US20210125946A1 - Electronic device package and method for manufacturing the same - Google Patents
Electronic device package and method for manufacturing the same Download PDFInfo
- Publication number
- US20210125946A1 US20210125946A1 US16/663,082 US201916663082A US2021125946A1 US 20210125946 A1 US20210125946 A1 US 20210125946A1 US 201916663082 A US201916663082 A US 201916663082A US 2021125946 A1 US2021125946 A1 US 2021125946A1
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- US
- United States
- Prior art keywords
- rdl
- electronic device
- device package
- substrate
- conductive substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 120
- 238000005538 encapsulation Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000009194 climbing Effects 0.000 claims 3
- 239000000463 material Substances 0.000 description 13
- 239000010949 copper Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 230000009969 flowable effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present disclosure relates to an electronic device package including a stack of electronic components.
- a stacking electronic device package includes two or more electronic components stacked on each other.
- the stacked electronic components are electrically connected to each other through conductive structures such as solder bumps, and an underfill is normally formed to ensure the joint between the stacked electronic components.
- the underfill may creep up edges of the electronic component, making it difficult to remove the carrier for temporarily supporting the electronic component.
- an electronic device package includes a redistribution layer and a conductive substrate.
- the RDL includes a first surface.
- the conductive substrate is disposed on the first surface and electrically connected to the RDL.
- a circuit density of the RDL is higher than a circuit density of the conductive substrate, and an edge of the RDL laterally protrudes out from a respective edge of the conductive substrate.
- an electronic device package includes a fan-out circuit layer, a substrate and a semiconductor die.
- the fan-out circuit layer includes a first surface and a second surface opposite to the first surface.
- the substrate is adjacent to the first surface of the fan-out circuit layer, and electrically connected to the fan-out circuit layer.
- the semiconductor die is adjacent to the second surface of the fan-out circuit layer, and electrically connected to the fan-out circuit layer.
- An area of the fan-out circuit layer is larger than that of the substrate and that that of the semiconductor die.
- a method of manufacturing an electronic device package includes following operations.
- a mother substrate is provided.
- a first singulation is performed to divide the mother substrate into a plurality of substrates. At least some of the plurality of substrates are mounted on a redistribution substrate.
- a second singulation is performed to divide the redistribution substrate into a plurality of redistribution layers (RDLs) subsequent to the at least some of the plurality of substrates are mounted on the redistribution substrate.
- RDLs redistribution layers
- FIG. 1 is a cross-sectional view of an electronic device package in accordance with some embodiments of the present disclosure.
- FIG. 2 is a cross-sectional view of an electronic device package in accordance with some embodiments of the present disclosure.
- FIG. 3A , FIG. 3B , FIG. 3C , FIG. 3D and FIG. 3E illustrate operations of manufacturing an electronic device package in accordance with some embodiments of the present disclosure.
- first and second features are formed or disposed in direct contact
- additional features are formed or disposed between the first and second features, such that the first and second features are not in direct contact
- present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- spatially relative terms such as “beneath,” “below,” “above,” “over,” “on,” “upper,” “lower,” “left,” “right,” “vertical,” “horizontal,” “side” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures.
- the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
- the device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. It should be understood that when an element is referred to as being “connected to” or “coupled to” another element, it may be directly connected to or coupled to the other element, or intervening elements may be present.
- present disclosure provides a stacking electronic device package includes a RDL circuit layer and a conductive substrate stacked on each other.
- the RDL circuit layer has relatively higher circuit density and larger area than the conductive substrate. This configuration prevents the vulnerable high density RDL circuit layer from being damaged in a de-carrier operation by an underfill, and thus the yield and reliability of the electronic device package can be improved.
- FIG. 1 is a cross-sectional view of an electronic device package 1 in accordance with some embodiments of the present disclosure.
- the electronic device package 1 includes a redistribution layer (RDL) 10 and a conductive substrate 20 stacked on the RDL 10 .
- the RDL 10 includes a first surface (e.g., a lower surface) 101 , and a second surface (e.g., an upper surface) 102 opposite to the first surface 101 .
- the conductive substrate (also referred to as a substrate) 20 is adjacent to or disposed on the first surface 101 and electrically connected to the RDL 10 .
- the conductive substrate 20 includes a third surface 201 facing the first surface 101 of the RDL 10 , and a fourth surface 202 opposite to the third surface 201 .
- the RDL 10 and the conductive substrate 20 both include circuit layers at least partially embedded therein.
- the circuit density of the RDL 10 is higher than the circuit density of the conductive substrate 10 .
- the line width/spacing (L/S) of the RDL 10 is narrower than the L/S of the conductive substrate 20 .
- the RDL 10 may include a bumping-level circuit layer.
- the L/S of the RDL 10 may be, but is not limited to be, between about 2 ⁇ m/about 2 ⁇ m and about 10 pin/about 10
- the bumping-level circuit layer may be patterned and defined by e.g., photolithography-plating-etching technique.
- the conductive substrate 20 may include a substrate-level circuit layer.
- the L/S of the conductive substrate 20 may be, but is not limited to be, larger than about 10 pin/about 10 ⁇ m.
- the substrate-level circuit layer may be patterned and defined by e.g., laser drill-plating-etching techniques.
- the RDL 10 is thinner than and more fragile than the conductive substrate 10 .
- An area of the RDL 10 is larger than an area of the conductive substrate 10 , and thus at least an edge 10 E of the RDL 10 laterally protrudes out from a respective edge 20 E of the conductive substrate 10 .
- the RDL 10 and the conductive substrate 20 are polygonal shape such as rectangular shape, and two, three or all edges 10 E of the RDL 10 laterally protrude out from respective edges 20 E of the conductive substrate 10 .
- the RDL 10 may include one or more insulative layers 12 , and one or more conductive wiring layers 14 stacked on one another.
- the material of the insulative layer(s) 12 may include organic insulative material such as epoxy resin, bismaleimide-triazine (BT) resin, inorganic insulative material such as silicon oxide, silicon nitride, or a combination thereof.
- the material of the conductive wiring(s) 14 may include metal such as copper (Cu) or the like.
- the conductive wirings 14 may include first electrical terminals 14 A such as bonding pads exposed from the first surface 101 to connect the conductive substrate 10 , and second electrical terminals 14 B such as bonding pads exposed from the second surface 102 to connect to another electronic component such as a semiconductor die.
- the conductive substrate 20 may be a core substrate or a core-less substrate.
- the conductive substrate 20 may include one or more insulative layers 22 , and one or more conductive wiring layers 24 stacked on one another.
- the material of the insulative layer(s) 22 may include organic insulative material such as epoxy resin, bismaleimide-triazine (BT) resin, inorganic insulative material such as silicon oxide, silicon nitride, or a combination thereof.
- the material of the conductive wiring(s) 24 may include metal such as copper (Cu) or the like.
- the conductive wirings 24 may include first electrical terminals 24 A such as bonding pads exposed from the third surface 201 to connect the conductive substrate 10 , and second electrical terminals 24 B such as bonding pads exposed from the fourth surface 202 to connect an external electronic component such as a printed circuit board (PCB).
- first electrical terminals 24 A such as bonding pads exposed from the third surface 201 to connect the conductive substrate 10
- second electrical terminals 24 B such as bonding pads exposed from the fourth surface 202 to connect an external electronic component such as a printed circuit board (PCB).
- PCB printed circuit board
- the electronic device package 1 may further include a plurality of first conductive structures 16 disposed between and electrically connected to the RDL 10 and the conductive substrate 20 .
- the first conductive structures 16 may include conductive pillars such as copper pillars, conductive bumps such as solder bumps or the like, and electrically connected to the RDL 10 through the first electrical terminals 14 A and electrically connected to the conductive substrate 20 through the first electrical terminals 24 A.
- the electronic device package 1 may further include a first underfill 26 disposed between the RDL 10 and the conductive substrate 20 .
- the first underfill 26 may be in contact with the RDL 10 and/or the conductive substrate 20 .
- the material of the first underfill 26 may include a flow-able insulative material such as epoxy resin.
- the flow-able first underfill 26 may climb up the edge 20 E of the conductive substrate 20 .
- the first underfill 26 partially climbs up the edge 20 E of the conductive substrate 20 , and a portion of the edge 20 E is not covered by the first underfill 26 .
- the electronic device package 1 may further include a first encapsulation layer 28 disposed on the first surface 101 of the RDL 10 and encapsulating the conductive substrate 20 .
- the first encapsulation layer 28 may include molding compounds such epoxy resin, and fillers such as silicon oxide fillers may be filled in the molding compound.
- the first encapsulation layer 28 may encapsulate the first underfill 26 and the portion of the edge 20 E of the conductive substrate 20 exposed from the first underfill 26 .
- the first encapsulation layer 28 may expose the fourth surface 202 of the conductive substrate 20 .
- the first underfill 26 may be omitted, and the first encapsulation layer 28 may include a molding underfill (MUF) disposed between the RDL 10 and the conductive substrate 20 and encapsulating the conductive substrate 20 .
- the MUF may be in contact with the RDL 10 and/or the conductive substrate 20 .
- the electronic device package 1 may further include a plurality of electrical conductors 40 disposed on the fourth surface 202 of the conductive substrate 20 , and electrically connected to the second electrical terminals 24 B of the conductive substrate 20 .
- the electrical conductors 40 may include solder balls or solder bumps such as C4 bumps for connecting an external component such as a PCB.
- the electronic device package 1 may further include an electronic component 30 adjacent to or disposed on the second surface 102 of the RDL 10 and electrically connected to the RDL 10 .
- the electronic component 30 may include a semiconductor die with embedded circuit layer, and the circuit density of the electronic component 30 is higher than the circuit density of the RDL 10 .
- the circuit layer of the electronic component 30 may include a foundry-level circuit layer with a relatively narrower L/S.
- the L/S of the foundry-level circuit may be less than about 2 ⁇ m/about 2
- the foundry-level circuit layer may be patterned and defined by e.g., advanced photolithography-plating-etching techniques.
- the area of the electronic component 30 is smaller than the area of the RDL 10 , and several electronic components 30 may be disposed on the RDL 10 .
- the RDL 10 may be configured as a fan-out RDL or a fan-out circuit layer with respect to the electronic component 30 , in which a projected area of the first electrical terminals 14 A and the second electrical terminals 14 B may be greater than and exceeding a projected area of the electronic component 30 .
- the electronic component 30 may include a plurality of electrical terminals 32 such as bonding pads facing the RDL 10 and configured to electrically connect the RDL 10 .
- the electronic device package 1 may further include a plurality of second conductive structures 34 disposed between and electrically connected to the electronic component 30 and the RDL 10 .
- the second conductive structures 34 may include conductive pillars such as copper pillars, conductive bumps such as solder bumps or the like electrically connected to the electronic component 30 through the electrical terminals 32 , and electrically connected to the RDL 10 through the second electrical terminals 14 B.
- the electronic device package 1 may further include a second underfill 36 disposed between the electronic component 30 and the RDL 10 .
- the material of the second underfill 36 may include a flow-able insulative material such as epoxy resin. The flow-able second underfill 36 may partially or entirely climb up an edge 30 E of the electronic component 30 .
- the electronic device package 1 may further include a second encapsulation layer 38 disposed on the second surface 102 of the RDL 10 and encapsulating the electronic component 30 .
- the second encapsulation layer 38 may include molding compounds such epoxy resin, and fillers such as silicon oxide fillers may be filled in the molding compound.
- the second encapsulation layer 38 may encapsulate the second underfill 36 and the edge 30 E of the electronic component 30 .
- the second encapsulation layer 38 may further encapsulate the inactive surface of the electronic component 30 .
- the RDL 10 is relatively thinner than and more vulnerable than the conductive substrate 10 .
- the singulated RDL 10 is supported by a carrier.
- the underfill between the singulated RDL 10 and the conductive substrate 20 would climb up the edge of the RDL 10 and contact the carrier. The underfill would result in difficulties in a de-carrier operation in which the carrier is removed.
- the relatively rigid and thicker conductive substrate 20 is first singulated from a mother substrate and then bonded to a redistribution substrate including a plurality of non-singulated RDLs 10 .
- the rigid conductive substrate 20 after being singulated may not need a carrier to support, and no de-carrier operation is required.
- the RDLs 10 are not singulated before the first underfill 26 is formed, and thus the carrier for supporting the redistribution substrate is prevented from contacting the first underfill 26 . Accordingly, the yield and reliability of the electronic device package 1 can be improved.
- the electronic device packages and manufacturing methods of the present disclosure are not limited to the above-described embodiments, and may be implemented according to other embodiments. To streamline the description and for the convenience of comparison between various embodiments of the present disclosure, similar components the following embodiments are marked with same numerals, and may not be redundantly described.
- FIG. 2 is a cross-sectional view of an electronic device package 2 in accordance with some embodiments of the present disclosure. As shown in FIG. 2 , in contrast to the electronic device package 1 in FIG. 1 , the first underfill 26 entirely climbs up the edge 20 E of the conductive substrate 20 .
- FIG. 3A , FIG. 3B , FIG. 3C , FIG. 3D and FIG. 3E illustrate operations of manufacturing an electronic device package in accordance with some embodiments of the present disclosure.
- a mother substrate 10 M is provided.
- the mother substrate 10 M includes a plurality of pre-formed conductive substrates 20 .
- a plurality of first conductive structures 16 may be formed on the first electrical terminals 24 A of the conductive substrate 20 .
- a first singulation 52 is performed to divide the mother substrate 20 M into a plurality of substrates 20 .
- a redistribution substrate 10 M is provided.
- the redistribution substrate 10 M includes a plurality of preformed RDLs 10 .
- the redistribution substrate 10 M is supported by a carrier 60 , and a releasing layer 62 may be used to attach the redistribution substrate 10 M to the carrier 60 .
- At least some of the plurality of conductive substrates 20 are mounted on the redistribution substrate 10 M, and electrically connected to the RDLs 10 through the first conductive structures 16 .
- a first underfill 26 is formed between the conductive structures 20 and the redistribution substrate 10 M.
- the first underfill 26 may partially or entirely climb up the edge 20 E of the conductive substrate 20 . Since the redistribution substrate 10 M is not singulated when the first underfill 26 is formed, the carrier 60 is separated from first underfill 26 by the redistribution substrate 10 M.
- a first encapsulation layer 28 is formed to encapsulate the conductive substrates 20 .
- the carrier 60 is removed.
- a plurality of electronic components 30 are mounted on the other surface of the redistribution substrate 10 M opposite to the conductive substrates 20 through second conductive structures 34 .
- a second underfill 36 is formed between the redistribution substrate 10 M and the electronic components 30 .
- a second encapsulation layer 38 is formed to encapsulate the electronic components 30 .
- a second singulation 54 is performed to divide the redistribution substrate 10 M into a plurality of redistribution layers (RDLs) 10 subsequent to the conductive substrates 20 are mounted on the redistribution substrate 10 M to form the electronic device package as illustrated in FIG. 1 or FIG. 2 . Subsequent to the second singulation, the edge 10 E of the each RDL 10 laterally protrudes out from a respective edge 20 E of the conductive substrate 20 .
- RDLs redistribution layers
- the electronic device package includes a RDL circuit layer and a conductive substrate stacked on each other.
- the RDL circuit layer has relatively higher circuit density and larger area than the conductive substrate. This configuration prevents the vulnerable high density RDL circuit layer from being damaged in a de-carrier operation by an underfill, and thus the yield and reliability of the electronic device package can be improved.
- the terms “approximately,” “substantially,” “substantial” and “about” are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation.
- the terms can refer to a range of variation of less than or equal to ⁇ 10% of that numerical value, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1%, less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1%, or less than or equal to ⁇ 0.05%.
- two numerical values can be deemed to be “substantially” the same or equal if the difference between the values is less than or equal to ⁇ 10% of an average of the values, such as less than or equal to ⁇ 5%, less than or equal to ⁇ 4%, less than or equal to ⁇ 3%, less than or equal to ⁇ 2%, less than or equal to ⁇ 1%, less than or equal to ⁇ 0.5%, less than or equal to ⁇ 0.1%, or less than or equal to ⁇ 0.05%.
- substantially parallel can refer to a range of angular variation relative to 0° that is less than or equal to ⁇ 10°, such as less than or equal to ⁇ 5°, less than or equal to ⁇ 4°, less than or equal to ⁇ 3°, less than or equal to ⁇ 2°, less than or equal to ⁇ 1°, less than or equal to ⁇ 0.5°, less than or equal to ⁇ 0.1°, or less than or equal to ⁇ 0.05°.
- substantially perpendicular can refer to a range of angular variation relative to 90° that is less than or equal to ⁇ 10°, such as less than or equal to ⁇ 5°, less than or equal to ⁇ 4°, less than or equal to ⁇ 3°, less than or equal to ⁇ 2°, less than or equal to ⁇ 1°, less than or equal to ⁇ 0.5°, less than or equal to ⁇ 0.1°, or less than or equal to ⁇ 0.05°.
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
- The present disclosure relates to an electronic device package including a stack of electronic components.
- A stacking electronic device package includes two or more electronic components stacked on each other. The stacked electronic components are electrically connected to each other through conductive structures such as solder bumps, and an underfill is normally formed to ensure the joint between the stacked electronic components. The underfill, however, may creep up edges of the electronic component, making it difficult to remove the carrier for temporarily supporting the electronic component.
- In some embodiments, an electronic device package includes a redistribution layer and a conductive substrate. The RDL includes a first surface. The conductive substrate is disposed on the first surface and electrically connected to the RDL. A circuit density of the RDL is higher than a circuit density of the conductive substrate, and an edge of the RDL laterally protrudes out from a respective edge of the conductive substrate.
- In some embodiments, an electronic device package includes a fan-out circuit layer, a substrate and a semiconductor die. The fan-out circuit layer includes a first surface and a second surface opposite to the first surface. The substrate is adjacent to the first surface of the fan-out circuit layer, and electrically connected to the fan-out circuit layer. The semiconductor die is adjacent to the second surface of the fan-out circuit layer, and electrically connected to the fan-out circuit layer. An area of the fan-out circuit layer is larger than that of the substrate and that that of the semiconductor die.
- In some embodiments, a method of manufacturing an electronic device package includes following operations. A mother substrate is provided. A first singulation is performed to divide the mother substrate into a plurality of substrates. At least some of the plurality of substrates are mounted on a redistribution substrate. A second singulation is performed to divide the redistribution substrate into a plurality of redistribution layers (RDLs) subsequent to the at least some of the plurality of substrates are mounted on the redistribution substrate.
- Aspects of some embodiments of the present disclosure are readily understood from the following detailed description when read with the accompanying figures. Various structures may not be drawn to scale, and the dimensions of the various structures may be arbitrarily increased or reduced for clarity of discussion.
-
FIG. 1 is a cross-sectional view of an electronic device package in accordance with some embodiments of the present disclosure. -
FIG. 2 is a cross-sectional view of an electronic device package in accordance with some embodiments of the present disclosure. -
FIG. 3A ,FIG. 3B ,FIG. 3C ,FIG. 3D andFIG. 3E illustrate operations of manufacturing an electronic device package in accordance with some embodiments of the present disclosure. - The following disclosure provides for many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to explain certain aspects of the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed or disposed in direct contact, and may also include embodiments in which additional features are formed or disposed between the first and second features, such that the first and second features are not in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- As used herein, spatially relative terms, such as “beneath,” “below,” “above,” “over,” “on,” “upper,” “lower,” “left,” “right,” “vertical,” “horizontal,” “side” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. It should be understood that when an element is referred to as being “connected to” or “coupled to” another element, it may be directly connected to or coupled to the other element, or intervening elements may be present.
- In some embodiments, present disclosure provides a stacking electronic device package includes a RDL circuit layer and a conductive substrate stacked on each other. The RDL circuit layer has relatively higher circuit density and larger area than the conductive substrate. This configuration prevents the vulnerable high density RDL circuit layer from being damaged in a de-carrier operation by an underfill, and thus the yield and reliability of the electronic device package can be improved.
-
FIG. 1 is a cross-sectional view of anelectronic device package 1 in accordance with some embodiments of the present disclosure. As shown inFIG. 1 , theelectronic device package 1 includes a redistribution layer (RDL) 10 and aconductive substrate 20 stacked on theRDL 10. TheRDL 10 includes a first surface (e.g., a lower surface) 101, and a second surface (e.g., an upper surface) 102 opposite to thefirst surface 101. The conductive substrate (also referred to as a substrate) 20 is adjacent to or disposed on thefirst surface 101 and electrically connected to theRDL 10. Theconductive substrate 20 includes athird surface 201 facing thefirst surface 101 of theRDL 10, and afourth surface 202 opposite to thethird surface 201. TheRDL 10 and theconductive substrate 20 both include circuit layers at least partially embedded therein. The circuit density of theRDL 10 is higher than the circuit density of theconductive substrate 10. The line width/spacing (L/S) of theRDL 10 is narrower than the L/S of theconductive substrate 20. By way of example, theRDL 10 may include a bumping-level circuit layer. The L/S of theRDL 10 may be, but is not limited to be, between about 2 μm/about 2 μm and about 10 pin/about 10 The bumping-level circuit layer may be patterned and defined by e.g., photolithography-plating-etching technique. Theconductive substrate 20 may include a substrate-level circuit layer. The L/S of theconductive substrate 20 may be, but is not limited to be, larger than about 10 pin/about 10 μm. The substrate-level circuit layer may be patterned and defined by e.g., laser drill-plating-etching techniques. In some embodiments, theRDL 10 is thinner than and more fragile than theconductive substrate 10. An area of theRDL 10 is larger than an area of theconductive substrate 10, and thus at least anedge 10E of theRDL 10 laterally protrudes out from arespective edge 20E of theconductive substrate 10. In some embodiments, theRDL 10 and theconductive substrate 20 are polygonal shape such as rectangular shape, and two, three or alledges 10E of theRDL 10 laterally protrude out fromrespective edges 20E of theconductive substrate 10. - In some embodiments, the
RDL 10 may include one or moreinsulative layers 12, and one or moreconductive wiring layers 14 stacked on one another. The material of the insulative layer(s) 12 may include organic insulative material such as epoxy resin, bismaleimide-triazine (BT) resin, inorganic insulative material such as silicon oxide, silicon nitride, or a combination thereof. The material of the conductive wiring(s) 14 may include metal such as copper (Cu) or the like. Theconductive wirings 14 may include firstelectrical terminals 14A such as bonding pads exposed from thefirst surface 101 to connect theconductive substrate 10, and secondelectrical terminals 14B such as bonding pads exposed from thesecond surface 102 to connect to another electronic component such as a semiconductor die. - In some embodiments, the
conductive substrate 20 may be a core substrate or a core-less substrate. Theconductive substrate 20 may include one or moreinsulative layers 22, and one or more conductive wiring layers 24 stacked on one another. The material of the insulative layer(s) 22 may include organic insulative material such as epoxy resin, bismaleimide-triazine (BT) resin, inorganic insulative material such as silicon oxide, silicon nitride, or a combination thereof. The material of the conductive wiring(s) 24 may include metal such as copper (Cu) or the like. Theconductive wirings 24 may include firstelectrical terminals 24A such as bonding pads exposed from thethird surface 201 to connect theconductive substrate 10, and secondelectrical terminals 24B such as bonding pads exposed from thefourth surface 202 to connect an external electronic component such as a printed circuit board (PCB). - The
electronic device package 1 may further include a plurality of firstconductive structures 16 disposed between and electrically connected to theRDL 10 and theconductive substrate 20. In some embodiments, the firstconductive structures 16 may include conductive pillars such as copper pillars, conductive bumps such as solder bumps or the like, and electrically connected to theRDL 10 through the firstelectrical terminals 14A and electrically connected to theconductive substrate 20 through the firstelectrical terminals 24A. - The
electronic device package 1 may further include afirst underfill 26 disposed between theRDL 10 and theconductive substrate 20. Thefirst underfill 26 may be in contact with theRDL 10 and/or theconductive substrate 20. In some embodiments, the material of thefirst underfill 26 may include a flow-able insulative material such as epoxy resin. The flow-ablefirst underfill 26 may climb up theedge 20E of theconductive substrate 20. In some embodiments, thefirst underfill 26 partially climbs up theedge 20E of theconductive substrate 20, and a portion of theedge 20E is not covered by thefirst underfill 26. Theelectronic device package 1 may further include afirst encapsulation layer 28 disposed on thefirst surface 101 of theRDL 10 and encapsulating theconductive substrate 20. Thefirst encapsulation layer 28 may include molding compounds such epoxy resin, and fillers such as silicon oxide fillers may be filled in the molding compound. In some embodiments, thefirst encapsulation layer 28 may encapsulate thefirst underfill 26 and the portion of theedge 20E of theconductive substrate 20 exposed from thefirst underfill 26. Thefirst encapsulation layer 28 may expose thefourth surface 202 of theconductive substrate 20. In some other embodiments, thefirst underfill 26 may be omitted, and thefirst encapsulation layer 28 may include a molding underfill (MUF) disposed between theRDL 10 and theconductive substrate 20 and encapsulating theconductive substrate 20. The MUF may be in contact with theRDL 10 and/or theconductive substrate 20. - In some embodiments, the
electronic device package 1 may further include a plurality ofelectrical conductors 40 disposed on thefourth surface 202 of theconductive substrate 20, and electrically connected to the secondelectrical terminals 24B of theconductive substrate 20. Theelectrical conductors 40 may include solder balls or solder bumps such as C4 bumps for connecting an external component such as a PCB. - The
electronic device package 1 may further include anelectronic component 30 adjacent to or disposed on thesecond surface 102 of theRDL 10 and electrically connected to theRDL 10. Theelectronic component 30 may include a semiconductor die with embedded circuit layer, and the circuit density of theelectronic component 30 is higher than the circuit density of theRDL 10. By way of example, the circuit layer of theelectronic component 30 may include a foundry-level circuit layer with a relatively narrower L/S. By way of example, the L/S of the foundry-level circuit may be less than about 2 μm/about 2 The foundry-level circuit layer may be patterned and defined by e.g., advanced photolithography-plating-etching techniques. The area of theelectronic component 30 is smaller than the area of theRDL 10, and severalelectronic components 30 may be disposed on theRDL 10. In some embodiments, theRDL 10 may be configured as a fan-out RDL or a fan-out circuit layer with respect to theelectronic component 30, in which a projected area of the firstelectrical terminals 14A and the secondelectrical terminals 14B may be greater than and exceeding a projected area of theelectronic component 30. Theelectronic component 30 may include a plurality ofelectrical terminals 32 such as bonding pads facing theRDL 10 and configured to electrically connect theRDL 10. - The
electronic device package 1 may further include a plurality of secondconductive structures 34 disposed between and electrically connected to theelectronic component 30 and theRDL 10. The secondconductive structures 34 may include conductive pillars such as copper pillars, conductive bumps such as solder bumps or the like electrically connected to theelectronic component 30 through theelectrical terminals 32, and electrically connected to theRDL 10 through the secondelectrical terminals 14B. Theelectronic device package 1 may further include asecond underfill 36 disposed between theelectronic component 30 and theRDL 10. In some embodiments, the material of thesecond underfill 36 may include a flow-able insulative material such as epoxy resin. The flow-ablesecond underfill 36 may partially or entirely climb up anedge 30E of theelectronic component 30. Theelectronic device package 1 may further include asecond encapsulation layer 38 disposed on thesecond surface 102 of theRDL 10 and encapsulating theelectronic component 30. Thesecond encapsulation layer 38 may include molding compounds such epoxy resin, and fillers such as silicon oxide fillers may be filled in the molding compound. In some embodiments, thesecond encapsulation layer 38 may encapsulate thesecond underfill 36 and theedge 30E of theelectronic component 30. Thesecond encapsulation layer 38 may further encapsulate the inactive surface of theelectronic component 30. - The
RDL 10 is relatively thinner than and more vulnerable than theconductive substrate 10. In case theRDL 10 is first singulated from a redistribution substrate and then bonded to theconductive substrate 20, thesingulated RDL 10 is supported by a carrier. The underfill between thesingulated RDL 10 and theconductive substrate 20, however, would climb up the edge of theRDL 10 and contact the carrier. The underfill would result in difficulties in a de-carrier operation in which the carrier is removed. In some embodiments of the present disclosure, the relatively rigid and thickerconductive substrate 20 is first singulated from a mother substrate and then bonded to a redistribution substrate including a plurality ofnon-singulated RDLs 10. The rigidconductive substrate 20 after being singulated may not need a carrier to support, and no de-carrier operation is required. TheRDLs 10 are not singulated before thefirst underfill 26 is formed, and thus the carrier for supporting the redistribution substrate is prevented from contacting thefirst underfill 26. Accordingly, the yield and reliability of theelectronic device package 1 can be improved. - The electronic device packages and manufacturing methods of the present disclosure are not limited to the above-described embodiments, and may be implemented according to other embodiments. To streamline the description and for the convenience of comparison between various embodiments of the present disclosure, similar components the following embodiments are marked with same numerals, and may not be redundantly described.
-
FIG. 2 is a cross-sectional view of anelectronic device package 2 in accordance with some embodiments of the present disclosure. As shown inFIG. 2 , in contrast to theelectronic device package 1 inFIG. 1 , thefirst underfill 26 entirely climbs up theedge 20E of theconductive substrate 20. -
FIG. 3A ,FIG. 3B ,FIG. 3C ,FIG. 3D andFIG. 3E illustrate operations of manufacturing an electronic device package in accordance with some embodiments of the present disclosure. As shown inFIG. 3A , amother substrate 10M is provided. Themother substrate 10M includes a plurality of pre-formedconductive substrates 20. In some embodiments, a plurality of firstconductive structures 16 may be formed on the firstelectrical terminals 24A of theconductive substrate 20. As shown inFIG. 3B , afirst singulation 52 is performed to divide themother substrate 20M into a plurality ofsubstrates 20. - As shown in
FIG. 3C , aredistribution substrate 10M is provided. Theredistribution substrate 10M includes a plurality of preformedRDLs 10. In some embodiments, theredistribution substrate 10M is supported by acarrier 60, and a releasinglayer 62 may be used to attach theredistribution substrate 10M to thecarrier 60. At least some of the plurality ofconductive substrates 20 are mounted on theredistribution substrate 10M, and electrically connected to theRDLs 10 through the firstconductive structures 16. - As shown in
FIG. 3D , afirst underfill 26 is formed between theconductive structures 20 and theredistribution substrate 10M. Thefirst underfill 26 may partially or entirely climb up theedge 20E of theconductive substrate 20. Since theredistribution substrate 10M is not singulated when thefirst underfill 26 is formed, thecarrier 60 is separated fromfirst underfill 26 by theredistribution substrate 10M. Afirst encapsulation layer 28 is formed to encapsulate theconductive substrates 20. - As shown in
FIG. 3E , thecarrier 60 is removed. A plurality ofelectronic components 30 are mounted on the other surface of theredistribution substrate 10M opposite to theconductive substrates 20 through secondconductive structures 34. Asecond underfill 36 is formed between theredistribution substrate 10M and theelectronic components 30. Asecond encapsulation layer 38 is formed to encapsulate theelectronic components 30. Asecond singulation 54 is performed to divide theredistribution substrate 10M into a plurality of redistribution layers (RDLs) 10 subsequent to theconductive substrates 20 are mounted on theredistribution substrate 10M to form the electronic device package as illustrated inFIG. 1 orFIG. 2 . Subsequent to the second singulation, theedge 10E of the eachRDL 10 laterally protrudes out from arespective edge 20E of theconductive substrate 20. - In some embodiments of the present disclosure, the electronic device package includes a RDL circuit layer and a conductive substrate stacked on each other. The RDL circuit layer has relatively higher circuit density and larger area than the conductive substrate. This configuration prevents the vulnerable high density RDL circuit layer from being damaged in a de-carrier operation by an underfill, and thus the yield and reliability of the electronic device package can be improved.
- As used herein, the singular terms “a,” “an,” and “the” may include a plurality of referents unless the context clearly dictates otherwise.
- As used herein, the terms “approximately,” “substantially,” “substantial” and “about” are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation. For example, when used in conjunction with a numerical value, the terms can refer to a range of variation of less than or equal to ±10% of that numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two numerical values can be deemed to be “substantially” the same or equal if the difference between the values is less than or equal to ±10% of an average of the values, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, “substantially” parallel can refer to a range of angular variation relative to 0° that is less than or equal to ±10°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, “substantially” perpendicular can refer to a range of angular variation relative to 90° that is less than or equal to ±10°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.
- Additionally, amounts, ratios, and other numerical values are sometimes presented herein in a range format. It is to be understood that such range format is used for convenience and brevity and should be understood flexibly to include numerical values explicitly specified as limits of a range, but also to include all individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range were explicitly specified.
- While the present disclosure has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations do not limit the present disclosure. It should be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not be necessarily drawn to scale. There may be distinctions between the artistic renditions in the present disclosure and the actual apparatus due to manufacturing processes and tolerances. There may be other embodiments of the present disclosure which are not specifically illustrated. The specification and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the present disclosure. All such modifications are intended to be within the scope of the claims appended hereto. While the methods disclosed herein are described with reference to particular operations performed in a particular order, it will be understood that these operations may be combined, sub-divided, or re-ordered to form an equivalent method without departing from the teachings of the present disclosure. Accordingly, unless specifically indicated herein, the order and grouping of the operations are not limitations on the present disclosure.
Claims (20)
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US16/663,082 US20210125946A1 (en) | 2019-10-24 | 2019-10-24 | Electronic device package and method for manufacturing the same |
CN201911320526.7A CN112713091A (en) | 2019-10-24 | 2019-12-19 | Electronic device package and method of manufacturing the same |
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US16/663,082 US20210125946A1 (en) | 2019-10-24 | 2019-10-24 | Electronic device package and method for manufacturing the same |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20220367413A1 (en) * | 2021-05-13 | 2022-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Packages With Multiple Types of Underfill and Method Forming The Same |
US20230009553A1 (en) * | 2021-07-08 | 2023-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method of forming the same |
Citations (1)
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US20200212018A1 (en) * | 2018-12-26 | 2020-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated Circuit Package and Method |
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2019
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- 2019-12-19 CN CN201911320526.7A patent/CN112713091A/en active Pending
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US20200212018A1 (en) * | 2018-12-26 | 2020-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated Circuit Package and Method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220367413A1 (en) * | 2021-05-13 | 2022-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Packages With Multiple Types of Underfill and Method Forming The Same |
US12087733B2 (en) * | 2021-05-13 | 2024-09-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Packages with multiple types of underfill and method forming the same |
US20230009553A1 (en) * | 2021-07-08 | 2023-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method of forming the same |
US11855057B2 (en) * | 2021-07-08 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method of forming the same |
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