US20200139443A1 - Polycrystalline diamond compact with sintering aid compound, a compound formed from a sintering aid compound, or a mixture thereof - Google Patents
Polycrystalline diamond compact with sintering aid compound, a compound formed from a sintering aid compound, or a mixture thereof Download PDFInfo
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- US20200139443A1 US20200139443A1 US16/335,792 US201616335792A US2020139443A1 US 20200139443 A1 US20200139443 A1 US 20200139443A1 US 201616335792 A US201616335792 A US 201616335792A US 2020139443 A1 US2020139443 A1 US 2020139443A1
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- Prior art keywords
- sintering aid
- compound
- pdc
- sintering
- dissociated
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005245 sintering Methods 0.000 title claims abstract description 195
- 150000001875 compounds Chemical class 0.000 title claims abstract description 100
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 93
- 239000010432 diamond Substances 0.000 title claims abstract description 93
- 239000000203 mixture Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000008569 process Effects 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 239000002245 particle Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 229910052752 metalloid Inorganic materials 0.000 claims description 8
- 150000002738 metalloids Chemical class 0.000 claims description 8
- 229910052755 nonmetal Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 150000002843 nonmetals Chemical class 0.000 claims description 4
- MPDDTAJMJCESGV-CTUHWIOQSA-M (3r,5r)-7-[2-(4-fluorophenyl)-5-[methyl-[(1r)-1-phenylethyl]carbamoyl]-4-propan-2-ylpyrazol-3-yl]-3,5-dihydroxyheptanoate Chemical compound C1([C@@H](C)N(C)C(=O)C2=NN(C(CC[C@@H](O)C[C@@H](O)CC([O-])=O)=C2C(C)C)C=2C=CC(F)=CC=2)=CC=CC=C1 MPDDTAJMJCESGV-CTUHWIOQSA-M 0.000 description 31
- 150000002739 metals Chemical class 0.000 description 7
- 238000005553 drilling Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000002386 leaching Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- -1 or Co Substances 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- DEVSOMFAQLZNKR-RJRFIUFISA-N (z)-3-[3-[3,5-bis(trifluoromethyl)phenyl]-1,2,4-triazol-1-yl]-n'-pyrazin-2-ylprop-2-enehydrazide Chemical compound FC(F)(F)C1=CC(C(F)(F)F)=CC(C2=NN(\C=C/C(=O)NNC=3N=CC=NC=3)C=N2)=C1 DEVSOMFAQLZNKR-RJRFIUFISA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 239000008240 homogeneous mixture Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- CSJDCSCTVDEHRN-UHFFFAOYSA-N methane;molecular oxygen Chemical compound C.O=O CSJDCSCTVDEHRN-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910019096 CoTiO3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- OBOXTJCIIVUZEN-UHFFFAOYSA-N [C].[O] Chemical class [C].[O] OBOXTJCIIVUZEN-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005087 graphitization Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
- C04B35/528—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
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- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B10/00—Drill bits
- E21B10/42—Rotary drag type drill bits with teeth, blades or like cutting elements, e.g. fork-type bits, fish tail bits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B22F2302/00—Metal Compound, non-Metallic compound or non-metal composition of the powder or its coating
- B22F2302/10—Carbide
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- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2302/00—Metal Compound, non-Metallic compound or non-metal composition of the powder or its coating
- B22F2302/40—Carbon, graphite
- B22F2302/406—Diamond
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
- C04B2235/3234—Titanates, not containing zirconia
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/427—Diamond
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- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
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- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/08—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on tungsten carbide
Definitions
- the current disclosure relates to a polycrystalline diamond compact (PDC), such as a cutter in an earth-boring drill bit.
- PDC polycrystalline diamond compact
- Components of various industrial devices are often subjected to extreme conditions, such as high temperatures and high impact contact with hard and/or abrasive surfaces.
- extreme temperatures and pressures are commonly encountered during drilling for oil extraction or mining purposes.
- Diamond with its unsurpassed mechanical properties, can be the most effective material when properly used in a cutting element or abrasion-resistant contact element for use in drilling. Diamond is exceptionally hard, conducts heat away from the point of contact with the abrasive surface, and may provide other benefits in such conditions.
- Diamond in a polycrystalline form has added toughness as compared to single-crystal diamond due to the random distribution of the diamond crystals, which avoids particular planes of cleavage from traversing the whole diamond thickness, such as, can be found in single-crystal diamond. Therefore, polycrystalline diamond is frequently the preferred form of diamond in many drilling applications.
- a drill bit cutting element that utilizes polycrystalline diamond is commonly referred to as a polycrystalline diamond compact (PDC) cutter. Accordingly, a drill bit incorporating PDC cutters may be referred to as a PDC bit.
- PDCs can be manufactured in a cubic, belt, or other press by subjecting small grains of diamond and other starting materials to ultrahigh pressure and temperature conditions.
- One PDC manufacturing process involves forming a polycrystalline diamond table directly onto a substrate, such as a tungsten carbide substrate. The process involves placing a substrate containing a sintering aid, such as cobalt (Co), along with loose diamond grains mixed into a container of a press, and subjecting the contents of the press to a high-temperature high-pressure (HTHP) press cycle. The high temperature and pressure cause the small diamond grains to form into an integral polycrystalline diamond table intimately bonded to the substrate, with Co acting as sintering aid to promote the formation of new diamond-diamond bonds.
- a sintering aid such as cobalt (Co)
- sintering aids such as Co
- CTE coefficient of thermal expansion
- PDC polycrystalline diamond
- a polycrystalline diamond table may be leached to remove at least a portion of the sintering aid.
- the resulting leached PDC is more thermally stable than a similar, non-leached PDC. Leaching large portions of the sintering aid results in a thermally stable polycrystalline (TSP) diamond table.
- TSP cutters At a certain temperature, typically at least 750° C. at normal atmospheric pressure, the TSP cutters will not crack or graphitize, but non-leached PDC cutters will crack or graphitize under similar conditions.
- TSP diamond table needs to be reattached to a new substrate (the original one on which the polycrystalline diamond was formed often being removed prior to or destroyed in the leaching process) to form a TSP cutter.
- Leaching thus remedies some of the problems causes by residual sintering aid in the diamond table of a PCD, but at the same time, it leaves pores or cavities where the leached sintering aid used to be, which can deteriorate mechanical properties of the PDC cutters, for example by making it brittle and decreasing its impact toughness.
- FIG. 1 is a not-to-scale, cross-sectional schematic diagram of a sintering assembly for a PDC cutter
- FIG. 2 is a not-to-scale, cross-sectional schematic diagram of a sintering assembly for a PDC cutter during sintering;
- FIG. 3 is a not-to-scale, cross-sectional schematic diagram of a PDC in the form of a PDC cutter
- FIG. 4 is a is an earth-boring drill bit including at least one PDC in the form of a PDC cutter.
- the present disclosure relates to a PDC containing a sintering aid compound, a compound formed from the sintering aid compound, or a mixture thereof and methods of forming a PDC using a sintering aid compound.
- the sintering aid compound includes a sintering aid component and a non-sintering component.
- the sintering aid compound has a linear or volumetric CTE or both lower than that of the uncompounded sintering aid, making its linear or volumetric CTE or both closer to that of diamond and thereby reducing negative effects of different linear or volumetric CTEs or both of the diamond and sintering aid, such as cracking during actual use of PDC cutters in drilling and/or downhole applications.
- the sintering aid compound has a dissociation constant such that the sintering aid component dissociates from the sintering aid compound during HTHP press conditions in an amount sufficient to catalyze the formation of diamond-diamond bonds.
- the dissociation constant is also such that the sintering aid remains substantially in the sintering aid compound during PDC use and does not dissociate under use conditions in an amount sufficient to cause substantial graphitization of the polycrystalline diamond table or substantial damage due to its difference in linear or volumetric CTE or both as compared to diamond.
- residual sintering aid compound or a derivative compound formed from it may remain in the polycrystalline diamond table of the PDC and provide mechanical support.
- Derivative compounds typically also have a linear or volumetric CTE or both closer to that of diamond than the sintering aid does.
- sintering assembly 10 includes can 20 containing substrate 30 , diamond grains 40 , and sintering aid compound 50 .
- sintering aid compound 50 dissociates into dissociated sintering aid 60 , which catalyzes diamond-diamond bonds between diamond grains 40 .
- Dissociated sintering aid 60 may also catalyze diamond-substrate bonds between diamond grains 40 and substrate 30 .
- Sintering aid compound 50 also forms dissociated non-sintering component 70 , which may further react to form derivative compound 80 .
- PDC 100 contains sintering aid compound 50 . It may also contain dissociated sintering aid 60 , for instance in low amounts such as less than 0.5 wt %, less than 0.1 wt %, or less than 0.01 wt %, or it may not contain any substantial amounts of any dissociated sintering aid 60 . Dissociated sintering aid 60 may be detected by X-ray diffraction or other phase analysis techniques.
- PDC 100 may further contain dissociated non-sintering component 70 or derivative compound 80 , formed from the dissociated non-sintering component of sintering aid compound 50 .
- FIG. 3 illustrates PDC 100 with sintering aid compound 50 , dissociated non-sintering component 70 , and derivative compound 80
- PDC 100 may have only one or only two such components. For instance, it is even possible that all of sintering aid compound 50 will dissociate during the HTHP process and only dissociated non-sintering component 70 or derivative compound 80 will remain. As noted above, small amounts of dissociated sintering aid 60 may also remain.
- PDC 100 may be used as-is without being subjected to leaching or any other process to remove dissociated sintering aid 60 or sintering aid compound 50 or, if present dissociated non-sintering component 70 or derivative compound 80 .
- PDC 100 may include TSP.
- Substrate 30 may be any substrate suitable for use in PDC 100 .
- it may be a conventional substrate, such as a cemented tungsten carbide substrate.
- Substrates in conventional PDC formation typically contain the sintering aid and supply it to the diamond grains during the HTPT process.
- PDC 100 is formed using sintering aid compound 50 , such that there is no need for a sintering aid in substrate 30 .
- it may actually be detrimental to have a sintering aid in substrate 30 , as it will migrate into polycrystalline diamond table 90 during the HTHP process and cause the same detrimental effects as in a conventional PDC unless it is removed via leaching.
- substrate 30 may lack any sintering aid.
- substrate 30 may be formed from materials that do not require a sintering aid 60 in substrate 30 to form substrate 30 , such as during the HTHP process, to remain intact, or at bond to polycrystalline diamond table 90 .
- FIGS. 1-3 illustrate a PDC with a substrate 30
- a substrate may be later attached to a PDC thus formed, if needed.
- Diamond grains 40 may be any suitable diamond grains, including diamond grains of substantially uniform grain sizes, diamond grains of mixed grain sizes, or mixtures thereof located in different areas of polycrystalline diamond table 90 after it is formed.
- Sintering aid compound 50 may include any suitable sintering aid component able to form dissociated sintering aid 60 and another element or group of elements that form dissociated non-sintering component 70 .
- Dissociated sintering aid 60 may include a group VIII metal. It may also include cobalt (Co), nickel (Ni), iron (Fe), copper (Cu), chromium (Cr), manganese (Mn), ruthenium (Ru), rhodium (Rh), platinum (Pt), tantalum (Ta), osmium (Os), or iridium (Ir).
- Dissociated sintering aid 60 may be a single metal, or it may be a combination of metals formed from different sintering aid compounds 50 , one for each metal. The combination of metals may act separately, or they may alloy to form an alloyed dissociated sintering aid 60 .
- Sintering aid compound 50 may include one compound or combination of compounds. For instance, even when only one dissociated sintering aid 60 is used, it may be dissociated from a plurality of different compounds of that sintering aid. The plurality of different compounds may be added at the outset, or may form prior to, during or after sintering. Transition metals are able to exist in a variety of valence states and therefore are particularly likely to form a group of compounds even when compounded with the same elements or elements.
- dissociated sintering aid 60 may be formed from a combination of metals formed from different sintering aid compounds, in which case sintering aid compound 50 also includes a combination of compounds.
- sintering aid compound 50 is discussed herein as an electroneutral compound, it may exist as paired ions in some circumstances.
- Each individual compound in sintering aid compound 50 may have the general formula M 1 x M 2 y Q p , wherein M 1 is a Group VIII metal, or Co, Ni, Fe, Cu, Cr, Mn, Ru, Rh, Pt, Ta, Os, or Is sintering aid, or a combination of at least two such metals and x>0, M 2 is a non-sintering metal or combination of at least two such non-sintering metals and y ⁇ 0, and Q is a non-metal, metalloid, or a combination of at least two non-metals or metalloids and p>0.
- x, y and p are also such that sintering aid compound 50 is electroneutral.
- M 1 x M 2 y Q p dissociates to form dissociated sintering aid 60 from M 1 and dissociated non-sintering component 70 from M 2 y Q p .
- the general dissociation reaction (I) is as follows:
- M 1 will typically be the metal in a neutral valence state.
- the relative amounts of elements in M 2 Q will typically be such that the compound is electroneutral as well.
- reaction (II) The further reaction of M 2 Q may go on to further react to form derivative compound 80 as shown by reaction (II) as follows:
- M 2 X and Q will be such that the compounds are electroneutral or elements are in their neutral valence state.
- X may be carbon (C), such as carbon in diamond grains 40 , or another component of the polycrystalline diamond table.
- reaction (III) Alternatively the further reaction of M 2 Q to form derivative compound 80 may be shown by reaction (III) as follows:
- M 2 will typically be the metal in a neutral valence state.
- the relative amounts of elements in QX will typically be such that the material is electroneutral as well.
- sintering aid compound 50 may be cobalt (II) titanate (CoTiO 3 ), which may dissociate into Co as dissociated sintering aid 60 and TiO 2 as dissociated non-sintering component 70 .
- dissociated non-sintering component 70 may further react with C contained in diamond grains 40 , to form titanium carbide (TiC) as derivative compound 80 .
- derivative compound 80 may often be a metal carbide, as these materials tend to have a linear or volumetric CTE or both similar to that of substrate 30 and closer to the CTE of diamond than the sintering aid.
- metal carbides tend to have a desirable impact strength, imparting additional impact toughness to the PDC 100 overall.
- M 2 metals include titanium (Ti), zirconium (Zr), tungsten (W), tantalum (Ta), molybdenum (Mo), vanadium (V), niobium (Nb) and hafnium (Hf) because these metals may form carbides.
- Oxygen (O) is a particularly useful Q element because it can form oxygen gas (O 2 ) which may exit PDC 100 and which is relatively safe.
- Carbon-oxygen (C—O) compounds and ions, such as carbonates, or silicon-oxygen (Si—O) compounds and ions, such as silicates, may also be particularly useful Q components due to their ability to form O 2 or, in the case of carbon-oxygen compounds and ions, CO 2 , which may also exit PDC 100 , and to produce C or Si or their compounds in PDC 100 .
- Sintering aid compound 50 may have a linear CTE of 5 ⁇ 10 ⁇ 6 /K or less, 3 ⁇ 10 ⁇ 6 /K or less, or 2 ⁇ 10 ⁇ 6 /K or less at 20° C.
- Non-sintering compound 70 may have a linear CTE of 5 ⁇ 10 ⁇ 6 /K or less, 3 ⁇ 10 ⁇ 6 /K or less, or 2 ⁇ 10 ⁇ 6 /K or less at 20° C.
- Derivative compound 80 may have a linear CTE of 5 ⁇ 10 ⁇ 6 /K or less, 3 ⁇ 10 ⁇ 6 /K or less, or 2 ⁇ 10 ⁇ 6 /K or less at 20° C.
- Sintering aid compound 50 may have a linear CTE of 8 ⁇ 10 ⁇ 6 /K or less, 6 ⁇ 10 ⁇ 6 /K or less, or 4 ⁇ 10 ⁇ 6 /K or less at 20° C.
- Non-sintering compound 70 may have a linear CTE of 8 ⁇ 10 ⁇ 6 /K or less, 6 ⁇ 10 ⁇ 6 /K or less, or 4 ⁇ 10 ⁇ 6 /K or less at 20° C.
- Derivative compound 80 may have a linear CTE of 8 ⁇ 10 ⁇ 6 /K or less, 6 ⁇ 10 ⁇ 6 /K or less, or 4 ⁇ 10 ⁇ 6 /K or less at 20° C.
- the disclosure further provides a method of forming a PDC, such as PDC 100 .
- PDC diamond grains 40 and sintering aid compound 50 are placed in can 20 as shown in FIG. 1 .
- Sintering aid compound 50 may be in the form of microparticles, which have a largest dimension on average of between 1 ⁇ m and 1000 ⁇ m.
- Sintering aid compound 50 may also be in the form of nanoparticles, which have a largest dimension on average of between 1 nm and 1000 nm.
- sintering aid compound 50 may have a largest dimension of between 200 nm and 5 ⁇ m.
- sintering aid compound 50 may be mono-disperse, with an average size variation in the largest dimension of 10% or less.
- Sintering aid compound 50 is mixed with diamond grains 40 , as shown in FIG. 1 .
- the mixing may be homogeneous or sintering aid compound 50 may be in higher proportions in some areas.
- the formation of a homogenous mixture may be facilitated by using sintering aid compound 50 particles that are similar in dimension to diamond grains 40 . For instance sintering aid particles to may have an average largest dimension within 5% of the average largest dimension of diamond grains 40 .
- Sintering aid compound 50 may be formed into particles through mechanical processing, such as ball milling. Sintering aid compound may also be formed into discrete particles rather than clumps or agglomerates, with no more than 1% of particles physically attached to another particle. Discrete particles also facilitate the formation of a homogeneous mixture with diamond grains 40 .
- sintering aid compound 50 dissociates into dissociated sintering aid 60 , as shown in FIG. 2 .
- Dissociated sintering aid 60 is already located near diamond grains 40 .
- less sintering aid may be used than in conventional processes or HTHP press cycle time is reduced to increase productivity, in which the sintering aid typically must migrate from a substrate into the diamond grains. This is particularly true when sintering aid compound 50 is in the form of particles homogeneously mixed with diamond grains 40 .
- the amount of sintering aid compound 50 may be such that the total amount of the sintering aid component, such as Co, whether dissociated or in the compound, is less than 10 wt % of polycrystalline diamond table 90 . It may also be less than 8 wt %, less than 4.5 wt %, less than 3 wt %, less than 2 wt %, or less than 1 wt %.
- the temperature of the HTHP process is typically at least the eutectic temperature of the sintering aid component in sintering aid compound 50 so that dispersed sintering aid 60 is in a liquid state. If dispersed sintering aid 60 is formed from an alloy, the temperature of the HTHP process may be at least the applicable alloying temperature, which is typically at least the eutectic temperature of the alloy component with the highest eutectic temperature.
- Non-sintering aid component 70 may also be formed during the HTHP process.
- Derivative compound 80 may be formed during HTHP process or after the process has been completed and polycrystalline diamond table 90 is cooled.
- FIG. 4 illustrates a fixed cutter drill bit 200 containing a plurality of cutters 210 coupled to drill bit body 220 . At least one of cutters 210 may be a PDC 100 as described in FIG. 3 .
- Bit body 220 may include a plurality of blades 230 extending therefrom.
- Bit body 220 may be formed from steel, a steel alloy, a matrix material, or other suitable bit body material with desired strength, toughness and machinability.
- Bit body 220 may be formed to have desired wear and erosion properties.
- PDC cutters 210 may be mounted on the bit using methods of this disclosure or using other methods. PDC cutters may be located in gage region 240 , or in a non-gage region, or both.
- Drilling action associated with drill bit 200 may occur as bit body 220 is rotated relative to the bottom of a wellbore in response to rotation of an associated drill string. At least some PDC cutters 210 disposed on associated blades 230 may contact adjacent portions of a downhole formation during drilling. These PDC cutters 210 may be oriented such that their polycrystalline diamond tables contact the formation.
- the present disclosure provides an embodiment A relating to a PDC including a substrate and a polycrystalline diamond table including a sintering aid compound, a dissociated non-sintering aid component, a derivative compound, or a mixture thereof and dissociated sintering aid.
- the present disclosure also provides an embodiment B relating to an earth-boring drill bit containing a bit body and the PDC of embodiment A in the form of a cutter.
- the present disclosure also provides an embodiment C relating to a method of forming a PDC including placing a substrate and a mixture of diamond grains and a sintering aid compound in a can to form a sintering assembly and performing an HTHP process on the sintering assembly to form a PDC including the substrate and a polycrystalline diamond table formed from the diamond grains and the sintering aid compound and including the sintering aid compound, a dissociated non-sintering aid component, a derivative compound, or a mixture thereof and further including dissociated sintering aid.
- embodiments A, B and C may be used in conjunction with the following additional elements, which may also be combined with one another unless clearly mutually exclusive, and which method elements may be used to obtain devices and which device elements may result from methods: i) the substrate may not include a sintering aid; ii) the sintering aid compound may include a sintering aid component M 1 and a non-sintering aid component M 2 Q and have the general formula M 1 x M 2 y Q p , wherein M 1 is a Group VIII metal,
- M 2 is a metal other than M 1
- Q is a non-metal, metalloid, or a combination of at least two non-metals or metalloids, x>0, y>0, p>0, and x, y and p are such that the sintering aid compound is electroneutral;
- the derivative compound may be formed from the dissociated non-sintering aid component;
- the derivative compound may be a metal carbide;
- each of the sintering aid compound, dissociated non-sintering aid component, and derivative compound may have a linear coefficient of thermal expansion (CTE) of 5 ⁇ 10 ⁇ 6 /K or less;
- the sintering aid compound may be in the form of particles; vii) the mixture of diamond grains and sintering aid compound may be homogeneous; viii) the sintering aid compound particles may have an average largest dimension within 5% of an average largest dimension of the diamond grains; ix) the sintering aid compound may dissoci
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Abstract
Description
- The current disclosure relates to a polycrystalline diamond compact (PDC), such as a cutter in an earth-boring drill bit.
- Components of various industrial devices are often subjected to extreme conditions, such as high temperatures and high impact contact with hard and/or abrasive surfaces. For example, extreme temperatures and pressures are commonly encountered during drilling for oil extraction or mining purposes. Diamond, with its unsurpassed mechanical properties, can be the most effective material when properly used in a cutting element or abrasion-resistant contact element for use in drilling. Diamond is exceptionally hard, conducts heat away from the point of contact with the abrasive surface, and may provide other benefits in such conditions.
- Diamond in a polycrystalline form has added toughness as compared to single-crystal diamond due to the random distribution of the diamond crystals, which avoids particular planes of cleavage from traversing the whole diamond thickness, such as, can be found in single-crystal diamond. Therefore, polycrystalline diamond is frequently the preferred form of diamond in many drilling applications. A drill bit cutting element that utilizes polycrystalline diamond is commonly referred to as a polycrystalline diamond compact (PDC) cutter. Accordingly, a drill bit incorporating PDC cutters may be referred to as a PDC bit.
- PDCs can be manufactured in a cubic, belt, or other press by subjecting small grains of diamond and other starting materials to ultrahigh pressure and temperature conditions. One PDC manufacturing process involves forming a polycrystalline diamond table directly onto a substrate, such as a tungsten carbide substrate. The process involves placing a substrate containing a sintering aid, such as cobalt (Co), along with loose diamond grains mixed into a container of a press, and subjecting the contents of the press to a high-temperature high-pressure (HTHP) press cycle. The high temperature and pressure cause the small diamond grains to form into an integral polycrystalline diamond table intimately bonded to the substrate, with Co acting as sintering aid to promote the formation of new diamond-diamond bonds.
- Although useful in creating the polycrystalline diamond table, sintering aids, such as Co, typically have a coefficient of thermal expansion (CTE), both linear and volumetric, significantly higher than that of diamond, such that, when the PDC heats up during use, remaining sintering aid material within polycrystalline diamond (PDH) expands more rapidly or to a greater degree than the diamond, sometimes causing cracks/micro cracks or otherwise modifying residual stresses within the diamond grains. A polycrystalline diamond table may be leached to remove at least a portion of the sintering aid. The resulting leached PDC is more thermally stable than a similar, non-leached PDC. Leaching large portions of the sintering aid results in a thermally stable polycrystalline (TSP) diamond table. At a certain temperature, typically at least 750° C. at normal atmospheric pressure, the TSP cutters will not crack or graphitize, but non-leached PDC cutters will crack or graphitize under similar conditions. TSP diamond table needs to be reattached to a new substrate (the original one on which the polycrystalline diamond was formed often being removed prior to or destroyed in the leaching process) to form a TSP cutter.
- Leaching thus remedies some of the problems causes by residual sintering aid in the diamond table of a PCD, but at the same time, it leaves pores or cavities where the leached sintering aid used to be, which can deteriorate mechanical properties of the PDC cutters, for example by making it brittle and decreasing its impact toughness.
- A more complete understanding of the present embodiments and advantages thereof may be acquired by referring to the following description taken in conjunction with the accompanying drawings, which show particular embodiments of the current disclosure, in which like numbers refer to similar components, and in which:
-
FIG. 1 is a not-to-scale, cross-sectional schematic diagram of a sintering assembly for a PDC cutter; -
FIG. 2 is a not-to-scale, cross-sectional schematic diagram of a sintering assembly for a PDC cutter during sintering; -
FIG. 3 is a not-to-scale, cross-sectional schematic diagram of a PDC in the form of a PDC cutter; and -
FIG. 4 is a is an earth-boring drill bit including at least one PDC in the form of a PDC cutter. - The present disclosure relates to a PDC containing a sintering aid compound, a compound formed from the sintering aid compound, or a mixture thereof and methods of forming a PDC using a sintering aid compound. The sintering aid compound includes a sintering aid component and a non-sintering component. The sintering aid compound has a linear or volumetric CTE or both lower than that of the uncompounded sintering aid, making its linear or volumetric CTE or both closer to that of diamond and thereby reducing negative effects of different linear or volumetric CTEs or both of the diamond and sintering aid, such as cracking during actual use of PDC cutters in drilling and/or downhole applications.
- In addition the sintering aid compound has a dissociation constant such that the sintering aid component dissociates from the sintering aid compound during HTHP press conditions in an amount sufficient to catalyze the formation of diamond-diamond bonds. However, the dissociation constant is also such that the sintering aid remains substantially in the sintering aid compound during PDC use and does not dissociate under use conditions in an amount sufficient to cause substantial graphitization of the polycrystalline diamond table or substantial damage due to its difference in linear or volumetric CTE or both as compared to diamond. This allows the PDC to benefit from the lower linear or volumetric CTE or both of the sintering aid compound and its ability to keep the sintering aid in a form that does not graphitize diamond, while still having sufficient dissociated sintering aid to form the polycrystalline diamond table in the first place.
- In addition, residual sintering aid compound or a derivative compound formed from it may remain in the polycrystalline diamond table of the PDC and provide mechanical support. Derivative compounds typically also have a linear or volumetric CTE or both closer to that of diamond than the sintering aid does.
- Referring to
FIG. 1 ,sintering assembly 10 includes can 20 containingsubstrate 30,diamond grains 40, and sinteringaid compound 50. As shown inFIG. 2 , when can 20 is subjected to a HTHP process, somesintering aid compound 50 dissociates into dissociatedsintering aid 60, which catalyzes diamond-diamond bonds betweendiamond grains 40. Dissociatedsintering aid 60 may also catalyze diamond-substrate bonds betweendiamond grains 40 andsubstrate 30.Sintering aid compound 50 also forms dissociatednon-sintering component 70, which may further react to formderivative compound 80. - After the HTHP process, polycrystalline diamond table 90 as shown in
FIG. 3 has been formed onsubstrate 30 to producePDC 100. PDC 100 containssintering aid compound 50. It may also contain dissociatedsintering aid 60, for instance in low amounts such as less than 0.5 wt %, less than 0.1 wt %, or less than 0.01 wt %, or it may not contain any substantial amounts of any dissociatedsintering aid 60. Dissociatedsintering aid 60 may be detected by X-ray diffraction or other phase analysis techniques. -
PDC 100 may further contain dissociatednon-sintering component 70 orderivative compound 80, formed from the dissociated non-sintering component ofsintering aid compound 50. AlthoughFIG. 3 illustratesPDC 100 withsintering aid compound 50, dissociatednon-sintering component 70, andderivative compound 80,PDC 100 may have only one or only two such components. For instance, it is even possible that all of sinteringaid compound 50 will dissociate during the HTHP process and only dissociatednon-sintering component 70 orderivative compound 80 will remain. As noted above, small amounts of dissociatedsintering aid 60 may also remain. -
PDC 100 may be used as-is without being subjected to leaching or any other process to remove dissociatedsintering aid 60 or sinteringaid compound 50 or, if present dissociatednon-sintering component 70 orderivative compound 80. PDC 100 may include TSP. -
Substrate 30 may be any substrate suitable for use inPDC 100. In particular, it may be a conventional substrate, such as a cemented tungsten carbide substrate. Substrates in conventional PDC formation typically contain the sintering aid and supply it to the diamond grains during the HTPT process. PDC 100 is formed usingsintering aid compound 50, such that there is no need for a sintering aid insubstrate 30. In some instances, it may actually be detrimental to have a sintering aid insubstrate 30, as it will migrate into polycrystalline diamond table 90 during the HTHP process and cause the same detrimental effects as in a conventional PDC unless it is removed via leaching. Thus,substrate 30 may lack any sintering aid. As a result,substrate 30 may be formed from materials that do not require asintering aid 60 insubstrate 30 to formsubstrate 30, such as during the HTHP process, to remain intact, or at bond to polycrystalline diamond table 90. - Although
FIGS. 1-3 illustrate a PDC with asubstrate 30, it is also possible to form a PDC according to this disclosure without asubstrate 30. A substrate may be later attached to a PDC thus formed, if needed. -
Diamond grains 40 may be any suitable diamond grains, including diamond grains of substantially uniform grain sizes, diamond grains of mixed grain sizes, or mixtures thereof located in different areas of polycrystalline diamond table 90 after it is formed. -
Sintering aid compound 50 may include any suitable sintering aid component able to form dissociatedsintering aid 60 and another element or group of elements that form dissociated non-sinteringcomponent 70. Dissociatedsintering aid 60 may include a group VIII metal. It may also include cobalt (Co), nickel (Ni), iron (Fe), copper (Cu), chromium (Cr), manganese (Mn), ruthenium (Ru), rhodium (Rh), platinum (Pt), tantalum (Ta), osmium (Os), or iridium (Ir).Dissociated sintering aid 60 may be a single metal, or it may be a combination of metals formed from different sintering aid compounds 50, one for each metal. The combination of metals may act separately, or they may alloy to form an alloyeddissociated sintering aid 60. -
Sintering aid compound 50 may include one compound or combination of compounds. For instance, even when only one dissociatedsintering aid 60 is used, it may be dissociated from a plurality of different compounds of that sintering aid. The plurality of different compounds may be added at the outset, or may form prior to, during or after sintering. Transition metals are able to exist in a variety of valence states and therefore are particularly likely to form a group of compounds even when compounded with the same elements or elements. - In addition, as noted above, dissociated sintering
aid 60 may be formed from a combination of metals formed from different sintering aid compounds, in which casesintering aid compound 50 also includes a combination of compounds. - Although sintering
aid compound 50 is discussed herein as an electroneutral compound, it may exist as paired ions in some circumstances. - Each individual compound in
sintering aid compound 50 may have the general formula M1 xM2 yQp, wherein M1 is a Group VIII metal, or Co, Ni, Fe, Cu, Cr, Mn, Ru, Rh, Pt, Ta, Os, or Is sintering aid, or a combination of at least two such metals and x>0, M2 is a non-sintering metal or combination of at least two such non-sintering metals and y≥0, and Q is a non-metal, metalloid, or a combination of at least two non-metals or metalloids and p>0. x, y and p are also such thatsintering aid compound 50 is electroneutral. M1 xM2 yQp dissociates to form dissociatedsintering aid 60 from M1 and dissociatednon-sintering component 70 from M2 yQp. The general dissociation reaction (I) is as follows: -
M1 xM2 yQp↔M1+M2Q (I). - M1 will typically be the metal in a neutral valence state. The relative amounts of elements in M2Q will typically be such that the compound is electroneutral as well.
- The further reaction of M2Q may go on to further react to form
derivative compound 80 as shown by reaction (II) as follows: -
M2Q+X↔M2X+Q (II). - M2X and Q will be such that the compounds are electroneutral or elements are in their neutral valence state. X may be carbon (C), such as carbon in
diamond grains 40, or another component of the polycrystalline diamond table. - Alternatively the further reaction of M2Q to form
derivative compound 80 may be shown by reaction (III) as follows: -
M2Q↔M2+QX (III). - M2 will typically be the metal in a neutral valence state. The relative amounts of elements in QX will typically be such that the material is electroneutral as well.
- In one example, sintering
aid compound 50 may be cobalt (II) titanate (CoTiO3), which may dissociate into Co as dissociated sinteringaid 60 and TiO2 as dissociatednon-sintering component 70. In addition, dissociatednon-sintering component 70 may further react with C contained indiamond grains 40, to form titanium carbide (TiC) asderivative compound 80. - In general,
derivative compound 80 may often be a metal carbide, as these materials tend to have a linear or volumetric CTE or both similar to that ofsubstrate 30 and closer to the CTE of diamond than the sintering aid. In addition, metal carbides tend to have a desirable impact strength, imparting additional impact toughness to thePDC 100 overall. - Particularly useful M2 metals include titanium (Ti), zirconium (Zr), tungsten (W), tantalum (Ta), molybdenum (Mo), vanadium (V), niobium (Nb) and hafnium (Hf) because these metals may form carbides.
- Oxygen (O) is a particularly useful Q element because it can form oxygen gas (O2) which may exit
PDC 100 and which is relatively safe. Carbon-oxygen (C—O) compounds and ions, such as carbonates, or silicon-oxygen (Si—O) compounds and ions, such as silicates, may also be particularly useful Q components due to their ability to form O2 or, in the case of carbon-oxygen compounds and ions, CO2, which may also exitPDC 100, and to produce C or Si or their compounds inPDC 100. -
Sintering aid compound 50 may have a linear CTE of 5×10−6/K or less, 3×10−6/K or less, or 2×10−6/K or less at 20°C. Non-sintering compound 70 may have a linear CTE of 5×10−6/K or less, 3×10−6/K or less, or 2×10−6/K or less at 20° C.Derivative compound 80 may have a linear CTE of 5×10−6/K or less, 3×10−6/K or less, or 2×10−6/K or less at 20° C. -
Sintering aid compound 50 may have a linear CTE of 8×10−6/K or less, 6×10−6/K or less, or 4×10−6/K or less at 20°C. Non-sintering compound 70 may have a linear CTE of 8×10−6/K or less, 6×10−6/K or less, or 4×10−6/K or less at 20° C.Derivative compound 80 may have a linear CTE of 8×10−6/K or less, 6×10−6/K or less, or 4×10−6/K or less at 20° C. - The disclosure further provides a method of forming a PDC, such as
PDC 100. According to the method,diamond grains 40 andsintering aid compound 50 are placed incan 20 as shown inFIG. 1 .Sintering aid compound 50 may be in the form of microparticles, which have a largest dimension on average of between 1 μm and 1000 μm.Sintering aid compound 50 may also be in the form of nanoparticles, which have a largest dimension on average of between 1 nm and 1000 nm. In particular, sinteringaid compound 50 may have a largest dimension of between 200 nm and 5 μm. In addition, sinteringaid compound 50 may be mono-disperse, with an average size variation in the largest dimension of 10% or less. -
Sintering aid compound 50 is mixed withdiamond grains 40, as shown inFIG. 1 . The mixing may be homogeneous orsintering aid compound 50 may be in higher proportions in some areas. The formation of a homogenous mixture may be facilitated by usingsintering aid compound 50 particles that are similar in dimension todiamond grains 40. For instance sintering aid particles to may have an average largest dimension within 5% of the average largest dimension ofdiamond grains 40. -
Sintering aid compound 50 may be formed into particles through mechanical processing, such as ball milling. Sintering aid compound may also be formed into discrete particles rather than clumps or agglomerates, with no more than 1% of particles physically attached to another particle. Discrete particles also facilitate the formation of a homogeneous mixture withdiamond grains 40. - During a HTHP process, some of
sintering aid compound 50 dissociates into dissociated sinteringaid 60, as shown inFIG. 2 .Dissociated sintering aid 60 is already located neardiamond grains 40. As a result, less sintering aid may be used than in conventional processes or HTHP press cycle time is reduced to increase productivity, in which the sintering aid typically must migrate from a substrate into the diamond grains. This is particularly true when sinteringaid compound 50 is in the form of particles homogeneously mixed withdiamond grains 40. The amount ofsintering aid compound 50 may be such that the total amount of the sintering aid component, such as Co, whether dissociated or in the compound, is less than 10 wt % of polycrystalline diamond table 90. It may also be less than 8 wt %, less than 4.5 wt %, less than 3 wt %, less than 2 wt %, or less than 1 wt %. - The temperature of the HTHP process is typically at least the eutectic temperature of the sintering aid component in
sintering aid compound 50 so that dispersedsintering aid 60 is in a liquid state. If dispersedsintering aid 60 is formed from an alloy, the temperature of the HTHP process may be at least the applicable alloying temperature, which is typically at least the eutectic temperature of the alloy component with the highest eutectic temperature. -
Non-sintering aid component 70 may also be formed during the HTHP process.Derivative compound 80 may be formed during HTHP process or after the process has been completed and polycrystalline diamond table 90 is cooled. - The entire process results in
PDC 100, as shown above inFIG. 3 . - A PDC as described herein may be incorporated into an industrial device, such as an earth-boring drill bit, as illustrated in
FIG. 4 .FIG. 4 illustrates a fixedcutter drill bit 200 containing a plurality ofcutters 210 coupled to drillbit body 220. At least one ofcutters 210 may be aPDC 100 as described inFIG. 3 . -
Bit body 220 may include a plurality ofblades 230 extending therefrom.Bit body 220 may be formed from steel, a steel alloy, a matrix material, or other suitable bit body material with desired strength, toughness and machinability.Bit body 220 may be formed to have desired wear and erosion properties.PDC cutters 210 may be mounted on the bit using methods of this disclosure or using other methods. PDC cutters may be located ingage region 240, or in a non-gage region, or both. - Drilling action associated with
drill bit 200 may occur asbit body 220 is rotated relative to the bottom of a wellbore in response to rotation of an associated drill string. At least somePDC cutters 210 disposed on associatedblades 230 may contact adjacent portions of a downhole formation during drilling. ThesePDC cutters 210 may be oriented such that their polycrystalline diamond tables contact the formation. - The present disclosure provides an embodiment A relating to a PDC including a substrate and a polycrystalline diamond table including a sintering aid compound, a dissociated non-sintering aid component, a derivative compound, or a mixture thereof and dissociated sintering aid.
- The present disclosure also provides an embodiment B relating to an earth-boring drill bit containing a bit body and the PDC of embodiment A in the form of a cutter.
- The present disclosure also provides an embodiment C relating to a method of forming a PDC including placing a substrate and a mixture of diamond grains and a sintering aid compound in a can to form a sintering assembly and performing an HTHP process on the sintering assembly to form a PDC including the substrate and a polycrystalline diamond table formed from the diamond grains and the sintering aid compound and including the sintering aid compound, a dissociated non-sintering aid component, a derivative compound, or a mixture thereof and further including dissociated sintering aid.
- In addition, embodiments A, B and C may be used in conjunction with the following additional elements, which may also be combined with one another unless clearly mutually exclusive, and which method elements may be used to obtain devices and which device elements may result from methods: i) the substrate may not include a sintering aid; ii) the sintering aid compound may include a sintering aid component M1 and a non-sintering aid component M2Q and have the general formula M1 xM2 yQp, wherein M1 is a Group VIII metal,
- M2 is a metal other than M1, Q is a non-metal, metalloid, or a combination of at least two non-metals or metalloids, x>0, y>0, p>0, and x, y and p are such that the sintering aid compound is electroneutral; iii) the derivative compound may be formed from the dissociated non-sintering aid component; iv) the derivative compound may be a metal carbide; v) each of the sintering aid compound, dissociated non-sintering aid component, and derivative compound may have a linear coefficient of thermal expansion (CTE) of 5×10−6/K or less; vi) the sintering aid compound may be in the form of particles; vii) the mixture of diamond grains and sintering aid compound may be homogeneous; viii) the sintering aid compound particles may have an average largest dimension within 5% of an average largest dimension of the diamond grains; ix) the sintering aid compound may dissociate into a sintering aid component and a non-sintering component during an HTHP process, such that the sintering aid component catalyzes the formation of diamond-diamond bonds between the diamond grains; x) the sintering aid compound may include at least two compounds; xi) each of the at least two compounds may include the same sintering aid; xii) each of the at least two compounds may include a different sintering aid and the sintering aids may form an alloy during the HTHP process; xiii) the dissociated non-sintering component may react with carbon to form a metal carbide derivative compound; xiv) the carbon may be from the diamond in the diamond grains.
- Although only exemplary embodiments of the invention are specifically described above, it will be appreciated that modifications and variations of these examples are possible without departing from the spirit and intended scope of the invention. For instance, the use of PDCs on other industrial devices may be determined by reference to the drill bit example.
Claims (20)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/US2016/058979 WO2018080490A1 (en) | 2016-10-27 | 2016-10-27 | Polycrystalline diamond compact with sintering aid compound, a compound formed from a sintering aid compound, or a mixture thereof |
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US20200139443A1 true US20200139443A1 (en) | 2020-05-07 |
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Family Applications (1)
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US16/335,792 Abandoned US20200139443A1 (en) | 2016-10-27 | 2016-10-27 | Polycrystalline diamond compact with sintering aid compound, a compound formed from a sintering aid compound, or a mixture thereof |
Country Status (5)
Country | Link |
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US (1) | US20200139443A1 (en) |
CN (1) | CN109890540A (en) |
CA (1) | CA3038035A1 (en) |
GB (1) | GB2568443A (en) |
WO (1) | WO2018080490A1 (en) |
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US8789627B1 (en) * | 2005-07-17 | 2014-07-29 | Us Synthetic Corporation | Polycrystalline diamond cutter with improved abrasion and impact resistance and method of making the same |
US8080071B1 (en) * | 2008-03-03 | 2011-12-20 | Us Synthetic Corporation | Polycrystalline diamond compact, methods of fabricating same, and applications therefor |
RU2539639C2 (en) * | 2009-01-16 | 2015-01-20 | Бейкер Хьюз Инкорпорейтед | Forming of cutting elements of polycrystalline diamond, cutting elements thus made and drill bit equipped with such cutting elements |
CN103261564A (en) * | 2010-07-14 | 2013-08-21 | 威达国际工业有限合伙公司 | Alloys with low coefficient of thermal expansion as pdc catalysts and binders |
US8771391B2 (en) * | 2011-02-22 | 2014-07-08 | Baker Hughes Incorporated | Methods of forming polycrystalline compacts |
-
2016
- 2016-10-27 CN CN201680089647.3A patent/CN109890540A/en not_active Withdrawn
- 2016-10-27 GB GB1903903.1A patent/GB2568443A/en not_active Withdrawn
- 2016-10-27 CA CA3038035A patent/CA3038035A1/en not_active Abandoned
- 2016-10-27 US US16/335,792 patent/US20200139443A1/en not_active Abandoned
- 2016-10-27 WO PCT/US2016/058979 patent/WO2018080490A1/en active Application Filing
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GB201903903D0 (en) | 2019-05-08 |
CA3038035A1 (en) | 2018-05-03 |
CN109890540A (en) | 2019-06-14 |
GB2568443A (en) | 2019-05-15 |
WO2018080490A1 (en) | 2018-05-03 |
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