US20210098251A1 - Method of manufacturing semiconductor device by supplying gas - Google Patents
Method of manufacturing semiconductor device by supplying gas Download PDFInfo
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- US20210098251A1 US20210098251A1 US16/826,844 US202016826844A US2021098251A1 US 20210098251 A1 US20210098251 A1 US 20210098251A1 US 202016826844 A US202016826844 A US 202016826844A US 2021098251 A1 US2021098251 A1 US 2021098251A1
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- gas
- substrate
- mounting plate
- gas supply
- substrate mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
Definitions
- the present disclosure relates to a substrate processing apparatus.
- an apparatus which intends to simultaneously improve a throughput and a processing quality, and is configured to supply a gas while revolving a substrate to perform desired substrate processing.
- Some embodiments of the present disclosure provide a technique capable of performing a uniform in-plane process of a substrate in an apparatus for processing the substrate while revolving the substrate.
- a technique that includes: a substrate mounting plate on which a plurality of substrates are arranged in a circumferential direction; a rotator configured to rotate the substrate mounting plate; a gas supply structure disposed above the substrate mounting plate from a center to an outer periphery of the substrate mounting plate; a gas supplier including the gas supply structure and configured to control a supply amount of a gas supplied from the gas supply structure; a gas exhaust structure installed above the substrate mounting plate at a downstream side of the gas supply structure in a rotation direction; a gas exhauster including the gas exhaust structure and configured to control an exhaust amount of a gas exhausted from the gas exhaust structure; and a gas main component amount controller including the gas supplier and the gas exhauster and configured to control a gas main component amount in the gas supplied from the gas supply structure to the substrates, wherein the gas main component amount controller is further configured to control the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the substrate mounting plate.
- FIG. 1 is an explanatory view for explaining a substrate processing apparatus according to a first embodiment of the present disclosure.
- FIG. 2 is an explanatory view for explaining the substrate processing apparatus according to the first embodiment.
- FIGS. 3A to 3C are explanatory views for explaining a gas supply part according to the first embodiment.
- FIG. 4 is an explanatory view for explaining a gas supply structure and a gas exhaust structure according to the first embodiment.
- FIG. 5 is an explanatory view for explaining the gas supply structure and the gas exhaust structure according to the first embodiment.
- FIG. 6 is an explanatory view for explaining a controller of the substrate processing apparatus according to the first embodiment.
- FIG. 7 is an explanatory view for explaining a substrate processing flow according to the first embodiment.
- FIG. 8 is an explanatory view for explaining the substrate processing flow according to the first embodiment.
- FIG. 9 is an explanatory view for explaining a state of a substrate to be processed in the first embodiment.
- FIG. 10 is an explanatory view for explaining a substrate processing apparatus according to a second embodiment of the present disclosure.
- FIG. 11 is an explanatory view for explaining a gas supply structure according to the second embodiment.
- FIG. 12 is an explanatory view for explaining a gas exhaust structure according to the second embodiment.
- FIG. 13 is an explanatory view for explaining the gas supply structure and the gas exhaust structure according to the second embodiment.
- FIG. 14 is an explanatory view for explaining a gas supply structure according to a third embodiment of the present disclosure.
- FIGS. 15A to 15C are explanatory views for explaining the gas supply structure according to the third embodiment.
- FIGS. 16A to 16C are explanatory views for explaining a relationship between the gas supply structure according to the third embodiment and supply of a gas to a substrate.
- FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus 200 according to the first embodiment.
- FIG. 2 is a schematic longitudinal cross-sectional view of the substrate processing apparatus 200 according to the first embodiment, which is a cross-sectional view taken along a line ⁇ - ⁇ ′ of a chamber 302 illustrated in FIG. 1 .
- the line ⁇ - ⁇ ′ is a line directing from ⁇ to ⁇ ′ through a center of the chamber 302 .
- the substrate processing apparatus 200 is controlled by a controller 400 to be described later.
- the substrate processing apparatus 200 mainly includes the chamber 302 which is a cylindrical airtight container.
- a process chamber 301 configured to process a substrate 100 is formed in the chamber 302 .
- a gate valve 305 is connected to the chamber 302 , and the substrate 100 is loaded and unloaded through the gate valve 305 .
- the process chamber 301 includes a processing region 306 into which a processing gas is supplied, and a purge region 307 into which a purge gas is supplied.
- the processing region 306 and the purge region 307 are alternately arranged in a circumferential direction.
- a first processing region 306 a , a first purge region 307 a , a second processing region 306 b and a second purge region 307 b are arranged in this order.
- a first gas is supplied into the first processing region 306 a
- a second gas is supplied into the second processing region 306 b
- an inert gas is supplied into the first purge region 307 a and the second purge region 307 b .
- the processing region 306 a is also called a first domain
- the processing region 306 b is also called a second domain
- the first purge region 307 a and the second purge region 307 b are also called purge domains.
- the purge region 307 is a region that spatially separates the first processing region 306 a and the second processing region 306 b from each other.
- a ceiling 308 of the purge region 307 is configured to be lower than a ceiling 309 of the processing region 306 .
- a ceiling 308 a is provided in the first purge region 307 a
- a ceiling 308 b is provided in the second purge region 307 b .
- a rotatable substrate mounting plate 317 having its rotary shaft at the center of the chamber 302 is installed in the middle of the chamber 302 .
- the substrate mounting plate 317 is configured such that a plurality of substrates 100 (for example, six substrates 100 ) can be arranged in the chamber 302 on the same plane and in the same circumferential direction along a rotation direction.
- the term “same plane” used herein is not limited to a completely same plane, but includes a case where a plurality of substrates 100 are arranged so as not to overlap with each other when the substrate mounting plate 317 is viewed from above.
- a concave portion 318 ′ is formed at a position where the substrate 100 is supported on the surface of the substrate mounting plate 317 .
- the same number of concave portions 318 ′ as the number of substrates 100 to be processed are arranged at equal intervals (for example, at intervals of 60 degrees) at concentric positions from the center of the substrate mounting plate 317 .
- illustration thereof is omitted for convenience of explanation.
- Each concave portion 318 ′ is, for example, circular when viewed from the top of the substrate mounting plate 317 and is concave when viewed from the side thereof.
- the diameter of the concave portion 318 ′ may be set to be slightly larger than the diameter of the substrate 100 .
- a substrate mounting surface 319 is formed at the bottom of the concave portion 318 ′, and the substrate 100 can be mounted on the substrate mounting surface 319 by mounting the substrate 100 in the concave portion 318 ′.
- the substrate mounting plate 317 is fixed to a core 321 .
- the core 321 is installed at the center of the substrate mounting plate 317 and has a role of fixing the substrate mounting plate 317 .
- a shaft 322 is disposed below the core 321 . The shaft 322 supports the core 321 .
- the lower part of the shaft 322 passes through a hole 323 formed at the bottom of the chamber 302 and is covered with a container 304 that can be airtight outside the chamber 302 .
- An elevating/rotating part 318 is installed at the lower end of the shaft 322 .
- the elevating/rotating part 318 is simply referred to as a rotating part (or rotator) 318 .
- the elevating/rotating part 318 is configured to rotate and elevate the substrate mounting plate 317 according to an instruction from the controller 400 .
- a heater unit 381 including a heater 380 as a heating part is disposed below the substrate mounting plate 317 .
- the heater 380 heats each of the substrates 100 mounted on the substrate mounting plate 317 .
- the heater 380 is disposed circumferentially along the shape of the chamber 302 .
- a heater control part 387 is connected to the heater 380 .
- the heater 380 is electrically connected to the controller 400 and controls supply of power to the heater 380 according to an instruction from the controller 400 to perform temperature control.
- An exhaust structure 386 is disposed on the outer periphery of the substrate mounting plate 317 .
- the exhaust structure 386 includes an exhaust groove 388 and an exhaust buffer space 389 .
- the exhaust groove 388 and the exhaust buffer space 389 are formed circumferentially along the shape of the chamber 302 .
- An exhaust port 392 is installed at the bottom of the exhaust structure 386 .
- the exhaust port 392 mainly exhausts the second gas supplied into the processing space 306 b and the purge gas supplied from the upstream thereof. Each gas is exhausted from the exhaust structure 391 and the exhaust port 392 via the exhaust groove 388 and the exhaust buffer space 389 .
- the chamber 302 includes a gas supply structure 410 .
- the gas supply structure 410 is disposed above the substrate mounting plate 317 .
- the chamber 302 includes nozzles 355 , 365 and 366 .
- “A” in FIG. 1 is connected to “A” in FIG. 3A . That is, the gas supply structure 410 is connected to a supply pipe 241 .
- “B” in FIG. 1 is connected to “B” in FIG. 3B . That is, the nozzle 355 is connected to a supply pipe 251 .
- “C” in FIG. 1 is connected to “C” in FIG. 3C . That is, the nozzles 365 and 366 are connected to a supply pipe 261 .
- FIG. 3A illustrates a first gas supply part 240 which is a part of the gas supply part. The details thereof will be described with reference to FIG. 3A .
- the first gas is mainly supplied from the first gas supply pipe 241 .
- a first gas supply source 242 which is a flow rate controller (flow rate control part), and a valve 244 which is an opening/closing valve are installed in order from the upstream side.
- a gas containing a first element (hereinafter referred to as the “first gas”) is supplied from the first gas supply pipe 241 to a shower head 230 via the MFC 243 , the valve 244 and the first gas supply pipe 241 .
- the first gas is a precursor gas, that is, one of processing gases.
- the first element is, for example, silicon (Si). That is, the first gas is a Si gas (also referred to as a Si-containing gas), which is a gas containing Si as a main component. Specifically, a dichlorosilane (SiH 2 Cl 2 , abbreviation: DCS) gas is used as the first gas.
- a vaporizer (not shown) may be installed between the first gas supply source 242 and the MFC 243 .
- the description will be made with the first gas as a gas.
- the first gas supply part 240 mainly includes the first gas supply pipe 241 , the MFC 243 , the valve 244 and the gas supply structure 410 . Further, the first gas supply part 240 may include the first gas supply source 242 .
- a second gas supply part 250 which is a part of the gas supply part will be described with reference to FIG. 3B .
- a second gas supply source 252 At the second gas supply pipe 251 , a second gas supply source 252 , an MFC 253 , which is a flow rate controller, and a valve 254 are installed in order from the upstream side.
- the reaction gas is also called a second gas.
- the second gas is one of the processing gases, for example, a nitrogen-containing gas containing nitrogen as a main component.
- a nitrogen-containing gas containing nitrogen for example, an ammonia (NH 3 ) gas is used as the nitrogen-containing gas.
- the second gas supply part 250 mainly includes the second gas supply pipe 251 , the MFC 253 , the valve 254 and the nozzle 355 . Since the second gas supply part 250 is configured to supply the reaction gas, it is also referred to as a reaction gas supply part. Further, the second gas supply part 250 may include the second gas supply source 252 .
- a purge gas supply part 260 which is a part of the gas supply part will be described with reference to FIG. 3C .
- a purge gas supply source 262 an MFC 263 , which is a flow rate controller (flow rate control part), and a valve 264 are installed in order from the upstream side.
- the purge gas is a gas that does not react with the first gas or the second gas, which is one of purge gases for purging the internal atmosphere of the process chamber 201 , for example, a nitrogen (N 2 ) gas.
- the purge gas supply part 260 mainly includes the purge gas supply pipe 261 , the WC 263 , the valve 264 , the nozzle 365 and the nozzle 366 .
- the purge gas supply part 260 may include the purge gas supply source 262 .
- the first gas supply part 240 , the second gas supply part 250 and the purge gas supply part 260 are collectively referred to as a gas supply part.
- the chamber 302 is provided with a gas exhaust structure 420 and an exhaust port 392 .
- the gas exhaust structure 420 is disposed above the substrate mounting plate 317 .
- An exhaust pipe 334 a is installed so as to communicate with the gas exhaust structure 420 .
- a vacuum pump 334 b which is a vacuum exhaust device, is connected to the exhaust pipe 334 a via a valve 334 d , which is an opening/closing valve, and an auto pressure controller (APC) valve 334 c which is a pressure regulator (pressure adjustment part).
- the vacuum pump 334 b is configured to vacuum-exhaust the interior of the process chamber 301 so that the internal pressure of the process chamber 301 becomes a predetermined pressure (degree of vacuum).
- the exhaust pipe 334 a , the valve 334 d , the APC valve 334 c and the gas exhaust structure 420 are collectively referred to as a first gas exhaust part 334 .
- the first gas exhaust part 334 may include the vacuum pump 334 b.
- a second gas exhaust part 335 is installed so as to communicate with the exhaust port 392 .
- the exhaust port 392 is formed on the downstream side of the processing region 306 b in the rotation direction.
- the second gas exhaust part 335 mainly exhausts the second gas and the inert gas.
- An exhaust pipe 335 a which is a part of the second gas exhaust part 335 , is installed so as to communicate with the exhaust port 392 .
- a vacuum pump 335 b which is a vacuum exhaust device, is connected to the exhaust pipe 335 a via a valve 335 d , which is an opening/closing valve, and an APC valve 335 c which is a pressure regulator (pressure adjustment part).
- the vacuum pump 335 b is configured to vacuum-exhaust the interior of the process chamber 301 so that the internal pressure of the process chamber 301 becomes a predetermined pressure (degree of vacuum).
- the exhaust pipe 335 a , the valve 335 d and the APC valve 335 c are collectively referred to as a second gas exhaust part 335 .
- the second gas exhaust part 335 may include the vacuum pump 335 b.
- the first gas supply part 240 and the first gas exhaust part 334 are collectively referred to as a first gas main component amount control part (or a first gas main component amount controller).
- the first gas main component amount control part controls an amount of gas main component in the first gas supplied to the substrate that passes below the gas supply structure 410 and the gas exhaust structure 420 by using one of the first gas supply part 240 and the first gas exhaust part 334 or interlocking of the two parts 240 and 334 .
- the second gas supply part 250 and the second gas exhaust part 335 are collectively referred to as a second gas main component amount control part (or a second gas main component amount controller).
- the second gas main component amount control part controls an exposure amount of the second gas supplied to the substrate that passes below the nozzle 355 by using one of the second gas supply part 250 and the second gas exhaust part 335 or interlocking of the two parts 250 and 335 .
- FIG. 4 is an explanatory view of the gas supply structure 410 and the gas exhaust structure 420 as viewed from the outer periphery of the substrate mounting plate 317 toward the center thereof “R” in FIG. 4 is the same as “R” in FIG. 1 and denotes the rotation direction of the substrate mounting plate 317 .
- FIG. 5 is an explanatory view of the gas supply structure 410 and the gas exhaust structure 420 as viewed from above.
- the direction of an arrow C indicates the center side of the substrate mounting plate 317
- the direction of an arrow E indicates the outer peripheral side of the substrate mounting plate 317 .
- “R” in FIG. 5 is the same as “R” in FIG. 1 and denotes the rotation direction of the substrate mounting plate 317 .
- W 1 , W 2 and W 3 denote arbitrary locations on the substrate 100 .
- W 2 denotes the center position of the substrate 100
- W 1 denotes a position of the substrate 100 closer to the center side of the substrate mounting plate 317 than W 2
- W 3 denotes a position of the substrate 100 closer to the outer periphery of the substrate mounting plate 317 than W 2 .
- the gas supply structure 410 mainly includes a housing 411 .
- a buffer space 412 is formed inside the housing 411 .
- a hole 413 is formed above the buffer space 412 , and a hole 414 is formed below the buffer space 412 .
- the hole 413 communicates with the supply pipe 241 .
- a gas supplied from the first gas supply part 240 is supplied to the substrate 100 via the hole 413 , the buffer space 412 and the hole 414 .
- the gas exhaust structure 420 mainly includes a housing 421 .
- a buffer space 422 is formed inside the housing 421 .
- a hole 423 is formed below the buffer space 422 , and a hole 424 is formed above the buffer space 422 .
- the hole 424 communicates with the first gas exhaust part 334 .
- a gas supplied from the gas supply structure 410 is exhausted through the hole 423 , the buffer space 422 and the hole 424 .
- the housing 411 is formed in a U-shape with the gas exhaust structure 420 side released.
- the hole 414 is formed along the outer peripheral shape of the substrate 100 .
- the hole 414 has a U-shape with the exhaust structure 420 side released in the same manner as the housing 411 .
- a continuous hole shape is used.
- a structure in which a plurality of holes are arranged along the outer periphery of the substrate 100 may be used.
- the housing 421 When the gas exhaust structure 420 is viewed from above, the housing 421 is formed in a U-shape with the gas supply structure 410 side released.
- the hole 423 is formed along the shape of the housing 421 . As indicated by a dotted line in FIG. 5 , the hole 423 is formed along the outer peripheral shape of the substrate 100 .
- the hole 423 has a U-shape with the supply structure 410 side released, in the same manner as the housing 421 .
- a continuous hole shape is used.
- a structure in which a plurality of holes are arranged along the outer periphery of the substrate may be used.
- the substrate 100 is in a state where many grooves are formed.
- a film is formed on the surface of a pillar that forms a wall of the groove.
- the grooves are formed on the entire surface of the substrate 100 . Therefore, when the surface of the substrate 100 is divided into a plurality of regions in a direction perpendicular to a moving direction of the substrate 100 , the surface area is different between a middle region of the substrate 100 and a lateral region of the substrate 100 .
- the surface area is different among a lateral region 110 , which is on the center side of the substrate mounting plate 317 and includes the point W 1 , a middle region 120 , which includes the point W 2 , and a lateral region 110 which is on the outer peripheral side of the substrate mounting plate 317 and includes the point W 3 .
- the surface area of the middle region 120 is larger than the surface area of each of the lateral regions 110 and 130 . This is because a length of the moving direction of the substrate 100 in the middle region 120 is larger than a length of the moving direction of the substrate 100 in the lateral regions 110 and 130 . It is assumed that the regions have the same width in the direction perpendicular to the moving direction.
- the inventors have found that a gas consumption is proportional to the surface area of the substrate 100 . Therefore, the region 120 having the largest surface area has the largest gas consumption. The region 110 and the region 120 have a gas consumption smaller than that of the region 120 .
- a gas supply amount that is, an amount of the main component of the gas is set according to the gas consumption.
- the distance between the hole 414 of the gas supply structure 410 and the hole 423 of the gas exhaust structure is set to a distance corresponding to the length of the substrate 100 so that a gas supply time according to the length in the moving direction is obtained.
- a distance between the hole 414 and the hole 423 (a distance Lb between 414 b and 423 b in FIG. 5 , also referred to as a first distance) is set to a predetermined distance corresponding to the length of the region 120 .
- a distance between the hole 414 and the hole 423 (a distance La between 414 a and 423 a in FIG. 5 , also referred to as a second distance) is set to a distance corresponding to the length of the region 110 .
- the distance La is smaller than the distance Lb.
- the distance La is set to be equal to a distance Lc.
- the substrate processing apparatus 200 includes the controller 400 that controls operations of respective parts of the substrate processing apparatus 200 .
- the controller 400 includes at least an arithmetic part (CPU) 401 , a non-transitory storage part 402 , a storage part 403 and a transmitting/receiving part 404 .
- the controller 400 is connected to the respective parts of the substrate processing apparatus 200 via the transmitting/receiving part 404 , calls a program or a recipe from the storage part 403 in accordance with an instruction from a higher-level controller or a user, and controls the operations of the respective parts according to contents of the called program or recipe.
- the controller 400 may be configured as a dedicated computer or a general-purpose computer.
- the controller 400 according to the present embodiment may be configured by providing an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory (USB Flash Drive) or a memory card, etc.) 412 storing the above-described program and installing, on the general-purpose computer, a program using the external storage device 512 .
- the means for supplying the program to the computer is not limited to the case where the program is supplied via the external storage device 512 .
- a communication means such as the Internet or a dedicated line may be used, or information may be received from a host device 520 via the transmitting/receiving part 404 and the program may be supplied without passing through the external storage device 512 . Further, the controller 400 may be instructed using an input/output device 513 such as a keyboard or a touch panel.
- the storage part 402 and the external storage device 512 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. In the present disclosure, when the term “recording medium” is used, it may include the storage part 402 alone, the external storage device 512 alone, or both.
- FIG. 7 is a flowchart illustrating a substrate processing flow according to the present embodiment.
- FIG. 8 is a flowchart illustrating details of a film-forming step S 330 .
- the operations of respective parts of the substrate processing apparatus 200 are controlled by the controller 400 .
- a silicon-containing gas is used as the first gas
- an ammonia gas is used as the second gas
- a silicon nitride (SiN) film is formed as a thin film on the substrate 100
- a substrate loading/mounting step will be described. Illustration thereof is omitted in FIG. 7 .
- the substrate mounting plate 317 is rotated to move the concave portion 318 ′ to a position facing the gate valve 305 .
- lift pins (not shown) are lifted up to pass through through-holes (not shown) of the substrate mounting plate 317 .
- the gate valve 305 is opened such that the chamber 302 communicates with a vacuum transfer chamber (not shown).
- the substrate 100 is transferred from the transfer chamber onto the lift pins using a wafer transfer device (not shown), and then the lift pins are moved down.
- the substrate 100 is held in a horizontal posture on the concave portion 318 ′.
- a plurality of pillars 101 and extremely narrow grooves 102 each having a high aspect ratio and formed between the pillars 101 are formed in the loaded substrate 100 .
- a film is formed on a surface of the pillar 101 .
- the substrate mounting plate 317 is rotated so that a concave portion 318 ′ on which the substrate 100 is not mounted faces the gate valve 305 . Thereafter, similarly, the substrate is placed on the concave portion 318 ′. The flow is repeated until the substrate 100 is placed on all the concave portions 318 ′.
- the substrate transfer device is retracted outside the substrate processing apparatus 200 , and the gate valve 305 is closed to seal the interior of the chamber 302 .
- the heater 380 When the substrate 100 is mounted on the substrate mounting plate 317 , electric power is supplied to the heater 380 in advance to control the surface of the substrate 100 to be at a predetermined temperature.
- the temperature of the substrate 100 is, for example, 400 degrees C. or more and 500 degrees C. or less.
- the heater 380 is kept energized at least in a period from the time of the substrate loading/mounting step to the end of a substrate unloading step to be described later.
- a substrate mounting plate rotation starting step S 310 will be described.
- the rotating part 324 rotates the substrate mounting plate 317 in the R direction.
- the substrate 100 is moved in the order of the first processing region 306 a , the first purge region 307 a , the second processing region 306 b and the second purge region 307 b.
- a gas supply starting step S 320 will be described.
- the valve 244 is opened to start supplying a silicon-containing gas into the first processing region 306 a .
- the valve 254 is opened to supply an NH 3 gas into the second processing region 306 b.
- the MFC 243 is adjusted so that a flow rate of the silicon-containing gas becomes a predetermined flow rate.
- the supply flow rate of the silicon-containing gas is, for example, 50 sccm or more and 500 sccm or less.
- the MFC 253 is adjusted so that the flow rate of the NH 3 gas becomes a predetermined flow rate.
- the supply flow rate of the NH 3 gas is, for example, 100 sccm or more and 5,000 sccm or less.
- the interior of the process chamber 301 is exhausted by the first gas exhaust part 334 and the second gas exhaust part 335 , and an N 2 gas as a purge gas is supplied from the inert gas supply part 260 into the first purge region 307 a and the second purge region 307 b.
- a film-forming step S 330 will be described. Here, a basic flow of the film-forming step S 330 will be described, and the details thereof will be described later.
- a silicon-containing layer is formed in the first processing region 306 a , and further, the silicon-containing layer reacts with the NH 3 gas in the rotated second processing region 306 b to thereby form a silicon-containing film on the substrate 100 .
- the substrate mounting plate 317 is rotated a predetermined number of times so that the silicon-containing film has a desired film thickness.
- a gas supply stopping step S 340 will be described. After the substrate mounting plate 317 is rotated the predetermined number of times, the valves 244 and 254 are closed to stop the supply of the silicon-containing gas into the first processing region 306 a and the supply of the NH 3 gas into the second processing region 306 b.
- a substrate mounting plate rotation stopping step S 350 will be described. After the gas supply stopping step S 340 , the rotation of the substrate mounting plate 317 is stopped.
- a substrate unloading step will be described. Illustration thereof is omitted in FIG. 7 .
- the substrate mounting plate is rotated to move the substrate 100 to be unloaded to a position facing the gate valve 305 . After that, the substrate is unloaded in reverse as compared with the method of loading the substrate. These operations are repeated until all the substrates 100 are unloaded.
- FIG. 8 is a flowchart with one substrate as the subject.
- a plurality of substrates 100 are sequentially passed through the first processing region 306 a , the first purge region 307 a , the second processing region 306 b and the second purge region 307 b by the rotation of the substrate mounting plate 317 .
- a first gas supplying step S 202 will be described.
- a silicon-containing gas is supplied to the substrate 100 when the substrate 100 passes through the first processing region 306 a .
- the supplied silicon-containing gas is decomposed to form a silicon-containing layer in the groove 102 .
- a first purge step S 204 will be described.
- the substrate 100 is moved to the first purge region 307 a after passing through the first processing region 306 a .
- the component 104 of the silicon-containing gas that could not form a strong coupling on the substrate 100 in the first processing region 306 a is removed from the substrate 100 by an inert gas.
- a second gas supplying step S 206 will be described.
- the substrate 100 is moved to the second processing region 306 b after passing through the first purge region 307 a .
- the silicon-containing gas component in the groove 102 reacts with the NH 3 gas component, and a cut silicon-containing gas component and the NH 3 gas component are coupled to form a silicon-containing layer having a degree of coupling.
- a second purge step S 208 will be described. After passing through the second processing region 306 b , the substrate 100 is moved to the second purge region 307 b .
- the substrate 100 passes through the second purge region 307 b , a HCl or NH 4 Cl gas desorbed from the layer on the substrate 100 in the second processing region 306 c or a surplus gas is removed from the substrate 100 by an inert gas.
- first gas supplying step S 202 first purge step S 204 , second gas supplying step S 206 and second purge step S 208 are defined as one cycle.
- a determining step S 210 will be described.
- the controller 400 determines whether the one cycle has been performed a predetermined number of times. Specifically, the controller 400 counts the number of rotations of the substrate mounting plate 317 .
- the rotation of the substrate mounting plate 317 is further continued to repeat the cycle including the first gas supplying step S 202 , the first purge step S 204 , the second gas supplying step S 206 and the second purge step S 208 .
- a thin film is formed by laminating layers in this manner.
- the film-forming step S 330 is ended. In this manner, by performing the one cycle a predetermined number of times, a laminated thin film having a predetermined thickness is formed. Thus, a film is formed in the groove 102 .
- the amount (i.e., concentration) of gas main component can be adjusted according to the state of the substrate (the surface area of the substrate in this embodiment), uniform processing can be performed on the surface of the substrate, which can lead to increase in yield.
- the gas supply structure 410 and the gas exhaust structure 420 may be replaceable according to the state of the substrate. For example, when information on the surface area of a substrate to be processed next is received, the gas supply structure 410 and the gas exhaust structure 420 are replaced according to the surface area.
- the second embodiment is different from the first embodiment in terms of the gas supply structure and the gas exhaust structure of the processing region 306 a .
- Other configurations are the same.
- the differences will be mainly described.
- a gas supply structure 430 is used as the gas supply structure of the processing region 306 a .
- a gas exhaust structure 440 is used as the gas exhaust structure.
- the state of film such as a film thickness or the concentration of gas main component in the film may be different. This is because the amount of gas main component is different. Therefore, the yield may be reduced.
- the technique according to the present embodiment is a technique for making the amount of gas main component uniform on the center side and the outer peripheral side of the substrate mounting plate 317 , and specific examples thereof will be described below with a specific example thereof.
- the gas supply structure 430 will be described with reference to FIG. 11 .
- the gas supply structure 430 includes a supply buffer structure 431 and a supply pipe 432 connected thereto.
- a plurality of supply buffer structures 431 are installed in the radial direction of the substrate mounting plate 317 .
- supply buffer structures 431 a , 431 b and 431 c are installed in this order from the center of the substrate mounting plate 317 .
- a hole 436 is formed in the lower surface of the supply buffer structure 431 .
- a gas in the supply buffer structure 431 is supplied toward the substrate mounting plate 317 through the hole 436 .
- the supply pipes 432 are installed corresponding to the respective supply buffer structures 431 .
- a supply buffer structure 431 a has a hole 436 a to which a supply pipe 432 a is connected.
- a supply buffer structure 431 b has a hole 436 b to which a supply pipe 432 b is connected.
- a supply buffer structure 431 c has a hole 436 c to which a supply pipe 432 c is connected.
- the supply buffer pipes 431 merges in the upstream and is connected to a junction pipe 433 .
- the junction pipe 433 is connected to the first gas supply part 240 .
- an MFC 434 and a valve 435 are installed from the upstream side.
- An MFC 434 a and a valve 435 a are installed at the supply pipe 432 a
- an MFC 434 b and a valve 435 b are installed at the supply pipe 432 b
- an MFC 434 c and a valve 435 c are installed at the supply pipe 432 c , respectively.
- the gas supply amount of the gas to be supplied to the substrate 100 that is, the amount of gas main component, can be controlled for each supply buffer structure 431 .
- the gas exhaust structure 440 includes an exhaust buffer structure 441 and an exhaust pipe 442 connected thereto.
- a plurality of exhaust buffer structures 441 are installed in the radial direction of the substrate mounting plate 317 .
- exhaust buffer structures 441 a , 441 b and 441 c are installed in this order from the center of the substrate mounting plate 317 .
- a hole 446 is formed in the lower surface of the exhaust buffer structure 441 .
- a gas under the exhaust buffer structure 441 is moved into the exhaust buffer structure 441 through the hole 446 .
- the exhaust pipes 442 are installed corresponding to the respective exhaust buffer structures 441 .
- an exhaust buffer structure 441 a has a hole 446 a to which an exhaust pipe 442 a is connected.
- An exhaust buffer structure 441 b has a hole 446 b to which an exhaust pipe 442 b is connected.
- An exhaust buffer structure 441 c has a hole 446 c to which an exhaust pipe 442 c is connected.
- the respective exhaust pipes 442 are joined in the downstream and are connected to a junction pipe 443 .
- the junction pipe 443 is connected to the first gas exhaust part 334 .
- a valve 444 and an APC valve 445 may be installed from the upstream side.
- a valve 444 a and an APC valve 445 a may be installed at the exhaust pipe 442 a
- a valve 444 b and an APC valve 445 b may be installed at the exhaust pipe 442 b
- a valve 444 c and an APC valve 445 c may be installed at the exhaust pipe 442 c.
- W 1 , W 2 and W 3 denote arbitrary points on the substrate.
- An arbitrary point W 1 indicates a point on the center side of the substrate mounting plate 317 in the substrate 100 .
- An arbitrary point W 2 indicates a point on the outer peripheral side of the substrate mounting plate 317 with respect to W 1 .
- An arbitrary point W 3 indicates a point on the outer peripheral side of the substrate mounting plate 317 in the substrate 100 with respect to W 2 .
- a revolution orbit Ra indicates the orbit of the arbitrary point W 1
- a revolution orbit Rb indicates the orbit of the arbitrary point W 2
- a revolution orbit Rc indicates the orbit of the arbitrary point W 3 .
- the holes 436 and the holes 446 correspond to each other on the revolution orbit of the substrate 100 .
- the hole 436 a and the hole 446 a correspond to each other on the revolution orbit Ra of the arbitrary point W 1 .
- the hole 436 b and the hole 446 b correspond to each other on the revolution orbit Rb of the arbitrary point W 2 .
- the hole 436 c and the hole 446 c correspond to each other on the revolution orbit Rc of the arbitrary point W 3 .
- the gas supply amount can be controlled in each supply buffer structure 431 and a gas exhaust amount can be controlled in each exhaust buffer structure 441 , a gas flow can be individually formed between the corresponding supply buffer structure 431 and exhaust buffer structure 441 , and the gas supply amount to the substrate 100 can be controlled. That is, the gas supply amount can be individually controlled on the center side and the outer peripheral side of the substrate mounting plate 317 . Therefore, the amounts of gas main components can be individually controlled.
- the gas supply amount on the outer peripheral side where the moving distance thereof is long can be made larger than that on the center side where the moving distance thereof is short. That is, at any point on the substrate, the supply amount of main component of a gas to be exposed can be made equal between the outer peripheral side and the center side. This can result in improvement in in-plane uniformity of the substrate 100 and increase in yield.
- the moving distance of the substrate 100 gradually increases from the center to the outer periphery of the substrate mounting plate 317 , for example, three or more supply buffer structures 431 and three or more exhaust buffer structures 441 may be installed as illustrated in FIG. 13 .
- the gas supply amount corresponding to the moving distance can be more precisely controlled.
- a table obtained by comparing the state of the substrate with the supply amount of gas main component is stored in the storage part 403 in advance.
- Information on the state of a substrate 100 to be processed next for example, surface area information, is received from the host device 520 and stored in the storage part 403 .
- the CPU 401 compares the information with the table, reads a control value of the gas main component amount control part (or the gas main component amount controller) according to the information, and controls the gas main component amount control part.
- the substrate having the larger surface area refers to, for example, a substrate having a large number of circuit patterns such as a plurality of deep grooves
- the substrate having the small surface area refers to, for example, a substrate having a small number of circuit patterns such as a plurality of relatively shallow grooves.
- FIGS. 14, 15A to 15C, and 16A to 16C The third embodiment is different from the second embodiment in terms of the supply buffer structure in the apparatus form. Others have the same structure. Hereinafter, the differences will be mainly described.
- the direction of an arrow C indicates the center direction of the substrate mounting plate 317
- the direction of an arrow E indicates the outer peripheral direction of the substrate mounting plate 317 .
- the rear side is an upstream side in the rotation direction
- the front side is a downstream side in the rotation direction.
- FIGS. 15A to 15C are explanatory views illustrating a relationship between a supply buffer structure 451 and a hole 456 to be described below.
- FIG. 15A illustrates a supply buffer structure 451 a
- FIG. 15B illustrates a supply buffer structure 451 b
- FIG. 15C illustrates a supply buffer structure 451 c .
- “R” denotes the rotation direction of the substrate mounting plate 317 . The substrate 100 is moved below each supply buffer structure 451 in the R direction.
- FIGS. 16A to 16C are explanatory views illustrating a relationship between each supply hole 456 and the concentration of the gas supplied to the substrate 100 .
- the gas concentration is also referred to as a concentration of gas main component.
- reference numeral 460 denotes a gas supplied from the hole 456 .
- a portion having a high concentration closest to the hole 456 is denoted by 461 , and portions denoted by 462 and 463 are sequentially set as a distance from the hole 456 increases. Since the gas 460 diffuses as the gas moves away from the hole 456 , the gas concentration also decreases as the gas moves away from the supply hole 456 . Therefore, the gas concentration becomes 461 > 462 > 463 .
- the substrate 100 is moved in the R direction under each buffer structure 451 .
- the point W 1 passes under the buffer structure 451 a
- the point W 2 passes under the buffer structure 451 b
- the point W 3 passes below the buffer structure 451 c.
- the point W 1 indicates a point in the substrate 100 on the center side of the substrate mounting plate 317 .
- the point W 2 indicates a point in the substrate 100 on the outer peripheral side of the substrate mounting plate 317 with respect to W 1 .
- the point W 3 indicates a point in the substrate 100 on the outer peripheral side of the substrate mounting plate 317 with respect to W 2 .
- a plurality of supply buffer structures 451 are installed from the center to the outer periphery of the substrate mounting plate 317 .
- the supply buffer structure 451 a , the supply buffer structure 451 b and the supply buffer structure 451 c are installed in this order.
- Each supply buffer structure 451 is connected to the supply pipe 432 .
- the supply pipe 432 a is connected to the supply buffer structure 451 a
- the supply pipe 432 b is connected to the supply buffer structure 451 b
- the supply pipe 432 c is connected to the supply buffer 451 c.
- Each supply buffer structure 451 has the hole 456 .
- the supply buffer structure 451 a has a hole 456 a
- the supply buffer structure 451 b has a hole 456 b
- the supply buffer structure 451 c has a hole 456 c .
- a gas supplied to the supply buffer structure 451 is supplied to the substrate 100 via the hole 456 .
- the openings of the holes 456 are formed at different inclination angles with respect to the surface of the substrate 100 .
- the hole 456 a is formed to be parallel to the surface of the substrate 100 or face toward the substrate mounting plate 317 .
- the hole 456 c is formed to face toward a direction perpendicular to the surface of the substrate 100 .
- the hole 456 b is formed to have an angle between the angle of the hole 456 a and the angle of the hole 456 c . In this way, the opening direction of the hole 456 gradually face toward the surface of the substrate from the center to the outer periphery.
- the concentration of the gas supplied to the substrate 100 in the above configuration will be described with reference to FIGS. 16A to 16C .
- a distance between the supply hole 456 and the substrate 100 decreases as the supply hole 456 faces toward the substrate 100 .
- the gas concentration increases as a distance from the supply hole decreases.
- the concentration of the gas supplied to the substrate 100 may be (c)>(b)>(a).
- the gas concentration at the point W 1 is controlled to be lower than the gas concentration at the point W 3 , and the supply amounts of gas main components at the points W 1 and W 3 are controlled to be the same.
- a process in the plane of the substrate 100 can be made uniform. Therefore, a film quality such as a film thickness and a concentration of main component in the film can be made uniform, which can result in the increase in yield.
- the supply amount of gas main component can be controlled according to their respective states.
- a table obtained by comparing the state of the substrate with the supply amount of gas main component is stored in the storage part 403 in advance.
- Information on the state of a substrate 100 to be processed next for example, surface area information, is received from the host device 520 and stored in the storage part 403 .
- the CPU 401 compares the information with the table, and reads a control value gas of the gas main component amount control part according to the information, and controls the gas main component amount control part.
- the reaction gas supplied to the second processing region has the following properties as an example. That is, this is an example in which the reaction gas has a property of being saturated or a property close to saturation when reacting with the precursor gas supplied to the first processing region.
- the configuration corresponding to the gas supply structure 410 and the gas exhaust structure 420 may be disposed in the second processing region 306 b.
- gas supply structure and the gas exhaust structure in the first embodiment may be divided into a plurality of supply buffer structures and exhaust buffer structures as in the second embodiment.
- the amount of gas main component can be adjusted more precisely.
- the expression “the same” includes not only exactly the same but also substantially the same including some errors.
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Abstract
There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.
Description
- This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2019-175993, filed on Sep. 26, 2019, the entire contents of which are incorporated herein by reference.
- The present disclosure relates to a substrate processing apparatus.
- In the related art, there is an apparatus which intends to simultaneously improve a throughput and a processing quality, and is configured to supply a gas while revolving a substrate to perform desired substrate processing.
- When processing a substrate, it is desirable to uniformly process a surface of the substrate. However, in a case of an apparatus that revolves a substrate, situation of supplying a gas to the substrate may be different between a center side and an outer peripheral side of the apparatus due to restrictions on a form of the apparatus. In that case, it is difficult to perform a uniform in-plane process of the substrate, which leads to a decrease in yield.
- Some embodiments of the present disclosure provide a technique capable of performing a uniform in-plane process of a substrate in an apparatus for processing the substrate while revolving the substrate.
- According to an embodiment of the present disclosure, there is provided a technique that includes: a substrate mounting plate on which a plurality of substrates are arranged in a circumferential direction; a rotator configured to rotate the substrate mounting plate; a gas supply structure disposed above the substrate mounting plate from a center to an outer periphery of the substrate mounting plate; a gas supplier including the gas supply structure and configured to control a supply amount of a gas supplied from the gas supply structure; a gas exhaust structure installed above the substrate mounting plate at a downstream side of the gas supply structure in a rotation direction; a gas exhauster including the gas exhaust structure and configured to control an exhaust amount of a gas exhausted from the gas exhaust structure; and a gas main component amount controller including the gas supplier and the gas exhauster and configured to control a gas main component amount in the gas supplied from the gas supply structure to the substrates, wherein the gas main component amount controller is further configured to control the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the substrate mounting plate.
-
FIG. 1 is an explanatory view for explaining a substrate processing apparatus according to a first embodiment of the present disclosure. -
FIG. 2 is an explanatory view for explaining the substrate processing apparatus according to the first embodiment. -
FIGS. 3A to 3C are explanatory views for explaining a gas supply part according to the first embodiment. -
FIG. 4 is an explanatory view for explaining a gas supply structure and a gas exhaust structure according to the first embodiment. -
FIG. 5 is an explanatory view for explaining the gas supply structure and the gas exhaust structure according to the first embodiment. -
FIG. 6 is an explanatory view for explaining a controller of the substrate processing apparatus according to the first embodiment. -
FIG. 7 is an explanatory view for explaining a substrate processing flow according to the first embodiment. -
FIG. 8 is an explanatory view for explaining the substrate processing flow according to the first embodiment. -
FIG. 9 is an explanatory view for explaining a state of a substrate to be processed in the first embodiment. -
FIG. 10 is an explanatory view for explaining a substrate processing apparatus according to a second embodiment of the present disclosure. -
FIG. 11 is an explanatory view for explaining a gas supply structure according to the second embodiment. -
FIG. 12 is an explanatory view for explaining a gas exhaust structure according to the second embodiment. -
FIG. 13 is an explanatory view for explaining the gas supply structure and the gas exhaust structure according to the second embodiment. -
FIG. 14 is an explanatory view for explaining a gas supply structure according to a third embodiment of the present disclosure. -
FIGS. 15A to 15C are explanatory views for explaining the gas supply structure according to the third embodiment. -
FIGS. 16A to 16C are explanatory views for explaining a relationship between the gas supply structure according to the third embodiment and supply of a gas to a substrate. - A first embodiment will be described with reference to the drawings. The configuration of a substrate processing apparatus according to a first embodiment of the present disclosure will be described mainly with reference to
FIGS. 1 and 2 .FIG. 1 is a schematic cross-sectional view of asubstrate processing apparatus 200 according to the first embodiment.FIG. 2 is a schematic longitudinal cross-sectional view of thesubstrate processing apparatus 200 according to the first embodiment, which is a cross-sectional view taken along a line α-α′ of achamber 302 illustrated inFIG. 1 . The line α-α′ is a line directing from α to α′ through a center of thechamber 302. - A specific configuration of the
substrate processing apparatus 200 will be described. Thesubstrate processing apparatus 200 is controlled by acontroller 400 to be described later. - As illustrated in
FIGS. 1 and 2 , thesubstrate processing apparatus 200 mainly includes thechamber 302 which is a cylindrical airtight container. Aprocess chamber 301 configured to process asubstrate 100 is formed in thechamber 302. Agate valve 305 is connected to thechamber 302, and thesubstrate 100 is loaded and unloaded through thegate valve 305. - The
process chamber 301 includes aprocessing region 306 into which a processing gas is supplied, and apurge region 307 into which a purge gas is supplied. In this embodiment, theprocessing region 306 and thepurge region 307 are alternately arranged in a circumferential direction. For example, afirst processing region 306 a, afirst purge region 307 a, asecond processing region 306 b and asecond purge region 307 b are arranged in this order. As will be described later, a first gas is supplied into thefirst processing region 306 a, a second gas is supplied into thesecond processing region 306 b, and an inert gas is supplied into thefirst purge region 307 a and thesecond purge region 307 b. Thus, a predetermined process is performed on thesubstrate 100 in accordance with the gas supplied into each region. Theprocessing region 306 a is also called a first domain, theprocessing region 306 b is also called a second domain, and thefirst purge region 307 a and thesecond purge region 307 b are also called purge domains. - The
purge region 307 is a region that spatially separates thefirst processing region 306 a and thesecond processing region 306 b from each other. Aceiling 308 of thepurge region 307 is configured to be lower than aceiling 309 of theprocessing region 306. Aceiling 308 a is provided in thefirst purge region 307 a, and aceiling 308 b is provided in thesecond purge region 307 b. By lowering each ceiling, the pressure in the space of thepurge region 307 is increased. By supplying a purge gas into this space,adjacent processing regions 306 are partitioned. Further, the purge gas also has a role of removing an excessive gas on thesubstrate 100. - A rotatable
substrate mounting plate 317 having its rotary shaft at the center of thechamber 302 is installed in the middle of thechamber 302. - The
substrate mounting plate 317 is configured such that a plurality of substrates 100 (for example, six substrates 100) can be arranged in thechamber 302 on the same plane and in the same circumferential direction along a rotation direction. The term “same plane” used herein is not limited to a completely same plane, but includes a case where a plurality ofsubstrates 100 are arranged so as not to overlap with each other when thesubstrate mounting plate 317 is viewed from above. - A
concave portion 318′ is formed at a position where thesubstrate 100 is supported on the surface of thesubstrate mounting plate 317. The same number ofconcave portions 318′ as the number ofsubstrates 100 to be processed are arranged at equal intervals (for example, at intervals of 60 degrees) at concentric positions from the center of thesubstrate mounting plate 317. InFIG. 1 , illustration thereof is omitted for convenience of explanation. - Each
concave portion 318′ is, for example, circular when viewed from the top of thesubstrate mounting plate 317 and is concave when viewed from the side thereof. The diameter of theconcave portion 318′ may be set to be slightly larger than the diameter of thesubstrate 100. Asubstrate mounting surface 319 is formed at the bottom of theconcave portion 318′, and thesubstrate 100 can be mounted on thesubstrate mounting surface 319 by mounting thesubstrate 100 in theconcave portion 318′. - The
substrate mounting plate 317 is fixed to acore 321. Thecore 321 is installed at the center of thesubstrate mounting plate 317 and has a role of fixing thesubstrate mounting plate 317. Ashaft 322 is disposed below thecore 321. Theshaft 322 supports thecore 321. - The lower part of the
shaft 322 passes through ahole 323 formed at the bottom of thechamber 302 and is covered with acontainer 304 that can be airtight outside thechamber 302. An elevating/rotating part 318 is installed at the lower end of theshaft 322. When theshaft 322 is not elevated, the elevating/rotating part 318 is simply referred to as a rotating part (or rotator) 318. The elevating/rotating part 318 is configured to rotate and elevate thesubstrate mounting plate 317 according to an instruction from thecontroller 400. - A
heater unit 381 including aheater 380 as a heating part is disposed below thesubstrate mounting plate 317. Theheater 380 heats each of thesubstrates 100 mounted on thesubstrate mounting plate 317. Theheater 380 is disposed circumferentially along the shape of thechamber 302. - A
heater control part 387 is connected to theheater 380. Theheater 380 is electrically connected to thecontroller 400 and controls supply of power to theheater 380 according to an instruction from thecontroller 400 to perform temperature control. - An
exhaust structure 386 is disposed on the outer periphery of thesubstrate mounting plate 317. Theexhaust structure 386 includes anexhaust groove 388 and anexhaust buffer space 389. Theexhaust groove 388 and theexhaust buffer space 389 are formed circumferentially along the shape of thechamber 302. - An
exhaust port 392 is installed at the bottom of theexhaust structure 386. Theexhaust port 392 mainly exhausts the second gas supplied into theprocessing space 306 b and the purge gas supplied from the upstream thereof. Each gas is exhausted from the exhaust structure 391 and theexhaust port 392 via theexhaust groove 388 and theexhaust buffer space 389. - Subsequently, a gas supply part (or a gas supplier) will be described. As illustrated in
FIG. 1 , thechamber 302 includes agas supply structure 410. Thegas supply structure 410 is disposed above thesubstrate mounting plate 317. Further, thechamber 302 includesnozzles FIG. 1 is connected to “A” inFIG. 3A . That is, thegas supply structure 410 is connected to asupply pipe 241. “B” inFIG. 1 is connected to “B” inFIG. 3B . That is, thenozzle 355 is connected to asupply pipe 251. “C” inFIG. 1 is connected to “C” inFIG. 3C . That is, thenozzles supply pipe 261. - Subsequently, the gas supply part will be described with reference to
FIGS. 3A to 3C .FIG. 3A illustrates a firstgas supply part 240 which is a part of the gas supply part. The details thereof will be described with reference toFIG. 3A . The first gas is mainly supplied from the firstgas supply pipe 241. - At the first
gas supply pipe 241, a firstgas supply source 242, anMFC 243, which is a flow rate controller (flow rate control part), and avalve 244 which is an opening/closing valve are installed in order from the upstream side. - A gas containing a first element (hereinafter referred to as the “first gas”) is supplied from the first
gas supply pipe 241 to a shower head 230 via theMFC 243, thevalve 244 and the firstgas supply pipe 241. - The first gas is a precursor gas, that is, one of processing gases. In this embodiment, the first element is, for example, silicon (Si). That is, the first gas is a Si gas (also referred to as a Si-containing gas), which is a gas containing Si as a main component. Specifically, a dichlorosilane (SiH2Cl2, abbreviation: DCS) gas is used as the first gas.
- If the first gas is liquid at normal temperature and normal pressure, a vaporizer (not shown) may be installed between the first
gas supply source 242 and theMFC 243. Here, the description will be made with the first gas as a gas. - The first
gas supply part 240 mainly includes the firstgas supply pipe 241, theMFC 243, thevalve 244 and thegas supply structure 410. Further, the firstgas supply part 240 may include the firstgas supply source 242. - Subsequently, a second
gas supply part 250 which is a part of the gas supply part will be described with reference toFIG. 3B . At the secondgas supply pipe 251, a secondgas supply source 252, anMFC 253, which is a flow rate controller, and avalve 254 are installed in order from the upstream side. - Then, a reaction gas reacting with the first gas is supplied from the second
gas supply pipe 251 into the shower head 230. The reaction gas is also called a second gas. The second gas is one of the processing gases, for example, a nitrogen-containing gas containing nitrogen as a main component. For example, an ammonia (NH3) gas is used as the nitrogen-containing gas. - The second
gas supply part 250 mainly includes the secondgas supply pipe 251, theMFC 253, thevalve 254 and thenozzle 355. Since the secondgas supply part 250 is configured to supply the reaction gas, it is also referred to as a reaction gas supply part. Further, the secondgas supply part 250 may include the secondgas supply source 252. - Subsequently, a purge
gas supply part 260 which is a part of the gas supply part will be described with reference toFIG. 3C . At the purgegas supply pipe 261, a purgegas supply source 262, anMFC 263, which is a flow rate controller (flow rate control part), and avalve 264 are installed in order from the upstream side. - Then, a purge gas is supplied from the purge
gas supply pipe 261 into the shower head 230. The purge gas is a gas that does not react with the first gas or the second gas, which is one of purge gases for purging the internal atmosphere of the process chamber 201, for example, a nitrogen (N2) gas. - The purge
gas supply part 260 mainly includes the purgegas supply pipe 261, theWC 263, thevalve 264, thenozzle 365 and thenozzle 366. The purgegas supply part 260 may include the purgegas supply source 262. - The first
gas supply part 240, the secondgas supply part 250 and the purgegas supply part 260 are collectively referred to as a gas supply part. - Next, a gas exhaust part (or gas exhauster) will be described. The
chamber 302 is provided with agas exhaust structure 420 and anexhaust port 392. Thegas exhaust structure 420 is disposed above thesubstrate mounting plate 317. Anexhaust pipe 334 a is installed so as to communicate with thegas exhaust structure 420. Avacuum pump 334 b, which is a vacuum exhaust device, is connected to theexhaust pipe 334 a via avalve 334 d, which is an opening/closing valve, and an auto pressure controller (APC)valve 334 c which is a pressure regulator (pressure adjustment part). Thevacuum pump 334 b is configured to vacuum-exhaust the interior of theprocess chamber 301 so that the internal pressure of theprocess chamber 301 becomes a predetermined pressure (degree of vacuum). - The
exhaust pipe 334 a, thevalve 334 d, theAPC valve 334 c and thegas exhaust structure 420 are collectively referred to as a firstgas exhaust part 334. The firstgas exhaust part 334 may include thevacuum pump 334 b. - In addition, a second
gas exhaust part 335 is installed so as to communicate with theexhaust port 392. Theexhaust port 392 is formed on the downstream side of theprocessing region 306 b in the rotation direction. The secondgas exhaust part 335 mainly exhausts the second gas and the inert gas. - An
exhaust pipe 335 a, which is a part of the secondgas exhaust part 335, is installed so as to communicate with theexhaust port 392. Avacuum pump 335 b, which is a vacuum exhaust device, is connected to theexhaust pipe 335 a via avalve 335 d, which is an opening/closing valve, and anAPC valve 335 c which is a pressure regulator (pressure adjustment part). Thevacuum pump 335 b is configured to vacuum-exhaust the interior of theprocess chamber 301 so that the internal pressure of theprocess chamber 301 becomes a predetermined pressure (degree of vacuum). - The
exhaust pipe 335 a, thevalve 335 d and theAPC valve 335 c are collectively referred to as a secondgas exhaust part 335. The secondgas exhaust part 335 may include thevacuum pump 335 b. - The first
gas supply part 240 and the firstgas exhaust part 334 are collectively referred to as a first gas main component amount control part (or a first gas main component amount controller). The first gas main component amount control part controls an amount of gas main component in the first gas supplied to the substrate that passes below thegas supply structure 410 and thegas exhaust structure 420 by using one of the firstgas supply part 240 and the firstgas exhaust part 334 or interlocking of the twoparts - The second
gas supply part 250 and the secondgas exhaust part 335 are collectively referred to as a second gas main component amount control part (or a second gas main component amount controller). The second gas main component amount control part controls an exposure amount of the second gas supplied to the substrate that passes below thenozzle 355 by using one of the secondgas supply part 250 and the secondgas exhaust part 335 or interlocking of the twoparts - Next, a relationship between the
gas supply structure 410 and thegas exhaust structure 420 will be described with reference toFIGS. 1, 4 and 5 .FIG. 4 is an explanatory view of thegas supply structure 410 and thegas exhaust structure 420 as viewed from the outer periphery of thesubstrate mounting plate 317 toward the center thereof “R” inFIG. 4 is the same as “R” inFIG. 1 and denotes the rotation direction of thesubstrate mounting plate 317. -
FIG. 5 is an explanatory view of thegas supply structure 410 and thegas exhaust structure 420 as viewed from above. InFIG. 5 , the direction of an arrow C indicates the center side of thesubstrate mounting plate 317, and the direction of an arrow E indicates the outer peripheral side of thesubstrate mounting plate 317. “R” inFIG. 5 is the same as “R” inFIG. 1 and denotes the rotation direction of thesubstrate mounting plate 317. InFIG. 5 , W1, W2 and W3 denote arbitrary locations on thesubstrate 100. W2 denotes the center position of thesubstrate 100, W1 denotes a position of thesubstrate 100 closer to the center side of thesubstrate mounting plate 317 than W2, and W3 denotes a position of thesubstrate 100 closer to the outer periphery of thesubstrate mounting plate 317 than W2. - The
gas supply structure 410 mainly includes ahousing 411. Abuffer space 412 is formed inside thehousing 411. Ahole 413 is formed above thebuffer space 412, and ahole 414 is formed below thebuffer space 412. Thehole 413 communicates with thesupply pipe 241. A gas supplied from the firstgas supply part 240 is supplied to thesubstrate 100 via thehole 413, thebuffer space 412 and thehole 414. - The
gas exhaust structure 420 mainly includes ahousing 421. Abuffer space 422 is formed inside thehousing 421. Ahole 423 is formed below thebuffer space 422, and ahole 424 is formed above thebuffer space 422. Thehole 424 communicates with the firstgas exhaust part 334. A gas supplied from thegas supply structure 410 is exhausted through thehole 423, thebuffer space 422 and thehole 424. - As illustrated in
FIG. 5 , when thegas supply structure 410 is viewed from above, thehousing 411 is formed in a U-shape with thegas exhaust structure 420 side released. As indicated by a dotted line inFIG. 5 , thehole 414 is formed along the outer peripheral shape of thesubstrate 100. Thehole 414 has a U-shape with theexhaust structure 420 side released in the same manner as thehousing 411. In this embodiment, a continuous hole shape is used. However, a structure in which a plurality of holes are arranged along the outer periphery of thesubstrate 100 may be used. - When the
gas exhaust structure 420 is viewed from above, thehousing 421 is formed in a U-shape with thegas supply structure 410 side released. Thehole 423 is formed along the shape of thehousing 421. As indicated by a dotted line inFIG. 5 , thehole 423 is formed along the outer peripheral shape of thesubstrate 100. Thehole 423 has a U-shape with thesupply structure 410 side released, in the same manner as thehousing 421. In this embodiment, a continuous hole shape is used. However, a structure in which a plurality of holes are arranged along the outer periphery of the substrate may be used. - As will be described later, the
substrate 100 is in a state where many grooves are formed. In this case, a film is formed on the surface of a pillar that forms a wall of the groove. The grooves are formed on the entire surface of thesubstrate 100. Therefore, when the surface of thesubstrate 100 is divided into a plurality of regions in a direction perpendicular to a moving direction of thesubstrate 100, the surface area is different between a middle region of thesubstrate 100 and a lateral region of thesubstrate 100. InFIG. 5 , the surface area is different among alateral region 110, which is on the center side of thesubstrate mounting plate 317 and includes the point W1, amiddle region 120, which includes the point W2, and alateral region 110 which is on the outer peripheral side of thesubstrate mounting plate 317 and includes the point W3. - More specifically, the surface area of the
middle region 120 is larger than the surface area of each of thelateral regions substrate 100 in themiddle region 120 is larger than a length of the moving direction of thesubstrate 100 in thelateral regions - As a result of intensive studies, the inventors have found that a gas consumption is proportional to the surface area of the
substrate 100. Therefore, theregion 120 having the largest surface area has the largest gas consumption. Theregion 110 and theregion 120 have a gas consumption smaller than that of theregion 120. - Therefore, in the present technique, a gas supply amount, that is, an amount of the main component of the gas is set according to the gas consumption. Specifically, in the
substrate 100, the distance between thehole 414 of thegas supply structure 410 and thehole 423 of the gas exhaust structure is set to a distance corresponding to the length of thesubstrate 100 so that a gas supply time according to the length in the moving direction is obtained. - For example, in the
region 120, a distance between thehole 414 and the hole 423 (a distance Lb between 414 b and 423 b inFIG. 5 , also referred to as a first distance) is set to a predetermined distance corresponding to the length of theregion 120. Further, in theregion 110, a distance between thehole 414 and the hole 423 (a distance La between 414 a and 423 a inFIG. 5 , also referred to as a second distance) is set to a distance corresponding to the length of theregion 110. As described above, since the surface area of theregion 120 is larger than that of theregion 110, the distance La is smaller than the distance Lb. - When the width of the
region 110 is equal to the width of theregion 130, the distance La is set to be equal to a distance Lc. - In this way, since the distance between the supply hole and the exhaust hole is set in accordance with the length of the
substrate 100 in the traveling direction, a gas does not run out in any region on the substrate, and therefore, it is possible to perform uniform processing in the surface of the substrate. - Subsequently, the
controller 400 will be described with reference toFIG. 6 . Thesubstrate processing apparatus 200 includes thecontroller 400 that controls operations of respective parts of thesubstrate processing apparatus 200. Thecontroller 400 includes at least an arithmetic part (CPU) 401, anon-transitory storage part 402, astorage part 403 and a transmitting/receivingpart 404. Thecontroller 400 is connected to the respective parts of thesubstrate processing apparatus 200 via the transmitting/receivingpart 404, calls a program or a recipe from thestorage part 403 in accordance with an instruction from a higher-level controller or a user, and controls the operations of the respective parts according to contents of the called program or recipe. Thecontroller 400 may be configured as a dedicated computer or a general-purpose computer. For example, thecontroller 400 according to the present embodiment may be configured by providing an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory (USB Flash Drive) or a memory card, etc.) 412 storing the above-described program and installing, on the general-purpose computer, a program using the external storage device 512. The means for supplying the program to the computer is not limited to the case where the program is supplied via the external storage device 512. For example, a communication means such as the Internet or a dedicated line may be used, or information may be received from ahost device 520 via the transmitting/receivingpart 404 and the program may be supplied without passing through the external storage device 512. Further, thecontroller 400 may be instructed using an input/output device 513 such as a keyboard or a touch panel. - The
storage part 402 and the external storage device 512 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. In the present disclosure, when the term “recording medium” is used, it may include thestorage part 402 alone, the external storage device 512 alone, or both. - Next, a substrate processing flow will be described with reference to
FIGS. 7 and 8 .FIG. 7 is a flowchart illustrating a substrate processing flow according to the present embodiment.FIG. 8 is a flowchart illustrating details of a film-forming step S330. In the following description, the operations of respective parts of thesubstrate processing apparatus 200 are controlled by thecontroller 400. - Here, an example in which a silicon-containing gas is used as the first gas, an ammonia gas is used as the second gas, and a silicon nitride (SiN) film is formed as a thin film on the
substrate 100 will be described. - A substrate loading/mounting step will be described. Illustration thereof is omitted in
FIG. 7 . Thesubstrate mounting plate 317 is rotated to move theconcave portion 318′ to a position facing thegate valve 305. Next, lift pins (not shown) are lifted up to pass through through-holes (not shown) of thesubstrate mounting plate 317. Subsequently, thegate valve 305 is opened such that thechamber 302 communicates with a vacuum transfer chamber (not shown). Then, thesubstrate 100 is transferred from the transfer chamber onto the lift pins using a wafer transfer device (not shown), and then the lift pins are moved down. As a result, thesubstrate 100 is held in a horizontal posture on theconcave portion 318′. - As illustrated in
FIG. 9 , a plurality ofpillars 101 and extremelynarrow grooves 102 each having a high aspect ratio and formed between thepillars 101 are formed in the loadedsubstrate 100. In this substrate processing flow, a film is formed on a surface of thepillar 101. - When the
substrate 100 is supported on theconcave portion 318′, thesubstrate mounting plate 317 is rotated so that aconcave portion 318′ on which thesubstrate 100 is not mounted faces thegate valve 305. Thereafter, similarly, the substrate is placed on theconcave portion 318′. The flow is repeated until thesubstrate 100 is placed on all theconcave portions 318′. - After the
substrate 100 is placed on each of theconcave portions 318′, the substrate transfer device is retracted outside thesubstrate processing apparatus 200, and thegate valve 305 is closed to seal the interior of thechamber 302. - When the
substrate 100 is mounted on thesubstrate mounting plate 317, electric power is supplied to theheater 380 in advance to control the surface of thesubstrate 100 to be at a predetermined temperature. The temperature of thesubstrate 100 is, for example, 400 degrees C. or more and 500 degrees C. or less. Theheater 380 is kept energized at least in a period from the time of the substrate loading/mounting step to the end of a substrate unloading step to be described later. - A substrate mounting plate rotation starting step S310 will be described. When the
substrate 100 is placed in eachconcave portion 318′, therotating part 324 rotates thesubstrate mounting plate 317 in the R direction. By rotating thesubstrate mounting plate 317, thesubstrate 100 is moved in the order of thefirst processing region 306 a, thefirst purge region 307 a, thesecond processing region 306 b and thesecond purge region 307 b. - A gas supply starting step S320 will be described. When the
substrate 100 is heated to reach a desired temperature and thesubstrate mounting plate 317 reaches a desired rotation speed, thevalve 244 is opened to start supplying a silicon-containing gas into thefirst processing region 306 a. At the same time, thevalve 254 is opened to supply an NH3 gas into thesecond processing region 306 b. - At this time, the
MFC 243 is adjusted so that a flow rate of the silicon-containing gas becomes a predetermined flow rate. The supply flow rate of the silicon-containing gas is, for example, 50 sccm or more and 500 sccm or less. - In addition, the
MFC 253 is adjusted so that the flow rate of the NH3 gas becomes a predetermined flow rate. The supply flow rate of the NH3 gas is, for example, 100 sccm or more and 5,000 sccm or less. - After the substrate loading/mounting step S310, subsequently, the interior of the
process chamber 301 is exhausted by the firstgas exhaust part 334 and the secondgas exhaust part 335, and an N2 gas as a purge gas is supplied from the inertgas supply part 260 into thefirst purge region 307 a and thesecond purge region 307 b. - A film-forming step S330 will be described. Here, a basic flow of the film-forming step S330 will be described, and the details thereof will be described later. In the film-forming step S330, in each
substrate 100, a silicon-containing layer is formed in thefirst processing region 306 a, and further, the silicon-containing layer reacts with the NH3 gas in the rotatedsecond processing region 306 b to thereby form a silicon-containing film on thesubstrate 100. Thesubstrate mounting plate 317 is rotated a predetermined number of times so that the silicon-containing film has a desired film thickness. - A gas supply stopping step S340 will be described. After the
substrate mounting plate 317 is rotated the predetermined number of times, thevalves first processing region 306 a and the supply of the NH3 gas into thesecond processing region 306 b. - A substrate mounting plate rotation stopping step S350 will be described. After the gas supply stopping step S340, the rotation of the
substrate mounting plate 317 is stopped. - A substrate unloading step will be described. Illustration thereof is omitted in
FIG. 7 . The substrate mounting plate is rotated to move thesubstrate 100 to be unloaded to a position facing thegate valve 305. After that, the substrate is unloaded in reverse as compared with the method of loading the substrate. These operations are repeated until all thesubstrates 100 are unloaded. - Subsequently, the details of the film-forming step S330 will be described with reference to
FIG. 8 .FIG. 8 is a flowchart with one substrate as the subject. During the film-forming step S330, a plurality ofsubstrates 100 are sequentially passed through thefirst processing region 306 a, thefirst purge region 307 a, thesecond processing region 306 b and thesecond purge region 307 b by the rotation of thesubstrate mounting plate 317. - A first gas supplying step S202 will be described. In the first gas supplying step S202, a silicon-containing gas is supplied to the
substrate 100 when thesubstrate 100 passes through thefirst processing region 306 a. The supplied silicon-containing gas is decomposed to form a silicon-containing layer in thegroove 102. - A first purge step S204 according to the present embodiment will be described. The
substrate 100 is moved to thefirst purge region 307 a after passing through thefirst processing region 306 a. When thesubstrate 100 passes through thefirst purge region 307 a, the component 104 of the silicon-containing gas that could not form a strong coupling on thesubstrate 100 in thefirst processing region 306 a is removed from thesubstrate 100 by an inert gas. - A second gas supplying step S206 will be described. The
substrate 100 is moved to thesecond processing region 306 b after passing through thefirst purge region 307 a. The silicon-containing gas component in thegroove 102 reacts with the NH3 gas component, and a cut silicon-containing gas component and the NH3 gas component are coupled to form a silicon-containing layer having a degree of coupling. - A second purge step S208 will be described. After passing through the
second processing region 306 b, thesubstrate 100 is moved to thesecond purge region 307 b. When thesubstrate 100 passes through thesecond purge region 307 b, a HCl or NH4Cl gas desorbed from the layer on thesubstrate 100 in the second processing region 306 c or a surplus gas is removed from thesubstrate 100 by an inert gas. - In this way, at least two second gases that react with each other are sequentially supplied to the substrate. The above-described first gas supplying step S202, first purge step S204, second gas supplying step S206 and second purge step S208 are defined as one cycle.
- A determining step S210 will be described. The
controller 400 determines whether the one cycle has been performed a predetermined number of times. Specifically, thecontroller 400 counts the number of rotations of thesubstrate mounting plate 317. - When the one cycle has not been performed a predetermined number of times (“NO” in S210), the rotation of the
substrate mounting plate 317 is further continued to repeat the cycle including the first gas supplying step S202, the first purge step S204, the second gas supplying step S206 and the second purge step S208. A thin film is formed by laminating layers in this manner. - When the one cycle has been performed a predetermined number of times (“YES” in S210), the film-forming step S330 is ended. In this manner, by performing the one cycle a predetermined number of times, a laminated thin film having a predetermined thickness is formed. Thus, a film is formed in the
groove 102. - As described above, since the amount (i.e., concentration) of gas main component can be adjusted according to the state of the substrate (the surface area of the substrate in this embodiment), uniform processing can be performed on the surface of the substrate, which can lead to increase in yield.
- The
gas supply structure 410 and thegas exhaust structure 420 may be replaceable according to the state of the substrate. For example, when information on the surface area of a substrate to be processed next is received, thegas supply structure 410 and thegas exhaust structure 420 are replaced according to the surface area. - Subsequently, a second embodiment will be described. The second embodiment is different from the first embodiment in terms of the gas supply structure and the gas exhaust structure of the
processing region 306 a. Other configurations are the same. Hereinafter, the differences will be mainly described. - In the second embodiment, as illustrated in
FIG. 10 , agas supply structure 430 is used as the gas supply structure of theprocessing region 306 a. Further, agas exhaust structure 440 is used as the gas exhaust structure. - Subsequently, an apparatus configured to revolve the
substrate 100 such as thesubstrate processing apparatus 200 will be described. As a result of intensive studies, the inventors have found that in the case of a revolution type apparatus, a concentration of a gas supplied to the substrate differs between the center side and the outer peripheral side of thesubstrate mounting plate 317. This is presumably because the moving speed of the substrate is different between an arbitrary point on the center side and an arbitrary point on the outer peripheral side. - To explain with reference to
FIG. 13 , than the moving distance of an arbitrary point W3 on the outer peripheral side of thesubstrate 100 is larger than the moving distance of an arbitrary point W1 on the center side of thesubstrate 100. This is because the point W3 moves faster than the point W1. When the gas supply amount on the center side of thesubstrate mounting plate 317 is equal to the gas supply amount on the outer peripheral side of thesubstrate mounting plate 317, since the gas supply time of the point W3 becomes short under a supply hole, the point W3 is shorter in the gas supply time than the point W1. As a result, a gas concentration at the point W3 is lower than a gas concentration at the point W1. - If the gas concentration, especially a concentration of gas main component, is different, the state of film such as a film thickness or the concentration of gas main component in the film may be different. This is because the amount of gas main component is different. Therefore, the yield may be reduced.
- The technique according to the present embodiment is a technique for making the amount of gas main component uniform on the center side and the outer peripheral side of the
substrate mounting plate 317, and specific examples thereof will be described below with a specific example thereof. - The
gas supply structure 430 will be described with reference toFIG. 11 . Thegas supply structure 430 includes asupply buffer structure 431 and asupply pipe 432 connected thereto. A plurality ofsupply buffer structures 431 are installed in the radial direction of thesubstrate mounting plate 317. InFIG. 11 ,supply buffer structures substrate mounting plate 317. - A
hole 436 is formed in the lower surface of thesupply buffer structure 431. A gas in thesupply buffer structure 431 is supplied toward thesubstrate mounting plate 317 through thehole 436. Thesupply pipes 432 are installed corresponding to the respectivesupply buffer structures 431. Asupply buffer structure 431 a has ahole 436 a to which asupply pipe 432 a is connected. Asupply buffer structure 431 b has ahole 436 b to which asupply pipe 432 b is connected. Asupply buffer structure 431 c has ahole 436 c to which asupply pipe 432 c is connected. Thesupply buffer pipes 431 merges in the upstream and is connected to ajunction pipe 433. Thejunction pipe 433 is connected to the firstgas supply part 240. - At the
supply pipe 432, anMFC 434 and avalve 435 are installed from the upstream side. AnMFC 434 a and avalve 435 a are installed at thesupply pipe 432 a, anMFC 434 b and avalve 435 b are installed at thesupply pipe 432 b, and anMFC 434 c and avalve 435 c are installed at thesupply pipe 432 c, respectively. - With this configuration, the gas supply amount of the gas to be supplied to the
substrate 100, that is, the amount of gas main component, can be controlled for eachsupply buffer structure 431. - Subsequently, the
gas exhaust structure 440 will be described with reference toFIG. 12 . Thegas exhaust structure 440 includes anexhaust buffer structure 441 and anexhaust pipe 442 connected thereto. A plurality ofexhaust buffer structures 441 are installed in the radial direction of thesubstrate mounting plate 317. InFIG. 12 ,exhaust buffer structures substrate mounting plate 317. - A hole 446 is formed in the lower surface of the
exhaust buffer structure 441. A gas under theexhaust buffer structure 441 is moved into theexhaust buffer structure 441 through the hole 446. Theexhaust pipes 442 are installed corresponding to the respectiveexhaust buffer structures 441. Specifically, anexhaust buffer structure 441 a has ahole 446 a to which anexhaust pipe 442 a is connected. Anexhaust buffer structure 441 b has ahole 446 b to which anexhaust pipe 442 b is connected. Anexhaust buffer structure 441 c has ahole 446 c to which anexhaust pipe 442 c is connected. Therespective exhaust pipes 442 are joined in the downstream and are connected to ajunction pipe 443. Thejunction pipe 443 is connected to the firstgas exhaust part 334. - At the
exhaust pipe 442, avalve 444 and anAPC valve 445 may be installed from the upstream side. Avalve 444 a and anAPC valve 445 a may be installed at theexhaust pipe 442 a, avalve 444 b and anAPC valve 445 b may be installed at theexhaust pipe 442 b, and avalve 444 c and anAPC valve 445 c may be installed at theexhaust pipe 442 c. - With this configuration, the amount of gas exhausted can be controlled for each
exhaust buffer structure 441. - Next, the relationship between the
hole 436 of thesupply buffer structure 431 and the hole 446 of theexhaust buffer structure 441 will be described with reference toFIG. 13 . In the figure, W1, W2 and W3 denote arbitrary points on the substrate. An arbitrary point W1 indicates a point on the center side of thesubstrate mounting plate 317 in thesubstrate 100. An arbitrary point W2 indicates a point on the outer peripheral side of thesubstrate mounting plate 317 with respect to W1. An arbitrary point W3 indicates a point on the outer peripheral side of thesubstrate mounting plate 317 in thesubstrate 100 with respect to W2. A revolution orbit Ra indicates the orbit of the arbitrary point W1, a revolution orbit Rb indicates the orbit of the arbitrary point W2, and a revolution orbit Rc indicates the orbit of the arbitrary point W3. - As illustrated in
FIG. 13 , theholes 436 and the holes 446 correspond to each other on the revolution orbit of thesubstrate 100. Specifically, thehole 436 a and thehole 446 a correspond to each other on the revolution orbit Ra of the arbitrary point W1. Thehole 436 b and thehole 446 b correspond to each other on the revolution orbit Rb of the arbitrary point W2. Thehole 436 c and thehole 446 c correspond to each other on the revolution orbit Rc of the arbitrary point W3. - As described above, since the gas supply amount can be controlled in each
supply buffer structure 431 and a gas exhaust amount can be controlled in eachexhaust buffer structure 441, a gas flow can be individually formed between the correspondingsupply buffer structure 431 andexhaust buffer structure 441, and the gas supply amount to thesubstrate 100 can be controlled. That is, the gas supply amount can be individually controlled on the center side and the outer peripheral side of thesubstrate mounting plate 317. Therefore, the amounts of gas main components can be individually controlled. - With such a structure, the gas supply amount on the outer peripheral side where the moving distance thereof is long can be made larger than that on the center side where the moving distance thereof is short. That is, at any point on the substrate, the supply amount of main component of a gas to be exposed can be made equal between the outer peripheral side and the center side. This can result in improvement in in-plane uniformity of the
substrate 100 and increase in yield. - Further, since the moving distance of the
substrate 100 gradually increases from the center to the outer periphery of thesubstrate mounting plate 317, for example, three or moresupply buffer structures 431 and three or moreexhaust buffer structures 441 may be installed as illustrated inFIG. 13 . In this case, the gas supply amount corresponding to the moving distance can be more precisely controlled. - Since such control is possible, it is possible to process substrates having different surface areas. For example, even for a substrate having a larger surface area and a substrate having a smaller surface area, a supply amount of gas main component can be controlled according to their respective states.
- In this case, a table obtained by comparing the state of the substrate with the supply amount of gas main component is stored in the
storage part 403 in advance. Information on the state of asubstrate 100 to be processed next, for example, surface area information, is received from thehost device 520 and stored in thestorage part 403. TheCPU 401 compares the information with the table, reads a control value of the gas main component amount control part (or the gas main component amount controller) according to the information, and controls the gas main component amount control part. - In this way, even when substrates having different surface areas are processed, the in-plane uniformity of the substrate in each state can be improved, which can result in the increase in yield.
- In the present disclosure, the substrate having the larger surface area refers to, for example, a substrate having a large number of circuit patterns such as a plurality of deep grooves, and the substrate having the small surface area refers to, for example, a substrate having a small number of circuit patterns such as a plurality of relatively shallow grooves.
- Subsequently, a third embodiment will be described with reference to
FIGS. 14, 15A to 15C, and 16A to 16C . The third embodiment is different from the second embodiment in terms of the supply buffer structure in the apparatus form. Others have the same structure. Hereinafter, the differences will be mainly described. InFIG. 14 , the direction of an arrow C indicates the center direction of thesubstrate mounting plate 317, and the direction of an arrow E indicates the outer peripheral direction of thesubstrate mounting plate 317. InFIG. 14 , the rear side is an upstream side in the rotation direction, and the front side is a downstream side in the rotation direction. -
FIGS. 15A to 15C are explanatory views illustrating a relationship between asupply buffer structure 451 and ahole 456 to be described below.FIG. 15A illustrates asupply buffer structure 451 a,FIG. 15B illustrates asupply buffer structure 451 b, andFIG. 15C illustrates asupply buffer structure 451 c. InFIGS. 15A to 15C , “R” denotes the rotation direction of thesubstrate mounting plate 317. Thesubstrate 100 is moved below eachsupply buffer structure 451 in the R direction. -
FIGS. 16A to 16C are explanatory views illustrating a relationship between eachsupply hole 456 and the concentration of the gas supplied to thesubstrate 100. The gas concentration is also referred to as a concentration of gas main component. In the figure, reference numeral 460 denotes a gas supplied from thehole 456. Further, in the gas 460, a portion having a high concentration closest to thehole 456 is denoted by 461, and portions denoted by 462 and 463 are sequentially set as a distance from thehole 456 increases. Since the gas 460 diffuses as the gas moves away from thehole 456, the gas concentration also decreases as the gas moves away from thesupply hole 456. Therefore, the gas concentration becomes 461>462>463. - In
FIGS. 16A to 16C , thesubstrate 100 is moved in the R direction under eachbuffer structure 451. Here, the point W1 passes under thebuffer structure 451 a, the point W2 passes under thebuffer structure 451 b, and the point W3 passes below thebuffer structure 451 c. - As described above, the point W1 indicates a point in the
substrate 100 on the center side of thesubstrate mounting plate 317. The point W2 indicates a point in thesubstrate 100 on the outer peripheral side of thesubstrate mounting plate 317 with respect to W1. The point W3 indicates a point in thesubstrate 100 on the outer peripheral side of thesubstrate mounting plate 317 with respect to W2. - Next, a specific structure will be described. Similar to the
supply buffer structure 431, a plurality ofsupply buffer structures 451 are installed from the center to the outer periphery of thesubstrate mounting plate 317. InFIG. 14 , from the center side, thesupply buffer structure 451 a, thesupply buffer structure 451 b and thesupply buffer structure 451 c are installed in this order. - Each
supply buffer structure 451 is connected to thesupply pipe 432. Thesupply pipe 432 a is connected to thesupply buffer structure 451 a, thesupply pipe 432 b is connected to thesupply buffer structure 451 b, and thesupply pipe 432 c is connected to thesupply buffer 451 c. - Each
supply buffer structure 451 has thehole 456. Thesupply buffer structure 451 a has ahole 456 a, thesupply buffer structure 451 b has ahole 456 b, and thesupply buffer structure 451 c has ahole 456 c. A gas supplied to thesupply buffer structure 451 is supplied to thesubstrate 100 via thehole 456. - As illustrated in
FIGS. 15A to 15C , the openings of theholes 456 are formed at different inclination angles with respect to the surface of thesubstrate 100. For example, thehole 456 a is formed to be parallel to the surface of thesubstrate 100 or face toward thesubstrate mounting plate 317. Thehole 456 c is formed to face toward a direction perpendicular to the surface of thesubstrate 100. Thehole 456 b is formed to have an angle between the angle of thehole 456 a and the angle of thehole 456 c. In this way, the opening direction of thehole 456 gradually face toward the surface of the substrate from the center to the outer periphery. - Subsequently, the concentration of the gas supplied to the
substrate 100 in the above configuration will be described with reference toFIGS. 16A to 16C . As illustrated inFIGS. 16A to 16C , a distance between thesupply hole 456 and thesubstrate 100 decreases as thesupply hole 456 faces toward thesubstrate 100. As described above, the gas concentration increases as a distance from the supply hole decreases. InFIGS. 16A to 16C , since thesupply hole 456 is closest to thesubstrate 100 in (c) and farthest from thesubstrate 100 in (a), when thesupply buffer structure 451 a, thesupply buffer structure 451 b, and thesupply buffer structure 451 c are at the same height as illustrated inFIG. 14 , the concentration of the gas supplied to thesubstrate 100 may be (c)>(b)>(a). - As described above, in the revolution type apparatus, when the center side and the outer peripheral side of the
substrate mounting plate 317 have the same supply amount, the amount of gas main component on the outer peripheral side decreases. - In the present embodiment, the gas concentration at the point W1 is controlled to be lower than the gas concentration at the point W3, and the supply amounts of gas main components at the points W1 and W3 are controlled to be the same. Thus, a process in the plane of the
substrate 100 can be made uniform. Therefore, a film quality such as a film thickness and a concentration of main component in the film can be made uniform, which can result in the increase in yield. - Since such control is possible, it is possible to process substrates having different surface areas. For example, even for a substrate having a larger surface area and a substrate having a smaller surface area, the supply amount of gas main component can be controlled according to their respective states.
- In this case, a table obtained by comparing the state of the substrate with the supply amount of gas main component is stored in the
storage part 403 in advance. Information on the state of asubstrate 100 to be processed next, for example, surface area information, is received from thehost device 520 and stored in thestorage part 403. TheCPU 401 compares the information with the table, and reads a control value gas of the gas main component amount control part according to the information, and controls the gas main component amount control part. - In this way, even when the substrates having different surface areas are processed, the in-plane uniformity of the substrate in each state can be improved, which can result in the increase in yield.
- The first to third embodiments of the present disclosure have been specifically described above. However, the present disclosure is not limited to the above-described embodiments, but may be modified in different ways without departing from the spirit and scope of the present disclosure.
- In the present disclosure, a structure in which the
gas supply structure 410 and thegas exhaust structure 420 are disposed in the first processing region and a configuration corresponding to thegas supply structure 410 and thegas exhaust structure 420 is not disposed in thesecond processing region 306 b has been described as an example. This is because the reaction gas supplied to the second processing region has the following properties as an example. That is, this is an example in which the reaction gas has a property of being saturated or a property close to saturation when reacting with the precursor gas supplied to the first processing region. - Therefore, when the reaction gas has a property of being not saturated when reacting with the precursor gas, particularly a property that is far from the saturation, the configuration corresponding to the
gas supply structure 410 and thegas exhaust structure 420 may be disposed in thesecond processing region 306 b. - Further, the gas supply structure and the gas exhaust structure in the first embodiment may be divided into a plurality of supply buffer structures and exhaust buffer structures as in the second embodiment. Thus, the amount of gas main component can be adjusted more precisely.
- In the present disclosure, the expression “the same” includes not only exactly the same but also substantially the same including some errors.
- According to the embodiments of the present disclosure, it is possible to provide a technique capable of performing a uniform in-plane process of a substrate in an apparatus for processing the substrate while revolving the substrate.
- While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.
Claims (21)
1. A method of manufacturing a semiconductor device by a substrate processing apparatus in which a gas supply structure is disposed above a substrate mounting plate from a center to an outer periphery of the substrate mounting plate, a gas supplier includes the gas supply structure and is configured to control a supply amount of gas supplied from the gas supply structure, a gas exhaust structure is installed above the substrate mounting plate at a downstream side of the gas supply structure in a rotation direction, a gas exhauster includes the gas exhaust structure and is configured to control an exhaust amount of gas exhausted from the gas exhaust structure, and a gas main component amount controller includes the gas supplier and the gas exhauster and is configured to control an amount of a main component of gas supplied from the gas supply structure, the method comprising:
arranging a plurality of substrates on the substrate mounting plate in a circumferential direction;
starting rotating the substrate mounting plate;
starting supplying gas to the substrate mounting plate in a state where the gas main component amount controller controls the amount of the main component of the gas supplied to the plurality of substrates from the center to the outer periphery of the substrate mounting plate; and
processing the plurality of substrates,
wherein the gas supplier is configured to supply the gas from the gas supply structure in a state where a distance between the gas supply structure and the gas exhaust structure at a location through which middle regions of the plurality of substrates pass is set to be a first distance, and a distance between the gas supply structure and the gas exhaust structure at a location through which lateral regions of the plurality of substrates pass is set to be a second distance shorter than the first distance.
2. The method of claim 1 , wherein, when the plurality of substrates is in a state where pillars forming a plurality of grooves are formed in a plane, the gas main component amount controller is configured to control such that an exposure amount of the gas supplied from the gas supply structure into the middle regions of the plurality of substrates is larger than an exposure amount of the gas supplied from the gas supply structure to the lateral regions of the plurality of substrates.
3. The method of claim 2 , wherein the gas supplier is configured to supply the gas from the gas supply structure at a constant supply amount from the center to the outer periphery of the substrate mounting plate.
4. The method of claim 2 , wherein the gas main component amount controller is configured to increase the amount of the main component of the gas from the center to the outer periphery of the substrate mounting plate.
5. The method of claim 2 , wherein a gas supply hole is formed in the gas supply structure from the center to the outer periphery of the substrate mounting plate,
wherein the gas supply hole is configured to be inclined with respect to surfaces of the plurality of substrates, and
wherein, when the gas is supplied from the gas supplier, the gas is supplied from the gas supply hole.
6. The method of claim 1 , wherein the gas supplier is configured to supply the gas from the gas supply structure at a constant supply amount from the center to the outer periphery of the substrate mounting plate.
7. The method of claim 6 , wherein the first distance and the second distance are set according to surface areas of grooves formed in the middle regions and the lateral regions.
8. The method of claim 6 , wherein the gas main component amount controller is configured to increase the amount of the main component of the gas from the center to the outer periphery of the substrate mounting plate.
9. The method of claim 6 , wherein a gas supply hole is formed in the gas supply structure from the center to the outer periphery of the substrate mounting plate,
wherein the gas supply hole is configured to be inclined with respect to surfaces of the plurality of substrates, and
wherein, when the gas is supplied from the gas supplier, the gas is supplied from the gas supply hole.
10-18. (canceled)
19. The method of claim 3 , wherein the first distance and the second distance are set according to surface areas of grooves formed in the middle regions and the lateral regions.
20. The method of claim 1 , wherein the first distance and the second distance are set according to surface areas of grooves formed in the middle regions and the lateral regions.
21. The method of claim 1 , wherein the gas supply structure includes a buffer space.
22. The method of claim 1 , wherein the gas supply structure includes a hole, which is of a continuous shape.
23. The method of claim 1 , wherein the gas supply structure includes a hole, which is of a U-shape.
24. The method of claim 1 , wherein the gas supply structure includes a plurality of holes arranged along outer peripheries of the plurality of substrates.
25. The method of claim 1 , wherein the gas exhaust structure includes a buffer space.
26. The method of claim 1 , wherein the gas exhaust structure includes a hole, which is of a continuous shape.
27. The method of claim 1 , wherein the gas exhaust structure includes a hole, which is of a U-shape.
28. The method of claim 1 , wherein the gas exhaust structure includes a plurality of holes arranged along outer peripheries of the plurality of substrates.
29. The method of claim 1 , wherein the gas supply structure includes a hole, which is of a U-shape whose gas-exhaust-structure side is released, and wherein the gas exhaust structure includes a hole, which is of a U-shape whose gas-supply-structure side is released.
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JP3062116B2 (en) * | 1996-07-12 | 2000-07-10 | 東京エレクトロン株式会社 | Film forming and reforming assembly equipment |
KR100497748B1 (en) | 2002-09-17 | 2005-06-29 | 주식회사 무한 | ALD equament and ALD methode |
US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
KR101188977B1 (en) * | 2003-08-20 | 2012-10-08 | 비코 인스트루먼츠 인코포레이티드 | Alkyl push flow for vertical flow rotating disk reactors |
US20080241384A1 (en) | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
US8057602B2 (en) | 2007-05-09 | 2011-11-15 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
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JP2012084598A (en) * | 2010-10-07 | 2012-04-26 | Tokyo Electron Ltd | Film deposition device, film deposition method, and storage medium |
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