US20190140010A1 - Cmos sensors and methods of forming the same - Google Patents
Cmos sensors and methods of forming the same Download PDFInfo
- Publication number
- US20190140010A1 US20190140010A1 US15/884,393 US201815884393A US2019140010A1 US 20190140010 A1 US20190140010 A1 US 20190140010A1 US 201815884393 A US201815884393 A US 201815884393A US 2019140010 A1 US2019140010 A1 US 2019140010A1
- Authority
- US
- United States
- Prior art keywords
- dielectric layer
- bonding pad
- semiconductor substrate
- dummy pattern
- interconnect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000012212 insulator Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 13
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 description 11
- 238000001514 detection method Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910020177 SiOF Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02123—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body inside the bonding area
- H01L2224/0214—Structure of the auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02233—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body not in direct contact with the bonding area
- H01L2224/02235—Reinforcing structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02233—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body not in direct contact with the bonding area
- H01L2224/02255—Shape of the auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02233—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body not in direct contact with the bonding area
- H01L2224/0226—Material of the auxiliary member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
- H01L2224/0345—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/038—Post-treatment of the bonding area
- H01L2224/0383—Reworking, e.g. shaping
- H01L2224/03831—Reworking, e.g. shaping involving a chemical process, e.g. etching the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
- H01L2224/05085—Plural internal layers being stacked with additional elements, e.g. vias arrays, interposed between the stacked layers
- H01L2224/05089—Disposition of the additional element
- H01L2224/05093—Disposition of the additional element of a plurality of vias
- H01L2224/05096—Uniform arrangement, i.e. array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
- H01L2224/05559—Shape in side view non conformal layer on a patterned surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05567—Disposition the external layer being at least partially embedded in the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
- H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05575—Plural external layers
- H01L2224/05578—Plural external layers being disposed next to each other, e.g. side-to-side arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
- H01L2924/35121—Peeling or delaminating
Definitions
- Image sensors are widely used in digital still cameras, cellular phones, security cameras, medical, automobile, and other applications.
- the technology used to manufacture image sensors, and in particular CMOS (complementary metal-oxide-semiconductor) image sensors, has continued to advance at a rapid pace. For example, the demands of higher resolution and lower power consumption have encouraged further miniaturization and integration of image sensors.
- CMOS complementary metal-oxide-semiconductor
- FIG. 1 is a flow chart of a method of forming a CMOS sensor in accordance with some embodiments of the disclosure.
- FIGS. 2A-2E are schematic cross-sectional views illustrating a method of forming a CMOS sensor in accordance with some embodiments of the disclosure.
- FIG. 3 is a schematic top view illustrating a dummy pattern and a bonding pad of a CMOS sensor in accordance with some embodiments of the disclosure.
- first and first features are formed in direct contact
- additional features may be formed between the second and first features, such that the second and first features may not be in direct contact
- disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- spatially relative terms such as “beneath”, “below”, “lower”, “over”, “overlying”, “above”, “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures.
- the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
- the apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- FIG. 1 is a flow chart of a method of forming a CMOS sensor in accordance with some embodiments of the disclosure.
- FIGS. 2A-2E are schematic cross-sectional views illustrating a method of forming a CMOS sensor in accordance with some embodiments of the disclosure.
- FIG. 3 is a schematic top view illustrating a dummy pattern and a bonding pad of a CMOS sensor in accordance with some embodiments of the disclosure.
- a semiconductor substrate 110 is provided, and a dielectric pattern 120 , a dielectric layer 122 and an interconnect 130 are sequentially disposed over the semiconductor substrate 110 .
- the semiconductor substrate 110 includes a first surface 110 a and a second surface 110 b opposite to the first surface 110 a.
- the first surface 110 a is a front side
- the second surface 110 b is a back side, for example.
- the semiconductor substrate 110 has a pixel region 112 and a circuit region 114 aside the pixel region 112 .
- the pixel region 112 is also an active region, and includes a plurality of image sensing units and phase detection units, for example.
- the image sensing units and the phase detection units are formed through ion implantation on the first surface 110 a of the semiconductor substrate 110 .
- the image sensing units and the phase detection units are photodiodes, wherein each of the photodiodes may include at least one p-type doped region, at least one n-type doped region, and a p-n junction formed between the p-type doped region and the n-type doped region.
- n-type dopants such as phosphorous (P) or arsenic (As)
- P phosphorous
- As arsenic
- p-type dopants such as boron of BF 2
- p-type dopants such as boron of BF 2
- the image sensing units and the phase detection units may be other photoelectric elements capable of performing image sensing and phase detection function.
- a reversed bias is applied to the p-n junctions of the image sensing units and the phase detection units, the p-n junctions are sensitive to an incident light.
- the light received or detected by the image sensing units and the phase detection units is converted into photo-current such that analog signal representing intensity of the photo-current is generated.
- the circuit region 114 is designate for receiving and processing signal originated from the image sensing units and the phase detection units.
- the circuit region 114 for example, includes conductive traces and NAND/NOR gates.
- a material of the semiconductor substrate 110 includes a suitable elemental semiconductor, such as silicon, diamond or germanium; a suitable compound semiconductor, such as gallium arsenide, silicon carbide, indium arsenide, or indium phosphide; or a suitable alloy semiconductor, such as silicon germanium carbide, gallium arsenic phosphide, or gallium indium phosphide.
- the semiconductor substrate 110 may include silicon with p-type dopants such as phosphorous or arsenic.
- the semiconductor substrate 110 has a thickness of about 1.5 ⁇ m to about 3 ⁇ m.
- an insulator 116 is formed in the semiconductor substrate 110 at the first side 110 a.
- the insulator 116 is formed to be embedded in the semiconductor substrate 110 .
- the insulator 116 is a shallow trench isolation (STI) structure.
- STI shallow trench isolation
- the formation process of the insulator 116 may be attained by the following steps. First, a shallow trench having a predetermined depth is formed in the semiconductor substrate 110 by photolithograph/etch process or other suitable patterning processes, for example. Next, a dielectric layer is deposited in the trench.
- a portion of the dielectric layer is removed (e.g., polishing, etching, or a combination thereof) to form the insulator 116 (i.e. the STI structure).
- a material of the insulator 116 i.e. the STI structure
- a variety of semiconductor elements such as n-type metal-oxide-semiconductor (MOS) transistors or/and p-type transistors are formed on the semiconductor substrate 110 in the circuit region 114 .
- MOS metal-oxide-semiconductor
- the dielectric pattern 120 is formed over the first side 110 a of the semiconductor substrate 110 in the circuit region 114 .
- the dielectric pattern 120 is formed to surround the insulator 116 , for example.
- the dielectric pattern 120 is ring-shaped.
- the ring-shaped may be a rectangle, a circle, an eclipse or other suitable shape.
- a material of the dielectric pattern 120 has an etching selectivity similar to the semiconductor substrate 110 .
- the material of the dielectric pattern 120 includes a silicon-based material such as polysilicon.
- the dielectric pattern 120 may be formed by chemical vapor deposition (CVD) such as low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), high density plasma chemical vapor deposition (HDPCVD), or atomic layer chemical vapor deposition (ALCVD) or other suitable methods.
- CVD chemical vapor deposition
- LPCVD low pressure chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
- HDPCVD high density plasma chemical vapor deposition
- ACVD atomic layer chemical vapor deposition
- the dielectric layer 122 is formed over the first side 110 a of the semiconductor substrate 110 to cover the dielectric pattern 120 in the circuit region 114 .
- the dielectric layer 122 is formed in both of the circuit region 114 and the pixel region 112 .
- a material of the dielectric layer 122 has an etching characteristic different from the dielectric pattern 120 and the semiconductor substrate 110 .
- a material of the dielectric layers 122 may be a low k dielectric material (having a k value less than 3.0) such as spin-on inorganic dielectrics, spin-on organic dielectrics, porous inorganic dielectric materials, porous organic dielectric materials, organic polymer or organic silica glass.
- PAE polyallyl ether
- FSG SiOF series material
- porous HSQ or porous MSQ material
- the dielectric layer 122 may be formed by CVD such as LPCVD, PECVD, HDPCVD, or ALCVD, spin coating, or other suitable methods.
- the interconnect 130 is formed over the dielectric layer 122 in the circuit region 114 .
- the interconnect 130 may be a multi-layer interconnect, and includes conductive structures 132 , 136 , 140 , for example.
- the conductive structure 132 is formed over and in the dielectric layer 122 .
- a dual damascene structure with a via hole and a trench is formed by a series of photolithography and anisotropic etching.
- a conductive material layer is plated on the dielectric layer 122 by electrochemical plating (ECP) or electroless plating.
- ECP electrochemical plating
- the conductive material layer is then planarized by chemical mechanical polishing (CMP) to form the conductive structure 132 including a conductive layer 132 b and a contact via 132 a.
- CMP chemical mechanical polishing
- the conductive structure 132 is electrically connected to at least one of the semiconductor elements.
- a dielectric layer 134 is then formed on the dielectric layer 122 by CVD such as LPCVD, PECVD, HDPCVD or ALCVD or spin coating.
- the material of the dielectric layer 134 may be the same or different than that of the dielectric layer 122 .
- a dual damascene structure is formed in the dielectric layer 134 using a series of photolithography and anisotropic etching.
- a conductive material layer is plated on the dielectric layer 134 followed by planarization of the conductive material layer to form a conductive layer 136 b connected to the conductive layer 132 b through a contact via 136 a.
- a dielectric layer 138 is subsequently formed on the dielectric layer 134 by depositing a dielectric material by CVD or spin coating.
- a dual damascene structure is formed in the dielectric layer 138 using a series of photolithography and anisotropic etching.
- a conductive material layer is plated on the dielectric layer 138 followed by planarization of the conductive material layer to form a conductive layer 140 b connected to the conductive layer 136 b through a contact via 140 a.
- the multi-layer interconnect 130 including the contact via 132 a, the conductive layer 132 b , the contact via 136 a, the conductive layer 136 b, the contact via 140 a, and the conductive layer 140 b is inlaid in the dielectric layers 122 , 134 , 138 .
- a material of the dielectric layers 134 , 138 may be a low k dielectric material (having a k value less than 3.0) such as spin-on inorganic dielectrics, spin-on organic dielectrics, porous inorganic dielectric materials, porous organic dielectric materials, organic polymer or organic silica glass.
- the dielectric layers 134 , 138 may be formed by CVD such as LPCVD, PECVD, HDPCVD, or ALCVD, spin coating, or other suitable methods.
- a passivation layer 141 is formed over the interconnect 130 , for example.
- an opening 146 is formed in the semiconductor substrate 110 in the circuit region 114 by removing a portion of the semiconductor substrate 110 , and a trench 148 is formed in the dielectric layer 122 by removing the dielectric pattern 120 .
- a structure of FIG. 2A is turned over, and a photoresist layer 144 is formed over the second surface 110 b of the semiconductor substrate 110 .
- the photoresist layer 144 is patterned and has an opening 144 a over the insulator 116 and the dielectric pattern 120 .
- a sidewall of the opening 144 a is substantially aligned with an outer sidewall of the dielectric pattern 120 , for example.
- the photoresist layer 144 is formed by photolithography including photoresist spin coating, soft baking, exposing, developing, and hard baking.
- dielectric layers 142 a, 142 b may be formed between the photoresist layer 144 and the semiconductor substrate 110 .
- the photoresist layer 144 is formed on the dielectric layer 142 b, and the opening of the photoresist layer 144 exposes a portion of the dielectric layer 142 b over the insulator 116 and the dielectric pattern 120 .
- a material of the dielectric layers 142 a, 142 b has an etching characteristic different from the dielectric pattern 120 and similar to the semiconductor substrate 110 .
- the dielectric layers 142 a, 142 b may be formed by CVD such as LPCVD, PECVD, HDPCVD, or ALCVD or other suitable methods.
- portions of the semiconductor substrate 110 and the dielectric layers 142 a, 142 b are removed by an etching process until a top surface of the insulator 116 is exposed.
- the material of the dielectric pattern 120 has an etching selectivity similar to the semiconductor substrate 110 , during removal process of portions of the semiconductor substrate 110 and the dielectric layers 142 a, 142 b, the dielectric pattern 120 is simultaneously removed to form the trench 148 in the dielectric layer 122 .
- the opening 146 has the trench 148 therein at the edge.
- the portions of the semiconductor substrate 110 and the dielectric pattern 120 may be removed using a back side scribe line (BSSL) etch process or other etch process, for example.
- the dielectric pattern 120 may be removed by different etching process from the semiconductor substrate 110 and the dielectric layers 142 a, 142 b. Since the trench 148 is formed by removing the entire dielectric pattern 120 , the profile of the trench 148 corresponds to the profile of the dielectric pattern 120 , and a depth of the trench corresponds to a thickness of the dielectric pattern 120 .
- the trench 148 surrounds the insulator 116 and is ring-shaped, for example.
- the ring-shaped may be a rectangle, a circle, an eclipse or other suitable shape.
- the trench 148 is formed in the dielectric layer 122 without penetrating the dielectric layer 122 .
- the trench 148 is disposed at a surface 122 a of the dielectric layer 122
- the interconnect 130 is disposed at a surface 122 b opposite to the surface 122 a.
- the trench 148 and the interconnect 130 are disposed at opposite surfaces 122 a, 122 b of the dielectric layer 122 .
- a sidewall of the opening 146 is aligned with a sidewall (i.e., an outer sidewall) of the trench 148 , and the trench 148 and the insulator 116 surrounded by the trench 148 are exposed through the opening 146 .
- the opening 146 has dimensions of about 50 to 150 ⁇ m, and the trench 148 has dimensions of about 0.5 to 1 ⁇ m, for example.
- a depth of the trench 148 is about 20-30% of a thickness of the dielectric layer 122 .
- the depth of the trench 148 is about 800-1500 angstrom, and the thickness of the dielectric layer 122 is about 1000-3200 angstrom.
- a depth of the opening 146 at the edge is substantially equal to a total thickness of the dielectric layers 142 a, 142 b, the semiconductor substrate 110 and the dielectric pattern 120 .
- the etching gas for the semiconductor substrate 110 and the dielectric pattern 120 may include hydrogen bromide (HBr) and oxygen, for example.
- the photoresist layer 144 may be removed through, for example, a resist stripping process or a resist ashing process.
- a bonding pad 152 is formed in a portion of the opening 146 to electrically connect the interconnect 130
- a dummy pattern 154 is formed in the trench 148 aside the bonding pad 152 .
- portions of the insulator 116 and the dielectric layer 122 are removed to form at least one opening 149 exposing a portion of the interconnect 130 .
- a conductive layer 150 is conformally formed on the dielectric layer 142 b over the semiconductor substrate 110 and the top surfaces of the insulator 116 and the dielectric layer 122 including the trench 148 .
- the conductive layer 150 is filled in the trench 148 and the opening 149 .
- a method of forming the conductive layer 150 includes physical vapor deposition (PVD) or sputtering using a target including materials such as copper (Cu), aluminum (Al), aluminum-copper alloy or other suitable methods.
- the conductive layer 150 may further include seed layers, barrier layers, or combinations or multiple layers thereof.
- portions of the conductive layer 150 outside the opening 146 and above an outer portion 116 a of the insulator 116 are removed.
- the conductive layer 150 is divided into two parts in the opening 146 , which are the bonding pad 152 and the dummy pattern 154 separated by the outer portion 116 a the insulator 116 and the dielectric layer 122 therebeneath.
- a method of removing the portions of the conductive layer 150 includes an anisotropic etching process, for example. The portions of the conductive layer 150 disposed over the dielectric layer 142 b and the outer portion 116 a of the insulator 116 are vertically removed.
- the bonding pad 152 and the dummy pattern 154 are separated from each other by a distance which is equal to a width of the outer portion 116 a of the insulator 116 .
- a top surface of the dummy pattern 154 is higher than a top surface of the bonding pad 152 with respect to the second surface 122 b of the dielectric layer 122 .
- the top surface of the dummy pattern 154 is substantially coplanar with a top surface of the semiconductor substrate 110 , for example.
- the dummy pattern 154 is insulated from the interconnect 130 by the dielectric layer 122 disposed therebetween in a direction such as a vertical direction.
- the dummy pattern 154 is insulated from the bonding pad 152 by the dielectric layer 122 and the insulator 116 disposed therebetween in a direction such as a horizontal direction.
- the bonding pad 152 is disposed in the opening 146 penetrating the semiconductor substrate 110 , and thus the semiconductor substrate 110 is not disposed between the bonding pad 152 and the interconnect 130 .
- a thickness of the dielectric layer 122 between the dummy pattern 154 and the interconnect 130 is smaller than a thickness of the dielectric layer 122 between the bonding pad 152 and the interconnect 130 .
- a material of the dummy pattern 154 and a material of the bonding pad 152 are the same.
- the dummy pattern 154 is filled in the trench 148 , and thus the dummy pattern 154 is also ring-shaped as shown in FIG. 3 .
- the ring-shaped may be a rectangle, a circle, an eclipse or other suitable shape.
- the dummy pattern 154 inserted in the trench 148 is pin-liked.
- CMOS image sensor may further include a first planarization layer on the semiconductor substrate 110 , a color filter on the first planarization layer in the pixel region, a second planarization layer on the first planarization layer and color filter.
- the CMOS image sensor may further include a microlens on the second planarization layer, wherein the microlens is substantially aligned with the color filter.
- the CMOS image sensor may be a NIR (near-infrared) CMOS, for example.
- the bonding pad is surrounded by the dummy pattern, and the dummy pattern is disposed between the semiconductor substrate and the bonding pad in a direction such as a horizontal direction.
- the dummy pattern is formed in the trench of the dielectric layer and in contact with a sidewall of the semiconductor substrate and sidewalls of the insulator and the dielectric layer beneath the insulator.
- the dummy pattern is disposed in a space between the sidewall of the semiconductor substrate and the sidewalls of the insulator and the dielectric layer beneath the insulator, and the dummy pattern is further inserted into the trench.
- the dummy pattern is substantially secured in the dielectric layer between the semiconductor substrate and the insulator and the dielectric layer beneath the insulator. Accordingly, the bonding pad is prevented from peeling from the sidewall of the semiconductor substrate.
- a CMOS sensor includes a semiconductor substrate, a dielectric layer, an interconnect, a bonding pad and a dummy pattern.
- the semiconductor substrate has a pixel region and a circuit region.
- the dielectric layer is surrounded by the semiconductor substrate in the circuit region.
- the interconnect is disposed over the dielectric layer in the circuit region.
- the bonding pad is disposed in the dielectric layer and electrically connects the interconnect in the circuit region.
- the dummy pattern is disposed in the dielectric layer and surrounds the bonding pad in the circuit region.
- a CMOS sensor includes a patterned semiconductor substrate, a patterned dielectric layer, an interconnect, a bonding pad and a dummy pattern.
- the patterned dielectric layer is exposed by the patterned semiconductor substrate and has at least one trench at a first surface thereof.
- the interconnect is disposed over a second surface opposite to the first surface of the patterned dielectric layer.
- the bonding pad is disposed over the first surface of the patterned dielectric layer and electrically connects the interconnect.
- the dummy pattern is disposed in the trench and aside the bonding pad.
- a method of forming a CMOS sensor includes the following steps.
- a semiconductor substrate having a pixel region and a circuit region is provided.
- a dielectric pattern is formed over the semiconductor substrate in the circuit region.
- a dielectric layer is formed over the semiconductor substrate to cover the dielectric pattern.
- An interconnect is formed over the dielectric layer in the circuit region.
- a portion of the semiconductor substrate is removed to form a first opening exposing the dielectric pattern.
- the dielectric pattern is removed to form a trench in the dielectric layer in the first opening.
- a bonding pad is formed in the dielectric layer in the first opening to electrically connect the interconnect.
- a dummy pattern is formed in the trench aside the bonding pad.
Abstract
Description
- This application claims the priority benefit of U.S. provisional application Ser. No. 62/583,408, filed on Nov. 08, 2017. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
- Image sensors are widely used in digital still cameras, cellular phones, security cameras, medical, automobile, and other applications. The technology used to manufacture image sensors, and in particular CMOS (complementary metal-oxide-semiconductor) image sensors, has continued to advance at a rapid pace. For example, the demands of higher resolution and lower power consumption have encouraged further miniaturization and integration of image sensors.
- Aspects of the disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the critical dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
-
FIG. 1 is a flow chart of a method of forming a CMOS sensor in accordance with some embodiments of the disclosure. -
FIGS. 2A-2E are schematic cross-sectional views illustrating a method of forming a CMOS sensor in accordance with some embodiments of the disclosure. -
FIG. 3 is a schematic top view illustrating a dummy pattern and a bonding pad of a CMOS sensor in accordance with some embodiments of the disclosure. - The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a second feature over or over a first feature in the description that follows may include embodiments in which the second and first features are formed in direct contact, and may also include embodiments in which additional features may be formed between the second and first features, such that the second and first features may not be in direct contact. In addition, the disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- Further, spatially relative terms, such as “beneath”, “below”, “lower”, “over”, “overlying”, “above”, “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
-
FIG. 1 is a flow chart of a method of forming a CMOS sensor in accordance with some embodiments of the disclosure.FIGS. 2A-2E are schematic cross-sectional views illustrating a method of forming a CMOS sensor in accordance with some embodiments of the disclosure.FIG. 3 is a schematic top view illustrating a dummy pattern and a bonding pad of a CMOS sensor in accordance with some embodiments of the disclosure. - Referring to
FIGS. 1 and 2A , at step S210, asemiconductor substrate 110 is provided, and adielectric pattern 120, adielectric layer 122 and aninterconnect 130 are sequentially disposed over thesemiconductor substrate 110. Thesemiconductor substrate 110 includes afirst surface 110 a and asecond surface 110 b opposite to thefirst surface 110 a. In some embodiments, thefirst surface 110 a is a front side, and thesecond surface 110 b is a back side, for example. Thesemiconductor substrate 110 has apixel region 112 and acircuit region 114 aside thepixel region 112. Thepixel region 112 is also an active region, and includes a plurality of image sensing units and phase detection units, for example. In some embodiments, the image sensing units and the phase detection units are formed through ion implantation on thefirst surface 110 a of thesemiconductor substrate 110. For example, the image sensing units and the phase detection units are photodiodes, wherein each of the photodiodes may include at least one p-type doped region, at least one n-type doped region, and a p-n junction formed between the p-type doped region and the n-type doped region. In detail, when thesemiconductor substrate 110 is a p-type substrate, n-type dopants, such as phosphorous (P) or arsenic (As), may be doped into thepixel region 112 to form n-type wells, and the resulting p-n junctions in thepixel region 112 are able to perform the image sensing function and phase detection function. Similarly, when thesemiconductor substrate 110 is an n-type substrate, p-type dopants, such as boron of BF2, may be doped into thepixel region 112 to form p-type wells, and the resulting p-n junctions in thepixel region 112 are able to perform the image sensing function and phase detection function. Detailed descriptions of ion implantation processes for forming n-type doped regions (wells) or p-type doped regions (wells) are omitted herein. In some alternative embodiments, the image sensing units and the phase detection units may be other photoelectric elements capable of performing image sensing and phase detection function. When a reversed bias is applied to the p-n junctions of the image sensing units and the phase detection units, the p-n junctions are sensitive to an incident light. The light received or detected by the image sensing units and the phase detection units is converted into photo-current such that analog signal representing intensity of the photo-current is generated. Thecircuit region 114 is designate for receiving and processing signal originated from the image sensing units and the phase detection units. Thecircuit region 114, for example, includes conductive traces and NAND/NOR gates. - A material of the
semiconductor substrate 110 includes a suitable elemental semiconductor, such as silicon, diamond or germanium; a suitable compound semiconductor, such as gallium arsenide, silicon carbide, indium arsenide, or indium phosphide; or a suitable alloy semiconductor, such as silicon germanium carbide, gallium arsenic phosphide, or gallium indium phosphide. In some embodiments, thesemiconductor substrate 110 may include silicon with p-type dopants such as phosphorous or arsenic. In some embodiments, thesemiconductor substrate 110 has a thickness of about 1.5 μm to about 3 μm. - In some embodiments, an
insulator 116 is formed in thesemiconductor substrate 110 at thefirst side 110 a. In other words, theinsulator 116 is formed to be embedded in thesemiconductor substrate 110. In some embodiments, theinsulator 116 is a shallow trench isolation (STI) structure. However, the present disclosure is not limited thereto. The formation process of the insulator 116 (i.e. the STI structure) may be attained by the following steps. First, a shallow trench having a predetermined depth is formed in thesemiconductor substrate 110 by photolithograph/etch process or other suitable patterning processes, for example. Next, a dielectric layer is deposited in the trench. Subsequently, a portion of the dielectric layer is removed (e.g., polishing, etching, or a combination thereof) to form the insulator 116 (i.e. the STI structure). A material of the insulator 116 (i.e. the STI structure) includes silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a combination thereof. In some alternative embodiments, a variety of semiconductor elements such as n-type metal-oxide-semiconductor (MOS) transistors or/and p-type transistors are formed on thesemiconductor substrate 110 in thecircuit region 114. - In some embodiments, the
dielectric pattern 120 is formed over thefirst side 110 a of thesemiconductor substrate 110 in thecircuit region 114. Thedielectric pattern 120 is formed to surround theinsulator 116, for example. In some embodiments, thedielectric pattern 120 is ring-shaped. The ring-shaped may be a rectangle, a circle, an eclipse or other suitable shape. A material of thedielectric pattern 120 has an etching selectivity similar to thesemiconductor substrate 110. In some embodiments, the material of thedielectric pattern 120 includes a silicon-based material such as polysilicon. Thedielectric pattern 120 may be formed by chemical vapor deposition (CVD) such as low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), high density plasma chemical vapor deposition (HDPCVD), or atomic layer chemical vapor deposition (ALCVD) or other suitable methods. - After forming the
dielectric pattern 120, thedielectric layer 122 is formed over thefirst side 110 a of thesemiconductor substrate 110 to cover thedielectric pattern 120 in thecircuit region 114. In some embodiments, thedielectric layer 122 is formed in both of thecircuit region 114 and thepixel region 112. In some embodiments, a material of thedielectric layer 122 has an etching characteristic different from thedielectric pattern 120 and thesemiconductor substrate 110. A material of thedielectric layers 122 may be a low k dielectric material (having a k value less than 3.0) such as spin-on inorganic dielectrics, spin-on organic dielectrics, porous inorganic dielectric materials, porous organic dielectric materials, organic polymer or organic silica glass. For example, SiLK (k=2.7) or FLARE of a polyallyl ether (PAE) series material (k=2.8), Black Diamond (k=3.0˜2.4), FSG (SiOF series material), HSQ (hydrogen silsesquioxane, k=2.8˜3.0), MSQ (methyl silsesquioxane, k=2.5˜2.7), porous HSQ, or porous MSQ material may be used. Thedielectric layer 122 may be formed by CVD such as LPCVD, PECVD, HDPCVD, or ALCVD, spin coating, or other suitable methods. - The
interconnect 130 is formed over thedielectric layer 122 in thecircuit region 114. In some embodiments, theinterconnect 130 may be a multi-layer interconnect, and includesconductive structures conductive structure 132 is formed over and in thedielectric layer 122. In some embodiments, a dual damascene structure with a via hole and a trench is formed by a series of photolithography and anisotropic etching. Next, a conductive material layer is plated on thedielectric layer 122 by electrochemical plating (ECP) or electroless plating. The conductive material layer is then planarized by chemical mechanical polishing (CMP) to form theconductive structure 132 including aconductive layer 132 b and a contact via 132 a. In some embodiments, theconductive structure 132 is electrically connected to at least one of the semiconductor elements. Then, adielectric layer 134 is then formed on thedielectric layer 122 by CVD such as LPCVD, PECVD, HDPCVD or ALCVD or spin coating. The material of thedielectric layer 134 may be the same or different than that of thedielectric layer 122. A dual damascene structure is formed in thedielectric layer 134 using a series of photolithography and anisotropic etching. A conductive material layer is plated on thedielectric layer 134 followed by planarization of the conductive material layer to form aconductive layer 136 b connected to theconductive layer 132 b through a contact via 136 a. Adielectric layer 138 is subsequently formed on thedielectric layer 134 by depositing a dielectric material by CVD or spin coating. A dual damascene structure is formed in thedielectric layer 138 using a series of photolithography and anisotropic etching. A conductive material layer is plated on thedielectric layer 138 followed by planarization of the conductive material layer to form aconductive layer 140 b connected to theconductive layer 136 b through a contact via 140 a. Therefore, themulti-layer interconnect 130 including the contact via 132 a, theconductive layer 132 b, the contact via 136 a, theconductive layer 136 b, the contact via 140 a, and theconductive layer 140 b is inlaid in thedielectric layers dielectric layers dielectric layers passivation layer 141 is formed over theinterconnect 130, for example. - Referring to
FIGS. 1, 2B and 2C , at steps S220 and S230, anopening 146 is formed in thesemiconductor substrate 110 in thecircuit region 114 by removing a portion of thesemiconductor substrate 110, and atrench 148 is formed in thedielectric layer 122 by removing thedielectric pattern 120. In some embodiments, as shown inFIG. 2B , a structure ofFIG. 2A is turned over, and aphotoresist layer 144 is formed over thesecond surface 110 b of thesemiconductor substrate 110. Thephotoresist layer 144 is patterned and has anopening 144 a over theinsulator 116 and thedielectric pattern 120. A sidewall of the opening 144 a is substantially aligned with an outer sidewall of thedielectric pattern 120, for example. Thephotoresist layer 144 is formed by photolithography including photoresist spin coating, soft baking, exposing, developing, and hard baking. In some embodiments,dielectric layers photoresist layer 144 and thesemiconductor substrate 110. Thus, thephotoresist layer 144 is formed on thedielectric layer 142 b, and the opening of thephotoresist layer 144 exposes a portion of thedielectric layer 142 b over theinsulator 116 and thedielectric pattern 120. A material of thedielectric layers dielectric pattern 120 and similar to thesemiconductor substrate 110. Thedielectric layers - As shown in
FIG. 2C , in some embodiments, by using thephotoresist layer 144 as an etch mask, portions of thesemiconductor substrate 110 and thedielectric layers insulator 116 is exposed. In addition, since the material of thedielectric pattern 120 has an etching selectivity similar to thesemiconductor substrate 110, during removal process of portions of thesemiconductor substrate 110 and thedielectric layers dielectric pattern 120 is simultaneously removed to form thetrench 148 in thedielectric layer 122. In other words, theopening 146 has thetrench 148 therein at the edge. In some embodiments, the portions of thesemiconductor substrate 110 and thedielectric pattern 120 may be removed using a back side scribe line (BSSL) etch process or other etch process, for example. In some alternative embodiments, thedielectric pattern 120 may be removed by different etching process from thesemiconductor substrate 110 and thedielectric layers trench 148 is formed by removing the entiredielectric pattern 120, the profile of thetrench 148 corresponds to the profile of thedielectric pattern 120, and a depth of the trench corresponds to a thickness of thedielectric pattern 120. In some embodiments, thetrench 148 surrounds theinsulator 116 and is ring-shaped, for example. The ring-shaped may be a rectangle, a circle, an eclipse or other suitable shape. Thetrench 148 is formed in thedielectric layer 122 without penetrating thedielectric layer 122. Thetrench 148 is disposed at asurface 122 a of thedielectric layer 122, and theinterconnect 130 is disposed at asurface 122 b opposite to thesurface 122 a. In other words, thetrench 148 and theinterconnect 130 are disposed atopposite surfaces dielectric layer 122. - A sidewall of the
opening 146 is aligned with a sidewall (i.e., an outer sidewall) of thetrench 148, and thetrench 148 and theinsulator 116 surrounded by thetrench 148 are exposed through theopening 146. Theopening 146 has dimensions of about 50 to 150 μm, and thetrench 148 has dimensions of about 0.5 to 1 μm, for example. A depth of thetrench 148 is about 20-30% of a thickness of thedielectric layer 122. For example, the depth of thetrench 148 is about 800-1500 angstrom, and the thickness of thedielectric layer 122 is about 1000-3200 angstrom. A depth of theopening 146 at the edge is substantially equal to a total thickness of thedielectric layers semiconductor substrate 110 and thedielectric pattern 120. The etching gas for thesemiconductor substrate 110 and thedielectric pattern 120 may include hydrogen bromide (HBr) and oxygen, for example. After that, as shown inFIG. 2D , thephotoresist layer 144 may be removed through, for example, a resist stripping process or a resist ashing process. - Referring to
FIGS. 1, 2D and 2E , at steps S230 and S240, abonding pad 152 is formed in a portion of theopening 146 to electrically connect theinterconnect 130, and adummy pattern 154 is formed in thetrench 148 aside thebonding pad 152. In some embodiments, as shown inFIG. 2D , portions of theinsulator 116 and thedielectric layer 122 are removed to form at least oneopening 149 exposing a portion of theinterconnect 130. Then, aconductive layer 150 is conformally formed on thedielectric layer 142 b over thesemiconductor substrate 110 and the top surfaces of theinsulator 116 and thedielectric layer 122 including thetrench 148. In addition, theconductive layer 150 is filled in thetrench 148 and theopening 149. A method of forming theconductive layer 150 includes physical vapor deposition (PVD) or sputtering using a target including materials such as copper (Cu), aluminum (Al), aluminum-copper alloy or other suitable methods. In some alternative embodiments, theconductive layer 150 may further include seed layers, barrier layers, or combinations or multiple layers thereof. - After that, as shown in
FIG. 2E , by using thedielectric layer 142 b as an etch stop layer, portions of theconductive layer 150 outside theopening 146 and above anouter portion 116 a of theinsulator 116 are removed. Thus, theconductive layer 150 is divided into two parts in theopening 146, which are thebonding pad 152 and thedummy pattern 154 separated by theouter portion 116 a theinsulator 116 and thedielectric layer 122 therebeneath. A method of removing the portions of theconductive layer 150 includes an anisotropic etching process, for example. The portions of theconductive layer 150 disposed over thedielectric layer 142 b and theouter portion 116 a of theinsulator 116 are vertically removed. Thebonding pad 152 and thedummy pattern 154 are separated from each other by a distance which is equal to a width of theouter portion 116 a of theinsulator 116. A top surface of thedummy pattern 154 is higher than a top surface of thebonding pad 152 with respect to thesecond surface 122 b of thedielectric layer 122. In some embodiments, the top surface of thedummy pattern 154 is substantially coplanar with a top surface of thesemiconductor substrate 110, for example. Thedummy pattern 154 is insulated from theinterconnect 130 by thedielectric layer 122 disposed therebetween in a direction such as a vertical direction. Thedummy pattern 154 is insulated from thebonding pad 152 by thedielectric layer 122 and theinsulator 116 disposed therebetween in a direction such as a horizontal direction. In some embodiments, thebonding pad 152 is disposed in theopening 146 penetrating thesemiconductor substrate 110, and thus thesemiconductor substrate 110 is not disposed between thebonding pad 152 and theinterconnect 130. A thickness of thedielectric layer 122 between thedummy pattern 154 and theinterconnect 130 is smaller than a thickness of thedielectric layer 122 between thebonding pad 152 and theinterconnect 130. A material of thedummy pattern 154 and a material of thebonding pad 152 are the same. Thedummy pattern 154 is filled in thetrench 148, and thus thedummy pattern 154 is also ring-shaped as shown inFIG. 3 . The ring-shaped may be a rectangle, a circle, an eclipse or other suitable shape. In addition, thedummy pattern 154 inserted in thetrench 148 is pin-liked. - In some alternative embodiments, a conductive material such as solder balls, microbumps, controlled collapse chip connection (C4) bumps, or a combination thereof may later be attached to the
bonding pad 152 for electrical connection to theinterconnect 130, for example. In some alternative embodiments, the CMOS image sensor may further include a first planarization layer on thesemiconductor substrate 110, a color filter on the first planarization layer in the pixel region, a second planarization layer on the first planarization layer and color filter. The CMOS image sensor may further include a microlens on the second planarization layer, wherein the microlens is substantially aligned with the color filter. The CMOS image sensor may be a NIR (near-infrared) CMOS, for example. - In some embodiments, the bonding pad is surrounded by the dummy pattern, and the dummy pattern is disposed between the semiconductor substrate and the bonding pad in a direction such as a horizontal direction. In some embodiments, the dummy pattern is formed in the trench of the dielectric layer and in contact with a sidewall of the semiconductor substrate and sidewalls of the insulator and the dielectric layer beneath the insulator. In other words, the dummy pattern is disposed in a space between the sidewall of the semiconductor substrate and the sidewalls of the insulator and the dielectric layer beneath the insulator, and the dummy pattern is further inserted into the trench. Thus, the dummy pattern is substantially secured in the dielectric layer between the semiconductor substrate and the insulator and the dielectric layer beneath the insulator. Accordingly, the bonding pad is prevented from peeling from the sidewall of the semiconductor substrate.
- In accordance with some embodiments of the disclosure, a CMOS sensor includes a semiconductor substrate, a dielectric layer, an interconnect, a bonding pad and a dummy pattern. The semiconductor substrate has a pixel region and a circuit region. The dielectric layer is surrounded by the semiconductor substrate in the circuit region. The interconnect is disposed over the dielectric layer in the circuit region. The bonding pad is disposed in the dielectric layer and electrically connects the interconnect in the circuit region. The dummy pattern is disposed in the dielectric layer and surrounds the bonding pad in the circuit region.
- In accordance with alternative embodiments of the disclosure, a CMOS sensor includes a patterned semiconductor substrate, a patterned dielectric layer, an interconnect, a bonding pad and a dummy pattern. The patterned dielectric layer is exposed by the patterned semiconductor substrate and has at least one trench at a first surface thereof. The interconnect is disposed over a second surface opposite to the first surface of the patterned dielectric layer. The bonding pad is disposed over the first surface of the patterned dielectric layer and electrically connects the interconnect. The dummy pattern is disposed in the trench and aside the bonding pad.
- In accordance with yet alternative embodiments of the disclosure, a method of forming a CMOS sensor includes the following steps. A semiconductor substrate having a pixel region and a circuit region is provided. A dielectric pattern is formed over the semiconductor substrate in the circuit region. A dielectric layer is formed over the semiconductor substrate to cover the dielectric pattern. An interconnect is formed over the dielectric layer in the circuit region. A portion of the semiconductor substrate is removed to form a first opening exposing the dielectric pattern. The dielectric pattern is removed to form a trench in the dielectric layer in the first opening. A bonding pad is formed in the dielectric layer in the first opening to electrically connect the interconnect. A dummy pattern is formed in the trench aside the bonding pad.
- The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the disclosure. Those skilled in the art should appreciate that they may readily use the disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the disclosure.
Claims (21)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/884,393 US10283548B1 (en) | 2017-11-08 | 2018-01-31 | CMOS sensors and methods of forming the same |
TW107114019A TWI679741B (en) | 2017-11-08 | 2018-04-25 | Cmos sensors and methods of forming the same |
CN201810414185.9A CN109768058B (en) | 2017-11-08 | 2018-05-03 | CMOS sensor and method for forming the same |
DE102018124940.3A DE102018124940B4 (en) | 2017-11-08 | 2018-10-10 | CMOS sensors and methods for forming the same |
KR1020180136678A KR102308481B1 (en) | 2017-11-08 | 2018-11-08 | Cmos sensors and methods of forming the same |
US16/403,638 US11177308B2 (en) | 2017-11-08 | 2019-05-06 | CMOS sensors and methods of forming the same |
US17/525,968 US11901390B2 (en) | 2017-11-08 | 2021-11-15 | Semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762583408P | 2017-11-08 | 2017-11-08 | |
US15/884,393 US10283548B1 (en) | 2017-11-08 | 2018-01-31 | CMOS sensors and methods of forming the same |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/403,638 Continuation US11177308B2 (en) | 2017-11-08 | 2019-05-06 | CMOS sensors and methods of forming the same |
Publications (2)
Publication Number | Publication Date |
---|---|
US10283548B1 US10283548B1 (en) | 2019-05-07 |
US20190140010A1 true US20190140010A1 (en) | 2019-05-09 |
Family
ID=66327561
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/884,393 Active US10283548B1 (en) | 2017-11-08 | 2018-01-31 | CMOS sensors and methods of forming the same |
US16/403,638 Active 2038-05-16 US11177308B2 (en) | 2017-11-08 | 2019-05-06 | CMOS sensors and methods of forming the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/403,638 Active 2038-05-16 US11177308B2 (en) | 2017-11-08 | 2019-05-06 | CMOS sensors and methods of forming the same |
Country Status (4)
Country | Link |
---|---|
US (2) | US10283548B1 (en) |
KR (1) | KR102308481B1 (en) |
CN (1) | CN109768058B (en) |
TW (1) | TWI679741B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11502123B2 (en) | 2020-04-17 | 2022-11-15 | Taiwan Semiconductor Manufacturing Company Limited | Methods for forming image sensor devices |
US11782284B2 (en) * | 2019-10-17 | 2023-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multifunctional collimator for contact image sensors |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018124940B4 (en) * | 2017-11-08 | 2024-02-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS sensors and methods for forming the same |
US10566300B2 (en) * | 2018-01-22 | 2020-02-18 | Globalfoundries Inc. | Bond pads with surrounding fill lines |
CN110223922B (en) * | 2019-06-10 | 2020-12-11 | 武汉新芯集成电路制造有限公司 | Wafer structure, manufacturing method thereof and chip structure |
WO2021035572A1 (en) * | 2019-08-28 | 2021-03-04 | Yangtze Memory Technologies Co., Ltd. | Semiconductor device and fabricating method thereof |
US11515204B2 (en) * | 2020-12-29 | 2022-11-29 | Micron Technology, Inc. | Methods for forming conductive vias, and associated devices and systems |
US11574842B2 (en) | 2021-04-14 | 2023-02-07 | Micron Technology, Inc. | Methods for forming conductive vias, and associated devices and systems |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100187671A1 (en) * | 2009-01-26 | 2010-07-29 | Chuan-Yi Lin | Forming Seal Ring in an Integrated Circuit Die |
US20130182162A1 (en) * | 2012-01-18 | 2013-07-18 | Canon Kabushiki Kaisha | Solid-state image sensor, method of manufacturing the same, and camera |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2974022B1 (en) | 1998-10-01 | 1999-11-08 | ヤマハ株式会社 | Bonding pad structure of semiconductor device |
KR100929424B1 (en) * | 2002-12-24 | 2009-12-03 | 매그나칩 반도체 유한회사 | Method of forming pad of semiconductor device |
JP2005142553A (en) * | 2003-10-15 | 2005-06-02 | Toshiba Corp | Semiconductor device |
US7057296B2 (en) | 2003-10-29 | 2006-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding pad structure |
US20080173904A1 (en) * | 2007-01-22 | 2008-07-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensors with a bonding pad and methods of forming the same |
US20100155949A1 (en) | 2008-12-24 | 2010-06-24 | Texas Instruments Incorporated | Low cost process flow for fabrication of metal capping layer over copper interconnects |
JP2010287638A (en) * | 2009-06-10 | 2010-12-24 | Sony Corp | Solid-state imaging apparatus, method of manufacturing the same, and imaging apparatus |
US8283754B2 (en) | 2010-08-13 | 2012-10-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Seal ring structure with metal pad |
US8435824B2 (en) * | 2011-07-07 | 2013-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside illumination sensor having a bonding pad structure and method of making the same |
US8766387B2 (en) | 2012-05-18 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertically integrated image sensor chips and methods for forming the same |
JP6061726B2 (en) * | 2013-02-26 | 2017-01-18 | ルネサスエレクトロニクス株式会社 | Semiconductor device and semiconductor wafer |
US9418949B2 (en) * | 2013-09-17 | 2016-08-16 | Nanya Technology Corporation | Semiconductor device having voids between top metal layers of metal interconnects |
US9608096B1 (en) * | 2015-10-02 | 2017-03-28 | Globalfoundries Inc. | Implementing stress in a bipolar junction transistor |
US10109666B2 (en) | 2016-04-13 | 2018-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pad structure for backside illuminated (BSI) image sensors |
-
2018
- 2018-01-31 US US15/884,393 patent/US10283548B1/en active Active
- 2018-04-25 TW TW107114019A patent/TWI679741B/en active
- 2018-05-03 CN CN201810414185.9A patent/CN109768058B/en active Active
- 2018-11-08 KR KR1020180136678A patent/KR102308481B1/en active IP Right Grant
-
2019
- 2019-05-06 US US16/403,638 patent/US11177308B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100187671A1 (en) * | 2009-01-26 | 2010-07-29 | Chuan-Yi Lin | Forming Seal Ring in an Integrated Circuit Die |
US20130182162A1 (en) * | 2012-01-18 | 2013-07-18 | Canon Kabushiki Kaisha | Solid-state image sensor, method of manufacturing the same, and camera |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11782284B2 (en) * | 2019-10-17 | 2023-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multifunctional collimator for contact image sensors |
US11502123B2 (en) | 2020-04-17 | 2022-11-15 | Taiwan Semiconductor Manufacturing Company Limited | Methods for forming image sensor devices |
Also Published As
Publication number | Publication date |
---|---|
KR102308481B1 (en) | 2021-10-07 |
US10283548B1 (en) | 2019-05-07 |
TWI679741B (en) | 2019-12-11 |
US11177308B2 (en) | 2021-11-16 |
TW201919183A (en) | 2019-05-16 |
US20190259800A1 (en) | 2019-08-22 |
KR20190052648A (en) | 2019-05-16 |
CN109768058B (en) | 2023-01-13 |
CN109768058A (en) | 2019-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11177308B2 (en) | CMOS sensors and methods of forming the same | |
US11456263B2 (en) | Semiconductor structure and method for forming the same | |
CN102074564B (en) | Bonding process for CMOS image sensor | |
US11296252B2 (en) | Method and apparatus for CMOS sensor packaging | |
US9543257B2 (en) | 3DIC interconnect devices and methods of forming same | |
US20150348874A1 (en) | 3DIC Interconnect Devices and Methods of Forming Same | |
US20170117316A1 (en) | Pad structure for front side illuminated image sensor | |
TWI714329B (en) | Semiconductor structure and method of forming same | |
US11158659B2 (en) | Semiconductor device structure with anti-acid layer and method for forming the same | |
TWI806300B (en) | Method of forming metal grid, backside-illuminated image sensor and method of forming the same | |
KR20190062128A (en) | Image sensor with pad structure | |
US9247116B2 (en) | Image sensor device with light guiding structure | |
CN111987115A (en) | Image sensor device and method of forming the same | |
US20220367391A1 (en) | Semiconductor structure | |
US11901390B2 (en) | Semiconductor device | |
US11705474B2 (en) | Metal reflector grounding for noise reduction in light detector | |
US20240136383A1 (en) | Semiconductor device | |
US20180240835A1 (en) | Image sensor device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
AS | Assignment |
Owner name: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TAIW Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KU, YU-CHIEN;TUNG, HUAI-JEN;LIAO, KENG-YING;AND OTHERS;SIGNING DATES FROM 20180110 TO 20180118;REEL/FRAME:045512/0462 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |