US20190172927A1 - Vertical transport field-effect transistor including air-gap top spacer - Google Patents

Vertical transport field-effect transistor including air-gap top spacer Download PDF

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US20190172927A1
US20190172927A1 US15/831,340 US201715831340A US2019172927A1 US 20190172927 A1 US20190172927 A1 US 20190172927A1 US 201715831340 A US201715831340 A US 201715831340A US 2019172927 A1 US2019172927 A1 US 2019172927A1
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region
source
dielectric
extending
layer
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US15/831,340
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US10319833B1 (en
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Hemanth Jagannathan
ChoongHyun Lee
Alexander Reznicek
Christopher Waskiewicz
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International Business Machines Corp
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International Business Machines Corp
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Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JAGANNATHAN, HEMANTH, LEE, CHOONGHYUN, REZNICEK, ALEXANDER, WASKIEWICZ, CHRISTOPHER
Publication of US20190172927A1 publication Critical patent/US20190172927A1/en
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