US20160102013A1 - Low-E Panels and Methods for Forming the Same - Google Patents
Low-E Panels and Methods for Forming the Same Download PDFInfo
- Publication number
- US20160102013A1 US20160102013A1 US14/512,644 US201414512644A US2016102013A1 US 20160102013 A1 US20160102013 A1 US 20160102013A1 US 201414512644 A US201414512644 A US 201414512644A US 2016102013 A1 US2016102013 A1 US 2016102013A1
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- layer
- low
- refractive index
- dielectric layer
- forming
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Links
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Images
Classifications
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- C03—GLASS; MINERAL OR SLAG WOOL
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- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3639—Multilayers containing at least two functional metal layers
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
- C03C17/366—Low-emissivity or solar control coatings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
- G02B5/282—Interference filters designed for the infrared light reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Surface Treatment Of Glass (AREA)
- Laminated Bodies (AREA)
Abstract
Description
- The present invention relates to low-e panels. More particularly, this invention relates to low-e panels with novel materials and methods for forming such low-e panels.
- Low emissivity, or low-e, panels are often formed by depositing a reflective layer (e.g., silver), along with various other layers, onto a transparent (e.g., glass) substrate. The other layers typically include various dielectric and metal oxide layers, such as silicon nitride, tin oxide, and zinc oxide, to provide a barrier between the stack and both the substrate and the environment, as well as to act as optical fillers and improve the optical characteristics of the panel.
- When used in, for example, windows, and depending on the particular environment (i.e., climate), it may be desirable for the low-e panels to allow visible light to pass through the window while blocking other types of solar radiation, such as infra-red. Such panels are often referred to as having a high light-to-solar gain (LSG) ratio.
- Currently available low-e panels are able to achieve LSG ratios of 1.8, or even higher, by using coating with more than one reflective layer (i.e., “double silver” coatings, “triple silver” coatings, etc.) However, these coatings typically exhibit changes in, for example, optical performance (e.g., color) if they are exposed to a heat treatment, such as that often performed to temper the glass substrate. As a result, different coatings must be used depending on whether or not a heat treatment will subsequently be performed.
- Some existing low-e panels, suitable for certain applications, exhibit little or no change in performance due to the heat treatment. However, these low-e panels typically only utilize a single reflective layer, and thus have relatively low LSG ratios (e.g., less than 1.5).
- To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The drawings are not to scale and the relative dimensions of various elements in the drawings are depicted schematically and not necessarily to scale.
- The techniques of the present invention can readily be understood by considering the following detailed description in conjunction with the accompanying drawings, in which:
-
FIG. 1 is a cross-sectional side view of a low-e panel according to some embodiments. -
FIG. 2 is a cross-sectional side view of a low-e panel according to some embodiments. -
FIG. 3 is a graph depicting transmittance and reflectance for low-e panels according to some embodiments. -
FIG. 4 is a table of data related to various performance characteristics for low-e panels according to some embodiments. -
FIG. 5 is a simplified cross-sectional diagram illustrating a physical vapor deposition (PVD) tool according to some embodiments. -
FIG. 6 is a flow chart illustrating a method for forming a low-e panel according to some embodiments. - A detailed description of one or more embodiments is provided below along with accompanying figures. The detailed description is provided in connection with such embodiments, but is not limited to any particular example. The scope is limited only by the claims, and numerous alternatives, modifications, and equivalents are encompassed. Numerous specific details are set forth in the following description in order to provide a thorough understanding. These details are provided for the purpose of example and the described techniques may be practiced according to the claims without some or all of these specific details. For the purpose of clarity, technical material that is known in the technical fields related to the embodiments has not been described in detail to avoid unnecessarily obscuring the description.
- The term “horizontal” as used herein will be understood to be defined as a plane parallel to the plane or surface of the substrate, regardless of the orientation of the substrate. The term “vertical” will refer to a direction perpendicular to the horizontal as previously defined. Terms such as “above”, “below”, “bottom”, “top”, “side” (e.g. sidewall), “higher”, “lower”, “upper”, “over”, and “under”, are defined with respect to the horizontal plane. The term “on” means there is direct contact between the elements. The term “above” will allow for intervening elements.
- Some embodiments provide low-e optical coatings (and/or panels) capable of achieving high light-to-solar gain (LSG) ratios (e.g., greater than 1.9), which do not experience significant changes in performance (e.g., color, visible transmission, solar heat gain coefficient (SHGC), etc.) from undergoing a heat treatment, such as a tempering process. Such coatings may, for example, be used in windows/low-e panels in warm climates in which it is desirable to allow visible light to pass through, while preventing heat from entering the interior of the building. In some embodiments, the low-e stack includes a base layer and a dielectric layer between the transparent substrate and the reflective layer (e.g., silver). The refractive index of the base layer is different than that of the dielectric layer (e.g., the refractive index of the dielectric layer is higher). The dielectric layer may include niobium. In some embodiments, the dielectric layer is made of niobium oxide.
-
FIG. 1 illustrates a low-e panel 100 according to some embodiments. The low-e panel 100 includes atransparent substrate 102 and a low-e stack 104 formed above thetransparent substrate 102. Thetransparent substrate 102 in some embodiments is made of a low emissivity glass, such as borosilicate glass. However, in some embodiments, thetransparent substrate 102 may be made of plastic or a transparent polymer, such as polyethylene terephthalate (PET), poly(methyl methacrylate) (PMMA), polycarbonate (PC), and polyimide (PI). Thetransparent substrate 102 has a thickness of, for example, between about 1 and about 10 millimeters (mm). In a testing environment, thetransparent substrate 102 may be round with a diameter of, for example, about 200 or about 300 mm. However, in a manufacturing environment, thetransparent substrate 102 may be square or rectangular and significantly larger (e.g., about 0.5-about 6 meters (m) across). - The low-
e stack 104 includes abase layer 106, adielectric layer 108, aseed layer 110, areflective layer 112, abarrier layer 114, a first over-coatinglayer 116, a second over-coatinglayer 118, and aprotective layer 120. Exemplary details as to the functionality provided by each of the layers 106-120 are provided below. - The various layers in the low-
e stack 104 may be formed sequentially (i.e., from bottom to top) above thetransparent substrate 102 using, for example, a physical vapor deposition (PVD) and/or reactive sputtering processing tool. In some embodiments, the low-e stack 104 is formed above theentire substrate 102. However, in some embodiments, the low-e stack 104 may only be formed above isolated portions of thetransparent substrate 102. Although the layers may be described as being formed “above” the previous layer (or the substrate), it should be understood that in some embodiments, each layer is formed directly on (and adjacent to) the previously provided/formed component (e.g., layer). In some embodiments, additional layers may be included between the layers, and other processing steps may also be performed between the formations of various layers. - The
base layer 106 is formed above thetransparent substrate 102. Thebase layer 106 may be made of a metal oxide and have a thickness of, for example, between about 100 Å and about 180 Å, such as about 150 Å. In some embodiments, thebase layer 106 has a refractive index of between about 1.7 and about 2.2, such as about 2.0, and may include zinc, tin, or a combination thereof. Thebase layer 106 may be made of zinc-tin oxide. Other suitable materials are, for example, titanium oxide, zinc oxide, tin oxide, and other metal alloy oxides, such as aluminum-tin oxide. Thebase layer 106 may be used to tune the optical properties (e.g., color, transmittance, etc.) of the low-e panel 100 as a whole, as well as to enhance silver nucleation. - The
dielectric layer 108 is formed above thebase layer 106. In some embodiments, thedielectric layer 108 has a refractive index that is greater than the refractive index of thebase layer 106. For example, the refractive index of thedielectric layer 108 may be between about 2.3 and about 2.5, such as about 2.4. Thedielectric layer 108 may include niobium. In some embodiments, thedielectric layer 108 is made of niobium oxide. Thedielectric layer 108 may have a thickness of, for example, between about 100 Å and about 180 Å, such as about 150 Å. Thedielectric layer 108 may be used to provide a separation between thebase layer 106 and theseed layer 110. - The
seed layer 110 is formed above thedielectric layer 108. Theseed layer 110 is made of a metal oxide and may have a thickness of, for example, between about 30 Å and about 120 Å, such as about 40 Å. In some embodiments, the metal oxide used in theseed layer 110 is zinc oxide. Theseed layer 110 may be used to enhance the deposition/growth of thereflective layer 112 in the low-e stack 104 (e.g., enhance the crystalline structure and/or texturing of the reflective layer 112) and increase the transmission of thestack 104 for anti-reflection purposes. In some embodiments, theseed layer 110 may be made of tin oxide or may not be included at all. - The
reflective layer 112 is formed above theseed layer 110. In some embodiments, thereflective layer 112 is made of silver and has a thickness of, for example, between about 80 Å and about 150 Å, such as about 100 Å. As is commonly understood, thereflective layer 112 is used to reflect infra-red electro-magnetic radiation, thus reducing the amount of heat that may be transferred through the low-e panel 100. - The
barrier layer 114 is formed over thereflective layer 112. Thebarrier layer 114 may include, for example, nickel, titanium, niobium, or a combination thereof. For example, in some embodiments, the barrier layer is made of nickel-titanium-niobium oxide. Thebarrier layer 114 may have a thickness of, for example, between about 10 Å and about 100 Å, such as about 30 Å. Thebarrier layer 114 is used, for example, to protect thereflective layer 112 from the processing steps used to form the other, subsequent layers of the low-e stack 104 and to prevent any interaction of the material of thereflective layer 112 with the materials of the other layers of the low-e stack 104, which may result in undesirable optical characteristics, such as poor color performance, of the low-e panel 100. - Still referring to
FIG. 1 , the firstover-coating layer 116 is formed above thebarrier layer 114. The firstover-coating layer 116 may be made of a metal oxide and have a thickness of, for example, between about 150 Å and about 400 Å, such as about 300 Å. In some embodiments, the firstover-coating layer 116 is made of the same material as the base layer 108 (e.g., zinc-tin oxide). - The second
over-coating layer 118 is formed above the firstover-coating layer 116. The secondover-coating layer 118 may be made of a metal oxide and have a thickness of, for example, between about 10 Å and about 100 Å, such as about 30 Å. In some embodiments, the firstover-coating layer 116 is made of the same material as the seed layer 108 (e.g., zinc oxide). - The first and second
over-coating layers e panel 100 as a whole. Additionally, in some embodiments, the first and secondover-coating layers e panel 100. - Still referring to
FIG. 1 , the protective (or capping)layer 120 is formed above the secondover-coating layer 118. Theprotective layer 120 may be made of silicon nitride and have a thickness of, for example, between about 200 Å and about 300 Å, such as about 250 Angstroms (Å). Theprotective layer 120 may be used to provide additional protection for the lower layers of thestack 104 and further adjust the optical properties of the low-e panel 100. Theprotective layer 120 may also be considered to be an over-coating layer (i.e., a third over-coating layer). - Additionally, although not shown in
FIG. 1 , it should be understood that an additional protective layer may be formed between thetransparent substrate 102 and thebase layer 106. This additional (or lower) protective layer may be made of the same material (e.g., silicon nitride) as the (upper)protective layer 120 and have a thickness of, for example, between about 100 Å and 250 Å. This additional protective layer may protect the other layers in thestack 104 from any elements which may otherwise diffuse from thetransparent substrate 102 and may be used to further tune the optical properties (e.g., transmission) of the low-e stack 104 and/or the low-e panel 100 as a whole. - One skilled in the art will appreciate that the embodiment depicted in
FIG. 1 is a “single silver” low-e panel (i.e., having one reflective/silver layer). However, in some embodiments, the low-e panel 100 (or the low-e stack 104) is formed as a “double silver,” or even a “triple silver,” low-e panel (i.e., having two or three reflective/silver layers). In such embodiments, other layers in the low-e stack 104 may be replicated more than once along with the reflective layer. For example, in a double silver low-e panel, a set of additional layers, including an additional dielectric layer, seed layer, reflective layer, barrier layer, and first over-coating layer, similar to those described above, may be sequentially formed between the firstover-coating layer 116 and the secondover-coating layer 118. - An example of a “double silver” low-
e panel 200 is shown inFIG. 2 . The low-e panel 200 includes atransparent substrate 202 and a low-e stack 204 formed above thetransparent substrate 202. Thetransparent substrate 202 may be similar to that described above. The low-e stack 204 includes a first (or lower)base layer 206, a firstdielectric layer 208, afirst seed layer 210, a firstreflective layer 212, afirst barrier layer 214, a second (or upper)base layer 216, asecond dielectric layer 218, asecond seed layer 220, a second reflective layer 222, asecond barrier layer 224, a firstover-coating layer 226, a secondover-coating layer 228, and aprotective layer 230. Each of the layers of the double silver low-e panel 200 may have the same properties (e.g., material, thickness, etc.) as the similarly named layers of the low-e panel 100 shown inFIG. 1 and described above. - It should be noted that depending on the materials used, some of the layers of the low-e stack (e.g., low-
e stack 104 and low-e stack 204) may have some materials in common. For example, in the embodiments described above, thebase layer 106 and the firstover-coating layer 116 may be made of the same material (e.g., zinc-tin oxide). Similarly, theseed layer 108 and the secondover-coating layer 118 may be made of the same material (e.g., zinc oxide). As a result, embodiments described herein may allow for a relatively low number of different targets to be used for the formation of the low-e stack 104. - It should also be understood that the low-e panel (e.g., low-
e panel 100 and low-panel 200) may be a portion of (or installed in) a larger, more complex device or system, such as a low-e window. Such a window may include multiple glass substrates (or panes), other coatings (or layers), such a thermochromic coating formed on a different pane than the low-e stack, and various barrier or spacer layers formed between adjacent panes. - Low-e panels formed in accordance with embodiments described herein showed very little change in visible transmission (or transmittance) and reflection (or reflectance) due to the heat treatment (e.g., 73.3% as-coated and 73.9% after heat treatment).
FIG. 3 graphically illustrates the transmittance and reflectance, both before and after heat treatment, for low-e panels in accordance with some embodiments. In particular,line group 302 depicts transmittance, with the solid line inline group 302 depicting the transmittance before heat treatment (i.e., as-coated) and the dashed line inline group 302 depicting the transmittance after heat treatment. As shown, the transmittance for visible light (i.e., 380-780 nm) is relative high, peaking at about 80%, both before and after heat treatment (i.e., the heat treatment changed transmittance very little). - Still referring to
FIG. 3 ,line group 304 depicts reflectance for electro-magnetic radiation passing through the low-e panels from the side of the substrate with the low-e stack (i.e., the coating side). The solid line inline group 304 depicts this reflectance before heat treatment, and the dashed line depicts this reflectance after heat treatment. As shown, the reflectance for the coating side increases dramatically (to over 90%) for electro-magnetic radiation with wavelengths longer than that of visible light (i.e., greater than 780 nm) and is affected very little by the heat treatment.Line group 306 depicts reflectance for electro-magnetic radiation passing through the low-e panels from the side of the substrate opposite the low-e stack (i.e., the substrate (or glass) side). The solid line inline group 306 depicts this reflectance before heat treatment, and the dashed line depicts this reflectance after heat treatment. As shown, the reflectance for the substrate side, though not quite as high as the coating side, increases dramatically for electro-magnetic radiation with wavelengths longer than that of visible light and is affected very little by the heat treatment. - Other characteristics of the low-e panels described herein are shown in the table depicted in
FIG. 4 . “AC” indicates data for the as-coated low-e panels, and “HT” indicates data for the low-e panels after a high temperature treatment (e.g. tempering). Data are presented for both monolithic low-e panels (e.g., Monolithic Optics) and dual-pane low-e panels (e.g., IGU Optics). Due to the distribution of cones in the eye, the color observance may depend on the observer's field of view. Standard (colorimetric) observer is used, which was taken to be the chromatic response of the average human viewing through a 2 degree angle, due to the belief that the color-sensitive cones reside within a 2 degree arc of the field of view. Thus, the measurements are shown for the 2 degree Standard Observer. - The various characteristics listed in
FIG. 4 will be understood and appreciated by one skilled in the art. For example, intensity of reflected visible wavelength light, (e.g., “reflectance”) is defined for glass side “g” or for film side “f”. Intensity from glass side reflectance, (e.g., RgY), shows light intensity measured from the side of the glass substrate opposite the side of the coated layers. Intensity from film side reflectance, (e.g., RfY), shows light intensity measured from the side of the glass substrate on which the coated layers are formed. Transmittance, (e.g., TY), shows light intensity measured for the transmitted light. - The color characteristics are measured and reported herein using the CIE LAB a*, b* coordinates and scale (i.e. the CIE a*b* diagram, Ill. CIE-C, 2 degree observer). In the CIE LAB color system, the “L*” value indicates the lightness of the color, the “a*” value indicates the position between magenta and green (more negative values indicate stronger green and more positive values indicate stronger magenta), and the “b*” value indicates the position between yellow and blue (more negative values indicate stronger blue and more positive values indicate stronger yellow).
- Emissivity (E) is a characteristic of both absorption and reflectance of light at given wavelengths. It can usually represented as a complement of the reflectance by the film side, (e.g., E=1−Rf). For architectural purposes, emissivity values can be important in the far range of the infrared spectrum, (e.g., about 2,500-40,000 nm). Thus, the emissivity value reported here includes normal emissivity (EN), as measured in the far range of the infrared spectrum. Haze is a percentage of light that deviates from the incident beam greater than 2.5 degrees on the average.
- Data are also shown for the difference between heat treated and as-coated low-e panels. The value ΔE* (and Δa*, Δb*, ΔY) are important in determining whether or not upon heat treatment (HT) there is matchability, or substantial matchability, of the coated panels. For purposes of example, the term Δa*, for example, is indicative of how much color value a* changes due to heat treatment. Also, ΔE* is indicative of the change in reflectance and/or transmittance (including color appearance) in a coated panel after a heat treatment. ΔE* corresponds to the CIELAB Scale L*, a*, b*, and measures color properties before heat treatment (L*0, a*0, b*0) and color properties after heat treatment (L*1, a*1, b*1):
-
ΔE*=√{square root over ((ΔL*)2+(Δa*)2+(Δb*)2)}{square root over ((ΔL*)2+(Δa*)2+(Δb*)2)}{square root over ((ΔL*)2+(Δa*)2+(Δb*)2)} - where ΔL*=L*1−L*0, Δa*=a*1−a*0, and Δb*=b*1−b*0.
- The color change of glass side reflection can be calculated as RgΔE*. The color change of light transmission can be calculated as TΔE*, T|Δa*| and T|Δb*|. The luminance change of light transmission can be calculated as TΔY.
- Low-e panels (and/or low-e windows) utilizing the low-e stacks described above, particularly in a double (or triple) silver configuration, may demonstrate a high LSG ratio (e.g., greater than 1.9). Additionally, these low-e panels may show very little or no change in performance after undergoing a heat treatment. For example, in some embodiments utilizing a double silver low-e stack, the low-e panels exhibited very low emissivity (i.e, normal emissivity (EN) both before (i.e., as-coated) and after heat treatment (e.g., 0.024 as-coated and 0.016 after heat treatment). The solar heat gain coefficient (SHGC) of the low-e panels was also affected very little by the heat treatment (e.g., 37.1 as-coated and 38.4 after heat treatment). Further, the low-e panels described herein exhibit a low Rg ΔE* value (i.e. the color change on the glass side) when comparing the as-coated and the heat treated data (i.e., “HT−AC”). As shown, the low-e panels described herein exhibit RgΔE* values of 2.32.
- As an additional benefit, any additional manufacturing costs may be minimized because many of the layers in the low-e stacks described herein utilize materials used in the other layers (e.g., niobium, zinc, tin, etc). As a result, the total number of targets that are required to form the low-e stacks may be minimized, which reduces manufacturing costs.
-
FIG. 5 provides a simplified illustration of a physical vapor deposition (PVD) tool (and/or system) 500 which may be used to form the low-e panels and/or the low-e stacks described above, in accordance with some embodiments. ThePVD tool 500 shown inFIG. 5 includes ahousing 502 that defines, or encloses, aprocessing chamber 504, asubstrate support 506, afirst target assembly 508, and asecond target assembly 510. - The
housing 502 includes agas inlet 512 and agas outlet 514 near a lower region thereof on opposing sides of thesubstrate support 506. Thesubstrate support 506 is positioned near the lower region of thehousing 502 and in configured to support asubstrate 516. Thesubstrate 516 may be a round glass (e.g., borosilicate glass) substrate having a diameter of, for example, about 200 mm or about 300 mm. In other embodiments (such as in a manufacturing environment), thesubstrate 516 may have other shapes, such as square or rectangular, and may be significantly larger (e.g., about 0.5-about 6 m across). Thesubstrate support 506 includes asupport electrode 518 and is held at ground potential during processing, as indicated. - The first and second target assemblies (or process heads) 508 and 510 are suspended from an upper region of the
housing 502 within theprocessing chamber 504. Thefirst target assembly 508 includes afirst target 520 and afirst target electrode 522, and thesecond target assembly 510 includes asecond target 524 and asecond target electrode 526. As shown, thefirst target 520 and thesecond target 524 are oriented or directed towards thesubstrate 516. As is commonly understood, thefirst target 520 and thesecond target 524 include one or more materials that are to be used to deposit a layer ofmaterial 528 on the upper surface of thesubstrate 516. - The materials used in the
targets targets - The
PVD tool 500 also includes afirst power supply 530 coupled to thefirst target electrode 522 and a second power supply 532 coupled to thesecond target electrode 524. As is commonly understood, the power supplies 530 and 532 pulse direct current (DC) power to the respective electrodes, causing material to be, at least in some embodiments, simultaneously sputtered (i.e., co-sputtered) from the first andsecond targets - During sputtering, inert gases, such as argon or krypton, may be introduced into the
processing chamber 504 through thegas inlet 512, while a vacuum is applied to thegas outlet 514. However, in embodiments in which reactive sputtering is used, reactive gases may also be introduced, such as oxygen and/or nitrogen, which interact with particles ejected from the targets (i.e., to form oxides, nitrides, and/or oxynitrides). - Although not shown in
FIG. 5 , thePVD tool 500 may also include a control system having, for example, a processor and a memory, which is in operable communication with the other components shown inFIG. 5 and configured to control the operation thereof in order to perform the methods described herein. - Further, although the
PVD tool 500 shown inFIG. 5 includes astationary substrate support 506, it should be understood that in a manufacturing environment, thesubstrate 516 may be in motion (e.g., an inline configuration) during the various layers described herein. -
FIG. 6 is a flow chart illustrating amethod 600 for forming a low-e panel according to some embodiments. Themethod 600 begins atblock 602 by providing a transparent substrate, such as the examples described above (e.g., glass). - At
block 604, a base layer is formed above the transparent substrate. The base layer may have a refractive index of between about 1.7 and about 2.2, such as 2.0. The base layer may include zinc, tin, or a combination thereof. In some embodiments, the base layer is made of zinc-tin oxide. - At
block 606, a dielectric layer is formed above the base layer. The dielectric layer may have a refractive index of between about 2.3 about 2.5, such as 2.4. The dielectric layer may include niobium. In some embodiments, the dielectric layer is made of niobium oxide. - At
block 608, a seed layer is formed above the dielectric layer. The seed layer may include zinc. In some embodiments, the seed layer is made of zinc oxide. Atblock 610, a reflective layer is formed above the seed layer. In some embodiments, the reflective layer is made of silver. Although not shown, block 610 (or themethod 600 as a whole) may also include the formation of other layers above the reflective layer, such as the barrier layer, the over-coating layers, and the protective layer described above. Atblock 612, themethod 608 ends. - Thus, in some embodiments, a method for forming a low-e panel is provided. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A metal oxide layer is formed between the transparent substrate and the reflective layer. A base layer is formed between transparent substrate and the metal oxide layer. The base layer has a first refractive index. A dielectric layer is formed between the base layer and the metal oxide layer. The dielectric layer includes niobium and has a second refractive index.
- In some embodiments, a method for forming a low-e panel is provided. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. The reflective layer includes silver. A seed layer is formed between the transparent substrate and the reflective layer. A base layer is formed between the transparent substrate and the seed layer. A dielectric layer is formed between the base layer and the seed layer. The dielectric layer includes niobium oxide.
- In some embodiments, a low-e panel is provided. The low-e panel includes a transparent substrate, a reflective layer, and a metal oxide layer, a base layer, and a dielectric layer. The reflective layer is above the transparent substrate. The metal oxide layer is between the transparent substrate and the reflective layer. The base layer is between transparent substrate and the metal oxide layer. The base layer has a first refractive index. The dielectric layer is between the base layer and the metal oxide layer. The dielectric layer has a second refractive index greater than the first refractive index.
- In some embodiments, methods for forming a low-e panel are provided. A transparent substrate is provided. A first base layer is formed above the transparent substrate. The first base layer includes zinc and tin. A first dielectric layer is formed above the first base layer. The first dielectric layer includes niobium. A first seed layer is formed above the first dielectric layer. The first seed layer includes zinc. A first reflective layer is formed above the first seed layer. A first barrier layer is formed above the first reflective layer. The first barrier layer includes nickel, titanium, and niobium. A second base layer is formed above the first barrier layer. The second base layer includes zinc and tin. A second dielectric layer is formed above the second base layer. The second dielectric layer includes niobium. A second seed layer is formed above the second dielectric layer. The second seed layer includes zinc. A second reflective layer is formed above the second seed layer. A second barrier layer is formed above the second reflective layer. The second barrier layer includes nickel, titanium, and niobium. A first over-coating layer is formed above the second barrier layer. The first over-coating layer includes zinc and tin. A second over-coating layer is formed above the first over-coating layer. The second over-coating layer includes zinc. A capping layer is formed above the second over-coating layer. The first dielectric layer has a refractive index that is higher than a refractive index of the first base layer, and the second dielectric layer has a refractive index that is higher than a refractive index of the second base layer.
- In some embodiments, methods for forming a low-e panel are provided. A transparent substrate is provided. A first base layer is formed above the transparent substrate. The first base layer includes zinc and tin and has a refractive index of about 2.0. A first dielectric layer is formed above the first base layer. The first dielectric layer includes niobium and has a refractive index of between about 2.3 and about 2.5. A first seed layer is formed above the first dielectric layer. The first seed layer includes zinc. A first reflective layer is formed above the first seed layer. The first reflective layer includes silver. A first barrier layer is formed above the first reflective layer. The first barrier layer includes nickel, titanium, and niobium. A second base layer is formed above the first barrier layer. The second base layer includes zinc and tin and has a refractive index of about 2.0. A second dielectric layer is formed above the second base layer. The second dielectric layer includes niobium and has a refractive index between about 2.3 and about 2.5. A second seed layer is formed above the second dielectric layer. The second seed layer includes zinc. A second reflective layer is formed above the second seed layer. The second reflective layer includes silver. A second barrier layer is formed above the second reflective layer. The second barrier layer includes nickel, titanium, and niobium. A first over-coating layer is formed above the second barrier layer. The first over-coating layer includes zinc and tin. A second over-coating layer is formed above the first over-coating layer. The second over-coating layer includes zinc. A capping layer is formed above the second over-coating layer.
- In some embodiments, low-e panels are provided. The low-e panels include a transparent substrate. A first base layer is formed above the transparent substrate. The first base layer includes zinc and tin. A first dielectric layer is formed above the first base layer. The first dielectric layer includes niobium. A first seed layer is formed above the first dielectric layer. The first seed layer includes zinc. A first reflective layer is formed above the first seed layer. A first barrier layer is formed above the first reflective layer. The first barrier layer includes nickel, titanium, and niobium. A second base layer is formed above the first barrier layer. The second base layer includes zinc and tin. A second dielectric layer is formed above the second base layer. The second dielectric layer includes niobium. A second seed layer is formed above the second dielectric layer. The second seed layer includes zinc. A second reflective layer is formed above the second seed layer. A second barrier layer is formed above the second reflective layer. The second barrier layer includes nickel, titanium, and niobium. A first over-coating layer is formed above the second barrier layer. The first over-coating layer includes zinc and tin. A second over-coating layer is formed above the first over-coating layer. The second over-coating layer includes zinc. A capping layer is formed above the second over-coating layer. The first dielectric layer has a refractive index that is higher than a refractive index of the first base layer, and the second dielectric layer has a refractive index that is higher than a refractive index of the second base layer.
- Although the foregoing examples have been described in some detail for purposes of clarity of understanding, the invention is not limited to the details provided. There are many alternative ways of implementing the invention. The disclosed examples are illustrative and not restrictive.
Claims (20)
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FR2719036B1 (en) | 1994-04-21 | 1996-05-24 | Saint Gobain Vitrage | Glass substrates coated with a stack of thin layers, with infrared reflection properties and / or in the field of solar radiation. |
US5821001A (en) | 1996-04-25 | 1998-10-13 | Ppg Industries, Inc. | Coated articles |
US20020136905A1 (en) * | 1999-11-24 | 2002-09-26 | Medwick Paul A. | Low shading coefficient and low emissivity coatings and coated articles |
US6524647B1 (en) | 2000-03-24 | 2003-02-25 | Pilkington Plc | Method of forming niobium doped tin oxide coatings on glass and coated glass formed thereby |
US7267879B2 (en) * | 2001-02-28 | 2007-09-11 | Guardian Industries Corp. | Coated article with silicon oxynitride adjacent glass |
FR2818272B1 (en) * | 2000-12-15 | 2003-08-29 | Saint Gobain | GLAZING PROVIDED WITH A STACK OF THIN FILMS FOR SUN PROTECTION AND / OR THERMAL INSULATION |
ATE316517T1 (en) | 2002-03-01 | 2006-02-15 | Cardinal Cg Co | THIN FILM COATING WITH A NIOBIA TITANIUM LAYER |
RU2342335C2 (en) * | 2002-05-03 | 2008-12-27 | Ппг Индастриз Огайо, Инк. | Base sheet with thermotaxic coating for isolating glass block |
US6994910B2 (en) | 2003-01-09 | 2006-02-07 | Guardian Industries Corp. | Heat treatable coated article with niobium nitride IR reflecting layer |
WO2006048463A1 (en) * | 2004-11-08 | 2006-05-11 | Glaverbel | Glazing |
FR2893024B1 (en) * | 2005-11-08 | 2008-02-29 | Saint Gobain | SUBSTRATE PROVIDED WITH A STACK WITH THERMAL PROPERTIES |
BE1019346A3 (en) * | 2010-05-25 | 2012-06-05 | Agc Glass Europe | GLAZING OF SOLAR CONTROL. |
GB201102724D0 (en) * | 2011-02-17 | 2011-03-30 | Pilkington Group Ltd | Heat treatable coated glass pane |
US8709604B2 (en) * | 2011-03-03 | 2014-04-29 | Guardian Industries Corp. | Barrier layers comprising Ni-inclusive ternary alloys, coated articles including barrier layers, and methods of making the same |
US8679634B2 (en) | 2011-03-03 | 2014-03-25 | Guardian Industries Corp. | Functional layers comprising Ni-inclusive ternary alloys and methods of making the same |
US9221713B2 (en) | 2011-12-21 | 2015-12-29 | Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) | Coated article with low-E coating having barrier layer system(s) including multiple dielectric layers, and/or methods of making the same |
KR101739563B1 (en) * | 2013-03-12 | 2017-06-01 | 비트로, 에스.에이.비. 데 씨.브이. | Solar control coatings providing increased absorption or tint |
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