US20210305147A1 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- US20210305147A1 US20210305147A1 US17/001,559 US202017001559A US2021305147A1 US 20210305147 A1 US20210305147 A1 US 20210305147A1 US 202017001559 A US202017001559 A US 202017001559A US 2021305147 A1 US2021305147 A1 US 2021305147A1
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- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
Definitions
- Embodiments described herein relate generally to semiconductor devices.
- a power semiconductor chip is mounted on a metal base with an insulating substrate interposed between the power semiconductor chip and the metal base.
- the power semiconductor chip is, for example, a metal oxide field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), or a diode.
- MOSFET metal oxide field effect transistor
- IGBT insulated gate bipolar transistor
- a detection terminal for measuring a main current flowing between the two main terminals is provided for detecting a short circuit in the module and performing the life prediction of the module.
- Two detection terminals are provided in a main current path, and the main current is obtained by integrating the voltage detected between the two detection terminals.
- an inductance of a certain size or more is required in the main current path between the two detection terminals.
- the length of the metal layer on the insulating substrate is required to be increased, an additional metal layer is required to be provided, the length of the bonding wire is required to be increased, or an additional bonding wire is required to be provided. For this reason, there is a problem that the size of the power semiconductor module becomes large.
- FIG. 1 is a schematic top view of a semiconductor device according to a first embodiment
- FIG. 2 is a schematic cross-sectional view of the semiconductor device according to the first embodiment
- FIGS. 3A and 3B are schematic cross-sectional views of the semiconductor device according to the first embodiment
- FIG. 4 is an equivalent circuit diagram of the semiconductor device according to the first embodiment
- FIG. 5 is a schematic top view of a semiconductor device according to a second embodiment
- FIG. 6 is an equivalent circuit diagram of the semiconductor device according to the second embodiment.
- FIG. 7 is a schematic cross-sectional view of a semiconductor device according to a third embodiment.
- FIGS. 8A and 8B are schematic cross-sectional views of the semiconductor device according to the third embodiment.
- FIG. 9 is a schematic top view of a semiconductor device according to a fourth embodiment.
- FIG. 10 is an equivalent circuit diagram of the semiconductor device according to the fourth embodiment.
- a semiconductor device includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the first end and the second end of the first main terminal; and a second detection terminal being electrically connected to the first metal layer.
- a semiconductor device of a first embodiment includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the first end and the second end of the first main terminal; and a second detection terminal being electrically connected to the first metal layer.
- FIG. 1 is a schematic top view of the semiconductor device according to the first embodiment.
- FIG. 2 is a schematic cross-sectional view of the semiconductor device according to the first embodiment.
- FIG. 2 illustrates a cross section taken along the line AA′ of FIG. 1 .
- FIGS. 3A and 3B are schematic cross-sectional views of the semiconductor device according to the first embodiment.
- FIG. 3A illustrates a cross section taken along the line BB′ of FIG. 1 .
- FIG. 3B illustrates a cross section taken along the line CC′ of FIG. 1 .
- FIG. 4 is an equivalent circuit diagram of the semiconductor device according to the first embodiment.
- the semiconductor device of the first embodiment is a power semiconductor module 100 .
- the power semiconductor module 100 according to the first embodiment two MOSFETs are connected in series.
- the power semiconductor module according to the first embodiment is a so-called “2 in 1” type module in which a half bridge circuit can be configured with one module.
- a three-phase inverter circuit can be configured by using three power semiconductor modules according to the first embodiment.
- the power semiconductor module 100 has a power terminal N, a power terminal P, an AC output terminal AC, a first detection terminal S 1 , a second detection terminal S 2 , and an inductor L 1 .
- the first detection terminal S 1 and the second detection terminal S 2 have a function of monitoring a main current flowing between the power terminal N and the AC output terminal AC.
- the power semiconductor module 100 includes a resin case 10 (frame body), a lid 12 , a first main terminal 14 , a second main terminal 16 , an AC output terminal 18 , a first gate terminal 20 , a second gate terminal 22 , a first detection terminal 24 , a second detection terminal 26 , a metal base 28 , an insulating substrate 30 , a first metal layer 32 , a second metal layer 34 , a third metal layer 36 , a first gate metal layer 38 , a second gate metal layer 40 , a back-surface metal layer 42 , a first MOSFET 44 (semiconductor chip), a second MOSFET 46 , a bonding wire 48 , and a sealing resin 50 (sealing material).
- a resin case 10 frame body
- lid 12 includes a lid 12 , a lid 12 , a first main terminal 14 , a second main terminal 16 , an AC output terminal 18 , a first gate terminal 20 , a second gate terminal 22 ,
- the first main terminal 14 has a first end 14 a, a second end 14 b, and a first wiring connection hole 14 c (hole).
- the second main terminal 16 has a third end 16 a, a fourth end 16 b, and a second wiring connection hole 16 c .
- the first detection terminal 24 has an end 24 a.
- the second detection terminal 26 has an end 26 a.
- FIG. 1 is a top view of the power semiconductor module 100 from which the lid 12 and the sealing resin 50 are removed.
- the metal base 28 is made of, for example, copper.
- a heat dissipation plate (not illustrated) is connected to a back surface of the metal base 28 .
- the insulating substrate 30 is provided on the metal base 28 .
- the insulating substrate 30 is provided between the metal base 28 and the first MOSFET 44 and between the metal base 28 and the second MOSFET 46 .
- the insulating substrate 30 has a function of electrically separating the metal base 28 from the first MOSFET 44 and the second MOSFET 46 .
- the insulating substrate 30 is made of, for example, ceramic.
- the insulating substrate 30 is made of, for example, aluminum oxide, aluminum nitride, or silicon nitride.
- a first metal layer 32 , a second metal layer 34 , a third metal layer 36 , a first gate metal layer 38 , and a second gate metal layer 40 are provided on the surface of the insulating substrate 30 .
- the first metal layer 32 , the second metal layer 34 , the third metal layer 36 , the first gate metal layer 38 , and the second gate metal layer 40 are made of, for example, copper.
- the back-surface metal layer 42 is provided on the back surface of the insulating substrate 30 .
- the back-surface metal layer 42 is made of, for example, copper.
- the back-surface metal layer 42 is bonded to the metal base 28 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated).
- the resin case 10 is provided around the metal base 28 and the insulating substrate 30 . A portion of the resin case 10 is provided on the metal base 28 .
- the resin case 10 is an example of a frame body.
- the resin case 10 has a function of protecting the first MOSFET 44 , the second MOSFET 46 , and the insulating substrate 30 .
- the lid 12 is provided on the resin case 10 .
- the lid 12 interposes the first MOSFET 44 and the second MOSFET 46 between the lid 12 and the insulating substrate 30 .
- the lid 12 has a function of protecting the first MOSFET 44 , the second MOSFET 46 , and the insulating substrate 30 .
- the first MOSFET 44 is provided on the insulating substrate 30 .
- the first MOSFET 44 has a first source electrode 44 a, a first drain electrode 44 b, and a first gate electrode 44 c.
- the first source electrode 44 a is an example of an upper electrode.
- the first drain electrode 44 b is an example of a lower electrode.
- the first MOSFET 44 is provided on the third metal layer 36 .
- the first drain electrode 44 b is fixed on the third metal layer 36 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated).
- the first drain electrode 44 b is bonded to the third metal layer 36 .
- the first MOSFET 44 is formed by using, for example, silicon carbide.
- the first source electrode 44 a is electrically connected to the first metal layer 32 .
- the first source electrode 44 a is electrically connected to the first metal layer 32 via the bonding wire 48 .
- the first drain electrode 44 b is electrically connected to the second metal layer 34 .
- the first drain electrode 44 b is electrically connected to the second metal layer 34 via the third metal layer 36 , the bonding wire 48 , and the second MOSFET 46 .
- the second MOSFET 46 is provided on the insulating substrate 30 .
- the second MOSFET 46 has a second source electrode 46 a, a second drain electrode 46 b, and a second gate electrode 46 c.
- the second MOSFET 46 is provided on the second metal layer 34 .
- the second drain electrode 46 b is fixed on the second metal layer 34 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated).
- the second drain electrode 46 b is bonded to the second metal layer 34 .
- the second source electrode 46 a is electrically connected to the third metal layer 36 .
- the second source electrode 46 a is electrically connected to the third metal layer 36 via the bonding wire 48 .
- the second MOSFET 46 is formed by using, for example, silicon carbide.
- the resin case 10 is filled with the sealing resin 50 .
- the sealing resin 50 is surrounded by the resin case 10 .
- the sealing resin 50 covers the first MOSFET 44 , the second MOSFET 46 , and the insulating substrate 30 .
- the sealing resin 50 is an example of a sealing material.
- the sealing resin 50 has a function of protecting the first MOSFET 44 , the second MOSFET 46 , and the insulating substrate 30 .
- the sealing resin 50 has a function of insulating the first MOSFET 44 , the second MOSFET 46 , and the insulating substrate 30 .
- the sealing resin 50 contains a resin.
- the sealing resin 50 is made of, for example, silicone gel.
- other resins such as an epoxy resin and a polyimide resin can be employed.
- the first main terminal 14 has a first end 14 a, a second end 14 b, and a first wiring connection hole 14 c (hole).
- the first main terminal 14 is electrically connected to the first metal layer 32 .
- the first end 14 a is electrically connected to the first metal layer 32 .
- the first end 14 a is fixed to the first metal layer 32 .
- the first end 14 a is bonded to the first metal layer 32 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated).
- the first end 14 a is bonded to the first metal layer 32 by, for example, ultrasonic bonding.
- the first end 14 a is provided inside the resin case 10 .
- the first end 14 a is surrounded by the sealing resin 50 .
- the second end 14 b is provided outside the resin case 10 and the lid 12 .
- a first wiring connection hole 14 c for connecting a wiring such as a bus bar is provided in the second end 14 b.
- the first main terminal 14 corresponds to the power terminal N in FIG. 4 .
- a negative voltage is applied to the first main terminal 14 from the outside.
- the first main terminal 14 is formed of a metal plate.
- the first main terminal 14 is made of, for example, copper.
- the second main terminal 16 has a third end 16 a, a fourth end 16 b, and a second wiring connection hole 16 c (hole).
- the second main terminal 16 is electrically fixed to the second metal layer 34 .
- the third end 16 a is electrically connected to the second metal layer 34 .
- the third end 16 a is fixed to the second metal layer 34 .
- the third end 16 a is bonded to the second metal layer 34 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated).
- the third end 16 a is bonded to the second metal layer 34 by, for example, ultrasonic bonding.
- the third end 16 a is provided inside the resin case 10 .
- the third end 16 a is surrounded by the sealing resin 50 .
- the fourth end 16 b is provided outside the resin case 10 and the lid 12 .
- a second wiring connection hole 16 c for connecting a wiring such as a bus bar is provided to the fourth end 16 b.
- the second main terminal 16 corresponds to the power terminal P in FIG. 4 .
- a positive voltage is applied to the second main terminal 16 from the outside.
- the second main terminal 16 is formed of a metal plate.
- the second main terminal 16 is made of, for example, copper.
- the AC output terminal 18 is electrically connected to the third metal layer 36 .
- One end of the AC output terminal 18 is fixed to, for example, the third metal layer 36 .
- the AC output terminal 18 corresponds to the AC output terminal AC in FIG. 4 .
- the AC output terminal 18 outputs the output current of the half bridge circuit.
- the first gate terminal 20 is electrically connected to the gate electrode 44 c of the first MOSFET 44 via the bonding wire 48 , the first gate metal layer 38 , and the bonding wire 48 .
- the first gate terminal 20 has a function of applying a gate voltage signal for controlling the first MOSFET 44 to the gate electrode 44 c.
- the second gate terminal 22 is electrically connected to the gate electrode 46 c of the second MOSFET 46 via the bonding wire 48 , the second gate metal layer 40 , and the bonding wire 48 .
- the second gate terminal 22 has a function of applying a gate voltage signal for controlling the second MOSFET 46 to the gate electrode 46 c.
- the first detection terminal 24 is electrically connected to the first main terminal 14 .
- the first detection terminal 24 is fixed between the first end 14 a and the second end 14 b of the first main terminal 14 .
- the first detection terminal 24 has an end 24 a.
- the end 24 a of the first detection terminal 24 is fixed to the first main terminal 14 at the connection portion (X in FIGS. 1 and 3A ).
- the end of the first detection terminal 24 opposite to the end 24 a is provided, for example, outside the resin case 10 and the lid 12 .
- the connection portion X between the first detection terminal 24 and the first main terminal 14 is located between the insulating substrate 30 and the lid 12 .
- At least a portion of the first detection terminal 24 is surrounded by the sealing resin 50 .
- the connection portion X between the first detection terminal 24 and the first main terminal 14 is surrounded by the sealing resin 50 .
- the first detection terminal 24 corresponds to the first detection terminal S 1 in FIG. 4 .
- the first detection terminal 24 has a function of monitoring a main current flowing between the first main terminal 14 and the second main terminal 16 .
- the first detection terminal 24 is made of a metal.
- the first detection terminal 24 is made of, for example, copper.
- the first detection terminal 24 is integrally formed of, for example, the same material as the first main terminal 14 .
- the first detection terminal 24 can be connected to the first main terminal 14 by using, for example, a bonding wire.
- the second detection terminal 26 is electrically connected to the first metal layer 32 .
- the second detection terminal 26 has an end 26 a.
- the end 26 a of the second detection terminal 26 is fixed to, for example, the first metal layer 32 .
- the end 26 a of the second detection terminal 26 is bonded to the first metal layer 32 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated).
- the end 26 a is bonded to the first metal layer 32 by, for example, ultrasonic bonding.
- the end of the second detection terminal 26 opposite to the end 26 a is provided, for example, outside the resin case 10 and the lid 12 .
- the second detection terminal 26 may not be directly fixed to the first metal layer 32 as long as the second detection terminal 26 is electrically connected to the first metal layer 32 .
- the second detection terminal 26 and the first metal layer 32 may be electrically connected via the bonding wire 48 .
- the second detection terminal 26 and the first metal layer 32 may be electrically connected to each other with a metal layer different from the first metal layer 32 interposed between the second detection terminal 26 and the first metal layer 32 .
- At least a portion of the second detection terminal 26 is surrounded by the sealing resin 50 .
- the second detection terminal 26 corresponds to the second detection terminal S 2 in FIG. 4 .
- the second detection terminal 26 has a function of monitoring a main current flowing between the first main terminal 14 and the second main terminal 16 .
- the second detection terminal 26 is made of a metal.
- the second detection terminal 26 is made of, for example, copper.
- a detection terminal for measuring a main current flowing between the two main terminals is provided for detecting a short circuit in the module and performing the life prediction of the module.
- the two detection terminals are provided in the main current path, and the main current is obtained by integrating the voltage detected between the two detection terminals.
- an inductance of a certain magnitude or more is required for the main current path between the two detection terminals.
- a case where the first detection terminal S 1 and the second detection terminal S 2 are provided on the power terminal N side as illustrated in FIG. 4 is considered.
- the inductor L 1 having an inductance of a certain magnitude or more is required for the main path between the first detection terminal S 1 and the second detection terminal S 2 .
- the length of the metal layer on the insulating substrate is required to be increased, an additional metal layer is required to be provided, or the length of the bonding wire is required to be increased, or an additional bonding wires is required to be provided. For this reason, there is a problem that the size of the power semiconductor module becomes large.
- the first detection terminal 24 is connected between the first end 14 a and the second end 14 b of the first main terminal 14 . Therefore, the main current path from the connection portion X to the connection portion between the second detection terminal 26 and the first metal layer 32 functions as the inductor L 1 in FIG. 4 .
- a portion of the first main terminal 14 can be allowed to function as the inductor L 1 . Therefore, in order to increase the inductance of the main current path between the two detection terminals, for example, the length of the metal layer on the insulating substrate is not required to be increased, an additional metal layer is not required to be provided, the length of the bonding wire is not required to be increased, or an additional bonding wire is not required to be provided. That is, in order to increase the inductance of the main current path between the two detection terminals, an additional structure is not required to be added. Therefore, even in a case where the first detection terminal 24 and the second detection terminal 26 are provided, the miniaturization of the power semiconductor module 100 can be realized.
- the inductance between the first detection terminal 24 and the second detection terminal 26 is preferably 2 nH or more.
- the position of the connection portion X between the first detection terminal 24 and the first main terminal 14 can be set arbitrarily. Therefore, adjustment of the magnitude of the inductance of the main current path is facilitated.
- connection portion X between the first detection terminal 24 and the first main terminal 14 is provided at a position apart from the heat source.
- a heat generation is likely to occur at the second end 14 b due to contact resistance of a wire such as a bus bar connected to the second end 14 b.
- a certain distance from the second end 14 b where heat generation is likely to occur to the connection portion X is maintained.
- a certain distance from the first MOSFET 44 and the second MOSFET 46 which generate heat due to device operation, to the connection portion X is maintained.
- the certain distances necessary to avoid temperature increase of the connection portion X can be maintained. Therefore, the change in inductance due to the temperature change is suppressed. Therefore, the decrease in the measurement accuracy of the main current is suppressed.
- the miniaturization of the power semiconductor module can be realized.
- adjustment of the inductance between the two detection terminals is facilitated.
- the decrease in the measurement accuracy of the main current due to the temperature change is suppressed.
- a semiconductor device includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the third end and the fourth end of the second main terminal; and a second detection terminal being electrically connected to the second metal layer.
- the semiconductor device of the second embodiment is different from the semiconductor device according to the first embodiment in that the semiconductor device of the second embodiment includes the first detection terminal fixed between the third end and the fourth end of the second main terminal and the second detection terminal electrically connected to the second metal layer. That is, the semiconductor device of the second embodiment is different from the first embodiment in that the first detection terminal is provided to the second main terminal.
- the semiconductor device of the second embodiment is different from the first embodiment in that the first detection terminal is provided to the second main terminal.
- FIG. 5 is a schematic top view of the semiconductor device according to the second embodiment.
- FIG. 5 is a diagram corresponding to FIG. 1 of the first embodiment.
- FIG. 6 is an equivalent circuit diagram of the semiconductor device according to the second embodiment.
- the semiconductor device of the second embodiment is a power semiconductor module 200 .
- the power semiconductor module according to the second embodiment is a so-called “2 in 1” type module in which a half bridge circuit can be configured with one module.
- a three-phase inverter circuit can be configured by using three power semiconductor modules according to the second embodiment.
- the power semiconductor module 200 has a power terminal N, a power terminal P, an AC output terminal AC, a first detection terminal S 1 , a second detection terminal S 2 , and an inductor L 1 .
- the first detection terminal S 1 and the second detection terminal S 2 have a function of monitoring a main current flowing between the power terminal N and the power terminal P.
- the power semiconductor module 200 includes a resin case 10 , a lid 12 , a first main terminal 14 , a second main terminal 16 , an AC output terminal 18 , a first gate terminal 20 , a second gate terminal 22 , a first detection terminal 24 , a second detection terminal 26 , a metal base 28 , an insulating substrate 30 , a first metal layer 32 , a second metal layer 34 , a third metal layer 36 , a first gate metal layer 38 , a second gate metal layer 40 , a back-surface metal layer 42 , a first MOSFET 44 (semiconductor chip), a second MOSFET 46 , a bonding wire 48 , and a sealing resin 50 (sealing material).
- a resin case 10 a lid 12 , a first main terminal 14 , a second main terminal 16 , an AC output terminal 18 , a first gate terminal 20 , a second gate terminal 22 , a first detection terminal 24 , a second detection terminal 26
- the first main terminal 14 has a first end 14 a, a second end 14 b, and a first wiring connection hole 14 c (hole).
- the second main terminal 16 has a third end 16 a, a fourth end 16 b, and a second wiring connection hole 16 c .
- the first detection terminal 24 has an end 24 a.
- the second detection terminal 26 has an end 26 a.
- FIG. 5 is a top view of the power semiconductor module 200 from which the lid 12 and the sealing resin 50 are removed.
- the first main terminal 14 has a first end 14 a, a second end 14 b, and a first wiring connection hole 14 c (hole).
- the first main terminal 14 is electrically connected to the first metal layer 32 .
- the first main terminal 14 corresponds to the power terminal N in FIG. 6 .
- a negative voltage is applied to the first main terminal 14 from the outside.
- the second main terminal 16 has a third end 16 a, a fourth end 16 b, and a second wiring connection hole 16 c (hole).
- the second main terminal 16 is electrically fixed to the second metal layer 34 .
- the second main terminal 16 corresponds to the power terminal P in FIG. 6 .
- a positive voltage is applied to the second main terminal 16 from the outside.
- the first detection terminal 24 is electrically connected to the second main terminal 16 .
- the first detection terminal 24 is fixed between the third end 16 a and the fourth end 16 b of the second main terminal 16 .
- the first detection terminal 24 has an end 24 a.
- the end 24 a of the first detection terminal 24 is fixed to the second main terminal 16 at the connection portion (Y in FIG. 5 ).
- the end of the first detection terminal 24 opposite to the end 24 a is provided, for example, outside the resin case 10 and the lid 12 .
- the connection portion Y between the first detection terminal 24 and the second main terminal 16 is located between the insulating substrate 30 and the lid 12 .
- At least a portion of the first detection terminal 24 is surrounded by the sealing resin 50 .
- the connection portion Y between the first detection terminal 24 and the second main terminal 16 is surrounded by the sealing resin 50 .
- the first detection terminal 24 corresponds to the first detection terminal S 1 in FIG. 6 .
- the first detection terminal 24 has a function of monitoring a main current flowing between the first main terminal 14 and the second main terminal 16 .
- the first detection terminal 24 is made of a metal.
- the first detection terminal 24 is made of, for example, copper.
- the first detection terminal 24 is integrally formed of, for example, the same material as the second main terminal 16 .
- the first detection terminal 24 can be connected to the second main terminal 16 by using, for example, a bonding wire.
- the second detection terminal 26 is electrically connected to the second metal layer 34 .
- the second detection terminal 26 has an end 26 a.
- the end 26 a of the second detection terminal 26 is fixed to, for example, the second metal layer 34 .
- the end 26 a of the second detection terminal 26 is bonded to the second metal layer 34 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated).
- the end 26 a is bonded by, for example, ultrasonic bonding.
- the end of the second detection terminal 26 opposite to the end 26 a is provided, for example, outside the resin case 10 and the lid 12 .
- the second detection terminal 26 may not be directly fixed to the second metal layer 34 as long as the second detection terminal 26 is electrically connected to the second metal layer 34 .
- the second detection terminal 26 and the second metal layer 34 may be electrically connected via the bonding wire 48 .
- the second detection terminal 26 and the second metal layer 34 may be electrically connected each other with a metal layer different from the second metal layer 34 interposed between the second detection terminal 26 and the second metal layer 34 .
- At least a portion of the second detection terminal 26 is surrounded by the sealing resin 50 .
- the second detection terminal 26 corresponds to the second detection terminal S 2 in FIG. 6 .
- the second detection terminal 26 has a function of monitoring a main current flowing between the first main terminal 14 and the second main terminal 16 .
- the second detection terminal 26 is made of a metal.
- the second detection terminal 26 is made of, for example, copper.
- the second embodiment similarly to the first embodiment, it is possible to realize the miniaturization of the power semiconductor module. In addition, adjustment of the inductance between the two detection terminals is facilitated. In addition, the decrease in the measurement accuracy of the main current due to the temperature change is suppressed.
- a semiconductor device is different from the semiconductor device according to the first embodiment in that a sealing material has a first portion and a second portion made of a material different from that of the first portion, and a connection portion between the first main terminal and the first detection terminal is surrounded by the second portion.
- a sealing material has a first portion and a second portion made of a material different from that of the first portion, and a connection portion between the first main terminal and the first detection terminal is surrounded by the second portion.
- FIG. 7 is a schematic cross-sectional view of the semiconductor device according to the third embodiment.
- FIG. 7 is a diagram corresponding to FIG. 2 of the first embodiment.
- FIGS. 8A and 8B are schematic cross-sectional views of the semiconductor device according to the third embodiment.
- FIGS. 8A and 8B are diagrams corresponding to FIGS. 3A and 3B of the first embodiment.
- the semiconductor device of the third embodiment is a power semiconductor module 300 .
- the power semiconductor module 300 includes a resin case 10 , a lid 12 , a first main terminal 14 , a second main terminal 16 , an AC output terminal 18 , a first gate terminal 20 , a second gate terminal 22 , a first detection terminal 24 , a second detection terminal 26 , a metal base 28 , an insulating substrate 30 , a first metal layer 32 , a second metal layer 34 , a third metal layer 36 , a first gate metal layer 38 , a second gate metal layer 40 , a back-surface metal layer 42 , a first MOSFET 44 (semiconductor chip), a second MOSFET 46 , a bonding wire 48 , and a sealing resin 50 (sealing material).
- a resin case 10 a lid 12 , a first main terminal 14 , a second main terminal 16 , an AC output terminal 18 , a first gate terminal 20 , a second gate terminal 22 , a first detection terminal 24 , a second detection terminal 26
- the first main terminal 14 has a first end 14 a, a second end 14 b, and a first wiring connection hole 14 c (hole).
- the second main terminal 16 has a third end 16 a, a fourth end 16 b, and a second wiring connection hole 16 c .
- the first detection terminal 24 has an end 24 a.
- the second detection terminal 26 has an end 26 a.
- the sealing resin 50 has a first portion 50 a and a second portion 50 b.
- the material of the second portion 50 b is different from the material of the first portion 50 a.
- the second portion 50 b is made by using a material having higher insulation properties than the first portion 50 a.
- the second portion 50 b is made by using a material having higher strength than the first portion 50 a.
- the first portion 50 a is made of, for example, a silicone gel.
- the second portion 50 b is made of, for example, an epoxy resin.
- At least a portion of the first main terminal 14 and the second main terminal 16 is surrounded by the second portion 50 b.
- the connection portion X between the first detection terminal 24 and the first main terminal 14 is surrounded by the second portion 50 b.
- the power semiconductor module 300 it is possible to improve the insulation properties of, for example, the first main terminal 14 and the second main terminal 16 .
- the third embodiment similarly to the first embodiment, it is possible to realize the miniaturization of the power semiconductor module. In addition, adjustment of the inductance between the two detection terminals is facilitated. In addition, the decrease in the measurement accuracy of the main current due to the temperature change is suppressed. In addition, it is possible to further improve the characteristics of the power semiconductor module.
- a semiconductor device according to a fourth embodiment is different from the semiconductor device according to the first embodiment in that the semiconductor device according to the fourth embodiment further includes a third detection terminal electrically connected between the third end and the fourth end of the second main terminal and a fourth detection terminal electrically connected to the second metal layer.
- the semiconductor device according to the fourth embodiment further includes a third detection terminal electrically connected between the third end and the fourth end of the second main terminal and a fourth detection terminal electrically connected to the second metal layer.
- FIG. 9 is a schematic top view of the semiconductor device according to the fourth embodiment.
- FIG. 9 is a diagram corresponding to FIG. 1 of the first embodiment.
- FIG. 10 is an equivalent circuit diagram of the semiconductor device according to the fourth embodiment.
- the semiconductor device of the fourth embodiment is a power semiconductor module 400 .
- the power semiconductor module 400 according to the fourth embodiment is a so-called “2 in 1” type module in which a half bridge circuit can be configured with one module.
- a three-phase inverter circuit can be configured by using three power semiconductor modules according to the fourth embodiment.
- the power semiconductor module 100 includes a power terminal N, a power terminal P, an AC output terminal AC, a first detection terminal S 1 , a second detection terminal S 2 , a third detection terminal S 3 , a fourth detection terminal S 4 , an inductor L 1 , and an inductor L 2 .
- the first detection terminal S 1 and the second detection terminal S 2 , and the third detection terminal S 3 and the fourth detection terminal S 4 respectively have a function of monitoring a main current flowing between the power terminal N and the power terminal P.
- the power semiconductor module 400 includes a resin case 10 , a lid 12 , a first main terminal 14 , a second main terminal 16 , an AC output terminal 18 , a first gate terminal 20 , a second gate terminal 22 , a first detection terminal 24 , a second detection terminal 26 , a metal base 28 , an insulating substrate 30 , a first metal layer 32 , a second metal layer 34 , a third metal layer 36 , a first gate metal layer 38 , a second gate metal layer 40 , a back-surface metal layer 42 , a first MOSFET 44 (semiconductor chip), a second MOSFET 46 , a bonding wire 48 , a sealing resin 50 (sealing material), a third detection terminal 54 , and a fourth detection terminal 56 .
- a resin case 10 a lid 12 , a first main terminal 14 , a second main terminal 16 , an AC output terminal 18 , a first gate terminal 20 , a second gate terminal 22
- the first main terminal 14 has a first end 14 a, a second end 14 b, and a first wiring connection hole 14 c (hole).
- the second main terminal 16 has a third end 16 a, a fourth end 16 b, and a second wiring connection hole 16 c .
- the first detection terminal 24 has an end 24 a.
- the second detection terminal 26 has an end 26 a.
- the third detection terminal 54 has an end 54 a.
- the fourth detection terminal 56 has an end 56 a.
- FIG. 9 is a top view of the power semiconductor module 400 from which the lid 12 and the sealing resin 50 are removed.
- the first main terminal 14 has a first end 14 a, a second end 14 b, and a first wiring connection hole 14 c (hole).
- the first main terminal 14 is electrically connected to the first metal layer 32 .
- the first main terminal 14 corresponds to the power terminal N in FIG. 10 .
- a negative voltage is applied to the first main terminal 14 from the outside.
- the second main terminal 16 has a third end 16 a, a fourth end 16 b, and a second wiring connection hole 16 c (hole).
- the second main terminal 16 is electrically fixed to the second metal layer 34 .
- the second main terminal 16 corresponds to the power terminal P in FIG. 10 .
- a positive voltage is applied to the second main terminal 16 from the outside.
- the first detection terminal 24 is electrically connected to the first main terminal 14 .
- the first detection terminal 24 is fixed between the first end 14 a and the second end 14 b of the first main terminal 14 .
- the first detection terminal 24 has an end 24 a.
- the end 24 a of the first detection terminal 24 is fixed to the first main terminal 14 at the connection portion (X in FIG. 9 ).
- the end of the first detection terminal 24 opposite to the end 24 a is provided, for example, outside the resin case 10 and the lid 12 .
- the connection portion X between the first detection terminal 24 and the first main terminal 14 is located between the insulating substrate 30 and the lid 12 .
- At least a portion of the first detection terminal 24 is surrounded by the sealing resin 50 .
- the connection portion X between the first detection terminal 24 and the first main terminal 14 is surrounded by the sealing resin 50 .
- the first detection terminal 24 corresponds to the first detection terminal S 1 in FIG. 10 .
- the first detection terminal 24 has a function of monitoring a main current flowing between the first main terminal 14 and the second main terminal 16 .
- the first detection terminal 24 is made of a metal.
- the first detection terminal 24 is made of, for example, copper.
- the first detection terminal 24 is integrally formed of, for example, the same material as the first main terminal 14 .
- the first detection terminal 24 can be connected to the first main terminal 14 by using, for example, a bonding wire.
- the second detection terminal 26 is electrically connected to the first metal layer 32 .
- the second detection terminal 26 has an end 26 a.
- the end 26 a of the second detection terminal 26 is fixed to, for example, the first metal layer 32 .
- the end 26 a of the second detection terminal 26 is bonded to the first metal layer 32 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated).
- the end 26 a is bonded to the first metal layer 32 by, for example, ultrasonic bonding.
- the end of the second detection terminal 26 opposite to the end 26 a is provided, for example, outside the resin case 10 and the lid 12 .
- the second detection terminal 26 may not be directly fixed to the first metal layer 32 as long as the second detection terminal 26 is electrically connected to the first metal layer 32 .
- the second detection terminal 26 and the first metal layer 32 may be electrically connected via the bonding wire 48 .
- the second detection terminal 26 and the first metal layer 32 may be electrically connected to each other with a metal layer different from the first metal layer 32 interposed between the second detection terminal 26 and the first metal layer 32 .
- At least a portion of the second detection terminal 26 is surrounded by the sealing resin 50 .
- the second detection terminal 26 corresponds to the second detection terminal S 2 in FIG. 10 .
- the second detection terminal 26 has a function of monitoring a main current flowing between the first main terminal 14 and the second main terminal 16 .
- the second detection terminal 26 is made of a metal.
- the second detection terminal 26 is made of, for example, copper.
- the third detection terminal 54 is electrically connected to the second main terminal 16 .
- the third detection terminal 54 is fixed between the third end 16 a and the fourth end 16 b of the second main terminal 16 .
- the third detection terminal 54 has an end 54 a.
- the end 54 a of the third detection terminal 54 is fixed to the second main terminal 16 at the connection portion (Z in FIG. 9 ).
- the end of the third detection terminal 54 opposite to the end 54 a is provided, for example, outside the resin case 10 and the lid 12 .
- the connection portion Z between the third detection terminal 54 and the second main terminal 16 is located between the insulating substrate 30 and the lid 12 .
- At least a portion of the third detection terminal 54 is surrounded by the sealing resin 50 .
- the connection portion Z between the third detection terminal 54 and the second main terminal 16 is surrounded by the sealing resin 50 .
- the third detection terminal 54 corresponds to the third detection terminal S 3 in FIG. 10 .
- the third detection terminal 54 has a function of monitoring a main current flowing between the first main terminal 14 and the second main terminal 16 .
- the third detection terminal 54 is made of a metal.
- the third detection terminal 54 is made of, for example, copper.
- the third detection terminal 54 is integrally formed of, for example, the same material as the second main terminal 16 .
- the third detection terminal 54 can be connected to the second main terminal 16 by using, for example, a bonding wire.
- the fourth detection terminal 56 is electrically connected to the second metal layer 34 .
- the fourth detection terminal 56 has an end 56 a.
- the end 56 a of the fourth detection terminal 56 is fixed to, for example, the second metal layer 34 .
- the end 56 a of the fourth detection terminal 56 is bonded to the second metal layer 34 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated).
- the end 56 a is bonded by, for example, ultrasonic bonding.
- the end of the fourth detection terminal 56 opposite to the end 56 a is provided, for example, outside the resin case 10 and the lid 12 .
- the fourth detection terminal 56 may not be directly fixed to the second metal layer 34 as long as the fourth detection terminal 56 is electrically connected to the second metal layer 34 .
- the fourth detection terminal 56 and the second metal layer 34 may be electrically connected via the bonding wire 48 .
- the fourth detection terminal 56 and the second metal layer 34 may be electrically connected to each other with a metal layer different from the second metal layer 34 interposed between the fourth detection terminal 56 and the second metal layer 34 .
- At least a portion of the fourth detection terminal 56 is surrounded by the sealing resin 50 .
- the fourth detection terminal 56 corresponds to the fourth detection terminal S 4 in FIG. 10 .
- the fourth detection terminal 56 has a function of monitoring a main current flowing between the first main terminal 14 and the second main terminal 16 .
- the fourth detection terminal 56 is made of a metal.
- the fourth detection terminal 56 is made of, for example, copper.
- the power semiconductor module 400 according to the fourth embodiment can monitor the main currents on both the first main terminal 14 side and the second main terminal 16 side. Therefore, for example, in a case where a short circuit occurs, the location of the short circuit can be easily identified. In addition, for example, the life prediction accuracy of the power semiconductor module 400 is improved.
- the fourth embodiment similarly to the first embodiment, it is possible to realize the miniaturization of the power semiconductor module. In addition, adjustment of the inductance between the two detection terminals is facilitated. In addition, the decrease in the measurement accuracy of the main current due to the temperature change is suppressed. In addition, the location of the short circuit can be easily identified. In addition, the life prediction accuracy of the module is improved.
- the MOSFET is used as the semiconductor chip
- the semiconductor chip is not limited to these.
- transistors or diodes such as IGBT, Schottky barrier diode (SBD), and PIN diode can be employed.
- SBD Schottky barrier diode
- PIN diode a combination of transistors and diodes can be employed.
- the case where the number of semiconductor chips is two has been described as an example, but the number of semiconductor chips may be one or three or more.
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Abstract
Description
- This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2020-052529, filed on Mar. 24, 2020, the entire contents of which are incorporated herein by reference.
- Embodiments described herein relate generally to semiconductor devices.
- In a power semiconductor module, for example, a power semiconductor chip is mounted on a metal base with an insulating substrate interposed between the power semiconductor chip and the metal base. The power semiconductor chip is, for example, a metal oxide field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), or a diode.
- In the power semiconductor module, there are cases where a short circuit in the module is required to be detected or the life prediction of the module is required to be performed. A detection terminal for measuring a main current flowing between the two main terminals is provided for detecting a short circuit in the module and performing the life prediction of the module. Two detection terminals are provided in a main current path, and the main current is obtained by integrating the voltage detected between the two detection terminals.
- In order to improve the measurement accuracy of the main current, an inductance of a certain size or more is required in the main current path between the two detection terminals. In order to increase the inductance, for example, the length of the metal layer on the insulating substrate is required to be increased, an additional metal layer is required to be provided, the length of the bonding wire is required to be increased, or an additional bonding wire is required to be provided. For this reason, there is a problem that the size of the power semiconductor module becomes large.
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FIG. 1 is a schematic top view of a semiconductor device according to a first embodiment; -
FIG. 2 is a schematic cross-sectional view of the semiconductor device according to the first embodiment; -
FIGS. 3A and 3B are schematic cross-sectional views of the semiconductor device according to the first embodiment; -
FIG. 4 is an equivalent circuit diagram of the semiconductor device according to the first embodiment; -
FIG. 5 is a schematic top view of a semiconductor device according to a second embodiment; -
FIG. 6 is an equivalent circuit diagram of the semiconductor device according to the second embodiment; -
FIG. 7 is a schematic cross-sectional view of a semiconductor device according to a third embodiment; -
FIGS. 8A and 8B are schematic cross-sectional views of the semiconductor device according to the third embodiment; -
FIG. 9 is a schematic top view of a semiconductor device according to a fourth embodiment; and -
FIG. 10 is an equivalent circuit diagram of the semiconductor device according to the fourth embodiment. - A semiconductor device according to an embodiment includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the first end and the second end of the first main terminal; and a second detection terminal being electrically connected to the first metal layer.
- In this specification, in some cases, the same or similar members are denoted by the same reference numerals, and duplicate description may be omitted.
- In this specification, in some cases, in order to illustrate the positional relationship of parts and the like, the upward direction of the drawings may be referred to as “upper”, and the downward direction of the drawings may be referred to as “lower”. In this specification, the terms “upper” and “lower” do not necessarily indicate the relationship with the direction of gravity.
- A semiconductor device of a first embodiment includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the first end and the second end of the first main terminal; and a second detection terminal being electrically connected to the first metal layer.
-
FIG. 1 is a schematic top view of the semiconductor device according to the first embodiment.FIG. 2 is a schematic cross-sectional view of the semiconductor device according to the first embodiment.FIG. 2 illustrates a cross section taken along the line AA′ ofFIG. 1 .FIGS. 3A and 3B are schematic cross-sectional views of the semiconductor device according to the first embodiment.FIG. 3A illustrates a cross section taken along the line BB′ ofFIG. 1 .FIG. 3B illustrates a cross section taken along the line CC′ ofFIG. 1 .FIG. 4 is an equivalent circuit diagram of the semiconductor device according to the first embodiment. - The semiconductor device of the first embodiment is a
power semiconductor module 100. As illustrated inFIG. 4 , in thepower semiconductor module 100 according to the first embodiment, two MOSFETs are connected in series. The power semiconductor module according to the first embodiment is a so-called “2 in 1” type module in which a half bridge circuit can be configured with one module. For example, a three-phase inverter circuit can be configured by using three power semiconductor modules according to the first embodiment. - As illustrated in
FIG. 4 , thepower semiconductor module 100 has a power terminal N, a power terminal P, an AC output terminal AC, a first detection terminal S1, a second detection terminal S2, and an inductor L1. The first detection terminal S1 and the second detection terminal S2 have a function of monitoring a main current flowing between the power terminal N and the AC output terminal AC. - The
power semiconductor module 100 according to the first embodiment includes a resin case 10 (frame body), alid 12, a firstmain terminal 14, a secondmain terminal 16, anAC output terminal 18, afirst gate terminal 20, asecond gate terminal 22, afirst detection terminal 24, asecond detection terminal 26, ametal base 28, aninsulating substrate 30, afirst metal layer 32, asecond metal layer 34, athird metal layer 36, a firstgate metal layer 38, a secondgate metal layer 40, a back-surface metal layer 42, a first MOSFET 44 (semiconductor chip), asecond MOSFET 46, abonding wire 48, and a sealing resin 50 (sealing material). - The first
main terminal 14 has afirst end 14 a, asecond end 14 b, and a firstwiring connection hole 14 c (hole). The secondmain terminal 16 has athird end 16 a, afourth end 16 b, and a secondwiring connection hole 16 c. Thefirst detection terminal 24 has anend 24 a. Thesecond detection terminal 26 has anend 26 a. -
FIG. 1 is a top view of thepower semiconductor module 100 from which thelid 12 and thesealing resin 50 are removed. - The
metal base 28 is made of, for example, copper. For example, when mounting thepower semiconductor module 100 on a product, a heat dissipation plate (not illustrated) is connected to a back surface of themetal base 28. - The
insulating substrate 30 is provided on themetal base 28. Theinsulating substrate 30 is provided between themetal base 28 and thefirst MOSFET 44 and between themetal base 28 and thesecond MOSFET 46. Theinsulating substrate 30 has a function of electrically separating themetal base 28 from thefirst MOSFET 44 and thesecond MOSFET 46. - The
insulating substrate 30 is made of, for example, ceramic. Theinsulating substrate 30 is made of, for example, aluminum oxide, aluminum nitride, or silicon nitride. - A
first metal layer 32, asecond metal layer 34, athird metal layer 36, a firstgate metal layer 38, and a secondgate metal layer 40 are provided on the surface of theinsulating substrate 30. Thefirst metal layer 32, thesecond metal layer 34, thethird metal layer 36, the firstgate metal layer 38, and the secondgate metal layer 40 are made of, for example, copper. - The back-
surface metal layer 42 is provided on the back surface of theinsulating substrate 30. The back-surface metal layer 42 is made of, for example, copper. The back-surface metal layer 42 is bonded to themetal base 28 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated). - The
resin case 10 is provided around themetal base 28 and the insulatingsubstrate 30. A portion of theresin case 10 is provided on themetal base 28. Theresin case 10 is an example of a frame body. Theresin case 10 has a function of protecting thefirst MOSFET 44, thesecond MOSFET 46, and the insulatingsubstrate 30. - The
lid 12 is provided on theresin case 10. Thelid 12 interposes thefirst MOSFET 44 and thesecond MOSFET 46 between thelid 12 and the insulatingsubstrate 30. Thelid 12 has a function of protecting thefirst MOSFET 44, thesecond MOSFET 46, and the insulatingsubstrate 30. - The
first MOSFET 44 is provided on the insulatingsubstrate 30. Thefirst MOSFET 44 has afirst source electrode 44 a, afirst drain electrode 44 b, and afirst gate electrode 44 c. Thefirst source electrode 44 a is an example of an upper electrode. Thefirst drain electrode 44 b is an example of a lower electrode. - The
first MOSFET 44 is provided on thethird metal layer 36. Thefirst drain electrode 44 b is fixed on thethird metal layer 36 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated). Thefirst drain electrode 44 b is bonded to thethird metal layer 36. - The
first MOSFET 44 is formed by using, for example, silicon carbide. - The
first source electrode 44 a is electrically connected to thefirst metal layer 32. Thefirst source electrode 44 a is electrically connected to thefirst metal layer 32 via thebonding wire 48. - The
first drain electrode 44 b is electrically connected to thesecond metal layer 34. Thefirst drain electrode 44 b is electrically connected to thesecond metal layer 34 via thethird metal layer 36, thebonding wire 48, and thesecond MOSFET 46. - The
second MOSFET 46 is provided on the insulatingsubstrate 30. Thesecond MOSFET 46 has asecond source electrode 46 a, asecond drain electrode 46 b, and asecond gate electrode 46 c. - The
second MOSFET 46 is provided on thesecond metal layer 34. Thesecond drain electrode 46 b is fixed on thesecond metal layer 34 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated). Thesecond drain electrode 46 b is bonded to thesecond metal layer 34. Thesecond source electrode 46 a is electrically connected to thethird metal layer 36. Thesecond source electrode 46 a is electrically connected to thethird metal layer 36 via thebonding wire 48. - The
second MOSFET 46 is formed by using, for example, silicon carbide. - The
resin case 10 is filled with the sealingresin 50. The sealingresin 50 is surrounded by theresin case 10. The sealingresin 50 covers thefirst MOSFET 44, thesecond MOSFET 46, and the insulatingsubstrate 30. The sealingresin 50 is an example of a sealing material. - The sealing
resin 50 has a function of protecting thefirst MOSFET 44, thesecond MOSFET 46, and the insulatingsubstrate 30. In addition, the sealingresin 50 has a function of insulating thefirst MOSFET 44, thesecond MOSFET 46, and the insulatingsubstrate 30. - The sealing
resin 50 contains a resin. The sealingresin 50 is made of, for example, silicone gel. As the sealingresin 50, for example, other resins such as an epoxy resin and a polyimide resin can be employed. - The first
main terminal 14 has afirst end 14 a, asecond end 14 b, and a firstwiring connection hole 14 c (hole). The firstmain terminal 14 is electrically connected to thefirst metal layer 32. - The
first end 14 a is electrically connected to thefirst metal layer 32. Thefirst end 14 a is fixed to thefirst metal layer 32. Thefirst end 14 a is bonded to thefirst metal layer 32 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated). Thefirst end 14 a is bonded to thefirst metal layer 32 by, for example, ultrasonic bonding. - The
first end 14 a is provided inside theresin case 10. Thefirst end 14 a is surrounded by the sealingresin 50. - The
second end 14 b is provided outside theresin case 10 and thelid 12. A firstwiring connection hole 14 c for connecting a wiring such as a bus bar is provided in thesecond end 14 b. - The first
main terminal 14 corresponds to the power terminal N inFIG. 4 . For example, a negative voltage is applied to the first main terminal 14 from the outside. - The first
main terminal 14 is formed of a metal plate. The firstmain terminal 14 is made of, for example, copper. - The second
main terminal 16 has athird end 16 a, afourth end 16 b, and a secondwiring connection hole 16 c (hole). The secondmain terminal 16 is electrically fixed to thesecond metal layer 34. - The
third end 16 a is electrically connected to thesecond metal layer 34. Thethird end 16 a is fixed to thesecond metal layer 34. Thethird end 16 a is bonded to thesecond metal layer 34 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated). Thethird end 16 a is bonded to thesecond metal layer 34 by, for example, ultrasonic bonding. - The
third end 16 a is provided inside theresin case 10. Thethird end 16 a is surrounded by the sealingresin 50. - The
fourth end 16 b is provided outside theresin case 10 and thelid 12. A secondwiring connection hole 16 c for connecting a wiring such as a bus bar is provided to thefourth end 16 b. - The second
main terminal 16 corresponds to the power terminal P inFIG. 4 . For example, a positive voltage is applied to the second main terminal 16 from the outside. - The second
main terminal 16 is formed of a metal plate. The secondmain terminal 16 is made of, for example, copper. - The
AC output terminal 18 is electrically connected to thethird metal layer 36. One end of theAC output terminal 18 is fixed to, for example, thethird metal layer 36. TheAC output terminal 18 corresponds to the AC output terminal AC inFIG. 4 . TheAC output terminal 18 outputs the output current of the half bridge circuit. - The
first gate terminal 20 is electrically connected to thegate electrode 44 c of thefirst MOSFET 44 via thebonding wire 48, the firstgate metal layer 38, and thebonding wire 48. Thefirst gate terminal 20 has a function of applying a gate voltage signal for controlling thefirst MOSFET 44 to thegate electrode 44 c. - The
second gate terminal 22 is electrically connected to thegate electrode 46 c of thesecond MOSFET 46 via thebonding wire 48, the secondgate metal layer 40, and thebonding wire 48. Thesecond gate terminal 22 has a function of applying a gate voltage signal for controlling thesecond MOSFET 46 to thegate electrode 46 c. - The
first detection terminal 24 is electrically connected to the firstmain terminal 14. Thefirst detection terminal 24 is fixed between thefirst end 14 a and thesecond end 14 b of the firstmain terminal 14. Thefirst detection terminal 24 has anend 24 a. Theend 24 a of thefirst detection terminal 24 is fixed to the firstmain terminal 14 at the connection portion (X inFIGS. 1 and 3A ). - The end of the
first detection terminal 24 opposite to theend 24 a is provided, for example, outside theresin case 10 and thelid 12. The connection portion X between thefirst detection terminal 24 and the firstmain terminal 14 is located between the insulatingsubstrate 30 and thelid 12. - At least a portion of the
first detection terminal 24 is surrounded by the sealingresin 50. The connection portion X between thefirst detection terminal 24 and the firstmain terminal 14 is surrounded by the sealingresin 50. - The
first detection terminal 24 corresponds to the first detection terminal S1 inFIG. 4 . Thefirst detection terminal 24 has a function of monitoring a main current flowing between the firstmain terminal 14 and the secondmain terminal 16. - The
first detection terminal 24 is made of a metal. Thefirst detection terminal 24 is made of, for example, copper. - The
first detection terminal 24 is integrally formed of, for example, the same material as the firstmain terminal 14. - The
first detection terminal 24 can be connected to the firstmain terminal 14 by using, for example, a bonding wire. - The
second detection terminal 26 is electrically connected to thefirst metal layer 32. Thesecond detection terminal 26 has anend 26 a. Theend 26 a of thesecond detection terminal 26 is fixed to, for example, thefirst metal layer 32. - The
end 26 a of thesecond detection terminal 26 is bonded to thefirst metal layer 32 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated). In addition, theend 26 a is bonded to thefirst metal layer 32 by, for example, ultrasonic bonding. - The end of the
second detection terminal 26 opposite to theend 26 a is provided, for example, outside theresin case 10 and thelid 12. - In addition, the
second detection terminal 26 may not be directly fixed to thefirst metal layer 32 as long as thesecond detection terminal 26 is electrically connected to thefirst metal layer 32. For example, thesecond detection terminal 26 and thefirst metal layer 32 may be electrically connected via thebonding wire 48. In addition, for example, thesecond detection terminal 26 and thefirst metal layer 32 may be electrically connected to each other with a metal layer different from thefirst metal layer 32 interposed between thesecond detection terminal 26 and thefirst metal layer 32. - At least a portion of the
second detection terminal 26 is surrounded by the sealingresin 50. - The
second detection terminal 26 corresponds to the second detection terminal S2 inFIG. 4 . Thesecond detection terminal 26 has a function of monitoring a main current flowing between the firstmain terminal 14 and the secondmain terminal 16. - The
second detection terminal 26 is made of a metal. Thesecond detection terminal 26 is made of, for example, copper. - Next, the function and effect of the
power semiconductor module 100 according to the first embodiment will be described. - In the power semiconductor module, there are cases where it a short circuit in the module is required to be detected or the life prediction of the module is required to be performed. A detection terminal for measuring a main current flowing between the two main terminals is provided for detecting a short circuit in the module and performing the life prediction of the module. The two detection terminals are provided in the main current path, and the main current is obtained by integrating the voltage detected between the two detection terminals.
- In order to improve the measurement accuracy of the main current, an inductance of a certain magnitude or more is required for the main current path between the two detection terminals. For example, a case where the first detection terminal S1 and the second detection terminal S2 are provided on the power terminal N side as illustrated in
FIG. 4 is considered. The inductor L1 having an inductance of a certain magnitude or more is required for the main path between the first detection terminal S1 and the second detection terminal S2. - In order to increase the inductance of the main current path between the two detection terminals, for example, the length of the metal layer on the insulating substrate is required to be increased, an additional metal layer is required to be provided, or the length of the bonding wire is required to be increased, or an additional bonding wires is required to be provided. For this reason, there is a problem that the size of the power semiconductor module becomes large.
- In the
power semiconductor module 100 according to the first embodiment, thefirst detection terminal 24 is connected between thefirst end 14 a and thesecond end 14 b of the firstmain terminal 14. Therefore, the main current path from the connection portion X to the connection portion between thesecond detection terminal 26 and thefirst metal layer 32 functions as the inductor L1 inFIG. 4 . - In the
power semiconductor module 100 according to the first embodiment, a portion of the firstmain terminal 14 can be allowed to function as the inductor L1. Therefore, in order to increase the inductance of the main current path between the two detection terminals, for example, the length of the metal layer on the insulating substrate is not required to be increased, an additional metal layer is not required to be provided, the length of the bonding wire is not required to be increased, or an additional bonding wire is not required to be provided. That is, in order to increase the inductance of the main current path between the two detection terminals, an additional structure is not required to be added. Therefore, even in a case where thefirst detection terminal 24 and thesecond detection terminal 26 are provided, the miniaturization of thepower semiconductor module 100 can be realized. - From the viewpoint of increasing the measurement accuracy of the main current, the inductance between the
first detection terminal 24 and thesecond detection terminal 26 is preferably 2 nH or more. - In the
power semiconductor module 100 according to the first embodiment, the position of the connection portion X between thefirst detection terminal 24 and the firstmain terminal 14 can be set arbitrarily. Therefore, adjustment of the magnitude of the inductance of the main current path is facilitated. - In addition, when the temperature change between the main current paths between the two detection terminals is large, the change in inductance between the two detection terminals becomes large. When the change in inductance becomes large, the measurement accuracy of the main current decreases.
- In the
power semiconductor module 100 according to the first embodiment, the connection portion X between thefirst detection terminal 24 and the firstmain terminal 14 is provided at a position apart from the heat source. A heat generation is likely to occur at thesecond end 14 b due to contact resistance of a wire such as a bus bar connected to thesecond end 14 b. A certain distance from thesecond end 14 b where heat generation is likely to occur to the connection portion X is maintained. In addition, a certain distance from thefirst MOSFET 44 and thesecond MOSFET 46, which generate heat due to device operation, to the connection portion X is maintained. The certain distances necessary to avoid temperature increase of the connection portion X can be maintained. Therefore, the change in inductance due to the temperature change is suppressed. Therefore, the decrease in the measurement accuracy of the main current is suppressed. - As described above, according to the first embodiment, the miniaturization of the power semiconductor module can be realized. In addition, adjustment of the inductance between the two detection terminals is facilitated. In addition, the decrease in the measurement accuracy of the main current due to the temperature change is suppressed.
- A semiconductor device according to a second embodiment includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the third end and the fourth end of the second main terminal; and a second detection terminal being electrically connected to the second metal layer.
- The semiconductor device of the second embodiment is different from the semiconductor device according to the first embodiment in that the semiconductor device of the second embodiment includes the first detection terminal fixed between the third end and the fourth end of the second main terminal and the second detection terminal electrically connected to the second metal layer. That is, the semiconductor device of the second embodiment is different from the first embodiment in that the first detection terminal is provided to the second main terminal. Hereinafter, a portion of the contents overlapping with those of the first embodiment will be omitted in description.
-
FIG. 5 is a schematic top view of the semiconductor device according to the second embodiment.FIG. 5 is a diagram corresponding toFIG. 1 of the first embodiment.FIG. 6 is an equivalent circuit diagram of the semiconductor device according to the second embodiment. - The semiconductor device of the second embodiment is a
power semiconductor module 200. As illustrated inFIG. 6 , in thepower semiconductor module 200 according to the second embodiment, two MOSFETs are connected in series. The power semiconductor module according to the second embodiment is a so-called “2 in 1” type module in which a half bridge circuit can be configured with one module. For example, a three-phase inverter circuit can be configured by using three power semiconductor modules according to the second embodiment. - As illustrated in
FIG. 6 , thepower semiconductor module 200 has a power terminal N, a power terminal P, an AC output terminal AC, a first detection terminal S1, a second detection terminal S2, and an inductor L1. The first detection terminal S1 and the second detection terminal S2 have a function of monitoring a main current flowing between the power terminal N and the power terminal P. - The
power semiconductor module 200 according to the second embodiment includes aresin case 10, alid 12, a firstmain terminal 14, a secondmain terminal 16, anAC output terminal 18, afirst gate terminal 20, asecond gate terminal 22, afirst detection terminal 24, asecond detection terminal 26, ametal base 28, an insulatingsubstrate 30, afirst metal layer 32, asecond metal layer 34, athird metal layer 36, a firstgate metal layer 38, a secondgate metal layer 40, a back-surface metal layer 42, a first MOSFET 44 (semiconductor chip), asecond MOSFET 46, abonding wire 48, and a sealing resin 50 (sealing material). - The first
main terminal 14 has afirst end 14 a, asecond end 14 b, and a firstwiring connection hole 14 c (hole). The secondmain terminal 16 has athird end 16 a, afourth end 16 b, and a secondwiring connection hole 16 c. Thefirst detection terminal 24 has anend 24 a. Thesecond detection terminal 26 has anend 26 a. -
FIG. 5 is a top view of thepower semiconductor module 200 from which thelid 12 and the sealingresin 50 are removed. - The first
main terminal 14 has afirst end 14 a, asecond end 14 b, and a firstwiring connection hole 14 c (hole). The firstmain terminal 14 is electrically connected to thefirst metal layer 32. - The first
main terminal 14 corresponds to the power terminal N inFIG. 6 . For example, a negative voltage is applied to the first main terminal 14 from the outside. - The second
main terminal 16 has athird end 16 a, afourth end 16 b, and a secondwiring connection hole 16 c (hole). The secondmain terminal 16 is electrically fixed to thesecond metal layer 34. - The second
main terminal 16 corresponds to the power terminal P inFIG. 6 . For example, a positive voltage is applied to the second main terminal 16 from the outside. - The
first detection terminal 24 is electrically connected to the secondmain terminal 16. Thefirst detection terminal 24 is fixed between thethird end 16 a and thefourth end 16 b of the secondmain terminal 16. Thefirst detection terminal 24 has anend 24 a. Theend 24 a of thefirst detection terminal 24 is fixed to the secondmain terminal 16 at the connection portion (Y inFIG. 5 ). - The end of the
first detection terminal 24 opposite to theend 24 a is provided, for example, outside theresin case 10 and thelid 12. The connection portion Y between thefirst detection terminal 24 and the secondmain terminal 16 is located between the insulatingsubstrate 30 and thelid 12. - At least a portion of the
first detection terminal 24 is surrounded by the sealingresin 50. The connection portion Y between thefirst detection terminal 24 and the secondmain terminal 16 is surrounded by the sealingresin 50. - The
first detection terminal 24 corresponds to the first detection terminal S1 inFIG. 6 . Thefirst detection terminal 24 has a function of monitoring a main current flowing between the firstmain terminal 14 and the secondmain terminal 16. - The
first detection terminal 24 is made of a metal. Thefirst detection terminal 24 is made of, for example, copper. - The
first detection terminal 24 is integrally formed of, for example, the same material as the secondmain terminal 16. - The
first detection terminal 24 can be connected to the secondmain terminal 16 by using, for example, a bonding wire. - The
second detection terminal 26 is electrically connected to thesecond metal layer 34. Thesecond detection terminal 26 has anend 26 a. Theend 26 a of thesecond detection terminal 26 is fixed to, for example, thesecond metal layer 34. - The
end 26 a of thesecond detection terminal 26 is bonded to thesecond metal layer 34 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated). Theend 26 a is bonded by, for example, ultrasonic bonding. - The end of the
second detection terminal 26 opposite to theend 26 a is provided, for example, outside theresin case 10 and thelid 12. - The
second detection terminal 26 may not be directly fixed to thesecond metal layer 34 as long as thesecond detection terminal 26 is electrically connected to thesecond metal layer 34. For example, thesecond detection terminal 26 and thesecond metal layer 34 may be electrically connected via thebonding wire 48. In addition, for example, thesecond detection terminal 26 and thesecond metal layer 34 may be electrically connected each other with a metal layer different from thesecond metal layer 34 interposed between thesecond detection terminal 26 and thesecond metal layer 34. - At least a portion of the
second detection terminal 26 is surrounded by the sealingresin 50. - The
second detection terminal 26 corresponds to the second detection terminal S2 inFIG. 6 . Thesecond detection terminal 26 has a function of monitoring a main current flowing between the firstmain terminal 14 and the secondmain terminal 16. - The
second detection terminal 26 is made of a metal. Thesecond detection terminal 26 is made of, for example, copper. - As described above, according to the second embodiment, similarly to the first embodiment, it is possible to realize the miniaturization of the power semiconductor module. In addition, adjustment of the inductance between the two detection terminals is facilitated. In addition, the decrease in the measurement accuracy of the main current due to the temperature change is suppressed.
- A semiconductor device according to a third embodiment is different from the semiconductor device according to the first embodiment in that a sealing material has a first portion and a second portion made of a material different from that of the first portion, and a connection portion between the first main terminal and the first detection terminal is surrounded by the second portion. Hereinafter, a portion of the contents overlapping with those of the first embodiment will be omitted in description.
-
FIG. 7 is a schematic cross-sectional view of the semiconductor device according to the third embodiment.FIG. 7 is a diagram corresponding toFIG. 2 of the first embodiment.FIGS. 8A and 8B are schematic cross-sectional views of the semiconductor device according to the third embodiment.FIGS. 8A and 8B are diagrams corresponding toFIGS. 3A and 3B of the first embodiment. - The semiconductor device of the third embodiment is a
power semiconductor module 300. - The
power semiconductor module 300 according to the third embodiment includes aresin case 10, alid 12, a firstmain terminal 14, a secondmain terminal 16, anAC output terminal 18, afirst gate terminal 20, asecond gate terminal 22, afirst detection terminal 24, asecond detection terminal 26, ametal base 28, an insulatingsubstrate 30, afirst metal layer 32, asecond metal layer 34, athird metal layer 36, a firstgate metal layer 38, a secondgate metal layer 40, a back-surface metal layer 42, a first MOSFET 44 (semiconductor chip), asecond MOSFET 46, abonding wire 48, and a sealing resin 50 (sealing material). - The first
main terminal 14 has afirst end 14 a, asecond end 14 b, and a firstwiring connection hole 14 c (hole). The secondmain terminal 16 has athird end 16 a, afourth end 16 b, and a secondwiring connection hole 16 c. Thefirst detection terminal 24 has anend 24 a. Thesecond detection terminal 26 has anend 26 a. - The sealing
resin 50 has afirst portion 50 a and asecond portion 50 b. The material of thesecond portion 50 b is different from the material of thefirst portion 50 a. - For example, the
second portion 50 b is made by using a material having higher insulation properties than thefirst portion 50 a. In addition, for example, thesecond portion 50 b is made by using a material having higher strength than thefirst portion 50 a. - The
first portion 50 a is made of, for example, a silicone gel. Thesecond portion 50 b is made of, for example, an epoxy resin. - At least a portion of the first
main terminal 14 and the secondmain terminal 16 is surrounded by thesecond portion 50 b. The connection portion X between thefirst detection terminal 24 and the firstmain terminal 14 is surrounded by thesecond portion 50 b. - According to the
power semiconductor module 300 according to the third embodiment, it is possible to improve the insulation properties of, for example, the firstmain terminal 14 and the secondmain terminal 16. In addition, for example, it is possible to suppress the deformation of the firstmain terminal 14 and the secondmain terminal 16. - As described above, according to the third embodiment, similarly to the first embodiment, it is possible to realize the miniaturization of the power semiconductor module. In addition, adjustment of the inductance between the two detection terminals is facilitated. In addition, the decrease in the measurement accuracy of the main current due to the temperature change is suppressed. In addition, it is possible to further improve the characteristics of the power semiconductor module.
- A semiconductor device according to a fourth embodiment is different from the semiconductor device according to the first embodiment in that the semiconductor device according to the fourth embodiment further includes a third detection terminal electrically connected between the third end and the fourth end of the second main terminal and a fourth detection terminal electrically connected to the second metal layer. Hereinafter, a portion of the contents overlapping with those of the first embodiment will be omitted in description.
-
FIG. 9 is a schematic top view of the semiconductor device according to the fourth embodiment.FIG. 9 is a diagram corresponding toFIG. 1 of the first embodiment.FIG. 10 is an equivalent circuit diagram of the semiconductor device according to the fourth embodiment. - The semiconductor device of the fourth embodiment is a
power semiconductor module 400. As illustrated inFIG. 10 , in thepower semiconductor module 400 according to the fourth embodiment, two MOSFETs are connected in series. The power semiconductor module according to the fourth embodiment is a so-called “2 in 1” type module in which a half bridge circuit can be configured with one module. For example, a three-phase inverter circuit can be configured by using three power semiconductor modules according to the fourth embodiment. - As illustrated in
FIG. 10 , thepower semiconductor module 100 includes a power terminal N, a power terminal P, an AC output terminal AC, a first detection terminal S1, a second detection terminal S2, a third detection terminal S3, a fourth detection terminal S4, an inductor L1, and an inductor L2. The first detection terminal S1 and the second detection terminal S2, and the third detection terminal S3 and the fourth detection terminal S4 respectively have a function of monitoring a main current flowing between the power terminal N and the power terminal P. - The
power semiconductor module 400 according to the fourth embodiment includes aresin case 10, alid 12, a firstmain terminal 14, a secondmain terminal 16, anAC output terminal 18, afirst gate terminal 20, asecond gate terminal 22, afirst detection terminal 24, asecond detection terminal 26, ametal base 28, an insulatingsubstrate 30, afirst metal layer 32, asecond metal layer 34, athird metal layer 36, a firstgate metal layer 38, a secondgate metal layer 40, a back-surface metal layer 42, a first MOSFET 44 (semiconductor chip), asecond MOSFET 46, abonding wire 48, a sealing resin 50 (sealing material), athird detection terminal 54, and afourth detection terminal 56. - The first
main terminal 14 has afirst end 14 a, asecond end 14 b, and a firstwiring connection hole 14 c (hole). The secondmain terminal 16 has athird end 16 a, afourth end 16 b, and a secondwiring connection hole 16 c. Thefirst detection terminal 24 has anend 24 a. Thesecond detection terminal 26 has anend 26 a. Thethird detection terminal 54 has anend 54 a. Thefourth detection terminal 56 has anend 56 a. -
FIG. 9 is a top view of thepower semiconductor module 400 from which thelid 12 and the sealingresin 50 are removed. - The first
main terminal 14 has afirst end 14 a, asecond end 14 b, and a firstwiring connection hole 14 c (hole). The firstmain terminal 14 is electrically connected to thefirst metal layer 32. - The first
main terminal 14 corresponds to the power terminal N inFIG. 10 . For example, a negative voltage is applied to the first main terminal 14 from the outside. - The second
main terminal 16 has athird end 16 a, afourth end 16 b, and a secondwiring connection hole 16 c (hole). The secondmain terminal 16 is electrically fixed to thesecond metal layer 34. - The second
main terminal 16 corresponds to the power terminal P inFIG. 10 . For example, a positive voltage is applied to the second main terminal 16 from the outside. - The
first detection terminal 24 is electrically connected to the firstmain terminal 14. Thefirst detection terminal 24 is fixed between thefirst end 14 a and thesecond end 14 b of the firstmain terminal 14. Thefirst detection terminal 24 has anend 24 a. Theend 24 a of thefirst detection terminal 24 is fixed to the firstmain terminal 14 at the connection portion (X inFIG. 9 ). - The end of the
first detection terminal 24 opposite to theend 24 a is provided, for example, outside theresin case 10 and thelid 12. The connection portion X between thefirst detection terminal 24 and the firstmain terminal 14 is located between the insulatingsubstrate 30 and thelid 12. - At least a portion of the
first detection terminal 24 is surrounded by the sealingresin 50. The connection portion X between thefirst detection terminal 24 and the firstmain terminal 14 is surrounded by the sealingresin 50. - The
first detection terminal 24 corresponds to the first detection terminal S1 inFIG. 10 . Thefirst detection terminal 24 has a function of monitoring a main current flowing between the firstmain terminal 14 and the secondmain terminal 16. - The
first detection terminal 24 is made of a metal. Thefirst detection terminal 24 is made of, for example, copper. - The
first detection terminal 24 is integrally formed of, for example, the same material as the firstmain terminal 14. - The
first detection terminal 24 can be connected to the firstmain terminal 14 by using, for example, a bonding wire. - The
second detection terminal 26 is electrically connected to thefirst metal layer 32. Thesecond detection terminal 26 has anend 26 a. Theend 26 a of thesecond detection terminal 26 is fixed to, for example, thefirst metal layer 32. - The
end 26 a of thesecond detection terminal 26 is bonded to thefirst metal layer 32 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated). In addition, theend 26 a is bonded to thefirst metal layer 32 by, for example, ultrasonic bonding. - The end of the
second detection terminal 26 opposite to theend 26 a is provided, for example, outside theresin case 10 and thelid 12. - In addition, the
second detection terminal 26 may not be directly fixed to thefirst metal layer 32 as long as thesecond detection terminal 26 is electrically connected to thefirst metal layer 32. For example, thesecond detection terminal 26 and thefirst metal layer 32 may be electrically connected via thebonding wire 48. In addition, for example, thesecond detection terminal 26 and thefirst metal layer 32 may be electrically connected to each other with a metal layer different from thefirst metal layer 32 interposed between thesecond detection terminal 26 and thefirst metal layer 32. - At least a portion of the
second detection terminal 26 is surrounded by the sealingresin 50. - The
second detection terminal 26 corresponds to the second detection terminal S2 inFIG. 10 . Thesecond detection terminal 26 has a function of monitoring a main current flowing between the firstmain terminal 14 and the secondmain terminal 16. - The
second detection terminal 26 is made of a metal. Thesecond detection terminal 26 is made of, for example, copper. - The
third detection terminal 54 is electrically connected to the secondmain terminal 16. Thethird detection terminal 54 is fixed between thethird end 16 a and thefourth end 16 b of the secondmain terminal 16. Thethird detection terminal 54 has anend 54 a. Theend 54 a of thethird detection terminal 54 is fixed to the secondmain terminal 16 at the connection portion (Z inFIG. 9 ). - The end of the
third detection terminal 54 opposite to theend 54 a is provided, for example, outside theresin case 10 and thelid 12. The connection portion Z between thethird detection terminal 54 and the secondmain terminal 16 is located between the insulatingsubstrate 30 and thelid 12. - At least a portion of the
third detection terminal 54 is surrounded by the sealingresin 50. The connection portion Z between thethird detection terminal 54 and the secondmain terminal 16 is surrounded by the sealingresin 50. - The
third detection terminal 54 corresponds to the third detection terminal S3 inFIG. 10 . Thethird detection terminal 54 has a function of monitoring a main current flowing between the firstmain terminal 14 and the secondmain terminal 16. - The
third detection terminal 54 is made of a metal. Thethird detection terminal 54 is made of, for example, copper. - The
third detection terminal 54 is integrally formed of, for example, the same material as the secondmain terminal 16. - The
third detection terminal 54 can be connected to the secondmain terminal 16 by using, for example, a bonding wire. - The
fourth detection terminal 56 is electrically connected to thesecond metal layer 34. Thefourth detection terminal 56 has anend 56 a. Theend 56 a of thefourth detection terminal 56 is fixed to, for example, thesecond metal layer 34. - The
end 56 a of thefourth detection terminal 56 is bonded to thesecond metal layer 34 by using, for example, a solder layer or a silver nanoparticle layer (not illustrated). Theend 56 a is bonded by, for example, ultrasonic bonding. - The end of the
fourth detection terminal 56 opposite to theend 56 a is provided, for example, outside theresin case 10 and thelid 12. - In addition, the
fourth detection terminal 56 may not be directly fixed to thesecond metal layer 34 as long as thefourth detection terminal 56 is electrically connected to thesecond metal layer 34. For example, thefourth detection terminal 56 and thesecond metal layer 34 may be electrically connected via thebonding wire 48. In addition, for example, thefourth detection terminal 56 and thesecond metal layer 34 may be electrically connected to each other with a metal layer different from thesecond metal layer 34 interposed between thefourth detection terminal 56 and thesecond metal layer 34. - At least a portion of the
fourth detection terminal 56 is surrounded by the sealingresin 50. - The
fourth detection terminal 56 corresponds to the fourth detection terminal S4 inFIG. 10 . Thefourth detection terminal 56 has a function of monitoring a main current flowing between the firstmain terminal 14 and the secondmain terminal 16. - The
fourth detection terminal 56 is made of a metal. Thefourth detection terminal 56 is made of, for example, copper. - The
power semiconductor module 400 according to the fourth embodiment can monitor the main currents on both the firstmain terminal 14 side and the secondmain terminal 16 side. Therefore, for example, in a case where a short circuit occurs, the location of the short circuit can be easily identified. In addition, for example, the life prediction accuracy of thepower semiconductor module 400 is improved. - As described above, according to the fourth embodiment, similarly to the first embodiment, it is possible to realize the miniaturization of the power semiconductor module. In addition, adjustment of the inductance between the two detection terminals is facilitated. In addition, the decrease in the measurement accuracy of the main current due to the temperature change is suppressed. In addition, the location of the short circuit can be easily identified. In addition, the life prediction accuracy of the module is improved.
- In the first to fourth embodiments, the case where the MOSFET is used as the semiconductor chip has been described as an example, but the semiconductor chip is not limited to these. For example, other transistors or diodes such as IGBT, Schottky barrier diode (SBD), and PIN diode can be employed. In addition, a combination of transistors and diodes can be employed.
- In the first to fourth embodiments, the case where the number of semiconductor chips is two has been described as an example, but the number of semiconductor chips may be one or three or more.
- While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, semiconductor devices described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the devices and methods described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
Claims (15)
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JP7286582B2 (en) * | 2020-03-24 | 2023-06-05 | 株式会社東芝 | semiconductor equipment |
JP2023134878A (en) * | 2022-03-15 | 2023-09-28 | 株式会社東芝 | Semiconductor device and method for manufacturing semiconductor device |
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CN113451273A (en) | 2021-09-28 |
CN113451273B (en) | 2024-07-09 |
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JP2021153094A (en) | 2021-09-30 |
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