US20210043622A1 - Protection device - Google Patents
Protection device Download PDFInfo
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- US20210043622A1 US20210043622A1 US16/987,066 US202016987066A US2021043622A1 US 20210043622 A1 US20210043622 A1 US 20210043622A1 US 202016987066 A US202016987066 A US 202016987066A US 2021043622 A1 US2021043622 A1 US 2021043622A1
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- insulating wall
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- peripheral insulating
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- 239000000758 substrate Substances 0.000 claims abstract description 41
- 230000002093 peripheral effect Effects 0.000 claims abstract description 29
- 238000002161 passivation Methods 0.000 claims description 8
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- NUHSROFQTUXZQQ-UHFFFAOYSA-N isopentenyl diphosphate Chemical compound CC(=C)CCO[P@](O)(=O)OP(O)(O)=O NUHSROFQTUXZQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
- H01L29/1008—Base region of bipolar transistors of lateral transistors
Definitions
- the present disclosure generally concerns electronic devices and, more particularly, electronic devices of protection against electrostatic discharges.
- Electrostatic discharges (ESD) occurring in an unprotected integrated circuit may generate unwanted effects therein, most of the time resulting in a deterioration of elements forming part of the circuit. Such a deterioration often causes significant malfunctions, capable of making the circuit partially or even totally inoperative.
- a trigger voltage which is both sufficiently low to properly protect the circuit in case of an electrostatic discharge, and also relatively high to avoid any untimely triggering during the normal operation of the circuit;
- a dynamic resistance which is as low as possible so that a clamping voltage or limiting voltage, corresponding to the maximum voltage that can be reached in case of an electrostatic discharge, is as low as possible.
- An embodiment overcomes all or part of the disadvantages of known devices of protection against electrostatic discharges.
- At least one lateral bipolar transistor formed in the well, having a base region extending under parallel collector and emitter regions,
- the wall being widened in a first direction, parallel to the collector and emitter regions, so that the base region penetrates into the wall.
- the base region stops before the wall in a second direction perpendicular to the first direction.
- the substrate has a first conductivity type
- the wall has the first conductivity type
- the base region has the first conductivity type
- the well has a second conductivity type different from the first conductivity type
- the collector and emitter regions have the second conductivity type.
- the base region penetrates into the wall over a distance in the range from approximately 20% to approximately 50% of the length of the base region in the first direction, preferably over a distance in the range from 20% to 50% of the length of the base region in the first direction.
- the base region continues into the wall over a distance of approximately 30% of the length of the base region in the first direction, preferably over a distance equal to 30% of the length of the base region in the first direction.
- the first conductivity type is p and the second conductivity type is n.
- the first conductivity type is n and the second conductivity type is p.
- first contacting tracks are located vertically in line with the collector areas
- second contacting tracks are located vertically in line with the emitter areas.
- One embodiment provides a device of protection against electrostatic discharges comprising at least one electronic device of such type.
- the device has a holding voltage greater than 5 V and a clamping voltage of less than 7 V.
- the device is suitable for protecting an application for which a limit voltage is between about 0 V and about 5 V, preferably between 0 V and 5 V.
- FIG. 1 schematically shows a top view of an embodiment of an electronic device
- FIG. 2 schematically shows a perspective cross-section view along plane AA of FIG. 1 ;
- FIG. 3 schematically shows a perspective cross-section view along plane BB of FIG. 1 ;
- FIG. 4 shows an electrical circuit equivalent to the embodiment of the device discussed in relation with FIGS. 1 to 3 ;
- FIG. 5 shows a current-vs.-voltage characteristic of an embodiment of a device of protection against electrostatic discharges.
- connection is used to designate a direct electrical connection between circuit elements with no intermediate elements other than conductors
- coupled is used to designate an electrical connection between circuit elements that may be direct, or may be via one or more intermediate elements.
- FIG. 1 schematically shows a top view of an embodiment of an electronic device 100 .
- FIG. 1 is a top view illustrating the distribution of conductive contacting tracks of collector and emitter regions of the transistors.
- device 100 is formed in all or part of substrate 300 .
- Substrate 300 is, for example, a silicon wafer, only a rectangular portion thereof being shown in FIG. 1 .
- Substrate 300 (or the portion of substrate 300 ) comprises, at its upper surface 302 , an interdigitated structure.
- the interdigitated structure is formed of:
- first substantially parallel fingers 310 , 312 , and 314 extending along a first direction X at the upper surface 302 of substrate 300 from a first side of substrate 300 (the right-hand side, in FIG. 1 );
- second substantially parallel fingers 320 and 322 extending along the first direction X at the upper surface 302 of substrate 300 from a second side of substrate 300 (the left-hand side, in FIG. 1 ).
- This second side is, in the present example, the side opposite to the first side, so that first and second fingers 310 , 312 , 314 , 320 , and 322 are substantially parallel to one another.
- First fingers 310 , 312 , and 314 form the contacting tracks of first regions (for example, collector regions of the transistors).
- the second fingers form the contacting tracks of second regions (for example, emitter regions of the transistors).
- the interdigitated structure is here formed of two “combs,” one formed of the first fingers 310 , 312 , and 314 , and the other formed of the second fingers 320 and 322 , which interpenetrate.
- the interdigitated structure thus comprises, along a second direction Y perpendicular to the first direction X, an alternation of first and of second fingers.
- two first neighboring fingers, respectively two second neighboring fingers are separated by a second finger, respectively by a first finger.
- First and second fingers 310 , 312 , 314 , 320 , and 322 are spaced apart from one another. In other words, fingers 310 , 312 , 314 , 320 , and 322 are not contiguous.
- Substrate 300 may however comprise a plurality of other first and second fingers interposed, still in the example of FIG. 1 , between first finger 312 and second finger 322 .
- Substrate 300 may thus comprise any number of first fingers and any number of second fingers.
- the numbers of first and of second fingers may be different.
- Substrate 300 may, for example, comprise eight first fingers and seven second fingers.
- Substrate 300 preferably comprises at least two first fingers and at least one second finger.
- FIG. 1 shows a substrate 300 comprising an odd number of first fingers and an even number of second fingers.
- substrate 300 may equally well comprise even or odd numbers of first and second fingers.
- FIG. 2 schematically shows a perspective cross-section view along plane AA of FIG. 1 .
- Cross-section plane AA is perpendicular to direction X of first and second fingers 310 , 312 , 314 , 320 , and 322 (that is, parallel to direction Y).
- substrate 300 comprises, under its upper surface 302 , a well 330 .
- Well 330 is laterally delimited by a peripheral insulating wall 340 .
- Insulating wall 340 comprises, in this example, a first area 3400 (Bottom Iso) and a second area 3402 (Top Iso) stacked in a third vertical direction (Z).
- Substrate 300 is made of a material of a first conductivity type, for example, p-type doped single crystal silicon.
- Peripheral insulating wall 340 is of the same conductivity type as substrate 300 , here of type p.
- first area 3400 is formed from a p-type buried layer.
- Second area 3402 is formed from another layer, also of type p.
- well 330 has a thickness substantially equal to that of second area 3402 and wall 340 then comprises only this second area 3402 .
- Well 330 is formed, preferably, by epitaxy (by epitaxial growth) of a doped material of a second conductivity type, different from the first conductivity type.
- Well 330 is made, for example, of n-type silicon.
- Well 330 thus is of a conductivity type different from:
- Substrate 300 is passivated at its surface and thus comprises, in FIG. 2 , a surface passivation layer 350 .
- the upper surface 302 of substrate 300 thus corresponds, in the present example, to the upper surface of its passivation layer 350 .
- a third area 360 is formed at the interface between the lower surface of well 330 and substrate 300 .
- Third area 360 extends along direction Y and stops before peripheral insulating wall 340 .
- area 360 is formed from an n-type buried layer.
- First regions 370 , 372 , and 374 and second regions 380 and 382 are formed under the passivation layer 350 of substrate 300 .
- First and second regions 370 , 372 , 374 , 380 , and 382 are parallel, non-contiguous, and extend along first direction X.
- FIG. 2 In the example of FIG. 2 :
- first regions 370 , 372 , and 374 are respectively located vertically in line with first fingers 310 , 312 , and 314 ;
- second regions 380 and 382 are respectively located vertically in line with second fingers 320 and 322 .
- First fingers 310 , 312 , and 314 cross passivation layer 350 of substrate 300 to respectively contact first regions 370 , 372 , and 374 .
- second fingers 320 and 322 cross passivation layer 350 of substrate 300 to respectively contact second regions 380 and 382 .
- a third region 390 extends under first regions 370 , 372 , and 374 , and under second regions 380 and 382 , from the passivation layer 350 of substrate 300 .
- Third region 390 stops, in second direction Y, before peripheral insulating wall 340 .
- First regions 370 , 372 , and 374 and second regions 380 and 382 are of the same conductivity type as well 330 , in this example of type n.
- Third region 390 is of the same conductivity type as substrate 300 , in the present example, of type p.
- Third region 390 thus forms, with first regions 370 , 372 , and 374 and second regions 380 and 382 , p-n junctions.
- first regions 370 and 372 , second region 380 , and third region 390 jointly form a lateral transistor 500 , here of type NPN, also called NPN lateral transistor 500 .
- a lateral transistor 500 here of type NPN, also called NPN lateral transistor 500 .
- first regions 370 and 372 form collector regions of transistor 500 ;
- second region 380 forms an emitter region of transistor 500 ;
- third region 390 forms a base region of transistor 500 ;
- first region 374 and second region 382 respectively form a collector region and an emitter region of another NPN lateral transistor similar to transistor 500 and partially shown in FIG. 2 .
- First fingers 310 and 312 respectively connected to collector regions 370 and 372 , thus form collector contacts of lateral NPN transistor 500 .
- Second finger 320 connected to emitter region 380 , forms an emitter contact of lateral NPN transistor 500 .
- Base region 390 being connected to no contacting track, it is said to be the “floating base” of transistor 500 .
- FIG. 3 schematically shows a perspective and cross-section view along plane BB of FIG. 1 .
- Cross-section plane BB is parallel to direction X of first and second fingers 310 , 312 , 314 , 320 , and 322 (that is, perpendicular to direction Y).
- first and second fingers 310 , 312 , 314 , 320 , and 322 that is, perpendicular to direction Y.
- plane BB FIG. 1
- Insulating wall 340 still comprises, in the present example, a stacked first area 3400 (Bottom Iso) and second area 3402 (Top Iso).
- Third area 360 extends along direction X and stops before peripheral insulating wall 340 .
- wall 340 is widened, in a first direction X parallel to collector regions 370 , 372 , and 374 and to emitter regions 380 and 382 (only collector region 372 can be seen in the cross-section view of FIG. 3 ), so that base region 390 penetrates into wall 340 .
- base region 390 penetrates into wall 340 over a distance, noted D, in the range from approximately 20% to approximately 50% of the length, noted L, of base region 390 in first direction X, preferably over a distance D in the range from 20% to 50% of length L of the region 390 in first direction X.
- Base region 390 continues, more preferably, into wall 340 over a distance D of approximately 30% of length L of base region 390 in first direction X, even more preferably over a distance D equal to 30% of length L of region 390 in first direction X.
- base region 390 only penetrates into second area 3402 of wall 340 .
- First area 3400 can, where appropriate, have a width smaller than the width of second area 3402 , these widths both being evaluated along first direction X.
- a device 100 comprising one or a plurality of transistors similar to lateral NPN transistor 500 may be used to protect at least one integrated circuit and/or one discrete electronic component against electrostatic discharges.
- Device 100 is, for example, capable of protecting input/output circuits against electrostatic discharges which may occur thereacross.
- FIG. 4 shows an electrical circuit equivalent to the embodiment of device 100 discussed in relation with FIGS. 1 to 3 .
- device 100 comprises a single lateral NPN transistor 500 as discussed in relation with FIGS. 2 and 3 .
- Transistor 500 of device 100 comprises, in the equivalent electrical circuit of FIG. 4 :
- the collector terminal 502 of transistor 500 is, for example, formed by contacting tracks 310 and 312 connected to the first collector regions 370 and 372 ;
- the floating base 504 of transistor 500 is, for example, formed by base region 390 ;
- the emitter terminal 506 of transistor 500 is, for example, formed by contacting track 320 connected to the second emitter region 380 .
- the transistor 500 of device 100 also comprises, as illustrated in FIG. 4 :
- a first Zener diode 510 having its anode connected to the floating base 504 of transistor 500 and having its cathode connected to the collector terminal 502 of transistor 500 ;
- Zener diode 512 having its anode connected to floating base 504 of transistor 500 and having its cathode connected to the emitter terminal 506 of transistor 500 .
- the collector terminal 502 of transistor 500 is connected to an input/output terminal (IO) of the circuit(s) to be protected;
- the emitter terminal 506 of transistor 500 is set to ground GND.
- FIG. 5 shows a current-vs.-voltage characteristic of an embodiment of a device of protection against electrostatic discharges, for example, a device 100 comprising at least one lateral NPN transistor 500 .
- the current-vs.-voltage characteristic of FIG. 5 corresponds to the equivalent circuit discussed in relation with FIG. 4 .
- a curve 700 reflects, in FIG. 5 , an intensity variation of a direct electric current, noted IF, or a reverse current, noted IR, flowing through NPN lateral transistor 500 .
- Such an intensity is a function of a direct bias voltage, noted VF, or of a reverse bias voltage, noted VR.
- Curve 700 thus is, in FIG. 5 , divided into two portions:
- a portion 700 R (on the left-hand side in FIG. 5 ) corresponding to variations of reverse current IR according to reverse bias voltage VR.
- Portions 700 F and 700 R of curve 700 are, to within their sign, substantially identical. For simplification, only portion 700 F will be described hereafter, the transposition of such a description to portion 700 R of curve 700 being within the abilities of those skilled in the art based on the following indications.
- the direct bias voltage VF of device 100 may take values in the range from 0 V to a limiting voltage, noted VRM.
- Limiting voltage VRM corresponds to the maximum voltage value provided for a given application. Limiting voltage VRM is, for example, in the order of 3 V or of 5 V according to the considered application.
- IRM a leakage current
- bias voltage VF may temporarily exceed a threshold voltage, noted VTRIG.
- Threshold voltage VTRIG corresponds to a voltage for triggering the protection. To avoid any risk of untimely triggering of the protection, it is ascertained that threshold voltage VTRIG is greater than the limiting voltage VRM provided in the considered application.
- threshold voltage VTRIG Once threshold voltage VTRIG has been exceeded, that is, once the protection has been triggered, a snap-back effect occurs. Such a snap-back phenomenon causes a significant decrease of the bias voltage across transistor 500 . After the snap back, bias voltage VF may thus decrease to a minimum voltage value, called “hold value,” noted VHOLD. In other words, hold voltage VHOLD corresponds to the minimum voltage capable of being reached after the triggering of the protection.
- the snap-back phenomenon enables transistor 500 to discharge an electric current substantially greater than the current that it would conduct, before the snap-back, under a voltage of same value.
- the snapback phenomenon enables transistor 500 to convey a significant current while limiting the voltage increase (the temporary overvoltage) caused by the electrostatic discharge. By thus limiting the voltage increase, risks of deterioration of one or a plurality of circuits and/or components protected by transistor 500 are decreased.
- the electrostatic discharge may however be sufficient for the direct bias voltage VF of transistor 500 to keep on increasing even after the triggering of the protection.
- Such an increase in voltage VF goes along with an increase in the current IF crossing transistor 500 .
- the value of the direct bias voltage VF may then increase up to a value, noted VCL, called clamping voltage.
- Clamping voltage VCL corresponds to a maximum intensity acceptable by the protection (peak pulse current), noted IPP.
- a hold voltage VHOLD greater than limiting voltage VRM it is desired to obtain a hold voltage VHOLD greater than limiting voltage VRM.
- the inventors have observed that it is possible to modify the value of hold voltage VHOLD by adjusting the doping level of the base regions and of the emitter regions of transistor 500 .
- the inventors have observed that an increase in the doping level of the base and emitter regions of transistor 500 causes a decrease in hold voltage VHOLD.
- the inventors have further observed that it is possible to decrease trigger voltage VTRIG without degrading the quality of the protection.
- This decrease in trigger voltage VTRIG means that the protection is faster and more reactive.
- the decrease in trigger voltage VTRIG can further reduce the residual clamping voltage VCL seen by the application prior to complete activation of the structure.
- the inventors have observed that it is possible to obtain a more sensitive protection by improving the value of its dynamic resistance RDYN, device 100 having an improved series resistance due to the presence of two Zener diodes 510 and 512 ( FIG. 4 ) in parallel.
- a base region continuing inside wall 340 over a distance D of approximately 30% of length L of base region 390 in first direction X enables, in particular, to obtain a decrease in clamping voltage VCL by approximately 8.5% for a same current IF.
- transistor 500 is capable, under a same voltage VF, to convey a greater current IF than a transistor having a base region 390 which would not penetrate into peripheral insulating wall 340 .
- a device of protection against electrostatic discharges comprising at least one device 100 as described above in relation with FIGS. 1 to 3 , makes it possible in particular to obtain a hold voltage VHOLD greater than 5 V while maintaining a blocking voltage VCL of less than 7 V.
- Such a device of protection is thus compatible with applications for which the limit voltage VRM is between about 0 V and about 5 V, preferably between 0 V and 5 V.
- the value of the desired holding voltage VHOLD is obtained by the presence of the two Zener diodes 510 and 512 ( FIG. 4 ).
- FIGS. 1 to 5 take as an example an embodiment of a device 100 comprising at least one lateral NPN-type transistor 500 .
- the conductivity types (the dopings) taken as an example in the present disclosure may be reversed.
- the adaptation of such an embodiment to a device 100 comprising at least one lateral PNP-type transistor is within the abilities of those skilled in the art based on the indications provided hereabove.
- connection of the contacting tracks of the transistor(s) 500 comprised in device 100 across the circuit(s) and/or of the discrete components to be protected is within the abilities of those skilled in the art based on the above indications.
Abstract
Description
- The present disclosure generally concerns electronic devices and, more particularly, electronic devices of protection against electrostatic discharges.
- Electrostatic discharges (ESD) occurring in an unprotected integrated circuit may generate unwanted effects therein, most of the time resulting in a deterioration of elements forming part of the circuit. Such a deterioration often causes significant malfunctions, capable of making the circuit partially or even totally inoperative.
- To avoid the damage potentially caused by an electrostatic discharge, current integrated circuits frequently comprise devices of protection against the effects of such electrostatic discharges. To be efficient, such protection devices should ideally have:
- a trigger voltage which is both sufficiently low to properly protect the circuit in case of an electrostatic discharge, and also relatively high to avoid any untimely triggering during the normal operation of the circuit;
- a hold voltage, after the starting of the protection, which is sufficiently low to enable to expose the circuit to the lowest possible voltage while ensuring a good dissipation of the electric current originating from the electrostatic discharge; and
- a dynamic resistance which is as low as possible so that a clamping voltage or limiting voltage, corresponding to the maximum voltage that can be reached in case of an electrostatic discharge, is as low as possible.
- Current devices of protection against electrostatic discharges do not enable to reconcile all the above characteristics, which affects their performance.
- There is a need to improve the performance of current devices of protection against electrostatic discharges.
- An embodiment overcomes all or part of the disadvantages of known devices of protection against electrostatic discharges.
- An embodiment provides an electronic device comprising a substrate comprising:
- a well;
- a peripheral insulating wall surrounding the well; and
- at least one lateral bipolar transistor formed in the well, having a base region extending under parallel collector and emitter regions,
- the wall being widened in a first direction, parallel to the collector and emitter regions, so that the base region penetrates into the wall.
- According to one embodiment, the base region stops before the wall in a second direction perpendicular to the first direction.
- According to one embodiment:
- the substrate has a first conductivity type;
- the wall has the first conductivity type;
- the base region has the first conductivity type;
- the well has a second conductivity type different from the first conductivity type; and
- the collector and emitter regions have the second conductivity type.
- According to one embodiment, the base region penetrates into the wall over a distance in the range from approximately 20% to approximately 50% of the length of the base region in the first direction, preferably over a distance in the range from 20% to 50% of the length of the base region in the first direction.
- According to one embodiment, the base region continues into the wall over a distance of approximately 30% of the length of the base region in the first direction, preferably over a distance equal to 30% of the length of the base region in the first direction.
- According to one embodiment, the first conductivity type is p and the second conductivity type is n.
- According to one embodiment, the first conductivity type is n and the second conductivity type is p.
- According to one embodiment:
- first contacting tracks are located vertically in line with the collector areas; and
- second contacting tracks are located vertically in line with the emitter areas.
- One embodiment provides a device of protection against electrostatic discharges comprising at least one electronic device of such type.
- According to one embodiment, the device has a holding voltage greater than 5 V and a clamping voltage of less than 7 V.
- According to one embodiment, the device is suitable for protecting an application for which a limit voltage is between about 0 V and about 5 V, preferably between 0 V and 5 V.
- The foregoing and other features and advantages will be discussed in detail in the following non-limiting description of specific embodiments in connection with the accompanying drawings, in which:
-
FIG. 1 schematically shows a top view of an embodiment of an electronic device; -
FIG. 2 schematically shows a perspective cross-section view along plane AA ofFIG. 1 ; -
FIG. 3 schematically shows a perspective cross-section view along plane BB ofFIG. 1 ; -
FIG. 4 shows an electrical circuit equivalent to the embodiment of the device discussed in relation withFIGS. 1 to 3 ; and -
FIG. 5 shows a current-vs.-voltage characteristic of an embodiment of a device of protection against electrostatic discharges. - The same elements have been designated with the same reference numerals in the different drawings. In particular, the structural and/or functional elements common to the different embodiments may be designated with the same reference numerals and may have identical structural, dimensional, and material properties.
- For clarity, only those steps and elements which are useful to the understanding of the described embodiments have been shown and are detailed. In particular, the components or integrated circuits to be protected against electrostatic discharges will not be described, such components or integrated circuits being compatible with the components or circuits conventionally protected against electrostatic discharges.
- Throughout the present disclosure, the term “connected” is used to designate a direct electrical connection between circuit elements with no intermediate elements other than conductors, whereas the term “coupled” is used to designate an electrical connection between circuit elements that may be direct, or may be via one or more intermediate elements.
- In the following description, when reference is made to terms qualifying absolute positions, such as terms “front,” “back,” “top,” “bottom,” “left,” “right,” etc., or relative positions, such as terms “above,” “under,” “upper,” “lower,” etc., or to terms qualifying directions, such as terms “horizontal,” “vertical,” etc., unless otherwise specified, it is referred to the orientation of the drawings.
- The terms “about,” “substantially,” and “approximately” are used herein to designate a tolerance of plus or minus 10%, preferably of plus or minus 5%, of the value in question.
-
FIG. 1 schematically shows a top view of an embodiment of anelectronic device 100. -
Device 100 integrates, in asubstrate 300, one or a plurality of parallel lateral transistors.FIG. 1 is a top view illustrating the distribution of conductive contacting tracks of collector and emitter regions of the transistors. - According to this embodiment,
device 100 is formed in all or part ofsubstrate 300.Substrate 300 is, for example, a silicon wafer, only a rectangular portion thereof being shown inFIG. 1 . Substrate 300 (or the portion of substrate 300) comprises, at itsupper surface 302, an interdigitated structure. - In
FIG. 1 , the interdigitated structure is formed of: - first substantially
parallel fingers upper surface 302 ofsubstrate 300 from a first side of substrate 300 (the right-hand side, inFIG. 1 ); and - second substantially
parallel fingers upper surface 302 ofsubstrate 300 from a second side of substrate 300 (the left-hand side, inFIG. 1 ). This second side is, in the present example, the side opposite to the first side, so that first andsecond fingers -
First fingers - In other words, the interdigitated structure is here formed of two “combs,” one formed of the
first fingers second fingers - First and
second fingers fingers - For simplification, in the example of
FIG. 1 , only five fingers (threefirst fingers second fingers 320, 322) have been shown.Substrate 300 may however comprise a plurality of other first and second fingers interposed, still in the example ofFIG. 1 , betweenfirst finger 312 andsecond finger 322. -
Substrate 300 may thus comprise any number of first fingers and any number of second fingers. The numbers of first and of second fingers may be different.Substrate 300 may, for example, comprise eight first fingers and seven second fingers. -
Substrate 300 preferably comprises at least two first fingers and at least one second finger.FIG. 1 shows asubstrate 300 comprising an odd number of first fingers and an even number of second fingers. However, in practice,substrate 300 may equally well comprise even or odd numbers of first and second fingers. -
FIG. 2 schematically shows a perspective cross-section view along plane AA ofFIG. 1 . Cross-section plane AA is perpendicular to direction X of first andsecond fingers - In
FIG. 2 ,substrate 300 comprises, under itsupper surface 302, a well 330. Well 330 is laterally delimited by a peripheral insulatingwall 340. In the cross-section view ofFIG. 2 , only the walls of insulatingwall 340 which are parallel to axis X are visible. Insulatingwall 340 comprises, in this example, a first area 3400 (Bottom Iso) and a second area 3402 (Top Iso) stacked in a third vertical direction (Z). -
Substrate 300 is made of a material of a first conductivity type, for example, p-type doped single crystal silicon. Peripheral insulatingwall 340 is of the same conductivity type assubstrate 300, here of type p. Still in this example,first area 3400 is formed from a p-type buried layer.Second area 3402 is formed from another layer, also of type p. - Alternatively, well 330 has a thickness substantially equal to that of
second area 3402 andwall 340 then comprises only thissecond area 3402. - Well 330 is formed, preferably, by epitaxy (by epitaxial growth) of a doped material of a second conductivity type, different from the first conductivity type. Well 330 is made, for example, of n-type silicon. Well 330 thus is of a conductivity type different from:
- the conductivity type of
substrate 300; and - the conductivity type of
wall 340. -
Substrate 300 is passivated at its surface and thus comprises, inFIG. 2 , asurface passivation layer 350. Theupper surface 302 ofsubstrate 300 thus corresponds, in the present example, to the upper surface of itspassivation layer 350. - In
FIG. 2 , athird area 360 is formed at the interface between the lower surface of well 330 andsubstrate 300.Third area 360 extends along direction Y and stops before peripheral insulatingwall 340. In this example,area 360 is formed from an n-type buried layer. -
First regions second regions passivation layer 350 ofsubstrate 300. First andsecond regions FIG. 2 : -
first regions first fingers -
second regions second fingers -
First fingers cross passivation layer 350 ofsubstrate 300 to respectively contactfirst regions second fingers cross passivation layer 350 ofsubstrate 300 to respectively contactsecond regions - In
FIG. 2 , athird region 390 extends underfirst regions second regions passivation layer 350 ofsubstrate 300.Third region 390 stops, in second direction Y, before peripheral insulatingwall 340. -
First regions second regions Third region 390 is of the same conductivity type assubstrate 300, in the present example, of type p. -
Third region 390 thus forms, withfirst regions second regions FIG. 2 ,first regions second region 380, andthird region 390 jointly form alateral transistor 500, here of type NPN, also calledNPN lateral transistor 500. In the present example: -
first regions transistor 500; -
second region 380 forms an emitter region oftransistor 500; -
third region 390 forms a base region oftransistor 500; and -
first region 374 andsecond region 382 respectively form a collector region and an emitter region of another NPN lateral transistor similar totransistor 500 and partially shown inFIG. 2 . -
First fingers collector regions lateral NPN transistor 500.Second finger 320, connected toemitter region 380, forms an emitter contact oflateral NPN transistor 500.Base region 390 being connected to no contacting track, it is said to be the “floating base” oftransistor 500. -
FIG. 3 schematically shows a perspective and cross-section view along plane BB ofFIG. 1 . Cross-section plane BB is parallel to direction X of first andsecond fingers FIG. 3 , onlyfirst finger 310,second finger 320, and a portion offirst finger 312 are shown, plane BB (FIG. 1 ) approximately crossingsubstrate 300 in the middle offirst finger 312. - In
FIG. 3 , well 300 is still laterally delimited by peripheral insulatingwall 340. In the cross-section view ofFIG. 3 , only the walls of insulatingwall 340 which are parallel to axis X are visible. Insulatingwall 340 still comprises, in the present example, a stacked first area 3400 (Bottom Iso) and second area 3402 (Top Iso). -
Third area 360 extends along direction X and stops before peripheral insulatingwall 340. - According to this embodiment,
wall 340 is widened, in a first direction X parallel tocollector regions regions 380 and 382 (onlycollector region 372 can be seen in the cross-section view ofFIG. 3 ), so thatbase region 390 penetrates intowall 340. - In
FIG. 3 ,base region 390 penetrates intowall 340 over a distance, noted D, in the range from approximately 20% to approximately 50% of the length, noted L, ofbase region 390 in first direction X, preferably over a distance D in the range from 20% to 50% of length L of theregion 390 in first direction X.Base region 390 continues, more preferably, intowall 340 over a distance D of approximately 30% of length L ofbase region 390 in first direction X, even more preferably over a distance D equal to 30% of length L ofregion 390 in first direction X. - Alternatively,
base region 390 only penetrates intosecond area 3402 ofwall 340.First area 3400 can, where appropriate, have a width smaller than the width ofsecond area 3402, these widths both being evaluated along first direction X. - A
device 100 comprising one or a plurality of transistors similar tolateral NPN transistor 500 may be used to protect at least one integrated circuit and/or one discrete electronic component against electrostatic discharges.Device 100 is, for example, capable of protecting input/output circuits against electrostatic discharges which may occur thereacross. - To protect one or a plurality of input/output circuits, each comprising a terminal set to a reference potential (for example, the ground), noted GND, and another terminal taken to a non-zero potential, noted IO, one, for example, couples or connects:
- the
collector contacts transistor 500 to the terminal taken to potential IO; and - the
emitter contact 320 oftransistor 500 to the terminal taken to ground GND. -
FIG. 4 shows an electrical circuit equivalent to the embodiment ofdevice 100 discussed in relation withFIGS. 1 to 3 . - It is considered hereafter for simplification that
device 100 comprises a singlelateral NPN transistor 500 as discussed in relation withFIGS. 2 and 3 .Transistor 500 ofdevice 100 comprises, in the equivalent electrical circuit ofFIG. 4 : - a collector terminal 502 (C);
- a floating base 504 (B); and
- an emitter terminal 506 (E).
- According to the embodiment discussed in relation with
FIGS. 2 and 3 : - the
collector terminal 502 oftransistor 500 is, for example, formed by contactingtracks first collector regions - the floating
base 504 oftransistor 500 is, for example, formed bybase region 390; and - the
emitter terminal 506 oftransistor 500 is, for example, formed by contactingtrack 320 connected to thesecond emitter region 380. - The
transistor 500 ofdevice 100 also comprises, as illustrated inFIG. 4 : - a
first Zener diode 510 having its anode connected to the floatingbase 504 oftransistor 500 and having its cathode connected to thecollector terminal 502 oftransistor 500; and - a
second Zener diode 512 having its anode connected to floatingbase 504 oftransistor 500 and having its cathode connected to theemitter terminal 506 oftransistor 500. - In the example of a
device 100 capable of protecting one or a plurality of input/output circuits against electrostatic discharges: - the
collector terminal 502 oftransistor 500 is connected to an input/output terminal (IO) of the circuit(s) to be protected; and - the
emitter terminal 506 oftransistor 500 is set to ground GND. -
FIG. 5 shows a current-vs.-voltage characteristic of an embodiment of a device of protection against electrostatic discharges, for example, adevice 100 comprising at least onelateral NPN transistor 500. The current-vs.-voltage characteristic ofFIG. 5 , for example, corresponds to the equivalent circuit discussed in relation withFIG. 4 . - A
curve 700 reflects, inFIG. 5 , an intensity variation of a direct electric current, noted IF, or a reverse current, noted IR, flowing throughNPN lateral transistor 500. Such an intensity is a function of a direct bias voltage, noted VF, or of a reverse bias voltage, noted VR. -
Curve 700 thus is, inFIG. 5 , divided into two portions: - a
portion 700F (on the right-hand side, inFIG. 5 ) corresponding to variations of the direct current IF according to forward bias voltage VF; and - a
portion 700R (on the left-hand side inFIG. 5 ) corresponding to variations of reverse current IR according to reverse bias voltage VR. -
Portions curve 700 are, to within their sign, substantially identical. For simplification,only portion 700F will be described hereafter, the transposition of such a description toportion 700R ofcurve 700 being within the abilities of those skilled in the art based on the following indications. - In normal operation, the direct bias voltage VF of
device 100 may take values in the range from 0 V to a limiting voltage, noted VRM. Limiting voltage VRM corresponds to the maximum voltage value provided for a given application. Limiting voltage VRM is, for example, in the order of 3 V or of 5 V according to the considered application. Whentransistor 500 is biased under limiting voltage VRM, a leakage current, noted IRM, flows throughtransistor 500. - In case of an overvoltage due, for example, to an electrostatic discharge, bias voltage VF may temporarily exceed a threshold voltage, noted VTRIG. Threshold voltage VTRIG corresponds to a voltage for triggering the protection. To avoid any risk of untimely triggering of the protection, it is ascertained that threshold voltage VTRIG is greater than the limiting voltage VRM provided in the considered application.
- Once threshold voltage VTRIG has been exceeded, that is, once the protection has been triggered, a snap-back effect occurs. Such a snap-back phenomenon causes a significant decrease of the bias voltage across
transistor 500. After the snap back, bias voltage VF may thus decrease to a minimum voltage value, called “hold value,” noted VHOLD. In other words, hold voltage VHOLD corresponds to the minimum voltage capable of being reached after the triggering of the protection. - The snap-back phenomenon enables
transistor 500 to discharge an electric current substantially greater than the current that it would conduct, before the snap-back, under a voltage of same value. In other words, the snapback phenomenon enablestransistor 500 to convey a significant current while limiting the voltage increase (the temporary overvoltage) caused by the electrostatic discharge. By thus limiting the voltage increase, risks of deterioration of one or a plurality of circuits and/or components protected bytransistor 500 are decreased. - The electrostatic discharge may however be sufficient for the direct bias voltage VF of
transistor 500 to keep on increasing even after the triggering of the protection. Such an increase in voltage VF goes along with an increase in the current IF crossingtransistor 500. Current IF, which crossestransistor 500, is then substantially proportional to direct bias voltage VF according to a relation of the type IF=VF/RDYN, where RDYN is called “dynamic resistance” of the protection. - As illustrated in
FIG. 5 , the value of the direct bias voltage VF may then increase up to a value, noted VCL, called clamping voltage. Clamping voltage VCL corresponds to a maximum intensity acceptable by the protection (peak pulse current), noted IPP. - For certain applications, it is desired to obtain a hold voltage VHOLD greater than limiting voltage VRM. The inventors have observed that it is possible to modify the value of hold voltage VHOLD by adjusting the doping level of the base regions and of the emitter regions of
transistor 500. In particular, the inventors have observed that an increase in the doping level of the base and emitter regions oftransistor 500 causes a decrease in hold voltage VHOLD. - For a
transistor 500 having itsbase region 390 penetrating into peripheral insulating wall 340 (FIG. 3 ), the inventors have further observed that it is possible to decrease trigger voltage VTRIG without degrading the quality of the protection. This decrease in trigger voltage VTRIG means that the protection is faster and more reactive. The decrease in trigger voltage VTRIG can further reduce the residual clamping voltage VCL seen by the application prior to complete activation of the structure. In other words, the inventors have observed that it is possible to obtain a more sensitive protection by improving the value of its dynamic resistance RDYN,device 100 having an improved series resistance due to the presence of twoZener diodes 510 and 512 (FIG. 4 ) in parallel. - As discussed in relation with
FIG. 3 , a base region continuing insidewall 340 over a distance D of approximately 30% of length L ofbase region 390 in first direction X enables, in particular, to obtain a decrease in clamping voltage VCL by approximately 8.5% for a same current IF. In other words,transistor 500 is capable, under a same voltage VF, to convey a greater current IF than a transistor having abase region 390 which would not penetrate into peripheral insulatingwall 340. - A device of protection against electrostatic discharges, comprising at least one
device 100 as described above in relation withFIGS. 1 to 3 , makes it possible in particular to obtain a hold voltage VHOLD greater than 5 V while maintaining a blocking voltage VCL of less than 7 V. Such a device of protection is thus compatible with applications for which the limit voltage VRM is between about 0 V and about 5 V, preferably between 0 V and 5 V. The value of the desired holding voltage VHOLD is obtained by the presence of the twoZener diodes 510 and 512 (FIG. 4 ). - Various embodiments and variations have been described. It will be understood by those skilled in the art that certain characteristics of these various embodiments and variations may be combined, and other variations will occur to those skilled in the art. In particular, what has been previously described in relation with
FIGS. 1 to 5 takes as an example an embodiment of adevice 100 comprising at least one lateral NPN-type transistor 500. However, the conductivity types (the dopings) taken as an example in the present disclosure may be reversed. In particular, the adaptation of such an embodiment to adevice 100 comprising at least one lateral PNP-type transistor is within the abilities of those skilled in the art based on the indications provided hereabove. - Finally, the practical implementation of the described embodiments and variations is within the abilities of those skilled in the art based on the functional indications given hereabove. In particular, the connection of the contacting tracks of the transistor(s) 500 comprised in
device 100 across the circuit(s) and/or of the discrete components to be protected is within the abilities of those skilled in the art based on the above indications. - The various embodiments described above can be combined to provide further embodiments. These and other changes can be made to the embodiments in light of the above-detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the disclosure.
Claims (20)
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US6501632B1 (en) * | 1999-08-06 | 2002-12-31 | Sarnoff Corporation | Apparatus for providing high performance electrostatic discharge protection |
US6696731B2 (en) * | 2002-07-26 | 2004-02-24 | Micrel, Inc. | ESD protection device for enhancing reliability and for providing control of ESD trigger voltage |
US20050224882A1 (en) * | 2004-04-08 | 2005-10-13 | International Business Machines Corporation | Low trigger voltage esd nmosfet triple-well cmos devices |
JP2010129893A (en) * | 2008-11-28 | 2010-06-10 | Sony Corp | Semiconductor integrated circuit |
JP2013073992A (en) * | 2011-09-27 | 2013-04-22 | Semiconductor Components Industries Llc | Semiconductor device |
US10483257B2 (en) * | 2014-02-18 | 2019-11-19 | Nxp Usa, Inc. | Low voltage NPN with low trigger voltage and high snap back voltage for ESD protection |
DE102014113989B4 (en) * | 2014-09-26 | 2020-06-04 | Infineon Technologies Ag | Method of manufacturing a bipolar transistor |
US9997510B2 (en) * | 2015-09-09 | 2018-06-12 | Vanguard International Semiconductor Corporation | Semiconductor device layout structure |
US10811497B2 (en) * | 2018-04-17 | 2020-10-20 | Silanna Asia Pte Ltd | Tiled lateral BJT |
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