 504 may include doping as well, as discussed above.
- the separation s between planes 102 and 106 are determined as described above.
- step 508 device 100 can be assembled with planes 102 and 106 and separation medium 104 into superconducting device 100 such as that shown in FIGS. 1 and 4 , for example.
- superconducting device 100 may be assembled to form wires or patterned to form superconducting structures.
- electric or magnetic fields as well as pressure or other operating parameters can be applied to device 100 and adjusted to provide for a superconducting structure 400 where device 100 with a particular superconducting transition temperature T c is formed.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
A superconducting structure is presented. In some embodiments, the superconducting structure includes a first plane of material; a second plane of material; and a separating medium positioned between the first plane and the second plane, wherein a superconducting critical temperature of the superconducting structure is adjusted by control of one or more parameters.
Description
- The present application claims priority to U.S. Provisional Application No. 63/093,164, entitled “Tailoring Materials with Arbitrary High Superconducting Transition Temperature, Including Room Temperatures and Beyond,” filed on Oct. 17, 2020, which is herein incorporated by reference in its entirety.
- Embodiments of the present invention are related superconducting devices.
- Superconductivity offers an irreplaceable platform for a broad range of technological and industrial applications ranging from power transfer through the electric grid to quantum computing. Superconducting materials promise to solve the problem of energy storage and transporting electric energy with no power dissipation in the grid. Materials that have been shown to exhibit superconductivity, the property of electrical current flow with no resistance, include chemical elements (e.g. mercury or lead), alloys (e.g., niobium-titanium, germanium-niobium, and niobium nitride), ceramics and crystalline cuprates (bismuth strontium calcium copper oxides, yttrium barium copper oxide, and others, or magnesium diboride), superconducting pnictides (e.g., fluorine-doped LaOFeAs), or organics (e.g., fullerenes and carbon nanotubes), van der Waals devices (having two or more two-dimensional layered materials, for example conducting planes like graphene), and interfaces between insulators, that are cooled below a superconducting transition temperature Tc. The major obstacle hindering the development of these technologies lies in the low transition temperature Tc to the superconducting state in materials that exhibit superconductivity. There are extensive applications for near room temperature high temperature superconductors. These applications include, for example, highly efficient power transmission over superconducting lines, near frictionless rail transportation over superconducting rails, high-speed and low power electronic devices using superconducting metallization and device interconnects, and high temperature operating supercomputer devices with superconducting qubits.
- The discovery of high-Tc superconductivity became a major breakthrough that has allowed the start of more technological applications of superconducting materials. Materials have been considered to exhibit high temperature superconductivity if the transition temperature Tc below which the material exhibits superconductivity is above 30 Kelvin (−243.15° C.). In the 1980s a class of superconducting materials began to emerge that exhibited superconductivity at a critical temperature Tc above that of liquid nitrogen (77K or −196.15° C.), starting with the paper by J. G. Bednorz and K. A. Muller, “Possible high Tc superconductivity in the Ba—La—Cu—O system,” Z. Phys. B. 64 (1), 189-193 (1986). Materials that have been shown to exhibit high-temperature superconductivity include Hg12T13Ba30Ca30Cu45O127 (Tc=138K), Bi2Sr2Ca2Cu3O10 (BSCCO, Tc=110K), and YBa2Cu3O7 (YBCO, Tc=92K). Each of these superconducting materials exhibit superconductivity at critical temperatures above that of liquid nitrogen. However, the existing limit on critical temperatures Tc of about 100 K is not sufficient for broad technological and commercial applications since the related costs for refrigeration remain high.
- Some materials have been shown to exhibit superconductivity at higher transition temperatures under pressure, for example hydrogen sulfide (Tc=203K at 100 GPa) and LaH10 (Tc at 250 K at 170 GPa). In October of 2020, a group from the University of Rochester announced a material that exhibits superconductivity at near room temperature. (Elliot Snider, Nathan Dasenbrock-Gammon, Raymond McBride, Mathew Debessai, Hiranya Vindana, Kevin Vencatasamy, Keith V. Lawler, Ashkan Salamat, and P. Ranga, “Room-temperature superconductivity in a carbonaceous sulfur hydride,” Nature 586 (7329), 373-377 (October 2020). In particular, a compound of photosynthesized carbonaceous sulfer hybride (H2S+CH4) exhibited superconductivity at Tc=287K (14° C.) at a pressure of 267 GPa.
- Therefore, there is a need to develop better superconducting devices that operate at temperatures near room temperature. Such devices do not need cooling with cryogenic materials and may only need chilled water cooling to function.
- In some embodiments, a superconducting structure is presented. In some embodiments, the superconducting structure includes a first plane of material; a second plane of material; and a separating medium positioned between the first plane and the second plane, wherein a superconducting critical temperature of the superconducting structure is adjusted by control of one or more parameters.
- A method of forming a superconducting structure according to some embodiments includes determining a material for a first plane and a second plane; determining a separating medium; determining a separation between the first plane and the second plane based on a Bohr radius of the material; assembling the superconducting structure with the separating medium positioned between the first plane and the second plane; and adjusting one or more operating parameters to adjust a superconducting critical temperature of the superconducting structure.
- These and other embodiments are discussed below with respect to the following figures.
-
FIG. 1 illustrates a device according to some embodiments. -
FIG. 2A illustrates a structure of an iron-based superconductor with Se/As planes. -
FIG. 2B illustrates a unit cell of Bi2Sr2Ca2Cu3O10 (BSCCO). -
FIGS. 3A and 3B illustrates a electron pairing from magnetic monopole production. -
FIG. 4 illustrates a high-temperature superconducting device according to some embodiments. -
FIG. 5 illustrates a process for constructing a high-temperature superconducting device according to some embodiments. - These and other aspects of embodiments of the present invention are further discussed below.
- In the following description, specific details are set forth describing some embodiments of the present invention. It will be apparent, however, to one skilled in the art that some embodiments may be practiced without some or all of these specific details. The specific embodiments disclosed herein are meant to be illustrative but not limiting. One skilled in the art may realize other elements that, although not specifically described here, are within the scope and the spirit of this disclosure.
- This description illustrates inventive aspects and embodiments should not be taken as limiting—the claims define the protected invention. Various changes may be made without departing from the spirit and scope of this description and the claims. In some instances, well-known structures and techniques have not been shown or described in detail in order not to obscure the invention.
- Throughout the specification, reference is made to theoretical explanations for the behaviors expected in the various embodiments presented. These descriptions and explanations are intended to assist in understanding the behavior of the embodiments disclosed below. The explanations provided below are not intended to be limiting of the claimed invention in any way. The claimed invention is not limited by any of the scientific theories used to help explain the behavior of specific devices described below.
-
FIG. 1 illustrates asuperconducting device 100 according to some embodiments of the present disclosure. As illustrated inFIG. 1 , an arbitrarily high superconducting transition temperature Tc, going to room temperature and beyond, can be realized by two conducting or superconducting planes,plane 102 andplane 106.Plane 102 andplane 106 can be, for example, CuO planes in cuprates, Fe planes in iron-based superconductor families, C planes in graphite-type materials, or other suitable materials. The conductingplanes separation medium 104.Separation medium 104 can be, for example, one or more atomic planes (e.g., cuprates, pnictides, or other materials); insulating material layers (for example as in vdW-like devices); an empty space of the atomic scale (for example in the atomic structure of superconducting material used forplanes separation medium 104 is one or more atomic planes, then the atomic structure can include sulfur layers or other suitable atoms, especially if conductingplanes separation medium 104 can be formed of Ca in BSCCO, Se/As atomic planes in iron-based superconductors, an oxide, or some other insulating planes as in van der Waals devices. -
FIG. 2A illustrates the Se/Asatomic planes 202 in an iron-based superconductor.FIG. 2B illustrates a unit cell of BSCCO, which illustrates the Ca planes 206. As is illustrated inFIGS. 2A and 2B , the structure illustrated inFIG. 1 can be stacked. The conducting planes 102 and 106 (the Fe planes 204 inFIG. 2A and the CuO2 planes 208 inFIG. 2B ) are separated by the Se/Asplane 202 inFIG. 2A or theCa plane 206 inFIG. 2B . Other materials systems may have other structures andFIGS. 2A and 2B are illustrated as examples only. - Returning to
FIG. 1 , the separation betweenplane 102 andplane 106 is about atomic thickness empty separation or to accommodate one or a few more insulating atomic planes inseparation medium 104. The thickness ofseparation medium 104, then, can be about one or a few Angstrom, and a few Angstrom thick in van der Waals (vdW) devices. In some embodiments, for example vdWdevices separation medium 104, can be an empty space between,planes plane 106 with an insulating plane forseparation medium 104 and then conductingplane 102, forming a structure withseparation medium 104 formed in between conductingplanes Separation medium 104 can be formed of a thin (one or a few atoms in thickness) insulating material. Such a structure can theoretically realize an arbitrarily high superconducting transition temperature going to room temperatures (e.g., 20° C.) and beyond. As illustrated inFIG. 1 , thematerial system 100 exhibiting an elevated superconducting transition temperature includes two conducting planes (planes 102 and 106) separated by either a free space or one or a few rows of other atoms in between to form the separatingmedium 104. - While charge conduction is restricted mostly to within
planes planes FIGS. 3A and 3B . The origin of monopoles is discussed in greater detail in M. Cristina Diamantini, C. A. Trugenberger and Valerii M. Vinokur, “Confinement and asymptotic freedom with Cooper pairs”, Nature Comm. Phys. 2018, 1:77, 10.138. -
FIGS. 3A and 3B further illustrate electron pairing indevice 100. As illustrateddevice 100 includesplanes separation medium 104.Planes FIG. 3A further illustrates positions ofatoms planes atoms 314 are illustrated inplane 102 andatoms 316 are illustrated inplane 106. Atoms are separated by distances, e.g., a as illustrated inFIG. 3A .FIG. 3B is presented without the atom positions for better illustration. - As illustrated in
FIGS. 3A and 3B ,separation medium 104 can include aplane 318. As shown inFIG. 3A , a gate 308 (which can be a coil inducing the magnetic field) can be included to provide an electrical or magnetic field acrossplanes FIG. 3A , amagnetic monopole 310 can be produced withinseparation medium 104 under the conditions that are further discussed below. -
Magnetic monopole 310 is illustrated as emerging between conductingplanes FIGS. 3A and 3B . The fact that electrons move mostly within planes whereas the tunneling between planes is a rare event, results in the trend of the formedelectron pairs 312 to have higher orbital (e.g., to form d-orbital) moments. -
FIG. 3A reflects a discrete structure of conductingplanes FIGS. 3A and 3B , in operation, amagnetic monopole 310 can be formed in a volume formed in a 3D parallelepiped indevice 100. As illustrated above inFIGS. 2A and 2B , materials structures can be described by atomic separations c (in the Z direction) and (a, b) in the x-y plane. InFIG. 3A , the separation a in the x-y plane is provided, although the atomic separation in some materials can be characterized as both distances a and b in the x-y plane. The 3D parallelepiped indevice 100 can be formed by length s in the c-direction and lengths na depicting the x-y spacing ofatoms planes order 1. The length na, in effect, defines the spatial scale ξ of the resultingsuperconducting electron pair 312. - As illustrated in
FIGS. 3A and 3B ,atomic plane 318 inseparation medium 104 can be an insulating material that is positioned between conductinglayers Plane 318 may also serve as a reservoir of electrons regulating the effective electron density, thus promoting creation ofmonopoles 310. Themagnetic monopoles 310 create a short distance attractive spatial domain of the potential, or the potential well, in which electrons form a bosonic bound state, the electron-electron repulsion is overcome, and Cooper pairs (electron pairs 312) are formed. These bosonic bound states have all the characteristics of a high angular momentum state as illustrated inFIGS. 3A and 3B . The strength of the binding potential increases with the decreasing separation s betweencharge carrying planes device 100. Since the only energy scale involved in system 300 is the Fermi energy (the difference between the highest and lowest occupied single-particle states in separation medium 104), the superconducting transition temperature Tc can be as high as 1000 Kelvin. -
Device 100, as illustrated inFIG. 1 andFIGS. 3A and 3B , comprises twoparallel conducting planes material plane 318. By controlling one or more parameters influencing the electronic parameters ofplanes plane 318, a superconductor-insulator transition (SIT) at low temperatures at a quantum critical point (QCP) can be realized. The SIT refers to a quantum phase transition where electrons in thesuperconducting material planes monopoles 310. The QCP can be achieved by adjusting parameters p (e.g., doping, pressure, application of electric or magnetic fields, or other structural parameters). These parameters p can refer, for example, to doping of the materials insuperconducting planes device 100, application of pressure todevice 100, or application of electric or magnetic fields tosuperconducting device 100. Consequently, upon varying one or more tuning parameters p around its critical value pc, a phase change to superconductivity can be realized. -
FIG. 4 illustrates further aspects of embodiments of a high-temperature superconducting (HTS)device 400 according to some embodiments of this disclosure. As illustrated inFIG. 4 , in some embodiments additional layers can be sandwiched with conducting planes and gates. These additional layers can serve as additional reservoirs of electrons. The voltage applied to the gates, which can be included in these additional layers, may also serve to enhance or deplete the electron density. As illustrated inFIG. 4 , and discussed above,plane 102 is a conducting plane and is depicted inFIG. 4 as adjacent to alayer 402.Layer 402 includes a conductive plane and may further include other conductive and insulating planes. Similarly, as discussed aboveplane 106 is a conducting plane and is depicted inFIG. 4 as adjacent tolayer 404.Layer 404 includes a conductive plane and may include other conductive or insulating planes. As is further illustrated inFIG. 4 and discussed above with respect toFIGS. 3A and 3B , planes 102 and 106 are separated by a separation distance s. - As illustrated in the example illustrated in
FIG. 4 , layers 102 and 106 are adjacent tolayers power source 406. Consequently, layers 402 and 404 operate as gates and can be charged to provide electric fields acrossplanes separation medium 104. In some embodiments,layers power source 406 to provide magnetic fields that can also work as a tuning parameter that takesdevice 100 close to the quantum point associated with the SIT, which promotes the self-induced electronic granularity and regulating the number of monopoles as was discussed above. -
Device 400 can be formed into a long superconducting wire. Alternatively,device 400 may be patterned to form, for example, a Josephson junction array or other such structure. - The separation s between two
base conducting planes planes FIGS. 3A and 3B formed by two electrons with opposite spins bound by the attractive field of themonopole 310. Upon cooling, the wave functions of localized Cooper pairs 312 increasingly overlap and at the superconducting transition temperature Tc form globally coherent Cooper pair condensate, also the size of the Cooper pairs may remain less than the distance between the center of mass of the Cooper pairs and the overlap is achieved via the exponential or other tails of the wave functions. Since the presence of other monopoles improve electron binding, increasing the density of monopole plasma raises Tc. Thus, tailoring artificial high-temperature superconducting (HTS)devices 100 with high at-will Tc implies operating with a monopole density that is controlled by parameters s and/or p. - Consequently, to provide for
HTS device 400 as illustrated inFIG. 4 , the composition of possible materials forplanes separation medium 104, the separation s betweenlayers layers power supply 406 are adjusted. The separation s and the composition ofseparation medium 104 are parameters that can be set on assembly ofHTS device 400 while the electric and/or magnetic fields applied acrossseparation medium 104 can be produced during operation ofHTS device 400. Further, in some embodiments, the parameter p can include pressure that can be applied through construction ofdevice 400 or may be applied externally during operation ofdevice 400 byhousing device 400 in a pressure vessel or clampingdevice 100 betweenlayers - The energy for splitting the
Cooper pair 312 and destroying superconductivity inplanes layers layers layers separation medium 104 can be contained between sufficiently close conductingplanes device 100. Additionally, as discussed above, apart from applying electric and/or magnetic fields, the transition temperature Tc may be increased by applying a sufficient pressure to further reduce separation ofplanes monopoles 310 with a deep enough potential well that the transition temperature increases to close to or above room temperature. - In some embodiments according to this disclosure, the candidate materials that can form
device 100, aseparation medium 104 sandwiched between conductingplans planes -
- where aB is the material Bohr radius of the
atoms layers planes planes separation medium 104 may be synthesized with intercalation of sulfur or hydrogen atoms to form carbonaceous sulfur-hybride (C—S—C) or hydrogen hybrid (C—H—C) or similar systems where the chemically tuned interplane distance can go down to 0.03 nm. The production of photochemically synthesized C—S—H systems is described, for example, in Elliot Snider, Nathan Dasenbrock-Gammon, Raymond McBride, Mathew Debessai, Hiranya Vindana, Kevin Vencatasamy, Keith V. Lawler, Ashkan Salamat, and P. Ranga, “Room-temperature superconductivity in a carbonaceous sulfur hydride,” Nature 586 (7329), 373-377 (October 2020). - In some embodiments,
layers planes FIG. 4 , the electric gates inlayers power source 406 to apply charge onplanes - In some embodiments, artificially prepared atomically thin conducting films that are in the vicinity of the SIT can be used. The candidate atoms or compounds for
separation medium 104 include but are not restricted to oxides of the metals constituting conductingplanes planes - The
HTS device 100 as discussed above can be achieved as illustrated inFIG. 4 withlayers layers planes Separation medium 104 between conductingplanes -
FIG. 5 illustrates aprocess 500 of providing asuperconducting device 100 according to some embodiments of the present disclosure. Instep 502, the materials that form afirst plane 102 and asecond plane 106 are determined. As discussed above, these materials may be conductive or superconducting materials such as, for example, graphite, cuprates, pnictides, or other conducting and superconducting materials as have been previously discussed. Instep 504 theseparation medium 104 is determined. Determining the materials forplanes separation medium 104 insteps step 506, the separation s betweenplanes step 508,device 100 can be assembled withplanes separation medium 104 intosuperconducting device 100 such as that shown inFIGS. 1 and 4 , for example. As discussed above,superconducting device 100 may be assembled to form wires or patterned to form superconducting structures. Instep 510, electric or magnetic fields as well as pressure or other operating parameters can be applied todevice 100 and adjusted to provide for asuperconducting structure 400 wheredevice 100 with a particular superconducting transition temperature Tc is formed. - The above detailed description is provided to illustrate specific embodiments of the present invention and is not intended to be limiting. Numerous variations and modifications within the scope of the present invention are possible. The present invention is set forth in the following claims.
Claims (37)
1. A superconducting structure, comprising:
a first plane of material;
a second plane of material; and
a separating medium positioned between the first plane and the second plane,
wherein the first plane and the second plane are separated by a separation distance, and
wherein a superconducting critical temperature of the superconducting structure is adjusted by control of one or more parameters.
2. The structure of claim 1 , wherein the first plane and the second plane include insulating materials.
3. The structure of claim 1 , wherein the first plane and the second plane include conducting materials.
4. The structure of claim 1 , wherein the separation distance between the first plane and the second plane is less than 5 nm.
5. The structure of claim 4 , wherein the separation distance between the first plane and the second plane is less than 0.5 nm.
6. The structure of claim 1 , wherein the separation between the first plane and the second plane is less than a Bohr radius of the material of the first plane and the second plane.
7. The structure of claim 3 , wherein the conducting material is carbonaceous sulfur hybride.
8. The structure of claim 3 , wherein the material of the first plane and the second plane is graphite.
9. The structure of claim 8 , wherein the graphite planes of the first plane and the second plane are positioned between iron-cast plates.
10. The structure of claim 9 , wherein the separation medium is doped with heavy atoms.
11. The structure of claim 10 , wherein the heavy atoms are Uranium or Plutonium.
12. The structure of claim 1 , wherein the first plane and the second plane can be formed of graphite, carbon atoms, cuprates, nitrides of transition metals, pnictides, or other conducting materials.
13. The structure of claim 1 , wherein the separation medium is one of free space, an insulating material, or one or more atomic planes.
14. The structure of claim 1 , further including a power source coupled to layers adjacent to the first plane and the second plane to provide an electric field across the superconducting structure.
15. The structure of claim 1 , further including a power source coupled to layers adjacent to the first plane and the second plane to provide a magnetic field across the superconducting structure.
16. The structure of claim 1 , further including a pressure system applying pressure to the superconducting structure.
17. The structure of claim 1 , wherein the superconducting structure forms a wire.
18. The structure of claim 1 , wherein the superconducting structure is patterned.
19. The structure of claim 1 , wherein the superconducting structure is achieved by decoration of the first and the second planes
20. A method of forming a superconducting structure, comprising
determining a material for a first plane and a second plane;
determining a separating medium;
determining a separation between the first plane and the second plane based on a Bohr radius of the material;
assembling the superconducting structure with the separating medium positioned between the first plane and the second plane; and
adjusting one or more operating parameters to achieve a superconducting critical temperature of the superconducting structure.
21. The method of claim 20 , wherein determining the material for the first plane and the second plane includes determining insulating materials.
22. The method of claim 20 , wherein determining the material for the first plane and the second plane includes determining conducting materials.
23. The method of claim 20 , wherein determining the separation includes determining that the separation between the first plane and the second plane is less than 5 nm.
24. The method of claim 23 , wherein determining the separation includes determining that the separation distance between the first plane and the second plane is less than 0.5 nm.
25. The method of claim 20 , wherein determining the separation includes determining that the separation between the first plane and the second plane is less than a Bohr radius of the material of the first plane and the second plane.
26. The method of claim 20 , wherein determining the separation material includes determining that the separation material is carbenacous sulfur hybride.
27. The method of claim 26 , wherein the material of the first plane and the second plane is graphite.
28. The method of claim 20 , wherein the separation medium is free space, an insulating material, or one or more atomic planes.
29. The method of claim 20 , wherein the first plane and the second plane can be formed of graphite, cuprates, or pnictides.
30. The method of claim 20 , further including providing power to layers adjacent to the first plane and the second plane to provide an electric field across the superconducting structure.
31. The method of claim 20 , further including providing power to layers adjacent to the first plane and the second plane to provide a magnetic field across the superconducting structure.
32. The method of claim 20 , further including applying pressure to the superconducting structure.
33. The method of claim 20 , wherein the superconducting structure forms a wire.
34. The method of claim 20 , wherein the superconducting structure is patterned.
35. The method of claim 20 , further including decorating the first and the second planes
36. The method of claim 20 , wherein the first plane and the second plane are each graphite further including iron-cast plates positioned such that two-layer graphite is positioned between the iron-cast plates, and further including intercalating heavy atoms into the separation medium between conducting planes.
37. The method of claim 36 , wherein the heavy atoms are Uranium or Plutonium.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/170,584 US20220123194A1 (en) | 2020-10-17 | 2021-02-08 | High Temperature Superconducting Device |
PCT/US2021/054903 WO2022081796A1 (en) | 2020-10-17 | 2021-10-14 | High temperature superconducting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063093164P | 2020-10-17 | 2020-10-17 | |
US17/170,584 US20220123194A1 (en) | 2020-10-17 | 2021-02-08 | High Temperature Superconducting Device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20220123194A1 true US20220123194A1 (en) | 2022-04-21 |
Family
ID=81185668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/170,584 Abandoned US20220123194A1 (en) | 2020-10-17 | 2021-02-08 | High Temperature Superconducting Device |
Country Status (2)
Country | Link |
---|---|
US (1) | US20220123194A1 (en) |
WO (1) | WO2022081796A1 (en) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3810494C2 (en) * | 1987-03-27 | 1998-08-20 | Hitachi Ltd | Integrated semiconductor circuit device with superconducting layer |
US5087606A (en) * | 1990-05-29 | 1992-02-11 | General Electric Company | Bismuth-containing superconductors containing radioactive dopants |
EP0569781A1 (en) * | 1992-05-11 | 1993-11-18 | Siemens Aktiengesellschaft | Superconducting device comprising two wires of high Tc superconductive material and a transition gap between them |
IT1261373B (en) * | 1993-12-07 | 1996-05-20 | Antonio Bianconi | HIGH CRITICAL TEMPERATURE SUPERCONDUCTORS CONSISTING OF METALLIC HETEROSTRUCTURES GOING TO THE ATOMIC LIMIT. |
EP0883143B1 (en) * | 1996-10-30 | 2008-09-17 | Hitachi Medical Corporation | Superconducting magnetic-field generating device |
GB0822901D0 (en) * | 2008-12-16 | 2009-01-21 | Magnifye Ltd | Superconducting systems |
GB201004554D0 (en) * | 2010-03-18 | 2010-05-05 | Isis Innovation | Superconducting materials |
US8611056B2 (en) * | 2011-03-14 | 2013-12-17 | Varian Semiconductor Equipment Associates Inc. | Superconducting fault current limiter |
US10084182B2 (en) * | 2017-02-23 | 2018-09-25 | Nanotek Instruments, Inc. | Alkali metal-sulfur secondary battery containing a protected sulfur cathode and manufacturing method |
WO2018185306A1 (en) * | 2017-04-07 | 2018-10-11 | Universität Leipzig | Graphite superconductor and use thereof |
JP7048413B2 (en) * | 2018-05-23 | 2022-04-05 | 株式会社東芝 | How to operate the superconducting magnet device and the superconducting magnet device |
US20200167684A1 (en) * | 2018-11-26 | 2020-05-28 | International Business Machines Corporation | Qubit tuning by magnetic fields in superconductors |
-
2021
- 2021-02-08 US US17/170,584 patent/US20220123194A1/en not_active Abandoned
- 2021-10-14 WO PCT/US2021/054903 patent/WO2022081796A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2022081796A1 (en) | 2022-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Bussmann-Holder et al. | High-temperature superconductors: underlying physics and applications | |
Gui et al. | Chemistry in superconductors | |
Raveau | Transition metal oxides: Promising functional materials | |
Wesche | High-temperature superconductors | |
Kovalenko | High-temperature superconductivity: From macroto nanoscale structures | |
US4082991A (en) | Superconducting energy system | |
Narlikar | Frontiers in superconducting materials | |
Tayaba et al. | Silicon-Germanium and carbon-based superconductors for electronic, industrial, and medical applications | |
US20220123194A1 (en) | High Temperature Superconducting Device | |
Ikram et al. | High Temperature Superconductors | |
JP2022549539A (en) | ferroelectric superconductors below and above room temperature | |
Baskaran | Five-fold way to new high T c superconductors | |
AGORA | THEORETICAL CHARACTERIZATION OF THE STRUCTURAL, ELECTRONIC AND MECHANICAL PROPERTIES OF SUPERCONDUCTING GdBa2Cu3O7-x | |
Bhattacharyya et al. | Noncuprate superconductors: Materials, structures and properties | |
Phillips | Dopant sites and structure in high Tc layered cuprates | |
Dahal | Superconductivity: a centenary celebration | |
Abd-Shukor et al. | High temperature superconductors: materials, mechanisms and applications | |
Geballe | Searching for superconductivity above the present limit | |
De Silva | Trends in Superconductivity; Marvel Materials in the Odyssey to Room Temperature Superconductors | |
Yang et al. | A Theory of Superconductivity based on Bose-Einstein Statistics and Its Application | |
Cataudella et al. | Coexistence of charges trapped in local lattice distortions and free carriers in cuprates | |
KR20230067626A (en) | ENERGY HARVESTING AND STORAGE FEEDBACK CELL | |
Gnawali et al. | High Temperature Superconductivity: A Prospective Remedy for Energy Crisis in Future | |
Cochran | A Process for Hybrid Superconducting and Graphene Devices | |
Chebotar’ | Systems of Strongly Correlated Electrons Interacting with Each Other and with Phonons: Diagrammatic Approach |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |