US20220037491A1 - Structure and formation method of semiconductor device with metal gate stack - Google Patents
Structure and formation method of semiconductor device with metal gate stack Download PDFInfo
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- US20220037491A1 US20220037491A1 US16/943,672 US202016943672A US2022037491A1 US 20220037491 A1 US20220037491 A1 US 20220037491A1 US 202016943672 A US202016943672 A US 202016943672A US 2022037491 A1 US2022037491 A1 US 2022037491A1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
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- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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Definitions
- FIGS. 1A-1B are top views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments.
- FIGS. 2A-2D are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments.
- FIGS. 3A-3Q are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments.
- FIGS. 4A-4C are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments.
- first and second features are formed in direct contact
- additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
- present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures.
- the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
- the apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- the term “substantially” in the description such as in “substantially flat” or in “substantially coplanar”, etc., will be understood by the person skilled in the art.
- the adjective substantially may be removed.
- the term “substantially” may also include embodiments with “entirely”, “completely”, “all”, etc.
- the term “substantially” may also relate to 90% or higher of what is specified, such as 95% or higher, especially 99% or higher, including 100%.
- terms such as “substantially parallel” or “substantially perpendicular” are to be interpreted as not to exclude insignificant deviation from the specified arrangement and may include for example deviations of up to 10 degrees in some embodiments.
- the word “substantially” does not exclude “completely” e.g. a composition which is “substantially free” from Y may be completely free from Y in some embodiments.
- Embodiments of the disclosure may relate to FinFET structure having fins.
- the fins may be patterned using any suitable method.
- the fins may be patterned using one or more photolithography processes, including double-patterning or multi-patterning processes.
- double-patterning or multi-patterning processes combine photolithography and self-aligned processes, allowing patterns to be created that have, for example, pitches smaller than what is otherwise obtainable using a single, direct photolithography process.
- a sacrificial layer is formed over a substrate and patterned using a photolithography process. Spacers are formed alongside the patterned sacrificial layer using a self-aligned process. The sacrificial layer is then removed, and the remaining spacers may then be used to pattern the fins.
- the fins may be formed using one or more other applicable processes.
- Embodiments of the disclosure may relate to the gate all around (GAA) transistor structures.
- the GAA structure may be patterned using any suitable method.
- the structures may be patterned using one or more photolithography processes, including double-patterning or multi-patterning processes.
- double-patterning or multi-patterning processes combine photolithography and self-aligned processes, allowing patterns to be created that have, for example, pitches smaller than what is otherwise obtainable using a single, direct photolithography process.
- a sacrificial layer is formed over a substrate and patterned using a photolithography process. Spacers are formed alongside the patterned sacrificial layer using a self-aligned process. The sacrificial layer is then removed, and the remaining spacers may then be used to pattern the GAA structure.
- FIGS. 2A-2D are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments.
- a semiconductor substrate 100 is received or provided.
- the semiconductor substrate 100 has a first region 10 and a second region 20 .
- one or more short channel (SC) devices are to be formed over the first region 10 .
- One or more long channel (LC) devices are to be formed over the second region 20 .
- the semiconductor substrate 100 is a bulk semiconductor substrate, such as a semiconductor wafer.
- the semiconductor substrate 100 may include silicon or other elementary semiconductor materials such as germanium.
- the semiconductor substrate 100 may be un-doped or doped (e.g., p-type, n-type, or a combination thereof).
- the semiconductor substrate 100 includes an epitaxially grown semiconductor layer on a dielectric layer.
- the epitaxially grown semiconductor layer may be made of silicon germanium, silicon, germanium, one or more other suitable materials, or a combination thereof.
- the semiconductor substrate 100 includes a compound semiconductor.
- the compound semiconductor includes one or more III-V compound semiconductors having a composition defined by the formula Al X1 Ga X2 In X3 As Y1 P Y2 N Y3 Sb Y4 , where X 1 , X 2 , X 3 , Yl, Y 2 , Y 3 , and Y 4 represent relative proportions. Each of them is greater than or equal to zero, and added together they equal 1.
- the compound semiconductor may include silicon carbide, gallium arsenide, indium arsenide, indium phosphide, one or more other suitable compound semiconductors, or a combination thereof. Other suitable substrate including II-VI compound semiconductors may also be used.
- a semiconductor stack having multiple semiconductor layers is formed over the semiconductor substrate 100 , in accordance with some embodiments.
- the semiconductor stack covers the first region 10 and the second region 20 of the semiconductor substrate 10 .
- the semiconductor stack includes multiple semiconductor layers 102 a , 102 b , 102 c , and 102 d , and the semiconductor stack also includes multiple semiconductor layers 104 a , 104 b , 104 c , and 104 d .
- the semiconductor layers 102 a - 102 d and the semiconductor layers 104 a - 104 d are laid out alternately, as shown in FIG. 2A .
- the semiconductor layer 102 a is thicker than the semiconductor layer 102 b , 102 c , or 102 d . In some embodiments, the semiconductor layer 104 a is thicker than the semiconductor layer 104 b , 104 c , or 104 d.
- the side of the semiconductor substrate 100 where the semiconductor stack is located is referred to as the frontside.
- the side opposite to the frontside with respect to the semiconductor substrate 100 is referred to as the backside.
- the semiconductor layers 102 b - 102 d function as first sacrificial layers that will be removed in a subsequent process to release the semiconductor layers 104 b - 104 d .
- the semiconductor layers 104 b - 104 d that are released may function as channel structures of one or more transistors.
- the semiconductor layer 102 a is used as a second sacrificial layer and will be replaced with a dielectric material in a subsequent process.
- the semiconductor layer 104 a functions as a base layer.
- the base layer may be formed into base structures and be used to physically separate a subsequently formed metal gate and a subsequently formed backside conductive contact from each other by a greater distance. Therefore, short circuiting between the subsequently formed metal gate and the subsequently formed backside conductive contact is prevented.
- the semiconductor layers 104 a - 104 d that will be used to form channel structures are made of a material that is different than that of the semiconductor layers 102 a - 102 d .
- the semiconductor layers 104 a - 104 d are made of or include silicon.
- the first sacrificial layers ( 102 b - 102 c ) and the second sacrificial layer ( 102 a ) include silicon germanium with different atomic concentrations of germanium to achieve different etching selectivity and/or different oxidation rates during subsequent processing.
- the semiconductor layer 102 a has a different atomic concentration of germanium than that of the semiconductor layer 102 b , 102 c , or 102 d . In some embodiments, the semiconductor layer 102 a has a greater atomic concentration of germanium than that of the semiconductor layer 102 b , 102 c , or 102 d .
- the atomic concentration of germanium of the semiconductor layer 102 a may be in a range from about 46% to about 65%.
- the atomic concentration of germanium of the semiconductor layer 102 b , 102 c , or 102 d may be in a range from about 21% to about 45%.
- the semiconductor layers 102 b - 102 d , the semiconductor layers 104 a - 104 d , and the semiconductor layer 102 a include any combination of materials that can provide desired etching selectivity, desired oxidation rate differences, and/or desired performance characteristics (e.g., materials that maximize current flow).
- the semiconductor layers 102 a - 102 d and 104 a - 104 d are formed using multiple epitaxial growth operations.
- Each of the semiconductor layers 102 a - 102 d and 104 a - 104 d may be formed using a selective epitaxial growth (SEG) process, a CVD process (e.g., a vapor-phase epitaxy (VPE) process, a low-pressure chemical vapor deposition (LPCVD) process, and/or an ultra-high vacuum CVD (UHV-CVD) process), a molecular beam epitaxy process, one or more other applicable processes, or a combination thereof.
- SEG selective epitaxial growth
- CVD process e.g., a vapor-phase epitaxy (VPE) process, a low-pressure chemical vapor deposition (LPCVD) process, and/or an ultra-high vacuum CVD (UHV-CVD) process
- VPE vapor-phase epitaxy
- LPCVD
- the semiconductor layers 102 a - 102 d and 104 a - 104 d are grown in-situ in the same process chamber. In some embodiments, the growth of the semiconductor layers 102 a - 102 d and 104 a - 104 d are alternately and sequentially performed in the same process chamber to complete the formation of the semiconductor stack. In some embodiments, the vacuum of the process chamber is not broken before the epitaxial growth of the semiconductor stack is accomplished.
- hard mask elements are formed over the semiconductor stack to assist in a subsequent patterning of the semiconductor stack.
- One or more photolithography processes and one or more etching processes are used to pattern the semiconductor stack into fin structures 106 A 1 , 106 A 2 , 106 B 1 , and 106 B 2 , as shown in FIG. 2B in accordance with some embodiments.
- the fin structures 106 A 1 and 106 A 2 are formed over the first region 10
- the fin structures 106 B 1 and 106 B 2 are formed over the second region 20 .
- the fin structures 106 A 1 , 106 A 2 , 106 B 1 , and 106 B 2 may be patterned by any suitable method.
- the fin structures 106 A 1 , 106 A 2 , 106 B 1 , and 106 B 2 may be patterned using one or more photolithography processes, including double-patterning or multi-patterning processes. Double-patterning or multi-patterning processes may combine photolithography and self-aligned processes, allowing patterns to be created that have, for example, pitches smaller than what is otherwise obtainable using a single, direct photolithography process.
- Each of the fin structures 106 A 1 , 106 A 2 , 106 B 1 , and 106 B 2 may include portions of the semiconductor layers 102 a - 102 d and 104 a - 104 d and semiconductor fin 101 A 1 , 101 A 2 , 101 B 1 or 101 B 2 .
- the semiconductor substrate 100 may also be partially removed during the etching process that forms the fin structures 106 A 1 , 106 A 2 , 106 B 1 , and 106 B 2 . Protruding portions of the semiconductor substrate 100 that remain form the semiconductor fins 101 A 1 , 101 A 2 , 101 B 1 and 101 B 2 , as shown in FIG. 2B .
- Each of the hard mask elements may include a first mask layer 108 and a second mask layer 110 .
- the first mask layer 108 and the second mask layer 110 may be made of different materials.
- the first mask layer 108 is made of a material that has good adhesion to the semiconductor layer 104 d .
- the first mask layer 108 may be made of silicon oxide, germanium oxide, silicon germanium oxide, one or more other suitable materials, or a combination thereof.
- the second mask layer 110 is made of a material that has good etching selectivity to the semiconductor layers 102 a - 102 d and 104 a - 104 d .
- the second layer 110 may be made of silicon nitride, silicon oxynitride, silicon carbide, one or more other suitable materials, or a combination thereof.
- FIGS. 1A-1B are top views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments.
- the fin structures 106 A 1 , 106 A 2 , 106 B 1 and 106 B 2 are oriented lengthwise.
- the extending directions of the fin structures 106 A 1 , 106 A 2 , 106 B 1 and 106 B 2 are substantially parallel to each other, as shown in FIG. 1A .
- FIG. 2B is a cross-sectional view of the structure taken along the lines 2 B- 2 B and 2 B′- 2 B′in FIG. 1A .
- an isolation structure 114 is formed to surround lower portions of the fin structures 106 A 1 , 106 A 2 , 106 B 1 and 106 B 2 , in accordance with some embodiments.
- one or more dielectric layers are deposited over the fin structures 106 A 1 , 106 A 2 , 106 B 1 and 106 B 2 and the semiconductor substrate 100 to overfill the trenches 112 .
- the dielectric layers may be made of silicon oxide, silicon oxynitride, borosilicate glass (BSG), phosphoric silicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), low-k material, porous dielectric material, one or more other suitable materials, or a combination thereof.
- the dielectric layers may be deposited using a flowable chemical vapor deposition (FCVD) process, an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, one or more other applicable processes, or a combination thereof.
- FCVD flowable chemical vapor deposition
- ALD atomic layer deposition
- CVD chemical vapor deposition
- a planarization process is used to partially remove the dielectric layers.
- the hard mask elements including the first mask layer 108 and the second mask layer 110 ) may also function as a stop layer of the planarization process.
- the planarization process may include a chemical mechanical polishing (CMP) process, a grinding process, a dry polishing process, an etching process, one or more other applicable processes, or a combination thereof.
- CMP chemical mechanical polishing
- one or more etching back processes are used to partially remove the dielectric layers.
- the remaining portion of the dielectric layers forms the isolation structure 114 .
- Upper portions of the fin structures 106 A 1 , 106 A 2 , 106 B 1 and 106 B 2 protrude from the top surface of the isolation structure 114 , as shown in FIG. 2C .
- the etching back process for forming the isolation structure 114 is carefully controlled to ensure that the topmost surface of the isolation structure 114 is positioned at a suitable height level, as shown in FIG. 2C .
- the topmost surface of the isolation structure 114 is below the topmost surface of the semiconductor layer 104 a (that functions as a base layer) and above the bottommost surface of the semiconductor layer 104 a.
- the hard mask elements (including the first mask layer 108 and the second mask layer 110 ) are removed. Alternatively, in some other embodiments, the hard mask elements are removed or consumed during the planarization process and/or the etching back process that forms the isolation structure 114 .
- FIG. 2D is a cross-sectional view of the structure taken along the lines 2 D- 2 D and 2 D′- 2 D′ in FIG. 1B .
- FIGS. 3A-3K are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments.
- FIG. 3A is a cross-sectional view of the structure taken along the lines 3 A- 3 A and 3 A′- 3 A′ in FIG. 1B .
- the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 are formed to partially cover and to extend across the fin structures 106 A 1 , 106 A 2 , 106 B 1 and 106 B 2 , in accordance with some embodiments.
- the dummy gate stacks 120 A 1 and 120 A 2 wraps around the fin structures 106 A 1 and 106 A 2 .
- the dummy gate stacks 120 B 1 and 120 B 2 wraps around the fin structures 106 B 1 and 106 B 2 .
- the dummy gate stack 120 A 2 extends across and wraps around the fin structures 106 A 1 and 106 A 2
- the dummy gate stack 120 B 2 extends across and wraps around the fin structures 106 B 1 and 106 B 2 .
- the device formed over the second region 20 has a longer channel width than the device formed over the first region 10 .
- the device formed over the first region 10 has a channel width L SC
- the device formed over the second region 20 has a channel width L LC .
- the channel width L LC is longer than the channel width L SC .
- the channel width L sc may be in a range from about 10 nm to about 30 nm.
- the channel width L LC may be in a range from about 35 nm to about 300 nm.
- the pitch P LC between the dummy gate stacks 120 B 1 and 120 B 2 is longer than the pitch P SC between the dummy gate stacks 120 A 1 and 120 A 2 .
- each of the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 includes a dummy gate dielectric layer 116 and a dummy gate electrode 118 .
- the dummy gate dielectric layers 116 may be made of or include silicon oxide.
- the dummy gate electrodes 118 may be made of or include polysilicon.
- a dummy gate dielectric material layer and a dummy gate electrode layer are sequentially deposited over the isolation feature 114 and the fin structures 106 A 1 , 106 A 2 , 106 B 1 and 106 B 2 .
- the dummy gate dielectric material layer may be deposited using an ALD process, a CVD process, one or more other applicable processes, or a combination thereof.
- the dummy gate electrode layer may be deposited using a CVD process. Afterwards, the dummy gate dielectric material layer and the dummy gate electrode layer are patterned to form the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 .
- hard mask elements including mask layers 122 and 124 are used to assist in the patterning process for forming the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 .
- the hard mask elements as an etching mask, one or more etching processes are used to partially remove the dummy gate dielectric material layer and the dummy gate electrode layer.
- remaining portions of the dummy gate dielectric material layer and the dummy gate electrode layer form the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 that include the dummy gate dielectric layer 116 and the dummy gate electrodes 118 .
- spacer layers 126 and 128 are afterwards deposited over the structure shown in FIG. 3A , in accordance with some embodiments.
- the spacer layers 126 and 128 extend along the sidewalls of the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 .
- the spacer layers 126 and 128 are made of different materials.
- the spacer layer 126 may be made of a dielectric material that has a low dielectric constant.
- the spacer layer 126 may be made of or include silicon carbide, silicon oxycarbide, silicon oxide, one or more other suitable materials, or a combination thereof.
- the spacer layer 128 may be made of a dielectric material that can provide more protection to the gate stacks during subsequent processes.
- the spacer layer 128 may have a greater dielectric constant than that of the spacer layer 126 .
- the spacer layer 128 may be made of silicon nitride, silicon oxynitride, carbon-containing silicon nitride, carbon-containing silicon oxynitride, one or more other suitable materials, or a combination thereof.
- the spacer layers 126 and 128 may be sequentially deposited using a CVD process, an ALD process, a physical vapor deposition (PVD) process, one or more other applicable processes, or a combination thereof.
- the spacer layers 126 and 128 are partially removed, in accordance with some embodiments.
- One or more anisotropic etching processes may be used to partially remove the spacer layers 126 and 128 .
- remaining portions of the spacer layers 126 and 128 form gate spacers 126 ′ and 128 ′, respectively.
- the gate spacers 126 ′ and 128 ′ extend along the sidewalls of the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 , as shown in FIG. 3C .
- the fin structures 106 A 1 , 106 A 2 , 106 B 1 and 106 B 2 are partially removed to form recesses 130 that are used to contain epitaxial structures (such as source/drain structures) that will be formed later.
- the recesses 130 expose the side surfaces of the semiconductor layers 102 a - 102 d and 104 a - 104 d .
- the fin structures 106 A 1 and 106 B 1 are partially removed to form some of the recesses 130 , in accordance with some embodiments.
- One or more etching processes may be used to form the recesses 130 .
- a dry etching process is used to form the recesses 130 .
- each of the recesses 130 penetrates into the fin structure 106 A 1 or 106 B 1 .
- the recesses 130 further extend into the semiconductor fin 101 A 1 or 101 B 1 , as shown in FIG. 3C .
- the gate spacers 126 ′ and 128 ′ and the recesses 130 are simultaneously formed using the same etching process.
- each of the recesses 130 has slanted sidewalls. Upper portions of the recesses 130 are larger (or wider) than lower portions of the recesses 130 . In these cases, due to the profile of the recesses 130 , an upper semiconductor layer (such as the semiconductor layer 104 d ) is shorter than a lower semiconductor layer (such as the semiconductor layer 104 b ).
- the recesses 130 have substantially vertical sidewalls. In these cases, due to the profile of the recesses 130 , an upper semiconductor layer (such as the semiconductor layer 104 d ) is substantially as wide as a lower semiconductor layer (such as the semiconductor layer 104 b ).
- the semiconductor layers 102 b - 102 d are laterally etched, in accordance with some embodiments. As a result, edges of the semiconductor layers 102 b - 102 d retreat from edges of the semiconductor layers 104 a - 104 d . As shown in FIG. 3D , recesses 132 are formed due to the lateral etching of the semiconductor layers 102 b - 102 d . The recesses 132 may be used to contain inner spacers that will be formed later.
- the semiconductor layers 102 b - 102 d may be laterally etched using a wet etching process, a dry etching process, or a combination thereof. In some other embodiments, the semiconductor layers 102 b - 102 d are partially oxidized before being laterally etched.
- the semiconductor layer 102 a is also etched during the formation of the recesses 132 .
- the semiconductor layer 102 a has a greater atomic concentration of germanium than that of the semiconductor layer 102 b , 102 c , or 102 d .
- the semiconductor layer 102 a is thicker than the semiconductor layer 102 b , 102 c , or 102 d . As a result, the semiconductor layer 102 a is etched or oxidized at a greater rate than the semiconductor layers 102 b - 102 d.
- the semiconductor layers 102 a is completely removed during the formation the recesses 132 .
- through holes 302 are formed between the semiconductor fin 101 A 1 and the semiconductor layer 104 a and between the semiconductor fin 101 B 1 and the semiconductor layer 104 a , as shown in FIG. 3D in accordance with some embodiments. Due to the support of the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 (as shown in FIG. 2E ), the fin structure 106 A 1 , 106 A 2 , 106 B 1 and 106 B 2 are prevented from falling down even if the semiconductor layer 102 a is removed.
- the through holes 302 may be used to contain insulating structures that will be formed later.
- the semiconductor layers 104 a - 104 d may also be slightly etched. As a result, edge portions of the semiconductor layers 104 a - 104 d are partially etched and thus shrink to become edge elements 105 a - 105 d , as shown in FIG. 3D . As shown in FIG. 3D , each of the edge elements 105 a - 105 d of the semiconductor layers 104 a - 104 d is thinner than the respective inner portion of the semiconductor layers 104 a - 104 d.
- an insulating layer 134 is deposited over the structure shown in FIG. 3D , in accordance with some embodiments.
- the insulating layer 134 covers the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 and fills the recesses 132 and the through holes 302 .
- the insulating layer 134 may be made of or include carbon-containing silicon nitride (SiCN), carbon-containing silicon oxynitride (SiOCN), carbon-containing silicon oxide (SiOC), silicon oxide, silicon nitride, one or more other suitable materials, or a combination thereof.
- the insulating layer 134 is a single layer.
- the insulating layer 134 includes multiple sub-layers. Some of the sub-layers may be made of different materials and/or contain different compositions.
- the insulating layer 134 may be deposited using a CVD process, an ALD process, one or more other applicable processes, or a combination thereof.
- an etching process is used to partially remove the insulating layer 134 , in accordance with some embodiments.
- the remaining portions of the insulating layer 134 form inner spacers 136 and insulating structures 304 , as shown in FIG. 3F .
- the etching process may include a dry etching process, a wet etching process, or a combination thereof.
- the inner spacers 136 and the insulating structures 304 are portions of the insulating layer 134 , the inner spacers 136 and the insulating structures 304 are made of the same material, in accordance with some embodiments. However, embodiments of the disclosure are not limited thereto. In some other embodiments, the inner spacers 136 and the insulating structures 304 are formed separately from different insulating layers. In these cases, the inner spacers 136 and the insulating structures 304 may be made of different materials.
- the insulating structures 304 may be made of or include a low-k material (such as silicon oxide, SiN, SiCN, SiOC, and/or SiOCN), a high-k material (such as hafnium oxide, zirconium oxide, zirconium aluminum oxide, hafnium aluminum oxide, hafnium silicon oxide, and/or aluminum oxide), one or more other suitable materials (such as TiO, TaO, LaO, YO, TaCN, and/or ZrN), or a combination thereof.
- a low-k material such as silicon oxide, SiN, SiCN, SiOC, and/or SiOCN
- a high-k material such as hafnium oxide, zirconium oxide, zirconium aluminum oxide, hafnium aluminum oxide, hafnium silicon oxide, and/or aluminum oxide
- suitable materials such as TiO, TaO, LaO, YO, TaCN, and/or ZrN
- the inner spacers 136 cover the edges of the semiconductor layers 102 b - 102 d that are originally exposed by the recesses 132 .
- the inner spacers 136 may be used to prevent subsequently formed epitaxial structures (that function as, for example, source/drain structures) from being damaged during a subsequent process for removing the sacrificial layers 102 b - 102 d .
- the inner spacers 136 are made of a low-k material that has a lower dielectric constant than that of silicon oxide. In these cases, the inner spacers 136 may also be used to reduce parasitic capacitance between the subsequently formed source/drain structures and the gate stacks. As a result, the operation speed of the semiconductor device structure may be improved.
- portions of the semiconductor fins 101 A 1 and 101 B 1 originally covered by the insulating layer 134 are exposed by the recesses 130 , as shown in FIG. 3F .
- the edges of the semiconductor layers 104 a - 104 d are also exposed by the recesses 130 , as shown in FIG. 3F .
- epitaxial structures 138 are formed beside the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 , in accordance with some embodiments.
- the epitaxial structures 138 fill the recesses 130 , as shown in FIG. 3G .
- the epitaxial structures 138 overfill the recesses 130 .
- the top surfaces of the epitaxial structures 138 are higher than the top surface of the dummy gate dielectric layer 116 .
- the epitaxial structures 138 partially fill the recesses 130 .
- the epitaxial structures 138 connect to the semiconductor layers 104 b - 104 d . Each of the semiconductor layers 104 b - 104 d is sandwiched between the epitaxial structures 138 .
- the epitaxial structures 138 function as source/drain structures.
- the epitaxial structures 138 are p-type doped regions.
- the epitaxial structures 138 may include epitaxially grown silicon germanium (SiGe), epitaxially grown silicon, or another suitable epitaxially grown semiconductor material.
- the epitaxial structures 138 are n-type doped regions.
- the epitaxial structures 138 may include epitaxially grown silicon, epitaxially grown silicon carbide (SiC), epitaxially grown germanium, or another suitable epitaxially grown semiconductor material.
- the epitaxial structures 138 are formed using a selective epitaxial growth (SEG) process, a CVD process (e.g., a vapor-phase epitaxy (VPE) process, a low-pressure chemical vapor deposition (LPCVD) process, and/or an ultra-high vacuum CVD (UHV-CVD) process), a molecular beam epitaxy process, one or more other applicable processes, or a combination thereof.
- SEG selective epitaxial growth
- CVD process e.g., a vapor-phase epitaxy (VPE) process, a low-pressure chemical vapor deposition (LPCVD) process, and/or an ultra-high vacuum CVD (UHV-CVD) process
- VPE vapor-phase epitaxy
- LPCVD low-pressure chemical vapor deposition
- UHV-CVD ultra-high vacuum CVD
- the epitaxial structures 138 are doped with one or more suitable p-type dopants.
- the epitaxial structures 138 are SiGe source/drain features or Si source/drain features that are doped with boron (B), gallium (Ga), indium (In), or another suitable dopant.
- the epitaxial structures 138 are doped with one or more suitable n-type dopants.
- the epitaxial structures 138 are Si source/drain features doped with phosphor (P), antimony (Sb), or another suitable dopant.
- the epitaxial structures 138 are doped in-situ during their epitaxial growth.
- the initial reaction gas mixture for forming the epitaxial structures 138 contains dopants.
- the epitaxial structures 138 are not doped during the growth of the epitaxial structures 138 . Instead, after the formation of the epitaxial structures 138 , the epitaxial structures 138 are doped in a subsequent process.
- the doping is achieved by using an ion implantation process, a plasma immersion ion implantation process, a gas and/or solid source diffusion process, one or more other applicable processes, or a combination thereof.
- the epitaxial structures 138 are further exposed to one or more annealing processes to activate the dopants. For example, a rapid thermal annealing process is used.
- a contact etch stop layer 139 and a dielectric layer 140 are formed to cover the epitaxial structures 138 and to surround the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 , in accordance with some embodiments.
- the contact etch stop layer 139 may be made of or include silicon nitride, silicon oxynitride, silicon carbide, aluminum oxide, one or more other suitable materials, or a combination thereof.
- the dielectric layer 140 may be made of or include silicon oxide, silicon oxynitride, borosilicate glass (BSG), phosphoric silicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), low-k material, porous dielectric material, one or more other suitable materials, or a combination thereof.
- BSG borosilicate glass
- PSG phosphoric silicate glass
- BPSG borophosphosilicate glass
- FSG fluorinated silicate glass
- low-k material porous dielectric material, one or more other suitable materials, or a combination thereof.
- an etch stop material layer and a dielectric material layer are sequentially deposited over the structure shown in FIG. 3G .
- the etch stop material layer may be deposited using a CVD process, an ALD process, a PVD process, one or more other applicable processes, or a combination thereof.
- the dielectric material layer may be deposited using an FCVD process, a CVD process, an ALD process, one or more other applicable processes, or a combination thereof.
- a planarization process is used to partially remove the etch stop material layer and the dielectric material layer. As a result, the remaining portions of the etch stop material layer and the dielectric material layer respectively form the contact etch stop layer 139 and the dielectric layer 140 , as shown in FIG. 3H .
- the planarization process may include a CMP process, a grinding process, an etching process, a dry polishing process, one or more other applicable processes, or a combination thereof.
- the mask layers 122 and 124 used for defining the dummy gate stacks 120 A 1 , 120 A 2 , 120 B 1 , and 120 B 2 are also removed during the planarization process.
- the top surfaces of the contact etch stop layer 139 , the dielectric layer 140 , and the dummy gate electrodes 118 are substantially level with each other.
- protective caps 141 are formed over the dielectric layer 140 , in accordance with some embodiments.
- the protective caps 141 may be used to protect the dielectric layer 140 thereunder.
- the dielectric layer 140 may be protected during the subsequent processes such as a subsequent metal gate etching back process.
- the dielectric layer 140 may thus be kept with a suitable thickness.
- the protective caps 141 may be made of or include SiN, SiCN, SiOC, SiOCN, SiC, SiON, AlO, AlN, AlON, ZrO, ZrN, ZrAlO, HfO, one or more other suitable materials, or a combination thereof.
- the dielectric layer 140 is partially removed using one or more etching processes. As a result, recesses are formed over the remaining dielectric layer 140 . Afterwards, a protective layer is formed to overfill the recesses.
- the protective layer may be formed using a CVD process, an ALD process, one or more other applicable processes, or a combination thereof.
- a planarization process is then used to remove the portion of the protective layer outside of the recesses. As a result, the remaining portions of the protective layer within the recesses form the protective caps 141 .
- the planarization process may include a CMP process, an etching process, a grinding process, a dry polishing process, one or more other applicable processes, or a combination thereof.
- one or more etching processes are used to remove the dummy gate electrodes 118 to form trenches 142 , in accordance with some embodiments.
- the trenches 142 are surrounded by the dielectric layer 140 .
- the trenches 142 expose the dummy gate dielectric layer 116 .
- Each of the trenches 142 formed over the second region 20 is wider than each of the trenches 142 formed over the first region 10 .
- the dielectric layer 140 is protected by the protective caps 141 .
- the dummy gate dielectric layer 116 and the semiconductor layers 102 b - 102 d are removed, in accordance with some embodiments.
- an etching process is used to remove the semiconductor layers 102 b - 102 d .
- recesses 144 are formed, as shown in FIG. 3K .
- the semiconductor layers 104 a - 104 d are slightly (or substantially not) etched.
- the remaining portions of the semiconductor layers 104 b - 104 d form multiple semiconductor nanostructures 104 b ′- 104 d ′ of the fin structures 106 A 1 and 106 B 1 , as shown in FIG. 3K .
- the semiconductor nanostructures 104 b ′- 104 d ′ are constructed by or made up of the remaining portions of the semiconductor layers 104 b - 104 d .
- the semiconductor nanostructures 104 b ′- 104 d ′ suspended over the semiconductor fin 101 A 1 or 101 B 1 may function as channel structures of transistors.
- each of the semiconductor nanostructures 104 b ′- 104 d ′ formed over the second region 20 is longer than each of the semiconductor nanostructures 104 b ′- 104 d ′ formed over the first region 10 .
- the etchant used for removing the semiconductor layers 102 b - 102 d also slightly removes the semiconductor layers 104 a - 104 d that form the semiconductor nanostructures 104 a ′- 104 d ′. As a result, the obtained semiconductor nanostructures 104 a ′- 104 d ′ become thinner after the removal of the semiconductor layers 102 b - 102 d . As shown in FIG.
- each of the semiconductor nanostructures 104 b ′- 104 d ′ is thinner than the edge portions 105 b - 105 d since the edge portions 105 b - 105 d are surrounded by other elements and thus are prevented from being reached and etched by the etchant, in accordance with some embodiments.
- the etchant used for removing the semiconductor layers 102 b - 102 d slightly (or substantially not) etches the semiconductor layer 104 a .
- the base structures 104 a ′ also function as channel structures.
- the base structures 104 a ′ do not function as channel structures.
- the base structures 104 a ′ and the insulating structures 304 may also be used to increase physical distance between subsequently formed metal gate stacks and backside conductive contacts (if formed). Short circuiting between the metal gate stacks and the backside conductive contacts may be prevented.
- the recesses 144 are formed.
- the recesses 144 connect to the trench 142 and surround each of the semiconductor nanostructures 104 b ′- 104 d ′.
- the semiconductor nanostructures 104 b ′- 104 d ′ remain being held by the epitaxial structures 138 . Therefore, after the removal of the semiconductor layers 102 b - 102 d (that function as sacrificial layers), the released semiconductor nanostructures 104 b ′- 104 d ′ are prevented from falling down.
- the inner spacers 136 protect the epitaxial structures 138 from being etched or damaged. The quality and reliability of the semiconductor device structure are improved.
- the dielectric layer 140 is protected by the protective caps 141 , which maintains the dielectric layer 140 with a suitable thickness.
- the gate spacers 126 ′ and 128 ′ are partially removed, in accordance with some embodiments. Upper portions of the gate spacers 126 ′ and 128 ′ may be removed. As a result, upper portions of the trenches 142 become wider or larger, which facilitates subsequent processes such as a subsequent filling process for forming metal gate stacks and a subsequent etching back process of the metal gate stacks. One or more etching processes may be used to partially remove the gate spacers 126 ′ and 128 ′.
- multiple metal gate stack layers are deposited over the structure shown in FIG. 3L , in accordance with some embodiments.
- the metal gate stack layers in the trenches 142 formed over the first region 10 merge together and completely fill the respective trenches 142 .
- the metal gate stack layers partially fill the trenches 142 formed over the second region 20 since the trenches 142 over the second region 20 are wider.
- the metal gate stack layers extend into the recesses 144 to wrap around each of the semiconductor nanostructures 104 b ′- 104 d ′, as shown in FIG. 3M .
- the metal gate stack layers over the first region 10 and the second region 20 are simultaneously formed using the same deposition processes. First portions of the metal gate stack layers are formed in the trenches 142 over the first region 10 , and second portions of the metal gate stack layers are formed in the trenches 142 over the second region 20 .
- the metal gate stack layers may include a gate dielectric layer 150 , a work function layer 152 , and a conductive layer 154 .
- the conductive layer 154 may function as a conductive filling layer that completely fills the remaining space of the trenches 142 over the first region 10 . In some embodiments, since the trenches 142 over the second region 20 (i.e., a long channel region) are wider, the conductive layer 154 cannot completely fills the trenches 142 over the second region 20 .
- the gate dielectric layer 150 is made of or includes a dielectric material with high dielectric constant (high-K).
- the gate dielectric layer 150 may be made of or include hafnium oxide, zirconium oxide, aluminum oxide, hafnium dioxide-alumina alloy, hafnium silicon oxide, hafnium silicon oxynitride, hafnium tantalum oxide, hafnium titanium oxide, hafnium zirconium oxide, one or more other suitable high-K materials, or a combination thereof.
- the gate dielectric layer 150 may be deposited using an ALD process, a CVD process, one or more other applicable processes, or a combination thereof.
- an interfacial layers are formed on the surfaces of the semiconductor nanostructures 104 b ′- 104 d ′ and the base structures 104 a ′.
- the interfacial layers are very thin and are made of, for example, silicon oxide or germanium oxide.
- the interfacial layers are formed by applying an oxidizing agent on the surfaces of the semiconductor nanostructures 104 b ′- 104 d ′ and the base structures 104 a ′.
- a hydrogen peroxide-containing liquid may be applied or provided on the surfaces of the semiconductor nanostructures 104 b ′- 104 d ′ and the base structures 104 a ′, so as to form the interfacial layers.
- the work function layer 152 may be used to provide the desired work function for transistors to enhance device performance including improved threshold voltage. In some embodiments, the work function layer 152 is used for forming a PMOS device.
- the work function layer 152 is a p-type work function layer.
- the p-type work function layer is capable of providing a work function value suitable for the device, such as equal to or greater than about 4.8 eV.
- the p-type work function layer may include metal, metal carbide, metal nitride, other suitable materials, or a combination thereof.
- the p-type metal includes tantalum nitride, tungsten nitride, titanium, titanium nitride, one or more other suitable materials, or a combination thereof.
- the work function layer 152 is used for forming an NMOS device.
- the work function layer 152 is an n-type work function layer.
- the n-type work function layer is capable of providing a work function value suitable for the device, such as equal to or less than about 4.5 eV.
- the n-type work function layer may include metal, metal carbide, metal nitride, or a combination thereof.
- the n-type work function layer includes titanium nitride, tantalum, tantalum nitride, one or more other suitable materials, or a combination thereof.
- the n-type work function layer is an aluminum-containing layer.
- the aluminum-containing layer may be made of or include TiAlC, TiAlO, TiAlN, one or more other suitable materials, or a combination thereof.
- the work function layer 152 may also be made of or include hafnium, zirconium, titanium, tantalum, aluminum, metal carbides (e.g., hafnium carbide, zirconium carbide, titanium carbide, aluminum carbide), aluminides, ruthenium, palladium, platinum, cobalt, nickel, conductive metal oxides, or a combinations thereof.
- the thickness and/or the compositions of the work function layer 152 may be fine-tuned to adjust the work function level.
- the work function layer 152 may be deposited over the gate dielectric layer 150 using an ALD process, a CVD process, a PVD process, an electroplating process, an electroless plating process, one or more other applicable processes, or a combination thereof.
- a barrier layer is formed before the work function layer 152 to interface the gate dielectric layer 150 with the subsequently formed work function layer 152 .
- the barrier layer may also be used to prevent diffusion between the gate dielectric layer 150 and the subsequently formed work function layer 152 .
- the barrier layer may be made of or include a metal-containing material.
- the metal-containing material may include titanium nitride, tantalum nitride, one or more other suitable materials, or a combination thereof.
- the barrier layer may be deposited using an ALD process, a CVD process, a PVD process, an electroplating process, an electroless plating process, one or more other applicable processes, or a combination thereof.
- the conductive layer 154 is made of or includes a metal material.
- the metal material may include tungsten, ruthenium, aluminum, copper, cobalt, titanium, one or more other suitable materials, or a combination thereof.
- the conductive layer 154 may be deposited over the work function layer 152 using a CVD process, an ALD process, a PVD process, an electroplating process, an electroless plating process, a spin coating process, one or more other applicable processes, or a combination thereof.
- a blocking layer is formed over the work function layer 152 before the formation of the conductive layer 154 .
- the blocking layer may be used to prevent the subsequently formed conductive layer 154 from diffusing or penetrating into the work function layer 152 .
- the blocking layer may be made of or include tantalum nitride, titanium nitride, one or more other suitable materials, or a combination thereof.
- the blocking layer may be deposited using an ALD process, a PVD process, an electroplating process, an electroless plating process, one or more other applicable processes, or a combination thereof.
- the conductive layer 154 does not extend into the recesses 144 since the recesses 144 are small and have been filled with other elements such as the gate dielectric layer 150 and the work function layer 152 .
- embodiments of the disclosure are not limited thereto.
- a portion of the conductive filling extends into the recesses 144 with larger space, such as the lower recesses 144 over the second region 20 .
- one or more etching processes are used to partially remove the metal gate stack layers, in accordance with some embodiments.
- the metal gate stack layers outside of the trenches 142 are thus removed.
- the portions of the metal gate stack layers in the trenches 142 over the second region 20 are trimmed. As a result, the remaining portions of the metal gate stack layers form metal gate stacks 156 A 1 , 156 A 2 , 156 B 1 , and 156 B 2 , as shown in FIG. 3N .
- the conductive layer 154 in the trenches 142 over the second region 20 is partially removed from the surface of the conductive layer 154 exposed by the trenches 142 and thus becomes thinner, as shown in FIG. 3N . Due to the partial removal of the metal gate stack layers, larger space is created in the trenches 142 over the second region 20 , which facilitates a subsequent formation of protective structures in the respective trenches 142 .
- a top portion of the metal gate stack layers in the trench 142 over the first region 10 has a first width W A .
- a top portion of the metal gate stack layers in the trench 142 over the second region 20 has a second width W B .
- half (i.e., the width W C ) of the first width W A is greater than the second width W B .
- Half of the first width W A i.e., the width W C
- the second width W B may be in a range from about 3 nm to about 12 nm.
- a protective layer is deposited over the dielectric layer 140 and the metal gate stacks 156 A 1 , 156 A 2 , 156 B 1 , and 156 B 2 , in accordance with some embodiments.
- the protective layer overfills the trenches 142 over the second region 20 .
- the protective layer may be made of or include SiN, SiCN, SiOC, SiOCN, SiC, SiON, SiO, AlO, AlN, AlON, ZrO, ZrN, ZrAlO, HfO, one or more other suitable materials, or a combination thereof.
- the protective layer may be deposited using a CVD process, an ALD process, an FCVD process, one or more other applicable processes, or a combination thereof.
- a planarization process is performed to remove the portions of the protective layer outside of the trenches 142 .
- the remaining portions of the protective layer form protective structures 158 over the metal gate stacks 156 B 1 and 156 B 2 , as shown in FIG. 3O in accordance with some embodiments.
- the planarization process may include a CMP process, an etching process, a grinding process, a dry polishing process, one or more other applicable processes, or a combination thereof. Because the conductive layer 154 of the metal gate stacks 156 B 1 and 156 B 2 is partially removed to become thinner, more available space is provided for the formation of the protective structures 158 .
- Each of the protective structures 158 may thus have a sufficient size and strength to sustain the subsequent processes including a subsequent metal gate etching back process.
- the metal gate stacks 156 A 1 , 156 A 2 , 156 B 1 , and 156 B 2 are partially removed to form recesses 159 A and 159 B, in accordance with some embodiments.
- One or more etching processes may be used to etch back the metal gate stacks 156 A 1 , 156 A 2 , 156 B 1 , and 156 B 2 .
- each of the metal gate stacks 156 A 1 , 156 A 2 , 156 B 1 , and 156 B 2 is lower than the tops of the gate spacers 126 ′ and 128 ′, as shown in FIG. 3P .
- the tops of the gate spacers 126 ′ and 128 ′ are higher than the tops of the metal gate stacks 156 A 1 , 156 A 2 , 156 B 1 , and 156 B 2 .
- each of the protective structures 158 may have a sufficient size. The adhesion between the protective structures 158 and the neighboring elements is enhanced. The protective structures 158 are prevented from the peeling issue and/or the collapse issue even if the metal gate stacks 156 B 1 and 156 B 2 are etched back.
- protective structures 160 A are formed over the metal gate stacks 156 A 1 and 156 A 2
- protective structures 160 B are formed over the metal gate stacks 156 B 1 and 156 B 2 , in accordance with some embodiments.
- the protective structures 158 , 160 A, and 160 B may be used to protect the metal gate stacks thereunder. The protected metal gate stacks may thus be prevented from being damaged during the subsequent processes such as a subsequent contact formation process.
- Each of the protective structures 160 B extends along the sidewall of the nearby protective structure 158 .
- each of the protective structures 160 B is in direct contact with the nearby protective structure 158 .
- each of the protective structures 160 B is in direct contact with the nearby protective structure 158 , the nearby gate spacers 126 ′ and 128 ′, and the nearby metal gate stack 156 B 1 or 156 B 2 .
- the bottommost surface of the protective structure 158 is lower than the bottommost surface of the protective structure 160 B or the topmost surface of the metal gate stack 156 B 1 or 156 B 2 .
- the protective structures 160 A and the protective structures 160 B are made of the same material. In some embodiments, the protective structures 160 A and the protective structures 160 B are formed simultaneously. In some other embodiments, the protective structures 160 A and the protective structures 160 B are formed separately. In these cases, the protective structures 160 A and the protective structures 160 B may be made of different materials.
- the protective structures 160 B may be made of a dielectric material that has a better filling ability than that of the material used for forming the protective structures 160 A.
- the protective structures 160 B (or 160 A) and the protective structures 158 are made of the same material. In some other embodiments, the protective structures 160 B (or 160 A) and the protective structures 158 are made of different materials.
- a protective layer is deposited over the structure shown in FIG. 30 to overfill the recesses 159 A and 159 B, in accordance with some embodiments.
- the protective layer may be made of or include SiN, SiCN, SiOC, SiOCN, SiC, SiON, SiO, AlO, AN, AlON, ZrO, ZrN, ZrAlO, HfO, one or more other suitable materials, or a combination thereof.
- the protective layer may be deposited using a CVD process, an ALD process, an FCVD process, one or more other applicable processes, or a combination thereof.
- a planarization process is performed to remove the portions of the protective layer outside of the recesses 159 A and 159 B. As a result, the remaining portions of the protective layer form the protective structures 160 A and 160 B, as shown in FIG. 3Q in accordance with some embodiments.
- the planarization process may include a CMP process, an etching process, a grinding process, a dry polishing process, one or more other applicable processes, or a combination thereof.
- the metal gate stack 156 A 1 has a width W 1 .
- the metal gate stack 156 B 1 has a protruding portion that extends away from the semiconductor nanostructures 104 b ′- 104 d ′ along the nearby gate spacer 126 ′, and the portion of the metal gate stack 156 B 1 has a width W 2 .
- half (i.e., the width W 3 ) of the width W 1 is greater than the width W 2 .
- the conductive layer 154 of the metal gate stack 156 A 1 or 156 A 2 is thicker than the conductive layer 154 of the metal gate stack 156 B 1 or 156 B 2 .
- embodiments of the disclosure are not limited thereto. Many variations and/or modifications can be made to embodiments of the disclosure.
- the metal gate stacks over the first region 10 include the conductive layer 154
- the metal gate stacks over the second region 10 do not include the conductive layer 154 .
- FIGS. 4A-4C are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments.
- a structure the same as or similar to the structure shown in FIG. 3M is formed.
- the metal gate stack layers are partially removed.
- the conductive layer 154 originally formed over the second region 20 is completely removed, as shown in FIG. 4B .
- the work function layer 152 that is originally covered by the conductive layer 154 ) is exposed.
- the processes similar to those illustrated in FIGS. 30-3Q are performed, in accordance with some embodiments.
- the structure shown in FIG. 4C is formed.
- the protective structures 158 are in direct contact with the nearby work function layer 152 .
- the total number of the semiconductor nanostructures is greater than four. In some other embodiments, the total number of the semiconductor nanostructures is smaller than four.
- the total number of the semiconductor nanostructures (or channel structures) of each semiconductor device structure may be fine-tuned to meet requirements. For example, the total number of the semiconductor nanostructures may be 3 to 8.
- the semiconductor nanostructures may have many applicable profiles.
- the semiconductor nanostructures may include nanosheets, nanowires, or other suitable nanostructures.
- Embodiments of the disclosure form a semiconductor device structure with a first metal gate stack and a second metal gate stack over a short channel device and a long channel device, respectively.
- the second metal gate stack is wider than the first metal gate stack.
- the second metal gate stack is trimmed to be thinner to provide larger space for containing the protective structure.
- the protective structures may thus have a sufficient size to provide larger contact area with the neighboring elements. The adhesion between the protective structures and the neighboring elements is enhanced.
- the protective structures may be prevented from the peeling issue and/or the collapse issue even if the second metal gate stack is etched back during a subsequent process. The performance and reliability of the semiconductor device structure are thus greatly improved.
- a semiconductor device structure includes a first channel structure and a second channel structure over a substrate. The second channel structure is longer than the first channel structure.
- the semiconductor device structure also includes a first gate stack over the first channel structure, and the first gate stack has a first width.
- the semiconductor device structure further includes a first gate spacer extending along a sidewall of the first gate stack.
- the semiconductor device structure includes a second gate stack over the second channel structure and a second gate spacer extending along a sidewall of the second gate stack.
- the second gate stack has a portion extending along the second gate spacer, and the portion of the second gate stack has a second width. Half of the first width is greater than the second width.
- a semiconductor device structure includes a stack of first channel structures and a stack of second channel structures over a substrate.
- the semiconductor device structure also includes a first metal gate stack wrapped around the first channel structures, and the first metal gate stack has a first width.
- the semiconductor device structure further includes a second metal gate stack wrapped around the second channel structures.
- the second gate stack has a protruding portion extending away from the second channel structures.
- the protruding portion of the second metal gate stack has a second width, and half of the first width is greater than the second width.
- a method for forming a semiconductor device structure includes respectively forming a first dummy gate stack and a second dummy gate stack over a first channel structure and a second channel structure.
- the second dummy gate stack is wider than the first dummy gate stack.
- the method also includes forming a dielectric layer to surround the first dummy gate stack and the second dummy gate stack.
- the method further includes removing the first dummy gate stack and the second dummy gate stack to form a first trench and a second trench.
- the method includes forming metal gate stack layers with a first portion in the first trench and a second portion in the second trench.
- the method includes trimming the second portion of the metal gate stack layers in the second trench.
- the method also includes forming a protective structure over the second portion after the second portion is thinned.
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Abstract
Description
- The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs. Each generation has smaller and more complex circuits than the previous generation.
- Over the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased while geometric size (i.e., the smallest component (or line) that can be created using a fabrication process) has decreased. This scaling-down process generally provides benefits by increasing production efficiency and lowering associated costs.
- However, these advances have increased the complexity of processing and manufacturing ICs. Since feature sizes continue to decrease, fabrication processes continue to become more difficult to perform. Therefore, it is a challenge to form reliable semiconductor devices at smaller and smaller sizes.
- Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
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FIGS. 1A-1B are top views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments. -
FIGS. 2A-2D are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments. -
FIGS. 3A-3Q are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments. -
FIGS. 4A-4C are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments. - The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- The term “substantially” in the description, such as in “substantially flat” or in “substantially coplanar”, etc., will be understood by the person skilled in the art. In some embodiments the adjective substantially may be removed. Where applicable, the term “substantially” may also include embodiments with “entirely”, “completely”, “all”, etc. Where applicable, the term “substantially” may also relate to 90% or higher of what is specified, such as 95% or higher, especially 99% or higher, including 100%. Furthermore, terms such as “substantially parallel” or “substantially perpendicular” are to be interpreted as not to exclude insignificant deviation from the specified arrangement and may include for example deviations of up to 10 degrees in some embodiments. The word “substantially” does not exclude “completely” e.g. a composition which is “substantially free” from Y may be completely free from Y in some embodiments.
- Terms such as “about” in conjunction with a specific distance or size are to be interpreted so as not to exclude insignificant deviation from the specified distance or size and may include for example deviations of up to 10% in some embodiments. The term “about” in relation to a numerical value x may mean x±5 or 10% in some embodiments.
- Embodiments of the disclosure may relate to FinFET structure having fins. The fins may be patterned using any suitable method. For example, the fins may be patterned using one or more photolithography processes, including double-patterning or multi-patterning processes. Generally, double-patterning or multi-patterning processes combine photolithography and self-aligned processes, allowing patterns to be created that have, for example, pitches smaller than what is otherwise obtainable using a single, direct photolithography process. For example, in some embodiments, a sacrificial layer is formed over a substrate and patterned using a photolithography process. Spacers are formed alongside the patterned sacrificial layer using a self-aligned process. The sacrificial layer is then removed, and the remaining spacers may then be used to pattern the fins. However, the fins may be formed using one or more other applicable processes.
- Embodiments of the disclosure may relate to the gate all around (GAA) transistor structures. The GAA structure may be patterned using any suitable method. For example, the structures may be patterned using one or more photolithography processes, including double-patterning or multi-patterning processes. In some embodiments, double-patterning or multi-patterning processes combine photolithography and self-aligned processes, allowing patterns to be created that have, for example, pitches smaller than what is otherwise obtainable using a single, direct photolithography process. For example, in some embodiments, a sacrificial layer is formed over a substrate and patterned using a photolithography process. Spacers are formed alongside the patterned sacrificial layer using a self-aligned process. The sacrificial layer is then removed, and the remaining spacers may then be used to pattern the GAA structure.
- Some embodiments of the disclosure are described. Additional operations can be provided before, during, and/or after the stages described in these embodiments. Some of the stages that are described can be replaced or eliminated for different embodiments. Additional features can be added to the semiconductor device structure. Some of the features described below can be replaced or eliminated for different embodiments. Although some embodiments are discussed with operations performed in a particular order, these operations may be performed in another logical order.
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FIGS. 2A-2D are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments. As shown inFIG. 2A , asemiconductor substrate 100 is received or provided. Thesemiconductor substrate 100 has afirst region 10 and asecond region 20. In some embodiments, one or more short channel (SC) devices are to be formed over thefirst region 10. One or more long channel (LC) devices are to be formed over thesecond region 20. In some embodiments, thesemiconductor substrate 100 is a bulk semiconductor substrate, such as a semiconductor wafer. Thesemiconductor substrate 100 may include silicon or other elementary semiconductor materials such as germanium. Thesemiconductor substrate 100 may be un-doped or doped (e.g., p-type, n-type, or a combination thereof). In some embodiments, thesemiconductor substrate 100 includes an epitaxially grown semiconductor layer on a dielectric layer. The epitaxially grown semiconductor layer may be made of silicon germanium, silicon, germanium, one or more other suitable materials, or a combination thereof. - In some other embodiments, the
semiconductor substrate 100 includes a compound semiconductor. For example, the compound semiconductor includes one or more III-V compound semiconductors having a composition defined by the formula AlX1GaX2InX3AsY1PY2NY3SbY4, where X1, X2, X3, Yl, Y2, Y3, and Y4 represent relative proportions. Each of them is greater than or equal to zero, and added together they equal 1. The compound semiconductor may include silicon carbide, gallium arsenide, indium arsenide, indium phosphide, one or more other suitable compound semiconductors, or a combination thereof. Other suitable substrate including II-VI compound semiconductors may also be used. - In some embodiments, the
semiconductor substrate 100 is an active layer of a semiconductor-on-insulator (SOI) substrate. The SOI substrate may be fabricated using a separation by implantation of oxygen (SIMOX) process, a wafer bonding process, another applicable method, or a combination thereof. In some other embodiments, thesemiconductor substrate 100 includes a multi-layered structure. For example, thesemiconductor substrate 100 includes a silicon-germanium layer formed on a bulk silicon layer. - As shown in
FIG. 2A , a semiconductor stack having multiple semiconductor layers is formed over thesemiconductor substrate 100, in accordance with some embodiments. The semiconductor stack covers thefirst region 10 and thesecond region 20 of thesemiconductor substrate 10. In some embodiments, the semiconductor stack includesmultiple semiconductor layers multiple semiconductor layers FIG. 2A . In some embodiments, thesemiconductor layer 102 a is thicker than thesemiconductor layer semiconductor layer 104 a is thicker than thesemiconductor layer - In the present disclosure, the side of the
semiconductor substrate 100 where the semiconductor stack is located is referred to as the frontside. The side opposite to the frontside with respect to thesemiconductor substrate 100 is referred to as the backside. - In some embodiments, the semiconductor layers 102 b-102 d function as first sacrificial layers that will be removed in a subsequent process to release the semiconductor layers 104 b-104 d. The semiconductor layers 104 b-104 d that are released may function as channel structures of one or more transistors. In some embodiments, the
semiconductor layer 102 a is used as a second sacrificial layer and will be replaced with a dielectric material in a subsequent process. - In some embodiments, the
semiconductor layer 104 a functions as a base layer. The base layer may be formed into base structures and be used to physically separate a subsequently formed metal gate and a subsequently formed backside conductive contact from each other by a greater distance. Therefore, short circuiting between the subsequently formed metal gate and the subsequently formed backside conductive contact is prevented. - In some embodiments, the semiconductor layers 104 a-104 d that will be used to form channel structures are made of a material that is different than that of the semiconductor layers 102 a-102 d. In some embodiments, the semiconductor layers 104 a-104 d are made of or include silicon. In some embodiments, the first sacrificial layers (102 b-102 c) and the second sacrificial layer (102 a) include silicon germanium with different atomic concentrations of germanium to achieve different etching selectivity and/or different oxidation rates during subsequent processing.
- In some embodiments, the
semiconductor layer 102 a has a different atomic concentration of germanium than that of thesemiconductor layer semiconductor layer 102 a has a greater atomic concentration of germanium than that of thesemiconductor layer semiconductor layer 102 a may be in a range from about 46% to about 65%. The atomic concentration of germanium of thesemiconductor layer - The present disclosure contemplates that the semiconductor layers 102 b-102 d, the semiconductor layers 104 a-104 d, and the
semiconductor layer 102 a include any combination of materials that can provide desired etching selectivity, desired oxidation rate differences, and/or desired performance characteristics (e.g., materials that maximize current flow). - In some embodiments, the semiconductor layers 102 a-102 d and 104 a-104 d are formed using multiple epitaxial growth operations. Each of the semiconductor layers 102 a-102 d and 104 a-104 d may be formed using a selective epitaxial growth (SEG) process, a CVD process (e.g., a vapor-phase epitaxy (VPE) process, a low-pressure chemical vapor deposition (LPCVD) process, and/or an ultra-high vacuum CVD (UHV-CVD) process), a molecular beam epitaxy process, one or more other applicable processes, or a combination thereof. In some embodiments, the semiconductor layers 102 a-102 d and 104 a-104 d are grown in-situ in the same process chamber. In some embodiments, the growth of the semiconductor layers 102 a-102 d and 104 a-104 d are alternately and sequentially performed in the same process chamber to complete the formation of the semiconductor stack. In some embodiments, the vacuum of the process chamber is not broken before the epitaxial growth of the semiconductor stack is accomplished.
- Afterwards, hard mask elements are formed over the semiconductor stack to assist in a subsequent patterning of the semiconductor stack. One or more photolithography processes and one or more etching processes are used to pattern the semiconductor stack into fin structures 106A1, 106A2, 106B1, and 106B2, as shown in
FIG. 2B in accordance with some embodiments. The fin structures 106A1 and 106A2 are formed over thefirst region 10, and the fin structures 106B1 and 106B2 are formed over thesecond region 20. - The fin structures 106A1, 106A2, 106B1, and 106B2 may be patterned by any suitable method. For example, the fin structures 106A1, 106A2, 106B1, and 106B2 may be patterned using one or more photolithography processes, including double-patterning or multi-patterning processes. Double-patterning or multi-patterning processes may combine photolithography and self-aligned processes, allowing patterns to be created that have, for example, pitches smaller than what is otherwise obtainable using a single, direct photolithography process.
- The semiconductor stack is partially removed to form
trenches 112, as shown inFIG. 2B . Each of the fin structures 106A1, 106A2, 106B1, and 106B2 may include portions of the semiconductor layers 102 a-102 d and 104 a-104 d andsemiconductor fin semiconductor substrate 100 may also be partially removed during the etching process that forms the fin structures 106A1, 106A2, 106B1, and 106B2. Protruding portions of thesemiconductor substrate 100 that remain form thesemiconductor fins FIG. 2B . - Each of the hard mask elements may include a
first mask layer 108 and asecond mask layer 110. Thefirst mask layer 108 and thesecond mask layer 110 may be made of different materials. In some embodiments, thefirst mask layer 108 is made of a material that has good adhesion to thesemiconductor layer 104 d. Thefirst mask layer 108 may be made of silicon oxide, germanium oxide, silicon germanium oxide, one or more other suitable materials, or a combination thereof. In some embodiments, thesecond mask layer 110 is made of a material that has good etching selectivity to the semiconductor layers 102 a-102 d and 104 a-104 d. Thesecond layer 110 may be made of silicon nitride, silicon oxynitride, silicon carbide, one or more other suitable materials, or a combination thereof. -
FIGS. 1A-1B are top views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments. In some embodiments, the fin structures 106A1, 106A2, 106B1 and 106B2 are oriented lengthwise. In some embodiments, the extending directions of the fin structures 106A1, 106A2, 106B1 and 106B2 are substantially parallel to each other, as shown inFIG. 1A . In some embodiments,FIG. 2B is a cross-sectional view of the structure taken along thelines 2B-2B and 2B′-2B′inFIG. 1A . - As shown in
FIG. 2C , anisolation structure 114 is formed to surround lower portions of the fin structures 106A1, 106A2, 106B1 and 106B2, in accordance with some embodiments. In some embodiments, one or more dielectric layers are deposited over the fin structures 106A1, 106A2, 106B1 and 106B2 and thesemiconductor substrate 100 to overfill thetrenches 112. The dielectric layers may be made of silicon oxide, silicon oxynitride, borosilicate glass (BSG), phosphoric silicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), low-k material, porous dielectric material, one or more other suitable materials, or a combination thereof. The dielectric layers may be deposited using a flowable chemical vapor deposition (FCVD) process, an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, one or more other applicable processes, or a combination thereof. - Afterwards, a planarization process is used to partially remove the dielectric layers. The hard mask elements (including the
first mask layer 108 and the second mask layer 110) may also function as a stop layer of the planarization process. The planarization process may include a chemical mechanical polishing (CMP) process, a grinding process, a dry polishing process, an etching process, one or more other applicable processes, or a combination thereof. Afterwards, one or more etching back processes are used to partially remove the dielectric layers. As a result, the remaining portion of the dielectric layers forms theisolation structure 114. Upper portions of the fin structures 106A1, 106A2, 106B1 and 106B2 protrude from the top surface of theisolation structure 114, as shown inFIG. 2C . - In some embodiments, the etching back process for forming the
isolation structure 114 is carefully controlled to ensure that the topmost surface of theisolation structure 114 is positioned at a suitable height level, as shown inFIG. 2C . In some embodiments, the topmost surface of theisolation structure 114 is below the topmost surface of thesemiconductor layer 104 a (that functions as a base layer) and above the bottommost surface of thesemiconductor layer 104 a. - Afterwards, the hard mask elements (including the
first mask layer 108 and the second mask layer 110) are removed. Alternatively, in some other embodiments, the hard mask elements are removed or consumed during the planarization process and/or the etching back process that forms theisolation structure 114. - Afterwards, dummy gate stacks 120A1, 120A2, 120B1, and 120B2 are formed to extend across the fin structures fin structures 106A1, 106A2, 106B1 and 106B2, as shown in
FIG. 1B in accordance with some embodiments. In some embodiments,FIG. 2D is a cross-sectional view of the structure taken along thelines 2D-2D and 2D′-2D′ inFIG. 1B .FIGS. 3A-3K are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments. In some embodiments,FIG. 3A is a cross-sectional view of the structure taken along thelines 3A-3A and 3A′-3A′ inFIG. 1B . - As shown in
FIGS. 1B, 2D, and 3A , the dummy gate stacks 120A1, 120A2, 120B1, and 120B2 are formed to partially cover and to extend across the fin structures 106A1, 106A2, 106B1 and 106B2, in accordance with some embodiments. In some embodiments, the dummy gate stacks 120A1 and 120A2 wraps around the fin structures 106A1 and 106A2. The dummy gate stacks 120B1 and 120B2 wraps around the fin structures 106B1 and 106B2. As shown inFIG. 2D , the dummy gate stack 120A2 extends across and wraps around the fin structures 106A1 and 106A2, and the dummy gate stack 120B2 extends across and wraps around the fin structures 106B1 and 106B2. - In some embodiments, the device formed over the
second region 20 has a longer channel width than the device formed over thefirst region 10. As shown inFIG. 1B , the device formed over thefirst region 10 has a channel width LSC, and the device formed over thesecond region 20 has a channel width LLC. The channel width LLC is longer than the channel width LSC. The channel width Lsc may be in a range from about 10 nm to about 30 nm. The channel width LLC may be in a range from about 35 nm to about 300 nm. As shown inFIG. 1B , the pitch PLC between the dummy gate stacks 120B1 and 120B2 is longer than the pitch PSC between the dummy gate stacks 120A1 and 120A2. - As shown in
FIGS. 2D and 3A , each of the dummy gate stacks 120A1, 120A2, 120B1, and 120B2 includes a dummygate dielectric layer 116 and adummy gate electrode 118. The dummy gatedielectric layers 116 may be made of or include silicon oxide. Thedummy gate electrodes 118 may be made of or include polysilicon. In some embodiments, a dummy gate dielectric material layer and a dummy gate electrode layer are sequentially deposited over theisolation feature 114 and the fin structures 106A1, 106A2, 106B1 and 106B2. - The dummy gate dielectric material layer may be deposited using an ALD process, a CVD process, one or more other applicable processes, or a combination thereof. The dummy gate electrode layer may be deposited using a CVD process. Afterwards, the dummy gate dielectric material layer and the dummy gate electrode layer are patterned to form the dummy gate stacks 120A1, 120A2, 120B1, and 120B2.
- In some embodiments, hard mask elements including mask layers 122 and 124 are used to assist in the patterning process for forming the dummy gate stacks 120A1, 120A2, 120B1, and 120B2. With the hard mask elements as an etching mask, one or more etching processes are used to partially remove the dummy gate dielectric material layer and the dummy gate electrode layer. As a result, remaining portions of the dummy gate dielectric material layer and the dummy gate electrode layer form the dummy gate stacks 120A1, 120A2, 120B1, and 120B2 that include the dummy
gate dielectric layer 116 and thedummy gate electrodes 118. - As shown in
FIG. 3B , spacer layers 126 and 128 are afterwards deposited over the structure shown inFIG. 3A , in accordance with some embodiments. The spacer layers 126 and 128 extend along the sidewalls of the dummy gate stacks 120A1, 120A2, 120B1, and 120B2. The spacer layers 126 and 128 are made of different materials. Thespacer layer 126 may be made of a dielectric material that has a low dielectric constant. Thespacer layer 126 may be made of or include silicon carbide, silicon oxycarbide, silicon oxide, one or more other suitable materials, or a combination thereof. Thespacer layer 128 may be made of a dielectric material that can provide more protection to the gate stacks during subsequent processes. Thespacer layer 128 may have a greater dielectric constant than that of thespacer layer 126. Thespacer layer 128 may be made of silicon nitride, silicon oxynitride, carbon-containing silicon nitride, carbon-containing silicon oxynitride, one or more other suitable materials, or a combination thereof. The spacer layers 126 and 128 may be sequentially deposited using a CVD process, an ALD process, a physical vapor deposition (PVD) process, one or more other applicable processes, or a combination thereof. - As shown in
FIG. 3C , the spacer layers 126 and 128 are partially removed, in accordance with some embodiments. One or more anisotropic etching processes may be used to partially remove the spacer layers 126 and 128. As a result, remaining portions of the spacer layers 126 and 128form gate spacers 126′ and 128′, respectively. The gate spacers 126′ and 128′ extend along the sidewalls of the dummy gate stacks 120A1, 120A2, 120B1, and 120B2, as shown inFIG. 3C . - In some embodiments, the fin structures 106A1, 106A2, 106B1 and 106B2 are partially removed to form
recesses 130 that are used to contain epitaxial structures (such as source/drain structures) that will be formed later. Therecesses 130 expose the side surfaces of the semiconductor layers 102 a-102 d and 104 a-104 d. As shown inFIG. 3C , the fin structures 106A1 and 106B1 are partially removed to form some of therecesses 130, in accordance with some embodiments. One or more etching processes may be used to form therecesses 130. In some embodiments, a dry etching process is used to form therecesses 130. Alternatively, a wet etching process may be used to form therecesses 130. In some embodiments, each of therecesses 130 penetrates into the fin structure 106A1 or 106B1. In some embodiments, therecesses 130 further extend into thesemiconductor fin 101A1 or 101B1, as shown inFIG. 3C . In some embodiments, thegate spacers 126′ and 128′ and therecesses 130 are simultaneously formed using the same etching process. - In some embodiments, each of the
recesses 130 has slanted sidewalls. Upper portions of therecesses 130 are larger (or wider) than lower portions of therecesses 130. In these cases, due to the profile of therecesses 130, an upper semiconductor layer (such as thesemiconductor layer 104 d) is shorter than a lower semiconductor layer (such as thesemiconductor layer 104 b). - However, embodiments of the disclosure have many variations. In some other embodiments, the
recesses 130 have substantially vertical sidewalls. In these cases, due to the profile of therecesses 130, an upper semiconductor layer (such as thesemiconductor layer 104 d) is substantially as wide as a lower semiconductor layer (such as thesemiconductor layer 104 b). - As shown in
FIG. 3D , the semiconductor layers 102 b-102 d are laterally etched, in accordance with some embodiments. As a result, edges of the semiconductor layers 102 b-102 d retreat from edges of the semiconductor layers 104 a-104 d. As shown inFIG. 3D , recesses 132 are formed due to the lateral etching of the semiconductor layers 102 b-102 d. Therecesses 132 may be used to contain inner spacers that will be formed later. The semiconductor layers 102 b-102 d may be laterally etched using a wet etching process, a dry etching process, or a combination thereof. In some other embodiments, the semiconductor layers 102 b-102 d are partially oxidized before being laterally etched. - In some embodiments, the
semiconductor layer 102 a is also etched during the formation of therecesses 132. As mentioned above, in some embodiments, thesemiconductor layer 102 a has a greater atomic concentration of germanium than that of thesemiconductor layer semiconductor layer 102 a is thicker than thesemiconductor layer semiconductor layer 102 a is etched or oxidized at a greater rate than the semiconductor layers 102 b-102 d. - In some embodiments, the semiconductor layers 102 a is completely removed during the formation the
recesses 132. As a result, throughholes 302 are formed between thesemiconductor fin 101A1 and thesemiconductor layer 104 a and between the semiconductor fin 101B1 and thesemiconductor layer 104 a, as shown inFIG. 3D in accordance with some embodiments. Due to the support of the dummy gate stacks 120A1, 120A2, 120B1, and 120B2 (as shown inFIG. 2E ), the fin structure 106A1, 106A2, 106B1 and 106B2 are prevented from falling down even if thesemiconductor layer 102 a is removed. The throughholes 302 may be used to contain insulating structures that will be formed later. - During the lateral etching of the semiconductor layers 102 b-102 d, the semiconductor layers 104 a-104 d may also be slightly etched. As a result, edge portions of the semiconductor layers 104 a-104 d are partially etched and thus shrink to become edge elements 105 a-105 d, as shown in
FIG. 3D . As shown inFIG. 3D , each of the edge elements 105 a-105 d of the semiconductor layers 104 a-104 d is thinner than the respective inner portion of the semiconductor layers 104 a-104 d. - As shown in
FIG. 3E , an insulatinglayer 134 is deposited over the structure shown inFIG. 3D , in accordance with some embodiments. The insulatinglayer 134 covers the dummy gate stacks 120A1, 120A2, 120B1, and 120B2 and fills therecesses 132 and the throughholes 302. The insulatinglayer 134 may be made of or include carbon-containing silicon nitride (SiCN), carbon-containing silicon oxynitride (SiOCN), carbon-containing silicon oxide (SiOC), silicon oxide, silicon nitride, one or more other suitable materials, or a combination thereof. In some embodiments, the insulatinglayer 134 is a single layer. In some other embodiments, the insulatinglayer 134 includes multiple sub-layers. Some of the sub-layers may be made of different materials and/or contain different compositions. The insulatinglayer 134 may be deposited using a CVD process, an ALD process, one or more other applicable processes, or a combination thereof. - As shown in
FIG. 3F , an etching process is used to partially remove the insulatinglayer 134, in accordance with some embodiments. The remaining portions of the insulatinglayer 134 forminner spacers 136 and insulatingstructures 304, as shown inFIG. 3F . The etching process may include a dry etching process, a wet etching process, or a combination thereof. - Since the
inner spacers 136 and the insulatingstructures 304 are portions of the insulatinglayer 134, theinner spacers 136 and the insulatingstructures 304 are made of the same material, in accordance with some embodiments. However, embodiments of the disclosure are not limited thereto. In some other embodiments, theinner spacers 136 and the insulatingstructures 304 are formed separately from different insulating layers. In these cases, theinner spacers 136 and the insulatingstructures 304 may be made of different materials. - The insulating
structures 304 may be made of or include a low-k material (such as silicon oxide, SiN, SiCN, SiOC, and/or SiOCN), a high-k material (such as hafnium oxide, zirconium oxide, zirconium aluminum oxide, hafnium aluminum oxide, hafnium silicon oxide, and/or aluminum oxide), one or more other suitable materials (such as TiO, TaO, LaO, YO, TaCN, and/or ZrN), or a combination thereof. - The
inner spacers 136 cover the edges of the semiconductor layers 102 b-102 d that are originally exposed by therecesses 132. Theinner spacers 136 may be used to prevent subsequently formed epitaxial structures (that function as, for example, source/drain structures) from being damaged during a subsequent process for removing thesacrificial layers 102 b-102 d. In some embodiments, theinner spacers 136 are made of a low-k material that has a lower dielectric constant than that of silicon oxide. In these cases, theinner spacers 136 may also be used to reduce parasitic capacitance between the subsequently formed source/drain structures and the gate stacks. As a result, the operation speed of the semiconductor device structure may be improved. - In some embodiments, after the etching process for forming the
inner spacers 136, portions of thesemiconductor fins 101A1 and 101B1 originally covered by the insulatinglayer 134 are exposed by therecesses 130, as shown inFIG. 3F . The edges of the semiconductor layers 104 a-104 d are also exposed by therecesses 130, as shown inFIG. 3F . - As shown in
FIG. 3G ,epitaxial structures 138 are formed beside the dummy gate stacks 120A1, 120A2, 120B1, and 120B2, in accordance with some embodiments. In some embodiments, theepitaxial structures 138 fill therecesses 130, as shown inFIG. 3G . In some embodiments, theepitaxial structures 138 overfill therecesses 130. In these cases, the top surfaces of theepitaxial structures 138 are higher than the top surface of the dummygate dielectric layer 116. In some other embodiments, theepitaxial structures 138 partially fill therecesses 130. - In some embodiments, the
epitaxial structures 138 connect to the semiconductor layers 104 b-104 d. Each of the semiconductor layers 104 b-104 d is sandwiched between theepitaxial structures 138. In some embodiments, theepitaxial structures 138 function as source/drain structures. In some embodiments, theepitaxial structures 138 are p-type doped regions. Theepitaxial structures 138 may include epitaxially grown silicon germanium (SiGe), epitaxially grown silicon, or another suitable epitaxially grown semiconductor material. - However, embodiments of the disclosure are not limited thereto. In some other embodiments, the
epitaxial structures 138 are n-type doped regions. Theepitaxial structures 138 may include epitaxially grown silicon, epitaxially grown silicon carbide (SiC), epitaxially grown germanium, or another suitable epitaxially grown semiconductor material. - In some embodiments, the
epitaxial structures 138 are formed using a selective epitaxial growth (SEG) process, a CVD process (e.g., a vapor-phase epitaxy (VPE) process, a low-pressure chemical vapor deposition (LPCVD) process, and/or an ultra-high vacuum CVD (UHV-CVD) process), a molecular beam epitaxy process, one or more other applicable processes, or a combination thereof. - In some embodiments, the
epitaxial structures 138 are doped with one or more suitable p-type dopants. For example, theepitaxial structures 138 are SiGe source/drain features or Si source/drain features that are doped with boron (B), gallium (Ga), indium (In), or another suitable dopant. In some other embodiments, theepitaxial structures 138 are doped with one or more suitable n-type dopants. For example, theepitaxial structures 138 are Si source/drain features doped with phosphor (P), antimony (Sb), or another suitable dopant. - In some embodiments, the
epitaxial structures 138 are doped in-situ during their epitaxial growth. The initial reaction gas mixture for forming theepitaxial structures 138 contains dopants. In some other embodiments, theepitaxial structures 138 are not doped during the growth of theepitaxial structures 138. Instead, after the formation of theepitaxial structures 138, theepitaxial structures 138 are doped in a subsequent process. In some embodiments, the doping is achieved by using an ion implantation process, a plasma immersion ion implantation process, a gas and/or solid source diffusion process, one or more other applicable processes, or a combination thereof. In some embodiments, theepitaxial structures 138 are further exposed to one or more annealing processes to activate the dopants. For example, a rapid thermal annealing process is used. - As shown in
FIG. 3H , a contactetch stop layer 139 and adielectric layer 140 are formed to cover theepitaxial structures 138 and to surround the dummy gate stacks 120A1, 120A2, 120B1, and 120B2, in accordance with some embodiments. The contactetch stop layer 139 may be made of or include silicon nitride, silicon oxynitride, silicon carbide, aluminum oxide, one or more other suitable materials, or a combination thereof. Thedielectric layer 140 may be made of or include silicon oxide, silicon oxynitride, borosilicate glass (BSG), phosphoric silicate glass (PSG), borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG), low-k material, porous dielectric material, one or more other suitable materials, or a combination thereof. - In some embodiments, an etch stop material layer and a dielectric material layer are sequentially deposited over the structure shown in
FIG. 3G . The etch stop material layer may be deposited using a CVD process, an ALD process, a PVD process, one or more other applicable processes, or a combination thereof. The dielectric material layer may be deposited using an FCVD process, a CVD process, an ALD process, one or more other applicable processes, or a combination thereof. - Afterwards, a planarization process is used to partially remove the etch stop material layer and the dielectric material layer. As a result, the remaining portions of the etch stop material layer and the dielectric material layer respectively form the contact
etch stop layer 139 and thedielectric layer 140, as shown inFIG. 3H . The planarization process may include a CMP process, a grinding process, an etching process, a dry polishing process, one or more other applicable processes, or a combination thereof. In some embodiments, the mask layers 122 and 124 used for defining the dummy gate stacks 120A1, 120A2, 120B1, and 120B2 are also removed during the planarization process. In some embodiments, after the planarization process, the top surfaces of the contactetch stop layer 139, thedielectric layer 140, and thedummy gate electrodes 118 are substantially level with each other. - As shown in
FIG. 31 ,protective caps 141 are formed over thedielectric layer 140, in accordance with some embodiments. Theprotective caps 141 may be used to protect thedielectric layer 140 thereunder. Thedielectric layer 140 may be protected during the subsequent processes such as a subsequent metal gate etching back process. Thedielectric layer 140 may thus be kept with a suitable thickness. Theprotective caps 141 may be made of or include SiN, SiCN, SiOC, SiOCN, SiC, SiON, AlO, AlN, AlON, ZrO, ZrN, ZrAlO, HfO, one or more other suitable materials, or a combination thereof. - In some embodiments, the
dielectric layer 140 is partially removed using one or more etching processes. As a result, recesses are formed over the remainingdielectric layer 140. Afterwards, a protective layer is formed to overfill the recesses. The protective layer may be formed using a CVD process, an ALD process, one or more other applicable processes, or a combination thereof. A planarization process is then used to remove the portion of the protective layer outside of the recesses. As a result, the remaining portions of the protective layer within the recesses form theprotective caps 141. The planarization process may include a CMP process, an etching process, a grinding process, a dry polishing process, one or more other applicable processes, or a combination thereof. - As shown in
FIG. 3J , one or more etching processes are used to remove thedummy gate electrodes 118 to formtrenches 142, in accordance with some embodiments. Thetrenches 142 are surrounded by thedielectric layer 140. Thetrenches 142 expose the dummygate dielectric layer 116. Each of thetrenches 142 formed over thesecond region 20 is wider than each of thetrenches 142 formed over thefirst region 10. During the formation of thetrenches 142, thedielectric layer 140 is protected by theprotective caps 141. - As shown in
FIG. 3K , the dummygate dielectric layer 116 and the semiconductor layers 102 b-102 d (that function as sacrificial layers) are removed, in accordance with some embodiments. In some embodiments, an etching process is used to remove the semiconductor layers 102 b-102 d. As a result, recesses 144 are formed, as shown inFIG. 3K . - Due to high etching selectivity, the semiconductor layers 104 a-104 d are slightly (or substantially not) etched. The remaining portions of the semiconductor layers 104 b-104 d form
multiple semiconductor nanostructures 104 b′-104 d′ of the fin structures 106A1 and 106B1, as shown inFIG. 3K . Thesemiconductor nanostructures 104 b′-104 d′ are constructed by or made up of the remaining portions of the semiconductor layers 104 b-104 d. Thesemiconductor nanostructures 104 b′-104 d′ suspended over thesemiconductor fin 101A1 or 101B1 may function as channel structures of transistors. In some embodiments, each of thesemiconductor nanostructures 104 b′-104 d′ formed over thesecond region 20 is longer than each of thesemiconductor nanostructures 104 b′-104 d′ formed over thefirst region 10. - In some embodiments, the etchant used for removing the semiconductor layers 102 b-102 d also slightly removes the semiconductor layers 104 a-104 d that form the
semiconductor nanostructures 104 a′-104 d′. As a result, the obtainedsemiconductor nanostructures 104 a′-104 d′ become thinner after the removal of the semiconductor layers 102 b-102 d. As shown inFIG. 3K , each of thesemiconductor nanostructures 104 b′-104 d′ is thinner than theedge portions 105 b-105 d since theedge portions 105 b-105 d are surrounded by other elements and thus are prevented from being reached and etched by the etchant, in accordance with some embodiments. - In some embodiments, due to the protection of the
semiconductor layer 102 b, the etchant used for removing the semiconductor layers 102 b-102 d slightly (or substantially not) etches thesemiconductor layer 104 a. As a result, thesemiconductor layer 104 a that remainsform base structures 104 a′. In some embodiments, thebase structures 104 a′ also function as channel structures. In some other embodiments, thebase structures 104 a′ do not function as channel structures. Thebase structures 104 a′ and the insulatingstructures 304 may also be used to increase physical distance between subsequently formed metal gate stacks and backside conductive contacts (if formed). Short circuiting between the metal gate stacks and the backside conductive contacts may be prevented. - After the removal of the semiconductor layers 102 b-102 d (that function as sacrificial layers), the
recesses 144 are formed. Therecesses 144 connect to thetrench 142 and surround each of thesemiconductor nanostructures 104 b′-104 d′. As shown inFIG. 3K , even if therecesses 144 between thesemiconductor nanostructures 104 b′-104 d′ are formed, thesemiconductor nanostructures 104 b′-104 d′ remain being held by theepitaxial structures 138. Therefore, after the removal of the semiconductor layers 102 b-102 d (that function as sacrificial layers), the releasedsemiconductor nanostructures 104 b′-104 d′ are prevented from falling down. - During the removal of the semiconductor layers 102 b-102 d (that function as sacrificial layers), the
inner spacers 136 protect theepitaxial structures 138 from being etched or damaged. The quality and reliability of the semiconductor device structure are improved. During the removal of the semiconductor layers 102 b-102 d, thedielectric layer 140 is protected by theprotective caps 141, which maintains thedielectric layer 140 with a suitable thickness. - As shown in
FIG. 3L , thegate spacers 126′ and 128′ are partially removed, in accordance with some embodiments. Upper portions of thegate spacers 126′ and 128′ may be removed. As a result, upper portions of thetrenches 142 become wider or larger, which facilitates subsequent processes such as a subsequent filling process for forming metal gate stacks and a subsequent etching back process of the metal gate stacks. One or more etching processes may be used to partially remove thegate spacers 126′ and 128′. - As shown in
FIG. 3M , multiple metal gate stack layers are deposited over the structure shown inFIG. 3L , in accordance with some embodiments. In some embodiments, the metal gate stack layers in thetrenches 142 formed over thefirst region 10 merge together and completely fill therespective trenches 142. In some embodiments, the metal gate stack layers partially fill thetrenches 142 formed over thesecond region 20 since thetrenches 142 over thesecond region 20 are wider. In some embodiments, the metal gate stack layers extend into therecesses 144 to wrap around each of thesemiconductor nanostructures 104 b′-104 d′, as shown inFIG. 3M . In some embodiments, the metal gate stack layers over thefirst region 10 and thesecond region 20 are simultaneously formed using the same deposition processes. First portions of the metal gate stack layers are formed in thetrenches 142 over thefirst region 10, and second portions of the metal gate stack layers are formed in thetrenches 142 over thesecond region 20. - The metal gate stack layers may include a
gate dielectric layer 150, awork function layer 152, and aconductive layer 154. Theconductive layer 154 may function as a conductive filling layer that completely fills the remaining space of thetrenches 142 over thefirst region 10. In some embodiments, since thetrenches 142 over the second region 20 (i.e., a long channel region) are wider, theconductive layer 154 cannot completely fills thetrenches 142 over thesecond region 20. - In some embodiments, the
gate dielectric layer 150 is made of or includes a dielectric material with high dielectric constant (high-K). Thegate dielectric layer 150 may be made of or include hafnium oxide, zirconium oxide, aluminum oxide, hafnium dioxide-alumina alloy, hafnium silicon oxide, hafnium silicon oxynitride, hafnium tantalum oxide, hafnium titanium oxide, hafnium zirconium oxide, one or more other suitable high-K materials, or a combination thereof. Thegate dielectric layer 150 may be deposited using an ALD process, a CVD process, one or more other applicable processes, or a combination thereof. - In some embodiments, before the formation of the
gate dielectric layer 150, an interfacial layers are formed on the surfaces of thesemiconductor nanostructures 104 b′-104 d′ and thebase structures 104 a′. The interfacial layers are very thin and are made of, for example, silicon oxide or germanium oxide. In some embodiments, the interfacial layers are formed by applying an oxidizing agent on the surfaces of thesemiconductor nanostructures 104 b′-104 d′ and thebase structures 104 a′. For example, a hydrogen peroxide-containing liquid may be applied or provided on the surfaces of thesemiconductor nanostructures 104 b′-104 d′ and thebase structures 104 a′, so as to form the interfacial layers. - The
work function layer 152 may be used to provide the desired work function for transistors to enhance device performance including improved threshold voltage. In some embodiments, thework function layer 152 is used for forming a PMOS device. Thework function layer 152 is a p-type work function layer. The p-type work function layer is capable of providing a work function value suitable for the device, such as equal to or greater than about 4.8 eV. - The p-type work function layer may include metal, metal carbide, metal nitride, other suitable materials, or a combination thereof. For example, the p-type metal includes tantalum nitride, tungsten nitride, titanium, titanium nitride, one or more other suitable materials, or a combination thereof.
- In some other embodiments, the
work function layer 152 is used for forming an NMOS device. Thework function layer 152 is an n-type work function layer. The n-type work function layer is capable of providing a work function value suitable for the device, such as equal to or less than about 4.5 eV. - The n-type work function layer may include metal, metal carbide, metal nitride, or a combination thereof. For example, the n-type work function layer includes titanium nitride, tantalum, tantalum nitride, one or more other suitable materials, or a combination thereof. In some embodiments, the n-type work function layer is an aluminum-containing layer. The aluminum-containing layer may be made of or include TiAlC, TiAlO, TiAlN, one or more other suitable materials, or a combination thereof.
- The
work function layer 152 may also be made of or include hafnium, zirconium, titanium, tantalum, aluminum, metal carbides (e.g., hafnium carbide, zirconium carbide, titanium carbide, aluminum carbide), aluminides, ruthenium, palladium, platinum, cobalt, nickel, conductive metal oxides, or a combinations thereof. The thickness and/or the compositions of thework function layer 152 may be fine-tuned to adjust the work function level. - The
work function layer 152 may be deposited over thegate dielectric layer 150 using an ALD process, a CVD process, a PVD process, an electroplating process, an electroless plating process, one or more other applicable processes, or a combination thereof. - In some embodiments, a barrier layer is formed before the
work function layer 152 to interface thegate dielectric layer 150 with the subsequently formedwork function layer 152. The barrier layer may also be used to prevent diffusion between thegate dielectric layer 150 and the subsequently formedwork function layer 152. The barrier layer may be made of or include a metal-containing material. The metal-containing material may include titanium nitride, tantalum nitride, one or more other suitable materials, or a combination thereof. The barrier layer may be deposited using an ALD process, a CVD process, a PVD process, an electroplating process, an electroless plating process, one or more other applicable processes, or a combination thereof. - In some embodiments, the
conductive layer 154 is made of or includes a metal material. The metal material may include tungsten, ruthenium, aluminum, copper, cobalt, titanium, one or more other suitable materials, or a combination thereof. Theconductive layer 154 may be deposited over thework function layer 152 using a CVD process, an ALD process, a PVD process, an electroplating process, an electroless plating process, a spin coating process, one or more other applicable processes, or a combination thereof. - In some embodiments, a blocking layer is formed over the
work function layer 152 before the formation of theconductive layer 154. The blocking layer may be used to prevent the subsequently formedconductive layer 154 from diffusing or penetrating into thework function layer 152. The blocking layer may be made of or include tantalum nitride, titanium nitride, one or more other suitable materials, or a combination thereof. The blocking layer may be deposited using an ALD process, a PVD process, an electroplating process, an electroless plating process, one or more other applicable processes, or a combination thereof. - In some embodiments, the
conductive layer 154 does not extend into therecesses 144 since therecesses 144 are small and have been filled with other elements such as thegate dielectric layer 150 and thework function layer 152. However, embodiments of the disclosure are not limited thereto. In some other embodiments, a portion of the conductive filling extends into therecesses 144 with larger space, such as thelower recesses 144 over thesecond region 20. - As shown in
FIG. 3N , one or more etching processes are used to partially remove the metal gate stack layers, in accordance with some embodiments. In some embodiments, the metal gate stack layers outside of thetrenches 142 are thus removed. In some embodiments, the portions of the metal gate stack layers in thetrenches 142 over thesecond region 20 are trimmed. As a result, the remaining portions of the metal gate stack layers form metal gate stacks 156A1, 156A2, 156B1, and 156B2, as shown inFIG. 3N . - In some embodiments, the
conductive layer 154 in thetrenches 142 over thesecond region 20 is partially removed from the surface of theconductive layer 154 exposed by thetrenches 142 and thus becomes thinner, as shown inFIG. 3N . Due to the partial removal of the metal gate stack layers, larger space is created in thetrenches 142 over thesecond region 20, which facilitates a subsequent formation of protective structures in therespective trenches 142. - As shown in
FIG. 3N , a top portion of the metal gate stack layers in thetrench 142 over thefirst region 10 has a first width WA. A top portion of the metal gate stack layers in thetrench 142 over thesecond region 20 has a second width WB. In some embodiments, half (i.e., the width WC) of the first width WA is greater than the second width WB. Half of the first width WA (i.e., the width WC) may be in a range from about 5 nm to about 15 nm. The second width WB may be in a range from about 3 nm to about 12 nm. - Afterwards, a protective layer is deposited over the
dielectric layer 140 and the metal gate stacks 156A1, 156A2, 156B1, and 156B2, in accordance with some embodiments. The protective layer overfills thetrenches 142 over thesecond region 20. The protective layer may be made of or include SiN, SiCN, SiOC, SiOCN, SiC, SiON, SiO, AlO, AlN, AlON, ZrO, ZrN, ZrAlO, HfO, one or more other suitable materials, or a combination thereof. The protective layer may be deposited using a CVD process, an ALD process, an FCVD process, one or more other applicable processes, or a combination thereof. - Afterwards, a planarization process is performed to remove the portions of the protective layer outside of the
trenches 142. As a result, the remaining portions of the protective layer formprotective structures 158 over the metal gate stacks 156B1 and 156B2, as shown inFIG. 3O in accordance with some embodiments. The planarization process may include a CMP process, an etching process, a grinding process, a dry polishing process, one or more other applicable processes, or a combination thereof. Because theconductive layer 154 of the metal gate stacks 156B1 and 156B2 is partially removed to become thinner, more available space is provided for the formation of theprotective structures 158. Each of theprotective structures 158 may thus have a sufficient size and strength to sustain the subsequent processes including a subsequent metal gate etching back process. - As shown in
FIG. 3P , the metal gate stacks 156A1, 156A2, 156B1, and 156B2 are partially removed to formrecesses gate spacers 126′ and 128′, as shown inFIG. 3P . The tops of thegate spacers 126′ and 128′ are higher than the tops of the metal gate stacks 156A1, 156A2, 156B1, and 156B2. As mentioned above, each of theprotective structures 158 may have a sufficient size. The adhesion between theprotective structures 158 and the neighboring elements is enhanced. Theprotective structures 158 are prevented from the peeling issue and/or the collapse issue even if the metal gate stacks 156B1 and 156B2 are etched back. - As shown in
FIG. 3Q , protective structures 160A are formed over the metal gate stacks 156A1 and 156A2, and protective structures 160B are formed over the metal gate stacks 156B1 and 156B2, in accordance with some embodiments. Theprotective structures 158, 160A, and 160B may be used to protect the metal gate stacks thereunder. The protected metal gate stacks may thus be prevented from being damaged during the subsequent processes such as a subsequent contact formation process. - Each of the protective structures 160B extends along the sidewall of the nearby
protective structure 158. In some embodiments, each of the protective structures 160B is in direct contact with the nearbyprotective structure 158. In some embodiments, each of the protective structures 160B is in direct contact with the nearbyprotective structure 158, thenearby gate spacers 126′ and 128′, and the nearby metal gate stack 156B1 or 156B2. In some embodiments, the bottommost surface of theprotective structure 158 is lower than the bottommost surface of the protective structure 160B or the topmost surface of the metal gate stack 156B1 or 156B2. - In some embodiments, the protective structures 160A and the protective structures 160B are made of the same material. In some embodiments, the protective structures 160A and the protective structures 160B are formed simultaneously. In some other embodiments, the protective structures 160A and the protective structures 160B are formed separately. In these cases, the protective structures 160A and the protective structures 160B may be made of different materials. For example, the protective structures 160B may be made of a dielectric material that has a better filling ability than that of the material used for forming the protective structures 160A. In some embodiments, the protective structures 160B (or 160A) and the
protective structures 158 are made of the same material. In some other embodiments, the protective structures 160B (or 160A) and theprotective structures 158 are made of different materials. - In some embodiments, a protective layer is deposited over the structure shown in
FIG. 30 to overfill therecesses - Afterwards, a planarization process is performed to remove the portions of the protective layer outside of the
recesses FIG. 3Q in accordance with some embodiments. The planarization process may include a CMP process, an etching process, a grinding process, a dry polishing process, one or more other applicable processes, or a combination thereof. - As shown in
FIG. 3Q , the metal gate stack 156A1 has a width W1. As shown inFIG. 3Q , the metal gate stack 156B1 has a protruding portion that extends away from thesemiconductor nanostructures 104 b′-104 d′ along thenearby gate spacer 126′, and the portion of the metal gate stack 156B1 has a width W2. In some embodiments, half (i.e., the width W3) of the width W1 is greater than the width W2. - As shown in
FIG. 3Q , theconductive layer 154 of the metal gate stack 156A1 or 156A2 is thicker than theconductive layer 154 of the metal gate stack 156B1 or 156B2. However, embodiments of the disclosure are not limited thereto. Many variations and/or modifications can be made to embodiments of the disclosure. For example, in some embodiments, the metal gate stacks over thefirst region 10 include theconductive layer 154, and the metal gate stacks over thesecond region 10 do not include theconductive layer 154. -
FIGS. 4A-4C are cross-sectional views of various stages of a process for forming a semiconductor device structure, in accordance with some embodiments. As shown inFIG. 4A , a structure the same as or similar to the structure shown inFIG. 3M is formed. Afterwards, similar to the embodiments illustrated inFIG. 3N , the metal gate stack layers are partially removed. In some embodiments, theconductive layer 154 originally formed over thesecond region 20 is completely removed, as shown inFIG. 4B . As a result, the work function layer 152 (that is originally covered by the conductive layer 154) is exposed. - Afterwards, the processes similar to those illustrated in
FIGS. 30-3Q are performed, in accordance with some embodiments. As a result, the structure shown inFIG. 4C is formed. In some embodiments, theprotective structures 158 are in direct contact with the nearbywork function layer 152. - In some embodiments, there are four channel structures (such as the
semiconductor nanostructures 104 a′-104 d′) formed. However, embodiments of the disclosure are not limited thereto. Many variations and/or modifications can be made to embodiments of the disclosure. In some embodiments, the total number of the semiconductor nanostructures is greater than four. In some other embodiments, the total number of the semiconductor nanostructures is smaller than four. The total number of the semiconductor nanostructures (or channel structures) of each semiconductor device structure may be fine-tuned to meet requirements. For example, the total number of the semiconductor nanostructures may be 3 to 8. The semiconductor nanostructures may have many applicable profiles. The semiconductor nanostructures may include nanosheets, nanowires, or other suitable nanostructures. - Embodiments of the disclosure form a semiconductor device structure with a first metal gate stack and a second metal gate stack over a short channel device and a long channel device, respectively. The second metal gate stack is wider than the first metal gate stack. Before forming a protective structure over the second metal gate stack, the second metal gate stack is trimmed to be thinner to provide larger space for containing the protective structure. The protective structures may thus have a sufficient size to provide larger contact area with the neighboring elements. The adhesion between the protective structures and the neighboring elements is enhanced. The protective structures may be prevented from the peeling issue and/or the collapse issue even if the second metal gate stack is etched back during a subsequent process. The performance and reliability of the semiconductor device structure are thus greatly improved.
- In accordance with some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes a first channel structure and a second channel structure over a substrate. The second channel structure is longer than the first channel structure. The semiconductor device structure also includes a first gate stack over the first channel structure, and the first gate stack has a first width. The semiconductor device structure further includes a first gate spacer extending along a sidewall of the first gate stack. In addition, the semiconductor device structure includes a second gate stack over the second channel structure and a second gate spacer extending along a sidewall of the second gate stack. The second gate stack has a portion extending along the second gate spacer, and the portion of the second gate stack has a second width. Half of the first width is greater than the second width.
- In accordance with some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes a stack of first channel structures and a stack of second channel structures over a substrate. The semiconductor device structure also includes a first metal gate stack wrapped around the first channel structures, and the first metal gate stack has a first width. The semiconductor device structure further includes a second metal gate stack wrapped around the second channel structures. The second gate stack has a protruding portion extending away from the second channel structures. The protruding portion of the second metal gate stack has a second width, and half of the first width is greater than the second width.
- In accordance with some embodiments, a method for forming a semiconductor device structure is provided. The method includes respectively forming a first dummy gate stack and a second dummy gate stack over a first channel structure and a second channel structure. The second dummy gate stack is wider than the first dummy gate stack. The method also includes forming a dielectric layer to surround the first dummy gate stack and the second dummy gate stack. The method further includes removing the first dummy gate stack and the second dummy gate stack to form a first trench and a second trench. In addition, the method includes forming metal gate stack layers with a first portion in the first trench and a second portion in the second trench. The method includes trimming the second portion of the metal gate stack layers in the second trench. The method also includes forming a protective structure over the second portion after the second portion is thinned.
- The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (20)
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US18/434,028 US20240222458A1 (en) | 2020-07-30 | 2024-02-06 | Semiconductor device structure with metal gate stack |
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US9236267B2 (en) | 2012-02-09 | 2016-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cut-mask patterning process for fin-like field effect transistor (FinFET) device |
US9006829B2 (en) | 2012-08-24 | 2015-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Aligned gate-all-around structure |
US9209247B2 (en) | 2013-05-10 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned wrapped-around structure |
US9136332B2 (en) | 2013-12-10 | 2015-09-15 | Taiwan Semiconductor Manufacturing Company Limited | Method for forming a nanowire field effect transistor device having a replacement gate |
US9136106B2 (en) | 2013-12-19 | 2015-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
US9608116B2 (en) | 2014-06-27 | 2017-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | FINFETs with wrap-around silicide and method forming the same |
US9412817B2 (en) | 2014-12-19 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicide regions in vertical gate all around (VGAA) devices and methods of forming same |
US9536738B2 (en) | 2015-02-13 | 2017-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical gate all around (VGAA) devices and methods of manufacturing the same |
US9502265B1 (en) | 2015-11-04 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical gate all around (VGAA) transistors and methods of forming the same |
US9520482B1 (en) | 2015-11-13 | 2016-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of cutting metal gate |
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