US20170243949A1 - Liquid crystal display panel, array substrate and manufacturing method for thin-film transistor - Google Patents

Liquid crystal display panel, array substrate and manufacturing method for thin-film transistor Download PDF

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US20170243949A1
US20170243949A1 US15/591,420 US201715591420A US2017243949A1 US 20170243949 A1 US20170243949 A1 US 20170243949A1 US 201715591420 A US201715591420 A US 201715591420A US 2017243949 A1 US2017243949 A1 US 2017243949A1
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metal layer
layer
electrode
thin film
film transistor
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Dongzi Gao
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Definitions

  • the present invention relates to liquid crystal display technology field, and more particularly to a liquid crystal display panel, an array substrate and a manufacturing method for a thin-film transistor of the both.
  • a Thin-Film-Transistor is connected with a pixel electrode, and a gate electrode of the TFT is connected with a gate line of a liquid crystal display panel in order to turn on the TFT, when the gate electrode receives a gate driving signal.
  • a source electrode of the TFT is connected with a data line of the liquid crystal display panel in order to transfer a received grayscale voltage to the pixel electrode to perform an image display.
  • the panel supplier generally utilizes aluminum (Al) and molybdenum (Mo) metal to manufacture the TFT.
  • Al aluminum
  • Mo molybdenum
  • a molybdenum metal layer is disposed on an aluminum metal layer.
  • the aluminum metal layer is designed to be thicker.
  • the melting point of the aluminum layer is lower (660° C.), and a high temperature environment required in the manufacturing process makes atoms of the aluminum metal layer to be extruded with each other so that the aluminum metal layer may easily generate a hillock because of deformation caused by the extruding.
  • the hillock is serious, short-circuiting will be generated among the gate electrode, a source electrode and a drain electrode of the TFT, affecting image display quality of the liquid crystal display panel.
  • embodiments of the present invention provides a liquid crystal display panel, an array substrate and a manufacturing method for a thin film transistor, which can inhibit the hillock generated by the deformation of the aluminum metal layer in a high temperature environment in order to ensure the display quality of an image.
  • a technology solution adopted by the present invention is to provide: a manufacturing method for a thin film transistor, comprising step of: providing a substrate; forming a first metal layer on the substrate, wherein the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially; patterning the first metal layer in order to form a gate electrode of a thin film transistor; sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode; forming a second metal layer on the ohmic contact layer; and patterning the second metal layer in order to form a source electrode and a drain electrode of the thin film transistor.
  • the step of forming a first metal layer on the substrate comprises step of: utilizing a plasma to bombard an aluminum target for sputtering aluminum onto the substrate; injecting oxygen such that when aluminum is sputtering onto the substrate, simultaneously, the aluminum perform an oxidation reaction with the oxygen in order to form the aluminum oxide layer; and forming the molybdenum metal layer on the aluminum oxide layer.
  • the second metal layer also includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • the method further comprises: forming a passivation layer on the source electrode and the drain electrode; forming a contact hole on the passivation layer in order to reveal the source electrode or the drain electrode; and forming a pixel electrode on the passivation layer, and the pixel electrode is electrically connected with one of the source electrode and the drain electrode through the contact hole.
  • a dry etching method is utilized to form the contact hole.
  • the substrate includes a base plate and an oxide layer formed on the base plate.
  • an array substrate comprising: a substrate; a thin-film-transistor array having multiple thin film transistors; and a pixel electrode; wherein, a gate electrode of the thin film transistor includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially, the pixel electrode is electrically connected with one of a source electrode and a drain electrode of the thin film transistor through a contact hole.
  • the source electrode and the drain electrode include an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • the thin film transistor further includes a gate insulation layer formed on the gate electrode, a semiconductor layer formed on the gate insulation layer and an ohmic contact layer formed on the semiconductor layer, a source electrode and a drain electrode formed on the ohmic contact layer.
  • a further technology solution adopted by the present invention is to provide: a liquid crystal display panel, comprising: an array substrate, including: a substrate; a thin-film-transistor array having multiple thin film transistors; and a pixel electrode; wherein, a gate electrode of the thin film transistor includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially, the pixel electrode is electrically connected with one of a source electrode and a drain electrode of the thin film transistor through a contact hole.
  • the source electrode and the drain electrode include an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • the thin film transistor further includes a gate insulation layer formed on the gate electrode, a semiconductor layer formed on the gate insulation layer and an ohmic contact layer formed on the semiconductor layer, a source electrode and a drain electrode formed on the ohmic contact layer.
  • an array substrate and a manufacturing method for a thin film transistor through adding the aluminum oxide layer in manufacturing the aluminum metal layer and the molybdenum metal layer of the gate electrode, because the melting point and hardness of aluminum oxide is far higher than aluminum, the hillock generated by the deformation of the aluminum metal layer in a high temperature environment can be inhibited so that the short circuit generated among the gate electrode, the source electrode and the drain electrode of the thin film transistor can be avoided in order to ensure the display quality of an image.
  • FIG. 1 is a flowchart of a manufacturing method for a thin film transistor according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of forming a gate electrode of the thin film transistor according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of forming a source electrode and a drain electrode of the thin film transistor according to an embodiment of the present invention.
  • FIG. 4 is a flowchart of a manufacturing method for the thin film transistor according to another embodiment of the present invention.
  • FIG. 1 is a flowchart of a manufacturing method for a thin film transistor (TFT) according to an embodiment of the present invention. As shown in FIG. 1 , the manufacturing method for the TFT includes following steps:
  • Step S 11 providing a substrate.
  • the substrate 11 is used for forming an array substrate of a liquid crystal display panel.
  • the substrate 11 can be a glass substrate, a plastic substrate or a flexible substrate.
  • the substrate 11 can also include a base plate and an oxide layer formed on the base plate.
  • the oxide layer includes a SiNx layer, a SiOx layer or a combination of the SiNx layer and the SiOx layer.
  • the oxide layer is used for prevent impurities in the base plate from diffusing upward so as to affect the quality of a low-temperature polysilicon (LTPS) thin film formed subsequently.
  • the SiNx layer and the SiOx layer can be formed by the chemical vapor deposition (CVD) method or the plasma enhanced chemical vapor deposition (PECVD) method, and can also be formed by the sputtering method, the vacuum deposition method or the low pressure chemical vapor deposition method, and so on, but the present invention is not limited.
  • Step S 12 forming a first metal layer on the substrate, and the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • Step S 13 patterning the first metal layer in order to form a gate electrode of the thin film transistor.
  • etching the first metal layer 12 to form multiple gate electrodes of the liquid crystal display panel wherein utilizing an etching solution containing phosphoric acid, nitric acid, acetic acid and deionized water to perform etching the first metal layer 12 .
  • an etching solution containing phosphoric acid, nitric acid, acetic acid and deionized water to perform etching the first metal layer 12 .
  • a dry etching method can also be utilized.
  • Step S 14 sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode.
  • Step S 15 forming a second metal layer on the ohmic contact layer.
  • Step S 16 patterning the second metal layer in order to form a source electrode and a drain electrode.
  • the present embodiment forms the gate insulation layer 125 , the semiconductor layer 126 , the ohmic contact layer 127 , the source electrode 128 and the drain electrode 129 shown in FIG. 3 on the gate electrode 124 as shown in FIG. 2
  • Step S 16 a same or a different patterning method for the first metal layer 12 can be utilized.
  • the manufacturing method for the thin film transistor of the present invention through adding the aluminum oxide layer 122 in manufacturing the aluminum metal layer 121 and the molybdenum metal layer 123 of the gate electrode 124 , because the melting point and hardness of aluminum oxide is far higher than aluminum, the hillock generated by the deformation of the aluminum metal layer 121 in a high temperature environment can be inhibited so that the short circuit generated among the gate electrode 124 , the source electrode 128 and the drain electrode 129 of the thin film transistor can be avoided in order to ensure the display quality of an image.
  • the manufacturing method of the thin film transistor further includes following steps:
  • each gate electrode 124 of a TFT array is correspondingly and electrically connected with a gate line formed on the substrate 11 (an array substrate).
  • Each source electrode 128 is correspondingly and electrically connected with a data line formed in the substrate 11 (an array substrate).
  • the gate lines and the data lines are perpendicularly intersected in order to form a pixel display region where the pixel electrode 132 is located.
  • the contact hole 131 can be formed on the passivation layer 130 in order to reveal the source electrode 128 such that the pixel electrode 132 is electrically connected with the source electrode 128 through the contact hole 131 .
  • the drain electrode 129 is correspondingly and electrically connected with the data line formed on the array substrate.
  • FIG. 4 is a flowchart of a manufacturing method for a thin film transistor according to another embodiment of the present invention.
  • a material which is the same as the gate electrode 124 is used to manufacture the source electrode 128 and the drain electrode 129 of the thin film transistor. That is, the second metal layer used for manufacturing the source electrode 128 and the drain electrode 129 also include the aluminum metal layer 121 , the aluminum oxide layer 122 and the molybdenum metal layer 123 stacked sequentially.
  • the manufacturing method of the thin film transistor of the present embodiment comprises the following steps:
  • Step S 41 providing a substrate.
  • Step S 42 forming a first metal layer on the substrate, wherein the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • Step S 43 patterning the first metal layer in order to form a gate electrode of the thin film transistor.
  • Step S 44 sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode.
  • Step S 45 forming a second metal layer on the ohmic contact layer, wherein the second metal layer also includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • Step S 46 patterning the second metal layer in order to form a source electrode and a drain electrode.
  • the embodiment of the present invention further provides an array substrate and a liquid crystal display panel utilizing the thin film transistor manufactured by the above manufacturing method. Accordingly, the same beneficial effects are provided.
  • an array substrate and a manufacturing method for a thin film transistor through adding the aluminum oxide layer in manufacturing the aluminum metal layer and the molybdenum metal layer of the gate electrode, because the melting point and hardness of aluminum oxide is far higher than aluminum, the hillock generated by the deformation of the aluminum metal layer in a high temperature environment can be inhibited so that the short circuit generated among the gate electrode, the source electrode and the drain electrode of the thin film transistor can be avoided in order to ensure the display quality of an image.

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  • Microelectronics & Electronic Packaging (AREA)
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  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Thin Film Transistor (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

An LCD panel, an array substrate and a manufacturing method for TFT are disclosed. The method includes: providing a substrate; forming a first metal layer on the substrate, in which the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially; patterning the first metal layer to form a gate electrode of a TFT; sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode; forming a second metal layer on the ohmic contact layer; and patterning the second metal layer to form a source electrode and a drain electrode of the TFT. Hillock generated by the aluminum metal layer in a high temperature environment can be inhibited so as to avoid short-circuiting generated among the gate, the source and the drain electrodes of the TFT to ensure the display quality of an image.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This is a divisional application of co-pending patent application Ser. No. 14/893,521, filed on Nov. 23, 2015, which is a national stage of PCT Application Number PCT/CN2015/075765, filed on Apr. 2, 2015, claiming foreign priority of Chinese Patent Application Number 201510136465.4, filed on Mar. 26, 2015.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to liquid crystal display technology field, and more particularly to a liquid crystal display panel, an array substrate and a manufacturing method for a thin-film transistor of the both.
  • 2. Description of Related Art
  • A Thin-Film-Transistor (TFT) is connected with a pixel electrode, and a gate electrode of the TFT is connected with a gate line of a liquid crystal display panel in order to turn on the TFT, when the gate electrode receives a gate driving signal. A source electrode of the TFT is connected with a data line of the liquid crystal display panel in order to transfer a received grayscale voltage to the pixel electrode to perform an image display. Currently, the panel supplier generally utilizes aluminum (Al) and molybdenum (Mo) metal to manufacture the TFT. Generally, a molybdenum metal layer is disposed on an aluminum metal layer. Besides, in order to decrease a resistance of the TFT, the aluminum metal layer is designed to be thicker. However, the melting point of the aluminum layer is lower (660° C.), and a high temperature environment required in the manufacturing process makes atoms of the aluminum metal layer to be extruded with each other so that the aluminum metal layer may easily generate a hillock because of deformation caused by the extruding. When the hillock is serious, short-circuiting will be generated among the gate electrode, a source electrode and a drain electrode of the TFT, affecting image display quality of the liquid crystal display panel.
    • SUMMARY OF THE INVENTION
  • Accordingly, embodiments of the present invention provides a liquid crystal display panel, an array substrate and a manufacturing method for a thin film transistor, which can inhibit the hillock generated by the deformation of the aluminum metal layer in a high temperature environment in order to ensure the display quality of an image.
  • A technology solution adopted by the present invention is to provide: a manufacturing method for a thin film transistor, comprising step of: providing a substrate; forming a first metal layer on the substrate, wherein the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially; patterning the first metal layer in order to form a gate electrode of a thin film transistor; sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode; forming a second metal layer on the ohmic contact layer; and patterning the second metal layer in order to form a source electrode and a drain electrode of the thin film transistor.
  • In the method, the step of forming a first metal layer on the substrate comprises step of: utilizing a plasma to bombard an aluminum target for sputtering aluminum onto the substrate; injecting oxygen such that when aluminum is sputtering onto the substrate, simultaneously, the aluminum perform an oxidation reaction with the oxygen in order to form the aluminum oxide layer; and forming the molybdenum metal layer on the aluminum oxide layer.
  • In the method, the second metal layer also includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • In the method, the method further comprises: forming a passivation layer on the source electrode and the drain electrode; forming a contact hole on the passivation layer in order to reveal the source electrode or the drain electrode; and forming a pixel electrode on the passivation layer, and the pixel electrode is electrically connected with one of the source electrode and the drain electrode through the contact hole.
  • In the method, a dry etching method is utilized to form the contact hole.
  • In the method, the substrate includes a base plate and an oxide layer formed on the base plate.
  • Another technology solution adopted by the present invention is to provide: an array substrate, comprising: a substrate; a thin-film-transistor array having multiple thin film transistors; and a pixel electrode; wherein, a gate electrode of the thin film transistor includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially, the pixel electrode is electrically connected with one of a source electrode and a drain electrode of the thin film transistor through a contact hole.
  • In the array substrate, the source electrode and the drain electrode include an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • In the array substrate, the thin film transistor further includes a gate insulation layer formed on the gate electrode, a semiconductor layer formed on the gate insulation layer and an ohmic contact layer formed on the semiconductor layer, a source electrode and a drain electrode formed on the ohmic contact layer.
  • A further technology solution adopted by the present invention is to provide: a liquid crystal display panel, comprising: an array substrate, including: a substrate; a thin-film-transistor array having multiple thin film transistors; and a pixel electrode; wherein, a gate electrode of the thin film transistor includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially, the pixel electrode is electrically connected with one of a source electrode and a drain electrode of the thin film transistor through a contact hole.
  • In the liquid crystal display panel, the source electrode and the drain electrode include an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • In the liquid crystal display panel, the thin film transistor further includes a gate insulation layer formed on the gate electrode, a semiconductor layer formed on the gate insulation layer and an ohmic contact layer formed on the semiconductor layer, a source electrode and a drain electrode formed on the ohmic contact layer.
  • In a liquid crystal display panel, an array substrate and a manufacturing method for a thin film transistor according to the embodiments of the present invention, through adding the aluminum oxide layer in manufacturing the aluminum metal layer and the molybdenum metal layer of the gate electrode, because the melting point and hardness of aluminum oxide is far higher than aluminum, the hillock generated by the deformation of the aluminum metal layer in a high temperature environment can be inhibited so that the short circuit generated among the gate electrode, the source electrode and the drain electrode of the thin film transistor can be avoided in order to ensure the display quality of an image.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a flowchart of a manufacturing method for a thin film transistor according to an embodiment of the present invention;
  • FIG. 2 is a schematic diagram of forming a gate electrode of the thin film transistor according to an embodiment of the present invention;
  • FIG. 3 is a schematic diagram of forming a source electrode and a drain electrode of the thin film transistor according to an embodiment of the present invention; and
  • FIG. 4 is a flowchart of a manufacturing method for the thin film transistor according to another embodiment of the present invention.
    •  DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • The following content combines with the drawings and the embodiment for describing the present invention in detail. It is obvious that the following embodiments are only some embodiments of the present invention. For the person of ordinary skill in the art without creative effort, the other embodiments obtained thereby are still covered by the present invention.
  • FIG. 1 is a flowchart of a manufacturing method for a thin film transistor (TFT) according to an embodiment of the present invention. As shown in FIG. 1, the manufacturing method for the TFT includes following steps:
  • Step S11: providing a substrate.
  • As shown in FIG. 2, the substrate 11 is used for forming an array substrate of a liquid crystal display panel. The substrate 11 can be a glass substrate, a plastic substrate or a flexible substrate.
  • Of course, the substrate 11 can also include a base plate and an oxide layer formed on the base plate. The oxide layer includes a SiNx layer, a SiOx layer or a combination of the SiNx layer and the SiOx layer. The oxide layer is used for prevent impurities in the base plate from diffusing upward so as to affect the quality of a low-temperature polysilicon (LTPS) thin film formed subsequently. The SiNx layer and the SiOx layer can be formed by the chemical vapor deposition (CVD) method or the plasma enhanced chemical vapor deposition (PECVD) method, and can also be formed by the sputtering method, the vacuum deposition method or the low pressure chemical vapor deposition method, and so on, but the present invention is not limited.
  • Step S12: forming a first metal layer on the substrate, and the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • As shown in FIG. 2, the way of forming a first metal layer on the substrate can be: firstly, utilizing a plasma to bombard an aluminum target for sputtering aluminum onto the substrate 11 (or the above described oxide layer) in order to form the aluminum metal layer 121; then, when the step of sputtering aluminum onto the substrate 11 is almost completed, injecting an appropriate amount of oxygen such that when aluminum is sputtering onto the substrate, simultaneously, the aluminum perform an oxidation reaction with the oxygen in order to form the aluminum oxide layer 122 on a surface of the aluminum metal layer 121; finally, forming the molybdenum metal layer 123 on a surface of the aluminum oxide layer 122. The embodiment of the present invention can utilize a magnetron sputtering method to form the aluminum metal layer 121 and the molybdenum metal layer 123 on the substrate 11 (or the above described oxide layer).
  • Step S13: patterning the first metal layer in order to form a gate electrode of the thin film transistor.
  • Specifically, etching the first metal layer 12 to form multiple gate electrodes of the liquid crystal display panel, wherein utilizing an etching solution containing phosphoric acid, nitric acid, acetic acid and deionized water to perform etching the first metal layer 12. Of course, a dry etching method can also be utilized.
  • Step S14: sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode.
  • Step S15: forming a second metal layer on the ohmic contact layer.
  • Step S16: patterning the second metal layer in order to form a source electrode and a drain electrode.
  • The present embodiment forms the gate insulation layer 125, the semiconductor layer 126, the ohmic contact layer 127, the source electrode 128 and the drain electrode 129 shown in FIG. 3 on the gate electrode 124 as shown in FIG. 2
  • In Step S16, a same or a different patterning method for the first metal layer 12 can be utilized.
  • In the manufacturing method for the thin film transistor of the present invention, through adding the aluminum oxide layer 122 in manufacturing the aluminum metal layer 121 and the molybdenum metal layer 123 of the gate electrode 124, because the melting point and hardness of aluminum oxide is far higher than aluminum, the hillock generated by the deformation of the aluminum metal layer 121 in a high temperature environment can be inhibited so that the short circuit generated among the gate electrode 124, the source electrode 128 and the drain electrode 129 of the thin film transistor can be avoided in order to ensure the display quality of an image.
  • Subsequently, combined with the embodiment shown in FIG. 3, the manufacturing method of the thin film transistor further includes following steps:
  • Forming a passivation layer 130 on the source electrode 128 and the drain electrode 129.
  • Forming a contact hole 131 on the passivation layer 130 in order to reveal the drain electrode 129, wherein, preferably, a dry etching method is utilized to form the contact hole 131.
  • Forming a pixel electrode 132 on the passivation layer 130, and the pixel electrode 132 is electrically connected with the drain electrode 129 through the contact hole 131. Besides, each gate electrode 124 of a TFT array is correspondingly and electrically connected with a gate line formed on the substrate 11 (an array substrate). Each source electrode 128 is correspondingly and electrically connected with a data line formed in the substrate 11 (an array substrate). The gate lines and the data lines are perpendicularly intersected in order to form a pixel display region where the pixel electrode 132 is located.
  • In another embodiment, the contact hole 131 can be formed on the passivation layer 130 in order to reveal the source electrode 128 such that the pixel electrode 132 is electrically connected with the source electrode 128 through the contact hole 131. At this time, the drain electrode 129 is correspondingly and electrically connected with the data line formed on the array substrate.
  • FIG. 4 is a flowchart of a manufacturing method for a thin film transistor according to another embodiment of the present invention. The difference between the above embodiment and the present embodiment is: in the present embodiment, a material which is the same as the gate electrode 124 is used to manufacture the source electrode 128 and the drain electrode 129 of the thin film transistor. That is, the second metal layer used for manufacturing the source electrode 128 and the drain electrode 129 also include the aluminum metal layer 121, the aluminum oxide layer 122 and the molybdenum metal layer 123 stacked sequentially.
  • As shown in FIG. 4, the manufacturing method of the thin film transistor of the present embodiment comprises the following steps:
  • Step S41: providing a substrate.
  • Step S42: forming a first metal layer on the substrate, wherein the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • Step S43: patterning the first metal layer in order to form a gate electrode of the thin film transistor.
  • Step S44: sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode.
  • Step S45: forming a second metal layer on the ohmic contact layer, wherein the second metal layer also includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
  • Step S46: patterning the second metal layer in order to form a source electrode and a drain electrode.
  • The embodiment of the present invention further provides an array substrate and a liquid crystal display panel utilizing the thin film transistor manufactured by the above manufacturing method. Accordingly, the same beneficial effects are provided.
  • In summary, in a liquid crystal display panel, an array substrate and a manufacturing method for a thin film transistor according to the embodiment of the present invention, through adding the aluminum oxide layer in manufacturing the aluminum metal layer and the molybdenum metal layer of the gate electrode, because the melting point and hardness of aluminum oxide is far higher than aluminum, the hillock generated by the deformation of the aluminum metal layer in a high temperature environment can be inhibited so that the short circuit generated among the gate electrode, the source electrode and the drain electrode of the thin film transistor can be avoided in order to ensure the display quality of an image.
  • The above embodiments of the present invention are not used to limit the claims of this invention. Any use of the content in the specification or in the drawings of the present invention which produces equivalent structures or equivalent processes, or directly or indirectly used in other related technical fields is still covered by the claims in the present invention.

Claims (6)

What is claimed is:
1. An array substrate, comprising:
a substrate;
a thin-film-transistor array having multiple thin film transistors; and
a pixel electrode;
wherein a gate electrode of the thin film transistor includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially;
and the pixel electrode is electrically connected with one of a source electrode and a drain electrode of the thin film transistor through a contact hole.
2. The array substrate according to claim 1, wherein the source electrode and the drain electrode includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
3. The array substrate according to claim 1, wherein the thin film transistor further includes a gate insulation layer formed on the gate electrode, a semiconductor layer formed on the gate insulation layer and an ohmic contact layer formed on the semiconductor layer, a source electrode and a drain electrode formed on the ohmic contact layer.
4. A liquid crystal display panel, comprising:
an array substrate, comprising:
a substrate;
a thin-film-transistor array having multiple thin film transistors; and
a pixel electrode;
wherein a gate electrode of the thin film transistor includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially;
and the pixel electrode is electrically connected with one of a source electrode and a drain electrode of the thin film transistor through a contact hole.
5. The liquid crystal display panel according to claim 4, wherein the source electrode and the drain electrode include an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially.
6. The liquid crystal display panel according to claim 4, wherein the thin film transistor further includes a gate insulation layer formed on the gate electrode, a semiconductor layer formed on the gate insulation layer and an ohmic contact layer formed on the semiconductor layer, a source electrode and a drain electrode formed on the ohmic contact layer.
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