US20160315008A1 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- US20160315008A1 US20160315008A1 US15/176,142 US201615176142A US2016315008A1 US 20160315008 A1 US20160315008 A1 US 20160315008A1 US 201615176142 A US201615176142 A US 201615176142A US 2016315008 A1 US2016315008 A1 US 2016315008A1
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- gate structures
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000005530 etching Methods 0.000 claims description 32
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 238000000034 method Methods 0.000 description 65
- 239000010410 layer Substances 0.000 description 57
- 238000004519 manufacturing process Methods 0.000 description 23
- 239000011800 void material Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 241001272720 Medialuna californiensis Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- -1 silicon carbide nitride Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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Abstract
Description
- This application is a division of application Ser. No. 14/691,586 filed on Apr. 21, 2015, now allowed, which is incorporated by reference herein in its entirety.
- 1. Field of the Invention
- The present invention relates to a semiconductor device, and more particularly, to a semiconductor device including a self-aligned conductive structure.
- 2. Description of the Prior Art
- The development of semiconductor integrated circuit technology progresses continuously and circuit designs in products of the new generation become smaller and more complicated than those of the former generation. The amount and the density of the functional devices in each chip region are increased constantly according to the requirements of innovated products, and the size of each device has to become smaller accordingly. For example, in field effect transistors, the spacing between gate lines becomes smaller for enhancing the integrity of the integrated circuit. However, it is difficult to form conductive plugs in the extremely small space between the gate lines because of the exposure limitation of the photolithography process, and mis-alignments occurred in the photolithography process for forming the conductive plugs between the gate lines may result in yield loss because the process window is too limited.
- According to the claimed invention, a semiconductor device is provided. The semiconductor device includes a semiconductor structure, a plurality of gate structures, at least one source/drain structure, at least one trench, a dielectric pattern, and a conductive structure. The gate structures are disposed on the semiconductor structure. The source/drain structure is disposed between two adjacent gate structures. The trench is disposed between the two adjacent gate structures and corresponding to the source/drain structure. The dielectric pattern is disposed on sidewalls of the trench. The conductive structure is disposed in the trench and electrically connected to the source/drain structure. The conductive structure includes a first portion surrounded by the dielectric pattern and a second portion connected to the source/drain structure, and the first portion is disposed on the second portion. A width of the first portion is smaller than a width of the second portion.
- According to the manufacturing method of the conductive structure in the semiconductor device, the conductive structure between the gate structures may be formed and self-aligned because the air void is formed in the space between the gate structures before the opening penetrating the second dielectric layer is formed. The manufacturing yield and the process window may be enhanced accordingly.
- These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
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FIGS. 1-9 are schematic drawings illustrating a manufacturing method of a conductive structure in a semiconductor device according to a first embodiment of the present invention, wherein -
FIG. 2 is a schematic top view drawing ofFIG. 1 , -
FIG. 3 is a schematic drawing in a step subsequent toFIG. 1 , -
FIG. 4 is a schematic drawing in a step subsequent toFIG. 3 , -
FIG. 5 is a schematic drawing in a step subsequent toFIG. 4 , -
FIG. 6 is a schematic drawing illustrating a position relation between a first open pattern and second open patterns, -
FIG. 7 is a schematic drawing in a step subsequent toFIG. 5 , -
FIG. 8 is a schematic drawing in a step subsequent toFIG. 7 , and -
FIG. 9 is a schematic cross-sectional drawing taken along a line A-A′ inFIG. 8 . -
FIG. 10 is a schematic drawing illustrating a manufacturing method of a conductive structure in a semiconductor device according to a second embodiment of the present invention. -
FIGS. 11-13 are schematic drawings illustrating a manufacturing method of a conductive structure in a semiconductor device according to a third embodiment of the present invention, wherein -
FIG. 12 is a schematic drawing in a step subsequent toFIG. 11 , and -
FIG. 13 is a schematic drawing in a step subsequent toFIG. 12 . -
FIG. 14 is a schematic drawing illustrating a manufacturing method of a conductive structure in a semiconductor device according to a fourth embodiment of the present invention. - Please refer to
FIGS. 1-9 .FIGS. 1-9 are schematic drawings illustrating a manufacturing method of a conductive structure in a semiconductor device according to a first embodiment of the present invention. The manufacturing method of the conductive structure in this embodiment includes the following steps. As shown inFIG. 1 andFIG. 2 , asemiconductor structure 11 is formed on asubstrate 10. Thesubstrate 10 may include a silicon substrate, an epitaxial silicon substrate, a silicon germanium substrate, a silicon carbide substrate, or a silicon-on-insulator (SOI) substrate, but not limited thereto. Thesemiconductor structure 11 may be a semiconductor layer, a semiconductor fin structure, or other appropriate semiconductor structures. A plurality ofgate structures 12 are formed on thesemiconductor structure 11. In this embodiment, thegate structures 12 may include gate lines extending in a first direction D1, but not limited thereto. Thegate structures 12 are disposed parallel to one another and repeatedly in a second direction D2. The first direction D1 is substantially perpendicular to the second direction D2, but not limited thereto. A firstdielectric layer 15 is formed in space SP between thegate structures 12. In this embodiment, thegate structures 12 may include metal gate structures formed by a replacement metal gate process, but not limited thereto. A gate insulating layer (not shown) may be disposed between the metal gate structures and thesemiconductor structure 11. In addition,sidewall spacers 12S may be formed on two sidewalls of eachgate structure 12 in the second direction D2, at least one source/drain structure 13 may be formed between twoadjacent gate structures 12, and a contactetching stop layer 14 may be selectively formed in the space SP between thegate structures 12 and cover the source/drain structure 13. The material of thesidewall spacers 12S may include silicon nitride (SiN), silicon carbide nitride (SiCN), silicon-carbon-oxy-nitride (SiCON), or other appropriate insulating materials. The material of the contactetching stop layer 14 may include silicon nitride (SiN) or other appropriate insulating materials. In this embodiment, the source/drain structure 13 may include an epitaxial layer, a silicide layer, a doped region in thesemiconductor structure 11, or other appropriate types of source/drain structures. The contactetching stop layer 14 covers the source/drain structure 13 and partially disposed between the source/drain structure 13 and the firstdielectric layer 15 in a vertical direction D3. Additionally, aprotection layer 12C may be selectively formed on thegate structure 12, and a part of thesidewall spacers 12S may be formed on two sidewalls of theprotection layer 12C in the second direction D2, but not limited thereto. - As shown in
FIGS. 1-3 , a first process is then performed to remove at least a part of the firstdielectric layer 15 in the space SP between thegate structures 12. Specifically, the first process may include forming a first patternedmask 16 on thegate structures 12, and the first patternedmask 16 includes at least one firstopen pattern 16H corresponding to a plurality of the spaces SP between thegate structures 12. For example, as shown inFIG. 1 andFIG. 2 , the firstopen pattern 16H is formed corresponding to three spaces SP between thegate structures 12, and the firstdielectric layers 15 in these three spaces SP are exposed by the firstopen pattern 16H. The first patternedmask 16 may be a patterned photoresist layer formed by a photolithography process, but not limited thereto. Subsequently, an etching process may be performed to remove the first dielectric layers 15 in the spaces SP exposed by the first patternedmask 16. The etching process in the first process may include an anisotropic etching process or an isotropic etching process. Preferably, the etching process in the first process may be a wet etching process with appropriate etching selectivity, so as to avoid damaging other parts which are not intended to be etched in the first process, such as theprotection layer 12C and the contactetching stop layer 14, but not limited thereto. Additionally, thefirst dielectric layer 15 may be a spin-on glass (SOG) material preferably, and the SOG material may then be quickly removed by the wet etching process mentioned above. The etching selectivity of the wet etching process for the SOG material to the metal material of thegate structure 12 may range between 1:100 and 1:500, and the etching selectivity of the wet etching process for the SOG material to silicon oxide may range between 1:15 and 1:40, but not limited thereto. Therefore, the contactetching stop layer 14 still covers the source/drain structure 13 after the first process preferably. - As shown in
FIGS. 1-3 , the firstopen pattern 16H in the first patternedmask 16 is formed corresponding to a plurality of the spaces SP between thegate structures 12. Therefore, when the dimension of the space SP between thegate structures 12 becomes extremely small and narrow, the firstopen pattern 16H in the first patternedmask 16 may still be relatively large and that is a benefit for the process forming the first patternedmask 16. For example, a photolithography process with relatively lower exposure resolution may be applied to form the first patternedmask 16. Additionally, the firstopen pattern 16H is not necessary to be exactly aligned with the spaces SP, and the firstopen pattern 16H may expose a part of theprotection layer 12C on thegate structure 12. The alignment tolerance of the process forming the first patternedmask 16 may become larger, and the process window may be improved accordingly. - The first patterned
mask 16 is then removed. As shown inFIG. 4 , asecond dielectric layer 17 is then formed and covers thegate structures 12 so as to form at least one air void V in the space SP between thegate structures 12. The air void V is formed above and corresponding to the source/drain structure 13. Thesecond dielectric layer 17 may be a single layer or a multiple-layered structure, and the materials or/and the forming process of thesecond dielectric layer 17 may be modified for presenting worse gap fill ability. For example, thesecond dielectric layer 17 may be formed by chemical vapor deposition for keeping the air void V in the space SP, but not limited thereto. - As shown in
FIGS. 5-7 , a second process is then performed to form at least oneopening 17H penetrating thesecond dielectric layer 17 and exposing the air void V. The material of thesecond dielectric layer 17 may include silicon nitride (SiN), silicon oxynitride (SiON) or other appropriate insulating materials. Specifically, the second process may include forming a second patternedmask 18 on thesecond dielectric layer 17, and the second patternedmask 18 includes a plurality of secondopen patterns 18H. Each of the secondopen patterns 18H is formed corresponding to only one of the air voids V in the space SP between thegate structures 12. In other words, each of secondopen patterns 18H overlaps only one air void V and only one space SP between thegate structures 12. The first open pattern in the first patterned mask mentioned before may completely overlap at least two of the secondopen patterns 18H. For example, as shown inFIG. 6 , in a position comparison between the firstopen pattern 16H and secondopen patterns 18H, the firstopen pattern 16H completely overlaps three of the secondopen patterns 18H, but the present invention is not limited to this. In other embodiments of the present invention, the firstopen pattern 16H may partially overlap a plurality of the secondopen patterns 18H. The second patternedmask 18 may be a patterned photoresist layer formed by a photolithography process, but not limited thereto. Photolithography processes with different exposure resolutions may be applied to form the second patternedmask 18 and the first patterned mask mentioned above respectively. For example, the first process may include a first exposure process for forming the first patternedmask 16 inFIG. 1 , and the second process may include a second exposure process for forming the second patternedmask 18. A wavelength of light used in the second exposure process may be shorter than a wavelength of light used in the first exposure process, but not limited thereto. For instance, a deep ultraviolet (DUV) light source (a wavelength of 193 nm) may be applied in the first exposure process, and an extreme ultraviolet (EUV) light source (a wavelength of 13.5 nm) may be applied in the second exposure process, but not limited thereto. In other embodiments of the present invention, the second patternedmask 18 may also be formed by other methods such as a multiple patterning by DUV, or an e-beam maskless lithography. The dimension of the air void V in the second direction D2 may be smaller than the minimum resolution of the exposure process of forming thegate structures 12 because thesidewall spacers 12S and the contactetching stop layer 14 are also formed in the space SP between thegate structures 12, the dimension of the secondopen pattern 18H will be larger than or equal to the minimum resolution of the second exposure process, and that is benefit for filling conductive materials self-aligned in the air void V. Additionally, theopening 17H may have tapered sidewalls for filling conductive materials in the air void V more easily. - As shown in
FIG. 7 , after the step of forming theopening 17H, the second process may include an etching process configured to remove at least a part of the contactetching stop layer 14 and exposing a part of the source/drain structure 13. In the second process of this embodiment, one or multiple etching processes may be used to form theopening 17H and remove a part of the contactetching stop layer 14 respectively. - As shown in
FIG. 7 andFIG. 8 , the air void V exposed by theopening 17H is then filled with at least oneconductive material 19 for forming aconductive structure 19P between thegate structures 12 in the second direction D2. Theconductive structure 19P contacts and is electrically connected to the source/drain structure 13 after theconductive structure 19P is formed. Because the air void V is formed above the source/drain structure 13, theconductive structure 19P formed in the air void V will be self-aligned to the source/drain structure 13. The second patternedmask 18 may be removed before or after the step of forming theconductive structure 19P. Thesecond dielectric layer 17 may also be partially or completely removed by a process such as a chemical mechanical polishing (CMP) process after the step of forming theconductive structure 19P. In addition, theconductive material 19 in theopening 17H may have a width wider than that of theconductive material 19 in the space SP, and other interconnect structures may be formed on theconductive structure 19P more easily, but not limited thereto. - As shown in
FIG. 8 andFIG. 9 , asemiconductor device 100 is formed by the above-mentioned manufacturing method. In thesemiconductor device 100, theconductive structure 19P extends in the first direction D1. In other words, theconductive structure 19P extends in a direction parallel to thegate structures 12. A length of theconductive structure 19P in the first direction D1 is smaller than a length of each of thegate structures 12 in the first direction D1. When thesemiconductor structure 11 is a semiconductor fin structure and thegate structures 12 are gate lines, thesemiconductor device 100 may be regarded as a fin field effect transistor, but the present invention is not limited to this. By the manufacturing method of this embodiment, the self-alignedconductive structure 19P may be formed in the extremely small space SP between thegate structures 12. The manufacturing yield and the process window may be enhanced accordingly. - Please refer to
FIG. 10 andFIG. 7 .FIG. 10 is a schematic drawing illustrating a manufacturing method of a conductive structure in a semiconductor device according to a second embodiment of the present invention.FIG. 7 may also be regarded as a schematic drawing in a step subsequent toFIG. 10 . As shown inFIG. 10 , the difference between the manufacturing method of this embodiment and the manufacturing method of the above-mentioned first embodiment (as shown inFIG. 5 ) is that only a part of thefirst dielectric layer 15 in the space SP between thegate structures 12 is removed by the first process, and the second process includes an etching process configured to remove thefirst dielectric layer 15 remained in the space SP between thegate structures 12 after the first process and expose a part of the source/drain structure 13. As shown inFIG. 10 andFIG. 7 , in the second process of this embodiment, one or multiple etching processes may be used to form theopening 17H, remove a part of the contactetching stop layer 14, and remove thefirst dielectric layer 15 remained in the space SP between thegate structures 12 after the first process respectively. In other words, thefirst dielectric layer 15 in the space SP between thegate structures 12 is not necessary to be completely removed by the first process, and the process window of the first process may be enhanced accordingly. - Please refer to
FIGS. 11-13 andFIG. 9 .FIGS. 11-13 are schematic drawings illustrating a manufacturing method of a conductive structure in a semiconductor device according to a third embodiment of the present invention.FIG. 9 may be regarded as a schematic cross-sectional drawing taken along a line B-B′ inFIG. 13 . As shown inFIG. 11 , the difference between the manufacturing method of this embodiment and the manufacturing method of the above-mentioned second embodiment is that a part of thesecond dielectric layer 17 is further formed in the space SP between thegate structures 12. The air void V in the space SP may be surrounded by thesecond dielectric layer 17, but not limited thereto. - Subsequently, as shown in
FIGS. 11-12 , thesecond dielectric layer 17 is remained in the space SP between thegate structures 12 after the step of forming theopenings 17H. It is worth noting that the remainedsecond dielectric layer 17 may be used as a mask in the etching process configured to remove thefirst dielectric layer 15 remained in the space SP between thegate structures 12 after the first process and expose a part of the source/drain structure 13, but not limited thereto. Thesecond dielectric layer 17 is remained in the space SP may be regarded as adielectric pattern 17P formed on sidewalls SW of a trench TR formed by the contactetching stop layer 14 and the source/drain structure 13. - As shown in
FIGS. 12-13 , the air void V exposed by theopening 17H is then filled with theconductive material 19 for forming theconductive structure 19P between thegate structures 12 in the second direction D2. Because the air void V is formed above the source/drain structure 13, theconductive structure 19P formed in the air void V will be self-aligned to the source/drain structure 13. Thesecond dielectric layer 17 is remained in the space SP between thegate structures 12 after the second process and theconductive structure 19P is formed, and thesecond dielectric layer 17 remained in the space SP surrounds at least a part of theconductive structure 19P. - As shown in
FIG. 13 , asemiconductor device 200 is formed by the manufacturing method of this embodiment. Thesemiconductor device 200 includes thesemiconductor structure 11, a plurality of thegate structures 12, a plurality of the source/drain structures 13, a plurality of the trenches TR, a plurality of thedielectric patterns 17P, and a plurality of theconductive structure 19P. Thegate structures 12 are disposed on thesemiconductor structure 11. Each of the source/drain structures 13 is disposed between twoadjacent gate structures 12. Each of the trenches TR is disposed between twoadjacent gate structures 12 and corresponding to one of the source/drain structures 13. Each of the dielectric patterns is disposed on the sidewalls SW of the corresponding trench TR. Each of the conductive structure is disposed in the corresponding trench TR and electrically connected to the corresponding source/drain structure 13. Each of theconductive structures 19P includes a first portion P1 surrounded by thedielectric pattern 17P and a second portion P2 connected to the source/drain structure 13, and the first portion P1 is disposed on the second portion P2. In this embodiment, a first width W1 of the first portion P1 in the second direction D2 is smaller than a second width W2 of the second portion P2. In other words, thedielectric pattern 17P in the trench TR only surrounds an upper part of theconductive structures 19P in the trench TR, but the present invention is not limited to this. In other embodiments of the present invention, thedielectric pattern 17P formed by thesecond dielectric layer 17 in the trench TR may completely surround theconductive structures 19P in the trench TR by removing all of the first dielectric layer in the first process mentioned above. Thesemiconductor device 200 may further includes a plurality of the sidewall spacers 12S and the contactetching stop layer 14. Thesidewall spacers 12S are disposed on sidewalls of each of thegate structures 12, and the contactetching stop layer 14 is disposed on a side surface of thesidewall spacer 12S. The contactetching stop layer 14 is disposed above the source/drain structure 13 in the space SP between thegate structures 12. In this embodiment, first bottom surfaces B1 of thesidewall spacers 12S directly contact thesemiconductor structure 11, and a second bottom surface B2 of the contactetching stop layer 14 directly contacts the source/drain structure 13. Thedielectric pattern 17P in the space SP is disposed on a side surface of the contactetching stop layer 14, and a third bottom surface B3 of thedielectric pattern 17P directly contacts theconductive structure 19P and is separated from the source/drain structure 13, but not limited thereto. - As shown in
FIG. 13 andFIG. 9 , in thesemiconductor device 200, thegate structures 12 are disposed parallel to one another and repeatedly in a second direction D2. Theconductive structure 19P extends in the first direction D1. In other words, theconductive structure 19P extends in a direction parallel to thegate structures 12. A length of theconductive structure 19P in the first direction D1 is smaller than a length of each of thegate structures 12 in the first direction D1. When thesemiconductor structure 11 is a semiconductor fin structure and thegate structures 12 are gate lines, thesemiconductor device 200 may be regarded as a fin field effect transistor, but the present invention is not limited to this. - Please refer to
FIG. 14 .FIG. 14 is a schematic drawing illustrating a manufacturing method of a conductive structure in asemiconductor device 300 according to a fourth embodiment of the present invention. As shown inFIG. 14 , the difference between the manufacturing method of this embodiment and the manufacturing method of the above-mentioned third embodiment is that an upper part of the sidewall spacers 12S, an upper part of the contactetching stop layer 14, and an upper part of thesecond dielectric layer 17 in the space SP between thegate structures 12 are removed in the second process. Therefore, theconductive structure 19P subsequently formed may further include a third portion P3 disposed above the first portion P1 in the space SP between thegate structures 12. The third portion P3 may have a half-moon or crescent shape, and a width of the third portion in the second direction D2 may be larger than a width of the second portion P2, but not limited thereto. - To summarize the above descriptions, in the manufacturing method of the conductive structure in the semiconductor device, the conductive structure between the gate structures is formed and self-aligned to the source/drain structure because the air void is formed in the space between the gate structures before the opening penetrating the second dielectric layer is formed. The manufacturing yield and the process window may be enhanced accordingly.
- Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims (5)
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US9496176B1 (en) | 2016-11-15 |
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