US20170315415A1 - Transistor substrate and display device manufactured from the transistor substrate - Google Patents
Transistor substrate and display device manufactured from the transistor substrate Download PDFInfo
- Publication number
- US20170315415A1 US20170315415A1 US15/498,551 US201715498551A US2017315415A1 US 20170315415 A1 US20170315415 A1 US 20170315415A1 US 201715498551 A US201715498551 A US 201715498551A US 2017315415 A1 US2017315415 A1 US 2017315415A1
- Authority
- US
- United States
- Prior art keywords
- electrode
- slit
- edge
- transistor substrate
- scan lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 93
- 239000010410 layer Substances 0.000 description 77
- 239000000463 material Substances 0.000 description 22
- 239000004973 liquid crystal related substance Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 4
- -1 tungsten nitride Chemical class 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910002938 (Ba,Sr)TiO3 Inorganic materials 0.000 description 1
- 229910017121 AlSiO Inorganic materials 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910021350 transition metal silicide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Definitions
- the disclosure relates to a transistor substrate and a display device manufactured from the transistor substrate.
- the disclosure in particular relates to a transistor substrate including an electrode having a slit and a display device manufactured from the transistor substrate.
- Display devices have been widely used in the display components of a variety of products.
- Liquid-crystal displays utilize the properties of liquid-crystal molecules, which have different polarization or reflection effects to lights under different arrangement states, so as to control the amounts of the transmitting lights. These liquid-crystal displays thus create images.
- the traditional twisted nematic (TN) liquid-crystal displays have outstanding transmission properties, but the visual angles thereof are quite narrow due to the structural and optical features of the liquid-crystal molecules.
- FFS fringe-field switching
- IPS in-plane switching
- the present disclosure provides a transistor substrate, including a plurality of data lines and a plurality of scan lines intersecting with the plurality of data lines to define a plurality of pixel units.
- One of the pixel units includes a first electrode, a second electrode, and a switching transistor.
- the first electrode has a slit that is substantially parallel to the data lines.
- One of the first electrode and the second electrode is used for receiving a pixel voltage signal, and the other of the first electrode and the second electrode is used for receiving a common voltage signal.
- the switching transistor includes a gate electrode and a drain electrode.
- the gate electrode is connected to one of the scan lines and includes a first edge that is substantially parallel to the extending direction of the scan lines.
- the drain electrode is electrically connected to either the first electrode or the second electrode.
- the drain electrode includes an extending portion, wherein the extending portion extends toward the slit and extends away from an extending line of the first edge.
- the drain electrode and the slit have an overlapping region
- the present disclosure also provides a display device, including: a transistor substrate as described above; an opposing substrate disposed opposite to the transistor substrate; and a display medium disposed between the transistor substrate and the opposing substrate.
- FIG. 1 is a top view of the transistor substrate of the display device in accordance with some embodiments of the present disclosure
- FIG. 2A is a partially enlarged figure of the transistor substrate of the display device in FIG. 1 ;
- FIG. 2B is a cross-sectional view along line 2 B- 2 B in FIG. 2A in accordance with some embodiments of the present disclosure
- FIG. 2C is a top view of the transistor substrate of the display device in accordance with some embodiments of the present disclosure.
- FIG. 3A is a diagram showing the relationship between the length and the aperture ratio of the extending portion of the drain electrode within the overlapping region in accordance with some embodiments of the present disclosure
- FIG. 3B is a diagram showing the relationship between the length and the light transmittance of the extending portion of the drain electrode within the overlapping region in accordance with some embodiments of the present disclosure
- FIG. 3C is a diagram showing the relationship between the length and the contrast ratio of the extending portion of the drain electrode within the overlapping region in accordance with some embodiments of the present disclosure
- FIG. 4 is a cross-sectional view of the transistor substrate of the display device in accordance with another embodiment of the present disclosure.
- FIG. 5 is a top view of the transistor substrate of the display device in accordance with another embodiment of the present disclosure.
- first material layer disposed on/over a second material layer may indicate the direct contact of the first material layer and the second material layer, or it may indicate a non-contact state with one or more intermediate layers between the first material layer and the second material layer. In the above situation, the first material layer may not be in direct contact with the second material layer.
- a layer overlying another layer may indicate that the layer is in direct contact with the other layer, or that the layer is not in direct contact with the other layer, there being one or more intermediate layers disposed between the layer and the other layer.
- the terms “about” and “substantially” typically mean +/ ⁇ 20% of the stated value, more typically +/ ⁇ 10% of the stated value, more typically +/ ⁇ 5% of the stated value, more typically +/ ⁇ 3% of the stated value, more typically +/ ⁇ 2% of the stated value, more typically +/ ⁇ 1% of the stated value and even more typically +/ ⁇ 0.5% of the stated value.
- the stated value of the present disclosure is an approximate value. When there is no specific description, the stated value includes the meaning of “about” or “substantially”.
- first, second, third etc. may be used herein to describe various elements, components, regions, layers, portions and/or sections, these elements, components, regions, layers, portions and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, portion or section from another region, layer or section. Thus, a first element, component, region, layer, portion or section discussed below could be termed a second element, component, region, layer, portion or section without departing from the teachings of the present disclosure.
- relative terms such as “lower,” “upper,” “horizontal,” “vertical,”, “above,” “below,” “up,” “down,” “top” and “bottom” as well as derivative thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) should be construed to refer to the orientation as then described or as shown in the drawing under discussion. These relative terms are for convenience of description and do not require that the apparatus be constructed or operated in a particular orientation.
- Terms concerning attachments, coupling and the like, such as “connected” and “interconnected,” refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
- substrate is meant to include devices formed within a transparent substrate and the layers overlying the transparent substrate. All transistor element needed may already be formed over the substrate. However, the substrate is represented with a flat surface in order to simplify the drawing.
- substrate surface is meant to include the uppermost exposed layers on a transparent substrate, such as an insulating layer and/or metallurgy lines.
- the drain electrode overlaps with the end portion of the slit of the pixel electrode or the common electrode so as to shield light leaks of the end portion, which in turn improves the aperture ratio or the contrast rate of the display device.
- FIG. 1 is a top view of a transistor substrate 102 of a display device 100 in accordance with some embodiments of the present disclosure.
- FIG. 2A is a partially enlarged figure of one of the pixel units of the transistor substrate 102 of the display device 100 in FIG. 1 .
- the transistor substrate 102 may include a plurality of scan lines (gate lines) 104 extending along a first direction A 1 and a plurality of data lines 106 intersecting the scan lines 104 .
- the scan lines 104 extend along direction A 1
- data lines 106 are substantially perpendicular or orthogonal to the scan-lines and extend along a second direction A 2 .
- the plurality of scan lines 104 and the plurality of data lines 106 intersect each other to define a plurality of pixel units 108 , such as sub-pixels.
- One of the pixel units 108 includes a switching transistor 110 .
- the data lines 106 may provide a signal to the pixel units 108 through the switching transistor 110 .
- the scan lines (gate lines) 104 may provide the scanning pulse signal to the pixel units 108 through the switching transistor 110 and control the pixel units 108 in coordination with the aforementioned signal.
- the switching transistor 110 includes a semiconductor layer 152 , a source electrode 112 , a drain electrode 114 and a gate electrode 116 .
- the gate electrode 116 is connected to one of the scan lines 104 and extends from the scan line 104 along the second direction A 2 .
- the source electrode 112 is a portion of the data line 106 .
- FIG. 2B is a cross-sectional view along line 2 B- 2 B in FIG. 2A in accordance with some embodiments of the present disclosure.
- the transistor substrate 102 may include a substrate 118 .
- the substrate 118 may include, but is not limited to, a transparent substrate, such as a glass substrate, a ceramic substrate, a plastic substrate, or any other suitable transparent substrate.
- the above-mentioned data lines 106 , the source electrode 112 and the drain electrode 114 are disposed on the substrate 118 .
- the insulating layer 120 is disposed between the data lines 106 and the substrate 118 , between the source electrode 112 and the substrate 118 , and between the drain electrode 114 and the substrate 118 .
- the insulating layer 120 is illustrated as one layer for simplicity. In practical processes, the insulating layer 120 may include more than a single layer.
- the insulating layer 120 may include a gate dielectric layer and a buffer layer.
- the materials of the gate electrode 116 and gate line 104 may include one or more types of metal, metal nitride, conductive metal oxide, or a combination thereof.
- the metal may include, but is not limited to, molybdenum, tungsten, titanium, tantalum, platinum, or hafnium.
- the metal nitride may include, but is not limited to, molybdenum nitride, tungsten nitride, titanium nitride or tantalum nitride.
- the conductive metal oxide may include, but is not limited to, ruthenium oxide or indium tin oxide.
- the gate electrode 116 and gate line 104 may be formed by the chemical vapor deposition (CVD), sputtering, resistive thermal evaporation, electron beam evaporation, or any other suitable methods.
- the material of the gate dielectric layer 120 may include silicon oxide, silicon nitride, silicon oxynitride, high-k dielectric material, any other suitable dielectric material, or a combination thereof.
- the high-k dielectric material may include, but is not limited to, metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silicide, metal oxynitride, metal aluminate, zirconium silicate, zirconium aluminate.
- the material of the high-k dielectric material may include, but is not limited to, LaO, AlO, ZrO, TiO, Ta 2 O 5 , Y 2 O 3 , SrTiO 3 (STO), BaTiO 3 (BTO), BaZrO, HfO 2 , HfO 3 , HfZrO, HfLaO, HfSiO, HfSiON, LaSiO, AlSiO, HfTaO, HfSiO, HfTaTiO, HfAlON, (Ba,Sr)TiO 3 (BST), Al 2 O 3 , any other suitable high-k dielectric material, or a combination thereof.
- the gate dielectric layer 120 may be formed by chemical vapor deposition or spin-on coating.
- the chemical vapor deposition may include, but is not limited to, low pressure chemical vapor deposition (LPCVD), low temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or any other suitable method.
- LPCVD low pressure chemical vapor deposition
- LTCVD low temperature chemical vapor deposition
- RTCVD rapid thermal chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
- ALD atomic layer deposition
- the data line 106 (including the source electrode 112 ) and the drain electrode 114 are disposed on the insulating layer 120 .
- the materials of the data line 106 (including the source electrode 112 ) and the drain electrode 114 may include, but is not limited to, copper, aluminum, molybdenum, tungsten, gold, cobalt, nickel, platinum, titanium, iridium, rhodium, an alloy thereof, a combination thereof, or any other conductive material.
- the data line 106 (including the source electrode 112 ) and the drain electrode 114 may include a nonmetal material as long as the material is conductive.
- the material of the data line 106 (including the source electrode 112 ) and the drain electrode 114 may be formed by chemical vapor deposition (CVD), sputtering, resistive thermal evaporation, electron beam evaporation, or any other suitable method. In some embodiments, the materials of the data line 106 (including the source electrode 112 ) and the drain electrode 114 may be the same, and the data line 106 (including the source electrode 112 ) and the drain electrode 114 may be formed in the same deposition step.
- CVD chemical vapor deposition
- sputtering resistive thermal evaporation
- electron beam evaporation electron beam evaporation
- the data line 106 (including the source electrode 112 ) and the drain electrode 114 may be formed in different deposition steps, and the materials of the data line 106 (including the source electrode 112 ) and the drain electrode 114 may be different from each other.
- the transistor substrate 102 may further include a first insulating layer 122 , which covers the data lines 106 (including the source electrode 112 ), the drain electrode 114 and the gate dielectric layer 120 .
- the material of the first insulating layer 122 may include an organic material or an inorganic material such as silicon nitride, silicon oxide, or silicon oxynitride.
- the first insulating layer 122 may be formed by chemical vapor deposition (CVD) or spin-on coating.
- the chemical vapor deposition may include, but is not limited to, low pressure chemical vapor deposition (LPCVD), low temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or any other suitable method.
- LPCVD low pressure chemical vapor deposition
- LTCVD low temperature chemical vapor deposition
- RTCVD rapid thermal chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
- ALD atomic layer deposition
- the material of the first insulating layer 122 may include the combinations of the organic insulating materials or the inorganic insulating materials.
- the transistor substrate 102 may further include a common electrode 124 disposed on the first insulating layer 122 .
- the common electrode 124 is used for receiving a common voltage signal.
- the transistor substrate 102 may further include a second insulating layer 126 covering the common electrode 124 .
- the second insulating layer 126 may include, but is not limited to, silicon nitride, silicon oxide, or silicon oxynitride.
- the transistor substrate 102 may further include a pixel electrode 128 disposed on the second insulating layer 126 .
- the pixel electrode 128 is used for receiving a pixel voltage signal.
- the common electrode 124 can be disposed corresponding to the pixel electrode 128 .
- the pixel electrode 128 is electrically connected to the drain electrode 114 of the switching transistor 110 through an opening 130 as shown in FIG. 2A .
- the pixel electrode 128 can receive the pixel voltage signal via the drain electrode 114 .
- the drain electrode 114 can be electrically connected to one of the plurality of data lines 106 .
- the display device 100 may further include an opposing substrate 132 disposed opposite to the transistor substrate 102 , and a display medium 134 disposed between the transistor substrate 102 and the opposing substrate 132 .
- the display device 100 may be, but is not limited to, a touch liquid-crystal display such as a thin film transistor liquid-crystal display.
- the liquid-crystal display may include, but is not limited to, a twisted nematic (TN) liquid-crystal display, a super twisted nematic (STN) liquid-crystal display, a double layer super twisted nematic (DSTN) liquid-crystal display, a vertical alignment (VA) liquid-crystal display, an in-plane switching (IPS) liquid-crystal display, a cholesteric liquid-crystal display, a blue phase liquid-crystal display, a fringe-field switching (FFS) liquid-crystal display, or any other suitable liquid-crystal display.
- TN twisted nematic
- STN super twisted nematic
- DSTN double layer super twisted nematic
- VA vertical alignment
- IPS in-plane switching
- the opposing substrate 132 serves as a color filter substrate.
- the opposing substrate 132 which serves as a color filter substrate, may include a substrate 136 , a light-shielding layer 138 disposed over the substrate 136 , a color filter layer 140 disposed over the light-shielding layer 138 and the substrate 136 , and a overcoat layer 142 covering the light-shielding layer 138 and the color filter layer 140 .
- the substrate 136 may be a transparent substrate such as a glass substrate, a ceramic substrate, a plastic substrate, or any other suitable transparent substrate.
- the light-shielding layer 138 may be, but is not limited to, black photoresist, black printing ink, or black resin.
- the color filter layer 140 may include a red color filter layer, a green color filter layer, a blue color filter layer, or any other suitable color filter layer.
- FIG. 2C is a top view of the transistor substrate 102 of the display device 100 in accordance with some embodiments of the present disclosure, which shows the same transistor substrate 102 and the same light-shielding layer 138 of the opposing substrate as in FIG. 1 .
- the light-shielding layer 138 defines a pixel aperture region 144 .
- the region of the transistor substrate 102 that is not shielded by the light-shielding layer 138 is the pixel aperture region 144
- the region of the transistor substrate 102 that corresponds to the light-shielding layer 138 of the opposing substrate 132 is the light-shielding region.
- the pixel electrode 128 has a slit 146 , and the slit 146 is substantially parallel to the data line 106 .
- the gate electrode 116 includes a first edge 116 E.
- the first edge 116 E is substantially parallel to the extending direction A 1 of the scan line 104 , and is the edge of the gate electrode 116 which is farthest from the corresponding scan line 104 .
- the first edge 116 E is adjacent to the slit 146 .
- the drain electrode 114 includes an extending portion 114 A.
- the extending portion 114 A extends toward the slit 146 and extends away from an extending line 116 EA of the first edge 116 E.
- the drain electrode 114 and the slit 146 have an overlapping region.
- the extending portion 114 A of the drain electrode 114 at least partially overlaps the slit 146 of the pixel electrode 128 .
- the slit 146 includes a major axis portion 146 A and a curved portion 146 B (or is referred to as an end portion 146 B) connected to the major axis portion 146 A.
- the slope of the edge of the major axis portion 146 A is different from the slope of the edge of the curved portion 146 B.
- the edge of the major axis portion 146 A is substantially parallel to the data line 106
- the edge of the curved portion 146 B is substantially not parallel to the data line 106 .
- the point of the edge of the slit 146 where the slope thereof starts to be different from the slope of the edge of the data line 106 is point 146 P.
- the line crossing through point 146 P and parallel to the extending direction A 1 of the scan line 104 is line 146 PL.
- Line 146 PL is the boundary between the major axis portion 146 A and the curved portion 146 B.
- the overlapping region between the extending portion 114 A of the drain electrode 114 and the slit 146 is located within the curved portion 146 B.
- light leaks may occur in the region corresponding to the curved portion 146 B of the slit 146 .
- a light-shielding layer is used for shielding light leaks in such portions.
- the light-shielding layer used in a traditional display device also shields regions other than the above curved portion of the slit.
- the light-shielding layer may shield the whole region 148 including the curved portion 146 B (as shown in FIG. 2C ).
- the extending portion 114 A of the drain electrode 114 merely shields the curved portion 146 B of the slit and does not shield other regions such as regions other than the curved portion 146 B in the above region 148 . Therefore, the embodiments of the present disclosure may improve the aperture ratio of the display device.
- a portion of the extending portion 114 A of the drain electrode 114 is located within the pixel aperture region 144 .
- the length L of the curved portion 146 B along direction A 2 is from 2 ⁇ m to 4 ⁇ m, in which direction A 2 is perpendicular to the extending direction A 1 of the scan line 104 .
- the distance D 1 between the end of the curved portion 146 B and the first edge 116 E of the gate electrode 116 along direction A 2 is from 3 ⁇ m to 5 ⁇ m, in which direction A 2 is perpendicular to the extending direction A 1 of the scan line 104 .
- the end of the curved portion 146 B is the point in the curved portion 146 B which is nearest to the gate electrode 116 or the scan line 104 along direction A 2 .
- line 115 is the line crossing through the end of the curved portion 146 B and parallel to direction A 1 .
- the distance D 1 is the distance from line 115 to the extending line 116 EA of the first edge 116 E along direction A 2 .
- the extending portion 114 A includes a second edge 114 AE.
- the second edge 114 AE is substantially parallel to the first edge 116 E and is the edge of the extending portion 114 A which is farthest from the gate electrode 116 or the scan line 104 along direction A 2 .
- at least a portion of the second edge 114 AE is located within the aforementioned overlapping region.
- FIG. 3A is a diagram showing the relationship between the length of the extending portion of the drain electrode within the overlapping region and the aperture ratio in accordance some embodiments of the present disclosure.
- the horizontal axis represents the ratio of [the length D 2 of the extending portion 114 A of the drain electrode 114 along direction A 2 within the overlapping region] and [the length L of the curved portion 146 B along direction A 2 ].
- the aperture ratio of the pixel unit 108 is 50.05%.
- the aperture ratio of the pixel unit 108 is 49.41%.
- the maximum value of length D 2 is the maximum value of length L (4 ⁇ m) times 0.78, which is 3.12 ⁇ m.
- the minimum distance D 3 between the first edge 116 E of the gate electrode 116 and the second edge 114 AE of the extending portion 114 A along direction A 2 is the above length D 2 plus distance D 1 . Therefore, when the aperture ratio is decreased by 1%, the maximum value of distance D 3 is the maximum value of the above length D 2 (3.12 ⁇ m) plus the maximum value of distance D 1 (5 ⁇ m), which is 8.12 ⁇ m or about 8.2 ⁇ m.
- the extending line of the second edge 114 AE of the extending portion 114 A is extending line 117 .
- the length D 2 described above is the distance between the extending line 117 and line 115 along direction A 2 .
- the distance D 3 described above is the distance between the extending line 117 and the extending line 116 EA of the first edge 116 E along direction A 2 .
- FIG. 3B is a diagram showing the relationship between the length of the extending portion of the drain electrode within the overlapping region and the light transmittance in accordance with some embodiments of the present disclosure.
- the horizontal axis represents the ratio of [the length D 2 of the extending portion 114 A of the drain electrode 114 along direction A 2 within the overlapping region] and [the length L of the curved portion 146 B along direction A 2 ].
- the vertical axis represents the light transmittance of the pixel unit 108 .
- the light transmittance of the pixel unit 108 is defined as 100%.
- the extending portion 114 A of the drain electrode 114 completely shields the curved portion 146 B of the slit 146 (D 2 /L 1), the light transmittance of the pixel unit 108 is 98.92%.
- D 2 /L is 0.65
- the light transmittance is 99.50%.
- the maximum value of length D 2 is the maximum value of length L (4 ⁇ m) times 0.65, which is 2.6 ⁇ m.
- the maximum value of distance D 3 between the first edge 116 E of the gate electrode 116 and the second edge 114 AE of the extending portion 114 A along direction A 2 is the maximum value of the above length D 2 (2.6 ⁇ m) plus the maximum value of distance D 1 (5 ⁇ m), which is about 7.6 ⁇ m.
- FIG. 3C is a diagram showing the relationship between the length of the extending portion of the drain electrode within the overlapping region and the contrast ratio in accordance with some embodiments of the present disclosure.
- the horizontal axis represents the ratio of [the length D 2 of the extending portion 114 A of the drain electrode 114 along direction A 2 within the overlapping region] and [the length L of the curved portion 146 B along direction A 2 ].
- the contrast ratio of the pixel unit 108 is 100.96%.
- the contrast ratio of the pixel unit 108 is 101.49%.
- the increase of one unit of the D 2 /L value may increase the contrast ratio the most.
- the contrast ratio is 100.45%
- the minimum value of length D 2 is the minimum value of length L (2 ⁇ m) times 0.2, which is 0.4 ⁇ m.
- the minimum value of distance D 3 between the first edge 116 E of the gate electrode 116 and the second edge 114 AE of the extending portion 114 A along direction A 2 is the minimum value of the above length D 2 (0.4 ⁇ m) plus the minimum value of distance D 1 (3 ⁇ m), which is about 3.4 ⁇ m.
- the contrast ratio of the device is increased while the aperture ratio and the light transmittance are merely decreased a little.
- the minimum distance D 3 between the first edge 116 E of the gate electrode 116 and the second edge 114 AE of the extending portion 114 A along direction A 2 is greater than 3.4 ⁇ m and is smaller than 7.6 ⁇ m, the contrast ratio of the device is greatly increased while the aperture ratio and the light transmittance are barely decreased.
- the contrast ratio of the device is also greatly increased while the aperture ratio and the light transmittance are barely decreased.
- the aperture ratio and the light transmittance may be decreased excessively.
- the minimum width W 1 of the extending portion 114 A of the drain electrode 114 is greater than the maximum width W 2 of the slit 146 .
- the extending portion 114 A of the drain electrode 114 may completely shield light leaks at the curved portion 146 B of the slit 146 .
- the contrast ratio of the device may be increased.
- FIGS. 1, 2A, 2B, and 2C are merely used for illustration, and the scope of the present application is not intended to be limited to these particular embodiments. Except for the embodiments shown in FIGS. 1, 2A, 2B , and 2 C, the common electrode and the pixel electrode of the present disclosure may be arranged in other ways, for example, as per the embodiment shown in FIG. 4 . The scope of the present disclosure is not limited to the embodiments of FIGS. 1, 2A, 2B, and 2C .
- FIG. 4 is a cross-sectional view of a display device 400 in accordance with another embodiment of the present disclosure.
- the difference between the embodiments shown in FIG. 4 and FIG. 2B is that the common electrode 124 is disposed on the pixel electrode 128 ; the common electrode 124 has the above-mentioned slit 146 ; and the pixel electrode 128 is disposed between two data lines 106 in accordance with the embodiment of FIG. 4 .
- FIGS. 1, 2A, 2B, and 2C are merely used for illustration, and the scope of the present application is not intended to be limited to these particular embodiments. Except for the embodiments shown in FIGS. 1, 2A, 2B , and 2 C, the scan lines of the present disclosure may have other patterns, for example, as in the embodiment shown in FIG. 5 . The scope of the present disclosure is not limited to the embodiments of FIGS. 1, 2A, 2B, and 2C .
- FIG. 5 is a top view of a display device 500 in accordance with another embodiment of the present disclosure. It should be noted that the same or similar elements or layers in above and below contexts are represented by the same or similar reference numerals. The materials, manufacturing methods and functions of these elements or layers are the same or similar to those described above, and thus will not be repeated herein.
- the difference between the embodiments shown in FIG. 5 and FIG. 2B is that the scan line (gate line) 150 has a curved shape in the embodiment of FIG. 5 . However, the scan line (gate line) 150 also extends along direction A 1 , which is the same as the scan line (gate line) 104 in FIG. 1 .
- the drain electrode overlaps the curved portion (or the end portion) of the slit of the pixel electrode or the common electrode so as to shield light leaks of the curved portion.
- the aperture ratio or the contrast rate of the display device is improved.
- drain and source mentioned above in the present disclosure are switchable since the definition of the drain and source is related to the voltage connecting thereto.
- the transistor substrate and the display device manufactured from the transistor substrate of the present disclosure are not limited to the configurations of FIGS. 1 to 5 .
- the present disclosure may merely include any one or more features of any one or more embodiments of FIGS. 1 to 5 . In other words, not all of the features shown in the figures should be implemented in the transistor substrate and the display device manufactured from the transistor substrate of the present disclosure.
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
- This application claims priority of Taiwan Patent Application No. 105113233, filed on Apr. 28, 2016, the entirety of which is incorporated by reference herein.
- The disclosure relates to a transistor substrate and a display device manufactured from the transistor substrate. The disclosure in particular relates to a transistor substrate including an electrode having a slit and a display device manufactured from the transistor substrate.
- Display devices have been widely used in the display components of a variety of products. Liquid-crystal displays (LCDs) utilize the properties of liquid-crystal molecules, which have different polarization or reflection effects to lights under different arrangement states, so as to control the amounts of the transmitting lights. These liquid-crystal displays thus create images. The traditional twisted nematic (TN) liquid-crystal displays have outstanding transmission properties, but the visual angles thereof are quite narrow due to the structural and optical features of the liquid-crystal molecules.
- To solve this problem, manufacturers have recently developed various wide-view liquid-crystal display devices, such as fringe-field switching (FFS) liquid-crystal displays, in-plane switching (IPS) liquid-crystal displays, and so on.
- However, existing display devices have not been satisfactory in every respect. Therefore, a display device which may further improve the aperture ratio or the contrast ratio is needed.
- The present disclosure provides a transistor substrate, including a plurality of data lines and a plurality of scan lines intersecting with the plurality of data lines to define a plurality of pixel units. One of the pixel units includes a first electrode, a second electrode, and a switching transistor. The first electrode has a slit that is substantially parallel to the data lines. One of the first electrode and the second electrode is used for receiving a pixel voltage signal, and the other of the first electrode and the second electrode is used for receiving a common voltage signal. The switching transistor includes a gate electrode and a drain electrode. The gate electrode is connected to one of the scan lines and includes a first edge that is substantially parallel to the extending direction of the scan lines. The drain electrode is electrically connected to either the first electrode or the second electrode. The drain electrode includes an extending portion, wherein the extending portion extends toward the slit and extends away from an extending line of the first edge. The drain electrode and the slit have an overlapping region.
- The present disclosure also provides a display device, including: a transistor substrate as described above; an opposing substrate disposed opposite to the transistor substrate; and a display medium disposed between the transistor substrate and the opposing substrate.
- A detailed description is given in the following embodiments with reference to the accompanying drawings.
- The disclosure may be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
-
FIG. 1 is a top view of the transistor substrate of the display device in accordance with some embodiments of the present disclosure; -
FIG. 2A is a partially enlarged figure of the transistor substrate of the display device inFIG. 1 ; -
FIG. 2B is a cross-sectional view alongline 2B-2B inFIG. 2A in accordance with some embodiments of the present disclosure; -
FIG. 2C is a top view of the transistor substrate of the display device in accordance with some embodiments of the present disclosure; -
FIG. 3A is a diagram showing the relationship between the length and the aperture ratio of the extending portion of the drain electrode within the overlapping region in accordance with some embodiments of the present disclosure; -
FIG. 3B is a diagram showing the relationship between the length and the light transmittance of the extending portion of the drain electrode within the overlapping region in accordance with some embodiments of the present disclosure; -
FIG. 3C is a diagram showing the relationship between the length and the contrast ratio of the extending portion of the drain electrode within the overlapping region in accordance with some embodiments of the present disclosure; -
FIG. 4 is a cross-sectional view of the transistor substrate of the display device in accordance with another embodiment of the present disclosure; and -
FIG. 5 is a top view of the transistor substrate of the display device in accordance with another embodiment of the present disclosure. - The transistor substrate of the present disclosure and the display device manufactured from the transistor substrate are described in detail in the following description. In the following detailed description, for purposes of explanation, numerous specific details and embodiments are set forth in order to provide a thorough understanding of the present disclosure. The specific elements and configurations described in the following detailed description are set forth in order to clearly describe the present disclosure. It will be apparent, however, that the exemplary embodiments set forth herein are used merely for the purpose of illustration, and the inventive concept may be embodied in various forms without being limited to those exemplary embodiments. In addition, the drawings of different embodiments may use like and/or corresponding numerals to denote like and/or corresponding elements in order to clearly describe the present disclosure. However, the use of like and/or corresponding numerals in the drawings of different embodiments does not suggest any correlation between different embodiments. In addition, in this specification, expressions such as “first material layer disposed on/over a second material layer”, may indicate the direct contact of the first material layer and the second material layer, or it may indicate a non-contact state with one or more intermediate layers between the first material layer and the second material layer. In the above situation, the first material layer may not be in direct contact with the second material layer.
- It should be noted that the elements or devices in the drawings of the present disclosure may be present in any form or configuration known to those with ordinary skill in the art. In addition, the expressions “a layer overlying another layer”, “a layer is disposed above another layer”, “a layer is disposed on another layer” and “a layer is disposed over another layer” may indicate that the layer is in direct contact with the other layer, or that the layer is not in direct contact with the other layer, there being one or more intermediate layers disposed between the layer and the other layer.
- In addition, in this specification, relative expressions are used. For example, “lower”, “bottom”, “higher” or “top” are used to describe the position of one element relative to another. It should be appreciated that if a device is flipped upside down, an element that is “lower” will become an element that is “higher”.
- The terms “about” and “substantially” typically mean +/−20% of the stated value, more typically +/−10% of the stated value, more typically +/−5% of the stated value, more typically +/−3% of the stated value, more typically +/−2% of the stated value, more typically +/−1% of the stated value and even more typically +/−0.5% of the stated value. The stated value of the present disclosure is an approximate value. When there is no specific description, the stated value includes the meaning of “about” or “substantially”.
- It should be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers, portions and/or sections, these elements, components, regions, layers, portions and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, portion or section from another region, layer or section. Thus, a first element, component, region, layer, portion or section discussed below could be termed a second element, component, region, layer, portion or section without departing from the teachings of the present disclosure.
- Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It should be appreciated that, in each case, the term, which is defined in a commonly used dictionary, should be interpreted as having a meaning that conforms to the relative skills of the present disclosure and the background or the context of the present disclosure, and should not be interpreted in an idealized or overly formal manner unless so defined.
- This description of the exemplary embodiments is intended to be read in connection with the accompanying drawings, which are to be considered part of the entire written description. The drawings are not drawn to scale. In addition, structures and devices are shown schematically in order to simplify the drawing.
- In the description, relative terms such as “lower,” “upper,” “horizontal,” “vertical,”, “above,” “below,” “up,” “down,” “top” and “bottom” as well as derivative thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) should be construed to refer to the orientation as then described or as shown in the drawing under discussion. These relative terms are for convenience of description and do not require that the apparatus be constructed or operated in a particular orientation. Terms concerning attachments, coupling and the like, such as “connected” and “interconnected,” refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
- The term “substrate” is meant to include devices formed within a transparent substrate and the layers overlying the transparent substrate. All transistor element needed may already be formed over the substrate. However, the substrate is represented with a flat surface in order to simplify the drawing. The term “substrate surface” is meant to include the uppermost exposed layers on a transparent substrate, such as an insulating layer and/or metallurgy lines.
- In accordance with the embodiments of the present disclosure, the drain electrode overlaps with the end portion of the slit of the pixel electrode or the common electrode so as to shield light leaks of the end portion, which in turn improves the aperture ratio or the contrast rate of the display device.
-
FIG. 1 is a top view of atransistor substrate 102 of adisplay device 100 in accordance with some embodiments of the present disclosure.FIG. 2A is a partially enlarged figure of one of the pixel units of thetransistor substrate 102 of thedisplay device 100 inFIG. 1 . As shown inFIGS. 1 and 2A , thetransistor substrate 102 may include a plurality of scan lines (gate lines) 104 extending along a first direction A1 and a plurality ofdata lines 106 intersecting the scan lines 104. Thescan lines 104 extend along direction A1, anddata lines 106 are substantially perpendicular or orthogonal to the scan-lines and extend along a second direction A2. - In addition, the plurality of
scan lines 104 and the plurality ofdata lines 106 intersect each other to define a plurality ofpixel units 108, such as sub-pixels. One of thepixel units 108 includes a switchingtransistor 110. - The data lines 106 may provide a signal to the
pixel units 108 through the switchingtransistor 110. The scan lines (gate lines) 104 may provide the scanning pulse signal to thepixel units 108 through the switchingtransistor 110 and control thepixel units 108 in coordination with the aforementioned signal. - The switching
transistor 110 includes asemiconductor layer 152, asource electrode 112, adrain electrode 114 and agate electrode 116. Thegate electrode 116 is connected to one of thescan lines 104 and extends from thescan line 104 along the second direction A2. Thesource electrode 112 is a portion of thedata line 106. -
FIG. 2B is a cross-sectional view alongline 2B-2B inFIG. 2A in accordance with some embodiments of the present disclosure. As shown inFIG. 2B , thetransistor substrate 102 may include asubstrate 118. Thesubstrate 118 may include, but is not limited to, a transparent substrate, such as a glass substrate, a ceramic substrate, a plastic substrate, or any other suitable transparent substrate. The above-mentioneddata lines 106, thesource electrode 112 and thedrain electrode 114 are disposed on thesubstrate 118. In addition, the insulatinglayer 120 is disposed between thedata lines 106 and thesubstrate 118, between thesource electrode 112 and thesubstrate 118, and between thedrain electrode 114 and thesubstrate 118. The insulatinglayer 120 is illustrated as one layer for simplicity. In practical processes, the insulatinglayer 120 may include more than a single layer. For example, the insulatinglayer 120 may include a gate dielectric layer and a buffer layer. - The materials of the
gate electrode 116 andgate line 104 may include one or more types of metal, metal nitride, conductive metal oxide, or a combination thereof. The metal may include, but is not limited to, molybdenum, tungsten, titanium, tantalum, platinum, or hafnium. The metal nitride may include, but is not limited to, molybdenum nitride, tungsten nitride, titanium nitride or tantalum nitride. The conductive metal oxide may include, but is not limited to, ruthenium oxide or indium tin oxide. Thegate electrode 116 andgate line 104 may be formed by the chemical vapor deposition (CVD), sputtering, resistive thermal evaporation, electron beam evaporation, or any other suitable methods. - The material of the
gate dielectric layer 120 may include silicon oxide, silicon nitride, silicon oxynitride, high-k dielectric material, any other suitable dielectric material, or a combination thereof. The high-k dielectric material may include, but is not limited to, metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silicide, metal oxynitride, metal aluminate, zirconium silicate, zirconium aluminate. For example, the material of the high-k dielectric material may include, but is not limited to, LaO, AlO, ZrO, TiO, Ta2O5, Y2O3, SrTiO3(STO), BaTiO3(BTO), BaZrO, HfO2, HfO3, HfZrO, HfLaO, HfSiO, HfSiON, LaSiO, AlSiO, HfTaO, HfSiO, HfTaTiO, HfAlON, (Ba,Sr)TiO3(BST), Al2O3, any other suitable high-k dielectric material, or a combination thereof. Thegate dielectric layer 120 may be formed by chemical vapor deposition or spin-on coating. The chemical vapor deposition may include, but is not limited to, low pressure chemical vapor deposition (LPCVD), low temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or any other suitable method. - Still referring to
FIG. 2B , the data line 106 (including the source electrode 112) and thedrain electrode 114 are disposed on the insulatinglayer 120. The materials of the data line 106 (including the source electrode 112) and thedrain electrode 114 may include, but is not limited to, copper, aluminum, molybdenum, tungsten, gold, cobalt, nickel, platinum, titanium, iridium, rhodium, an alloy thereof, a combination thereof, or any other conductive material. In other embodiments, the data line 106 (including the source electrode 112) and thedrain electrode 114 may include a nonmetal material as long as the material is conductive. The material of the data line 106 (including the source electrode 112) and thedrain electrode 114 may be formed by chemical vapor deposition (CVD), sputtering, resistive thermal evaporation, electron beam evaporation, or any other suitable method. In some embodiments, the materials of the data line 106 (including the source electrode 112) and thedrain electrode 114 may be the same, and the data line 106 (including the source electrode 112) and thedrain electrode 114 may be formed in the same deposition step. However, in other embodiments, the data line 106 (including the source electrode 112) and thedrain electrode 114 may be formed in different deposition steps, and the materials of the data line 106 (including the source electrode 112) and thedrain electrode 114 may be different from each other. - Still referring to
FIG. 2B , thetransistor substrate 102 may further include a first insulatinglayer 122, which covers the data lines 106 (including the source electrode 112), thedrain electrode 114 and thegate dielectric layer 120. The material of the first insulatinglayer 122 may include an organic material or an inorganic material such as silicon nitride, silicon oxide, or silicon oxynitride. The first insulatinglayer 122 may be formed by chemical vapor deposition (CVD) or spin-on coating. The chemical vapor deposition may include, but is not limited to, low pressure chemical vapor deposition (LPCVD), low temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or any other suitable method. - Moreover, in other embodiments, the material of the first insulating
layer 122 may include the combinations of the organic insulating materials or the inorganic insulating materials. - Still referring to
FIG. 2B , thetransistor substrate 102 may further include acommon electrode 124 disposed on the first insulatinglayer 122. Thecommon electrode 124 is used for receiving a common voltage signal. - Still referring to
FIG. 2B , thetransistor substrate 102 may further include a second insulatinglayer 126 covering thecommon electrode 124. The secondinsulating layer 126 may include, but is not limited to, silicon nitride, silicon oxide, or silicon oxynitride. - Still referring to
FIG. 2B , thetransistor substrate 102 may further include apixel electrode 128 disposed on the second insulatinglayer 126. Thepixel electrode 128 is used for receiving a pixel voltage signal. Thecommon electrode 124 can be disposed corresponding to thepixel electrode 128. In addition, thepixel electrode 128 is electrically connected to thedrain electrode 114 of the switchingtransistor 110 through anopening 130 as shown inFIG. 2A . Thus, thepixel electrode 128 can receive the pixel voltage signal via thedrain electrode 114. Thedrain electrode 114 can be electrically connected to one of the plurality of data lines 106. - Moreover, still referring to
FIG. 2B , thedisplay device 100 may further include an opposingsubstrate 132 disposed opposite to thetransistor substrate 102, and adisplay medium 134 disposed between thetransistor substrate 102 and the opposingsubstrate 132. - The
display device 100 may be, but is not limited to, a touch liquid-crystal display such as a thin film transistor liquid-crystal display. The liquid-crystal display may include, but is not limited to, a twisted nematic (TN) liquid-crystal display, a super twisted nematic (STN) liquid-crystal display, a double layer super twisted nematic (DSTN) liquid-crystal display, a vertical alignment (VA) liquid-crystal display, an in-plane switching (IPS) liquid-crystal display, a cholesteric liquid-crystal display, a blue phase liquid-crystal display, a fringe-field switching (FFS) liquid-crystal display, or any other suitable liquid-crystal display. - In some embodiments, the opposing
substrate 132 serves as a color filter substrate. In particular, the opposingsubstrate 132, which serves as a color filter substrate, may include asubstrate 136, a light-shielding layer 138 disposed over thesubstrate 136, acolor filter layer 140 disposed over the light-shielding layer 138 and thesubstrate 136, and aovercoat layer 142 covering the light-shielding layer 138 and thecolor filter layer 140. - The
substrate 136 may be a transparent substrate such as a glass substrate, a ceramic substrate, a plastic substrate, or any other suitable transparent substrate. The light-shielding layer 138 may be, but is not limited to, black photoresist, black printing ink, or black resin. Thecolor filter layer 140 may include a red color filter layer, a green color filter layer, a blue color filter layer, or any other suitable color filter layer. -
FIG. 2C is a top view of thetransistor substrate 102 of thedisplay device 100 in accordance with some embodiments of the present disclosure, which shows thesame transistor substrate 102 and the same light-shielding layer 138 of the opposing substrate as inFIG. 1 . In some embodiments, as shown inFIG. 2C , the light-shielding layer 138 defines apixel aperture region 144. In other words, the region of thetransistor substrate 102 that is not shielded by the light-shielding layer 138 is thepixel aperture region 144, and the region of thetransistor substrate 102 that corresponds to the light-shielding layer 138 of the opposingsubstrate 132 is the light-shielding region. - Referring to
FIG. 2A , showing twoadjacent scan lines 104 and twoadjacent data lines 106 to define apixel unit 128, thepixel electrode 128 has aslit 146, and theslit 146 is substantially parallel to thedata line 106. In addition, thegate electrode 116 includes afirst edge 116E. Thefirst edge 116E is substantially parallel to the extending direction A1 of thescan line 104, and is the edge of thegate electrode 116 which is farthest from thecorresponding scan line 104. Thefirst edge 116E is adjacent to theslit 146. Moreover, thedrain electrode 114 includes an extendingportion 114A. The extendingportion 114A extends toward theslit 146 and extends away from an extending line 116EA of thefirst edge 116E. Thedrain electrode 114 and theslit 146 have an overlapping region. In some embodiments, the extendingportion 114A of thedrain electrode 114 at least partially overlaps theslit 146 of thepixel electrode 128. - In particular, the
slit 146 includes amajor axis portion 146A and acurved portion 146B (or is referred to as anend portion 146B) connected to themajor axis portion 146A. Using the extending direction A1 of thescan line 104 as a basis, the slope of the edge of themajor axis portion 146A is different from the slope of the edge of thecurved portion 146B. For example, in accordance with some embodiments of the present disclosure, the edge of themajor axis portion 146A is substantially parallel to thedata line 106, and the edge of thecurved portion 146B is substantially not parallel to thedata line 106. - Furthermore, in accordance with some embodiments of the present disclosure, the point of the edge of the
slit 146 where the slope thereof starts to be different from the slope of the edge of thedata line 106 ispoint 146P. The line crossing throughpoint 146P and parallel to the extending direction A1 of thescan line 104 is line 146PL. Line 146PL is the boundary between themajor axis portion 146A and thecurved portion 146B. The overlapping region between the extendingportion 114A of thedrain electrode 114 and theslit 146 is located within thecurved portion 146B. - In the
display device 100, light leaks may occur in the region corresponding to thecurved portion 146B of theslit 146. In traditional display devices, a light-shielding layer is used for shielding light leaks in such portions. However, the light-shielding layer used in a traditional display device also shields regions other than the above curved portion of the slit. For example, the light-shielding layer may shield thewhole region 148 including thecurved portion 146B (as shown inFIG. 2C ). By comparison, in the embodiments of the present disclosure, the extendingportion 114A of thedrain electrode 114 merely shields thecurved portion 146B of the slit and does not shield other regions such as regions other than thecurved portion 146B in theabove region 148. Therefore, the embodiments of the present disclosure may improve the aperture ratio of the display device. - In addition, in accordance with some embodiments of the present disclosure, as shown in
FIG. 2C , a portion of the extendingportion 114A of thedrain electrode 114 is located within thepixel aperture region 144. - Next, referring to
FIG. 2A , in accordance with some embodiments of the present disclosure, the length L of thecurved portion 146B along direction A2 is from 2 μm to 4 μm, in which direction A2 is perpendicular to the extending direction A1 of thescan line 104. - Furthermore, in accordance with some embodiments of the present disclosure, the distance D1 between the end of the
curved portion 146B and thefirst edge 116E of thegate electrode 116 along direction A2 is from 3 μm to 5 μm, in which direction A2 is perpendicular to the extending direction A1 of thescan line 104. The end of thecurved portion 146B is the point in thecurved portion 146B which is nearest to thegate electrode 116 or thescan line 104 along direction A2. - In other words,
line 115 is the line crossing through the end of thecurved portion 146B and parallel to direction A1. The distance D1 is the distance fromline 115 to the extending line 116EA of thefirst edge 116E along direction A2. - Moreover, the extending
portion 114A includes a second edge 114AE. The second edge 114AE is substantially parallel to thefirst edge 116E and is the edge of the extendingportion 114A which is farthest from thegate electrode 116 or thescan line 104 along direction A2. In addition, at least a portion of the second edge 114AE is located within the aforementioned overlapping region. -
FIG. 3A is a diagram showing the relationship between the length of the extending portion of the drain electrode within the overlapping region and the aperture ratio in accordance some embodiments of the present disclosure. As shown inFIG. 3A , the horizontal axis represents the ratio of [the length D2 of the extendingportion 114A of thedrain electrode 114 along direction A2 within the overlapping region] and [the length L of thecurved portion 146B along direction A2]. The vertical axis represents the aperture ratio of thepixel unit 108. It has been shown that when the extendingportion 114A of thedrain electrode 114 does not overlap thecurved portion 146B of the slit 146 (D2/L=0), the aperture ratio of thepixel unit 108 is 50.70%. When D2/L=0.5, the aperture ratio of thepixel unit 108 is 50.05%. When the extendingportion 114A of thedrain electrode 114 completely shields thecurved portion 146B of the slit 146 (D2/L=1), the aperture ratio of thepixel unit 108 is 49.41%. - Moreover, when the aperture ratio is decreased by 1%, D2/L is 0.78, and the aperture ratio is 49.70%. The maximum value of length D2 is the maximum value of length L (4 μm) times 0.78, which is 3.12 μm. As shown in
FIG. 2A , the minimum distance D3 between thefirst edge 116E of thegate electrode 116 and the second edge 114AE of the extendingportion 114A along direction A2 is the above length D2 plus distance D1. Therefore, when the aperture ratio is decreased by 1%, the maximum value of distance D3 is the maximum value of the above length D2 (3.12 μm) plus the maximum value of distance D1 (5 μm), which is 8.12 μm or about 8.2 μm. - In addition, the extending line of the second edge 114AE of the extending
portion 114A is extendingline 117. The length D2 described above is the distance between the extendingline 117 andline 115 along direction A2. The distance D3 described above is the distance between the extendingline 117 and the extending line 116EA of thefirst edge 116E along direction A2. -
FIG. 3B is a diagram showing the relationship between the length of the extending portion of the drain electrode within the overlapping region and the light transmittance in accordance with some embodiments of the present disclosure. As shown inFIG. 3B , the horizontal axis represents the ratio of [the length D2 of the extendingportion 114A of thedrain electrode 114 along direction A2 within the overlapping region] and [the length L of thecurved portion 146B along direction A2]. The vertical axis represents the light transmittance of thepixel unit 108. It has been shown that when the extendingportion 114A of thedrain electrode 114 does not overlap thecurved portion 146B of the slit 146 (D2/L=0), the light transmittance of thepixel unit 108 is defined as 100%. When D2/L=0.5, the light transmittance of thepixel unit 108 is 99.69%. When the extendingportion 114A of thedrain electrode 114 completely shields thecurved portion 146B of the slit 146 (D2/L=1), the light transmittance of thepixel unit 108 is 98.92%. - In addition, when the light transmittance is decreased by 0.5%, D2/L is 0.65, and the light transmittance is 99.50%. The maximum value of length D2 is the maximum value of length L (4 μm) times 0.65, which is 2.6 μm. As shown in
FIG. 2A , the maximum value of distance D3 between thefirst edge 116E of thegate electrode 116 and the second edge 114AE of the extendingportion 114A along direction A2 is the maximum value of the above length D2 (2.6 μm) plus the maximum value of distance D1 (5 μm), which is about 7.6 μm. -
FIG. 3C is a diagram showing the relationship between the length of the extending portion of the drain electrode within the overlapping region and the contrast ratio in accordance with some embodiments of the present disclosure. As shown inFIG. 3C , the horizontal axis represents the ratio of [the length D2 of the extendingportion 114A of thedrain electrode 114 along direction A2 within the overlapping region] and [the length L of thecurved portion 146B along direction A2]. The vertical axis represents the contrast ratio of thepixel unit 108. It has been shown that when the extendingportion 114A of thedrain electrode 114 does not overlap thecurved portion 146B of the slit 146 (D2/L=0), the contrast ratio of thepixel unit 108 is defined as 100%. When D2/L=0.5, the contrast ratio of thepixel unit 108 is 100.96%. When the extendingportion 114A of thedrain electrode 114 completely shields thecurved portion 146B of the slit 146 (D2/L=1), the contrast ratio of thepixel unit 108 is 101.49%. - In addition, when the value of D2/L is within a range from 0 to 0.2, the increase of one unit of the D2/L value may increase the contrast ratio the most. When D2/L=0.2, the contrast ratio is 100.45%, and the minimum value of length D2 is the minimum value of length L (2 μm) times 0.2, which is 0.4 μm. As shown in
FIG. 2A , the minimum value of distance D3 between thefirst edge 116E of thegate electrode 116 and the second edge 114AE of the extendingportion 114A along direction A2 is the minimum value of the above length D2 (0.4 μm) plus the minimum value of distance D1 (3 μm), which is about 3.4 μm. - Therefore, when the minimum distance D3 between the
first edge 116E of thegate electrode 116 and the second edge 114AE of the extendingportion 114A along direction A2 is greater than 0 μm and is smaller than 8.2 μm, the contrast ratio of the device is increased while the aperture ratio and the light transmittance are merely decreased a little. In particular, when the minimum distance D3 between thefirst edge 116E of thegate electrode 116 and the second edge 114AE of the extendingportion 114A along direction A2 is greater than 3.4 μm and is smaller than 7.6 μm, the contrast ratio of the device is greatly increased while the aperture ratio and the light transmittance are barely decreased. - Furthermore, when the area of the overlapping region between the extending
portion 114A of thedrain electrode 114 and thecurved portion 146B of theslit 146 is about 0.2 times to about 0.8 times the area of thecurved portion 146B, such as being between about 0.3 times and about 0.7 times the area of thecurved portion 146B, the contrast ratio of the device is also greatly increased while the aperture ratio and the light transmittance are barely decreased. - Moreover, according to some embodiments, if the distance D3 is greater than 8.2 μm, or the area of the overlapping region is 0.8 times larger than the area of the
curved portion 146B, then the aperture ratio and the light transmittance may be decreased excessively. - In accordance with some embodiments of the present disclosure, as shown in
FIG. 2A , the minimum width W1 of the extendingportion 114A of thedrain electrode 114 is greater than the maximum width W2 of theslit 146. As a result, the extendingportion 114A of thedrain electrode 114 may completely shield light leaks at thecurved portion 146B of theslit 146. Thus, the contrast ratio of the device may be increased. - It should be noted that the embodiments shown in
FIGS. 1, 2A, 2B, and 2C are merely used for illustration, and the scope of the present application is not intended to be limited to these particular embodiments. Except for the embodiments shown inFIGS. 1, 2A, 2B , and 2C, the common electrode and the pixel electrode of the present disclosure may be arranged in other ways, for example, as per the embodiment shown inFIG. 4 . The scope of the present disclosure is not limited to the embodiments ofFIGS. 1, 2A, 2B, and 2C . - It should be noted that the same or similar elements or layers in above and below contexts are represented by the same or similar reference numerals. The materials, manufacturing methods and functions of these elements or layers are the same or similar to those described above, and thus will not be repeated herein.
-
FIG. 4 is a cross-sectional view of adisplay device 400 in accordance with another embodiment of the present disclosure. The difference between the embodiments shown inFIG. 4 andFIG. 2B is that thecommon electrode 124 is disposed on thepixel electrode 128; thecommon electrode 124 has the above-mentionedslit 146; and thepixel electrode 128 is disposed between twodata lines 106 in accordance with the embodiment ofFIG. 4 . - It should be noted that the embodiments shown in
FIGS. 1, 2A, 2B, and 2C are merely used for illustration, and the scope of the present application is not intended to be limited to these particular embodiments. Except for the embodiments shown inFIGS. 1, 2A, 2B , and 2C, the scan lines of the present disclosure may have other patterns, for example, as in the embodiment shown inFIG. 5 . The scope of the present disclosure is not limited to the embodiments ofFIGS. 1, 2A, 2B, and 2C . -
FIG. 5 is a top view of adisplay device 500 in accordance with another embodiment of the present disclosure. It should be noted that the same or similar elements or layers in above and below contexts are represented by the same or similar reference numerals. The materials, manufacturing methods and functions of these elements or layers are the same or similar to those described above, and thus will not be repeated herein. The difference between the embodiments shown inFIG. 5 andFIG. 2B is that the scan line (gate line) 150 has a curved shape in the embodiment ofFIG. 5 . However, the scan line (gate line) 150 also extends along direction A1, which is the same as the scan line (gate line) 104 inFIG. 1 . - To summarize the above, in accordance with the embodiments of the present disclosure, the drain electrode overlaps the curved portion (or the end portion) of the slit of the pixel electrode or the common electrode so as to shield light leaks of the curved portion. Moreover, in some embodiments, the aperture ratio or the contrast rate of the display device is improved.
- In addition, it should be noted that the drain and source mentioned above in the present disclosure are switchable since the definition of the drain and source is related to the voltage connecting thereto.
- Note that the above element sizes, element parameters, and element shapes are not limitations of the present disclosure. One of ordinary skill in the art can adjust these settings or values according to different requirements. It should be understood that the transistor substrate and the display device manufactured from the transistor substrate of the present disclosure are not limited to the configurations of
FIGS. 1 to 5 . The present disclosure may merely include any one or more features of any one or more embodiments ofFIGS. 1 to 5 . In other words, not all of the features shown in the figures should be implemented in the transistor substrate and the display device manufactured from the transistor substrate of the present disclosure. - Although some embodiments of the present disclosure and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. For example, it will be readily understood by one of ordinary skill in the art that many of the features, functions, processes, and materials described herein may be varied while remaining within the scope of the present disclosure. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
Claims (11)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/133,936 US11460741B2 (en) | 2016-04-28 | 2020-12-24 | Transistor substrate and display device manufactured from the transistor substrate |
US17/823,570 US11719987B2 (en) | 2016-04-28 | 2022-08-31 | Transistor substrate and display device manufactured from the transistor substrate |
US18/336,286 US20230350251A1 (en) | 2016-04-28 | 2023-06-16 | Transistor substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105113233A TWI614556B (en) | 2016-04-28 | 2016-04-28 | Transistor substrate and display device manufactured from the transistor substrate |
TW105113233 | 2016-04-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/133,936 Continuation US11460741B2 (en) | 2016-04-28 | 2020-12-24 | Transistor substrate and display device manufactured from the transistor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
US20170315415A1 true US20170315415A1 (en) | 2017-11-02 |
Family
ID=60157424
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/498,551 Abandoned US20170315415A1 (en) | 2016-04-28 | 2017-04-27 | Transistor substrate and display device manufactured from the transistor substrate |
US17/133,936 Active US11460741B2 (en) | 2016-04-28 | 2020-12-24 | Transistor substrate and display device manufactured from the transistor substrate |
US17/823,570 Active US11719987B2 (en) | 2016-04-28 | 2022-08-31 | Transistor substrate and display device manufactured from the transistor substrate |
US18/336,286 Pending US20230350251A1 (en) | 2016-04-28 | 2023-06-16 | Transistor substrate |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/133,936 Active US11460741B2 (en) | 2016-04-28 | 2020-12-24 | Transistor substrate and display device manufactured from the transistor substrate |
US17/823,570 Active US11719987B2 (en) | 2016-04-28 | 2022-08-31 | Transistor substrate and display device manufactured from the transistor substrate |
US18/336,286 Pending US20230350251A1 (en) | 2016-04-28 | 2023-06-16 | Transistor substrate |
Country Status (3)
Country | Link |
---|---|
US (4) | US20170315415A1 (en) |
CN (1) | CN107390438B (en) |
TW (1) | TWI614556B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113655649A (en) * | 2021-07-22 | 2021-11-16 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof, display device, display system and display method |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI614556B (en) * | 2016-04-28 | 2018-02-11 | 群創光電股份有限公司 | Transistor substrate and display device manufactured from the transistor substrate |
CN109581761B (en) * | 2018-12-29 | 2022-05-27 | 厦门天马微电子有限公司 | Array substrate and display device |
CN114911100A (en) * | 2021-02-09 | 2022-08-16 | 群创光电股份有限公司 | Display device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090322995A1 (en) * | 2008-06-30 | 2009-12-31 | Mitsubishi Electric Corporation | Liquid crystal display device and method of manufacturing the same |
US8427617B2 (en) * | 2008-09-29 | 2013-04-23 | Sony Corporation | Transverse electric field mode liquid crystal display panel capable of preventing bright regions of the circumferences of slit-shaped openings of an upper electrode |
US20140063429A1 (en) * | 2012-08-31 | 2014-03-06 | Samsung Display Co., Ltd | Liquid crystal display |
US20150160498A1 (en) * | 2013-06-27 | 2015-06-11 | Beijing Boe Display Technology Co., Ltd. | Transparent electrode, array substrate and liquid crystal display device |
US20150212375A1 (en) * | 2014-01-24 | 2015-07-30 | Samsung Display Co., Ltd. | Liquid crystal display |
US20170146853A1 (en) * | 2015-11-24 | 2017-05-25 | Samsung Display Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3556364B2 (en) * | 1995-12-27 | 2004-08-18 | 富士通ディスプレイテクノロジーズ株式会社 | Active matrix type liquid crystal display panel and projection type display device |
KR100364836B1 (en) * | 2001-02-09 | 2002-12-16 | 엘지.필립스 엘시디 주식회사 | Liquid Crystal Display Device |
JP4717672B2 (en) * | 2006-03-17 | 2011-07-06 | ソニー株式会社 | Liquid crystal device and electronic device |
JP4329828B2 (en) * | 2007-02-26 | 2009-09-09 | エプソンイメージングデバイス株式会社 | Liquid crystal display |
JP2008209858A (en) * | 2007-02-28 | 2008-09-11 | Seiko Epson Corp | Liquid crystal device and electronic equipment |
KR101374078B1 (en) * | 2007-06-04 | 2014-03-13 | 삼성디스플레이 주식회사 | Display substrate, method of manufacturing the same and display apparatus having the same |
TWI356231B (en) * | 2007-08-31 | 2012-01-11 | Au Optronics Corp | A liquid crystal display with contrast improvement |
TWM415321U (en) * | 2011-02-10 | 2011-11-01 | Chunghwa Picture Tubes Ltd | Display panel |
KR101844015B1 (en) * | 2011-02-24 | 2018-04-02 | 삼성디스플레이 주식회사 | Liquid crystal display |
TWI681233B (en) * | 2012-10-12 | 2020-01-01 | 日商半導體能源研究所股份有限公司 | Liquid crystal display device, touch panel and method for manufacturing liquid crystal display device |
WO2015045581A1 (en) * | 2013-09-26 | 2015-04-02 | シャープ株式会社 | Display component and display device |
KR102130545B1 (en) * | 2013-11-27 | 2020-07-07 | 삼성디스플레이 주식회사 | Liquid crystal display |
JP6497876B2 (en) * | 2014-09-01 | 2019-04-10 | 三菱電機株式会社 | Liquid crystal display panel and manufacturing method thereof |
CN105045013A (en) * | 2015-09-15 | 2015-11-11 | 京东方科技集团股份有限公司 | Pixel array, display panel, and display apparatus |
JP2017090502A (en) * | 2015-11-02 | 2017-05-25 | 株式会社ジャパンディスプレイ | Liquid crystal display device |
CN105552028A (en) * | 2016-02-18 | 2016-05-04 | 京东方科技集团股份有限公司 | Array substrate, fabrication method thereof, display panel and display device |
TWI614556B (en) * | 2016-04-28 | 2018-02-11 | 群創光電股份有限公司 | Transistor substrate and display device manufactured from the transistor substrate |
FR3051053B1 (en) * | 2016-05-03 | 2018-05-25 | Essilor International | TRANSPARENT ACTIVE MATRIX WITH DESORDONNE NETWORK AND OPTICAL COMPONENT INTEGRATING SUCH A MATRIX |
-
2016
- 2016-04-28 TW TW105113233A patent/TWI614556B/en active
-
2017
- 2017-04-27 US US15/498,551 patent/US20170315415A1/en not_active Abandoned
- 2017-04-28 CN CN201710292146.1A patent/CN107390438B/en active Active
-
2020
- 2020-12-24 US US17/133,936 patent/US11460741B2/en active Active
-
2022
- 2022-08-31 US US17/823,570 patent/US11719987B2/en active Active
-
2023
- 2023-06-16 US US18/336,286 patent/US20230350251A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090322995A1 (en) * | 2008-06-30 | 2009-12-31 | Mitsubishi Electric Corporation | Liquid crystal display device and method of manufacturing the same |
US8427617B2 (en) * | 2008-09-29 | 2013-04-23 | Sony Corporation | Transverse electric field mode liquid crystal display panel capable of preventing bright regions of the circumferences of slit-shaped openings of an upper electrode |
US20140063429A1 (en) * | 2012-08-31 | 2014-03-06 | Samsung Display Co., Ltd | Liquid crystal display |
US20150160498A1 (en) * | 2013-06-27 | 2015-06-11 | Beijing Boe Display Technology Co., Ltd. | Transparent electrode, array substrate and liquid crystal display device |
US20150212375A1 (en) * | 2014-01-24 | 2015-07-30 | Samsung Display Co., Ltd. | Liquid crystal display |
US20170146853A1 (en) * | 2015-11-24 | 2017-05-25 | Samsung Display Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113655649A (en) * | 2021-07-22 | 2021-11-16 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof, display device, display system and display method |
Also Published As
Publication number | Publication date |
---|---|
TW201738642A (en) | 2017-11-01 |
US11460741B2 (en) | 2022-10-04 |
US20220413348A1 (en) | 2022-12-29 |
US20230350251A1 (en) | 2023-11-02 |
CN107390438B (en) | 2020-11-06 |
TWI614556B (en) | 2018-02-11 |
CN107390438A (en) | 2017-11-24 |
US20210149263A1 (en) | 2021-05-20 |
US11719987B2 (en) | 2023-08-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11719987B2 (en) | Transistor substrate and display device manufactured from the transistor substrate | |
CN106356377B (en) | Touch control display apparatus | |
US11567374B2 (en) | Liquid crystal display device | |
US20160357286A1 (en) | Display device | |
US10281778B2 (en) | Liquid crystal display device | |
US20160357291A1 (en) | Touch display device | |
US10061171B2 (en) | Thin film transistor substrate | |
US9389467B2 (en) | Liquid crystal display | |
US10228787B2 (en) | Display device | |
TWI582658B (en) | Display device | |
US10170501B2 (en) | Display panel | |
US20140092352A1 (en) | Liquid crystal display device | |
US10459277B2 (en) | Display device | |
TWI591524B (en) | Display device | |
US9929106B2 (en) | Display device and active element substrate | |
JP6452789B2 (en) | Liquid crystal display |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: INNOLUX CORPORATION, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YANG, YUNG-SHUN;LIN, CHUN-LIANG;CHEN, YI-CHING;AND OTHERS;REEL/FRAME:042159/0748 Effective date: 20170420 |
|
STCV | Information on status: appeal procedure |
Free format text: NOTICE OF APPEAL FILED |
|
STCV | Information on status: appeal procedure |
Free format text: APPEAL BRIEF (OR SUPPLEMENTAL BRIEF) ENTERED AND FORWARDED TO EXAMINER |
|
STCV | Information on status: appeal procedure |
Free format text: EXAMINER'S ANSWER TO APPEAL BRIEF MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |