US20200312732A1 - Chip scale package structure and method of forming the same - Google Patents
Chip scale package structure and method of forming the same Download PDFInfo
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- US20200312732A1 US20200312732A1 US16/903,458 US202016903458A US2020312732A1 US 20200312732 A1 US20200312732 A1 US 20200312732A1 US 202016903458 A US202016903458 A US 202016903458A US 2020312732 A1 US2020312732 A1 US 2020312732A1
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- insulating layer
- protective insulating
- semiconductor package
- passivation layer
- package structure
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Definitions
- the present invention relates to semiconductor package technology, and in particular to a wafer level chip scale package (WLCSP) structure.
- WLCSP wafer level chip scale package
- Integrated circuit (IC) devices are fabricated in a semiconductor wafer and divided into individual chips. Afterwards, those chips are assembled in package form to be used in electronic products.
- the package provides a structure to support the chip and protect the chip from the environment.
- the package also provides electrical connections to and from the chip.
- a chip scale package (CSP) technology has been developed to satisfy the industry's demands (e.g., the smaller chip size and form factor).
- a wafer level package (WLP) technology has also been introduced for the cost-effective fabrication of packages. Such a technology is referred to as wafer-level chip scale package (WLCSP).
- An exemplary embodiment of a semiconductor package structure includes a semiconductor die, a redistribution layer (RDL) structure, a protective insulating layer, and a conductive structure.
- the semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface.
- the RDL structure is on the first surface of the semiconductor die and is electrically coupled to the semiconductor die.
- the protective insulating layer covers the RDL structure, the second surface and the third surface of the semiconductor die.
- the conductive structure passes through the protective insulating layer and is electrically coupled to the RDL structure.
- a semiconductor package structure includes a semiconductor die, a first protective insulating layer, a first redistribution layer (RDL) structure, a first passivation layer, and a plurality of conductive structures.
- the semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface.
- the first protective insulating layer covers the first surface and the third surface of the semiconductor die.
- the first RDL structure is over the first surface of the semiconductor die and is electrically coupled to the semiconductor die and extends to directly above the first protective insulating layer.
- the first passivation layer covers the first protective insulating layer and the first RDL structure.
- the plurality of conductive structures passes through the first passivation layer and is electrically coupled to the first RDL structure.
- a semiconductor package structure includes a semiconductor die, a first redistribution layer (RDL) structure, a first protective insulating layer, a first passivation layer, a second RDL structure, a second passivation layer, and a plurality of conductive structures.
- the semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface.
- the first RDL structure is on the first surface of the semiconductor die and is electrically coupled to the semiconductor die.
- the first protective insulating layer covers the first surface and the third surface of the semiconductor die and surrounds the first RDL structure.
- the first passivation layer covers the first protective insulating layer and the first RDL structure.
- the second RDL structure is electrically coupled to the semiconductor die through the first RDL structure, wherein the second RDL structure extends from the first RDL structure to above the first protective insulating layer.
- the second passivation layer covers the second RDL structure.
- the plurality of conductive structures passes through the second passivation layer and is electrically coupled to the second RDL structure.
- FIGS. 1A to 1F are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments.
- FIG. 2A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 2B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 3A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 3B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIGS. 4A to 4E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments.
- FIG. 5A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 5B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIGS. 6A to 6E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments.
- FIG. 7A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 7B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 8A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 8B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 9A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 9B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIGS. 10A to 10E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments.
- FIG. 10F is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 11A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 11B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 12A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 13A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIG. 13B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- FIGS. 1A to 1F are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments of the disclosure.
- a substrate 100 is provided.
- the substrate 100 may include a plurality of chip regions and a scribe line region that surrounds the plurality of chip regions and separates the adjacent chip regions from each other. To simplify the diagram, only two complete and adjacent chip regions C and a scribe line region S separating these chip regions C are depicted herein.
- the substrate 100 may be a silicon wafer so as to facilitate the wafer-level packaging process.
- the substrate 100 may be a silicon substrate or another semiconductor substrate.
- the chip regions C of the substrate 100 include integrated circuits (not shown) therein.
- an insulating layer 104 is formed on the substrate 100 .
- the insulating layer 104 may serve as an inter-dielectric (ILD) layer, an inter-metal dielectric (IMD) layer, a passivation layer or a combination thereof. To simplify the diagram, only a flat layer is depicted herein.
- the insulating layer 104 is made of an inorganic material, such as silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiON), or a combination thereof, or another suitable insulating material.
- the insulating layer 104 includes one or more conductive pads 102 therein.
- the conductive pads 102 correspond to the chip regions C of the substrate 100 and are adjacent to the upper surface of the substrate 100 .
- the conductive pad 102 may be formed of metal, such as copper, aluminum, or another suitable metal material.
- the ICs in the chip region C is electrically connected to the corresponding conductive pad 102 .
- the aforementioned structure define a number of semiconductor dies/chips after the chip regions C are separated from each other by dicing the scribe line region S of the substrate 100 .
- a conductive layer (not shown), such as a metal layer, is formed on the insulating layer 104 and passing through the insulating layer 104 to electrically couple to the exposed pads 102 in the chip regions C. Afterwards, the conductive layer is patterned to form a redistribution layer (RDL) structure 106 in each of the chip regions C, so that the RDL structure 106 is electrically coupled to the subsequent formed semiconductor die, as shown in FIG. 1A .
- RDL redistribution layer
- the chip regions C are separated from each other by dicing the scribe line region S of the substrate 100 to form semiconductor dies with the RDL structures 106 thereon.
- the formed semiconductor die may be a system on chip (SOC) integrated circuit die.
- the SOC integrated circuit die may include a logic die including a central processing unit (CPU), a graphics processing unit (GPU), a dynamic random access memory (DRAM) controller or any combination thereof.
- Each of semiconductor dies includes a substrate 100 , at least one conductive pad 102 formed on the substrate 100 , and an insulating layer 104 formed over the substrate 100 and having an opening to expose the conductive pad 102 .
- the semiconductor die has a first surface 101 a (e.g., an active surface of the semiconductor die), a second surface 101 b (e.g., a non-active surface of the semiconductor die) opposite the first surface 101 a, and a third surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between the first surface 101 a and the second surface 101 b.
- a first surface 101 a e.g., an active surface of the semiconductor die
- a second surface 101 b e.g., a non-active surface of the semiconductor die
- a third surface 101 c e.g., a sidewall surface of the semiconductor die
- a carrier substrate 200 with an adhesive layer 202 formed thereon is provided.
- the carrier substrate 200 may be made of silicon, glass, ceramic or the like, and may have a shape that is the same or similar to the semiconductor wafer, and therefore the carrier substrate 200 is sometimes referred to as a carrier wafer.
- the adhesive layer 202 may be made of a light-to-heat conversion (LTHC) material or another suitable material.
- LTHC light-to-heat conversion
- the second surface 101 b of each semiconductor die that has an RDL structure 106 formed on the first surface 101 a of the semiconductor die is mounted onto the carrier substrate 200 via the adhesive layer 202 using a pick-and-place process.
- a protective insulating layer 110 is formed to cover the first surface 101 a and the third surface 101 c of the semiconductor dies and to surround the RDL structures 106 , so that each of the formed semiconductor dies with an RDL structure 106 thereon is encapsulated by the protective insulating layer 110 .
- the protective insulating layer 110 protects the semiconductor dies from the environment, thereby preventing the semiconductor die in the subsequently formed semiconductor package structure from damage due to, for example, the stress, the chemicals and/or the moisture.
- the semiconductor dies with RDL structures 106 encapsulated by the protective insulating layer 110 are de-bonded from the carrier substrate 200 , as shown in FIG. 1C .
- a de-bonding process is performed by exposing the adhesive layer 202 (shown in FIG. 1B ) using a laser or UV light when the adhesive layer 202 is made of an LTHC material.
- the LTHC material may be decomposed due to generated heat from the laser or UV light, and hence the carrier substrate 200 is removed from the structure including the semiconductor dies, the RDL structures 106 , and the protective insulating layer 110 .
- the second surface 101 b of each semiconductor die is exposed from the protective insulating layer 110 .
- the resulting structure is shown in FIG. 1C .
- a grinding process is performed on the top surface of the protective insulating layer 110 until the RDL structures 106 are exposed from the protective insulating layer 110 , as shown in FIG. 1D .
- the top surface of the protective insulating layer 110 may be grinded by a chemical mechanical polishing (CMP) process or another suitable grinding process.
- CMP chemical mechanical polishing
- the protective insulating layer 110 and the RDL structures 106 are covered with a passivation layer 112 , as shown in FIG. 1E .
- the passivation layer 112 is formed on the protective insulating layer 110 and the RDL structures 106 by a coating process or another suitable deposition process. Afterwards, the passivation layer 112 is patterned by lithography or a combination of lithograph and etching to form openings that expose the RDL structures 106 .
- the passivation layer 112 is made of a material that is different from the material of the protective insulating layer 110 .
- the passivation layer 112 is made of polyimide or polybenzoxazole (PBO).
- the passivation layer 112 is also divided into several portions, so that each of the semiconductor dies is covered by a respective portion of passivation layer 112 . In some other embodiments, the passivation layer 112 is divided into several portions by the subsequent dicing process.
- conductive structures 120 respectively pass through the passivation layer 112 via those openings formed in the passivation layer 112 , as shown in FIG. 1E .
- the conductive structures 120 fill into the openings formed in the passivation layer 112 , so that each of the conductive structures 120 is electrically coupled to the respective exposed RDL structure 106 under the opening in the passivation layer 112 .
- the conductive structure 120 includes an optional under-bump metallurgy (UBM) layer 122 and a solder bump 124 on the UBM layer 122 .
- the conductive structure 120 includes a conductive bump structure such as a copper bump, a conductive pillar structure, a conductive wire structure, or a conductive paste structure.
- an optional protective insulating layer 130 is formed to cover the exposed second surfaces 101 b of the semiconductor dies, as shown in FIG. 1F .
- the protective insulating layer 130 is sometimes referred to as a die backside film (DBF) that is made of a thermoset material, such as an epoxy resin material.
- the protective insulating layer 130 is made of a material that is the same as the material of the protective insulating layer 110 .
- the protective insulating layer 130 is made of an epoxy molding compound (EMC), an AjinomotoTM Build-up Film (ABF), or an acrylic-based material.
- a singulation is carried out to saw through the formed structure shown in FIG. 1F .
- a dicing process may be performed on the formed structure shown in FIG. 1F .
- multiple separate semiconductor package structures are formed.
- FIG. 2A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- the semiconductor package structure 10 a includes a semiconductor die that includes a substrate 100 , at least one conductive pad 102 formed on the substrate 100 , and an insulating layer 104 formed over the substrate 100 and having an opening to expose the conductive pad 102 , as shown in FIG. 2A .
- the semiconductor die has a first surface 101 a (e.g., an active surface of the semiconductor die), a second surface 101 b (e.g., a non-active surface of the semiconductor die) opposite the first surface 101 a, and a third surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between the first surface 101 a and the second surface 101 b.
- a first surface 101 a e.g., an active surface of the semiconductor die
- a second surface 101 b e.g., a non-active surface of the semiconductor die
- a third surface 101 c e.g., a sidewall surface of the semiconductor die
- the semiconductor package structure 10 a further includes a protective insulating layer 110 that covers the first surface 101 a and the third surface 101 c of the semiconductor die, and a protective insulating layer 130 that covers the second surface 101 b of the semiconductor die.
- the thickness of the portion of the protective insulating layer 110 covering the first surface 101 a and the thickness of the of the portion of the protective insulating layer 110 covering the third surface 101 c of the semiconductor die can be adjusted, so as to fine-tune the protection ability of the semiconductor package structure 10 a.
- the protective insulating layer 110 and the protective insulating layer 130 are made of the same material or different materials.
- a material may include an epoxy molding compound (EMC), an AjinomotoTM Build-up Film (ABF), or an acrylic-based material.
- the protective insulating layer 110 is made of an epoxy molding compound (EMC), an AjinomotoTM Build-up Film (ABF), or an acrylic-based material
- the protective insulating layer 130 is made of a DBF material that includes a thermoset material, such as an epoxy resin material.
- the semiconductor package structure 10 a further includes an RDL structure 106 electrically coupled to the semiconductor die via the conductive pad 102 and surrounded by the protective insulating layer 110 on the first surface 101 a of the semiconductor die.
- the semiconductor package structure 10 a further includes a passivation layer 112 covering the RDL structure 106 and a portion of the protective insulating layer 110 surrounding the RDL structure 106 .
- the passivation layer 112 may be made of polyimide or polybenzoxazole (PBO).
- the semiconductor package structure 10 a further includes at least one conductive structure 120 that includes an optional UBM layer 122 and a solder bump 124 and passes through the passivation layer 112 , so as to be electrically coupled to the semiconductor die through the RDL structure 106 .
- the semiconductor package structure 10 a shown in FIG. 2A is a CSP structure.
- the CSP structure may include an SOC package.
- the semiconductor package structure 10 a may be mounted on a base (not shown).
- the base may include a printed circuit board (PCB) and may be formed of polypropylene (PP).
- the base may include a package substrate.
- the semiconductor package structure 10 a may be mounted on the base by a bonding process.
- the semiconductor package structure 10 a may be mounted on the base by the bonding process and electrically coupled to the base using the conductive structures 120 as connectors.
- FIG. 2B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 2A may be omitted for brevity.
- the semiconductor package structure 10 b is similar to the semiconductor package structure 10 a shown in FIG. 2A . Compared to the semiconductor package structure 10 a, there is no protective insulating layer 130 formed in the package structure 10 b, and hence the second surface 101 b of the semiconductor die is exposed to the environment.
- the semiconductor package structure 10 b is formed by a method that is similar to the method shown in FIGS.
- FIG. 3A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 2A may be omitted for brevity.
- the semiconductor package structure 10 c is similar to the semiconductor package structure 10 a shown in FIG. 2A . Compared to the semiconductor package structure 10 a, the semiconductor package structure 10 c further includes a passivation layer 105 formed between the first surface 101 a of the semiconductor die and the RDL structure 106 and covered by the protective insulating layer 110 .
- the material and the method used for the passivation layer 105 are the same as or similar to those used for the passivation layer 112 .
- the passivation layer 105 is made of polyimide or polybenzoxazole (PBO).
- the semiconductor package structure 10 c is formed by a method that is similar to the method shown in FIGS. 1A to 1F , except that an additional passivation layer 105 is formed prior to the formation of the RDL structure 106 . Prior to the formation of the RDL structure 106 , at least one opening is formed in the passivation layer 105 , so that the passivation layer 105 exposes the conductive pad 102 and surrounds the opening formed in the insulating layer 104 .
- FIG. 3B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIGS. 2A and 3A may be omitted for brevity.
- the semiconductor package structure 10 d is similar to the semiconductor package structure 10 c shown in FIG. 3A . Compared to the semiconductor package structure 10 c, there is no protective insulating layer 130 formed in the package structure 10 d, and hence the second surface 101 b of the semiconductor die is exposed to the environment.
- the semiconductor package structure 10 d is formed by a method that is similar to the method used for forming the semiconductor package structure 10 c, except that the formation of the protective insulating layer 130 is omitted.
- FIGS. 4A to 4E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments of the disclosure. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIGS. 1A to 1F may be omitted for brevity.
- a structure as shown in FIG. 1A is provided.
- a protective insulating layer 110 a is formed to cover the first surface 101 a of each semiconductor die and surround each RDL structure 106 , so that the top surfaces and sidewalls of the RDL structures 106 are covered or encapsulated by the protective insulating layer 110 a.
- the protective insulating layer 110 a is made of an epoxy molding compound (EMC), an AjinomotoTM Build-up Film (ABF), or an acrylic-based material. In some embodiments, the protective insulating layer 110 a is formed by a coating process, a molding process, or another suitable process.
- EMC epoxy molding compound
- ABSF AjinomotoTM Build-up Film
- acrylic-based material acrylic-based material.
- the protective insulating layer 110 a is formed by a coating process, a molding process, or another suitable process.
- the chip regions C are separated from each other by dicing the scribe line region S of the substrate 100 to form semiconductor dies with the RDL structures 106 thereon.
- the formed semiconductor die has a first surface 101 a (e.g., an active surface of the semiconductor die), a second surface 101 b (e.g., a non-active surface of the semiconductor die) opposite the first surface 101 a, and a third surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between the first surface 101 a and the second surface 101 b.
- the protective insulating layer 110 a has a sidewall 109 that is substantially aligned with the third surface 101 c of the semiconductor die.
- a carrier substrate 200 with an adhesive layer 202 formed thereon is provided.
- each of the formed semiconductor dies with an RDL structure 106 formed on the first surface 101 a of the semiconductor die is mounted onto the carrier substrate 200 by attaching the top surface of the protective insulating layer 110 a to the adhesive layer 202 using a pick-and-place process.
- the second surface 101 b of each semiconductor die is opposite the carrier substrate 200 .
- a protective insulating layer 110 is formed using a molding process to cover the second surface 101 b and the third surface 101 c of the semiconductor dies and surround the protective insulating layer 110 a, so that the protective insulating layer 110 extends from the third surface 101 c of each semiconductor die to the sidewall 109 of the respective protective insulating layer.
- each of the formed semiconductor dies with an RDL structure 106 thereon is encapsulated by a protective structure including the protective insulating layer 110 a and the protective insulating layer 110 .
- the protective structure protects the semiconductor dies from the environment, thereby preventing the semiconductor die in the subsequently formed semiconductor package structure from damage due to, for example, the stress, the chemicals and/or the moisture.
- the protective insulating layer 110 of the protective structure is formed by a molding process while the protective insulating layer 110 a of the protective structure is formed by a coating process.
- the semiconductor dies with RDL structures 106 encapsulated by the protective structure are de-bonded from the carrier substrate 200 by a de-bonding process as shown in FIG. 1C .
- the resulting structure is shown in FIG. 4C .
- a grinding process is performed on the protective insulating layer 110 a above the RDL structures 106 and a portion of the protective insulating layer 110 surrounding the protective insulating layer 110 a until the RDL structures 106 are exposed from the protective insulating layer 110 a, as shown in FIG. 4D .
- the protective insulating layer 110 a and the protective insulating layer 110 may be grinded by a CMP process or another suitable grinding process.
- the protective insulating layer 110 a and the RDL structures 106 are covered with a patterned passivation layer 112 , as shown in FIG. 4E .
- the passivation layer 112 is made of a material that is different from the material of the protective insulating layer 110 a and the material of the protective insulating layer 110 .
- the passivation layer 112 is also divided into several portions, so that each of the semiconductor dies is covered by a respective portion of passivation layer 112 . In some other embodiments, the passivation layer 112 is divided into several portions by the subsequent dicing process.
- conductive structures 120 including an optional UBM layer 122 and a solder bump 124 respectively pass through the passivation layer 112 via those openings, as shown in FIG. 4E .
- each of the conductive structures 120 is electrically coupled to the respective exposed RDL structure 106 .
- a singulation e.g., a dicing process
- saw through the formed structure shown in FIG. 4E a singulation (e.g., a dicing process) is carried out to saw through the formed structure shown in FIG. 4E .
- a singulation e.g., a dicing process
- FIG. 5A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- the semiconductor package structure 20 a includes a semiconductor die that includes a substrate 100 , at least one conductive pad 102 formed on the substrate 100 , and an insulating layer 104 formed over the substrate 100 and having an opening to expose the conductive pad 102 , as shown in FIG. 5A .
- the semiconductor die has a first surface 101 a (e.g., an active surface of the semiconductor die), a second surface 101 b (e.g., a non-active surface of the semiconductor die) opposite the first surface 101 a, and a third surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between the first surface 101 a and the second surface 101 b.
- a first surface 101 a e.g., an active surface of the semiconductor die
- a second surface 101 b e.g., a non-active surface of the semiconductor die
- a third surface 101 c e.g., a sidewall surface of the semiconductor die
- the semiconductor package structure 20 a further includes a protective insulating layer 110 a that covers the first surface 101 a of the semiconductor die, and a protective insulating layer 110 that covers the second surface 101 b and the third surface 101 c of the semiconductor die and that surrounds the protective insulating layer 110 a.
- the protective insulating layer 110 a has a sidewall 109 that is substantially aligned with the third surface 101 c of the semiconductor die.
- the protective insulating layer 110 extends from the third surface 101 c of the semiconductor die to the sidewall 109 of the protective insulating layer 110 a.
- the thickness of the protective insulating layer 110 a covering the first surface 101 a and the thickness of the protective insulating layer 110 covering the second surface 101 b and the third surface 101 c of the semiconductor die can be adjusted, so as to fine-tune the protection ability of the semiconductor package structure 20 a.
- the protective insulating layer 110 a and the protective insulating layer 110 are made of the same material or different materials.
- a material may include an epoxy molding compound (EMC), an AjinomotoTM Build-up Film (ABF), or an acrylic-based material.
- the semiconductor package structure 20 a further includes an RDL structure 106 electrically coupled to the semiconductor die via the conductive pad 102 and surrounded by the protective insulating layer 110 a.
- the semiconductor package structure 20 a further includes a passivation layer 112 covering the RDL structure 106 and a portion of the protective insulating layer 110 a surrounding the RDL structure 106 .
- the passivation layer 112 is made of for example, polyimide or polybenzoxazole (PBO).
- the semiconductor package structure 20 a further includes at least one conductive structure 120 that includes an optional UBM layer 122 and a solder bump 124 and passes through the passivation layer 112 , so as to be electrically coupled to the semiconductor die through the RDL structure 106 .
- the semiconductor package structure 20 a shown in FIG. 5A is a CSP structure.
- the CSP structure may include an SOC package.
- the semiconductor package structure 20 a may be mounted on a base (not shown).
- the base may include a printed circuit board (PCB) and may be formed of polypropylene (PP).
- the base may include a package substrate. Similar to the semiconductor package structure 10 a, the semiconductor package structure 20 a may be mounted on the base by a bonding process and electrically coupled to the base using the conductive structures 120 as connectors.
- FIG. 5B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 5A may be omitted for brevity.
- the semiconductor package structure 20 b is similar to the semiconductor package structure 20 a shown in FIG. 5A . Compared to the semiconductor package structure 20 a, the semiconductor package structure 20 b further includes a passivation layer 105 formed between the first surface 101 a of the semiconductor die and the RDL structure 106 and covered by the protective insulating layer 110 a.
- the material and the method used for the passivation layer 105 are the same as or similar to those used for the passivation layer 112 and different from those used for the protective insulating layer 110 a and those used for the protective insulating layer 110 .
- the semiconductor package structure 20 b is formed by a method that is similar to the method shown in FIGS. 4A to 4E , except that an additional passivation layer 105 is formed prior to the formation of the RDL structure 106 . Prior to the formation of the RDL structure 106 , at least one opening is formed in the passivation layer 105 , so that the passivation layer 105 exposes the conductive pad 102 and surrounds the opening formed in the insulating layer 104 .
- FIGS. 6A to 6E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments of the disclosure. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIGS. 1A to 1F or 4A to 4E may be omitted for brevity.
- FIG. 6A a structure as shown in FIG. 1A is provided. Afterwards, the chip regions C are separated from each other by dicing the scribe line region S of the substrate 100 to form semiconductor dies with the RDL structures 106 thereon.
- the formed semiconductor die has a first surface 101 a (e.g., an active surface of the semiconductor die), a second surface 101 b (e.g., a non-active surface of the semiconductor die) opposite the first surface 101 a, and a third surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between the first surface 101 a and the second surface 101 b.
- a first surface 101 a e.g., an active surface of the semiconductor die
- a second surface 101 b e.g., a non-active surface of the semiconductor die
- a third surface 101 c e.g., a sidewall surface of the semiconductor die
- a carrier substrate 200 with an adhesive layer 202 formed thereon is provided.
- each of the formed semiconductor dies with an RDL structure 106 formed on the first surface 101 a of the semiconductor die is mounted onto the carrier substrate 200 by attaching the top surface and sidewall surface of the RDL structure 106 to the adhesive layer 202 using a pick-and-place process.
- the second surface 101 b of each semiconductor die is opposite the carrier substrate 200 .
- a protective insulating layer 110 is formed using a molding process to cover the second surface 101 b and the third surface 101 c of the semiconductor dies and surround the protective insulating layer 110 a, so that the protective insulating layer 110 extends from the third surface 101 c of each semiconductor die to the sidewall 109 of the respective protective insulating layer.
- the semiconductor dies with RDL structures 106 are de-bonded from the carrier substrate 200 by a de-bonding process (as shown in FIG. 1C ).
- the resulting structure is shown in FIG. 6B .
- a protective insulating layer 110 a is formed by a coating process to cover the first surface 101 a of each semiconductor die and surround each RDL structure 106 , as shown in FIG. 6C .
- the top surfaces and sidewalls of the RDL structures 106 are covered or encapsulated by the protective insulating layer 110 a.
- a portion of the protective insulating layer 110 covering the third surface 101 c of the semiconductor die is capped by the protective insulating layer 110 a.
- the protective insulating layer 110 a is formed by a molding process or another suitable process.
- each of the formed semiconductor dies with an RDL structure 106 thereon is encapsulated.
- the protective structure protects the semiconductor dies from the environment, thereby preventing the semiconductor die in the subsequently formed semiconductor package structure from damage due to, for example, the stress, the chemicals and/or the moisture.
- a grinding process is performed on the protective insulating layer 110 a above the RDL structures 106 until the RDL structures 106 are exposed from the protective insulating layer 110 a, as shown in FIG. 6D .
- the protective insulating layer 110 a may be grinded by a CMP process or another suitable grinding process.
- the protective insulating layer 110 a and the RDL structures 106 are covered with a patterned passivation layer 112 , as shown in FIG. 6E .
- the passivation layer 112 is made of a material that is different from the material of the protective insulating layer 110 a and the material of the protective insulating layer 110 .
- the passivation layer 112 is also divided into several portions, so that each of the semiconductor dies is covered by a respective portion of passivation layer 112 . In some other embodiments, the passivation layer 112 is divided into several portions by the subsequent dicing process.
- conductive structures 120 including an optional UBM layer 122 and a solder bump 124 respectively pass through the passivation layer 112 via those openings, as shown in FIG. 6E .
- each of the conductive structures 120 is electrically coupled to the respective exposed RDL structure 106 .
- a singulation e.g., a dicing process
- the protective insulating layer 110 a has a sidewall and a portion of the protective insulating layer covering the third surface 101 c of the semiconductor die has a sidewall, and those sidewalls are substantially aligned with each other.
- FIG. 7A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments.
- the semiconductor package structure 30 a includes a semiconductor die that includes a substrate 100 , at least one conductive pad 102 formed on the substrate 100 , and an insulating layer 104 formed over the substrate 100 and having an opening to expose the conductive pad 102 , as shown in FIG. 7A .
- the semiconductor die has a first surface 101 a (e.g., an active surface of the semiconductor die), a second surface 101 b (e.g., a non-active surface of the semiconductor die) opposite the first surface 101 a, and a third surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between the first surface 101 a and the second surface 101 b.
- a first surface 101 a e.g., an active surface of the semiconductor die
- a second surface 101 b e.g., a non-active surface of the semiconductor die
- a third surface 101 c e.g., a sidewall surface of the semiconductor die
- the semiconductor package structure 30 a further includes a protective insulating layer 110 a that covers the first surface 101 a of the semiconductor die, and a protective insulating layer 110 that covers the second surface 101 b and the third surface 101 c of the semiconductor die and that surrounds the protective insulating layer 110 a.
- the protective insulating layer 110 a has a sidewall 109 and a portion of the protective insulating layer 110 a covering the third surface 101 c of the semiconductor die has a sidewall 113 .
- the sidewall 109 is substantially aligned with the sidewall 113 .
- the portion of the protective insulating layer 110 covering the third surface 101 c of the semiconductor die is capped by the protective insulating layer 110 a.
- the thickness of the protective insulating layer 110 a covering the first surface 101 a and the thickness of the protective insulating layer 110 covering the second surface 101 b and the third surface 101 c of the semiconductor die can be adjusted, so as to fine-tune the protection ability of the semiconductor package structure 30 a.
- the protective insulating layer 110 a and the protective insulating layer 110 are made of the same material or different materials.
- a material may include an epoxy molding compound (EMC), an AjinomotoTM Build-up Film (ABF), or an acrylic-based material.
- the semiconductor package structure 30 a further includes an RDL structure 106 electrically coupled to the semiconductor die via the conductive pad 102 and surrounded by the protective insulating layer 110 a.
- the semiconductor package structure 30 a further includes a passivation layer 112 covering the RDL structure 106 and a portion of the protective insulating layer 110 a surrounding the RDL structure 106 .
- the passivation layer 112 is made of for example, polyimide or polybenzoxazole (PBO).
- the semiconductor package structure 30 a further includes at least one conductive structure 120 that includes an optional UBM layer 122 and a solder bump 124 and passes through the passivation layer 112 , so as to be electrically coupled to the semiconductor die through the RDL structure 106 .
- the semiconductor package structure 30 a shown in FIG. 7A is a CSP structure.
- the CSP structure may include an SOC package.
- the semiconductor package structure 30 a may be mounted on a base (not shown).
- the base may include a printed circuit board (PCB) and may be formed of polypropylene (PP).
- the base may include a package substrate. Similar to the semiconductor package structure 10 a or 20 a, the semiconductor package structure 30 a may be mounted on the base by a bonding process and electrically coupled to the base using the conductive structures 120 as connectors.
- FIG. 7B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 7A may be omitted for brevity.
- the semiconductor package structure 30 b is similar to the semiconductor package structure 30 a shown in FIG. 7A . Compared to the semiconductor package structure 30 a, the semiconductor package structure 30 b further includes a passivation layer 105 formed between the first surface 101 a of the semiconductor die and the RDL structure 106 and covered by the protective insulating layer 110 a.
- the material and the method used for the passivation layer 105 are the same as or similar to those used for the passivation layer 112 and different from those used for the protective insulating layer 110 a and those used for the protective insulating layer 110 .
- the semiconductor package structure 30 b is formed by a method that is similar to the method shown in FIGS. 6A to 6E , except that an additional passivation layer 105 is formed prior to the formation of the RDL structure 106 . Prior to the formation of the RDL structure 106 , at least one opening is formed in the passivation layer 105 , so that the passivation layer 105 exposes the conductive pad 102 and surrounds the opening formed in the insulating layer 104 .
- FIG. 8A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 7A may be omitted for brevity.
- the semiconductor package structure 40 a is similar to the semiconductor package structure 30 a shown in FIG. 7A . Compared to the semiconductor package structure 30 a, the passivation layer 112 is formed on the RDL structure 106 and the protective insulating layer 110 without forming the protective insulating layer 110 a in the semiconductor package structure 40 a. In some embodiments, the semiconductor package structure 40 a is formed by a method that is similar to the method illustrated in FIG.
- the passivation layer 112 may be formed after the formation of the RDL structure 106 . As shown in FIG. 8A , the passivation layer 112 covers the sidewall of the RDL structure 106 .
- FIG. 8B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 8A may be omitted for brevity.
- the semiconductor package structure 40 b is similar to the semiconductor package structure 40 a shown in FIG. 8A . Compared to the semiconductor package structure 40 a, the semiconductor package structure 40 b further includes a passivation layer 105 formed between the first surface 101 a of the semiconductor die and the RDL structure 106 and covered by the passivation layer 112 .
- the material and the method used for the passivation layer 105 are the same as or similar to those used for the passivation layer 112 and different from those used for the protective insulating layer 110 . As shown in FIG. 8B , the passivation layer 112 covers the sidewall of the RDL structure 106 and the sidewall of the passivation layer 105 .
- the semiconductor package structure 40 b is formed by a method that is similar to the method illustrated in FIG. 8A , except that an additional passivation layer 105 is formed prior to the formation of the RDL structure 106 .
- an additional passivation layer 105 is formed prior to the formation of the RDL structure 106 .
- Prior to the formation of the RDL structure 106 at least one opening is formed in the passivation layer 105 , so that the passivation layer 105 exposes the conductive pad 102 and surrounds the opening formed in the insulating layer 104 .
- FIG. 9A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 8A may be omitted for brevity.
- the semiconductor package structure 50 a is similar to the semiconductor package structure 40 a shown in FIG. 8A .
- the protective insulating layer 110 further covers the RDL structure 106 and the passivation layer 112 in the semiconductor package structure 50 a.
- the semiconductor package structure 50 a is formed by a method that is similar to the method illustrated in FIG. 8A , except that the protective insulating layer 110 is formed before the formation of the conductive structure 120 and after the formation of the passivation layer 112 .
- the protective insulating layer 110 is formed to cover the second surface 101 b and the third surface 101 c of the semiconductor die, the RDL structure 106 , and the passivation layer 112 .
- the embodiments according to FIGS. 1A-8B may be referred to as recon first, and the embodiments according to FIG. 9A may be referred to as recon last.
- the conductive structure 120 is formed in the openings.
- the conductive structure 120 includes an optional UBM layer 122 and a solder bump 124 on the UBM layer 122 .
- the UBM layer 122 is not formed, and the conductive structure 120 includes a solder bump 124 on the passivation layer 112 .
- the protective insulating layer 110 may be formed after the formation of the UBM layer 122 and before the formation of the solder bump 124 .
- a grinding process is performed on the top surface of the protective insulating layer 110 until the UBM layer 122 is exposed from the protective insulating layer 110 .
- the top surface of the protective insulating layer 110 may be grinded by a chemical mechanical polishing (CMP) process or another suitable grinding process.
- CMP chemical mechanical polishing
- the edge of the passivation layer 112 is aligned with the third surface 101 c of the semiconductor die as shown in FIG. 9A , but the present disclosure is not limit thereto.
- the edge of the passivation layer 112 may be disposed inside the first surface 101 a of the semiconductor die in some other embodiments. In these embodiments, a portion of the first surface 101 a of the semiconductor die exposed by the passivation layer 112 is in contact with the protective insulating layer 110 .
- the RDL structure 106 is in contact with the passivation layer 112 as shown in FIG. 9A , but the present disclosure is not limit thereto.
- the passivation layer 112 may not be formed, and the RDL structure 106 may be in contact with the protective insulating layer 110 in some other embodiments.
- the protective insulating layer 110 is formed after the formation of the RDL structure 106 .
- a portion of the top surface of the RDL structure 106 may be in contact with the passivation layer 112
- another portion of the top surface of the RDL structure 106 may be in contact with the protective insulating layer 110 .
- the protective insulating layer 110 in addition to the second surface 101 b and the third surface 101 c of the semiconductor die, the protective insulating layer 110 further covers the RDL structure 106 and the passivation layer 112 can provide an better protection ability of the semiconductor package structure 50 a. Furthermore, the semiconductor die shift for the RDL structure alignment can be reduced or avoided. Therefore, reliability of the semiconductor package structure 50 b can be improved.
- FIG. 9B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 9A may be omitted for brevity.
- the semiconductor package structure 50 b is similar to the semiconductor package structure 50 a shown in FIG. 9A .
- the semiconductor package structure 50 b further includes a passivation layer 105 formed between the first surface 101 a of the semiconductor die and the RDL structure 106 and covered by the protective insulating layer 110 .
- the material and the method used for the passivation layer 105 are the same as or similar to those used for the passivation layer 112 and different from those used for the protective insulating layer 110 .
- the semiconductor package structure 50 b is formed by a method that is similar to the method described in FIG. 9A , except that an additional passivation layer 105 is formed prior to the formation of the RDL structure 106 .
- an additional passivation layer 105 is formed prior to the formation of the RDL structure 106 .
- Prior to the formation of the RDL structure 106 at least one opening is formed in the passivation layer 105 , so that the passivation layer 105 exposes the conductive pad 102 and surrounds the opening formed in the insulating layer 104 .
- FIGS. 10A to 10E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments of the disclosure. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIGS. 1A to 1F, 4A to 4E or 6A to 6E may be omitted for brevity.
- the following embodiment provides a semiconductor package structure with a fan-out structure.
- a substrate 100 is provided.
- the substrate 100 may be a silicon wafer.
- the substrate 100 may be a silicon substrate or another semiconductor substrate.
- the substrate 100 include integrated circuits (not shown) therein.
- an insulating layer 104 is formed on the substrate 100 .
- the insulating layer 104 may serve as an ILD layer, an IMD layer, a passivation layer or a combination thereof. To simplify the diagram, only a flat layer is depicted herein.
- the insulating layer 104 is made of an inorganic material, such as silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiON), a combination thereof, or another suitable insulating material.
- the insulating layer 104 includes one or more conductive pads 102 therein.
- the conductive pads 102 are adjacent to the upper surface of the substrate 100 .
- the conductive pad 102 may be formed of metal, such as copper, aluminum, or another suitable metal material.
- Two conductive pads 102 formed on the substrate 100 and exposed from the insulating layer 104 are depicted herein as an example, but the present disclosure is not limit thereto.
- one or more than two conductive pads 102 may be formed on the substrate 100 .
- a conductive layer (not shown), such as a metal layer, is formed on the insulating layer 104 and passing through the insulating layer 104 to electrically couple to the exposed conductive pads 102 .
- the conductive layer is patterned to form a RDL structure 106 , so that the RDL structure 106 is electrically coupled to the subsequent formed semiconductor die, as shown in FIG. 10A .
- the substrate 100 is diced to form semiconductor dies with the RDL structure 106 thereon, as shown in FIG. 10A .
- Each of the formed semiconductor dies may be a SOC integrated circuit die.
- the SOC integrated circuit die for example, may include a logic die including a CPU, a GPU, a DRAM controller, or any combination thereof.
- Each of the semiconductor dies includes a substrate 100 , one or more conductive pads 102 formed on the substrate 100 , and an insulating layer 104 formed over the substrate 100 and having an opening to expose the conductive pads 102 .
- the semiconductor die has a first surface 101 a (e.g., an active surface of the semiconductor die), a second surface 101 b (e.g., a non-active surface of the semiconductor die) opposite the first surface 101 a, and a third surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between the first surface 101 a and the second surface 101 b.
- a first surface 101 a e.g., an active surface of the semiconductor die
- a second surface 101 b e.g., a non-active surface of the semiconductor die
- a third surface 101 c e.g., a sidewall surface of the semiconductor die
- the second surface 101 b of each semiconductor die may be mounted onto a carrier substrate (not shown) via an adhesive layer (not shown) using a pick-and-place process.
- a protective insulating layer 110 is formed to cover the first surface 101 a and the third surface 101 c of the semiconductor dies and to surround the RDL structure 106 , so that each of the formed semiconductor dies with an RDL structure 106 thereon is encapsulated by the protective insulating layer 110 .
- the protective insulating layer 110 protects the semiconductor dies from the environment, thereby preventing the semiconductor die in the subsequently formed semiconductor package structure from damage due to, for example, the stress, the chemicals and/or the moisture.
- the protective insulating layer 110 is made of an epoxy molding compound (EMC), an AjinomotoTM Build-up Film (ABF), or an acrylic-based material. In some embodiments, the protective insulating layer 110 is made of an epoxy molding compound (EMC) and formed by a molding process. The exemplary formation of the protective insulating layer 110 is described above, and will not be repeated again.
- EMC epoxy molding compound
- ABSF AjinomotoTM Build-up Film
- acrylic-based material acrylic-based material.
- the protective insulating layer 110 is made of an epoxy molding compound (EMC) and formed by a molding process. The exemplary formation of the protective insulating layer 110 is described above, and will not be repeated again.
- the semiconductor die with the RDL structure 106 encapsulated by the protective insulating layer 110 is de-bonded from the carrier substrate.
- the exemplary method of de-bonding is described above, and will not be repeated again.
- the second surface 101 b of each semiconductor die is exposed from the protective insulating layer 110 .
- a grinding process is performed on the top surface of the protective insulating layer 110 until the RDL structure 106 is exposed from the protective insulating layer 110 , as shown in FIG. 10C .
- the top surface of the protective insulating layer 110 may be grinded by a CMP process or another suitable grinding process.
- the protective insulating layer 110 and the RDL structure 106 are covered with a passivation layer 112 , as shown in FIG. 10D .
- the passivation layer 112 is formed on the protective insulating layer 110 and the RDL structure 106 by a coating process or another suitable deposition process. Afterwards, the passivation layer 112 is patterned by lithography or a combination of lithograph and etching to form openings that expose the RDL structure 106 .
- the passivation layer 112 is made of a material that is different from the material of the protective insulating layer 110 .
- the passivation layer 112 is made of polyimide or polybenzoxazole (PBO).
- a RDL structure 114 passes through the passivation layer 112 via those openings formed in the passivation layer 112 , as shown in FIG. 10D .
- the formation and the material of the RDL structure 114 may include the formation and the material as described above with respect to the RDL structure 106 , and will not be repeated again.
- the RDL structure 114 fills into the openings formed in the passivation layer 112 , so that each of the RDL structure 114 is electrically coupled to the respective exposed RDL structure 106 under the opening in the passivation layer 112 .
- the RDL structure 114 extends from the RDL structure 106 to above the protective insulating layer 110 , according to some embodiments.
- the RDL structure 114 may extend from directly above the first surface 101 a of the semiconductor die to directly above the protective insulating layer 110 . Accordingly, the RDL structure 114 enables the fan-out connection.
- the protective insulating layer 110 , the passivation layer 112 , and the RDL structure 114 are covered with a patterned passivation layer 116 , as shown in FIG. 10D .
- the passivation layer 116 is made of a material that is different from the material of the protective insulating layer 110 .
- the formation and the material of the passivation layer 116 may include the formation and the material as described above with respect to the passivation layer 112 or the passivation layer 105 , and will not be repeated again.
- the passivation layer 116 is patterned by lithography or a combination of lithograph and etching to form openings that expose the RDL structure 114 .
- an UBM layer 122 passes through the passivation layer 116 via those openings formed in the passivation layer 116 , as shown in FIG. 10D .
- the UBM layer 122 fills into the openings formed in the passivation layer 116 , so that each of the conductive structures 120 is electrically coupled to the respective exposed RDL structure 114 under the opening in the passivation layer 116 .
- a solder bump 124 is formed on the UBM layer 122 , according to some embodiments.
- a conductive structure 120 includes the UBM layer 122 and the solder bump 124 .
- the conductive structure 120 includes a conductive bump structure such as a copper bump, a conductive pillar structure, a conductive wire structure, or a conductive paste structure.
- more than one conductive structures 120 are formed. As shown in FIG. 10E , the gap G 1 between the conductive structures 120 may be greater than the gap G 2 between the RDL structures 106 to achieve the fan-out structure.
- an optional protective insulating layer 130 is formed to cover the exposed second surface 101 b of the semiconductor dies, as shown in FIG. 10E .
- the protective insulating layer 130 is sometimes referred to as a DBF that is made of a thermoset material, such as an epoxy resin material.
- the protective insulating layer 130 is made of a material that is the same as the material of the protective insulating layer 110 .
- the protective insulating layer 130 is made of an epoxy molding compound (EMC), an AjinomotoTM Build-up Film (ABF), or an acrylic-based material.
- FIG. 10F is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 10E may be omitted for brevity.
- the semiconductor package structure 60 b is similar to the semiconductor package structure 60 a shown in FIG. 10E . Compared to the semiconductor package structure 60 a, there is no protective insulating layer 130 formed in the package structure 60 b, and hence the second surface 101 b of the semiconductor die is exposed to the environment.
- the semiconductor package structure 60 b is formed by a method that is similar to the method shown in FIGS. 10A to 10E , except that the formation of the protective insulating layer 130 , as shown in FIG. 10E , is omitted.
- FIG. 11A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 10E may be omitted for brevity.
- the semiconductor package structure 70 a is similar to the semiconductor package structure 60 a shown in FIG. 10E . Compared to the semiconductor package structure 60 a, there is no UBM layer 122 formed in the package structure 70 a, and hence the solder bump 124 is formed directly on the passivation layer 116 .
- the semiconductor package structure 70 a is formed by a method that is similar to the method shown in FIGS. 10A to 10E , except that the formation of the UBM layer 122 , as shown in FIG. 10E , is omitted.
- the solder bump 124 may pass through the passivation layer 116 via openings formed in the passivation layer 116 .
- the solder bump 124 fills into the openings formed in the passivation layer 116 , so that each of the conductive structures 120 is electrically coupled to the respective exposed RDL structure 114 under the opening in the passivation layer 116 .
- FIG. 11B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 11A may be omitted for brevity.
- the semiconductor package structure 70 b is similar to the semiconductor package structure 70 a shown in FIG. 11A . Compared to the semiconductor package structure 70 a, there is no protective insulating layer 130 formed in the package structure 70 b, and hence the second surface 101 b of the semiconductor die is exposed to the environment.
- FIG. 12A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 10E may be omitted for brevity.
- the semiconductor package structure 80 a is similar to the semiconductor package structure 60 a shown in FIG. 10E . Compared to the semiconductor package structure 60 a, there is no passivation layer 105 formed in the package structure 80 b, and hence the RDL structure 106 is formed directly on the insulating layer 104 .
- the semiconductor package structure 80 a is formed by a method that is similar to the method shown in FIGS. 10A to 10E , except that the formation of the passivation layer 105 , as shown in FIG. 10A , is omitted.
- FIG. 12B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 12A may be omitted for brevity.
- the semiconductor package structure 80 b is similar to the semiconductor package structure 80 a shown in FIG. 12A . Compared to the semiconductor package structure 80 a, there is no protective insulating layer 130 formed in the package structure 80 b, and hence the second surface 101 b of the semiconductor die is exposed to the environment.
- FIG. 13A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 10E may be omitted for brevity.
- the semiconductor package structure 90 a is similar to the semiconductor package structure 60 a shown in FIG. 10E . Compared to the semiconductor package structure 60 a, there is no passivation layer 105 and no UBM layer 122 formed in the package structure 90 a, and hence the RDL structure 106 is formed directly on the insulating layer 104 and the solder bump 124 is formed directly on the passivation layer 116 .
- the semiconductor package structure 80 a is formed by a method that is similar to the method shown in FIGS. 10A to 10E , except that the formation of the passivation layer 105 and the UBM layer 122 , is omitted.
- FIG. 13B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference to FIG. 13A may be omitted for brevity.
- the semiconductor package structure 90 b is similar to the semiconductor package structure 90 a shown in FIG. 13A . Compared to the semiconductor package structure 90 a, there is no protective insulating layer 130 formed in the package structure 90 b, and hence the second surface 101 b of the semiconductor die is exposed to the environment.
- the semiconductor package structure is designed to fabricate a protective structure in the semiconductor package structure to cover or encapsulate the semiconductor die in the semiconductor package structure.
- the protective structure includes one or more protective insulating layers to protect the semiconductor die from the environment, thereby preventing the semiconductor die in the semiconductor package structure from damage due to, for example, the stress, the chemicals and/or the moisture.
- the reliability of the semiconductor package structure can be maintained during the subsequent thermal process (such as a surface mount technology (SMT) process or a bonding process).
- the RDL structure formed on the semiconductor die is also protected by the protective structure, so as to keep its electrical and thermal performance.
- the semiconductor die in the semiconductor package structure can be prevented from chipping when the CSP structure is placed in a test socket for performing a test process.
- the protective insulating layer covers the RDL structure and the passivation layer, the second surface and the third surface of the semiconductor die can provide a better protection ability of the semiconductor package structure, according to some embodiments.
- the semiconductor die shift for the RDL structure alignment can be reduced or avoided. Therefore, reliability of the semiconductor package structure can be improved.
Abstract
Description
- This application is a Continuation-In-Part of application Ser. No. 16/430,076 filed on Jun. 3, 2019, which claims the benefit of U.S. Provisional Application No. 62/731,128 filed on Sep. 14, 2018, the entirety of which is incorporated by reference herein. This application also claims the benefit of U.S. Provisional Application No. 62/881,434 filed on Aug. 1, 2019, the entirety of which is incorporated by reference herein. This application also claims the benefit of U.S. Provisional Application No. 62/881,441 filed on Aug. 1, 2019, the entirety of which is incorporated by reference herein.
- The present invention relates to semiconductor package technology, and in particular to a wafer level chip scale package (WLCSP) structure.
- Integrated circuit (IC) devices are fabricated in a semiconductor wafer and divided into individual chips. Afterwards, those chips are assembled in package form to be used in electronic products. The package provides a structure to support the chip and protect the chip from the environment. The package also provides electrical connections to and from the chip.
- In recent years, as electronic products have become increasingly multifunctional and have been scaled down in size, there is a desire for manufacturers of semiconductor devices to make more devices formed on a single semiconductor wafer, so that the electronic products that include these devices can be made more compact. This results in many new challenges to the structural and electrical design of the package.
- Accordingly, a chip scale package (CSP) technology has been developed to satisfy the industry's demands (e.g., the smaller chip size and form factor). Moreover, a wafer level package (WLP) technology has also been introduced for the cost-effective fabrication of packages. Such a technology is referred to as wafer-level chip scale package (WLCSP).
- However, in the use of the WLCSP process, the surface of each chip in the respective package is exposed to the environment after the packages are separated from the package wafer. As a result, damage to the chip may occur, thereby reducing the reliability of the semiconductor packages. Thus, a novel semiconductor package structure and a fabrication method thereof are desirable.
- Semiconductor package structures are provided. An exemplary embodiment of a semiconductor package structure includes a semiconductor die, a redistribution layer (RDL) structure, a protective insulating layer, and a conductive structure. The semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. The RDL structure is on the first surface of the semiconductor die and is electrically coupled to the semiconductor die. The protective insulating layer covers the RDL structure, the second surface and the third surface of the semiconductor die. The conductive structure passes through the protective insulating layer and is electrically coupled to the RDL structure.
- Another exemplary embodiment of a semiconductor package structure includes a semiconductor die, a first protective insulating layer, a first redistribution layer (RDL) structure, a first passivation layer, and a plurality of conductive structures. The semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. The first protective insulating layer covers the first surface and the third surface of the semiconductor die. The first RDL structure is over the first surface of the semiconductor die and is electrically coupled to the semiconductor die and extends to directly above the first protective insulating layer. The first passivation layer covers the first protective insulating layer and the first RDL structure. The plurality of conductive structures passes through the first passivation layer and is electrically coupled to the first RDL structure.
- Yet another exemplary embodiment of a semiconductor package structure includes a semiconductor die, a first redistribution layer (RDL) structure, a first protective insulating layer, a first passivation layer, a second RDL structure, a second passivation layer, and a plurality of conductive structures. The semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. The first RDL structure is on the first surface of the semiconductor die and is electrically coupled to the semiconductor die. The first protective insulating layer covers the first surface and the third surface of the semiconductor die and surrounds the first RDL structure. The first passivation layer covers the first protective insulating layer and the first RDL structure. The second RDL structure is electrically coupled to the semiconductor die through the first RDL structure, wherein the second RDL structure extends from the first RDL structure to above the first protective insulating layer. The second passivation layer covers the second RDL structure. The plurality of conductive structures passes through the second passivation layer and is electrically coupled to the second RDL structure.
- A detailed description is given in the following embodiments with reference to the accompanying drawings.
- The present invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
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FIGS. 1A to 1F are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments. -
FIG. 2A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 2B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 3A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 3B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIGS. 4A to 4E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments. -
FIG. 5A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 5B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIGS. 6A to 6E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments. -
FIG. 7A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 7B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 8A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 8B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 9A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 9B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIGS. 10A to 10E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments. -
FIG. 10F is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 11A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 11B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 12A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 12B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 13A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. -
FIG. 13B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. - The following description is of the best-contemplated mode of carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is determined by reference to the appended claims.
- The present invention will be described with respect to particular embodiments and with reference to certain drawings, but the invention is not limited thereto and is only limited by the claims. The drawings described are only schematic and are non-limiting. In the drawings, the size of some of the elements may be exaggerated for illustrative purposes and not drawn to scale. The dimensions and the relative dimensions do not correspond to actual dimensions in the practice of the invention.
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FIGS. 1A to 1F are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments of the disclosure. As shown inFIG. 1A , asubstrate 100 is provided. In some embodiments, thesubstrate 100 may include a plurality of chip regions and a scribe line region that surrounds the plurality of chip regions and separates the adjacent chip regions from each other. To simplify the diagram, only two complete and adjacent chip regions C and a scribe line region S separating these chip regions C are depicted herein. Thesubstrate 100 may be a silicon wafer so as to facilitate the wafer-level packaging process. For example, thesubstrate 100 may be a silicon substrate or another semiconductor substrate. - In some embodiments, the chip regions C of the
substrate 100 include integrated circuits (not shown) therein. In some embodiments, an insulatinglayer 104 is formed on thesubstrate 100. The insulatinglayer 104 may serve as an inter-dielectric (ILD) layer, an inter-metal dielectric (IMD) layer, a passivation layer or a combination thereof. To simplify the diagram, only a flat layer is depicted herein. In some embodiments, the insulatinglayer 104 is made of an inorganic material, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), or a combination thereof, or another suitable insulating material. - Moreover, the insulating
layer 104 includes one or moreconductive pads 102 therein. Theconductive pads 102 correspond to the chip regions C of thesubstrate 100 and are adjacent to the upper surface of thesubstrate 100. Theconductive pad 102 may be formed of metal, such as copper, aluminum, or another suitable metal material. To simplify the diagram, only oneconductive pad 102 formed on thesubstrate 100 in each chip region C and exposed from the insulatinglayer 104 is depicted herein as an example. In some embodiments, the ICs in the chip region C is electrically connected to the correspondingconductive pad 102. The aforementioned structure define a number of semiconductor dies/chips after the chip regions C are separated from each other by dicing the scribe line region S of thesubstrate 100. - In some embodiments, a conductive layer (not shown), such as a metal layer, is formed on the insulating
layer 104 and passing through the insulatinglayer 104 to electrically couple to the exposedpads 102 in the chip regions C. Afterwards, the conductive layer is patterned to form a redistribution layer (RDL)structure 106 in each of the chip regions C, so that theRDL structure 106 is electrically coupled to the subsequent formed semiconductor die, as shown inFIG. 1A . - As shown in
FIG. 1B , in some embodiments, the chip regions C are separated from each other by dicing the scribe line region S of thesubstrate 100 to form semiconductor dies with theRDL structures 106 thereon. The formed semiconductor die may be a system on chip (SOC) integrated circuit die. The SOC integrated circuit die, for example, may include a logic die including a central processing unit (CPU), a graphics processing unit (GPU), a dynamic random access memory (DRAM) controller or any combination thereof. Each of semiconductor dies includes asubstrate 100, at least oneconductive pad 102 formed on thesubstrate 100, and an insulatinglayer 104 formed over thesubstrate 100 and having an opening to expose theconductive pad 102. Moreover, the semiconductor die has afirst surface 101 a (e.g., an active surface of the semiconductor die), asecond surface 101 b (e.g., a non-active surface of the semiconductor die) opposite thefirst surface 101 a, and athird surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between thefirst surface 101 a and thesecond surface 101 b. - As shown in
FIG. 1B , in some embodiments, acarrier substrate 200 with anadhesive layer 202 formed thereon is provided. Thecarrier substrate 200 may be made of silicon, glass, ceramic or the like, and may have a shape that is the same or similar to the semiconductor wafer, and therefore thecarrier substrate 200 is sometimes referred to as a carrier wafer. Theadhesive layer 202 may be made of a light-to-heat conversion (LTHC) material or another suitable material. Afterwards, in some embodiments, thesecond surface 101 b of each semiconductor die that has anRDL structure 106 formed on thefirst surface 101 a of the semiconductor die is mounted onto thecarrier substrate 200 via theadhesive layer 202 using a pick-and-place process. - Next, in some embodiments, a protective
insulating layer 110 is formed to cover thefirst surface 101 a and thethird surface 101 c of the semiconductor dies and to surround theRDL structures 106, so that each of the formed semiconductor dies with anRDL structure 106 thereon is encapsulated by the protective insulatinglayer 110. In some embodiments, the protective insulatinglayer 110 protects the semiconductor dies from the environment, thereby preventing the semiconductor die in the subsequently formed semiconductor package structure from damage due to, for example, the stress, the chemicals and/or the moisture. - In some embodiments, the protective insulating
layer 110 is made of an epoxy molding compound (EMC), an Ajinomoto™ Build-up Film (ABF), or an acrylic-based material. In some embodiments, the protective insulatinglayer 110 is made of an epoxy molding compound (EMC) and formed by a molding process. For example, the protective insulating layer 110 (such as in an epoxy or resin) may be applied while substantially liquid, and then may be cured through a chemical reaction. The protectiveinsulating layer 110 may be an ultraviolet (UV) or thermally cured polymer applied as a gel or malleable solid capable of being formed around the semiconductor dies, and then may be cured through a UV or thermal curing process. The protectiveinsulating layer 110 may be cured with a mold (not shown). - After the protective insulating
layer 110 is formed, the semiconductor dies withRDL structures 106 encapsulated by the protective insulatinglayer 110 are de-bonded from thecarrier substrate 200, as shown inFIG. 1C . In some embodiments, a de-bonding process is performed by exposing the adhesive layer 202 (shown inFIG. 1B ) using a laser or UV light when theadhesive layer 202 is made of an LTHC material. The LTHC material may be decomposed due to generated heat from the laser or UV light, and hence thecarrier substrate 200 is removed from the structure including the semiconductor dies, theRDL structures 106, and the protective insulatinglayer 110. As a result, thesecond surface 101 b of each semiconductor die is exposed from the protective insulatinglayer 110. The resulting structure is shown inFIG. 1C . - In some embodiments, after the
carrier substrate 200 is removed by the de-bonding process, a grinding process is performed on the top surface of the protective insulatinglayer 110 until theRDL structures 106 are exposed from the protective insulatinglayer 110, as shown inFIG. 1D . For example, the top surface of the protective insulatinglayer 110 may be grinded by a chemical mechanical polishing (CMP) process or another suitable grinding process. - Afterwards, the protective insulating
layer 110 and theRDL structures 106 are covered with apassivation layer 112, as shown inFIG. 1E . In some embodiments, thepassivation layer 112 is formed on the protective insulatinglayer 110 and theRDL structures 106 by a coating process or another suitable deposition process. Afterwards, thepassivation layer 112 is patterned by lithography or a combination of lithograph and etching to form openings that expose theRDL structures 106. In some embodiments, thepassivation layer 112 is made of a material that is different from the material of the protective insulatinglayer 110. In some embodiments, thepassivation layer 112 is made of polyimide or polybenzoxazole (PBO). - In some embodiments, during patterning the
passivation layer 112, thepassivation layer 112 is also divided into several portions, so that each of the semiconductor dies is covered by a respective portion ofpassivation layer 112. In some other embodiments, thepassivation layer 112 is divided into several portions by the subsequent dicing process. - After openings are formed in the
passivation layer 112,conductive structures 120 respectively pass through thepassivation layer 112 via those openings formed in thepassivation layer 112, as shown inFIG. 1E . In some embodiments, theconductive structures 120 fill into the openings formed in thepassivation layer 112, so that each of theconductive structures 120 is electrically coupled to the respective exposedRDL structure 106 under the opening in thepassivation layer 112. - In some embodiments, the
conductive structure 120 includes an optional under-bump metallurgy (UBM)layer 122 and asolder bump 124 on theUBM layer 122. In some other embodiments, theconductive structure 120 includes a conductive bump structure such as a copper bump, a conductive pillar structure, a conductive wire structure, or a conductive paste structure. - After the
conductive structures 120 are formed, an optional protectiveinsulating layer 130 is formed to cover the exposedsecond surfaces 101 b of the semiconductor dies, as shown inFIG. 1F . The protectiveinsulating layer 130 is sometimes referred to as a die backside film (DBF) that is made of a thermoset material, such as an epoxy resin material. In some other embodiments, the protective insulatinglayer 130 is made of a material that is the same as the material of the protective insulatinglayer 110. For example, the protective insulatinglayer 130 is made of an epoxy molding compound (EMC), an Ajinomoto™ Build-up Film (ABF), or an acrylic-based material. - In some embodiments, after the protective insulating
layer 130 is formed, a singulation is carried out to saw through the formed structure shown inFIG. 1F . For example, a dicing process may be performed on the formed structure shown inFIG. 1F . As a result, multiple separate semiconductor package structures are formed. -
FIG. 2A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. InFIG. 2A , one of thesemiconductor package structures 10 a that is formed by dicing the formed structure shown inFIG. 1F is shown. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIGS. 1A to 1F may be omitted for brevity. In some embodiments, thesemiconductor package structure 10 a includes a semiconductor die that includes asubstrate 100, at least oneconductive pad 102 formed on thesubstrate 100, and an insulatinglayer 104 formed over thesubstrate 100 and having an opening to expose theconductive pad 102, as shown inFIG. 2A . The semiconductor die has afirst surface 101 a (e.g., an active surface of the semiconductor die), asecond surface 101 b (e.g., a non-active surface of the semiconductor die) opposite thefirst surface 101 a, and athird surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between thefirst surface 101 a and thesecond surface 101 b. - In some embodiments, the
semiconductor package structure 10 a further includes a protectiveinsulating layer 110 that covers thefirst surface 101 a and thethird surface 101 c of the semiconductor die, and a protectiveinsulating layer 130 that covers thesecond surface 101 b of the semiconductor die. The thickness of the portion of the protective insulatinglayer 110 covering thefirst surface 101 a and the thickness of the of the portion of the protective insulatinglayer 110 covering thethird surface 101 c of the semiconductor die can be adjusted, so as to fine-tune the protection ability of thesemiconductor package structure 10 a. - In some embodiments, the protective insulating
layer 110 and the protective insulatinglayer 130 are made of the same material or different materials. For example, such a material may include an epoxy molding compound (EMC), an Ajinomoto™ Build-up Film (ABF), or an acrylic-based material. Alternatively, the protective insulatinglayer 110 is made of an epoxy molding compound (EMC), an Ajinomoto™ Build-up Film (ABF), or an acrylic-based material, and the protective insulatinglayer 130 is made of a DBF material that includes a thermoset material, such as an epoxy resin material. - In some embodiments, the
semiconductor package structure 10 a further includes anRDL structure 106 electrically coupled to the semiconductor die via theconductive pad 102 and surrounded by the protective insulatinglayer 110 on thefirst surface 101 a of the semiconductor die. - In some embodiments, the
semiconductor package structure 10 a further includes apassivation layer 112 covering theRDL structure 106 and a portion of the protective insulatinglayer 110 surrounding theRDL structure 106. Thepassivation layer 112 may be made of polyimide or polybenzoxazole (PBO). - In some embodiments, the
semiconductor package structure 10 a further includes at least oneconductive structure 120 that includes anoptional UBM layer 122 and asolder bump 124 and passes through thepassivation layer 112, so as to be electrically coupled to the semiconductor die through theRDL structure 106. - In some embodiments, the
semiconductor package structure 10 a shown inFIG. 2A is a CSP structure. The CSP structure may include an SOC package. Moreover, thesemiconductor package structure 10 a may be mounted on a base (not shown). The base may include a printed circuit board (PCB) and may be formed of polypropylene (PP). Alternatively, the base may include a package substrate. Thesemiconductor package structure 10 a may be mounted on the base by a bonding process. For example, thesemiconductor package structure 10 a may be mounted on the base by the bonding process and electrically coupled to the base using theconductive structures 120 as connectors. -
FIG. 2B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 2A may be omitted for brevity. In some embodiments, thesemiconductor package structure 10 b is similar to thesemiconductor package structure 10 a shown inFIG. 2A . Compared to thesemiconductor package structure 10 a, there is no protective insulatinglayer 130 formed in thepackage structure 10 b, and hence thesecond surface 101 b of the semiconductor die is exposed to the environment. In some embodiments, thesemiconductor package structure 10 b is formed by a method that is similar to the method shown inFIGS. 1A to 1F , except that the formation of the protective insulatinglayer 130, as shown inFIG. 1F , is omitted. Namely, after the structure shown inFIG. 1E is formed, a singulation is carried out to saw through the formed structure shown inFIG. 1E . -
FIG. 3A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 2A may be omitted for brevity. In some embodiments, thesemiconductor package structure 10 c is similar to thesemiconductor package structure 10 a shown inFIG. 2A . Compared to thesemiconductor package structure 10 a, thesemiconductor package structure 10 c further includes apassivation layer 105 formed between thefirst surface 101 a of the semiconductor die and theRDL structure 106 and covered by the protective insulatinglayer 110. In some embodiments, the material and the method used for thepassivation layer 105 are the same as or similar to those used for thepassivation layer 112. For example, thepassivation layer 105 is made of polyimide or polybenzoxazole (PBO). In some embodiments, thesemiconductor package structure 10 c is formed by a method that is similar to the method shown inFIGS. 1A to 1F , except that anadditional passivation layer 105 is formed prior to the formation of theRDL structure 106. Prior to the formation of theRDL structure 106, at least one opening is formed in thepassivation layer 105, so that thepassivation layer 105 exposes theconductive pad 102 and surrounds the opening formed in the insulatinglayer 104. -
FIG. 3B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIGS. 2A and 3A may be omitted for brevity. In some embodiments, thesemiconductor package structure 10 d is similar to thesemiconductor package structure 10 c shown inFIG. 3A . Compared to thesemiconductor package structure 10 c, there is no protective insulatinglayer 130 formed in thepackage structure 10 d, and hence thesecond surface 101 b of the semiconductor die is exposed to the environment. In some embodiments, thesemiconductor package structure 10 d is formed by a method that is similar to the method used for forming thesemiconductor package structure 10 c, except that the formation of the protective insulatinglayer 130 is omitted. -
FIGS. 4A to 4E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments of the disclosure. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIGS. 1A to 1F may be omitted for brevity. As shown inFIG. 4A , a structure as shown inFIG. 1A is provided. Afterwards, a protectiveinsulating layer 110 a is formed to cover thefirst surface 101 a of each semiconductor die and surround eachRDL structure 106, so that the top surfaces and sidewalls of theRDL structures 106 are covered or encapsulated by the protective insulatinglayer 110 a. In some embodiments, the protective insulatinglayer 110 a is made of an epoxy molding compound (EMC), an Ajinomoto™ Build-up Film (ABF), or an acrylic-based material. In some embodiments, the protective insulatinglayer 110 a is formed by a coating process, a molding process, or another suitable process. - As shown in
FIG. 4B , in some embodiments, after the protective insulatinglayer 110 a is formed, the chip regions C are separated from each other by dicing the scribe line region S of thesubstrate 100 to form semiconductor dies with theRDL structures 106 thereon. The formed semiconductor die has afirst surface 101 a (e.g., an active surface of the semiconductor die), asecond surface 101 b (e.g., a non-active surface of the semiconductor die) opposite thefirst surface 101 a, and athird surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between thefirst surface 101 a and thesecond surface 101 b. Moreover, the protective insulatinglayer 110 a has asidewall 109 that is substantially aligned with thethird surface 101 c of the semiconductor die. - Still referring to
FIG. 4B , in some embodiments, acarrier substrate 200 with anadhesive layer 202 formed thereon is provided. Afterwards, in some embodiments, each of the formed semiconductor dies with anRDL structure 106 formed on thefirst surface 101a of the semiconductor die is mounted onto thecarrier substrate 200 by attaching the top surface of the protective insulatinglayer 110 a to theadhesive layer 202 using a pick-and-place process. As a result, thesecond surface 101 b of each semiconductor die is opposite thecarrier substrate 200. - Next, in some embodiments, a protective
insulating layer 110 is formed using a molding process to cover thesecond surface 101 b and thethird surface 101 c of the semiconductor dies and surround the protective insulatinglayer 110 a, so that the protective insulatinglayer 110 extends from thethird surface 101 c of each semiconductor die to thesidewall 109 of the respective protective insulating layer. As a result, each of the formed semiconductor dies with anRDL structure 106 thereon is encapsulated by a protective structure including the protective insulatinglayer 110 a and the protective insulatinglayer 110. - In some embodiments, the protective structure protects the semiconductor dies from the environment, thereby preventing the semiconductor die in the subsequently formed semiconductor package structure from damage due to, for example, the stress, the chemicals and/or the moisture. In some embodiments, the protective insulating
layer 110 of the protective structure is formed by a molding process while the protective insulatinglayer 110 a of the protective structure is formed by a coating process. - After the protective structure is formed, the semiconductor dies with
RDL structures 106 encapsulated by the protective structure are de-bonded from thecarrier substrate 200 by a de-bonding process as shown inFIG. 1C . The resulting structure is shown inFIG. 4C . - In some embodiments, after the
carrier substrate 200 is removed by the de-bonding process, a grinding process is performed on the protective insulatinglayer 110 a above theRDL structures 106 and a portion of the protective insulatinglayer 110 surrounding the protective insulatinglayer 110 a until theRDL structures 106 are exposed from the protective insulatinglayer 110 a, as shown inFIG. 4D . For example, the protective insulatinglayer 110 a and the protective insulatinglayer 110 may be grinded by a CMP process or another suitable grinding process. - Afterwards, the protective insulating
layer 110 a and theRDL structures 106 are covered with a patternedpassivation layer 112, as shown inFIG. 4E . In some embodiments, thepassivation layer 112 is made of a material that is different from the material of the protective insulatinglayer 110 a and the material of the protective insulatinglayer 110. In some embodiments, during patterning thepassivation layer 112, thepassivation layer 112 is also divided into several portions, so that each of the semiconductor dies is covered by a respective portion ofpassivation layer 112. In some other embodiments, thepassivation layer 112 is divided into several portions by the subsequent dicing process. - After openings are formed in the
passivation layer 112,conductive structures 120 including anoptional UBM layer 122 and asolder bump 124 respectively pass through thepassivation layer 112 via those openings, as shown inFIG. 4E . As a result, each of theconductive structures 120 is electrically coupled to the respective exposedRDL structure 106. - In some embodiments, after the
conductive structures 120 is formed, a singulation (e.g., a dicing process) is carried out to saw through the formed structure shown inFIG. 4E . As a result, multiple separate semiconductor package structures are formed. -
FIG. 5A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. InFIG. 5A , one of thesemiconductor package structures 20 a that is formed by dicing the formed structure shown inFIG. 4E is shown. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIGS. 4A to 4E may be omitted for brevity. In some embodiments, thesemiconductor package structure 20 a includes a semiconductor die that includes asubstrate 100, at least oneconductive pad 102 formed on thesubstrate 100, and an insulatinglayer 104 formed over thesubstrate 100 and having an opening to expose theconductive pad 102, as shown inFIG. 5A . The semiconductor die has afirst surface 101 a (e.g., an active surface of the semiconductor die), asecond surface 101 b (e.g., a non-active surface of the semiconductor die) opposite thefirst surface 101 a, and athird surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between thefirst surface 101 a and thesecond surface 101 b. - In some embodiments, the
semiconductor package structure 20 a further includes a protectiveinsulating layer 110 a that covers thefirst surface 101 a of the semiconductor die, and a protectiveinsulating layer 110 that covers thesecond surface 101 b and thethird surface 101 c of the semiconductor die and that surrounds the protective insulatinglayer 110 a. The protectiveinsulating layer 110 a has asidewall 109 that is substantially aligned with thethird surface 101 c of the semiconductor die. The protectiveinsulating layer 110 extends from thethird surface 101 c of the semiconductor die to thesidewall 109 of the protective insulatinglayer 110 a. The thickness of the protective insulatinglayer 110 a covering thefirst surface 101 a and the thickness of the protective insulatinglayer 110 covering thesecond surface 101 b and thethird surface 101 c of the semiconductor die can be adjusted, so as to fine-tune the protection ability of thesemiconductor package structure 20 a. - In some embodiments, the protective insulating
layer 110 a and the protective insulatinglayer 110 are made of the same material or different materials. For example, such a material may include an epoxy molding compound (EMC), an Ajinomoto™ Build-up Film (ABF), or an acrylic-based material. - In some embodiments, the
semiconductor package structure 20 a further includes anRDL structure 106 electrically coupled to the semiconductor die via theconductive pad 102 and surrounded by the protective insulatinglayer 110 a. - In some embodiments, the
semiconductor package structure 20 a further includes apassivation layer 112 covering theRDL structure 106 and a portion of the protective insulatinglayer 110 a surrounding theRDL structure 106. Moreover, thepassivation layer 112 is made of for example, polyimide or polybenzoxazole (PBO). - In some embodiments, the
semiconductor package structure 20 a further includes at least oneconductive structure 120 that includes anoptional UBM layer 122 and asolder bump 124 and passes through thepassivation layer 112, so as to be electrically coupled to the semiconductor die through theRDL structure 106. - In some embodiments, the
semiconductor package structure 20 a shown inFIG. 5A is a CSP structure. The CSP structure may include an SOC package. Moreover, thesemiconductor package structure 20 a may be mounted on a base (not shown). The base may include a printed circuit board (PCB) and may be formed of polypropylene (PP). Alternatively, the base may include a package substrate. Similar to thesemiconductor package structure 10 a, thesemiconductor package structure 20 a may be mounted on the base by a bonding process and electrically coupled to the base using theconductive structures 120 as connectors. -
FIG. 5B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 5A may be omitted for brevity. In some embodiments, thesemiconductor package structure 20 b is similar to thesemiconductor package structure 20 a shown inFIG. 5A . Compared to thesemiconductor package structure 20 a, thesemiconductor package structure 20 b further includes apassivation layer 105 formed between thefirst surface 101 a of the semiconductor die and theRDL structure 106 and covered by the protective insulatinglayer 110 a. In some embodiments, the material and the method used for thepassivation layer 105 are the same as or similar to those used for thepassivation layer 112 and different from those used for the protective insulatinglayer 110 a and those used for the protective insulatinglayer 110. In some embodiments, thesemiconductor package structure 20 b is formed by a method that is similar to the method shown inFIGS. 4A to 4E , except that anadditional passivation layer 105 is formed prior to the formation of theRDL structure 106. Prior to the formation of theRDL structure 106, at least one opening is formed in thepassivation layer 105, so that thepassivation layer 105 exposes theconductive pad 102 and surrounds the opening formed in the insulatinglayer 104. -
FIGS. 6A to 6E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments of the disclosure. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIGS. 1A to 1F or 4A to 4E may be omitted for brevity. As shown inFIG. 6A , a structure as shown inFIG. 1A is provided. Afterwards, the chip regions C are separated from each other by dicing the scribe line region S of thesubstrate 100 to form semiconductor dies with theRDL structures 106 thereon. The formed semiconductor die has afirst surface 101 a (e.g., an active surface of the semiconductor die), asecond surface 101 b (e.g., a non-active surface of the semiconductor die) opposite thefirst surface 101 a, and athird surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between thefirst surface 101 a and thesecond surface 101 b. - As shown in
FIG. 6A , in some embodiments, acarrier substrate 200 with anadhesive layer 202 formed thereon is provided. Afterwards, in some embodiments, each of the formed semiconductor dies with anRDL structure 106 formed on thefirst surface 101 a of the semiconductor die is mounted onto thecarrier substrate 200 by attaching the top surface and sidewall surface of theRDL structure 106 to theadhesive layer 202 using a pick-and-place process. As a result, thesecond surface 101 b of each semiconductor die is opposite thecarrier substrate 200. - Next, in some embodiments, a protective
insulating layer 110 is formed using a molding process to cover thesecond surface 101 b and thethird surface 101 c of the semiconductor dies and surround the protective insulatinglayer 110 a, so that the protective insulatinglayer 110 extends from thethird surface 101 c of each semiconductor die to thesidewall 109 of the respective protective insulating layer. - In some embodiments, after the protective insulating
layer 110 is formed, the semiconductor dies withRDL structures 106 are de-bonded from thecarrier substrate 200 by a de-bonding process (as shown inFIG. 1C ). The resulting structure is shown inFIG. 6B . - In some embodiments, after the de-bonding process, a protective
insulating layer 110 a is formed by a coating process to cover thefirst surface 101 a of each semiconductor die and surround eachRDL structure 106, as shown inFIG. 6C . As a result, the top surfaces and sidewalls of theRDL structures 106 are covered or encapsulated by the protective insulatinglayer 110 a. Moreover, a portion of the protective insulatinglayer 110 covering thethird surface 101 c of the semiconductor die is capped by the protective insulatinglayer 110 a. In some other embodiments, the protective insulatinglayer 110 a is formed by a molding process or another suitable process. - Due to the formation of a protective structure including the protective insulating
layer 110 a and the protective insulatinglayer 110, each of the formed semiconductor dies with anRDL structure 106 thereon is encapsulated. The protective structure protects the semiconductor dies from the environment, thereby preventing the semiconductor die in the subsequently formed semiconductor package structure from damage due to, for example, the stress, the chemicals and/or the moisture. - In some embodiments, after the protective structure is formed, a grinding process is performed on the protective insulating
layer 110 a above theRDL structures 106 until theRDL structures 106 are exposed from the protective insulatinglayer 110 a, as shown inFIG. 6D . For example, the protective insulatinglayer 110 a may be grinded by a CMP process or another suitable grinding process. - Afterwards, the protective insulating
layer 110 a and theRDL structures 106 are covered with a patternedpassivation layer 112, as shown inFIG. 6E . In some embodiments, thepassivation layer 112 is made of a material that is different from the material of the protective insulatinglayer 110 a and the material of the protective insulatinglayer 110. In some embodiments, during patterning thepassivation layer 112, thepassivation layer 112 is also divided into several portions, so that each of the semiconductor dies is covered by a respective portion ofpassivation layer 112. In some other embodiments, thepassivation layer 112 is divided into several portions by the subsequent dicing process. - After openings are formed in the
passivation layer 112,conductive structures 120 including anoptional UBM layer 122 and asolder bump 124 respectively pass through thepassivation layer 112 via those openings, as shown inFIG. 6E . As a result, each of theconductive structures 120 is electrically coupled to the respective exposedRDL structure 106. - In some embodiments, after the
conductive structures 120 is formed, a singulation (e.g., a dicing process) is carried out to saw through the formed structure shown inFIG. 6E . As a result, multiple separate semiconductor package structures are formed. In some embodiments, in the semiconductor package structure, the protective insulatinglayer 110 a has a sidewall and a portion of the protective insulating layer covering thethird surface 101 c of the semiconductor die has a sidewall, and those sidewalls are substantially aligned with each other. -
FIG. 7A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. InFIG. 7A , one of thesemiconductor package structures 30 a that is formed by dicing the formed structure shown inFIG. 6E is shown. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIGS. 1A to 1F or 4A to 4E may be omitted for brevity. In some embodiments, thesemiconductor package structure 30 a includes a semiconductor die that includes asubstrate 100, at least oneconductive pad 102 formed on thesubstrate 100, and an insulatinglayer 104 formed over thesubstrate 100 and having an opening to expose theconductive pad 102, as shown inFIG. 7A . The semiconductor die has afirst surface 101 a (e.g., an active surface of the semiconductor die), asecond surface 101 b (e.g., a non-active surface of the semiconductor die) opposite thefirst surface 101 a, and athird surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between thefirst surface 101 a and thesecond surface 101 b. - In some embodiments, the
semiconductor package structure 30 a further includes a protectiveinsulating layer 110 a that covers thefirst surface 101 a of the semiconductor die, and a protectiveinsulating layer 110 that covers thesecond surface 101 b and thethird surface 101 c of the semiconductor die and that surrounds the protective insulatinglayer 110 a. The protectiveinsulating layer 110 a has asidewall 109 and a portion of the protective insulatinglayer 110 a covering thethird surface 101 c of the semiconductor die has asidewall 113. In some embodiments, thesidewall 109 is substantially aligned with thesidewall 113. Moreover, the portion of the protective insulatinglayer 110 covering thethird surface 101 c of the semiconductor die is capped by the protective insulatinglayer 110 a. The thickness of the protective insulatinglayer 110 a covering thefirst surface 101 a and the thickness of the protective insulatinglayer 110 covering thesecond surface 101 b and thethird surface 101 c of the semiconductor die can be adjusted, so as to fine-tune the protection ability of thesemiconductor package structure 30 a. - In some embodiments, the protective insulating
layer 110 a and the protective insulatinglayer 110 are made of the same material or different materials. For example, such a material may include an epoxy molding compound (EMC), an Ajinomoto™ Build-up Film (ABF), or an acrylic-based material. - In some embodiments, the
semiconductor package structure 30 a further includes anRDL structure 106 electrically coupled to the semiconductor die via theconductive pad 102 and surrounded by the protective insulatinglayer 110 a. - In some embodiments, the
semiconductor package structure 30 a further includes apassivation layer 112 covering theRDL structure 106 and a portion of the protective insulatinglayer 110 a surrounding theRDL structure 106. Moreover, thepassivation layer 112 is made of for example, polyimide or polybenzoxazole (PBO). - In some embodiments, the
semiconductor package structure 30 a further includes at least oneconductive structure 120 that includes anoptional UBM layer 122 and asolder bump 124 and passes through thepassivation layer 112, so as to be electrically coupled to the semiconductor die through theRDL structure 106. - In some embodiments, the
semiconductor package structure 30 a shown inFIG. 7A is a CSP structure. The CSP structure may include an SOC package. Moreover, thesemiconductor package structure 30 a may be mounted on a base (not shown). The base may include a printed circuit board (PCB) and may be formed of polypropylene (PP). Alternatively, the base may include a package substrate. Similar to thesemiconductor package structure semiconductor package structure 30 a may be mounted on the base by a bonding process and electrically coupled to the base using theconductive structures 120 as connectors. -
FIG. 7B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 7A may be omitted for brevity. In some embodiments, thesemiconductor package structure 30 b is similar to thesemiconductor package structure 30 a shown inFIG. 7A . Compared to thesemiconductor package structure 30 a, thesemiconductor package structure 30 b further includes apassivation layer 105 formed between thefirst surface 101 a of the semiconductor die and theRDL structure 106 and covered by the protective insulatinglayer 110 a. In some embodiments, the material and the method used for thepassivation layer 105 are the same as or similar to those used for thepassivation layer 112 and different from those used for the protective insulatinglayer 110 a and those used for the protective insulatinglayer 110. In some embodiments, thesemiconductor package structure 30 b is formed by a method that is similar to the method shown inFIGS. 6A to 6E , except that anadditional passivation layer 105 is formed prior to the formation of theRDL structure 106. Prior to the formation of theRDL structure 106, at least one opening is formed in thepassivation layer 105, so that thepassivation layer 105 exposes theconductive pad 102 and surrounds the opening formed in the insulatinglayer 104. -
FIG. 8A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 7A may be omitted for brevity. In some embodiments, thesemiconductor package structure 40 a is similar to thesemiconductor package structure 30 a shown inFIG. 7A . Compared to thesemiconductor package structure 30 a, thepassivation layer 112 is formed on theRDL structure 106 and the protective insulatinglayer 110 without forming the protective insulatinglayer 110 a in thesemiconductor package structure 40 a. In some embodiments, thesemiconductor package structure 40 a is formed by a method that is similar to the method illustrated inFIG. 7A , except that the protective insulatinglayer 110 a is not formed. Thepassivation layer 112 may be formed after the formation of theRDL structure 106. As shown inFIG. 8A , thepassivation layer 112 covers the sidewall of theRDL structure 106. -
FIG. 8B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 8A may be omitted for brevity. In some embodiments, thesemiconductor package structure 40 b is similar to thesemiconductor package structure 40 a shown inFIG. 8A . Compared to thesemiconductor package structure 40 a, thesemiconductor package structure 40 b further includes apassivation layer 105 formed between thefirst surface 101 a of the semiconductor die and theRDL structure 106 and covered by thepassivation layer 112. In some embodiments, the material and the method used for thepassivation layer 105 are the same as or similar to those used for thepassivation layer 112 and different from those used for the protective insulatinglayer 110. As shown inFIG. 8B , thepassivation layer 112 covers the sidewall of theRDL structure 106 and the sidewall of thepassivation layer 105. - In some embodiments, the
semiconductor package structure 40 b is formed by a method that is similar to the method illustrated inFIG. 8A , except that anadditional passivation layer 105 is formed prior to the formation of theRDL structure 106. Prior to the formation of theRDL structure 106, at least one opening is formed in thepassivation layer 105, so that thepassivation layer 105 exposes theconductive pad 102 and surrounds the opening formed in the insulatinglayer 104. -
FIG. 9A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 8A may be omitted for brevity. In some embodiments, thesemiconductor package structure 50 a is similar to thesemiconductor package structure 40 a shown inFIG. 8A . Compared to thesemiconductor package structure 40 a, the protective insulatinglayer 110 further covers theRDL structure 106 and thepassivation layer 112 in thesemiconductor package structure 50 a. - In some embodiments, the
semiconductor package structure 50 a is formed by a method that is similar to the method illustrated inFIG. 8A , except that the protective insulatinglayer 110 is formed before the formation of theconductive structure 120 and after the formation of thepassivation layer 112. In some embodiments, after the formation of thepassivation layer 112, the protective insulatinglayer 110 is formed to cover thesecond surface 101 b and thethird surface 101 c of the semiconductor die, theRDL structure 106, and thepassivation layer 112. In other words, the embodiments according toFIGS. 1A-8B may be referred to as recon first, and the embodiments according toFIG. 9A may be referred to as recon last. - Next, at least one opening may be formed in the protective insulating
layer 110 and passing through thepassivation layer 112, so that thepassivation layer 112 and the protective insulatinglayer 110 expose theRDL structure 106. Next, theconductive structure 120 is formed in the openings. In some embodiments, theconductive structure 120 includes anoptional UBM layer 122 and asolder bump 124 on theUBM layer 122. In some other embodiments, theUBM layer 122 is not formed, and theconductive structure 120 includes asolder bump 124 on thepassivation layer 112. - Various steps may be added, removed, rearranged and repeated. For example, in the embodiment where the
conductive structure 120 including theUBM layer 122 and thesolder bump 124, the protective insulatinglayer 110 may be formed after the formation of theUBM layer 122 and before the formation of thesolder bump 124. In these embodiments, after the protective insulatinglayer 110 is formed, a grinding process is performed on the top surface of the protective insulatinglayer 110 until theUBM layer 122 is exposed from the protective insulatinglayer 110. For example, the top surface of the protective insulatinglayer 110 may be grinded by a chemical mechanical polishing (CMP) process or another suitable grinding process. Next, thesolder bump 124 is formed on the exposedUBM layer 122. - In some embodiments, the edge of the
passivation layer 112 is aligned with thethird surface 101 c of the semiconductor die as shown inFIG. 9A , but the present disclosure is not limit thereto. For example, the edge of thepassivation layer 112 may be disposed inside thefirst surface 101 a of the semiconductor die in some other embodiments. In these embodiments, a portion of thefirst surface 101 a of the semiconductor die exposed by thepassivation layer 112 is in contact with the protective insulatinglayer 110. - In some embodiments, the
RDL structure 106 is in contact with thepassivation layer 112 as shown inFIG. 9A , but the present disclosure is not limit thereto. For example, thepassivation layer 112 may not be formed, and theRDL structure 106 may be in contact with the protective insulatinglayer 110 in some other embodiments. In these embodiments, the protective insulatinglayer 110 is formed after the formation of theRDL structure 106. Alternatively, a portion of the top surface of theRDL structure 106 may be in contact with thepassivation layer 112, and another portion of the top surface of theRDL structure 106 may be in contact with the protective insulatinglayer 110. - According to some embodiments, in addition to the
second surface 101 b and thethird surface 101 c of the semiconductor die, the protective insulatinglayer 110 further covers theRDL structure 106 and thepassivation layer 112 can provide an better protection ability of thesemiconductor package structure 50 a. Furthermore, the semiconductor die shift for the RDL structure alignment can be reduced or avoided. Therefore, reliability of thesemiconductor package structure 50 b can be improved. -
FIG. 9B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 9A may be omitted for brevity. In some embodiments, thesemiconductor package structure 50 b is similar to thesemiconductor package structure 50 a shown inFIG. 9A . Compared to thesemiconductor package structure 50 a, thesemiconductor package structure 50 b further includes apassivation layer 105 formed between thefirst surface 101 a of the semiconductor die and theRDL structure 106 and covered by the protective insulatinglayer 110. In some embodiments, the material and the method used for thepassivation layer 105 are the same as or similar to those used for thepassivation layer 112 and different from those used for the protective insulatinglayer 110. - In some embodiments, the
semiconductor package structure 50 b is formed by a method that is similar to the method described inFIG. 9A , except that anadditional passivation layer 105 is formed prior to the formation of theRDL structure 106. Prior to the formation of theRDL structure 106, at least one opening is formed in thepassivation layer 105, so that thepassivation layer 105 exposes theconductive pad 102 and surrounds the opening formed in the insulatinglayer 104. -
FIGS. 10A to 10E are cross-sectional views of an exemplary method of forming a semiconductor package structure in accordance with some embodiments of the disclosure. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIGS. 1A to 1F, 4A to 4E or 6A to 6E may be omitted for brevity. Compared to the semiconductor package structure 10 a-50 b as shown inFIGS. 1A-9B , the following embodiment provides a semiconductor package structure with a fan-out structure. - As shown in
FIG. 10A , in some embodiments, asubstrate 100 is provided. Thesubstrate 100 may be a silicon wafer. For example, thesubstrate 100 may be a silicon substrate or another semiconductor substrate. In some embodiments, thesubstrate 100 include integrated circuits (not shown) therein. - In some embodiments, an insulating
layer 104 is formed on thesubstrate 100. The insulatinglayer 104 may serve as an ILD layer, an IMD layer, a passivation layer or a combination thereof. To simplify the diagram, only a flat layer is depicted herein. In some embodiments, the insulatinglayer 104 is made of an inorganic material, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), a combination thereof, or another suitable insulating material. - Moreover, the insulating
layer 104 includes one or moreconductive pads 102 therein. Theconductive pads 102 are adjacent to the upper surface of thesubstrate 100. Theconductive pad 102 may be formed of metal, such as copper, aluminum, or another suitable metal material. Twoconductive pads 102 formed on thesubstrate 100 and exposed from the insulatinglayer 104 are depicted herein as an example, but the present disclosure is not limit thereto. For example, one or more than twoconductive pads 102 may be formed on thesubstrate 100. - In some embodiments, a conductive layer (not shown), such as a metal layer, is formed on the insulating
layer 104 and passing through the insulatinglayer 104 to electrically couple to the exposedconductive pads 102. Afterwards, the conductive layer is patterned to form aRDL structure 106, so that theRDL structure 106 is electrically coupled to the subsequent formed semiconductor die, as shown inFIG. 10A . - In some embodiments, the
substrate 100 is diced to form semiconductor dies with theRDL structure 106 thereon, as shown inFIG. 10A . Each of the formed semiconductor dies may be a SOC integrated circuit die. The SOC integrated circuit die, for example, may include a logic die including a CPU, a GPU, a DRAM controller, or any combination thereof. Each of the semiconductor dies includes asubstrate 100, one or moreconductive pads 102 formed on thesubstrate 100, and an insulatinglayer 104 formed over thesubstrate 100 and having an opening to expose theconductive pads 102. Moreover, the semiconductor die has afirst surface 101 a (e.g., an active surface of the semiconductor die), asecond surface 101 b (e.g., a non-active surface of the semiconductor die) opposite thefirst surface 101 a, and athird surface 101 c (e.g., a sidewall surface of the semiconductor die) adjoined between thefirst surface 101 a and thesecond surface 101 b. - In some embodiments, the
second surface 101 b of each semiconductor die may be mounted onto a carrier substrate (not shown) via an adhesive layer (not shown) using a pick-and-place process. Next, in some embodiments, a protectiveinsulating layer 110 is formed to cover thefirst surface 101 a and thethird surface 101 c of the semiconductor dies and to surround theRDL structure 106, so that each of the formed semiconductor dies with anRDL structure 106 thereon is encapsulated by the protective insulatinglayer 110. In some embodiments, the protective insulatinglayer 110 protects the semiconductor dies from the environment, thereby preventing the semiconductor die in the subsequently formed semiconductor package structure from damage due to, for example, the stress, the chemicals and/or the moisture. - In some embodiments, the protective insulating
layer 110 is made of an epoxy molding compound (EMC), an Ajinomoto™ Build-up Film (ABF), or an acrylic-based material. In some embodiments, the protective insulatinglayer 110 is made of an epoxy molding compound (EMC) and formed by a molding process. The exemplary formation of the protective insulatinglayer 110 is described above, and will not be repeated again. - After the protective insulating
layer 110 is formed, the semiconductor die with theRDL structure 106 encapsulated by the protective insulatinglayer 110 is de-bonded from the carrier substrate. The exemplary method of de-bonding is described above, and will not be repeated again. As a result, thesecond surface 101 b of each semiconductor die is exposed from the protective insulatinglayer 110. - In some embodiments, after the carrier substrate is removed by the de-bonding process, a grinding process is performed on the top surface of the protective insulating
layer 110 until theRDL structure 106 is exposed from the protective insulatinglayer 110, as shown inFIG. 10C . For example, the top surface of the protective insulatinglayer 110 may be grinded by a CMP process or another suitable grinding process. - Afterwards, the protective insulating
layer 110 and theRDL structure 106 are covered with apassivation layer 112, as shown inFIG. 10D . In some embodiments, thepassivation layer 112 is formed on the protective insulatinglayer 110 and theRDL structure 106 by a coating process or another suitable deposition process. Afterwards, thepassivation layer 112 is patterned by lithography or a combination of lithograph and etching to form openings that expose theRDL structure 106. In some embodiments, thepassivation layer 112 is made of a material that is different from the material of the protective insulatinglayer 110. In some embodiments, thepassivation layer 112 is made of polyimide or polybenzoxazole (PBO). - After openings are formed in the
passivation layer 112, aRDL structure 114 passes through thepassivation layer 112 via those openings formed in thepassivation layer 112, as shown inFIG. 10D . The formation and the material of theRDL structure 114 may include the formation and the material as described above with respect to theRDL structure 106, and will not be repeated again. In some embodiments, theRDL structure 114 fills into the openings formed in thepassivation layer 112, so that each of theRDL structure 114 is electrically coupled to the respective exposedRDL structure 106 under the opening in thepassivation layer 112. - As shown in
FIG. 10D , theRDL structure 114 extends from theRDL structure 106 to above the protective insulatinglayer 110, according to some embodiments. In particular, theRDL structure 114 may extend from directly above thefirst surface 101 a of the semiconductor die to directly above the protective insulatinglayer 110. Accordingly, theRDL structure 114 enables the fan-out connection. - Afterwards, the protective insulating
layer 110, thepassivation layer 112, and theRDL structure 114 are covered with a patternedpassivation layer 116, as shown inFIG. 10D . In some embodiments, thepassivation layer 116 is made of a material that is different from the material of the protective insulatinglayer 110. The formation and the material of thepassivation layer 116 may include the formation and the material as described above with respect to thepassivation layer 112 or thepassivation layer 105, and will not be repeated again. Afterwards, thepassivation layer 116 is patterned by lithography or a combination of lithograph and etching to form openings that expose theRDL structure 114. - After openings are formed in the
passivation layer 116, anUBM layer 122 passes through thepassivation layer 116 via those openings formed in thepassivation layer 116, as shown inFIG. 10D . In some embodiments, theUBM layer 122 fills into the openings formed in thepassivation layer 116, so that each of theconductive structures 120 is electrically coupled to the respective exposedRDL structure 114 under the opening in thepassivation layer 116. - As shown in
FIG. 10E , asolder bump 124 is formed on theUBM layer 122, according to some embodiments. In some embodiments, aconductive structure 120 includes theUBM layer 122 and thesolder bump 124. In some other embodiments, theconductive structure 120 includes a conductive bump structure such as a copper bump, a conductive pillar structure, a conductive wire structure, or a conductive paste structure. In some embodiments, more than oneconductive structures 120 are formed. As shown inFIG. 10E , the gap G1 between theconductive structures 120 may be greater than the gap G2 between theRDL structures 106 to achieve the fan-out structure. - After the
conductive structures 120 are formed, an optional protectiveinsulating layer 130 is formed to cover the exposedsecond surface 101 b of the semiconductor dies, as shown inFIG. 10E . The protectiveinsulating layer 130 is sometimes referred to as a DBF that is made of a thermoset material, such as an epoxy resin material. In some other embodiments, the protective insulatinglayer 130 is made of a material that is the same as the material of the protective insulatinglayer 110. For example, the protective insulatinglayer 130 is made of an epoxy molding compound (EMC), an Ajinomoto™ Build-up Film (ABF), or an acrylic-based material. -
FIG. 10F is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 10E may be omitted for brevity. In some embodiments, thesemiconductor package structure 60 b is similar to thesemiconductor package structure 60 a shown inFIG. 10E . Compared to thesemiconductor package structure 60 a, there is no protective insulatinglayer 130 formed in thepackage structure 60 b, and hence thesecond surface 101 b of the semiconductor die is exposed to the environment. In some embodiments, thesemiconductor package structure 60 b is formed by a method that is similar to the method shown inFIGS. 10A to 10E , except that the formation of the protective insulatinglayer 130, as shown inFIG. 10E , is omitted. -
FIG. 11A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 10E may be omitted for brevity. In some embodiments, thesemiconductor package structure 70 a is similar to thesemiconductor package structure 60 a shown inFIG. 10E . Compared to thesemiconductor package structure 60 a, there is noUBM layer 122 formed in thepackage structure 70 a, and hence thesolder bump 124 is formed directly on thepassivation layer 116. In some embodiments, thesemiconductor package structure 70 a is formed by a method that is similar to the method shown inFIGS. 10A to 10E , except that the formation of theUBM layer 122, as shown inFIG. 10E , is omitted. - As shown in
FIG. 11A , thesolder bump 124 may pass through thepassivation layer 116 via openings formed in thepassivation layer 116. In some embodiments, thesolder bump 124 fills into the openings formed in thepassivation layer 116, so that each of theconductive structures 120 is electrically coupled to the respective exposedRDL structure 114 under the opening in thepassivation layer 116. -
FIG. 11B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 11A may be omitted for brevity. In some embodiments, thesemiconductor package structure 70 b is similar to thesemiconductor package structure 70 a shown inFIG. 11A . Compared to thesemiconductor package structure 70 a, there is no protective insulatinglayer 130 formed in thepackage structure 70 b, and hence thesecond surface 101 b of the semiconductor die is exposed to the environment. -
FIG. 12A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 10E may be omitted for brevity. In some embodiments, thesemiconductor package structure 80 a is similar to thesemiconductor package structure 60 a shown inFIG. 10E . Compared to thesemiconductor package structure 60 a, there is nopassivation layer 105 formed in thepackage structure 80 b, and hence theRDL structure 106 is formed directly on the insulatinglayer 104. In some embodiments, thesemiconductor package structure 80 a is formed by a method that is similar to the method shown inFIGS. 10A to 10E , except that the formation of thepassivation layer 105, as shown inFIG. 10A , is omitted. -
FIG. 12B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 12A may be omitted for brevity. In some embodiments, thesemiconductor package structure 80 b is similar to thesemiconductor package structure 80 a shown inFIG. 12A . Compared to thesemiconductor package structure 80 a, there is no protective insulatinglayer 130 formed in thepackage structure 80 b, and hence thesecond surface 101 b of the semiconductor die is exposed to the environment. -
FIG. 13A is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 10E may be omitted for brevity. In some embodiments, thesemiconductor package structure 90 a is similar to thesemiconductor package structure 60 a shown inFIG. 10E . Compared to thesemiconductor package structure 60 a, there is nopassivation layer 105 and noUBM layer 122 formed in thepackage structure 90 a, and hence theRDL structure 106 is formed directly on the insulatinglayer 104 and thesolder bump 124 is formed directly on thepassivation layer 116. In some embodiments, thesemiconductor package structure 80 a is formed by a method that is similar to the method shown inFIGS. 10A to 10E , except that the formation of thepassivation layer 105 and theUBM layer 122, is omitted. -
FIG. 13B is a cross-sectional view of an exemplary semiconductor package structure in accordance with some embodiments. Descriptions of elements of the embodiments hereinafter that are the same as or similar to those previously described with reference toFIG. 13A may be omitted for brevity. In some embodiments, thesemiconductor package structure 90 b is similar to thesemiconductor package structure 90 a shown inFIG. 13A . Compared to thesemiconductor package structure 90 a, there is no protective insulatinglayer 130 formed in thepackage structure 90 b, and hence thesecond surface 101 b of the semiconductor die is exposed to the environment. - According to the foregoing embodiments, the semiconductor package structure is designed to fabricate a protective structure in the semiconductor package structure to cover or encapsulate the semiconductor die in the semiconductor package structure. The protective structure includes one or more protective insulating layers to protect the semiconductor die from the environment, thereby preventing the semiconductor die in the semiconductor package structure from damage due to, for example, the stress, the chemicals and/or the moisture.
- Due to the topside protection of semiconductor die, the reliability of the semiconductor package structure can be maintained during the subsequent thermal process (such as a surface mount technology (SMT) process or a bonding process). Moreover, the RDL structure formed on the semiconductor die is also protected by the protective structure, so as to keep its electrical and thermal performance. In addition, due to the sidewall protection of semiconductor die, the semiconductor die in the semiconductor package structure can be prevented from chipping when the CSP structure is placed in a test socket for performing a test process.
- Furthermore, the protective insulating layer covers the RDL structure and the passivation layer, the second surface and the third surface of the semiconductor die can provide a better protection ability of the semiconductor package structure, according to some embodiments. In addition, the semiconductor die shift for the RDL structure alignment can be reduced or avoided. Therefore, reliability of the semiconductor package structure can be improved.
- While the invention has been described by way of example and in terms of the preferred embodiments, it should be understood that the invention is not limited to the disclosed embodiments. On the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.
Claims (28)
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US20230073399A1 (en) | 2023-03-09 |
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