US20190088585A1 - Memory Circuits and Routing of Conductive Layers Thereof - Google Patents
Memory Circuits and Routing of Conductive Layers Thereof Download PDFInfo
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- US20190088585A1 US20190088585A1 US16/194,732 US201816194732A US2019088585A1 US 20190088585 A1 US20190088585 A1 US 20190088585A1 US 201816194732 A US201816194732 A US 201816194732A US 2019088585 A1 US2019088585 A1 US 2019088585A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H01L27/1104—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Definitions
- the present disclosure relates generally to the field of semiconductor circuits, and more particularly, to memory circuits and routing of conductive layers thereof.
- Memory circuits have been used in various applications. Memory circuits can include DRAM, SRAM, and non-volatile memory circuits.
- a SRAM circuit includes a plurality of memory cells. For a 6-T static memory in which arrays of memory cells are provided, each of the memory cells consists of six transistors. The 6-T SRAM memory cell is coupled with a bit line BL, a bit line bar BLB, and a word line. Four of the six transistors form two cross-coupled inverters for storing a datum representing “0” or “1”. The remaining two transistors serve as access transistors to control the access of the datum stored within the memory cell.
- a memory circuit includes at least one memory cell for storing a datum.
- the memory cell is coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line.
- the memory circuit includes a first conductive layer, a second conductive layer coupled with the first conductive layer, a third conductive layer coupled with the second conductive layer.
- the third conductive layer is routed for the word line and is free from including the bit line, the bit line bar, the first voltage line, and the second voltage line within the memory cell.
- a memory circuit in another embodiment, includes at least one memory cell for storing a datum.
- the memory cell is coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line.
- the memory circuit includes a first metal layer, a second metal layer electrically coupled with the first metal layer, a third metal layer electrically coupled with the second metal layer.
- the second metal layer is routed for the first voltage line and the second voltage line and the third metal layer is routed for the word line within the memory cell, wherein the second metal layer is below the third metal layer.
- a memory circuit includes at least one memory cell for storing a datum.
- the memory cell is coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line.
- the memory circuit includes a first metal layer defining electrical connections within the memory cell, a second metal layer electrically coupled with the first metal layer, a third metal layer electrically coupled with the second metal layer.
- the third metal layer routed for the word line within the memory cell has a width of about 50% or more of a width of a short side of the memory cell.
- FIG. 1 is a schematic drawing illustrating an exemplary memory circuit.
- FIG. 2 is a schematic drawing showing running directions of bit lines, voltage lines, and word line within an exemplary memory cell.
- FIG. 3 is a schematic drawing showing running directions of bit lines, voltage lines, and word line within another exemplary memory cell.
- FIG. 4A is a schematic drawing showing a layout including a well layer, an oxide definition (OD) layer, a poly layer, a contact layer, and a metal 1 (M1) layer of a portion of an exemplary memory circuit.
- OD oxide definition
- M1 metal 1
- FIG. 4B is a schematic drawing showing a layout including a metal 2 (M2) layer, a via 2 layer, and a metal 3 (M3) layer over the layout show in FIG. 4A .
- M2 metal 2
- M3 metal 3
- FIG. 5A is a schematic drawing showing another layout including a well layer, an oxide definition (OD) layer, a poly layer, a contact layer, and a metal 1 (M1) layer of a portion of an exemplary memory circuit.
- OD oxide definition
- M1 metal 1
- FIG. 5B is a schematic drawing showing another layout including a metal 1 (M1) layer, a via 1 layer, a metal 2 (M2) layer, a via 2 layer, and a metal 3 (M3) layer.
- M1 metal 1
- M2 metal 2
- M3 metal 3
- FIG. 6 is a schematic drawing showing a system including an exemplary memory circuit.
- a 6-T SRAM memory cell is also coupled with a power source V dd and another power source V ss .
- the 6-T SRAM memory cell has a plurality of metal layers.
- a metal 3 (M3) layer of the 6-T SRAM memory cell is used for the word line WL and a local voltage line within the memory cell.
- the word line WL and the local voltage line are parallel to each other.
- a metal 4 (M4) layer over the M3 layer is routed for a voltage line that is configured to couple the local voltage line with the power source V ss .
- the metal 4 layer for the voltage line is orthogonal to the word line WL and the local voltage line.
- the routing using the M3 layer for the word line WL and the local voltage line results in the width of the word line WL not being able to be desirably extended.
- the situation becomes even worse if a thin style SRAM memory cell is used.
- the thin style SRAM memory cell has a ratio of its length to width of about 2.5 or more.
- the high ratio of length/width results in a narrow word line routing.
- the narrow word line increases the resistance of the word line that adversely affects an RC time delay of signals passing through the thin word line coupled with 128, 256 or more memory cells.
- the M4 layer is used for the voltage line to pick up the local voltage line. A portion of the area of the M4 layer is consumed by routing for the voltage line.
- first and second features are formed in direct contact
- additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
- present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or dispositions discussed.
- FIG. 1 is a schematic drawing illustrating an exemplary memory circuit.
- a memory circuit 100 can include a memory array 101 including a plurality of word lines WLs and a plurality of bit lines BLs and BLBs.
- the memory array 101 can be coupled with a sense amplifier 105 .
- the memory circuit 100 can be a static random access memory (SRAM) circuit, an embedded SRAM circuit, dynamic random access memory (DRAM) circuit, an embedded DRAM circuit, a non-volatile memory, e.g., FLASH, EPROM, E 2 PROME, or other memory circuits.
- the memory array 101 can include at least one memory cell 101 a .
- the memory cell 101 a can be coupled with a bit line BL, a bit line bar BLB, a word line WL, a first voltage line 150 coupled with a power source, e.g., V dd , and a second voltage line 155 coupled with another power source, e.g., V ss , of the memory array 101 .
- the sense amplifier 105 is capable of sensing a voltage difference between the bit line BL and the bit line bar BLB to output a signal representing the datum stored in the memory cell 101 a .
- the memory cell 101 a can include transistors 110 , 115 , 120 , 125 , 130 , and 135 .
- a portion of a memory circuit 100 may have 8, 16, 32, 64, 128 or more columns that can be arranged in word widths.
- the word lines can be laid out substantially orthogonally to the bit lines. In other embodiments, other arrangements of the word lines and bit lines can be provided.
- the memory cell 101 a can include the transistors 110 , 115 , 120 , 125 , 130 , and 135 .
- the transistors 110 , 120 and 115 , 125 are configurable as two cross-latch inverters forming a flip-flop for storing the datum.
- the transistors 130 and 135 are operable as two pass transistors, access transistors or pass gates.
- the transistors 110 and 115 can be referred to as pull-up transistors and the transistors 120 and 125 can be referred to as pull-down transistors.
- the pull-up transistors can be configured to pull a potential towards the power source V dd coupled with the first voltage line 150 .
- the pull-down transistors can be configured to pull a potential towards the power source V ss coupled with the second voltage line 155 .
- the source ends of the transistors 110 and 115 can be electrically coupled with the first voltage line 150 coupled with the power source V dd .
- a drain of the transistor 110 can be electrically coupled with a source of the transistor 130 , a drain of the transistor 120 , and a gate of the transistor 115 .
- a drain of the transistor 115 can be electrically coupled with a source of the transistor 135 , a drain of the transistor 125 , and a gate of the transistor 110 .
- the sources of the transistors 120 and 125 can be electrically coupled with the second voltage line 155 coupled with the power source V ss , e.g., ground, common or a voltage state that is lower than the power source V dd .
- the gates of the transistor 110 and transistor 120 and the gates of the transistor 115 and the transistor 125 respectively can be electrically coupled.
- Drains of the transistors 130 , 135 can be electrically coupled with the bit line BL and bit line bar BLB, respectively.
- the gates of the transistors 130 , 135 can be electrically coupled with the word line WL.
- the bit lines BL, BLB and the word line WL may extend to other memory cells of the memory array 101 . It is noted that the number, type, and disposition of the transistors 110 , 115 , 120 , 125 , 130 , and 135 are mere examples. One of ordinary skill in the art would be able to modify the number, type, and disposition of the transistors to achieve a desired memory cell.
- FIG. 2 is a schematic drawing showing running directions of bit lines, voltage lines, and word line within an exemplary memory cell.
- the memory circuit 100 can include a plurality of conductive layers, e.g., metal layers routed for the bit lines BL, BLB, voltage lines 150 , 155 , and the word line WL.
- the plurality of the metal layers can include a metal 1 (M1) layer, a metal 2 (M2) layer, and a metal 3 (M3) layer, which are sequentially formed within a multiple layer interconnect structure.
- the M3 layer can be over the M2 layer, which can be over the M1 layer.
- M1 metal 1
- M2 metal 2
- M3 metal 3
- the M2 layer can be routed for the bit lines BL, BLB and voltage lines 150 , 155 .
- the M3 layer can be routed for the word line WL.
- the M3 layer is free from being routed for the bit lines BL, BLB and voltage lines 150 , 155 .
- the M3 layer routed for the word line WL can be substantially orthogonal to the M2 layer routed for the bit lines BL, BLB, the first voltage line 150 , and the second voltage line 155 within the memory cell 101 a .
- the memory cell 101 a can have a long side having a length Lc and a short side having a width Wc.
- a ratio of Lc/Wc can be about 2.5 or more. In other embodiments, the ratio can be about 3 or more. In other embodiments, within the memory cell 101 a a ratio of the length of the word line to the length of the bit line BL can be about 2.5 or more. In still other embodiments, the ratio can be about 3 or more.
- the M2 layer routed for the bit line BL can be disposed between the first voltage line 150 and the second voltage line 155 of the M2 layer.
- the M2 layer routed for the bit line bar BLB can be disposed between the first voltage line 150 and the second voltage line 155 of the M2 layer.
- the M2 layer routed for the second voltage line 155 can be disposed between the first voltage line 150 and the bit line BL of the M2 layer.
- the M2 layer routed for the second voltage line 155 can be disposed between the first voltage line 150 and the bit line bar BLB of the M2 layer.
- bit line BL and the bit line bar BLB can be desirably shielded by the first voltage line 150 and/or the second voltage line 155 .
- the voltages on the bit line BL and the bit line bar BLB can be desirably prevented from being disturbed by accesses of other ports.
- FIG. 3 is a schematic drawing showing running directions of bit lines, voltage lines, and word line within another exemplary memory cell.
- the M1 layer can be routed for the bit lines BL and BLB.
- the M2 layer can be routed for the voltage lines 150 and 155 .
- the M3 layer can be routed for the word line WL.
- the M3 layer is free from being routed for the bit lines BL, BLB and voltage lines 150 , 155 .
- the M2 layer routed for the second voltage line 155 can be disposed between the first voltage line 150 of the M2 layer and the bit line BL of the M1 layer.
- the M2 layer routed for the second voltage line 155 can be disposed between the first voltage line 150 of the M2 layer and the bit line bar BLB of the M1 layer.
- the M3 layer routed for the word line WL can be substantially orthogonal to the M1 layer routed for the bit lines BL, BLB and the M2 layer routed for the voltage lines 150 , 155 .
- the second voltage line 155 coupled with the power source V ss can be routed by using the M2 layer.
- the routing of the second voltage line 155 can save the portion of the M4 layer routed for the voltage line. It is found that since the M1 layer is used to route the bit lines BL and BLB, the dimensions of the voltage lines 150 and 155 routed by using the M2 layer can be more flexible. It is noted that the number and/or sequence of the metal layers routed for the bit lines, voltage lines, and/or word line can be exchangeable. One of ordinary skill in the art can modify the routing of the metal layers to achieve a desired memory circuit. It is also noted that the number of the metal layers is not limited to the description in conjunction with FIGS. 2 and 3 .
- FIG. 4A is a schematic drawing showing a layout including a well layer, an oxide definition (OD) layer, a poly layer, a contact layer, and a first conductive layer, e.g., a metal 1 (M1) layer of a portion of an exemplary memory circuit.
- a portion of a memory circuit 400 can include memory cells 401 a - 401 d .
- the memory circuit 400 and each of the memory cells 401 a - 401 d can be similar to the memory circuit 100 and the memory cell 101 a , respectively, described above in conjunction with FIGS. 1-3 .
- Each of the memory cells 401 a - 401 d can include a well region 405 , e.g., N-well region.
- the well region 405 can be substantially parallel to the short side of the memory cell 401 a .
- OD regions 407 a - 407 c can be routed within the memory cell 401 a .
- Poly regions 409 a - 409 f can serve as gate nodes of the transistors 110 , 115 , 120 , 125 , 130 , and 135 (shown in FIG. 1 ), respectively.
- a contact 411 a can couple the source node of the transistor 110 with the power source V dd .
- a node 413 a of the M1 layer can couple the drain node of the transistor 110 with the source node of the transistor 130 , the drain node of the transistor 120 , and the gate node of the transistor 115 .
- a contact 411 b can couple the source node of the transistor 115 with the power source V dd .
- a node 413 b of the M1 layer can couple the drain node of the transistor 115 with the source node of the transistor 135 , the drain node of the transistor 125 , and the gate node of the transistor 110 .
- Contacts 411 c and 411 d can couple the source nodes of the transistors 120 and 125 , respectively, with the power source V ss .
- Contacts 411 e and 411 f can couple the bit line BL and bit line bar BLB with the drain nodes of the transistors 130 and 135 , respectively.
- Contacts 411 g and 411 h can couple the gate nodes of the transistors 130 and 135 , respectively, with the word line WL.
- the well layer, oxide definition (OD) layer, poly layer, contact layer, and metal 1 (M1) layer described above are mere examples.
- the memory circuit 400 can include more layers such as P-well layer or other semiconductor layer. Other arrangements are within the scope of this disclosure.
- FIG. 4B is a schematic drawing showing a layout including a second conductive layer, e.g., a metal 2 (M2) layer, a via 2 layer, and a third conductive layer, e.g., a metal 3 (M3) layer, over the layout show in FIG. 4A .
- the M2 layer can be routed for the bit lines BL, BLB, and the voltage lines 150 , 155 .
- the M3 can be routed for the word line WL.
- the M3 layer for the word line WL can have a width Ww of about 50% or more of the width We of the short side of the memory cell 401 a .
- the M2 layer can include landing pads 415 a and 415 b coupled with vias 2 (not labeled) through which the M2 layer can be coupled with the M3 layer.
- the M3 layer is substantially routed for the word line WL.
- the width of the word line WL can be desirably extended. By increasing the width of the word line WL, the resistance of the word line WL can decline. Due to the reduction of the resistance of the word line WL, an RC time delay of signals passing through the word line WL can be desirably reduced. The reduction of RC time delay can be substantially achieved if the word line WL is coupled with a great number memory cells, e.g., 128 , 256 , or more memory cells. Accordingly, the speed of the memory circuit 400 can be desirably enhanced.
- the memory cell 401 a can include additional metal layers and/or dielectric layers over the M3 layer. It is also noted that the layer number and number of layers of the metals and vias described above are mere examples. One of ordinary skill in the art can modify them to achieve a desired routing of the memory circuit.
- FIG. 5A is a schematic drawing showing another layout including a well layer, an oxide definition (OD) layer, a poly layer, a contact layer, and a first conductive layer, e.g., a metal 1 (M1) layer of a portion of an exemplary memory circuit.
- the elements indicated by the reference numerals in FIG. 5A are similar to those of the reference numerals shown in FIG. 4A increased by 100.
- the M1 layer can be routed for the bit line BL and bit line bar BLB.
- the M1 layer routed for the bit line BL and bit line bar BLB can be disposed adjacent to landing pads 521 a and 521 b of the M1 layer, respectively.
- the M1 layer routed for the bit line BL can be between the M1 layer for the landing pad 521 a and the node 513 a .
- the M1 layer routed for the bit line bar BLB can be between the landing pad 521 b and the node 513 a of the M1 layer.
- FIG. 5B is a schematic drawing showing another layout including a metal 1 (M1) layer, a via 1 layer, a second conductive layer, e.g., a metal 2 (M2) layer, a via 2 layer, and a third conductive layer, e.g., a metal 3 (M3) layer.
- the M1 layer can be routed for the bit lines BL and BLB.
- the M2 layer can be routed for the voltage lines 150 and 155 .
- the M3 can be routed for the word lines WL.
- the M3 layer for the word line WL can have a width Ww of about 50% or more of the width We of the short side of the memory cell 501 a .
- the M2 layer can include landing pads 515 a and 515 b coupled with vias 2 (not labeled) through which the M2 layer can be coupled with the M3 layer.
- bit line BL and the bit line bar BLB within the memory cell 501 a are routed by using the M1 layer.
- the disposition of the bit line BL and the bit line bar BLB within the M1 layer can desirably reduce coupling capacitances of the bit lines.
- the memory cell 501 a can include additional metal layers and/or dielectric layers over the M3 layer. It is also noted that the layer number and number of layers of the metals and vias described above are mere examples. One of ordinary skill in the art can modify them to achieve a desired routing of the memory circuit.
- FIG. 6 is a schematic drawing showing a system including an exemplary memory circuit.
- a system 600 can include a processor 610 coupled with the memory circuit 100 .
- the processor 610 is capable of accessing the datum stored in the memory cell 101 a (shown in FIG. 1 ) of the memory circuit 100 .
- the processor 610 can be a processing unit, central processing unit, digital signal processor, or other processor that is suitable for accessing data of memory circuit.
- the processor 610 and the memory circuit 100 can be formed within a system that can be physically and electrically coupled with a printed wiring board or printed circuit board (PCB) to form an electronic assembly.
- the electronic assembly can be part of an electronic system such as computers, wireless communication devices, computer-related peripherals, entertainment devices, or the like.
- the system 600 including the memory circuit 100 can provides an entire system in one IC, so-called system on a chip (SOC) or system on integrated circuit (SOIC) devices.
- SOC devices may provide, for example, all of the circuitry needed to implement a cell phone, personal data assistant (PDA), digital VCR, digital camcorder, digital camera, MP3 player, or the like in a single integrated circuit.
- PDA personal data assistant
- VCR digital VCR
- digital camcorder digital camera
- MP3 player or the like in a single integrated circuit.
- One aspect of this description relates to a memory circuit that comprises at least one memory cell for storing a datum, the memory cell being coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line.
- the memory circuit also comprises a first conductive layer arranged at a first level, the first conductive layer comprising a first landing pad and a second landing pad.
- the memory circuit further comprises a second conductive layer coupled to the first conductive layer and arranged at a second level different from the first level, the second conductive layer being routed to define the first voltage line and the second voltage line.
- the memory circuit additionally comprises a third conductive layer coupled to the second conductive layer and arranged at a third level different from the first level and the second level, the third conductive layer being routed to define the word line.
- the bit line is disposed adjacent to the first landing pad and the bit line bar is disposed adjacent to the second landing pad.
- a memory circuit that comprises at least one memory cell for storing a datum, the memory cell being coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line.
- the memory circuit also comprises a first metal layer arranged at a first level, the first metal layer comprising a first landing pad and a second landing pad.
- the memory circuit further comprises a second metal layer coupled to the first metal layer and arranged at a second level different from the first level, the second conductive layer being routed to define the first voltage line and the second voltage line.
- the memory circuit additionally comprises a third metal layer coupled to the second conductive layer and arranged over the second metal layer, the third conductive layer being routed to define the word line.
- the bit line is disposed adjacent to the first landing pad and the bit line bar is disposed adjacent to the second landing pad.
- a further aspect of this description relates to a memory circuit that comprises at least one memory cell for storing a datum, the memory cell being coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line.
- the memory circuit also comprises a first layer defining electrical connections within the memory cell, the first layer comprising a first landing pad and a second landing pad.
- the memory circuit further comprises a second layer coupled to the first layer, the second layer being routed to define the first voltage line.
- the memory circuit additionally comprises a third layer coupled to the second layer.
- the bit line is disposed adjacent to the first landing pad and the bit line bar is disposed adjacent to the second landing pad.
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Abstract
Description
- This application is a continuation of U.S. patent application Ser. No. 14/259,585, filed on Apr. 23, 2014, entitled “Memory Circuits and Routing of Conductive Layers Thereof,” which application is a continuation of U.S. patent application Ser. No. 12/638,946, now U.S. Pat. No. 8,737,107, filed on Dec. 15, 2009, entitled “Memory Circuits and Routing of Conductive Layers Thereof,” which claims the benefit of U.S. Provisional Patent Application No. 61/144,966, filed on Jan. 15, 2009, which applications are hereby incorporated herein by reference.
- The present disclosure relates generally to the field of semiconductor circuits, and more particularly, to memory circuits and routing of conductive layers thereof.
- Memory circuits have been used in various applications. Memory circuits can include DRAM, SRAM, and non-volatile memory circuits. A SRAM circuit includes a plurality of memory cells. For a 6-T static memory in which arrays of memory cells are provided, each of the memory cells consists of six transistors. The 6-T SRAM memory cell is coupled with a bit line BL, a bit line bar BLB, and a word line. Four of the six transistors form two cross-coupled inverters for storing a datum representing “0” or “1”. The remaining two transistors serve as access transistors to control the access of the datum stored within the memory cell.
- In one embodiment, a memory circuit includes at least one memory cell for storing a datum. The memory cell is coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line. The memory circuit includes a first conductive layer, a second conductive layer coupled with the first conductive layer, a third conductive layer coupled with the second conductive layer. The third conductive layer is routed for the word line and is free from including the bit line, the bit line bar, the first voltage line, and the second voltage line within the memory cell.
- In another embodiment, a memory circuit includes at least one memory cell for storing a datum. The memory cell is coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line.
- The memory circuit includes a first metal layer, a second metal layer electrically coupled with the first metal layer, a third metal layer electrically coupled with the second metal layer. The second metal layer is routed for the first voltage line and the second voltage line and the third metal layer is routed for the word line within the memory cell, wherein the second metal layer is below the third metal layer.
- In a further embodiment, a memory circuit includes at least one memory cell for storing a datum. The memory cell is coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line. The memory circuit includes a first metal layer defining electrical connections within the memory cell, a second metal layer electrically coupled with the first metal layer, a third metal layer electrically coupled with the second metal layer. The third metal layer routed for the word line within the memory cell has a width of about 50% or more of a width of a short side of the memory cell.
- These and other embodiments, as well as their features are described in more detail below with reference to the attached figures.
- The present disclosure is best understood from the following detailed description when read with the accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the numbers and dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
-
FIG. 1 is a schematic drawing illustrating an exemplary memory circuit. -
FIG. 2 is a schematic drawing showing running directions of bit lines, voltage lines, and word line within an exemplary memory cell. -
FIG. 3 is a schematic drawing showing running directions of bit lines, voltage lines, and word line within another exemplary memory cell. -
FIG. 4A is a schematic drawing showing a layout including a well layer, an oxide definition (OD) layer, a poly layer, a contact layer, and a metal 1 (M1) layer of a portion of an exemplary memory circuit. -
FIG. 4B is a schematic drawing showing a layout including a metal 2 (M2) layer, a via 2 layer, and a metal 3 (M3) layer over the layout show inFIG. 4A . -
FIG. 5A is a schematic drawing showing another layout including a well layer, an oxide definition (OD) layer, a poly layer, a contact layer, and a metal 1 (M1) layer of a portion of an exemplary memory circuit. -
FIG. 5B is a schematic drawing showing another layout including a metal 1 (M1) layer, a via 1 layer, a metal 2 (M2) layer, avia 2 layer, and a metal 3 (M3) layer. -
FIG. 6 is a schematic drawing showing a system including an exemplary memory circuit. - A 6-T SRAM memory cell, as discussed above, is also coupled with a power source Vdd and another power source Vss. The 6-T SRAM memory cell has a plurality of metal layers. A metal 3 (M3) layer of the 6-T SRAM memory cell is used for the word line WL and a local voltage line within the memory cell. The word line WL and the local voltage line are parallel to each other. A metal 4 (M4) layer over the M3 layer is routed for a voltage line that is configured to couple the local voltage line with the power source Vss. The metal 4 layer for the voltage line is orthogonal to the word line WL and the local voltage line.
- It is found that the routing using the M3 layer for the word line WL and the local voltage line results in the width of the word line WL not being able to be desirably extended. The situation becomes even worse if a thin style SRAM memory cell is used. The thin style SRAM memory cell has a ratio of its length to width of about 2.5 or more. The high ratio of length/width results in a narrow word line routing. The narrow word line increases the resistance of the word line that adversely affects an RC time delay of signals passing through the thin word line coupled with 128, 256 or more memory cells. Additionally, the M4 layer is used for the voltage line to pick up the local voltage line. A portion of the area of the M4 layer is consumed by routing for the voltage line.
- Based on the foregoing, routing of bit lines, voltage lines, and word lines of memory circuits thereof are desired.
- It is understood that the following disclosure provides many different embodiments, or examples, for implementing different features. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or dispositions discussed.
-
FIG. 1 is a schematic drawing illustrating an exemplary memory circuit. InFIG. 1 , amemory circuit 100 can include amemory array 101 including a plurality of word lines WLs and a plurality of bit lines BLs and BLBs. Thememory array 101 can be coupled with asense amplifier 105. Thememory circuit 100 can be a static random access memory (SRAM) circuit, an embedded SRAM circuit, dynamic random access memory (DRAM) circuit, an embedded DRAM circuit, a non-volatile memory, e.g., FLASH, EPROM, E2PROME, or other memory circuits. Thememory array 101 can include at least onememory cell 101 a. Thememory cell 101 a can be coupled with a bit line BL, a bit line bar BLB, a word line WL, afirst voltage line 150 coupled with a power source, e.g., Vdd, and asecond voltage line 155 coupled with another power source, e.g., Vss, of thememory array 101. Thesense amplifier 105 is capable of sensing a voltage difference between the bit line BL and the bit line bar BLB to output a signal representing the datum stored in thememory cell 101 a. For embodiments using a 6-T SRAM cell, thememory cell 101 a can includetransistors - It is noted that though only one
memory cell 101 a is depicted, other memory cells (not shown) can be coupled with the plurality of word lines and bit lines of thememory circuit 100. A portion of amemory circuit 100 may have 8, 16, 32, 64, 128 or more columns that can be arranged in word widths. In one or more embodiments, the word lines can be laid out substantially orthogonally to the bit lines. In other embodiments, other arrangements of the word lines and bit lines can be provided. - Ref erring again to
FIG. 1 , thememory cell 101 a can include thetransistors transistors transistors 130 and 135 are operable as two pass transistors, access transistors or pass gates. In one or more embodiments, thetransistors transistors first voltage line 150. The pull-down transistors can be configured to pull a potential towards the power source Vss coupled with thesecond voltage line 155. - In one or more embodiments, the source ends of the
transistors first voltage line 150 coupled with the power source Vdd. A drain of thetransistor 110 can be electrically coupled with a source of thetransistor 130, a drain of thetransistor 120, and a gate of thetransistor 115. A drain of thetransistor 115 can be electrically coupled with a source of the transistor 135, a drain of thetransistor 125, and a gate of thetransistor 110. The sources of thetransistors second voltage line 155 coupled with the power source Vss, e.g., ground, common or a voltage state that is lower than the power source Vdd. The gates of thetransistor 110 andtransistor 120 and the gates of thetransistor 115 and thetransistor 125 respectively can be electrically coupled. - Drains of the
transistors 130, 135 can be electrically coupled with the bit line BL and bit line bar BLB, respectively. The gates of thetransistors 130, 135 can be electrically coupled with the word line WL. The bit lines BL, BLB and the word line WL may extend to other memory cells of thememory array 101. It is noted that the number, type, and disposition of thetransistors -
FIG. 2 is a schematic drawing showing running directions of bit lines, voltage lines, and word line within an exemplary memory cell. As noted, the memory circuit 100 (shown inFIG. 1 ) can include a plurality of conductive layers, e.g., metal layers routed for the bit lines BL, BLB,voltage lines FIG. 2 , the M2 layer can be routed for the bit lines BL, BLB andvoltage lines memory cell 101 a, the M3 layer is free from being routed for the bit lines BL, BLB andvoltage lines first voltage line 150, and thesecond voltage line 155 within thememory cell 101 a. In one or more embodiments, thememory cell 101 a can have a long side having a length Lc and a short side having a width Wc. A ratio of Lc/Wc can be about 2.5 or more. In other embodiments, the ratio can be about 3 or more. In other embodiments, within thememory cell 101 a a ratio of the length of the word line to the length of the bit line BL can be about 2.5 or more. In still other embodiments, the ratio can be about 3 or more. - In one or more embodiments, within the
memory cell 101 a, the M2 layer routed for the bit line BL can be disposed between thefirst voltage line 150 and thesecond voltage line 155 of the M2 layer. The M2 layer routed for the bit line bar BLB can be disposed between thefirst voltage line 150 and thesecond voltage line 155 of the M2 layer. In other embodiments, the M2 layer routed for thesecond voltage line 155 can be disposed between thefirst voltage line 150 and the bit line BL of the M2 layer. The M2 layer routed for thesecond voltage line 155 can be disposed between thefirst voltage line 150 and the bit line bar BLB of the M2 layer. It is found that the bit line BL and the bit line bar BLB can be desirably shielded by thefirst voltage line 150 and/or thesecond voltage line 155. The voltages on the bit line BL and the bit line bar BLB can be desirably prevented from being disturbed by accesses of other ports. -
FIG. 3 is a schematic drawing showing running directions of bit lines, voltage lines, and word line within another exemplary memory cell. InFIG. 3 , the M1 layer can be routed for the bit lines BL and BLB. The M2 layer can be routed for thevoltage lines memory cell 101 a, the M3 layer is free from being routed for the bit lines BL, BLB andvoltage lines - In one or more embodiments, within the
memory cell 101 a, the M2 layer routed for thesecond voltage line 155 can be disposed between thefirst voltage line 150 of the M2 layer and the bit line BL of the M1 layer. The M2 layer routed for thesecond voltage line 155 can be disposed between thefirst voltage line 150 of the M2 layer and the bit line bar BLB of the M1 layer. As noted, the M3 layer routed for the word line WL can be substantially orthogonal to the M1 layer routed for the bit lines BL, BLB and the M2 layer routed for thevoltage lines - As noted, the
second voltage line 155 coupled with the power source Vss can be routed by using the M2 layer. In contrast to the discussed routing using a metal 4 (M4) layer for a voltage line to couple a local voltage line with the power source Vss, the routing of thesecond voltage line 155 can save the portion of the M4 layer routed for the voltage line. It is found that since the M1 layer is used to route the bit lines BL and BLB, the dimensions of thevoltage lines FIGS. 2 and 3 . -
FIG. 4A is a schematic drawing showing a layout including a well layer, an oxide definition (OD) layer, a poly layer, a contact layer, and a first conductive layer, e.g., a metal 1 (M1) layer of a portion of an exemplary memory circuit. InFIG. 4A , a portion of amemory circuit 400 can include memory cells 401 a-401 d. Thememory circuit 400 and each of the memory cells 401 a-401 d can be similar to thememory circuit 100 and thememory cell 101 a, respectively, described above in conjunction withFIGS. 1-3 . - Each of the memory cells 401 a-401 d can include a well region 405, e.g., N-well region. The well region 405 can be substantially parallel to the short side of the
memory cell 401 a. OD regions 407 a-407 c can be routed within thememory cell 401 a. Poly regions 409 a-409 f can serve as gate nodes of thetransistors FIG. 1 ), respectively. - A
contact 411 a can couple the source node of thetransistor 110 with the power source Vdd. A node 413 a of the M1 layer can couple the drain node of thetransistor 110 with the source node of thetransistor 130, the drain node of thetransistor 120, and the gate node of thetransistor 115. Similarly, a contact 411 b can couple the source node of thetransistor 115 with the power source Vdd. A node 413 b of the M1 layer can couple the drain node of thetransistor 115 with the source node of the transistor 135, the drain node of thetransistor 125, and the gate node of thetransistor 110.Contacts transistors transistors 130 and 135, respectively.Contacts transistors 130 and 135, respectively, with the word line WL. It is noted that the well layer, oxide definition (OD) layer, poly layer, contact layer, and metal 1 (M1) layer described above are mere examples. Thememory circuit 400 can include more layers such as P-well layer or other semiconductor layer. Other arrangements are within the scope of this disclosure. -
FIG. 4B is a schematic drawing showing a layout including a second conductive layer, e.g., a metal 2 (M2) layer, a via 2 layer, and a third conductive layer, e.g., a metal 3 (M3) layer, over the layout show inFIG. 4A . InFIG. 4B , the M2 layer can be routed for the bit lines BL, BLB, and thevoltage lines memory cell 401 a. In one or more embodiments, the M2 layer can includelanding pads 415 a and 415 b coupled with vias 2 (not labeled) through which the M2 layer can be coupled with the M3 layer. - It is found that within the
memory cell 401 a the M3 layer is substantially routed for the word line WL. The width of the word line WL can be desirably extended. By increasing the width of the word line WL, the resistance of the word line WL can decline. Due to the reduction of the resistance of the word line WL, an RC time delay of signals passing through the word line WL can be desirably reduced. The reduction of RC time delay can be substantially achieved if the word line WL is coupled with a great number memory cells, e.g., 128, 256, or more memory cells. Accordingly, the speed of thememory circuit 400 can be desirably enhanced. It is noted that thememory cell 401 a can include additional metal layers and/or dielectric layers over the M3 layer. It is also noted that the layer number and number of layers of the metals and vias described above are mere examples. One of ordinary skill in the art can modify them to achieve a desired routing of the memory circuit. -
FIG. 5A is a schematic drawing showing another layout including a well layer, an oxide definition (OD) layer, a poly layer, a contact layer, and a first conductive layer, e.g., a metal 1 (M1) layer of a portion of an exemplary memory circuit. The elements indicated by the reference numerals inFIG. 5A are similar to those of the reference numerals shown inFIG. 4A increased by 100. InFIG. 5A , the M1 layer can be routed for the bit line BL and bit line bar BLB. The M1 layer routed for the bit line BL and bit line bar BLB can be disposed adjacent to landing pads 521 a and 521 b of the M1 layer, respectively. In one or more embodiments, the M1 layer routed for the bit line BL can be between the M1 layer for the landing pad 521 a and the node 513 a. The M1 layer routed for the bit line bar BLB can be between the landing pad 521 b and the node 513 a of the M1 layer. -
FIG. 5B is a schematic drawing showing another layout including a metal 1 (M1) layer, a via 1 layer, a second conductive layer, e.g., a metal 2 (M2) layer, a via 2 layer, and a third conductive layer, e.g., a metal 3 (M3) layer. InFIG. 5B , the M1 layer can be routed for the bit lines BL and BLB. The M2 layer can be routed for thevoltage lines memory cell 501 a. In one or more embodiments, the M2 layer can includelanding pads 515 a and 515 b coupled with vias 2 (not labeled) through which the M2 layer can be coupled with the M3 layer. - It is found that the bit line BL and the bit line bar BLB within the
memory cell 501 a are routed by using the M1 layer. The disposition of the bit line BL and the bit line bar BLB within the M1 layer can desirably reduce coupling capacitances of the bit lines. It is noted that thememory cell 501 a can include additional metal layers and/or dielectric layers over the M3 layer. It is also noted that the layer number and number of layers of the metals and vias described above are mere examples. One of ordinary skill in the art can modify them to achieve a desired routing of the memory circuit. -
FIG. 6 is a schematic drawing showing a system including an exemplary memory circuit. InFIG. 6 , asystem 600 can include aprocessor 610 coupled with thememory circuit 100. Theprocessor 610 is capable of accessing the datum stored in thememory cell 101 a (shown inFIG. 1 ) of thememory circuit 100. In one or more embodiments, theprocessor 610 can be a processing unit, central processing unit, digital signal processor, or other processor that is suitable for accessing data of memory circuit. - In one or more embodiments, the
processor 610 and thememory circuit 100 can be formed within a system that can be physically and electrically coupled with a printed wiring board or printed circuit board (PCB) to form an electronic assembly. The electronic assembly can be part of an electronic system such as computers, wireless communication devices, computer-related peripherals, entertainment devices, or the like. - In one or more embodiments, the
system 600 including thememory circuit 100 can provides an entire system in one IC, so-called system on a chip (SOC) or system on integrated circuit (SOIC) devices. These SOC devices may provide, for example, all of the circuitry needed to implement a cell phone, personal data assistant (PDA), digital VCR, digital camcorder, digital camera, MP3 player, or the like in a single integrated circuit. - One aspect of this description relates to a memory circuit that comprises at least one memory cell for storing a datum, the memory cell being coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line. The memory circuit also comprises a first conductive layer arranged at a first level, the first conductive layer comprising a first landing pad and a second landing pad. The memory circuit further comprises a second conductive layer coupled to the first conductive layer and arranged at a second level different from the first level, the second conductive layer being routed to define the first voltage line and the second voltage line. The memory circuit additionally comprises a third conductive layer coupled to the second conductive layer and arranged at a third level different from the first level and the second level, the third conductive layer being routed to define the word line. The bit line is disposed adjacent to the first landing pad and the bit line bar is disposed adjacent to the second landing pad.
- Another aspect of this description relates to a memory circuit that comprises at least one memory cell for storing a datum, the memory cell being coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line. The memory circuit also comprises a first metal layer arranged at a first level, the first metal layer comprising a first landing pad and a second landing pad. The memory circuit further comprises a second metal layer coupled to the first metal layer and arranged at a second level different from the first level, the second conductive layer being routed to define the first voltage line and the second voltage line. The memory circuit additionally comprises a third metal layer coupled to the second conductive layer and arranged over the second metal layer, the third conductive layer being routed to define the word line. The bit line is disposed adjacent to the first landing pad and the bit line bar is disposed adjacent to the second landing pad.
- A further aspect of this description relates to a memory circuit that comprises at least one memory cell for storing a datum, the memory cell being coupled with a word line, a bit line, a bit line bar, a first voltage line, and a second voltage line. The memory circuit also comprises a first layer defining electrical connections within the memory cell, the first layer comprising a first landing pad and a second landing pad. The memory circuit further comprises a second layer coupled to the first layer, the second layer being routed to define the first voltage line. The memory circuit additionally comprises a third layer coupled to the second layer. The bit line is disposed adjacent to the first landing pad and the bit line bar is disposed adjacent to the second landing pad.
- The foregoing outlines features of several embodiments so that those ordinarily skilled in the art may better understand the aspects of the present disclosure. Those ordinarily skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same or similar purposes and/or achieving the same or similar advantages of the embodiments introduced herein. Those ordinarily skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (20)
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US20140232009A1 (en) | 2014-08-21 |
US8737107B2 (en) | 2014-05-27 |
JP2010166056A (en) | 2010-07-29 |
KR101099976B1 (en) | 2011-12-28 |
TWI416707B (en) | 2013-11-21 |
TW201030941A (en) | 2010-08-16 |
CN101783169A (en) | 2010-07-21 |
JP5235915B2 (en) | 2013-07-10 |
US10170408B2 (en) | 2019-01-01 |
KR20100084125A (en) | 2010-07-23 |
CN105097013A (en) | 2015-11-25 |
US20100177545A1 (en) | 2010-07-15 |
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