US20210313218A1 - Semiconductor structure and manufacturing method thereof - Google Patents
Semiconductor structure and manufacturing method thereof Download PDFInfo
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- US20210313218A1 US20210313218A1 US17/353,618 US202117353618A US2021313218A1 US 20210313218 A1 US20210313218 A1 US 20210313218A1 US 202117353618 A US202117353618 A US 202117353618A US 2021313218 A1 US2021313218 A1 US 2021313218A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 129
- 238000002955 isolation Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 23
- 125000006850 spacer group Chemical group 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Definitions
- Power device is always the major device of power driver products.
- large oxide diffusion area may be necessary for bearing high applied voltage or medium applied voltage.
- Large oxide diffusion area always suffers more stresses during the manufacturing processes of the power device. Consequently, crystal defects which may induce current leakage of the power device may increase in the large oxide diffusion area of the power device.
- FIG. 1 is a top view of a semiconductor structure in accordance with some embodiments of the present disclosure.
- FIG. 2A is a top view of a semiconductor structure in accordance with some embodiments of the present disclosure.
- FIGS. 2B and 2C are cross-sections of the semiconductor structure in accordance with some embodiments of the present disclosure.
- FIG. 2D is a top view of a semiconductor structure in accordance with some embodiments of the present disclosure.
- FIG. 2E is a cross-section of the semiconductor structure in accordance with some embodiments of the present disclosure.
- FIGS. 3A to 3B are top views of a semiconductor structure in accordance with some embodiments of the present disclosure.
- FIGS. 4A to 4C are top views of a semiconductor structure in accordance with some embodiments of the present disclosure.
- FIGS. 5A and 5B are top views of a semiconductor structure in accordance with some embodiments of the present disclosure.
- FIGS. 5C and 5D are cross-sections of the semiconductor structure in accordance with some embodiments of the present disclosure.
- FIG. 5E is a top view of the semiconductor structure in accordance with some embodiments of the present disclosure.
- FIGS. 6A to 6C are top views of a semiconductor structure in accordance with some embodiments of the present disclosure.
- FIG. 7 is a flowchart illustrating a method for manufacturing a semiconductor structure in accordance with some embodiments of the present disclosure.
- FIGS. 8A-8J are cross-sections and top views of a semiconductor structure at various stages of manufacture in accordance with some embodiments of the present disclosure.
- FIGS. 9A-9M are cross-sections and top views of a semiconductor structure at various stages of manufacture in accordance with some embodiments of the present disclosure.
- FIGS. 10A-10M are cross-sections and top views of a semiconductor structure at various stages of manufacture in accordance with some embodiments of the present disclosure.
- first and second features are formed in direct contact
- additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
- present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper,” “lower,” “left,” “right” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures.
- the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
- the apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. It should be understood that when an element is referred to as being “connected to” or “coupled to” another element, it may be directly connected to or coupled to the other element, or intervening elements may be present.
- FIG. 1 is a top view of a semiconductor structure 1 in accordance with some embodiments of the present disclosure.
- the semiconductor structure 1 includes a transistor 10 .
- the transistor 10 includes a semiconductive substrate 101 , a gate structure 102 , a first pair of highly doped regions 103 S and 103 D and a dielectric element 105 .
- the semiconductive substrate 101 has a top surface 101 A.
- the gate structure 102 may be formed over the top surface 101 A.
- the doped regions 1035 and 1031 may be separated by the gate structure 102 .
- the dielectric element 105 may be embedded in the semiconductive substrate 101 .
- the dielectric element 105 may be misaligned with the doped regions 103 S and 103 D. In detail, the dielectric element 105 may be laterally and vertically misaligned with the doped regions 103 S and 103 D.
- FIG. 2A is a top view of a semiconductor structure 2 in accordance with some embodiments of the present disclosure.
- the semiconductor structure 2 includes a transistor 20 .
- the transistor 20 includes a semiconductive substrate 201 , a gate structure 202 , a first pair of highly doped regions 203 S and 203 D, a second pair of highly doped regions 204 S and 204 D and a dielectric element 205 .
- the semiconductive substrate 201 has a top surface 201 A.
- the gate structure 202 may be formed over the top surface 201 A.
- the doped regions 203 S and 203 D may be separated by the gate structure 202 .
- the doped regions 2045 and 204 D may be separated by the gate structure 202 .
- the dielectric element 205 may be embedded in the semiconductive substrate 201 .
- the dielectric element 205 may be misaligned with the doped regions 203 S and 203 D and misaligned with the doped regions 2045 and 204 D.
- the dielectric element 205 may be laterally and vertically misaligned with the doped regions 203 S and 203 D.
- the dielectric element 205 may be laterally and vertically misaligned with the doped regions 204 S and 204 D.
- the dielectric element 205 may be formed under the gate structure 202 .
- FIGS. 2B and 2C are cross-sections of the semiconductor structure 2 in accordance with some embodiments of the present disclosure.
- the gate structure 202 includes a gate electrode 202 a , spacers 202 b and a dielectric layer 202 c .
- the dielectric layer 202 c may be formed between the semiconductive substrate 201 and the gate electrode 202 a .
- the spacers 202 b may be formed over the semiconductive substrate 201 .
- the spacers 202 b cover the dielectric layer 202 c and part of the gate electrode 202 a .
- the spacers 202 b cover two sides of the stack of the dielectric layer 202 c and the gate electrode 202 a , and a surface of the gate electrode 202 a may be exposed between the spacers 202 b.
- FIG. 2D is a top view of the semiconductor structure 2 in accordance with some embodiments of the present disclosure.
- FIG. 2E is a cross-section of the semiconductor structure 2 in accordance with some embodiments of the present disclosure.
- the transistor 20 includes a plurality of dielectric elements 205 ′.
- Each of the plurality of dielectric elements 205 ′ may be laterally and vertically misaligned with the doped regions 203 S and 203 D. Further, each of the plurality of dielectric elements 205 ′ may be laterally and vertically misaligned with the doped regions 204 S and 204 D.
- the dielectric elements 205 ′ may be formed within a center area C related to the top surface 201 A of the semi conductive substrate 201 .
- FIG. 3A is a top view of a semiconductor structure 3 in accordance with some embodiments of the present disclosure.
- the semiconductor structure 3 includes a transistor 30 .
- the transistor 30 includes a semi conductive substrate 301 , a gate structure 302 , a first pair of highly doped regions 303 S and 303 D, a second pair of highly doped regions 304 S and 304 D and a dielectric element 305 .
- the semiconductive substrate 301 has a top surface 301 A.
- the gate structure 302 is disposed over the top surface 301 A.
- the gate structure 302 may be in a shape of crisscross.
- the doped regions 303 S and 303 D are separated by the gate structure 302 .
- the doped regions 304 S and 304 D are separated by the gate structure 302 .
- the doped regions 303 S and 304 S may be source regions of the transistor 30 .
- the doped regions 303 D and 304 D may be drain regions of the transistor 30 .
- the gate structure 302 with the shape of crisscross defines the semiconductive substrate 301 of the transistor 301 as four parts. Further, relative to the four parts defined in the semiconductive substrate 301 of the transistor 30 , the doped regions 303 S and 304 S may be formed diagonally in the semiconductive substrate 301 of the transistor 301 . Similarly, the doped regions 303 D and 304 D may be formed diagonally in the semiconductive substrate 301 of the transistor 30 . In some embodiments, the source region 303 S may be paired with the drain region 304 D, and the source region 304 S may be paired with the drain region 3031 ).
- the dielectric element 305 is embedded in the semiconductive substrate 301 .
- the dielectric element 305 is misaligned with the doped regions 3035 and 303 D and misaligned with the doped regions 304 S and 304 D.
- the dielectric element 305 is laterally and vertically misaligned with the doped regions 303 S and 303 D.
- the dielectric element 305 is laterally and vertically misaligned with the doped regions 304 S and 304 D.
- the dielectric element 305 is formed under the gate structure 303 with the shape of crisscross.
- FIG. 3B is a top view of the semiconductor structure 3 in accordance with some embodiments of the present disclosure.
- the transistor 30 includes a plurality of dielectric elements 305 ′.
- Each of the plurality of dielectric elements 305 ′ may be laterally and vertically misaligned with the doped regions 303 S and 303 D. Further, each of the plurality of dielectric elements 305 ′ may be laterally and vertically misaligned with the doped regions 304 S and 304 D.
- FIG. 4A is a top view of a semiconductor structure 4 in accordance with some embodiments of the present disclosure.
- the semiconductor structure 4 includes a transistor 40 .
- the transistor 40 includes a semiconductive substrate 401 , a gate 402 , a source region 403 S, a drain region 4031 ) and an isolation component 405 .
- the source region 403 S and the drain region 403 D may be formed in the semiconductor substrate 401 .
- the gate 402 may be formed over the semiconductor substrate 401 and between the source region 403 S and the drain region 403 D. There may be a channel 403 C between the source region 403 S and the drain region 403 D.
- the isolation component 405 may be embedded in the semiconductive substrate 401 . In detail, the isolation component 405 may be spaced apart from the channel 403 C between the source region 403 S and the drain region 403 D. In other words, the formation of the isolation component 405 may not block the channel 403 C between the source region 403 S and the drain region 403 D.
- FIG. 4B is a top view of the semiconductor structure 4 in accordance with some embodiments of the present disclosure.
- the transistor 40 includes two isolation components 405 ′.
- the isolation components 405 ′ may be embedded in the semiconductive substrate 401 .
- both of the isolation components 405 ′ may be spaced apart from the channel 403 C between the source region 403 S and the drain region 403 D.
- the formations of the isolation components 405 ′ may not block the channel 403 C between the source region 403 S and the drain region 403 D.
- the channel 403 C may be a shortest channel between the source region 403 S and the drain region 403 D.
- FIG. 4C is a top view of the semiconductor structure 4 in accordance with some embodiments of the present disclosure.
- the source region 403 S has a source contact 403 SC.
- the drain region 403 D has a drain contact 403 DC.
- the gate 402 has a pair of gate contacts 402 G 1 and 402 G 2 .
- the source contact 403 SC and the drain contact 403 DC may protrude from the surface of the semiconductive substrate 401 .
- the gate contacts 402 G 1 and 402 G 2 may protrude from a surface of the gate 402 , and be used for being applied voltage to active the channel 4030 .
- FIG. 5A is a top view of a semiconductor structure 5 in accordance with sonic embodiments of the present disclosure.
- the semiconductor structure 5 includes a transistor 50 .
- the transistor 50 includes a semiconductive substrate 501 , a gate 502 , a source region 503 S, a drain region 503 D, a source region 504 S, a drain region 504 D and an isolation component 505 .
- the source regions 503 S, 504 S and the drain regions 503 D, 504 D may be formed in the semiconductor substrate 501 .
- the gate 502 may be formed over the semiconductor substrate 501 . Further, the gate 502 may be formed between the source region 503 S and the drain region 503 D, and between the source region 504 S and the drain region 504 D. There may be a channel 503 C between the source region 503 S and the drain region 503 D, and a channel 504 C between the source region 504 S and the drain region 504 D.
- the isolation component 405 may be embedded in the semiconductive substrate 501 .
- the isolation component 505 may be spaced apart from the channel 503 C between the source region 503 S and the drain region 503 D.
- the isolation component 505 may be spaced apart from the channel 504 C between the source region 504 S and the drain region 504 D.
- the formation of the isolation component 505 may not block the channel 503 C between the source region 503 S and the drain region 503 D and may not block the channel 504 C between the source region 504 S and the drain region 504 D.
- FIG. 5B is a top view of the semiconductor structure 5 in accordance with some embodiments of the present disclosure.
- the source region 503 S has a source contact 5035 C.
- the drain region 503 D has a drain contact 503 DC.
- the source region 504 S has a 504 SC.
- the drain region 504 D has a drain contact 504 DC.
- the gate 502 has a pair of gate contacts 502 G 1 and 502 G 2 .
- FIGS. 5C and 5D are cross-sections of the semiconductor structure 5 in accordance with some embodiments of the present disclosure.
- the source contacts 503 SC, 504 SC and the drain contacts 503 DC, 504 DC may protrude from the surface of the semiconductive substrate 501 .
- the gate contacts 502 G 1 and 502 G 2 may protrude from a surface of the gate 502 , and be used for being applied voltage to active the channels 503 C and 504 C.
- the gate structure 502 includes a gate electrode 502 a , spacers 502 b and a dielectric layer 502 c .
- the dielectric layer 502 c may be formed between the semiconductive substrate 501 and the gate electrode 502 a .
- the spacers 502 b may be formed over the semiconductive substrate 501 .
- the spacers 502 b cover the dielectric layer 502 c and part of the gate electrode 502 a .
- the spacers 502 b cover two sides of the stack of the dielectric layer 502 c and the gate electrode 502 a , and a surface of the gate electrode 502 a may be exposed between the spacers 502 b.
- FIG. 5E is a top view of the semiconductor structure 5 in accordance with some embodiments of the present disclosure.
- the transistor 50 includes a plurality of isolation components 505 ′.
- Each of the plurality of isolation components 505 ′ may be spaced apart from the channel 503 C between the source region 503 S and the drain region 503 D.
- Each of the plurality of the isolation components 505 ′ may be spaced apart from the channel 504 C between the source region 504 S and the drain region 504 D.
- the formations of the isolation components 505 ′ may not block the channel 503 C between the source region 503 S and the drain region 5031 ) and may not block the channel 504 C between the source region 504 S and the drain region 504 S.
- FIG. 6A is a top view of a semiconductor structure 6 in accordance with some embodiments of the present disclosure.
- the semiconductor structure 6 includes a transistor 60 .
- the transistor 60 includes a semiconductive substrate 601 , a gate structure 602 ., a source region 603 S, a drain region 603 D, a source region 604 S, a drain region 604 D and an isolation component 605 .
- the source regions 603 S, 604 S and the drain regions 603 D, 604 D may be formed in the semiconductor substrate 601
- the gate 602 may be formed in a shape of crisscross over the semiconductor substrate 601 .
- the gate structure 602 may be formed between the source region 603 S and the drain region 603 D, and between the source region 604 S and the drain region 604 D. In other words, the source region 603 S and the drain region 603 D are separated by the gate 602 .
- the source region 604 S and the drain region 604 D are separated by the gate 602 .
- the gate structure 602 may be formed between the source region 603 S and the drain region 604 D, and between the source region 604 S and the drain region 603 D.
- the source region 604 S and the drain region 603 D are separated by the gate 602 .
- the source region 603 S and the drain region 601 D are separated by the gate 602 . Accordingly, there may be a channel CH 1 between the source region 603 S and the drain region 603 D, a channel CH 2 between the source region 604 S and the drain region 604 D, a channel CH 3 between the source region 603 S and the drain region 604 D, and a channel CH 4 between the source region 604 S and the drain region 603 D.
- the isolation component 605 may be embedded in the semiconductive substrate 601 .
- the isolation component 605 may be spaced apart from the channel CHI between the source region 603 S and the drain region 603 D.
- the isolation component 605 may be spaced apart from the channel CH 2 between the source region 604 S and the drain region 604 D.
- the formation of the isolation component 605 may not block the channel CH 1 between the source region 603 S and the drain region 603 D and may not block the channel CH 2 between the source region 604 S and the drain region 604 D.
- the isolation component 605 may be spaced apart from the channel CH 3 between the source region 603 S and the drain region 604 D.
- the isolation component 605 may be spaced apart from the channel CH 4 between the source region 604 S and the drain region 603 D.
- the formation of the isolation component 605 may not block the channel CH 3 between the source region 603 S and the drain region 604 D and may not block the channel CH 4 between the source region 604 S and the drain region 603 D.
- FIG. 6B is a top view of the semiconductor structure 6 in accordance with some embodiments of the present disclosure.
- the source region 603 S has a source contact 603 SC.
- the drain region 603 D has a drain contact 603 DC.
- the source region 604 S has a 604 SC.
- the drain region 604 D has a drain contact 604 DC.
- the source contacts 603 SC, 604 SC and the drain contacts 603 DC, 604 DC may protrude from the surface of the semiconductive substrate 601 .
- the gate 602 has a first pair of gate contacts 602 G 1 and 602 G 2 , and a second pair of gate contacts 602 G 3 and 602 G 4 .
- the first pair of gate contacts 602 G 1 and 602 G 2 may protrude from a surface of the gate 602 , and be used for being applied voltage to active the channel s CH 1 and CH 2 .
- the second pair of gate contacts 602 G 3 and 602 G 4 may protrude from the surface the surface of the gate 602 , and be used for being applied voltage to active the channels CH 3 and CH 4 .
- FIG. 6C is a top view of the semiconductor structure 6 in accordance with some embodiments of the present disclosure.
- the transistor 60 includes a plurality of isolation components 605 ′.
- Each of the plurality of isolation components 605 ′ may be spaced apart from the channel CH 1 between the source region 603 S and the drain region 603 D.
- Each of the plurality of the isolation components 605 ′ may be spaced apart from the channel CH 2 between the source region 604 S and the drain region 604 D.
- Each of the plurality of the isolation components 605 ′ may be spaced apart from the channel CH 3 between the source region 603 S and the drain region 604 D.
- Each of the plurality of the isolation components 605 ′ may be spaced apart from the channel CH 4 between the source region 604 S and the drain region 603 D. In other words, the formations of the isolation components 605 ′ may not block the channels CH 1 to CH 4 between the source regions 603 S, 604 S and the drain regions 603 D, 604 D.
- Some embodiments of the present disclosure provide a method for manufacturing a semiconductor structure as shown in FIG. 7 .
- the method includes: operation 701 , in which a semiconductive substrate of a transistor is provided; operation 702 , in which at least one dielectric element is formed in the semiconductive substrate of the transistor; operation 703 , in which a gate structure is formed over the semiconductive substrate; and operation 704 , in which a source region and a drain region are formed in the semiconductive substrate of the transistor, wherein the gate structure is between the source region and the drain region, and a channel between the source region and the drain region is formed away from the at least one dielectric element.
- operation 702 in which the at least one dielectric element is formed, includes two sub-operations: (i) forming at least one trench in the semiconductive substrate of the transistor; and (ii) filling the at least one trench with oxide material for forming the at least one dielectric element.
- FIGS. 8A and 8B are provided in accordance with some embodiments of the present disclosure.
- a semiconductive substrate 800 is provided.
- One unit of transistor 810 may be defined in the semiconductive substrate 800 .
- FIG. 8B is a cross-section of the semiconductive substrate 800 in FIG. 8A .
- FIGS. 8C to 8F illustrate operation 702 of the method in accordance with some embodiments of the present disclosure.
- the operations of STI are also performed for forming at least one dielectric element 820 in the semiconductive substrate 800 of the transistor 810 .
- the semiconductive substrate 800 is etched for defining the transistor 810 .
- the semiconductive substrate 800 within the area of the transistor 810 is etched.
- at least one trench 830 is formed in the semiconductive substrate 800 of the transistor 810 while the semiconductive substrate 800 is etched for defining the transistor 810 .
- FIG. 8D is a cross-section of the semiconductive substrate 800 in FIG. 8C .
- FIG. 8E when the filling operation of STI is performed with oxide material, the at least one trench 830 in the semiconductive substrate 800 of the transistor 810 is filled with the oxide material at the same time. Accordingly, the at least one dielectric element 820 is formed in the semiconductive substrate 800 of the transistor 810 .
- FIG. 8F is a cross-section of the semiconductive substrate 800 in FIG.
- FIGS. 8G to 8H illustrate operation 703 of the method in accordance with some embodiments of the present disclosure.
- a gate structure 850 is formed over the semiconductive substrate 800 .
- FIG. 8H is a cross-section of the semiconductive substrate 800 in FIG. 8G .
- FIGS. 8I to 8J illustrate operation 704 of the method in accordance with some embodiments of the present disclosure.
- a source region 840 S is formed in the semiconductive substrate 800
- a drain region 840 D is formed in the semiconductive substrate 800 .
- the gate structure 850 is between the source region 840 S and the drain region 840 D.
- a channel between the source region 840 S and the drain region 840 D is formed away from the at least one dielectric element 820 .
- FIG. 8J is a cross-section of the semiconductive substrate 800 in FIG. 8I .
- FIGS. 9A and 9B are provided in accordance with some embodiments of the present disclosure.
- a semiconductive substrate 900 is provided.
- One unit of transistor 910 may be defined in the semiconductive substrate 900 .
- FIG. 9B is a cross-section of the semiconductive substrate 900 in 9 A.
- FIGS. 9C to 9F illustrate operation 702 of the method in accordance with some embodiments of the present disclosure.
- the operations of STI are also performed for forming plurality of isolation components 920 in the semiconductive substrate 900 of the transistor 910 .
- the semiconductive substrate 900 is etched for defining the transistor 910 .
- the semiconductive substrate 900 within the area of the transistor 910 is etched.
- a plurality of trenches 930 are formed in the semiconductive substrate 900 of the transistor 910 while the semiconductive substrate 900 is etched for defining the transistor 910 .
- FIG. 9D is a cross-section of the semiconductive substrate 900 in FIG. 9C .
- FIG. 9E is a cross-section of the semiconductive substrate 900 in FIG. 9E .
- FIGS. 9G to 9H illustrate operation 703 of the method in accordance with some embodiments of the present disclosure.
- a gate structure 95 ( ) is formed over the semiconductive substrate 900 .
- FIG. 9H is a cross-section of the semiconductive substrate 900 in FIG. 9G .
- FIGS. 9I to 9J illustrate operation 704 of the method in accordance with some embodiments of the present disclosure.
- source regions 940 S and 942 S are formed in the semiconductive substrate 900
- drain regions 940 D and 942 D are formed in the semiconductive substrate 900 .
- the gate structure 950 is between the source region 940 S and the drain region 940 D, and is between the source region 9405 and the drain region 940 D.
- a channel between the source region 940 S and the drain region 940 D is formed away from the isolation components 920 .
- a channel between the source region 942 S and the drain region 942 D is formed away from the isolation components 920 .
- FIG. 9J is a cross-section of the semiconductive substrate 900 in FIG. 9I .
- FIGS. 9K to 9M illustrate the method in accordance with some embodiments of the present disclosure.
- a source contact 940 SC is formed on the source region 940 S.
- a source contact 9425 C is formed on the source region 942 S.
- a drain contact 940 DC is formed on the drain region 940 D.
- a drain contact 942 DC is formed on the drain region 942 D.
- gate contacts 950 G 1 and 950 G 2 are formed on a surface of the gate structure 950 .
- FIGS. 9L and 9M are cross-sections of the semiconductive substrate 900 in FIG. 9K .
- FIGS. 10A and 10B are provided in accordance with some embodiments of the present disclosure.
- a semiconductive substrate 100 is provided.
- One unit of transistor 110 may be defined in the semiconductive substrate 100 .
- FIG. 9B is a cross-section of the semiconductive substrate 100 in FIG. 10A .
- FIG. 10E is a cross-section of the semiconductive substrate 100 in FIG. 10E .
- FIGS. 10G to 10H illustrate operation 703 of the method in accordance with some embodiments of the present disclosure.
- a gate structure 150 is formed over the semiconductive substrate 100 .
- the gate structure 150 is in a shape of crisscross.
- FIG. 10H is a cross-section of the semiconductive substrate 100 in FIG. 10G
- FIGS. 10I to 10J illustrate operation 704 of the method in accordance with some embodiments of the present disclosure.
- source regions 140 S and 142 S are formed in the semiconductive substrate 100
- drain regions 140 D and 142 D are formed in the semiconductive substrate 100 .
- the gate structure 150 is between the source region 140 S and the drain region 140 D.
- a channel between the source region 140 S and the drain region 140 D is formed away from the isolation components 120 .
- the gate structure 150 is between the source region 142 S and the drain region 142 D.
- a channel between the source region 142 S and the drain region 142 D is formed away from the isolation components 120 .
- the gate structure 150 is between the source region 140 S and the drain region 142 D.
- a channel between the source region 140 S and the drain region 142 D is formed away from the isolation components 120 .
- the gate structure 150 is between the source region 142 S and the drain region 140 D.
- a channel between the source region 142 S and the drain region 1401 D is formed away from the isolation components 120 .
- FIG. 10J is a cross-section of the semiconductive substrate 100 in FIG. 10I .
- FIGS. 10K to 10M illustrate the method in accordance with some embodiments of the present disclosure.
- a source contact 140 SC is formed on the source region 140 S.
- a source contact 142 SC is formed on the source region 142 S.
- a drain contact 140 DC is formed on the drain region 140 D.
- a drain contact 142 DC is formed on the drain region 142 D.
- gate contacts 150 G 1 to 150 G 4 are formed on a surface of the gate structure 150 .
- the gate contacts 150 G 1 to 150 G 4 are respectively formed at four ends of the gate 150 with the shape of crisscross.
- FIGS. 10L and 10M are cross-sections of the semiconductive substrate 100 in FIG. 10K .
- a width of the mentioned gate or gate structure of the semiconductor structure is greater than 20 micrometers.
- the semiconductor structure includes a transistor.
- the transistor includes a semiconductive substrate, a gate structure, a first pair of highly doped regions and a dielectric element.
- the semiconductive substrate has a top surface.
- the gate structure is over the top surface.
- the first pair of highly doped regions is separated by the gate structure.
- the dielectric element is embedded in the semiconductive substrate. The dielectric element is laterally and vertically misaligned with the first pair of highly doped regions.
- the semiconductor structure includes a transistor.
- the transistor includes a semiconductive substrate, a first source region, a first drain region, a gate and at least one isolation component.
- the first source region is in the semiconductive substrate.
- the first drain region is in the semiconductive substrate.
- the gate is over the semiconductive substrate and between the first source region and the first drain region.
- the at least one isolation component is embedded in the semiconductive substrate. The at least one isolation component is spaced apart from a first channel formed between the first source region and the first drain region.
- Some embodiments of the present disclosure provide a method for manufacturing a semiconductor structure.
- the method includes: providing a semiconductive substrate of a transistor; forming at least one dielectric element in the semiconductive substrate of the transistor; forming a source region and a drain region in the semiconductive substrate of the transistor, wherein a channel between the source region and the drain region is formed away from the at least one dielectric element.
Abstract
Description
- This patent application is a divisional of U.S. patent application Ser. No. 16/371,900 tiled on Apr. 1, 2019, entitled of “SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF”, which claims the benefit of U.S. Provisional Patent Application Ser. No. 62/738,499 tiled Sep. 28, 2018, the entire disclosure of which is hereby incorporated by reference.
- Power device is always the major device of power driver products. As for a high voltage or medium voltage power device, large oxide diffusion area may be necessary for bearing high applied voltage or medium applied voltage. Large oxide diffusion area always suffers more stresses during the manufacturing processes of the power device. Consequently, crystal defects which may induce current leakage of the power device may increase in the large oxide diffusion area of the power device.
- Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
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FIG. 1 is a top view of a semiconductor structure in accordance with some embodiments of the present disclosure. -
FIG. 2A is a top view of a semiconductor structure in accordance with some embodiments of the present disclosure. -
FIGS. 2B and 2C are cross-sections of the semiconductor structure in accordance with some embodiments of the present disclosure. -
FIG. 2D is a top view of a semiconductor structure in accordance with some embodiments of the present disclosure. -
FIG. 2E is a cross-section of the semiconductor structure in accordance with some embodiments of the present disclosure. -
FIGS. 3A to 3B are top views of a semiconductor structure in accordance with some embodiments of the present disclosure. -
FIGS. 4A to 4C are top views of a semiconductor structure in accordance with some embodiments of the present disclosure. -
FIGS. 5A and 5B are top views of a semiconductor structure in accordance with some embodiments of the present disclosure. -
FIGS. 5C and 5D are cross-sections of the semiconductor structure in accordance with some embodiments of the present disclosure. -
FIG. 5E is a top view of the semiconductor structure in accordance with some embodiments of the present disclosure. -
FIGS. 6A to 6C are top views of a semiconductor structure in accordance with some embodiments of the present disclosure. -
FIG. 7 is a flowchart illustrating a method for manufacturing a semiconductor structure in accordance with some embodiments of the present disclosure. -
FIGS. 8A-8J are cross-sections and top views of a semiconductor structure at various stages of manufacture in accordance with some embodiments of the present disclosure. -
FIGS. 9A-9M are cross-sections and top views of a semiconductor structure at various stages of manufacture in accordance with some embodiments of the present disclosure. -
FIGS. 10A-10M are cross-sections and top views of a semiconductor structure at various stages of manufacture in accordance with some embodiments of the present disclosure. - The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- Embodiments of the present disclosure are discussed in detail below. It should be appreciated, however, that the present disclosure provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative and do not limit the scope of the disclosure.
- Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper,” “lower,” “left,” “right” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. It should be understood that when an element is referred to as being “connected to” or “coupled to” another element, it may be directly connected to or coupled to the other element, or intervening elements may be present.
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FIG. 1 is a top view of asemiconductor structure 1 in accordance with some embodiments of the present disclosure. Thesemiconductor structure 1 includes atransistor 10. Thetransistor 10 includes asemiconductive substrate 101, agate structure 102, a first pair of highlydoped regions 103S and 103D and adielectric element 105. - The
semiconductive substrate 101 has atop surface 101A. Thegate structure 102 may be formed over thetop surface 101A. The doped regions 1035 and 1031 may be separated by thegate structure 102. Thedielectric element 105 may be embedded in thesemiconductive substrate 101. Thedielectric element 105 may be misaligned with thedoped regions 103S and 103D. In detail, thedielectric element 105 may be laterally and vertically misaligned with thedoped regions 103S and 103D. -
FIG. 2A is a top view of asemiconductor structure 2 in accordance with some embodiments of the present disclosure. Thesemiconductor structure 2 includes atransistor 20. Thetransistor 20 includes asemiconductive substrate 201, agate structure 202, a first pair of highlydoped regions 203S and 203D, a second pair of highly doped regions 204S and 204D and adielectric element 205. - The
semiconductive substrate 201 has atop surface 201A. Thegate structure 202 may be formed over thetop surface 201A. The dopedregions 203S and 203D may be separated by thegate structure 202. The doped regions 2045 and 204D may be separated by thegate structure 202. Thedielectric element 205 may be embedded in thesemiconductive substrate 201. Thedielectric element 205 may be misaligned with the dopedregions 203S and 203D and misaligned with the doped regions 2045 and 204D. In detail, thedielectric element 205 may be laterally and vertically misaligned with the dopedregions 203S and 203D. Further, thedielectric element 205 may be laterally and vertically misaligned with the doped regions 204S and 204D. In some embodiments, thedielectric element 205 may be formed under thegate structure 202. -
FIGS. 2B and 2C are cross-sections of thesemiconductor structure 2 in accordance with some embodiments of the present disclosure. Thegate structure 202 includes agate electrode 202 a,spacers 202 b and adielectric layer 202 c. Thedielectric layer 202 c may be formed between thesemiconductive substrate 201 and thegate electrode 202 a. Thespacers 202 b may be formed over thesemiconductive substrate 201. Thespacers 202 b cover thedielectric layer 202 c and part of thegate electrode 202 a. In some embodiments, thespacers 202 b cover two sides of the stack of thedielectric layer 202 c and thegate electrode 202 a, and a surface of thegate electrode 202 a may be exposed between thespacers 202 b. -
FIG. 2D is a top view of thesemiconductor structure 2 in accordance with some embodiments of the present disclosure.FIG. 2E is a cross-section of thesemiconductor structure 2 in accordance with some embodiments of the present disclosure. As shown inFIGS. 2D and 2E , thetransistor 20 includes a plurality ofdielectric elements 205′. Each of the plurality ofdielectric elements 205′ may be laterally and vertically misaligned with the dopedregions 203S and 203D. Further, each of the plurality ofdielectric elements 205′ may be laterally and vertically misaligned with the doped regions 204S and 204D. In some embodiments, thedielectric elements 205′ may be formed within a center area C related to thetop surface 201A of the semiconductive substrate 201. -
FIG. 3A is a top view of asemiconductor structure 3 in accordance with some embodiments of the present disclosure. Thesemiconductor structure 3 includes atransistor 30. Thetransistor 30 includes a semiconductive substrate 301, agate structure 302, a first pair of highlydoped regions 303S and 303D, a second pair of highlydoped regions 304S and 304D and adielectric element 305. - The
semiconductive substrate 301 has atop surface 301A. Thegate structure 302 is disposed over thetop surface 301A. Thegate structure 302 may be in a shape of crisscross. The dopedregions 303S and 303D are separated by thegate structure 302. The dopedregions 304S and 304D are separated by thegate structure 302. In some embodiments, the doped regions 303S and 304S may be source regions of thetransistor 30. The dopedregions transistor 30. - In some embodiments, the
gate structure 302 with the shape of crisscross defines thesemiconductive substrate 301 of thetransistor 301 as four parts. Further, relative to the four parts defined in thesemiconductive substrate 301 of thetransistor 30, the doped regions 303S and 304S may be formed diagonally in thesemiconductive substrate 301 of thetransistor 301. Similarly, the dopedregions semiconductive substrate 301 of thetransistor 30. In some embodiments, the source region 303S may be paired with thedrain region 304D, and the source region 304S may be paired with the drain region 3031). - The
dielectric element 305 is embedded in thesemiconductive substrate 301. Thedielectric element 305 is misaligned with the dopedregions 3035 and 303D and misaligned with the dopedregions 304S and 304D. In detail, thedielectric element 305 is laterally and vertically misaligned with the dopedregions 303S and 303D. Further, thedielectric element 305 is laterally and vertically misaligned with the dopedregions 304S and 304D. In some embodiments, thedielectric element 305 is formed under the gate structure 303 with the shape of crisscross. -
FIG. 3B is a top view of thesemiconductor structure 3 in accordance with some embodiments of the present disclosure. As shown inFIG. 3B , thetransistor 30 includes a plurality ofdielectric elements 305′. Each of the plurality ofdielectric elements 305′ may be laterally and vertically misaligned with the dopedregions 303S and 303D. Further, each of the plurality ofdielectric elements 305′ may be laterally and vertically misaligned with the dopedregions 304S and 304D. -
FIG. 4A is a top view of asemiconductor structure 4 in accordance with some embodiments of the present disclosure. Thesemiconductor structure 4 includes atransistor 40. Thetransistor 40 includes asemiconductive substrate 401, agate 402, a source region 403S, a drain region 4031) and anisolation component 405. - The source region 403S and the
drain region 403D may be formed in thesemiconductor substrate 401. Thegate 402 may be formed over thesemiconductor substrate 401 and between the source region 403S and thedrain region 403D. There may be achannel 403C between the source region 403S and thedrain region 403D. Theisolation component 405 may be embedded in thesemiconductive substrate 401. In detail, theisolation component 405 may be spaced apart from thechannel 403C between the source region 403S and thedrain region 403D. In other words, the formation of theisolation component 405 may not block thechannel 403C between the source region 403S and thedrain region 403D. -
FIG. 4B is a top view of thesemiconductor structure 4 in accordance with some embodiments of the present disclosure. Thetransistor 40 includes twoisolation components 405′. Theisolation components 405′ may be embedded in thesemiconductive substrate 401. In detail, both of theisolation components 405′ may be spaced apart from thechannel 403C between the source region 403S and thedrain region 403D. In other words, the formations of theisolation components 405′ may not block thechannel 403C between the source region 403S and thedrain region 403D. In sonic embodiments, thechannel 403C may be a shortest channel between the source region 403S and thedrain region 403D. -
FIG. 4C is a top view of thesemiconductor structure 4 in accordance with some embodiments of the present disclosure. The source region 403S has a source contact 403SC. Thedrain region 403D has a drain contact 403DC. Thegate 402 has a pair of gate contacts 402G1 and 402G2. The source contact 403SC and the drain contact 403DC may protrude from the surface of thesemiconductive substrate 401. The gate contacts 402G1 and 402G2 may protrude from a surface of thegate 402, and be used for being applied voltage to active the channel 4030. -
FIG. 5A is a top view of a semiconductor structure 5 in accordance with sonic embodiments of the present disclosure. The semiconductor structure 5 includes atransistor 50. Thetransistor 50 includes asemiconductive substrate 501, agate 502, a source region 503S, adrain region 503D, a source region 504S, adrain region 504D and anisolation component 505. - The source regions 503S, 504S and the
drain regions semiconductor substrate 501. Thegate 502 may be formed over thesemiconductor substrate 501. Further, thegate 502 may be formed between the source region 503S and thedrain region 503D, and between the source region 504S and thedrain region 504D. There may be achannel 503C between the source region 503S and thedrain region 503D, and achannel 504C between the source region 504S and thedrain region 504D. Theisolation component 405 may be embedded in thesemiconductive substrate 501. - In detail, the
isolation component 505 may be spaced apart from thechannel 503C between the source region 503S and thedrain region 503D. Theisolation component 505 may be spaced apart from thechannel 504C between the source region 504S and thedrain region 504D. In other words, the formation of theisolation component 505 may not block thechannel 503C between the source region 503S and thedrain region 503D and may not block thechannel 504C between the source region 504S and thedrain region 504D. -
FIG. 5B is a top view of the semiconductor structure 5 in accordance with some embodiments of the present disclosure. The source region 503S has a source contact 5035C. Thedrain region 503D has a drain contact 503DC. The source region 504S has a 504SC. Thedrain region 504D has a drain contact 504DC. Thegate 502 has a pair of gate contacts 502G1 and 502G2. -
FIGS. 5C and 5D are cross-sections of the semiconductor structure 5 in accordance with some embodiments of the present disclosure. The source contacts 503SC, 504SC and the drain contacts 503DC, 504DC may protrude from the surface of thesemiconductive substrate 501. The gate contacts 502G1 and 502G2 may protrude from a surface of thegate 502, and be used for being applied voltage to active thechannels gate structure 502 includes agate electrode 502 a,spacers 502 b and adielectric layer 502 c. Thedielectric layer 502 c may be formed between thesemiconductive substrate 501 and thegate electrode 502 a. Thespacers 502 b may be formed over thesemiconductive substrate 501. Thespacers 502 b cover thedielectric layer 502 c and part of thegate electrode 502 a. In some embodiments, thespacers 502 b cover two sides of the stack of thedielectric layer 502 c and thegate electrode 502 a, and a surface of thegate electrode 502 a may be exposed between thespacers 502 b. -
FIG. 5E is a top view of the semiconductor structure 5 in accordance with some embodiments of the present disclosure. As shown inFIG. 5E , thetransistor 50 includes a plurality ofisolation components 505′. Each of the plurality ofisolation components 505′ may be spaced apart from thechannel 503C between the source region 503S and thedrain region 503D. Each of the plurality of theisolation components 505′ may be spaced apart from thechannel 504C between the source region 504S and thedrain region 504D. In other words, the formations of theisolation components 505′ may not block thechannel 503C between the source region 503S and the drain region 5031) and may not block thechannel 504C between the source region 504S and the drain region 504S. -
FIG. 6A is a top view of asemiconductor structure 6 in accordance with some embodiments of the present disclosure. Thesemiconductor structure 6 includes atransistor 60. Thetransistor 60 includes asemiconductive substrate 601, a gate structure 602., a source region 603S, adrain region 603D, a source region 604S, adrain region 604D and anisolation component 605. - The source regions 603S, 604S and the
drain regions semiconductor substrate 601 Thegate 602 may be formed in a shape of crisscross over thesemiconductor substrate 601. Thegate structure 602 may be formed between the source region 603S and thedrain region 603D, and between the source region 604S and thedrain region 604D. In other words, the source region 603S and thedrain region 603D are separated by thegate 602. The source region 604S and thedrain region 604D are separated by thegate 602. - Further, the
gate structure 602 may be formed between the source region 603S and thedrain region 604D, and between the source region 604S and thedrain region 603D. In other words, the source region 604S and thedrain region 603D are separated by thegate 602. The source region 603S and the drain region 601D are separated by thegate 602. Accordingly, there may be a channel CH1 between the source region 603S and thedrain region 603D, a channel CH2 between the source region 604S and thedrain region 604D, a channel CH3 between the source region 603S and thedrain region 604D, and a channel CH4 between the source region 604S and thedrain region 603D. Theisolation component 605 may be embedded in thesemiconductive substrate 601. - In detail, the
isolation component 605 may be spaced apart from the channel CHI between the source region 603S and thedrain region 603D. Theisolation component 605 may be spaced apart from the channel CH2 between the source region 604S and thedrain region 604D. In other words, the formation of theisolation component 605 may not block the channel CH1 between the source region 603S and thedrain region 603D and may not block the channel CH2 between the source region 604S and thedrain region 604D. - Further, the
isolation component 605 may be spaced apart from the channel CH3 between the source region 603S and thedrain region 604D. Theisolation component 605 may be spaced apart from the channel CH4 between the source region 604S and thedrain region 603D. In other words, the formation of theisolation component 605 may not block the channel CH3 between the source region 603S and thedrain region 604D and may not block the channel CH4 between the source region 604S and thedrain region 603D. -
FIG. 6B is a top view of thesemiconductor structure 6 in accordance with some embodiments of the present disclosure. The source region 603S has a source contact 603SC. Thedrain region 603D has a drain contact 603DC. The source region 604S has a 604SC. Thedrain region 604D has a drain contact 604DC. The source contacts 603SC, 604SC and the drain contacts 603DC, 604DC may protrude from the surface of thesemiconductive substrate 601. Thegate 602 has a first pair of gate contacts 602G1 and 602G2, and a second pair of gate contacts 602G3 and 602G4. The first pair of gate contacts 602G1 and 602G2 may protrude from a surface of thegate 602, and be used for being applied voltage to active the channel s CH1 and CH2. The second pair of gate contacts 602G3 and 602G4 may protrude from the surface the surface of thegate 602, and be used for being applied voltage to active the channels CH3 and CH4. -
FIG. 6C is a top view of thesemiconductor structure 6 in accordance with some embodiments of the present disclosure. As shown inFIG. 6C , thetransistor 60 includes a plurality ofisolation components 605′. Each of the plurality ofisolation components 605′ may be spaced apart from the channel CH1 between the source region 603S and thedrain region 603D. Each of the plurality of theisolation components 605′ may be spaced apart from the channel CH2 between the source region 604S and thedrain region 604D. Each of the plurality of theisolation components 605′ may be spaced apart from the channel CH3 between the source region 603S and thedrain region 604D. Each of the plurality of theisolation components 605′ may be spaced apart from the channel CH4 between the source region 604S and thedrain region 603D. In other words, the formations of theisolation components 605′ may not block the channels CH1 to CH4 between the source regions 603S, 604S and thedrain regions - Some embodiments of the present disclosure provide a method for manufacturing a semiconductor structure as shown in
FIG. 7 . The method includes:operation 701, in which a semiconductive substrate of a transistor is provided;operation 702, in which at least one dielectric element is formed in the semiconductive substrate of the transistor;operation 703, in which a gate structure is formed over the semiconductive substrate; andoperation 704, in which a source region and a drain region are formed in the semiconductive substrate of the transistor, wherein the gate structure is between the source region and the drain region, and a channel between the source region and the drain region is formed away from the at least one dielectric element. - In some embodiments,
operation 702, in which the at least one dielectric element is formed, includes two sub-operations: (i) forming at least one trench in the semiconductive substrate of the transistor; and (ii) filling the at least one trench with oxide material for forming the at least one dielectric element. - The above methods are illustrated in more detail in the following description by providing various embodiments. However, the description meant to be illustrative only, and is not intended to limit the present disclosure.
- To illustrate
operation 701 of the method,FIGS. 8A and 8B are provided in accordance with some embodiments of the present disclosure. As shown inFIG. 8A , asemiconductive substrate 800 is provided. One unit oftransistor 810 may be defined in thesemiconductive substrate 800.FIG. 8B is a cross-section of thesemiconductive substrate 800 inFIG. 8A . -
FIGS. 8C to 8F illustrateoperation 702 of the method in accordance with some embodiments of the present disclosure. When operations of shallow trench isolation (STI) are performed for defining thetransistor 810, the operations of STI are also performed for forming at least onedielectric element 820 in thesemiconductive substrate 800 of thetransistor 810. As shown inFIG. 8C , thesemiconductive substrate 800 is etched for defining thetransistor 810. At the same time, thesemiconductive substrate 800 within the area of thetransistor 810 is etched. In detail, at least onetrench 830 is formed in thesemiconductive substrate 800 of thetransistor 810 while thesemiconductive substrate 800 is etched for defining thetransistor 810.FIG. 8D is a cross-section of thesemiconductive substrate 800 inFIG. 8C . - As shown in
FIG. 8E , when the filling operation of STI is performed with oxide material, the at least onetrench 830 in thesemiconductive substrate 800 of thetransistor 810 is filled with the oxide material at the same time. Accordingly, the at least onedielectric element 820 is formed in thesemiconductive substrate 800 of thetransistor 810.FIG. 8F is a cross-section of thesemiconductive substrate 800 in FIG. -
FIGS. 8G to 8H illustrateoperation 703 of the method in accordance with some embodiments of the present disclosure. As shown inFIG. 8G , agate structure 850 is formed over thesemiconductive substrate 800.FIG. 8H is a cross-section of thesemiconductive substrate 800 inFIG. 8G .FIGS. 8I to 8J illustrateoperation 704 of the method in accordance with some embodiments of the present disclosure. As shown inFIG. 8I , a source region 840S is formed in thesemiconductive substrate 800, and a drain region 840D is formed in thesemiconductive substrate 800. In some embodiments, thegate structure 850 is between the source region 840S and the drain region 840D. A channel between the source region 840S and the drain region 840D is formed away from the at least onedielectric element 820.FIG. 8J is a cross-section of thesemiconductive substrate 800 inFIG. 8I . - To illustrate
operation 701 of the method,FIGS. 9A and 9B are provided in accordance with some embodiments of the present disclosure. As shown inFIG. 9A , asemiconductive substrate 900 is provided. One unit oftransistor 910 may be defined in thesemiconductive substrate 900.FIG. 9B is a cross-section of thesemiconductive substrate 900 in 9A. -
FIGS. 9C to 9F illustrateoperation 702 of the method in accordance with some embodiments of the present disclosure. When operations of STI are performed for defining thetransistor 910, the operations of STI are also performed for forming plurality ofisolation components 920 in thesemiconductive substrate 900 of thetransistor 910. As shown inFIG. 9C , thesemiconductive substrate 900 is etched for defining thetransistor 910. At the same time, thesemiconductive substrate 900 within the area of thetransistor 910 is etched. In detail, a plurality oftrenches 930 are formed in thesemiconductive substrate 900 of thetransistor 910 while thesemiconductive substrate 900 is etched for defining thetransistor 910.FIG. 9D is a cross-section of thesemiconductive substrate 900 inFIG. 9C . - As shown in
FIG. 9E , while the filling operation of is performed with oxide material, thetrenches 930 in thesemiconductive substrate 900 of thetransistor 910 is filled with the oxide material at the same time. Accordingly, theisolation components 920 are formed in thesemiconductive substrate 900 of thetransistor 910.FIG. 9F is a cross-section of thesemiconductive substrate 900 inFIG. 9E . -
FIGS. 9G to 9H illustrateoperation 703 of the method in accordance with some embodiments of the present disclosure. As shown inFIG. 9G , a gate structure 95( ) is formed over thesemiconductive substrate 900.FIG. 9H is a cross-section of thesemiconductive substrate 900 inFIG. 9G .FIGS. 9I to 9J illustrateoperation 704 of the method in accordance with some embodiments of the present disclosure. As shown inFIG. 91 , source regions 940S and 942S are formed in thesemiconductive substrate 900, anddrain regions semiconductive substrate 900. In some embodiments, thegate structure 950 is between the source region 940S and thedrain region 940D, and is between thesource region 9405 and thedrain region 940D. A channel between the source region 940S and thedrain region 940D is formed away from theisolation components 920. A channel between the source region 942S and thedrain region 942D is formed away from theisolation components 920.FIG. 9J is a cross-section of thesemiconductive substrate 900 inFIG. 9I . - In some embodiments, contacts for the source regions, the drain regions and the gate structure may be formed.
FIGS. 9K to 9M illustrate the method in accordance with some embodiments of the present disclosure. As shown inFIG. 9K , a source contact 940SC is formed on the source region 940S. A source contact 9425C is formed on the source region 942S. A drain contact 940DC is formed on thedrain region 940D. A drain contact 942DC is formed on thedrain region 942D. Further, gate contacts 950G1 and 950G2 are formed on a surface of thegate structure 950.FIGS. 9L and 9M are cross-sections of thesemiconductive substrate 900 inFIG. 9K . - To illustrate
operation 701 of the method,FIGS. 10A and 10B are provided in accordance with some embodiments of the present disclosure. As shown inFIG. 10A , asemiconductive substrate 100 is provided. One unit oftransistor 110 may be defined in thesemiconductive substrate 100.FIG. 9B is a cross-section of thesemiconductive substrate 100 inFIG. 10A . -
FIGS. 10C to 10F illustrateoperation 702 of the method in accordance with some embodiments of the present disclosure. When operations of STI are performed for defining thetransistor 110, the operations of STI are also performed for forming anisolation component 120 in thesemiconductive substrate 100 of thetransistor 110. As shown inFIG. 10C , thesemiconductive substrate 100 is etched for defining thetransistor 110. At the same time, thesemiconductive substrate 100 of thetransistor 110 is etched. In detail, atrench 130 is formed in thesemiconductive substrate 100 of thetransistor 110 while thesemiconductive substrate 100 is etched for defining thetransistor 110.FIG. 10D is a cross-section of thesemiconductive substrate 100 inFIG. 10C . - As shown in
FIG. 10E , while the filling operation of STI is performed with oxide material, thetrench 130 in thesemiconductive substrate 100 of thetransistor 110 is filled with the oxide material at the same time. Accordingly, theisolation component 120 is formed in thesemiconductive substrate 100 of thetransistor 110.FIG. 10F is a cross-section of thesemiconductive substrate 100 inFIG. 10E . -
FIGS. 10G to 10H illustrateoperation 703 of the method in accordance with some embodiments of the present disclosure. As shown inFIG. 10G , agate structure 150 is formed over thesemiconductive substrate 100. Thegate structure 150 is in a shape of crisscross.FIG. 10H is a cross-section of thesemiconductive substrate 100 inFIG. 10G ,FIGS. 10I to 10J illustrateoperation 704 of the method in accordance with some embodiments of the present disclosure. As shown inFIG. 101 , source regions 140S and 142S are formed in thesemiconductive substrate 100, and drain regions 140D and 142D are formed in thesemiconductive substrate 100. - In detail, the
gate structure 150 is between the source region 140S and the drain region 140D. A channel between the source region 140S and the drain region 140D is formed away from theisolation components 120. Thegate structure 150 is between the source region 142S and the drain region 142D. A channel between the source region 142S and the drain region 142D is formed away from theisolation components 120. Further, thegate structure 150 is between the source region 140S and the drain region 142D. A channel between the source region 140S and the drain region 142D is formed away from theisolation components 120. Thegate structure 150 is between the source region 142S and the drain region 140D. A channel between the source region 142S and the drain region 1401D is formed away from theisolation components 120.FIG. 10J is a cross-section of thesemiconductive substrate 100 inFIG. 10I . - In some embodiments, contacts for the source regions, the drain regions and the gate structure may be formed.
FIGS. 10K to 10M illustrate the method in accordance with some embodiments of the present disclosure. As shown inFIG. 10K , a source contact 140SC is formed on the source region 140S. A source contact 142SC is formed on the source region 142S. A drain contact 140DC is formed on the drain region 140D. A drain contact 142DC is formed on the drain region 142D. Further, gate contacts 150G1 to 150G4 are formed on a surface of thegate structure 150. In some embodiments, the gate contacts 150G1 to 150G4 are respectively formed at four ends of thegate 150 with the shape of crisscross.FIGS. 10L and 10M are cross-sections of thesemiconductive substrate 100 inFIG. 10K . In some embodiments, a width of the mentioned gate or gate structure of the semiconductor structure is greater than 20 micrometers. - Some embodiments of the present disclosure provide a semiconductor structure. The semiconductor structure includes a transistor. The transistor includes a semiconductive substrate, a gate structure, a first pair of highly doped regions and a dielectric element. The semiconductive substrate has a top surface. The gate structure is over the top surface. The first pair of highly doped regions is separated by the gate structure. The dielectric element is embedded in the semiconductive substrate. The dielectric element is laterally and vertically misaligned with the first pair of highly doped regions.
- Some embodiments of the present disclosure provide a semiconductor structure. The semiconductor structure includes a transistor. The transistor includes a semiconductive substrate, a first source region, a first drain region, a gate and at least one isolation component. The first source region is in the semiconductive substrate. The first drain region is in the semiconductive substrate. The gate is over the semiconductive substrate and between the first source region and the first drain region. The at least one isolation component is embedded in the semiconductive substrate. The at least one isolation component is spaced apart from a first channel formed between the first source region and the first drain region.
- Some embodiments of the present disclosure provide a method for manufacturing a semiconductor structure. The method includes: providing a semiconductive substrate of a transistor; forming at least one dielectric element in the semiconductive substrate of the transistor; forming a source region and a drain region in the semiconductive substrate of the transistor, wherein a channel between the source region and the drain region is formed away from the at least one dielectric element.
- The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.
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