US20200403178A1 - Display device and method for manufacturing same - Google Patents
Display device and method for manufacturing same Download PDFInfo
- Publication number
- US20200403178A1 US20200403178A1 US16/977,062 US201816977062A US2020403178A1 US 20200403178 A1 US20200403178 A1 US 20200403178A1 US 201816977062 A US201816977062 A US 201816977062A US 2020403178 A1 US2020403178 A1 US 2020403178A1
- Authority
- US
- United States
- Prior art keywords
- inorganic film
- film
- layer
- light
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H01L51/5246—
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H01L27/3276—
-
- H01L51/5253—
-
- H01L51/56—
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H01L2227/323—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Definitions
- the present invention relates to a display device and a method of manufacturing the same.
- organic EL display devices which use organic electroluminescence (EL) elements and are of the self-luminous type, have attracted attention as a display device that can replace the liquid crystal display device.
- a seal structure is proposed to inhibit degradation of the organic EL element due to penetration of, for example, moisture and oxygen.
- the seal structure includes a sealing film covering the organic EL element, and the sealing film is configured by a layered film in which an inorganic film and an organic film are layered.
- PTL 1 discloses an organic EL panel including a sealing film in which a first inorganic film formed by a plasma chemical vapor deposition (CVD) method, a flattening film (resin layer) formed by a sol-gel method by using an ink-jet method or the like, and a second inorganic film formed by a plasma CVD method are layered in order.
- CVD plasma chemical vapor deposition
- an organic EL display device including a sealing film obtained by sequentially laminating a first inorganic film, a flattening film, and a second inorganic film such as the organic EL panel disclosed in PTL 1 described above, since the flattening film (resin layer) is provided relatively thick over the entire display region in which the organic EL element is provided, the overall film thickness of the sealing film is 5 ⁇ m or greater, and thus the flexibility of the device itself is reduced.
- the present invention has been made in view of the above, and an object of the present invention is to improve flexibility of a device itself.
- a display device is a display device including: a base substrate; a light-emitting element provided on one surface side of the base substrate; and a sealing film provided covering the light-emitting element, wherein the sealing film includes a first inorganic film and a second inorganic film sequentially provided covering the light-emitting element, and a resin layer provided in an island shape between the first inorganic film and the second inorganic film.
- the sealing film includes the first inorganic film and the second inorganic film sequentially provided covering the light-emitting element and the resin layer provided in an island shape between the first inorganic film and the second inorganic film, and thus the flexibility of the device itself can be improved.
- FIG. 1 is a plan view of an organic EL display device according to a first embodiment of the present invention.
- FIG. 2 is a plan view of a display region of the organic EL display device according to the first embodiment of the present invention.
- FIG. 3 is an equivalent circuit diagram of a TFT layer included in the organic EL display device according to the first embodiment of the present invention.
- FIG. 4 is a cross-sectional view of the display region of the organic EL display device according to the first embodiment of the present invention.
- FIG. 5 is a cross-sectional view illustrating an organic EL layer included in the organic EL display device according to the first embodiment of the present invention.
- FIG. 6 is a plan view illustrating a substrate in a foreign matter detection step of a method of manufacturing the organic EL display device according to the first embodiment of the present invention.
- FIG. 7 is a plan view of an organic EL display device according to a second embodiment of the present invention.
- FIG. 8 is a cross-sectional view of the organic EL display device taken along the line VIII-VIII in FIG. 7 .
- FIG. 1 to FIG. 6 illustrate a first embodiment of a display device and a method of manufacturing the same according to the present invention.
- an organic EL display device including an organic EL element will be described as a display device including a light-emitting element.
- FIG. 1 is a plan view of an organic EL display device 50 a of the present embodiment.
- FIG. 2 is a plan view of a display region D of the organic EL display device 50 a .
- FIG. 3 is an equivalent circuit diagram of a TFT layer 20 constituting the organic EL display device 50 a .
- FIG. 4 is a cross-sectional view of the display region D of the organic EL display device 50 a .
- FIG. 5 is a cross-sectional view illustrating an organic EL layer 23 constituting the organic EL display device 50 a.
- the organic EL display device 50 a includes the display region D configured to display an image provided in a rectangular shape and a frame region F provided on the periphery of the display region D.
- a plurality of subpixels P are disposed in a matrix configuration in the display region D, as illustrated in FIG. 2 .
- a subpixel P including a light-emitting region Lr configured to execute a red display a subpixel P including a light-emitting region Lg configured to execute a green display
- a subpixel P including a light-emitting region Lb configured to execute a blue display are provided adjacent to one another, as illustrated in FIG. 2 .
- one pixel is constituted of the three adjacent subpixels P including the light-emitting regions Lr, Lg, and Lb, respectively in the display region D.
- a terminal region T is provided at the right end portion of the frame region F in FIG. 1 .
- the organic EL display device 50 a includes a resin substrate layer 10 provided as a base substrate, a thin film transistor (TFT) layer 20 provided on the resin substrate layer 10 , an organic EL element 25 provided as a light-emitting element on the TFT layer 20 , and a sealing film 30 a provided in such a manner as to cover the organic EL element 25 .
- TFT thin film transistor
- the resin substrate layer 10 is formed, for example, of a polyimide resin or the like.
- the TFT layer 20 includes a base coat film 11 provided on the resin substrate layer 10 , a plurality of first TFTs 9 a , a plurality of second TFTs 9 b and a plurality of capacitors 9 c provided on the base coat film 11 , and a flattening film 19 provided on each of the first TFTs 9 a , each of the second TFTs 9 b and each of the capacitors 9 c .
- a plurality of gate lines 14 are provided in such a manner as to extend parallel to each other in a horizontal direction in the figures.
- the TFT layer 20 as illustrated in FIG. 2 and FIG.
- each subpixel P includes the first TFT 9 a , the second TFT 9 b , and the capacitor 9 c.
- the base coat film 11 is made up of a single-layer film or a layered film of an inorganic insulating film of, for example, silicon nitride, silicon oxide, silicon oxynitride, or the like.
- the first TFT 9 a is connected to the corresponding gate line 14 and source line 18 f in each subpixel P as illustrated in FIG. 3 .
- the first TFT 9 a includes a semiconductor layer 12 a , a gate insulating film 13 , a gate electrode 14 a , a first interlayer insulating film 15 , a second interlayer insulating film 17 , and a source electrode 18 a and a drain electrode 18 b , provided in that order on the base coat film 11 .
- the semiconductor layer 12 a includes a channel region, a source region, and a drain region, provided in an island shape on the base coat film 11 , as described below. As illustrated in FIG.
- the gate insulating film 13 is provided in such a manner as to cover the semiconductor layer 12 a .
- the gate electrode 14 a is provided on the gate insulating film 13 in such a manner as to overlap with the channel region of the semiconductor layer 12 a .
- the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided in such a manner as to cover the gate electrode 14 a .
- the source electrode 18 a and the drain electrode 18 b are provided in such a manner as to be separated from each other on the second interlayer insulating film 17 .
- FIG. 4 illustrates the gate insulating film 13 in such a manner as to cover the semiconductor layer 12 a .
- the source electrode 18 a and the drain electrode 18 b are connected to the source region and the drain region of the semiconductor layer 12 a , respectively, via each contact hole formed in the layered film of the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 .
- the gate insulating film 13 , the first interlayer insulating film 15 and the second interlayer insulating film 17 are made up of a single-layer film or a layered film of an inorganic insulating film of, for example, silicon nitride, silicon oxide, silicon oxynitride, or the like.
- the second TFT 9 b is connected to the corresponding first TFT 9 a and power source line 18 g in each subpixel P as illustrated in FIG. 3 .
- the first TFT 9 b includes a semiconductor layer 12 b , a gate insulating film 13 , a gate electrode 14 b , a first interlayer insulating film 15 , a second interlayer insulating film 17 , and a source electrode 18 c and a drain electrode 18 d , provided in that order on the base coat film 11 .
- the semiconductor layer 12 b includes a channel region, a source region, and a drain region, provided in an island shape on the base coat film 11 , as described below. As illustrated in FIG.
- the gate insulating film 13 is provided in such a manner as to cover the semiconductor layer 12 b .
- the gate electrode 14 b is provided on the gate insulating film 13 in such a manner as to overlap with the channel region of the semiconductor layer 12 b .
- the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided in such a manner as to cover the gate electrode 14 b .
- the source electrode 18 c and the drain electrode 18 d are provided in such a manner as to be separated from each other on the second interlayer insulating film 17 .
- FIG. 4 illustrates the gate insulating film 13 in such a manner as to cover the semiconductor layer 12 b .
- the source electrode 18 c and the drain electrode 18 d are connected to the source region and the drain region of the semiconductor layer 12 b , respectively, via each contact hole formed in the layered film of the gate insulating film 13 , the first interlayer insulating film 15 , and the second interlayer insulating film 17 .
- first TFT 9 a and the second TFT 9 b are described as being of a top-gate type; however, the first TFT 9 a and the second TFT 9 b may be a bottom-gate type TFT.
- the capacitor 9 c is connected to the corresponding first TFT 9 a and power source line 18 g in each subpixel P as illustrated in FIG. 3 .
- the capacitor 9 c includes, as illustrated in FIG. 4 , a lower conductive layer 14 c formed of the same material and in the same layer as those of the gate electrode 14 a or the like, the first interlayer insulating film 15 provided in such a manner as to cover the lower conductive layer 14 c , and an upper conductive layer 16 provided on the first interlayer insulating film 15 in such a manner as to overlap the lower conductive layer 14 c .
- the upper conductive layer 16 is connected to the power source line 18 g through a contact hole formed in the second interlayer insulating film 17 as illustrated in FIG. 4 .
- the flattening film 19 is formed of, for example, an organic resin material, such as a polyimide resin.
- the organic EL element 25 includes, as illustrated in FIG. 4 , a plurality of first electrodes 21 , an edge cover 22 , a plurality of organic EL layers 23 , and a second electrode 24 that are provided sequentially on the flattening film 19 .
- the plurality of first electrodes 21 are provided, each corresponding to each of the plurality of subpixels P, in a matrix pattern over the flattening film 19 .
- the first electrode 21 is connected to the drain electrode 18 d of each second TFT 9 b via a contact hole formed in the flattening film 19 .
- the first electrode 21 functions to inject holes (positive holes) into the organic EL layer 23 .
- the first electrode 21 is preferably formed of a material having a large work function to improve the hole injection efficiency into the organic EL layer 23 .
- examples of the materials constituting the first electrode 21 include metallic materials, as examples, such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), and tin (Sn).
- the materials constituting the first electrode 21 may be an alloy such as astatine (At)/astatine oxide (AtO 2 ), for example.
- the materials constituting the first electrode 21 there may be adopted electrically conductive oxides, as examples, such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO).
- the first electrode 21 may be formed by layering a plurality of layers formed of any of the materials described above.
- examples of compound materials having a large work function include, for example, indium tin oxide (ITO) and indium zinc oxide (IZO).
- the edge cover 22 is provided in the form of a lattice in such a manner as to cover a circumferential edge portion of each first electrode 21 .
- the edge cover 22 there are raised organic films of, for example, polyimide resin, acrylic resin, polysiloxane resin, and novolak resin.
- each organic EL layer 23 includes a hole injection layer 1 , a hole transport layer 2 , a light-emitting layer 3 , an electron transport layer 4 , and an electron injection layer 5 , which are provided sequentially in that order over the first electrode 21 .
- the hole injection layer 1 is also referred to as an anode electrode buffer layer, and functions to reduce an energy level difference between the first electrode 21 and the organic EL layer 23 to thereby improve the hole injection efficiency into the organic EL layer 23 from the first electrode 21 .
- Examples of materials that may be included in the hole injection layer 1 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.
- the hole transport layer 2 functions to improve the efficiency of hole transport from the first electrode 21 to the organic EL layer 23 .
- materials that may be included in the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide.
- the light-emitting layer 3 is a region where holes and electrons are injected from the first electrode 21 and the second electrode 24 , respectively, and the holes and the electrons recombine, when a voltage is applied via the first electrode 21 and the second electrode 24 .
- the light-emitting layer 3 is formed of a material having high luminous efficiency.
- Examples of materials that may be included in the light-emitting layer 3 include metal oxinoid compounds (8-hydroxyquinoline metal complexes), naphthalene derivatives, anthracene derivatives, diphenyl ethylene derivatives, vinyl acetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, trisstyrylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, aquidine derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylenevinylene, and polysilane.
- the electron transport layer 4 functions to facilitate migration of electrons to the light-emitting layer 3 efficiently.
- materials constituting the electron transport layer 4 include oxadiazole derivative, triazole derivative, benzoquinone derivative, naphthoquinone derivative, anthraquinone derivative, tetracyanoanthraquinodimethane derivative, diphenoquinone derivative, fluorenone derivative, silole derivative, and metal oxinoid compound, as organic compounds.
- the electron injection layer 5 functions to reduce an energy level difference between the second electrode 24 and the organic EL layer 23 to thereby improve the efficiency of electron injection into the organic EL layer 23 from the second electrode 24 , and the electron injection layer 5 can lower the drive voltage of the organic EL element 25 by this function.
- the electron injection layer 5 is also referred to as a cathode buffer layer.
- examples of materials that may constitute the electron injection layer 5 include inorganic alkaline compounds, such as lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), and barium fluoride (BaF 2 ), aluminum oxide (Al 2 O 3 ), and strontium oxide (SrO).
- the second electrode 24 is provided to cover each organic EL layer 23 and edge cover 22 as a common electrode.
- the second electrode 24 functions to inject electrons into the organic EL layer 23 .
- the second electrode 24 is preferably formed of a material having a small work function to improve the efficiency of electron injection into the organic EL layer 23 .
- materials constituting the second electrode 24 include, for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF).
- the second electrode 24 may be formed of alloys of magnesium (Mg)/copper (Cu), magnesium (Mg)/silver (Ag), sodium (Na)/potassium (K), astatine (At)/astatine oxide (AtO 2 ), lithium (Li)/aluminum (Al), lithium (Li)/calcium (Ca)/aluminum (Al), and lithium fluoride (LiF)/calcium (Ca)/aluminum (Al), for example.
- the second electrode 24 may be formed of an electrically conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO).
- the second electrode 24 may be formed by layering a plurality of layers of any of the materials described above.
- materials having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg)/copper (Cu), magnesium (Mg)/silver (Ag), sodium (Na)/potassium (K), lithium (Li)/aluminum (Al), lithium (Li)/calcium (Ca)/aluminum (Al), and lithium fluoride (LiF)/calcium (Ca)/aluminum (Al).
- the sealing film 30 a includes a first inorganic film 26 and a second inorganic film 28 , which are sequentially provided in such a manner as to cover (the second electrode 24 of) the organic EL element 25 , and a plurality of resin layers 27 provided in an island shape in such a manner as to be spaced apart from each other between the first inorganic film 26 and the second inorganic film 28 , and functions to protect the organic EL layer 23 from moisture and oxygen.
- the first inorganic film 26 and the second inorganic film 28 are formed, for example, to have a thickness less than 1 ⁇ m, from inorganic materials such as a silicon nitride film.
- the refractive indices of the first inorganic film 26 and the second inorganic film 28 are, for example, approximately 1.76 to 1.86.
- FIG. 4 a configuration in which a foreign matter X adheres to the surface of the first inorganic film 26 on the second inorganic film 28 side is exemplified.
- the foreign matter X may be attached to the surface of the second electrode 24 of the organic EL element 25 or to both the surface of the second electrode 24 of the organic EL element 25 and the surface of the first inorganic film 26 on the second inorganic film 28 side.
- the resin layer 27 includes, for example, an organic resin material such as a polypropylene resin and an additive added to the organic resin material. As illustrated in FIG. 4 , the resin layer 27 is provided in such a manner as to cover the foreign matter X.
- the refractive index of the resin layer 27 is, for example, approximately 1.79
- the refractive index difference between the first inorganic film 26 and the second inorganic film 28 is less than 0.1.
- the additive include silane coupling agents.
- the resin layer 27 of a polypropylene resin containing, for example, a silane coupling agent as an additive at 0.1 wt. % to 20 wt. % has a refractive index of 1.79.
- a gate signal is inputted into the first TFT 9 a via the gate line 14 to thereby turn on the first TFT 9 a , a predetermined voltage corresponding to a source signal is written in the gate electrode 14 b of the second TFT 9 b and the capacitor 9 c via the source line 18 f , and the current from the power source line 18 g specified based on a gate voltage of the second TFT 9 b is supplied to the organic EL layer 23 , whereby the light-emitting layer 3 of the organic EL layer 23 emits light to display an image.
- the organic EL display device 50 a since even in a case where the first TFT 9 a is turned off, the gate voltage of the second TFT 9 b is held by the capacitor 9 c , so the light-emitting layer 3 is kept emitting light until a gate signal of the next frame is inputted.
- FIG. 6 is a plan view illustrating a substrate B in a foreign matter detection step of the method of manufacturing the organic EL display device 50 a .
- the method of manufacturing the organic EL display device 50 a according to the present embodiment includes a TFT layer formation step, an organic EL element formation step, a sealing film formation step including a first inorganic film formation step, a foreign matter detection step, a position storage step, a resin layer formation step and a second inorganic film formation step, and a flexing step.
- the TFT layer 20 is formed on the surface of the resin substrate layer 10 formed on the glass substrate by forming the base coat film 11 , the first TFT 9 a , the second TFT 9 b , the capacitor 9 c , and the flattening film 19 by using a known method.
- the organic EL element 25 is formed on the TFT layer 20 formed in the TFT layer formation step described above by forming the first electrode 21 , the edge cover 22 , the organic EL layer 23 (the hole injection layer 1 , the hole transport layer 2 , the light-emitting layer 3 , the electron transport layer 4 , and the electron injection layer 5 ) and the second electrode 24 by using a known method.
- the first inorganic film 26 is formed, for example, by forming an inorganic insulating film such as a silicon nitride film at the thickness of approximately 500 nm through plasma CVD or the like, in such a manner as to cover the organic EL element 25 formed by the organic EL element formation step described above (first inorganic film formation step).
- an inorganic insulating film such as a silicon nitride film at the thickness of approximately 500 nm through plasma CVD or the like
- the surface of the substrate B on which the first inorganic film 26 is formed is inspected by using an Automated Optical Inspection (AOI) device including a charge coupled device (CCD) camera.
- AOI Automated Optical Inspection
- CCD charge coupled device
- the locations of foreign matters X adhering to the surface of the first inorganic film 26 are detected (foreign matter detection step).
- the positions (foreign matter position information) of the foreign matters X is stored in a memory electrically connected to the automated optical inspection device and an inkjet coating device (position storage step).
- the resin layer 27 having a thickness of 1 ⁇ m is formed, for example, by ejecting an organic resin material such as a polypropylene resin containing an additive, for example, by an ink-jet method, at the positions of the foreign matters X stored in the position storage step described above (resin layer formation step).
- an inorganic insulating film such as a silicon nitride film at a thickness of approximately 500 nm, for example, through plasma CVD or the like in such a manner as to cover the resin layer 27 formed in the resin layer formation step described above, the second inorganic film 28 is formed and the sealing film 30 a is formed (second inorganic film formation step).
- the glass substrate is peeled from the lower face of the resin substrate layer 10 by irradiating with laser light from the glass substrate side of the resin substrate layer 10 , and a back face side protective sheet (not illustrated) is further applied to the lower face of the resin substrate layer 10 where the glass substrate is peeled.
- the organic EL display device 50 a of the present embodiment can be manufactured in this manner.
- the sealing film 30 a includes the first inorganic film 26 and the second inorganic film 28 that are sequentially provided so that the sealing film 30 a covers the organic EL element 25 , and the resin layer 27 provided in an island shape between the first inorganic film 26 and the second inorganic film 28 , the overall thickness of the sealing film 30 a can be made thinner than a case that the resin layer 27 is provided throughout the display region D between the first inorganic film 26 and the second inorganic film 28 .
- the flexibility of the sealing film 30 a that occupies a relatively large proportion of the device thickness can be improved, so the flexibility of the device itself can be improved in the organic EL display device 50 a.
- the organic EL display device 50 a and the method of manufacturing the same of the present embodiment since the refractive index difference between the resin layer 27 and the first inorganic film 26 and the second inorganic film 28 is less than 0.1, the resin layer 27 is hardly visible in the display region D, and the display quality of the organic EL display device 50 a can be ensured.
- the resin layer 27 is provided in such a manner as to cover the foreign matters X, the foreign matters X are difficult to break through the second inorganic film 28 , and sealing performance by the sealing film 30 a can be ensured. As a result, the deterioration of the organic EL element 25 can be suppressed in the organic EL display device 50 a.
- FIG. 7 and FIG. 8 illustrate a second embodiment of a display device and a method of manufacturing the same according to the present invention.
- FIG. 7 is a plan view of an organic EL display device 50 b of the present embodiment.
- FIG. 8 is a cross-sectional view of the organic EL display device 50 b taken along the line VIII-VIII in FIG. 7 . Note that, in the following embodiments, portions identical to those in FIG. 1 to FIG. 6 are denoted by the same reference signs, and their detailed descriptions are omitted.
- an organic EL display device 50 a provided with a resin layer 27 formed by an ink-jet method is exemplified, but in the present embodiment, an organic EL display device 50 b provided with resin layers 27 and 27 a formed by an ink-jet method is exemplified.
- the organic EL display device 50 b includes a display region D provided into a rectangle shape and a frame region F provided around the display region D, and a terminal region T is provided at the right end portion of the frame region F in FIG. 7 .
- the organic EL display device 50 b includes a resin substrate layer 10 , a TFT layer 20 provided on the resin substrate layer 10 , an organic EL element 25 provided as a light-emitting element on the TFT layer 20 , and a sealing film 30 b provided in such a manner as to cover the organic EL element 25 .
- the flattening film 19 constituting the TFT layer 20 includes a slit Sa that penetrates the flattening film 19 in such a manner as to surround the display region D, in the frame region F.
- the edge cover 22 constituting the organic EL element 25 includes a slit Sb that penetrates the edge cover 22 in such a manner as to surround the display region D, in the frame region F.
- the slit Sb is provided in such a manner as to overlap the slit Sa, and constitutes the slit S together with the slit Sa.
- the slit S is provided in approximately a U shape in such a manner as to surround the display region D, as illustrated in FIG. 7 .
- a source conductive layer 18 h formed from the same material to the same layer as the source electrode 18 a or the like is provided as a wiring line layer, and an anode electrode conductive layer 21 a formed by the same material to the same layer as the first electrode 21 is provided as a wiring line relay layer.
- the source conductive layer 18 h is provided in a substantially frame shape in a plan view, and as illustrated in FIG. 8 , a part of the source conductive layer 18 h is exposed from the slit Sa formed in the flattening film 19 . As illustrated in FIG.
- the anode electrode conductive layer 21 a is provided in such a manner as to cover both end surfaces and edges of the slit Sa formed in the flattening film 19 and the source conductive layer 18 h exposed from the slit Sa, and is electrically connected to the source conductive layer 18 h.
- the second electrode 24 constituting the organic EL element 25 is provided in such a manner as to cover the end surface of the display region D side of the slit Sb formed in the edge cover 22 and a portion of the upper surface of the anode electrode conductive layer 21 a exposed from the slit Sb, and is electrically connected to the anode electrode conductive layer 21 a .
- the second electrode 24 is electrically connected to the source conductive layer 18 h via the slits S (slits Sa and Sb).
- the sealing film 30 b includes a first inorganic film 26 and a second inorganic film 28 that are sequentially provided in such a manner as to cover the organic EL element 25 , a plurality of resin layers 27 (see FIG. 4 ) provided between the first inorganic film 26 and the second inorganic film 28 in the display region D, and a resin layer 27 a provided in a frame shape between the first inorganic film 26 and the second inorganic film 28 in the frame region F. Similar to the sealing film 30 a described in the first embodiment described above, the sealing film 30 b has a function of protecting the organic EL layer 23 from moisture and oxygen.
- the resin layer 27 a is formed from the same material to the same layer as the resin layer 27 , and is provided in such a manner as to be filled to the inside of the slit S via the first inorganic film 26 , as illustrated in FIG. 8 .
- the second inorganic film 28 is provided in such a manner as to cover the resin layer 27 a in the frame region F.
- an organic EL display device 50 b having a configuration in which the resin layer 27 a is filled to the inside of the slit S is exemplified, but in the organic EL display device 50 a of the first embodiment described above, the first inorganic film 26 and the second inorganic film 28 are layered inside the slit S without the resin layer 27 a being filled into the slit S.
- the organic EL display device 50 b described above is flexible and displays an image by causing a light-emitting layer 3 of the organic EL layer 23 to emit light as required via the first TFT 9 a and the second TFT 9 b in each subpixel P.
- the organic EL display device 50 b of the present embodiment can be manufactured, by modifying the pattern shapes of the conductive films in forming the source electrode 18 a , the first electrode 21 and the second electrode 24 , and also forming the resin layer 27 a by an ink-jet method in forming the resin layer 27 , in the method for manufacturing the organic EL display device 50 a of the first embodiment described above.
- the sealing film 30 b includes the first inorganic film 26 and the second inorganic film 28 that are sequentially provided so that the sealing film 30 b covers the organic EL element 25 , and the resin layer 27 provided in an island shape between the first inorganic film 26 and the second inorganic film 28 , the overall thickness of the sealing film 30 b can be made thinner than a case that the resin layer 27 is provided throughout the display region D between the first inorganic film 26 and the second inorganic film 28 .
- the flexibility of the sealing film 30 b that occupies a relatively large proportion of the device thickness can be improved, so the flexibility of the device itself can be improved in the organic EL display device 50 b.
- the organic EL display device 50 b and the method of manufacturing the same of the present embodiment since the refractive index difference between the resin layer 27 and the first inorganic film 26 and the second inorganic film 28 is less than 0.1, the resin layer 27 is hardly visible in the display region D, and the display quality of the organic EL display device 50 b can be ensured.
- the resin layer 27 is provided in such a manner as to cover the foreign matters X, the foreign matters X are difficult to break through the second inorganic film 28 , and sealing performance by the sealing film 30 b can be ensured. As a result, the deterioration of the organic EL element 25 can be suppressed in the organic EL display device 50 b.
- the second inorganic film 28 can be formed without stepped (cut by step) even in a case where the slit S is formed deep.
- the organic EL display device 50 b and the method of manufacturing the same of the present embodiment since the refractive index difference between the resin layer 27 a and the first inorganic film 26 and the second inorganic film 28 is less than 0.1, variations in the appearance of the display region D from the sides away from the front can be suppressed.
- the example of the organic EL layer including the five-layer structure including the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer is given. It is also possible that, for example, the organic EL layer may include a three-layer structure including a hole injection-cum-transport layer, a light-emitting layer, and an electron transport-cum-injection layer.
- the organic EL display device including the first electrode as an anode electrode and the second electrode as a cathode electrode is exemplified.
- the present invention is also applicable to an organic EL display device, in which the layers of the structure of the organic EL layer are in the reverse order, with the first electrode being a cathode electrode and the second electrode being an anode electrode.
- the organic EL display device including an element substrate, in which the electrode of the TFT connected to the first electrode serves as the drain electrode is exemplified.
- the present invention is also applicable to an organic EL display device including an element substrate, in which the electrode of the TFT connected to the first electrode is referred to as the source electrode.
- the examples of organic EL display devices described as display device are given.
- the present invention is applicable to a display device including a plurality of light-emitting elements that are driven by electrical current.
- the disclosure is applicable to display devices including quantum dot light-emitting diodes (QLEDs), which are light-emitting elements using a quantum dot-containing layer.
- QLEDs quantum dot light-emitting diodes
- the present invention is useful for a flexible display device.
Abstract
Description
- The present invention relates to a display device and a method of manufacturing the same.
- In recent years, organic EL display devices, which use organic electroluminescence (EL) elements and are of the self-luminous type, have attracted attention as a display device that can replace the liquid crystal display device. For the organic EL display device, a seal structure is proposed to inhibit degradation of the organic EL element due to penetration of, for example, moisture and oxygen. The seal structure includes a sealing film covering the organic EL element, and the sealing film is configured by a layered film in which an inorganic film and an organic film are layered.
- For example, PTL 1 discloses an organic EL panel including a sealing film in which a first inorganic film formed by a plasma chemical vapor deposition (CVD) method, a flattening film (resin layer) formed by a sol-gel method by using an ink-jet method or the like, and a second inorganic film formed by a plasma CVD method are layered in order.
- PTL 1: JP 2014-241241 A
- In an organic EL display device including a sealing film obtained by sequentially laminating a first inorganic film, a flattening film, and a second inorganic film such as the organic EL panel disclosed in PTL 1 described above, since the flattening film (resin layer) is provided relatively thick over the entire display region in which the organic EL element is provided, the overall film thickness of the sealing film is 5 μm or greater, and thus the flexibility of the device itself is reduced.
- The present invention has been made in view of the above, and an object of the present invention is to improve flexibility of a device itself.
- In order to achieve the object described above, a display device according to the present invention is a display device including: a base substrate; a light-emitting element provided on one surface side of the base substrate; and a sealing film provided covering the light-emitting element, wherein the sealing film includes a first inorganic film and a second inorganic film sequentially provided covering the light-emitting element, and a resin layer provided in an island shape between the first inorganic film and the second inorganic film.
- According to the present invention, the sealing film includes the first inorganic film and the second inorganic film sequentially provided covering the light-emitting element and the resin layer provided in an island shape between the first inorganic film and the second inorganic film, and thus the flexibility of the device itself can be improved.
-
FIG. 1 is a plan view of an organic EL display device according to a first embodiment of the present invention. -
FIG. 2 is a plan view of a display region of the organic EL display device according to the first embodiment of the present invention. -
FIG. 3 is an equivalent circuit diagram of a TFT layer included in the organic EL display device according to the first embodiment of the present invention. -
FIG. 4 is a cross-sectional view of the display region of the organic EL display device according to the first embodiment of the present invention. -
FIG. 5 is a cross-sectional view illustrating an organic EL layer included in the organic EL display device according to the first embodiment of the present invention. -
FIG. 6 is a plan view illustrating a substrate in a foreign matter detection step of a method of manufacturing the organic EL display device according to the first embodiment of the present invention. -
FIG. 7 is a plan view of an organic EL display device according to a second embodiment of the present invention. -
FIG. 8 is a cross-sectional view of the organic EL display device taken along the line VIII-VIII inFIG. 7 . - Embodiments of the present invention will be described below in detail with reference to the drawings. Note that the present invention is not limited to the embodiments described below.
-
FIG. 1 toFIG. 6 illustrate a first embodiment of a display device and a method of manufacturing the same according to the present invention. Note that, in each of the following embodiments, an organic EL display device including an organic EL element will be described as a display device including a light-emitting element. Here,FIG. 1 is a plan view of an organicEL display device 50 a of the present embodiment.FIG. 2 is a plan view of a display region D of the organicEL display device 50 a.FIG. 3 is an equivalent circuit diagram of aTFT layer 20 constituting the organicEL display device 50 a.FIG. 4 is a cross-sectional view of the display region D of the organicEL display device 50 a.FIG. 5 is a cross-sectional view illustrating anorganic EL layer 23 constituting the organicEL display device 50 a. - As illustrated in
FIG. 1 , the organicEL display device 50 a includes the display region D configured to display an image provided in a rectangular shape and a frame region F provided on the periphery of the display region D. Here, a plurality of subpixels P are disposed in a matrix configuration in the display region D, as illustrated inFIG. 2 . In the display region D, a subpixel P including a light-emitting region Lr configured to execute a red display, a subpixel P including a light-emitting region Lg configured to execute a green display, and a subpixel P including a light-emitting region Lb configured to execute a blue display are provided adjacent to one another, as illustrated inFIG. 2 . Note that one pixel is constituted of the three adjacent subpixels P including the light-emitting regions Lr, Lg, and Lb, respectively in the display region D. A terminal region T is provided at the right end portion of the frame region F inFIG. 1 . - As illustrated in
FIG. 4 , the organicEL display device 50 a includes aresin substrate layer 10 provided as a base substrate, a thin film transistor (TFT)layer 20 provided on theresin substrate layer 10, anorganic EL element 25 provided as a light-emitting element on theTFT layer 20, and asealing film 30 a provided in such a manner as to cover theorganic EL element 25. - The
resin substrate layer 10 is formed, for example, of a polyimide resin or the like. - As illustrated in
FIG. 4 , theTFT layer 20 includes abase coat film 11 provided on theresin substrate layer 10, a plurality offirst TFTs 9 a, a plurality ofsecond TFTs 9 b and a plurality ofcapacitors 9 c provided on thebase coat film 11, and aflattening film 19 provided on each of thefirst TFTs 9 a, each of thesecond TFTs 9 b and each of thecapacitors 9 c. Here, in theTFT layer 20, as illustrated inFIG. 2 andFIG. 3 , a plurality ofgate lines 14 are provided in such a manner as to extend parallel to each other in a horizontal direction in the figures. In theTFT layer 20, as illustrated inFIG. 2 andFIG. 3 , a plurality ofsource lines 18 f are provided in such a manner as to extend parallel to each other in a vertical direction in the figures. In theTFT layer 20, as illustrated inFIG. 2 andFIG. 3 , a plurality ofpower source lines 18 g are provided in such a manner as to extend parallel to each other in the vertical direction in the figures, and each ofpower source lines 18 g are disposed adjacent to each of thesource lines 18 f. In theTFT layer 20, as illustrated inFIG. 3 , each subpixel P includes thefirst TFT 9 a, thesecond TFT 9 b, and thecapacitor 9 c. - The
base coat film 11 is made up of a single-layer film or a layered film of an inorganic insulating film of, for example, silicon nitride, silicon oxide, silicon oxynitride, or the like. - The
first TFT 9 a is connected to thecorresponding gate line 14 andsource line 18 f in each subpixel P as illustrated inFIG. 3 . As illustrated inFIG. 4 , the first TFT 9 a includes asemiconductor layer 12 a, a gateinsulating film 13, agate electrode 14 a, a first interlayerinsulating film 15, a second interlayerinsulating film 17, and asource electrode 18 a and adrain electrode 18 b, provided in that order on thebase coat film 11. Here, as illustrated inFIG. 4 , thesemiconductor layer 12 a includes a channel region, a source region, and a drain region, provided in an island shape on thebase coat film 11, as described below. As illustrated inFIG. 4 , thegate insulating film 13 is provided in such a manner as to cover thesemiconductor layer 12 a. As illustrated inFIG. 4 , thegate electrode 14 a is provided on thegate insulating film 13 in such a manner as to overlap with the channel region of thesemiconductor layer 12 a. As illustrated inFIG. 4 , the first interlayerinsulating film 15 and the secondinterlayer insulating film 17 are sequentially provided in such a manner as to cover thegate electrode 14 a. As illustrated inFIG. 4 , thesource electrode 18 a and thedrain electrode 18 b are provided in such a manner as to be separated from each other on the secondinterlayer insulating film 17. As illustrated inFIG. 4 , thesource electrode 18 a and thedrain electrode 18 b are connected to the source region and the drain region of thesemiconductor layer 12 a, respectively, via each contact hole formed in the layered film of thegate insulating film 13, the firstinterlayer insulating film 15, and the secondinterlayer insulating film 17. Note that, thegate insulating film 13, the firstinterlayer insulating film 15 and the secondinterlayer insulating film 17 are made up of a single-layer film or a layered film of an inorganic insulating film of, for example, silicon nitride, silicon oxide, silicon oxynitride, or the like. - The
second TFT 9 b is connected to the correspondingfirst TFT 9 a andpower source line 18 g in each subpixel P as illustrated inFIG. 3 . As illustrated inFIG. 4 , the first TFT 9 b includes asemiconductor layer 12 b, a gateinsulating film 13, agate electrode 14 b, a first interlayerinsulating film 15, a second interlayerinsulating film 17, and asource electrode 18 c and adrain electrode 18 d, provided in that order on thebase coat film 11. Here, as illustrated inFIG. 4 , thesemiconductor layer 12 b includes a channel region, a source region, and a drain region, provided in an island shape on thebase coat film 11, as described below. As illustrated inFIG. 4 , thegate insulating film 13 is provided in such a manner as to cover thesemiconductor layer 12 b. As illustrated inFIG. 4 , thegate electrode 14 b is provided on thegate insulating film 13 in such a manner as to overlap with the channel region of thesemiconductor layer 12 b. As illustrated inFIG. 4 , the first interlayerinsulating film 15 and the second interlayerinsulating film 17 are sequentially provided in such a manner as to cover thegate electrode 14 b. As illustrated inFIG. 4 , thesource electrode 18 c and thedrain electrode 18 d are provided in such a manner as to be separated from each other on the secondinterlayer insulating film 17. As illustrated inFIG. 4 , thesource electrode 18 c and thedrain electrode 18 d are connected to the source region and the drain region of thesemiconductor layer 12 b, respectively, via each contact hole formed in the layered film of thegate insulating film 13, the firstinterlayer insulating film 15, and the secondinterlayer insulating film 17. - Note that, in this embodiment, the
first TFT 9 a and thesecond TFT 9 b are described as being of a top-gate type; however, thefirst TFT 9 a and thesecond TFT 9 b may be a bottom-gate type TFT. - The
capacitor 9 c is connected to the correspondingfirst TFT 9 a andpower source line 18 g in each subpixel P as illustrated inFIG. 3 . Here, thecapacitor 9 c includes, as illustrated inFIG. 4 , a lowerconductive layer 14 c formed of the same material and in the same layer as those of thegate electrode 14 a or the like, the firstinterlayer insulating film 15 provided in such a manner as to cover the lowerconductive layer 14 c, and an upperconductive layer 16 provided on the firstinterlayer insulating film 15 in such a manner as to overlap the lowerconductive layer 14 c. Note that, the upperconductive layer 16 is connected to thepower source line 18 g through a contact hole formed in the secondinterlayer insulating film 17 as illustrated inFIG. 4 . - The flattening
film 19 is formed of, for example, an organic resin material, such as a polyimide resin. - The
organic EL element 25 includes, as illustrated inFIG. 4 , a plurality offirst electrodes 21, anedge cover 22, a plurality of organic EL layers 23, and asecond electrode 24 that are provided sequentially on the flatteningfilm 19. - As illustrated in
FIG. 4 , the plurality offirst electrodes 21 are provided, each corresponding to each of the plurality of subpixels P, in a matrix pattern over the flatteningfilm 19. As illustrated inFIG. 4 , thefirst electrode 21 is connected to thedrain electrode 18 d of eachsecond TFT 9 b via a contact hole formed in the flatteningfilm 19. Thefirst electrode 21 functions to inject holes (positive holes) into theorganic EL layer 23. Thefirst electrode 21 is preferably formed of a material having a large work function to improve the hole injection efficiency into theorganic EL layer 23. Here, examples of the materials constituting thefirst electrode 21 include metallic materials, as examples, such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), and tin (Sn). The materials constituting thefirst electrode 21 may be an alloy such as astatine (At)/astatine oxide (AtO2), for example. For the materials constituting thefirst electrode 21, there may be adopted electrically conductive oxides, as examples, such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). Thefirst electrode 21 may be formed by layering a plurality of layers formed of any of the materials described above. Note that, examples of compound materials having a large work function include, for example, indium tin oxide (ITO) and indium zinc oxide (IZO). - As illustrated in
FIG. 4 , theedge cover 22 is provided in the form of a lattice in such a manner as to cover a circumferential edge portion of eachfirst electrode 21. For the materials making up theedge cover 22, there are raised organic films of, for example, polyimide resin, acrylic resin, polysiloxane resin, and novolak resin. - As illustrated in
FIG. 4 , the plurality of organic EL layers 23 are disposed on each of thefirst electrodes 21 and are each provided in a matrix shape so as to correspond to the plurality of subpixels. As illustrated inFIG. 5 , eachorganic EL layer 23 includes a hole injection layer 1, ahole transport layer 2, a light-emitting layer 3, anelectron transport layer 4, and anelectron injection layer 5, which are provided sequentially in that order over thefirst electrode 21. - The hole injection layer 1 is also referred to as an anode electrode buffer layer, and functions to reduce an energy level difference between the
first electrode 21 and theorganic EL layer 23 to thereby improve the hole injection efficiency into theorganic EL layer 23 from thefirst electrode 21. Examples of materials that may be included in the hole injection layer 1 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives. - The
hole transport layer 2 functions to improve the efficiency of hole transport from thefirst electrode 21 to theorganic EL layer 23. Here, examples of materials that may be included in thehole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide. - The light-emitting layer 3 is a region where holes and electrons are injected from the
first electrode 21 and thesecond electrode 24, respectively, and the holes and the electrons recombine, when a voltage is applied via thefirst electrode 21 and thesecond electrode 24. The light-emitting layer 3 is formed of a material having high luminous efficiency. Examples of materials that may be included in the light-emitting layer 3 include metal oxinoid compounds (8-hydroxyquinoline metal complexes), naphthalene derivatives, anthracene derivatives, diphenyl ethylene derivatives, vinyl acetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzothiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, trisstyrylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, aquidine derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylenevinylene, and polysilane. - The
electron transport layer 4 functions to facilitate migration of electrons to the light-emitting layer 3 efficiently. Examples of materials constituting theelectron transport layer 4 include oxadiazole derivative, triazole derivative, benzoquinone derivative, naphthoquinone derivative, anthraquinone derivative, tetracyanoanthraquinodimethane derivative, diphenoquinone derivative, fluorenone derivative, silole derivative, and metal oxinoid compound, as organic compounds. - The
electron injection layer 5 functions to reduce an energy level difference between thesecond electrode 24 and theorganic EL layer 23 to thereby improve the efficiency of electron injection into theorganic EL layer 23 from thesecond electrode 24, and theelectron injection layer 5 can lower the drive voltage of theorganic EL element 25 by this function. Note that theelectron injection layer 5 is also referred to as a cathode buffer layer. Here, examples of materials that may constitute theelectron injection layer 5 include inorganic alkaline compounds, such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), and barium fluoride (BaF2), aluminum oxide (Al2O3), and strontium oxide (SrO). - As illustrated in
FIG. 4 , thesecond electrode 24 is provided to cover eachorganic EL layer 23 andedge cover 22 as a common electrode. Thesecond electrode 24 functions to inject electrons into theorganic EL layer 23. Thesecond electrode 24 is preferably formed of a material having a small work function to improve the efficiency of electron injection into theorganic EL layer 23. For materials constituting thesecond electrode 24 include, for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), and lithium fluoride (LiF). Thesecond electrode 24 may be formed of alloys of magnesium (Mg)/copper (Cu), magnesium (Mg)/silver (Ag), sodium (Na)/potassium (K), astatine (At)/astatine oxide (AtO2), lithium (Li)/aluminum (Al), lithium (Li)/calcium (Ca)/aluminum (Al), and lithium fluoride (LiF)/calcium (Ca)/aluminum (Al), for example. Thesecond electrode 24 may be formed of an electrically conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). Thesecond electrode 24 may be formed by layering a plurality of layers of any of the materials described above. Note that, examples of materials having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg)/copper (Cu), magnesium (Mg)/silver (Ag), sodium (Na)/potassium (K), lithium (Li)/aluminum (Al), lithium (Li)/calcium (Ca)/aluminum (Al), and lithium fluoride (LiF)/calcium (Ca)/aluminum (Al). - As illustrated in
FIG. 4 , the sealingfilm 30 a includes a firstinorganic film 26 and a secondinorganic film 28, which are sequentially provided in such a manner as to cover (thesecond electrode 24 of) theorganic EL element 25, and a plurality of resin layers 27 provided in an island shape in such a manner as to be spaced apart from each other between the firstinorganic film 26 and the secondinorganic film 28, and functions to protect theorganic EL layer 23 from moisture and oxygen. - The first
inorganic film 26 and the secondinorganic film 28 are formed, for example, to have a thickness less than 1 μm, from inorganic materials such as a silicon nitride film. Here, the refractive indices of the firstinorganic film 26 and the secondinorganic film 28 are, for example, approximately 1.76 to 1.86. Note that in the present embodiment, as illustrated inFIG. 4 , a configuration in which a foreign matter X adheres to the surface of the firstinorganic film 26 on the secondinorganic film 28 side is exemplified. However, the foreign matter X may be attached to the surface of thesecond electrode 24 of theorganic EL element 25 or to both the surface of thesecond electrode 24 of theorganic EL element 25 and the surface of the firstinorganic film 26 on the secondinorganic film 28 side. - The
resin layer 27 includes, for example, an organic resin material such as a polypropylene resin and an additive added to the organic resin material. As illustrated inFIG. 4 , theresin layer 27 is provided in such a manner as to cover the foreign matter X. Here, the refractive index of theresin layer 27 is, for example, approximately 1.79, and the refractive index difference between the firstinorganic film 26 and the secondinorganic film 28 is less than 0.1. Examples of the additive include silane coupling agents. Specifically, theresin layer 27 of a polypropylene resin containing, for example, a silane coupling agent as an additive at 0.1 wt. % to 20 wt. %, has a refractive index of 1.79. - In the organic
EL display device 50 a described heretofore, in each subpixel P, a gate signal is inputted into thefirst TFT 9 a via thegate line 14 to thereby turn on thefirst TFT 9 a, a predetermined voltage corresponding to a source signal is written in thegate electrode 14 b of thesecond TFT 9 b and thecapacitor 9 c via thesource line 18 f, and the current from thepower source line 18 g specified based on a gate voltage of thesecond TFT 9 b is supplied to theorganic EL layer 23, whereby the light-emitting layer 3 of theorganic EL layer 23 emits light to display an image. Note that, in the organicEL display device 50 a, since even in a case where thefirst TFT 9 a is turned off, the gate voltage of thesecond TFT 9 b is held by thecapacitor 9 c, so the light-emitting layer 3 is kept emitting light until a gate signal of the next frame is inputted. - A method of manufacturing the organic
EL display device 50 a according to the present embodiment will be described next. Here,FIG. 6 is a plan view illustrating a substrate B in a foreign matter detection step of the method of manufacturing the organicEL display device 50 a. Note that the method of manufacturing the organicEL display device 50 a according to the present embodiment includes a TFT layer formation step, an organic EL element formation step, a sealing film formation step including a first inorganic film formation step, a foreign matter detection step, a position storage step, a resin layer formation step and a second inorganic film formation step, and a flexing step. - For example, the
TFT layer 20 is formed on the surface of theresin substrate layer 10 formed on the glass substrate by forming thebase coat film 11, thefirst TFT 9 a, thesecond TFT 9 b, thecapacitor 9 c, and the flatteningfilm 19 by using a known method. - The
organic EL element 25 is formed on theTFT layer 20 formed in the TFT layer formation step described above by forming thefirst electrode 21, theedge cover 22, the organic EL layer 23 (the hole injection layer 1, thehole transport layer 2, the light-emitting layer 3, theelectron transport layer 4, and the electron injection layer 5) and thesecond electrode 24 by using a known method. - At first, the first
inorganic film 26 is formed, for example, by forming an inorganic insulating film such as a silicon nitride film at the thickness of approximately 500 nm through plasma CVD or the like, in such a manner as to cover theorganic EL element 25 formed by the organic EL element formation step described above (first inorganic film formation step). - Subsequently, the surface of the substrate B on which the first
inorganic film 26 is formed is inspected by using an Automated Optical Inspection (AOI) device including a charge coupled device (CCD) camera. As illustrated inFIG. 6 , the locations of foreign matters X adhering to the surface of the firstinorganic film 26 are detected (foreign matter detection step). At this time, the positions (foreign matter position information) of the foreign matters X is stored in a memory electrically connected to the automated optical inspection device and an inkjet coating device (position storage step). - Furthermore, the
resin layer 27 having a thickness of 1 μm is formed, for example, by ejecting an organic resin material such as a polypropylene resin containing an additive, for example, by an ink-jet method, at the positions of the foreign matters X stored in the position storage step described above (resin layer formation step). - Finally, by forming an inorganic insulating film such as a silicon nitride film at a thickness of approximately 500 nm, for example, through plasma CVD or the like in such a manner as to cover the
resin layer 27 formed in the resin layer formation step described above, the secondinorganic film 28 is formed and the sealingfilm 30 a is formed (second inorganic film formation step). - After a surface side protective sheet (not illustrated) is applied to the surface of the sealing
film 30 a formed in the sealing film formation step described above, the glass substrate is peeled from the lower face of theresin substrate layer 10 by irradiating with laser light from the glass substrate side of theresin substrate layer 10, and a back face side protective sheet (not illustrated) is further applied to the lower face of theresin substrate layer 10 where the glass substrate is peeled. - The organic
EL display device 50 a of the present embodiment can be manufactured in this manner. - As described above, according to the organic
EL display device 50 a and the method of manufacturing the same of the present embodiment, since the sealingfilm 30 a includes the firstinorganic film 26 and the secondinorganic film 28 that are sequentially provided so that the sealingfilm 30 a covers theorganic EL element 25, and theresin layer 27 provided in an island shape between the firstinorganic film 26 and the secondinorganic film 28, the overall thickness of the sealingfilm 30 a can be made thinner than a case that theresin layer 27 is provided throughout the display region D between the firstinorganic film 26 and the secondinorganic film 28. As a result, in the organicEL display device 50 a, the flexibility of the sealingfilm 30 a that occupies a relatively large proportion of the device thickness can be improved, so the flexibility of the device itself can be improved in the organicEL display device 50 a. - According to the organic
EL display device 50 a and the method of manufacturing the same of the present embodiment, since the refractive index difference between theresin layer 27 and the firstinorganic film 26 and the secondinorganic film 28 is less than 0.1, theresin layer 27 is hardly visible in the display region D, and the display quality of the organicEL display device 50 a can be ensured. - According to the organic
EL display device 50 a and the method of manufacturing the same of the present embodiment, since theresin layer 27 is provided in such a manner as to cover the foreign matters X, the foreign matters X are difficult to break through the secondinorganic film 28, and sealing performance by the sealingfilm 30 a can be ensured. As a result, the deterioration of theorganic EL element 25 can be suppressed in the organicEL display device 50 a. -
FIG. 7 andFIG. 8 illustrate a second embodiment of a display device and a method of manufacturing the same according to the present invention. Here,FIG. 7 is a plan view of an organicEL display device 50 b of the present embodiment.FIG. 8 is a cross-sectional view of the organicEL display device 50 b taken along the line VIII-VIII inFIG. 7 . Note that, in the following embodiments, portions identical to those inFIG. 1 toFIG. 6 are denoted by the same reference signs, and their detailed descriptions are omitted. - In the first embodiment described above, an organic
EL display device 50 a provided with aresin layer 27 formed by an ink-jet method is exemplified, but in the present embodiment, an organicEL display device 50 b provided withresin layers - As illustrated in
FIG. 7 , like the organicEL display device 50 a described in the first embodiment described above, the organicEL display device 50 b includes a display region D provided into a rectangle shape and a frame region F provided around the display region D, and a terminal region T is provided at the right end portion of the frame region F inFIG. 7 . - As illustrated in
FIG. 8 , the organicEL display device 50 b includes aresin substrate layer 10, aTFT layer 20 provided on theresin substrate layer 10, anorganic EL element 25 provided as a light-emitting element on theTFT layer 20, and a sealingfilm 30 b provided in such a manner as to cover theorganic EL element 25. - As illustrated in
FIG. 8 , the flatteningfilm 19 constituting theTFT layer 20 includes a slit Sa that penetrates the flatteningfilm 19 in such a manner as to surround the display region D, in the frame region F. - As illustrated in
FIG. 8 , theedge cover 22 constituting theorganic EL element 25 includes a slit Sb that penetrates theedge cover 22 in such a manner as to surround the display region D, in the frame region F. Here, as illustrated inFIG. 8 , the slit Sb is provided in such a manner as to overlap the slit Sa, and constitutes the slit S together with the slit Sa. Note that the slit S is provided in approximately a U shape in such a manner as to surround the display region D, as illustrated inFIG. 7 . - As illustrated in
FIG. 8 , in the frame region F, a sourceconductive layer 18 h formed from the same material to the same layer as thesource electrode 18 a or the like is provided as a wiring line layer, and an anode electrodeconductive layer 21 a formed by the same material to the same layer as thefirst electrode 21 is provided as a wiring line relay layer. Here, the sourceconductive layer 18 h is provided in a substantially frame shape in a plan view, and as illustrated inFIG. 8 , a part of the sourceconductive layer 18 h is exposed from the slit Sa formed in the flatteningfilm 19. As illustrated inFIG. 8 , the anode electrodeconductive layer 21 a is provided in such a manner as to cover both end surfaces and edges of the slit Sa formed in the flatteningfilm 19 and the sourceconductive layer 18 h exposed from the slit Sa, and is electrically connected to the sourceconductive layer 18 h. - As illustrated in
FIG. 8 , thesecond electrode 24 constituting theorganic EL element 25 is provided in such a manner as to cover the end surface of the display region D side of the slit Sb formed in theedge cover 22 and a portion of the upper surface of the anode electrodeconductive layer 21 a exposed from the slit Sb, and is electrically connected to the anode electrodeconductive layer 21 a. In other words, as illustrated inFIG. 8 , thesecond electrode 24 is electrically connected to the sourceconductive layer 18 h via the slits S (slits Sa and Sb). - As illustrated in
FIG. 8 , the sealingfilm 30 b includes a firstinorganic film 26 and a secondinorganic film 28 that are sequentially provided in such a manner as to cover theorganic EL element 25, a plurality of resin layers 27 (seeFIG. 4 ) provided between the firstinorganic film 26 and the secondinorganic film 28 in the display region D, and aresin layer 27 a provided in a frame shape between the firstinorganic film 26 and the secondinorganic film 28 in the frame region F. Similar to the sealingfilm 30 a described in the first embodiment described above, the sealingfilm 30 b has a function of protecting theorganic EL layer 23 from moisture and oxygen. - The
resin layer 27 a is formed from the same material to the same layer as theresin layer 27, and is provided in such a manner as to be filled to the inside of the slit S via the firstinorganic film 26, as illustrated inFIG. 8 . Here, as illustrated inFIG. 8 , the secondinorganic film 28 is provided in such a manner as to cover theresin layer 27 a in the frame region F. Note that in the present embodiment, an organicEL display device 50 b having a configuration in which theresin layer 27 a is filled to the inside of the slit S is exemplified, but in the organicEL display device 50 a of the first embodiment described above, the firstinorganic film 26 and the secondinorganic film 28 are layered inside the slit S without theresin layer 27 a being filled into the slit S. - Similar to the organic
EL display device 50 a described in the first embodiment described above, the organicEL display device 50 b described above is flexible and displays an image by causing a light-emitting layer 3 of theorganic EL layer 23 to emit light as required via thefirst TFT 9 a and thesecond TFT 9 b in each subpixel P. - The organic
EL display device 50 b of the present embodiment can be manufactured, by modifying the pattern shapes of the conductive films in forming thesource electrode 18 a, thefirst electrode 21 and thesecond electrode 24, and also forming theresin layer 27 a by an ink-jet method in forming theresin layer 27, in the method for manufacturing the organicEL display device 50 a of the first embodiment described above. - As described above, according to the organic
EL display device 50 b and the method of manufacturing the same of the present embodiment, since the sealingfilm 30 b includes the firstinorganic film 26 and the secondinorganic film 28 that are sequentially provided so that the sealingfilm 30 b covers theorganic EL element 25, and theresin layer 27 provided in an island shape between the firstinorganic film 26 and the secondinorganic film 28, the overall thickness of the sealingfilm 30 b can be made thinner than a case that theresin layer 27 is provided throughout the display region D between the firstinorganic film 26 and the secondinorganic film 28. As a result, in the organicEL display device 50 b, the flexibility of the sealingfilm 30 b that occupies a relatively large proportion of the device thickness can be improved, so the flexibility of the device itself can be improved in the organicEL display device 50 b. - According to the organic
EL display device 50 b and the method of manufacturing the same of the present embodiment, since the refractive index difference between theresin layer 27 and the firstinorganic film 26 and the secondinorganic film 28 is less than 0.1, theresin layer 27 is hardly visible in the display region D, and the display quality of the organicEL display device 50 b can be ensured. - According to the organic
EL display device 50 b and the method of manufacturing the same of the present embodiment, since theresin layer 27 is provided in such a manner as to cover the foreign matters X, the foreign matters X are difficult to break through the secondinorganic film 28, and sealing performance by the sealingfilm 30 b can be ensured. As a result, the deterioration of theorganic EL element 25 can be suppressed in the organicEL display device 50 b. - According to the organic
EL display device 50 b and the method of manufacturing the same of the present embodiment, since theresin layer 27 a is filled into the slit S via the firstinorganic film 26, the secondinorganic film 28 can be formed without stepped (cut by step) even in a case where the slit S is formed deep. - According to the organic
EL display device 50 b and the method of manufacturing the same of the present embodiment, since the refractive index difference between theresin layer 27 a and the firstinorganic film 26 and the secondinorganic film 28 is less than 0.1, variations in the appearance of the display region D from the sides away from the front can be suppressed. - In the above-described embodiments, the example of the organic EL layer including the five-layer structure including the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer is given. It is also possible that, for example, the organic EL layer may include a three-layer structure including a hole injection-cum-transport layer, a light-emitting layer, and an electron transport-cum-injection layer.
- In each of the embodiments described above, the organic EL display device including the first electrode as an anode electrode and the second electrode as a cathode electrode is exemplified. The present invention is also applicable to an organic EL display device, in which the layers of the structure of the organic EL layer are in the reverse order, with the first electrode being a cathode electrode and the second electrode being an anode electrode.
- In each of the embodiments described above, the organic EL display device including an element substrate, in which the electrode of the TFT connected to the first electrode serves as the drain electrode, is exemplified. The present invention is also applicable to an organic EL display device including an element substrate, in which the electrode of the TFT connected to the first electrode is referred to as the source electrode.
- In the above-described embodiments, the examples of organic EL display devices described as display device are given. However, the present invention is applicable to a display device including a plurality of light-emitting elements that are driven by electrical current. For example, the disclosure is applicable to display devices including quantum dot light-emitting diodes (QLEDs), which are light-emitting elements using a quantum dot-containing layer.
- As described above, the present invention is useful for a flexible display device.
-
- D Display region
- F Frame region
- S Slit
- X Foreign matter
- 10 Resin substrate layer (base substrate)
- 18 h Source conductive layer (wiring line layer)
- 19 Flattening film
- 20 TFT layer
- 24 Second electrode (common electrode)
- 25 Organic EL element (light-emitting element)
- 26 First inorganic film
- 27 Resin layer
- 27 a Resin layer (second resin layer)
- 28 Second inorganic film
- 30 a, 30 b Sealing film
- 50 a, 50 b Organic EL display device
Claims (17)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/009250 WO2019171584A1 (en) | 2018-03-09 | 2018-03-09 | Display device and method for manufacturing same |
Publications (2)
Publication Number | Publication Date |
---|---|
US20200403178A1 true US20200403178A1 (en) | 2020-12-24 |
US11522157B2 US11522157B2 (en) | 2022-12-06 |
Family
ID=67847150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/977,062 Active 2038-09-18 US11522157B2 (en) | 2018-03-09 | 2018-03-09 | Display device comprising sealing film provided covering light-emitting element |
Country Status (2)
Country | Link |
---|---|
US (1) | US11522157B2 (en) |
WO (1) | WO2019171584A1 (en) |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7109653B2 (en) * | 2002-01-15 | 2006-09-19 | Seiko Epson Corporation | Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element |
JP2004039448A (en) | 2002-07-03 | 2004-02-05 | Sony Corp | Display device, electronic appliance, and method of manufacturing display device |
JP6101458B2 (en) * | 2012-09-10 | 2017-03-22 | 株式会社カネカ | Organic EL module and laying structure of organic EL module |
JP6054763B2 (en) * | 2013-02-12 | 2016-12-27 | 株式会社ジャパンディスプレイ | Organic EL display device |
JP6191260B2 (en) | 2013-06-12 | 2017-09-06 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
JP6169439B2 (en) * | 2013-08-21 | 2017-07-26 | 株式会社ジャパンディスプレイ | Organic electroluminescence display device and manufacturing method thereof |
JP5761293B2 (en) * | 2013-10-02 | 2015-08-12 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
JP6497858B2 (en) * | 2014-07-11 | 2019-04-10 | 株式会社ジャパンディスプレイ | Organic EL display device and method of manufacturing organic EL display device |
US10270061B2 (en) * | 2015-03-03 | 2019-04-23 | Sharp Kabushiki Kaisha | Electroluminescent device and manufacturing method |
JP2017151313A (en) | 2016-02-25 | 2017-08-31 | 株式会社ジャパンディスプレイ | Method for manufacturing display device |
KR102595919B1 (en) * | 2016-05-09 | 2023-10-31 | 삼성디스플레이 주식회사 | Display apparatus |
-
2018
- 2018-03-09 WO PCT/JP2018/009250 patent/WO2019171584A1/en active Application Filing
- 2018-03-09 US US16/977,062 patent/US11522157B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2019171584A1 (en) | 2019-09-12 |
US11522157B2 (en) | 2022-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2019130480A1 (en) | Display device and method for manufacturing same | |
US11957015B2 (en) | Display device | |
US10971566B2 (en) | Display device including frame wiring in bending section | |
US20190326383A1 (en) | Display device | |
US11889728B2 (en) | Display device | |
US11659746B2 (en) | Display device | |
US11545541B2 (en) | Display device including light emitting element including reflection electrode on which multiple metallic conductive layers are stacked and method for manufacturing same | |
US11793041B2 (en) | Display device having a slit passing through the second flattening film | |
US20220190289A1 (en) | Display device | |
US10636855B2 (en) | Display device | |
US11508797B2 (en) | Display device including island-shaped inorganic films | |
US11963384B2 (en) | Display device and method for manufacturing same | |
US20220130929A1 (en) | Display device | |
US11508792B2 (en) | Display device and method for manufacturing display device | |
US20210098559A1 (en) | Display device | |
US11380222B2 (en) | Display device | |
US20220006049A1 (en) | Display device and production method thereof | |
US11522157B2 (en) | Display device comprising sealing film provided covering light-emitting element | |
US11430856B2 (en) | Display device with island-shaped conductors overlapping wiring lines in bending portion | |
US11417862B2 (en) | Display device including lead wiring lines covered by first and second organic films, and production method therefor | |
US11018214B2 (en) | Display device | |
WO2019142261A1 (en) | Display device and method for manufacturing same | |
US20220037449A1 (en) | Display device | |
WO2020059126A1 (en) | Display device | |
US20230006010A1 (en) | Display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SHARP KABUSHIKI KAISHA, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ABE, KAORU;REEL/FRAME:053649/0409 Effective date: 20200821 |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT VERIFIED |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |