US20210404061A1 - Atomic layer self aligned substrate processing and integrated toolset - Google Patents
Atomic layer self aligned substrate processing and integrated toolset Download PDFInfo
- Publication number
- US20210404061A1 US20210404061A1 US17/474,193 US202117474193A US2021404061A1 US 20210404061 A1 US20210404061 A1 US 20210404061A1 US 202117474193 A US202117474193 A US 202117474193A US 2021404061 A1 US2021404061 A1 US 2021404061A1
- Authority
- US
- United States
- Prior art keywords
- station
- wafer
- anneal
- processing
- etch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 81
- 238000012545 processing Methods 0.000 title claims description 103
- 238000000034 method Methods 0.000 claims abstract description 141
- 238000000151 deposition Methods 0.000 claims description 29
- 230000008021 deposition Effects 0.000 claims description 25
- 238000000231 atomic layer deposition Methods 0.000 claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 89
- 239000010408 film Substances 0.000 description 73
- 239000007789 gas Substances 0.000 description 42
- 239000000463 material Substances 0.000 description 20
- 238000007789 sealing Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000012546 transfer Methods 0.000 description 12
- 238000010926 purge Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 8
- 230000033001 locomotion Effects 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
Definitions
- the present disclosure relates generally to apparatus for depositing thin films.
- the disclosure relates to apparatus having a plurality of separate processing stations to deposit a self-aligned film on a substrate.
- ALD atomic layer deposition
- Many ALD chemistries e.g., precursors and reactants
- CVD chemical vapor deposition
- the CVD process generally has less thickness control than the ALD process and/or can result in the creation of gas phase particles which can cause defects in the resultant device.
- a spatial ALD chamber can move one or more wafer(s) from one environment to a second environment faster than a time-domain ALD chamber can pump/purge, resulting in higher throughput.
- One or more embodiments of the disclosure are directed to processing tools comprising a plurality of process stations. Each process station provides a processing region separated from processing regions of adjacent process stations.
- a substrate support has a support surface to support a wafer for processing. The substrate support is configured to move the wafer between at least two of the plurality of process stations.
- a controller is connected to the substrate support and the plurality of process stations. The controller is configured to activate the substrate support to move the wafer between stations, and to control a process occurring in each of the process stations.
- the plurality of process stations comprises a deposition station, an anneal station, and a treatment station.
- Additional embodiments of the disclosure are directed to methods for depositing a film.
- a substrate is moved to a deposition station to deposit a film on a surface of the substrate.
- the substrate is moved to an anneal station to anneal the film on the substrate.
- the substrate is moved to a treatment station to treat the annealed film with a plasma.
- Each of the deposition station, anneal station and treatment station are part of an integrated processing tool with a controller configured to move the substrate, deposit the film, anneal the film and treat the annealed film.
- a substrate having a first substrate surface and a second substrate surface is provided in a deposition station.
- the first substrate surface comprises a different material than the second substrate surface.
- a film is deposited on the first substrate surface and the second substrate surface in the deposition station.
- the film has a thickness less than or equal to about 20 ⁇ .
- the substrate is moved from the deposition station to an anneal station to anneal the film and form an annealed film.
- the substrate is moved to a treatment station to treat the annealed film with a plasma to form a treated annealed film.
- the plasma changes at least one property of the film on at least one of the first substrate surface or the second substrate surface.
- the substrate is moved to an etch station to selectively etch the film from the second substrate surface relative to the first substrate surface.
- Depositing the film, annealing the film, treating the film and selectively etching the film are repeated to selectively deposit a film having at thickness greater than or equal to about 1000 ⁇ on the first substrate surface.
- FIG. 1A shows a schematic representation of a processing tool in accordance with one or more embodiment of the disclosure
- FIGS. 1B through 1H illustrate a deposition process in accordance with one or more embodiment of the disclosure
- FIG. 1J illustrates a flowchart of the deposition process illustrated in FIGS. 1B through 1H in accordance with one or more embodiment of the disclosure
- FIG. 2 shows a bottom perspective view of a support assembly in accordance with one or more embodiment of the disclosure
- FIG. 3 shows a top perspective view of a support assembly in accordance with one or more embodiment of the disclosure
- FIG. 4 shows a top perspective view of a support assembly in accordance with one or more embodiment of the disclosure
- FIG. 5 shows a schematic cross-sectional view of the support assembly of FIG. 4 taken along line IV-IV;
- FIG. 6 shows a cross-sectional perspective view of a processing chamber in accordance with one or more embodiment of the disclosure
- FIG. 7 shows a cross-sectional view of a processing chamber in accordance with one or more embodiment of the disclosure
- FIG. 8 shows a schematic representation of a processing platform in accordance with one or more embodiment of the disclosure.
- FIGS. 9A through 9I shows a schematic views of process stations in a processing chamber in accordance with one or more embodiment of the disclosure.
- FIGS. 10A and 10B shows a schematic representation of process in accordance with one or more embodiment of the disclosure.
- a “substrate” as used herein, refers to any substrate or material surface formed on a substrate upon which film processing is performed during a fabrication process.
- a substrate surface on which processing can be performed include materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxides, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application.
- Substrates include, without limitation, semiconductor wafers. Substrates may be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal and/or bake the substrate surface.
- any of the film processing steps disclosed may also be performed on an under-layer formed on the substrate as disclosed in more detail below, and the term “substrate surface” is intended to include such under-layer as the context indicates.
- substrate surface is intended to include such under-layer as the context indicates.
- the terms “precursor”, “reactant”, “reactive gas” and the like are used interchangeably to refer to any gaseous species that can react with the substrate surface, or with a film formed on the substrate surface.
- Some embodiments of the disclosure provide integrated toolsets which allow for the fabrication of self-aligned features based on underlying substrate materials. Some embodiments allow for the growth of different films on different features or surfaces (e.g., metal silicide on metal and SiN on dielectric).
- the integrated tool comprises multiple stations with or without a rotating platform to deposit, anneal, treat the surface and optional removal processes. The sequence can be repeated to allow for very controlled growth in the feature without creating lateral growth (encroachment).
- Embodiments of the disclosure can be used with planar substrates, substrates with features (e.g., vias, trenches, fins) and with hardmask/patterning applications.
- a planar application might form a metal silicide film on a metal surface and a nitride film on an adjacent dielectric surface.
- An application using surface features include, but are not limited to, formation of vias over metal/oxide surfaces to that a metal silicide forms on the metal and a nitride forms on the oxide.
- a metal silicide can be formed on the bottom and top surfaces.
- FIG. 1A illustrates an integrated processing tool 10 for forming self-aligned features.
- the processing tool 10 has a plurality of process stations 11 , 12 , 13 , 14 with each station providing a processing region 11 a , 12 a , 13 a , 14 a separated from adjacent process stations.
- the exemplary embodiment illustrated has four stations; however, the skilled artisan will recognize that there can be more or less than four stations.
- the individual stations can be separated from adjacent stations by gas curtains or physical barriers.
- a substrate support 15 (shown as a dashed line) has a support surface to support a substrate or wafer for processing.
- the substrate support is configured to move a wafer between at least two of the plurality of processing stations.
- the substrate support is configured to move the wafer between all of the process stations.
- the term “between” includes the processing regions of the individual process stations.
- a controller 16 can be connected to the substrate support 15 and the plurality of process stations 11 , 12 , 13 , 14 .
- the controller can be configured to activate the substrate support 15 to move the wafer between stations, and to control a process occurring in each of the process stations.
- the plurality of process stations 11 , 12 , 13 , 14 include, respectively, a deposition station, an annealing station, a treatment station and an optional etch station.
- FIG. 1J illustrates a flowchart of the process 500 illustrated in FIGS. 1B through 1H .
- the substrate is provided, or positioned, in an environment for processing.
- the substrate can be positioned in the process station 11 and is therefore provided for processing.
- the substrate 21 has a first material 22 with a first surface 22 a and a second material 23 with a second surface 23 a that is different than the first material 22 and the first surface 22 a .
- the process station 11 can include any suitable deposition chamber that can form the film.
- the deposition station comprises one or more of an atomic layer deposition (ALD) chamber, plasma enhanced atomic layer deposition (PEALD), a chemical vapor deposition (CVD) chamber, or a plasma enhanced chemical vapor deposition (PECVD) chamber.
- ALD atomic layer deposition
- PEALD plasma enhanced atomic layer deposition
- CVD chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
- the first material 22 comprises a metal (e.g., cobalt, copper, titanium).
- the second material 23 comprises a dielectric (e.g., an oxide).
- the process stations may comprise exposure to a portion of a deposition process.
- process station 11 may expose a substrate to a first reactant and process station 12 may expose the substrate to a second reactant to react with the first reactant and deposit a film.
- two or more stations may be used for a single deposition process.
- a film 24 is formed on the substrate 21 , as shown in FIG. 1C .
- the film 24 can be formed conformally so that there is a substantially equal thickness on both the first material 22 and the second material 23 , or can be selective to the first material 22 relative to the second material 23 .
- the degree of selectivity can be in the range of about 1:1 to about 50:1 for the first material 22 : second material 23 .
- the film 24 can be formed to any suitable thickness.
- the film 24 has a thickness less than or equal to about one monolayer of the material being deposited.
- the thickness of the film 24 is greater than 0.1 ⁇ up to about 10 ⁇ , 15 ⁇ , 20 ⁇ , 25 ⁇ , 30 ⁇ , 35 ⁇ or 40 ⁇ .
- the film comprises one or more of silicon, titanium, copper, cobalt, tungsten or aluminum.
- the substrate 21 is moved from process station 11 to process station 12 .
- the film 24 can be exposed to an anneal process in process station 12 to form an annealed film 25 .
- the anneal station comprises one or more of a laser anneal, thermal anneal or flash anneal chamber.
- the substrate 21 is moved from process station 12 to process station 13 .
- the annealed film 25 is treated to form treated film 26 .
- the treatment can be any suitable treatment depending, for example, the film composition.
- the treatment comprises a plasma processing chamber.
- the plasma changes at least one property of the annealed film 25 .
- the treatment changes a property of the annealed film 25 on the first surface 22 a differently than on the second surface 23 a so that there are differences between the treated film 26 a and treated film 26 b.
- the treatment removes the annealed film from the second surface 23 a .
- the substrate 21 may be processed without an etch process (described below). In an embodiment of this sort, the process can repeat by moving the substrate back to the process station 11 .
- the processing tool 10 includes an etch station as process station 14 .
- the substrate 21 can be moved from the process station 13 to process station 14 .
- the substrate 21 is exposed to an etch process which can selectively remove the treated film 26 b from the second surface 23 a relative to the treated film 26 a from the first surface 22 a .
- the thickness of the treated film 26 a may be reduced as part of the etch process, while the treated film 26 b is substantially completely removed (>95% by weight).
- the etch station can be any suitable etch chamber that can selectively remove the film 26 b from the second surface 23 a relative to the film 26 a from the first surface 22 a .
- the etch station comprises one or more of a chemical etch, a reactive ion etch or an isotropic etch chamber.
- the process 500 determines whether a predetermined thickness of film 26 a has been formed. If not, the process 500 returns to 520 to deposit film 24 on the substrate. If a predetermined thickness has been formed, as shown in FIG. 1H , the process 500 continues to 570 for optional further processing.
- the thickness of the film 26 a is measured through an inline or external process. In some embodiments, the thickness of the film 26 a is measured in situ. In some embodiments, the thickness of the film 26 a is determined by measuring one or more of vertical thickness, critical dimension (CD), spacer width and/or spacer height. In some embodiments, the predetermined thickness of film 26 a is formed through a number of repeated cycles.
- CD critical dimension
- the deposition, anneal, treatment and optional etch processes can be repeated to form a film 26 a of a predetermined thickness, as shown in FIG. 1H .
- the predetermined thickness of some embodiments is greater than or equal to about 100 ⁇ , 200 ⁇ , 300 ⁇ , 400 ⁇ , 500 ⁇ , 600 ⁇ , 700 ⁇ , 800 ⁇ , 900 ⁇ or 1000 ⁇ .
- the controller 16 includes a central processing unit, a memory, and support circuits.
- the controller 16 may control the process stations or processing chambers directly, or via computers (or controllers) associated with particular process chamber and/or support system components.
- the controller 16 may be one of any form of general-purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors.
- the memory or computer readable medium of the controller may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, optical storage media (e.g., compact disc or digital video disc), flash drive, or any other form of digital storage, local or remote.
- the support circuits are coupled to the CPU for supporting the processor in a conventional manner.
- the controller 16 can include one or more configurations which can include any commands or functions to control flow rates, gas valves, gas sources or other processes for performing the various configurations.
- the various configurations of the controller can allow control of the process stations and movements of the substrate support through one or more motors, actuators, valves, flow controllers and/or heaters to enable the controller to execute the configuration.
- the controller 16 has one or more configurations to operate the processing tool 10 including process stations 11 , 12 , 13 , 14 and substrate support 15 .
- the controller comprises one or more of: a first configuration to move a wafer sequentially from the deposition chamber to the anneal chamber to the treatment chamber; a second configuration to deposit a layer on a substrate in the deposition chamber; a third configuration to anneal a layer on the substrate in the anneal chamber; and a fourth configuration to plasma treat the annealed layer in the treatment chamber.
- the process stations include an etch station and the first configuration moves a wafer sequentially from the deposition chamber to the anneal chamber to the treatment chamber to the etch chamber, and the controller has a fifth configuration to perform an etch process on a wafer in the etch chamber.
- the controller is configured to deposit a film in the deposition chamber to a thickness (e.g., less than or equal to about 15 ⁇ ), move the substrate to the anneal chamber to anneal the film, move the substrate to the treatment chamber to expose the film to plasma, and move the substrate to the etch chamber to selectively etch the film from some portions of the substrate.
- a thickness e.g., less than or equal to about 15 ⁇
- the controller is configured to repeat deposition, anneal, treatment and etch processes to build a film of a predetermined thickness.
- One or more embodiments of the disclosure use spatial separation between two or more processing environments. Some embodiments advantageously provide apparatus and methods to maintain separation of incompatible gases. Some embodiments advantageously provide apparatus and methods including optimizable plasma processing. Some embodiments advantageously provide apparatus and methods that allow for a differentiated thermal dosing environment, a differentiated plasma treatment environment and other environments.
- One or more embodiments of the disclosure are directed to processing chambers having four processing environments. Some embodiments have more than four and some embodiments have less than four.
- the processing environments can be mounted coplanar to the wafer(s) that are moving in a horizontal plane.
- the process environments are placed in a circular arrangement.
- a rotatable structure with one to four (or more) individual wafer heaters mounted thereon moves the wafers in a circular path with a diameter similar to the process environments.
- Each heater may be temperature controlled and may have one or multiple concentric zones.
- the rotatable structure could be lowered so that a vacuum robot could pick finished wafers and place unprocessed wafers on pins located above each wafer heater (in the lower Z position).
- each wafer can be under an independent environment until the process is finished, then rotatable structure can rotate to move the wafers on the heaters to the next environment (90° rotation for four stations, 120° rotation if three stations) for processing.
- Some embodiments of the disclosure advantageously provide spatial separation for ALD with incompatible gases. Some embodiments allow for higher throughput and tool resource utilization than a traditional time-domain or spatial process chamber.
- Each process environment can operate at a different pressure.
- the heater rotation has Z direction motion so each heater can be sealed into a chamber.
- Some embodiments advantageously provide plasma environments that can include one or more of microwave, ICP, parallel plate CCP or 3 electrode CCP.
- the entire wafer can be immersed in plasma; eliminating the plasma damage from non-uniform plasma across the wafer.
- a small gap between the showerhead and the wafer can be used to increase dose gas utilization and cycle time speed.
- Precise showerhead temperature control and high operating range up to 230° C.
- the showerheads can include small gas holes ( ⁇ 200 ⁇ m), a high number of gas holes (many thousands to greater than 10 million) and recursively fed gas distribution inside the showerhead using small distribution volume to increase speed.
- the small size and high number gas holes can be created by laser drilling or dry etching. When a wafer is close to the showerhead, there is turbulence experienced from the gas going through the vertical holes towards the wafer. Some embodiments allow for a slower velocity gas through the showerhead using a large number of holes spaced close together achieving a uniform distribution to the wafer surface.
- Some embodiments are directed to integrated processing platforms using a plurality of chambers on a single tool.
- the processing platform can have a variety of chambers that can perform different processes.
- Some embodiments of the disclosure are directed to apparatus and methods to move wafer(s) attached to a wafer heater(s) from one environment to another environment.
- the rapid movement can be enabled by electrostatically chucking (or clamping) the wafer(s) to the heater(s).
- the movement of the wafers can be in linear or circular motion.
- Some embodiments of the disclosure are directed to methods of processing one or more substrates. Examples include, but are not limited to, running one wafer on one heater to a plurality of different sequential environments spatially separated; running two wafers on two wafer heaters to three environments (two environments the same and one different environment between the two similar environments); wafer one sees environment A then B, and repeats, while wafer two sees B then A and repeats; one environment remaining idle (without wafer); running two wafers in two first environments and two second environments where both wafers see the same environments at the same time (i.e., both wafers in A then both go to B); four wafers with two A and two B environments; and two wafers processing in A's while the other two wafers are processing in B's.
- wafers are exposed to environment A and environment B repeatedly, and then exposed to a third environment located in the same chamber.
- wafers go through a plurality of chambers for processing where at least one of the chambers does sequential processing with a plurality of spatially separated environments within the same chamber.
- Some embodiments are directed to apparatus with spatially separated processing environments within the same chamber where the environments are at significantly different pressures (e.g., one at ⁇ 100 mT another at >3 T).
- the heater rotation robot moves in the z-axis to seal each wafer/heater into the spatially separated environments.
- Some embodiments include a structure built above the chamber with a vertical structural member applying a force upward to the center of the chamber lid to eliminate deflection caused by the pressure of atmosphere on the topside and the vacuum on the other side.
- the magnitude of force of the structure above can be mechanically adjusted based on the deflection of the top plate.
- the force adjustment can be done automatically using a feedback circuit and force transducer or manually using, for example, a screw that can be turned by an operator.
- FIGS. 2 through 6 illustrate support assemblies 100 in accordance with one or more embodiments of the disclosure.
- the support assembly 100 includes a rotatable center base 110 .
- the rotatable center base 110 can have a symmetrical or asymmetrical shape and defines a rotational axis 111 .
- the rotational axis 111 extends in a first direction.
- the first direction may be referred to as the vertical direction; however, it will be understood that the use of the term “vertical” in this manner is not limited to a direction normal to the pull of gravity.
- the support assembly 100 includes at least two support arms 120 connected to and extending from the center base 110 .
- the support arms 120 have an inner end 121 and an outer end 122 .
- the inner end 121 is in contact with the center base 110 so that when the center base 110 rotates around the rotational axis 111 , the support arms 120 rotate as well.
- the support arms 120 can be connected to the center base 110 at the inner end 121 by fasteners (e.g., bolts) or by being integrally formed with the center base 110 .
- the support arms 120 extend orthogonal to the rotational axis 111 so that one of the inner ends 121 or outer ends 122 are further from the rotational axis 111 than the other of the inner ends 121 and outer ends 122 on the same support arm 120 .
- the inner end 121 of the support arm 120 is closer to the rotational axis 111 than the outer end 122 of the same support arm 120 .
- the number of support arms 120 in the support assembly 100 can vary. In some embodiments, there are at least two support arms 120 . In some embodiments, there are three support arms 120 . In some embodiments, there are four support arms 120 . In some embodiments, there are five support arms 120 . In some embodiments, there are six support arms 120 .
- the support arms 120 can be arranged symmetrically around the center base 110 .
- each of the support arms 120 are positioned at 90° intervals around the center base 110 .
- the support arms 120 are positioned at 120° intervals around the center base 110 .
- a heater 130 is positioned at the outer end 122 of the support arms 120 .
- each support arm 120 has a heater 130 .
- the center of the heaters 130 are located at a distance from the rotational axis 111 so that upon rotation of the center base 110 the heaters 130 move in a circular path.
- the heaters 130 have a support surface 131 which can support a wafer.
- the heater 130 support surfaces 131 are substantially coplanar.
- substantially coplanar means that the planes formed by the individual support surfaces 131 are within ⁇ 5°, ⁇ 4°, ⁇ 3°, ⁇ 2° or ⁇ 1° of the planes formed by the other support surfaces 131 .
- the heaters 130 are positioned directly on the outer end 122 of the support arms 120 . In some embodiments, as illustrated in the drawings, the heaters 130 are elevated above the outer end 122 of the support arms 120 by a heater standoff 134 .
- the heater standoffs 134 can be any size and length to increase the height of the heaters 130 .
- a channel 136 is formed in one or more of the center base 110 , the support arms 120 and/or the heater standoffs 134 .
- the channel 136 can be used to route electrical connections or to provide a gas flow.
- the heaters can be any suitable type of heater known to the skilled artisan.
- the heater is a resistive heater with one or more heating elements within a heater body.
- the heaters 130 of some embodiments include additional components.
- the heaters may comprise an electrostatic chuck.
- the electrostatic chuck can include various wires and electrodes so that a wafer positioned on the heater support surface 131 can be held in place while the heater is moved. This allows a wafer to be chucked onto a heater at the beginning of a process and remain in that same position on that same heater while moving to different process regions.
- the heater 130 and support surface 131 can include one or more gas outlets to provide a flow of backside gas. This may assist in the removal of the wafer from the support surface 131 .
- the support surface 131 includes a plurality of openings 137 and a gas channel 138 .
- the openings 137 and/or gas channel 138 can be in fluid communication with one or more of a vacuum source or a gas source (e.g., a purge gas).
- the support assembly 100 include a sealing platform 140 .
- the sealing platform has a top surface 141 , a bottom surface and a thickness.
- the sealing platform 140 can be positioned around the heaters 130 to help provide a seal or barrier to minimize gas flowing to a region below the support assembly 100 .
- the sealing platforms 140 are ring shaped and are positioned around each heater 130 .
- the sealing platforms 140 are located below the heater 130 so that the top surface 141 of the sealing platform 140 is below the support surface 131 of the heater.
- the sealing platform 140 is a single component that surrounds all of the heaters 130 with a plurality of openings 142 to allow access to the support surface 131 of the heaters 130 .
- the openings 142 can allow the heaters to pass through the sealing platform 140 .
- the sealing platform 140 is fixed so that the sealing platform 140 moves vertically and rotates with the heaters 130 .
- the sealing platform 140 has a top surface 141 forming a major plane that is substantially parallel with a major plane formed by the support surface 131 of the heater 130 , as shown in FIG. 5 .
- the sealing platform 140 has a top surface 141 forming a major plane that is a distance above the major plane of the support surface 131 by an amount substantially equal to the thickness of a wafer to be processed so that the wafer surface is coplanar with the top surface 141 of the sealing platform 140 , as shown in FIG. 4 .
- the sealing platform 140 is supported by support post 127 .
- the support post 127 may have utility in preventing sagging of the center of the sealing platform 140 when a single component platform is used.
- the support assembly 100 includes at least one motor 150 .
- the at least one motor 150 is connected to the center base 110 and is configured to rotate the support assembly 100 around the rotational axis 111 .
- the at least one motor is configured to move the center base 110 in a direction along the rotational axis 111 .
- motor 155 is connected to motor 150 and can move the support assembly 100 in the Z-axis or vertically.
- the processing chamber 200 has a housing 202 with walls 204 , a bottom 206 and a top 208 which define an interior volume 209 .
- the embodiment illustrated in FIG. 6 does not show the top 208 .
- the processing chamber 200 includes a plurality of process stations 210 .
- the process stations 210 are located in the interior volume 209 of the housing 202 and are positioned in a circular arrangement around the rotational axis 111 .
- Each process station 210 comprises a gas injector 212 having a front face 214 .
- the front faces 214 of each of the gas injectors 212 are substantially coplanar.
- the process stations 210 can be configured to perform any suitable process and provide any suitable process conditions.
- the type of gas injector 212 used will depend on, for example, the type of process being performed and the type of process chamber.
- a process station 210 configured to operate as an atomic layer deposition apparatus may have a showerhead or vortex type injector.
- a process station 210 configured to operate as a plasma station may have one or more electrode and grounded plate configuration to generate a plasma while allowing a plasma gas to flow toward the wafer.
- the embodiment illustrated in FIG. 7 has a different type of process station 210 on the left side of the drawing than on the right side of the drawing.
- Suitable process stations 210 include, but are not limited to, thermal processing stations, microwave plasma, three-electrode CCP, ICP, parallel plate CCP, UV exposure, laser processing, pumping chambers, annealing stations and metrology stations.
- one or more vacuum streams and purge gas streams can be used to help isolate one process station 210 from an adjacent process station 210 .
- a purge gas plenum 260 is in fluid communication with a purge gas port 261 at the outer boundary of the process stations 210 .
- a vacuum plenum 265 is in fluid communication with a vacuum port 266 .
- the purge gas port 261 and the vacuum port 266 can extend around the perimeter of the process station 210 to form a gas curtain. The gas curtain can help minimize or eliminate leakage of process gases into the interior volume 209 .
- the number of process stations 210 can vary with the number of heaters 130 and support arms 120 . In some embodiments, there are an equal number of heaters 130 , support arms 120 and process stations 210 . In some embodiments, the heaters 130 , support arms 120 and process stations 210 are configured to that each of the support surfaces 131 of the heaters 130 can be located adjacent the front faces 214 of different process stations 210 at the same time. Stated differently, each of the heaters is positioned in front of a process station at the same time.
- FIG. 8 shows a processing platform 300 in accordance with one or more embodiment of the disclosure.
- the embodiment shown in FIG. 8 is merely representative of one possible configuration and should not be taken as limiting the scope of the disclosure.
- the processing platform 300 has different numbers of process chambers 200 , buffer stations 320 and robot 330 configurations.
- the exemplary processing platform 300 includes a central transfer station 310 which has a plurality of sides 311 , 312 , 313 , 314 .
- the transfer station 310 shown has a first side 311 , a second side 312 , a third side 313 and a fourth side 314 . Although four sides are shown, those skilled in the art will understand that there can be any suitable number of sides to the transfer station 310 depending on, for example, the overall configuration of the processing platform 300 .
- the transfer station 310 has a robot 330 positioned therein.
- the robot 330 can be any suitable robot capable of moving a wafer during processing.
- the robot 330 has a first arm 331 and a second arm 332 .
- the first arm 331 and second arm 332 can be moved independently of the other arm.
- the first arm 331 and second arm 332 can move in the x-y plane and/or along the z-axis.
- the robot 330 includes a third arm or a fourth arm (not shown). Each of the arms can move independently of other arms.
- the embodiment illustrated includes six processing chamber 200 with two each connected to the second side 312 , third side 313 and fourth side 314 of the central transfer station 310 .
- Each of the processing chambers 200 can be configured to perform different processes.
- the processing platform 300 can also include one or more buffer station 320 connected to the first side 311 of the central transfer station 310 .
- the buffer stations 320 can perform the same or different functions.
- the buffer stations may hold a cassette of wafers which are processed and returned to the original cassette, or one of the buffer stations may hold unprocessed wafers which are moved to the other buffer station after processing.
- one or more of the buffer stations are configured to pre-treat, pre-heat or clean the wafers before and/or after processing.
- the processing platform 300 may also include one or more slit valves 318 between the central transfer station 310 and any of the processing chambers 200 .
- the slit valves 318 can open and close to isolate the environment within the processing chamber 200 from the environment within the central transfer station 310 . For example, if the processing chamber will generate plasma during processing, it may be helpful to close the slit valve for that processing chamber to prevent stray plasma from damaging the robot in the transfer station.
- the processing platform 300 can be connected to a factory interface 350 to allow wafers or cassettes of wafers to be loaded into the processing platform 300 .
- a robot 355 within the factory interface 350 can be used to move the wafers or cassettes into and out of the buffer stations.
- the wafers or cassettes can be moved within the processing platform 300 by the robot 330 in the central transfer station 310 .
- the factory interface 350 is a transfer station of another cluster tool (i.e., another multiple chamber processing platform).
- a controller 395 may be provided and coupled to various components of the processing platform 300 to control the operation thereof.
- the controller 395 can be a single controller that controls the entire processing platform 300 , or multiple controllers that control individual portions of the processing platform 300 .
- the processing platform 300 may include separate controllers for each of the individual processing chambers 200 , central transfer station 310 , factory interface 350 and robots 330 .
- the controller 395 includes a central processing unit (CPU) 396 , a memory 397 , and support circuits 398 .
- the controller 395 may control the processing platform 300 directly, or via computers (or controllers) associated with particular process chamber and/or support system components.
- the controller 395 may be one of any form of general-purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors.
- the memory 397 or computer readable medium of the controller 395 may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, optical storage media (e.g., compact disc or digital video disc), flash drive, or any other form of digital storage, local or remote.
- the support circuits 398 are coupled to the CPU 396 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like.
- One or more processes may be stored in the memory 398 as software routine that may be executed or invoked to control the operation of the processing platform 300 or individual processing chambers in the manner described herein.
- the software routine may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU 396 .
- FIGS. 9A through 9I illustrate various configurations of processing chambers 200 with different process stations 210 .
- the lettered circles represent the different process stations 210 and process conditions.
- FIG. 9A there are four process stations 210 each with a different letter. This represents four process stations 210 with each station having different conditions than the other stations.
- a process could occur by moving the heaters with wafers from stations A through D. After exposure to D, the cycle can continue or reverse.
- FIG. 9B four wafers can be processed at the same time with the wafers being moved on the heaters back and forth between the A and B positions. Two wafers could start in the A positions and two wafers in the B positions.
- the independent process stations 210 allow for the two of the stations to be turned off during the first cycle so that each wafer starts with an A exposure.
- FIG. 9B might also be useful in processing two wafers in the four process stations 210 . This might be particularly useful if one of the processes is at a very different pressure or the A and B process times are very different.
- three wafers might be processed in a single processing chamber 200 in and ABC process.
- One station can either be turned off or perform a different function (e.g., pre-heating).
- two wafers can be processed in an AB-Treat process.
- wafers might be placed on the B heaters only.
- a quarter turn clockwise will place one wafer in the A station and the second wafer in the T station.
- Turning back will move both wafers to the B stations and another quarter turn counter-clockwise will place the second wafer in the A station and the first wafer in the B station.
- up to four wafers can be processed at the same time.
- the A station is configured to perform a CVD or ALD process, four wafers can be processed simultaneously.
- FIGS. 9F through 9I show similar types of configurations for a processing chamber 200 with three process stations 210 .
- a single wafer (or more than one) can be subjected to an ABC process.
- two wafers can be subjected to an AB process by placing one in the A position and the other in one of the B positions. The wafers can then be moved back and forth so that the wafer starting in the B position moves to the A position in the first move and then back to the same B position.
- FIG. 9H a wafer can be subjected to an AB-Treat process.
- three wafers can be processed at the same time.
- FIGS. 10A and 10B illustrate another embodiment of the disclosure.
- the heater 130 on support arm 120 has been rotated to a position beneath process station 210 so that wafer 101 is adjacent the gas injector 212 .
- An O-ring 129 on the support arm 120 or on an outer portion of the heater 130 , is in a relaxed state.
- the support arm 120 and heater 130 are moved toward the process station 210 so that the support surface 131 of the heater 130 is moved to contact or nearly contact the front face 214 of the process station 210 , as shown in FIG. 10B .
- O-ring 129 is compressed forming a seal around the outer edge of the support arm 120 or outer portion of the heater 130 . This allows the wafer 101 to be moved as close the injector 212 as possible to minimize the volume of the reaction region 219 so that the reaction region 219 can be rapidly purged.
- Gases which might flow out of the reaction region 219 are evacuated through vacuum port 266 into vacuum plenum 265 and to an exhaust or foreline.
- a purge gas curtain outside of the vacuum port 266 can be generated by purge gas plenum 260 and purge gas port 261 .
- a purge gas can be flowed through gap 237 between the heater 130 and the support arm 120 to further curtain off the reaction region 219 and prevent reactive gases from flowing into the interior volume 209 of the processing chamber 200 .
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Apparatus and methods to process one or more wafers are described. A substrate is exposed to a plurality of process stations to deposit, anneal, treat and optionally etch a film in small increments to provide self-aligned growth of the film on a substrate surface.
Description
- This application is a continuation of U.S. application Ser. No. 16/412,696, filed May 15, 2019, which claims priority to U.S. Provisional Application No. 62/672,560, filed May 16, 2018, the entire disclosure of which is hereby incorporated by reference herein.
- The present disclosure relates generally to apparatus for depositing thin films. In particular, the disclosure relates to apparatus having a plurality of separate processing stations to deposit a self-aligned film on a substrate.
- Current atomic layer deposition (ALD) processes have a number of potential issues and difficulties. Many ALD chemistries (e.g., precursors and reactants) are “incompatible”, which means that the chemistries cannot be mixed together. If the incompatible chemistries mix, a chemical vapor deposition (CVD) process, instead of the ALD process could occur. The CVD process generally has less thickness control than the ALD process and/or can result in the creation of gas phase particles which can cause defects in the resultant device. For a traditional time-domain ALD process in which a single reactive gas is flowed into the processing chamber at a time, a long purge/pump out time occurs so that the chemistries are not mixed in the gas phase. A spatial ALD chamber can move one or more wafer(s) from one environment to a second environment faster than a time-domain ALD chamber can pump/purge, resulting in higher throughput.
- With electronic device scaling (e.g., <10 nm), it is extremely hard to form self-aligned features. Any misalignment results in shorting, ruining the device performance. Additionally, self-aligned processes, such as silicide, etc. result in lateral growth due to large diffusion. The lateral growth can also result in shorting. Current state of the art self-aligned schemes use multiple processes, such as deposition, anneal, removal, to create self-aligned features.
- Therefore, there is a need in the art for improved deposition apparatus and methods of forming self-aligned films with little or no misalignment of films.
- One or more embodiments of the disclosure are directed to processing tools comprising a plurality of process stations. Each process station provides a processing region separated from processing regions of adjacent process stations. A substrate support has a support surface to support a wafer for processing. The substrate support is configured to move the wafer between at least two of the plurality of process stations. A controller is connected to the substrate support and the plurality of process stations. The controller is configured to activate the substrate support to move the wafer between stations, and to control a process occurring in each of the process stations. The plurality of process stations comprises a deposition station, an anneal station, and a treatment station.
- Additional embodiments of the disclosure are directed to methods for depositing a film. A substrate is moved to a deposition station to deposit a film on a surface of the substrate. The substrate is moved to an anneal station to anneal the film on the substrate. The substrate is moved to a treatment station to treat the annealed film with a plasma. Each of the deposition station, anneal station and treatment station are part of an integrated processing tool with a controller configured to move the substrate, deposit the film, anneal the film and treat the annealed film.
- Further embodiments of the disclosure are directed to methods for depositing a film. A substrate having a first substrate surface and a second substrate surface is provided in a deposition station. The first substrate surface comprises a different material than the second substrate surface. A film is deposited on the first substrate surface and the second substrate surface in the deposition station. The film has a thickness less than or equal to about 20 Å. The substrate is moved from the deposition station to an anneal station to anneal the film and form an annealed film. The substrate is moved to a treatment station to treat the annealed film with a plasma to form a treated annealed film. The plasma changes at least one property of the film on at least one of the first substrate surface or the second substrate surface. The substrate is moved to an etch station to selectively etch the film from the second substrate surface relative to the first substrate surface. Depositing the film, annealing the film, treating the film and selectively etching the film are repeated to selectively deposit a film having at thickness greater than or equal to about 1000 Å on the first substrate surface.
- So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
-
FIG. 1A shows a schematic representation of a processing tool in accordance with one or more embodiment of the disclosure; -
FIGS. 1B through 1H illustrate a deposition process in accordance with one or more embodiment of the disclosure; -
FIG. 1J illustrates a flowchart of the deposition process illustrated inFIGS. 1B through 1H in accordance with one or more embodiment of the disclosure; -
FIG. 2 shows a bottom perspective view of a support assembly in accordance with one or more embodiment of the disclosure; -
FIG. 3 shows a top perspective view of a support assembly in accordance with one or more embodiment of the disclosure; -
FIG. 4 shows a top perspective view of a support assembly in accordance with one or more embodiment of the disclosure; -
FIG. 5 shows a schematic cross-sectional view of the support assembly ofFIG. 4 taken along line IV-IV; -
FIG. 6 shows a cross-sectional perspective view of a processing chamber in accordance with one or more embodiment of the disclosure; -
FIG. 7 shows a cross-sectional view of a processing chamber in accordance with one or more embodiment of the disclosure; -
FIG. 8 shows a schematic representation of a processing platform in accordance with one or more embodiment of the disclosure; -
FIGS. 9A through 9I shows a schematic views of process stations in a processing chamber in accordance with one or more embodiment of the disclosure; and -
FIGS. 10A and 10B shows a schematic representation of process in accordance with one or more embodiment of the disclosure. - Before describing several exemplary embodiments of the disclosure, it is to be understood that the disclosure is not limited to the details of construction or process steps set forth in the following description. The disclosure is capable of other embodiments and of being practiced or being carried out in various ways.
- A “substrate” as used herein, refers to any substrate or material surface formed on a substrate upon which film processing is performed during a fabrication process. For example, a substrate surface on which processing can be performed include materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxides, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, without limitation, semiconductor wafers. Substrates may be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal and/or bake the substrate surface. In addition to film processing directly on the surface of the substrate itself, in the present disclosure, any of the film processing steps disclosed may also be performed on an under-layer formed on the substrate as disclosed in more detail below, and the term “substrate surface” is intended to include such under-layer as the context indicates. Thus for example, where a film/layer or partial film/layer has been deposited onto a substrate surface, the exposed surface of the newly deposited film/layer becomes the substrate surface.
- As used in this specification and the appended claims, the terms “precursor”, “reactant”, “reactive gas” and the like are used interchangeably to refer to any gaseous species that can react with the substrate surface, or with a film formed on the substrate surface.
- Some embodiments of the disclosure provide integrated toolsets which allow for the fabrication of self-aligned features based on underlying substrate materials. Some embodiments allow for the growth of different films on different features or surfaces (e.g., metal silicide on metal and SiN on dielectric). In some embodiments, the integrated tool comprises multiple stations with or without a rotating platform to deposit, anneal, treat the surface and optional removal processes. The sequence can be repeated to allow for very controlled growth in the feature without creating lateral growth (encroachment). Embodiments of the disclosure can be used with planar substrates, substrates with features (e.g., vias, trenches, fins) and with hardmask/patterning applications. A planar application might form a metal silicide film on a metal surface and a nitride film on an adjacent dielectric surface. An application using surface features include, but are not limited to, formation of vias over metal/oxide surfaces to that a metal silicide forms on the metal and a nitride forms on the oxide. In an exemplary hardmask/patterning application in which a metal is on a spacer material, a metal silicide can be formed on the bottom and top surfaces.
-
FIG. 1A illustrates anintegrated processing tool 10 for forming self-aligned features. Theprocessing tool 10 has a plurality ofprocess stations processing region - A substrate support 15 (shown as a dashed line) has a support surface to support a substrate or wafer for processing. The substrate support is configured to move a wafer between at least two of the plurality of processing stations. In some embodiments, the substrate support is configured to move the wafer between all of the process stations. As used in this manner, the term “between” includes the processing regions of the individual process stations.
- A
controller 16 can be connected to thesubstrate support 15 and the plurality ofprocess stations substrate support 15 to move the wafer between stations, and to control a process occurring in each of the process stations. In some embodiments, the plurality ofprocess stations - Referring to
FIGS. 1B through 1H , an exemplary process is illustrated with a planar substrate having two different surface chemistries.FIG. 1J illustrates a flowchart of theprocess 500 illustrated inFIGS. 1B through 1H . At 510, the substrate is provided, or positioned, in an environment for processing. For example, the substrate can be positioned in theprocess station 11 and is therefore provided for processing. As shown inFIG. 1B , thesubstrate 21 has afirst material 22 with afirst surface 22 a and asecond material 23 with asecond surface 23 a that is different than thefirst material 22 and thefirst surface 22 a. Theprocess station 11 can include any suitable deposition chamber that can form the film. In some embodiments, the deposition station comprises one or more of an atomic layer deposition (ALD) chamber, plasma enhanced atomic layer deposition (PEALD), a chemical vapor deposition (CVD) chamber, or a plasma enhanced chemical vapor deposition (PECVD) chamber. In some embodiments, thefirst material 22 comprises a metal (e.g., cobalt, copper, titanium). In some embodiments, thesecond material 23 comprises a dielectric (e.g., an oxide). - In some embodiments, the process stations may comprise exposure to a portion of a deposition process. In some embodiments,
process station 11 may expose a substrate to a first reactant andprocess station 12 may expose the substrate to a second reactant to react with the first reactant and deposit a film. In this regard, two or more stations may be used for a single deposition process. - At 520, in the deposition chamber of
process station 11, afilm 24 is formed on thesubstrate 21, as shown inFIG. 1C . Thefilm 24 can be formed conformally so that there is a substantially equal thickness on both thefirst material 22 and thesecond material 23, or can be selective to thefirst material 22 relative to thesecond material 23. The degree of selectivity can be in the range of about 1:1 to about 50:1 for the first material 22:second material 23. - The
film 24 can be formed to any suitable thickness. In some embodiments, thefilm 24 has a thickness less than or equal to about one monolayer of the material being deposited. In some embodiments, the thickness of thefilm 24 is greater than 0.1 Å up to about 10 Å, 15 Å, 20 Å, 25 Å, 30 Å, 35 Å or 40 Å. In some embodiments, the film comprises one or more of silicon, titanium, copper, cobalt, tungsten or aluminum. - After formation of the
film 24, thesubstrate 21 is moved fromprocess station 11 to processstation 12. As shown inFIG. 1D and at 530, thefilm 24 can be exposed to an anneal process inprocess station 12 to form an annealedfilm 25. In some embodiments, the anneal station comprises one or more of a laser anneal, thermal anneal or flash anneal chamber. - After forming the annealed
film 25, thesubstrate 21 is moved fromprocess station 12 to processstation 13. As shown inFIG. 1E and at 540, the annealedfilm 25 is treated to form treated film 26. The treatment can be any suitable treatment depending, for example, the film composition. In some embodiments, the treatment comprises a plasma processing chamber. The plasma changes at least one property of the annealedfilm 25. In some embodiments, the treatment changes a property of the annealedfilm 25 on thefirst surface 22 a differently than on thesecond surface 23 a so that there are differences between the treatedfilm 26 a and treatedfilm 26 b. - In some embodiments, as shown in
FIG. 1F , the treatment removes the annealed film from thesecond surface 23 a. In these embodiments, thesubstrate 21 may be processed without an etch process (described below). In an embodiment of this sort, the process can repeat by moving the substrate back to theprocess station 11. - In some embodiments, the
processing tool 10 includes an etch station asprocess station 14. In an embodiment like that ofFIG. 1E in which the properties of the film are different on thefirst surface 22 a than on thesecond surface 23 a, thesubstrate 21 can be moved from theprocess station 13 to processstation 14. As shown inFIG. 1G and at 550, in some embodiments, thesubstrate 21 is exposed to an etch process which can selectively remove the treatedfilm 26 b from thesecond surface 23 a relative to the treatedfilm 26 a from thefirst surface 22 a. As illustrated inFIG. 1G , the thickness of the treatedfilm 26 a may be reduced as part of the etch process, while the treatedfilm 26 b is substantially completely removed (>95% by weight). - The etch station can be any suitable etch chamber that can selectively remove the
film 26 b from thesecond surface 23 a relative to thefilm 26 a from thefirst surface 22 a. In some embodiments, the etch station comprises one or more of a chemical etch, a reactive ion etch or an isotropic etch chamber. - At 560, it is determined whether a predetermined thickness of
film 26 a has been formed. If not, theprocess 500 returns to 520 todeposit film 24 on the substrate. If a predetermined thickness has been formed, as shown inFIG. 1H , theprocess 500 continues to 570 for optional further processing. - In some embodiments, the thickness of the
film 26 a is measured through an inline or external process. In some embodiments, the thickness of thefilm 26 a is measured in situ. In some embodiments, the thickness of thefilm 26 a is determined by measuring one or more of vertical thickness, critical dimension (CD), spacer width and/or spacer height. In some embodiments, the predetermined thickness offilm 26 a is formed through a number of repeated cycles. - In some embodiments, the deposition, anneal, treatment and optional etch processes can be repeated to form a
film 26 a of a predetermined thickness, as shown inFIG. 1H . The predetermined thickness of some embodiments is greater than or equal to about 100 Å, 200 Å, 300 Å, 400 Å, 500 Å, 600 Å, 700 Å, 800 Å, 900 Å or 1000 Å. - In some embodiments, the
controller 16 includes a central processing unit, a memory, and support circuits. Thecontroller 16 may control the process stations or processing chambers directly, or via computers (or controllers) associated with particular process chamber and/or support system components. Thecontroller 16 may be one of any form of general-purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. The memory or computer readable medium of the controller may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, optical storage media (e.g., compact disc or digital video disc), flash drive, or any other form of digital storage, local or remote. The support circuits are coupled to the CPU for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like. One or more processes may be stored in the memory as software routine that may be executed or invoked to control the operation of the apparatus or individual components in the manner described herein. Thecontroller 16 can include one or more configurations which can include any commands or functions to control flow rates, gas valves, gas sources or other processes for performing the various configurations. The various configurations of the controller can allow control of the process stations and movements of the substrate support through one or more motors, actuators, valves, flow controllers and/or heaters to enable the controller to execute the configuration. - In some embodiments, the
controller 16 has one or more configurations to operate theprocessing tool 10 includingprocess stations substrate support 15. In some embodiments, the controller comprises one or more of: a first configuration to move a wafer sequentially from the deposition chamber to the anneal chamber to the treatment chamber; a second configuration to deposit a layer on a substrate in the deposition chamber; a third configuration to anneal a layer on the substrate in the anneal chamber; and a fourth configuration to plasma treat the annealed layer in the treatment chamber. In some embodiments, the process stations include an etch station and the first configuration moves a wafer sequentially from the deposition chamber to the anneal chamber to the treatment chamber to the etch chamber, and the controller has a fifth configuration to perform an etch process on a wafer in the etch chamber. - In some embodiments, the controller is configured to deposit a film in the deposition chamber to a thickness (e.g., less than or equal to about 15 Å), move the substrate to the anneal chamber to anneal the film, move the substrate to the treatment chamber to expose the film to plasma, and move the substrate to the etch chamber to selectively etch the film from some portions of the substrate.
- In some embodiments, the controller is configured to repeat deposition, anneal, treatment and etch processes to build a film of a predetermined thickness.
- One or more embodiments of the disclosure use spatial separation between two or more processing environments. Some embodiments advantageously provide apparatus and methods to maintain separation of incompatible gases. Some embodiments advantageously provide apparatus and methods including optimizable plasma processing. Some embodiments advantageously provide apparatus and methods that allow for a differentiated thermal dosing environment, a differentiated plasma treatment environment and other environments.
- One or more embodiments of the disclosure are directed to processing chambers having four processing environments. Some embodiments have more than four and some embodiments have less than four. The processing environments can be mounted coplanar to the wafer(s) that are moving in a horizontal plane. The process environments are placed in a circular arrangement. A rotatable structure with one to four (or more) individual wafer heaters mounted thereon moves the wafers in a circular path with a diameter similar to the process environments. Each heater may be temperature controlled and may have one or multiple concentric zones. For wafer loading, the rotatable structure could be lowered so that a vacuum robot could pick finished wafers and place unprocessed wafers on pins located above each wafer heater (in the lower Z position). In operation, each wafer can be under an independent environment until the process is finished, then rotatable structure can rotate to move the wafers on the heaters to the next environment (90° rotation for four stations, 120° rotation if three stations) for processing.
- Some embodiments of the disclosure advantageously provide spatial separation for ALD with incompatible gases. Some embodiments allow for higher throughput and tool resource utilization than a traditional time-domain or spatial process chamber. Each process environment can operate at a different pressure. The heater rotation has Z direction motion so each heater can be sealed into a chamber.
- Some embodiments advantageously provide plasma environments that can include one or more of microwave, ICP, parallel plate CCP or 3 electrode CCP. The entire wafer can be immersed in plasma; eliminating the plasma damage from non-uniform plasma across the wafer.
- In some embodiments, a small gap between the showerhead and the wafer can be used to increase dose gas utilization and cycle time speed. Precise showerhead temperature control and high operating range (up to 230° C.). Without being bound by theory, it is believed that the closer the showerhead temperature is to the wafer temperature, the better the wafer temperature uniformity.
- The showerheads can include small gas holes (<200 μm), a high number of gas holes (many thousands to greater than 10 million) and recursively fed gas distribution inside the showerhead using small distribution volume to increase speed. The small size and high number gas holes can be created by laser drilling or dry etching. When a wafer is close to the showerhead, there is turbulence experienced from the gas going through the vertical holes towards the wafer. Some embodiments allow for a slower velocity gas through the showerhead using a large number of holes spaced close together achieving a uniform distribution to the wafer surface.
- Some embodiments are directed to integrated processing platforms using a plurality of chambers on a single tool. The processing platform can have a variety of chambers that can perform different processes.
- Some embodiments of the disclosure are directed to apparatus and methods to move wafer(s) attached to a wafer heater(s) from one environment to another environment. The rapid movement can be enabled by electrostatically chucking (or clamping) the wafer(s) to the heater(s). The movement of the wafers can be in linear or circular motion.
- Some embodiments of the disclosure are directed to methods of processing one or more substrates. Examples include, but are not limited to, running one wafer on one heater to a plurality of different sequential environments spatially separated; running two wafers on two wafer heaters to three environments (two environments the same and one different environment between the two similar environments); wafer one sees environment A then B, and repeats, while wafer two sees B then A and repeats; one environment remaining idle (without wafer); running two wafers in two first environments and two second environments where both wafers see the same environments at the same time (i.e., both wafers in A then both go to B); four wafers with two A and two B environments; and two wafers processing in A's while the other two wafers are processing in B's. In some embodiments, wafers are exposed to environment A and environment B repeatedly, and then exposed to a third environment located in the same chamber.
- In some embodiments, wafers go through a plurality of chambers for processing where at least one of the chambers does sequential processing with a plurality of spatially separated environments within the same chamber.
- Some embodiments are directed to apparatus with spatially separated processing environments within the same chamber where the environments are at significantly different pressures (e.g., one at <100 mT another at >3 T). In some embodiments, the heater rotation robot moves in the z-axis to seal each wafer/heater into the spatially separated environments.
- Some embodiments include a structure built above the chamber with a vertical structural member applying a force upward to the center of the chamber lid to eliminate deflection caused by the pressure of atmosphere on the topside and the vacuum on the other side. The magnitude of force of the structure above can be mechanically adjusted based on the deflection of the top plate. The force adjustment can be done automatically using a feedback circuit and force transducer or manually using, for example, a screw that can be turned by an operator.
-
FIGS. 2 through 6 illustratesupport assemblies 100 in accordance with one or more embodiments of the disclosure. Thesupport assembly 100 includes arotatable center base 110. Therotatable center base 110 can have a symmetrical or asymmetrical shape and defines arotational axis 111. Therotational axis 111, as can be seen inFIG. 5 , extends in a first direction. The first direction may be referred to as the vertical direction; however, it will be understood that the use of the term “vertical” in this manner is not limited to a direction normal to the pull of gravity. - The
support assembly 100 includes at least twosupport arms 120 connected to and extending from thecenter base 110. Thesupport arms 120 have aninner end 121 and anouter end 122. Theinner end 121 is in contact with thecenter base 110 so that when thecenter base 110 rotates around therotational axis 111, thesupport arms 120 rotate as well. Thesupport arms 120 can be connected to thecenter base 110 at theinner end 121 by fasteners (e.g., bolts) or by being integrally formed with thecenter base 110. - In some embodiments, the
support arms 120 extend orthogonal to therotational axis 111 so that one of the inner ends 121 orouter ends 122 are further from therotational axis 111 than the other of the inner ends 121 andouter ends 122 on thesame support arm 120. In some embodiments, theinner end 121 of thesupport arm 120 is closer to therotational axis 111 than theouter end 122 of thesame support arm 120. - The number of
support arms 120 in thesupport assembly 100 can vary. In some embodiments, there are at least twosupport arms 120. In some embodiments, there are threesupport arms 120. In some embodiments, there are foursupport arms 120. In some embodiments, there are fivesupport arms 120. In some embodiments, there are sixsupport arms 120. - The
support arms 120 can be arranged symmetrically around thecenter base 110. For example, in asupport assembly 100 with foursupport arms 120, each of thesupport arms 120 are positioned at 90° intervals around thecenter base 110. In asupport assembly 100 with threesupport arms 120, thesupport arms 120 are positioned at 120° intervals around thecenter base 110. - A
heater 130 is positioned at theouter end 122 of thesupport arms 120. In some embodiments, eachsupport arm 120 has aheater 130. The center of theheaters 130 are located at a distance from therotational axis 111 so that upon rotation of thecenter base 110 theheaters 130 move in a circular path. - The
heaters 130 have asupport surface 131 which can support a wafer. In some embodiments, theheater 130 support surfaces 131 are substantially coplanar. As used in this manner, the term “substantially coplanar” means that the planes formed by the individual support surfaces 131 are within ±5°, ±4°, ±3°, ±2° or ±1° of the planes formed by the other support surfaces 131. - In some embodiments, the
heaters 130 are positioned directly on theouter end 122 of thesupport arms 120. In some embodiments, as illustrated in the drawings, theheaters 130 are elevated above theouter end 122 of thesupport arms 120 by aheater standoff 134. The heater standoffs 134 can be any size and length to increase the height of theheaters 130. - In some embodiments, a
channel 136 is formed in one or more of thecenter base 110, thesupport arms 120 and/or theheater standoffs 134. Thechannel 136 can be used to route electrical connections or to provide a gas flow. - The heaters can be any suitable type of heater known to the skilled artisan. In some embodiments, the heater is a resistive heater with one or more heating elements within a heater body.
- The
heaters 130 of some embodiments include additional components. For example, the heaters may comprise an electrostatic chuck. The electrostatic chuck can include various wires and electrodes so that a wafer positioned on theheater support surface 131 can be held in place while the heater is moved. This allows a wafer to be chucked onto a heater at the beginning of a process and remain in that same position on that same heater while moving to different process regions. - The
heater 130 andsupport surface 131 can include one or more gas outlets to provide a flow of backside gas. This may assist in the removal of the wafer from thesupport surface 131. As shown inFIGS. 2 and 3 , thesupport surface 131 includes a plurality ofopenings 137 and agas channel 138. Theopenings 137 and/orgas channel 138 can be in fluid communication with one or more of a vacuum source or a gas source (e.g., a purge gas). - Some embodiments of the
support assembly 100 include asealing platform 140. The sealing platform has atop surface 141, a bottom surface and a thickness. Thesealing platform 140 can be positioned around theheaters 130 to help provide a seal or barrier to minimize gas flowing to a region below thesupport assembly 100. In some embodiments, as shown inFIG. 3 , the sealingplatforms 140 are ring shaped and are positioned around eachheater 130. In the illustrated embodiment, the sealingplatforms 140 are located below theheater 130 so that thetop surface 141 of thesealing platform 140 is below thesupport surface 131 of the heater. In some embodiments, as shown inFIGS. 4 and 5 , thesealing platform 140 is a single component that surrounds all of theheaters 130 with a plurality ofopenings 142 to allow access to thesupport surface 131 of theheaters 130. Theopenings 142 can allow the heaters to pass through thesealing platform 140. In some embodiments, thesealing platform 140 is fixed so that thesealing platform 140 moves vertically and rotates with theheaters 130. In some embodiments, thesealing platform 140 has atop surface 141 forming a major plane that is substantially parallel with a major plane formed by thesupport surface 131 of theheater 130, as shown inFIG. 5 . In some embodiments, thesealing platform 140 has atop surface 141 forming a major plane that is a distance above the major plane of thesupport surface 131 by an amount substantially equal to the thickness of a wafer to be processed so that the wafer surface is coplanar with thetop surface 141 of thesealing platform 140, as shown inFIG. 4 . - In some embodiments, as shown in
FIGS. 4 and 5 , thesealing platform 140 is supported bysupport post 127. Thesupport post 127 may have utility in preventing sagging of the center of thesealing platform 140 when a single component platform is used. - In some embodiments, as illustrated in
FIG. 7 , thesupport assembly 100 includes at least onemotor 150. The at least onemotor 150 is connected to thecenter base 110 and is configured to rotate thesupport assembly 100 around therotational axis 111. In some embodiments, the at least one motor is configured to move thecenter base 110 in a direction along therotational axis 111. For example, inFIG. 7 ,motor 155 is connected tomotor 150 and can move thesupport assembly 100 in the Z-axis or vertically. - Referring to
FIGS. 6 and 7 , one or more embodiments of the disclosure are directed to processingchambers 200 that incorporate thesupport assembly 100. Theprocessing chamber 200 has ahousing 202 withwalls 204, a bottom 206 and a top 208 which define aninterior volume 209. The embodiment illustrated inFIG. 6 does not show the top 208. - The
processing chamber 200 includes a plurality ofprocess stations 210. Theprocess stations 210 are located in theinterior volume 209 of thehousing 202 and are positioned in a circular arrangement around therotational axis 111. Eachprocess station 210 comprises agas injector 212 having afront face 214. In some embodiments, the front faces 214 of each of thegas injectors 212 are substantially coplanar. - The
process stations 210 can be configured to perform any suitable process and provide any suitable process conditions. The type ofgas injector 212 used will depend on, for example, the type of process being performed and the type of process chamber. For example, aprocess station 210 configured to operate as an atomic layer deposition apparatus may have a showerhead or vortex type injector. Whereas, aprocess station 210 configured to operate as a plasma station may have one or more electrode and grounded plate configuration to generate a plasma while allowing a plasma gas to flow toward the wafer. The embodiment illustrated inFIG. 7 has a different type ofprocess station 210 on the left side of the drawing than on the right side of the drawing.Suitable process stations 210 include, but are not limited to, thermal processing stations, microwave plasma, three-electrode CCP, ICP, parallel plate CCP, UV exposure, laser processing, pumping chambers, annealing stations and metrology stations. - As shown in
FIG. 7 , one or more vacuum streams and purge gas streams can be used to help isolate oneprocess station 210 from anadjacent process station 210. Apurge gas plenum 260 is in fluid communication with apurge gas port 261 at the outer boundary of theprocess stations 210. Avacuum plenum 265 is in fluid communication with avacuum port 266. Thepurge gas port 261 and thevacuum port 266 can extend around the perimeter of theprocess station 210 to form a gas curtain. The gas curtain can help minimize or eliminate leakage of process gases into theinterior volume 209. - The number of
process stations 210 can vary with the number ofheaters 130 and supportarms 120. In some embodiments, there are an equal number ofheaters 130, supportarms 120 andprocess stations 210. In some embodiments, theheaters 130, supportarms 120 andprocess stations 210 are configured to that each of the support surfaces 131 of theheaters 130 can be located adjacent the front faces 214 ofdifferent process stations 210 at the same time. Stated differently, each of the heaters is positioned in front of a process station at the same time. -
FIG. 8 shows aprocessing platform 300 in accordance with one or more embodiment of the disclosure. The embodiment shown inFIG. 8 is merely representative of one possible configuration and should not be taken as limiting the scope of the disclosure. For example, in some embodiments, theprocessing platform 300 has different numbers ofprocess chambers 200,buffer stations 320 androbot 330 configurations. - The
exemplary processing platform 300 includes acentral transfer station 310 which has a plurality ofsides transfer station 310 shown has afirst side 311, asecond side 312, athird side 313 and afourth side 314. Although four sides are shown, those skilled in the art will understand that there can be any suitable number of sides to thetransfer station 310 depending on, for example, the overall configuration of theprocessing platform 300. - The
transfer station 310 has arobot 330 positioned therein. Therobot 330 can be any suitable robot capable of moving a wafer during processing. In some embodiments, therobot 330 has afirst arm 331 and asecond arm 332. Thefirst arm 331 andsecond arm 332 can be moved independently of the other arm. Thefirst arm 331 andsecond arm 332 can move in the x-y plane and/or along the z-axis. In some embodiments, therobot 330 includes a third arm or a fourth arm (not shown). Each of the arms can move independently of other arms. - The embodiment illustrated includes six
processing chamber 200 with two each connected to thesecond side 312,third side 313 andfourth side 314 of thecentral transfer station 310. Each of theprocessing chambers 200 can be configured to perform different processes. - The
processing platform 300 can also include one ormore buffer station 320 connected to thefirst side 311 of thecentral transfer station 310. Thebuffer stations 320 can perform the same or different functions. For example, the buffer stations may hold a cassette of wafers which are processed and returned to the original cassette, or one of the buffer stations may hold unprocessed wafers which are moved to the other buffer station after processing. In some embodiments, one or more of the buffer stations are configured to pre-treat, pre-heat or clean the wafers before and/or after processing. - The
processing platform 300 may also include one ormore slit valves 318 between thecentral transfer station 310 and any of theprocessing chambers 200. Theslit valves 318 can open and close to isolate the environment within theprocessing chamber 200 from the environment within thecentral transfer station 310. For example, if the processing chamber will generate plasma during processing, it may be helpful to close the slit valve for that processing chamber to prevent stray plasma from damaging the robot in the transfer station. - The
processing platform 300 can be connected to afactory interface 350 to allow wafers or cassettes of wafers to be loaded into theprocessing platform 300. Arobot 355 within thefactory interface 350 can be used to move the wafers or cassettes into and out of the buffer stations. The wafers or cassettes can be moved within theprocessing platform 300 by therobot 330 in thecentral transfer station 310. In some embodiments, thefactory interface 350 is a transfer station of another cluster tool (i.e., another multiple chamber processing platform). - A
controller 395 may be provided and coupled to various components of theprocessing platform 300 to control the operation thereof. Thecontroller 395 can be a single controller that controls theentire processing platform 300, or multiple controllers that control individual portions of theprocessing platform 300. For example, theprocessing platform 300 may include separate controllers for each of theindividual processing chambers 200,central transfer station 310,factory interface 350 androbots 330. In some embodiments, thecontroller 395 includes a central processing unit (CPU) 396, amemory 397, and supportcircuits 398. Thecontroller 395 may control theprocessing platform 300 directly, or via computers (or controllers) associated with particular process chamber and/or support system components. Thecontroller 395 may be one of any form of general-purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. Thememory 397 or computer readable medium of thecontroller 395 may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, optical storage media (e.g., compact disc or digital video disc), flash drive, or any other form of digital storage, local or remote. Thesupport circuits 398 are coupled to theCPU 396 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like. One or more processes may be stored in thememory 398 as software routine that may be executed or invoked to control the operation of theprocessing platform 300 or individual processing chambers in the manner described herein. The software routine may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by theCPU 396. -
FIGS. 9A through 9I illustrate various configurations of processingchambers 200 withdifferent process stations 210. The lettered circles represent thedifferent process stations 210 and process conditions. For example, inFIG. 9A , there are fourprocess stations 210 each with a different letter. This represents fourprocess stations 210 with each station having different conditions than the other stations. As indicated by the arrow, a process could occur by moving the heaters with wafers from stations A through D. After exposure to D, the cycle can continue or reverse. - In
FIG. 9B , four wafers can be processed at the same time with the wafers being moved on the heaters back and forth between the A and B positions. Two wafers could start in the A positions and two wafers in the B positions. Theindependent process stations 210 allow for the two of the stations to be turned off during the first cycle so that each wafer starts with an A exposure. - The embodiment illustrated in
FIG. 9B might also be useful in processing two wafers in the fourprocess stations 210. This might be particularly useful if one of the processes is at a very different pressure or the A and B process times are very different. - In
FIG. 9C , three wafers might be processed in asingle processing chamber 200 in and ABC process. One station can either be turned off or perform a different function (e.g., pre-heating). - In
FIG. 9D , two wafers can be processed in an AB-Treat process. For example, wafers might be placed on the B heaters only. A quarter turn clockwise will place one wafer in the A station and the second wafer in the T station. Turning back will move both wafers to the B stations and another quarter turn counter-clockwise will place the second wafer in the A station and the first wafer in the B station. - In
FIG. 9E , up to four wafers can be processed at the same time. For example, if the A station is configured to perform a CVD or ALD process, four wafers can be processed simultaneously. -
FIGS. 9F through 9I show similar types of configurations for aprocessing chamber 200 with threeprocess stations 210. Briefly, inFIG. 9F , a single wafer (or more than one) can be subjected to an ABC process. InFIG. 9G , two wafers can be subjected to an AB process by placing one in the A position and the other in one of the B positions. The wafers can then be moved back and forth so that the wafer starting in the B position moves to the A position in the first move and then back to the same B position. InFIG. 9H a wafer can be subjected to an AB-Treat process. InFIG. 9I , three wafers can be processed at the same time. -
FIGS. 10A and 10B illustrate another embodiment of the disclosure. InFIG. 10A , theheater 130 onsupport arm 120 has been rotated to a position beneathprocess station 210 so thatwafer 101 is adjacent thegas injector 212. An O-ring 129 on thesupport arm 120, or on an outer portion of theheater 130, is in a relaxed state. Thesupport arm 120 andheater 130 are moved toward theprocess station 210 so that thesupport surface 131 of theheater 130 is moved to contact or nearly contact thefront face 214 of theprocess station 210, as shown inFIG. 10B . In this position, O-ring 129 is compressed forming a seal around the outer edge of thesupport arm 120 or outer portion of theheater 130. This allows thewafer 101 to be moved as close theinjector 212 as possible to minimize the volume of thereaction region 219 so that thereaction region 219 can be rapidly purged. - Gases which might flow out of the
reaction region 219 are evacuated throughvacuum port 266 intovacuum plenum 265 and to an exhaust or foreline. A purge gas curtain outside of thevacuum port 266 can be generated bypurge gas plenum 260 and purgegas port 261. Additionally, a purge gas can be flowed through gap 237 between theheater 130 and thesupport arm 120 to further curtain off thereaction region 219 and prevent reactive gases from flowing into theinterior volume 209 of theprocessing chamber 200. - Reference throughout this specification to “one embodiment,” “certain embodiments,” “one or more embodiments” or “an embodiment” means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the disclosure. Thus, the appearances of the phrases such as “in one or more embodiments,” “in certain embodiments,” “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily referring to the same embodiment of the disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.
- Although the disclosure herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the method and apparatus of the present disclosure without departing from the spirit and scope of the disclosure. Thus, it is intended that the present disclosure include modifications and variations that are within the scope of the appended claims and their equivalents.
Claims (15)
1. A processing tool comprising:
a plurality of process stations, each process station providing a processing region separated from processing regions of adjacent process stations;
a substrate support having a support surface to support a wafer for processing, the substrate support configured to move the wafer between at least two of the plurality of process stations, the substrate support comprising:
a rotatable center base defining a rotational axis;
at least two support arms extending from the center base, each of the support arms having an inner end in contact with the center base and an outer end; and
a heater positioned on the outer end of each of the support arms, the heaters having a support surface; and
a controller connected to the substrate support and the plurality of process stations, the controller configured to activate the substrate support to move the wafer between stations, and to control a process occurring in each of the process stations.
2. The processing tool of claim 1 , wherein the plurality of process stations comprises one or more of a deposition station, an anneal station, a treatment station, or an etch station.
3. The processing tool of claim 2 , wherein the deposition station comprises one or more of an atomic layer deposition chamber, a chemical vapor deposition chamber, or a plasma enhanced chemical vapor deposition chamber.
4. The processing tool of claim 2 , wherein the anneal station comprises one or more of a laser anneal, thermal anneal or flash anneal chamber.
5. The processing tool of claim 2 , wherein the treatment station comprises a plasma processing chamber.
6. The processing tool of claim 2 , wherein the etch station comprises one or more of a chemical etch, a reactive ion etch or an isotropic etch chamber.
7. The processing tool of claim 1 , wherein the controller is configured to: move the wafer sequentially from a deposition station to an anneal station to a treatment station; deposit a layer on the wafer in the deposition station; anneal the layer in the anneal station; and plasma treat the annealed layer in the treatment station.
8. The processing tool of claim 7 , wherein the controller is further configured to: move the wafer sequentially from the deposition station to the anneal station to the treatment station to an etch station; and perform an etch process on the wafer in the etch station.
9. The processing tool of claim 8 , wherein the controller is configured to: deposit the layer in the deposition station to a thickness less than or equal to about 15 Å; move the wafer to the anneal station to anneal the layer; move the wafer to the treatment station to expose the layer to plasma; and move the wafer to the etch station to selectively etch the layer from a portion of the wafer.
10. The processing tools of claim 9 , wherein the controller is further configured to: repeat the deposition, anneal, treatment and etch processes to form a layer of a predetermined thickness.
11. The processing tool of claim 10 , wherein the predetermined thickness is greater than or equal to about 100 Å.
12. The processing tool of claim 1 , wherein the support arms extend orthogonal to the rotational axis.
13. The processing tool of claim 1 , further comprising at least one motor connected to the center base.
14. The processing tool of claim 13 , wherein the at least one motor is configured to rotate the substrate support around the rotational axis.
15. The processing tool of claim 13 , wherein the at least one motor is configured to move the center base in a direction along the rotational axis.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/474,193 US20210404061A1 (en) | 2018-05-16 | 2021-09-14 | Atomic layer self aligned substrate processing and integrated toolset |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862672560P | 2018-05-16 | 2018-05-16 | |
US16/412,696 US11131022B2 (en) | 2018-05-16 | 2019-05-15 | Atomic layer self aligned substrate processing and integrated toolset |
US17/474,193 US20210404061A1 (en) | 2018-05-16 | 2021-09-14 | Atomic layer self aligned substrate processing and integrated toolset |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/412,696 Continuation US11131022B2 (en) | 2018-05-16 | 2019-05-15 | Atomic layer self aligned substrate processing and integrated toolset |
Publications (1)
Publication Number | Publication Date |
---|---|
US20210404061A1 true US20210404061A1 (en) | 2021-12-30 |
Family
ID=68534319
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/412,696 Active US11131022B2 (en) | 2018-05-16 | 2019-05-15 | Atomic layer self aligned substrate processing and integrated toolset |
US17/474,193 Pending US20210404061A1 (en) | 2018-05-16 | 2021-09-14 | Atomic layer self aligned substrate processing and integrated toolset |
US17/474,196 Pending US20210404062A1 (en) | 2018-05-16 | 2021-09-14 | Atomic Layer Self Aligned Substrate Processing and Integrated Toolset |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/412,696 Active US11131022B2 (en) | 2018-05-16 | 2019-05-15 | Atomic layer self aligned substrate processing and integrated toolset |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/474,196 Pending US20210404062A1 (en) | 2018-05-16 | 2021-09-14 | Atomic Layer Self Aligned Substrate Processing and Integrated Toolset |
Country Status (6)
Country | Link |
---|---|
US (3) | US11131022B2 (en) |
JP (2) | JP7443250B2 (en) |
KR (1) | KR20200142601A (en) |
CN (1) | CN112204169A (en) |
TW (2) | TWI777828B (en) |
WO (1) | WO2019222320A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170048787A (en) * | 2015-10-27 | 2017-05-10 | 세메스 주식회사 | Apparatus and Method for treating a substrate |
US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
KR102431292B1 (en) | 2020-01-15 | 2022-08-09 | 램 리써치 코포레이션 | Bottom layer for photoresist adhesion and dose reduction |
CN116626993A (en) * | 2020-07-07 | 2023-08-22 | 朗姆研究公司 | Integrated drying process for patterning radiation photoresist |
US11818810B2 (en) * | 2021-03-26 | 2023-11-14 | Applied Materials, Inc. | Heater assembly with purge gap control and temperature uniformity for batch processing chambers |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5683561A (en) * | 1991-04-04 | 1997-11-04 | Conner Peripherals, Inc. | Apparatus and method for high throughput sputtering |
US5795448A (en) * | 1995-12-08 | 1998-08-18 | Sony Corporation | Magnetic device for rotating a substrate |
US6403479B1 (en) * | 2000-03-17 | 2002-06-11 | Hitachi, Ltd. | Process for producing semiconductor and apparatus for production |
US6592675B2 (en) * | 2001-08-09 | 2003-07-15 | Moore Epitaxial, Inc. | Rotating susceptor |
US6967154B2 (en) * | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
US7153542B2 (en) * | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
US20100055315A1 (en) * | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus, substrate process apparatus, film deposition method, and computer readable storage medium |
US9514933B2 (en) * | 2014-01-05 | 2016-12-06 | Applied Materials, Inc. | Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition |
US20170121847A1 (en) * | 2013-06-05 | 2017-05-04 | Veeco Instruments Inc. | Wafer carrier having thermal uniformity-enhancing features |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
JP2006028577A (en) | 2004-07-15 | 2006-02-02 | Canon Anelva Corp | Cvd system |
KR20090035578A (en) * | 2006-07-03 | 2009-04-09 | 어플라이드 머티어리얼스, 인코포레이티드 | Cluster tool for advanced front-end processing |
JP5315898B2 (en) * | 2008-09-30 | 2013-10-16 | 東京エレクトロン株式会社 | Deposition equipment |
US9330939B2 (en) * | 2012-03-28 | 2016-05-03 | Applied Materials, Inc. | Method of enabling seamless cobalt gap-fill |
JP6042160B2 (en) | 2012-10-03 | 2016-12-14 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
US20150079799A1 (en) * | 2013-09-17 | 2015-03-19 | Applied Materials, Inc. | Method for stabilizing an interface post etch to minimize queue time issues before next processing step |
KR102403706B1 (en) * | 2013-09-27 | 2022-05-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Method of enabling seamless cobalt gap-fill |
WO2015106261A1 (en) * | 2014-01-13 | 2015-07-16 | Applied Materials, Inc. | Self-aligned double patterning with spatial atomic layer deposition |
US9384998B2 (en) * | 2014-12-04 | 2016-07-05 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
KR102522329B1 (en) | 2015-09-24 | 2023-04-14 | 도쿄엘렉트론가부시키가이샤 | Bottom-Up Deposition Method of Film in Recessed Features |
US20170088952A1 (en) | 2015-09-28 | 2017-03-30 | Ultratech, Inc. | High-throughput multichamber atomic layer deposition systems and methods |
US10358715B2 (en) * | 2016-06-03 | 2019-07-23 | Applied Materials, Inc. | Integrated cluster tool for selective area deposition |
JP6403722B2 (en) | 2016-07-21 | 2018-10-10 | 株式会社Kokusai Electric | Substrate processing apparatus, semiconductor device manufacturing method, and program |
US20180025931A1 (en) | 2016-07-22 | 2018-01-25 | Applied Materials, Inc. | Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing |
-
2019
- 2019-05-15 CN CN201980034956.4A patent/CN112204169A/en active Pending
- 2019-05-15 US US16/412,696 patent/US11131022B2/en active Active
- 2019-05-15 WO PCT/US2019/032373 patent/WO2019222320A1/en active Application Filing
- 2019-05-15 JP JP2020564207A patent/JP7443250B2/en active Active
- 2019-05-15 KR KR1020207036019A patent/KR20200142601A/en not_active Application Discontinuation
- 2019-05-16 TW TW110139258A patent/TWI777828B/en active
- 2019-05-16 TW TW108116905A patent/TWI746980B/en active
-
2021
- 2021-09-14 US US17/474,193 patent/US20210404061A1/en active Pending
- 2021-09-14 US US17/474,196 patent/US20210404062A1/en active Pending
-
2022
- 2022-12-27 JP JP2022210978A patent/JP2023058481A/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5683561A (en) * | 1991-04-04 | 1997-11-04 | Conner Peripherals, Inc. | Apparatus and method for high throughput sputtering |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5795448A (en) * | 1995-12-08 | 1998-08-18 | Sony Corporation | Magnetic device for rotating a substrate |
US6403479B1 (en) * | 2000-03-17 | 2002-06-11 | Hitachi, Ltd. | Process for producing semiconductor and apparatus for production |
US6592675B2 (en) * | 2001-08-09 | 2003-07-15 | Moore Epitaxial, Inc. | Rotating susceptor |
US7153542B2 (en) * | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
US6967154B2 (en) * | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
US20100055315A1 (en) * | 2008-09-04 | 2010-03-04 | Tokyo Electron Limited | Film deposition apparatus, substrate process apparatus, film deposition method, and computer readable storage medium |
US20170121847A1 (en) * | 2013-06-05 | 2017-05-04 | Veeco Instruments Inc. | Wafer carrier having thermal uniformity-enhancing features |
US9514933B2 (en) * | 2014-01-05 | 2016-12-06 | Applied Materials, Inc. | Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition |
Also Published As
Publication number | Publication date |
---|---|
US11131022B2 (en) | 2021-09-28 |
US20210404062A1 (en) | 2021-12-30 |
JP2021523982A (en) | 2021-09-09 |
TWI777828B (en) | 2022-09-11 |
TWI746980B (en) | 2021-11-21 |
TW202208676A (en) | 2022-03-01 |
US20190352776A1 (en) | 2019-11-21 |
JP7443250B2 (en) | 2024-03-05 |
KR20200142601A (en) | 2020-12-22 |
JP2023058481A (en) | 2023-04-25 |
CN112204169A (en) | 2021-01-08 |
TW202004868A (en) | 2020-01-16 |
WO2019222320A1 (en) | 2019-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11131022B2 (en) | Atomic layer self aligned substrate processing and integrated toolset | |
US20240096688A1 (en) | Single wafer processing environments with spatial separation | |
US20200090978A1 (en) | Methods Of Operating A Spatial Deposition Tool | |
US20210087681A1 (en) | Dithering Or Dynamic Offsets For Improved Uniformity | |
US20200066572A1 (en) | Methods Of Operating A Spatial Deposition Tool | |
JP2023113690A (en) | Methods of operating spatial deposition tool | |
JP7249407B2 (en) | Complementary pattern station design | |
TWI838222B (en) | Single wafer processing environments with spatial separation | |
JP2024081654A (en) | Single wafer processing environment with spatial isolation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |