US20180301448A1 - Two Dimension Material Fin Sidewall - Google Patents
Two Dimension Material Fin Sidewall Download PDFInfo
- Publication number
- US20180301448A1 US20180301448A1 US15/799,247 US201715799247A US2018301448A1 US 20180301448 A1 US20180301448 A1 US 20180301448A1 US 201715799247 A US201715799247 A US 201715799247A US 2018301448 A1 US2018301448 A1 US 2018301448A1
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- Prior art keywords
- fin
- layer
- forming
- mask
- channel
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- 239000000463 material Substances 0.000 title claims abstract description 123
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
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- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
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- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
Definitions
- the present invention generally relates to integrated circuits, and more particularly to fin field effect transistors (finFETs) that include fins having a two dimension (2D) material sidewall.
- finFETs fin field effect transistors
- CMOS complementary metal oxide semiconductor
- MOSFETs metal oxide semiconductor field effect transistors
- SOI silicon or silicon-on-insulator
- Source and drain regions associated with the MOSFET are connected by a channel.
- a gate disposed over the channel controls the flow of current between the source and drain regions.
- the source region, channel, and drain region may be defined by a fin that provides more than one surface through which the gate controls the flow of current, thereby making the MOSFET a “finFET” device.
- a 2D material is a crystalline material consisting of a single layer of atoms.
- Graphene a particular type of 2D material, is an allotrope of carbon in the form of a two-dimensional, atomic-scale, hexagonal lattice in which one atom forms each vertex.
- a semiconductor structure fabrication method includes forming neighboring fins within a semiconductor substrate separated by a fin well and forming a fin cap upon each fin.
- the method further includes forming a 2D material upon sidewalls fins and upon a bottom surface of the fin well within a source region, within a drain region, and within a channel region.
- the method further includes forming a channel mask upon the 2D material and upon the fin caps within the channel region and forming a source contact adjacent to the channel mask within the source region and forming a drain contact adjacent to the channel mask within the drain region.
- the method further includes exposing the 2D material and the fin caps within the channel region by removing the channel mask, forming a gate dielectric upon the exposed 2D material and upon the exposed fin caps within the channel region, and forming a gate upon the gate dielectric.
- a semiconductor structure in another embodiment, includes a substrate, neighboring fins within the substrate separated by a fin well, and a fin cap upon each fin.
- the semiconductor structure further includes a 2D material upon sidewalls of the fins and upon a bottom surface of the fin well within a source region, within a drain region, and within a channel region.
- the semiconductor structure further includes a source contact within the source region and a drain contact within the drain region, a gate dielectric upon the 2D material and upon the fin caps within the channel region, and a gate upon the gate dielectric.
- a finFET in another embodiment of the present invention, includes a substrate, neighboring fins within the substrate separated by a fin well, and a fin cap upon each fin.
- the finFET further includes a 2D material upon sidewalls of the fins and upon a bottom surface of the fin well within a source region, within a drain region, and within a channel region.
- the finFET further includes a source contact within the source region and a drain contact within the drain region, a gate dielectric upon the 2D material and upon the fin caps within the channel region, and a gate upon the gate dielectric.
- FIG. 1 illustrates a semiconductor structure that includes a fin having 2D material sidewalls, according to one or more exemplary embodiments of the present invention.
- FIG. 2A - FIG. 12 illustrates fabrication stages of a semiconductor structure that includes a fin having 2D material sidewalls, according to exemplary embodiments of the present invention.
- FIG. 13A and FIG. 13B illustrate fabrication stages of a semiconductor structure that includes a fin having 2D material sidewalls, according to exemplary embodiments of the present invention.
- FIG. 14 - FIG. 16 illustrate semiconductor structure that includes a fin having 2D material sidewalls, according to one or more exemplary embodiments of the present invention.
- FIG. 17 - FIG. 19 illustrate fabrication methods of a semiconductor structure that includes a fin having 2D material sidewalls, according to exemplary embodiments of the present invention.
- FIG. 20 - FIG. 23 illustrates fabrication stages of a semiconductor structure that includes a fin having 2D material sidewalls, according to exemplary embodiments of the present invention.
- Embodiments of the invention relate to the fabrication of finFET devices and more particularly, to a device with a fin that has a 2D material sidewall.
- the band gap decreases. This is the result of the physical constriction of conduction channels in a semiconductor (for example, in nanowires, 2D Electron-Gas, etc.).
- the thickness of the 2D material sidewall may establish the existence of a band gap.
- Monolayer Graphene does not have a band gap unless it is mechanically strained, submitted to a strong perpendicular electric field, chemically doped, or is constricted as in this invention.
- Bilayer Graphene on the other hand, does have a band gap in its pristine state even without a constriction. Band gaps of up to 300 meV may be obtained in monolayer Graphene using constrictions alone.
- an exemplary semiconductor structure 100 such as a wafer, IC chip, etc., includes a silicon carbide (SiC) substrate 102 , fins 120 formed from the SiC substrate 102 , a fin cap 104 ′ upon the top of each fin 120 , a 2D layer 130 upon the sidewalls of fins 120 and upon bottom of the fin well upon substrate 102 between fins 120 , a source contact 151 that is formed upon the 2D layer 130 and upon the fin caps 104 ′ within source region 150 , a drain contact 161 that is formed upon the 2D layer 130 and upon the fin caps 104 ′ within drain region 160 , a gate dielectric 180 ′ upon the 2D layer 130 and upon the fin caps 104 ′ within channel region 155 , and a gate 190 upon the gate dielectric 180 ′.
- SiC silicon carbide
- the width of 2D layer 130 and the height of the fin 120 may be adjusted to achieve desired band gap properties.
- the width of the 2D layer is defined by the fin spacing plus two times the fin height up to the fin cap 104 ′.
- FIG. 2A depicting semiconductor structure 100 at an exemplary initial fabrication stage.
- a fin cap layer 104 is formed upon SiC substrate 102
- a mandrel base layer 106 is formed upon fin cap layer 104
- a mandrel layer 108 is formed upon the mandrel base layer 106
- a lithography layer(s) 110 is formed upon the mandrel layer 108 .
- SiC substrate 102 is a Silicon Carbide substrate and may be about, but is not limited to, several hundred microns thick.
- the substrate 102 has a thickness ranging from about 700 nm to about 700 um.
- the substrate 102 may have a thickness ranging from about 400 um to about 700 um.
- Fin cap layer 104 is formed from a material which a particular 2D material is not formed upon during a subsequent carbide formation fabrication stage further described below.
- fin cap layer 104 may be formed by depositing Silicon Nitride upon the substrate 102 .
- the fin cap layer 104 has a thickness ranging from about 5 nm to about 200 nm. In one embodiment, the fin cap layer 104 may have a thickness ranging from about 5 nm to about 50 nm.
- Mandrel base layer 106 is formed from a material which a mandrel may be fabricated thereupon during a subsequent fabrication stage further described below.
- mandrel base layer 106 is formed from undoped silicon glass (USG).
- Mandrel base layer 106 has a thickness ranging from about 5 nm to about 200 nm. In one embodiment, the mandrel base layer 106 may have a thickness ranging from about 20 nm to about 200 nm.
- Mandrel layer 108 is formed from a material that which may be selectively removed so that remaining portions thereof form mandrels.
- mandrel layer 108 is formed from amorphous Silicon Carbide.
- Mandrel layer 108 has a thickness ranging from about 50 nm to about 200 nm. In one embodiment, the mandrel layer 108 may have a thickness ranging from about 20 nm to about 200 nm.
- Lithography layer(s) 110 are formed from one or more material layers used to selectively remove portions of mandrel layer 108 and to retain portions of mandrel layer 108 .
- lithography layers 110 include an optical dense layer, a SiC layer, an anti-reflective layer, and a photoresist layer.
- Such lithograph layer(s) 110 may be patterned, as is known in the art, in order to expose portions of the underlying mandrel layer 108 so that some portions of mandrel layer 108 may be subsequently removed and other portions of mandrel layer 108 may be retained.
- mandrels 108 ′ are formed from mandrel layer 108 and a spacer layer 112 is formed upon the mandrel base layer 106 and the mandrels 108 ′.
- the removal of portions of mandrel layer 108 and retention of mandrels 108 ′ from mandrel layer 108 may be achieved by known subtractive etching techniques.
- an etchant chosen to remove the material of mandrel layer 108 and to stop at the mandrel base layer 106 may be used to, for instance, remove portions of mandrel layer 108 that are exposed by the developing/patterning of the lithograph layer(s) 110 .
- mandrels 108 ′ may be formed by other fabrication techniques without deviating from those embodiments herein claimed.
- mandrels 108 ′ may undergo further fabrication processing stages in order to achieve appropriate functions desired of mandrels 108 .
- Spacer layer 112 is formed from one or more materials that are selective to an etchant that removes mandrels 108 ′ and that mask an etchant from removing material of the mandrel base layer 106 and fin cap layer 104 during a subsequent fabrication stage further described below.
- spacer layer 112 is formed by depositing Silicon Oxide upon the mandrel base layer 106 and upon mandrels 108 ′.
- Spacer layer 112 has a thickness ranging from about 10 nm to about 100 nm. In one embodiment, the spacer layer 112 may have a thickness ranging from about 50 nm to about 100 nm.
- spacers 112 ′ are formed from spacer layer 112 .
- Spacers 112 ′ are generally formed by retaining the spacer layer 112 material on the sidewalls of mandrels 108 ′ and by removing the undesired other portions of spacer layer 112 material not upon the sidewalls of mandrels 108 ′. Additional selective removal techniques to form spacers 112 ′ upon the sidewalls of mandrels 108 ′ are generally known in the art.
- FIG. 4 depicting semiconductor structure 100 at an intermediate fabrication stage.
- spacers 112 ′ are retained upon mandrel base layer 106 and mandrels 108 ′ are removed.
- the removal of mandrels 108 ′ may be achieved by subtractive etching techniques where an etchant selectively removes only the materials of mandrels 108 ′ and does not remove the material of spacers 112 ′ or mandrel base layer 106 .
- mandrels 108 ′ and the retention of spacers 112 ′ generally form an array of spacers 112 ′ across the surface of mandrel base layer 106 , as is exemplary shown in the lower view of FIG. 4 . As such, portions of mandrel base layer 106 are exposed (i.e. there is no spacer 112 ′ there above) and other portions of mandrel base layer 106 are covered (i.e. there is a spacer 112 ′ there above).
- fin mask 105 is formed from mandrel base layer 106 and fin cap layer 104 .
- Fin mask 105 includes a retained portion 106 ′ of mandrel base layer 106 that was previously covered (i.e. there was a spacer 112 ′ there above) and includes a retained portion 104 ′ of fin cap layer 104 below the portion 106 ′.
- Fin mask 105 may be formed by removing the spacers 112 ′ and the exposed portions of mandrel base layer 106 . Additional selective removal techniques to form fin mask 105 are generally known in the art.
- Fin mask 105 generally masks portions of substrate 102 . Fin mask 105 does not cover exposed portions of substrate 102 (i.e. there is no fin mask 105 there above) and fin mask 105 covers other portions of substrate 102 (i.e. there is a fin mask 105 there above).
- Each fin structure includes a fin 120 formed from substrate 102 and includes a retained portion 104 ′, referred to as a fin cap 104 ′, upon the fin 120 .
- the fin structures may be formed by removing fin mask 105 and partially removing the exposed portions of substrate 102 . Additional selective removal techniques to form fin structures are generally known in the art.
- Each fin well 121 includes a fin sidewall of a left fin 120 , a fin sidewall from a right fin 120 neighboring the left fin 120 , and a bottom well surface that connects the aforementioned sidewalls.
- 2D layer 130 is formed within the fin wells 121 by forming a 2D material upon the exposed surfaces of substrate 102 .
- the particular deposition techniques may be selected to achieve desired thickness of 2D layer 130 in order to control finFET band gap properties.
- Ar gas is used to achieve slower sublimation of Si from the SiC surface at high temperatures (e.g., 750° C., or the like) to achieve a few monolayers of Graphene in a controlled manner (each Graphene monolayer is about 0.35 nm thick).
- a 2D material is a crystalline material consisting of a single layer of atoms.
- a thickness of the 2D layer 130 has a thickness of about 0.6 nm to about 3 nm, such as about 0.6 nm.
- 2D layer 130 has a thickness ranging from about 0.2 nm to about 5 nm.
- the 2D layer 130 may have a thickness ranging from about 0.35 nm to about 3.5 nm.
- 2D layer 130 will act as a layer in which the source region 150 drain region 160 and channel region 155 are formed.
- Suitable materials include, for example, graphene, TMDs, BN, or the like. Generally, a thin layer such as one or a few monolayers of a 2D material is deposited. Examples of suitable TMDs include MoO3 MoS2, WS2, WSe2, MoSe2, MoTe2, and the like.
- one or a few monolayers of graphene, a TMD, BN or the like is formed using, for example, chemical vapor deposition (CVD), atmospheric pressure CVD (APCVD), low-pressure CVD (LPCVD) at a sub-atmospheric pressure, plasma enhanced CVD (PECVD), atomic layer CVD (ALCVD), or combinations thereof.
- CVD chemical vapor deposition
- APCVD atmospheric pressure CVD
- LPCVD low-pressure CVD
- PECVD plasma enhanced CVD
- ACVD atomic layer CVD
- a graphene layer may be formed using CH 4 +H 2 +Ar.
- blanket layer 140 is formed upon the 2D layer 130 and upon the fin caps 104 ′.
- Blanket layer 140 is formed from a material that may be etched from structure 100 without damage to the underlying 2D layer 130 and without damage to the fin caps 104 ′.
- the blanket layer 140 may be a negative tone resist such as KemLab 1600, a positive tone resist with a lift-off resist underlayer such as LOR or PMGI, or an image reversal resist such AZ 5215E photoresist, or the like.
- the blanket layer 140 may be formed to a thickness greater than the height of the fin structures such that the blanket layer 140 covers the fin caps 104 ′.
- FIG. 9 depicting semiconductor structure 100 at an intermediate fabrication stage.
- portions of blanket layer 140 within source region 150 and within drain region 160 are removed.
- the removal of portions of blanket layer 140 may be achieved by lithography of the 140 photoresist or ebeam resist and subsequent development.
- the developer removes the material of blanket layer 140 from the source region 150 and from drain region 160 while retaining the 2D layer 130 and fin caps 104 ′ within the source region 150 and within the drain region 160 , while also retaining the blanket layer 140 material in channel region 155 .
- the blanket layer 140 that remains in channel region 155 may be herein referred to as channel mask 140 . Additional lithographic techniques to achieve selective removal of portions of blanket layer 140 are generally known in the art.
- source/drain layer 170 is formed upon top surface of the retained blanket layer 140 in channel region 155 and upon the 2D layer 130 and upon the fin caps 104 ′ within source region 150 and within drain region 160 .
- Source/drain layer 170 is formed from a material that may be desired to form a source contact and a drain contact.
- the source/drain layer 170 may be Pd, Au (with Cr adhesion layer), Pt, or the like.
- a liftoff process is realized in which a solvent such as Microposit Remover 1165 or acetone removes the remaining retained blanket layer 140 and leaves behind source/drain layer 170 only in the regions that it does not cover 140 .
- the liftoff process removes the retained blanket layer 140 and portion of the source/drain layer 170 which is thereupon.
- FIG. 11 depicting semiconductor structure 100 at an intermediate fabrication stage.
- the remaining blanket layer 140 within channel region 155 is removed by the liftoff process, source contact 151 is formed, and drain contact 161 is formed.
- the removal of blanket layer 140 may be achieved by a liftoff technique where a solvent such as Microposit Remover 1165 or acetone removes the material of blanket layer 140 from the channel region 155 , thus also taking away the above source/drain layer 170 material thereupon, while retaining the source/drain layer 170 material within source region 150 and within drain region 160 .
- Liftoff techniques to achieve selective removal of the blanket layer 140 within channel region 150 , and the source/drain layer 170 there above, are generally known in the art.
- mask layer 175 is formed upon the 2D layer 130 in channel region 155 (not shown), upon source contact 151 , and upon drain contact 161 .
- Mask layer 175 is formed from a material that may be etched from structure 100 without damage to the underlying 2D layer 130 , without damage to the source contact 151 , and without damage to drain contact 161 .
- the mask layer 175 may be spun on negative tone resist such as KemLab 1600, a positive tone resist with a lift-off resist underlayer such as LOR or PMGI, or an image reversal resist such AZ 5215E, or the like.
- the portion of mask layer 175 upon 2D layer 130 within channel region 155 is subsequently removed forming a channel well 171 .
- the removal of portions of mask layer 175 may be achieved by lithographic exposure of the mask layer 175 and subsequent development techniques where a developer such as TMAH removes the material of mask layer 175 from the channel region 155 while retaining the 2D layer 130 within the channel region 155 , while also retaining the mask layer 175 material upon source contact 151 and upon drain contact 161 .
- the retained mask layer 175 material upon source contact 151 and upon drain contact 161 is herein referred to as source/drain mask 175 .
- Additional appropriate developers for any given resist used to achieve selective removal of portions of mask layer 175 from channel region 155 to form the channel well 171 are generally known in the art.
- gate dielectric layer 180 is formed upon the 2D layer 130 and upon fin caps 104 ′ in channel region 155 and upon the source/drain mask 175 , and gate layer 190 ′ is formed upon gate dielectric layer 180 .
- gate dielectric layer 180 is formed upon the 2D layer 130 and upon fin caps 104 ′ in channel region 155 and upon the source/drain mask 175 in source region 150 and in drain region 160 .
- Gate dielectric layer 180 may be formed from a known gate dielectric material, such as Aluminum Oxide, or the like.
- the gate dielectric layer 180 may be deposited upon the 2D layer 130 and fin caps 104 ′ in channel region 155 and upon the source/drain mask 175 utilizing Atomic Level Deposition (ALD) techniques.
- ALD Atomic Level Deposition
- the gate dielectric layer 180 may be formed from a high k dielectric material having a greater dielectric constant as compared to silicon dioxide, using any of several known methods, for example, thermal or plasma oxidation or nitridation methods, chemical vapor deposition methods, and physical vapor deposition methods.
- gate layer 190 ′ may be formed upon the gate dielectric layer 180 .
- Gate layer 190 ′ is formed by any suitable deposition technique, including but not limited to atomic layer deposition, chemical vapor deposition, physical vapor deposition, sputtering, plating, etc.
- gate layer 190 ′ may be formed by an evaporated metal such as Al or Pd.
- the portion of gate layer 190 ′ within the channel well 171 that is retained is herein referred to as gate 190 .
- the portions of the gate layer 190 ′ not in the channel well 171 are removed.
- the portions of the gate layer 190 ′ not in the channel well 171 may be removed by known removal techniques such as CMP techniques, lithographic techniques, or the like.
- the portions of gate dielectric layer 180 upon the source/drain mask 175 are also removed while the portion of gate dielectric layer 180 upon 2D layer 130 and fin caps 104 ′ within the channel well 171 are retained underneath the gate 190 .
- the removal of portions of dielectric layer 180 may be achieved by lithographic exposure of the mask layer 180 and subsequent development techniques where a developer such as TMAH removes the material of dielectric layer 180 from the source/drain mask 175 while retaining the dielectric layer 180 upon the 2D layer 130 and upon the fin caps 104 ′ within the channel well 171 . Additional appropriate developers for any given resist used to achieve selective removal of portions of gate dielectric layer 180 to form the gate dielectric 180 are generally known in the art. In such technique, the source/drain mask is subsequently removed.
- the removal of portions of dielectric layer 180 may be alternatively achieved by subtractive etching techniques where an etchant removes the material of source/drain mask 175 while resultantly also removing the portions of dielectric layer 180 upon the source/drain mask 175 .
- gate dielectric 180 ′ the portion of dielectric layer 180 that remains within the channel well 171 is herein referred to as gate dielectric 180 ′.
- gate 190 has been formed upon the gate dielectric 180 ′ by retaining gate 190 from the gate layer 190 ′ and by retaining gate dielectric 180 ′ from dielectric layer 180 and removing the respective undesired portions of gate layer 190 ′ and dielectric layer 180 .
- the presented fabrication flow results in structure 100 including a layer of 2D material 130 on the sidewalls of fins 120 and upon the bottom surface of fin wells 121 within the source region 150 , within drain region 160 , and within the channel region 155 underneath gate 190 .
- structure 100 includes fin caps 104 ′ upon each fin 120 so that 2D material 130 is not formed above the top surface of each fin 120 .
- structure 200 includes 2D layer 130 upon the sidewalls and upper surface of fins 120 within the source region 150 , within drain region 160 , and within the channel region 155 underneath gate 190 .
- Structure 200 may be formed by fabrication method 500 , depicted in FIG. 18 .
- structure 200 includes well-plugs 202 at the bottom of fin wells 121 so that 2D material 130 is not upon the substrate 102 surface at the bottom of the fin wells 121 .
- structure 300 includes 2D layer 130 only upon the sidewalls of fins 120 within the source region 150 , within drain region 160 , and within the channel region 155 underneath gate 190 .
- Structure 300 may be formed by fabrication method 600 , depicted in FIG. 19 .
- structure 300 includes well-plugs 202 at the bottom of fin wells 121 so that 2D material 130 is not upon the substrate 102 surface at the bottom of the fin wells 121 .
- Structure 300 also includes fin caps 104 ′ upon the top surface of each fin 120 so that 2D material 130 is not formed above the top surface of each fin 120 . As such, 2D material 130 is only formed upon the sidewalls of each fin 120 .
- FIG. 17 illustrates fabrication method 400 of semiconductor structure 100 that includes a fin 120 having 2D material 130 sidewalls.
- Method 400 begins at block 402 and continues with forming fin structures within substrate 102 (block 404 ).
- Each fin structure includes a fin 120 and a fin cap 104 ′ upon the top surface of the fin 120 .
- the fins 120 may be formed by fabrication techniques depicted in FIG. 1 - FIG. 6 and associated text.
- Method 400 may continue with forming 2D layer 130 upon the fin 120 sidewalls and upon the bottom surface of the fin well 121 (block 406 ).
- a graphene layer is formed upon the fin 120 sidewalls and the bottom surface of fin wells 121 .
- Method 400 may continue with forming a channel mask 140 upon the 2D layer 130 and upon fin caps 104 ′ within channel region 155 (block 408 ).
- Forming the channel mask 140 may include forming a blanket layer and removing portions of the blanket layer in source region 150 and in drain region 160 , such that a remaining portion of the blanket layer in channel region 155 form channel mask 140 .
- Method 400 may continue with forming a source contact 151 and forming a drain contact 161 upon the 2D layer 130 and upon fin caps 104 ′ adjacent to the channel mask 140 within source region 150 and within drain region 160 , respectively (block 410 ).
- the source contact 151 and drain contact 161 may be formed by depositing source/drain material 170 upon the channel mask 140 and upon the 2D material 130 and fin caps 104 ′ in source region 150 and drain region 160 .
- the source/drain material 170 in source region 150 and in drain region 160 may generally form source contact 151 and forms drain contact 161 , respectively.
- Method 400 may continue with removing the channel mask 140 to expose 2D material layer 130 and fin caps 104 ′ within channel region 155 (block 412 ).
- the removal of channel mask 140 may also remove with it excess source/drain layer 170 there above.
- Method 400 may continue with forming source contact mask 175 and drain contact mask 175 thereby forming channel well 171 having exposed 2D layer 130 and fin caps 104 ′ within channel region 155 (block 414 ).
- the contact mask 175 may be formed by depositing a mask material that may be removed without damage to the underlying 2D layer 130 and without damage to the underlying fin caps 104 ′ within channel region 155 and upon the source contact 151 and drain contact 161 . Subsequently, the mask material may be removed within the channel region 155 thereby forming channel well 171 and the mask material covering the source contact 151 and drain contact 161 is retained.
- the geometry of channel well 171 may be chosen to result in the desired geometry of gate 190 that may be formed therewithin.
- Method 400 may continue with forming gate dielectric layer 180 upon the source contact mask and the drain contact mask and upon the exposed 2D layer 130 and fin caps 104 ′ within channel well 171 (block 416 ).
- a retained gate dielectric 180 ′ may be formed by removing some portions of gate dielectric layer 180 material that are not upon the bottom surfaces of channel well 171 within channel region 155 .
- Method 400 may continue with forming gate 190 upon the retained gate dielectric 180 ′ (block 420 ). Method 400 ends at block 422 .
- FIG. 18 illustrates fabrication method 500 of semiconductor structure 200 that includes a fin 120 having 2D material 130 sidewalls.
- Method 500 begins at block 502 and continues with forming fin structures within substrate 102 (block 504 ).
- Each fin structure includes a fin 120 .
- the fins 120 may be formed by similar fabrication techniques depicted in FIG. 1 - FIG. 6 and associated text. However, the fabrication of structure 200 may not utilize fin cap layer 104 . As such, the fins 120 may not include fin caps 104 ′ thereupon.
- Method 500 may continue with forming well-plugs 202 at the bottom of fin wells 121 upon the bottom surface of fin wells 121 and upon a lower portion of the sidewalls of fins 120 (block 506 ).
- a dielectric layer such as an oxide material layer may be deposited upon the fins 120 and within the fin wells 121 and a subtractive removal technique may remove excess dielectric material from upon the fins 120 and from the upper portion of the fin wells 121 leaving dielectric material within the lower portion of fin wells 121 .
- Method 500 may continue with forming 2D layer 130 upon the fin 120 sidewalls and fin 120 upper surface (block 508 ).
- a graphene layer is formed upon the fin 120 sidewalls and the fin 120 upper surface within the source region 150 , drain region 160 , and within the channel region 155 .
- the 2D layer 130 is generally not formed upon the upper surface of well-plugs 202 and as such, the upper surface of well plugs are substantially (e.g., the majority, or the like) exposed.
- Method 500 may continue with forming a channel mask 140 upon the 2D layer 130 and upon well-plugs 202 within channel region 155 (block 510 ).
- Forming the channel mask 140 may include forming a blanket layer upon the 2D layer 130 and well-plugs 202 and removing portions of the blanket layer in source region 150 and in drain region 160 , such that a remaining portion of the blanket layer in channel region 155 forms channel mask 140 .
- Method 500 may continue with forming a source contact 151 and forming a drain contact 161 upon the 2D layer 130 and upon well-plugs 202 adjacent to the channel mask 140 within source region 150 and within drain region 160 , respectively (block 512 ).
- the source contact 151 and drain contact 161 may be formed by depositing source/drain material 170 upon the channel mask 140 and upon the 2D material 130 and well-plugs 202 in source region 150 and drain region 160 .
- the source/drain material 170 in source region 150 and in drain region 160 may generally form source contact 151 and forms drain contact 161 , respectively.
- Method 500 may continue with removing the channel mask 140 to expose 2D material layer 130 and well-plugs 202 within channel region 155 (block 514 ).
- the removal of channel mask 140 may also remove with it excess source/drain layer 170 material there above.
- Method 500 may continue with forming source contact mask 175 and drain contact mask 175 thereby forming channel well 171 having exposed 2D layer 130 and well-plugs 202 within channel region 155 (block 516 ).
- the contact mask 175 may be formed by depositing a mask material that may be removed without damage to the underlying 2D layer 130 and without damage to the underlying well-plugs 202 within channel region 155 and depositing the mask material upon the source contact 151 and drain contact 161 . Subsequently, the mask material may be removed within the channel region 155 thereby forming channel well 171 and the mask material covering the source contact 151 and drain contact 161 is retained.
- the geometry of channel well 171 may be chosen to result in the desired geometry of gate 190 that may be formed therewithin.
- Method 500 may continue with forming gate dielectric layer 180 upon the source contact mask 175 and the drain contact mask 175 and upon the exposed 2D layer 130 and well-plugs 202 within channel well 171 (block 518 ).
- a retained gate dielectric 180 ′ may be formed by removing portions of the gate dielectric layer 180 material that are not upon the bottom surfaces of channel well 171 within channel region 155 .
- Method 500 may continue with forming gate 190 upon the retained gate dielectric 180 ′ (block 522 ). Method 500 ends at block 524 .
- FIG. 19 illustrates fabrication method 600 of semiconductor structure 300 that includes a fin 120 having 2D material 130 sidewalls.
- Method 600 begins at block 602 and continues with forming fin structures within substrate 102 (block 604 ).
- Each fin structure includes a fin 120 and a fin cap 104 ′ upon the top surface of the fin 120 .
- the fins 120 may be formed by similar fabrication techniques depicted in FIG. 1 - FIG. 6 and associated text.
- Method 600 may continue with forming well-plugs 202 at the bottom of fin wells 121 upon the bottom surface of fin wells 121 and upon a lower portion of the sidewalls of fins 120 (block 606 ).
- a dielectric layer such as an oxide material layer may be deposited upon the fins 120 and within the fin wells 121 and a subtractive removal technique may remove excess dielectric material from upon the fins 120 and from the upper portion of the fin wells 121 , leaving dielectric material within the lower portion of fin wells 121 .
- Method 600 may continue with forming 2D layer 130 upon the fin 120 sidewalls (block 608 ).
- a graphene layer is formed upon the fin 120 sidewalls within the source region 150 , drain region 160 , and within the channel region 155 .
- the 2D layer 130 is generally not formed upon the upper surface of well-plugs 202 nor is formed upon the fin caps 104 ′, and as such, the upper surface of well plugs and the fin caps 104 ′ are substantially (e.g., the majority, or the like) exposed and the 2D layer 130 is deposited only upon the sidewalls of fins 120 .
- Method 600 may continue with forming a channel mask 140 upon the 2D layer 130 , upon the fin caps 104 ′, and upon well-plugs 202 within channel region 155 (block 610 ).
- Forming the channel mask 140 may include forming a blanket layer upon the 2D layer 130 , upon the fin caps 104 ′, and upon the well-plugs 202 and removing portions of the blanket layer in source region 150 and in drain region 160 , such that a remaining portion of the blanket layer in channel region 155 forms channel mask 140 .
- Method 600 may continue with forming a source contact 151 and forming a drain contact 161 upon the 2D layer 130 , upon fin caps 104 ′, and upon well-plugs 202 adjacent to the channel mask 140 within source region 150 and within drain region 160 , respectively (block 612 ).
- the source contact 151 and drain contact 161 may be formed by depositing source/drain material 170 upon the channel mask 140 , upon the fin caps 104 ′, upon the 2D material 130 , and upon well-plugs 202 in source region 150 and drain region 160 .
- the source/drain material 170 in source region 150 and in drain region 160 may generally form source contact 151 and forms drain contact 161 , respectively.
- Method 600 may continue with removing the channel mask 140 to expose 2D material layer 130 , fin caps 104 ′, and well-plugs 202 within channel region 155 (block 614 ).
- the removal of channel mask 140 may also remove with it excess source/drain layer 170 material there above.
- Method 600 may continue with forming source contact mask 175 and drain contact mask 175 thereby forming channel well 171 having exposed 2D layer 130 , fin caps 104 ′, and well-plugs 202 within channel region 155 (block 616 ).
- the contact mask 175 may be formed by depositing a mask material that may be removed without damage to the underlying 2D layer 130 , without damage to the underlying well-plugs 202 , and without damage to the underlying fin caps 104 ′ within channel region 155 and depositing the mask material upon the source contact 151 and drain contact 161 . Subsequently, the mask material may be removed within the channel region 155 , thereby forming channel well 171 , while the mask material covering the source contact 151 and drain contact 161 is retained.
- the geometry of channel well 171 may be chosen to result in the desired geometry of gate 190 that may be formed therewithin.
- Method 600 may continue with forming gate dielectric layer 180 upon the source contact mask 175 and the drain contact mask 175 and upon the exposed 2D layer 130 , upon the exposed fin caps 104 ′, and upon the exposed well-plugs 202 within channel well 171 (block 618 ).
- a retained gate dielectric 180 ′ may be formed by removing portions of the gate dielectric layer 180 material that is not upon the bottom surfaces of channel well 171 within channel region 155 and removing the source mask 175 and drain mask 175 .
- Method 600 may continue with forming gate 190 upon the retained gate dielectric 180 ′ (block 622 ). Method 600 ends at block 624 .
- FIG. 20 - FIG. 23 illustrates fabrication stages of semiconductor structure (e.g. structure 200 , structure 300 , or the like) that includes a fin having 2D material sidewalls, according to exemplary embodiments of the present invention. More specifically, FIG. 20 - FIG. 23 illustrates fabrication stages of a semiconductor structure 300 that includes well-plugs 202 . For clarity, similar fabrication stages to those depicted in FIG. 20 - FIG. 23 are contemplated to form semiconductor structure 200 and would be depicted without fin caps 104 ′.
- semiconductor structure e.g. structure 200 , structure 300 , or the like
- a high aspect ratio plasma (HARP) oxide layer 304 is formed upon the substrate 102 , upon the sidewalls of the fins 120 , and upon the fin caps 104 ′ (i.e. structure 300 ) or is formed upon the substrate 102 and upon the fins 120 (i.e. structure 200 ).
- the HARP layer 304 may be formed to a thickness greater than the height of fins 120 and/or greater than the height of the fin caps 104 ′.
- the HARP layer 304 may be formed by depositing silicon oxide and may be subsequently annealed.
- FIG. 21 depicting the semiconductor structure at an intermediate fabrication stage.
- the structure undergoes a CMP process to remove undesired HARP layer 304 material above the plane of the upper surface of fins 120 (i.e. structure 200 ) or above the plane of the upper surface of fins caps (structure 300 ).
- portions of the HARP layer 304 within fin trenches 121 are removed.
- the portions of the HARP layer 304 may be removed by subtractive removal techniques.
- an etchant chosen to remove the material of HARP layer 304 and to not remove the material of substrate 102 and fins 120 and to not remove the material of fin caps 104 ′ (if present) may be used to, for instance, remove portions of HARP layer 304 that are within fin wells 121 .
- the exposure to the etchant may be timed or otherwise applied selectively so as to retain material of HARP layer 304 to form well-plugs 202 at the bottom of the fin wells 121 .
- 2D layer 130 is formed only upon the sidewalls of fins 120 (i.e. structure 300 ) by forming a 2D material upon the exposed sidewall surfaces of fins 120 .
- 2D layer 130 may alternatively be formed upon the sidewalls and upper surface of fins 120 (i.e. structure 200 ) by forming a 2D material upon the exposed sidewall and upper surfaces of fins 120 .
- the particular deposition techniques may be selected to achieve desired thickness of 2D layer 130 in order to control finFET band gap properties.
- Ar gas is used to achieve slower sublimation of Si from the SiC surface at high temperatures (e.g., 750° C., or the like) to achieve a few monolayers of Graphene in a controlled manner (each Graphene monolayer is about 0.35 nm thick).
- high temperatures e.g., 750° C., or the like
- a few monolayers of Graphene in a controlled manner each Graphene monolayer is about 0.35 nm thick.
- the methods as discussed above may be used in the fabrication of integrated circuit chips.
- the resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare chip, or in a packaged form.
- the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections).
- the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product.
- the end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products (such as, but not limited to, an information processing system) having a display, a keyboard, or other input device, and a central processor.
- “forming,” “depositing,” “deposited,” etc. may include any now known or later developed techniques appropriate for the material to be deposited, including, but not limited to: CVD, LPCVD, PECVD, semi-atmosphere CVD (SACVD), high density plasma CVD (HDPCVD), rapid thermal CVD (RTCVD), ultra-high vacuum CVD (UHVCVD), limited reaction processing CVD (LRPCVD), metalorganic CVD (MOCVD), sputtering deposition, ion beam deposition, electron beam deposition, laser assisted deposition, thermal oxidation, thermal nitridation, spin-on methods, physical vapor deposition (PVD), atomic level deposition (ALD), chemical oxidation, molecular beam epitaxy (MBE), plating or evaporation.
- CVD chemical vapor deposition
- PECVD semi-atmosphere CVD
- SACVD high density plasma CVD
- HDPCVD high density plasma CVD
- RTCVD rapid thermal CV
- references herein to terms such as “vertical”, “horizontal”, etc. are made by way of example, and not by way of limitation, to establish a frame of reference.
- the term “horizontal” as used herein is defined as a plane parallel to the conventional plane or surface of the substrate 102 , regardless of the actual spatial orientation of the semiconductor substrate 102 .
- the term “vertical” refers to a direction perpendicular to the horizontal, as just defined. Terms, such as “on”, “above”, “below”, “side” (as in “sidewall”), “higher”, “lower”, “over”, “beneath” and “under”, are defined with respect to the horizontal plane. It is understood that various other frames of reference may be employed for describing the present invention without departing from the spirit and scope of the present invention.
Abstract
Description
- The present invention generally relates to integrated circuits, and more particularly to fin field effect transistors (finFETs) that include fins having a two dimension (2D) material sidewall.
- A complementary metal oxide semiconductor (CMOS) device uses symmetrically-oriented pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) arranged on silicon or silicon-on-insulator (SOI) substrates. Source and drain regions associated with the MOSFET are connected by a channel. A gate disposed over the channel controls the flow of current between the source and drain regions. The source region, channel, and drain region may be defined by a fin that provides more than one surface through which the gate controls the flow of current, thereby making the MOSFET a “finFET” device.
- A 2D material is a crystalline material consisting of a single layer of atoms. Graphene, a particular type of 2D material, is an allotrope of carbon in the form of a two-dimensional, atomic-scale, hexagonal lattice in which one atom forms each vertex.
- According to one embodiment of the present invention, a semiconductor structure fabrication method is claimed. The method includes forming neighboring fins within a semiconductor substrate separated by a fin well and forming a fin cap upon each fin. The method further includes forming a 2D material upon sidewalls fins and upon a bottom surface of the fin well within a source region, within a drain region, and within a channel region. The method further includes forming a channel mask upon the 2D material and upon the fin caps within the channel region and forming a source contact adjacent to the channel mask within the source region and forming a drain contact adjacent to the channel mask within the drain region. The method further includes exposing the 2D material and the fin caps within the channel region by removing the channel mask, forming a gate dielectric upon the exposed 2D material and upon the exposed fin caps within the channel region, and forming a gate upon the gate dielectric.
- In another embodiment of the present invention, a semiconductor structure is claimed. The semiconductor structure includes a substrate, neighboring fins within the substrate separated by a fin well, and a fin cap upon each fin. The semiconductor structure further includes a 2D material upon sidewalls of the fins and upon a bottom surface of the fin well within a source region, within a drain region, and within a channel region. The semiconductor structure further includes a source contact within the source region and a drain contact within the drain region, a gate dielectric upon the 2D material and upon the fin caps within the channel region, and a gate upon the gate dielectric.
- In another embodiment of the present invention, a finFET is claimed. The finFET includes a substrate, neighboring fins within the substrate separated by a fin well, and a fin cap upon each fin. The finFET further includes a 2D material upon sidewalls of the fins and upon a bottom surface of the fin well within a source region, within a drain region, and within a channel region. The finFET further includes a source contact within the source region and a drain contact within the drain region, a gate dielectric upon the 2D material and upon the fin caps within the channel region, and a gate upon the gate dielectric.
- The following detailed description, given by way of example and not intended to limit the invention solely thereto, will best be appreciated in conjunction with the accompanying drawings, in which:
-
FIG. 1 illustrates a semiconductor structure that includes a fin having 2D material sidewalls, according to one or more exemplary embodiments of the present invention. -
FIG. 2A -FIG. 12 illustrates fabrication stages of a semiconductor structure that includes a fin having 2D material sidewalls, according to exemplary embodiments of the present invention. -
FIG. 13A andFIG. 13B illustrate fabrication stages of a semiconductor structure that includes a fin having 2D material sidewalls, according to exemplary embodiments of the present invention. -
FIG. 14 -FIG. 16 illustrate semiconductor structure that includes a fin having 2D material sidewalls, according to one or more exemplary embodiments of the present invention. -
FIG. 17 -FIG. 19 illustrate fabrication methods of a semiconductor structure that includes a fin having 2D material sidewalls, according to exemplary embodiments of the present invention. -
FIG. 20 -FIG. 23 illustrates fabrication stages of a semiconductor structure that includes a fin having 2D material sidewalls, according to exemplary embodiments of the present invention. - The drawings are not necessarily to scale. The drawings are merely schematic representations, not intended to portray specific parameters of the invention. The drawings are intended to depict only typical embodiments of the invention. In the drawings, like numbering represents like elements.
- Detailed embodiments of the claimed structures and methods are disclosed herein; however, it can be understood that the disclosed embodiments are merely illustrative of the claimed structures and methods that may be embodied in various forms. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of this invention to those skilled in the art. In the description, details of well-known features and techniques may be omitted to avoid unnecessarily obscuring the presented embodiments.
- Embodiments of the invention relate to the fabrication of finFET devices and more particularly, to a device with a fin that has a 2D material sidewall. Generally, as the width of the 2D material sidewall increases, the band gap decreases. This is the result of the physical constriction of conduction channels in a semiconductor (for example, in nanowires, 2D Electron-Gas, etc.). Additionally, the thickness of the 2D material sidewall may establish the existence of a band gap. Monolayer Graphene does not have a band gap unless it is mechanically strained, submitted to a strong perpendicular electric field, chemically doped, or is constricted as in this invention. Bilayer Graphene, on the other hand, does have a band gap in its pristine state even without a constriction. Band gaps of up to 300 meV may be obtained in monolayer Graphene using constrictions alone.
- It should be noted that some of the drawings represent views of a semiconductor structure, such as a wafer, IC chip, etc. The particular view depicted is chosen to depict such features of the embodiments. Some of the drawings, depict multiple views. In such drawings, the particular view is denoted, e.g., cross section view along the bisector of the gate, top view, and side cross section view perpendicular to the gate between fins.
- Referring now to
FIG. 1 , anexemplary semiconductor structure 100, such as a wafer, IC chip, etc., includes a silicon carbide (SiC)substrate 102,fins 120 formed from theSiC substrate 102, afin cap 104′ upon the top of eachfin 120, a2D layer 130 upon the sidewalls offins 120 and upon bottom of the fin well uponsubstrate 102 betweenfins 120, asource contact 151 that is formed upon the2D layer 130 and upon thefin caps 104′ withinsource region 150, adrain contact 161 that is formed upon the2D layer 130 and upon thefin caps 104′ withindrain region 160, a gate dielectric 180′ upon the2D layer 130 and upon thefin caps 104′ withinchannel region 155, and agate 190 upon the gate dielectric 180′. - The width of
2D layer 130 and the height of thefin 120 may be adjusted to achieve desired band gap properties. In an embodiment, the width of the 2D layer is defined by the fin spacing plus two times the fin height up to thefin cap 104′. - Referring now to
FIG. 2A , depictingsemiconductor structure 100 at an exemplary initial fabrication stage. At this fabrication stage, afin cap layer 104 is formed uponSiC substrate 102, amandrel base layer 106 is formed uponfin cap layer 104, amandrel layer 108 is formed upon themandrel base layer 106, and a lithography layer(s) 110 is formed upon themandrel layer 108. -
SiC substrate 102 is a Silicon Carbide substrate and may be about, but is not limited to, several hundred microns thick. For example, thesubstrate 102 has a thickness ranging from about 700 nm to about 700 um. In one embodiment, thesubstrate 102 may have a thickness ranging from about 400 um to about 700 um. -
Fin cap layer 104 is formed from a material which a particular 2D material is not formed upon during a subsequent carbide formation fabrication stage further described below. In a particular embodiment,fin cap layer 104 may be formed by depositing Silicon Nitride upon thesubstrate 102. Thefin cap layer 104 has a thickness ranging from about 5 nm to about 200 nm. In one embodiment, thefin cap layer 104 may have a thickness ranging from about 5 nm to about 50 nm. -
Mandrel base layer 106 is formed from a material which a mandrel may be fabricated thereupon during a subsequent fabrication stage further described below. In a particular embodiment,mandrel base layer 106 is formed from undoped silicon glass (USG).Mandrel base layer 106 has a thickness ranging from about 5 nm to about 200 nm. In one embodiment, themandrel base layer 106 may have a thickness ranging from about 20 nm to about 200 nm. -
Mandrel layer 108 is formed from a material that which may be selectively removed so that remaining portions thereof form mandrels. In a particular embodiment,mandrel layer 108 is formed from amorphous Silicon Carbide.Mandrel layer 108 has a thickness ranging from about 50 nm to about 200 nm. In one embodiment, themandrel layer 108 may have a thickness ranging from about 20 nm to about 200 nm. - Lithography layer(s) 110 are formed from one or more material layers used to selectively remove portions of
mandrel layer 108 and to retain portions ofmandrel layer 108. In a particular embodiment, lithography layers 110 include an optical dense layer, a SiC layer, an anti-reflective layer, and a photoresist layer. Such lithograph layer(s) 110 may be patterned, as is known in the art, in order to expose portions of theunderlying mandrel layer 108 so that some portions ofmandrel layer 108 may be subsequently removed and other portions ofmandrel layer 108 may be retained. - Referring now to
FIG. 2B , depictingsemiconductor structure 100 at an intermediate fabrication stage. At this fabrication stage,mandrels 108′ are formed frommandrel layer 108 and aspacer layer 112 is formed upon themandrel base layer 106 and themandrels 108′. The removal of portions ofmandrel layer 108 and retention ofmandrels 108′ frommandrel layer 108 may be achieved by known subtractive etching techniques. For example, an etchant chosen to remove the material ofmandrel layer 108 and to stop at themandrel base layer 106 may be used to, for instance, remove portions ofmandrel layer 108 that are exposed by the developing/patterning of the lithograph layer(s) 110. For clarity, unless otherwise required,mandrels 108′ may be formed by other fabrication techniques without deviating from those embodiments herein claimed. Furthermore, subsequent to their formation,mandrels 108′ may undergo further fabrication processing stages in order to achieve appropriate functions desired ofmandrels 108. -
Spacer layer 112 is formed from one or more materials that are selective to an etchant that removesmandrels 108′ and that mask an etchant from removing material of themandrel base layer 106 andfin cap layer 104 during a subsequent fabrication stage further described below. In a particular embodiment,spacer layer 112 is formed by depositing Silicon Oxide upon themandrel base layer 106 and uponmandrels 108′.Spacer layer 112 has a thickness ranging from about 10 nm to about 100 nm. In one embodiment, thespacer layer 112 may have a thickness ranging from about 50 nm to about 100 nm. - Referring now to
FIG. 3 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage,spacers 112′ are formed fromspacer layer 112.Spacers 112′ are generally formed by retaining thespacer layer 112 material on the sidewalls ofmandrels 108′ and by removing the undesired other portions ofspacer layer 112 material not upon the sidewalls ofmandrels 108′. Additional selective removal techniques to formspacers 112′ upon the sidewalls ofmandrels 108′ are generally known in the art. - Referring now to
FIG. 4 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage,spacers 112′ are retained uponmandrel base layer 106 andmandrels 108′ are removed. The removal ofmandrels 108′ may be achieved by subtractive etching techniques where an etchant selectively removes only the materials ofmandrels 108′ and does not remove the material ofspacers 112′ ormandrel base layer 106. - The removal of
mandrels 108′ and the retention ofspacers 112′ generally form an array ofspacers 112′ across the surface ofmandrel base layer 106, as is exemplary shown in the lower view ofFIG. 4 . As such, portions ofmandrel base layer 106 are exposed (i.e. there is nospacer 112′ there above) and other portions ofmandrel base layer 106 are covered (i.e. there is aspacer 112′ there above). - Referring now to
FIG. 5 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage,fin mask 105 is formed frommandrel base layer 106 andfin cap layer 104.Fin mask 105 includes a retainedportion 106′ ofmandrel base layer 106 that was previously covered (i.e. there was aspacer 112′ there above) and includes a retainedportion 104′ offin cap layer 104 below theportion 106′.Fin mask 105 may be formed by removing thespacers 112′ and the exposed portions ofmandrel base layer 106. Additional selective removal techniques to formfin mask 105 are generally known in the art. -
Fin mask 105 generally masks portions ofsubstrate 102.Fin mask 105 does not cover exposed portions of substrate 102 (i.e. there is nofin mask 105 there above) andfin mask 105 covers other portions of substrate 102 (i.e. there is afin mask 105 there above). - Referring now to
FIG. 6 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage, fin structures are formed. Each fin structure includes afin 120 formed fromsubstrate 102 and includes a retainedportion 104′, referred to as afin cap 104′, upon thefin 120. The fin structures may be formed by removingfin mask 105 and partially removing the exposed portions ofsubstrate 102. Additional selective removal techniques to form fin structures are generally known in the art. - The partial removal of exposed portions of
substrate 102 results in a fin well 121 existing between neighboringfins 120. Each fin well 121 includes a fin sidewall of aleft fin 120, a fin sidewall from aright fin 120 neighboring theleft fin 120, and a bottom well surface that connects the aforementioned sidewalls. - Referring now to
FIG. 7 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage,2D layer 130 is formed within thefin wells 121 by forming a 2D material upon the exposed surfaces ofsubstrate 102. In embodiments, the particular deposition techniques may be selected to achieve desired thickness of2D layer 130 in order to control finFET band gap properties. For example, Ar gas is used to achieve slower sublimation of Si from the SiC surface at high temperatures (e.g., 750° C., or the like) to achieve a few monolayers of Graphene in a controlled manner (each Graphene monolayer is about 0.35 nm thick). - Generally, a 2D material is a crystalline material consisting of a single layer of atoms. In some embodiments, a thickness of the
2D layer 130 has a thickness of about 0.6 nm to about 3 nm, such as about 0.6 nm.2D layer 130 has a thickness ranging from about 0.2 nm to about 5 nm. In one embodiment, the2D layer 130 may have a thickness ranging from about 0.35 nm to about 3.5 nm. -
2D layer 130 will act as a layer in which thesource region 150drain region 160 andchannel region 155 are formed. Suitable materials include, for example, graphene, TMDs, BN, or the like. Generally, a thin layer such as one or a few monolayers of a 2D material is deposited. Examples of suitable TMDs include MoO3 MoS2, WS2, WSe2, MoSe2, MoTe2, and the like. - In some embodiments one or a few monolayers of graphene, a TMD, BN or the like is formed using, for example, chemical vapor deposition (CVD), atmospheric pressure CVD (APCVD), low-pressure CVD (LPCVD) at a sub-atmospheric pressure, plasma enhanced CVD (PECVD), atomic layer CVD (ALCVD), or combinations thereof. For example, a graphene layer may be formed using CH4+H2+Ar.
- Referring now to
FIG. 8 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage,blanket layer 140 is formed upon the2D layer 130 and upon the fin caps 104′.Blanket layer 140 is formed from a material that may be etched fromstructure 100 without damage to theunderlying 2D layer 130 and without damage to the fin caps 104′. For example, theblanket layer 140 may be a negative tone resist such as KemLab 1600, a positive tone resist with a lift-off resist underlayer such as LOR or PMGI, or an image reversal resist such AZ 5215E photoresist, or the like. In an embodiment, theblanket layer 140 may be formed to a thickness greater than the height of the fin structures such that theblanket layer 140 covers the fin caps 104′. - Referring now to
FIG. 9 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage, portions ofblanket layer 140 withinsource region 150 and withindrain region 160 are removed. The removal of portions ofblanket layer 140 may be achieved by lithography of the 140 photoresist or ebeam resist and subsequent development. The developer removes the material ofblanket layer 140 from thesource region 150 and fromdrain region 160 while retaining the2D layer 130 and fin caps 104′ within thesource region 150 and within thedrain region 160, while also retaining theblanket layer 140 material inchannel region 155. Theblanket layer 140 that remains inchannel region 155 may be herein referred to aschannel mask 140. Additional lithographic techniques to achieve selective removal of portions ofblanket layer 140 are generally known in the art. - Referring now to
FIG. 10 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage, source/drain layer 170 is formed upon top surface of the retainedblanket layer 140 inchannel region 155 and upon the2D layer 130 and upon the fin caps 104′ withinsource region 150 and withindrain region 160. Source/drain layer 170 is formed from a material that may be desired to form a source contact and a drain contact. For example, the source/drain layer 170 may be Pd, Au (with Cr adhesion layer), Pt, or the like. Subsequently, a liftoff process is realized in which a solvent such as Microposit Remover 1165 or acetone removes the remaining retainedblanket layer 140 and leaves behind source/drain layer 170 only in the regions that it does not cover 140. In other words, the liftoff process removes the retainedblanket layer 140 and portion of the source/drain layer 170 which is thereupon. - Referring now to
FIG. 11 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage, the remainingblanket layer 140 withinchannel region 155 is removed by the liftoff process,source contact 151 is formed, anddrain contact 161 is formed. The removal ofblanket layer 140 may be achieved by a liftoff technique where a solvent such as Microposit Remover 1165 or acetone removes the material ofblanket layer 140 from thechannel region 155, thus also taking away the above source/drain layer 170 material thereupon, while retaining the source/drain layer 170 material withinsource region 150 and withindrain region 160. Liftoff techniques to achieve selective removal of theblanket layer 140 withinchannel region 150, and the source/drain layer 170 there above, are generally known in the art. - Generally, the source/
drain layer 170 material that remains withinsource region 150 and withindrain region 160, subsequent to the removal of source/drain layer 170 material fromchannel region 155, forms sourcecontact 151 anddrain contact 161, respectively. Further fabrication steps may be utilized to form the desired geometry ofsource contact 151 anddrain contact 161. - Referring now to
FIG. 12 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage,mask layer 175 is formed upon the2D layer 130 in channel region 155 (not shown), uponsource contact 151, and upondrain contact 161.Mask layer 175 is formed from a material that may be etched fromstructure 100 without damage to theunderlying 2D layer 130, without damage to thesource contact 151, and without damage to draincontact 161. For example, themask layer 175 may be spun on negative tone resist such as KemLab 1600, a positive tone resist with a lift-off resist underlayer such as LOR or PMGI, or an image reversal resist such AZ 5215E, or the like. - The portion of
mask layer 175 upon2D layer 130 withinchannel region 155 is subsequently removed forming achannel well 171. The removal of portions ofmask layer 175 may be achieved by lithographic exposure of themask layer 175 and subsequent development techniques where a developer such as TMAH removes the material ofmask layer 175 from thechannel region 155 while retaining the2D layer 130 within thechannel region 155, while also retaining themask layer 175 material uponsource contact 151 and upondrain contact 161. The retainedmask layer 175 material uponsource contact 151 and upondrain contact 161 is herein referred to as source/drain mask 175. Additional appropriate developers for any given resist used to achieve selective removal of portions ofmask layer 175 fromchannel region 155 to form the channel well 171 are generally known in the art. - Referring now to
FIG. 13A and/or toFIG. 13B , depictingsemiconductor structure 100 at intermediate fabrication stages. At the present fabrication stages,gate dielectric layer 180 is formed upon the2D layer 130 and upon fin caps 104′ inchannel region 155 and upon the source/drain mask 175, andgate layer 190′ is formed upongate dielectric layer 180. - As shown in
FIG. 13A ,gate dielectric layer 180 is formed upon the2D layer 130 and upon fin caps 104′ inchannel region 155 and upon the source/drain mask 175 insource region 150 and indrain region 160.Gate dielectric layer 180 may be formed from a known gate dielectric material, such as Aluminum Oxide, or the like. For example, thegate dielectric layer 180 may be deposited upon the2D layer 130 and fin caps 104′ inchannel region 155 and upon the source/drain mask 175 utilizing Atomic Level Deposition (ALD) techniques. Thegate dielectric layer 180 may be formed from a high k dielectric material having a greater dielectric constant as compared to silicon dioxide, using any of several known methods, for example, thermal or plasma oxidation or nitridation methods, chemical vapor deposition methods, and physical vapor deposition methods. - As shown in
FIG. 13B ,gate layer 190′ may be formed upon thegate dielectric layer 180.Gate layer 190′ is formed by any suitable deposition technique, including but not limited to atomic layer deposition, chemical vapor deposition, physical vapor deposition, sputtering, plating, etc. For example,gate layer 190′ may be formed by an evaporated metal such as Al or Pd. Generally, the portion ofgate layer 190′ within the channel well 171 that is retained is herein referred to asgate 190. The portions of thegate layer 190′ not in the channel well 171 are removed. The portions of thegate layer 190′ not in the channel well 171 may be removed by known removal techniques such as CMP techniques, lithographic techniques, or the like. - The portions of
gate dielectric layer 180 upon the source/drain mask 175 are also removed while the portion ofgate dielectric layer 180 upon2D layer 130 and fin caps 104′ within the channel well 171 are retained underneath thegate 190. The removal of portions ofdielectric layer 180 may be achieved by lithographic exposure of themask layer 180 and subsequent development techniques where a developer such as TMAH removes the material ofdielectric layer 180 from the source/drain mask 175 while retaining thedielectric layer 180 upon the2D layer 130 and upon the fin caps 104′ within thechannel well 171. Additional appropriate developers for any given resist used to achieve selective removal of portions ofgate dielectric layer 180 to form thegate dielectric 180 are generally known in the art. In such technique, the source/drain mask is subsequently removed. - The removal of portions of
dielectric layer 180 may be alternatively achieved by subtractive etching techniques where an etchant removes the material of source/drain mask 175 while resultantly also removing the portions ofdielectric layer 180 upon the source/drain mask 175. - Generally, the portion of
dielectric layer 180 that remains within the channel well 171 is herein referred to as gate dielectric 180′. - Referring now to
FIG. 14 , depictingsemiconductor structure 100 at an intermediate fabrication stage. At the present fabrication stage,gate 190 has been formed upon thegate dielectric 180′ by retaininggate 190 from thegate layer 190′ and by retaining gate dielectric 180′ fromdielectric layer 180 and removing the respective undesired portions ofgate layer 190′ anddielectric layer 180. - The presented fabrication flow, also depicted as
fabrication method 400 inFIG. 17 , results instructure 100 including a layer of2D material 130 on the sidewalls offins 120 and upon the bottom surface offin wells 121 within thesource region 150, withindrain region 160, and within thechannel region 155 underneathgate 190. In such described flow,structure 100 includes fin caps 104′ upon eachfin 120 so that2D material 130 is not formed above the top surface of eachfin 120. - Referring now to
FIG. 15 , depicting asemiconductor structure 200. In the present embodiment,structure 200 includes2D layer 130 upon the sidewalls and upper surface offins 120 within thesource region 150, withindrain region 160, and within thechannel region 155 underneathgate 190.Structure 200 may be formed byfabrication method 500, depicted inFIG. 18 . In such described flow,structure 200 includes well-plugs 202 at the bottom offin wells 121 so that2D material 130 is not upon thesubstrate 102 surface at the bottom of thefin wells 121. - Referring now to
FIG. 16 , depicting asemiconductor structure 300. In the present embodiment,structure 300 includes2D layer 130 only upon the sidewalls offins 120 within thesource region 150, withindrain region 160, and within thechannel region 155 underneathgate 190.Structure 300 may be formed byfabrication method 600, depicted inFIG. 19 . In such described flow,structure 300 includes well-plugs 202 at the bottom offin wells 121 so that2D material 130 is not upon thesubstrate 102 surface at the bottom of thefin wells 121.Structure 300 also includes fin caps 104′ upon the top surface of eachfin 120 so that2D material 130 is not formed above the top surface of eachfin 120. As such,2D material 130 is only formed upon the sidewalls of eachfin 120. -
FIG. 17 illustratesfabrication method 400 ofsemiconductor structure 100 that includes afin 120 having2D material 130 sidewalls.Method 400 begins atblock 402 and continues with forming fin structures within substrate 102 (block 404). Each fin structure includes afin 120 and afin cap 104′ upon the top surface of thefin 120. Thefins 120 may be formed by fabrication techniques depicted inFIG. 1 -FIG. 6 and associated text. -
Method 400 may continue with forming2D layer 130 upon thefin 120 sidewalls and upon the bottom surface of the fin well 121 (block 406). For example, a graphene layer is formed upon thefin 120 sidewalls and the bottom surface offin wells 121. -
Method 400 may continue with forming achannel mask 140 upon the2D layer 130 and upon fin caps 104′ within channel region 155 (block 408). Forming thechannel mask 140 may include forming a blanket layer and removing portions of the blanket layer insource region 150 and indrain region 160, such that a remaining portion of the blanket layer inchannel region 155form channel mask 140. -
Method 400 may continue with forming asource contact 151 and forming adrain contact 161 upon the2D layer 130 and upon fin caps 104′ adjacent to thechannel mask 140 withinsource region 150 and withindrain region 160, respectively (block 410). Thesource contact 151 anddrain contact 161 may be formed by depositing source/drain material 170 upon thechannel mask 140 and upon the2D material 130 and fin caps 104′ insource region 150 and drainregion 160. The source/drain material 170 insource region 150 and indrain region 160 may generally formsource contact 151 and forms draincontact 161, respectively. -
Method 400 may continue with removing thechannel mask 140 to expose2D material layer 130 and fin caps 104′ within channel region 155 (block 412). The removal ofchannel mask 140 may also remove with it excess source/drain layer 170 there above. -
Method 400 may continue with formingsource contact mask 175 and draincontact mask 175 thereby forming channel well 171 having exposed2D layer 130 and fin caps 104′ within channel region 155 (block 414). Thecontact mask 175 may be formed by depositing a mask material that may be removed without damage to theunderlying 2D layer 130 and without damage to the underlying fin caps 104′ withinchannel region 155 and upon thesource contact 151 anddrain contact 161. Subsequently, the mask material may be removed within thechannel region 155 thereby forming channel well 171 and the mask material covering thesource contact 151 anddrain contact 161 is retained. In embodiments, the geometry of channel well 171 may be chosen to result in the desired geometry ofgate 190 that may be formed therewithin. -
Method 400 may continue with forminggate dielectric layer 180 upon the source contact mask and the drain contact mask and upon the exposed2D layer 130 and fin caps 104′ within channel well 171 (block 416). A retained gate dielectric 180′ may be formed by removing some portions ofgate dielectric layer 180 material that are not upon the bottom surfaces of channel well 171 withinchannel region 155. -
Method 400 may continue with forminggate 190 upon the retained gate dielectric 180′ (block 420).Method 400 ends atblock 422. -
FIG. 18 illustratesfabrication method 500 ofsemiconductor structure 200 that includes afin 120 having2D material 130 sidewalls.Method 500 begins atblock 502 and continues with forming fin structures within substrate 102 (block 504). Each fin structure includes afin 120. Thefins 120 may be formed by similar fabrication techniques depicted inFIG. 1 -FIG. 6 and associated text. However, the fabrication ofstructure 200 may not utilizefin cap layer 104. As such, thefins 120 may not include fin caps 104′ thereupon. -
Method 500 may continue with forming well-plugs 202 at the bottom offin wells 121 upon the bottom surface offin wells 121 and upon a lower portion of the sidewalls of fins 120 (block 506). For example, a dielectric layer such as an oxide material layer may be deposited upon thefins 120 and within thefin wells 121 and a subtractive removal technique may remove excess dielectric material from upon thefins 120 and from the upper portion of thefin wells 121 leaving dielectric material within the lower portion offin wells 121. -
Method 500 may continue with forming2D layer 130 upon thefin 120 sidewalls andfin 120 upper surface (block 508). For example, a graphene layer is formed upon thefin 120 sidewalls and thefin 120 upper surface within thesource region 150,drain region 160, and within thechannel region 155. The2D layer 130 is generally not formed upon the upper surface of well-plugs 202 and as such, the upper surface of well plugs are substantially (e.g., the majority, or the like) exposed. -
Method 500 may continue with forming achannel mask 140 upon the2D layer 130 and upon well-plugs 202 within channel region 155 (block 510). Forming thechannel mask 140 may include forming a blanket layer upon the2D layer 130 and well-plugs 202 and removing portions of the blanket layer insource region 150 and indrain region 160, such that a remaining portion of the blanket layer inchannel region 155forms channel mask 140. -
Method 500 may continue with forming asource contact 151 and forming adrain contact 161 upon the2D layer 130 and upon well-plugs 202 adjacent to thechannel mask 140 withinsource region 150 and withindrain region 160, respectively (block 512). Thesource contact 151 anddrain contact 161 may be formed by depositing source/drain material 170 upon thechannel mask 140 and upon the2D material 130 and well-plugs 202 insource region 150 and drainregion 160. The source/drain material 170 insource region 150 and indrain region 160 may generally formsource contact 151 and forms draincontact 161, respectively. -
Method 500 may continue with removing thechannel mask 140 to expose2D material layer 130 and well-plugs 202 within channel region 155 (block 514). The removal ofchannel mask 140 may also remove with it excess source/drain layer 170 material there above. -
Method 500 may continue with formingsource contact mask 175 and draincontact mask 175 thereby forming channel well 171 having exposed2D layer 130 and well-plugs 202 within channel region 155 (block 516). Thecontact mask 175 may be formed by depositing a mask material that may be removed without damage to theunderlying 2D layer 130 and without damage to the underlying well-plugs 202 withinchannel region 155 and depositing the mask material upon thesource contact 151 anddrain contact 161. Subsequently, the mask material may be removed within thechannel region 155 thereby forming channel well 171 and the mask material covering thesource contact 151 anddrain contact 161 is retained. In embodiments, the geometry of channel well 171 may be chosen to result in the desired geometry ofgate 190 that may be formed therewithin. -
Method 500 may continue with forminggate dielectric layer 180 upon thesource contact mask 175 and thedrain contact mask 175 and upon the exposed2D layer 130 and well-plugs 202 within channel well 171 (block 518). A retained gate dielectric 180′ may be formed by removing portions of thegate dielectric layer 180 material that are not upon the bottom surfaces of channel well 171 withinchannel region 155. -
Method 500 may continue with forminggate 190 upon the retained gate dielectric 180′ (block 522).Method 500 ends atblock 524. -
FIG. 19 illustratesfabrication method 600 ofsemiconductor structure 300 that includes afin 120 having2D material 130 sidewalls.Method 600 begins atblock 602 and continues with forming fin structures within substrate 102 (block 604). Each fin structure includes afin 120 and afin cap 104′ upon the top surface of thefin 120. Thefins 120 may be formed by similar fabrication techniques depicted inFIG. 1 -FIG. 6 and associated text. -
Method 600 may continue with forming well-plugs 202 at the bottom offin wells 121 upon the bottom surface offin wells 121 and upon a lower portion of the sidewalls of fins 120 (block 606). For example, a dielectric layer such as an oxide material layer may be deposited upon thefins 120 and within thefin wells 121 and a subtractive removal technique may remove excess dielectric material from upon thefins 120 and from the upper portion of thefin wells 121, leaving dielectric material within the lower portion offin wells 121. -
Method 600 may continue with forming2D layer 130 upon thefin 120 sidewalls (block 608). For example, a graphene layer is formed upon thefin 120 sidewalls within thesource region 150,drain region 160, and within thechannel region 155. The2D layer 130 is generally not formed upon the upper surface of well-plugs 202 nor is formed upon the fin caps 104′, and as such, the upper surface of well plugs and the fin caps 104′ are substantially (e.g., the majority, or the like) exposed and the2D layer 130 is deposited only upon the sidewalls offins 120. -
Method 600 may continue with forming achannel mask 140 upon the2D layer 130, upon the fin caps 104′, and upon well-plugs 202 within channel region 155 (block 610). Forming thechannel mask 140 may include forming a blanket layer upon the2D layer 130, upon the fin caps 104′, and upon the well-plugs 202 and removing portions of the blanket layer insource region 150 and indrain region 160, such that a remaining portion of the blanket layer inchannel region 155forms channel mask 140. -
Method 600 may continue with forming asource contact 151 and forming adrain contact 161 upon the2D layer 130, upon fin caps 104′, and upon well-plugs 202 adjacent to thechannel mask 140 withinsource region 150 and withindrain region 160, respectively (block 612). Thesource contact 151 anddrain contact 161 may be formed by depositing source/drain material 170 upon thechannel mask 140, upon the fin caps 104′, upon the2D material 130, and upon well-plugs 202 insource region 150 and drainregion 160. The source/drain material 170 insource region 150 and indrain region 160 may generally formsource contact 151 and forms draincontact 161, respectively. -
Method 600 may continue with removing thechannel mask 140 to expose2D material layer 130, fin caps 104′, and well-plugs 202 within channel region 155 (block 614). The removal ofchannel mask 140 may also remove with it excess source/drain layer 170 material there above. -
Method 600 may continue with formingsource contact mask 175 and draincontact mask 175 thereby forming channel well 171 having exposed2D layer 130, fin caps 104′, and well-plugs 202 within channel region 155 (block 616). Thecontact mask 175 may be formed by depositing a mask material that may be removed without damage to theunderlying 2D layer 130, without damage to the underlying well-plugs 202, and without damage to the underlying fin caps 104′ withinchannel region 155 and depositing the mask material upon thesource contact 151 anddrain contact 161. Subsequently, the mask material may be removed within thechannel region 155, thereby forming channel well 171, while the mask material covering thesource contact 151 anddrain contact 161 is retained. In embodiments, the geometry of channel well 171 may be chosen to result in the desired geometry ofgate 190 that may be formed therewithin. -
Method 600 may continue with forminggate dielectric layer 180 upon thesource contact mask 175 and thedrain contact mask 175 and upon the exposed2D layer 130, upon the exposed fin caps 104′, and upon the exposed well-plugs 202 within channel well 171 (block 618). A retained gate dielectric 180′ may be formed by removing portions of thegate dielectric layer 180 material that is not upon the bottom surfaces of channel well 171 withinchannel region 155 and removing thesource mask 175 anddrain mask 175. -
Method 600 may continue with forminggate 190 upon the retained gate dielectric 180′ (block 622).Method 600 ends atblock 624. -
FIG. 20 -FIG. 23 illustrates fabrication stages of semiconductor structure (e.g. structure 200,structure 300, or the like) that includes a fin having 2D material sidewalls, according to exemplary embodiments of the present invention. More specifically,FIG. 20 -FIG. 23 illustrates fabrication stages of asemiconductor structure 300 that includes well-plugs 202. For clarity, similar fabrication stages to those depicted inFIG. 20 -FIG. 23 are contemplated to formsemiconductor structure 200 and would be depicted without fin caps 104′. - Referring now to
FIG. 20 , depicting the semiconductor structure at an intermediate fabrication stage. At the present fabrication stage, a high aspect ratio plasma (HARP)oxide layer 304 is formed upon thesubstrate 102, upon the sidewalls of thefins 120, and upon the fin caps 104′ (i.e. structure 300) or is formed upon thesubstrate 102 and upon the fins 120 (i.e. structure 200). TheHARP layer 304 may be formed to a thickness greater than the height offins 120 and/or greater than the height of the fin caps 104′. In an embodiment, theHARP layer 304 may be formed by depositing silicon oxide and may be subsequently annealed. - Referring now to
FIG. 21 , depicting the semiconductor structure at an intermediate fabrication stage. At the present fabrication stage, the structure undergoes a CMP process to removeundesired HARP layer 304 material above the plane of the upper surface of fins 120 (i.e. structure 200) or above the plane of the upper surface of fins caps (structure 300). - Referring now to
FIG. 22 , depicting the semiconductor structure at an intermediate fabrication stage. At the present fabrication stage, portions of theHARP layer 304 withinfin trenches 121 are removed. The portions of theHARP layer 304 may be removed by subtractive removal techniques. For example, an etchant chosen to remove the material ofHARP layer 304 and to not remove the material ofsubstrate 102 andfins 120 and to not remove the material of fin caps 104′ (if present) may be used to, for instance, remove portions ofHARP layer 304 that are withinfin wells 121. The exposure to the etchant may be timed or otherwise applied selectively so as to retain material ofHARP layer 304 to form well-plugs 202 at the bottom of thefin wells 121. - Referring now to
FIG. 23 , depicting the semiconductor structure at an intermediate fabrication stage. At the present fabrication stage,2D layer 130 is formed only upon the sidewalls of fins 120 (i.e. structure 300) by forming a 2D material upon the exposed sidewall surfaces offins 120. At the present fabrication stage,2D layer 130 may alternatively be formed upon the sidewalls and upper surface of fins 120 (i.e. structure 200) by forming a 2D material upon the exposed sidewall and upper surfaces offins 120. In embodiments, the particular deposition techniques may be selected to achieve desired thickness of2D layer 130 in order to control finFET band gap properties. For example, Ar gas is used to achieve slower sublimation of Si from the SiC surface at high temperatures (e.g., 750° C., or the like) to achieve a few monolayers of Graphene in a controlled manner (each Graphene monolayer is about 0.35 nm thick). Similar fabrication stages as those depicted inFIG. 8 -FIG. 14 and described bymethod 500 ormethod 600 may be subsequently utilized upon the semiconductor structure to formstructure 200 or to formstructure 300, respectively. - It should be noted that some features of the present invention may be used in an embodiment thereof without use of other features of the present invention. As such, the foregoing description should be considered as merely illustrative of the principles, teachings, examples, and exemplary embodiments of the present invention, and not a limitation thereof. It should also be understood that these embodiments are only examples of the many advantageous uses of the innovative teachings herein. In general, statements made in the specification of the present application do not necessarily limit any of the various claimed inventions. Moreover, some statements may apply to some inventive features but not to others.
- The methods as discussed above may be used in the fabrication of integrated circuit chips. The resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare chip, or in a packaged form. In the latter case, the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections). In any case, the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product. The end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products (such as, but not limited to, an information processing system) having a display, a keyboard, or other input device, and a central processor.
- The descriptions of the various embodiments of the present invention have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiment, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
- Unless described otherwise, or in addition to that described herein, “forming,” “depositing,” “deposited,” etc. may include any now known or later developed techniques appropriate for the material to be deposited, including, but not limited to: CVD, LPCVD, PECVD, semi-atmosphere CVD (SACVD), high density plasma CVD (HDPCVD), rapid thermal CVD (RTCVD), ultra-high vacuum CVD (UHVCVD), limited reaction processing CVD (LRPCVD), metalorganic CVD (MOCVD), sputtering deposition, ion beam deposition, electron beam deposition, laser assisted deposition, thermal oxidation, thermal nitridation, spin-on methods, physical vapor deposition (PVD), atomic level deposition (ALD), chemical oxidation, molecular beam epitaxy (MBE), plating or evaporation.
- References herein to terms such as “vertical”, “horizontal”, etc. are made by way of example, and not by way of limitation, to establish a frame of reference. The term “horizontal” as used herein is defined as a plane parallel to the conventional plane or surface of the
substrate 102, regardless of the actual spatial orientation of thesemiconductor substrate 102. The term “vertical” refers to a direction perpendicular to the horizontal, as just defined. Terms, such as “on”, “above”, “below”, “side” (as in “sidewall”), “higher”, “lower”, “over”, “beneath” and “under”, are defined with respect to the horizontal plane. It is understood that various other frames of reference may be employed for describing the present invention without departing from the spirit and scope of the present invention.
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