US20200083668A1 - Guide transition device with digital grating deflectors and method - Google Patents
Guide transition device with digital grating deflectors and method Download PDFInfo
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4215—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H01S5/02—Structural details or components not essential to laser action
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- H01S5/0265—Intensity modulators
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12121—Laser
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
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- G02B2006/12133—Functions
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
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- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
Definitions
- This invention relates to guiding light from semiconductor lasers in layers of polymers on a semiconductor substrate and more particularly to transitioning light from one layer to another, using digital grating deflectors, to reduce optical cross-talk and other interference.
- Polymer modulators driven by semiconductor lasers are a popular apparatus for modulating a light beam.
- the modulator and laser are integrated on a common platform, such as an InP chip or substrate.
- One problem with including various light devices, such as light generating devices and light using devices, on a common plane or level is that light can couple between devices along unintended paths, such as through reflections or tunneling, to cause optical cross-talk and other interference. Further, light coupling between devices and between inputs and outputs can be inefficient with lost light traveling through the optical system to cause optical cross-talk and other interference.
- a guide transition device includes a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, and a light output port on a second plane different than the first plane.
- the light output port is designed to couple a received light beam to output equipment.
- the guide transition device further includes plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane.
- the plane shifting apparatus includes one or more digital gratings each designed to deflect the light beam approximately ninety degrees.
- the plane shifting apparatus is further coupled to transfer the light beam to the light output port on the second plane.
- a specific embodiment of a guide transition device comprises a platform including a semiconductor waveguide defining a light input port for receiving a light beam.
- the semiconductor laser is positioned on a first plane and a distal end of the semiconductor waveguide is formed with a digital grating.
- a planarizing layer deposited on the platform in abutting engagement with the distal end planarizes the first plane.
- a lower polymer cladding layer deposited on the semiconductor waveguide and the planarizing layer, a polymer core deposited on the lower polymer cladding layer, and an upper polymer cladding layer deposited on the core and lower polymer cladding layer form a polymer waveguide on a second plane different than the first plane with a first end defining a light output port. Portions of the lower polymer cladding layer, the core, and the upper polymer cladding layer are removed to form an angular deflection surface at an end of the polymer waveguide opposite the first end.
- the digital grating and the angular deflection surface have compatible angles so that a light beam directed into the light input port defined by the semiconductor waveguide on the first plane is deflected into the core of the polymer waveguide on the second plane.
- a specific method of fabricating a guide transition device includes the step of providing a platform including a semiconductor waveguide defining a light input port for receiving a light beam with the semiconductor laser positioned on a first plane.
- the method includes the steps of etching one end of the semiconductor waveguide to define a distal end and depositing a planarizing layer on the platform in abutting engagement with the distal end.
- the method further includes the steps of depositing a lower polymer cladding layer on the semiconductor waveguide and the planarizing layer, depositing a polymer core on the lower polymer cladding layer, and depositing an upper polymer cladding layer on the core and lower polymer cladding layer.
- the lower polymer cladding layer, the polymer core, and the upper polymer cladding layer form a polymer waveguide on a second plane different than the first plane with a first end defining a light output port.
- the method further includes the steps of removing portions of the lower polymer cladding layer, the core, and the upper polymer cladding layer to form an angular deflection surface at an end of the polymer waveguide opposite the first end.
- the digital grating and the angular deflection surface have compatible angles so that a light beam directed into the light input port defined by the semiconductor waveguide on the first plane is deflected into the core of the polymer waveguide on the second plane.
- FIG. 1 is a top view of a phase shift modulation layout with a single laser source divided into four inputs for four different modulators using a guide transition device (GTD) to couple the four inputs into four waveguides and then out to four fiber cables, according to the present invention
- GTD guide transition device
- FIG. 2 is a top view of a WDM (wavelength division multiplexing) layout with four different wavelength lasers coupled by four GTDs and then mux′d into one waveguide and out to a fiber cable, according to the present invention
- FIG. 3 is a cross-sectional view of an example of a narrow spot design for a guide transition device incorporating a grating deflector and an angular deflection surface in accordance with the present invention
- FIG. 4 is a cross-sectional view of an example of a narrow spot design for a guide transition device incorporating only grating deflectors in accordance with the present invention
- FIGS. 5A through 5H illustrate steps in the fabrication of the narrow spot design guide transition device of FIG. 3 in accordance with the present invention
- FIG. 6 is a cross-sectional view of an example of a large spot design for a guide transition device incorporating a grating deflector and an angular deflection surface in accordance with the present invention
- FIG. 7 is a top view of the guide transition device illustrated in FIG. 6 ;
- FIG. 8 is a top view of the guide transition device illustrated in FIG. 6 , showing a Mach-Zehnder modulator implemented between taper regions, according to the present invention.
- FIG. 9 illustrates a first step in the fabrication of the large spot design guide transition device of FIG. 6 , in accordance with the present invention.
- a primary object of the present invention is to provide a new and improved guide transition device fabricated in light guiding apparatus including a substrate and multiple polymer layers.
- the guide transition device is designed to efficiently couple light from one layer or plane of the light guiding apparatus to another layer or plane of the light guiding apparatus to reduce optical cross-talk and other interference.
- the light guiding apparatus includes a light input port coupled to receive light from a light source, such as a semiconductor laser or waveguides fabricated to guide light from a laser, positioned on a first plane, plane shifting apparatus, including a digital grating coupled to receive the light from the light input port and to shift or transfer the light to another or second layer or plane having either a second digital grating or an angular deflection surface, above or below the first layer or plane, and a light output port on the second layer or plane coupled to the plane shifting apparatus and designed to couple light from the plane shifting apparatus to some type of output equipment, such as an optical fiber, waveguide, etc.
- the plane shifting apparatus can be, for example, a combination of a digital grating and an angular deflection surface or only digital gratings, explained in more detail below.
- a “digital grating” is a grating that receives light from a source and reflects/transmits the light in a well-known manner. Each grating is designed to improve either the reflection or transmission of the light in accordance with the specific application to which it is applied.
- the design can be castellated, sinewave, or a combination of both.
- the grating can be stepped in a castellated format, typically referred to as a multi-level grating.
- each digital grating is specifically designed to deflect a received light beam approximately (i.e. +/ ⁇ 10 degrees) 90 degrees.
- guide transition device 12 receives light from a source 14 , such as a semiconductor laser, on a first level and shifts or transfers the light to a second level.
- a source 14 such as a semiconductor laser
- On the second level guide transition device 12 couples the light to a first waveguide 15 that is split into two waveguides using a splitter with each of the two waveguides being split for a total of four waveguides.
- Each of the four waveguides is then coupled to or passes through a modulator 16 , 17 , 18 , and 19 , respectively, and extends to the edge of the chip ready to launch the phase modulated light into fiber optics or the like.
- Modulators 16 , 17 , 18 , and 19 can alternatively be intensity modulators, for example, a Mach-Zehnder modulator, a directional-coupler modulator, polarization modulator, etc.
- intensity modulators for example, a Mach-Zehnder modulator, a directional-coupler modulator, polarization modulator, etc.
- modulator is generic and includes all of the above listed modulators.
- WDM wavelength division multiplexing
- guide transition device 22 couples light from a light source 27 to a polymer waveguide and modulator 28 on a second, different level
- guide transition device 23 couples light from a light source 29 to a polymer waveguide and modulator 30 on a second, different level
- guide transition device 24 couples light from a light source 31 to a polymer waveguide and modulator 32 on a second, different level.
- Light from polymer waveguides and modulators 26 , 28 , 30 , and 32 is coupled to a multiplexer 34 where the four inputs are multiplexed down to a single output fiber 35 .
- Examples of devices that can be used for multiplexer 34 include a multimode modulator interferometer (MMI), thin film filters, Eschelle gratings, arrayed waveguide gratings (AWG), or the like.
- MMI multimode modulator interferometer
- WAG arrayed waveguide gratings
- Modulators 26 , 28 , 30 , and 32 can be phase, polarization, or intensity modulators (see above).
- phase shift modulation apparatus 10 a single light source is coupled through a single guide transition device into four fibers and four modulators to produce four different phase (or intensity) signals.
- WDM apparatus 20 four lasers operating at four different wavelengths, couple via four guide transition devices into four modulators/waveguides that are muxed into a single output fiber.
- the guide transition devices shift or transfer the light from the level or plane in which the light source lies, to another plane or level containing waveguides and modulators to essentially separate or insulate the waveguides and modulators from any stray light produced by the light source.
- a guide transition device 40 is provided as an example of a guide transition device that could be used in either of phase shift modulation apparatus 10 or WDM apparatus 20 or any other light guiding apparatus.
- a monolithic semiconductor laser 42 and a polymer waveguide modulator 44 are included in device 40 and fabricated on a substrate 41 , which in this preferred embodiment is monolithic InP but can be other semiconductors or metals, such as silicon, silicon carbide, GaN, GaAs, InSb, metals, sapphire, etc.
- Monolithic laser 42 can be a distributed feedback (DFB) laser, a Fabry-Perot (FB) laser, a distributed Bragg reflector (DBR) laser, a tunable laser, VCSEL (Vertical Cavity Surface Emitting Laser) or any other type of semiconductor laser.
- Laser 42 includes an output semiconductor waveguide 43 (with a core 43 a ) which has a digital grating 46 formed therein adjacent a distal end 47 .
- the portion of output semiconductor waveguide 43 receiving a light beam from laser 42 can be considered a “light input port”.
- Digital grating 46 is specifically designed to turn light from source/laser 42 vertically upwardly.
- the epi material is removed from substrate 41 beyond end 47 to minimize the problems of trying to deposit polymers in a trench-like structure.
- a lower polymer layer 48 is deposited on substrate 41 to planarize substrate 41 beyond end 47 .
- an insulating oxide or nitride could be deposited on substrate 41 to planarize substrate 41 .
- a relatively thick lower cladding layer 49 is deposited on the upper surfaces of laser 42 and lower polymer layer 48 , a core polymer is deposited on the upper surface of lower cladding layer 49 and etched to form a waveguide core 50 , and an upper polymer cladding layer 51 is deposited around waveguide core 50 to form a polymer waveguide 52 .
- an anti-reflective (AR) coating 54 is deposited on the upper surface of output semiconductor waveguide 43 prior to depositing lower cladding layer 49 to reduce or remove any reflections at the abutting surfaces.
- AR coating can be completed via dielectric deposition using CVD, PECVD, sputtering, ebeam, etc.
- Materials for the dielectric coating can be, for example, oxides, nitrides, and combinations thereof deposited with a thickness for anti-reflection properties. Also, a relatively thick lower cladding layer 49 is deposited to minimize light leakage from polymer core 50 to substrate 41 .
- lower cladding layer 49 , core 50 , and upper polymer cladding layer 51 are etched at an angle and through to the upper surface of output semiconductor waveguide 43 to form an angular deflection surface 56 .
- digital grating 46 and angular deflection surface 56 are included in the plane shifting apparatus that shifts light from the laser source 42 on one plane to waveguide 52 and a light output surface or port 53 on a different plane.
- the angle of surface 56 is selected/formed to be compatible with the amount digital grating 46 is designed to turn or deflect light, resulting in high optical coupling into waveguide 52 .
- digital grating 46 deflects the received light beam at an angle of approximately 90 degrees (plus or minus 10 degrees) and deflection surface 56 is compatible to deflect the received light beam into waveguide core 50 parallel to the second plane.
- a high reflective coating 57 can be deposited on the outer surface of angular deflection surface 56 .
- polymer waveguide modulator 44 is formed in waveguide 52 between angular deflection surface 56 and taper 58 of core 50 .
- Modulator 44 can be for example, a Mach-Zehnder modulator, an intensity or phase modulator, etc.
- a typical semiconductor laser will put-out a spot (beam area) with 35 degrees vertical divergence and 15 degrees horizontal divergence which means the laser beam diverges hugely.
- the laser beam is coupled into waveguide 52 which keeps the beam from diverging any more.
- the dimensions of waveguide 52 are relatively tiny. Waveguide 52 will couple the spot (reflected laser beam) into the small dimensions of waveguide 52 and for guide transition device 40 to operate better between the planes or levels, there must be as much alignment tolerance (e.g. at the output of waveguide 52 ) as possible.
- a guide transition device 40 ′ is provided as another example of a guide transition device that could be used in either of phase shift modulation apparatus 10 or WDM apparatus 20 or any other light guiding apparatus.
- Guide transition device 40 ′ incorporates only grating deflectors and does not include any angular deflection surface in accordance with the present invention.
- Components of guide transition device 40 ′ that are the same as components of guide transition device 40 of FIG. 3 are designated with a similar number and a prime (′) is added to indicate the different embodiment.
- Guide transition device 40 ′ is similar in all respects to guide transition device 40 , except that angular deflection surface 56 and high reflective coating 57 are replaced with a second digital grating 55 ′.
- Second digital grating 55 ′ is formed in core 50 ′ directly above anti-reflective (AR) coating 54 ′ on the upper surface of output semiconductor waveguide 43 ′ and first digital grating 46 ′. Second digital grating 55 ′ deflects the received light beam at an angle of approximately 90 degrees (plus or minus 10 degrees) into core 50 ′ and towards output surface 53 ′. It will be understood that the angle of deflection of digital grating 55 ′ is selected/formed to be compatible with the amount digital grating 46 is designed to turn or deflect light, resulting in high optical coupling into waveguide 52 ′.
- AR anti-reflective
- forming one or more of the digital gratings may be easier and more efficient than forming the angular deflection surfaces.
- forming digital grating 46 ′ in core 43 a ′ may, at least in some instances, be simpler than forming the negative slanted angular deflection surface 46 which it replaces and which is provided and explained in the above described copending patent application.
- monolithic semiconductor laser 42 is fabricated on substrate 41 , which in this preferred embodiment is InP but may be any semiconductor or metal material.
- Monolithic laser 42 can be a distributed feedback (DFB) laser, a Fabry-Perot (FB) laser, a distributed Bragg reflector (DBR) laser, a tunable laser, VCSEL (Vertical Cavity Surface Emitting Laser) or any other type of semiconductor laser.
- DFB distributed feedback
- FB Fabry-Perot
- DBR distributed Bragg reflector
- VCSEL Very Cavity Surface Emitting Laser
- Laser 42 includes an output waveguide 43 (with a core 43 a ) which is vertically etched to form end 47 and most of the epi material is removed from substrate 41 beyond end 47 to minimize the problems of trying to deposit polymers in a trench-like structure.
- core 43 a is deposited on a lower cladding layer 43 b and grating 46 is formed in core 43 a during deposition/etching of core 43 a .
- An upper cladding layer 43 c is deposited over and around core 43 a to complete waveguide 43 .
- Anti-reflective (AR) coating 54 (if included) is then deposited on the upper surface of output semiconductor waveguide 43 .
- AR Anti-reflective
- lower polymer layer 48 is deposited on substrate 41 to planarize substrate 41 and to mate with surface 47 .
- lower polymer layer 48 is a spin-on coat or it could be deposited by CVD. After deposition lower polymer layer 48 is etched back using an oxygen based process to planarize lower polymer layer 48 .
- lower cladding layer 49 is deposited on the upper surfaces of laser 42 and lower polymer layer 48 .
- lower cladding layer 49 is a spin-on coat or it could be deposited by CVD.
- After deposition lower cladding layer 49 is etched back using an oxygen based process to planarize lower cladding layer 49 and achieve a desired thickness.
- photolithography masking and etching are used to define 2-dimensional taper 58 in the upper surface of lower cladding layer 49 , as illustrated in FIG. 5D .
- a layer of polymer material is deposited on the upper surface of lower cladding layer 49 and shaped into waveguide core 50 , including 2-dimensional taper 58 , using photolithography masking and etching.
- upper cladding layer 51 is deposited on lower cladding layer 49 and surrounding core 50 .
- upper cladding layer 51 is deposited using spin-on deposition techniques and the conformity with core 50 planarizes waveguide 52 .
- lower cladding layer 49 , core 50 , and upper polymer cladding layer 51 are etched at an angle and through to the upper surface of laser 42 to form an angular deflection surface 56 .
- the angle of surface 56 is selected to be compatible with the deflection angle of grating 46 , resulting in high optical coupling into waveguide 52 .
- an HR (high reflectivity) reflector 57 is deposited on the outer surface of angular deflection surface 56 , as illustrated in FIG. 5H .
- HR reflector 57 can be, for example, an HR coating, dielectric material, metallic, or combinations thereof.
- Metallic electrodes, designated 60 in FIG. 5H are added for electrical connections to modulator 44 .
- a guide transition device 100 is provided as an example of a guide transition device that could be used in either of phase shift modulation apparatus 10 or WDM apparatus 20 or any other light guiding apparatus.
- a monolithic semiconductor laser 102 and a polymer waveguide modulator 104 are included in device 100 and fabricated on a substrate 101 , which in this preferred embodiment is monolithic InP but can be other semiconductors or metals, such as silicon, silicon carbide, GaN, GaAs, InP, metals, sapphire, etc.
- Monolithic laser 102 can be a distributed feedback (DFB) laser, a Fabry-Perot (FB) laser, a distributed Bragg reflector (DBR) laser, a tunable laser, VCSEL (Vertical Cavity Surface Emitting Laser) or any other type of semiconductor laser.
- Laser 102 includes an output semiconductor waveguide 103 (with a core 103 a , a lower cladding layer 103 b and an upper cladding layer 103 c ) which is etched to form a substantially vertical end surface 106 and most of the epi material is removed from substrate 101 beyond surface 106 to minimize the problems of trying to deposit polymers in a trench-like structure.
- a portion adjacent surface 106 is reduced to a taper 120 , which produces a large spot size.
- a digital grating 121 is formed in the taper 120 which is designed to deflect light from laser 102 upwardly approximately 90 degrees.
- lower cladding layer 103 b is deposited and etched to form the lower side of taper 120
- core 103 a is deposited and etched to complete taper 120 and form digital grating 121
- upper cladding layer 103 c is deposited to enclose taper 120 and digital grating 121 and etched to provide an upper planar surface.
- a lower polymer layer 108 is deposited on substrate 101 to planarize substrate 101 .
- an insulating oxide or nitride could be deposited on substrate 101 to planarize substrate 101 .
- a relatively thick lower cladding layer 109 is deposited on the upper surfaces of output semiconductor waveguide 103 and lower polymer layer 108 , a core polymer is deposited on the upper surface of lower cladding layer 109 and etched to form a waveguide core 110 , and an upper polymer cladding layer 111 is deposited around waveguide core 110 to form a polymer waveguide 112 .
- an anti-reflective (AR) coating 105 on the upper surface of output semiconductor waveguide 103 prior to depositing a lower cladding layer 109 to reduce or remove any reflections at the abutting surfaces.
- the AR coating can be completed via dielectric deposition using CVD, PECVD, sputtering, ebeam, etc.
- Materials for the dielectric coating can be, for example, oxides, nitrides, and combinations thereof deposited with a thickness for anti-reflection properties. Also, a relatively thick lower cladding layer 109 is deposited to minimize light leakage from polymer core 110 to substrate 101 .
- Lower cladding layer 109 , core 110 , and upper polymer cladding layer 111 are etched at an angle and through to the upper surface of output semiconductor waveguide 103 to form an angular deflection surface 116 .
- digital grating 121 and angular deflection surface 116 are included in the plane shifting apparatus that shifts light from the laser source on one plane to waveguide 112 and the light output on a different plane.
- the angle of surface 116 is selected to be compatible with the deflection angle of digital grating 121 , resulting in high optical coupling into waveguide 112 .
- a high reflective coating 117 can be deposited on the outer surface of angular deflection surface 116 .
- guide transition device 100 For guide transition device 100 to operate most efficiently between the planes or levels and to make the alignment of guide transition device 100 easier and more manufacturable, there must be as much alignment tolerance as possible between the layers or planes. Better alignment tolerance is achieved in guide transition device 100 by reducing core 103 a of laser output waveguide 103 to a taper 120 adjacent surface 106 , which produces a large spot size, supplied to digital grating 121 and, thus, to angular deflection surface 116 . The large spot size deflected by digital grating 121 onto angular deflection surface 116 at the input of waveguide 112 makes the alignment of guide transition device 100 easier and more manufacturable.
- waveguide core 110 includes a taper 124 in which the dimensions of core 110 are reduced as core 110 progresses from a midpoint to adjacent angular deflection surface 116 .
- Taper 124 in conjunction with the large spot size deflected onto angular deflection surface 116 , substantially increases alignment tolerance between the planes.
- better alignment tolerance is achieved in guide transition device 100 by reducing core 110 of waveguide 112 to a taper 126 adjacent the output, which produces a large spot size, represented by broken lines 128 , at the output edge of waveguide 112 for coupling into external equipment, such as fibers or the like.
- polymer waveguide modulator 104 is formed in waveguide 112 between taper 124 and taper 126 of core 110 .
- Modulator 104 can be for example, a Mach-Zehnder modulator, an intensity, polarization, or phase modulator, etc.
- a top plan view of guide transition device 100 is provided to illustrate the horizontal tapers of cores 103 a and 124 .
- modulator 104 is an intensity, polarization, or phase modulator, etc.
- a top plan view of guide transition device 100 is provided to illustrate the incorporation of a Mach-Zehnder modulator as modulator 104 .
- core tapers 124 and 126 are designed much smaller to accommodate the Mach-Zehnder interferometer.
- the purpose of the examples illustrated in FIGS. 7 and 8 are to illustrate specifically how various modulators can be incorporated into a guide transition device in accordance with the present invention.
- FIG. 9 an initial sequential step in a preferred process for fabricating guide transition device 100 , is illustrated.
- anti-reflective (AR) coating 105 can be deposited on the upper surface of output semiconductor waveguide 103 prior to depositing lower cladding layer 109 .
- the remaining steps for the fabrication of guide transition device 100 are basically the same as the steps illustrated and explained in and with reference to FIGS. 5B through 5H above.
- a new and improved guide transition device for efficiently coupling light between devices and to output apparatus.
- the new and improved guide transition device is specifically designed with one or more digital gratings to improve and/or simplify fabrication of guide transition devices.
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Abstract
Description
- This invention relates to guiding light from semiconductor lasers in layers of polymers on a semiconductor substrate and more particularly to transitioning light from one layer to another, using digital grating deflectors, to reduce optical cross-talk and other interference.
- Polymer modulators driven by semiconductor lasers are a popular apparatus for modulating a light beam. In a copending application entitled “Polymer Modulator and Laser Integrated on a Common Platform and Method”, filed Aug. 31, 2017, with application Ser. No. 15/692,080, and incorporated herein by reference, the modulator and laser are integrated on a common platform, such as an InP chip or substrate.
- One problem with including various light devices, such as light generating devices and light using devices, on a common plane or level is that light can couple between devices along unintended paths, such as through reflections or tunneling, to cause optical cross-talk and other interference. Further, light coupling between devices and between inputs and outputs can be inefficient with lost light traveling through the optical system to cause optical cross-talk and other interference.
- In a copending patent application, entitled “Guide Transition Device and Method”, filed Sep. 14, 2017, Ser. No. 15/704,739 and incorporated herein by reference, light generated by a source, such as a laser, is deflected between planes by plane shifting apparatus including angular deflection surfaces. In some applications, angular surfaces may be difficult or inconvenient to fabricate and use.
- It would be highly advantageous, therefore, to remedy the foregoing and other deficiencies inherent in the prior art.
- Accordingly, it is an object of the present invention to provide a new and improved guide transition device for efficiently coupling light between devices and to output apparatus.
- It is another object of the present invention to provide a new and improved guide transition device for coupling light from one plane to another plane using digital grating deflectors.
- Briefly to achieve the desired objects and advantages of the instant invention in accordance with a preferred embodiment a guide transition device is provided that includes a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, and a light output port on a second plane different than the first plane. The light output port is designed to couple a received light beam to output equipment. The guide transition device further includes plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus includes one or more digital gratings each designed to deflect the light beam approximately ninety degrees. The plane shifting apparatus is further coupled to transfer the light beam to the light output port on the second plane.
- To further achieve the desired objects and advantages of the present invention a specific embodiment of a guide transition device comprises a platform including a semiconductor waveguide defining a light input port for receiving a light beam. The semiconductor laser is positioned on a first plane and a distal end of the semiconductor waveguide is formed with a digital grating. A planarizing layer deposited on the platform in abutting engagement with the distal end planarizes the first plane. A lower polymer cladding layer deposited on the semiconductor waveguide and the planarizing layer, a polymer core deposited on the lower polymer cladding layer, and an upper polymer cladding layer deposited on the core and lower polymer cladding layer form a polymer waveguide on a second plane different than the first plane with a first end defining a light output port. Portions of the lower polymer cladding layer, the core, and the upper polymer cladding layer are removed to form an angular deflection surface at an end of the polymer waveguide opposite the first end. The digital grating and the angular deflection surface have compatible angles so that a light beam directed into the light input port defined by the semiconductor waveguide on the first plane is deflected into the core of the polymer waveguide on the second plane.
- To further achieve the desired objects and advantages of the present invention a specific method of fabricating a guide transition device includes the step of providing a platform including a semiconductor waveguide defining a light input port for receiving a light beam with the semiconductor laser positioned on a first plane. The method includes the steps of etching one end of the semiconductor waveguide to define a distal end and depositing a planarizing layer on the platform in abutting engagement with the distal end. The method further includes the steps of depositing a lower polymer cladding layer on the semiconductor waveguide and the planarizing layer, depositing a polymer core on the lower polymer cladding layer, and depositing an upper polymer cladding layer on the core and lower polymer cladding layer. The lower polymer cladding layer, the polymer core, and the upper polymer cladding layer form a polymer waveguide on a second plane different than the first plane with a first end defining a light output port. The method further includes the steps of removing portions of the lower polymer cladding layer, the core, and the upper polymer cladding layer to form an angular deflection surface at an end of the polymer waveguide opposite the first end. The digital grating and the angular deflection surface have compatible angles so that a light beam directed into the light input port defined by the semiconductor waveguide on the first plane is deflected into the core of the polymer waveguide on the second plane.
- Specific objects and advantages of the invention will become readily apparent to those skilled in the art from the following detailed description of a preferred embodiment thereof, taken in conjunction with the drawings in which:
-
FIG. 1 is a top view of a phase shift modulation layout with a single laser source divided into four inputs for four different modulators using a guide transition device (GTD) to couple the four inputs into four waveguides and then out to four fiber cables, according to the present invention; -
FIG. 2 is a top view of a WDM (wavelength division multiplexing) layout with four different wavelength lasers coupled by four GTDs and then mux′d into one waveguide and out to a fiber cable, according to the present invention; -
FIG. 3 is a cross-sectional view of an example of a narrow spot design for a guide transition device incorporating a grating deflector and an angular deflection surface in accordance with the present invention; -
FIG. 4 is a cross-sectional view of an example of a narrow spot design for a guide transition device incorporating only grating deflectors in accordance with the present invention; -
FIGS. 5A through 5H illustrate steps in the fabrication of the narrow spot design guide transition device ofFIG. 3 in accordance with the present invention; -
FIG. 6 is a cross-sectional view of an example of a large spot design for a guide transition device incorporating a grating deflector and an angular deflection surface in accordance with the present invention; -
FIG. 7 is a top view of the guide transition device illustrated inFIG. 6 ; -
FIG. 8 is a top view of the guide transition device illustrated inFIG. 6 , showing a Mach-Zehnder modulator implemented between taper regions, according to the present invention; and -
FIG. 9 illustrates a first step in the fabrication of the large spot design guide transition device ofFIG. 6 , in accordance with the present invention. - A primary object of the present invention is to provide a new and improved guide transition device fabricated in light guiding apparatus including a substrate and multiple polymer layers. The guide transition device is designed to efficiently couple light from one layer or plane of the light guiding apparatus to another layer or plane of the light guiding apparatus to reduce optical cross-talk and other interference. In the preferred embodiment, the light guiding apparatus includes a light input port coupled to receive light from a light source, such as a semiconductor laser or waveguides fabricated to guide light from a laser, positioned on a first plane, plane shifting apparatus, including a digital grating coupled to receive the light from the light input port and to shift or transfer the light to another or second layer or plane having either a second digital grating or an angular deflection surface, above or below the first layer or plane, and a light output port on the second layer or plane coupled to the plane shifting apparatus and designed to couple light from the plane shifting apparatus to some type of output equipment, such as an optical fiber, waveguide, etc. The plane shifting apparatus can be, for example, a combination of a digital grating and an angular deflection surface or only digital gratings, explained in more detail below.
- In this explanation a “digital grating” is a grating that receives light from a source and reflects/transmits the light in a well-known manner. Each grating is designed to improve either the reflection or transmission of the light in accordance with the specific application to which it is applied. The design can be castellated, sinewave, or a combination of both. The grating can be stepped in a castellated format, typically referred to as a multi-level grating. In the present invention, each digital grating is specifically designed to deflect a received light beam approximately (i.e. +/−10 degrees) 90 degrees.
- Turning to
FIG. 1 , an example of phase shift modulation apparatus 10 incorporating aguide transition device 12, in accordance with the present invention, is illustrated. In this example,guide transition device 12 receives light from asource 14, such as a semiconductor laser, on a first level and shifts or transfers the light to a second level. On the second levelguide transition device 12 couples the light to afirst waveguide 15 that is split into two waveguides using a splitter with each of the two waveguides being split for a total of four waveguides. Each of the four waveguides is then coupled to or passes through amodulator Modulators - Turning to
FIG. 2 , an example of wavelength division multiplexing (WDM)apparatus 20 incorporating fourguide transition devices Guide transition device 21 couples light from alight source 25, such as a semiconductor laser, on a first level, to a polymer waveguide andmodulator 26 on a second, different level. Similarly,guide transition device 22 couples light from alight source 27 to a polymer waveguide andmodulator 28 on a second, different level, guide transition device 23 couples light from alight source 29 to a polymer waveguide andmodulator 30 on a second, different level, andguide transition device 24 couples light from alight source 31 to a polymer waveguide andmodulator 32 on a second, different level. Light from polymer waveguides andmodulators multiplexer 34 where the four inputs are multiplexed down to asingle output fiber 35. Examples of devices that can be used formultiplexer 34 include a multimode modulator interferometer (MMI), thin film filters, Eschelle gratings, arrayed waveguide gratings (AWG), or the like.Modulators - Thus, in phase shift modulation apparatus 10 a single light source is coupled through a single guide transition device into four fibers and four modulators to produce four different phase (or intensity) signals. In
WDM apparatus 20, four lasers operating at four different wavelengths, couple via four guide transition devices into four modulators/waveguides that are muxed into a single output fiber. In all instances the guide transition devices shift or transfer the light from the level or plane in which the light source lies, to another plane or level containing waveguides and modulators to essentially separate or insulate the waveguides and modulators from any stray light produced by the light source. - Referring now to
FIG. 3 , aguide transition device 40 is provided as an example of a guide transition device that could be used in either of phase shift modulation apparatus 10 orWDM apparatus 20 or any other light guiding apparatus. In this specific example, amonolithic semiconductor laser 42 and apolymer waveguide modulator 44 are included indevice 40 and fabricated on asubstrate 41, which in this preferred embodiment is monolithic InP but can be other semiconductors or metals, such as silicon, silicon carbide, GaN, GaAs, InSb, metals, sapphire, etc.Monolithic laser 42 can be a distributed feedback (DFB) laser, a Fabry-Perot (FB) laser, a distributed Bragg reflector (DBR) laser, a tunable laser, VCSEL (Vertical Cavity Surface Emitting Laser) or any other type of semiconductor laser.Laser 42 includes an output semiconductor waveguide 43 (with a core 43 a) which has adigital grating 46 formed therein adjacent adistal end 47. For purposes of this disclosure, the portion ofoutput semiconductor waveguide 43 receiving a light beam fromlaser 42 can be considered a “light input port”. Digital grating 46 is specifically designed to turn light from source/laser 42 vertically upwardly. The epi material is removed fromsubstrate 41 beyondend 47 to minimize the problems of trying to deposit polymers in a trench-like structure. Alower polymer layer 48 is deposited onsubstrate 41 toplanarize substrate 41 beyondend 47. Alternatively, an insulating oxide or nitride could be deposited onsubstrate 41 toplanarize substrate 41. These techniques are also compatible with use of a lower electrode to enable vertical poling in the polymer waveguide. - A relatively thick
lower cladding layer 49 is deposited on the upper surfaces oflaser 42 andlower polymer layer 48, a core polymer is deposited on the upper surface oflower cladding layer 49 and etched to form awaveguide core 50, and an upperpolymer cladding layer 51 is deposited aroundwaveguide core 50 to form apolymer waveguide 52. In some instances it may be desirable to deposit an anti-reflective (AR) coating 54 on the upper surface ofoutput semiconductor waveguide 43 prior to depositinglower cladding layer 49 to reduce or remove any reflections at the abutting surfaces. Usually the AR coating can be completed via dielectric deposition using CVD, PECVD, sputtering, ebeam, etc. Materials for the dielectric coating can be, for example, oxides, nitrides, and combinations thereof deposited with a thickness for anti-reflection properties. Also, a relatively thicklower cladding layer 49 is deposited to minimize light leakage frompolymer core 50 tosubstrate 41. - In this specific example,
lower cladding layer 49,core 50, and upper polymer cladding layer 51 (i.e. polymer waveguide 52) are etched at an angle and through to the upper surface ofoutput semiconductor waveguide 43 to form anangular deflection surface 56. In this example,digital grating 46 andangular deflection surface 56 are included in the plane shifting apparatus that shifts light from thelaser source 42 on one plane to waveguide 52 and a light output surface orport 53 on a different plane. The angle ofsurface 56 is selected/formed to be compatible with the amountdigital grating 46 is designed to turn or deflect light, resulting in high optical coupling intowaveguide 52. In this preferred embodiment,digital grating 46 deflects the received light beam at an angle of approximately 90 degrees (plus or minus 10 degrees) and deflection surface 56 is compatible to deflect the received light beam intowaveguide core 50 parallel to the second plane. To further enhance reflection atangular deflection surface 56, a highreflective coating 57 can be deposited on the outer surface ofangular deflection surface 56. In this specific example,polymer waveguide modulator 44 is formed inwaveguide 52 betweenangular deflection surface 56 and taper 58 ofcore 50.Modulator 44 can be for example, a Mach-Zehnder modulator, an intensity or phase modulator, etc. - A typical semiconductor laser will put-out a spot (beam area) with 35 degrees vertical divergence and 15 degrees horizontal divergence which means the laser beam diverges hugely. As explained, in the
guide transition device 40 the laser beam is coupled intowaveguide 52 which keeps the beam from diverging any more. Unfortunately, the dimensions ofwaveguide 52 are relatively tiny.Waveguide 52 will couple the spot (reflected laser beam) into the small dimensions ofwaveguide 52 and forguide transition device 40 to operate better between the planes or levels, there must be as much alignment tolerance (e.g. at the output of waveguide 52) as possible. Better alignment tolerance is achieved inguide transition device 40 by reducingcore 50 ofwaveguide 52 to ataper 58 adjacent the output, which produces a large spot size, represented bybroken lines 59, at the output edge ofwaveguide 52 for coupling into external equipment, such as fibers or the like. Thelarge spot size 59 at the output makes the alignment ofguide transition device 40 with exterior equipment easier and more manufacturable. - Referring additionally to
FIG. 4 , aguide transition device 40′ is provided as another example of a guide transition device that could be used in either of phase shift modulation apparatus 10 orWDM apparatus 20 or any other light guiding apparatus.Guide transition device 40′ incorporates only grating deflectors and does not include any angular deflection surface in accordance with the present invention. Components ofguide transition device 40′ that are the same as components ofguide transition device 40 ofFIG. 3 are designated with a similar number and a prime (′) is added to indicate the different embodiment.Guide transition device 40′ is similar in all respects to guidetransition device 40, except thatangular deflection surface 56 and highreflective coating 57 are replaced with a second digital grating 55′. Second digital grating 55′ is formed incore 50′ directly above anti-reflective (AR) coating 54′ on the upper surface ofoutput semiconductor waveguide 43′ and first digital grating 46′. Second digital grating 55′ deflects the received light beam at an angle of approximately 90 degrees (plus or minus 10 degrees) intocore 50′ and towardsoutput surface 53′. It will be understood that the angle of deflection ofdigital grating 55′ is selected/formed to be compatible with the amountdigital grating 46 is designed to turn or deflect light, resulting in high optical coupling intowaveguide 52′. - Here it should be understood that in many situations forming one or more of the digital gratings may be easier and more efficient than forming the angular deflection surfaces. For example, forming
digital grating 46′ incore 43 a′ may, at least in some instances, be simpler than forming the negative slantedangular deflection surface 46 which it replaces and which is provided and explained in the above described copending patent application. - Referring now to
FIGS. 5A through 5 h, some sequential steps in a preferred process for fabricatingguide transition device 40 are illustrated. For convenience of understanding, the same numbers used inFIG. 3 will be used inFIGS. 5A through 5 h to designate the same components. Referring specifically toFIG. 5A ,monolithic semiconductor laser 42 is fabricated onsubstrate 41, which in this preferred embodiment is InP but may be any semiconductor or metal material.Monolithic laser 42 can be a distributed feedback (DFB) laser, a Fabry-Perot (FB) laser, a distributed Bragg reflector (DBR) laser, a tunable laser, VCSEL (Vertical Cavity Surface Emitting Laser) or any other type of semiconductor laser.Laser 42 includes an output waveguide 43 (with a core 43 a) which is vertically etched to formend 47 and most of the epi material is removed fromsubstrate 41 beyondend 47 to minimize the problems of trying to deposit polymers in a trench-like structure. During the formation ofoutput waveguide 43,core 43 a is deposited on alower cladding layer 43 b and grating 46 is formed incore 43 a during deposition/etching ofcore 43 a. Anupper cladding layer 43 c is deposited over and aroundcore 43 a to completewaveguide 43. Anti-reflective (AR) coating 54 (if included) is then deposited on the upper surface ofoutput semiconductor waveguide 43. - Referring additionally to
FIG. 5B ,lower polymer layer 48 is deposited onsubstrate 41 toplanarize substrate 41 and to mate withsurface 47. In this preferred embodimentlower polymer layer 48 is a spin-on coat or it could be deposited by CVD. After depositionlower polymer layer 48 is etched back using an oxygen based process to planarizelower polymer layer 48. - Referring additionally to
FIG. 5C , a relatively thicklower cladding layer 49 is deposited on the upper surfaces oflaser 42 andlower polymer layer 48. In this preferred embodimentlower cladding layer 49 is a spin-on coat or it could be deposited by CVD. After depositionlower cladding layer 49 is etched back using an oxygen based process to planarizelower cladding layer 49 and achieve a desired thickness. To reducecore 50 ofwaveguide 52 to taper 58 adjacent the output, photolithography masking and etching are used to define 2-dimensional taper 58 in the upper surface oflower cladding layer 49, as illustrated inFIG. 5D . - Referring additionally to
FIG. 5E , a layer of polymer material is deposited on the upper surface oflower cladding layer 49 and shaped intowaveguide core 50, including 2-dimensional taper 58, using photolithography masking and etching. Referring additionally toFIG. 5F ,upper cladding layer 51 is deposited onlower cladding layer 49 and surroundingcore 50. In this preferred embodimentupper cladding layer 51 is deposited using spin-on deposition techniques and the conformity withcore 50planarizes waveguide 52. - Turning to
FIG. 5G ,lower cladding layer 49,core 50, and upper polymer cladding layer 51 (i.e. polymer waveguide 52) are etched at an angle and through to the upper surface oflaser 42 to form anangular deflection surface 56. The angle ofsurface 56 is selected to be compatible with the deflection angle of grating 46, resulting in high optical coupling intowaveguide 52. Preferably, an HR (high reflectivity)reflector 57 is deposited on the outer surface ofangular deflection surface 56, as illustrated inFIG. 5H .HR reflector 57 can be, for example, an HR coating, dielectric material, metallic, or combinations thereof. Metallic electrodes, designated 60 inFIG. 5H , are added for electrical connections tomodulator 44. - Referring now to
FIG. 6 , aguide transition device 100 is provided as an example of a guide transition device that could be used in either of phase shift modulation apparatus 10 orWDM apparatus 20 or any other light guiding apparatus. In this specific example, amonolithic semiconductor laser 102 and apolymer waveguide modulator 104 are included indevice 100 and fabricated on asubstrate 101, which in this preferred embodiment is monolithic InP but can be other semiconductors or metals, such as silicon, silicon carbide, GaN, GaAs, InP, metals, sapphire, etc.Monolithic laser 102 can be a distributed feedback (DFB) laser, a Fabry-Perot (FB) laser, a distributed Bragg reflector (DBR) laser, a tunable laser, VCSEL (Vertical Cavity Surface Emitting Laser) or any other type of semiconductor laser.Laser 102 includes an output semiconductor waveguide 103 (with a core 103 a, alower cladding layer 103 b and an upper cladding layer 103 c) which is etched to form a substantiallyvertical end surface 106 and most of the epi material is removed fromsubstrate 101 beyondsurface 106 to minimize the problems of trying to deposit polymers in a trench-like structure. - During the formation of
core 103 a, a portionadjacent surface 106 is reduced to ataper 120, which produces a large spot size. Also, adigital grating 121 is formed in thetaper 120 which is designed to deflect light fromlaser 102 upwardly approximately 90 degrees. Generally,lower cladding layer 103 b is deposited and etched to form the lower side oftaper 120,core 103 a is deposited and etched to completetaper 120 and formdigital grating 121, and upper cladding layer 103 c is deposited to enclosetaper 120 anddigital grating 121 and etched to provide an upper planar surface. - A
lower polymer layer 108 is deposited onsubstrate 101 toplanarize substrate 101. Alternatively, an insulating oxide or nitride could be deposited onsubstrate 101 toplanarize substrate 101. These techniques are also compatible with use of a lower electrode to enable vertical poling in the polymer waveguide. - A relatively thick
lower cladding layer 109 is deposited on the upper surfaces ofoutput semiconductor waveguide 103 andlower polymer layer 108, a core polymer is deposited on the upper surface oflower cladding layer 109 and etched to form awaveguide core 110, and an upperpolymer cladding layer 111 is deposited aroundwaveguide core 110 to form apolymer waveguide 112. In some instances it may be desirable to deposit an anti-reflective (AR) coating 105 on the upper surface ofoutput semiconductor waveguide 103 prior to depositing alower cladding layer 109 to reduce or remove any reflections at the abutting surfaces. Usually the AR coating can be completed via dielectric deposition using CVD, PECVD, sputtering, ebeam, etc. Materials for the dielectric coating can be, for example, oxides, nitrides, and combinations thereof deposited with a thickness for anti-reflection properties. Also, a relatively thicklower cladding layer 109 is deposited to minimize light leakage frompolymer core 110 tosubstrate 101. -
Lower cladding layer 109,core 110, and upper polymer cladding layer 111 (i.e. polymer waveguide 112) are etched at an angle and through to the upper surface ofoutput semiconductor waveguide 103 to form anangular deflection surface 116. In this example,digital grating 121 andangular deflection surface 116 are included in the plane shifting apparatus that shifts light from the laser source on one plane towaveguide 112 and the light output on a different plane. The angle ofsurface 116 is selected to be compatible with the deflection angle ofdigital grating 121, resulting in high optical coupling intowaveguide 112. To further enhance reflection atangular deflection surface 116, a highreflective coating 117 can be deposited on the outer surface ofangular deflection surface 116. - For
guide transition device 100 to operate most efficiently between the planes or levels and to make the alignment ofguide transition device 100 easier and more manufacturable, there must be as much alignment tolerance as possible between the layers or planes. Better alignment tolerance is achieved inguide transition device 100 by reducingcore 103 a oflaser output waveguide 103 to ataper 120adjacent surface 106, which produces a large spot size, supplied todigital grating 121 and, thus, toangular deflection surface 116. The large spot size deflected bydigital grating 121 ontoangular deflection surface 116 at the input ofwaveguide 112 makes the alignment ofguide transition device 100 easier and more manufacturable. - To further enhance alignment tolerance in
guide transition device 100,waveguide core 110 includes ataper 124 in which the dimensions ofcore 110 are reduced ascore 110 progresses from a midpoint to adjacentangular deflection surface 116.Taper 124, in conjunction with the large spot size deflected ontoangular deflection surface 116, substantially increases alignment tolerance between the planes. Also, better alignment tolerance is achieved inguide transition device 100 by reducingcore 110 ofwaveguide 112 to ataper 126 adjacent the output, which produces a large spot size, represented bybroken lines 128, at the output edge ofwaveguide 112 for coupling into external equipment, such as fibers or the like. Thelarge spot size 126 at the output makes the alignment ofguide transition device 100 with exterior equipment easier and more manufacturable. In this specific example,polymer waveguide modulator 104 is formed inwaveguide 112 betweentaper 124 and taper 126 ofcore 110.Modulator 104 can be for example, a Mach-Zehnder modulator, an intensity, polarization, or phase modulator, etc. - Referring to
FIG. 7 , a top plan view ofguide transition device 100 is provided to illustrate the horizontal tapers ofcores example modulator 104 is an intensity, polarization, or phase modulator, etc. Referring additionally toFIG. 8 , a top plan view ofguide transition device 100 is provided to illustrate the incorporation of a Mach-Zehnder modulator asmodulator 104. In this example to include a Mach-Zehnder modulator, core tapers 124 and 126 are designed much smaller to accommodate the Mach-Zehnder interferometer. The purpose of the examples illustrated inFIGS. 7 and 8 are to illustrate specifically how various modulators can be incorporated into a guide transition device in accordance with the present invention. - Referring now to
FIG. 9 , an initial sequential step in a preferred process for fabricatingguide transition device 100, is illustrated. After the fabrication ofoutput semiconductor waveguide 103 withtaper 120 anddigital grating 121, anti-reflective (AR) coating 105 can be deposited on the upper surface ofoutput semiconductor waveguide 103 prior to depositinglower cladding layer 109. The remaining steps for the fabrication ofguide transition device 100 are basically the same as the steps illustrated and explained in and with reference toFIGS. 5B through 5H above. - Thus, a new and improved guide transition device for efficiently coupling light between devices and to output apparatus is disclosed. The new and improved guide transition device is specifically designed with one or more digital gratings to improve and/or simplify fabrication of guide transition devices.
- Various changes and modifications to the embodiments herein chosen for purposes of illustration will readily occur to those skilled in the art. To the extent that such modifications and variations do not depart from the spirit of the invention, they are intended to be included within the scope thereof which is assessed only by a fair interpretation of the following claims.
- Having fully described the invention in such clear and concise terms as to enable those skilled in the art to understand and practice the same, the invention claimed is:
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