US20210055756A1 - Connection interface circuit, memory storage device and signal generation method - Google Patents
Connection interface circuit, memory storage device and signal generation method Download PDFInfo
- Publication number
- US20210055756A1 US20210055756A1 US16/656,524 US201916656524A US2021055756A1 US 20210055756 A1 US20210055756 A1 US 20210055756A1 US 201916656524 A US201916656524 A US 201916656524A US 2021055756 A1 US2021055756 A1 US 2021055756A1
- Authority
- US
- United States
- Prior art keywords
- clock signal
- circuit
- connection interface
- module
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005055 memory storage Effects 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 title claims abstract description 17
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 7
- 230000001360 synchronised effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 101100498823 Caenorhabditis elegans ddr-2 gene Proteins 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
- H03K5/135—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of time reference signals, e.g. clock signals
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
- G06F1/08—Clock generators with changeable or programmable clock frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q11/00—Selecting arrangements for multiplex systems
- H04Q11/04—Selecting arrangements for multiplex systems for time-division multiplexing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
- G06F1/06—Clock generators producing several clock signals
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L7/00—Arrangements for synchronising receiver with transmitter
- H04L7/02—Speed or phase control by the received code signals, the signals containing no special synchronisation information
- H04L7/033—Speed or phase control by the received code signals, the signals containing no special synchronisation information using the transitions of the received signal to control the phase of the synchronising-signal-generating means, e.g. using a phase-locked loop
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L7/00—Arrangements for synchronising receiver with transmitter
- H04L7/02—Speed or phase control by the received code signals, the signals containing no special synchronisation information
- H04L7/033—Speed or phase control by the received code signals, the signals containing no special synchronisation information using the transitions of the received signal to control the phase of the synchronising-signal-generating means, e.g. using a phase-locked loop
- H04L7/0331—Speed or phase control by the received code signals, the signals containing no special synchronisation information using the transitions of the received signal to control the phase of the synchronising-signal-generating means, e.g. using a phase-locked loop with a digital phase-locked loop [PLL] processing binary samples, e.g. add/subtract logic for correction of receiver clock
Definitions
- the disclosure relates to a signal processing technology, and in particular, relates to a connection interface circuit, a memory storage device and a signal generation method.
- a memory controller can access a volatile memory module through a connection interface circuit.
- a delay caused by transmitting the clock signal in the connection interface circuit can be measured first, and then an delay amount of an output signal can be iteratively adjusted by the memory controller according to the delay.
- the memory controller often needs to spend more time than expected to adjust the clock signal, thereby reducing an operational efficiency of the memory storage device.
- the disclosure provides a connection interface circuit, a memory storage device and a signal generation method, which can effectively improve the operational efficiency of the memory storage device.
- connection interface circuit configured to couple a memory controller to a volatile memory module.
- the connection interface circuit includes a phase locking circuit, a wire module and a signal interface.
- the phase locking circuit is coupled to the memory controller.
- the wire module is coupled to the phase locking circuit.
- the signal interface is coupled between the wire module and the memory controller.
- the phase locking circuit is configured to receive a first clock signal from the memory controller.
- the phase locking circuit is further configured to generate a second clock signal according to the first clock signal and a delay feature of the wire module.
- the wire module is configured to provide a third clock signal to the signal interface according to the second clock signal.
- An exemplary embodiment of the disclosure further provides a memory storage device, which includes a volatile memory module, a memory controller and a connection interface circuit.
- the memory interface circuit is coupled to the volatile memory module and the memory controller.
- the connection interface circuit is configured to receive a first clock signal from the memory controller.
- the connection interface circuit is further configured to generate a second clock signal according to the first clock signal and a delay feature of a wire module in the connection interface circuit.
- the connection interface circuit is further configured to provide a third clock signal to a signal interface between the connection interface circuit and the memory controller according to the second clock signal.
- An exemplary embodiment of the disclosure further provides a signal generation method for a connection interface circuit.
- the connection interface circuit is configured to couple a memory controller to a volatile memory module.
- the signal generation method includes: receiving a first clock signal from the memory controller; generating a second clock signal according to the first clock signal and a delay feature of a wire module in the connection interface circuit; and providing a third clock signal to a signal interface between the connection interface circuit and the memory controller by the wire module according to the second clock signal.
- connection interface circuit After the connection interface circuit receives the first clock signal from the memory controller, the connection interface circuit can generate the second clock signal according to the first clock signal and the delay feature of the wire module in the connection interface circuit. Then, the third clock signal is provided to the signal interface between the connection interface circuit and the memory controller by the wire module according to the second clock signal. As a result, the efficiency of signal alignment between the connection interface circuit and the memory controller can be effectively improved.
- FIG. 1 is a schematic diagram illustrating a memory storage device according to an exemplary embodiment of the disclosure.
- FIG. 2 is a timing diagram of a plurality of signals according to an exemplary embodiment of the disclosure.
- FIG. 3 is a schematic diagram illustrating a phase locking circuit according to an exemplary embodiment of the disclosure.
- FIG. 4 is an equivalent schematic diagram illustrating a compensation circuit according to an exemplary embodiment of the disclosure.
- FIG. 5 is a flowchart illustrating a signal generation method according to an exemplary embodiment of the disclosure.
- FIG. 6 is a schematic diagram illustrating a memory storage device according to an exemplary embodiment of the disclosure.
- Embodiments of the present disclosure may comprise any one or more of the novel features described herein, including in the Detailed Description, and/or shown in the drawings.
- “at least one”, “one or more”, and “and/or” are open-ended expressions that are both conjunctive and disjunctive in operation.
- each of the expressions “at least one of A, B and C”, “at least one of A, B, or C”, “one or more of A, B, and C”, “one or more of A, B, or C” and “A, B, and/or C” means A alone, B alone, C alone, A and B together, A and C together, B and C together, or A, B and C together.
- Coupled used in this specification (including claims) may refer to any direct or indirect connection means.
- a first device is coupled to a second device should be interpreted as “the first device is directly connected to the second device” or “the first device is indirectly connected to the second device through other devices or connection means.”
- signal can mean a current, a voltage, a charge, a temperature, data or any one or multiple signals.
- FIG. 1 is a schematic diagram illustrating a memory storage device according to an exemplary embodiment of the disclosure.
- a memory storage device 10 includes a memory controller 11 , a connection interface circuit 12 and a volatile memory module 13 .
- the memory controller 11 , the connection interface circuit 12 and the volatile memory module 13 may be installed on one or more circuit boards in the memory storage device 10 .
- the memory controller 11 supports separate and/or parallel data access operations for the volatile memory module 13 .
- the memory controller 11 can serve as a communication bridge between a central processing unit (not shown) and the volatile memory module 13 and can be dedicated to control the volatile memory module 13 .
- the memory controller 11 is also known as a dynamic random access memory controller (DRAM controller).
- DRAM controller dynamic random access memory controller
- the volatile memory module 13 can be used to temporarily store data.
- the volatile memory module 13 may include various types of volatile memory modules including a DDR SDRAM (first generation Double Data Rate Synchronous Dynamic Random Access Memory), a DDR 2 SDRAM (second generation Double Data Rate Synchronous Dynamic Random Access Memory), a DDR 3 SDRAM (third generation Double Data Rate Synchronous Dynamic Random Access Memory), a DDR 4 SDRAM (fourth generation Double Data Rate Synchronous Dynamic Random Access Memory).
- the number of the volatile memory module 13 may be one or more.
- the connection interface circuit 12 is configured to connect the memory controller 11 to the volatile memory module 13 .
- the memory controller 11 can send a control command to the volatile memory module 13 through the connection interface circuit 12 .
- the control command is received by the volatile memory module 13
- the volatile memory module 13 can store write-data corresponding to the control command or return read-data corresponding to the control command to the memory controller 11 through the connection interface circuit 12 .
- the connection interface circuit 12 is also known as a memory interface circuit.
- connection interface circuit 12 includes a phase locking circuit 101 , a wire module 102 and a signal interface 103 .
- the phase locking circuit 101 is coupled to the memory controller 11 .
- the wire module 102 is coupled between the phase locking circuit 101 and the signal interface 103 .
- the signal interface 103 is coupled between the connection interface circuit 12 and the memory controller 11 .
- the phase locking circuit 101 is also known as a phase-locked loop (PLL) circuit.
- the phase locking circuit 101 can receive a clock signal (a.k.a. a first clock signal) CLK( 1 ) from the memory controller 11 .
- the phase locking circuit 101 can generate a clock signal (a.k.a. a second clock signal) CLK( 2 ) according to the clock signal CLK( 1 ) and a delay feature of the wire module 102 .
- the wire module 102 can provide a clock signal (a.k.a. a third clock signal) CLK( 3 ) to the signal interface 103 according to the clock signal CLK( 2 ).
- a delay of the clock signal CLK( 2 ) will occur in the process of being transmitted by the wire module 102 , causing a phase difference between the clock signals CLK( 3 ) and CLK( 2 ) to shift. Therefore, conventionally, after the memory controller 11 provides the clock signal CLK( 1 ) to the phase locking circuit 101 , the memory controller 11 needs to adjust a phase of the clock signal CLK( 3 ) provided by the wire module 102 so that the phase of the clock signal CLK( 3 ) and a phase of CLK( 1 ) are aligned with each other.
- signals S( 1 ) to S( 24 ) outputted by the memory controller 11 can be correctly cooperated with the clock signal CLK( 3 ) in the signal interface 103 to, for example, sample the signals S( 1 ) to S( 24 ) at a correct phase.
- the signals S( 1 ) to S( 24 ) may include a data signal and/or a command signal.
- the memory controller 11 mainly adjusts the phase of the clock signal CLK( 3 ) with a preset delay amount to initially attempt to bring the phase of the clock signal CLK( 3 ) closer to the phase of CLK( 1 ).
- the memory controller 11 can further correct the phase of the clock signal CLK( 3 ) in an iterative manner.
- such adjustment may take more time than expected, resulting in a decrease in the performance of the memory storage device 10 .
- the phase locking circuit 101 can simulate the delay feature of the wire module 102 and generate the clock signal CLK( 2 ) according to such delay feature. For example, the phase locking circuit 101 can attempt to lock a phase difference between the clock signals CLK( 1 ) and CLK( 2 ) at a target phase difference according to the delay feature of the wire module 102 . The target phase difference can be affected by the delay feature of the wire module 102 . Then, in the process of transmitting the clock signal CLK( 2 ) to the signal interface 103 , the wire module 102 can delay the clock signal CLK( 2 ) according to its own delay feature to generate the clock signal CLK( 3 ).
- an delay amount of the clock signal CLK( 2 ) in the wire module 102 corresponds to the target phase difference described above.
- the phase of the clock signal CLK( 3 ) and the phase of the clock signal CLK( 1 ) can be substantially aligned with each other. It should be noted that, the so-called “substantially aligned” may refer to “completely aligned” or “partially aligned with fractional error allowed”.
- FIG. 2 is a timing diagram of a plurality of signals according to an exemplary embodiment of the disclosure.
- the phase locking circuit 101 can delay the clock signal CLK( 1 ) according to the delay feature of the wire module 102 to generate the clock signal CLK( 2 ) (i.e., a first delay) so that the target phase difference (e.g., n degrees) is generated between the clock signals CLK( 1 ) and CLK( 2 ).
- the wire module 102 can delay the clock signal CLK( 2 ) according to its own delay feature to generate the clock signal CLK( 3 ) (i.e., a second delay).
- the phase of the clock signal CLK( 3 ) output by the wire module 102 and the phase of the clock signal CLK( 1 ) can be substantially aligned with each other.
- the clock signal CLK( 3 ) output by the wire module 102 can also be automatically aligned with a signal S(i) to facilitate a subsequent analysis of the signal S(i).
- the signal S(i) may be any one of the signals S( 1 ) to S( 24 ) in FIG. 1 .
- the target phase difference can be generated between the clock signals CLK( 1 ) and CLK( 2 ).
- the target phase difference can be recovered or removed so that the phase of the clock signal CLK( 3 ) and the phase of the clock signal CLK( 1 ) can be substantially aligned with each other.
- the phase locking circuit 101 can dynamically adjust the target phase difference. According to the dynamically adjusted target phase difference, the phase of the clock signal CLK( 3 ) can continuously be substantially aligned with the phase of the clock signal CLK( 1 ).
- FIG. 3 is a schematic diagram illustrating a phase locking circuit according to an exemplary embodiment of the disclosure.
- the phase locking circuit 101 includes a modulation circuit 31 and a compensation circuit 32 .
- the modulation circuit 31 is coupled to the memory controller 101 and the wire module 102 of FIG. 1 .
- the compensation circuit 32 is coupled to the modulation circuit 31 .
- the modulation circuit 31 can receive the clock signal CLK( 1 ) and a compensation signal CS.
- the modulation circuit 31 can generate the clock signal CLK( 2 ) according to the clock signal CLK( 1 ) and the compensation signal CS.
- the modulation circuit 31 can be used to continuously adjust (e.g., delay) the phase of the clock signal CLK( 2 ) to reduce a phase difference between the clock signal CLK( 1 ) and the compensation signal CS. After reaching a steady state (e.g., a phase of the compensation signal CS catches up with the phase of the pulse signal CLK( 1 )), the modulation circuit 31 can lock the phase difference between the clock signals CLK( 1 ) and CLK( 2 ) at the target phase difference.
- a steady state e.g., a phase of the compensation signal CS catches up with the phase of the pulse signal CLK( 1 )
- the modulation circuit 31 includes a phase detector 311 and a clock output circuit 312 .
- the phase detector 311 can receive the clock signal CLK( 1 ) and the compensation signal CS.
- the phase detector 311 can detect the phase difference between the clock signal CLK( 1 ) and the compensation signal CS and generate a phase difference signal FD.
- the phase difference signal FD can reflect the phase difference between the clock signal CLK( 1 ) and the compensation signal CS.
- the clock output circuit 312 can receive the phase difference signal FD and generate the clock signal CLK( 2 ) according to the phase difference signal FD.
- the clock output circuit 312 may include a charge pump, a voltage controlled oscillator and/or a voltage divider.
- the clock output circuit 312 can continuously adjust the phase of the clock signal CLK( 2 ) according to the phase difference signal FD.
- the compensation circuit 32 can generate the compensation signal CS according to the clock signal CLK( 2 ).
- the compensation circuit 32 can simulate the delay feature of the wire module 102 and delay the clock signal CLK( 2 ) according to such delay feature to generate the compensation signal CS.
- FIG. 4 is an equivalent schematic diagram illustrating a compensation circuit according to an exemplary embodiment of the disclosure.
- the wire module 402 includes connection lines L( 1 ) to L( 4 ) and wiring turning points P( 1 ) to P( 4 ).
- the wire module 402 can delay a signal at an input terminal IN according to its own delay feature and output the delayed signal at output terminals OUT.
- a compensation circuit 42 is an equivalent circuit of the wire module 402 .
- the compensation circuit 42 can simulate the delay feature of the wire module 402 .
- the compensation circuit 42 includes circuit modules (a.k.a. first circuit modules) EL( 1 ) to EL( 4 ) and circuit modules (a.k.a. second circuit modules) EP( 1 ) to EP( 4 ).
- the circuit modules EL( 1 ) to EL( 4 ) can be used to simulate delay features of the connection lines L( 1 ) to L( 4 ) in the wire module 402 , respectively.
- the circuit modules EP( 1 ) to EP( 4 ) can be used to simulate delay features of the wiring turning points P( 1 ) to P( 4 ) in the wire module 402 , respectively.
- each of the circuit modules EL( 1 ) to EL( 4 ) includes at least one RC circuit.
- one RC circuit can include at least one resistance component and at least one capacitance component.
- each of the circuit modules EP( 1 ) to EP( 4 ) includes at least one buffer component.
- one buffer component may be a non-reversing or reversing delay component (e.g., a reversing amplifier).
- An delay amount generated by a signal passing through the wire module 402 can be equal to an delay amount generated by the signal passing through the compensation circuit 42 .
- a similar circuit design can be applied to design the compensation circuit 32 of FIG. 3 to simulate the delay feature of the wire module 102 of FIG. 1 .
- the phase locking circuit 101 and/or the clock output circuit 312 can generate the clock signal CLK( 2 ) with 1 ⁇ frequency. That is to say, the frequency of the clock signal CLK( 2 ) is identical to the frequency of the clock signal CLK( 1 ). Nonetheless, in an exemplary embodiment of FIG. 1 and/or FIG. 3 , the phase locking circuit 101 and/or the clock output circuit 312 can also generate a 2 ⁇ clock signal, a 4 ⁇ clock signal or a clock signal with frequency of other multiples. For example, the frequency of the 2 ⁇ clock signal is 2 times the frequency of the clock signal CLK( 2 ), the frequency of the 4 ⁇ clock signal is 4 times the frequency of the clock signal CLK( 2 ), and so on and so forth.
- FIG. 1 , FIG. 3 and FIG. 4 are merely examples and are not intended to limit the disclosure. In other exemplary embodiments not mentioned, more electronic components may be included in the circuit structures presented in FIG. 1 , FIG. 3 , and FIG. 4 to provide additional functionality. Alternatively, some of the electronic components in the circuit structure presented in FIG. 1 , FIG. 3 , and FIG. 4 may be replaced by electronic components having the same or similar functions, and the disclosure is not limited thereto.
- FIG. 5 is a flowchart illustrating a signal generation method according to an exemplary embodiment of the disclosure.
- a first clock signal is received from a memory controller.
- a second clock signal is generated according to the first clock signal and a delay feature of a wire module in the connection interface circuit.
- a third clock signal is provided to a signal interface between the connection interface circuit and the memory controller by the wire module according to the second clock signal.
- steps depicted in FIG. 5 are described in detail as above so that related description thereof is omitted hereinafter. It should be noted that, the steps depicted in FIG. 5 may be implemented as a plurality of program codes or circuits, which are not particularly limited in the disclosure. Moreover, the method disclosed in FIG. 5 may be implemented by reference with above exemplary embodiments, or may be implemented separately, which are not particularly limited in the disclosure.
- FIG. 6 is a schematic diagram illustrating a memory storage device according to an exemplary embodiment of the disclosure.
- a memory storage device 60 is a memory storage device including both a rewritable non-volatile memory module 63 and a volatile memory module 64 , such as a SSD (Solid State Drive).
- the memory storage device 60 can be used together with a host system so the host system can write data into the memory storage device 60 or read data from the memory storage device 60 .
- the mentioned host system may be any system capable of substantially cooperating with the memory storage device 60 for storing data, such as a desktop computer, a notebook computer, a digital camera, a video camera, a communication device, an audio player, a video player or a tablet computer.
- the memory storage device 60 includes a connection interface unit 61 , a memory control circuit unit 62 , the rewritable non-volatile memory module 63 and the volatile memory module 64 .
- the connection interface unit 61 is configured to connect the memory storage device 60 to the host system.
- the connection interface unit 61 is compatible with a SATA (Serial Advanced Technology Attachment) standard. Nevertheless, it should be understood that the disclosure is not limited in this regard.
- the connection interface unit 61 may also be compatible with a PATA (Parallel Advanced Technology Attachment) standard, a PCI Express (Peripheral Component Interconnect Express) interface standard, a USB (Universal Serial Bus) standard or other suitable standards.
- the connection interface unit 61 may be packaged together with the memory control circuit unit 62 into one chip, or the connection interface unit 61 may also be distributed outside of a chip containing the memory control circuit unit 62 .
- the memory control circuit unit 62 is configured to perform operations of writing, reading or erasing data in the rewritable non-volatile memory module 63 according to the control commands.
- the memory control circuit unit 62 may include the memory controller 11 and the connection interface circuit 12 in FIG. 1 to control the volatile memory module 64 .
- the rewritable non-volatile memory module 63 is coupled to the memory control circuit unit 62 and configured to store data written from the host system.
- the rewritable non-volatile memory module 63 may be a SLC (Single Level Cell) NAND flash memory module (i.e., a flash memory module capable of storing one bit in one memory cell), an MLC (Multi Level Cell) NAND flash memory module (i.e., a flash memory module capable of storing two bits in one memory cell), a TLC (Triple Level Cell) NAND flash memory module (i.e., a flash memory module capable of storing three bits in one memory cell), a QLC (Qual Level Cell) NAND-type flash memory module (i.e., a flash memory module capable of storing four bits in one memory cell), other flash memory modules or other memory modules having the same features.
- the target phase difference can be generated between the first clock signal and the second clock signal. Then, after the second delay of the wire module, the target phase difference can be recovered or removed so that the phase of the third clock signal and the phase of the first clock signal can be substantially aligned with each other. Accordingly, under the influence of temperature changes and/or process variations, the phase of the third clock signal can continuously be substantially aligned with the phase of the first clock signal. As a result, the efficiency of signal alignment between the connection interface circuit and the memory controller can be effectively improved.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Dram (AREA)
Abstract
A connection interface circuit, a memory storage device and a signal generation method are disclosed. The connection interface circuit is configured to connect a memory controller to a volatile memory module. The connection interface circuit includes a phase locking circuit, a wire module and a signal interface. The signal interface is coupled between the wire module and the memory controller. The phase locking circuit is configured to receive a first clock signal from the memory controller. The phase locking circuit is further configured to generate a second clock signal according to the first clock signal and a delay feature of the wire module. The wire module is configured to provide a third clock signal to the signal interface according to the second clock signal.
Description
- This application claims the priority benefit of Taiwan application serial no. 108129899, filed on Aug. 21, 2019. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
- The disclosure relates to a signal processing technology, and in particular, relates to a connection interface circuit, a memory storage device and a signal generation method.
- In general, a memory controller can access a volatile memory module through a connection interface circuit. However, in order to align a clock signal provided to the volatile memory module by the connection interface circuit with a clock signal of the memory controller itself, normally, a delay caused by transmitting the clock signal in the connection interface circuit can be measured first, and then an delay amount of an output signal can be iteratively adjusted by the memory controller according to the delay. However, in practice, due to factors like temperature changes and/or process errors, the memory controller often needs to spend more time than expected to adjust the clock signal, thereby reducing an operational efficiency of the memory storage device.
- Nothing herein should be construed as an admission of knowledge in the prior art of any portion of the present disclosure. Furthermore, citation or identification of any document in this application is not an admission that such document is available as prior art to the present disclosure, or that any reference forms a part of the common general knowledge in the art.
- The disclosure provides a connection interface circuit, a memory storage device and a signal generation method, which can effectively improve the operational efficiency of the memory storage device.
- An exemplary embodiment of the disclosure provides a connection interface circuit, which is configured to couple a memory controller to a volatile memory module. The connection interface circuit includes a phase locking circuit, a wire module and a signal interface. The phase locking circuit is coupled to the memory controller. The wire module is coupled to the phase locking circuit. The signal interface is coupled between the wire module and the memory controller. The phase locking circuit is configured to receive a first clock signal from the memory controller. The phase locking circuit is further configured to generate a second clock signal according to the first clock signal and a delay feature of the wire module. The wire module is configured to provide a third clock signal to the signal interface according to the second clock signal.
- An exemplary embodiment of the disclosure further provides a memory storage device, which includes a volatile memory module, a memory controller and a connection interface circuit. The memory interface circuit is coupled to the volatile memory module and the memory controller. The connection interface circuit is configured to receive a first clock signal from the memory controller. The connection interface circuit is further configured to generate a second clock signal according to the first clock signal and a delay feature of a wire module in the connection interface circuit. The connection interface circuit is further configured to provide a third clock signal to a signal interface between the connection interface circuit and the memory controller according to the second clock signal.
- An exemplary embodiment of the disclosure further provides a signal generation method for a connection interface circuit. The connection interface circuit is configured to couple a memory controller to a volatile memory module. The signal generation method includes: receiving a first clock signal from the memory controller; generating a second clock signal according to the first clock signal and a delay feature of a wire module in the connection interface circuit; and providing a third clock signal to a signal interface between the connection interface circuit and the memory controller by the wire module according to the second clock signal.
- Based on the above, after the connection interface circuit receives the first clock signal from the memory controller, the connection interface circuit can generate the second clock signal according to the first clock signal and the delay feature of the wire module in the connection interface circuit. Then, the third clock signal is provided to the signal interface between the connection interface circuit and the memory controller by the wire module according to the second clock signal. As a result, the efficiency of signal alignment between the connection interface circuit and the memory controller can be effectively improved.
- It should be understood, however, that this Summary may not contain all of the aspects and embodiments of the present disclosure, is not meant to be limiting or restrictive in any manner, and that the disclosure as disclosed herein is and will be understood by those of ordinary skill in the art to encompass obvious improvements and modifications thereto.
- To make the aforementioned more comprehensible, several embodiments accompanied with drawings are described in detail as follows.
-
FIG. 1 is a schematic diagram illustrating a memory storage device according to an exemplary embodiment of the disclosure. -
FIG. 2 is a timing diagram of a plurality of signals according to an exemplary embodiment of the disclosure. -
FIG. 3 is a schematic diagram illustrating a phase locking circuit according to an exemplary embodiment of the disclosure. -
FIG. 4 is an equivalent schematic diagram illustrating a compensation circuit according to an exemplary embodiment of the disclosure. -
FIG. 5 is a flowchart illustrating a signal generation method according to an exemplary embodiment of the disclosure. -
FIG. 6 is a schematic diagram illustrating a memory storage device according to an exemplary embodiment of the disclosure. - Reference will now be made in detail to the present preferred embodiments of the disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
- Embodiments of the present disclosure may comprise any one or more of the novel features described herein, including in the Detailed Description, and/or shown in the drawings. As used herein, “at least one”, “one or more”, and “and/or” are open-ended expressions that are both conjunctive and disjunctive in operation. For example, each of the expressions “at least one of A, B and C”, “at least one of A, B, or C”, “one or more of A, B, and C”, “one or more of A, B, or C” and “A, B, and/or C” means A alone, B alone, C alone, A and B together, A and C together, B and C together, or A, B and C together.
- It is to be noted that the term “a” or “an” entity refers to one or more of that entity. As such, the terms “a” (or “an”), “one or more” and “at least one” can be used interchangeably herein.
- The provided exemplary embodiments can be suitably combined. The term “coupling/coupled” used in this specification (including claims) may refer to any direct or indirect connection means. For example, “a first device is coupled to a second device” should be interpreted as “the first device is directly connected to the second device” or “the first device is indirectly connected to the second device through other devices or connection means.” In addition, the term “signal” can mean a current, a voltage, a charge, a temperature, data or any one or multiple signals.
-
FIG. 1 is a schematic diagram illustrating a memory storage device according to an exemplary embodiment of the disclosure. Referring toFIG. 1 , amemory storage device 10 includes amemory controller 11, aconnection interface circuit 12 and avolatile memory module 13. Thememory controller 11, theconnection interface circuit 12 and thevolatile memory module 13 may be installed on one or more circuit boards in thememory storage device 10. Thememory controller 11 supports separate and/or parallel data access operations for thevolatile memory module 13. - The
memory controller 11 can serve as a communication bridge between a central processing unit (not shown) and thevolatile memory module 13 and can be dedicated to control thevolatile memory module 13. In an exemplary embodiment, thememory controller 11 is also known as a dynamic random access memory controller (DRAM controller). - The
volatile memory module 13 can be used to temporarily store data. For example, thevolatile memory module 13 may include various types of volatile memory modules including a DDR SDRAM (first generation Double Data Rate Synchronous Dynamic Random Access Memory), a DDR 2 SDRAM (second generation Double Data Rate Synchronous Dynamic Random Access Memory), a DDR 3 SDRAM (third generation Double Data Rate Synchronous Dynamic Random Access Memory), a DDR 4 SDRAM (fourth generation Double Data Rate Synchronous Dynamic Random Access Memory). Also, the number of thevolatile memory module 13 may be one or more. - The
connection interface circuit 12 is configured to connect thememory controller 11 to thevolatile memory module 13. When data is to be read from thevolatile memory module 13 or data is to be stored into thevolatile memory module 13, thememory controller 11 can send a control command to thevolatile memory module 13 through theconnection interface circuit 12. When the control command is received by thevolatile memory module 13, thevolatile memory module 13 can store write-data corresponding to the control command or return read-data corresponding to the control command to thememory controller 11 through theconnection interface circuit 12. In an exemplary embodiment, theconnection interface circuit 12 is also known as a memory interface circuit. - In an exemplary embodiment, the
connection interface circuit 12 includes aphase locking circuit 101, awire module 102 and asignal interface 103. Thephase locking circuit 101 is coupled to thememory controller 11. Thewire module 102 is coupled between thephase locking circuit 101 and thesignal interface 103. Thesignal interface 103 is coupled between theconnection interface circuit 12 and thememory controller 11. - In an exemplary embodiment, the
phase locking circuit 101 is also known as a phase-locked loop (PLL) circuit. Thephase locking circuit 101 can receive a clock signal (a.k.a. a first clock signal) CLK(1) from thememory controller 11. Thephase locking circuit 101 can generate a clock signal (a.k.a. a second clock signal) CLK(2) according to the clock signal CLK(1) and a delay feature of thewire module 102. Thewire module 102 can provide a clock signal (a.k.a. a third clock signal) CLK(3) to thesignal interface 103 according to the clock signal CLK(2). - In general, a delay of the clock signal CLK(2) will occur in the process of being transmitted by the
wire module 102, causing a phase difference between the clock signals CLK(3) and CLK(2) to shift. Therefore, conventionally, after thememory controller 11 provides the clock signal CLK(1) to thephase locking circuit 101, thememory controller 11 needs to adjust a phase of the clock signal CLK(3) provided by thewire module 102 so that the phase of the clock signal CLK(3) and a phase of CLK(1) are aligned with each other. - Thereafter, signals S(1) to S(24) outputted by the
memory controller 11 can be correctly cooperated with the clock signal CLK(3) in thesignal interface 103 to, for example, sample the signals S(1) to S(24) at a correct phase. Here, the signals S(1) to S(24) may include a data signal and/or a command signal. - Traditionally, the
memory controller 11 mainly adjusts the phase of the clock signal CLK(3) with a preset delay amount to initially attempt to bring the phase of the clock signal CLK(3) closer to the phase of CLK(1). In addition, thememory controller 11 can further correct the phase of the clock signal CLK(3) in an iterative manner. However, under the influence of temperature changes and/or process variations, such adjustment may take more time than expected, resulting in a decrease in the performance of thememory storage device 10. - In an exemplary embodiment, the
phase locking circuit 101 can simulate the delay feature of thewire module 102 and generate the clock signal CLK(2) according to such delay feature. For example, thephase locking circuit 101 can attempt to lock a phase difference between the clock signals CLK(1) and CLK(2) at a target phase difference according to the delay feature of thewire module 102. The target phase difference can be affected by the delay feature of thewire module 102. Then, in the process of transmitting the clock signal CLK(2) to thesignal interface 103, thewire module 102 can delay the clock signal CLK(2) according to its own delay feature to generate the clock signal CLK(3). In particular, an delay amount of the clock signal CLK(2) in thewire module 102 corresponds to the target phase difference described above. In this way, at output terminals of thewire module 102, the phase of the clock signal CLK(3) and the phase of the clock signal CLK(1) can be substantially aligned with each other. It should be noted that, the so-called “substantially aligned” may refer to “completely aligned” or “partially aligned with fractional error allowed”. -
FIG. 2 is a timing diagram of a plurality of signals according to an exemplary embodiment of the disclosure. Referring toFIG. 1 andFIG. 2 , thephase locking circuit 101 can delay the clock signal CLK(1) according to the delay feature of thewire module 102 to generate the clock signal CLK(2) (i.e., a first delay) so that the target phase difference (e.g., n degrees) is generated between the clock signals CLK(1) and CLK(2). Then, in the process of transmitting the clock signal CLK(2) to thesignal interface 103, thewire module 102 can delay the clock signal CLK(2) according to its own delay feature to generate the clock signal CLK(3) (i.e., a second delay). The phase of the clock signal CLK(3) output by thewire module 102 and the phase of the clock signal CLK(1) can be substantially aligned with each other. In addition, the clock signal CLK(3) output by thewire module 102 can also be automatically aligned with a signal S(i) to facilitate a subsequent analysis of the signal S(i). The signal S(i) may be any one of the signals S(1) to S(24) inFIG. 1 . - In other words, after the first delay, the target phase difference can be generated between the clock signals CLK(1) and CLK(2). However, after the second delay, the target phase difference can be recovered or removed so that the phase of the clock signal CLK(3) and the phase of the clock signal CLK(1) can be substantially aligned with each other. In an exemplary embodiment, under the influence of temperature changes and/or process variations, in response to changes in the delay feature of the
wire module 102, thephase locking circuit 101 can dynamically adjust the target phase difference. According to the dynamically adjusted target phase difference, the phase of the clock signal CLK(3) can continuously be substantially aligned with the phase of the clock signal CLK(1). -
FIG. 3 is a schematic diagram illustrating a phase locking circuit according to an exemplary embodiment of the disclosure. Referring toFIG. 3 , thephase locking circuit 101 includes amodulation circuit 31 and acompensation circuit 32. Themodulation circuit 31 is coupled to thememory controller 101 and thewire module 102 ofFIG. 1 . Thecompensation circuit 32 is coupled to themodulation circuit 31. Themodulation circuit 31 can receive the clock signal CLK(1) and a compensation signal CS. Themodulation circuit 31 can generate the clock signal CLK(2) according to the clock signal CLK(1) and the compensation signal CS. For example, themodulation circuit 31 can be used to continuously adjust (e.g., delay) the phase of the clock signal CLK(2) to reduce a phase difference between the clock signal CLK(1) and the compensation signal CS. After reaching a steady state (e.g., a phase of the compensation signal CS catches up with the phase of the pulse signal CLK(1)), themodulation circuit 31 can lock the phase difference between the clock signals CLK(1) and CLK(2) at the target phase difference. - In an exemplary embodiment, the
modulation circuit 31 includes aphase detector 311 and aclock output circuit 312. Thephase detector 311 can receive the clock signal CLK(1) and the compensation signal CS. Thephase detector 311 can detect the phase difference between the clock signal CLK(1) and the compensation signal CS and generate a phase difference signal FD. For example, the phase difference signal FD can reflect the phase difference between the clock signal CLK(1) and the compensation signal CS. Theclock output circuit 312 can receive the phase difference signal FD and generate the clock signal CLK(2) according to the phase difference signal FD. For example, theclock output circuit 312 may include a charge pump, a voltage controlled oscillator and/or a voltage divider. Theclock output circuit 312 can continuously adjust the phase of the clock signal CLK(2) according to the phase difference signal FD. - The
compensation circuit 32 can generate the compensation signal CS according to the clock signal CLK(2). For example, thecompensation circuit 32 can simulate the delay feature of thewire module 102 and delay the clock signal CLK(2) according to such delay feature to generate the compensation signal CS. -
FIG. 4 is an equivalent schematic diagram illustrating a compensation circuit according to an exemplary embodiment of the disclosure. Referring toFIG. 4 , taking awire module 402 as an example, thewire module 402 includes connection lines L(1) to L(4) and wiring turning points P(1) to P(4). Thewire module 402 can delay a signal at an input terminal IN according to its own delay feature and output the delayed signal at output terminals OUT. - A
compensation circuit 42 is an equivalent circuit of thewire module 402. Thecompensation circuit 42 can simulate the delay feature of thewire module 402. For example, thecompensation circuit 42 includes circuit modules (a.k.a. first circuit modules) EL(1) to EL(4) and circuit modules (a.k.a. second circuit modules) EP(1) to EP(4). The circuit modules EL(1) to EL(4) can be used to simulate delay features of the connection lines L(1) to L(4) in thewire module 402, respectively. The circuit modules EP(1) to EP(4) can be used to simulate delay features of the wiring turning points P(1) to P(4) in thewire module 402, respectively. - In an exemplary embodiment, each of the circuit modules EL(1) to EL(4) includes at least one RC circuit. As shown by
FIG. 4 , one RC circuit can include at least one resistance component and at least one capacitance component. In an exemplary embodiment, each of the circuit modules EP(1) to EP(4) includes at least one buffer component. As shown byFIG. 4 , one buffer component may be a non-reversing or reversing delay component (e.g., a reversing amplifier). An delay amount generated by a signal passing through thewire module 402 can be equal to an delay amount generated by the signal passing through thecompensation circuit 42. A similar circuit design can be applied to design thecompensation circuit 32 ofFIG. 3 to simulate the delay feature of thewire module 102 ofFIG. 1 . - In an exemplary embodiment of
FIG. 1 and/orFIG. 3 , thephase locking circuit 101 and/or theclock output circuit 312 can generate the clock signal CLK(2) with 1× frequency. That is to say, the frequency of the clock signal CLK(2) is identical to the frequency of the clock signal CLK(1). Nonetheless, in an exemplary embodiment ofFIG. 1 and/orFIG. 3 , thephase locking circuit 101 and/or theclock output circuit 312 can also generate a 2× clock signal, a 4× clock signal or a clock signal with frequency of other multiples. For example, the frequency of the 2× clock signal is 2 times the frequency of the clock signal CLK(2), the frequency of the 4× clock signal is 4 times the frequency of the clock signal CLK(2), and so on and so forth. - It should be noted that the schematic diagrams of the circuit structures presented in
FIG. 1 ,FIG. 3 andFIG. 4 are merely examples and are not intended to limit the disclosure. In other exemplary embodiments not mentioned, more electronic components may be included in the circuit structures presented inFIG. 1 ,FIG. 3 , andFIG. 4 to provide additional functionality. Alternatively, some of the electronic components in the circuit structure presented inFIG. 1 ,FIG. 3 , andFIG. 4 may be replaced by electronic components having the same or similar functions, and the disclosure is not limited thereto. -
FIG. 5 is a flowchart illustrating a signal generation method according to an exemplary embodiment of the disclosure. Referring toFIG. 5 , in step S501, a first clock signal is received from a memory controller. In step S502, a second clock signal is generated according to the first clock signal and a delay feature of a wire module in the connection interface circuit. In step S503, a third clock signal is provided to a signal interface between the connection interface circuit and the memory controller by the wire module according to the second clock signal. - Nevertheless, steps depicted in
FIG. 5 are described in detail as above so that related description thereof is omitted hereinafter. It should be noted that, the steps depicted inFIG. 5 may be implemented as a plurality of program codes or circuits, which are not particularly limited in the disclosure. Moreover, the method disclosed inFIG. 5 may be implemented by reference with above exemplary embodiments, or may be implemented separately, which are not particularly limited in the disclosure. -
FIG. 6 is a schematic diagram illustrating a memory storage device according to an exemplary embodiment of the disclosure. Referring toFIG. 6 , amemory storage device 60 is a memory storage device including both a rewritablenon-volatile memory module 63 and a volatile memory module 64, such as a SSD (Solid State Drive). Thememory storage device 60 can be used together with a host system so the host system can write data into thememory storage device 60 or read data from thememory storage device 60. For example, the mentioned host system may be any system capable of substantially cooperating with thememory storage device 60 for storing data, such as a desktop computer, a notebook computer, a digital camera, a video camera, a communication device, an audio player, a video player or a tablet computer. - The
memory storage device 60 includes aconnection interface unit 61, a memorycontrol circuit unit 62, the rewritablenon-volatile memory module 63 and the volatile memory module 64. Theconnection interface unit 61 is configured to connect thememory storage device 60 to the host system. In an exemplary embodiment, theconnection interface unit 61 is compatible with a SATA (Serial Advanced Technology Attachment) standard. Nevertheless, it should be understood that the disclosure is not limited in this regard. Theconnection interface unit 61 may also be compatible with a PATA (Parallel Advanced Technology Attachment) standard, a PCI Express (Peripheral Component Interconnect Express) interface standard, a USB (Universal Serial Bus) standard or other suitable standards. Theconnection interface unit 61 may be packaged together with the memorycontrol circuit unit 62 into one chip, or theconnection interface unit 61 may also be distributed outside of a chip containing the memorycontrol circuit unit 62. - The memory
control circuit unit 62 is configured to perform operations of writing, reading or erasing data in the rewritablenon-volatile memory module 63 according to the control commands. For example, the memorycontrol circuit unit 62 may include thememory controller 11 and theconnection interface circuit 12 inFIG. 1 to control the volatile memory module 64. - The rewritable
non-volatile memory module 63 is coupled to the memorycontrol circuit unit 62 and configured to store data written from the host system. The rewritablenon-volatile memory module 63 may be a SLC (Single Level Cell) NAND flash memory module (i.e., a flash memory module capable of storing one bit in one memory cell), an MLC (Multi Level Cell) NAND flash memory module (i.e., a flash memory module capable of storing two bits in one memory cell), a TLC (Triple Level Cell) NAND flash memory module (i.e., a flash memory module capable of storing three bits in one memory cell), a QLC (Qual Level Cell) NAND-type flash memory module (i.e., a flash memory module capable of storing four bits in one memory cell), other flash memory modules or other memory modules having the same features. - In summary, after the first delay of the phase locking circuit, the target phase difference can be generated between the first clock signal and the second clock signal. Then, after the second delay of the wire module, the target phase difference can be recovered or removed so that the phase of the third clock signal and the phase of the first clock signal can be substantially aligned with each other. Accordingly, under the influence of temperature changes and/or process variations, the phase of the third clock signal can continuously be substantially aligned with the phase of the first clock signal. As a result, the efficiency of signal alignment between the connection interface circuit and the memory controller can be effectively improved.
- The previously described exemplary embodiments of the present disclosure have the advantages aforementioned, wherein the advantages aforementioned not required in all versions of the disclosure.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure cover modifications and variations of this disclosure provided they fall within the scope of the following claims and their equivalents.
Claims (24)
1. A connection interface circuit for coupling a memory controller to a volatile memory module, the connection interface circuit comprising:
a phase locking circuit, coupled to the memory controller;
a wire module, coupled to the phase locking circuit; and
a signal interface, coupled between the wire module and the memory controller,
wherein the phase locking circuit is configured to receive a first clock signal from the memory controller,
the phase locking circuit is further configured to generate a second clock signal according to the first clock signal and a delay feature of the wire module, and
the wire module is configured to provide a third clock signal to the signal interface according to the second clock signal.
2. The connection interface circuit according to claim 1 , wherein the phase locking circuit is further configured to lock a phase difference between the first clock signal and the second clock signal at a target phase difference, and the target phase difference is affected by the delay feature of the wire module.
3. The connection interface circuit according to claim 2 , wherein the wire module is further configured to delay the second clock signal to generate the third clock signal, and a delay amount of the second clock signal corresponds to the target phase difference.
4. The connection interface circuit according to claim 1 , wherein the phase locking circuit comprises:
a modulation circuit, coupled to the memory controller and the wire module; and
a compensation circuit, coupled to the modulation circuit,
wherein the modulation circuit is configured to generate the second clock signal according to the first clock signal and a compensation signal, and
the compensation circuit is configured to generate the compensation signal according to the second clock signal.
5. The connection interface circuit according to claim 4 , wherein the compensation circuit comprises:
at least one first circuit module, configured to simulate a delay feature of at least one connection line in the wire module; and
at least one second circuit module, coupled to the at least one first circuit module and configured to simulate a delay feature of at least one wiring turning point in the wire module.
6. The connection interface circuit according to claim 5 , wherein the at least one first circuit module comprises at least one RC circuit.
7. The connection interface circuit according to claim 5 , wherein the at least one second circuit module comprises at least one buffer component.
8. The connection interface circuit according to claim 4 , wherein the modulation circuit comprises:
a phase detector, coupled to the memory controller and the compensation circuit; and
a clock output circuit, coupled to the phase detector and the wire module,
wherein the phase detector is configured to detect a phase difference between the first clock signal and the compensation signal, and
the clock output circuit is configured to generate the second clock signal according to the phase difference.
9. A memory storage device, comprising:
a volatile memory module;
a memory controller; and
a connection interface circuit, coupled to the volatile memory module and the memory controller,
wherein the connection interface circuit is configured to receive a first clock signal from the memory controller,
the connection interface circuit is further configured to generate a second clock signal according to the first clock signal and a delay feature of a wire module in the connection interface circuit, and
the connection interface circuit is further configured to provide a third clock signal to a signal interface between the connection interface circuit and the memory controller according to the second clock signal.
10. The memory storage device according to claim 9 , wherein the connection interface circuit is further configured to lock a phase difference between the first clock signal and the second clock signal at a target phase difference, and the target phase difference is affected by the delay feature of the wire module.
11. The memory storage device according to claim 10 , wherein the connection interface circuit is further configured to delay the second clock signal by the wire module to generate the third clock signal, and a delay amount of the second clock signal corresponds to the target phase difference.
12. The memory storage device according to claim 9 , wherein the connection interface circuit comprises:
a modulation circuit, coupled to the memory controller; and
a compensation circuit, coupled to the modulation circuit,
wherein the modulation circuit is configured to generate the second clock signal according to the first clock signal and a compensation signal, and
the compensation circuit is configured to generate the compensation signal according to the second clock signal.
13. The memory storage device according to claim 12 , wherein the compensation circuit comprises:
at least one first circuit module, configured to simulate a delay feature of at least one connection line in the wire module; and
at least one second circuit module, coupled to the at least one first circuit module and configured to simulate a delay feature of at least one wiring turning point in the wire module.
14. The memory storage device according to claim 13 , wherein the at least one first circuit module comprises at least one RC circuit.
15. The memory storage device according to claim 13 , wherein the at least one second circuit module comprises at least one buffer component.
16. The memory storage device according to claim 12 , wherein the modulation circuit comprises:
a phase detector, coupled to the memory controller and the compensation circuit; and
a clock output circuit, coupled to the phase detector and the wire module,
wherein the phase detector is configured to detect a phase difference between the first clock signal and the compensation signal, and
the clock output circuit is configured to generate the second clock signal according to the phase difference.
17. A signal generation method for a connection interface circuit, wherein the connection interface circuit is configured to connect a memory controller and a volatile memory module, and the signal generation method comprises:
receiving a first clock signal from the memory controller;
generating a second clock signal according to the first clock signal and a delay feature of a wire module in the connection interface circuit; and
providing a third clock signal to a signal interface between the connect interface circuit and the memory controller by the wire module according to the second clock signal.
18. The signal generation method according to claim 17 , further comprising:
locking a phase difference between the first clock signal and the second clock signal at a target phase difference, wherein the target phase difference is affected by the delay feature of the wire module.
19. The signal generation method according to claim 18 , further comprising:
delaying the second clock signal by the wire module to generate the third clock signal, wherein a delay amount of the second clock signal corresponds to the target phase difference.
20. The signal generation method according to claim 17 , wherein the step of generating the second clock signal according to the first clock signal and the delay feature of the wire module in the connection interface circuit comprises:
generating the second clock signal according to the first clock signal and a compensation signal; and
generating the compensation signal according to the second clock signal.
21. The signal generation method according to claim 20 , further comprising:
simulating a delay feature of at least one connection line in the wire module; and
simulating a delay feature of at least one wiring turning point in the wire module.
22. The signal generation method according to claim 21 , wherein the step of simulating the delay feature of the at least one connection line in the wire module comprises:
simulating the delay feature of the at least one connection line in the wire module by at least one RC circuit.
23. The signal generation method according to claim 21 , wherein the step of simulating the delay feature of the at least one wiring turning point in the wire module comprises:
simulating the delay feature of the at least one wiring turning point by at least one buffer component.
24. The signal generation method according to claim 20 , wherein the step of generating the second clock signal according to the first clock signal and the compensation signal comprises:
detecting a phase difference between the first clock signal and the compensation signal; and
generating the second clock signal according to the phase difference.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108129899A TWI743538B (en) | 2019-08-21 | 2019-08-21 | Connection interface circuit, memory storage device and signal generation method |
TW108129899 | 2019-08-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20210055756A1 true US20210055756A1 (en) | 2021-02-25 |
US10942541B1 US10942541B1 (en) | 2021-03-09 |
Family
ID=74645788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/656,524 Active US10942541B1 (en) | 2019-08-21 | 2019-10-17 | Connection interface circuit, memory storage device and signal generation method |
Country Status (2)
Country | Link |
---|---|
US (1) | US10942541B1 (en) |
TW (1) | TWI743538B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI727656B (en) * | 2020-02-13 | 2021-05-11 | 群聯電子股份有限公司 | Clock and data recovery circuit, memory storage device and signal adjustment method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6442697B1 (en) * | 2000-03-24 | 2002-08-27 | Intel Corporation | Method and apparatus to control processor power and performance for single phase lock loop (PLL) processor systems |
KR100888597B1 (en) * | 2006-09-20 | 2009-03-16 | 삼성전자주식회사 | Apparatus and methods for controlling memory interface |
EP2153525B1 (en) * | 2007-05-29 | 2017-04-05 | Rambus Inc. | Adjusting clock error across a circuit interface |
US20140312928A1 (en) * | 2013-04-19 | 2014-10-23 | Kool Chip, Inc. | High-Speed Current Steering Logic Output Buffer |
TWI486780B (en) * | 2013-08-13 | 2015-06-01 | Phison Electronics Corp | Connecting interface unit and memory storage device |
TWI603175B (en) * | 2013-08-14 | 2017-10-21 | 群聯電子股份有限公司 | Connecting interface unit and memory storage device |
US10848161B2 (en) * | 2017-06-28 | 2020-11-24 | Analog Devices, Inc. | Reference monitors with dynamically controlled latency |
-
2019
- 2019-08-21 TW TW108129899A patent/TWI743538B/en active
- 2019-10-17 US US16/656,524 patent/US10942541B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI743538B (en) | 2021-10-21 |
US10942541B1 (en) | 2021-03-09 |
TW202110097A (en) | 2021-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11348632B2 (en) | Double data rate (DDR) memory controller apparatus and method | |
US11862234B2 (en) | Memory device and operation method thereof | |
US10163485B2 (en) | Memory module, memory controller and associated control method for read training technique | |
US9712175B2 (en) | Clock and data recovery circuit module and phase lock method | |
US7177230B1 (en) | Memory controller and memory system | |
US9449660B2 (en) | Sampling circuit module, memory control circuit unit, and method for sampling data | |
KR20150088088A (en) | write leveling control circuit for target module and thereof Method | |
US9659618B1 (en) | Memory interface, memory control circuit unit, memory storage device and clock generation method | |
TWI537965B (en) | Sampling circuit module, memory control circuit unit, and data sampling method | |
CN107516536B (en) | Memory interface, control circuit unit, memory device and clock generation method | |
US10942541B1 (en) | Connection interface circuit, memory storage device and signal generation method | |
CN105654986B (en) | Sampling circuit module, memory control circuit unit and data sampling method | |
KR20220085237A (en) | Storage controller, storage device, and operation method of storage device | |
US10978120B2 (en) | Memory interface circuit, memory storage device and signal generation method | |
US11004498B2 (en) | Memory interface circuit, memory storage device and configuration status checking method | |
US10302701B2 (en) | Memory apparatus relating to determination of a failed region and test method thereof, memory module and system using the same | |
US11145343B1 (en) | Method for controlling multi-cycle write leveling process in memory system | |
CN112447210B (en) | Connection interface circuit, memory storage device and signal generation method | |
US8799606B2 (en) | Computer memory subsystem for enhancing signal quality | |
CN112309444B (en) | Memory interface circuit, memory storage device and setting state detection method | |
CN114518837B (en) | Processing method for multi-cycle write balancing program of memory system | |
US11532366B2 (en) | Storage devices and methods of operating storage devices | |
US9685221B1 (en) | Memory control circuit unit, memory storage device and reference voltage generation method | |
CN112309445A (en) | Memory interface circuit, memory storage device and signal generating method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: PHISON ELECTRONICS CORP., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HUANG, MING-CHIEN;REEL/FRAME:050755/0151 Effective date: 20190815 |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |