US20200203399A1 - Photo detectors - Google Patents
Photo detectors Download PDFInfo
- Publication number
- US20200203399A1 US20200203399A1 US16/231,115 US201816231115A US2020203399A1 US 20200203399 A1 US20200203399 A1 US 20200203399A1 US 201816231115 A US201816231115 A US 201816231115A US 2020203399 A1 US2020203399 A1 US 2020203399A1
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- doped
- layer
- photo diode
- photo
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- 238000002955 isolation Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 47
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- 239000004065 semiconductor Substances 0.000 claims description 32
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 16
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 15
- 229910002601 GaN Inorganic materials 0.000 claims description 14
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 11
- 238000000407 epitaxy Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
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- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
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- 239000010980 sapphire Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
Definitions
- FIGS. 2A-2D illustrate an exemplary fabrication process for the exemplary photo detector of FIG. 1 in accordance with certain aspects of the present disclosure
- stage 200 ( 9 ) includes patterning the fourth hard mask layer 228 in region 216 to form a plurality of trenches.
- each trench in the plurality of trenches has an aspect ratio (height divided by width) of at least 5.
- stage 200 ( 10 ) includes forming a second semiconductor material 230 in the plurality of trenches and on the fourth hard mask layer 228 in region 216 .
- the second semiconductor material 230 may comprise InGaAs.
- the second semiconductor material 230 may be formed by epitaxy growth. When the second semiconductor material 230 is formed by epitaxy growth, defects in the second semiconductor material 230 may be trapped in the plurality of trenches based on the aspect ratio of each trench in the plurality of trenches. That is, the defects in the second semiconductor material 230 may not propagate to top surfaces of the plurality of trenches. Thus, the second semiconductor material 230 that forms above the plurality of trenches may possess high quality with few defects. The high quality second semiconductor material 230 above the plurality of trenches can be used to form photo diode.
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Abstract
Description
- Certain aspects of the present disclosure generally relate to photo detectors, and more particularly, to photo detectors capable of capturing infrared light and ultraviolet light in addition to visible light.
- Cameras are essential components for smartphones. There are generally at least one to two cameras on each smartphone for taking high quality pictures. Most conventional cameras can only capture visible light (i.e., wavelength between 400 nanometer (nm) and 700 nm) and are blind to infrared light (i.e., wavelength between 700 nm and 1000 nm) and ultraviolet light (i.e., wavelength between 10 nm and 400 nm), which may negatively affect quality of pictures in certain situations. It is difficult for conventional cameras that can only capture visible light to take high quality pictures at night when intensity of visible light is low. Meanwhile, a camera that can capture infrared light would be capable of taking high quality pictures at night. Thus, it is desirable to develop a camera that can capture a broad spectrum of light.
- Cameras generally use photo detectors to capture images. When light with different wavelengths is captured, photo detectors based on different materials are used. For example, visible light photo detector usually employs Silicon (Si) as photo detector material. Infrared light photo detector usually employs III-V semiconductor materials, such as Indium Gallium Arsenide (InGaAs), or II-VI semiconductor materials, such as Mercury Cadmium Telluride (HgCdTe), as photo detector material. Ultraviolet light photo detector usually employs III-V semiconductor materials, such as Gallium Nitride (GaN) and Aluminum Nitride (AlN), or II-VI semiconductor materials, such as Zinc Oxide (ZnO), as photo detector material. Because the different materials used for different photo detectors, photo detectors for light with different wavelengths are usually fabricated as separate devices. Thus, it is not possible to capture visible light, infrared light, and ultraviolet light in a same picture using a single photo detector. For smartphones capable of taking pictures using infrared light or ultraviolet light, additional cameras with different photo detectors have to be installed which would occupy additional space on smartphones. Thus, there is a need for a photo detector that is capable of capturing infrared light and ultraviolet light in addition to visible light.
- Certain aspects of the present disclosure provide a photo detector. The photo detector may include a first photo diode configured to capture visible light. The photo detector may also include a second photo diode configured to capture one of infrared light or ultraviolet light. The photo detector may further include a first isolation region between the first photo diode and the second photo diode.
- Certain aspects of the present disclosure provide a method for fabricating a photo detector. The method may include forming a plurality of layers on a substrate. The method may also include forming a first photo diode for capturing visible light on the substrate. The method may further include forming a second photo diode for capturing one of infrared light or ultraviolet light on the substrate, wherein the first photo diode is separated from the second photo diode by a first isolation region.
- This summary has outlined the features and embodiments of the present disclosure so that the following detailed description may be better understood. Additional features and embodiments of the present disclosure will be described below. It should be appreciated by those skilled in the art that this disclosure may be readily utilized as a basis for modifying or designing other equivalent structures for carrying out the same purposes of the present disclosure. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the teachings of the present disclosure as set forth in the appended claims. The features, which are believed to be characteristic of the present disclosure, both as to its organization and method of operation, will be better understood from the following description when considered in connection with the accompanying figures. It is to be expressly understood, however, that each of the figures is provided for the purpose of illustration and description only and is not intended as a definition of the limits of the present disclosure.
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FIG. 1 illustrates an exemplary photo detector capable of capturing infrared light and ultraviolet light in addition to visible light in accordance with certain aspects of the present disclosure; -
FIGS. 2A-2D illustrate an exemplary fabrication process for the exemplary photo detector ofFIG. 1 in accordance with certain aspects of the present disclosure; and -
FIG. 3 is a block diagram showing an exemplary wireless communication system in which an aspect of the present disclosure may be employed. - With reference to the drawing figures, several exemplary aspects of the present disclosure are described. The word “exemplary” is used herein to mean “serving as an example, instance, or illustration.” Any aspect described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other aspects.
- The detailed description set forth below, in connection with the appended drawings, is intended as a description of various aspects and is not intended to represent the only aspect in which the concepts described herein may be practiced. The detailed description includes specific details for the purpose of providing a thorough understanding of the various concepts. It will be apparent to those skilled in the art, however, that these concepts may be practiced without these specific details. In some instances, well-known structures and components are shown in block diagram form in order to avoid obscuring such concepts.
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FIG. 1 illustrates an exemplary photo detector capable of capturing infrared light and ultraviolet light in addition to visible light in accordance with certain aspects of the present disclosure. Aphoto detector 100 is shown inFIG. 1 . Thephoto detector 100 comprises afirst region 102 for capturing visible light, asecond region 104 for capturing infrared light, and athird region 106 for capturing ultraviolet light. Thefirst region 102 for capturing visible light comprises afirst substrate 108, a firstdoped region 110 on thefirst substrate 108, a firstundoped region 112 on the firstdoped region 110, and a seconddoped region 114 on the firstundoped region 112. As an example, thefirst substrate 108 may comprise Silicon (Si) or other substrate materials, such as sapphire. The first dopedregion 110 may comprise P+ doped Si. The firstundoped region 112 may comprise undoped Si. The second dopedregion 114 may comprise N+ doped Si. The first dopedregion 110, the firstundoped region 112, and the second dopedregion 114 form a first photo diode for capturing visible light. Thefirst region 102 also comprises afirst contact 116 on the firstdoped region 110 and asecond contact 118 on the seconddoped region 114. As an example, thefirst contact 116 may comprise Titanium (Ti)/Nickel (Ni)/Platinum (Pt) and thesecond contact 118 may comprise Ti/Ni/Pt. Thefirst contact 116 forms ohmic contact with the firstdoped region 110 and thesecond contact 118 forms ohmic contact with the second dopedregion 114. Thefirst region 102 further comprises a firstcolor filter layer 120 and first onchip lenses 122. As an example, the firstcolor filter layer 120 may comprise color filters for red, blue, and green light, respectively. The first onchip lenses 122 may comprise lenses for red, blue, and green light, respectively. - With continuing reference to
FIG. 1 , thesecond region 104 for capturing infrared light comprises asecond substrate 124, a firsthard mask layer 126 comprising a plurality of trenches on thesecond substrate 124, a firsttrench fill material 128 in the plurality of trenches of the firsthard mask layer 126, a third dopedregion 130 on the firsthard mask layer 126, a secondundoped region 132 on the thirddoped region 130, and a fourthdoped region 134 on the secondundoped region 132. As an example, thesecond substrate 124 may comprise Si or other substrate materials, such as sapphire. The firsthard mask layer 126 may comprise Silicon Nitride (SiN) or Hafnium Oxide (HfO2). The firsttrench fill material 128 may comprise undoped Indium Gallium Arsenide (InGaAs) or Mercury Cadmium Telluride (HgCdTe). The thirddoped region 130 may comprise P+ doped InGaAs or P+ doped HgCdTe. The secondundoped region 132 may comprise undoped InGaAs or undoped HgCdTe. The fourthdoped region 134 may comprise N+ doped InGaAs or N+ doped HgCdTe. The thirddoped region 130, the secondundoped region 132, and the fourthdoped region 134 form a second photo diode for capturing infrared light. Thesecond region 104 also comprises athird contact 136 on the thirddoped region 130 and afourth contact 138 on the fourthdoped region 134. As an example, thethird contact 136 may comprise Ti/Pt and thefourth contact 138 may comprise Ti/Pt or Gold (Au)/Germanium (Ge). Thethird contact 136 forms ohmic contact with the thirddoped region 130 and thefourth contact 138 forms ohmic contact with the fourthdoped region 134. Thesecond region 104 further comprises a secondcolor filter layer 140 and second onchip lenses 142. As an example, the secondcolor filter layer 140 may comprise color filters for infrared light. The second onchip lenses 142 may comprise lenses for infrared light. Thefirst region 102 and thesecond region 104 are separated by afirst isolation region 144. As an example, thefirst isolation region 144 may comprise a Shallow Trench Isolation (STI) region. The STI region may comprise Silicon Dioxide (SiO2). - With continuing reference to
FIG. 1 , thethird region 106 for capturing ultraviolet light comprises athird substrate 148, a secondhard mask layer 150 comprising a plurality of trenches on thethird substrate 148, a secondtrench fill material 152 in the plurality of trenches of the secondhard mask layer 150, a fifthdoped region 154 on the secondhard mask layer 150, a thirdundoped region 156 on the fifthdoped region 154, and a sixthdoped region 158 on the thirdundoped region 156. As an example, thethird substrate 148 may comprise Si or other substrate materials, such as sapphire. The secondhard mask layer 150 may comprise SiN or HfO2. The secondtrench fill material 152 may comprise undoped Gallium Nitride (GaN), Aluminum Gallium Nitride (AlGaN), Indium Gallium Nitride (InGaN), or Zinc Oxide (ZnO). The fifthdoped region 154 may comprise P+ doped GaN, P+ doped AlGaN, P+ doped InGaN, or P+ doped ZnO. The thirdundoped region 156 may comprise undoped GaN, undoped AlGaN, undoped InGaN, or undoped ZnO. The sixthdoped region 158 may comprise N+ doped GaN, N+ doped AlGaN, N+ doped InGaN, or N+ doped ZnO. The fifthdoped region 154, the thirdundoped region 156, and the sixthdoped region 158 form a third photo diode for capturing ultraviolet light. Thethird region 106 also comprises afifth contact 160 on the fifthdoped region 154 and asixth contact 162 on the sixthdoped region 158. As an example, thefifth contact 160 may comprise Au/Ni or Au/Pt and thesixth contact 162 may comprise Au/Ni, Ti/Au, or Ti/Aluminum (Al). Thefifth contact 160 forms ohmic contact with the fifthdoped region 154 and thesixth contact 162 forms ohmic contact with the sixthdoped region 158. Thethird region 106 further comprises a thirdcolor filter layer 164 and third onchip lenses 166. As an example, the thirdcolor filter layer 164 may comprise color filters for ultraviolet light. the third onchip lenses 166 may comprise lenses for ultraviolet light. Thesecond region 104 and thethird region 106 are separated by asecond isolation region 146. As an example, thesecond isolation region 146 may comprise an STI region. The STI region may comprise SiO2. - With continuing reference to
FIG. 1 , thephoto detector 100 is capable of capturing infrared light and ultraviolet light in addition to visible light. Thus, it is possible to capture visible light, infrared light, and ultraviolet light in a same picture using thephoto detector 100 in a camera. Additionally, a camera based on thephoto detector 100 can be used to capture visible light, infrared light, and ultraviolet light. As such, a single camera can be used on a smartphone to take pictures using all these lights. -
FIGS. 2A-2D illustrate an exemplary fabrication process for thephoto detector 100 inFIG. 1 in accordance with certain aspects of the present disclosure. InFIG. 2A , stage 200(1) includes forming a first dopedlayer 204 on asubstrate 202. As an example, thesubstrate 202 may comprise Si or other substrate materials, such as sapphire. The firstdoped layer 204 may comprise P+ doped Si with a thickness of about 0.2 micron (μm) to about 0.5 μm. The firstdoped layer 204 may comprise Boron (B) doped Si. The stage 200(1) also includes forming a firstundoped layer 206 on the first dopedlayer 204. As an example, the firstundoped layer 206 may comprise undoped Si with a thickness of about 2 μm to about 10 μm. The stage 200(1) further includes forming a second dopedlayer 208 on the firstundoped layer 206. As an example, the second dopedlayer 208 may comprise N+ doped Si with a thickness of about 0.2 μm to about 0.5 μm. The seconddoped layer 208 may comprise Arsenic (As) or Phosphorus (P) doped Si. - With continuing reference to
FIG. 2A , stage 200(2) includes formingSTI regions substrate 202, the first dopedlayer 204, the firstundoped layer 206, and the second dopedlayer 208 to form threeregions STI regions STI regions regions - With continuing reference to
FIG. 2A , stage 200(3) includes forming a firsthard mask layer 220 on the second dopedlayer 208. As an example, the firsthard mask layer 220 may comprise Aluminum Oxide (Al2O3) with a thickness of about 10 nm to about 50 nm. - With continuing reference to
FIG. 2A , stage 200(4) includes patterning the firsthard mask layer 220 and removing the first dopedlayer 204, the firstundoped layer 206, and the second dopedlayer 208 inregion 218. The stage 200(4) further includes forming a secondhard mask layer 222 on the firsthard mask layer 220 inregions substrate 202 inregion 218. As an example, the secondhard mask 222 layer may comprise SiN or HfO2 with a thickness of about 200 nm to about 500 nm. - In
FIG. 2B , stage 200(5) includes patterning the secondhard mask layer 222 inregion 218 to form a plurality of trenches. As an example, each trench in the plurality of trenches has an aspect ratio (height divided by width) of at least 5. - With continuing reference to
FIG. 2B , stage 200(6) includes forming afirst semiconductor material 224 in the plurality of trenches and on the secondhard mask layer 222 inregion 218. As an example, thefirst semiconductor material 224 may comprise GaN. Thefirst semiconductor material 224 may be formed by epitaxy growth. When thefirst semiconductor material 224 is formed by epitaxy growth, defects in thefirst semiconductor material 224 may be trapped in the plurality of trenches based on the aspect ratio of each trench in the plurality of trenches. That is, the defects in thefirst semiconductor material 224 may not propagate to top surfaces of the plurality of trenches. Thus, thefirst semiconductor material 224 that forms above the plurality of trenches may possess high quality with few defects. The high qualityfirst semiconductor material 224 above the plurality of trenches can be used to form photo diode. - With continuing reference to
FIG. 2B , stage 200(7) includes Chemical Mechanical Polishing (CMP) thefirst semiconductor material 224 and the secondhard mask layer 222, and removing the firsthard mask layer 220. As an example, the CMP removes the secondhard mask layer 222 and a portion of thefirst semiconductor material 224 and stops at the firsthard mask layer 220. Next, the firsthard mask layer 220 may be removed by wet etching. - With continuing reference to
FIG. 2B , stage 200(8) includes forming a thirdhard mask layer 226 on the second dopedlayer 208 inregions first semiconductor material 224 inregion 218. As an example, the thirdhard mask layer 226 may comprise Al2O3 with a thickness of about 10 nm to about 50 nm. The stage 200(8) also includes patterning the thirdhard mask layer 226 and removing the first dopedlayer 204, the firstundoped layer 206, and the second dopedlayer 208 inregion 216. The stage 200(8) further includes forming a fourthhard mask layer 228 on the thirdhard mask layer 226 inregion 214, on thesubstrate 202 inregion 216, and on the thirdhard mask layer 226 inregion 218. As an example, the fourthhard mask layer 228 may comprise SiN or HfO2 with a thickness of about 200 nm to about 500 nm. - In
FIG. 2C , stage 200(9) includes patterning the fourthhard mask layer 228 inregion 216 to form a plurality of trenches. As an example, each trench in the plurality of trenches has an aspect ratio (height divided by width) of at least 5. - With continuing reference to
FIG. 2C , stage 200(10) includes forming asecond semiconductor material 230 in the plurality of trenches and on the fourthhard mask layer 228 inregion 216. As an example, thesecond semiconductor material 230 may comprise InGaAs. Thesecond semiconductor material 230 may be formed by epitaxy growth. When thesecond semiconductor material 230 is formed by epitaxy growth, defects in thesecond semiconductor material 230 may be trapped in the plurality of trenches based on the aspect ratio of each trench in the plurality of trenches. That is, the defects in thesecond semiconductor material 230 may not propagate to top surfaces of the plurality of trenches. Thus, thesecond semiconductor material 230 that forms above the plurality of trenches may possess high quality with few defects. The high qualitysecond semiconductor material 230 above the plurality of trenches can be used to form photo diode. - With continuing reference to
FIG. 2C , stage 200(11) includes CMP thesecond semiconductor material 230 and the fourthhard mask layer 228, and removing the thirdhard mask layer 226. As an example, the CMP removes the fourthhard mask layer 228 and a portion of thesecond semiconductor material 230 and stops at the thirdhard mask layer 226. Next, the thirdhard mask layer 226 may be removed by wet etching. - With continuing reference to
FIG. 2C , stage 200(12) illustrates inregion 214, there are the first dopedlayer 204, the second dopedlayer 208, and the firstundoped layer 206 between the first dopedlayer 204 and the second dopedlayer 208. As mentioned above, the first dopedlayer 204 may comprise P+ doped Si. The seconddoped layer 208 may comprise N+ doped Si. The firstundoped layer 206 may comprise undoped Si. The firstdoped layer 204, the second dopedlayer 208, and the firstundoped layer 206 inregion 214 form a first photo diode for capturing visible light. The stage 200(12) also illustrates thesecond semiconductor material 230 inregion 216 comprises a thirddoped layer 232, a fourth dopedlayer 234, and a secondundoped layer 236 between the thirddoped layer 232 and the fourth dopedlayer 234. As an example, the thirddoped layer 232 may comprise P+ doped InGaAs. The fourthdoped layer 234 may comprise N+ doped InGaAs. The secondundoped layer 236 may comprise undoped InGaAs. The thirddoped layer 232, the fourth dopedlayer 234, and the secondundoped layer 236 inregion 216 form a second photo diode for capturing infrared light. The thirddoped layer 232 may be formed by epitaxy growth. The fourthdoped layer 234 may be formed by epitaxy growth. The secondundoped layer 236 may be formed by epitaxy growth. Thesecond semiconductor material 230 in the plurality of trenches inregion 216 may comprise undoped InGaAs. The stage 200(12) further illustrates thefirst semiconductor material 224 inregion 218 comprises a fifth dopedlayer 238, a sixthdoped layer 240, and a thirdundoped layer 242 between the fifth dopedlayer 238 and the sixthdoped layer 240. As an example, the fifth dopedlayer 238 may comprise P+ doped GaN. The sixthdoped layer 240 may comprise N+ doped GaN. The thirdundoped layer 242 may comprise undoped GaN. The fifthdoped layer 238, the sixthdoped layer 240, and the thirdundoped layer 242 inregion 218 form a third photo diode for capturing ultraviolet light. The fifthdoped layer 238 may be formed by epitaxy growth. The sixthdoped region 240 may be formed by epitaxy growth. The thirdundoped layer 242 may be formed by epitaxy growth. Thefirst semiconductor material 224 in the plurality of trenches inregion 218 may comprise undoped GaN. The first photo diode for capturing visible light inregion 214, the second photo diode for capturing infrared light inregion 216, and the third photo diode for capturing ultraviolet light inregion 218 form a photo detector capable of capturing infrared light and ultraviolet light in addition to visible light. - In
FIG. 2D , stage 200(13) includes inregion 214, patterning the second dopedlayer 208 and the firstundoped layer 206, forming afirst contact 244 on the first dopedlayer 204, and forming asecond contact 246 on the second dopedlayer 208. As an example, thefirst contact 244 may comprise Ti/Ni/Pt and thesecond contact 246 may comprise Ti/Ni/Pt. Thefirst contact 244 forms ohmic contact with the first dopedlayer 204 and thesecond contact 246 forms ohmic contact with the second dopedlayer 208. The stage 200(13) also includes inregion 216, patterning the fourth dopedlayer 234 and the secondundoped layer 236, forming athird contact 248 on the thirddoped layer 232, and forming afourth contact 250 on the fourthdoped region 234. As an example, thethird contact 248 may comprise Ti/Pt and thefourth contact 250 may comprise Ti/Pt or Au/Ge. Thethird contact 248 forms ohmic contact with the thirddoped layer 232 and thefourth contact 250 forms ohmic contact with the fourth dopedlayer 234. The stage 200(13) further includes inregion 218, patterning the sixthdoped layer 240 and the thirdundoped layer 242, forming afifth contact 252 on the fifth dopedlayer 238, and forming asixth contact 254 on the sixthdoped layer 240. As an example, thefifth contact 252 may comprise Au/Ni or Au/Pt and thesixth contact 254 may comprise Au/Ni, Ti/Au, or Ti/Al. Thefifth contact 252 forms ohmic contact with the fifth dopedlayer 238 and thesixth contact 254 forms ohmic contact with the sixthdoped layer 240. - With continuing reference to
FIG. 2D , stage 200(14) includes inregion 214, forming a firstcolor filter layer 256 on the second dopedlayer 208 and forming first onchip lenses 258 on the firstcolor filter layer 256. As an example, the firstcolor filter layer 256 may comprise color filters for red, blue, and green light, respectively. The first onchip lenses 258 may comprise lenses for red, blue, and green light, respectively. The stage 200(14) also includes inregion 216, forming a secondcolor filter layer 260 on the fourth dopedlayer 234 and forming second onchip lenses 262 on the secondcolor filter layer 260. As an example, the secondcolor filter layer 260 may comprise color filters for infrared light. The second onchip lenses 262 may comprise lenses for infrared light. The stage 200(14) further includes inregion 218, forming a thirdcolor filter layer 264 on the sixthdoped layer 240 and forming third onchip lenses 266 on the thirdcolor filter layer 264. As an example, the thirdcolor filter layer 264 may comprise color filters for ultraviolet light. The third onchip lenses 266 may comprise lenses for ultraviolet light. As mentioned above, the photo detector comprising the photo diodes inregions - The elements described herein are sometimes referred to as means for performing particular functions. In this regard, the first photo diode comprising the first
doped region 110, the firstundoped region 112, and the seconddoped region 114 is sometimes referred to herein as “means for capturing visible light.” The second photo diode comprising the thirddoped region 130, the secondundoped region 132, and the fourthdoped region 134 is sometimes referred to herein as “means for capturing infrared light.” The third photo diode comprising the fifthdoped region 154, the thirdundoped region 156, and the sixthdoped region 158 is sometimes referred to herein as “means for capturing ultraviolet light.” According to a further aspect of the present disclosure, the aforementioned means may be any layer, module, or any apparatus configured to perform the functions recited by the aforementioned means. - The photo detector capable of capturing infrared light and ultraviolet light in addition to visible light according to certain aspects disclosed herein may be provided in or integrated into any electronic device. Examples, without limitation, include a set top box, an entertainment unit, a navigation device, a communication device, a fixed location data unit, a mobile location data unit, a global positioning system (GPS) device, a mobile phone, a cellular phone, a smart phone, a session initiation protocol (SIP) phone, a tablet, a phablet, a server, a computer, a portable computer, a mobile computing device, a wearable computing device (e.g., a smart watch, a health or fitness tracker, eyewear, etc.), a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, a portable digital video player, an automobile, a vehicle component, avionics systems, and a drone.
- In this regard,
FIG. 3 is a block diagram showing an exemplarywireless communication system 300 in which an aspect of the present disclosure may be employed. For purposes of illustration,FIG. 3 shows threeremote units base stations 340. It will be recognized that wireless communication systems may have many more remote units and base stations.Remote units devices FIG. 3 shows forward link signals 380 from thebase stations 340 to theremote units remote units base stations 340. - In
FIG. 3 ,remote unit 320 is shown as a mobile telephone,remote unit 330 is shown as a portable computer, andremote unit 350 is shown as a fixed location remote unit in a wireless local loop system. For example, a remote unit may be a mobile phone, a hand-held personal communication systems (PCS) unit, a portable data unit such as a PDA, a GPS enabled device, a navigation device, a set top box, a music player, a video player, an entertainment unit, a fixed location data unit, such as a meter reading equipment, or other communication device that stores or retrieves data or computer instructions, or combinations thereof. AlthoughFIG. 3 illustrates remote units according to the certain aspects of the present disclosure, the disclosure is not limited to these exemplary illustrated units. Certain aspects of the present disclosure may be suitably employed in many devices, which include the disclosed photo detector. - Those of skill in the art will further appreciate that the various illustrative logical blocks, modules, circuits, and algorithms described in connection with the certain aspects disclosed herein may be implemented as electronic hardware, instructions stored in memory or in another computer readable medium and executed by a processor or other processing device, or combinations of both. The devices described herein may be employed in any circuit, hardware component, IC, or IC chip, as examples. Memory disclosed herein may be any type and size of memory and may be configured to store any type of information desired. To clearly illustrate this interchangeability, various illustrative components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. How such functionality is implemented depends upon the particular application, design choices, and/or design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present disclosure.
- It is also noted that the operational steps described in any of the exemplary aspects herein are described to provide examples and discussion. The operations described may be performed in numerous different sequences other than the illustrated sequences. Furthermore, operations described in a single operational step may actually be performed in a number of different steps. Additionally, one or more operational steps discussed in the exemplary aspects may be combined. It is to be understood that the operational steps illustrated in any flowchart diagrams may be subject to numerous different modifications as will be readily apparent to one of skill in the art. Those of skill in the art will also understand that information and signals may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be referenced throughout the above description may be represented by voltages, currents, electromagnetic waves, magnetic fields or particles, optical fields or particles, or any combination thereof.
- The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
Claims (30)
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