US20160225666A1 - Forming merged lines in a metallization layer by replacing sacrificial lines with conductive lines - Google Patents
Forming merged lines in a metallization layer by replacing sacrificial lines with conductive lines Download PDFInfo
- Publication number
- US20160225666A1 US20160225666A1 US14/608,377 US201514608377A US2016225666A1 US 20160225666 A1 US20160225666 A1 US 20160225666A1 US 201514608377 A US201514608377 A US 201514608377A US 2016225666 A1 US2016225666 A1 US 2016225666A1
- Authority
- US
- United States
- Prior art keywords
- line
- recess
- lines
- hard mask
- sacrificial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3088—Process specially adapted to improve the resolution of the mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
Definitions
- the present disclosure generally relates to the fabrication of semiconductor devices, and, more particularly, to forming merged lines in a metallization layer.
- metallization layers i.e., the wiring layers including metal lines and vias for providing the electrical connection of the circuit elements according to a specified circuit layout
- metallization layers are formed by embedding copper lines and vias in a dielectric layer stack.
- the well-established and well-known dielectric materials silicon dioxide (k ⁇ 4.2) and silicon nitride (k>7) may increasingly be replaced by so-called low-k dielectric materials having a relative permittivity of approximately 3.0 and less.
- Copper lines and vias are typically formed by performing well-known damascene (single or dual) processes whereby trenches or openings are formed in a layer of insulating material.
- barrier layers are deposited in the trenches or openings followed by over-filling the trenches or openings with copper material.
- a planarization process is performed to remove the excess materials above the insulating material, thereby leaving the resulting line or via positioned in the previously formed trench or opening.
- the width of the lines is typically limited by the photolithography processes used to pattern the trenches in the layer of insulating material.
- the lines are formed of a material that may be directly patterned, e.g., tungsten, the width of the patterned lines is still limited by photolithography processes.
- a large number of evenly spaced lines are typically formed in a regular pattern.
- the width of each line and the pitch between lines is determined by the patterning process.
- SADP self-aligned double patterning
- a hard mask layer is formed above a dielectric layer and a plurality of mandrel line elements is formed above the hard mask layer.
- Spacers are formed on sidewalls of the mandrel and the mandrel is removed, leaving the spacers as an etch mask for patterning the hard mask layer.
- the pitch of the spacers is effectively double that of the mandrel elements.
- Another technique referred to as self-aligned quadruple patterning (SAQP) forms another set of spacers and removes the first set, effectively quadrupling the pitch of the mandrel elements.
- the patterned hard mask layer is used to etch trenches in the underlying dielectric layer, and the trenches are filled with metal to form the interconnect lines.
- the present disclosure is directed to various methods of forming merged lines in a metallization layer that may avoid, or at least reduce, the effects of one or more of the problems identified above.
- a method includes, among other things, forming a plurality of sacrificial lines embedded in a first dielectric layer formed above a substrate.
- a hard mask layer is formed above the first dielectric layer and the plurality of sacrificial lines.
- a line merge opening and a line cut opening are formed in the hard mask layer. Portions of the first dielectric layer exposed by the line merge opening are removed to define a line merge recess.
- a portion of a selected sacrificial line exposed by the line cut opening is removed to define a line cut recess between first and second segments of the selected sacrificial line.
- a second dielectric layer is formed in the line cut recess.
- the hard mask is removed.
- the plurality of sacrificial lines is replaced with a conductive material to define at least one line having third and fourth segments in locations previously occupied by the first and second segments, respectively, of the selected sacrificial line and to define a line-merging conductive structure in the line merge recess.
- Another illustrative method includes, among other things, forming a plurality of sacrificial lines embedded in a first dielectric layer formed above a substrate.
- a hard mask layer is formed above the first dielectric layer and the plurality of sacrificial lines.
- First and second openings are formed in the hard mask layer.
- a spacer layer is formed above the hard mask layer and at least partially in the first and second openings. The spacer layer is removed in the first opening while leaving a remainder portion of the spacer layer disposed in the second opening. Portions of the first dielectric layer exposed by the first opening are removed to define a line merge recess. The remainder portion of the spacer layer disposed in the second opening is removed.
- a portion of a selected sacrificial line exposed by the second opening is removed to define a line cut recess between first and second segments of the selected sacrificial line.
- a second dielectric layer is formed in the line cut recess.
- the plurality of sacrificial lines is replaced with a conductive material to define at least one line having third and fourth segments in locations previously occupied by the first and second segments, respectively, of the selected sacrificial line and to define a line-merging conductive structure in the line merge recess.
- FIGS. 1A-1Q are top views of a device depicting various illustrative methods disclosed herein for forming merged lines and cut lines;
- FIGS. 2A-2Q are cross-sectional views of the device corresponding to FIGS. 1A-1Q .
- the present disclosure generally relates to various methods of forming merged lines in a metallization layer. As will be readily apparent to those skilled in the art upon a complete reading of the present application, the present method is applicable to a variety of devices, including, but not limited to, logic devices, memory devices, etc. With reference to the attached figures, various illustrative embodiments of the methods and devices disclosed herein will now be described in more detail.
- FIGS. 1A-1Q and 2A-2Q illustrate a method for forming merged lines and cut lines in a device 100 using a combined etch mask.
- FIG. 1A shows a top view of the device 100 and FIG. 2A shows a corresponding cross-sectional view of the device 100 taken along line 2 A in FIG. 1A .
- the device 100 includes a substrate 105 .
- a device layer 110 is disposed above the substrate 105 .
- Semiconductor-based circuit elements such as transistors, resistors, capacitors, etc., may be formed in and above the substrate 105 .
- the device layer 110 also typically includes conductive contacts that interface with these circuit elements. For convenience, any such circuit elements and contacts are not shown in FIG. 2A .
- the substrate 105 may also include any appropriate microstructure features, such as micromechanical components, optoelectronic components and the like, wherein at least some of these components may require an interconnect structure formed in a metallization system.
- a dielectric layer 115 is formed above the device layer 110 (e.g., in a Metal 1 (M1) layer).
- the dielectric layer 115 may be a low-k dielectric material having a dielectric constant of approximately 3.0 or lower or an ultra-low-k (ULK) material having a dielectric constant of approximately 2.5 or lower.
- the dielectric layer 115 may be SiOC.
- Conductive lines 120 e.g., copper
- a cap layer 125 e.g., silicon nitride
- the conductive lines 120 may include multiple layers, such as one or more barrier layers (e.g., Ta, TaN, TiN, etc.) to prevent migration of any metal in the conductive lines 120 into the dielectric layer 115 , a metal seed layer (e.g., copper), and a metal fill material (e.g., copper).
- barrier layers e.g., Ta, TaN, TiN, etc.
- FIGS. 1B and 2B illustrate a top view and a cross-section view (along line 2 B), respectively, of the device 100 after a plurality of processes were performed so as to form a set of sacrificial lines 165 , each having a cap layer 170 (e.g., silicon nitride) formed thereabove.
- the sacrificial lines 165 are oriented perpendicularly with respect to the conductive lines 120 illustrated in FIG. 1A .
- the sacrificial lines 165 may be formed by patterning a layer of sacrificial material (e.g., amorphous silicon) using the cap layer 170 as a hard mask for a patterning process (e.g., self-aligned double patterning (SADP), self-aligned quad patterning (SAQD), or directed self-assembly material patterning), the specifics of which are known to those of ordinary skill in the art.
- a patterning process e.g., self-aligned double patterning (SADP), self-aligned quad patterning (SAQD), or directed self-assembly material patterning
- FIGS. 1C and 2C illustrate a top view and a cross-section view (along line 2 C), respectively, of the device 100 after a plurality of processes were performed so as to deposit a second dielectric layer 175 (e.g., in a Metal 2 (M2) layer) above the sacrificial lines 165 , and to planarize the second dielectric layer 175 using the cap layer 170 as a stop layer.
- a second dielectric layer 175 e.g., in a Metal 2 (M2) layer
- M2 Metal 2
- the material of the second dielectric layer 175 may be the same as that of the first dielectric layer 115 (e.g., SiOC).
- FIGS. 1D and 2D illustrate a top view and a cross-section view (along line 2 D), respectively, of the device 100 after an etch process (e.g., selective dry or wet etch) was performed to remove the cap layer 170 .
- an etch process e.g., selective dry or wet etch
- FIGS. 1E and 2E illustrate a top view and a cross-section view (along line 2 E), respectively, of the device 100 after a plurality of processes were performed so as to deposit a first hard mask layer 180 (e.g., silicon dioxide) and a second hard mask layer 185 (e.g., silicon nitride) above the second dielectric layer 175 and a patterning process was performed (e.g., using a patterned photoresist layer) to define a line merge opening 190 and a line cut opening 195 in the hard mask layers 180 , 185 .
- the hard mask layers 180 , 185 are illustrated as having planar top surfaces with the cap layer 180 extending into the recesses created by removal of the cap layer 170 . However, in an actual implementation, the cap layers 180 , 185 would be conformal.
- FIGS. 1F and 2F illustrate a top view and a cross-section view (along line 2 F), respectively, of the device 100 after a deposition process was performed to deposit a spacer layer 200 (e.g., silicon nitride) above the cap layer 185 and in the openings 190 , 195 . Due to the greater aspect ratio of the opening 195 , it may be almost entirely filled by the spacer layer 200 .
- a spacer layer 200 e.g., silicon nitride
- FIGS. 1G and 2G illustrate a top view and a cross-section view (along line 2 G), respectively, of the device 100 after an etch process was performed to etch the spacer layer 200 and a portion of the cap layer 185 to clear the opening 190 and expose the sacrificial lines 165 , while leaving the opening 195 at least partially filled by a remainder portion of the spacer layer 200 .
- the opening 195 remains at least partially plugged due to its higher aspect ratio.
- the openings 190 , 195 are sized such that some of the material of the spacer layer 200 remains in position in the opening 195 after the spacer material is removed from the opening 190 .
- the thickness of the spacer layer 200 may be about half the width, W, of the opening 195 , as illustrated in FIG. 1F .
- FIGS. 1H and 2H illustrate a top view and a cross-section view (along line 2 H), respectively, of the device 100 after an anisotropic etch process was performed to remove the portions of the dielectric layer 175 exposed by the opening 190 and thereby define an opening 175 A in the dielectric layer 175 .
- This process operation exposes the underlying cap layer 125 .
- the spacer material 200 in the opening 195 protects the underlying materials and structures during this etching process.
- FIGS. 1I and 2I illustrate a top view and a cross-section view (along line 2 I), respectively, of the device 100 after an anisotropic etch process was performed to remove the portions of the sacrificial lines 165 exposed by the opening 190 .
- the etch process to remove the exposed portions of the sacrificial lines 165 is referred to as a “line merge etch” as it creates a line merge recess 192 in the dielectric layer 175 having a width, W LM , that is greater than the combined widths of the sacrificial lines 165 (e.g., 3 in the depicted example) that are removed when line merge recess 192 is formed and the exposed portions of the sacrificial lines 165 are cut or removed.
- the line merge recess 192 will be subsequently filled with conductive material to define a line-merging conductive structure an integer number of line widths.
- the opening 175 A in the dielectric layer 175 may be formed as in FIGS. 1H and 2H , but the exposed sacrificial lines 165 may not be removed immediately after that process operation. Instead, the sacrificial lines 165 may be removed at a later stage, as discussed more fully below.
- FIGS. 1J and 2J illustrate a top view and a cross-section view (along line 2 J), respectively, of the device 100 after a deposition process was performed to deposit a dielectric layer 205 (e.g., silicon dioxide) above the second hard mask layer 185 and in the line merge recess 192 and a planarization process was performed to remove portions of the dielectric layer 205 extending above the second hard mask layer 185 and to remove the second hard mask layer 185 , thereby exposing the first hard mask layer 180 .
- the opening 190 and the line merge recess 192 are filled by the dielectric layer 205 and the opening 195 is filled by the remainder portion of the spacer layer 200 .
- FIGS. 1K and 2K illustrate a top view and a cross-section view (along line 2 K), respectively, of the device 100 after a first etch process was performed to remove the remainder portion of the spacer layer 200 to reestablish the opening 195 and a second etch process was performed to remove the portion of the sacrificial line 165 exposed by the opening 195 to define a line cut recess 197 in the dielectric layer 175 that exposes the underlying layer 125 .
- the etch process for removing the exposed portion of the sacrificial line 165 is referred to as a “line cut etch” process as it separates the etched sacrificial lines 165 (shown in phantom) into segments 165 A, 165 B.
- the etch process for removing the remainder portion of the spacer layer 200 may be integrated with the line cut etch process.
- the line cut recess 197 only spans a single line in the illustrated example, it may be sized to cover more than one line.
- FIGS. 1L and 2L illustrate a top view and a cross-section view (along line 2 L), respectively, of the device 100 after a deposition process was performed to form a dielectric layer 210 (e.g., SiOC) in the opening 195 and to fill in the line cut recess 197 .
- a dielectric layer 210 e.g., SiOC
- FIGS. 1M and 2M illustrate a top view and a cross-section view (along line 2 M), respectively, of the device 100 after a timed etch process was performed to recess the dielectric layer 210 to expose the top surface of the hard mask layer 180 and the dielectric layer 205 .
- FIGS. 1N and 2N illustrate a top view and a cross-section view (along line 2 N), respectively, of the device 100 after one or more wet etching processes were performed to remove the dielectric layer 205 and the hard mask layer 180 .
- the dielectric layers 175 , 210 are SiOC
- a diluted HF etch solution may be used to remove silicon dioxide and silicon nitride selectively to the SiOC.
- the line merge recess 192 is sized such that it exposes the cap layers 125 that correspond to three illustrative conductive lines 120 in the M1 metallization layer.
- the line merge recess 192 may be sized such that the cap layers 125 of any desired number of conductive lines 120 may be exposed by the line merge recess 192 .
- FIGS. 1O and 2O illustrate a top view and a cross-section view (along line 2 O), respectively, of the device 100 after an etch process was performed to remove the sacrificial lines 165 thereby exposing the cap layers 125 of the underlying conductive lines 120 in the M1 layer.
- the sacrificial lines 165 in the line merge recess are not removed as described in reference to FIGS. 1I and 2I above, they may be removed here.
- FIGS. 1P and 2P illustrate a top view and a cross-section view (along line 2 P), respectively, of the device 100 after a plurality of processes were performed to establish a M1 to M2 interconnections.
- a photoresist layer (not shown) was formed and patterned to expose a selected portion of the cap layer 125 , the exposed portion of the cap layer 125 was etched, and the photoresist layer was stripped, thereby leaving a via opening 220 in the cap layer 125 exposing a portion of the underlying conductive line 120 .
- via opening 220 is illustrated, other via openings (not shown) may be provided to contact other M1 conductive lines 120 .
- FIGS. 1Q and 2Q illustrate a top view and a cross-section view (along line 2 Q), respectively, of the device 100 after a plurality of processes were performed to form a conductive via 225 (in the opening 220 —see FIG. 1P ) that connects the M1 layer to the M2 layer, a line-merging conductive structure 230 in the line merge recess 192 , and a conductive line 235 in the M2 layer.
- One or more deposition processes were performed so as to over-fill the recesses formed by removing the sacrificial lines 165 , the line merge recess 192 , and the via opening 220 with a conductive material.
- a planarization process was performed to remove excess conductive material.
- the conductive via 225 , line-merging conductive structure 230 , and conductive lines 235 may include multiple layers, such as one or more barrier layers (e.g., Ta, TaN, TiN, etc.) to prevent migration of any metal into the dielectric layers 115 , 175 , a metal seed layer (e.g., copper), and a metal fill material (e.g., copper).
- Conductive lines having segments 235 A, 235 B are formed where the line cut recess 197 was filled with the dielectric layer 210 .
- the conductive lines 235 , 235 A, 235 B have the characteristic pitch and width of the patterning process and the line-merging conductive structure 230 represents a merged line having an integer number (greater than 1) of characteristic widths.
- the line-merging conductive structure 230 may be used in a high current application, such as for a power rail.
- Subsequent processes may be performed to complete the fabrication of the device 100 , such as forming additional metallization layers, die singulation and packaging.
Abstract
Description
- 1. Field of the Invention
- The present disclosure generally relates to the fabrication of semiconductor devices, and, more particularly, to forming merged lines in a metallization layer.
- 2. Description of the Related Art
- In modern integrated circuits, minimum feature sizes, such as the channel length of field effect transistors, have reached the deep sub-micron range, thereby steadily increasing performance of these circuits in terms of speed and/or power consumption and/or diversity of circuit functions. As the size of the individual circuit elements is significantly reduced, thereby improving, for example, the switching speed of the transistor elements, the available floor space for interconnect lines electrically connecting the individual circuit elements is also decreased. Consequently, the dimensions of these interconnect lines and the spaces between the metal lines have to be reduced to compensate for a reduced amount of available floor space and for an increased number of circuit elements provided per unit area.
- Traditionally, metallization layers, i.e., the wiring layers including metal lines and vias for providing the electrical connection of the circuit elements according to a specified circuit layout, are formed by embedding copper lines and vias in a dielectric layer stack. For highly sophisticated applications, in addition to using copper and/or copper alloys, the well-established and well-known dielectric materials silicon dioxide (k≈4.2) and silicon nitride (k>7) may increasingly be replaced by so-called low-k dielectric materials having a relative permittivity of approximately 3.0 and less. Copper lines and vias are typically formed by performing well-known damascene (single or dual) processes whereby trenches or openings are formed in a layer of insulating material. Thereafter, barrier layers are deposited in the trenches or openings followed by over-filling the trenches or openings with copper material. Next, a planarization process is performed to remove the excess materials above the insulating material, thereby leaving the resulting line or via positioned in the previously formed trench or opening.
- In the case of copper lines, the width of the lines is typically limited by the photolithography processes used to pattern the trenches in the layer of insulating material. In the case where the lines are formed of a material that may be directly patterned, e.g., tungsten, the width of the patterned lines is still limited by photolithography processes. To improve the reliability of the patterning process, a large number of evenly spaced lines are typically formed in a regular pattern. The width of each line and the pitch between lines is determined by the patterning process. In an exemplary self-aligned technique, referred to as self-aligned double patterning (SADP), a hard mask layer is formed above a dielectric layer and a plurality of mandrel line elements is formed above the hard mask layer. Spacers are formed on sidewalls of the mandrel and the mandrel is removed, leaving the spacers as an etch mask for patterning the hard mask layer. The pitch of the spacers is effectively double that of the mandrel elements. Another technique, referred to as self-aligned quadruple patterning (SAQP) forms another set of spacers and removes the first set, effectively quadrupling the pitch of the mandrel elements. The patterned hard mask layer is used to etch trenches in the underlying dielectric layer, and the trenches are filled with metal to form the interconnect lines.
- Due to the regular nature of the spacers and the self-aligned process, it is inherently difficult to pattern trenches with widths greater than the characteristic width of the patterning process, referred to as the 1× width. The patterning of wider lines, such as those needed for high current capacity power rails, typically requires additional masking and patterning steps, giving rise to increased fabrication complexity and cost.
- The present disclosure is directed to various methods of forming merged lines in a metallization layer that may avoid, or at least reduce, the effects of one or more of the problems identified above.
- The following presents a simplified summary of the invention in order to provide a basic understanding of some aspects of the invention. This summary is not an exhaustive overview of the invention. It is not intended to identify key or critical elements of the invention or to delineate the scope of the invention. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later.
- Generally, the present disclosure is directed to various methods of forming merged lines in a metallization layer. A method includes, among other things, forming a plurality of sacrificial lines embedded in a first dielectric layer formed above a substrate. A hard mask layer is formed above the first dielectric layer and the plurality of sacrificial lines. A line merge opening and a line cut opening are formed in the hard mask layer. Portions of the first dielectric layer exposed by the line merge opening are removed to define a line merge recess. A portion of a selected sacrificial line exposed by the line cut opening is removed to define a line cut recess between first and second segments of the selected sacrificial line. A second dielectric layer is formed in the line cut recess. The hard mask is removed. The plurality of sacrificial lines is replaced with a conductive material to define at least one line having third and fourth segments in locations previously occupied by the first and second segments, respectively, of the selected sacrificial line and to define a line-merging conductive structure in the line merge recess.
- Another illustrative method includes, among other things, forming a plurality of sacrificial lines embedded in a first dielectric layer formed above a substrate. A hard mask layer is formed above the first dielectric layer and the plurality of sacrificial lines. First and second openings are formed in the hard mask layer. A spacer layer is formed above the hard mask layer and at least partially in the first and second openings. The spacer layer is removed in the first opening while leaving a remainder portion of the spacer layer disposed in the second opening. Portions of the first dielectric layer exposed by the first opening are removed to define a line merge recess. The remainder portion of the spacer layer disposed in the second opening is removed. A portion of a selected sacrificial line exposed by the second opening is removed to define a line cut recess between first and second segments of the selected sacrificial line. A second dielectric layer is formed in the line cut recess. The plurality of sacrificial lines is replaced with a conductive material to define at least one line having third and fourth segments in locations previously occupied by the first and second segments, respectively, of the selected sacrificial line and to define a line-merging conductive structure in the line merge recess.
- The disclosure may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:
-
FIGS. 1A-1Q are top views of a device depicting various illustrative methods disclosed herein for forming merged lines and cut lines; and -
FIGS. 2A-2Q are cross-sectional views of the device corresponding toFIGS. 1A-1Q . - While the subject matter disclosed herein is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
- Various illustrative embodiments of the invention are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.
- The present subject matter will now be described with reference to the attached figures. Various structures, systems and devices are schematically depicted in the drawings for purposes of explanation only and so as to not obscure the present disclosure with details that are well known to those skilled in the art. Nevertheless, the attached drawings are included to describe and explain illustrative examples of the present disclosure. The words and phrases used herein should be understood and interpreted to have a meaning consistent with the understanding of those words and phrases by those skilled in the relevant art. No special definition of a term or phrase, i.e., a definition that is different from the ordinary and customary meaning as understood by those skilled in the art, is intended to be implied by consistent usage of the term or phrase herein. To the extent that a term or phrase is intended to have a special meaning, i.e., a meaning other than that understood by skilled artisans, such a special definition will be expressly set forth in the specification in a definitional manner that directly and unequivocally provides the special definition for the term or phrase.
- The present disclosure generally relates to various methods of forming merged lines in a metallization layer. As will be readily apparent to those skilled in the art upon a complete reading of the present application, the present method is applicable to a variety of devices, including, but not limited to, logic devices, memory devices, etc. With reference to the attached figures, various illustrative embodiments of the methods and devices disclosed herein will now be described in more detail.
-
FIGS. 1A-1Q and 2A-2Q illustrate a method for forming merged lines and cut lines in adevice 100 using a combined etch mask.FIG. 1A shows a top view of thedevice 100 andFIG. 2A shows a corresponding cross-sectional view of thedevice 100 taken alongline 2A inFIG. 1A . Thedevice 100 includes asubstrate 105. Adevice layer 110 is disposed above thesubstrate 105. Semiconductor-based circuit elements, such as transistors, resistors, capacitors, etc., may be formed in and above thesubstrate 105. Thedevice layer 110 also typically includes conductive contacts that interface with these circuit elements. For convenience, any such circuit elements and contacts are not shown inFIG. 2A . Thesubstrate 105 may also include any appropriate microstructure features, such as micromechanical components, optoelectronic components and the like, wherein at least some of these components may require an interconnect structure formed in a metallization system. - A
dielectric layer 115 is formed above the device layer 110 (e.g., in a Metal 1 (M1) layer). Thedielectric layer 115 may be a low-k dielectric material having a dielectric constant of approximately 3.0 or lower or an ultra-low-k (ULK) material having a dielectric constant of approximately 2.5 or lower. In some embodiments, thedielectric layer 115 may be SiOC. Conductive lines 120 (e.g., copper) with a cap layer 125 (e.g., silicon nitride) are formed in thedielectric layer 115. Theconductive lines 120 may include multiple layers, such as one or more barrier layers (e.g., Ta, TaN, TiN, etc.) to prevent migration of any metal in theconductive lines 120 into thedielectric layer 115, a metal seed layer (e.g., copper), and a metal fill material (e.g., copper). -
FIGS. 1B and 2B illustrate a top view and a cross-section view (alongline 2B), respectively, of thedevice 100 after a plurality of processes were performed so as to form a set ofsacrificial lines 165, each having a cap layer 170 (e.g., silicon nitride) formed thereabove. Thesacrificial lines 165 are oriented perpendicularly with respect to theconductive lines 120 illustrated inFIG. 1A . Thesacrificial lines 165 may be formed by patterning a layer of sacrificial material (e.g., amorphous silicon) using thecap layer 170 as a hard mask for a patterning process (e.g., self-aligned double patterning (SADP), self-aligned quad patterning (SAQD), or directed self-assembly material patterning), the specifics of which are known to those of ordinary skill in the art. -
FIGS. 1C and 2C illustrate a top view and a cross-section view (along line 2C), respectively, of thedevice 100 after a plurality of processes were performed so as to deposit a second dielectric layer 175 (e.g., in a Metal 2 (M2) layer) above thesacrificial lines 165, and to planarize thesecond dielectric layer 175 using thecap layer 170 as a stop layer. In some embodiments, the material of thesecond dielectric layer 175 may be the same as that of the first dielectric layer 115 (e.g., SiOC). -
FIGS. 1D and 2D illustrate a top view and a cross-section view (alongline 2D), respectively, of thedevice 100 after an etch process (e.g., selective dry or wet etch) was performed to remove thecap layer 170. -
FIGS. 1E and 2E illustrate a top view and a cross-section view (alongline 2E), respectively, of thedevice 100 after a plurality of processes were performed so as to deposit a first hard mask layer 180 (e.g., silicon dioxide) and a second hard mask layer 185 (e.g., silicon nitride) above thesecond dielectric layer 175 and a patterning process was performed (e.g., using a patterned photoresist layer) to define aline merge opening 190 and aline cut opening 195 in the hard mask layers 180, 185. For ease of illustration, the hard mask layers 180, 185 are illustrated as having planar top surfaces with thecap layer 180 extending into the recesses created by removal of thecap layer 170. However, in an actual implementation, the cap layers 180, 185 would be conformal. -
FIGS. 1F and 2F illustrate a top view and a cross-section view (alongline 2F), respectively, of thedevice 100 after a deposition process was performed to deposit a spacer layer 200 (e.g., silicon nitride) above thecap layer 185 and in theopenings opening 195, it may be almost entirely filled by thespacer layer 200. -
FIGS. 1G and 2G illustrate a top view and a cross-section view (alongline 2G), respectively, of thedevice 100 after an etch process was performed to etch thespacer layer 200 and a portion of thecap layer 185 to clear theopening 190 and expose thesacrificial lines 165, while leaving theopening 195 at least partially filled by a remainder portion of thespacer layer 200. Theopening 195 remains at least partially plugged due to its higher aspect ratio. Theopenings spacer layer 200 remains in position in theopening 195 after the spacer material is removed from theopening 190. For example, the thickness of thespacer layer 200 may be about half the width, W, of theopening 195, as illustrated inFIG. 1F . -
FIGS. 1H and 2H illustrate a top view and a cross-section view (alongline 2H), respectively, of thedevice 100 after an anisotropic etch process was performed to remove the portions of thedielectric layer 175 exposed by theopening 190 and thereby define anopening 175A in thedielectric layer 175. This process operation exposes theunderlying cap layer 125. Thespacer material 200 in theopening 195 protects the underlying materials and structures during this etching process. -
FIGS. 1I and 2I illustrate a top view and a cross-section view (along line 2I), respectively, of thedevice 100 after an anisotropic etch process was performed to remove the portions of thesacrificial lines 165 exposed by theopening 190. The etch process to remove the exposed portions of thesacrificial lines 165 is referred to as a “line merge etch” as it creates aline merge recess 192 in thedielectric layer 175 having a width, WLM, that is greater than the combined widths of the sacrificial lines 165 (e.g., 3 in the depicted example) that are removed whenline merge recess 192 is formed and the exposed portions of thesacrificial lines 165 are cut or removed. Theline merge recess 192 will be subsequently filled with conductive material to define a line-merging conductive structure an integer number of line widths. In some embodiments, theopening 175A in thedielectric layer 175 may be formed as inFIGS. 1H and 2H , but the exposedsacrificial lines 165 may not be removed immediately after that process operation. Instead, thesacrificial lines 165 may be removed at a later stage, as discussed more fully below. -
FIGS. 1J and 2J illustrate a top view and a cross-section view (alongline 2J), respectively, of thedevice 100 after a deposition process was performed to deposit a dielectric layer 205 (e.g., silicon dioxide) above the secondhard mask layer 185 and in theline merge recess 192 and a planarization process was performed to remove portions of thedielectric layer 205 extending above the secondhard mask layer 185 and to remove the secondhard mask layer 185, thereby exposing the firsthard mask layer 180. After the planarization, theopening 190 and theline merge recess 192 are filled by thedielectric layer 205 and theopening 195 is filled by the remainder portion of thespacer layer 200. -
FIGS. 1K and 2K illustrate a top view and a cross-section view (alongline 2K), respectively, of thedevice 100 after a first etch process was performed to remove the remainder portion of thespacer layer 200 to reestablish theopening 195 and a second etch process was performed to remove the portion of thesacrificial line 165 exposed by theopening 195 to define aline cut recess 197 in thedielectric layer 175 that exposes theunderlying layer 125. The etch process for removing the exposed portion of thesacrificial line 165 is referred to as a “line cut etch” process as it separates the etched sacrificial lines 165 (shown in phantom) intosegments spacer layer 200 may be integrated with the line cut etch process. Although theline cut recess 197 only spans a single line in the illustrated example, it may be sized to cover more than one line. -
FIGS. 1L and 2L illustrate a top view and a cross-section view (alongline 2L), respectively, of thedevice 100 after a deposition process was performed to form a dielectric layer 210 (e.g., SiOC) in theopening 195 and to fill in theline cut recess 197. -
FIGS. 1M and 2M illustrate a top view and a cross-section view (alongline 2M), respectively, of thedevice 100 after a timed etch process was performed to recess thedielectric layer 210 to expose the top surface of thehard mask layer 180 and thedielectric layer 205. -
FIGS. 1N and 2N illustrate a top view and a cross-section view (alongline 2N), respectively, of thedevice 100 after one or more wet etching processes were performed to remove thedielectric layer 205 and thehard mask layer 180. In an embodiment where thedielectric layers line merge recess 192 is sized such that it exposes the cap layers 125 that correspond to three illustrativeconductive lines 120 in the M1 metallization layer. Of course, theline merge recess 192 may be sized such that the cap layers 125 of any desired number ofconductive lines 120 may be exposed by theline merge recess 192. -
FIGS. 1O and 2O illustrate a top view and a cross-section view (along line 2O), respectively, of thedevice 100 after an etch process was performed to remove thesacrificial lines 165 thereby exposing the cap layers 125 of the underlyingconductive lines 120 in the M1 layer. In some embodiments, if thesacrificial lines 165 in the line merge recess are not removed as described in reference toFIGS. 1I and 2I above, they may be removed here. -
FIGS. 1P and 2P illustrate a top view and a cross-section view (alongline 2P), respectively, of thedevice 100 after a plurality of processes were performed to establish a M1 to M2 interconnections. A photoresist layer (not shown) was formed and patterned to expose a selected portion of thecap layer 125, the exposed portion of thecap layer 125 was etched, and the photoresist layer was stripped, thereby leaving a viaopening 220 in thecap layer 125 exposing a portion of the underlyingconductive line 120. Although only one example viaopening 220 is illustrated, other via openings (not shown) may be provided to contact other M1conductive lines 120. -
FIGS. 1Q and 2Q illustrate a top view and a cross-section view (alongline 2Q), respectively, of thedevice 100 after a plurality of processes were performed to form a conductive via 225 (in theopening 220—seeFIG. 1P ) that connects the M1 layer to the M2 layer, a line-mergingconductive structure 230 in theline merge recess 192, and aconductive line 235 in the M2 layer. One or more deposition processes were performed so as to over-fill the recesses formed by removing thesacrificial lines 165, theline merge recess 192, and the viaopening 220 with a conductive material. Then, a planarization process was performed to remove excess conductive material. The conductive via 225, line-mergingconductive structure 230, andconductive lines 235 may include multiple layers, such as one or more barrier layers (e.g., Ta, TaN, TiN, etc.) to prevent migration of any metal into thedielectric layers lines having segments line cut recess 197 was filled with thedielectric layer 210. Theconductive lines conductive structure 230 represents a merged line having an integer number (greater than 1) of characteristic widths. The line-mergingconductive structure 230 may be used in a high current application, such as for a power rail. - Subsequent processes may be performed to complete the fabrication of the
device 100, such as forming additional metallization layers, die singulation and packaging. The use of the illustrated process to employ a common hard mask for line merges and line cuts simplifies the patterning process by reducing the number of masks and photolithography masks and steps. - The particular embodiments disclosed above are illustrative only, as the invention may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein. For example, the process steps set forth above may be performed in a different order. Furthermore, no limitations are intended to the details of construction or design herein shown, other than as described in the claims below. It is therefore evident that the particular embodiments disclosed above may be altered or modified and all such variations are considered within the scope and spirit of the invention. Note that the use of terms, such as “first,” “second,” “third” or “fourth” to describe various processes or structures in this specification and in the attached claims is only used as a shorthand reference to such steps/structures and does not necessarily imply that such steps/structures are performed/formed in that ordered sequence. Of course, depending upon the exact claim language, an ordered sequence of such processes may or may not be required. Accordingly, the protection sought herein is as set forth in the claims below.
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/608,377 US9412655B1 (en) | 2015-01-29 | 2015-01-29 | Forming merged lines in a metallization layer by replacing sacrificial lines with conductive lines |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/608,377 US9412655B1 (en) | 2015-01-29 | 2015-01-29 | Forming merged lines in a metallization layer by replacing sacrificial lines with conductive lines |
Publications (2)
Publication Number | Publication Date |
---|---|
US20160225666A1 true US20160225666A1 (en) | 2016-08-04 |
US9412655B1 US9412655B1 (en) | 2016-08-09 |
Family
ID=56554720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/608,377 Expired - Fee Related US9412655B1 (en) | 2015-01-29 | 2015-01-29 | Forming merged lines in a metallization layer by replacing sacrificial lines with conductive lines |
Country Status (1)
Country | Link |
---|---|
US (1) | US9412655B1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10157776B2 (en) * | 2017-03-15 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20190035638A1 (en) * | 2017-07-31 | 2019-01-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple patterning method |
WO2019132889A1 (en) | 2017-12-27 | 2019-07-04 | Intel Corporation | Integrated circuits with line breaks and line bridges within a single interconnect level |
US11502031B2 (en) | 2017-12-27 | 2022-11-15 | Intel Corporation | Multiple layer metal-insulator-metal (MIM) structure |
US11557536B2 (en) | 2017-12-27 | 2023-01-17 | Intel Corporation | Integrated circuits (IC's) with electro-migration (EM)—resistant segments in an interconnect level |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10340180B1 (en) | 2018-01-16 | 2019-07-02 | Globalfoundries Inc. | Merge mandrel features |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7387939B2 (en) * | 2004-07-19 | 2008-06-17 | Micron Technology, Inc. | Methods of forming semiconductor structures and capacitor devices |
US7902066B2 (en) * | 2006-09-26 | 2011-03-08 | Chartered Semiconductor Manufacturing, Ltd. | Damascene contact structure for integrated circuits |
US9269747B2 (en) * | 2012-08-23 | 2016-02-23 | Micron Technology, Inc. | Self-aligned interconnection for integrated circuits |
US9287131B2 (en) * | 2014-02-21 | 2016-03-15 | Globalfoundries Inc. | Methods of patterning line-type features using a multiple patterning process that enables the use of tighter contact enclosure spacing rules |
US10163652B2 (en) * | 2014-03-13 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming patterns using multiple lithography processes |
-
2015
- 2015-01-29 US US14/608,377 patent/US9412655B1/en not_active Expired - Fee Related
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10157776B2 (en) * | 2017-03-15 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11355388B2 (en) | 2017-03-15 | 2022-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10804142B2 (en) | 2017-03-15 | 2020-10-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10535532B2 (en) | 2017-07-31 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple patterning method using mask portions to etch semiconductor substrate |
US10347506B2 (en) * | 2017-07-31 | 2019-07-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple patterning method using mask portions to etch semiconductor substrate |
CN109326521A (en) * | 2017-07-31 | 2019-02-12 | 台湾积体电路制造股份有限公司 | Multiple patterning method |
KR102102735B1 (en) | 2017-07-31 | 2020-04-22 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Multiple patterning method |
KR20190013438A (en) * | 2017-07-31 | 2019-02-11 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Multiple patterning method |
US20190035638A1 (en) * | 2017-07-31 | 2019-01-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple patterning method |
WO2019132889A1 (en) | 2017-12-27 | 2019-07-04 | Intel Corporation | Integrated circuits with line breaks and line bridges within a single interconnect level |
EP3732704A4 (en) * | 2017-12-27 | 2021-07-28 | INTEL Corporation | Integrated circuits with line breaks and line bridges within a single interconnect level |
US11205586B2 (en) | 2017-12-27 | 2021-12-21 | Intel Corporation | Integrated circuits with line breaks and line bridges within a single interconnect level |
US11502031B2 (en) | 2017-12-27 | 2022-11-15 | Intel Corporation | Multiple layer metal-insulator-metal (MIM) structure |
US11557536B2 (en) | 2017-12-27 | 2023-01-17 | Intel Corporation | Integrated circuits (IC's) with electro-migration (EM)—resistant segments in an interconnect level |
US11830768B2 (en) | 2017-12-27 | 2023-11-28 | Intel Corporation | Integrated circuits with line breaks and line bridges within a single interconnect level |
Also Published As
Publication number | Publication date |
---|---|
US9412655B1 (en) | 2016-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9412655B1 (en) | Forming merged lines in a metallization layer by replacing sacrificial lines with conductive lines | |
US10861742B2 (en) | Interconnect structure having an etch stop layer over conductive lines | |
CN107665855B (en) | Method for manufacturing semiconductor device | |
US9263325B1 (en) | Precut metal lines | |
CN109659274B (en) | Method of forming conductive contact structures to semiconductor devices and resulting structures | |
US10636698B2 (en) | Skip via structures | |
US20170004999A1 (en) | Self-aligned via process flow | |
JP2007035955A (en) | Semiconductor device and its manufacturing method | |
CN108417530B (en) | Method for forming conductive paths and vias | |
US9141749B2 (en) | Interconnect structures and methods for back end of the line integration | |
US8383510B2 (en) | Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materials | |
CN108511338B (en) | Method for defining pattern for conductive path in dielectric layer | |
CN108511387B (en) | Method of forming conductive path pattern in dielectric layer | |
TW201732930A (en) | Method of forming semiconductor | |
US20130270704A1 (en) | Semiconductor Device with Self-Aligned Interconnects | |
US20090294921A1 (en) | Semiconductor device comprising metal lines with a selectively formed dielectric cap layer | |
KR100739975B1 (en) | Method of manufacturing a semiconductor device | |
US11114338B2 (en) | Fully aligned via in ground rule region | |
US20140353837A1 (en) | Semiconductor device and manufacturing method thereof | |
KR102316258B1 (en) | Back end of line via to metal line margin improvement | |
US10395978B2 (en) | Method of patterning target layer | |
WO2023093676A1 (en) | Beol top via wirings with dual damascene via and super via redundancy | |
KR100628222B1 (en) | Method for Fabricating Cu Damascene | |
KR20210092307A (en) | How to reverse via pattern the rear end of a line dual damascene structure | |
CN116190308A (en) | Interconnect structure for semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: GLOBALFOUNDRIES INC., CAYMAN ISLANDS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BOUCHE, GUILLAUME;STEPHENS, JASON E.;CHAUHAN, VIKRANT;AND OTHERS;SIGNING DATES FROM 20141205 TO 20141222;REEL/FRAME:034841/0004 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: ALSEPHINA INNOVATIONS INC., CANADA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:GLOBALFOUNDRIES INC.;REEL/FRAME:049669/0749 Effective date: 20181126 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20200809 |
|
AS | Assignment |
Owner name: GLOBALFOUNDRIES INC., CAYMAN ISLANDS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:WILMINGTON TRUST, NATIONAL ASSOCIATION;REEL/FRAME:054636/0001 Effective date: 20201117 |