US20180009200A1 - Plastic substrate with improved hardness and display device including the same - Google Patents
Plastic substrate with improved hardness and display device including the same Download PDFInfo
- Publication number
- US20180009200A1 US20180009200A1 US15/647,010 US201715647010A US2018009200A1 US 20180009200 A1 US20180009200 A1 US 20180009200A1 US 201715647010 A US201715647010 A US 201715647010A US 2018009200 A1 US2018009200 A1 US 2018009200A1
- Authority
- US
- United States
- Prior art keywords
- organic
- layer
- inorganic hybrid
- support member
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229920003023 plastic Polymers 0.000 title claims abstract description 139
- 239000004033 plastic Substances 0.000 title claims abstract description 139
- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 150000002500 ions Chemical class 0.000 claims abstract description 114
- 239000011159 matrix material Substances 0.000 claims abstract description 32
- 238000002834 transmittance Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 228
- 239000012044 organic layer Substances 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 229910052796 boron Inorganic materials 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 239000004698 Polyethylene Substances 0.000 claims description 14
- -1 polyethylene Polymers 0.000 claims description 12
- 239000002952 polymeric resin Substances 0.000 claims description 11
- 229920003002 synthetic resin Polymers 0.000 claims description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004417 polycarbonate Substances 0.000 claims description 10
- 229920000515 polycarbonate Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229920000573 polyethylene Polymers 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 229920002050 silicone resin Polymers 0.000 claims description 7
- 239000004952 Polyamide Substances 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 6
- 229920002647 polyamide Polymers 0.000 claims description 6
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 6
- 229920006324 polyoxymethylene Polymers 0.000 claims description 6
- 229920001155 polypropylene Polymers 0.000 claims description 6
- 229930182556 Polyacetal Natural products 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000001913 cellulose Substances 0.000 claims description 3
- 229920002678 cellulose Polymers 0.000 claims description 3
- 239000010408 film Substances 0.000 description 26
- 238000005468 ion implantation Methods 0.000 description 26
- 239000003990 capacitor Substances 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 17
- 239000000178 monomer Substances 0.000 description 16
- 238000005299 abrasion Methods 0.000 description 15
- 239000010409 thin film Substances 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000004925 Acrylic resin Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000000704 physical effect Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 210000002268 wool Anatomy 0.000 description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000003826 tablet Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
- B32B3/08—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/18—Layered products comprising a layer of metal comprising iron or steel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B23/00—Layered products comprising a layer of cellulosic plastic substances, i.e. substances obtained by chemical modification of cellulose, e.g. cellulose ethers, cellulose esters, viscose
- B32B23/04—Layered products comprising a layer of cellulosic plastic substances, i.e. substances obtained by chemical modification of cellulose, e.g. cellulose ethers, cellulose esters, viscose comprising such cellulosic plastic substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B23/00—Layered products comprising a layer of cellulosic plastic substances, i.e. substances obtained by chemical modification of cellulose, e.g. cellulose ethers, cellulose esters, viscose
- B32B23/04—Layered products comprising a layer of cellulosic plastic substances, i.e. substances obtained by chemical modification of cellulose, e.g. cellulose ethers, cellulose esters, viscose comprising such cellulosic plastic substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B23/08—Layered products comprising a layer of cellulosic plastic substances, i.e. substances obtained by chemical modification of cellulose, e.g. cellulose ethers, cellulose esters, viscose comprising such cellulosic plastic substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/302—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising aromatic vinyl (co)polymers, e.g. styrenic (co)polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
- B32B27/365—Layered products comprising a layer of synthetic resin comprising polyesters comprising polycarbonates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/045—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/033—Pointing devices displaced or positioned by the user, e.g. mice, trackballs, pens or joysticks; Accessories therefor
- G06F3/0354—Pointing devices displaced or positioned by the user, e.g. mice, trackballs, pens or joysticks; Accessories therefor with detection of 2D relative movements between the device, or an operating part thereof, and a plane or surface, e.g. 2D mice, trackballs, pens or pucks
- G06F3/03545—Pens or stylus
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/033—Pointing devices displaced or positioned by the user, e.g. mice, trackballs, pens or joysticks; Accessories therefor
- G06F3/038—Control and interface arrangements therefor, e.g. drivers or device-embedded control circuitry
- G06F3/0383—Signal control means within the pointing device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/04162—Control or interface arrangements specially adapted for digitisers for exchanging data with external devices, e.g. smart pens, via the digitiser sensing hardware
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0442—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using active external devices, e.g. active pens, for transmitting changes in electrical potential to be received by the digitiser
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/10—Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/24—Organic non-macromolecular coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/28—Multiple coating on one surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2270/00—Resin or rubber layer containing a blend of at least two different polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/402—Coloured
- B32B2307/4026—Coloured within the layer by addition of a colorant, e.g. pigments, dyes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/536—Hardness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/554—Wear resistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/732—Dimensional properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2383/00—Polysiloxanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/206—Organic displays, e.g. OLED
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/02—Materials and properties organic material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/09—Materials and properties inorganic glass
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
-
- H01L2251/5338—
-
- H01L27/3244—
-
- H01L51/0097—
-
- H01L51/524—
-
- H01L51/56—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- Embodiments of the present invention relate to a plastic substrate having improved hardness, a method of manufacturing the plastic substrate having improved hardness and a display device including the plastic substrate having improved hardness.
- a display device includes a window for protecting a display surface.
- the window may include glass or tempered glass with good mechanical properties.
- glass is heavy and prone to breakage by impact, materials that may replace glass are being studied.
- Plastic materials may be a suitable substitute for glass. Plastic materials have the characteristic of being lightweight and not easily broken. However, plastic materials generally have lower hardness and lower abrasion resistance than glass.
- One or more embodiments of the present invention are directed to a plastic substrate having excellent hardness and abrasion resistance and a method of manufacturing the plastic substrate.
- one or more embodiments of the present invention are directed to a display device including the plastic substrate having excellent hardness and abrasion resistance.
- a plastic substrate includes: a plastic support member having light transmittance; and a first organic-inorganic hybrid layer on the plastic support member.
- the first organic-inorganic hybrid layer includes; a first organic-inorganic hybrid matrix; and ions implanted into the first organic-inorganic hybrid matrix at an a side opposite to a side adjacent the plastic support member.
- An amount of the ions per unit area is in a range from about 2 ⁇ 10 13 /cm 2 to about 2 ⁇ 10 14 /cm 2 .
- An implantation depth of the ions may be in a range from about 300 nm to about 400 nm.
- the ions may be implanted at an energy in a range from about 60 keV to about 80 keV.
- the ions may include at least one of a boron (B) ion and a nitrogen (N) ion.
- the first organic-inorganic hybrid matrix may include a silicone resin and a polymer resin.
- the first organic-inorganic hybrid layer may have a thickness ranging from about 2 ⁇ m to about 20 ⁇ m.
- the plastic support member may include at least one selected from the group consisting of: a polycarbonate (PC) film, a polyacrylic film, a polymethyl methacrylate (PMMA) film, a polyimide (PI) film, a polyethylene (PET) film, a polypropylene (PP) film, a polystyrene (PS) film, a polyamide (PA) film, a polyacetal (POM) film, a polybutylene terephthalate (PBT) film, a cellulose film and an acrylic-polycarbonate copolymer alloy film.
- PC polycarbonate
- PMMA polyacrylic film
- PMMA polymethyl methacrylate
- PI polyimide
- PET polyethylene
- PP polypropylene
- PS polystyrene
- PA polyamide
- POM polyacetal
- PBT polybutylene terephthalate
- the plastic substrate may further include a first inorganic layer between the plastic support member and the first organic-inorganic hybrid layer.
- the plastic substrate may further include a second organic-inorganic hybrid layer between the plastic support member and the first inorganic layer.
- the plastic substrate may further include a first organic layer between the plastic support member and the first organic-inorganic hybrid layer.
- a method of manufacturing a plastic substrate includes: forming a first organic-inorganic hybrid matrix on a plastic support member, the plastic support member having light transmittance; and implanting ions into the first organic-inorganic hybrid matrix.
- An amount of the ions per unit area is in a range from about 2 ⁇ 10 13 /cm 2 to about 2 ⁇ 10 14 /cm 2 .
- An implantation depth of the ions may be in a range from about 300 nm to about 400 nm.
- the ions may be implanted at an energy in a range from about 60 keV to about 80 keV.
- the ions may include at least one of a boron (B) ion and a nitrogen (N) ion.
- a display device includes: a display panel; and a window on the display panel.
- the window includes: a plastic support member having light transmittance; and a first organic-inorganic hybrid layer on the plastic support member, the first organic-inorganic hybrid layer including ions implanted at a side an opposite to a side adjacent the plastic support member.
- An amount of the ions per unit area is in a range from about 2 ⁇ 10 13 /cm 2 to about 2 ⁇ 10 14 /cm 2 .
- FIG. 1 is a cross-sectional view illustrating a plastic substrate according to a first exemplary embodiment
- FIG. 2 is a cross-sectional view illustrating a plastic substrate according to a second exemplary embodiment
- FIG. 3 is a cross-sectional view illustrating a plastic substrate according to a third exemplary embodiment
- FIG. 4 is a cross-sectional view illustrating a plastic substrate according to a fourth exemplary embodiment
- FIG. 5 is a cross-sectional view illustrating a plastic substrate according to a fifth exemplary embodiment
- FIG. 6 is a cross-sectional view illustrating a plastic substrate according to a sixth exemplary embodiment
- FIG. 7 is a cross-sectional view illustrating a plastic substrate according to a seventh exemplary embodiment
- FIG. 8 is a cross-sectional view illustrating a plastic substrate according to an eighth exemplary embodiment
- FIG. 9 is a chart illustrating results of a scratch resistance evaluation
- FIG. 10 is a chart illustrating results of a vibration abrasion resistance evaluation
- FIGS. 11A-11F are graphs illustrating ion intensity according to an ion implantation depth
- FIG. 12 is a plan view illustrating an organic light emitting diode (“OLED”) display device according to a ninth exemplary embodiment
- FIG. 13 is a cross-sectional view taken along the line I-I′ of FIG. 12 ;
- FIG. 14 is a cross-sectional view illustrating an OLED display device according to a tenth exemplary embodiment
- FIG. 15 is a plan view illustrating a liquid crystal display (“LCD”) device according to an eleventh exemplary embodiment.
- FIG. 16 is a cross-sectional view taken along the line II-II′ of FIG. 15 .
- a layer, area, or plate is referred to as being “below” another layer, area, or plate, it may be directly below the other layer, area, or plate, or intervening layers, areas, or plates may be present therebetween. Conversely, when a layer, area, or plate is referred to as being “directly below” another layer, area, or plate, intervening layers, areas, or plates may be absent therebetween.
- spatially relative terms “below”, “beneath”, “less”, “above”, “upper” and the like, may be used herein for ease of description to describe the relations between one element or component and another element or component as illustrated in the drawings. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation depicted in the drawings. For example, in the case where a device illustrated in the drawing is turned over, the device positioned “below” or “beneath” another device may be placed “above” another device. Accordingly, the illustrative term “below” may include both the lower and upper positions. The device may also be oriented in the other direction and thus the spatially relative terms may be interpreted differently depending on the orientations.
- “About” or “approximately” as used herein is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within ⁇ 30%, 20%, 10%, 5%, etc. of the stated value.
- any numerical range disclosed and/or recited herein is intended to include all sub-ranges of the same numerical precision subsumed within the recited range.
- a range of “1.0 to 10.0” is intended to include all subranges between (and including) the recited minimum value of 1.0 and the recited maximum value of 10.0, that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6.
- Any maximum numerical limitation recited herein is intended to include all lower numerical limitations subsumed therein, and any minimum numerical limitation recited in this specification is intended to include all higher numerical limitations subsumed therein.
- FIG. 1 a first exemplary embodiment is described with reference to FIG. 1 .
- FIG. 1 is a cross-sectional view illustrating a plastic substrate 101 according to a first exemplary embodiment.
- the plastic substrate 101 includes a plastic support member 110 having light transmittance and a first organic-inorganic hybrid layer 121 on the plastic support member 110 .
- a plastic film having light transmittance may be utilized as the plastic support member 110 .
- a polycarbonate (PC) film, a polyacrylic film, a polymethyl methacrylate (PMMA) film, a polyimide (PI) film, a polyethylene (PET) film, a polypropylene (PP) film, a polystyrene (PS) film, a polyamide (PA) film, a polyacetal (POM) film, a polybutylene terephthalate (PBT) film, a cellulose film and/or an acrylic-polycarbonate copolymer alloy film may be utilized as the plastic support member 110 .
- a film including a copolymer of PC and PMMA may be used as the plastic support member 110 .
- the copolymer of PC and PMMA may include PC in an amount ranging from about 50 percent by weight (wt %) to about 70 wt % and PMMA in an amount ranging from about 30 wt % to about 50 wt %.
- a film including a copolymer of PC and PMMA in a weight ratio of 6:4 may be utilized as the plastic support member 110 .
- the plastic support member 110 may have a thickness ranging from about 400 ⁇ m to about 1000 ⁇ m. When the thickness of the plastic support member 110 is less than about 400 ⁇ m, the supporting strength may be relatively weak (or weakened), and when the thickness is greater than about 1000 ⁇ m, it is disadvantageous for slimming down the device (or the device may be relatively thick).
- the first organic-inorganic hybrid layer 121 may include a first organic-inorganic hybrid matrix 120 and an ion 150 implanted into the first organic-inorganic hybrid matrix 120 .
- the first organic-inorganic hybrid matrix 120 may include a polymer resin and a silicone resin.
- the polymer resin may include at least one of an acrylic resin, a urethane resin and/or a urethane-acrylate resin.
- a urethane-acrylate copolymer resin may be utilized as the polymer resin.
- the polymer resin is not limited thereto.
- the silicone resin may include at least one of a monomer represented by the following Chemical Formula 1 and a monomer represented by the following Chemical Formula 2.
- the silicone resin may be formed by polymerization of a composition including at least one of the monomer represented by the following Chemical Formula 1 and the monomer represented by the following Chemical Formula 2.
- respective ones of R 21 , R 22 , R 23 and R 24 are one of an amino group, an epoxy group, a phenyl group, an acryl group and/or a vinyl group, and respective ones of R 25 and R 26 are hydrogen (H) and/or a hydrocarbon group having 1 to 6 carbon atoms.
- the first organic-inorganic hybrid matrix 120 may be formed by polymerization of a polymerizable composition including a polymer resin-forming monomer and/or a silicone resin-forming monomer.
- the first organic-inorganic hybrid layer 121 has a thickness ranging from about 2 ⁇ m to about 20 ⁇ m.
- the first organic-inorganic hybrid layer 121 When the thickness of the first organic-inorganic hybrid layer 121 is less than about 2 ⁇ m, the first organic-inorganic hybrid layer 121 may not have sufficient strength and ion implantation may be difficult (or may not be easy). In addition, when the thickness of the first organic-inorganic hybrid layer 121 is greater than about 20 ⁇ m, it is disadvantageous for slimming down the device (or the device may be relatively thick).
- the ions 150 may be implanted at (or on) a side of the first organic-inorganic hybrid matrix 120 that is opposite to the plastic support member 110 .
- the ions 150 may be implanted through a surface 120 a of the first organic-inorganic hybrid matrix 120 at (or on) an opposite side from the plastic support member 110 .
- An amount (or quantity) of ions 150 implanted into the first organic-inorganic hybrid matrix 120 may range from about 2 ⁇ 10 13 /cm 2 to about 2 ⁇ 10 14 /cm 2 .
- the amount of ions 150 is expressed by the number of ions per unit area (cm 2 ).
- an amount of ions 150 per unit area is referred to as an “ion amount”.
- the hardness and strength of the first organic-inorganic hybrid layer 121 may be relatively low (or lower than desired).
- yellow shift i.e., a color shift toward yellow, may occur.
- the ions 150 implanted into the first organic-inorganic hybrid matrix 120 may include at least one of boron (B) ions and nitrogen (N) ions.
- the condition for boron (B) ion implantation and the condition for nitrogen (N) ion implantation may be different from each other.
- An implantation depth of the ions 150 may be in a range from about 300 nm to about 400 nm.
- the implantation depth of the ions 150 is represented by a distance dl from the surface 120 a.
- the ion amount of about 2 ⁇ 10 13 /cm 2 or more is maintained from the surface 120 a of the first organic-inorganic hybrid matrix 120 to a depth of about 300 nm to about 400 nm (or such that the distance dl is about 300 nm to about 400 nm).
- the first organic-inorganic hybrid layer 121 may be damaged.
- the ions 150 are implanted at an energy ranging from about 60 keV to about 80 keV.
- the ion implantation energy is less than about 60 keV, an ion implantation efficiency is lowered.
- the ion implantation energy exceeds about 80 keV, the first organic-inorganic hybrid layer 121 may be damaged during the ion implantation process.
- the first organic-inorganic hybrid layer 121 may further include fluorine (F) in an amount ranging from about 0.001 wt % to about 0.2 wt % with respect to the total weight of the first organic-inorganic hybrid layer 121 .
- F fluorine
- an anti-finger layer may be provided on the first organic-inorganic hybrid layer 121 .
- a second exemplary embodiment is described below with reference to FIG. 2 .
- descriptions of components that are the same or substantially the same as those described above may be omitted.
- FIG. 2 is a cross-sectional view illustrating a plastic substrate 102 according to the second exemplary embodiment.
- the plastic substrate 102 includes a plastic support member 110 , a first inorganic layer 131 on the plastic support member 110 and a first organic-inorganic hybrid layer 121 on the first inorganic layer 131 .
- the kind of the first inorganic layer 131 is not particularly limited.
- the first inorganic layer 131 may include a layer including an inorganic material.
- the first inorganic layer 131 may include, for example, a silicone resin.
- the first inorganic layer 131 may include a polymer resin and inorganic particles dispersed in the polymer resin.
- the first inorganic layer 131 may include a polymer resin and silicon oxide (SiOx) dispersed in the polymer resin.
- the plastic support member 110 and the first inorganic layer 131 may have a strong bonding force.
- the first inorganic layer 131 may have a thickness ranging from about 3 ⁇ m to about 10 ⁇ m. When the thickness of the first inorganic layer 131 is less than about 3 ⁇ m, the strength of the plastic substrate 102 may be relatively weak (or weakened). In addition, when the thickness of the first inorganic layer 131 is greater than about 10 ⁇ m, it may be disadvantageous to slim down the device (or the device may be relatively thick).
- FIG. 3 is a cross-sectional view illustrating a plastic substrate 103 according to the third exemplary embodiment.
- the plastic substrate 103 includes a plastic support member 110 , a first organic layer 141 on the plastic support member 110 and a first organic-inorganic hybrid layer 121 on the first organic layer 141 .
- the kind of the first organic layer 141 is not particularly limited.
- the first organic layer 141 may include at least one of an acrylic resin, a urethane resin and a urethane-acrylate resin.
- the first organic layer 141 may be formed by curing a coating solution for forming an organic layer.
- the first organic layer 141 may serve as a buffer for stress generated between layers.
- the first organic layer 141 may have a thickness ranging from about 5 ⁇ m to about 10 ⁇ m. When the thickness of the first organic layer 141 is less than about 5 ⁇ m, an interlayer buffer effect may be reduced. When the thickness is greater than about 10 ⁇ m, it may be disadvantageous to slim down the device (or the device may be relatively thick).
- FIG. 4 is a cross-sectional view illustrating a plastic substrate 104 according to the fourth exemplary embodiment.
- the plastic substrate 104 includes a plastic support member 110 , a second organic-inorganic hybrid layer 122 on the plastic support member 110 , a first inorganic layer 131 on the second organic-inorganic hybrid layer 122 and a first organic-inorganic hybrid layer 121 on the first inorganic layer 131 .
- ions 150 are not implanted into the second organic-inorganic hybrid layer 122 .
- the second organic-inorganic hybrid layer 122 may have a composition that is substantially the same as that of a first organic-inorganic hybrid matrix 120 (see, e.g., FIG. 1 ).
- FIG. 5 is a cross-sectional view illustrating a plastic substrate 105 according to the fifth exemplary embodiment.
- the plastic substrate 105 includes a plastic support member 110 , a first organic-inorganic hybrid layer 121 on the plastic support member 110 and a third organic-inorganic hybrid layer 123 on an opposite surface (or opposite side) of the plastic support member 110 from the first organic-inorganic hybrid layer 121 .
- the first organic-inorganic hybrid layer 121 may be on (or at) a first surface of the plastic support member 110 and the third organic-inorganic hybrid layer 123 may be on (or at) a second surface of the plastic support member 110 .
- the first surface of the plastic support member 110 may be opposite to the second surface of the plastic support member 110 .
- ions 150 are not implanted into the third organic-inorganic hybrid layer 123 .
- the third organic-inorganic hybrid layer 123 may have a composition that is substantially the same as that of the first organic-inorganic hybrid matrix 120 .
- FIG. 6 is a cross-sectional view illustrating a plastic substrate 106 according to the sixth exemplary embodiment.
- the plastic substrate 106 includes a plastic support member 110 , a first inorganic layer 131 on (or at) a surface (or a first surface) of the plastic support member 110 , a first organic-inorganic hybrid layer 121 on the first inorganic layer 131 , a second inorganic layer 132 on (or at) another surface (or a second surface) of the plastic support member 110 and a third organic-inorganic hybrid layer 123 on the second inorganic layer 132 .
- the second inorganic layer 132 may have a composition that is substantially the same as that of the first inorganic layer 131 .
- FIG. 7 is a cross-sectional view illustrating a plastic substrate 107 according to the seventh exemplary embodiment.
- the plastic substrate 107 includes a plastic support member 110 , a first organic layer 141 on (or at) a surface (or a first surface) of the plastic support member 110 , a first organic-inorganic hybrid layer 121 on the first organic layer 141 , a second organic layer 142 on (or at) another surface (or a second surface opposite to the first surface) of the plastic support member 110 and a third organic-inorganic hybrid layer 123 on the second organic layer 142 .
- the second organic layer 142 may have a composition that is substantially the same as that of the first organic layer 141 .
- FIG. 8 is a cross-sectional view illustrating a plastic substrate 108 according to the eighth exemplary embodiment.
- the plastic substrate 108 includes a plastic support member 110 , a second organic-inorganic hybrid layer 122 on (or at) a surface (or a first surface) of the plastic support member 110 , a first inorganic layer 131 on the second organic-inorganic hybrid layer 122 , a first organic-inorganic hybrid layer 121 on the first inorganic layer 131 , a fourth organic-inorganic hybrid layer 124 on (or at) another surface (or a second surface opposite to the first surface) of the plastic support member 110 , a second inorganic layer 132 on the fourth organic-inorganic hybrid layer 124 and a third organic-inorganic hybrid layer 123 on the second inorganic layer 132 .
- the second organic-inorganic hybrid layer 122 , the third organic-inorganic hybrid layer 123 and the fourth organic-inorganic hybrid layer 124 may each have substantially the same composition.
- a method of manufacturing a plastic substrate according to an exemplary embodiment includes forming the first organic-inorganic hybrid matrix 120 on the plastic support member 110 having light transmitting characteristics and implanting ions 150 into the first organic-inorganic hybrid matrix 120 .
- the plastic support member 110 in order to manufacture the plastic substrate 105 , first, the plastic support member 110 is immersed in a coating solution for forming the organic-inorganic hybrid matrix such that a coating layer is formed on each of opposite sides of the plastic support member 110 (e.g., on a first surface of the plastic support member 110 and on a second surface of the plastic support member 110 ).
- the coating layer formed on the first surface of the plastic support member 110 is cured and the ions 150 are implanted therein to form the first organic-inorganic hybrid layer 121 .
- the coating layer formed on the second surface of the plastic support member 110 is cured to form the third organic-inorganic hybrid layer 123 .
- the coating solution for forming the organic-inorganic hybrid matrix may include an organic binder component and a silicone monomer.
- the silicone monomer includes at least one of a monomer represented by the following Chemical Formula 1 and a monomer represented by the following Chemical Formula 2.
- respective ones of R 21 , R 22 , R 23 and R 24 are one of an amino group, an epoxy group, a phenyl group, an acryl group and/or a vinyl group, and respective ones of R 25 and R 26 are hydrogen (H) and/or a hydrocarbon group having 1 to 6 carbon atoms.
- the organic binder component includes monomers, oligomers and/or photoinitiators.
- the organic binder component may include a monomer in an amount ranging from about 20 wt % to about 60 wt %, an oligomer in an amount ranging from about 20 wt % to about 60 wt %, a rubber-based flexible component in an amount ranging from about 10 wt % to about 50 wt % and a photoinitiator in an amount ranging from about 1 wt % to about 10 wt %, with respect to the total weight of the organic binder component.
- the monomer may include, for example, at least one of an acrylic monomer, a urethane monomer, and a urethane-acrylic monomer.
- the oligomer may use urethane (metha) acrylate having a weight average molecular weight (Mw) ranging from about 5,000 to about 50,000.
- Mw weight average molecular weight
- the weight average molecular weight (Mw) of the oligomer is more than about 50,000, opacity in a high temperature and high humidity environment may be unsuitable.
- the weight average molecular weight (Mw) of the oligomer is less than about 5,000, the coating solution for forming an organic-inorganic hybrid layer may not be maintained in a solid state at room temperature.
- the first and third organic-inorganic hybrid layers 121 and 123 may be formed thereon (see, e.g., FIG. 6 ).
- the first and third organic-inorganic hybrid layers 121 and 123 may be formed thereon (see, e.g., FIG. 7 ).
- the first and second inorganic layers 131 and 132 are formed thereon, and then the first and third organic-inorganic hybrid layers 121 and 123 may be formed thereon (see, e.g., FIG. 8 ).
- a sample having a structure that is substantially the same as that of the plastic substrate 101 described above in reference to the first exemplary embodiment is produced.
- the plastic support member 110 For example, a polycarbonate film having a thickness of about 550 ⁇ m is utilized as the plastic support member 110 .
- boron (B) ions are implanted into the first organic-inorganic hybrid matrix 120 of each sample according to the ion implantation conditions illustrated in Table 1 below to produce a plastic substrate.
- Table 1 The evaluation results of the physical properties are illustrated in Table 1.
- Reference Example 1 is a sample in which ion implantation is not performed.
- the pencil hardness is evaluated in accordance with the pencil hardness test specified in JIS K 5600-5-4. For example, the pencil hardness is measured five times on the sample with respect to a weight of 1 kg, and the smallest value is selected as a pencil hardness of the sample.
- the “H” lead or a “B” lead increases, the “H” lead becomes harder, whereas the “B” lead becomes smoother. That is, “9H” denotes a highest hardness, and the hardness decreases in the following order: 8H, 7H, 6H, 5H, 4H, 3H, 2H, H, F, B, 2B, 3B, 4B, 5B, 6B, 7B, 8B and 9B.
- transmittance and reflectance are measured using a spectrophotometer (exemplary device name: “COH-400”).
- discoloration of the sample is visually identified. For example, it is evaluated whether or not the yellow shift is observed in the sample.
- the reference mark “YI” indicates a yellow index. The larger the YI value is, the larger the yellow shift.
- the chromaticity (b*) represents the yellow shift according to the CIE 1976(L*,a*,b*) color coordinates.
- a positive value of 1b* corresponds to the degree of yellow shift and a negative value of 1b* corresponds to the degree of blue shift.
- N ions are implanted into the first organic-inorganic hybrid matrix 120 of each sample according to the ion implantation conditions illustrated in Table 2 below to produce a plastic substrate.
- Table 2 The evaluation results of the physical properties are illustrated in Table 2.
- FIG. 9 shows the results of a scratch resistance evaluation.
- scratch resistance evaluation For scratch resistance evaluation, scratch resistance evaluation using a steel wool is performed.
- the scratch resistance evaluation method using a steel wool is as follows. A sample having a size of 200 mm ⁇ 200 mm is manufactured using a plastic substrate. In addition, a cylinder having a diameter of about 25 mm and a flat surface having a steel wool #0000 uniformly attached thereto is prepared. Subsequently, a surface of the sample is rubbed back and forth six hundred times with the flat surface of the cylinder having the steel wool #0000 thereon, with a weight of about 1.0 kg at a speed of about 100 mm a second, and the depth and width of scratches generated on the surface of the sample are measured.
- the scratch resistance evaluation results for Reference Example 1 and Samples 1, 6 and 9 are shown in FIG. 9 .
- samples 6 and 9 have particularly excellent scratch resistance.
- FIG. 10 shows the results of a vibration abrasion resistance evaluation.
- a commercially available vibration abrasion tester e.g., a Rösler vibration abrasion tester
- Vibration and abrasion are applied to the sample by using the vibration abrasion tester.
- the abrasion resistance is evaluated by the ratio of abrasion resistance of samples to glass over time.
- FIG. 10 shows results of vibration abrasion resistance evaluation for Samples 1, 4, 6 and 9.
- Samples 1 and 9 have excellent abrasion resistance.
- FIGS. 11A, 11B, 11C, 11D, 11E and 11F are graphs illustrating ion intensity depending on an ion implantation depth.
- FIGS. 11A, 11B, 11C, 11D, 11E and 11F illustrate the ion intensity (c/s) depending on the ion implantation depth (nm) when ions 150 are implanted into the first organic-inorganic hybrid matrix 120 .
- FIG. 11A shows the ion intensity depending on the ion implantation depth when ions 150 of about 1.0 ⁇ 10 14 /cm 2 are implanted with an energy of about 80 keV
- FIG. 11B shows the ion intensity depending on the ion implantation depth when ions 150 of about 5.0 ⁇ 10 14 /cm 2 are implanted with an energy of about 80 keV
- FIG. 11C shows the ion intensity depending on the ion implantation depth when ions 150 of about 1.0 ⁇ 10 15 /cm 2 are implanted with an energy of about 80 keV
- FIG. 11A shows the ion intensity depending on the ion implantation depth when ions 150 of about 1.0 ⁇ 10 14 /cm 2 are implanted with an energy of about 80 keV
- FIG. 11B shows the ion intensity depending on the ion implantation depth when ions 150 of about 5.0 ⁇ 10 14 /cm 2 are implanted with an energy of about 80 keV
- FIG. 11C
- FIG. 11D shows the ion intensity depending on the ion implantation depth when ions 150 of about 1.0 ⁇ 10 14 /cm 2 are implanted with an energy of about 60 keV
- FIG. 11E shows the ion intensity depending on the ion implantation depth when ions 150 of about 5.0 ⁇ 10 14 /cm 2 are implanted with an energy of about 60 keV
- FIG. 11F shows the ion intensity depending on the ion implantation depth when ions 150 of about 1.0 ⁇ 10 15 /cm 2 are implanted with an energy of about 60 keV.
- the ion intensity depending on the ion implantation depth was measured twice.
- the arrow illustrated in FIGS. 11A, 11B, 11C, 11D, 11E and 11F indicates a critical point of ion intensity.
- the depth at the critical point of ion intensity is referred to as the ion implantation depth.
- FIGS. 11A, 11B, 11C, 11D, 11E and 11F may be summarized in Table 3 below.
- ions 150 when ions 150 are implanted at an energy ranging from about 60 keV to about 80 keV, ions 150 are implanted to a depth ranging from about 300 nm to about 400 nm.
- FIG. 12 is a plan view illustrating an OLED display device 109 according to the ninth exemplary embodiment
- FIG. 13 is a cross-sectional view taken along the line I-I′ of FIG. 12 .
- the OLED display device 109 includes a display panel 210 and a window 100 on the display panel 210 .
- the display panel 210 of the OLED display device 109 includes a first substrate 211 , a driving circuit unit 230 and an OLED 310 .
- the first substrate 211 may include an insulating material such as glass, quartz, ceramic, plastic, or the like. Further, a polymer film may be utilized for the first substrate 211 .
- a buffer layer 221 is disposed on the first substrate 211 .
- the buffer layer 221 may include one or more layers selected from various inorganic layers and organic layers.
- the buffer layer 221 may be omitted.
- the driving circuit unit 230 is disposed on the buffer layer 221 .
- the driving circuit unit 230 includes a plurality of thin film transistors (“TFTs”) (e.g., a switching TFT 10 and a driving TFT 20 ) and drives the OLED 310 .
- TFTs thin film transistors
- the OLED 310 emits light in accordance with a driving signal received from the driving circuit unit 230 to display an image.
- FIGS. 12 and 13 illustrate an active matrix-type organic light emitting diode (AMOLED) display device 109 having a 2Tr-1Cap structure.
- the 2Tr-1Cap structure may include two TFTs, e.g., the switching TFT 10 and the driving TFT 20 and one capacitor 80 in each pixel, but exemplary embodiments are not limited thereto.
- the OLED display device 109 may include three or more TFTs and two or more capacitors in each pixel and may further include additional wirings.
- the term “pixel” refers to a smallest unit for displaying an image and the OLED display device 109 displays an image using a plurality of pixels.
- Each pixel PX includes the switching TFT 10 , the driving TFT 20 , the capacitor 80 and the OLED 310 .
- a gate line 251 extending along one direction (or a first direction) and a data line 271 and a common power line 272 insulated from and intersecting the gate line 251 are also provided at the driving circuit unit 230 .
- Each pixel PX may be defined by the gate line 251 , the data line 271 and the common power line 272 as a boundary, but exemplary embodiments are not limited thereto.
- the pixels PX may be defined by a pixel defining layer and/or a black matrix.
- the OLED 310 includes a first electrode 311 , a light emitting layer 312 on the first electrode 311 and a second electrode 313 on the light emitting layer 312 .
- the light emitting layer 312 includes a low molecular organic material or a high molecular organic material. Holes and electrons are injected into the light emitting layer 312 from the first electrode 311 and the second electrode 313 , respectively, and combined therein to form an exciton.
- the OLED 310 emits light when the exciton falls from an excited state to a ground state.
- the capacitor 80 includes a pair of capacitor plates (i.e., capacitor plates 258 and 278 ), having an insulating interlayer 245 interposed therebetween.
- the insulating interlayer 245 may be a dielectric element.
- a capacitance of the capacitor 80 is determined by electric charges accumulated in the capacitor 80 and a voltage across the pair of capacitor plates (i.e., capacitor plates 258 and 278 ).
- the switching TFT 10 includes a switching semiconductor layer 231 , a switching gate electrode 252 , a switching source electrode 273 and a switching drain electrode 274 .
- the driving TFT 20 includes a driving semiconductor layer 232 , a driving gate electrode 255 , a driving source electrode 276 and a driving drain electrode 277 .
- a gate insulating layer 241 is further provided to insulate the switching semiconductor layer 231 and the switching gate electrode 252 and to insulate the driving semiconductor layer 232 and the driving gate electrode 255 .
- the switching TFT 10 may function as a switching element which selects a pixel to perform light emission.
- the switching gate electrode 252 is connected to the gate line 251 and the switching source electrode 273 is connected to the data line 271 .
- the switching drain electrode 274 is connected to one of the capacitor plates, e.g., the capacitor plate 258 , and is spaced apart from the switching source electrode 273 .
- the driving TFT 20 applies a driving power, which allows the light emitting layer 312 of the OLED 310 in a selected pixel to emit light, to the first electrode 311 which is a pixel electrode.
- the driving gate electrode 255 is connected to the capacitor plate 258 that is connected to the switching drain electrode 274 .
- Each of the driving source electrode 276 and the other of the capacitor plates, e.g., the capacitor plate 278 is connected to the common power line 272 .
- the driving drain electrode 277 is connected to the first electrode 311 of the OLED 310 through a contact hole (or a contact opening) defined in a planarization layer 246 .
- the switching TFT 10 is driven based on a gate voltage applied to the gate line 251 and serves to transmit a data voltage applied to the data line 271 to the driving TFT 20 .
- a voltage equivalent to a difference between a common voltage applied to the driving TFT 20 from the common power line 272 and the data voltage transmitted by (or from) the switching TFT 10 is stored in the capacitor 80 and a current corresponding to the voltage stored in the capacitor 80 flows to the OLED 310 through the driving TFT 20 such that the OLED 310 may emit light.
- the first electrode 311 is a reflective electrode and the second electrode 313 is a semi-transmissive electrode. Accordingly, a light generated in the light emitting layer 312 is emitted through the second electrode 313 .
- the first electrode 311 may include a reflective layer including one or more metals selected from: magnesium (Mg), silver (Ag), gold (Au), calcium (Ca), lithium (Li), chromium (Cr), copper (Cu) and aluminum (Al), and a transparent conductive layer on the reflective layer.
- the transparent conductive layer may include a transparent conductive oxide (TCO).
- TCO transparent conductive oxide
- Examples of the TCO may include: indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), aluminum zinc oxide (AZO), and/or indium oxide (In 2 O 3 ).
- the first electrode 311 may have a triple-layer structure in which a transparent conductive layer, a reflective layer and a transparent conductive layer are sequentially stacked.
- the second electrode 313 may include a semi-transmissive layer including one or more metals selected from: magnesium (Mg), silver (Ag), gold (Au), calcium (Ca), lithium (Li), chromium (Cr), copper (Cu) and aluminum (Al).
- Mg magnesium
- Au gold
- Ca calcium
- Li lithium
- Cr chromium
- Cu copper
- Al aluminum
- At least one of a hole injection layer (HIL) and a hole transport layer (HTL) may further be provided between the first electrode 311 and the light emitting layer 312 and at least one of an electron transport layer (ETL) and an electron injection layer (EIL) may further be provided between the light emitting layer 312 and the second electrode 313 .
- the light emitting layer 312 , the hole injection layer (HIL), the hole transport layer (HTL), the electron transport layer (ETL) and the electron injection layer (EIL) may include an organic material and thus may be referred to as an organic layer.
- a pixel defining layer 290 is disposed on the driving circuit unit 230 and has an opening.
- the first electrode 311 , the light emitting layer 312 and the second electrode 313 are sequentially stacked in the opening of the pixel defining layer 290 .
- the second electrode 313 is formed on the pixel defining layer 290 as well as the light emitting layer 312 .
- the hole injection layer (HIL), the hole transport layer (HTL), the electron transport layer (ETL) and the electron injection layer (EIL) may also be disposed between the pixel defining layer 290 and the second electrode 313 .
- the OLED 310 generates light from the light emitting layer 312 positioned in the opening of the pixel defining layer 290 .
- the pixel defining layer 290 may define a light emitting area.
- a capping layer may be provided on the second electrode 313 , which protects the OLED 310 from an external environment.
- a second substrate 212 is disposed on the second electrode 313 .
- the second substrate 212 seals the OLED 310 together with the first substrate 211 .
- the second substrate 212 similar to the first substrate 211 , may include an insulating material such as glass, quartz, ceramic, plastic, or the like.
- a buffer material 302 may be disposed between the OLED 310 and the second substrate 212 .
- the buffer material 302 protects the OLED 310 and the like against an impact that may be externally applied to the OLED display device 109 .
- the buffer material 302 may include at least one of, for example, a urethane-based resin, an epoxy-based resin, an acrylic resin, and silicone that is an inorganic sealant.
- An adhesive layer 295 is disposed on the display panel 210 and the window 100 is disposed on the adhesive layer 295 .
- One of the plastic substrates 101 , 102 , 103 , 104 , 105 , 106 , 107 and 108 according to the first, second, third, fourth, fifth, sixth, seventh and eighth exemplary embodiments may be utilized as the window 100 .
- the first organic-inorganic hybrid layer 121 of the plastic substrates 101 , 102 , 103 , 104 , 105 , 106 , 107 and 108 according to the first, second, third, fourth, fifth, sixth, seventh and eighth exemplary embodiments is positioned on the opposite side from the display panel 210 .
- FIG. 14 is a cross-sectional view illustrating an OLED display device 1010 according to a tenth exemplary embodiment.
- the OLED display device 1010 according to the tenth exemplary embodiment includes a thin film encapsulation layer 350 provided on the second electrode 313 to protect the OLED 310 .
- the thin film encapsulation layer 350 includes one or more inorganic layers and one or more organic layers, and substantially prevents outside air such as moisture or oxygen from permeating into the OLED 310 , or reduces the likelihood thereof.
- the thin film encapsulation layer 350 may have a structure in which the inorganic layers 351 , 353 and 355 and the organic layers 352 and 354 are alternately stacked.
- the thin film encapsulation layer 350 includes three inorganic layers (i.e., the inorganic layers 351 , 353 and 355 ) and two organic layers (i.e., the organic layers 352 and 354 ), but the structure of the thin film encapsulation layer 350 according to the tenth exemplary embodiment is not limited thereto.
- Each of the inorganic layers 351 , 353 and 355 may include one or more inorganic materials, such as Al 2 O 3 , TiO 2 , ZrO, SiO 2 , AlON, AlN, SiON, Si 3 N 4 , ZnO and Ta 2 O 5 .
- the inorganic layers 351 , 353 and 355 may be formed through methods such as a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.
- CVD chemical vapor deposition
- ALD atomic layer deposition
- exemplary embodiments are not limited thereto and the inorganic layers 351 , 353 and 355 may be formed using various methods known to those skilled in the art.
- the organic layers 352 and 354 may include a polymer-based material.
- the polymer-based material may include, for example, an acrylic resin, an epoxy resin, polyimide and/or polyethylene.
- the organic layers 352 and 354 may be formed through a thermal deposition process. The thermal deposition process for forming the organic layers 352 and 354 may be performed in a temperature range that may not damage the OLED 310 .
- the tenth exemplary embodiment is not limited thereto and the organic layers 352 and 354 may be formed using various methods known to those skilled in the pertinent art.
- the inorganic layers 351 , 353 , and 355 which have a high density of thin layers, may prevent or efficiently reduce infiltration of moisture and/or oxygen. Permeation of moisture and oxygen into the OLED 310 may be largely prevented by the inorganic layers 351 , 353 , and 355 , or the likelihood thereof may be reduced.
- the organic layers 352 and 354 may also serve as a buffer layer to reduce stress among respective ones of the inorganic layers 351 , 353 and 355 , in addition to reducing (or preventing) moisture-infiltration. Further, because the organic layers 352 and 354 have planarization characteristics, an uppermost surface of the thin film encapsulation layer 350 may be planarized.
- the thin film encapsulation layer 350 may have a relatively small thickness of about 10 ⁇ m or less. Accordingly, the OLED display device 1010 may also have a relatively small thickness.
- the second substrate 212 may be omitted.
- the flexible characteristics of the OLED display device 1010 are improved.
- the adhesive layer 295 is disposed on the thin film encapsulation layer 350 and the window 100 is disposed on the adhesive layer 295 .
- FIG. 15 is a plan view illustrating a liquid crystal display (“LCD”) device 1011 according to an eleventh exemplary embodiment
- FIG. 16 is a cross-sectional view taken along the line II-II′ of FIG. 15 .
- LCD liquid crystal display
- the LCD device 1011 includes an LCD panel 400 and a window 100 on the LCD panel 400 .
- the LCD panel 400 includes a display substrate 410 , an opposing substrate 420 and a liquid crystal layer LC between the display substrate 410 and the opposing substrate 420 .
- the display substrate 410 includes a first substrate 401 and a gate line GL, a data line DL, a thin film transistor TFT, a gate insulating layer 421 , an insulating interlayer 431 , a first color filter 451 , a second color filter 452 , a planarization layer 491 , a pixel electrode PE and a light blocking portion 476 on the first substrate 401 .
- the gate line GL and a gate electrode GE extending from the gate line GL are disposed on the first substrate 401 .
- the gate insulating layer 421 is disposed on the gate line GL and the gate electrode GE. In some exemplary embodiments, the gate insulating layer 421 may be disposed over an entire surface of the first substrate 401 including the gate line GL and the gate electrode GE.
- the gate insulating layer 421 may include silicon nitride (SiNx), silicon oxide (SiOx), or the like.
- the gate insulating layer 421 may have a multi-layer structure including at least two insulating layers having different physical properties.
- a semiconductor layer SM is disposed on the gate insulating layer 421 .
- the semiconductor layer SM overlaps the gate electrode GE, a source electrode SE and a drain electrode DE.
- the semiconductor layer SM may include amorphous silicon, polycrystalline silicon, or the like.
- the semiconductor layer SM may include an oxide semiconductor material.
- An ohmic contact layer may be disposed on the semiconductor layer SM.
- the source electrode SE is disposed to partially overlap the semiconductor layer SM.
- the source electrode SE extends from the data line DL.
- the drain electrode DE is spaced apart from the source electrode SE and partially overlaps the semiconductor layer SM.
- the drain electrode DE is connected to the pixel electrode PE.
- the drain electrode DE and the source electrode SE may be formed concurrently (or substantially simultaneously) in a substantially same process.
- the thin film transistor TFT is defined by the gate electrode GE, the semiconductor layer SM, the source electrode SE and the drain electrode DE.
- a channel area of the thin film transistor TFT is positioned at a portion of the semiconductor layer SM between the source electrode SE and the drain electrode DE.
- the data line DL is disposed on the gate insulating layer 421 and crosses the gate line GL.
- the data line DL and the source electrode SE may be formed substantially simultaneously in a substantially same process.
- the semiconductor layer SM may be further provided between the gate insulating layer 421 and the source electrode SE and may be further provided between the gate insulating layer 421 and the drain electrode DE. In addition, the semiconductor layer SM may be further provided between the gate insulating layer 421 and the data line DL.
- the insulating interlayer 431 is disposed on the data line DL, the source electrode SE, the drain electrode DE, the semiconductor layer SM and the gate insulating layer 421 .
- the insulating interlayer 431 may be disposed over an entire surface of the first substrate 401 including the data line DL, the source electrode SE, the drain electrode DE and the gate insulating layer 421 .
- the insulating interlayer 431 has a drain contact hole (or a drain contact opening) 432 .
- the insulating interlayer 431 may include an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), or may include an organic layer.
- the insulating interlayer 431 may have a bilayer structure including a lower inorganic layer and an upper organic layer.
- the first color filter 451 and the second color filter 452 are disposed on the insulating interlayer 431 . Edges of the first and second color filters 451 and 452 may be positioned on the gate line GL, the thin film transistor TFT and the data line DL. Edges of adjacent ones of the first and second color filters 451 and 452 may overlap each other. Each of the first and second color filters 451 and 452 has an opening defined to correspond to the drain electrode DE. Each of the first and second color filters 451 and 452 may include a photosensitive organic material.
- the first color filter 451 and the second color filter 452 have different colors and may each be one of a red color filter, a green color filter, a blue color filter, a cyan color filter, a magenta color filter, a yellow color filter and a white color filter.
- the LCD device 1011 according to the eleventh exemplary embodiment may further include a third color filter.
- the third color filter has a color different from those of the first color filter 451 and the second color filter 452 and may be one of a red color filter, a green color filter, a blue color filter, a cyan color filter, a magenta color filter and a yellow color filter.
- the eleventh exemplary embodiment is not limited thereto and the first and second color filters 451 and 452 may be disposed on a second substrate 402 , for example.
- the planarization layer 491 is disposed on the first and second color filters 451 and 452 .
- the planarization layer 491 may be disposed over an entire surface of the first substrate 401 including the first and second color filters 451 and 452 and the insulating interlayer 431 .
- the planarization layer 491 may have an opening defined to correspond to the drain contact hole 432 .
- the planarization layer 491 functions as a protective layer and planarizes a portion below the pixel electrode PE.
- the planarization layer 491 may be referred to as a protective layer.
- the planarization layer 491 may include an organic material, for example, a photosensitive organic material and/or a photosensitive resin composition. In some exemplary embodiments, the planarization layer 491 may be also referred to as an organic layer.
- the pixel electrode PE is connected to the drain electrode DE through the drain contact hole 432 .
- the pixel electrode PE is disposed on the planarization layer 491 . A part of an edge of the pixel electrode PE may overlap the light blocking portion 476 .
- the light blocking portion 476 is disposed on the pixel electrode PE and the planarization layer 491 .
- the light blocking portion 476 overlaps the TFT, the gate lines GL and the data line DL to block light leakage.
- a column spacer 472 may be positioned on the light blocking portion 476 .
- the column spacer 472 has a shape protruding from the light blocking portion 476 toward the opposing substrate 420 to a predetermined height.
- the column spacer 472 maintains a cell gap between the display substrate 410 and the opposing substrate 420 .
- the column spacer 472 and the light blocking portion 476 may be unitary (e.g., in a monolithic structure). In some exemplary embodiments, the column spacer 472 and the light blocking portion 476 may be concurrently (or substantially simultaneously) manufactured using a substantially the same material. The column spacer 472 and the light blocking portion 476 may be collectively referred to as a black column spacer (BCS).
- BCS black column spacer
- the opposing substrate 420 includes the second substrate 402 and a common electrode CE on the second substrate 402 .
- the liquid crystal layer LC is disposed between the display substrate 410 and the opposing substrate 420 .
- An adhesive layer 295 is disposed on the LCD panel 400 including the display substrate 410 , the liquid crystal layer LC and the opposing substrate 420 , and the window 100 is disposed on the adhesive layer 295 .
- One of the plastic substrates 101 , 102 , 103 , 104 , 105 , 106 , 107 and 108 according to the first, second, third, fourth, fifth, sixth, seventh and eighth exemplary embodiments may be utilized as the window 100 .
- the first organic-inorganic hybrid layer 121 of the plastic substrates 101 , 102 , 103 , 104 , 105 , 106 , 107 and 108 according to the first, second, third, fourth, fifth, sixth, seventh and eighth exemplary embodiments is positioned on the opposite side from the LCD panel 400 .
- the plastic substrate has excellent hardness and abrasion resistance. Accordingly, the plastic substrate may be utilized as a window for display devices.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Human Computer Interaction (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
- This application claims priority to and the benefit of Korean Patent Application No. 10-2016-0087605, filed on Jul. 11, 2016, in the Korean Intellectual Property Office (KIPO), the disclosure of which is incorporated by reference herein in its entirety.
- Embodiments of the present invention relate to a plastic substrate having improved hardness, a method of manufacturing the plastic substrate having improved hardness and a display device including the plastic substrate having improved hardness.
- With the recent development of mobile devices, such as smart phones and tablet PCs, thinner and slimmer display devices are desired.
- A display device includes a window for protecting a display surface. In general, the window may include glass or tempered glass with good mechanical properties. However, because glass is heavy and prone to breakage by impact, materials that may replace glass are being studied.
- Plastic materials may be a suitable substitute for glass. Plastic materials have the characteristic of being lightweight and not easily broken. However, plastic materials generally have lower hardness and lower abrasion resistance than glass.
- It is to be understood that this background of the technology section is intended to provide useful background information for understanding the technology disclosed herein. As such, the technology background section disclosed herein may include ideas, concepts or recognitions that were not part of what was known or appreciated by those skilled in the pertinent art prior to the effective filing date of the subject matter disclosed herein.
- One or more embodiments of the present invention are directed to a plastic substrate having excellent hardness and abrasion resistance and a method of manufacturing the plastic substrate.
- Further, one or more embodiments of the present invention are directed to a display device including the plastic substrate having excellent hardness and abrasion resistance.
- According to an exemplary embodiment, a plastic substrate includes: a plastic support member having light transmittance; and a first organic-inorganic hybrid layer on the plastic support member. The first organic-inorganic hybrid layer includes; a first organic-inorganic hybrid matrix; and ions implanted into the first organic-inorganic hybrid matrix at an a side opposite to a side adjacent the plastic support member. An amount of the ions per unit area (an ion amount) is in a range from about 2×1013/cm2 to about 2×1014/cm2.
- An implantation depth of the ions may be in a range from about 300 nm to about 400 nm.
- The ions may be implanted at an energy in a range from about 60 keV to about 80 keV.
- The ions may include at least one of a boron (B) ion and a nitrogen (N) ion.
- The first organic-inorganic hybrid matrix may include a silicone resin and a polymer resin.
- The first organic-inorganic hybrid layer may have a thickness ranging from about 2 μm to about 20 μm.
- The plastic support member may include at least one selected from the group consisting of: a polycarbonate (PC) film, a polyacrylic film, a polymethyl methacrylate (PMMA) film, a polyimide (PI) film, a polyethylene (PET) film, a polypropylene (PP) film, a polystyrene (PS) film, a polyamide (PA) film, a polyacetal (POM) film, a polybutylene terephthalate (PBT) film, a cellulose film and an acrylic-polycarbonate copolymer alloy film.
- The plastic substrate may further include a first inorganic layer between the plastic support member and the first organic-inorganic hybrid layer.
- The plastic substrate may further include a second organic-inorganic hybrid layer between the plastic support member and the first inorganic layer.
- The plastic substrate may further include a first organic layer between the plastic support member and the first organic-inorganic hybrid layer.
- According to another exemplary embodiment, a method of manufacturing a plastic substrate includes: forming a first organic-inorganic hybrid matrix on a plastic support member, the plastic support member having light transmittance; and implanting ions into the first organic-inorganic hybrid matrix. An amount of the ions per unit area (an ion amount) is in a range from about 2×1013/cm2 to about 2×1014/cm2.
- An implantation depth of the ions may be in a range from about 300 nm to about 400 nm.
- The ions may be implanted at an energy in a range from about 60 keV to about 80 keV.
- The ions may include at least one of a boron (B) ion and a nitrogen (N) ion.
- According to another exemplary embodiment, a display device includes: a display panel; and a window on the display panel. The window includes: a plastic support member having light transmittance; and a first organic-inorganic hybrid layer on the plastic support member, the first organic-inorganic hybrid layer including ions implanted at a side an opposite to a side adjacent the plastic support member. An amount of the ions per unit area (an ion amount) is in a range from about 2×1013/cm2 to about 2×1014/cm2.
- The foregoing is illustrative only and is not intended to be in any way limiting. In addition to the illustrative aspects, exemplary embodiments, and features described above, further aspects, exemplary embodiments, and features will become apparent by reference to the drawings and the following detailed description.
- A more complete appreciation of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the accompanying drawings, wherein:
-
FIG. 1 is a cross-sectional view illustrating a plastic substrate according to a first exemplary embodiment; -
FIG. 2 is a cross-sectional view illustrating a plastic substrate according to a second exemplary embodiment; -
FIG. 3 is a cross-sectional view illustrating a plastic substrate according to a third exemplary embodiment; -
FIG. 4 is a cross-sectional view illustrating a plastic substrate according to a fourth exemplary embodiment; -
FIG. 5 is a cross-sectional view illustrating a plastic substrate according to a fifth exemplary embodiment; -
FIG. 6 is a cross-sectional view illustrating a plastic substrate according to a sixth exemplary embodiment; -
FIG. 7 is a cross-sectional view illustrating a plastic substrate according to a seventh exemplary embodiment; -
FIG. 8 is a cross-sectional view illustrating a plastic substrate according to an eighth exemplary embodiment; -
FIG. 9 is a chart illustrating results of a scratch resistance evaluation; -
FIG. 10 is a chart illustrating results of a vibration abrasion resistance evaluation; -
FIGS. 11A-11F are graphs illustrating ion intensity according to an ion implantation depth; -
FIG. 12 is a plan view illustrating an organic light emitting diode (“OLED”) display device according to a ninth exemplary embodiment; -
FIG. 13 is a cross-sectional view taken along the line I-I′ ofFIG. 12 ; -
FIG. 14 is a cross-sectional view illustrating an OLED display device according to a tenth exemplary embodiment; -
FIG. 15 is a plan view illustrating a liquid crystal display (“LCD”) device according to an eleventh exemplary embodiment; and -
FIG. 16 is a cross-sectional view taken along the line II-II′ ofFIG. 15 . - Exemplary embodiments are described more fully hereinafter with reference to the accompanying drawings. Although the invention may be modified in various manners and has several exemplary embodiments, some exemplary embodiments are illustrated in the accompanying drawings and will be mainly described in the specification. These embodiments are provided as examples so that this disclosure will be thorough and complete, and will fully convey the aspects and features of the present invention to those skilled in the art. Accordingly, processes, elements, and techniques that are not necessary to those having ordinary skill in the art for a complete understanding of the aspects and features of the present invention may not be described.
- In the drawings, relative sizes, thicknesses, etc. of layers, elements, regions, and areas may be illustrated in an enlarged manner for clarity and ease of description thereof. When a layer, area, or plate is referred to as being “on” another layer, area, or plate, it may be directly on the other layer, area, or plate, or intervening layers, areas, or plates may be present therebetween. Conversely, when a layer, area, or plate is referred to as being “directly on” another layer, area, or plate, intervening layers, areas, or plates may be absent therebetween. Further when a layer, area, or plate is referred to as being “below” another layer, area, or plate, it may be directly below the other layer, area, or plate, or intervening layers, areas, or plates may be present therebetween. Conversely, when a layer, area, or plate is referred to as being “directly below” another layer, area, or plate, intervening layers, areas, or plates may be absent therebetween.
- The spatially relative terms “below”, “beneath”, “less”, “above”, “upper” and the like, may be used herein for ease of description to describe the relations between one element or component and another element or component as illustrated in the drawings. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation depicted in the drawings. For example, in the case where a device illustrated in the drawing is turned over, the device positioned “below” or “beneath” another device may be placed “above” another device. Accordingly, the illustrative term “below” may include both the lower and upper positions. The device may also be oriented in the other direction and thus the spatially relative terms may be interpreted differently depending on the orientations.
- Throughout the specification, when an element is referred to as being “connected” to another element, the element is “directly connected” to the other element, or “electrically connected” to the other element with one or more intervening elements interposed therebetween.
- The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting of the present invention. As used herein, the singular forms “a” and “an” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes” and/or “including,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groups thereof. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.
- It will be understood that, although the terms “first,” “second,” “third,” and the like may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, “a first element” discussed below could be termed “a second element” or “a third element,” and “a second element” and “a third element” may be termed likewise without departing from the teachings herein.
- “About” or “approximately” as used herein is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within ±30%, 20%, 10%, 5%, etc. of the stated value.
- Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those skilled in the art to which this invention pertains. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an ideal or excessively formal sense unless clearly defined in the present specification.
- Further, the use of “may” when describing embodiments of the present invention refers to “one or more embodiments of the present invention.” In addition, the use of alternative language, such as “or,” when describing embodiments of the present invention, refers to “one or more embodiments of the present invention” for each corresponding item listed. As used herein, the terms “use,” “using,” and “used” may be considered synonymous with the terms “utilize,” “utilizing,” and “utilized,” respectively. Also, the term “exemplary” is intended to refer to an example or illustration.
- Also, any numerical range disclosed and/or recited herein is intended to include all sub-ranges of the same numerical precision subsumed within the recited range. For example, a range of “1.0 to 10.0” is intended to include all subranges between (and including) the recited minimum value of 1.0 and the recited maximum value of 10.0, that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limitation recited herein is intended to include all lower numerical limitations subsumed therein, and any minimum numerical limitation recited in this specification is intended to include all higher numerical limitations subsumed therein. Accordingly, Applicant reserves the right to amend this specification, including the claims, to expressly recite any sub-range subsumed within the ranges expressly recited herein. All such ranges are intended to be inherently described in this specification such that amending to expressly recite any such subranges would comply with the requirements of 35 U.S.C. §112(a) and 35 U.S.C. §132(a).
- Some of the parts which are not associated with the description may not be provided in order to specifically describe embodiments of the present invention and like reference numerals refer to like elements throughout the specification.
- Hereinafter, a first exemplary embodiment is described with reference to
FIG. 1 . -
FIG. 1 is a cross-sectional view illustrating aplastic substrate 101 according to a first exemplary embodiment. - The
plastic substrate 101 according to the first exemplary embodiment includes aplastic support member 110 having light transmittance and a first organic-inorganic hybrid layer 121 on theplastic support member 110. - A plastic film having light transmittance may be utilized as the
plastic support member 110. For example, a polycarbonate (PC) film, a polyacrylic film, a polymethyl methacrylate (PMMA) film, a polyimide (PI) film, a polyethylene (PET) film, a polypropylene (PP) film, a polystyrene (PS) film, a polyamide (PA) film, a polyacetal (POM) film, a polybutylene terephthalate (PBT) film, a cellulose film and/or an acrylic-polycarbonate copolymer alloy film may be utilized as theplastic support member 110. - For example, a film including a copolymer of PC and PMMA may be used as the
plastic support member 110. The copolymer of PC and PMMA may include PC in an amount ranging from about 50 percent by weight (wt %) to about 70 wt % and PMMA in an amount ranging from about 30 wt % to about 50 wt %. For example, a film including a copolymer of PC and PMMA in a weight ratio of 6:4 may be utilized as theplastic support member 110. - The
plastic support member 110 may have a thickness ranging from about 400 μm to about 1000 μm. When the thickness of theplastic support member 110 is less than about 400 μm, the supporting strength may be relatively weak (or weakened), and when the thickness is greater than about 1000 μm, it is disadvantageous for slimming down the device (or the device may be relatively thick). - The first organic-
inorganic hybrid layer 121 may include a first organic-inorganic hybrid matrix 120 and anion 150 implanted into the first organic-inorganic hybrid matrix 120. - The first organic-
inorganic hybrid matrix 120 may include a polymer resin and a silicone resin. - The polymer resin may include at least one of an acrylic resin, a urethane resin and/or a urethane-acrylate resin. For example, a urethane-acrylate copolymer resin may be utilized as the polymer resin. However, the polymer resin is not limited thereto.
- The silicone resin may include at least one of a monomer represented by the following Chemical Formula 1 and a monomer represented by the following Chemical Formula 2. For example, the silicone resin may be formed by polymerization of a composition including at least one of the monomer represented by the following Chemical Formula 1 and the monomer represented by the following Chemical Formula 2.
- In Chemical Formula 1, respective ones of R21, R22, R23 and R24 are one of an amino group, an epoxy group, a phenyl group, an acryl group and/or a vinyl group, and respective ones of R25 and R26 are hydrogen (H) and/or a hydrocarbon group having 1 to 6 carbon atoms.
- For example, the first organic-
inorganic hybrid matrix 120 may be formed by polymerization of a polymerizable composition including a polymer resin-forming monomer and/or a silicone resin-forming monomer. - The first organic-
inorganic hybrid layer 121 has a thickness ranging from about 2 μm to about 20 μm. - When the thickness of the first organic-
inorganic hybrid layer 121 is less than about 2 μm, the first organic-inorganic hybrid layer 121 may not have sufficient strength and ion implantation may be difficult (or may not be easy). In addition, when the thickness of the first organic-inorganic hybrid layer 121 is greater than about 20 μm, it is disadvantageous for slimming down the device (or the device may be relatively thick). - The
ions 150 may be implanted at (or on) a side of the first organic-inorganic hybrid matrix 120 that is opposite to theplastic support member 110. For example, theions 150 may be implanted through asurface 120 a of the first organic-inorganic hybrid matrix 120 at (or on) an opposite side from theplastic support member 110. - An amount (or quantity) of
ions 150 implanted into the first organic-inorganic hybrid matrix 120 may range from about 2×1013/cm2 to about 2×1014/cm2. The amount ofions 150 is expressed by the number of ions per unit area (cm2). Hereinafter, an amount ofions 150 per unit area is referred to as an “ion amount”. - When the ion amount is less than about 2×1013/cm2, the hardness and strength of the first organic-
inorganic hybrid layer 121 may be relatively low (or lower than desired). In addition, when the ion amount exceeds about 2×1014/cm2, yellow shift, i.e., a color shift toward yellow, may occur. - The
ions 150 implanted into the first organic-inorganic hybrid matrix 120 may include at least one of boron (B) ions and nitrogen (N) ions. The condition for boron (B) ion implantation and the condition for nitrogen (N) ion implantation may be different from each other. - An implantation depth of the
ions 150 may be in a range from about 300 nm to about 400 nm. The implantation depth of theions 150 is represented by a distance dl from thesurface 120 a. - According to the first exemplary embodiment, the ion amount of about 2×1013/cm2 or more is maintained from the
surface 120 a of the first organic-inorganic hybrid matrix 120 to a depth of about 300 nm to about 400 nm (or such that the distance dl is about 300 nm to about 400 nm). - When the implantation depth of the
ions 150 is less than about 300 nm, strength of the first organic-inorganic hybrid layer 121 may be insufficient (or relatively low). Further, when theions 150 should be implanted with high energy (or relatively high energy) in order to implantions 150 at an implantation depth of more than about 400 nm. In such an exemplary embodiment, the first organic-inorganic hybrid layer 121 may be damaged. - According to the first exemplary embodiment, the
ions 150 are implanted at an energy ranging from about 60 keV to about 80 keV. When the ion implantation energy is less than about 60 keV, an ion implantation efficiency is lowered. In addition, when the ion implantation energy exceeds about 80 keV, the first organic-inorganic hybrid layer 121 may be damaged during the ion implantation process. - The first organic-
inorganic hybrid layer 121 may further include fluorine (F) in an amount ranging from about 0.001 wt % to about 0.2 wt % with respect to the total weight of the first organic-inorganic hybrid layer 121. In addition, an anti-finger layer may be provided on the first organic-inorganic hybrid layer 121. - A second exemplary embodiment is described below with reference to
FIG. 2 . Hereinafter, in order to avoid duplication, descriptions of components that are the same or substantially the same as those described above may be omitted. -
FIG. 2 is a cross-sectional view illustrating aplastic substrate 102 according to the second exemplary embodiment. - The
plastic substrate 102 according to the second exemplary embodiment includes aplastic support member 110, a firstinorganic layer 131 on theplastic support member 110 and a first organic-inorganic hybrid layer 121 on the firstinorganic layer 131. - The kind of the first
inorganic layer 131 is not particularly limited. For example, the firstinorganic layer 131 may include a layer including an inorganic material. - The first
inorganic layer 131 may include, for example, a silicone resin. In addition, the firstinorganic layer 131 may include a polymer resin and inorganic particles dispersed in the polymer resin. For example, the firstinorganic layer 131 may include a polymer resin and silicon oxide (SiOx) dispersed in the polymer resin. - When the first
inorganic layer 131 includes a polymer connection group, theplastic support member 110 and the firstinorganic layer 131 may have a strong bonding force. - The first
inorganic layer 131 may have a thickness ranging from about 3 μm to about 10 μm. When the thickness of the firstinorganic layer 131 is less than about 3 μm, the strength of theplastic substrate 102 may be relatively weak (or weakened). In addition, when the thickness of the firstinorganic layer 131 is greater than about 10 μm, it may be disadvantageous to slim down the device (or the device may be relatively thick). - Hereinafter, a third exemplary embodiment is described with reference to
FIG. 3 . -
FIG. 3 is a cross-sectional view illustrating aplastic substrate 103 according to the third exemplary embodiment. - The
plastic substrate 103 according to the third exemplary embodiment includes aplastic support member 110, a firstorganic layer 141 on theplastic support member 110 and a first organic-inorganic hybrid layer 121 on the firstorganic layer 141. - The kind of the first
organic layer 141 is not particularly limited. For example, the firstorganic layer 141 may include at least one of an acrylic resin, a urethane resin and a urethane-acrylate resin. The firstorganic layer 141 may be formed by curing a coating solution for forming an organic layer. - The first
organic layer 141 may serve as a buffer for stress generated between layers. - The first
organic layer 141 may have a thickness ranging from about 5 μm to about 10 μm. When the thickness of the firstorganic layer 141 is less than about 5 μm, an interlayer buffer effect may be reduced. When the thickness is greater than about 10 μm, it may be disadvantageous to slim down the device (or the device may be relatively thick). - Hereinafter, a fourth exemplary embodiment is described with reference to
FIG. 4 . -
FIG. 4 is a cross-sectional view illustrating aplastic substrate 104 according to the fourth exemplary embodiment. - The
plastic substrate 104 according to the fourth exemplary embodiment includes aplastic support member 110, a second organic-inorganic hybrid layer 122 on theplastic support member 110, a firstinorganic layer 131 on the second organic-inorganic hybrid layer 122 and a first organic-inorganic hybrid layer 121 on the firstinorganic layer 131. - According to the fourth exemplary embodiment,
ions 150 are not implanted into the second organic-inorganic hybrid layer 122. The second organic-inorganic hybrid layer 122 may have a composition that is substantially the same as that of a first organic-inorganic hybrid matrix 120 (see, e.g.,FIG. 1 ). - Hereinafter, a fifth exemplary embodiment is described with reference to
FIG. 5 . -
FIG. 5 is a cross-sectional view illustrating aplastic substrate 105 according to the fifth exemplary embodiment. - The
plastic substrate 105 according to the fifth exemplary embodiment includes aplastic support member 110, a first organic-inorganic hybrid layer 121 on theplastic support member 110 and a third organic-inorganic hybrid layer 123 on an opposite surface (or opposite side) of theplastic support member 110 from the first organic-inorganic hybrid layer 121. - For example, the first organic-
inorganic hybrid layer 121 may be on (or at) a first surface of theplastic support member 110 and the third organic-inorganic hybrid layer 123 may be on (or at) a second surface of theplastic support member 110. The first surface of theplastic support member 110 may be opposite to the second surface of theplastic support member 110. - According to the fifth exemplary embodiment,
ions 150 are not implanted into the third organic-inorganic hybrid layer 123. The third organic-inorganic hybrid layer 123 may have a composition that is substantially the same as that of the first organic-inorganic hybrid matrix 120. - Hereinafter, a sixth exemplary embodiment is described with reference to
FIG. 6 . -
FIG. 6 is a cross-sectional view illustrating aplastic substrate 106 according to the sixth exemplary embodiment. - The
plastic substrate 106 according to the sixth exemplary embodiment includes aplastic support member 110, a firstinorganic layer 131 on (or at) a surface (or a first surface) of theplastic support member 110, a first organic-inorganic hybrid layer 121 on the firstinorganic layer 131, a secondinorganic layer 132 on (or at) another surface (or a second surface) of theplastic support member 110 and a third organic-inorganic hybrid layer 123 on the secondinorganic layer 132. - The second
inorganic layer 132 may have a composition that is substantially the same as that of the firstinorganic layer 131. - Hereinafter, a seventh exemplary embodiment will be described with reference to
FIG. 7 . -
FIG. 7 is a cross-sectional view illustrating aplastic substrate 107 according to the seventh exemplary embodiment. - The
plastic substrate 107 according to the seventh exemplary embodiment includes aplastic support member 110, a firstorganic layer 141 on (or at) a surface (or a first surface) of theplastic support member 110, a first organic-inorganic hybrid layer 121 on the firstorganic layer 141, a secondorganic layer 142 on (or at) another surface (or a second surface opposite to the first surface) of theplastic support member 110 and a third organic-inorganic hybrid layer 123 on the secondorganic layer 142. - The second
organic layer 142 may have a composition that is substantially the same as that of the firstorganic layer 141. - Hereinafter, an eighth exemplary embodiment is described below with reference to
FIG. 8 . -
FIG. 8 is a cross-sectional view illustrating aplastic substrate 108 according to the eighth exemplary embodiment. - The
plastic substrate 108 according to the eighth exemplary embodiment includes aplastic support member 110, a second organic-inorganic hybrid layer 122 on (or at) a surface (or a first surface) of theplastic support member 110, a firstinorganic layer 131 on the second organic-inorganic hybrid layer 122, a first organic-inorganic hybrid layer 121 on the firstinorganic layer 131, a fourth organic-inorganic hybrid layer 124 on (or at) another surface (or a second surface opposite to the first surface) of theplastic support member 110, a secondinorganic layer 132 on the fourth organic-inorganic hybrid layer 124 and a third organic-inorganic hybrid layer 123 on the secondinorganic layer 132. - The second organic-
inorganic hybrid layer 122, the third organic-inorganic hybrid layer 123 and the fourth organic-inorganic hybrid layer 124 may each have substantially the same composition. - A method of manufacturing a plastic substrate according to an exemplary embodiment includes forming the first organic-
inorganic hybrid matrix 120 on theplastic support member 110 having light transmitting characteristics and implantingions 150 into the first organic-inorganic hybrid matrix 120. - Hereinafter, a method of manufacturing the
plastic substrate 105 according to the fifth exemplary embodiment by a dip coating method is described. - According to some embodiments, in order to manufacture the
plastic substrate 105, first, theplastic support member 110 is immersed in a coating solution for forming the organic-inorganic hybrid matrix such that a coating layer is formed on each of opposite sides of the plastic support member 110 (e.g., on a first surface of theplastic support member 110 and on a second surface of the plastic support member 110). - The coating layer formed on the first surface of the
plastic support member 110 is cured and theions 150 are implanted therein to form the first organic-inorganic hybrid layer 121. In addition, the coating layer formed on the second surface of theplastic support member 110 is cured to form the third organic-inorganic hybrid layer 123. - The coating solution for forming the organic-inorganic hybrid matrix may include an organic binder component and a silicone monomer.
- The silicone monomer includes at least one of a monomer represented by the following Chemical Formula 1 and a monomer represented by the following Chemical Formula 2.
- In Chemical Formula 1, respective ones of R21, R22, R23 and R24 are one of an amino group, an epoxy group, a phenyl group, an acryl group and/or a vinyl group, and respective ones of R25 and R26 are hydrogen (H) and/or a hydrocarbon group having 1 to 6 carbon atoms.
- The organic binder component includes monomers, oligomers and/or photoinitiators. The organic binder component may include a monomer in an amount ranging from about 20 wt % to about 60 wt %, an oligomer in an amount ranging from about 20 wt % to about 60 wt %, a rubber-based flexible component in an amount ranging from about 10 wt % to about 50 wt % and a photoinitiator in an amount ranging from about 1 wt % to about 10 wt %, with respect to the total weight of the organic binder component.
- The monomer may include, for example, at least one of an acrylic monomer, a urethane monomer, and a urethane-acrylic monomer.
- The oligomer may use urethane (metha) acrylate having a weight average molecular weight (Mw) ranging from about 5,000 to about 50,000.
- When the weight average molecular weight (Mw) of the oligomer is more than about 50,000, opacity in a high temperature and high humidity environment may be unsuitable. When the weight average molecular weight (Mw) of the oligomer is less than about 5,000, the coating solution for forming an organic-inorganic hybrid layer may not be maintained in a solid state at room temperature.
- As an example, after the first and second
inorganic layers plastic support member 110, the first and third organic-inorganichybrid layers FIG. 6 ). - As another example, after the first and second
organic layers plastic support member 110, the first and third organic-inorganichybrid layers FIG. 7 ). - As another example, after the second and fourth organic-inorganic
hybrid layers plastic support member 110, the first and secondinorganic layers hybrid layers FIG. 8 ). - For evaluation of ion implantation characteristics, a sample having a structure that is substantially the same as that of the
plastic substrate 101 described above in reference to the first exemplary embodiment is produced. - For example, a polycarbonate film having a thickness of about 550 μm is utilized as the
plastic support member 110. The first organic-inorganic hybrid matrix 120 including a urethane acrylate resin (a polymer resin) in an amount of about 60 wt % and a silicone resin in an amount of about 40% is disposed on theplastic support member 110 to form each sample. - Next, boron (B) ions are implanted into the first organic-
inorganic hybrid matrix 120 of each sample according to the ion implantation conditions illustrated in Table 1 below to produce a plastic substrate. The evaluation results of the physical properties are illustrated in Table 1. -
TABLE 1 Ion implantation condition Ion Property Evaluation amount Pencil Transmittance Reflectance Chromaticity Sample No. Kind Energy (/cm2) hardness (%) (%) Appearance YI (b*) Reference — — — 7H 91.6 7.9 transparent 1.1 −0.4 Example 1 Sample 1 Boron 80 kev 1 × 1014 8H 92.1 8.1 transparent 1.5 −0.3 Sample 2 Boron 80 kev 2 × 1014 8H 90.7 8.4 discolored 3.2 −0.2 Sample 3 Boron 80 kev 3 × 1014 7~8H 90.2 8.5 discolored 4.6 0.1 Sample 4 Boron 80 kev 5 × 1014 8H~9H 89.4 8.6 discolored 9.2 1.0 Sample 5 Boron 80 kev 1 × 1015 9H 80.9 8.8 discolored 26.6 3.5 Sample 6 Boron 60 kev 1 × 1014 7~8H 92.0 8.2 transparent 1.4 −0.2 Sample 7 Boron 60 kev 2 × 1014 7~8H 90.4 8.5 transparent 2.8 0.1 Sample 8 Boron 60 kev 3 × 1014 8H 90.3 8.6 discolored 3.7 0.6 Sample 9 Boron 60 kev 5 × 1014 8H 90.0 8.8 discolored 6.3 1.2 Sample 10Boron 60 kev 1 × 1015 8~9H 86.1 9.1 discolored 15.2 2.9 - In Table 1, Reference Example 1 is a sample in which ion implantation is not performed.
- The evaluation methods of physical properties illustrated in Table 1 are as follows.
- The pencil hardness is evaluated in accordance with the pencil hardness test specified in JIS K 5600-5-4. For example, the pencil hardness is measured five times on the sample with respect to a weight of 1 kg, and the smallest value is selected as a pencil hardness of the sample.
- In the pencil hardness, the reference marks “H,” “F” and “B,” initials of “hard,” “firm,” and “black,” respectively, represent hardness and concentration. As a number of an “H” lead or a “B” lead increases, the “H” lead becomes harder, whereas the “B” lead becomes smoother. That is, “9H” denotes a highest hardness, and the hardness decreases in the following order: 8H, 7H, 6H, 5H, 4H, 3H, 2H, H, F, B, 2B, 3B, 4B, 5B, 6B, 7B, 8B and 9B.
- For evaluation of the optical characteristics, transmittance and reflectance are measured using a spectrophotometer (exemplary device name: “COH-400”).
- For appearance evaluation, discoloration of the sample is visually identified. For example, it is evaluated whether or not the yellow shift is observed in the sample.
- The reference mark “YI” indicates a yellow index. The larger the YI value is, the larger the yellow shift.
- The chromaticity (b*) represents the yellow shift according to the CIE 1976(L*,a*,b*) color coordinates. Herein, a positive value of 1b* corresponds to the degree of yellow shift and a negative value of 1b* corresponds to the degree of blue shift.
- Referring to Table 1, in particular, Sample 1, Sample 6 and Sample 7 are evaluated to have excellent physical properties.
- In addition, nitrogen (N) ions are implanted into the first organic-
inorganic hybrid matrix 120 of each sample according to the ion implantation conditions illustrated in Table 2 below to produce a plastic substrate. The evaluation results of the physical properties are illustrated in Table 2. -
TABLE 2 Ion implantation condition Ion Property Evaluation amount Pencil Transmittance Reflectance Chromaticity Sample No. Kind Energy (/cm2) hardness (%) (%) Appearance YI (b*) Reference — — — 5H 91.8 8.0 transparent 0.8 −0.3 Example 2 Sample 11 Nitrogen 80 kev 1 × 1013 5H 92.0 7.9 transparent 0.7 0.2 Sample 12 Nitrogen 80 kev 2 × 1013 6H 91.4 8.4 transparent 1.1 0.1 Sample 13 Nitrogen 80 kev 5 × 1013 5H 89.7 8.4 transparent 2.5 1.1 Sample 14 Nitrogen 80 kev 1 × 1014 5H 86.0 8.8 discolored 4.4 2.5 Sample 15 Nitrogen 80 kev 2 × 1014 5H 85.5 10.0 discolored 9.0 4.6 Sample 16 Nitrogen 60 kev 1 × 1013 6H 92.0 7.8 transparent 0.5 −0.2 Sample 17 Nitrogen 60 kev 2 × 1013 4H 91.6 8.1 transparent 0.8 −0.3 Sample 18 Nitrogen 60 kev 5 × 1013 6H 91.3 8.4 transparent 1.1 0.5 Sample 19 Nitrogen 60 kev 3 × 1014 5H 80.0 9.8 discolored 11.6 10.1 - Referring to Table 2, Samples 12, 16, 17 and 18 are evaluated to have excellent physical properties.
-
FIG. 9 shows the results of a scratch resistance evaluation. - For scratch resistance evaluation, scratch resistance evaluation using a steel wool is performed. The scratch resistance evaluation method using a steel wool is as follows. A sample having a size of 200 mm×200 mm is manufactured using a plastic substrate. In addition, a cylinder having a diameter of about 25 mm and a flat surface having a steel wool #0000 uniformly attached thereto is prepared. Subsequently, a surface of the sample is rubbed back and forth six hundred times with the flat surface of the cylinder having the steel wool #0000 thereon, with a weight of about 1.0 kg at a speed of about 100 mm a second, and the depth and width of scratches generated on the surface of the sample are measured. The scratch resistance evaluation results for Reference Example 1 and Samples 1, 6 and 9 are shown in
FIG. 9 . - Referring to
FIG. 9 , samples 6 and 9 have particularly excellent scratch resistance. -
FIG. 10 shows the results of a vibration abrasion resistance evaluation. - For evaluating vibration abrasion resistance, a commercially available vibration abrasion tester (e.g., a Rösler vibration abrasion tester) is utilized. Vibration and abrasion are applied to the sample by using the vibration abrasion tester. The abrasion resistance is evaluated by the ratio of abrasion resistance of samples to glass over time.
FIG. 10 shows results of vibration abrasion resistance evaluation for Samples 1, 4, 6 and 9. - Referring to
FIG. 10 , Samples 1 and 9 have excellent abrasion resistance. - Referring to Tables 1 and 2 and
FIGS. 9 and 10 , when the ion amount is in a range from about 2×1013/cm2 to about 2×1014/cm2 and the ion implantation energy is in a range from about 60 keV to about 80 keV, the sample is evaluated to have excellent physical properties. -
FIGS. 11A, 11B, 11C, 11D, 11E and 11F are graphs illustrating ion intensity depending on an ion implantation depth. - For example,
FIGS. 11A, 11B, 11C, 11D, 11E and 11F illustrate the ion intensity (c/s) depending on the ion implantation depth (nm) whenions 150 are implanted into the first organic-inorganic hybrid matrix 120. -
FIG. 11A shows the ion intensity depending on the ion implantation depth whenions 150 of about 1.0×1014/cm2 are implanted with an energy of about 80 keV,FIG. 11B shows the ion intensity depending on the ion implantation depth whenions 150 of about 5.0×1014/cm2 are implanted with an energy of about 80 keV,FIG. 11C shows the ion intensity depending on the ion implantation depth whenions 150 of about 1.0×1015/cm2 are implanted with an energy of about 80 keV,FIG. 11D shows the ion intensity depending on the ion implantation depth whenions 150 of about 1.0×1014/cm2 are implanted with an energy of about 60 keV,FIG. 11E shows the ion intensity depending on the ion implantation depth whenions 150 of about 5.0×1014/cm2 are implanted with an energy of about 60 keV, andFIG. 11F shows the ion intensity depending on the ion implantation depth whenions 150 of about 1.0×1015/cm2 are implanted with an energy of about 60 keV. - The samples according to
FIGS. 11A, 11B, 11C, 11D, 11E and 11F are referred to as Test Examples 1, 2, 3, 4, 5 and 6, respectively. For each test example, the ion intensity depending on the ion implantation depth was measured twice. - The arrow illustrated in
FIGS. 11A, 11B, 11C, 11D, 11E and 11F indicates a critical point of ion intensity. The depth at the critical point of ion intensity is referred to as the ion implantation depth. - The results of
FIGS. 11A, 11B, 11C, 11D, 11E and 11F may be summarized in Table 3 below. -
TABLE 3 Ion Ion Implantation Implantation amount Critical point Intensity Test example energy (/cm2) (nm) (c/s) 1 80 keV 1.0 × 1014 380 19 (FIG. 11A) 365 18 2 80 keV 5.0 × 1014 360 67 (FIG. 11B) 335 65 3 80 keV 1.0 × 1015 380 116 (FIG. 11C) 385 112 4 60 keV 1.0 × 1014 330 33 (FIG. 11D) 315 21 5 60 keV 5.0 × 1014 304 51 (FIG. 11E) 330 65 6 60 keV 1.0 × 1015 300 156 (FIG. 11F) 300 143 - Referring to
FIGS. 11A, 11B, 11C, 11D, 11E and 11F , whenions 150 are implanted at an energy ranging from about 60 keV to about 80 keV,ions 150 are implanted to a depth ranging from about 300 nm to about 400 nm. - Hereinafter, an organic light emitting diode (“OLED”)
display device 109 according to a ninth exemplary embodiment is described with reference toFIGS. 12 and 13 .FIG. 12 is a plan view illustrating anOLED display device 109 according to the ninth exemplary embodiment, andFIG. 13 is a cross-sectional view taken along the line I-I′ ofFIG. 12 . - The
OLED display device 109 according to the ninth exemplary embodiment includes adisplay panel 210 and awindow 100 on thedisplay panel 210. - The
display panel 210 of theOLED display device 109 according to the ninth exemplary embodiment includes afirst substrate 211, a drivingcircuit unit 230 and anOLED 310. - The
first substrate 211 may include an insulating material such as glass, quartz, ceramic, plastic, or the like. Further, a polymer film may be utilized for thefirst substrate 211. - A
buffer layer 221 is disposed on thefirst substrate 211. Thebuffer layer 221 may include one or more layers selected from various inorganic layers and organic layers. Thebuffer layer 221 may be omitted. - The driving
circuit unit 230 is disposed on thebuffer layer 221. The drivingcircuit unit 230 includes a plurality of thin film transistors (“TFTs”) (e.g., a switchingTFT 10 and a driving TFT 20) and drives theOLED 310. For example, theOLED 310 emits light in accordance with a driving signal received from the drivingcircuit unit 230 to display an image. -
FIGS. 12 and 13 illustrate an active matrix-type organic light emitting diode (AMOLED)display device 109 having a 2Tr-1Cap structure. For example, the 2Tr-1Cap structure may include two TFTs, e.g., the switchingTFT 10 and the drivingTFT 20 and onecapacitor 80 in each pixel, but exemplary embodiments are not limited thereto. For example, theOLED display device 109 may include three or more TFTs and two or more capacitors in each pixel and may further include additional wirings. Herein, the term “pixel” refers to a smallest unit for displaying an image and theOLED display device 109 displays an image using a plurality of pixels. - Each pixel PX includes the switching
TFT 10, the drivingTFT 20, thecapacitor 80 and theOLED 310. In addition, agate line 251 extending along one direction (or a first direction) and adata line 271 and acommon power line 272 insulated from and intersecting thegate line 251 are also provided at the drivingcircuit unit 230. Each pixel PX may be defined by thegate line 251, thedata line 271 and thecommon power line 272 as a boundary, but exemplary embodiments are not limited thereto. For example, the pixels PX may be defined by a pixel defining layer and/or a black matrix. - The
OLED 310 includes afirst electrode 311, alight emitting layer 312 on thefirst electrode 311 and asecond electrode 313 on thelight emitting layer 312. Thelight emitting layer 312 includes a low molecular organic material or a high molecular organic material. Holes and electrons are injected into thelight emitting layer 312 from thefirst electrode 311 and thesecond electrode 313, respectively, and combined therein to form an exciton. TheOLED 310 emits light when the exciton falls from an excited state to a ground state. - The
capacitor 80 includes a pair of capacitor plates (i.e.,capacitor plates 258 and 278), having an insulatinginterlayer 245 interposed therebetween. In some embodiments, the insulatinginterlayer 245 may be a dielectric element. A capacitance of thecapacitor 80 is determined by electric charges accumulated in thecapacitor 80 and a voltage across the pair of capacitor plates (i.e.,capacitor plates 258 and 278). - The switching
TFT 10 includes a switchingsemiconductor layer 231, a switchinggate electrode 252, a switchingsource electrode 273 and aswitching drain electrode 274. The drivingTFT 20 includes a drivingsemiconductor layer 232, a drivinggate electrode 255, a drivingsource electrode 276 and a drivingdrain electrode 277. Agate insulating layer 241 is further provided to insulate the switchingsemiconductor layer 231 and the switchinggate electrode 252 and to insulate the drivingsemiconductor layer 232 and the drivinggate electrode 255. - The switching
TFT 10 may function as a switching element which selects a pixel to perform light emission. The switchinggate electrode 252 is connected to thegate line 251 and theswitching source electrode 273 is connected to thedata line 271. The switchingdrain electrode 274 is connected to one of the capacitor plates, e.g., thecapacitor plate 258, and is spaced apart from the switchingsource electrode 273. - The driving
TFT 20 applies a driving power, which allows thelight emitting layer 312 of theOLED 310 in a selected pixel to emit light, to thefirst electrode 311 which is a pixel electrode. The drivinggate electrode 255 is connected to thecapacitor plate 258 that is connected to theswitching drain electrode 274. Each of the drivingsource electrode 276 and the other of the capacitor plates, e.g., thecapacitor plate 278, is connected to thecommon power line 272. The drivingdrain electrode 277 is connected to thefirst electrode 311 of theOLED 310 through a contact hole (or a contact opening) defined in aplanarization layer 246. - With the above-described structure, the switching
TFT 10 is driven based on a gate voltage applied to thegate line 251 and serves to transmit a data voltage applied to thedata line 271 to the drivingTFT 20. A voltage equivalent to a difference between a common voltage applied to the drivingTFT 20 from thecommon power line 272 and the data voltage transmitted by (or from) the switchingTFT 10 is stored in thecapacitor 80 and a current corresponding to the voltage stored in thecapacitor 80 flows to theOLED 310 through the drivingTFT 20 such that theOLED 310 may emit light. - According to the ninth exemplary embodiment, the
first electrode 311 is a reflective electrode and thesecond electrode 313 is a semi-transmissive electrode. Accordingly, a light generated in thelight emitting layer 312 is emitted through thesecond electrode 313. - For example, the
first electrode 311 may include a reflective layer including one or more metals selected from: magnesium (Mg), silver (Ag), gold (Au), calcium (Ca), lithium (Li), chromium (Cr), copper (Cu) and aluminum (Al), and a transparent conductive layer on the reflective layer. The transparent conductive layer may include a transparent conductive oxide (TCO). Examples of the TCO may include: indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), aluminum zinc oxide (AZO), and/or indium oxide (In2O3). - In addition, the
first electrode 311 may have a triple-layer structure in which a transparent conductive layer, a reflective layer and a transparent conductive layer are sequentially stacked. - The
second electrode 313 may include a semi-transmissive layer including one or more metals selected from: magnesium (Mg), silver (Ag), gold (Au), calcium (Ca), lithium (Li), chromium (Cr), copper (Cu) and aluminum (Al). - In some embodiments, at least one of a hole injection layer (HIL) and a hole transport layer (HTL) may further be provided between the
first electrode 311 and thelight emitting layer 312 and at least one of an electron transport layer (ETL) and an electron injection layer (EIL) may further be provided between the light emittinglayer 312 and thesecond electrode 313. Thelight emitting layer 312, the hole injection layer (HIL), the hole transport layer (HTL), the electron transport layer (ETL) and the electron injection layer (EIL) may include an organic material and thus may be referred to as an organic layer. - A
pixel defining layer 290 is disposed on the drivingcircuit unit 230 and has an opening. Thefirst electrode 311, thelight emitting layer 312 and thesecond electrode 313 are sequentially stacked in the opening of thepixel defining layer 290. Thesecond electrode 313 is formed on thepixel defining layer 290 as well as thelight emitting layer 312. In an exemplary embodiment, the hole injection layer (HIL), the hole transport layer (HTL), the electron transport layer (ETL) and the electron injection layer (EIL) may also be disposed between thepixel defining layer 290 and thesecond electrode 313. TheOLED 310 generates light from thelight emitting layer 312 positioned in the opening of thepixel defining layer 290. For example, thepixel defining layer 290 may define a light emitting area. - A capping layer may be provided on the
second electrode 313, which protects theOLED 310 from an external environment. - A
second substrate 212 is disposed on thesecond electrode 313. Thesecond substrate 212 seals theOLED 310 together with thefirst substrate 211. Thesecond substrate 212, similar to thefirst substrate 211, may include an insulating material such as glass, quartz, ceramic, plastic, or the like. - A
buffer material 302 may be disposed between theOLED 310 and thesecond substrate 212. Thebuffer material 302 protects theOLED 310 and the like against an impact that may be externally applied to theOLED display device 109. Thebuffer material 302 may include at least one of, for example, a urethane-based resin, an epoxy-based resin, an acrylic resin, and silicone that is an inorganic sealant. - An
adhesive layer 295 is disposed on thedisplay panel 210 and thewindow 100 is disposed on theadhesive layer 295. One of theplastic substrates window 100. The first organic-inorganic hybrid layer 121 of theplastic substrates display panel 210. - Hereinafter, a tenth exemplary embodiment is described with reference to
FIG. 14 . -
FIG. 14 is a cross-sectional view illustrating anOLED display device 1010 according to a tenth exemplary embodiment. TheOLED display device 1010 according to the tenth exemplary embodiment includes a thinfilm encapsulation layer 350 provided on thesecond electrode 313 to protect theOLED 310. - The thin
film encapsulation layer 350 includes one or more inorganic layers and one or more organic layers, and substantially prevents outside air such as moisture or oxygen from permeating into theOLED 310, or reduces the likelihood thereof. - The thin
film encapsulation layer 350 may have a structure in which theinorganic layers organic layers FIG. 14 , the thinfilm encapsulation layer 350 includes three inorganic layers (i.e., theinorganic layers organic layers 352 and 354), but the structure of the thinfilm encapsulation layer 350 according to the tenth exemplary embodiment is not limited thereto. - Each of the
inorganic layers inorganic layers inorganic layers - The
organic layers organic layers organic layers OLED 310. However, the tenth exemplary embodiment is not limited thereto and theorganic layers - The
inorganic layers OLED 310 may be largely prevented by theinorganic layers - The
organic layers inorganic layers organic layers film encapsulation layer 350 may be planarized. - The thin
film encapsulation layer 350 may have a relatively small thickness of about 10 μm or less. Accordingly, theOLED display device 1010 may also have a relatively small thickness. - When the thin
film encapsulation layer 350 is disposed on theOLED 310, thesecond substrate 212 may be omitted. When thesecond substrate 212 is omitted, the flexible characteristics of theOLED display device 1010 are improved. - The
adhesive layer 295 is disposed on the thinfilm encapsulation layer 350 and thewindow 100 is disposed on theadhesive layer 295. -
FIG. 15 is a plan view illustrating a liquid crystal display (“LCD”)device 1011 according to an eleventh exemplary embodiment, andFIG. 16 is a cross-sectional view taken along the line II-II′ ofFIG. 15 . - The
LCD device 1011 according to the eleventh exemplary embodiment includes anLCD panel 400 and awindow 100 on theLCD panel 400. - The
LCD panel 400 includes adisplay substrate 410, an opposingsubstrate 420 and a liquid crystal layer LC between thedisplay substrate 410 and the opposingsubstrate 420. - The
display substrate 410 includes afirst substrate 401 and a gate line GL, a data line DL, a thin film transistor TFT, agate insulating layer 421, an insulatinginterlayer 431, afirst color filter 451, asecond color filter 452, aplanarization layer 491, a pixel electrode PE and alight blocking portion 476 on thefirst substrate 401. - The gate line GL and a gate electrode GE extending from the gate line GL are disposed on the
first substrate 401. - The
gate insulating layer 421 is disposed on the gate line GL and the gate electrode GE. In some exemplary embodiments, thegate insulating layer 421 may be disposed over an entire surface of thefirst substrate 401 including the gate line GL and the gate electrode GE. Thegate insulating layer 421 may include silicon nitride (SiNx), silicon oxide (SiOx), or the like. Thegate insulating layer 421 may have a multi-layer structure including at least two insulating layers having different physical properties. - A semiconductor layer SM is disposed on the
gate insulating layer 421. The semiconductor layer SM overlaps the gate electrode GE, a source electrode SE and a drain electrode DE. The semiconductor layer SM may include amorphous silicon, polycrystalline silicon, or the like. The semiconductor layer SM may include an oxide semiconductor material. An ohmic contact layer may be disposed on the semiconductor layer SM. - The source electrode SE is disposed to partially overlap the semiconductor layer SM. The source electrode SE extends from the data line DL.
- The drain electrode DE is spaced apart from the source electrode SE and partially overlaps the semiconductor layer SM. The drain electrode DE is connected to the pixel electrode PE. The drain electrode DE and the source electrode SE may be formed concurrently (or substantially simultaneously) in a substantially same process.
- The thin film transistor TFT is defined by the gate electrode GE, the semiconductor layer SM, the source electrode SE and the drain electrode DE.
- A channel area of the thin film transistor TFT is positioned at a portion of the semiconductor layer SM between the source electrode SE and the drain electrode DE.
- The data line DL is disposed on the
gate insulating layer 421 and crosses the gate line GL. The data line DL and the source electrode SE may be formed substantially simultaneously in a substantially same process. - The semiconductor layer SM may be further provided between the
gate insulating layer 421 and the source electrode SE and may be further provided between thegate insulating layer 421 and the drain electrode DE. In addition, the semiconductor layer SM may be further provided between thegate insulating layer 421 and the data line DL. - The insulating
interlayer 431 is disposed on the data line DL, the source electrode SE, the drain electrode DE, the semiconductor layer SM and thegate insulating layer 421. In some exemplary embodiments, the insulatinginterlayer 431 may be disposed over an entire surface of thefirst substrate 401 including the data line DL, the source electrode SE, the drain electrode DE and thegate insulating layer 421. Referring toFIGS. 15 and 16 , the insulatinginterlayer 431 has a drain contact hole (or a drain contact opening) 432. - The insulating
interlayer 431 may include an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), or may include an organic layer. In addition, the insulatinginterlayer 431 may have a bilayer structure including a lower inorganic layer and an upper organic layer. - The
first color filter 451 and thesecond color filter 452 are disposed on the insulatinginterlayer 431. Edges of the first andsecond color filters second color filters second color filters second color filters - The
first color filter 451 and thesecond color filter 452 have different colors and may each be one of a red color filter, a green color filter, a blue color filter, a cyan color filter, a magenta color filter, a yellow color filter and a white color filter. - The
LCD device 1011 according to the eleventh exemplary embodiment may further include a third color filter. The third color filter has a color different from those of thefirst color filter 451 and thesecond color filter 452 and may be one of a red color filter, a green color filter, a blue color filter, a cyan color filter, a magenta color filter and a yellow color filter. - However, the eleventh exemplary embodiment is not limited thereto and the first and
second color filters second substrate 402, for example. - The
planarization layer 491 is disposed on the first andsecond color filters planarization layer 491 may be disposed over an entire surface of thefirst substrate 401 including the first andsecond color filters interlayer 431. However, referring toFIGS. 15 and 16 , theplanarization layer 491 may have an opening defined to correspond to thedrain contact hole 432. - The
planarization layer 491 functions as a protective layer and planarizes a portion below the pixel electrode PE. Theplanarization layer 491 may be referred to as a protective layer. Theplanarization layer 491 may include an organic material, for example, a photosensitive organic material and/or a photosensitive resin composition. In some exemplary embodiments, theplanarization layer 491 may be also referred to as an organic layer. - The pixel electrode PE is connected to the drain electrode DE through the
drain contact hole 432. The pixel electrode PE is disposed on theplanarization layer 491. A part of an edge of the pixel electrode PE may overlap thelight blocking portion 476. - The
light blocking portion 476 is disposed on the pixel electrode PE and theplanarization layer 491. For example, thelight blocking portion 476 overlaps the TFT, the gate lines GL and the data line DL to block light leakage. - As illustrated in
FIG. 16 , acolumn spacer 472 may be positioned on thelight blocking portion 476. Thecolumn spacer 472 has a shape protruding from thelight blocking portion 476 toward the opposingsubstrate 420 to a predetermined height. Thecolumn spacer 472 maintains a cell gap between thedisplay substrate 410 and the opposingsubstrate 420. - The
column spacer 472 and thelight blocking portion 476 may be unitary (e.g., in a monolithic structure). In some exemplary embodiments, thecolumn spacer 472 and thelight blocking portion 476 may be concurrently (or substantially simultaneously) manufactured using a substantially the same material. Thecolumn spacer 472 and thelight blocking portion 476 may be collectively referred to as a black column spacer (BCS). - The opposing
substrate 420 includes thesecond substrate 402 and a common electrode CE on thesecond substrate 402. - The liquid crystal layer LC is disposed between the
display substrate 410 and the opposingsubstrate 420. - An
adhesive layer 295 is disposed on theLCD panel 400 including thedisplay substrate 410, the liquid crystal layer LC and the opposingsubstrate 420, and thewindow 100 is disposed on theadhesive layer 295. - One of the
plastic substrates window 100. The first organic-inorganic hybrid layer 121 of theplastic substrates LCD panel 400. - As set forth hereinabove, according to one or more exemplary embodiments, the plastic substrate has excellent hardness and abrasion resistance. Accordingly, the plastic substrate may be utilized as a window for display devices.
- While certain embodiments of the present invention have been illustrated and described, it is understood by those of ordinary skill in the art that certain modifications and changes can be made to the described embodiments without departing from the spirit and scope of the present invention as defined by the following claims, and equivalents thereof.
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/953,137 US20230051952A1 (en) | 2016-07-11 | 2022-09-26 | Plastic substrate with improved hardness and display device including the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0087605 | 2016-07-11 | ||
KR1020160087605A KR102571242B1 (en) | 2016-07-11 | 2016-07-11 | Plastic substrate with improved hardness and display device comprising the same |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/953,137 Division US20230051952A1 (en) | 2016-07-11 | 2022-09-26 | Plastic substrate with improved hardness and display device including the same |
Publications (1)
Publication Number | Publication Date |
---|---|
US20180009200A1 true US20180009200A1 (en) | 2018-01-11 |
Family
ID=60893048
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/647,010 Abandoned US20180009200A1 (en) | 2016-07-11 | 2017-07-11 | Plastic substrate with improved hardness and display device including the same |
US17/953,137 Pending US20230051952A1 (en) | 2016-07-11 | 2022-09-26 | Plastic substrate with improved hardness and display device including the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/953,137 Pending US20230051952A1 (en) | 2016-07-11 | 2022-09-26 | Plastic substrate with improved hardness and display device including the same |
Country Status (3)
Country | Link |
---|---|
US (2) | US20180009200A1 (en) |
KR (1) | KR102571242B1 (en) |
CN (1) | CN107611157B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10071584B2 (en) | 2012-07-09 | 2018-09-11 | Apple Inc. | Process for creating sub-surface marking on plastic parts |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102412941B1 (en) | 2018-01-19 | 2022-06-23 | 주식회사 엘지에너지솔루션 | Terminal cover and battery pack comprising the same |
KR20210080654A (en) | 2019-12-20 | 2021-07-01 | 삼성디스플레이 주식회사 | Glass article and display device including the same |
CN111716843B (en) * | 2020-06-28 | 2021-02-09 | 广州市兴联达塑料制品有限公司 | 3D developing polymer film and preparation method thereof |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09113943A (en) * | 1995-10-18 | 1997-05-02 | Mitsubishi Electric Corp | Organic-inorganic hybrid material and its production |
US6555182B1 (en) * | 1998-07-03 | 2003-04-29 | Sony Corporation | Surface hardened resins for disk substrates, methods of manufacture thereof and production devices for the manufacture thereof |
JP4159844B2 (en) * | 2001-10-09 | 2008-10-01 | 株式会社半導体エネルギー研究所 | Information terminal, mobile phone, digital still camera and video camera provided with light emitting device and display unit using light emitting element |
JP3845569B2 (en) * | 2001-11-08 | 2006-11-15 | セイコーエプソン株式会社 | Thin film semiconductor device, method for manufacturing the same, and electronic device including the device |
WO2005065272A2 (en) * | 2003-12-30 | 2005-07-21 | Trustees Of Stevens Institute Of Technology | Three-dimensional imaging system using optical pulses, non-linear optical mixers and holographic calibration |
DE602005014199D1 (en) * | 2004-02-06 | 2009-06-10 | Lg Chemical Ltd | PLASTIC CARRIER WITH MULTILAYER STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF |
JP5558243B2 (en) * | 2010-07-21 | 2014-07-23 | パナソニック株式会社 | Semiconductor device |
JP5988989B2 (en) * | 2011-11-04 | 2016-09-07 | リンテック株式会社 | GAS BARRIER FILM AND MANUFACTURING METHOD THEREOF, GAS BARRIER FILM LAMINATE, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE |
JP5339655B1 (en) * | 2012-01-20 | 2013-11-13 | リンテック株式会社 | Gas barrier film and method for producing gas barrier film |
KR20140119860A (en) * | 2013-03-27 | 2014-10-13 | 삼성디스플레이 주식회사 | Window for display device and display device including the window |
WO2015146749A1 (en) * | 2014-03-26 | 2015-10-01 | 東レ株式会社 | Method for manufacturing semiconductor device and semiconductor device |
KR102293691B1 (en) * | 2014-07-23 | 2021-08-25 | 삼성디스플레이 주식회사 | Composite sheet and display device comprising the same |
-
2016
- 2016-07-11 KR KR1020160087605A patent/KR102571242B1/en active IP Right Grant
-
2017
- 2017-07-11 CN CN201710559587.3A patent/CN107611157B/en active Active
- 2017-07-11 US US15/647,010 patent/US20180009200A1/en not_active Abandoned
-
2022
- 2022-09-26 US US17/953,137 patent/US20230051952A1/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10071584B2 (en) | 2012-07-09 | 2018-09-11 | Apple Inc. | Process for creating sub-surface marking on plastic parts |
US11597226B2 (en) | 2012-07-09 | 2023-03-07 | Apple Inc. | Process for creating sub-surface marking on plastic parts |
Also Published As
Publication number | Publication date |
---|---|
CN107611157B (en) | 2023-09-01 |
KR20180007044A (en) | 2018-01-22 |
US20230051952A1 (en) | 2023-02-16 |
KR102571242B1 (en) | 2023-08-25 |
CN107611157A (en) | 2018-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20230051952A1 (en) | Plastic substrate with improved hardness and display device including the same | |
CN106257680B (en) | Display device | |
TWI688089B (en) | Organic light-emitting diode (oled) display, electronic device including the same, and method of manufacturing the oled display | |
EP3511808A1 (en) | Display device | |
US11230632B2 (en) | Plastic substrate and display device comprising the same | |
US10672911B2 (en) | Thin film transistor substrate and display panel having the same | |
KR102056314B1 (en) | Protective window and flexible display device including the same | |
US9661114B2 (en) | Foldable, flexible display apparatus and method of manufacturing the same | |
KR101094298B1 (en) | Organic light emitting diode display | |
US11048113B2 (en) | Display device | |
KR20180058165A (en) | Flexible display device | |
US9818973B2 (en) | Display device | |
KR102037377B1 (en) | Organic light emitting diode display | |
CN103187536A (en) | Organic light-emitting display apparatus and method of manufacturing the same | |
US10658616B2 (en) | Display device and method of fabricating the same | |
KR102312297B1 (en) | Display device | |
US20190019974A1 (en) | Method of manufacturing display device | |
US11508940B2 (en) | Display device with optical pattern layer | |
US20070164673A1 (en) | Organic electro-luminescent display device and method for making same | |
KR20130114375A (en) | Organic light emitting display device | |
JP2005191015A (en) | Light-emitting device and electronic apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SAMSUNG DISPLAY CO., LTD., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HEO, JINNYOUNG;OH, HWAJIN;SEO, HYEMIN;AND OTHERS;REEL/FRAME:042978/0847 Effective date: 20170707 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE AFTER FINAL ACTION FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: ADVISORY ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE AFTER FINAL ACTION FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: ADVISORY ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |