US20190312231A1 - Organic light emitting diode display device and manufacturing method thereof - Google Patents
Organic light emitting diode display device and manufacturing method thereof Download PDFInfo
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- US20190312231A1 US20190312231A1 US16/111,874 US201816111874A US2019312231A1 US 20190312231 A1 US20190312231 A1 US 20190312231A1 US 201816111874 A US201816111874 A US 201816111874A US 2019312231 A1 US2019312231 A1 US 2019312231A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 144
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000011521 glass Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 239000011358 absorbing material Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 26
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 8
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 8
- 229910004205 SiNX Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- -1 polyoxyethylene Polymers 0.000 claims description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000007641 inkjet printing Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 10
- 230000035699 permeability Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 203
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H01L51/5259—
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- H01L51/5253—
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- H01L51/56—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Definitions
- the present invention relates to a display field, and more particularly to an organic light emitting diode display device and a manufacturing method thereof.
- OLED Organic Light-Emitting Diode
- properties of the OLED such as low start-up voltage, lightness, thinness and self-luminescence
- OLEDs are widely studied for the development of lighting products and panel industry to meet the requirements of low energy consumption, light weight and surface light sources.
- properties of flexibility, thinness, and self-luminescence of the OLED flexible display panel more and more OLED flexible display products are created.
- the structure of the OLED display device is performed by using a thin film package as shown in FIG. 1 .
- the numbers 1 ′, 2 ′, 3 ′, 4 ′, 5 ′, 6 ′, 7 ′ and 8 ′ respectively indicate the glass substrate and the TFT (Thin Film Transistor) layer, the pixel layer, the first barrier layer, the first buffer layer, the second barrier layer, the second buffer layer and the third barrier layer.
- TFT Thin Film Transistor
- the thin film barrier layer and the buffer layer are thin, there is a stress between the layers. Therefore, the ability of the barrier layer and the buffer layer for blocking water and oxygen does not achieve the desired effect.
- the water-oxygen permeability is high, and the barrier layer and the buffer layer are more likely to break and cause the package to fail.
- the present invention provides an organic light emitting diode display device and a manufacturing method thereof, which can reduce the permeability of water and oxygen for lowering the risk of breakage of the barrier layer and the buffer layer, and improving the service life of the OLED display device.
- the present invention provides a manufacturing method of an organic light emitting diode display device, comprising:
- preparing the barrier layer and the buffer layer on the glass substrate comprises:
- preparing the plurality of grooves in the barrier layer comprises:
- preparing the barrier layer and the buffer layer on the glass substrate further comprises:
- preparing the organic light emitting diode element layer on the thin film transistor layer comprises:
- preparing the plurality of grooves in the barrier layer comprises:
- non-light emitting area is an area in the barrier layer outside an area directly above the organic light emitting diode display elements.
- preparing the water absorbing material layer in the plurality of grooves comprises:
- a material of the water absorbing material layer is a polyvinyl alcohol material and/or a polyoxyethylene material
- the barrier layer is made of SiNx and/or SiOx.
- the present invention further provides a manufacturing method of an organic light emitting diode display device, comprising:
- preparing the barrier layer and the buffer layer on the glass substrate comprises:
- preparing the plurality of grooves in the barrier layer comprises:
- preparing the barrier layer and the buffer layer on the glass substrate further comprises:
- a material of the water absorbing material layer is a polyvinyl alcohol material and/or a polyoxyethylene material
- the barrier layer is made of SiNx and/or SiOx.
- preparing the organic light emitting diode element layer on the thin film transistor layer comprises:
- preparing the plurality of grooves in the barrier layer comprises:
- non-light emitting area is an area in the barrier layer outside an area directly above the organic light emitting diode display elements.
- preparing the water absorbing material layer in the plurality of grooves comprises:
- the present invention further provides an organic light emitting diode display device, comprising a glass substrate, a thin film transistor layer disposed on the glass substrate, an organic light emitting diode element layer disposed on the thin film transistor layer, a barrier layer and a buffer layer disposed on the glass substrate, wherein the barrier layer covers the organic light emitting diode element layer;
- a plurality of grooves is disposed in the barrier layer, and a material of the water absorbing material layer is disposed in the plurality of grooves.
- the barrier layer comprises a first barrier layer and a second barrier layer
- the buffer layer comprises a first buffer layer and a second buffer layer
- the first barrier layer, the first buffer layer, the second barrier layer, the second buffer layer and the third barrier layer are sequentially arranged in a direction away from the organic light emitting diode element layer, and the plurality of grooves is disposed in the second barrier layer.
- the organic light emitting diode element layer comprises a plurality of organic light emitting diode elements, and each of the grooves is located in a non-light emitting area of the barrier layer, wherein the non-light emitting area is an area in the barrier layer outside an area directly above the organic light emitting diode display elements.
- a material of the water absorbing material layer is a polyvinyl alcohol material and/or a polyoxyethylene material
- the barrier layer is made of SiNx and/or SiOx.
- the implementation of the present invention possesses the following benefits: in the present invention, by disposing the water absorbing material layer in the barrier layer, water and oxygen can be prevented from penetrating into the organic light emitting diode display device and the water-oxygen permeability can be reduced. The water and oxygen penetration into the thin film transistor layer and the organic light emitting diode layer can be reduced. It can be avoided that the water-oxygen permeability of the barrier layer and the buffer layer is too high to cause the fracture and the package failure can also be avoided to improve the service life of the organic light emitting diode display device.
- FIG. 1 is a structural diagram of an organic light emitting diode display device in the prior art of the present invention.
- FIG. 2 is a diagram of a thin film transistor layer and an organic light emitting diode display element layer prepared on a glass substrate according to the present invention.
- FIG. 3 is a diagram of a first barrier layer, a first buffer layer and a second barrier layer prepared on a glass substrate according to the present invention.
- FIG. 4 is a diagram of a plurality of grooves prepared on a second barrier layer according to the present invention.
- FIG. 5 is a diagram of a water absorbing material layer prepared in a plurality of groove according to the present invention.
- FIG. 6 is a diagram of a second buffer layer and a third barrier layer prepared on the second barrier layer according to the present invention.
- the present invention provides a manufacturing method of an organic light emitting diode (OLED) display device, comprising:
- the thin film transistor (TFT) layer 2 comprises a plurality of thin film transistors to form a driving circuit to drive the organic light emitting diode elements to emit light;
- the barrier layer covers the organic light emitting diode element layer 30 ; wherein in general, the barrier layer is used to block water vapor and oxygen; here, the barrier layer and the buffer layer constitute a thin film packaging layer;
- the water absorbing material layer 7 can be used to absorb water and oxygen.
- preparing the barrier layer and the buffer layer on the glass substrate 1 comprises:
- Preparing the plurality of grooves 61 in the barrier layer comprises:
- Preparing the barrier layer and the buffer layer on the glass substrate 1 further comprises:
- preparing the organic light emitting diode element layer 30 on the thin film transistor layer 2 comprises:
- the organic light emitting diode elements 3 may be organic light emitting diode elements 3 that emit white light, and may also be organic light emitting diode elements 3 that emit light of other colors, such as red, green, blue or the like.
- Preparing the plurality of grooves 61 in the barrier layer comprises:
- the non-light emitting area is an area in the barrier layer outside an area directly above the organic light emitting diode display elements 3 as shown in the dashed frame area in FIG. 3 ; correspondingly, the light emitting area is an area directly above the organic light emitting diode display elements 3 .
- the light emitting area is a pixel area corresponding to the organic light emitting diode display device.
- preparing the water absorbing material layer 7 in the plurality of grooves 61 comprises:
- a material of the water absorbing material layer 7 is a polyvinyl alcohol material and/or a polyoxyethylene material, and the barrier layer is made of SiNx and/or SiOx, and x>0.
- the present invention further provides an organic light emitting diode display device, comprising a glass substrate 1 , a thin film transistor layer 2 disposed on the glass substrate 1 , an organic light emitting diode element layer 30 disposed on the thin film transistor layer 2 , a barrier layer and a buffer layer disposed on the glass substrate 1 , and the barrier layer covers the organic light emitting diode element layer 30 .
- a plurality of grooves 61 is disposed in the barrier layer, and a water absorbing material layer 7 is disposed in the plurality of grooves 61 .
- the barrier layer comprises a first barrier layer 4 , a second barrier layer 6
- the buffer layer comprises a first buffer layer 5 and a second buffer layer 8 .
- the first barrier layer 4 , the first buffer layer 5 , the second barrier layer 6 , the second buffer layer 8 and the third barrier layer 9 are sequentially arranged in a direction away from the organic light emitting diode element layer 30 , and the plurality of grooves 61 is disposed in the second barrier layer 6 .
- the organic light emitting diode element layer 30 comprises a plurality of organic light emitting diode elements 3 , and each of the grooves 61 is located in a non-light emitting area of the barrier layer, wherein the non-light emitting area is an area in the barrier layer outside an area directly above the organic light emitting diode display elements 3 .
- a material of the water absorbing material layer 7 is a polyvinyl alcohol material and/or a polyoxyethylene material, and the barrier layer is made of SiNx and/or SiOx.
- the water absorbing material layer 7 is prepared inside the thin film packaging layer composed of the barrier layer and the buffer layer to prevent water and oxygen from penetrating into the organic light emitting diode display device and the water-oxygen permeability can be reduced.
- the water absorbing material layer 7 is disposed in the non-light emitting area in the barrier layer. After the water and oxygen penetrate the barrier layer, the water and oxygen may be absorbed before entering the light emitting area, so that the service life of the organic light emitting diode display device can be improved.
- the water absorbing material layer 7 is disposed in the non-light emitting area in the barrier layer, it is possible to prevent the transmittance of the water absorbing material layer 7 after water-oxygen absorption from decreasing, thus affecting the normal light-emitting efficiency of the organic light emitting diode display device; therefore, according to the present invention, under the premise of improving the effect of the thin film package of the organic light emitting diode display device, the light emitting performance of the organic light emitting diode display device will not be affected.
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
- This application is a continuing application of PCT Patent Application No. PCT/CN2018/089410 entitled “Organic light emitting diode display device and manufacturing method thereof”, filed on May 31, 2018, which claims priority to Chinese Patent Application No. 201810317687.X, filed on Apr. 10, 2018, both of which are hereby incorporated in its entireties by reference.
- The present invention relates to a display field, and more particularly to an organic light emitting diode display device and a manufacturing method thereof.
- In the current field of lighting and display, due to the properties of the OLED (Organic Light-Emitting Diode), such as low start-up voltage, lightness, thinness and self-luminescence, more and more OLEDs are widely studied for the development of lighting products and panel industry to meet the requirements of low energy consumption, light weight and surface light sources. At present, due to the properties of flexibility, thinness, and self-luminescence of the OLED flexible display panel, more and more OLED flexible display products are created.
- At present, the structure of the OLED display device is performed by using a thin film package as shown in
FIG. 1 . Thenumbers 1′, 2′, 3′, 4′, 5′, 6′, 7′ and 8′ respectively indicate the glass substrate and the TFT (Thin Film Transistor) layer, the pixel layer, the first barrier layer, the first buffer layer, the second barrier layer, the second buffer layer and the third barrier layer. However, since the thin film barrier layer and the buffer layer are thin, there is a stress between the layers. Therefore, the ability of the barrier layer and the buffer layer for blocking water and oxygen does not achieve the desired effect. The water-oxygen permeability is high, and the barrier layer and the buffer layer are more likely to break and cause the package to fail. - For solving the aforesaid technical problems, the present invention provides an organic light emitting diode display device and a manufacturing method thereof, which can reduce the permeability of water and oxygen for lowering the risk of breakage of the barrier layer and the buffer layer, and improving the service life of the OLED display device.
- The present invention provides a manufacturing method of an organic light emitting diode display device, comprising:
- preparing a thin film transistor layer on a glass substrate;
- preparing an organic light emitting diode element layer on the thin film transistor layer, and preparing a barrier layer and a buffer layer on the glass substrate, wherein the barrier layer covers the organic light emitting diode element layer;
- preparing a plurality of grooves in the barrier layer, and preparing a water absorbing material layer in the plurality of grooves.
- Preferably, preparing the barrier layer and the buffer layer on the glass substrate comprises:
- sequentially preparing a first barrier layer, a first buffer layer and a second barrier layer on the glass substrate;
- preparing the plurality of grooves in the barrier layer comprises:
- preparing the plurality of grooves in the second barrier layer;
- preparing the barrier layer and the buffer layer on the glass substrate further comprises:
- preparing a second buffer layer and a third barrier layer on the second barrier layer.
- Preferably, preparing the organic light emitting diode element layer on the thin film transistor layer comprises:
- preparing a plurality of organic light emitting diode elements on the thin film transistor layer, wherein the plurality of organic light emitting diode elements are arranged at intervals.
- Preferably, preparing the plurality of grooves in the barrier layer comprises:
- preparing the plurality of grooves in a non-light emitting area in the barrier layer; wherein the non-light emitting area is an area in the barrier layer outside an area directly above the organic light emitting diode display elements.
- Preferably, preparing the water absorbing material layer in the plurality of grooves comprises:
- preparing the water absorbing material layer in the plurality of grooves by one of coating, spraying and inkjet printing.
- Preferably, a material of the water absorbing material layer is a polyvinyl alcohol material and/or a polyoxyethylene material, and the barrier layer is made of SiNx and/or SiOx.
- The present invention further provides a manufacturing method of an organic light emitting diode display device, comprising:
- preparing a thin film transistor layer on a glass substrate;
- preparing an organic light emitting diode element layer on the thin film transistor layer, and preparing a barrier layer and a buffer layer on the glass substrate, wherein the barrier layer covers the organic light emitting diode element layer;
- preparing a plurality of grooves in the barrier layer, and preparing a water absorbing material layer in the plurality of grooves;
- wherein preparing the barrier layer and the buffer layer on the glass substrate comprises:
- sequentially preparing a first barrier layer, a first buffer layer and a second barrier layer on the glass substrate;
- preparing the plurality of grooves in the barrier layer comprises:
- preparing the plurality of grooves in the second barrier layer;
- preparing the barrier layer and the buffer layer on the glass substrate further comprises:
- preparing a second buffer layer and a third barrier layer on the second barrier layer;
- wherein a material of the water absorbing material layer is a polyvinyl alcohol material and/or a polyoxyethylene material, and the barrier layer is made of SiNx and/or SiOx.
- Preferably, preparing the organic light emitting diode element layer on the thin film transistor layer comprises:
- preparing a plurality of organic light emitting diode elements on the thin film transistor layer, wherein the plurality of organic light emitting diode elements are arranged at intervals.
- Preferably, preparing the plurality of grooves in the barrier layer comprises:
- preparing the plurality of grooves in a non-light emitting area in the barrier layer; wherein the non-light emitting area is an area in the barrier layer outside an area directly above the organic light emitting diode display elements.
- Preferably, preparing the water absorbing material layer in the plurality of grooves comprises:
- preparing the water absorbing material layer in the plurality of grooves by one of coating, spraying and inkjet printing.
- The present invention further provides an organic light emitting diode display device, comprising a glass substrate, a thin film transistor layer disposed on the glass substrate, an organic light emitting diode element layer disposed on the thin film transistor layer, a barrier layer and a buffer layer disposed on the glass substrate, wherein the barrier layer covers the organic light emitting diode element layer;
- wherein a plurality of grooves is disposed in the barrier layer, and a material of the water absorbing material layer is disposed in the plurality of grooves.
- Preferably, the barrier layer comprises a first barrier layer and a second barrier layer, and the buffer layer comprises a first buffer layer and a second buffer layer;
- the first barrier layer, the first buffer layer, the second barrier layer, the second buffer layer and the third barrier layer are sequentially arranged in a direction away from the organic light emitting diode element layer, and the plurality of grooves is disposed in the second barrier layer.
- Preferably, the organic light emitting diode element layer comprises a plurality of organic light emitting diode elements, and each of the grooves is located in a non-light emitting area of the barrier layer, wherein the non-light emitting area is an area in the barrier layer outside an area directly above the organic light emitting diode display elements.
- Preferably, a material of the water absorbing material layer is a polyvinyl alcohol material and/or a polyoxyethylene material, and the barrier layer is made of SiNx and/or SiOx.
- The implementation of the present invention possesses the following benefits: in the present invention, by disposing the water absorbing material layer in the barrier layer, water and oxygen can be prevented from penetrating into the organic light emitting diode display device and the water-oxygen permeability can be reduced. The water and oxygen penetration into the thin film transistor layer and the organic light emitting diode layer can be reduced. It can be avoided that the water-oxygen permeability of the barrier layer and the buffer layer is too high to cause the fracture and the package failure can also be avoided to improve the service life of the organic light emitting diode display device.
- In order to more clearly illustrate the embodiments of the present invention or prior art, the following figures will be described in the embodiments are briefly introduced. It is obvious that the drawings are merely some embodiments of the present invention, those of ordinary skill in this field can obtain other figures according to these figures without paying the premise.
-
FIG. 1 is a structural diagram of an organic light emitting diode display device in the prior art of the present invention. -
FIG. 2 is a diagram of a thin film transistor layer and an organic light emitting diode display element layer prepared on a glass substrate according to the present invention. -
FIG. 3 is a diagram of a first barrier layer, a first buffer layer and a second barrier layer prepared on a glass substrate according to the present invention. -
FIG. 4 is a diagram of a plurality of grooves prepared on a second barrier layer according to the present invention. -
FIG. 5 is a diagram of a water absorbing material layer prepared in a plurality of groove according to the present invention. -
FIG. 6 is a diagram of a second buffer layer and a third barrier layer prepared on the second barrier layer according to the present invention. - The present invention provides a manufacturing method of an organic light emitting diode (OLED) display device, comprising:
- as shown in
FIG. 2 , preparing a thin film transistor (TFT)layer 2 on aglass substrate 1; wherein the thin film transistor (TFT)layer 2 comprises a plurality of thin film transistors to form a driving circuit to drive the organic light emitting diode elements to emit light; - preparing an organic light emitting diode (OLED)
element layer 30 on the thinfilm transistor layer 2, and preparing a barrier layer and a buffer layer on theglass substrate 1, wherein the barrier layer covers the organic light emittingdiode element layer 30; wherein in general, the barrier layer is used to block water vapor and oxygen; here, the barrier layer and the buffer layer constitute a thin film packaging layer; - preparing a plurality of
grooves 61 in the barrier layer, and preparing a water absorbing material layer 7 in the plurality ofgrooves 61, wherein here, the water absorbing material layer 7 can be used to absorb water and oxygen. - Furthermore, preparing the barrier layer and the buffer layer on the
glass substrate 1 comprises: - as shown in
FIG. 3 , sequentially preparing afirst barrier layer 4, afirst buffer layer 5 and asecond barrier layer 6 on theglass substrate 1 by chemical vapor deposition. - Preparing the plurality of
grooves 61 in the barrier layer comprises: - as shown in
FIG. 4 , patterning thesecond barrier layer 6, and preparing the plurality ofgrooves 61 in thesecond barrier layer 6; as shown inFIG. 5 , preparing the water absorbing material layer 7 in the plurality ofgrooves 61 in thesecond barrier layer 6. - Preparing the barrier layer and the buffer layer on the
glass substrate 1 further comprises: - as shown in
FIG. 6 , preparing asecond buffer layer 8 and a third barrier layer 9 on thesecond barrier layer 6. - Certainly, it is also possible to prepare the plurality of
grooves 61 in thefirst barrier layer 4 and the third barrier layer 9, and it is also possible to prepare the water absorbing material layer 7 in the plurality ofgrooves 61 of thefirst barrier layer 4 and the third barrier layer 9. - Furthermore, preparing the organic light emitting
diode element layer 30 on the thinfilm transistor layer 2 comprises: - preparing a plurality of organic light emitting
diode elements 3 on the thinfilm transistor layer 2, wherein the plurality of organic light emittingdiode elements 3 are arranged at intervals. Here, the organic light emittingdiode elements 3 may be organic light emittingdiode elements 3 that emit white light, and may also be organic light emittingdiode elements 3 that emit light of other colors, such as red, green, blue or the like. - Preparing the plurality of
grooves 61 in the barrier layer comprises: - preparing the plurality of
grooves 61 in a non-light emitting area in the barrier layer; wherein the non-light emitting area is an area in the barrier layer outside an area directly above the organic light emittingdiode display elements 3 as shown in the dashed frame area inFIG. 3 ; correspondingly, the light emitting area is an area directly above the organic light emittingdiode display elements 3. The light emitting area is a pixel area corresponding to the organic light emitting diode display device. - preparing the water absorbing material layer 7 in the plurality of
grooves 61 comprises: - preparing the water absorbing material layer 7 in the plurality of
grooves 61 by one of coating, spraying and inkjet printing. - Furthermore, a material of the water absorbing material layer 7 is a polyvinyl alcohol material and/or a polyoxyethylene material, and the barrier layer is made of SiNx and/or SiOx, and x>0.
- The present invention further provides an organic light emitting diode display device, comprising a
glass substrate 1, a thinfilm transistor layer 2 disposed on theglass substrate 1, an organic light emittingdiode element layer 30 disposed on the thinfilm transistor layer 2, a barrier layer and a buffer layer disposed on theglass substrate 1, and the barrier layer covers the organic light emittingdiode element layer 30. - A plurality of
grooves 61 is disposed in the barrier layer, and a water absorbing material layer 7 is disposed in the plurality ofgrooves 61. - Furthermore, the barrier layer comprises a
first barrier layer 4, asecond barrier layer 6, and the buffer layer comprises afirst buffer layer 5 and asecond buffer layer 8. - The
first barrier layer 4, thefirst buffer layer 5, thesecond barrier layer 6, thesecond buffer layer 8 and the third barrier layer 9 are sequentially arranged in a direction away from the organic light emittingdiode element layer 30, and the plurality ofgrooves 61 is disposed in thesecond barrier layer 6. - Furthermore, the organic light emitting
diode element layer 30 comprises a plurality of organic light emittingdiode elements 3, and each of thegrooves 61 is located in a non-light emitting area of the barrier layer, wherein the non-light emitting area is an area in the barrier layer outside an area directly above the organic light emittingdiode display elements 3. - Furthermore, a material of the water absorbing material layer 7 is a polyvinyl alcohol material and/or a polyoxyethylene material, and the barrier layer is made of SiNx and/or SiOx.
- In conclusion, in the organic light emitting diode display device provided by the present invention, the water absorbing material layer 7 is prepared inside the thin film packaging layer composed of the barrier layer and the buffer layer to prevent water and oxygen from penetrating into the organic light emitting diode display device and the water-oxygen permeability can be reduced. The water absorbing material layer 7 is disposed in the non-light emitting area in the barrier layer. After the water and oxygen penetrate the barrier layer, the water and oxygen may be absorbed before entering the light emitting area, so that the service life of the organic light emitting diode display device can be improved. Meanwhile, since the water absorbing material layer 7 is disposed in the non-light emitting area in the barrier layer, it is possible to prevent the transmittance of the water absorbing material layer 7 after water-oxygen absorption from decreasing, thus affecting the normal light-emitting efficiency of the organic light emitting diode display device; therefore, according to the present invention, under the premise of improving the effect of the thin film package of the organic light emitting diode display device, the light emitting performance of the organic light emitting diode display device will not be affected.
- The above content with the specific preferred embodiments of the present invention is further made to the detailed description, the specific embodiments of the present invention should not be considered limited to these descriptions. Those of ordinary skill in the art for the present invention, without departing from the spirit of the present invention, can make various simple deduction or replacement, should be deemed to belong to the scope of the present invention.
Claims (14)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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CN201810317687 | 2018-04-10 | ||
CN201810317687.X | 2018-04-10 | ||
CN201810317687.XA CN108565360A (en) | 2018-04-10 | 2018-04-10 | A kind of OLED display and preparation method thereof |
PCT/CN2018/089410 WO2019196177A1 (en) | 2018-04-10 | 2018-05-31 | Oled display device and preparation method therefor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/CN2018/089410 Continuation WO2019196177A1 (en) | 2018-04-10 | 2018-05-31 | Oled display device and preparation method therefor |
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US20190312231A1 true US20190312231A1 (en) | 2019-10-10 |
US10673022B2 US10673022B2 (en) | 2020-06-02 |
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US11152586B2 (en) * | 2018-07-23 | 2021-10-19 | Yungu (Gu'an) Technology Co., Ltd. | Display panels having pixel circuits in grooved substrate |
US11271192B2 (en) * | 2018-10-19 | 2022-03-08 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED array substrate and method for manufacturing same |
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US11152586B2 (en) * | 2018-07-23 | 2021-10-19 | Yungu (Gu'an) Technology Co., Ltd. | Display panels having pixel circuits in grooved substrate |
US11271192B2 (en) * | 2018-10-19 | 2022-03-08 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED array substrate and method for manufacturing same |
US11302896B2 (en) * | 2019-12-17 | 2022-04-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and manufacturing method thereof, and display device |
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