US20160315162A1 - Contact geometry having a gate silicon length decoupled from a transistor length - Google Patents
Contact geometry having a gate silicon length decoupled from a transistor length Download PDFInfo
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- US20160315162A1 US20160315162A1 US15/201,838 US201615201838A US2016315162A1 US 20160315162 A1 US20160315162 A1 US 20160315162A1 US 201615201838 A US201615201838 A US 201615201838A US 2016315162 A1 US2016315162 A1 US 2016315162A1
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- Prior art keywords
- gate
- layer
- metal layer
- semiconductor device
- insulating layer
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- 229910052710 silicon Inorganic materials 0.000 title claims description 18
- 239000010703 silicon Substances 0.000 title claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 138
- 229910052751 metal Inorganic materials 0.000 claims abstract description 88
- 239000002184 metal Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000007772 electrode material Substances 0.000 claims abstract description 30
- 125000006850 spacer group Chemical group 0.000 claims description 86
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 20
- 229910021332 silicide Inorganic materials 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 238000000034 method Methods 0.000 description 49
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- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
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- -1 HfSiO2 Inorganic materials 0.000 description 3
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- 238000000059 patterning Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 230000001939 inductive effect Effects 0.000 description 2
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- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010380 TiNi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
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Definitions
- the present disclosure relates to sophisticated semiconductor devices and the manufacturing of such devices, and in particular to device structures with a gate silicon length that is decoupled from the transistor length, and more specifically, while maintaining the transistor length.
- present-day integrated circuits are implemented by using a plurality of interconnected field effect transistors (FETS), also called metal oxide semiconductor field effect transistors (MOSFETS), or simply MOS transistors.
- FETS field effect transistors
- MOSFETS metal oxide semiconductor field effect transistors
- present-day integrated circuits are implemented by millions of MOS transistors which are formed on a chip having a given surface area.
- a current flow through a channel formed between the source and drain of a MOS transistor is controlled via a gate which is typically disposed over the channel region, independent from whether a PMOS transistor or an NMOS transistor is considered.
- a voltage is applied to the gate of the transistor and current flows through the channel when the applied voltage is greater than a threshold voltage which nontrivially depends on properties of a transistor such as size, material, etc.
- a critical dimension is generally represented by a width or length dimension of a line or space that has been identified as critical to the device under fabrication to operate properly and, furthermore, determines the device performance.
- the integration density depends on the dimensions of the MOS transistors representing the core building elements of ICs.
- An important parameter to characterize the transistor size is represented by the contacted poly pitch (CPP), which represents a measure for a distance between a source contact and a drain contact or measures a pitch between the source and drain of a transistor.
- CPP contacted poly pitch
- the CPP has been reduced down to about 80 nm. Downscaling of the CPP was accompanied by a scaling of the CDs of gate electrodes and, in particular, of length dimensions of gate electrodes.
- the gate length at a technology node may be roughly estimated to be on the order of a quarter of the CPP. For instance, a CPP of 192 nm has a gate CD of roughly 49 nm, a CPP of 130 nm has a gate CD of roughly 32 nm, and a CPP of 113 nm has a gate CD of roughly 28 nm.
- FIG. 1 shows a conventional semiconductor device structure during a middle-end-of-line (MEOL) fabrication process flow in which source contact structures, drain contact structures and gate electrode contact structures are formed.
- MEOL middle-end-of-line
- FIG. 1 shows a semiconductor substrate 100 and two gate electrode structures 120 and 140 disposed on a surface of the semiconductor substrate 100 .
- source and drain regions 112 , 114 and 116 are formed within the semiconductor substrate 100 adjacent to the respective gate electrode structure 120 and 140 without explicitly illustrating source and drain extensions and halo regions.
- the gate electrode structure 120 comprises a gate insulating layer 124 , a gate electrode layer 126 and a gate silicide 164 formed above the gate electrode layer 126 .
- a spacer structure 128 is formed at each side of the gate electrode structure 120 .
- the gate electrode structure 140 comprises a gate insulating layer 144 , a gate electrode layer 146 and a gate silicide 168 formed on the gate electrode layer 146 .
- Sidewall spacers 148 are formed at each side of the gate electrode structure 140 .
- a length dimension of the gate electrode structure 120 is schematically represented by an arrow 122 and substantially defines the length of a channel region extending between the source and drain regions 114 and 116 .
- the gate electrode structure 140 has a length dimension which is schematically represented by an arrow 142 and substantially defines the length of a channel region extending between the source and drain regions 112 and 114 .
- a contact 160 schematically represents a contact for contacting the source and drain of a transistor structure comprising one of the gate electrode structures 120 , 140 . The contact is disposed on the source or drain region 114 .
- a CPP is schematically depicted as a pitch between the source and drain regions 114 and 116 .
- the CPP rather represents a given quantity than a variable and, therefore, the CPP together with the channel length 122 defines the space for the contact 160 to land between two neighboring gate electrode structures 120 and 140 as may be understood from the illustration in FIG. 1 .
- a contact geometry such as represented in FIG. 1 , may be further parameterized by two parameters, “a” and “b” as schematically depicted in FIG. 1 .
- the parameter “b” characterizes the distance between the contact 160 and the gate electrode stack 124 , 126 of the gate electrode structure 120
- the parameter “a” characterizes the distance between the contact 160 and the gate silicide 164 .
- the gate width e.g., reference numeral 122 in FIG. 1
- the critical dimension CD of a contact is required to be as big as possible in order to define sufficient space for the contact (e.g., reference numeral 160 in FIG. 1 ) to land between two neighboring gate electrode structures (e.g., reference numerals 120 and 140 in FIG.
- the parameter “a” is expected to be smaller than the parameter “b” and, in particular, the parameter “a” is critical with regard to CA-PC leakage which depends on the distance between the gate silicide (e.g., reference numeral 164 in FIG. 1 ) formed on a gate electrode layer (e.g., reference numeral 126 in FIG. 1 ) and the contact (e.g., reference numeral 160 in FIG. 1 ) and the contact taper angle of the contact (e.g., reference numeral 160 in FIG. 1 ).
- the gate silicide e.g., reference numeral 164 in FIG. 1
- the contact e.g., reference numeral 160 in FIG. 1
- the contact taper angle of the contact e.g., reference numeral 160 in FIG. 1
- the contact resistance of the contact (e.g., reference numeral 160 in FIG. 1 ) is increased and, therefore, transistor structures having a high contact resistance are obtained.
- present-day semiconductor devices at small technology nodes increasingly suffer from increased yield loss and low device performance with a high device variability and fluctuations in device characteristics.
- a semiconductor device structure includes an active region positioned in a semiconductor substrate and a gate structure of a transistor positioned above the active region.
- the gate structure includes, among other things, a gate insulating layer, a gate metal layer positioned above the gate insulating layer and a trimmed gate electrode material layer positioned above the gate metal layer, wherein a length of at least a portion of the trimmed gate electrode material layer in a gate length direction of the transistor is less than a length of at least the gate metal layer in the gate length direction.
- a semiconductor device structure includes, among other things, an active region positioned in a semiconductor substrate and a gate structure of a transistor positioned above the active region.
- the gate structure includes a gate insulating layer, a gate metal layer positioned above the gate insulating layer and a gate electrode material layer positioned above the gate metal layer.
- the sidewall surfaces of the gate electrode material layer are laterally offset from respective sidewall surfaces of at least one of the gate metal layer and the gate insulating layer such that the gate electrode material layer covers a first upper surface portion of at least one of the gate metal layer and the gate insulating layer but does not cover a second upper surface portion of at least one of the gate metal layer and the gate insulating layer.
- the disclosed semiconductor device structure further includes a sidewall spacer positioned adjacent to sidewalls of the gate structure, the sidewall spacer covering at least the second upper surface portion and the respective sidewall surfaces of the at least one of the gate metal layer and the gate insulating layer.
- a semiconductor device structure includes, among other things, an active region positioned in a semiconductor substrate, a gate structure of a transistor positioned above the active region and a sidewall spacer positioned adjacent to sidewalls of the gate structure.
- the gate structure includes a gate insulating layer, a gate metal layer positioned above the gate insulating layer and a gate electrode material layer positioned above the gate metal layer.
- the gate insulating layer includes a high-k dielectric material and the gate electrode material layer includes one of amorphous silicon, polysilicon and silicon/germanium.
- a length of at least a portion of the gate electrode material layer in a gate length direction of the transistor is less than a length of each of the gate metal layer and the gate insulating layer in the gate length direction.
- the gate electrode material layer covers a first upper surface portion of the gate metal layer but does not cover a second upper surface portion of the gate metal layer.
- the sidewall spacer covers the second upper surface portion of the gate metal layer and sidewall surfaces of each of the gate metal layer and the gate insulating layer.
- FIG. 1 is a schematic cross-sectional view of a conventional semiconductor device structure during a typical MEOL process flow
- FIGS. 2-5 are schematic cross-sectional views of some illustrative embodiments of the present disclosure.
- FIGS. 6-10 are schematic cross-sectional views depicting various exemplary aspects of further illustrative embodiments disclosed herein;
- FIG. 11 is a schematic cross-sectional view of an illustrative semiconductor device structure according to some exemplary embodiments of the present disclosure.
- FIGS. 12-13 are schematic cross-sectional views showing further aspects of additional illustrative embodiments disclosed herein.
- MOS transistors can be designed with millions of transistors. Many ICs are designed using metal oxide semiconductor (MOS) transistors, also known as field effect transistors (FETs) or MOSFETs.
- MOS transistor properly refers to a device having a metal gate electrode and an oxide gate insulator, that term will be used throughout to refer to any semiconductor device that includes a conductive gate electrode (whether metal or other conductive material) that is positioned over a gate insulator (whether oxide or other insulator) which, in turn, is positioned over a semiconductor substrate.
- MOS transistors may be fabricated as P-channel MOS transistors or PMOS transistors and as N-channel transistors or NMOS transistors, and both may be fabricated with or without mobility enhancing stressor features or strain-inducing features.
- stress and strain may be described with regard to a tensile modulus.
- a circuit designer may mix and match device types, using PMOS and NMOS transistors, stressed and unstressed, to take advantage of the best characteristics of each device type as they best suit the circuit being designed.
- a contacted poly pitch is defined for a technology node and, thus, does not represent a variable parameter
- a trade-off between a length of a gate electrode and a critical dimension (CD) of a source/drain contact as both of the gate electrode width and the contact CD need to be as big as possible.
- the length of a gate electrode is considered to extend along a direction parallel to a direction extending in between the source and drain and, in particular, along a direction which is substantially parallel to a direction along which a channel between the source and drain is provided.
- the present disclosure relates in some aspects to a concept that allows increasing the contact CD and, in particular, the space for a contact to land between two neighboring gates.
- the present disclosure proposes to reduce a length dimension of a gate electrode material disposed over a gate insulating layer while maintaining a respective dimension of the gate insulating layer.
- the present disclosure provides trimming a silicon part of a gate structure such that a top portion of a gate silicon layer is trimmed.
- the space for contacts to land between two adjacent gate electrode structures may be increased.
- semiconductor device structures and methods for forming a semiconductor device in accordance with various exemplary embodiments of the present disclosure will be illustrated.
- the described process steps, procedures and materials are to be considered only as exemplary embodiments designed to illustrate to one of ordinary skill in the art methods for practicing the invention.
- Illustrated portions of semi-conductor devices and semiconductor device structures may include only a single MOS structure, although those skilled in the art will recognize that actual implementations of integrated circuits may include a large number of such structures.
- steps in the manufacture of semiconductor devices and semiconductor device structures are well known and so, in the interest of brevity, many conventional steps will only be mentioned briefly herein, or will be omitted entirely without providing the well-known process details.
- FIG. 2 illustrates a semiconductor device structure 200 during a process for fabricating a semiconductor device.
- the semiconductor device structure 200 comprises a semiconductor substrate 210 and a gate structure 220 formed above a surface of the semiconductor substrate 210 .
- the semiconductor substrate may be silicon, silicon admixed with germanium, or silicon admixed with other elements, as is common in the semiconductor industry, and for convenience will hereinafter be referred to simply as either a semiconductor or silicon substrate.
- the substrate may be a bulk silicon wafer or a silicon-on-insulator (SOI) structure.
- SOI silicon-on-insulator
- the semiconductor substrate 210 is a thin layer of monocrystalline semiconductor material supported by an insulating layer which, in turn, is supported by a supporting substrate.
- the gate structure 220 may comprise a high-k layer 224 , a gate metal layer 225 and a gate electrode layer 226 .
- the high-k layer 224 may, for example, contain HfO 2 , HfSiO 2 , ZrO 2 , or ZrSiO 2 , or a combination of two or more thereof.
- the person skilled in the art appreciates that the high-k layer 224 may represent a layer of material having a dielectric constant greater than 4.
- the gate metal layer 225 may comprise, for example, a metal, such as Ru, a metal alloy, such as TiNi, a metal nitride, such as TaN, TaSiN, TiN, HfN, or a metal oxide, such as RuO 2 , or any combination thereof.
- the gate electrode layer 226 may be a silicon-containing layer, for example comprising amorphous silicon, polysilicon or silicon/germanium, or any combination thereof.
- a dielectric layer may be alternatively provided, and that layer 226 may comprise a metal material.
- an additional liner may be disposed under the gate electrode layer 226 embedded in or formed above the surface of the semiconductor substrate 210 , the additional liner layer comprising a strain-inducing material for improving the mobility of charge carriers in a channel region of the semiconductor substrate 210 under the gate structure 220 .
- a trimming process 230 may be applied to the gate structure 220 as shown in FIG. 2 .
- the trimming process 230 may be performed as an additional process directly after patterning the gate structure 220 , as illustrated in FIG. 2 .
- the trimming process 230 may be performed after patterning the gate electrode layer 226 and before patterning the gate insulating layer 224 .
- the trimming process 230 may comprise an isotropic silicon etch process with high selectivity of silicon to at least one of the high-k and the metal gate material.
- the trimming process 230 may be alternatively such that, in case of a polysilicon gate electrode layer 226 , a SiO 2 reaction layer may be formed on a timescale that is practical for manufacturing semiconductor devices, the time scale depending on the plasma processing conditions and the substrate temperature, for example.
- a reactant gas containing excited oxygen species may be used to react with polysilicon material to form an SiO 2 reaction layer.
- the excited oxygen species may be produced using an O 2 plasma source.
- the O 2 plasma source may be a remote plasma source if the source needs to be removed from the substrate in the processing system.
- an oxygen-containing gas such as O 2 or H 2 O may be used to thermally oxidize the polysilicon material to form an SiO 2 reaction layer.
- a wet oxidation process may be used instead.
- the substrate may be immersed in warm H 2 O or in an acidic solution.
- a SiN layer may be deposited on the surface of the semiconductor substrate 210 .
- the SiO 2 reaction layer may be removed or stripped from the unreacted gate electrode layer 226 .
- an etch gas may be applied which is selected from, for example, aqueous HF vapor or NH 3 , followed by a heat treatment to evaporate the trimmed product.
- the illustrative trimming processes may be based on many aspects, such as ion gas species, etch biases, etch chamber and its control by voltages, over/underetches and wet etches. Furthermore, the person skilled in the art will take such various aspects into consideration when performing the illustrative embodiments disclosed herein.
- FIG. 3 shows a semiconductor device structure 300 having a trimmed gate structure 320 disposed on a surface of a semiconductor substrate 310 .
- the semiconductor device structure 300 may be, for example, obtained after having performed the trimming process 230 to the semiconductor device structure 200 as described with regard to the exemplary embodiment illustrated in FIG. 2 .
- the trimmed gate structure 320 comprises a gate insulating layer 324 and a gate metal layer 325 disposed on the gate insulating layer 324 . Over the gate insulating layer 324 and the gate metal layer 325 , a gate electrode layer 326 is formed.
- the gate electrode layer 326 of the trimmed gate structure 320 overlies the gate metal layer 325 such that exposed surfaces 332 and 334 of the gate metal layer 325 are not covered by the gate electrode layer 326 .
- the exposed surfaces 332 and 334 define protruding portions of the gate metal layer 325 and the gate insulating layer 324 projecting away from the trimmed gate structure 320 by a distance denoted with reference numeral 350 .
- FIG. 4 shows a semiconductor device structure 400 and a semiconductor substrate 410 according to an illustrative embodiment of the present disclosure.
- the semiconductor device structure 400 comprises a gate structure 420 adjacent to which sidewall spacers 462 and 464 are formed.
- the gate structure 420 comprises a gate insulating layer 424 , a gate metal layer 425 disposed on the gate insulating layer 424 , and a trimmed gate electrode layer 426 .
- FIG. 4 explicitly illustrates an exemplary embodiment having two sidewall spacers 462 and 464 formed adjacent to the trimmed gate structure 420 at each side of the gate structure 420 , only one sidewall spacer or, alternatively, more than two sidewall spacers may be provided.
- the illustrative embodiment as depicted in FIG. 4 shows a liner spacer 462 being formed adjacent to the gate electrode layer 426 and the layer stack of the gate insulating layer 424 and the gate metal layer 425 so as to cover surfaces 434 and 432 of the gate metal layer 425 that are not covered by a gate electrode material layer 426 which is disposed on the gate metal layer 425 .
- the liner spacer 462 may substantially assume a deformed “W” shape.
- a thickness of spacer 462 may be in a range of about 1-10 nm or in a range of about 2-5 nm.
- the semiconductor device structure 400 may be obtained subsequent to forming a trimmed gate structure, such as the trimmed gate structure 320 of FIG. 3 , and forming one or more sidewall spacers adjacent to the trimmed gate structure.
- forming one or more sidewall spacers may comprise a process for forming one or more spacers by, for example, depositing spacer-forming material to form one or more layers of spacer-forming material with a thickness substantially corresponding to the distance 350 in FIG. 3 . Therefore, one or more layers of spacer-forming material may be formed to replace material of the gate electrode layer which was removed when performing the trimming process as illustrated with regard to FIGS. 2 and 3 .
- a thickness of a deposited layer of spacer-forming material may be greater than the distance 350 as illustrated in FIG. 3 .
- FIG. 5 shows schematically a sectional view of a semiconductor device structure 500 and a semiconductor substrate 510 .
- a gate structure 520 is formed on a surface of the semiconductor substrate 510 , the gate structure 520 comprising a gate insulating layer 524 , a gate metal layer 525 and a trimmed gate electrode layer 526 .
- a gate silicide region 566 is formed in an upper portion of the trimmed gate electrode layer 526 .
- the trimmed gate electrode layer 526 is trimmed relative to the gate metal layer 525 and the gate insulating layer 524 such that surfaces 532 and 534 of the gate metal layer 525 are not covered by the trimmed gate electrode layer 526 .
- the surfaces 532 and 534 of the gate metal layer 525 define protruding portions of the gate insulating layer 524 and the gate metal layer 525 projecting away from the trimmed gate electrode layer 526 .
- Spacers 562 and 564 are formed overlying the exposed surfaces 532 and 534 of the gate metal layer 525 .
- the person skilled in the art will appreciate that one or more spacers may be formed adjacent to the gate electrode layer 526 and the gate metal layer 525 and the gate insulating layer 524 so as to cover sidewalls of the trimmed gate electrode layer 526 , the gate metal layer 525 and the gate insulating layer 524 .
- only one spacer may be formed adjacent to the gate electrode layer 526 , the spacer having a thickness such that the protruding region of the gate metal layer 525 and the gate insulating layer 524 is encapsulated by the spacer.
- the thickness of the spacer 562 may be less than a distance measuring a length of either one of the surfaces 532 and 534 along a direction projecting away from the trimmed gate electrode layer 526 .
- a thickness of the spacer 562 may be bigger than the length of the surfaces 532 and 534 along a direction projecting away from the trimmed gate electrode layer 526 .
- the person skilled in the art will appreciate that the surfaces 532 and 534 may be covered by at least one spacer.
- the semiconductor device structure 500 as depicted in FIG. 5 further comprises deep source and drain regions 572 and source/drain extension regions 574 . Furthermore, silicide regions 582 are formed in alignment with the spacer 564 in the source/drain represented by reference numerals 572 and 574 in FIG. 5 .
- the semiconductor device structure 500 as depicted in FIG. 5 may be obtained subsequently to forming the semiconductor device structure 400 as shown in FIG. 4 by performing source/drain extension implant processes, source and drain implantation processes and forming silicide regions 582 in source/drain 572 , 574 adjacent to the gate structure 520 .
- the person skilled in the art will appreciate that the silicide regions 582 may be provided in alignment with the gate structure 520 and the sidewall spacers 562 and 564 so as to not depend on the trimmed gate electrode layer 526 .
- the sidewall spacers may be removed earlier in the process flow and replaced by another sidewall spacer structure such that sidewall spacers 462 and 464 as depicted in FIG. 4 may actually represent a dummy spacer structure which is to be removed during an intermediate processing taking place in the process flow in between the phases illustrated with regard to FIGS. 4 and 5 .
- FIG. 6 shows a semiconductor device structure 600 according to embodiments illustrating alternative process flows.
- the semiconductor device structure 600 is formed in a semiconductor substrate 610 such that a gate structure 620 is disposed on a surface of the semiconductor substrate 610 .
- the gate structure comprises a gate insulating layer 624 , a gate metal layer 625 and a gate electrode layer 626 .
- Sidewall spacers 642 are formed adjacent to the gate structure 620 .
- the sidewall spacers 642 may be comprised of one or more sidewall spacer layers as described earlier with regard to other illustrative embodiments.
- the semiconductor device structure 600 may be formed subsequently to providing the semiconductor device structure 200 as illustrated in FIG. 2 .
- a process for forming the sidewall spacers 642 may be performed before performing the trimming process.
- FIG. 7 shows a semiconductor device structure 700 and a semiconductor substrate 710 according to an illustrative embodiment.
- the semiconductor device structure 700 comprises a gate structure 720 disposed on a surface of the semiconductor substrate 710 .
- the semiconductor device structure 700 further comprises source and drain extension regions 774 formed within the semiconductor substrate 710 in alignment with the gate structure 720 and/or the spacer structure 742 .
- halo regions may be formed within the semiconductor substrate 710 .
- the semiconductor device structure 700 may be obtained by performing an implantation process after providing the semiconductor device structure 600 as shown in FIG. 6 .
- an implantation process (not illustrated) at least one of a source/drain extension region implantation process and a halo region implantation process may be performed.
- the person skilled in the art will appreciate that at least one or more sidewall spacers may act as an implantation mask for aligning the source and drain extension regions 774 and/or halo regions (not illustrated) with regard to the gate structure 720 .
- implantation processes may be performed after having removed the sidewall spacer structure of the semiconductor device structure 600 as shown in FIG. 6 .
- FIG. 8 depicts a semiconductor device structure 800 and a semiconductor substrate 810 according to an illustrative embodiment of the present disclosure.
- the semiconductor device structure 800 comprises a gate structure 820 and source and drain extension regions 874 in alignment with the gate structure 820 , wherein the gate structure 820 is formed on a surface of a semiconductor substrate 810 .
- the source and drain extension regions 874 are formed adjacent to the gate structure 820 at each side of the gate structure 820 within the semiconductor substrate 810 . Additionally or alternatively, halo regions (not illustrated) may be further provided in the semiconductor substrate 810 .
- the gate structure 820 comprises a gate insulating layer 824 , a gate metal layer 825 and a gate electrode layer 826 .
- the semiconductor device structure 800 as depicted in FIG. 8 may be obtained by performing an etch process to the semiconductor device structure 700 as depicted in FIG. 7 for removing the sidewall spacers 742 of FIG. 7 .
- sidewall spacer structure 742 as depicted in FIG. 7 may represent a dummy spacer structure.
- FIG. 9 shows a semiconductor device structure 900 having a gate structure 920 disposed on a surface of a semiconductor substrate 910 .
- the gate structure 920 comprises a gate insulating layer 924 and a gate metal layer 925 disposed on the gate insulating layer 924 .
- a trimmed gate electrode layer 926 is formed over the gate insulating layer 924 and the gate metal layer 925 .
- the gate structure 920 may be formed in correspondence with illustrative embodiments as described with regard to gate structure 220 as shown in FIG. 2 .
- the trimmed gate electrode layer 926 of the trimmed gate structure 920 overlies the gate metal layer 925 such that exposed surfaces 932 and 934 of the gate metal layer 925 are not covered by the gate electrode layer 926 .
- the person skilled in the art will appreciate that the exposed surfaces 932 and 934 define protruding portions of the gate metal layer 925 and the gate insulating layer 924 projecting away from the trimmed gate electrode layer 926 by a distance represented by reference numeral 950 in FIG. 9 .
- Source and drain extension regions 974 are formed in the semiconductor substrate 910 in alignment with the gate metal layer 925 and the gate insulating layer 924 .
- the gate structure 920 of the semiconductor device structure 900 as depicted in FIG. 9 has a length dimension which is basically decoupled from the position of the source and drain extension regions 974 defining a channel length of a channel region extending under the gate structure 920 in the semiconductor substrate 910 .
- FIG. 10 shows a semiconductor device structure 1000 and a semiconductor substrate 1010 according to an illustrative embodiment of the present disclosure.
- the semiconductor device structure 1000 comprises a gate structure 1020 disposed on a surface of the semiconductor substrate 1010 .
- the gate structure 1020 has a gate insulating layer 1024 , a gate metal layer 1025 and a trimmed gate electrode layer 1026 . Adjacent to the gate structure 1020 , one or more sidewall spacers 1062 and 1064 are formed.
- FIG. 10 explicitly illustrates an exemplary embodiment having two sidewall spacers 1062 and 1064 formed adjacent to the gate structure 1020 at each side of the gate structure 1020 , only one sidewall spacer or alternatively more than two sidewall spacers may be provided.
- FIG. 10 shows a liner spacer 1062 being formed adjacent to the trimmed gate electrode layer 1026 and the layer stack of the gate insulating layer 1024 and the gate metal layer 1025 so as to cover the surfaces 1034 and 1032 of the gate metal layer 1025 that are not covered by the trimmed gate electrode layer 1026 .
- Source and drain extension regions 1074 are formed in the semiconductor substrate 1010 in alignment with the gate insulating layer 1024 and the gate metal layer 1025 .
- the sidewall spacers 1062 and 1064 are formed over the source and drain extension regions 1074 such that portions of the sidewall spacers 1062 and 1064 are disposed on the source and drain extension regions 1074 so as to partially cover the source and drain extension regions 1074 .
- the liner spacer 1062 may have a substantially deformed “W” shape as depicted in FIG. 10 .
- a thickness of the liner spacer 1062 may be in a range of about 1-10 nm or in a range of about 2-5 nm.
- the semiconductor device structure 1000 may be obtained subsequent to forming the gate structure 920 of FIG. 9 by forming one or more sidewall spacers adjacent to the gate structure 920 of FIG. 9 .
- forming one or more sidewall spacers may comprise forming a spacer by depositing a spacer-forming material having a thickness corresponding to the distance 950 in FIG. 9 depicting gate electrode material of the gate electrode layer which was removed when performing the trimming process for forming the trimmed gate electrode layer 926 which is depicted in FIG. 9 .
- a thickness of a deposited spacer-forming material may be greater than the distance 950 of FIG. 9 .
- FIG. 11 shows a semiconductor device structure during middle-end-of-line (MEOL) fabrication process flow according to some illustrative embodiments of the present disclosure.
- FIG. 11 shows a semiconductor substrate 1100 and two gate structures 1120 and 1140 disposed on a surface of the semiconductor substrate 1100 .
- Source/drain regions 1112 , 1114 and 1116 are formed within the semiconductor substrate 1100 adjacent to each of the gate structures 1120 , 1140 without explicitly depicting source and drain extension regions and optional halo regions.
- the gate structure 1120 has a gate insulating layer 1124 , a trimmed gate electrode layer 1126 and a gate silicide 1164 formed on the trimmed gate electrode layer 1126 . Although for ease of illustration only the gate insulating layer 1124 is explicitly depicted, no limitation of the present disclosure is intended.
- the depicted layer 1124 may be comprised of a gate insulating layer and a gate metal layer formed on the gate insulating layer in accordance with the preceding description.
- Sidewall spacers 1128 are formed at each side of the gate structure 1120 such that surfaces 1134 of the layer 1124 are covered by the sidewall spacers 1128 which surfaces 1134 are not covered by the trimmed gate electrode layer 1126 .
- the gate structure 1140 has a gate insulating layer 1144 , a trimmed gate electrode layer 1146 and a gate silicide 1168 formed on the trimmed gate electrode layer 1146 .
- the gate insulating layer 1144 is explicitly depicted, no limitation of the present disclosure is intended. It is noted that the depicted layer 1144 may be comprised of a gate insulating layer and a gate metal layer formed on the gate insulating layer in accordance with the preceding description.
- Sidewall spacers 1148 are formed at each side of the trimmed gate structure 1140 such that surfaces 1134 of the layer 1144 are covered by the sidewall spacers 1148 which surfaces 1134 are not covered by the trimmed gate electrode layer 1146 .
- a length of the gate insulating layer 1124 is represented by an arrow 1122
- a length of the gate insulating layer 1144 is represented by an arrow 1142
- arrows 1124 and 1142 respectively, represent length dimensions of channels extending under the respective gate structures 1120 and 1140 .
- semiconductor devices may be provided having gate electrode layers 1126 , 1146 with length dimensions that are decoupled from the respective channel lengths 1122 , 1142 .
- a contact 1160 schematically represents a contact for contacting the source and drain of a transistor structure comprising one of the gate electrode structures 1120 , 1140 .
- the contact 1160 is disposed on the source or drain region 1114 .
- a CPP is schematically depicted as a pitch between the source and drain regions 1114 and 1116 .
- the contact geometry in accordance with the illustrative embodiment as depicted in FIG. 11 is further parameterized by two parameters, “a” and “b”, wherein the parameter “b” characterizes a distance between the contact 1160 and the gate insulating layer 1124 of the trimmed gate structure 1120 , and the parameter “a” characterizes a distance between the contact 1160 and the gate silicide 1164 of the gate structure 1120 . Due to the trimmed gate electrode layer 1126 of the gate structure 1120 , the parameter “a” is expected to be greater or equal to the parameter “b” for a given CPP. The person skilled in the art will appreciate that the parameter “a” may be increased relative to the prior art parameter “a” in FIG. 1 without affecting the source/drain contact 1160 and, in particular, without affecting the contact resistance of the contact 1160 .
- FIG. 12 shows a semiconductor device structure 1200 and a semiconductor substrate 1210 .
- the semiconductor device structure 1200 has a gate structure 1220 formed on a surface of the semiconductor substrate 1210 .
- the gate structure 1220 comprises a gate insulating layer 1224 , a gate metal layer 1225 and a gate electrode layer 1226 . Adjacent to the gate structure 1220 , a sidewall spacer structure 1248 is formed at each side of the gate structure 1220 .
- the semiconductor device structure 1200 as depicted in FIG. 12 may correspond to a configuration which is explained with regard to FIG. 6 above. It is further noted that the semiconductor device structure 1200 may alternatively correspond to the semiconductor device structure 700 as described with regard to FIG. 7 , although FIG. 12 does not explicitly illustrate source and drain extension regions.
- a trimming process 1230 may be applied to the semiconductor device structure 1200 in order to provide the semiconductor device structure 1300 as depicted in FIG. 13 .
- a trimmed gate structure 1320 is formed. As illustrated in FIG. 13 , the trimmed electrode structure 1320 is disposed on a surface of a semiconductor substrate 1310 .
- the trimmed gate structure 1320 comprises a gate insulating layer 1324 , a gate metal layer 1325 and a trimmed gate electrode layer 1326 . At each side of the trimmed gate structure 1320 , a trimmed sidewall spacer structure 1348 is formed.
- the trimming process ( 1230 in FIG. 12 ) may be configured such that the top part of the trimmed gate electrode layer 1326 assumes a shape of a rounded tip.
- the person skilled in the art will appreciate that, due to the trimming process ( 1230 in FIG. 12 ), a space for contacts to land during subsequent processing between two adjacent gate structures may be increased.
- the etch process may comprise shaping the top part of polysilicon, wherein the gate insulating layer 1324 and the gate metal layer 1325 are protected by spacer material.
- the etch process may comprise shaping the top part of polysilicon, wherein the gate insulating layer 1324 and the gate metal layer 1325 are protected by spacer material.
- anisotropic physical etch components like Ar-ions which are accelerated to the wafer surface and then physically removing polysilicon at its top portion by momentum transfer from Ar-ions to polysilicon atoms.
- the trimming process may not only affect the trimmed gate electrode layer 1326 , but may also affect the trimmed sidewall spacer structure 1348 such that at least one sidewall spacer may be etched back.
- a top portion of the gate electrode layer 1326 may be exposed such that the top portion of the gate electrode layer 1326 may be as well trimmed back with further trimming.
- a gate electrode layer with a rounded tip portion may be obtained instead of a more or less flattened top portion as in the prior art.
- FIGS. 12 and 13 may result in an increased distance between an upper portion of a gate structure (for example an upper portion of the gate structure 1320 in FIG. 13 ) and a source/drain contact (corresponding to 1160 in FIG. 11 ) such that a respective parameter “a” may be increased while substantially maintaining a parameter “b” such that a relation such as “a” greater than or equal to “b” may be obtained in a contact geometry according to these alternative embodiments.
- a gate structure is formed, the gate structure comprising a gate insulating layer and a gate electrode structure formed on the gate insulating layer.
- the methods provide reducing a dimension of the gate electrode structure relative to the gate insulating layer along a direction extending in parallel to a direction connecting source and drain.
- the present disclosure further provides a semiconductor device structure with a gate structure.
- the gate structure comprises a gate insulating layer and a gate electrode structure formed above the gate insulating layer, wherein a dimension of the gate electrode structure extending along a direction which is substantially parallel to a direction being oriented from source to drain is reduced relative to a dimension of the gate insulating layer along the direction.
- gate structures are provided having a gate silicon length which is decoupled from the channel width induced by the gate structure.
- a spacer structure may be disposed on an upper surface portion of the gate insulating layer, the upper surface portion being substantially parallel to a surface of the semiconductor substrate which is covered by the gate structure.
- the gate electrode structure may have a rounded tip portion.
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Abstract
Description
- 1. Field of the Disclosure
- Generally, the present disclosure relates to sophisticated semiconductor devices and the manufacturing of such devices, and in particular to device structures with a gate silicon length that is decoupled from the transistor length, and more specifically, while maintaining the transistor length.
- 2. Description of the Related Art
- The majority of present-day integrated circuits (ICs) are implemented by using a plurality of interconnected field effect transistors (FETS), also called metal oxide semiconductor field effect transistors (MOSFETS), or simply MOS transistors. Typically, present-day integrated circuits are implemented by millions of MOS transistors which are formed on a chip having a given surface area.
- In MOS transistors, a current flow through a channel formed between the source and drain of a MOS transistor is controlled via a gate which is typically disposed over the channel region, independent from whether a PMOS transistor or an NMOS transistor is considered. For controlling a MOS transistor, a voltage is applied to the gate of the transistor and current flows through the channel when the applied voltage is greater than a threshold voltage which nontrivially depends on properties of a transistor such as size, material, etc.
- In efforts to build integrated circuits with a greater number of transistors and faster semiconductor devices, the trend towards ultra large scale integration (VLSI) in semiconductor technology has resulted in ICs which are ever-decreasing in size and, therefore, reducing the size of MOS transistors. In present-day semiconductor technology, the minimum feature sizes of microelectronic devices have been approaching the deep sub-micron regime so as to meet the demand for faster and lower power microprocessors and digital circuits and, in general, semiconductor device structures which have a higher energy efficiency. A critical dimension (CD) is generally represented by a width or length dimension of a line or space that has been identified as critical to the device under fabrication to operate properly and, furthermore, determines the device performance.
- As a result, the continued increase in performance of ICs has led IC designers to push CDs to smaller scales which allow increasing the integration density of IC structures. It is easy to see that the integration density depends on the dimensions of the MOS transistors representing the core building elements of ICs. An important parameter to characterize the transistor size is represented by the contacted poly pitch (CPP), which represents a measure for a distance between a source contact and a drain contact or measures a pitch between the source and drain of a transistor. In current semiconductor technologies, the CPP has been reduced down to about 80 nm. Downscaling of the CPP was accompanied by a scaling of the CDs of gate electrodes and, in particular, of length dimensions of gate electrodes. The gate length at a technology node may be roughly estimated to be on the order of a quarter of the CPP. For instance, a CPP of 192 nm has a gate CD of roughly 49 nm, a CPP of 130 nm has a gate CD of roughly 32 nm, and a CPP of 113 nm has a gate CD of roughly 28 nm.
-
FIG. 1 shows a conventional semiconductor device structure during a middle-end-of-line (MEOL) fabrication process flow in which source contact structures, drain contact structures and gate electrode contact structures are formed. -
FIG. 1 shows asemiconductor substrate 100 and twogate electrode structures semiconductor substrate 100. As schematically depicted inFIG. 1 , source anddrain regions semiconductor substrate 100 adjacent to the respectivegate electrode structure gate electrode structure 120 comprises agate insulating layer 124, agate electrode layer 126 and agate silicide 164 formed above thegate electrode layer 126. Aspacer structure 128 is formed at each side of thegate electrode structure 120. Accordingly, thegate electrode structure 140 comprises agate insulating layer 144, agate electrode layer 146 and agate silicide 168 formed on thegate electrode layer 146.Sidewall spacers 148 are formed at each side of thegate electrode structure 140. - A length dimension of the
gate electrode structure 120 is schematically represented by anarrow 122 and substantially defines the length of a channel region extending between the source anddrain regions gate electrode structure 140 has a length dimension which is schematically represented by anarrow 142 and substantially defines the length of a channel region extending between the source anddrain regions contact 160 schematically represents a contact for contacting the source and drain of a transistor structure comprising one of thegate electrode structures drain region 114. According to the illustration inFIG. 1 , a CPP is schematically depicted as a pitch between the source anddrain regions - At a technology node, the CPP rather represents a given quantity than a variable and, therefore, the CPP together with the
channel length 122 defines the space for thecontact 160 to land between two neighboringgate electrode structures FIG. 1 . A contact geometry, such as represented inFIG. 1 , may be further parameterized by two parameters, “a” and “b” as schematically depicted inFIG. 1 . Herein, the parameter “b” characterizes the distance between thecontact 160 and thegate electrode stack gate electrode structure 120, and the parameter “a” characterizes the distance between thecontact 160 and thegate silicide 164. - With
FIG. 1 at hand, the person skilled in the art will understand that a scaling of the CPP down to smaller dimensions will, first of all, result in contact geometries having smaller parameters “a” and “b”. When aiming at smaller technology nodes, several issues arise with regard to the contact geometry and which become more and more important at smaller scales. - When decreasing the channel length of a transistor, a coupling between source/drain and the channel becomes stronger, such that the threshold voltage is effectively lower for transistors with shorter gate lengths, generally being referred to as Vth roll-off. For a given CPP, the gate width (e.g.,
reference numeral 122 inFIG. 1 ) is, therefore, required to be as big as possible, leading to the requirement of the parameter “a” to become smaller. In turn, the critical dimension CD of a contact (e.g.,reference numeral 160 inFIG. 1 ) is required to be as big as possible in order to define sufficient space for the contact (e.g.,reference numeral 160 inFIG. 1 ) to land between two neighboring gate electrode structures (e.g.,reference numerals FIG. 1 ). However, in any case, the parameter “a” is expected to be smaller than the parameter “b” and, in particular, the parameter “a” is critical with regard to CA-PC leakage which depends on the distance between the gate silicide (e.g.,reference numeral 164 inFIG. 1 ) formed on a gate electrode layer (e.g.,reference numeral 126 inFIG. 1 ) and the contact (e.g.,reference numeral 160 inFIG. 1 ) and the contact taper angle of the contact (e.g.,reference numeral 160 inFIG. 1 ). When increasing the parameter “a” by decreasing the CD of a contact (e.g.,reference numeral 160 inFIG. 1 ) for a fixed gate length, the contact resistance of the contact (e.g.,reference numeral 160 inFIG. 1 ) is increased and, therefore, transistor structures having a high contact resistance are obtained. In consequence, present-day semiconductor devices at small technology nodes increasingly suffer from increased yield loss and low device performance with a high device variability and fluctuations in device characteristics. - It is, therefore, desirable to provide contact geometries with smaller CPP and smaller parameter “a” without detrimentally affecting the performance of scaled transistors. It is further desirable to provide contact geometries which maintain a sufficiently big parameter “a” at a given technology node.
- In view of the above discussion, there exists a need for methods for forming a semiconductor device and for a semiconductor device structure providing a low yield loss and a lower contact resistance, while maintaining a high device performance or even increasing the device performance with smaller device variability and fluctuations in the device characteristics.
- The following presents a simplified summary of the disclosure in order to provide a basic understanding of some aspects of the subject matter that is described in further detail below. This summary is not an exhaustive overview of the disclosure, nor is it intended to identify key or critical elements of the subject matter disclosed here. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later.
- Generally, the subject matter disclosed herein is directed to various new and unique configurations of gate electrode structures of transistor devices wherein the gate silicon length is decoupled from the gate transistor length. In one exemplary embodiment of the present disclosure, a semiconductor device structure includes an active region positioned in a semiconductor substrate and a gate structure of a transistor positioned above the active region. The gate structure includes, among other things, a gate insulating layer, a gate metal layer positioned above the gate insulating layer and a trimmed gate electrode material layer positioned above the gate metal layer, wherein a length of at least a portion of the trimmed gate electrode material layer in a gate length direction of the transistor is less than a length of at least the gate metal layer in the gate length direction.
- In yet another illustrative embodiment disclosed herein, a semiconductor device structure includes, among other things, an active region positioned in a semiconductor substrate and a gate structure of a transistor positioned above the active region. The gate structure includes a gate insulating layer, a gate metal layer positioned above the gate insulating layer and a gate electrode material layer positioned above the gate metal layer. Furthermore, the sidewall surfaces of the gate electrode material layer are laterally offset from respective sidewall surfaces of at least one of the gate metal layer and the gate insulating layer such that the gate electrode material layer covers a first upper surface portion of at least one of the gate metal layer and the gate insulating layer but does not cover a second upper surface portion of at least one of the gate metal layer and the gate insulating layer. Additionally, the disclosed semiconductor device structure further includes a sidewall spacer positioned adjacent to sidewalls of the gate structure, the sidewall spacer covering at least the second upper surface portion and the respective sidewall surfaces of the at least one of the gate metal layer and the gate insulating layer.
- In a further exemplary embodiment of the present disclosure, a semiconductor device structure includes, among other things, an active region positioned in a semiconductor substrate, a gate structure of a transistor positioned above the active region and a sidewall spacer positioned adjacent to sidewalls of the gate structure. The gate structure includes a gate insulating layer, a gate metal layer positioned above the gate insulating layer and a gate electrode material layer positioned above the gate metal layer. The gate insulating layer includes a high-k dielectric material and the gate electrode material layer includes one of amorphous silicon, polysilicon and silicon/germanium. A length of at least a portion of the gate electrode material layer in a gate length direction of the transistor is less than a length of each of the gate metal layer and the gate insulating layer in the gate length direction. Additionally, the gate electrode material layer covers a first upper surface portion of the gate metal layer but does not cover a second upper surface portion of the gate metal layer. Furthermore, the sidewall spacer covers the second upper surface portion of the gate metal layer and sidewall surfaces of each of the gate metal layer and the gate insulating layer.
- The disclosure may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:
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FIG. 1 is a schematic cross-sectional view of a conventional semiconductor device structure during a typical MEOL process flow; -
FIGS. 2-5 are schematic cross-sectional views of some illustrative embodiments of the present disclosure; -
FIGS. 6-10 are schematic cross-sectional views depicting various exemplary aspects of further illustrative embodiments disclosed herein; -
FIG. 11 is a schematic cross-sectional view of an illustrative semiconductor device structure according to some exemplary embodiments of the present disclosure; and -
FIGS. 12-13 are schematic cross-sectional views showing further aspects of additional illustrative embodiments disclosed herein. - While the subject matter disclosed herein is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
- Various illustrative embodiments of the present subject matter are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.
- The following illustrative embodiments are described in sufficient detail to enable those skilled in the art to make and use the invention. It is to be understood that other embodiments would be evident based on the present disclosure and that system, structure, process or mechanical changes may be made without departing from the scope of the present disclosure. In the following description, numerous specific details are given to provide a thorough understanding of the disclosure. However, it will be apparent that the various illustrated aspects and embodiments of the disclosure may be practiced without these specific details. In order to avoid obscuring the present disclosure, some well-known circuits, system configurations, structure configurations and process steps are not disclosed in full detail.
- The drawings showing various exemplary embodiments of the present disclosure are semi-diagrammatic and are not to scale and, particularly, some of the dimensions are for clarity of presentation only and, therefore, are exaggeratedly shown in the drawings. Similarly, although the views in the drawings generally show similar orientations for ease of description, this depiction in the drawings is arbitrary for the most part. Generally, the embodiments of the disclosure can be operated in any orientation.
- The various embodiments are disclosed and described having some features in common, for clarity and ease of illustration, description and comprehension thereof, similar and like features are ordinarily described with similar reference numerals as a matter of descriptive convenience. Various different embodiments are described with regard to one or more common figures as a matter of descriptive convenience. It is to be understood that this is not intended to have any other significance or provides any limitation for the present disclosure. Any express or implied numeration of the various disclosed embodiments, such as a first embodiment, a second embodiment, etc., is a matter of descriptive convenience only and is not intended to provide any significance to, or limitation on, the present disclosure.
- The present subject matter will now be described with reference to the attached figures. Various systems, structures and devices are schematically depicted in the drawings for purposes of explanation only and so as to not obscure the present disclosure with details that are well known to those skilled in the art. Nevertheless, the attached drawings are included to describe and explain illustrative examples of the present disclosure. The words and phrases used herein should be understood and interpreted to have a meaning consistent with the understanding of those words and phrases by those skilled in the relevant art. No special definition of a term or phrase, i.e., a definition that is different from the ordinary and customary meaning as understood by those skilled in the art, is intended to be implied by consistent usage of the term or phrase herein. To the extent that a term or phrase is intended to have a special meaning, i.e., a meaning other than that understood by skilled artisans, such a special definition will be expressly set forth in the specification in a definitional manner that directly and unequivocally provides the special definition for the term or phrase.
- Integrated circuits (ICs) can be designed with millions of transistors. Many ICs are designed using metal oxide semiconductor (MOS) transistors, also known as field effect transistors (FETs) or MOSFETs. Although the term “MOS transistor” properly refers to a device having a metal gate electrode and an oxide gate insulator, that term will be used throughout to refer to any semiconductor device that includes a conductive gate electrode (whether metal or other conductive material) that is positioned over a gate insulator (whether oxide or other insulator) which, in turn, is positioned over a semiconductor substrate. The person skilled in the art understands that MOS transistors may be fabricated as P-channel MOS transistors or PMOS transistors and as N-channel transistors or NMOS transistors, and both may be fabricated with or without mobility enhancing stressor features or strain-inducing features. The person skilled in the art understands that stress and strain may be described with regard to a tensile modulus. A circuit designer may mix and match device types, using PMOS and NMOS transistors, stressed and unstressed, to take advantage of the best characteristics of each device type as they best suit the circuit being designed.
- Since a contacted poly pitch (CPP) is defined for a technology node and, thus, does not represent a variable parameter, there exists a trade-off between a length of a gate electrode and a critical dimension (CD) of a source/drain contact, as both of the gate electrode width and the contact CD need to be as big as possible. Herein, the length of a gate electrode is considered to extend along a direction parallel to a direction extending in between the source and drain and, in particular, along a direction which is substantially parallel to a direction along which a channel between the source and drain is provided. The present disclosure relates in some aspects to a concept that allows increasing the contact CD and, in particular, the space for a contact to land between two neighboring gates.
- According to some illustrative embodiments, the present disclosure proposes to reduce a length dimension of a gate electrode material disposed over a gate insulating layer while maintaining a respective dimension of the gate insulating layer. According to other illustrative embodiments, the present disclosure provides trimming a silicon part of a gate structure such that a top portion of a gate silicon layer is trimmed. Herein, the space for contacts to land between two adjacent gate electrode structures may be increased.
- In describing the following figures, semiconductor device structures and methods for forming a semiconductor device in accordance with various exemplary embodiments of the present disclosure will be illustrated. The described process steps, procedures and materials are to be considered only as exemplary embodiments designed to illustrate to one of ordinary skill in the art methods for practicing the invention. However, it is to be understood that the invention is not to be limited to these exemplary embodiments. Illustrated portions of semi-conductor devices and semiconductor device structures may include only a single MOS structure, although those skilled in the art will recognize that actual implementations of integrated circuits may include a large number of such structures. Various steps in the manufacture of semiconductor devices and semiconductor device structures are well known and so, in the interest of brevity, many conventional steps will only be mentioned briefly herein, or will be omitted entirely without providing the well-known process details.
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FIG. 2 illustrates asemiconductor device structure 200 during a process for fabricating a semiconductor device. Thesemiconductor device structure 200 comprises asemiconductor substrate 210 and agate structure 220 formed above a surface of thesemiconductor substrate 210. The semiconductor substrate may be silicon, silicon admixed with germanium, or silicon admixed with other elements, as is common in the semiconductor industry, and for convenience will hereinafter be referred to simply as either a semiconductor or silicon substrate. The substrate may be a bulk silicon wafer or a silicon-on-insulator (SOI) structure. In an SOI structure, thesemiconductor substrate 210 is a thin layer of monocrystalline semiconductor material supported by an insulating layer which, in turn, is supported by a supporting substrate. - The
gate structure 220 may comprise a high-k layer 224, agate metal layer 225 and agate electrode layer 226. The high-k layer 224 may, for example, contain HfO2, HfSiO2, ZrO2, or ZrSiO2, or a combination of two or more thereof. The person skilled in the art appreciates that the high-k layer 224 may represent a layer of material having a dielectric constant greater than 4. Thegate metal layer 225 may comprise, for example, a metal, such as Ru, a metal alloy, such as TiNi, a metal nitride, such as TaN, TaSiN, TiN, HfN, or a metal oxide, such as RuO2, or any combination thereof. Thegate electrode layer 226 may be a silicon-containing layer, for example comprising amorphous silicon, polysilicon or silicon/germanium, or any combination thereof. The person skilled in the art will appreciate that, instead oflayers layer 226 may comprise a metal material. It is also possible that an additional liner may be disposed under thegate electrode layer 226 embedded in or formed above the surface of thesemiconductor substrate 210, the additional liner layer comprising a strain-inducing material for improving the mobility of charge carriers in a channel region of thesemiconductor substrate 210 under thegate structure 220. - A
trimming process 230 may be applied to thegate structure 220 as shown inFIG. 2 . According to some illustrative embodiments, thetrimming process 230 may be performed as an additional process directly after patterning thegate structure 220, as illustrated inFIG. 2 . Alternatively, thetrimming process 230 may be performed after patterning thegate electrode layer 226 and before patterning thegate insulating layer 224. - According to some exemplary embodiments, the
trimming process 230 may comprise an isotropic silicon etch process with high selectivity of silicon to at least one of the high-k and the metal gate material. - According to other embodiments, the
trimming process 230 may be alternatively such that, in case of a polysilicongate electrode layer 226, a SiO2 reaction layer may be formed on a timescale that is practical for manufacturing semiconductor devices, the time scale depending on the plasma processing conditions and the substrate temperature, for example. According to an illustrative example herein, a reactant gas containing excited oxygen species may be used to react with polysilicon material to form an SiO2 reaction layer. The excited oxygen species may be produced using an O2 plasma source. The O2 plasma source may be a remote plasma source if the source needs to be removed from the substrate in the processing system. The person skilled in the art will appreciate that an oxygen-containing gas such as O2 or H2O may be used to thermally oxidize the polysilicon material to form an SiO2 reaction layer. Alternatively, a wet oxidation process may be used instead. Herein, the substrate may be immersed in warm H2O or in an acidic solution. The person skilled in the art will appreciate that optionally, subsequent to forming the SiO2 reaction layer, a SiN layer may be deposited on the surface of thesemiconductor substrate 210. Next, the SiO2 reaction layer may be removed or stripped from the unreactedgate electrode layer 226. According to some illustrative examples herein, an etch gas may be applied which is selected from, for example, aqueous HF vapor or NH3, followed by a heat treatment to evaporate the trimmed product. - The person of ordinary skill having full benefit of the present disclosure will appreciate that, in some exemplary embodiments, the illustrative trimming processes may be based on many aspects, such as ion gas species, etch biases, etch chamber and its control by voltages, over/underetches and wet etches. Furthermore, the person skilled in the art will take such various aspects into consideration when performing the illustrative embodiments disclosed herein.
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FIG. 3 shows asemiconductor device structure 300 having a trimmedgate structure 320 disposed on a surface of asemiconductor substrate 310. Thesemiconductor device structure 300 may be, for example, obtained after having performed thetrimming process 230 to thesemiconductor device structure 200 as described with regard to the exemplary embodiment illustrated inFIG. 2 . The trimmedgate structure 320 comprises agate insulating layer 324 and agate metal layer 325 disposed on thegate insulating layer 324. Over thegate insulating layer 324 and thegate metal layer 325, agate electrode layer 326 is formed. Thegate electrode layer 326 of the trimmedgate structure 320 overlies thegate metal layer 325 such that exposedsurfaces gate metal layer 325 are not covered by thegate electrode layer 326. A person skilled in the art will appreciate that the exposedsurfaces gate metal layer 325 and thegate insulating layer 324 projecting away from the trimmedgate structure 320 by a distance denoted withreference numeral 350. -
FIG. 4 shows asemiconductor device structure 400 and asemiconductor substrate 410 according to an illustrative embodiment of the present disclosure. Thesemiconductor device structure 400 comprises agate structure 420 adjacent to whichsidewall spacers gate structure 420 comprises agate insulating layer 424, agate metal layer 425 disposed on thegate insulating layer 424, and a trimmedgate electrode layer 426. The person skilled in the art will appreciate that althoughFIG. 4 explicitly illustrates an exemplary embodiment having twosidewall spacers gate structure 420 at each side of thegate structure 420, only one sidewall spacer or, alternatively, more than two sidewall spacers may be provided. The illustrative embodiment as depicted inFIG. 4 shows aliner spacer 462 being formed adjacent to thegate electrode layer 426 and the layer stack of thegate insulating layer 424 and thegate metal layer 425 so as to coversurfaces gate metal layer 425 that are not covered by a gateelectrode material layer 426 which is disposed on thegate metal layer 425. According to the illustrative embodiment as depicted inFIG. 4 , theliner spacer 462 may substantially assume a deformed “W” shape. According to some illustrative examples herein, a thickness ofspacer 462 may be in a range of about 1-10 nm or in a range of about 2-5 nm. - According to an illustrative embodiment of an exemplary process flow, the
semiconductor device structure 400 may be obtained subsequent to forming a trimmed gate structure, such as the trimmedgate structure 320 ofFIG. 3 , and forming one or more sidewall spacers adjacent to the trimmed gate structure. The person skilled in the art will appreciate that forming one or more sidewall spacers may comprise a process for forming one or more spacers by, for example, depositing spacer-forming material to form one or more layers of spacer-forming material with a thickness substantially corresponding to thedistance 350 inFIG. 3 . Therefore, one or more layers of spacer-forming material may be formed to replace material of the gate electrode layer which was removed when performing the trimming process as illustrated with regard toFIGS. 2 and 3 . The person skilled in the art will appreciate that, alternatively, a thickness of a deposited layer of spacer-forming material may be greater than thedistance 350 as illustrated inFIG. 3 . -
FIG. 5 shows schematically a sectional view of asemiconductor device structure 500 and asemiconductor substrate 510. Agate structure 520 is formed on a surface of thesemiconductor substrate 510, thegate structure 520 comprising agate insulating layer 524, agate metal layer 525 and a trimmedgate electrode layer 526. Agate silicide region 566 is formed in an upper portion of the trimmedgate electrode layer 526. The trimmedgate electrode layer 526 is trimmed relative to thegate metal layer 525 and thegate insulating layer 524 such that surfaces 532 and 534 of thegate metal layer 525 are not covered by the trimmedgate electrode layer 526. Thesurfaces gate metal layer 525 define protruding portions of thegate insulating layer 524 and thegate metal layer 525 projecting away from the trimmedgate electrode layer 526. -
Spacers surfaces gate metal layer 525. The person skilled in the art will appreciate that one or more spacers may be formed adjacent to thegate electrode layer 526 and thegate metal layer 525 and thegate insulating layer 524 so as to cover sidewalls of the trimmedgate electrode layer 526, thegate metal layer 525 and thegate insulating layer 524. According to an illustrative embodiment, only one spacer (not illustrated) may be formed adjacent to thegate electrode layer 526, the spacer having a thickness such that the protruding region of thegate metal layer 525 and thegate insulating layer 524 is encapsulated by the spacer. According to the illustrative embodiment as depicted inFIG. 5 , twospacers spacers gate structure 520. In an illustrative example herein, the thickness of thespacer 562 may be less than a distance measuring a length of either one of thesurfaces gate electrode layer 526. According to alternative illustrative examples herein, a thickness of thespacer 562 may be bigger than the length of thesurfaces gate electrode layer 526. The person skilled in the art will appreciate that thesurfaces - The
semiconductor device structure 500 as depicted inFIG. 5 further comprises deep source and drainregions 572 and source/drain extension regions 574. Furthermore,silicide regions 582 are formed in alignment with thespacer 564 in the source/drain represented byreference numerals FIG. 5 . - The
semiconductor device structure 500 as depicted inFIG. 5 may be obtained subsequently to forming thesemiconductor device structure 400 as shown inFIG. 4 by performing source/drain extension implant processes, source and drain implantation processes and formingsilicide regions 582 in source/drain gate structure 520. The person skilled in the art will appreciate that thesilicide regions 582 may be provided in alignment with thegate structure 520 and thesidewall spacers gate electrode layer 526. - The person skilled in the art will appreciate that, due to some illustrative embodiments, the sidewall spacers may be removed earlier in the process flow and replaced by another sidewall spacer structure such that
sidewall spacers FIG. 4 may actually represent a dummy spacer structure which is to be removed during an intermediate processing taking place in the process flow in between the phases illustrated with regard toFIGS. 4 and 5 . -
FIG. 6 shows asemiconductor device structure 600 according to embodiments illustrating alternative process flows. Thesemiconductor device structure 600 is formed in asemiconductor substrate 610 such that agate structure 620 is disposed on a surface of thesemiconductor substrate 610. The gate structure comprises agate insulating layer 624, agate metal layer 625 and agate electrode layer 626.Sidewall spacers 642 are formed adjacent to thegate structure 620. The sidewall spacers 642 may be comprised of one or more sidewall spacer layers as described earlier with regard to other illustrative embodiments. - According to an illustrative example, the
semiconductor device structure 600 may be formed subsequently to providing thesemiconductor device structure 200 as illustrated inFIG. 2 . At this phase in the process flow, a process for forming thesidewall spacers 642 may be performed before performing the trimming process. -
FIG. 7 shows asemiconductor device structure 700 and asemiconductor substrate 710 according to an illustrative embodiment. Thesemiconductor device structure 700 comprises agate structure 720 disposed on a surface of thesemiconductor substrate 710. Thesemiconductor device structure 700 further comprises source anddrain extension regions 774 formed within thesemiconductor substrate 710 in alignment with thegate structure 720 and/or thespacer structure 742. Alternatively or additionally, halo regions (not illustrated) may be formed within thesemiconductor substrate 710. - According to an illustrative example, the
semiconductor device structure 700 may be obtained by performing an implantation process after providing thesemiconductor device structure 600 as shown inFIG. 6 . By means of the implantation process (not illustrated), at least one of a source/drain extension region implantation process and a halo region implantation process may be performed. The person skilled in the art will appreciate that at least one or more sidewall spacers may act as an implantation mask for aligning the source anddrain extension regions 774 and/or halo regions (not illustrated) with regard to thegate structure 720. Alternatively, implantation processes may be performed after having removed the sidewall spacer structure of thesemiconductor device structure 600 as shown inFIG. 6 . -
FIG. 8 depicts asemiconductor device structure 800 and asemiconductor substrate 810 according to an illustrative embodiment of the present disclosure. Thesemiconductor device structure 800 comprises agate structure 820 and source anddrain extension regions 874 in alignment with thegate structure 820, wherein thegate structure 820 is formed on a surface of asemiconductor substrate 810. The source anddrain extension regions 874 are formed adjacent to thegate structure 820 at each side of thegate structure 820 within thesemiconductor substrate 810. Additionally or alternatively, halo regions (not illustrated) may be further provided in thesemiconductor substrate 810. According to the illustrative embodiment as depicted inFIG. 8 , thegate structure 820 comprises agate insulating layer 824, agate metal layer 825 and agate electrode layer 826. - According to an illustrative example, the
semiconductor device structure 800 as depicted inFIG. 8 may be obtained by performing an etch process to thesemiconductor device structure 700 as depicted inFIG. 7 for removing thesidewall spacers 742 ofFIG. 7 . - The person skilled in the art will appreciate that the
sidewall spacer structure 742 as depicted inFIG. 7 may represent a dummy spacer structure. -
FIG. 9 shows asemiconductor device structure 900 having agate structure 920 disposed on a surface of asemiconductor substrate 910. Thegate structure 920 comprises agate insulating layer 924 and agate metal layer 925 disposed on thegate insulating layer 924. Over thegate insulating layer 924 and thegate metal layer 925, a trimmedgate electrode layer 926 is formed. Thegate structure 920 may be formed in correspondence with illustrative embodiments as described with regard togate structure 220 as shown inFIG. 2 . - The trimmed
gate electrode layer 926 of the trimmedgate structure 920 overlies thegate metal layer 925 such that exposedsurfaces gate metal layer 925 are not covered by thegate electrode layer 926. The person skilled in the art will appreciate that the exposedsurfaces gate metal layer 925 and thegate insulating layer 924 projecting away from the trimmedgate electrode layer 926 by a distance represented byreference numeral 950 inFIG. 9 . Source anddrain extension regions 974 are formed in thesemiconductor substrate 910 in alignment with thegate metal layer 925 and thegate insulating layer 924. The person skilled in the art will appreciate that thegate structure 920 of thesemiconductor device structure 900 as depicted inFIG. 9 has a length dimension which is basically decoupled from the position of the source anddrain extension regions 974 defining a channel length of a channel region extending under thegate structure 920 in thesemiconductor substrate 910. -
FIG. 10 shows asemiconductor device structure 1000 and asemiconductor substrate 1010 according to an illustrative embodiment of the present disclosure. Thesemiconductor device structure 1000 comprises agate structure 1020 disposed on a surface of thesemiconductor substrate 1010. Thegate structure 1020 has agate insulating layer 1024, agate metal layer 1025 and a trimmedgate electrode layer 1026. Adjacent to thegate structure 1020, one ormore sidewall spacers FIG. 10 explicitly illustrates an exemplary embodiment having twosidewall spacers gate structure 1020 at each side of thegate structure 1020, only one sidewall spacer or alternatively more than two sidewall spacers may be provided. - The illustrative embodiment depicted in
FIG. 10 shows aliner spacer 1062 being formed adjacent to the trimmedgate electrode layer 1026 and the layer stack of thegate insulating layer 1024 and thegate metal layer 1025 so as to cover thesurfaces gate metal layer 1025 that are not covered by the trimmedgate electrode layer 1026. Source anddrain extension regions 1074 are formed in thesemiconductor substrate 1010 in alignment with thegate insulating layer 1024 and thegate metal layer 1025. Thesidewall spacers drain extension regions 1074 such that portions of thesidewall spacers drain extension regions 1074 so as to partially cover the source anddrain extension regions 1074. According to an illustrative example, theliner spacer 1062 may have a substantially deformed “W” shape as depicted inFIG. 10 . According to some illustrative embodiments, a thickness of theliner spacer 1062 may be in a range of about 1-10 nm or in a range of about 2-5 nm. - According to an illustrative example, the
semiconductor device structure 1000 may be obtained subsequent to forming thegate structure 920 ofFIG. 9 by forming one or more sidewall spacers adjacent to thegate structure 920 ofFIG. 9 . The person skilled in the art will appreciate that forming one or more sidewall spacers may comprise forming a spacer by depositing a spacer-forming material having a thickness corresponding to thedistance 950 inFIG. 9 depicting gate electrode material of the gate electrode layer which was removed when performing the trimming process for forming the trimmedgate electrode layer 926 which is depicted inFIG. 9 . Alternatively, a thickness of a deposited spacer-forming material may be greater than thedistance 950 ofFIG. 9 . -
FIG. 11 shows a semiconductor device structure during middle-end-of-line (MEOL) fabrication process flow according to some illustrative embodiments of the present disclosure. -
FIG. 11 shows asemiconductor substrate 1100 and twogate structures semiconductor substrate 1100. Source/drain regions semiconductor substrate 1100 adjacent to each of thegate structures gate structure 1120 has agate insulating layer 1124, a trimmedgate electrode layer 1126 and agate silicide 1164 formed on the trimmedgate electrode layer 1126. Although for ease of illustration only thegate insulating layer 1124 is explicitly depicted, no limitation of the present disclosure is intended. It is noted that the depictedlayer 1124 may be comprised of a gate insulating layer and a gate metal layer formed on the gate insulating layer in accordance with the preceding description.Sidewall spacers 1128 are formed at each side of thegate structure 1120 such thatsurfaces 1134 of thelayer 1124 are covered by thesidewall spacers 1128 which surfaces 1134 are not covered by the trimmedgate electrode layer 1126. - Accordingly, the
gate structure 1140 has agate insulating layer 1144, a trimmedgate electrode layer 1146 and agate silicide 1168 formed on the trimmedgate electrode layer 1146. Although for ease of illustration only thegate insulating layer 1144 is explicitly depicted, no limitation of the present disclosure is intended. It is noted that the depictedlayer 1144 may be comprised of a gate insulating layer and a gate metal layer formed on the gate insulating layer in accordance with the preceding description.Sidewall spacers 1148 are formed at each side of the trimmedgate structure 1140 such thatsurfaces 1134 of thelayer 1144 are covered by thesidewall spacers 1148 which surfaces 1134 are not covered by the trimmedgate electrode layer 1146. - A length of the
gate insulating layer 1124 is represented by anarrow 1122, while a length of thegate insulating layer 1144 is represented by anarrow 1142. The person skilled in the art will appreciate thatarrows respective gate structures gate structures gate electrode layers respective channel lengths contact 1160 schematically represents a contact for contacting the source and drain of a transistor structure comprising one of thegate electrode structures contact 1160 is disposed on the source or drainregion 1114. According to the illustration inFIG. 11 , a CPP is schematically depicted as a pitch between the source anddrain regions - The contact geometry in accordance with the illustrative embodiment as depicted in
FIG. 11 is further parameterized by two parameters, “a” and “b”, wherein the parameter “b” characterizes a distance between thecontact 1160 and thegate insulating layer 1124 of the trimmedgate structure 1120, and the parameter “a” characterizes a distance between thecontact 1160 and thegate silicide 1164 of thegate structure 1120. Due to the trimmedgate electrode layer 1126 of thegate structure 1120, the parameter “a” is expected to be greater or equal to the parameter “b” for a given CPP. The person skilled in the art will appreciate that the parameter “a” may be increased relative to the prior art parameter “a” inFIG. 1 without affecting the source/drain contact 1160 and, in particular, without affecting the contact resistance of thecontact 1160. - With regard to
FIGS. 12 and 13 , some alternative illustrative embodiments of the present disclosure will be described.FIG. 12 shows asemiconductor device structure 1200 and asemiconductor substrate 1210. Thesemiconductor device structure 1200 has agate structure 1220 formed on a surface of thesemiconductor substrate 1210. Thegate structure 1220 comprises agate insulating layer 1224, agate metal layer 1225 and agate electrode layer 1226. Adjacent to thegate structure 1220, asidewall spacer structure 1248 is formed at each side of thegate structure 1220. - The person skilled in the art will appreciate that the
semiconductor device structure 1200 as depicted inFIG. 12 may correspond to a configuration which is explained with regard toFIG. 6 above. It is further noted that thesemiconductor device structure 1200 may alternatively correspond to thesemiconductor device structure 700 as described with regard toFIG. 7 , althoughFIG. 12 does not explicitly illustrate source and drain extension regions. - Next, a
trimming process 1230 may be applied to thesemiconductor device structure 1200 in order to provide thesemiconductor device structure 1300 as depicted inFIG. 13 . - When applying the
trimming process 1230, a trimmedgate structure 1320 is formed. As illustrated inFIG. 13 , the trimmedelectrode structure 1320 is disposed on a surface of asemiconductor substrate 1310. The trimmedgate structure 1320 comprises agate insulating layer 1324, agate metal layer 1325 and a trimmedgate electrode layer 1326. At each side of the trimmedgate structure 1320, a trimmedsidewall spacer structure 1348 is formed. - The trimming process (1230 in
FIG. 12 ) may be configured such that the top part of the trimmedgate electrode layer 1326 assumes a shape of a rounded tip. The person skilled in the art will appreciate that, due to the trimming process (1230 inFIG. 12 ), a space for contacts to land during subsequent processing between two adjacent gate structures may be increased. - According to some illustrative embodiments herein, the etch process may comprise shaping the top part of polysilicon, wherein the
gate insulating layer 1324 and thegate metal layer 1325 are protected by spacer material. According to a special example herein, it is possible to incorporate anisotropic physical etch components like Ar-ions which are accelerated to the wafer surface and then physically removing polysilicon at its top portion by momentum transfer from Ar-ions to polysilicon atoms. - As depicted in
FIG. 13 , the trimming process (1230 inFIG. 12 ) may not only affect the trimmedgate electrode layer 1326, but may also affect the trimmedsidewall spacer structure 1348 such that at least one sidewall spacer may be etched back. When etching back one or more sidewall spacers, a top portion of thegate electrode layer 1326 may be exposed such that the top portion of thegate electrode layer 1326 may be as well trimmed back with further trimming. According to an illustrative embodiment, a gate electrode layer with a rounded tip portion may be obtained instead of a more or less flattened top portion as in the prior art. - The person skilled in the art will appreciate that the alternative illustrative embodiments as described with regard to
FIGS. 12 and 13 may result in an increased distance between an upper portion of a gate structure (for example an upper portion of thegate structure 1320 inFIG. 13 ) and a source/drain contact (corresponding to 1160 inFIG. 11 ) such that a respective parameter “a” may be increased while substantially maintaining a parameter “b” such that a relation such as “a” greater than or equal to “b” may be obtained in a contact geometry according to these alternative embodiments. - The person skilled in the art will appreciate that overall boundary conditions for reducing a length dimension, i.e., a length, of a gate electrode layer may be obtained in various illustrative embodiments of the present disclosure such that the reduced length of the gate electrode layer may still remain big enough so that contacts can land on silicide portions formed on gate electrode layers without decreasing contact CDs and negatively affecting contact resistances.
- The person skilled in the art will appreciate that the application of the present disclosure may result in an increased margin for contacts to land which may be a huge benefit contributing to existing technology nodes at 32 nm and 28 nm.
- The present disclosure provides methods for forming a semiconductor device. In some illustrative embodiments, a gate structure is formed, the gate structure comprising a gate insulating layer and a gate electrode structure formed on the gate insulating layer. The methods provide reducing a dimension of the gate electrode structure relative to the gate insulating layer along a direction extending in parallel to a direction connecting source and drain. The present disclosure further provides a semiconductor device structure with a gate structure. The gate structure comprises a gate insulating layer and a gate electrode structure formed above the gate insulating layer, wherein a dimension of the gate electrode structure extending along a direction which is substantially parallel to a direction being oriented from source to drain is reduced relative to a dimension of the gate insulating layer along the direction. According to some illustrative examples, gate structures are provided having a gate silicon length which is decoupled from the channel width induced by the gate structure. According to some illustrative embodiments, a spacer structure may be disposed on an upper surface portion of the gate insulating layer, the upper surface portion being substantially parallel to a surface of the semiconductor substrate which is covered by the gate structure. According to other illustrative embodiments, the gate electrode structure may have a rounded tip portion.
- The particular embodiments disclosed above are illustrative only, as the invention may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein. For example, the process steps set forth above may be performed in a different order. Furthermore, no limitations are intended to the details of construction or design herein shown, other than as described in the claims below. It is therefore evident that the particular embodiments disclosed above may be altered or modified and all such variations are considered within the scope and spirit of the invention. Accordingly, the protection sought herein is as set forth in the claims below.
Claims (20)
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US15/201,838 US20160315162A1 (en) | 2013-03-11 | 2016-07-05 | Contact geometry having a gate silicon length decoupled from a transistor length |
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US13/792,730 US9412859B2 (en) | 2013-03-11 | 2013-03-11 | Contact geometry having a gate silicon length decoupled from a transistor length |
US15/201,838 US20160315162A1 (en) | 2013-03-11 | 2016-07-05 | Contact geometry having a gate silicon length decoupled from a transistor length |
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US15/201,838 Abandoned US20160315162A1 (en) | 2013-03-11 | 2016-07-05 | Contact geometry having a gate silicon length decoupled from a transistor length |
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US (2) | US9412859B2 (en) |
CN (1) | CN104051251B (en) |
DE (1) | DE102014203796B4 (en) |
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TW (1) | TWI529815B (en) |
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US9412859B2 (en) * | 2013-03-11 | 2016-08-09 | Globalfoundries Inc. | Contact geometry having a gate silicon length decoupled from a transistor length |
CN203910808U (en) * | 2013-10-30 | 2014-10-29 | 英飞凌科技奥地利有限公司 | Semiconductor device |
US9177875B2 (en) | 2013-11-15 | 2015-11-03 | Taiwan Seminconductor Manufacturing Co., Ltd. | Advanced process control method for controlling width of spacer and dummy sidewall in semiconductor device |
US9412667B2 (en) | 2014-11-25 | 2016-08-09 | International Business Machines Corporation | Asymmetric high-k dielectric for reducing gate induced drain leakage |
US10211205B2 (en) | 2016-04-27 | 2019-02-19 | International Business Machines Corporation | Field effect transistor structure for reducing contact resistance |
CN108987399A (en) * | 2017-06-05 | 2018-12-11 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and its manufacturing method |
CN110571189B (en) * | 2018-06-05 | 2022-04-29 | 中芯国际集成电路制造(上海)有限公司 | Conductive plug and forming method thereof and integrated circuit |
TWI685085B (en) * | 2019-02-26 | 2020-02-11 | 華邦電子股份有限公司 | Memory device and method of manufacturing the same |
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Also Published As
Publication number | Publication date |
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CN104051251B (en) | 2017-04-12 |
US9412859B2 (en) | 2016-08-09 |
SG2014008924A (en) | 2014-10-30 |
CN104051251A (en) | 2014-09-17 |
US20140252429A1 (en) | 2014-09-11 |
DE102014203796A1 (en) | 2014-09-11 |
DE102014203796B4 (en) | 2016-03-03 |
TW201442123A (en) | 2014-11-01 |
TWI529815B (en) | 2016-04-11 |
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