US20190094072A1 - Atomic emission spectrometer based on laser-induced plasma (lip), semiconductor manufacturing facility including the atomic emission spectrometer, and method of manufacturing semiconductor device using the atomic emission spectrometer - Google Patents
Atomic emission spectrometer based on laser-induced plasma (lip), semiconductor manufacturing facility including the atomic emission spectrometer, and method of manufacturing semiconductor device using the atomic emission spectrometer Download PDFInfo
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- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
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- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Definitions
- Apparatuses and methods consistent with the inventive concept relate to a semiconductor device manufacturing device and a method of manufacturing a semiconductor device, and more particularly, to an atomic emission spectrometer (AES) configured to inspect and analyze atomic emission of an analyte, a semiconductor manufacturing facility including the AES, and a method of manufacturing a semiconductor device using the AES.
- AES atomic emission spectrometer
- a spectrometer may be a device configured to measure spectrum of light emitted by or absorbed into a material.
- the spectrometer may resolve electromagnetic waves (EMWs) according to a difference in wavelength, and measure an intensity distribution of the EMW to obtain information regarding arrangements of electrons and atomic nuclei in an analyte and motion of the analyte.
- the spectrometer may measure and analyze an emission spectrum to detect specific elements in the analyte.
- Spectrometers may include, for example, an interference spectrometer, a grating spectrometer, and a prism spectrometer.
- the interference spectrometer may be a device configured to cause many rays of light to interfere with one another.
- a typical example of the interference spectrometer may be a Fabry-Perot interferometer.
- the grating spectrometer which is a spectrometer using diffraction gratings, may be suitable for infrared (IR) or ultraviolet (UV) spectroscopy because the grating spectrometer is highly capable of separating light having close wavelengths, and does not cause absorption of light into glass.
- the prism spectrometer which has been widely used from the past, may include a collimator, a prism, and a camera.
- the exemplary embodiments of the inventive concept provide an atomic emission spectrometer (AES), which may be downscaled with high detection intensity, a semiconductor manufacturing facility including the AES, and a method of manufacturing a semiconductor device using the AES.
- AES atomic emission spectrometer
- a laser-induced plasma (LIP)-based AES which may include: at least one laser generator configured to generate laser beams; a chamber including an elliptical or spherical mirror disposed inside the chamber and configured to reflect the laser beams transmitted into the chamber so that the laser beams are condensed and irradiated on an analyte contained in the chamber to generate plasma and emit plasma light; a supplier connected to the chamber to supply the analyte into the chamber; and a spectrometer configured to receive and analyze the plasma light, and obtain data regarding the plasma light to detect elements in the analyte.
- LIP laser-induced plasma
- an LIP-based AES which may include: a chamber configured to receive an analyte; at least one laser generator configured to generate laser beams; an optics comprising a focal optics through which the laser beams are transmitted onto a condensing point formed inside the chamber to generate plasma; a supplier connected to the chamber to supply the analyte into the chamber; and a spectrometer configured to receive and analyze plasma light from the plasma, and obtain data regarding the plasma light to detect elements in the analyte.
- a semiconductor manufacturing system which may include: a chemical storage configured to store a chemical used for at least one of processes including cleaning, lithography, etching, oxidation, diffusion and deposition, and polishing; at least one chamber configured to receive the chemical which is applied to a semiconductor for performing the at least one process; a chemical supplier configured to supply the chemical into the at least one chamber for the at least one process; and the AES configured to receive the chemical comprising the analyte and analyse the analyte.
- a method of manufacturing a semiconductor device may include: storing a chemical used for at least one of processes comprising cleaning, lithography, etching, oxidation, diffusion, deposition, and polishing; supplying analyte comprising a part of the chemical into an AES for analyzing the analyte; and supplying the chemical into at least one chamber for performing the at least one process according to a result of the analyzing the analyte.
- the analyzing the analyte by the AES may include: supplying the analyte into a chamber of the AES; applying laser beams into the chamber so that the laser beams are reflected by a mirror disposed in the chamber to be condensed and irradiated on the analyte to generate plasma and emit plasma light therefrom; and controlling the plasma light to emit out to a spectrometer which analyzes the plasma light.
- FIG. 1 is a schematic block diagram of a structure of a laser-induced plasma (LIP)-based atomic emission spectrometer (AES) according to an exemplary embodiment
- FIG. 2A is a detailed block diagram of a structure of an input optics in the LIP-based AES of FIG. 1 , according to an exemplary embodiment
- FIG. 2B is a perspective view of a chamber according to an exemplary embodiment
- FIG. 2C is a detailed block diagram of a structure of spectrometer according to an exemplary embodiment
- FIGS. 3 to 5 are schematic block diagrams of structures of LIP-based AESs according to exemplary embodiments
- FIG. 6A is a schematic block diagram of a structure of an LIP-based AES according to an exemplary embodiment
- FIG. 6B is a detailed perspective view of a condensing mirror according to an exemplary embodiment
- FIG. 7A is a schematic block diagram of a structure of an LIP-based AES according to an exemplary embodiment
- FIG. 7B is a detailed block diagram of a portion of a droplet forming device according to an exemplary embodiment
- FIG. 8 is a schematic block diagram of a structure of an LIP-based AES according to an exemplary embodiment
- FIG. 9 is a schematic block diagram of a structure of a semiconductor manufacturing facility including an LIP-based AES according to an exemplary embodiment
- FIG. 10 is a flowchart of a process of analyzing an analyte by using an LIP-based AES according to an exemplary embodiment.
- FIG. 11 is a flowchart of a method of manufacturing a semiconductor device by using an LIP-based AES according to an exemplary embodiment.
- first, second, third, fourth etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present inventive concept.
- spatially relative terms such as “beneath,” “below,” “lower,” “over,” “above,” “upper” and the like, may be used herein for ease of description to describe one element's or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
- Exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized exemplary embodiments (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region.
- a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place.
- the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present inventive concept.
- FIG. 1 is a schematic block diagram of a structure of a laser-induced plasma (LIP)-based atomic emission spectrometer 1000 according to an exemplary embodiment.
- LIP laser-induced plasma
- the LIP-based atomic emission spectrometer 1000 of the present embodiment may include a laser generation unit 100 , a chamber 200 , a spectrometer 300 , and an input optics 400 .
- the LIP-based atomic emission spectrometer 1000 of the present embodiment may generate plasma by using laser beams, receive plasma light from plasma, obtain and analyze an emission spectrum, and detect ultratrace elements.
- Plasma may refer to an aggregate of particles, which are separated into electrons, positively charged ions, and neutral radicals at ultrahigh temperatures. In a plasma state, the electrons may be relaxed from an excited state to a ground state to emit light (i.e., plasma light).
- an ‘LIP-based atomic emission spectrometer’ will be simply referred to as an ‘atomic emission spectrometer’ for brevity.
- the atomic emission spectrometer 1000 may also be referred to as an AES or an optical emission spectrometer (OES).
- the laser generation unit 100 may include a first laser generator 110 and a second laser generator 120 . In some embodiments, the laser generation unit 100 may include only the first laser generator 110 .
- the first laser generator 110 may be a pulse laser generator.
- the first laser generator 110 may generate pulse laser beams, for example, visible pulse laser beams.
- the pulse laser beams generated by the first laser generator 110 are not limited to visible pulse laser beams.
- the pulse laser beams generated by the first laser generator 110 may have various wavelengths, such as an infrared ray wavelength and an ultraviolet ray wavelength.
- Pulse laser beams from the first laser generator 110 may have a very high peak power.
- the pulse laser beams from the first laser generator 110 may be incident into the chamber 200 and have such a peak power as to be capable of igniting plasma.
- the pulse laser beams from the first laser generator 110 may be continuously incident to the chamber 200 while plasma is maintained from the moment in which the plasma is ignited.
- the pulse laser beams from the first laser generator 110 may be used only for plasma ignition, and thus incident to the chamber 200 only during a short time duration for which plasma is ignited.
- the second laser generator 120 may be a continuous wave (CW) laser generator.
- the second laser generator 120 may generate CW laser beams, for example, infrared ray (IR) CW laser beams.
- IR infrared ray
- the CW laser beams generated by the second laser generator 120 are not limited to IR CW laser beams.
- the CW laser beams from the second laser generator 120 may be incident to the chamber 200 and maintain the inside of the chamber 200 at high temperatures before plasma ignition. Also, after the plasma ignition, the CW laser beams from the second laser generator 120 may be used to maintain plasma or increase the intensity of plasma. Thus, the incidence of the CW laser beams from the second laser generator 120 to the chamber 200 may begin before plasma ignition and continue while plasma is maintained. In some embodiments, the CW laser beams from the second laser generator 120 may be incident to the chamber 200 after plasma ignition.
- the chamber 200 may be a container in which a gaseous or liquid analyte is contained and plasma is generated.
- a gaseous or liquid analyte is contained and plasma is generated.
- laser beams may be irradiated to an analyte in the chamber 200 to generate plasma, and plasma light from the plasma may be emitted out of the chamber 200 .
- the chamber 200 may include a body 210 , an elliptical mirror 220 , and a window 230 .
- the body 210 may define a reaction space in which plasma is generated, and isolate the reaction space from the outside.
- the body 210 may typically include a metal material and be maintained in a ground state to block noise from the outside during a plasma process.
- An insulating liner may be located inside the body 210 .
- the insulating liner may protect the body 210 and prevent occurrence of arcing in the chamber 200 .
- the insulating liner may include ceramic or quartz.
- the elliptical mirror 220 may be located at an inner side surface of the body 210 and include a material capable of reflecting laser beams and plasma light.
- an inner portion of the elliptical mirror 220 may include a material, such as Pyrex or quartz, and an outer portion of the elliptical mirror 220 may include a metal material.
- the elliptical mirror 220 may be optically coated to reflect only light of a required wavelength band.
- the elliptical mirror 220 may condense incident light on a focal position, reflect light generated at the focal position, and output the reflected light out of the chamber 200 .
- the elliptical mirror 220 may have two foci and conform to the law of reflection by which light from any one of the two foci is reflected by the elliptical mirror 220 and travels toward the other one of the two foci.
- laser beams may be reflected by the elliptical mirror 220 and condensed on a condensing point in the chamber 200 , for example, a focus F of the elliptical mirror 220 .
- plasma light from plasma generated at a position of the focus F of the elliptical mirror 220 may be reflected by the elliptical mirror 220 and emitted out of the chamber 200 .
- the elliptical mirror 220 may increase efficiency of input of laser beams to the chamber 200 and efficiency of output of plasma light from the chamber 200 .
- the window 230 may be a kind of path through which laser beams are incident to the chamber 200 and plasma light is emitted from the chamber 200 .
- the window 230 may have a flat panel shape and include a light-transmissive material, for example, quartz or glass.
- a nebulizer 250 configured to supply an analyte may be installed in the chamber 200 .
- the nebulizer 250 may vaporize a liquid-state analyte Ca and supply the vaporized liquid-state analyte Ca into the chamber 200 .
- the nebulizer 250 may supply carrier gas Cg along with the vaporized analyte into the chamber 200 .
- the carrier gas Cg may be, for example, argon (Ar) gas.
- Argon gas may be an inert gas, which is a kind of gaseous solvent, and contribute toward generating plasma more easily.
- the liquid-state analyte Ca may be supplied through a first supply line P 1 to the nebulizer 250 and vaporized.
- the carrier gas Cg may be supplied through a second supply line P 2 to the nebulizer 250 .
- the nebulizer 250 may supply the vaporized analyte Ca and the carrier gas Cg together through a third supply line P 3 to the chamber 200 .
- a fourth supply line P 4 may be located at an opposite side of the third supply line P 3 , and gases remaining in the chamber 200 may be discharged through a fourth supply line P 4 .
- FIG. 1 illustrates an example in which the nebulizer 250 and the first to third supply lines P 1 , P 2 , and P 3 connected thereto are located in a lower portion of the chamber 200 and the fourth supply line P 4 is located in an upper portion of the chamber 200
- positions of the nebulizer 250 and the first to fourth supply lines P 1 , P 2 , P 3 , and P 4 are not limited thereto.
- the nebulizer 250 and the first to third supply lines P 1 , P 2 , and P 3 connected thereto may be located in the upper portion of the chamber 200 or at a side surface of the chamber 200 .
- the fourth supply line P 4 may be located at a bottom surface or a side surface of the chamber 200 .
- the nebulizer 250 and the first to third supply lines P 1 , P 2 , and P 3 connected thereto and the fourth supply line P 4 may be located at the side surfaces of the chamber 200 to the exclusion of a position in which the elliptical mirror 220 or the window 230 is located.
- the spectrometer 300 may receive plasma light emitted from the chamber 200 , split and resolve the plasma light, and obtain an emission spectrum. Ultratrace elements included in the analyte may be detected based on the emission spectrum obtained by the spectrometer 300 .
- the spectrometer 300 will be described below in further detail with reference to FIG. 2C .
- the input optics 400 may serve to allow laser beams from the laser generation unit 100 to be incident to the chamber 200 and allow plasma light from the chamber 200 to be emitted to the spectrometer 300 .
- the input optics 400 may include a first dichroic mirror 410 , a focal optics 420 , and a second dichroic mirror 430 .
- the first dichroic mirror 410 may reflect pulse laser beams from the first laser generator 110 toward the chamber 200 and transmit CW laser beams from the second laser generator 120 toward the chamber 200 .
- the first dichroic mirror 410 may be located in a direction in which pulse laser beams are emitted from the first laser generator 110 and CW laser beams are emitted from the second laser generator 120 .
- the first dichroic mirror 410 may be located so that the first laser generator 110 and the second laser generator 120 may maintain a predetermined angle in consideration of reflection and transmission characteristics.
- the first laser generator 110 and the second laser generator 120 may be located to maintain an angle of about 90° with the first dichroic mirror 410 as a vertex.
- the first dichroic mirror 410 may be located at an inclination of substantially 45° with respect to each of a direction in which pulse laser beams from the first laser generator 110 travel and a direction in which CW laser beams from the second laser generator 120 travel. In some embodiments, an angle at which the first laser generator 110 and the second laser generator 120 are located may be changed. In this case, an inclination of the first dichroic mirror 410 may be changed.
- materials included in the first dichroic mirror 410 may be changed so that the first dichroic mirror 410 may transmit pulse laser beams from the first laser generator 110 and reflect CW laser beams from the second laser generator 120 .
- the first laser generator 110 may be located at a left front end of the first dichroic mirror 410
- the second laser generator 120 may be located at a lower end of the first dichroic mirror 410 .
- the second dichroic mirror 430 may be located at a left front end of the window 230 of the chamber 200 . Through the second dichroic mirror 430 , both the pulse laser beams from the first laser generator 110 and the CW laser beams from the second laser generator 120 are transmitted toward the chamber 200 . Also, the second dichroic mirror 430 may reflect plasma light emitted from the chamber 200 toward the spectrometer 300 . More specifically, plasma light may be directly emitted from the chamber 200 through the window 230 and reflected by the second dichroic mirror 430 toward the spectrometer 300 . Also, plasma light may be firstly reflected by the elliptical mirror 220 , emitted through the window 230 , and reflected by the second dichroic mirror 430 toward the spectrometer 300 .
- FIG. 1 illustrates an example in which plasma light emitted from the chamber 200 is reflected by the second dichroic mirror 430 and travels upward
- a direction in which plasma light reflected by the second dichroic mirror 430 travels is not limited to an upward direction.
- an angle at which the second dichroic mirror 430 is located may be controlled so that plasma light may travel downward or sideward.
- the spectrometer 300 may be located in a direction in which plasma light travels.
- a homogenizer which is an optical device configured to spatially uniformize light, may be located between the spectrometer 300 and the second dichroic mirror 430 .
- the focal optics 420 may condense pulse laser beams from the first laser generator 110 and CW laser beams from the second laser generator 120 on one point, for example, a focal position of the elliptical mirror 220 .
- the focal optics 420 may include, for example, a convex lens.
- the focal optics 420 may further include a lens configured to convert laser beams into ring-shaped beams and a lens configured to compensate for aberration.
- the focal optics 420 will be described below in further detail with reference to FIG. 2A .
- the AES 1000 may generate plasma by using laser beams, for example, pulse laser beams, and emit plasma light from the plasma.
- the AES 1000 of the present embodiment may condense laser beams and emit plasma light by using the elliptical mirror 220 located in the chamber 200 , thereby greatly increasing input efficiency of laser beams and output efficiency of plasma light from the chamber 200 .
- the AES 1000 of the present embodiment may be downscaled based on LIP and increase output efficiency of plasma light based on the above-described condensing structure of the chamber 200 . As a result, detection intensity may increase, and analysis reliability may improve.
- typical AESs may use Flame, inductively coupled plasma (ICP), microwave-induced plasma (MIP), direct current plasma (DCP), electric spark/arc, or LIP.
- ICP inductively coupled plasma
- MIP microwave-induced plasma
- DCP direct current plasma
- electric spark/arc or LIP
- plasma generated by Flame, ICP, MIP, or DCP has a large size
- electric spark/arc or LIP is capable of generating plasma with a fine size, it may be possible to downscale AESs, but detection intensity may be low and quantitative analysis may be difficult.
- the AES 1000 of the present embodiment is based on LIP, the AES 1000 may be downscaled.
- the elliptical mirror 220 is included in the chamber 200 , the intensity of plasma light may increase and thus, detection intensity may increase, thereby solving problems of the typical AESs.
- FIG. 2A is a detailed block diagram of a structure of an input optics 400 in the LIP-based AES of FIG. 1
- FIG. 2B is a perspective view of a chamber
- FIG. 2C is a detailed block diagram of a structure of spectrometer.
- a focal optics 420 of the input optics 400 may include a pair of axicon lenses 422 , a convex lens 424 , and a cylindrical lens 426 .
- the pair of axicon lenses 422 may convert pulse laser beams from the first laser generator 110 , which are reflected by the first dichroic mirror 410 , and CW laser beams from the second laser generator 120 , which are transmitted through the first dichroic mirror 410 , into ring-shaped beams.
- the ring-shaped beams may refer to beams distributed in the form of donuts or circular rings on a section perpendicular to a direction in which light travels.
- the ring-shaped beams may be formed by using devices (e.g., a spatial light modulator (SLM)) other than the axicon lenses 422 .
- the pair of axicon lenses 422 may be omitted. In this case, the laser beams may be directly incident to the convex lens 424 and condensed.
- the convex lens 424 may serve to condense incident light. For example, when ring-shaped beams are incident to the convex lens 424 , the ring-shaped beams may be condensed by the convex lens 424 and reduced to nearly a point at a focal position. Meanwhile, as shown in FIG. 2A , light incident to the convex lens 424 may be condensed on a second focus F 2 of an elliptical mirror 220 . The condensed light may continuously proceed to the elliptical mirror 220 and be reflected by the elliptical mirror 220 and condensed and irradiated to a first focus F 1 .
- laser beams from the first laser generator 110 and the second laser generator 120 may be converted into ring-shaped beams through the pair of axicon lenses 422 and then condensed again on a condensing point in the chamber 200 (e.g., a focus of the elliptical mirror 220 ) through the convex lens 424 and the elliptical mirror 220 .
- the cylindrical lens 426 may be located at a right side of the convex lens 424 . In some embodiments, when the influence of the aberration is immaterial, the cylindrical lens 426 may be omitted.
- a body 210 of the chamber 200 may have a generally hexahedral structure.
- a rear end portion of the body 210 of the chamber 200 may have an outwardly protruding curved shape corresponding to a shape of the elliptical mirror 220 located in the chamber 200 .
- a shape of the body 210 of the chamber 200 is not limited thereto.
- an outer surface of the body 210 may have a substantially hexahedral structure, and only an inner portion of the body 210 may have a curved shape corresponding to the elliptical mirror 220 .
- the body 210 may have a dome structure roundly surrounding side surfaces of the protruding curved portion. Meanwhile, an exit Ex to which laser beams are incident and from which plasma light is emitted may be formed in a front end surface of the body 210 of the chamber 200 .
- the window (refer to 230 in FIG. 1 ) may be located at the exit Ex.
- the chamber 200 may be manufactured to be relatively small-sized.
- each of a length L, width W, and height H of the chamber 200 may range from several mm to several tens of mm.
- the chamber 200 may be easily located in a process system or at supply lines configured to supply a chemical to the process system during a semiconductor process.
- the chemical may be analyzed in real-time or periodically during the semiconductor process.
- the chamber 200 adopts a structure including the elliptical mirror 220 , input efficiency of laser beams and output efficiency of plasma light may be maximized, thereby increasing detection intensity and improving analysis reliability.
- the chemical may contain liquids and gases and be referred to as a liquid chemical in a semiconductor process.
- a spectrometer 300 may include an incidence aperture 310 , an imaging mirror 320 , a diffraction grating 330 , and an array detector 340 .
- optical fibers may be coupled to the spectrometer 300 , and plasma light may be incident to the spectrometer 300 through the optical fibers.
- plasma light may be incident from the optical fibers to the incidence aperture 310 .
- the plasma light spreading from the incidence aperture 310 may be collected on the imaging mirror 320 to form an image.
- the diffraction grating 330 having a typical plane shape may be located on an optical path, and the array detector 340 may be located at a position where the image is formed.
- the plasma light may be split and resolved so that an image of the incidence aperture 310 may be formed at another position of the array detector 340 according to a wavelength.
- the array detector 340 may be embodied by a charge-coupled device (CCD).
- a spectrometer having another structure may include, instead of an imaging mirror, a collimating mirror configured to collimate light emitted from an incidence aperture and allow the collimated light to travel toward a diffraction grating and a condensing mirror configured to condense light split and resolved by the diffraction grating and allow the condensed light to travel toward an array detector, and an order sorting filter located at a front end of the array detector.
- Data regarding split/resolved light received by the array detector 340 of the spectrometer 300 may be transmitted to an analyzer (not shown) and used to detect elements in an analyte.
- the optical fibers may not be coupled to the spectrometer 300 .
- plasma light reflected by the second dichroic mirror 430 may be directly incident to the spectrometer 300 or incident to the spectrometer 300 through a condensing mirror (not shown) at a front end of the spectrometer 300 .
- FIGS. 3 to 5 are schematic block diagrams of structures of LIP-based AESs according to exemplary embodiments. The same descriptions as in FIGS. 1 to 2C will be simplified or omitted for brevity.
- an AES 1000 a according to the present embodiment may differ from the AES 1000 of FIG. 1 in terms of a structure of an input optics 400 a .
- the input optics 400 a may include a first dichroic mirror 410 , a focal optics 420 , a second dichroic mirror 430 , and an additional input optics 440 .
- the first dichroic mirror 410 and the second dichroic mirror 430 of the AES 1000 a may be the same as those of the AES 1000 of FIG. 1 in that the first dichroic mirror 410 reflects pulse laser beams from the first laser generator 110 and transmits CW laser beams from the second laser generator 120 , and the second dichroic mirror 430 transmits both the pulse laser beams from the first laser generator 110 and the CW laser beams from the second laser generator 12 , and reflects plasma light.
- a focal optics may not be provided between the first dichroic mirror 410 and the second dichroic mirror 430 .
- the focal optics 420 of the AES 1000 a may be the same as the focal optics 420 of the AES 1000 of FIG. 1 except that the focal optics 420 of the AES 1000 a is located at a left side of the first dichroic mirror 410 , and allows CW laser beams from the second laser generator 120 to be condensed on a left portion of the first dichroic mirror 410 .
- a point on which the CW laser beams are condensed by the focal optics 420 may be a second focus F 2 of the elliptical mirror 220 .
- the additional input optics 440 may be an optics configured to allow pulse laser beams from the first laser generator 110 to be incident to the first dichroic mirror 410 .
- the additional input optics 440 may be located at a lower end of the first dichroic mirror 410 .
- the additional input optics 440 may include a pair of axicon lenses 442 and a concave lens 444 .
- the pair of axicon lenses 442 may convert laser beams from the first laser generator 110 into ring-shaped beams. Ring-shaped beams may be formed by using an SLM instead of the pair of axicon lenses 442 .
- the pair of axicon lenses 442 may be omitted.
- the concave lens 444 may serve to expand incident light. For example, when ring-shaped beams are incident to the concave lens 444 , an inner radius, outer radius, and width of a ring shape may increase so that the ring shape may entirely expand.
- the additional input optics 440 may serve to convert the pulse laser beams from the first laser generator 110 into ring-shaped beams, expand the ring-shaped beams, and allow the expanded ring-shaped beams to be incident to the first dichroic mirror 410 .
- the concave lens 444 may make light appear to expand from one point.
- the concave lens 444 and the first dichroic mirror 410 may make laser beams appear to be emitted from the second focus F 2 of the elliptical mirror 220 .
- a cylindrical lens may be located over the concave lens 444 to compensate for aberration. However, when the influence of aberration is immaterial, the cylindrical lens may be omitted.
- an AES 1000 b may differ from the AES 1000 of FIG. 1 in terms of a structure of a chamber 200 a and a structure of an input optics 400 b .
- a spherical mirror 220 a may be located in the chamber 200 a .
- Incident light parallel to an optical axis may be reflected by the spherical mirror and travel to a focus located on the optical axis.
- Incident light passing through the focus may be reflected by the spherical mirror and travel parallel to the optical axis.
- incident light passing through a center of the spherical mirror may be reflected by the spherical mirror and travel to the center of the spherical mirror again.
- the input optics 400 b may include a beam collimating optics 420 a instead of the focal optics 420 .
- the beam collimating optics 420 a may be embodied by, for example, omitting the convex lens 424 from the focal optics 420 of the AES 1000 of FIG. 1 .
- the convex 424 is omitted, ring-shaped beams may be transmitted as collimating beams through the second dichroic mirror 430 and incident to the chamber 200 .
- a collimating lens may be used instead of the pair of axicon lenses (refer to 422 in FIG. 2A ) to obtain typical collimating beams.
- Plasma light from the focus F of the spherical mirror 220 a may be reflected by the spherical mirror 220 a , emitted in the form of collimating light, and reflected by the second dichroic mirror 430 and travel toward the spectrometer 300 . Even if reflected by the second dichroic mirror 430 , the collimating light may still remain collimated. Accordingly, an output condensing optics 450 may be further located between the second dichroic mirror 430 and the spectrometer 300 in order to condense plasma light reflected by the second dichroic mirror 430 .
- the output condensing optics 450 may be, for example, a convex lens. However, a component included in the output condensing optics 450 is not limited to the convex lens.
- the output condensing optics 450 may further include optical devices configured to condense light.
- the chamber 200 a may include the spherical mirror 220 a and adopt an input optics corresponding to the spherical mirror 220 a , thereby increasing input efficiency of laser beams and output efficiency of plasma light.
- the AES 100 b of the present embodiment may increase detection intensity to improve analysis reliability.
- AESs 1000 b may be installed in various positions in a semiconductor manufacturing facility so that a chemical may be analyzed in real-time or periodically during a semiconductor process.
- an AES 1000 c of the present embodiment may differ from the AES 1000 of FIG. 1 in a structure of a chamber 200 b and a structure of an input optics 400 c .
- a first laser generator 110 may be located at a right side of the chamber 200 b , and pulse laser beams from the first laser generator 110 may be directly irradiated to a focus F of an elliptical mirror 220 b of the chamber 200 b through an input window 232 .
- the focus F may be located in a central portion of the elliptical mirror 220 b.
- An additional input optics 440 a may be located at a left side of the first laser generator 110 so that the pulse laser beams from the first laser generator 110 may be condensed on the focus F of the elliptical mirror 220 b .
- the additional input optics 440 a may include a convex lens.
- the additional input optics 440 a may further include a pair of axicon lenses to generate ring-shaped beams.
- the input window 232 may transmit or reflect light according to a wavelength, unlike a window 230 located at a front side of the chamber 200 b .
- the input window 232 may reflect and cut off plasma light and transmit pulse laser beams. Thus, leakage of plasma light may be prevented by the input window 232 .
- the input optics 400 c may not include a first dichroic mirror.
- the AES 1000 of FIG. 1 may adopt the first dichroic mirror 410 so that pulse laser beams from the first laser generator 110 and CW laser beams from the second laser generator 120 may be incident to the chamber 200 in the same direction.
- the AES 1000 c of the present embodiment does not need to adopt the first dichroic mirror because pulse laser beams from the first laser generator 110 are incident to the chamber 200 b in an opposite direction to a direction in which CW laser beams from the second laser generator 120 are incident to the chamber 200 b .
- the CW laser beams from the second laser generator 120 may be incident to the chamber 200 b through a focal optics 420 , a second dichroic mirror 430 , and the window 230 .
- the additional input optics 440 a may be included in the input optics 400 c.
- FIG. 6A is a schematic block diagram of a structure of an LIP-based AES according to an exemplary embodiment
- FIG. 6B is a detailed perspective view of a condensing mirror. The same descriptions as in FIGS. 1 to 5 will be simplified or omitted for brevity.
- an AES 1000 d according to the present embodiment may differ from the AES 1000 of FIG. 1 in terms of a structure of a chamber 200 c .
- the chamber 200 c may include a condensing mirror 220 c into which an elliptical mirror 220 - 1 and a spherical mirror 220 - 2 are merged.
- the condensing mirror 220 c may serve to reflect plasma light generated at a focus and uniformize an angular intensity distribution of light.
- the elliptical mirror 220 - 1 may reflect plasma light and condense the plasma light on a position of a second focus F 2 (e.g., an incidence surface of a spectrometer 300 ).
- a second focus F 2 e.g., an incidence surface of a spectrometer 300
- the intensity of spatial light at the incidence surface of the spectrometer 300 may have a Gaussian distribution so that an angular intensity distribution of plasma light may be non-uniform.
- the position of the second focus F 2 may correspond to an incidence surface of the optical fibers in a strict sense. If a homogenizer is located at a front end of the spectrometer 300 , an incidence surface of the homogenizer may correspond to the position of the second focus F 2 .
- light reflected by a central portion of the elliptical mirror 220 - 1 may have the highest intensity, and light intensity may be continuously reduced toward an outer portion of the elliptical mirror 220 - 1 .
- light intensity may be greatly dependent on an incidence angle.
- Characteristics of the elliptical mirror 220 - 1 may be determined by a focus of the elliptical mirror 220 - 1 .
- the amount of plasma light condensed by the elliptical mirror 220 - 1 may increase as a ratio of L 2 to L 1 becomes higher.
- the first focus F 1 may become more adjacent to the elliptical mirror 220 - 1 .
- a larger amount of plasma light may be reflected by the elliptical mirror 220 - 1 .
- a size of a condensing spot at the second focus F 2 on which light reflected by the elliptical mirror 220 - 1 is condensed may increase by L 2 /L 1 times. Accordingly, as the ratio of L 2 to L 1 increases, the size of the condensing spot may increase and thus, efficiency of coupling of plasma light with the spectrometer 300 may be reduced. Also, since the intensity of light reflected by the outer portion of the elliptical mirror 220 - 1 is weak, light intensity may become non-uniform according to an angle. That is, an angular intensity distribution of light may be non-uniform.
- the angle may refer to an angle (e.g., a solid angle), which may increase away from a center of a concentric circle on a section perpendicular to a direction in which light proceeds.
- a value of L 2 /L 1 may be reduced so that a small condensing spot may be formed.
- efficiency of coupling of plasma light with the spectrometer 300 may increase, and uniformity of an intensity distribution of light relative to an angle may improve.
- the ratio of L 2 to L 1 is reduced, the amount of light that may be condensed by the elliptical mirror 220 - 1 may be reduced as described above. Thus, use efficiency of light may be reduced.
- the AES 1000 d may adopt the condensing mirror 220 c into which the elliptical mirror 220 - 1 and the spherical mirror 220 - 2 are combined.
- a structure of the condensing mirror 220 c will now be described in further detail.
- the spherical mirror 220 - 2 may surround an open portion of the elliptical mirror 220 - 1 and have an open structure on the left.
- FIG. 6A when the elliptical mirror 220 - 1 has an open structure on the left, the spherical mirror 220 - 2 may surround an open portion of the elliptical mirror 220 - 1 and have an open structure on the left.
- a diameter of a side of the spherical mirror 220 - 2 toward the elliptical mirror 220 - 1 may be greater than a diameter of an open side of the spherical mirror 220 - 2 .
- the diameter of the side of the spherical mirror 220 - 2 toward the elliptical mirror 200 - 1 may be greater than a diameter of the open portion of the elliptical mirror 220 - 1 .
- the open side of the spherical mirror 220 - 2 may have such a diameter as to allow light reflected by the elliptical mirror 200 - 1 to pass therethrough without blocking.
- the diameter of the open side of the spherical mirror 220 - 2 may be greater than the diameter of the open portion of the elliptical mirror 220 - 1 .
- the elliptical mirror 220 - 1 and the spherical mirror 220 - 2 may have the same focal position or different focal positions.
- light deviating from the elliptical mirror 220 - 1 may be reflected by the spherical mirror 220 - 2 and travel toward the elliptical mirror 220 - 1 .
- the reflected light may be reflected by the elliptical mirror 220 - 1 again, condensed on the position of the second focus F 2 , and emitted to increase the amount of reflection of light and use efficiency of light.
- the condensing mirror 220 c may uniformize an angular intensity distribution of light.
- the chamber 200 c may include the condensing mirror 220 c including a combination of the elliptical mirror 220 - 1 and the spherical mirror 220 - 2 .
- the condensing mirror 220 c including a combination of the elliptical mirror 220 - 1 and the spherical mirror 220 - 2 .
- the intensity of plasma light in the outer portion of the elliptical mirror 220 - 1 may be increased to uniformize an angular intensity distribution of light.
- FIG. 7A is a schematic block diagram of a structure of an LIP-based AES according to an exemplary embodiment
- FIG. 7B is a detailed block diagram of a portion of a droplet forming device.
- the same descriptions as in FIGS. 1 to 2C will be simplified or omitted for brevity.
- an AES 1000 e of the present embodiment may greatly differ from the AES 1000 of FIG. 1 in that a chamber 200 d does not include a mirror configured to condense light and a droplet forming device 270 is used as a device configured to supply an analyte.
- a laser generation unit 100 and a spectrometer 300 may be the same as the laser generation unit 100 and the spectrometer 300 included in the AES 1000 of FIG. 1 .
- An input optics 400 d may include a first dichroic mirror 410 and a focal optics 420 but not include a second dichroic mirror. Since a condensing mirror is not located in the chamber 200 d , the focal optics 420 may allow pulse laser beams from a first laser generator 110 and CW laser beams from a second laser generator 120 to be directly condensed and irradiated to a point at which plasma is to be generated in the chamber 200 d .
- the focal optics 420 may include a convex lens.
- the focal optics 420 may further include a pair of axicon lenses to convert laser beams into ring-shaped beams.
- the chamber 200 d may include a body 210 a , a first window 230 a , and a second window 234 .
- the body 210 a may have a hexahedral structure.
- a structure of the body 210 a is not limited to the hexahedral structure.
- the body 210 a may have a cylindrical structure. Materials or characteristics of the body 210 a may be the same as those of the body 210 of the chamber 200 included in the AES 1000 of FIG. 1 .
- the first window 230 a may be located at a left side surface of the chamber 200 d to which laser beams are incident, and serve to transmit or reflect light according to a wavelength.
- the first window 230 a may allow pulse laser beams from the first laser generator 110 and CW laser beams from the second laser generator 120 to be transmitted therethrough and incident to the chamber 200 d .
- the first window 230 a may reflect and cut off plasma light generated in the chamber 200 d.
- the second window 234 may be located at a right side surface from which plasma light is emitted and also, serve to transmit or reflect light according to a wavelength.
- the second window 234 may reflect and cut off laser beams incident to the chamber 200 d , and transmit and emit plasma light generated in the chamber 200 d.
- An output condensing optics 450 may be located between the second window 234 and the spectrometer 300 .
- the output condensing optics 450 may condense plasma light emitted through the second window 234 toward the spectrometer 300 .
- the output condensing optics 450 may be, for example, a convex lens.
- a component included in the output condensing optics 450 is not limited to the convex lens.
- the output condensing optics 450 may further include optical devices configured to condense light.
- an analyte Ca which is in a liquid state, may pass through the droplet forming device 270 and be supplied in a droplet state to the chamber 200 d .
- the liquid-state analyte Ca may be supplied through a first supply line P 1 into a temporary storage unit 275 of the droplet forming device 270 .
- the analyte Ca may be controlled and put into a droplet state having a predetermined size and supplied through a second supply line P 2 into the chamber 200 d .
- a carrier gas such as argon (Ar) may be supplied through another supply line (not shown) into the chamber 200 d .
- liquids or gases remaining in the chamber 200 may be discharged through a third supply line P 3 located in a lower portion of the chamber 200 d .
- the nebulizer 250 since the nebulizer 250 vaporizes an analyte and supplies the vaporized analyte into the chamber 200 , the nebulizer 250 may be installed anywhere in the chamber 200 .
- the droplet forming device 270 since the droplet forming device 270 supplies an analyte in a liquid state (i.e., a droplet state) into the chamber 200 , the droplet forming device 270 may be located in an upper portion of the chamber 200 e so that droplets may fall under the influence of gravity.
- the droplet forming device 270 may be, for example, embodied by an inkjet device. However, a device embodying the droplet forming device 270 is not limited to the inkjet device. The droplet forming device 270 will be described below in further detail with reference to FIG. 7B .
- the droplet forming device 270 may include a first supply line P 1 , a temporary storage unit 275 , and a second supply line P 2 .
- the temporary storage unit 275 may be connected to the first supply line P 1 , receive an analyte through the first supply line P 1 and contain the analyte.
- the analyte stored in the temporary storage unit 275 may be sprayed in a droplet state through a nozzle of an end of the second supply line P 2 .
- the temporary storage unit 275 and the second supply line P 2 including the nozzle may correspond to a head portion of the droplet forming device 270 .
- the droplet forming device 270 may further include an actuator 272 configured to control an ejection amount of droplets, a voltage supply unit 274 , a measuring unit 276 , and a controller 278 .
- the actuator 272 may be installed at a nozzle of the second supply line P 2 and provide driving force for allowing the nozzle to spray droplets.
- the actuator 272 may allow ink contained in the nozzle to be ejected in a droplet state due to a spray mechanism that contracts and relaxes the nozzle.
- the spray mechanism due to the actuator 272 may use a piezo method or a thermal method of applying pressure or heat to the nozzle. Therefore, the nozzle may include a material capable of contraction and relaxation due to pressure or heat.
- the spray mechanism due to the actuator 272 or a material included in the nozzle is not limited to the above descriptions.
- the voltage supply unit 274 may supply a voltage to the actuator 272 under the control of the controller 278 .
- the actuator 272 installed at the nozzle of the second supply line P 2 may be electrically connected to the voltage supply unit 274 and generate spray driving force corresponding to a magnitude of the voltage supplied from the voltage supply unit 274 .
- the measuring unit 276 may measure a velocity, area, and volume of each of droplets and transmit the measured values to the controller 278 .
- the controller 278 may determine whether a drop amount of droplets is appropriate based on measured information, control the magnitude of a voltage applied to the nozzle through the voltage supply unit 274 based on the determination result, and control the drop amount of the droplets sprayed via the nozzle.
- the AES 1000 e of the present embodiment may supply an analyte in a droplet state through the droplet forming device 270 to the chamber 200 d so that the size of droplets may be controlled to enable quantitative analysis of the analyte. Also, the AES 1000 e of the present embodiment may irradiate laser beams (e.g., pulse laser beams) to droplets instead of gases so that plasma may be directly generated from the droplets to obtain plasma light having a high intensity. As a result, detection intensity may increase, and analysis reliability may improve.
- laser beams e.g., pulse laser beams
- FIG. 8 is a schematic block diagram of a structure of an LIP-based AES according to an embodiment. The same descriptions as in FIGS. 1 to 2C, 7A, and 7B will be simplified or omitted for brevity.
- an AES 1000 f of the present embodiment may be a combination of the AES 1000 of FIG. 1 and the AES 1000 e of FIG. 7A .
- a laser generation unit 100 , a chamber 200 , a spectrometer 300 , and an input optics 400 may be substantially the same as in the AES 1000 of FIG. 1 .
- an angle at which a second dichroic mirror 430 is located and a position of the spectrometer 300 may be different than in the AES 1000 of FIG. 1 because a droplet forming device 270 is located over the chamber 200 .
- the droplet forming device 270 may be located in various positions over the chamber 200 .
- the second dichroic mirror 430 and the spectrometer 300 may be located in substantially the same positions as in the AES 1000 of FIG. 1 .
- the droplet forming device 270 may be substantially the same as the AES 1000 e of FIG. 7A .
- an analyte may be supplied in a droplet state through the droplet forming device 270 into the chamber 200 .
- the chamber 200 may adopt an elliptical mirror 220 so as to increase input efficiency of laser beams and output efficiency of plasma light.
- the chamber 200 may adopt the droplet forming device 270 as a device configured to supply the analyte.
- the intensity of plasma light may be increased to further increase detection intensity, and a size of droplets may be quantitatively controlled to perform quantitative analysis on the analyte.
- the nebulizer 250 included in each of the AESs 1000 and 1000 a to 1000 d of FIGS. 1, 3, 4, 5, and 6A and the droplet forming device 270 included in each of the AESs 1000 e and 1000 f of FIGS. 7A and 8 have been described above as examples of the device configured to supply the analyte.
- the device configured to supply the analyte is not limited thereto.
- the device configured to supply the analyte may be simply a pipeline-type supply line including a nozzle.
- FIG. 9 is a schematic block diagram of a structure of a semiconductor manufacturing facility 10000 including an LIP-based AES according to an exemplary embodiment. The same descriptions as in FIGS. 1 to 8 will be simplified or omitted for brevity.
- the semiconductor manufacturing facility 10000 may include an AES 1000 , a central chemical supply system 2000 , and a process system 3000 .
- the process system 3000 may be typically referred to as a fab facility
- the central chemical supply system 2000 may be referred to as a sub-fab facility.
- a semiconductor device may be fabricated by using various semiconductor processes, such as a cleaning process, a lithography process, an etching process, an oxidation process, a diffusion process, a deposition process, and chemical and mechanical polishing processes.
- various chemicals may be used in the cleaning, etching, and deposition processes.
- the central chemical supply system 2000 may include a main tank 2100 , a pump 2200 , a first filter 2300 , a supply tank 2400 , and a second filter 2500 .
- the central chemical supply system 2000 may supply a chemical stored in the main tank 2100 through the pump 2200 , the first filter 2300 , the supply tank 2400 , and the second filter 2500 into the process system 3000 so that the semiconductor process may be performed in the process system 3000 .
- the process system 3000 may include a plurality of fabrication apparatuses (hereinafter, “fab apparatuses”) 3100 - 1 to 3100 - n and a valve manifold box (VMB) 3200 .
- Fabric apparatuses fabrication apparatuses
- VMB valve manifold box
- Each of the fab apparatuses 3100 - 1 to 3100 - n may include apparatuses configured to perform the above-described various semiconductor processes.
- the fab apparatuses 3100 - 1 to 3100 - n are apparatuses for a deposition process
- each of the fab apparatuses 3100 - 1 to 3100 - n may include a chamber for the deposition process.
- the VMB 3200 may dividedly supply the chemical from the central chemical supply system 2000 into the respective fab apparatuses 3100 - 1 to 3100 - n.
- the semiconductor manufacturing facility 10000 may include the AES 1000 installed in the chemical supply line and/or the fab apparatuses 3100 - 1 to 3100 - n to detect impurities during a chemical supply process.
- the AES 1000 may do sampling and receive a chemical through a T-branch in the chemical supply line and/or the fab apparatuses 3100 - 1 to 3100 - n .
- the chemical may be supplied through the T-branch to the first supply line (refer to P 1 in FIG. 1 ) and supplied through the nebulizer (refer to 250 in FIG. 1 ) or the droplet forming device (refer to 270 in FIG. 7A ) to the chamber (refer to 200 of FIG. 1 or 200 d of 7 A).
- the semiconductor manufacturing facility 10000 of the present embodiment may, by using the AES 1000 , perform an analysis of elements in real-time or periodically during a semiconductor manufacturing process and inspect impurities in the chemical.
- the AES 1000 may be installed in the chemical supply line. Also, as illustrated with a hatched rectangle and a solid arrow in FIG. 9 , the AES 1000 may be installed in the fab apparatuses 3100 - 1 to 3100 - n . Naturally, positions at which the AESs 1000 are installed are not limited to positions denoted in FIG. 9 . In the semiconductor manufacturing facility 10000 of the present embodiment, the AES 1000 may be the AES 1000 of FIG. 1 . However, the inventive concept is not limited thereto, and the AESs 1000 a to 1000 f of FIGS. 3 to 8 may be applied to the semiconductor manufacturing facility 10000 of the present embodiment.
- FIG. 10 is a flowchart of a process of analyzing an analyte by using an AES according to an exemplary embodiment. The flowchart of FIG. 10 will be described with reference to FIGS. 1 to 2C for brevity.
- an analyte may be supplied into a chamber 200 (S 110 ).
- the analyte may be, for example, a chemical used in a semiconductor manufacturing process.
- the analyte may be supplied in a gaseous state or a droplet state through the nebulizer 250 or the droplet forming device (refer to 270 in FIG. 7A ) into the chamber 200 .
- Laser beams may be incident into the chamber 200 to generate plasma (S 120 ).
- the laser beams may be, for example, pulse laser beams.
- the laser beams may further include CW laser beams.
- the laser beams may be incident through the input optics 400 to the chamber 200 .
- the laser beams may be irradiated through the elliptical mirror 220 included in the chamber 200 and condensed on a position of a focus F of the elliptical mirror 220 .
- Plasma may be generated at the position of the focus F of the elliptical mirror 220 .
- plasma light from the plasma may be directly emitted from the chamber 200 and reflected by the elliptical mirror 220 , and proceed toward the spectrometer 300 through the second dichroic mirror 430 .
- plasma light may be received and analyzed by the spectrometer 300 (S 130 ). More specifically, plasma light may be received, split, and resolved by the spectrometer 300 to obtain an emission spectrum. Peaks of intensities of light on the emission spectrum may be examined to detect elements included in the analyte.
- FIG. 11 is a flowchart of a process of manufacturing a semiconductor device by using an AES 1000 according to an exemplary embodiment.
- the flowchart of FIG. 11 will be described with reference to FIGS. 1 to 2C and 9 , and the same descriptions as in FIG. 10 will be simplified or omitted.
- a chemical for a semiconductor manufacturing process may be supplied into a process system 3000 (S 210 ).
- the chemical may be supplied from a central chemical supply system 2000 into fab apparatuses 3100 - 1 to 3100 - n of the process system 3000 .
- Part of the chemical may be supplied into the AES 1000 (S 220 ).
- Part of the chemical may be supplied through a T-branch in a chemical supply line and/or the fab apparatuses 3100 - 1 to 3100 - n into the AES 1000 .
- the chemical may be supplied through the T-branch to a first supply line P 1 and supplied in a gaseous state through a nebulizer 250 into the chamber 200 .
- the present operation S 220 may correspond to operation S 120 of supplying an analyte in the analysis process of FIG. 10 .
- operation S 230 of generating plasma and operation S 240 of analyzing plasma light may be performed.
- the operations S 230 and S 240 may be respectively the same as the operation S 120 of generating plasma and the operation S 130 of analyzing plasma light in the analysis process of FIG. 10 .
- the semiconductor manufacturing process may be interrupted, and causes may be analyzed. Also, repair and maintenance operations may be performed on the chemical supply line of the central chemical supply system 2000 and/or the fab apparatuses 3100 - 1 to 3100 - n based on the analysis of the causes.
- a semiconductor process may be performed (S 260 ).
- the semiconductor process may be a concept including a semiconductor process using the above-described chemical and a semiconductor process subsequent thereto.
- the semiconductor process may include, for example, a deposition process, an etching process, an ion process, and a cleaning process.
- the semiconductor process may be performed to form integrated circuits (ICs) and interconnections respectively required for semiconductor chips of a wafer.
- the semiconductor process may include a step of supplying a chemical gas into a deposition chamber so that a gate insulating film is formed at a semiconductor device, and also, a step of supplying another chemical gas into an oxidation chamber to form an oxide film over a layer of a semiconductor element. Meanwhile, a process of analyzing a chemical may be performed again in the subsequent semiconductor process.
- the semiconductor process may also include a process of singulating the wafer into respective semiconductor chips, a process of packaging the semiconductor chips, and a process of testing the semiconductor chips or a semiconductor package. Accordingly, operation S 260 may include a concept including a process of manufacturing semiconductor devices as finished products.
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Abstract
Description
- This application claims priority from Korean Patent Application No. 10-2017-0122871, filed on Sep. 22, 2017, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
- Apparatuses and methods consistent with the inventive concept relate to a semiconductor device manufacturing device and a method of manufacturing a semiconductor device, and more particularly, to an atomic emission spectrometer (AES) configured to inspect and analyze atomic emission of an analyte, a semiconductor manufacturing facility including the AES, and a method of manufacturing a semiconductor device using the AES.
- A spectrometer may be a device configured to measure spectrum of light emitted by or absorbed into a material. The spectrometer may resolve electromagnetic waves (EMWs) according to a difference in wavelength, and measure an intensity distribution of the EMW to obtain information regarding arrangements of electrons and atomic nuclei in an analyte and motion of the analyte. In particular, the spectrometer may measure and analyze an emission spectrum to detect specific elements in the analyte. Spectrometers may include, for example, an interference spectrometer, a grating spectrometer, and a prism spectrometer. The interference spectrometer may be a device configured to cause many rays of light to interfere with one another. A typical example of the interference spectrometer may be a Fabry-Perot interferometer. The grating spectrometer, which is a spectrometer using diffraction gratings, may be suitable for infrared (IR) or ultraviolet (UV) spectroscopy because the grating spectrometer is highly capable of separating light having close wavelengths, and does not cause absorption of light into glass. The prism spectrometer, which has been widely used from the past, may include a collimator, a prism, and a camera.
- The exemplary embodiments of the inventive concept provide an atomic emission spectrometer (AES), which may be downscaled with high detection intensity, a semiconductor manufacturing facility including the AES, and a method of manufacturing a semiconductor device using the AES.
- According to an aspect of an exemplary embodiment, there is provided a laser-induced plasma (LIP)-based AES which may include: at least one laser generator configured to generate laser beams; a chamber including an elliptical or spherical mirror disposed inside the chamber and configured to reflect the laser beams transmitted into the chamber so that the laser beams are condensed and irradiated on an analyte contained in the chamber to generate plasma and emit plasma light; a supplier connected to the chamber to supply the analyte into the chamber; and a spectrometer configured to receive and analyze the plasma light, and obtain data regarding the plasma light to detect elements in the analyte.
- According to an aspect of an exemplary embodiment, there is provided an LIP-based AES which may include: a chamber configured to receive an analyte; at least one laser generator configured to generate laser beams; an optics comprising a focal optics through which the laser beams are transmitted onto a condensing point formed inside the chamber to generate plasma; a supplier connected to the chamber to supply the analyte into the chamber; and a spectrometer configured to receive and analyze plasma light from the plasma, and obtain data regarding the plasma light to detect elements in the analyte.
- According to an aspect of an exemplary embodiment, there is provided a semiconductor manufacturing system which may include: a chemical storage configured to store a chemical used for at least one of processes including cleaning, lithography, etching, oxidation, diffusion and deposition, and polishing; at least one chamber configured to receive the chemical which is applied to a semiconductor for performing the at least one process; a chemical supplier configured to supply the chemical into the at least one chamber for the at least one process; and the AES configured to receive the chemical comprising the analyte and analyse the analyte.
- According to an aspect of an exemplary embodiment, there is provided a method of manufacturing a semiconductor device. The method may include: storing a chemical used for at least one of processes comprising cleaning, lithography, etching, oxidation, diffusion, deposition, and polishing; supplying analyte comprising a part of the chemical into an AES for analyzing the analyte; and supplying the chemical into at least one chamber for performing the at least one process according to a result of the analyzing the analyte. Here, the analyzing the analyte by the AES may include: supplying the analyte into a chamber of the AES; applying laser beams into the chamber so that the laser beams are reflected by a mirror disposed in the chamber to be condensed and irradiated on the analyte to generate plasma and emit plasma light therefrom; and controlling the plasma light to emit out to a spectrometer which analyzes the plasma light.
- Embodiments of the inventive concept will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings in which:
-
FIG. 1 is a schematic block diagram of a structure of a laser-induced plasma (LIP)-based atomic emission spectrometer (AES) according to an exemplary embodiment; -
FIG. 2A is a detailed block diagram of a structure of an input optics in the LIP-based AES ofFIG. 1 , according to an exemplary embodiment; -
FIG. 2B is a perspective view of a chamber according to an exemplary embodiment; -
FIG. 2C is a detailed block diagram of a structure of spectrometer according to an exemplary embodiment; -
FIGS. 3 to 5 are schematic block diagrams of structures of LIP-based AESs according to exemplary embodiments; -
FIG. 6A is a schematic block diagram of a structure of an LIP-based AES according to an exemplary embodiment; -
FIG. 6B is a detailed perspective view of a condensing mirror according to an exemplary embodiment; -
FIG. 7A is a schematic block diagram of a structure of an LIP-based AES according to an exemplary embodiment; -
FIG. 7B is a detailed block diagram of a portion of a droplet forming device according to an exemplary embodiment; -
FIG. 8 is a schematic block diagram of a structure of an LIP-based AES according to an exemplary embodiment; -
FIG. 9 is a schematic block diagram of a structure of a semiconductor manufacturing facility including an LIP-based AES according to an exemplary embodiment; -
FIG. 10 is a flowchart of a process of analyzing an analyte by using an LIP-based AES according to an exemplary embodiment; and -
FIG. 11 is a flowchart of a method of manufacturing a semiconductor device by using an LIP-based AES according to an exemplary embodiment. - Various exemplary embodiments of the inventive concept will be described more fully hereinafter with reference to the accompanying drawings. The inventive concept may, however, be embodied in many different forms and should not be construed as limited to the example embodiments set forth herein. Rather, these embodiments are provided so that this description will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity.
- It will be understood that, although the terms first, second, third, fourth etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present inventive concept.
- Spatially relative terms, such as “beneath,” “below,” “lower,” “over,” “above,” “upper” and the like, may be used herein for ease of description to describe one element's or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
- Exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized exemplary embodiments (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present inventive concept.
- Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this inventive concept belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
- Meanwhile, when an exemplary embodiment can be implemented differently, functions or operations described in a particular block may occur in a different way from a flow described in the flowchart. For example, two consecutive blocks may be performed simultaneously, or the blocks may be performed in reverse according to related functions or operations.
-
FIG. 1 is a schematic block diagram of a structure of a laser-induced plasma (LIP)-basedatomic emission spectrometer 1000 according to an exemplary embodiment. - Referring to
FIG. 1 , the LIP-basedatomic emission spectrometer 1000 of the present embodiment may include alaser generation unit 100, achamber 200, aspectrometer 300, and aninput optics 400. As can be seen from the term ‘LIP’, the LIP-basedatomic emission spectrometer 1000 of the present embodiment may generate plasma by using laser beams, receive plasma light from plasma, obtain and analyze an emission spectrum, and detect ultratrace elements. Plasma may refer to an aggregate of particles, which are separated into electrons, positively charged ions, and neutral radicals at ultrahigh temperatures. In a plasma state, the electrons may be relaxed from an excited state to a ground state to emit light (i.e., plasma light). Hereinafter, an ‘LIP-based atomic emission spectrometer’ will be simply referred to as an ‘atomic emission spectrometer’ for brevity. Meanwhile, theatomic emission spectrometer 1000 may also be referred to as an AES or an optical emission spectrometer (OES). - The
laser generation unit 100 may include afirst laser generator 110 and asecond laser generator 120. In some embodiments, thelaser generation unit 100 may include only thefirst laser generator 110. - The
first laser generator 110 may be a pulse laser generator. Thus, thefirst laser generator 110 may generate pulse laser beams, for example, visible pulse laser beams. Naturally, the pulse laser beams generated by thefirst laser generator 110 are not limited to visible pulse laser beams. For example, the pulse laser beams generated by thefirst laser generator 110 may have various wavelengths, such as an infrared ray wavelength and an ultraviolet ray wavelength. - Pulse laser beams from the
first laser generator 110 may have a very high peak power. For example, the pulse laser beams from thefirst laser generator 110 may be incident into thechamber 200 and have such a peak power as to be capable of igniting plasma. The pulse laser beams from thefirst laser generator 110 may be continuously incident to thechamber 200 while plasma is maintained from the moment in which the plasma is ignited. In some embodiments, the pulse laser beams from thefirst laser generator 110 may be used only for plasma ignition, and thus incident to thechamber 200 only during a short time duration for which plasma is ignited. - The
second laser generator 120 may be a continuous wave (CW) laser generator. Thus, thesecond laser generator 120 may generate CW laser beams, for example, infrared ray (IR) CW laser beams. Naturally, the CW laser beams generated by thesecond laser generator 120 are not limited to IR CW laser beams. - The CW laser beams from the
second laser generator 120 may be incident to thechamber 200 and maintain the inside of thechamber 200 at high temperatures before plasma ignition. Also, after the plasma ignition, the CW laser beams from thesecond laser generator 120 may be used to maintain plasma or increase the intensity of plasma. Thus, the incidence of the CW laser beams from thesecond laser generator 120 to thechamber 200 may begin before plasma ignition and continue while plasma is maintained. In some embodiments, the CW laser beams from thesecond laser generator 120 may be incident to thechamber 200 after plasma ignition. - The
chamber 200 may be a container in which a gaseous or liquid analyte is contained and plasma is generated. For example, laser beams may be irradiated to an analyte in thechamber 200 to generate plasma, and plasma light from the plasma may be emitted out of thechamber 200. - The
chamber 200 may include abody 210, anelliptical mirror 220, and awindow 230. Thebody 210 may define a reaction space in which plasma is generated, and isolate the reaction space from the outside. Thebody 210 may typically include a metal material and be maintained in a ground state to block noise from the outside during a plasma process. An insulating liner may be located inside thebody 210. The insulating liner may protect thebody 210 and prevent occurrence of arcing in thechamber 200. The insulating liner may include ceramic or quartz. - The
elliptical mirror 220 may be located at an inner side surface of thebody 210 and include a material capable of reflecting laser beams and plasma light. For example, an inner portion of theelliptical mirror 220 may include a material, such as Pyrex or quartz, and an outer portion of theelliptical mirror 220 may include a metal material. In some embodiments, theelliptical mirror 220 may be optically coated to reflect only light of a required wavelength band. - The
elliptical mirror 220 may condense incident light on a focal position, reflect light generated at the focal position, and output the reflected light out of thechamber 200. For reference, theelliptical mirror 220 may have two foci and conform to the law of reflection by which light from any one of the two foci is reflected by theelliptical mirror 220 and travels toward the other one of the two foci. Thus, laser beams may be reflected by theelliptical mirror 220 and condensed on a condensing point in thechamber 200, for example, a focus F of theelliptical mirror 220. Also, plasma light from plasma generated at a position of the focus F of theelliptical mirror 220 may be reflected by theelliptical mirror 220 and emitted out of thechamber 200. As a result, theelliptical mirror 220 may increase efficiency of input of laser beams to thechamber 200 and efficiency of output of plasma light from thechamber 200. - The
window 230 may be a kind of path through which laser beams are incident to thechamber 200 and plasma light is emitted from thechamber 200. Thewindow 230 may have a flat panel shape and include a light-transmissive material, for example, quartz or glass. - As shown in
FIG. 1 , anebulizer 250 configured to supply an analyte may be installed in thechamber 200. Thenebulizer 250 may vaporize a liquid-state analyte Ca and supply the vaporized liquid-state analyte Ca into thechamber 200. Meanwhile, thenebulizer 250 may supply carrier gas Cg along with the vaporized analyte into thechamber 200. The carrier gas Cg may be, for example, argon (Ar) gas. Argon gas may be an inert gas, which is a kind of gaseous solvent, and contribute toward generating plasma more easily. - More specifically, the liquid-state analyte Ca may be supplied through a first supply line P1 to the
nebulizer 250 and vaporized. Also, the carrier gas Cg may be supplied through a second supply line P2 to thenebulizer 250. Thenebulizer 250 may supply the vaporized analyte Ca and the carrier gas Cg together through a third supply line P3 to thechamber 200. Meanwhile, a fourth supply line P4 may be located at an opposite side of the third supply line P3, and gases remaining in thechamber 200 may be discharged through a fourth supply line P4. - Although
FIG. 1 illustrates an example in which thenebulizer 250 and the first to third supply lines P1, P2, and P3 connected thereto are located in a lower portion of thechamber 200 and the fourth supply line P4 is located in an upper portion of thechamber 200, positions of thenebulizer 250 and the first to fourth supply lines P1, P2, P3, and P4 are not limited thereto. For example, thenebulizer 250 and the first to third supply lines P1, P2, and P3 connected thereto may be located in the upper portion of thechamber 200 or at a side surface of thechamber 200. Also, the fourth supply line P4 may be located at a bottom surface or a side surface of thechamber 200. However, thenebulizer 250 and the first to third supply lines P1, P2, and P3 connected thereto and the fourth supply line P4 may be located at the side surfaces of thechamber 200 to the exclusion of a position in which theelliptical mirror 220 or thewindow 230 is located. - The
spectrometer 300 may receive plasma light emitted from thechamber 200, split and resolve the plasma light, and obtain an emission spectrum. Ultratrace elements included in the analyte may be detected based on the emission spectrum obtained by thespectrometer 300. Thespectrometer 300 will be described below in further detail with reference toFIG. 2C . - The
input optics 400 may serve to allow laser beams from thelaser generation unit 100 to be incident to thechamber 200 and allow plasma light from thechamber 200 to be emitted to thespectrometer 300. Theinput optics 400 may include a firstdichroic mirror 410, afocal optics 420, and a seconddichroic mirror 430. - The first
dichroic mirror 410 may reflect pulse laser beams from thefirst laser generator 110 toward thechamber 200 and transmit CW laser beams from thesecond laser generator 120 toward thechamber 200. The firstdichroic mirror 410 may be located in a direction in which pulse laser beams are emitted from thefirst laser generator 110 and CW laser beams are emitted from thesecond laser generator 120. The firstdichroic mirror 410 may be located so that thefirst laser generator 110 and thesecond laser generator 120 may maintain a predetermined angle in consideration of reflection and transmission characteristics. For example, thefirst laser generator 110 and thesecond laser generator 120 may be located to maintain an angle of about 90° with the firstdichroic mirror 410 as a vertex. Also, the firstdichroic mirror 410 may be located at an inclination of substantially 45° with respect to each of a direction in which pulse laser beams from thefirst laser generator 110 travel and a direction in which CW laser beams from thesecond laser generator 120 travel. In some embodiments, an angle at which thefirst laser generator 110 and thesecond laser generator 120 are located may be changed. In this case, an inclination of the firstdichroic mirror 410 may be changed. - Meanwhile, materials included in the first
dichroic mirror 410 may be changed so that the firstdichroic mirror 410 may transmit pulse laser beams from thefirst laser generator 110 and reflect CW laser beams from thesecond laser generator 120. In this case, thefirst laser generator 110 may be located at a left front end of the firstdichroic mirror 410, while thesecond laser generator 120 may be located at a lower end of the firstdichroic mirror 410. - The second
dichroic mirror 430 may be located at a left front end of thewindow 230 of thechamber 200. Through the seconddichroic mirror 430, both the pulse laser beams from thefirst laser generator 110 and the CW laser beams from thesecond laser generator 120 are transmitted toward thechamber 200. Also, the seconddichroic mirror 430 may reflect plasma light emitted from thechamber 200 toward thespectrometer 300. More specifically, plasma light may be directly emitted from thechamber 200 through thewindow 230 and reflected by the seconddichroic mirror 430 toward thespectrometer 300. Also, plasma light may be firstly reflected by theelliptical mirror 220, emitted through thewindow 230, and reflected by the seconddichroic mirror 430 toward thespectrometer 300. - Although
FIG. 1 illustrates an example in which plasma light emitted from thechamber 200 is reflected by the seconddichroic mirror 430 and travels upward, a direction in which plasma light reflected by the seconddichroic mirror 430 travels is not limited to an upward direction. For example, an angle at which the seconddichroic mirror 430 is located may be controlled so that plasma light may travel downward or sideward. Naturally, thespectrometer 300 may be located in a direction in which plasma light travels. In addition, although not shown, a homogenizer, which is an optical device configured to spatially uniformize light, may be located between thespectrometer 300 and the seconddichroic mirror 430. - The
focal optics 420 may condense pulse laser beams from thefirst laser generator 110 and CW laser beams from thesecond laser generator 120 on one point, for example, a focal position of theelliptical mirror 220. For this purpose, thefocal optics 420 may include, for example, a convex lens. Thefocal optics 420 may further include a lens configured to convert laser beams into ring-shaped beams and a lens configured to compensate for aberration. Thefocal optics 420 will be described below in further detail with reference toFIG. 2A . - The
AES 1000 according to the present embodiment may generate plasma by using laser beams, for example, pulse laser beams, and emit plasma light from the plasma. In this case, theAES 1000 of the present embodiment may condense laser beams and emit plasma light by using theelliptical mirror 220 located in thechamber 200, thereby greatly increasing input efficiency of laser beams and output efficiency of plasma light from thechamber 200. Furthermore, theAES 1000 of the present embodiment may be downscaled based on LIP and increase output efficiency of plasma light based on the above-described condensing structure of thechamber 200. As a result, detection intensity may increase, and analysis reliability may improve. - For reference, typical AESs may use Flame, inductively coupled plasma (ICP), microwave-induced plasma (MIP), direct current plasma (DCP), electric spark/arc, or LIP. However, since plasma generated by Flame, ICP, MIP, or DCP has a large size, an AES having a large footprint may be needed. Also, since electric spark/arc or LIP is capable of generating plasma with a fine size, it may be possible to downscale AESs, but detection intensity may be low and quantitative analysis may be difficult. However, since the
AES 1000 of the present embodiment is based on LIP, theAES 1000 may be downscaled. Also, since theelliptical mirror 220 is included in thechamber 200, the intensity of plasma light may increase and thus, detection intensity may increase, thereby solving problems of the typical AESs. -
FIG. 2A is a detailed block diagram of a structure of aninput optics 400 in the LIP-based AES ofFIG. 1 ,FIG. 2B is a perspective view of a chamber, andFIG. 2C is a detailed block diagram of a structure of spectrometer. - Referring to
FIG. 2A , in anAES 1000 of the present embodiment, afocal optics 420 of theinput optics 400 may include a pair ofaxicon lenses 422, aconvex lens 424, and acylindrical lens 426. - The pair of
axicon lenses 422 may convert pulse laser beams from thefirst laser generator 110, which are reflected by the firstdichroic mirror 410, and CW laser beams from thesecond laser generator 120, which are transmitted through the firstdichroic mirror 410, into ring-shaped beams. The ring-shaped beams may refer to beams distributed in the form of donuts or circular rings on a section perpendicular to a direction in which light travels. The ring-shaped beams may be formed by using devices (e.g., a spatial light modulator (SLM)) other than theaxicon lenses 422. In some embodiments, the pair ofaxicon lenses 422 may be omitted. In this case, the laser beams may be directly incident to theconvex lens 424 and condensed. - The
convex lens 424 may serve to condense incident light. For example, when ring-shaped beams are incident to theconvex lens 424, the ring-shaped beams may be condensed by theconvex lens 424 and reduced to nearly a point at a focal position. Meanwhile, as shown inFIG. 2A , light incident to theconvex lens 424 may be condensed on a second focus F2 of anelliptical mirror 220. The condensed light may continuously proceed to theelliptical mirror 220 and be reflected by theelliptical mirror 220 and condensed and irradiated to a first focus F1. As a result, laser beams from thefirst laser generator 110 and thesecond laser generator 120 may be converted into ring-shaped beams through the pair ofaxicon lenses 422 and then condensed again on a condensing point in the chamber 200 (e.g., a focus of the elliptical mirror 220) through theconvex lens 424 and theelliptical mirror 220. - While laser beams from the
first laser generator 110 and thesecond laser generator 120 are passing through the seconddichroic mirror 430, aberration may occur. To compensate for the aberration, thecylindrical lens 426 may be located at a right side of theconvex lens 424. In some embodiments, when the influence of the aberration is immaterial, thecylindrical lens 426 may be omitted. - Referring to
FIG. 2B , in theAES 1000 of the present embodiment, abody 210 of thechamber 200 may have a generally hexahedral structure. A rear end portion of thebody 210 of thechamber 200 may have an outwardly protruding curved shape corresponding to a shape of theelliptical mirror 220 located in thechamber 200. However, a shape of thebody 210 of thechamber 200 is not limited thereto. For example, an outer surface of thebody 210 may have a substantially hexahedral structure, and only an inner portion of thebody 210 may have a curved shape corresponding to theelliptical mirror 220. Also, thebody 210 may have a dome structure roundly surrounding side surfaces of the protruding curved portion. Meanwhile, an exit Ex to which laser beams are incident and from which plasma light is emitted may be formed in a front end surface of thebody 210 of thechamber 200. The window (refer to 230 inFIG. 1 ) may be located at the exit Ex. - In the
AES 1000 of the present embodiment, thechamber 200 may be manufactured to be relatively small-sized. For example, each of a length L, width W, and height H of thechamber 200 may range from several mm to several tens of mm. Thus, due to the small size, thechamber 200 may be easily located in a process system or at supply lines configured to supply a chemical to the process system during a semiconductor process. Accordingly, the chemical may be analyzed in real-time or periodically during the semiconductor process. Also, since thechamber 200 adopts a structure including theelliptical mirror 220, input efficiency of laser beams and output efficiency of plasma light may be maximized, thereby increasing detection intensity and improving analysis reliability. For reference, the chemical may contain liquids and gases and be referred to as a liquid chemical in a semiconductor process. - Referring to
FIG. 2C , in theAES 1000 of the present embodiment, aspectrometer 300 may include anincidence aperture 310, animaging mirror 320, adiffraction grating 330, and anarray detector 340. In general, optical fibers may be coupled to thespectrometer 300, and plasma light may be incident to thespectrometer 300 through the optical fibers. In thespectrometer 300 having the above-described structure, plasma light may be incident from the optical fibers to theincidence aperture 310. Also, the plasma light spreading from theincidence aperture 310 may be collected on theimaging mirror 320 to form an image. Thediffraction grating 330 having a typical plane shape may be located on an optical path, and thearray detector 340 may be located at a position where the image is formed. Thus, after the plasma light is incident to thediffraction grating 330, the plasma light may be split and resolved so that an image of theincidence aperture 310 may be formed at another position of thearray detector 340 according to a wavelength. Here, thearray detector 340 may be embodied by a charge-coupled device (CCD). - The structure of the
spectrometer 300 shown inFIG. 2C is only an example, and spectrometers having various other structures may be applied to theAES 1000 of the present embodiment. For example, a spectrometer having another structure may include, instead of an imaging mirror, a collimating mirror configured to collimate light emitted from an incidence aperture and allow the collimated light to travel toward a diffraction grating and a condensing mirror configured to condense light split and resolved by the diffraction grating and allow the condensed light to travel toward an array detector, and an order sorting filter located at a front end of the array detector. - Data (e.g., emission spectrum data) regarding split/resolved light received by the
array detector 340 of thespectrometer 300 may be transmitted to an analyzer (not shown) and used to detect elements in an analyte. Although the present embodiment describes an example in which the optical fibers are coupled to thespectrometer 300, in some other embodiments, the optical fibers may not be coupled to thespectrometer 300. In this case, plasma light reflected by the seconddichroic mirror 430 may be directly incident to thespectrometer 300 or incident to thespectrometer 300 through a condensing mirror (not shown) at a front end of thespectrometer 300. -
FIGS. 3 to 5 are schematic block diagrams of structures of LIP-based AESs according to exemplary embodiments. The same descriptions as inFIGS. 1 to 2C will be simplified or omitted for brevity. - Referring to
FIG. 3 , anAES 1000 a according to the present embodiment may differ from theAES 1000 ofFIG. 1 in terms of a structure of aninput optics 400 a. Specifically, in theAES 1000 a according to the present embodiment, theinput optics 400 a may include a firstdichroic mirror 410, afocal optics 420, a seconddichroic mirror 430, and anadditional input optics 440. - The first
dichroic mirror 410 and the seconddichroic mirror 430 of theAES 1000 a according to the present embodiment may be the same as those of theAES 1000 ofFIG. 1 in that the firstdichroic mirror 410 reflects pulse laser beams from thefirst laser generator 110 and transmits CW laser beams from thesecond laser generator 120, and the seconddichroic mirror 430 transmits both the pulse laser beams from thefirst laser generator 110 and the CW laser beams from the second laser generator 12, and reflects plasma light. However, as shown inFIG. 3 , a focal optics may not be provided between the firstdichroic mirror 410 and the seconddichroic mirror 430. - The
focal optics 420 of theAES 1000 a according to the present embodiment may be the same as thefocal optics 420 of theAES 1000 ofFIG. 1 except that thefocal optics 420 of theAES 1000 a is located at a left side of the firstdichroic mirror 410, and allows CW laser beams from thesecond laser generator 120 to be condensed on a left portion of the firstdichroic mirror 410. Here, a point on which the CW laser beams are condensed by thefocal optics 420 may be a second focus F2 of theelliptical mirror 220. - The
additional input optics 440 may be an optics configured to allow pulse laser beams from thefirst laser generator 110 to be incident to the firstdichroic mirror 410. Theadditional input optics 440 may be located at a lower end of the firstdichroic mirror 410. Theadditional input optics 440 may include a pair of axicon lenses 442 and aconcave lens 444. The pair of axicon lenses 442 may convert laser beams from thefirst laser generator 110 into ring-shaped beams. Ring-shaped beams may be formed by using an SLM instead of the pair of axicon lenses 442. In some embodiments, the pair of axicon lenses 442 may be omitted. - The
concave lens 444 may serve to expand incident light. For example, when ring-shaped beams are incident to theconcave lens 444, an inner radius, outer radius, and width of a ring shape may increase so that the ring shape may entirely expand. In conclusion, theadditional input optics 440 may serve to convert the pulse laser beams from thefirst laser generator 110 into ring-shaped beams, expand the ring-shaped beams, and allow the expanded ring-shaped beams to be incident to the firstdichroic mirror 410. - For reference, when pulse laser beams are condensed, plasma may be generated even in the atmosphere, due to the fact that there are media (e.g., oxygen, nitrogen, and water) for igniting plasma in the atmosphere. Accordingly, generation of plasma in the atmosphere may be prevented by adopting the
concave lens 444. Also, theconcave lens 444 may make light appear to expand from one point. For example, theconcave lens 444 and the firstdichroic mirror 410 may make laser beams appear to be emitted from the second focus F2 of theelliptical mirror 220. In addition, in the case of theadditional input optics 440, a cylindrical lens may be located over theconcave lens 444 to compensate for aberration. However, when the influence of aberration is immaterial, the cylindrical lens may be omitted. - Referring to
FIG. 4 , anAES 1000 b according to the present embodiment may differ from theAES 1000 ofFIG. 1 in terms of a structure of achamber 200 a and a structure of aninput optics 400 b. Specifically, in theAES 1000 b of the present embodiment, aspherical mirror 220 a may be located in thechamber 200 a. For reference, the law of reflection of a spherical mirror will now be described. Incident light parallel to an optical axis may be reflected by the spherical mirror and travel to a focus located on the optical axis. Incident light passing through the focus may be reflected by the spherical mirror and travel parallel to the optical axis. Also, incident light passing through a center of the spherical mirror may be reflected by the spherical mirror and travel to the center of the spherical mirror again. - Due to reflection characteristics of the
spherical mirror 220 a, pulse laser beams from afirst laser generator 110 and CW laser beams from asecond laser generator 120 may be incident in the form of collimating beams to thechamber 200 a. As described above, light parallel to an optical axis may be reflected by thespherical mirror 220 a, condensed on a focus F, and irradiated. Thus, in theAES 1000 b of the present embodiment, theinput optics 400 b may include abeam collimating optics 420 a instead of thefocal optics 420. Thebeam collimating optics 420 a may be embodied by, for example, omitting theconvex lens 424 from thefocal optics 420 of theAES 1000 ofFIG. 1 . When the convex 424 is omitted, ring-shaped beams may be transmitted as collimating beams through the seconddichroic mirror 430 and incident to thechamber 200. In some embodiments, a collimating lens may be used instead of the pair of axicon lenses (refer to 422 inFIG. 2A ) to obtain typical collimating beams. - Plasma light from the focus F of the
spherical mirror 220 a may be reflected by thespherical mirror 220 a, emitted in the form of collimating light, and reflected by the seconddichroic mirror 430 and travel toward thespectrometer 300. Even if reflected by the seconddichroic mirror 430, the collimating light may still remain collimated. Accordingly, anoutput condensing optics 450 may be further located between the seconddichroic mirror 430 and thespectrometer 300 in order to condense plasma light reflected by the seconddichroic mirror 430. Theoutput condensing optics 450 may be, for example, a convex lens. However, a component included in theoutput condensing optics 450 is not limited to the convex lens. For example, theoutput condensing optics 450 may further include optical devices configured to condense light. - In the
AES 1000 b of the present embodiment, thechamber 200 a may include thespherical mirror 220 a and adopt an input optics corresponding to thespherical mirror 220 a, thereby increasing input efficiency of laser beams and output efficiency of plasma light. Thus, the AES 100 b of the present embodiment may increase detection intensity to improve analysis reliability. Also, since theAES 1000 b of the present embodiment may be fabricated to be downscaled like theAES 1000 ofFIG. 1 ,AESs 1000 b may be installed in various positions in a semiconductor manufacturing facility so that a chemical may be analyzed in real-time or periodically during a semiconductor process. - Referring to
FIG. 5 , anAES 1000 c of the present embodiment may differ from theAES 1000 ofFIG. 1 in a structure of achamber 200 b and a structure of aninput optics 400 c. Specifically, in theAES 1000 c of the present embodiment, afirst laser generator 110 may be located at a right side of thechamber 200 b, and pulse laser beams from thefirst laser generator 110 may be directly irradiated to a focus F of anelliptical mirror 220 b of thechamber 200 b through aninput window 232. The focus F may be located in a central portion of theelliptical mirror 220 b. - An
additional input optics 440 a may be located at a left side of thefirst laser generator 110 so that the pulse laser beams from thefirst laser generator 110 may be condensed on the focus F of theelliptical mirror 220 b. Theadditional input optics 440 a may include a convex lens. Also, theadditional input optics 440 a may further include a pair of axicon lenses to generate ring-shaped beams. Meanwhile, theinput window 232 may transmit or reflect light according to a wavelength, unlike awindow 230 located at a front side of thechamber 200 b. For example, theinput window 232 may reflect and cut off plasma light and transmit pulse laser beams. Thus, leakage of plasma light may be prevented by theinput window 232. - Since the pulse laser beams from the
first laser generator 110 are directly incident to thechamber 200 b through theadditional input optics 440 a, theinput optics 400 c may not include a first dichroic mirror. In other words, theAES 1000 ofFIG. 1 may adopt the firstdichroic mirror 410 so that pulse laser beams from thefirst laser generator 110 and CW laser beams from thesecond laser generator 120 may be incident to thechamber 200 in the same direction. However, theAES 1000 c of the present embodiment does not need to adopt the first dichroic mirror because pulse laser beams from thefirst laser generator 110 are incident to thechamber 200 b in an opposite direction to a direction in which CW laser beams from thesecond laser generator 120 are incident to thechamber 200 b. Accordingly, the CW laser beams from thesecond laser generator 120 may be incident to thechamber 200 b through afocal optics 420, a seconddichroic mirror 430, and thewindow 230. Here, theadditional input optics 440 a may be included in theinput optics 400 c. -
FIG. 6A is a schematic block diagram of a structure of an LIP-based AES according to an exemplary embodiment, andFIG. 6B is a detailed perspective view of a condensing mirror. The same descriptions as inFIGS. 1 to 5 will be simplified or omitted for brevity. - Referring to
FIGS. 6A and 6B , anAES 1000 d according to the present embodiment may differ from theAES 1000 ofFIG. 1 in terms of a structure of achamber 200 c. Specifically, in theAES 1000 d according to the present embodiment, thechamber 200 c may include acondensing mirror 220 c into which an elliptical mirror 220-1 and a spherical mirror 220-2 are merged. - The condensing
mirror 220 c may serve to reflect plasma light generated at a focus and uniformize an angular intensity distribution of light. The elliptical mirror 220-1 may reflect plasma light and condense the plasma light on a position of a second focus F2 (e.g., an incidence surface of a spectrometer 300). However, when plasma light is condensed by only the elliptical mirror 220-1, the intensity of spatial light at the incidence surface of thespectrometer 300 may have a Gaussian distribution so that an angular intensity distribution of plasma light may be non-uniform. For reference, since optical fibers are typically coupled to thespectrometer 300, the position of the second focus F2 may correspond to an incidence surface of the optical fibers in a strict sense. If a homogenizer is located at a front end of thespectrometer 300, an incidence surface of the homogenizer may correspond to the position of the second focus F2. - In a structure of the elliptical mirror 220-1, light reflected by a central portion of the elliptical mirror 220-1 may have the highest intensity, and light intensity may be continuously reduced toward an outer portion of the elliptical mirror 220-1. Thus, light intensity may be greatly dependent on an incidence angle. Characteristics of the elliptical mirror 220-1 may be determined by a focus of the elliptical mirror 220-1. For example, assuming that a focus in the
chamber 200 c is a first focus F1 of the elliptical mirror 220-1, a distance from a center of the elliptical mirror 220-1 is a first focal distance L1, a focus outside thechamber 200 c is the second focus F2 of the elliptical mirror 220-1, and a distance from the center of the elliptical mirror 220-1 is a second focal distance L2, the amount of plasma light condensed by the elliptical mirror 220-1 may increase as a ratio of L2 to L1 becomes higher. That is, as the ratio of L2 to L1 becomes higher, the first focus F1 may become more adjacent to the elliptical mirror 220-1. Thus, a larger amount of plasma light may be reflected by the elliptical mirror 220-1. - A size of a condensing spot at the second focus F2 on which light reflected by the elliptical mirror 220-1 is condensed may increase by L2/L1 times. Accordingly, as the ratio of L2 to L1 increases, the size of the condensing spot may increase and thus, efficiency of coupling of plasma light with the
spectrometer 300 may be reduced. Also, since the intensity of light reflected by the outer portion of the elliptical mirror 220-1 is weak, light intensity may become non-uniform according to an angle. That is, an angular intensity distribution of light may be non-uniform. Here, the angle may refer to an angle (e.g., a solid angle), which may increase away from a center of a concentric circle on a section perpendicular to a direction in which light proceeds. - In contrast, as the ratio of L2 to L1 is reduced, a value of L2/L1 may be reduced so that a small condensing spot may be formed. Thus, efficiency of coupling of plasma light with the
spectrometer 300 may increase, and uniformity of an intensity distribution of light relative to an angle may improve. However, when the ratio of L2 to L1 is reduced, the amount of light that may be condensed by the elliptical mirror 220-1 may be reduced as described above. Thus, use efficiency of light may be reduced. - To address the above-described problems of the elliptical mirror 220-1, the
AES 1000 d according to the present embodiment may adopt the condensingmirror 220 c into which the elliptical mirror 220-1 and the spherical mirror 220-2 are combined. A structure of the condensingmirror 220 c will now be described in further detail. As shown inFIG. 6A , when the elliptical mirror 220-1 has an open structure on the left, the spherical mirror 220-2 may surround an open portion of the elliptical mirror 220-1 and have an open structure on the left. As shown inFIG. 6B , a diameter of a side of the spherical mirror 220-2 toward the elliptical mirror 220-1 may be greater than a diameter of an open side of the spherical mirror 220-2. Also, the diameter of the side of the spherical mirror 220-2 toward the elliptical mirror 200-1 may be greater than a diameter of the open portion of the elliptical mirror 220-1. Meanwhile, the open side of the spherical mirror 220-2 may have such a diameter as to allow light reflected by the elliptical mirror 200-1 to pass therethrough without blocking. For instance, the diameter of the open side of the spherical mirror 220-2 may be greater than the diameter of the open portion of the elliptical mirror 220-1. - The elliptical mirror 220-1 and the spherical mirror 220-2 may have the same focal position or different focal positions. In the
condensing mirror 220 c having the above-described structure, light deviating from the elliptical mirror 220-1 may be reflected by the spherical mirror 220-2 and travel toward the elliptical mirror 220-1. The reflected light may be reflected by the elliptical mirror 220-1 again, condensed on the position of the second focus F2, and emitted to increase the amount of reflection of light and use efficiency of light. Also, since light returned by the spherical mirror 220-2 is mostly reflected by the outer portion of the elliptical mirror 220-1, light intensity may increase at the outer portion of the elliptical mirror 220-1. Accordingly, the condensingmirror 220 c may uniformize an angular intensity distribution of light. - In the
AES 1000 d of the present embodiment, thechamber 200 c may include the condensingmirror 220 c including a combination of the elliptical mirror 220-1 and the spherical mirror 220-2. Thus, most of plasma light emitted from thechamber 200 c may be reflected and condensed to increase use efficiency of the plasma light. Also, the intensity of plasma light in the outer portion of the elliptical mirror 220-1 may be increased to uniformize an angular intensity distribution of light. -
FIG. 7A is a schematic block diagram of a structure of an LIP-based AES according to an exemplary embodiment, andFIG. 7B is a detailed block diagram of a portion of a droplet forming device. The same descriptions as inFIGS. 1 to 2C will be simplified or omitted for brevity. - Referring to
FIG. 7A , anAES 1000 e of the present embodiment may greatly differ from theAES 1000 ofFIG. 1 in that achamber 200 d does not include a mirror configured to condense light and adroplet forming device 270 is used as a device configured to supply an analyte. - Specifically, in the
AES 1000 e of the present embodiment, alaser generation unit 100 and aspectrometer 300 may be the same as thelaser generation unit 100 and thespectrometer 300 included in theAES 1000 ofFIG. 1 . Aninput optics 400 d may include a firstdichroic mirror 410 and afocal optics 420 but not include a second dichroic mirror. Since a condensing mirror is not located in thechamber 200 d, thefocal optics 420 may allow pulse laser beams from afirst laser generator 110 and CW laser beams from asecond laser generator 120 to be directly condensed and irradiated to a point at which plasma is to be generated in thechamber 200 d. For example, thefocal optics 420 may include a convex lens. Also, thefocal optics 420 may further include a pair of axicon lenses to convert laser beams into ring-shaped beams. - The
chamber 200 d may include abody 210 a, afirst window 230 a, and asecond window 234. Thebody 210 a may have a hexahedral structure. Naturally, a structure of thebody 210 a is not limited to the hexahedral structure. For example, thebody 210 a may have a cylindrical structure. Materials or characteristics of thebody 210 a may be the same as those of thebody 210 of thechamber 200 included in theAES 1000 ofFIG. 1 . - The
first window 230 a may be located at a left side surface of thechamber 200 d to which laser beams are incident, and serve to transmit or reflect light according to a wavelength. For example, thefirst window 230 a may allow pulse laser beams from thefirst laser generator 110 and CW laser beams from thesecond laser generator 120 to be transmitted therethrough and incident to thechamber 200 d. Also, thefirst window 230 a may reflect and cut off plasma light generated in thechamber 200 d. - The
second window 234 may be located at a right side surface from which plasma light is emitted and also, serve to transmit or reflect light according to a wavelength. For example, thesecond window 234 may reflect and cut off laser beams incident to thechamber 200 d, and transmit and emit plasma light generated in thechamber 200 d. - An
output condensing optics 450 may be located between thesecond window 234 and thespectrometer 300. Theoutput condensing optics 450 may condense plasma light emitted through thesecond window 234 toward thespectrometer 300. Theoutput condensing optics 450 may be, for example, a convex lens. However, a component included in theoutput condensing optics 450 is not limited to the convex lens. For example, theoutput condensing optics 450 may further include optical devices configured to condense light. - In the
AES 1000 e of the present embodiment, an analyte Ca, which is in a liquid state, may pass through thedroplet forming device 270 and be supplied in a droplet state to thechamber 200 d. More specifically, the liquid-state analyte Ca may be supplied through a first supply line P1 into atemporary storage unit 275 of thedroplet forming device 270. The analyte Ca may be controlled and put into a droplet state having a predetermined size and supplied through a second supply line P2 into thechamber 200 d. Although not shown, a carrier gas, such as argon (Ar), may be supplied through another supply line (not shown) into thechamber 200 d. Meanwhile, liquids or gases remaining in thechamber 200 may be discharged through a third supply line P3 located in a lower portion of thechamber 200 d. For reference, in theAES 1000 ofFIG. 1 , since thenebulizer 250 vaporizes an analyte and supplies the vaporized analyte into thechamber 200, thenebulizer 250 may be installed anywhere in thechamber 200. In contrast, in theAES 1000 e of the present embodiment, since thedroplet forming device 270 supplies an analyte in a liquid state (i.e., a droplet state) into thechamber 200, thedroplet forming device 270 may be located in an upper portion of the chamber 200 e so that droplets may fall under the influence of gravity. - The
droplet forming device 270 may be, for example, embodied by an inkjet device. However, a device embodying thedroplet forming device 270 is not limited to the inkjet device. Thedroplet forming device 270 will be described below in further detail with reference toFIG. 7B . - Referring to
FIG. 7B , thedroplet forming device 270 may include a first supply line P1, atemporary storage unit 275, and a second supply line P2. Thetemporary storage unit 275 may be connected to the first supply line P1, receive an analyte through the first supply line P1 and contain the analyte. The analyte stored in thetemporary storage unit 275 may be sprayed in a droplet state through a nozzle of an end of the second supply line P2. Thetemporary storage unit 275 and the second supply line P2 including the nozzle may correspond to a head portion of thedroplet forming device 270. - Meanwhile, the
droplet forming device 270 may further include anactuator 272 configured to control an ejection amount of droplets, avoltage supply unit 274, a measuringunit 276, and acontroller 278. Theactuator 272 may be installed at a nozzle of the second supply line P2 and provide driving force for allowing the nozzle to spray droplets. For example, theactuator 272 may allow ink contained in the nozzle to be ejected in a droplet state due to a spray mechanism that contracts and relaxes the nozzle. The spray mechanism due to theactuator 272 may use a piezo method or a thermal method of applying pressure or heat to the nozzle. Therefore, the nozzle may include a material capable of contraction and relaxation due to pressure or heat. However, the spray mechanism due to theactuator 272 or a material included in the nozzle is not limited to the above descriptions. - The
voltage supply unit 274 may supply a voltage to theactuator 272 under the control of thecontroller 278. Theactuator 272 installed at the nozzle of the second supply line P2 may be electrically connected to thevoltage supply unit 274 and generate spray driving force corresponding to a magnitude of the voltage supplied from thevoltage supply unit 274. The measuringunit 276 may measure a velocity, area, and volume of each of droplets and transmit the measured values to thecontroller 278. Thecontroller 278 may determine whether a drop amount of droplets is appropriate based on measured information, control the magnitude of a voltage applied to the nozzle through thevoltage supply unit 274 based on the determination result, and control the drop amount of the droplets sprayed via the nozzle. - The
AES 1000 e of the present embodiment may supply an analyte in a droplet state through thedroplet forming device 270 to thechamber 200 d so that the size of droplets may be controlled to enable quantitative analysis of the analyte. Also, theAES 1000 e of the present embodiment may irradiate laser beams (e.g., pulse laser beams) to droplets instead of gases so that plasma may be directly generated from the droplets to obtain plasma light having a high intensity. As a result, detection intensity may increase, and analysis reliability may improve. -
FIG. 8 is a schematic block diagram of a structure of an LIP-based AES according to an embodiment. The same descriptions as inFIGS. 1 to 2C, 7A, and 7B will be simplified or omitted for brevity. - Referring to
FIG. 8 , anAES 1000 f of the present embodiment may be a combination of theAES 1000 ofFIG. 1 and theAES 1000 e ofFIG. 7A . Specifically, in theAES 1000 f of the present embodiment, alaser generation unit 100, achamber 200, aspectrometer 300, and aninput optics 400 may be substantially the same as in theAES 1000 ofFIG. 1 . However, an angle at which a seconddichroic mirror 430 is located and a position of thespectrometer 300 may be different than in theAES 1000 ofFIG. 1 because adroplet forming device 270 is located over thechamber 200. Thedroplet forming device 270 may be located in various positions over thechamber 200. Thus, the seconddichroic mirror 430 and thespectrometer 300 may be located in substantially the same positions as in theAES 1000 ofFIG. 1 . - In the
AES 1000 f of the present embodiment, thedroplet forming device 270 may be substantially the same as theAES 1000 e ofFIG. 7A . Thus, an analyte may be supplied in a droplet state through thedroplet forming device 270 into thechamber 200. - In the
AES 1000 f of the present embodiment, thechamber 200 may adopt anelliptical mirror 220 so as to increase input efficiency of laser beams and output efficiency of plasma light. Also, thechamber 200 may adopt thedroplet forming device 270 as a device configured to supply the analyte. Thus, the intensity of plasma light may be increased to further increase detection intensity, and a size of droplets may be quantitatively controlled to perform quantitative analysis on the analyte. - In addition, the
nebulizer 250 included in each of theAESs FIGS. 1, 3, 4, 5, and 6A and thedroplet forming device 270 included in each of theAESs FIGS. 7A and 8 have been described above as examples of the device configured to supply the analyte. However, the device configured to supply the analyte is not limited thereto. For example, the device configured to supply the analyte may be simply a pipeline-type supply line including a nozzle. -
FIG. 9 is a schematic block diagram of a structure of asemiconductor manufacturing facility 10000 including an LIP-based AES according to an exemplary embodiment. The same descriptions as inFIGS. 1 to 8 will be simplified or omitted for brevity. - Referring to
FIG. 9 , thesemiconductor manufacturing facility 10000 according to the present embodiment may include anAES 1000, a centralchemical supply system 2000, and aprocess system 3000. As illustrated with a bold dashed line, theprocess system 3000 may be typically referred to as a fab facility, and the centralchemical supply system 2000 may be referred to as a sub-fab facility. - A semiconductor device may be fabricated by using various semiconductor processes, such as a cleaning process, a lithography process, an etching process, an oxidation process, a diffusion process, a deposition process, and chemical and mechanical polishing processes. In this case, various chemicals may be used in the cleaning, etching, and deposition processes.
- The central
chemical supply system 2000 may include amain tank 2100, apump 2200, afirst filter 2300, asupply tank 2400, and asecond filter 2500. The centralchemical supply system 2000 may supply a chemical stored in themain tank 2100 through thepump 2200, thefirst filter 2300, thesupply tank 2400, and thesecond filter 2500 into theprocess system 3000 so that the semiconductor process may be performed in theprocess system 3000. - The
process system 3000 may include a plurality of fabrication apparatuses (hereinafter, “fab apparatuses”) 3100-1 to 3100-n and a valve manifold box (VMB) 3200. Each of the fab apparatuses 3100-1 to 3100-n may include apparatuses configured to perform the above-described various semiconductor processes. For example, when the fab apparatuses 3100-1 to 3100-n are apparatuses for a deposition process, each of the fab apparatuses 3100-1 to 3100-n may include a chamber for the deposition process. TheVMB 3200 may dividedly supply the chemical from the centralchemical supply system 2000 into the respective fab apparatuses 3100-1 to 3100-n. - When there are impurities in a chemical used in a semiconductor process, various process failures may occur. Accordingly, a process of monitoring impurities in the chemical may be needed to reduce the process failures. In general, manufacturers may inspect impurities via a sample test before chemicals are stocked. However, there may be a possibility that impurities may be introduced to deteriorate a chemical during a process of supplying the chemical from the central
chemical supply system 2000 to the fab apparatuses 3100-1 to 3100-n. - The
semiconductor manufacturing facility 10000 according to the present embodiment may include theAES 1000 installed in the chemical supply line and/or the fab apparatuses 3100-1 to 3100-n to detect impurities during a chemical supply process. For example, theAES 1000 may do sampling and receive a chemical through a T-branch in the chemical supply line and/or the fab apparatuses 3100-1 to 3100-n. For example, the chemical may be supplied through the T-branch to the first supply line (refer to P1 inFIG. 1 ) and supplied through the nebulizer (refer to 250 inFIG. 1 ) or the droplet forming device (refer to 270 inFIG. 7A ) to the chamber (refer to 200 ofFIG. 1 or 200 d of 7A). Thus, thesemiconductor manufacturing facility 10000 of the present embodiment may, by using theAES 1000, perform an analysis of elements in real-time or periodically during a semiconductor manufacturing process and inspect impurities in the chemical. - As illustrated with dashed arrows in
FIG. 9 , theAES 1000 may be installed in the chemical supply line. Also, as illustrated with a hatched rectangle and a solid arrow inFIG. 9 , theAES 1000 may be installed in the fab apparatuses 3100-1 to 3100-n. Naturally, positions at which theAESs 1000 are installed are not limited to positions denoted inFIG. 9 . In thesemiconductor manufacturing facility 10000 of the present embodiment, theAES 1000 may be theAES 1000 ofFIG. 1 . However, the inventive concept is not limited thereto, and theAESs 1000 a to 1000 f ofFIGS. 3 to 8 may be applied to thesemiconductor manufacturing facility 10000 of the present embodiment. -
FIG. 10 is a flowchart of a process of analyzing an analyte by using an AES according to an exemplary embodiment. The flowchart ofFIG. 10 will be described with reference toFIGS. 1 to 2C for brevity. - Referring to
FIG. 10 , to begin with, an analyte may be supplied into a chamber 200 (S110). The analyte may be, for example, a chemical used in a semiconductor manufacturing process. The analyte may be supplied in a gaseous state or a droplet state through thenebulizer 250 or the droplet forming device (refer to 270 inFIG. 7A ) into thechamber 200. - Laser beams may be incident into the
chamber 200 to generate plasma (S120). The laser beams may be, for example, pulse laser beams. Also, the laser beams may further include CW laser beams. The laser beams may be incident through theinput optics 400 to thechamber 200. Also, the laser beams may be irradiated through theelliptical mirror 220 included in thechamber 200 and condensed on a position of a focus F of theelliptical mirror 220. Plasma may be generated at the position of the focus F of theelliptical mirror 220. - Meanwhile, plasma light from the plasma may be directly emitted from the
chamber 200 and reflected by theelliptical mirror 220, and proceed toward thespectrometer 300 through the seconddichroic mirror 430. - Subsequently, plasma light may be received and analyzed by the spectrometer 300 (S130). More specifically, plasma light may be received, split, and resolved by the
spectrometer 300 to obtain an emission spectrum. Peaks of intensities of light on the emission spectrum may be examined to detect elements included in the analyte. -
FIG. 11 is a flowchart of a process of manufacturing a semiconductor device by using anAES 1000 according to an exemplary embodiment. For brevity, the flowchart ofFIG. 11 will be described with reference toFIGS. 1 to 2C and 9 , and the same descriptions as inFIG. 10 will be simplified or omitted. - Referring to
FIG. 11 , to begin with, a chemical for a semiconductor manufacturing process may be supplied into a process system 3000 (S210). For example, the chemical may be supplied from a centralchemical supply system 2000 into fab apparatuses 3100-1 to 3100-n of theprocess system 3000. - Part of the chemical may be supplied into the AES 1000 (S220). Part of the chemical may be supplied through a T-branch in a chemical supply line and/or the fab apparatuses 3100-1 to 3100-n into the
AES 1000. For example, the chemical may be supplied through the T-branch to a first supply line P1 and supplied in a gaseous state through anebulizer 250 into thechamber 200. For reference, the present operation S220 may correspond to operation S120 of supplying an analyte in the analysis process ofFIG. 10 . - Subsequently, operation S230 of generating plasma and operation S240 of analyzing plasma light may be performed. The operations S230 and S240 may be respectively the same as the operation S120 of generating plasma and the operation S130 of analyzing plasma light in the analysis process of
FIG. 10 . - It may be determined whether the chemical is normal based on the analysis result (S250). For example, it may be determined whether impurity elements are included in the chemical. Also, in some embodiments, quantitative analysis may be performed to determine whether the impurity elements exceed a reference concentration.
- If the chemical is not normal (No), the semiconductor manufacturing process may be interrupted, and causes may be analyzed. Also, repair and maintenance operations may be performed on the chemical supply line of the central
chemical supply system 2000 and/or the fab apparatuses 3100-1 to 3100-n based on the analysis of the causes. - If the chemical is normal (Yes), a semiconductor process may be performed (S260). Here, the semiconductor process may be a concept including a semiconductor process using the above-described chemical and a semiconductor process subsequent thereto. The semiconductor process may include, for example, a deposition process, an etching process, an ion process, and a cleaning process. The semiconductor process may be performed to form integrated circuits (ICs) and interconnections respectively required for semiconductor chips of a wafer. Specifically, the semiconductor process may include a step of supplying a chemical gas into a deposition chamber so that a gate insulating film is formed at a semiconductor device, and also, a step of supplying another chemical gas into an oxidation chamber to form an oxide film over a layer of a semiconductor element. Meanwhile, a process of analyzing a chemical may be performed again in the subsequent semiconductor process.
- In the present operation S260, the semiconductor process may also include a process of singulating the wafer into respective semiconductor chips, a process of packaging the semiconductor chips, and a process of testing the semiconductor chips or a semiconductor package. Accordingly, operation S260 may include a concept including a process of manufacturing semiconductor devices as finished products.
- While the inventive concept has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the following claims.
Claims (30)
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2018
- 2018-01-11 US US15/867,981 patent/US20190094072A1/en not_active Abandoned
- 2018-04-16 CN CN201810337027.8A patent/CN109540295A/en active Pending
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US20100022400A1 (en) * | 2006-09-15 | 2010-01-28 | Commissariat A L'energie Atomique | Method for the quantitative measurement of biomolecular targets deposited on a biochip, and device for implementing it |
US20120217422A1 (en) * | 2011-02-24 | 2012-08-30 | Gigaphoton Inc. | Extreme ultraviolet light generation apparatus |
US20140353495A1 (en) * | 2011-12-22 | 2014-12-04 | National Institute Of Advanced Industrial Science And Technology | Nebulizer and analysis equipment |
US20130277340A1 (en) * | 2012-04-23 | 2013-10-24 | Polaronyx, Inc. | Fiber Based Spectroscopic Imaging Guided Laser Material Processing System |
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CN110296939A (en) * | 2019-06-11 | 2019-10-01 | 江苏大学 | A kind of Energetic Materials by In-Situ Diffuse Reflection reaction tank that plasma environment can be provided |
JP2021141037A (en) * | 2020-03-05 | 2021-09-16 | アールアンドディー−イーサン,リミテッド | Laser-excited plasma light source and method for plasma ignition |
US11719952B2 (en) | 2020-08-11 | 2023-08-08 | Applied Materials, Inc. | Adjustable achromatic collimator assembly for endpoint detection systems |
Also Published As
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KR20190034018A (en) | 2019-04-01 |
CN109540295A (en) | 2019-03-29 |
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