US20160300940A1 - Monolithic integrated circuit (mmic) structure having composite etch stop layer and method for forming such structure - Google Patents

Monolithic integrated circuit (mmic) structure having composite etch stop layer and method for forming such structure Download PDF

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US20160300940A1
US20160300940A1 US14/683,812 US201514683812A US2016300940A1 US 20160300940 A1 US20160300940 A1 US 20160300940A1 US 201514683812 A US201514683812 A US 201514683812A US 2016300940 A1 US2016300940 A1 US 2016300940A1
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layer
etch stop
stop layer
electrode
over
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US9478652B1 (en
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Adrian D. Williams
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Raytheon Co
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Raytheon Co
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Priority to PCT/US2016/026563 priority patent/WO2016164666A1/en
Priority to EP16717767.4A priority patent/EP3281229B1/en
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

Definitions

  • This disclosure relates generally to a Monolithic Integrated Circuit (MMIC) Structure and to a method for selectively etching a dielectric layer using an underling etch stop layer to protect an underling active device passivation layer.
  • MMIC Monolithic Integrated Circuit
  • MMICs monolithic microwave integrated circuits
  • PECVD plasma enhanced chemical vapor deposition
  • the etch stop layer is formed as a composite structure, comprising: a first etch stop layer on the passivation layer, a buffer layer on the first etch stop layer, and a second etch stop layer on the buffer layer.
  • the etch stop layer described in the above referenced U.S. Patent Application Publication 2014/0284661 was subject to attack from other commonly used process chemicals in standard MMIC fabrication such as ammonia and photoresist developer.
  • a buffer such as, for example, a silicon dioxide interlayer
  • the residual etch stop material can be removed by timed exposure to ammonia since ammonia acts as a highly selective etchant to Atomic Layer Deposition (ALD) deposited aluminum oxide to PECVD nitride. This removal mitigates impact to RF performance of any residual dielectric associated with the etch-stop layer.
  • ALD Atomic Layer Deposition
  • the first etch stop layer is aluminum oxide.
  • the buffer layer is silicon dioxide
  • the second etch stop layer is aluminum oxide.
  • the transistor device is a field effect transistor.
  • the semiconductor layer is a semiconductor material.
  • the passivation layer is silicon nitride.
  • the dielectric layer is silicon nitride.
  • the dielectric layer is Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride
  • the first etch stop layer is an atomic layer deposited (ALD) layer.
  • ALD atomic layer deposited
  • the second etch stop layer is an atomic layer deposited (ALD) layer.
  • FIGS. 1A-1N are simplified, cross sectional diagrams of an MMIC at various steps in the fabrication thereof in accordance with the disclosure.
  • FIG. 1C ′ is an exploded view of a portion of an etch stop layer structure according to the disclosure used in the MMIC fabricated in accordance with FIGS. 1A-1N ;
  • FIGS. 2A and 2B are simplified, cross sectional diagrams of an MMIC at various steps in the fabrication thereof in accordance with an alternate embodiment of the disclosure.
  • a semiconductor structure 10 is shown having a substrate 11 , here for example silicon carbide with a GaN semiconductor layer 13 thereon and a additional semiconductor layer 12 on semiconductor layer 13 , layer 12 is here for example, a III-V semiconductor layer such as for example, here AlGaN. It should be understood that other semiconductors such GaAs, InP, for example, may be used on the suitable substrate.
  • the semiconductor layer 12 has a transistor device, 14 , here for example a field effect transistor (FET) device formed therein using any conventional processing to provide source and drain electrodes 16 , 18 , respectively as shown, in ohmic contact with the semiconductor layer 12 and a T-shaped gate electrode 20 in Schottky contact with the semiconductor layer 12 and a passivation layer 22 , here disposed over the source and drain electrodes 16 and 18 , and a portion of the semiconductor 12 as shown.
  • the passivation layer 22 is silicon nitride.
  • the gate electrode 20 controls the flow of carriers in the semiconductors layers 12 , 13 between the source and drain electrodes. It is noted that the silicon nitride layer 22 is spaced from the bottom portion of the vertical sides of the T-shaped gate 20 .
  • an additional layer 24 of silicon nitride is uniformly deposited over the entire structure shown in FIG. 1A , including the space in the layer 22 so that the additional layer abuts the bottom portion of the vertical sides of the T-shaped gate 20 .
  • the layer 24 is a 200 Angstrom thick layer of PECVD silicon nitride to provide gate 20 passivation.
  • an etch stop layer structure 26 is uniformly disposed by Atomic Layer Deposition (ALD) on the passivation layer 24 .
  • the etch stop layer structure 26 is a composite layer having: a first etch stop layer 26 a of here for example, aluminum oxide, on the passivation layer 24 , a buffer layer 26 b of here for example silicon dioxide on the first etch stop layer 26 a, and a second etch stop layer 26 c of here for example aluminum oxide on the buffer layer 26 b, as shown in FIG. 1C ′.
  • the first and second etch stop layers 26 a and 26 c are here for example, each 25 Angstrom thin layer of Atomic Layer Deposited (ALD) layer of aluminum oxide and layer 26 b is here for example, silicon dioxide having a thickness of, for example 10 Angstroms to 50 Angstroms.
  • ALD Atomic Layer Deposited
  • first level active device metallization processing begins by first forming a layer 27 of photoresist patterned as shown to have formed there-through windows 28 to expose portions of the etch-stop layer structure 26 and passivation layers 22 and 24 over the source and drain electrodes 16 , 18 while covering the other portions of the etch-stop layer 26 including the portion of the etch-stop layer 26 over the gate electrode 20 , as shown.
  • the gate electrode 20 terminates in a conductive gate pad, not shown, (out of the plane shown in FIG. 1D ) and this conductive gate pad is also exposed by the windows 28 in the photoresist layer 27 .
  • the structure with the windowed photoresist layer 27 is subjected to a dry, for example, plasma, or wet etch, to remove, in a first step, portions of the etch-stop layer 26 exposed by the windows 28 and then, in a second step, as shown in FIG. 1E , remove the portions of the underlying silicon nitride passivation layers 24 and 22 thereby exposing the source and drain electrodes 16 and 18 as well as the not shown, out of plane gate contact pad.
  • the photoresist layer 27 ( FIG. 1D ) is then stripped using any conventional removal technique, thereby leaving the structure shown in FIG. 1E .
  • a photoresist layer 30 is deposited and lithographically processed to have windows 32 formed therein to expose regions where a first level (level 1) metallization is to be formed.
  • This level 1 metallization will be used to form interconnects for the source and drain electrodes 16 , 18 , the gate contact pad (not shown and referred to above) as well as bottom electrodes for capacitors, to be described, and microwave transmission lines and coplanar ground plane structures of the MMIC to be formed.
  • metal 34 here for example, a stack of titanium/platinum/gold is deposited on the photoresist layer 30 ( FIG. 1F ) and through the windows 32 therein onto the aforementioned exposed source and drain electrodes 16 , 18 , on the aforementioned gate contact pad (not shown) as well as other portions here for example a portion 36 of the etch stop layer 26 where a capacitor is to be formed.
  • the photoresist layer 30 ( FIG. 1F ) is then stripped from the surface along with any metal 34 on top of layer 30 using any conventional removal technique, here including an ammonia wash, thereby resulting in the metal 34 thereon being lifted off the structure resulting in the structure shown in FIG. 1G .
  • a solvent pre-clean process is used to prepare the wafer surface for the PECVD silicon nitride layer 40 .
  • Such pre-cleans use chemical agents such as trichloroethylene, acetone, isopropanol, methanol, ammonia, etc.
  • the top-most aluminum oxide 26 c is attacked and is therefore compromised in its ability to act as a good etch stop layer in subsequent processing.
  • the silicon dioxide layer 26 b acts to protect the bottommost aluminum oxide layer 26 c, allowing for good gate and gate channel protection during the etch to be described in connection with FIG. 1J . It is also noted that the portions of the second etch stop layer 26 c under the metal layer section 34 a of metal layer 34 where the bottom plate of a capacitor is to be formed in a manner to be described, remains as it is protected by the metal layer section 34 a.
  • a photoresist layer 42 is deposited and photolithographically processed to have a window 44 formed therein, as shown in FIG. 1J , with the photoresist layer 42 remaining over the portions of metal 34 being used, as mentioned above, to provide a bottom plate 34 a for a capacitor to be formed.
  • the structure is exposed to a dry etch, such as for example, a plasma etch such as reactive ion etching (RIE) or inductively coupled plasma etching (ICP), using sulfur hexafluoride based plasma etchants, or a wet etch.
  • RIE reactive ion etching
  • ICP inductively coupled plasma etching
  • the etch process etches away the exposed portions of the silicon nitride layer 40 at a rate significantly greater than that to the underlying portions of the aluminum oxide layer 26 a, here for example 100 times greater; thus the aluminum oxide layer 26 a is considered an etch stop layer since the etching stops at the aluminum oxide layer 26 a, as indicated in FIG. 1K after removal of the photoresist layer 42 .
  • the same etch step that removes the exposed portions of the thick silicon nitride layer 40 also removes underlying portions of the silicon dioxide layer 26 b but the process still leaves the aluminum oxide layer 26 a, as shown in FIG. 1K .
  • the metal 34 disposed on the source and drain electrodes 16 , 18 as well as the metal 34 disposed on the out of plane gate conductor pad (not shown) referred to above exposed by the window also acts as an etch stop).
  • the second level (level 2) metallization process begins by depositing a photoresist layer 50 and pattering the photoresist layer 50 lithographically to have windows 52 formed there-through, as shown in FIG. 1L .
  • the windows 52 expose the metal 34 used for the source and drain electrode 16 , 18 , the gate conductor pad (not shown and described above) and the portion of the silicon nitride dielectric layer 40 over the bottom metal plate 34 a to be used as the dielectric for the capacitor being formed.
  • metal 56 here, for example, a stack of titanium/platinum/gold is deposited on the remaining portions of the photoresist layer 50 and on the metal 34 used on the source and drain electrodes 16 , 18 , the gate conductor pad (not shown and described above) and the portion of the silicon nitride dielectric layer 40 to be used for the capacitor being formed.
  • the photoresist layer 50 FIG. 1
  • any conventional removal technique here including an ammonia wash with the portions of the metal 56 thereon being lifted off the structure while the remaining portions of the metal 56 remain on the first-level metal 34 disposed on source and drain electrode metal 16 , 18 , the gate conductor pad (not shown and described above) and the portion of the silicon nitride dielectric disposed on first-level metal 34 , thereby completing the formation of the capacitor 60 , the upper plate being designated 56 a of the MMIC 62 ( FIG. 1M ).
  • the aluminum oxide layer 26 a is removed from regions unprotected by metal 34 or silicon nitride layer 40 , as shown in FIG. 1N , using dilute ammonia. This eliminates the presence of the etch stop layer in the active regions of the MMIC, specifically in the entire region between source and drain contacts, with includes the surface above the transistor channel regions and around the entire gate electrode.
  • the process described above may be modified so that the composite etch stop layer, shown in FIG. 1C ′, may be formed after the structure shown in FIG. 1G is formed rather than after the structure shown in FIG. 1B is formed.
  • the modified process would result in the structure shown in FIG. 2A .
  • the process described above in connection with FIG. 1N would therefore result in the structure shown in FIG. 2B .

Abstract

A method for forming a semiconductor structure having a transistor device with a control electrode for controlling a flow of carriers between a first electrode and a second electrode. A passivation layer is deposited over the first electrode, the second electrode and the control electrode. An etch stop layer is deposited on the passivation layer over the control electrode. The etch stop layer includes the etch stop layer comprising: a first etch stop layer on the passivation layer, a buffer layer on the first etch stop layer, and a second etch stop layer on the buffer layer. A dielectric layer is formed over the etch stop layer. A window is etched through a selected region in the dielectric layer over the control electrode, to expose a portion of the etch stop layer disposed over the control electrode. A metal layer is formed on a portion of the etch stop layer and the dielectric layer is also formed on the metal layer. A second metal layer is deposited on the portion of the dielectric layer formed on the first mentioned metal layer.

Description

    TECHNICAL FIELD
  • This disclosure relates generally to a Monolithic Integrated Circuit (MMIC) Structure and to a method for selectively etching a dielectric layer using an underling etch stop layer to protect an underling active device passivation layer.
    • BACKGROUND AND SUMMARY
  • As is known in the art, as monolithic microwave integrated circuits (MMICs) are designed to operate at ever higher frequencies, the effects of dielectric loading on various MMIC conduction paths (including gates and transmission lines) becomes more pronounced. The minimization of such loading is critical to achieving the desired gain performance.
  • As is also known in the art, plasma enhanced chemical vapor deposition (PECVD) is widely used for the deposition of silicon nitride, which may act as a passivation layer to passivate components, or act as a capacitor dielectric. This deposition technique however, coats regions of the MMIC where the presence of additional dielectric is not desired and adversely impacts device performance at the higher frequencies.
  • As described in co-pending patent application, Ser. No. 13/849,858, filed Mar. 25, 2013, published in U.S. Patent Application Publication 2014/0284661, published Sep. 25, 2014, assigned to the same assignee as the present patent application, a method was disclosed for forming a semiconductor structure, the entire subject matter thereof being incorporated herein by reference. The method included: providing a semiconductor layer with a transistor device having a control electrode for controlling a flow of carriers between a first electrode and a second electrode; depositing a passivation layer over the first electrode, the second electrode and the control electrode; depositing an etch stop layer on the passivation layer, such etch stop layer being disposed over the control electrode; forming a dielectric layer over the etch stop layer; and etching a window through a selected region in the dielectric layer over the control electrode, to expose a portion of the etch stop layer disposed over the control electrode.
  • In forming such structure it was discovered that chemicals used in the photolithographic processing effected the etch stop layer.
  • In accordance with this disclosure, the etch stop layer is formed as a composite structure, comprising: a first etch stop layer on the passivation layer, a buffer layer on the first etch stop layer, and a second etch stop layer on the buffer layer. With such an arrangement, chemicals used in the photolithographic processing while effecting the second etch stop layer are prevented from effecting the first etch stop layer by the buffer layer.
  • More particularly, it was found that the etch stop layer described in the above referenced U.S. Patent Application Publication 2014/0284661 was subject to attack from other commonly used process chemicals in standard MMIC fabrication such as ammonia and photoresist developer. Employing a buffer, such as, for example, a silicon dioxide interlayer, effectively creates a double-selective etch-stop layer that survives typical MMIC fabrication processing up to the point where etch-back is required. Post etch-back, it has been found that the residual etch stop material can be removed by timed exposure to ammonia since ammonia acts as a highly selective etchant to Atomic Layer Deposition (ALD) deposited aluminum oxide to PECVD nitride. This removal mitigates impact to RF performance of any residual dielectric associated with the etch-stop layer.
  • In one embodiment, the first etch stop layer is aluminum oxide.
  • In one embodiment the buffer layer is silicon dioxide;
  • In one embodiment, the second etch stop layer is aluminum oxide.
  • In one embodiment, the transistor device is a field effect transistor.
  • In one embodiment, the semiconductor layer is a semiconductor material.
  • In one embodiment, the passivation layer is silicon nitride.
  • In one embodiment, the dielectric layer is silicon nitride.
  • In one embodiment, the dielectric layer is Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride
  • In one embodiment, the first etch stop layer is an atomic layer deposited (ALD) layer.
  • In one embodiment, the second etch stop layer is an atomic layer deposited (ALD) layer.
  • The details of one or more embodiments of the disclosure are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the disclosure will be apparent from the description and drawings, and from the claims.
    • DESCRIPTION OF DRAWINGS
  • FIGS. 1A-1N are simplified, cross sectional diagrams of an MMIC at various steps in the fabrication thereof in accordance with the disclosure.
  • FIG. 1C′ is an exploded view of a portion of an etch stop layer structure according to the disclosure used in the MMIC fabricated in accordance with FIGS. 1A-1N; and
  • FIGS. 2A and 2B are simplified, cross sectional diagrams of an MMIC at various steps in the fabrication thereof in accordance with an alternate embodiment of the disclosure.
    •
  • Like reference symbols in the various drawings indicate like elements.
    • DETAILED DESCRIPTION
  • Referring now to FIG. 1A, a semiconductor structure 10 is shown having a substrate 11, here for example silicon carbide with a GaN semiconductor layer 13 thereon and a additional semiconductor layer 12 on semiconductor layer 13, layer 12 is here for example, a III-V semiconductor layer such as for example, here AlGaN. It should be understood that other semiconductors such GaAs, InP, for example, may be used on the suitable substrate. The semiconductor layer 12 has a transistor device, 14, here for example a field effect transistor (FET) device formed therein using any conventional processing to provide source and drain electrodes 16, 18, respectively as shown, in ohmic contact with the semiconductor layer 12 and a T-shaped gate electrode 20 in Schottky contact with the semiconductor layer 12 and a passivation layer 22, here disposed over the source and drain electrodes 16 and 18, and a portion of the semiconductor 12 as shown. Here for example the passivation layer 22 is silicon nitride. The gate electrode 20 controls the flow of carriers in the semiconductors layers 12, 13 between the source and drain electrodes. It is noted that the silicon nitride layer 22 is spaced from the bottom portion of the vertical sides of the T-shaped gate 20.
  • Next, referring to FIG. 1B, an additional layer 24 of silicon nitride is uniformly deposited over the entire structure shown in FIG. 1A, including the space in the layer 22 so that the additional layer abuts the bottom portion of the vertical sides of the T-shaped gate 20. Here, for example, the layer 24 is a 200 Angstrom thick layer of PECVD silicon nitride to provide gate 20 passivation.
  • Next, referring to FIG. 1C, an etch stop layer structure 26 is uniformly disposed by Atomic Layer Deposition (ALD) on the passivation layer 24. Here, the etch stop layer structure 26 is a composite layer having: a first etch stop layer 26 a of here for example, aluminum oxide, on the passivation layer 24, a buffer layer 26 b of here for example silicon dioxide on the first etch stop layer 26 a, and a second etch stop layer 26 c of here for example aluminum oxide on the buffer layer 26 b, as shown in FIG. 1C′. With such an arrangement, chemicals used in the photolithographic processing, to be described, while effecting the second etch stop layer 26 c are prevented from effecting the first etch stop layer 26 a by the buffer layer 26 b. Here, the first and second etch stop layers 26 a and 26 c are here for example, each 25 Angstrom thin layer of Atomic Layer Deposited (ALD) layer of aluminum oxide and layer 26 b is here for example, silicon dioxide having a thickness of, for example 10 Angstroms to 50 Angstroms.
  • Next, referring to FIG. 1D, first level active device metallization processing begins by first forming a layer 27 of photoresist patterned as shown to have formed there-through windows 28 to expose portions of the etch-stop layer structure 26 and passivation layers 22 and 24 over the source and drain electrodes 16, 18 while covering the other portions of the etch-stop layer 26 including the portion of the etch-stop layer 26 over the gate electrode 20, as shown. It is noted that the gate electrode 20 terminates in a conductive gate pad, not shown, (out of the plane shown in FIG. 1D) and this conductive gate pad is also exposed by the windows 28 in the photoresist layer 27. The structure with the windowed photoresist layer 27, as shown, is subjected to a dry, for example, plasma, or wet etch, to remove, in a first step, portions of the etch-stop layer 26 exposed by the windows 28 and then, in a second step, as shown in FIG. 1E, remove the portions of the underlying silicon nitride passivation layers 24 and 22 thereby exposing the source and drain electrodes 16 and 18 as well as the not shown, out of plane gate contact pad. The photoresist layer 27 (FIG. 1D) is then stripped using any conventional removal technique, thereby leaving the structure shown in FIG. 1E.
  • Next, referring to FIG. 1F, a photoresist layer 30 is deposited and lithographically processed to have windows 32 formed therein to expose regions where a first level (level 1) metallization is to be formed. This level 1 metallization will be used to form interconnects for the source and drain electrodes 16, 18, the gate contact pad (not shown and referred to above) as well as bottom electrodes for capacitors, to be described, and microwave transmission lines and coplanar ground plane structures of the MMIC to be formed.
  • Referring now also to FIG. 1G, metal 34, here for example, a stack of titanium/platinum/gold is deposited on the photoresist layer 30 (FIG. 1F) and through the windows 32 therein onto the aforementioned exposed source and drain electrodes 16, 18, on the aforementioned gate contact pad (not shown) as well as other portions here for example a portion 36 of the etch stop layer 26 where a capacitor is to be formed. The photoresist layer 30 (FIG. 1F) is then stripped from the surface along with any metal 34 on top of layer 30 using any conventional removal technique, here including an ammonia wash, thereby resulting in the metal 34 thereon being lifted off the structure resulting in the structure shown in FIG. 1G.
  • Next, exposed portions of the second etch stop layer 26 c of ALD aluminum oxide layer are removed to clean the top surface of the wafer prior to depositing a PECVD silicon nitride layer 40 (FIG. 11). More particularly, prior to depositing the PECVD silicon nitride layer 40, a solvent pre-clean process is used to prepare the wafer surface for the PECVD silicon nitride layer 40. Such pre-cleans use chemical agents such as trichloroethylene, acetone, isopropanol, methanol, ammonia, etc. During the pre-clean procedure, the top-most aluminum oxide 26 c is attacked and is therefore compromised in its ability to act as a good etch stop layer in subsequent processing. However, the silicon dioxide layer 26 b acts to protect the bottommost aluminum oxide layer 26 c, allowing for good gate and gate channel protection during the etch to be described in connection with FIG. 1J. It is also noted that the portions of the second etch stop layer 26 c under the metal layer section 34 a of metal layer 34 where the bottom plate of a capacitor is to be formed in a manner to be described, remains as it is protected by the metal layer section 34 a.
  • Next, a photoresist layer 42 is deposited and photolithographically processed to have a window 44 formed therein, as shown in FIG. 1J, with the photoresist layer 42 remaining over the portions of metal 34 being used, as mentioned above, to provide a bottom plate 34 a for a capacitor to be formed. The structure is exposed to a dry etch, such as for example, a plasma etch such as reactive ion etching (RIE) or inductively coupled plasma etching (ICP), using sulfur hexafluoride based plasma etchants, or a wet etch. It is noted that the etch process etches away the exposed portions of the silicon nitride layer 40 at a rate significantly greater than that to the underlying portions of the aluminum oxide layer 26 a, here for example 100 times greater; thus the aluminum oxide layer 26 a is considered an etch stop layer since the etching stops at the aluminum oxide layer 26 a, as indicated in FIG. 1K after removal of the photoresist layer 42. It is noted that the same etch step that removes the exposed portions of the thick silicon nitride layer 40 also removes underlying portions of the silicon dioxide layer 26 b but the process still leaves the aluminum oxide layer 26 a, as shown in FIG. 1K. (It is noted that the metal 34 disposed on the source and drain electrodes 16, 18 as well as the metal 34 disposed on the out of plane gate conductor pad (not shown) referred to above exposed by the window also acts as an etch stop).
  • Next, the second level (level 2) metallization process begins by depositing a photoresist layer 50 and pattering the photoresist layer 50 lithographically to have windows 52 formed there-through, as shown in FIG. 1L. The windows 52 expose the metal 34 used for the source and drain electrode 16, 18, the gate conductor pad (not shown and described above) and the portion of the silicon nitride dielectric layer 40 over the bottom metal plate 34 a to be used as the dielectric for the capacitor being formed. Next metal 56, here, for example, a stack of titanium/platinum/gold is deposited on the remaining portions of the photoresist layer 50 and on the metal 34 used on the source and drain electrodes 16, 18, the gate conductor pad (not shown and described above) and the portion of the silicon nitride dielectric layer 40 to be used for the capacitor being formed. Next, the photoresist layer 50 (FIG. 1L) is stripped using any conventional removal technique, here including an ammonia wash with the portions of the metal 56 thereon being lifted off the structure while the remaining portions of the metal 56 remain on the first-level metal 34 disposed on source and drain electrode metal 16,18, the gate conductor pad (not shown and described above) and the portion of the silicon nitride dielectric disposed on first-level metal 34, thereby completing the formation of the capacitor 60, the upper plate being designated 56 a of the MMIC 62 (FIG. 1M).
  • Next, the aluminum oxide layer 26 a is removed from regions unprotected by metal 34 or silicon nitride layer 40, as shown in FIG. 1N, using dilute ammonia. This eliminates the presence of the etch stop layer in the active regions of the MMIC, specifically in the entire region between source and drain contacts, with includes the surface above the transistor channel regions and around the entire gate electrode.
  • It should be noted that the process described above may be modified so that the composite etch stop layer, shown in FIG. 1C′, may be formed after the structure shown in FIG. 1G is formed rather than after the structure shown in FIG. 1B is formed. In such case, structure after performing the process described above in connection with FIGS. 1H-1M, the modified process would result in the structure shown in FIG. 2A. The process described above in connection with FIG. 1N would therefore result in the structure shown in FIG. 2B.
  • A number of embodiments of the disclosure have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the disclosure. For example, the method may be used with bipolar transistors. Accordingly, other embodiments are within the scope of the following claims.

Claims (19)

What is claimed is:
1. A method for forming a semiconductor structure, comprising
providing a semiconductor layer with a transistor device having a control electrode for controlling a flow of carriers between a first electrode and a second electrode;
depositing a passivation layer over the first electrode, the second electrode and the control electrode;
depositing an etch stop layer on the passivation layer, such etch stop layer being disposed over the control electrode, the etch stop layer comprising: a first etch stop layer on the passivation layer, a buffer layer on the first etch stop layer, and a second etch stop layer on the buffer layer;
forming a dielectric layer over the etch stop layer; and
etching a window through a selected region in the dielectric layer over the control electrode, to expose a portion of the etch stop layer disposed over the control electrode.
2. The method recited in claim 1 including:
forming a metal layer on a portion of the etch stop layer; and
wherein the dielectric layer is also formed on the metal layer.
3. The method recited in claim 2 including depositing a second metal layer on the portion of the dielectric layer formed on the first mentioned metal layer
4. The method recited in claim 3 wherein the transistor device is a field effect transistor.
5. The method recited in claim 3 wherein the semiconductor layer is a semiconductor material.
6. The method recited in claim 3 wherein the passivation layer is silicon nitride.
7. The method recited in claim 3 wherein the dielectric layer is silicon nitride.
8. The method recited in claim 7 wherein the dielectric layer is Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride
9. The method recited in claim 1 wherein the etch stop layer is an atomic layer deposited (ADD) layer.
10. The method recited in claim 9 wherein the etching comprises using reactive ion etching (RIE) or inductively coupled plasma (ICP) etching and photoresist patterning.
11. The method recited in claim 10 wherein the etching uses sulfur hexafluoride based plasma etchants.
12. A method for forming a semiconductor structure comprising;
providing a III-V semiconductor layer with source and drain electrodes in ohmic contact with the semiconductor layer and a gate electrode in Schottky contact with the semiconductor layer;
depositing a passivation layer over the source, drain and gate electrodes,
depositing an etch stop layer on the passivation layer;
forming a dielectric layer over the etch stop layer, the etch stop layer comprising: a first etch stop layer on the passivation layer, a buffer layer on the first etch stop layer, and a second etch stop layer on the buffer layer;
forming a window in the dielectric layer exposing a portion of the etch stop layer deposed over the gate electrode.
13. A semiconductor structure comprising;
a III-V semiconductor layer;
source and drain electrodes in ohmic contact with the semiconductor layer;
a gate electrode in Schottky contact with the semiconductor layer;
a passivation layer disposed over the source, drain and gate electrodes,
an etch stop layer disposed on the passivation layer, the etch stop layer comprising: a first etch stop layer on the passivation layer, a buffer layer on the first etch stop layer, and a second etch stop layer on the buffer layer;
a dielectric layer disposed on a first portion of the etch stop layer, the dielectric layer having a window therein, such window exposing a second portion of the etch stop layer.
14. The semiconductor structure recited in claim 13 wherein the etch stop layer is disposed over portions of the source and drain electrodes.
15. The method recited in claim 1 wherein the etch stop layer is deposited over the first electrode and the second electrode.
16. The method recited in claim 15 wherein the etch stop layer is deposited over the source electrode and drain electrode.
17. A method for forming a semiconductor structure, comprising
providing a semiconductor layer with a transistor device having a control electrode for controlling a flow of carriers between a first electrode and a second electrode;
depositing a passivation layer over the first electrode, the second electrode and the control electrode;
depositing an etch stop layer on the passivation layer, such etch stop layer being disposed over the control electrode, the etch stop layer comprising: a first etch stop layer on the passivation layer, a buffer layer on the first etch stop layer, and a second etch stop layer on the buffer layer;
forming a dielectric layer over the etch stop layer;
etching a window through a selected region in the dielectric layer to expose the entire gate electrode and extends from the first electrode to the second electrodes.
18. The method recited in claim 1 wherein the portion of the etch stop layer disposed over the control electrode is removed.
19. The method recited in claim 18 wherein the portion of the etch stop layer disposed over the control electrode removal includes using an ammonia wash.
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US20170104033A1 (en) * 2015-10-13 2017-04-13 Shenzhen China Star Optoelectronics Technology Co., Ltd. Array substrate and manufacturing method for the same
JP2018073974A (en) * 2016-10-28 2018-05-10 三菱電機株式会社 Semiconductor device and method of manufacturing the same
CN115440592A (en) * 2022-09-01 2022-12-06 湖北九峰山实验室 High electron mobility transistor and manufacturing method thereof

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