US20150275364A1 - Cyclic Spike Anneal Chemical Exposure For Low Thermal Budget Processing - Google Patents
Cyclic Spike Anneal Chemical Exposure For Low Thermal Budget Processing Download PDFInfo
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- US20150275364A1 US20150275364A1 US14/666,689 US201514666689A US2015275364A1 US 20150275364 A1 US20150275364 A1 US 20150275364A1 US 201514666689 A US201514666689 A US 201514666689A US 2015275364 A1 US2015275364 A1 US 2015275364A1
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- 238000012545 processing Methods 0.000 title claims abstract description 141
- 125000004122 cyclic group Chemical group 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 313
- 239000000758 substrate Substances 0.000 claims abstract description 172
- 238000000034 method Methods 0.000 claims abstract description 66
- 238000000137 annealing Methods 0.000 claims abstract description 57
- 230000008569 process Effects 0.000 claims abstract description 57
- 238000009826 distribution Methods 0.000 claims description 99
- 238000010926 purge Methods 0.000 claims description 52
- 238000003672 processing method Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 abstract description 21
- 235000012431 wafers Nutrition 0.000 description 40
- 238000011282 treatment Methods 0.000 description 30
- 238000000429 assembly Methods 0.000 description 25
- 230000000712 assembly Effects 0.000 description 25
- 238000000151 deposition Methods 0.000 description 25
- 210000002381 plasma Anatomy 0.000 description 24
- 239000002243 precursor Substances 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 14
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 238000012546 transfer Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012864 cross contamination Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229940126062 Compound A Drugs 0.000 description 2
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000012713 reactive precursor Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- -1 such as Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Definitions
- Embodiments of the disclosure generally relate to an apparatus for processing substrates. More particularly, embodiments of the disclosure relate to modular capacitively coupled plasma sources for use with processing chambers including batch processors.
- Semiconductor device formation is commonly conducted in substrate processing systems or platforms containing multiple chambers, which may also be referred to as cluster tools.
- the purpose of a multi-chamber processing platform or cluster tool is to perform two or more processes on a substrate sequentially in a controlled environment.
- a multiple chamber processing platform may only perform a single processing part on substrates.
- the additional chambers can be employed to maximize the rate at which substrates are processed.
- the process performed on substrates is typically a batch process, wherein a relatively large number of substrates, e.g. 25 or 50, are processed in a given chamber simultaneously. Batch processing is especially beneficial for processes that are too time-consuming to be performed on individual substrates in an economically viable manner, such as for atomic layer deposition (ALD) processes and some chemical vapor deposition (CVD) processes.
- ALD atomic layer deposition
- CVD chemical vapor deposition
- the effectiveness of a substrate processing platform is often quantified by cost of ownership.
- the cost of ownership while influenced by many factors, is largely affected by the system footprint, i.e., the total floor space to operate the system in a fabrication plant, and system throughput, i.e., the number of substrates processed per hour.
- the footprint typically includes access areas adjacent the system that are used for maintenance.
- a substrate processing platform may be relatively small access from all sides for operation and maintenance may make the effective footprint prohibitively large.
- FEOL Front-end-of-line
- BEOL back-end-of-line
- Embodiments of the disclosure are directed to a processing chamber comprising a generally circular gas distribution assembly, a generally circular susceptor assembly and at least one energy source.
- the general circular gas distribution assembly comprises a plurality of elongate gas ports in a front face of the gas distribution assembly.
- the plurality of elongate gas ports extend from an inner diameter region to an outer diameter region of the gas distribution assembly.
- the plurality of gas ports comprises at least one first reactive gas port to deliver a first reactive gas to the processing chamber, a purge gas port to deliver a purge gas to the processing chamber and a vacuum port to evacuate gases from the processing chamber, the vacuum port positioned between the first reactive gas port and the purge gas port.
- the generally circular susceptor assembly can rotate at least one substrate in a substantially circular path about a rotational axis.
- the susceptor assembly is positioned below the gas distribution assembly so that a top surface of the susceptor assembly is substantially parallel to the front face of the gas distribution assembly.
- the susceptor assembly has an inner diameter region and an outer diameter region.
- the at least one energy source is oriented to direct annealing energy toward the top surface of the susceptor assembly.
- Additional embodiments of the disclosure are directed to processing chambers comprising a generally circular gas distribution assembly, a generally circular susceptor assembly and at least one energy source.
- the generally circular gas distribution assembly comprises a plurality of elongate gas ports in a front face of the gas distribution assembly.
- the plurality of elongate gas ports extend from an inner diameter region to an outer diameter region of the gas distribution assembly.
- the plurality of gas ports comprises, in order, a first reactive gas port to deliver a first reactive gas to the processing chamber, a first vacuum port to evacuate gases from the processing chamber, a purge gas port to deliver a purge gas to the processing chamber and a second vacuum port to evacuate gases from the processing chamber.
- the generally circular susceptor assembly can rotate at least one substrate in a substantially circular path about a rotational axis.
- the susceptor assembly is positioned below the gas distribution assembly so that a top surface of the susceptor assembly is substantially parallel to the front face of the gas distribution assembly.
- the susceptor assembly has an inner diameter region and an outer diameter region.
- the at least one energy source is positioned between the first vacuum port and the second vacuum port and oriented to direct annealing energy toward the top surface of the susceptor assembly.
- the annealing energy is movable in a direction from the inner diameter region to the outer diameter region of the susceptor assembly.
- a substrate is positioned on a rotatable susceptor assembly in a processing chamber.
- the substrate is laterally moved around a central axis to move the substrate beneath a first reactive gas port of a gas distribution assembly.
- the first reactive gas port provides a first reactive gas to the processing chamber.
- the substrate is exposed to a first process condition comprising the first reactive gas to form a partial film on the substrate surface.
- the substrate is laterally moved around the central axis through at least one vacuum region defining a boundary of the first process condition.
- the gas distribution assembly has in the vacuum region a vacuum port to evacuate gases from the processing chamber.
- the substrate surface is exposed to annealing energy to convert the partial film to a film.
- FIG. 1 is a cross-sectional side view of a spatial atomic layer deposition chamber in accordance with one or more embodiment of the disclosure
- FIG. 2 shows a perspective view of a susceptor in accordance with one or more embodiments of the disclosure
- FIG. 3 shows a schematic of a pie-shaped gas distribution assembly in accordance with one or more embodiments of the disclosure
- FIG. 4 is a schematic plan view of a substrate processing system configured with four gas distribution assembly units with a loading station in accordance with one or more embodiments of the disclosure;
- FIG. 5 is a schematic plan view of a substrate processing system configured with three gas distribution assembly units
- FIG. 6 shows a cross-sectional view of a processing chamber in accordance with one or more embodiments of the disclosure
- FIG. 7 shows a perspective view of a susceptor assembly and gas distribution assembly units in accordance with one or more embodiments of the disclosure
- FIG. 8 shows a cross-sectional view of a processing chamber in accordance with one or more embodiments of the disclosure
- FIG. 9 shows a schematic of a pie-shaped gas distribution assembly in accordance with one or more embodiments of the disclosure.
- FIG. 10 shows a schematic of a portion of a pie-shaped gas distribution assembly in accordance with one or more embodiment of the disclosure
- FIG. 11A shows a schematic cross-sectional view of a gas distribution assembly with energy source in accordance with one or more embodiment of the disclosure.
- FIG. 11B shows a schematic cross-sectional view of a gas distribution assembly with energy source in accordance with one or more embodiment of the disclosure.
- Embodiments of the disclosure provide a substrate processing system for continuous substrate deposition to maximize throughput and improve processing efficiency and uniformity.
- the substrate processing system can also be used for pre-deposition and post-deposition substrate treatments.
- Embodiments of the disclosure are related to apparatus and methods for increasing deposition uniformity in a batch processor.
- substrate and “wafer” are used interchangeably, both referring to a surface, or portion of a surface, upon which a process acts. It will also be understood by those skilled in the art that reference to a substrate can also refer to only a portion of the substrate, unless the context clearly indicates otherwise. For example, in spatially separated ALD, described with respect to FIG. 1 , each precursor is delivered to the substrate, but any individual precursor stream, at any given time, is only delivered to a portion of the substrate. Additionally, reference to depositing on a substrate can mean both a bare substrate and a substrate with one or more films or features deposited or formed thereon.
- reactive gas As used in this specification and the appended claims, the terms “reactive gas”, “precursor”, “reactant”, and the like, are used interchangeably to mean a gas that includes a species which is reactive in an atomic layer deposition process. For example, a first “reactive gas” may simply adsorb onto the surface of a substrate and be available for further chemical reaction with a second reactive gas.
- aspects of the disclosure pertain to utilization of short time laser spike anneal with deposition processes.
- the lasers rapidly scan over a wafer and make the wafer very hot for a very short amount of time. Such lasers are not typically done during deposition processes because the laser would interfere with the deposition gases and the gases would interfere with the laser optics.
- laser spike anneal is combined with spatial atomic layer deposition processes.
- Deposition of a film may be carried out in a chemical area, the wafer moved to a laser area where the film gets hardened, and then back to the chemical area for additional deposition.
- silane adsorbs onto a wafer surface at 300° C. but is not set until 10,000° C.
- the silane can be deposited at a lower temperature, and then briefly exposed to the high temperatures of the laser without damaging the underlying layers.
- the spike anneal may be done in a temporally where the gases are evacuated from the chamber before lasing the surface or by moving the wafer to a separate processing chamber for lasing.
- FIG. 1 is a schematic cross-sectional view of a portion of a processing chamber 20 in accordance with one or more embodiments of the disclosure.
- the processing chamber 20 is generally a sealable enclosure, which is operated under vacuum, or at least low pressure conditions.
- the system 100 includes a gas distribution assembly 30 capable of distributing one or more gases across the top surface 61 of a substrate 60 .
- the gas distribution assembly 30 can be any suitable assembly known to those skilled in the art, and specific gas distribution assemblies described should not be taken as limiting the scope of the invention.
- the output face of the gas distribution assembly 30 faces the first surface 61 of the substrate 60 .
- Substrates for use with the embodiments of the disclosure can be any suitable substrate.
- the substrate is a rigid, discrete, generally planar substrate.
- the term “discrete” when referring to a substrate means that the substrate has a fixed dimension.
- the substrate of one or more embodiments is a semiconductor substrate, such as a 200 mm or 300 mm diameter silicon substrate.
- the substrate is one or more of silicon, silicon germanium, gallium arsenide, gallium nitride, germanium, gallium phosphide, indium phosphide, sapphire and silicon carbide.
- the gas distribution assembly 30 comprises a plurality of gas ports to transmit one or more gas streams to the substrate 60 and a plurality of vacuum ports disposed between each gas port to transmit the gas streams out of the processing chamber 20 .
- the gas distribution assembly 30 comprises a first precursor injector 120 , a second precursor injector 130 and a purge gas injector 140 .
- the injectors 120 , 130 , 140 may be controlled by a system computer (not shown), such as a mainframe, or by a chamber-specific controller, such as a programmable logic controller.
- the precursor injector 120 injects a continuous (or pulse) stream of a reactive precursor of compound A into the processing chamber 20 through a plurality of gas ports 125 .
- the precursor injector 130 injects a continuous (or pulse) stream of a reactive precursor of compound B into the processing chamber 20 through a plurality of gas ports 135 .
- the purge gas injector 140 injects a continuous (or pulse) stream of a non-reactive or purge gas into the processing chamber 20 through a plurality of gas ports 145 .
- the purge gas removes reactive material and reactive by-products from the processing chamber 20 .
- the purge gas is typically an inert gas, such as, nitrogen, argon and helium.
- Gas ports 145 are disposed in between gas ports 125 and gas ports 135 so as to separate the precursor of compound A from the precursor of compound B, avoiding cross-contamination between the precursors.
- a remote plasma source may be connected to the precursor injector 120 and the precursor injector 130 prior to injecting the precursors into the processing chamber 20 .
- the plasma of reactive species may be generated by applying an electric field to a compound within the remote plasma source.
- Any power source that is capable of activating the intended compounds may be used.
- power sources using DC, radio frequency (RF), and microwave (MW) based discharge techniques may be used. If an RF power source is used, the power source can be either capacitively or inductively coupled.
- the activation may also be generated by a thermally based technique, a gas breakdown technique, a high energy light source (e.g., UV energy), or exposure to an x-ray source.
- Exemplary remote plasma sources are available from vendors such as MKS Instruments, Inc. and Advanced Energy Industries, Inc.
- the system 100 further includes a pumping system 150 connected to the processing chamber 20 .
- the pumping system 150 is generally configured to evacuate the gas streams out of the processing chamber 20 through one or more vacuum ports 155 .
- the vacuum ports 155 are disposed between each gas port so as to evacuate the gas streams out of the processing chamber 20 after the gas streams react with the substrate surface and to further limit cross-contamination between the precursors.
- the system 100 includes a plurality of partitions 160 disposed on the processing chamber 20 between each port.
- a lower portion of each partition extends close to the first surface 61 of substrate 60 , for example, about 0.5 mm or greater from the first surface 61 .
- the lower portions of the partitions 160 are separated from the substrate surface by a distance sufficient to allow the gas streams to flow around the lower portions toward the vacuum ports 155 after the gas streams react with the substrate surface.
- Arrows 198 indicate the direction of the gas streams. Since the partitions 160 operate as a physical barrier to the gas streams, they also limit cross-contamination between the precursors.
- the arrangement shown is merely illustrative and should not be taken as limiting the scope of the invention. It will be understood by those skilled in the art that the gas distribution system shown is merely one possible distribution system and the other types of showerheads and gas distribution assemblies may be employed.
- Atomic layer deposition systems of this sort are referred to as spatial ALD.
- a substrate 60 is delivered (e.g., by a robot) to the processing chamber 20 and can be placed on a shuttle 65 before or after entry into the processing chamber.
- the shuttle 65 is moved along the track 70 , or some other suitable movement mechanism, through the processing chamber 20 , passing beneath (or above) the gas distribution assembly 30 .
- the shuttle 65 is moved in a linear path through the chamber.
- FIG. 3 shows an embodiment in which wafers are moved in a circular path through a carousel processing system.
- the first surface 61 of substrate 60 is repeatedly exposed to the reactive gas A coming from gas ports 125 and reactive gas B coming from gas ports 135 , with the purge gas coming from gas ports 145 in between. Injection of the purge gas is designed to remove unreacted material from the previous precursor prior to exposing the substrate surface 110 to the next precursor.
- the gas streams are evacuated through the vacuum ports 155 by the pumping system 150 . Since a vacuum port may be disposed on both sides of each gas port, the gas streams are evacuated through the vacuum ports 155 on both sides.
- each gas may be uniformly distributed across the substrate surface 110 .
- Arrows 198 indicate the direction of the gas flow.
- Substrate 60 may also be rotated while being exposed to the various gas streams. Rotation of the substrate may be useful in preventing the formation of strips in the formed layers. Rotation of the substrate can be continuous or in discrete steps and can occur while the substrate is passing beneath the gas distribution assembly 30 or when the substrate is in a region before and/or after the gas distribution assembly 30 .
- Sufficient space is generally provided after the gas distribution assembly 30 to ensure complete exposure to the last gas port.
- the extent to which the substrate surface 110 is exposed to each gas may be determined by, for example, the flow rates of each gas coming out of the gas port and the rate of movement of the substrate 60 . In one embodiment, the flow rates of each gas are controlled so as not to remove adsorbed precursors from the substrate surface 61 .
- the width between each partition, the number of gas ports disposed on the processing chamber 20 , and the number of times the substrate is passed across the gas distribution assembly may also determine the extent to which the substrate surface 61 is exposed to the various gases. Consequently, the quantity and quality of a deposited film may be optimized by varying the above-referenced factors.
- the orientation can be different.
- the gas distribution assembly 30 directs a flow of gas upward toward a substrate surface.
- the term “passed across” means that the substrate has been moved from one side of the gas distribution assembly to the other side so that the entire surface of the substrate is exposed to each gas stream from the gas distribution plate. Absent additional description, the term “passed across” does not imply any particular orientation of gas distribution assemblies, gas flows or substrate positions.
- the shuttle 65 is a susceptor 66 for carrying the substrate 60 .
- the susceptor 66 is a carrier which helps to form a uniform temperature across the substrate.
- the susceptor 66 is movable in both directions (left-to-right and right-to-left, relative to the arrangement of FIG. 1 ) or in a circular direction (relative to FIG. 3 ).
- the susceptor 66 has a top surface 67 for carrying the substrate 60 .
- the susceptor 66 may be a heated susceptor so that the substrate 60 may be heated for processing.
- the susceptor 66 may be heated by radiant heat lamps 90 , a heating plate, resistive coils, or other heating devices, disposed underneath the susceptor 66 .
- the top surface 67 of the susceptor 66 includes a recess 68 to accept the substrate 60 , as shown in FIG. 2 .
- the susceptor 66 is generally thicker than the thickness of the substrate so that there is susceptor material beneath the substrate.
- the recess 68 is sized such that when the substrate 60 is disposed inside the recess 68 , the first surface 61 of substrate 60 is level with, or substantially coplanar with, the top surface 67 of the susceptor 66 .
- the recess 68 of some embodiments is sized such that when a substrate 60 is disposed therein, the first surface 61 of the substrate 60 does not protrude above the top surface 67 of the susceptor 66 .
- the term “substantially coplanar” means that the top surface of the wafer and the top surface of the susceptor assembly are coplanar within ⁇ 0.2 mm. In some embodiments, the top surfaces are coplanar within ⁇ 0.15 mm, ⁇ 0.10 mm or ⁇ 0.05 mm.
- FIG. 1 shows a cross-sectional view of a processing chamber in which the individual gas ports are shown.
- This embodiment can be either a linear processing system in which the width of the individual gas ports is substantially the same across the entire width of the gas distribution plate, or a pie-shaped segment in which the individual gas ports change width to conform to the pie shape.
- FIG. 3 shows a portion of a pie-shaped gas distribution assembly 30 .
- a substrate would be passed across this gas distribution assembly 30 in an arc shape path 32 .
- Each of the individual gas ports 125 , 135 , 145 , 155 have a narrower width near the inner peripheral edge 33 of the gas distribution assembly 30 a and a larger width near the outer peripheral edge 34 of the gas distribution assembly 30 .
- the shape or aspect ratio of the individual ports can be proportional to, or different from, the shape or aspect ratio of the gas distribution assembly 30 segment.
- the individual ports are shaped so that each point of a wafer passing across the gas distribution assembly 30 following path 32 would have about the same residence time under each gas port.
- the path of the substrates can be perpendicular to the gas ports.
- each of the gas distribution assemblies comprise a plurality of elongate gas ports which extend in a direction substantially perpendicular to the path traversed by a substrate.
- substantially perpendicular means that the general direction of movement is approximately perpendicular to the axis of the gas ports.
- the axis of the gas port can be considered to be a line defined as the mid-point of the width of the port extending along the length of the port.
- each of the individual pie-shaped segments can be configured to deliver a single reactive gas or multiple reactive gases separated spatially or in combination (e.g., as in a typical CVD process).
- Processing chambers having multiple gas injectors can be used to process multiple wafers simultaneously so that the wafers experience the same process flow.
- the processing chamber 100 has four gas injector assemblies 30 and four wafers 60 .
- the wafers 60 can be positioned between the injector assemblies 30 .
- Rotating the susceptor 66 of the carousel by 45° will result in each wafer 60 being moved to an injector assembly 30 for film deposition. This is the position shown in FIG. 4 .
- An additional 45° rotation would move the wafers 60 away from the injector assemblies 30 .
- spatial ALD injectors a film is deposited on the wafer during movement of the wafer relative to the injector assembly.
- the susceptor 66 is rotated so that the wafers 60 do not stop beneath the injector assemblies 30 .
- the number of wafers 60 and gas distribution assemblies 30 can be the same or different. In some embodiments, there are the same number of wafers being processed as there are gas distribution assemblies. In one or more embodiments, the number of wafers being processed are an integer multiple of the number of gas distribution assemblies. For example, if there are four gas distribution assemblies, there are 4x wafers being processed, where x is an integer value greater than or equal to one.
- the processing chamber 100 shown in FIG. 4 is merely representative of one possible configuration and should not be taken as limiting the scope of the invention.
- the processing chamber 100 includes a plurality of gas distribution assemblies 30 .
- the processing chamber 100 shown is octagonal, however, those skilled in the art will understand that this is one possible shape and should not be taken as limiting the scope of the invention.
- the gas distribution assemblies 30 shown are rectangular, but those skilled in the art will understand that the gas distribution assemblies can be pie-shaped segments, like that shown in FIG. 3 . Additionally, each segment can be configured to deliver gases in a spatial type arrangement with multiple different reactive gases flowing from the same segment or configured to deliver a single reactive gas or a mixture of reactive gases.
- the processing chamber 100 includes a substrate support apparatus, shown as a round susceptor 66 or susceptor assembly.
- the substrate support apparatus, or susceptor 66 is capable of moving a plurality of substrates 60 beneath each of the gas distribution assemblies 30 .
- a load lock 82 might be connected to a side of the processing chamber 100 to allow the substrates 60 to be loaded/unloaded from the chamber 100 .
- the processing chamber 100 may include a plurality, or set, of first treatment stations 80 positioned between any or each of the plurality of gas distribution assemblies 30 .
- each of the first treatment stations 80 provides the same treatment to a substrate 60 .
- the number of treatment stations and the number of different types of treatment stations can vary depending on the process. For example, there can be one, two, three, four, five, six, seven or more treatment stations positioned between the gas distribution assemblies 30 . Each treatment stations can independently provide a different treatment from every other set of treatments station, or there can be a mixture of the same type and different types of treatments. In some embodiments, one or more of the individual treatments stations provides a different treatment than one or more of the other individual treatment stations.
- the embodiment shown in FIG. 4 shows four gas distribution assemblies with spaces between which can include some type of treatment station. However, it can be easily envisioned from this drawing that the processing chamber can readily be incorporated with eight gas distribution assemblies with the gas curtains between.
- a set of second treatment stations 85 are positioned between the first treatment stations 80 and the gas distribution assemblies 30 so that a substrate 60 rotated through the processing chamber 100 would encounter, depending on where the substrate 60 starts, a gas distribution assembly 30 , a first treatment station 80 and a second treatment station 85 before encountering a second of any of these.
- a gas distribution assembly 30 For example, as shown in FIG. 5 , if the substrate started at the first treatment station 80 , the substrate surface would “see” or be exposed to, in order, the first treatment station 80 , a gas distribution assembly 30 and a second treatment station 85 before encountering a second first treatment station 85 .
- Treatment stations can provide any suitable type of treatment to the substrate, film on the substrate or susceptor assembly.
- UV lamps, flash lamps, plasma sources and heaters The wafers are then moved between positions with the gas distribution assemblies 30 to a position with, for example, a showerhead delivering plasma to the wafer.
- the plasma station being referred to as a treatment station 80 .
- silicon nitride films can be formed with plasma treatment after each deposition layer. As the ALD reaction is, theoretically, self-limiting as long as the surface is saturated, additional exposure to the deposition gas will not cause damage to the film.
- Rotation of the carousel can be continuous or discontinuous.
- the wafers are constantly rotating so that they are exposed to each of the injectors in turn.
- the wafers can be moved to the injector region and stopped, and then to the region 84 between the injectors and stopped.
- the carousel can rotate so that the wafers move from an inter-injector region across the injector (or stop adjacent the injector) and on to the next inter-injector region where rotation can pause again. Pausing between the injectors may provide time for additional processing between each layer deposition (e.g., exposure to plasma).
- the processing chamber comprises a plurality of gas curtains 40 .
- Each gas curtain 40 creates a barrier to prevent, or minimize, the movement of processing gases from the gas distribution assemblies 30 from migrating from the gas distribution assembly regions and gases from the treatment stations 80 from migrating from the treatment station regions.
- the gas curtain 40 can include any suitable combination of gas and vacuum streams which can isolate the individual processing sections from the adjacent sections.
- the gas curtain 40 is a purge (or inert) gas stream.
- the gas curtain 40 is a vacuum stream that removes gases from the processing chamber.
- the gas curtain 40 is a combination of purge gas and vacuum streams so that there are, in order, a purge gas stream, a vacuum stream and a purge gas stream. In one or more embodiments, the gas curtain 40 is a combination of vacuum streams and purge gas streams so that there are, in order, a vacuum stream, a purge gas stream and a vacuum stream.
- the gas curtains 40 shown in FIG. 4 are positioned between each of the gas distribution assemblies 30 and treatment stations 80 , but it will be understood that the curtains can be positioned at any point or points along the processing path.
- FIG. 6 shows an embodiment of a processing chamber 200 including a gas distribution assembly 220 , also referred to as the injectors, and a susceptor assembly 230 .
- the susceptor assembly 230 is a rigid body.
- the rigid body of some embodiments has a droop tolerance no larger than 0.05 mm.
- Actuators 232 are placed, for example, at three locations at the outer diameter region of the susceptor assembly 230 .
- the terms “outer diameter” and “inner diameter” refer to regions near the outer peripheral edge and the inner edge, respectively.
- the outer diameter is not to a specific position at the extreme outer edge (e.g., near shaft 240 ) of the susceptor assembly 230 , but is a region near the outer edge 231 of the susceptor assembly 230 . This can be seen in FIG. 6 from the placement of the actuators 232 .
- the number of actuators 232 can vary from one to any number that will fit within the physical space available. Some embodiments have two, three, four or five sets of actuators 232 positioned in the outer diameter region 231 .
- the term “actuator” refers to any single or multi-component mechanism which is capable of moving the susceptor assembly 230 , or a portion of the susceptor assembly 230 , toward or away from the gas distribution assembly 220 .
- actuators 232 can be used to ensure that the susceptor assembly 230 is substantially parallel to the gas distribution assembly 220 .
- substantially parallel used in this regard means that the parallelism of the components does not vary by more than 5% relative to the distance between the components.
- the gap 210 distance can be set to be within the range of about 0.1 mm to about 2.0 mm, or in the range of about 0.2 mm to about 1.8 mm, or in the range of about 0.3 mm to about 1.7 mm, or in the range of about 0.4 mm to about 1.6 mm, or in the range of about 0.5 mm to about 1.5 mm, or in the range of about 0.6 mm to about 1.4 mm, or in the range of about 0.7 mm to about 1.3 mm, or in the range of about 0.8 mm to about 1.2 mm, or in the range of about 0.9 mm to about 1.1 mm, or about 1 mm.
- the susceptor assembly 230 is positioned beneath the gas distribution assembly 220 .
- the susceptor assembly 230 includes a top surface 241 and, optionally, at least one recess 243 in the top surface 241 .
- the recess 243 can be any suitable shape and size depending on the shape and size of the wafers 260 being processed.
- the recess 241 has a step region around the outer peripheral edge of the recess 241 .
- the steps can be sized to support the outer peripheral edge of the wafer 260 .
- the amount of the outer peripheral edge of the wafer 260 that is supported by the steps can vary depending on, for example, the thickness of the wafer and the presence of features already present on the back side of the wafer.
- the recess 243 in the top surface 241 of the susceptor assembly 230 is sized so that a wafer 260 supported in the recess 243 has a top surface 261 substantially coplanar with the top surface 241 of the susceptor assembly 230 .
- substantially coplanar means that the top surface of the wafer and the top surface of the susceptor assembly are coplanar within ⁇ 0.2 mm. In some embodiments, the top surfaces are coplanar within ⁇ 0.15 mm, ⁇ 0.10 mm or ⁇ 0.05 mm.
- the susceptor assembly 230 of FIG. 6 includes a support post 240 which is capable of lifting, lowering and rotating the susceptor assembly 230 .
- the susceptor assembly 230 may include a heater, or gas lines, or electrical components within the center of the support post 240 .
- the support post 240 may be the primary means of increasing or decreasing the gap between the susceptor assembly 230 and the gas distribution assembly 220 , moving the susceptor assembly 230 into rough position.
- the actuators 232 can then make micro-adjustments to the position of the susceptor assembly to create the desired gap.
- the processing chamber 100 shown in FIG. 6 is a carousel-type chamber in which the susceptor assembly 230 can hold a plurality of wafers 260 .
- the gas distribution assembly 220 may include a plurality of separate injector units 221 , each injector unit 221 being capable of depositing a film or part of a film on the wafer 260 , as the wafer is moved beneath the injector unit 221 .
- FIG. 7 shows a perspective view of a carousel-type processing chamber 200 . Two pie-shaped injector units 221 are shown positioned on approximately opposite sides of and above the susceptor assembly 230 . This number of injector units 221 is shown for illustrative purposes only.
- each of the individual pie-shaped injector units 221 may be independently moved, removed and/or replaced without affecting any of the other injector units 221 .
- one segment may be raised to permit a robot to access the region between the susceptor assembly 230 and gas distribution assembly 220 to load/unload wafers 260 .
- FIG. 8 shows another embodiment of the disclosure in which the susceptor assembly 230 is not a rigid body.
- the susceptor assembly 230 has a droop tolerance of not more than about 0.1 mm, or not more than about 0.05 mm, or not more than about 0.025 mm, or not more than about 0.01 mm.
- the actuators 232 can be positioned at any suitable number of places around the inner and outer periphery of the susceptor assembly 230 .
- the actuators 232 are placed at three locations at both the outer diameter region 231 and the inner diameter region 239 .
- the actuators 232 at both the outer diameter region 231 and the inner diameter region 239 apply pressure to the susceptor assembly 230 .
- FIG. 9 shows a gas distribution assembly 220 in accordance with one or more embodiment of the disclosure.
- the front face 225 of a portion or segment of a generally circular gas distribution assembly 220 is shown.
- generally circular means that the overall shape of the component does not have any angles less than 80°.
- generally circular can have any shape including square, pentagonal, hexagonal, heptagonal, octagonal, etc.
- Generally circular should not be taken as limiting the shape to a circle or perfect polygon, but can also include oval and imperfect polygons.
- the gas distribution assembly 220 includes a plurality of elongate gas ports 125 , 135 , 145 in the front face 225 .
- the gas ports extend from the inner diameter region 239 to an outer diameter region 231 of the gas distribution assembly 220 .
- the plurality of gas ports include a first reactive gas port 125 to deliver a first reactive gas to the processing chamber and a purge gas port 145 to deliver a purge gas to the processing chamber.
- the embodiment shown in FIG. 9 also includes a second reactive gas port 135 to deliver a second reactive gas to the processing chamber.
- a vacuum port 155 separates the first reactive gas port 125 and second reactive gas port 135 from the adjacent purge gas ports 145 . Stated differently, the vacuum port is positioned between the first reactive gas port 125 and the purge gas port 145 and between the second reactive gas port 135 and the purge gas port 145 .
- the vacuum ports evacuate gases from the processing chamber. In the embodiment shown in FIG. 9 , the vacuum ports 155 extend around all sides of the reactive gas ports so that there is a portion of the vacuum port 155 on the inner peripheral edge 227 and outer peripheral edge 228 of each of the first reactive gas port 125 and second reactive gas port 135 .
- a substrate is passed adjacent the gas distribution plate 220 along path 272 .
- the substrate will encounter gas flows, either flowing into the chamber or out of the chamber, in order, a purge gas port 145 , a first vacuum port 155 a , a first reactive gas port 125 , a second vacuum port 155 b , a purge gas port 145 , a first vacuum port 155 a , a second reactive gas port 135 and a second vacuum port 155 b .
- the first vacuum port 155 a and second vacuum port 155 b are shown connected as a single vacuum port 155 .
- At least one energy source 310 is oriented to direct annealing energy toward the top surface of the susceptor assembly.
- the term “energy source” is used to describe a device capable of providing sufficient energy to a portion of the susceptor assembly, or more specifically, to a substrate supported on the susceptor assembly.
- the energy provided referred to as “annealing energy” is capable of increasing the temperature of a portion of the substrate surface up to about 1000° C., or 900° C., or 800° C., or 700° C., or 600° C., or 500° C. or 400° C.
- the spike in temperature from the annealing energy is sufficient to decompose a molecule adsorbed to the surface without damaging the underlying layers.
- the annealing energy provided by the energy source 310 provides surface heating to cause a temperature spike from about 200-350° C. to about 700-900° C. and return to about 200-350° C. in less than about 100 nanoseconds.
- the rate of cooling, after exposure to the annealing energy is faster than rate at which heat can transfer into the bulk substrate (i.e., the underlying layers).
- the energy source is generally adapted to deliver electromagnetic energy to anneal certain desired regions of the substrate surface.
- Typical sources of electromagnetic energy include, but are not limited to, optical radiation sources (e.g., lasers), electron beam sources, ion beam sources, microwave energy sources, visible light sources and infra-red sources.
- the energy source can be continuous or pulsed.
- the wavelength of the radiation is typically less than about 800 nm, and can be delivered at deep ultraviolet, infrared or other wavelengths.
- the energy source may be an intense light source, such as a laser, that is adapted to deliver radiation at a wavelength between about 500 nm and about 11 micrometers.
- the energy source comprises a laser.
- Lasers can be any suitable type of laser capable of delivering high power laser radiation sufficient to rapidly heat a portion of the substrate surface to a temperature sufficient to degrade the adsorbed compounds without allowing time for the heat to transfer to and damage the bulk substrate.
- Suitable lasers include, but are not limited to, solid state lasers such as Nd:YAG, Nd:glass, titanium-sapphire, or other rare earth doped crystal lasers, gas lasers such as excimer lasers, for example, XeCl 2 , ArF and KrF.
- the position of the energy source 310 and any supporting components can be varied depending on the configuration of the gas distribution assembly.
- the energy source 310 is positioned in an outer peripheral region 231 or outside the outer peripheral edge 228 of the gas distribution assembly.
- the energy source 310 is positioned within a purge gas port 145 .
- At least one actuator 312 moves the energy source so that the annealing energy is moved in a direction perpendicular to the rotational axis of the susceptor assembly.
- the movement of the annealing energy moves between extremes at the inner diameter region and the outer diameter region, or from the inner peripheral edge to the outer peripheral edge. The distance between extremes defines the length of the movement of the annealing energy.
- the actuator 312 can be a motor that physically changes the orientation of the energy source 310 or can redirect the annealing energy emitted by the energy source.
- moving the energy source those skilled in the art will understand, that the energy source may remain stationary with just the annealing energy being moved. For example, FIG.
- FIG. 11A shows a cross-section of a gas distribution plate 220 with a view into the purge gas port 145 in which an energy source 310 emits annealing energy 311 .
- Actuator 312 moves the energy source 310 to angle the annealing energy 311 downwardly, as shown in phantom.
- energy source 310 directs annealing energy 311 toward mirror 314 which redirects the annealing energy toward the susceptor.
- the mirror 314 is connected to actuator 312 which can change the angle of the mirror 314 to redirect the annealing energy 311 in a different direction.
- the actuator 312 causes the annealing energy 311 to be scanned or rastered across the surface of the susceptor assembly from the inner diameter region to the outer diameter region, or stated differently, in a direction substantially perpendicular to path 272 .
- the movement of the annealing energy across the susceptor assembly can be smooth or rasterized. For example, the movement can be made up of a number of tiny steps occurring quickly enough to appear as a smooth movement.
- Some embodiments include a controller 320 to control the actuator 312 .
- the controller 320 can be any suitable controller capable of accurately controlling the actuator.
- the controller 320 can be programmed to move the annealing energy by adjusting the actuator 312 so that the annealing energy moves from the inner diameter region of the susceptor assembly to the outer diameter region in a substantially straight path.
- substantially straight means that there is less than a 1% absolute deviation in the linearity over the length of the movement.
- the rate of movement of the annealing energy can be adjusted depending on the specific energy source employed, the film being processed and the processing chamber.
- the controller may move the annealing energy at a substantially uniform rate.
- the movement of the annealing energy can be uniform or graded depending on the focus of the annealing energy.
- rotational movement of the susceptor assembly is taken into consideration, the outer peripheral edge of the susceptor assembly is moving faster than the inner peripheral edge. Therefore, uniform movement across the susceptor assembly would mean that there is relatively less exposure to the annealing energy per unit area near the outer diameter region than at the inner diameter region.
- the controller moves the energy source, and therefore the annealing energy, so that the annealing energy moves slower at the outer diameter region than at the inner diameter region.
- the variable rate of movement can be tuned so that the residence time of the annealing energy and/or the amount of energy per unit area is substantially uniform over the range of movement.
- a variable focus lens 314 can be incorporated so that the size of the annealing energy at the inner diameter region is smaller than the size of the annealing energy at the outer diameter region.
- the size of the annealing energy refers the area occupied by the annealing energy at any given time.
- a laser energy source projects collimated light onto the susceptor assembly. The area that the collimated light impacts is the size of the annealing energy.
- the purge gas port 145 has three energy sources 310 positioned therein.
- a single controller 312 is shown, but each energy source can have a separate controller or all energy sources can be controlled by a single controller either in unison or independently.
- the three energy sources can be controlled so that the annealing energy projected from each source covers the same region of the susceptor assembly or different regions.
- all three energy sources can be controlled so that their combined energy contacts the susceptor assembly at a single point that moves from the inner diameter region to the outer diameter region of the susceptor assembly.
- each source moves independently so that each source directs energy to different regions of the susceptor assembly. The different regions can overlap or be separate.
- the energy sources can be positioned within the purge gas port 145 as shown in the Figures, or outside the purge gas port, as shown in FIG. 10 . To ensure that that there is no interaction between the process gases and the annealing energy, the energy source of some embodiments is positioned between the vacuum ports 155 positioned on either side of the purge gas port 145 .
- At least one detector 330 is included in the system to sense or measure the temperature of one or more portions of the susceptor assembly or substrate.
- the detector can be any suitable type of detector including, but not limited to, pyrometers.
- FIG. 10 shows an embodiment with a single detector 330 positioned within the purge gas port 145 and a single detector 330 positioned outside the purge gas port. To help ensure that deposition gases do not foul the detector, in some embodiments, the detector is positioned between the vacuum ports 155 on either side of the purge gas port 145 .
- Some embodiments of the disclosure are directed to methods of processing a substrate.
- a substrate is placed into a processing chamber which has a plurality of sections, with each section separated from adjacent sections by a gas curtain.
- the terms “section”, “region” and “sector” are used interchangeably to describe an area within a batch processing chamber.
- the component shown in FIG. 9 has two sections.
- the substrate also called a wafer
- Each section can have the same or different processing conditions from the adjacent sections.
- processing condition means the entirety of the conditions within the individual section.
- processing conditions include, but are not limited to, gas composition, pressure, flow rate, temperature and plasma. Processing conditions can be configured to, for example, deposition, etching and treatment (e.g., densification, annealing).
- the substrate In the first section, the substrate, or a portion of the substrate, is exposed to a first process condition to deposit a first film on the surface of the substrate.
- the substrate surface can be a bare substrate surface or any layer previously deposited on the surface.
- the surface may have a mixed composition with one part being a metal and the other a dielectric.
- the individual surface composition can vary and should not be taken as limiting the scope of the invention.
- any of the films deposited or formed can be a complete film, such as a metal or dielectric film, or can be a partial film as in the first half of a two-part reaction.
- An example of a partial film would be the chemisorption of a compound to a substrate surface that will later be decomposed by the energy source and annealing energy to produce the final film.
- Formation of the first film may be, for example, the deposition of a metal hydride onto the surface of the substrate (e.g., SiH 4 ).
- the substrate is laterally moved through a gas curtain to a second section of the processing chamber.
- the first film is exposed to second process conditions to form a second film.
- the second process condition of some embodiments comprises exposure to annealing energy from an energy source to decompose the first film.
- silane deposited on the surface can be decomposed with a laser to form a silicon film.
- the substrate is exposed to the first process conditions, the second process conditions and a gas curtain which separates the two.
- the gas curtain can be, for example, a combination of inert gases and vacuum to ensure that there is minimal, if any, gas phase reaction between the first process conditions and the second process conditions.
- part of the surface is exposed to the first process conditions, another part of the surface is exposed to the second process conditions and an intermediate portion, between the other two portions, of the substrate is exposed to the gas curtain.
- the gas curtain includes the energy source which exposes the portion of the substrate within the gas curtain to the annealing energy.
- the second process condition can be the same as the first process condition so that a thicker film can be deposited and annealed as the substrate rotates through the processing chamber.
- the exposure to the first process conditions and the second process conditions can be repeated sequentially to grow a film of desired thickness.
- the batch processing chamber may contain two sections with the first process conditions and two sections of the second process conditions in alternating pattern, so that rotation of the substrate around the central axis of the processing chamber causes the surface to be sequentially and repeatedly exposed to the first and second process conditions so that each exposure causes the film thickness (for depositions) to grow.
- one or more layers may be formed during a plasma enhanced atomic layer deposition (PEALD) process.
- PEALD plasma enhanced atomic layer deposition
- the use of plasma provides sufficient energy to promote a species into the excited state where surface reactions become favorable and likely.
- Introducing the plasma into the process can be continuous or pulsed.
- sequential pulses of precursors (or reactive gases) and plasma are used to process a layer.
- the reagents may be ionized either locally (i.e., within the processing area) or remotely (i.e., outside the processing area). In some embodiments, remote ionization can occur upstream of the deposition chamber such that ions or other energetic or light emitting species are not in direct contact with the depositing film.
- the plasma is generated external from the processing chamber, such as by a remote plasma generator system.
- the plasma may be generated via any suitable plasma generation process or technique known to those skilled in the art.
- plasma may be generated by one or more of a microwave (MW) frequency generator or a radio frequency (RF) generator.
- MW microwave
- RF radio frequency
- the frequency of the plasma may be tuned depending on the specific reactive species being used. Suitable frequencies include, but are not limited to, 2 MHz, 13.56 MHz, 40 MHz, 60 MHz and 100 MHz.
- plasmas may be used during the deposition processes disclosed herein plasmas may not be required. Indeed, other embodiments relate to deposition processes under very mild conditions without a plasma.
- the substrate is subjected to processing prior to and/or after forming the layer.
- This processing can be performed in the same chamber or in one or more separate processing chambers.
- the substrate is moved from the first chamber to a separate, second chamber for further processing.
- the substrate can be moved directly from the first chamber to the separate processing chamber, or the substrate can be moved from the first chamber to one or more transfer chambers, and then moved to the desired separate processing chamber.
- the processing apparatus may comprise multiple chambers in communication with a transfer station. An apparatus of this sort may be referred to as a “cluster tool” or “clustered system”, and the like.
- a cluster tool is a modular system comprising multiple chambers which perform various functions including substrate center-finding and orientation, degassing, annealing, deposition and/or etching.
- a cluster tool includes at least a first chamber and a central transfer chamber.
- the central transfer chamber may house a robot that can shuttle substrates between and among processing chambers and load lock chambers.
- the transfer chamber is typically maintained at a vacuum condition and provides an intermediate stage for shuttling substrates from one chamber to another and/or to a load lock chamber positioned at a front end of the cluster tool.
- Two well-known cluster tools which may be adapted for the present invention are the Centura® and the Endura®, both available from Applied Materials, Inc., of Santa Clara, Calif.
- staged-vacuum substrate processing apparatus is disclosed in U.S. Pat. No. 5,186,718, entitled “Staged-Vacuum Wafer Processing Apparatus and Method,” Tepman et al., issued on Feb. 16, 1993.
- processing chambers which may be used include, but are not limited to, cyclical layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etch, pre-clean, chemical clean, thermal treatment such as RTP, plasma nitridation, degas, orientation, hydroxylation and other substrate processes.
- CLD cyclical layer deposition
- ALD atomic layer deposition
- CVD chemical vapor deposition
- PVD physical vapor deposition
- etch pre-clean
- thermal treatment such as RTP, plasma nitridation, degas, orientation, hydroxylation and other substrate processes.
- the substrate is continuously under vacuum or “load lock” conditions, and is not exposed to ambient air when being moved from one chamber to the next.
- the transfer chambers are thus under vacuum and are “pumped down” under vacuum pressure.
- Inert gases may be present in the processing chambers or the transfer chambers.
- an inert gas is used as a purge gas to remove some or all of the reactants after forming the layer on the surface of the substrate.
- a purge gas is injected at the exit of the deposition chamber to prevent reactants from moving from the deposition chamber to the transfer chamber and/or additional processing chamber. Thus, the flow of inert gas forms a curtain at the exit of the chamber.
- the substrate can be heated or cooled.
- heating or cooling can be accomplished by any suitable means including, but not limited to, changing the temperature of the substrate support (e.g., susceptor) and flowing heated or cooled gases to the substrate surface.
- the substrate support includes a heater/cooler which can be controlled to change the substrate temperature conductively.
- the gases either reactive gases or inert gases
- a heater/cooler is positioned within the chamber adjacent the substrate surface to convectively change the substrate temperature.
- the substrate can also be stationary or rotated during processing.
- a rotating substrate can be rotated continuously or in discreet steps.
- a substrate may be rotated throughout the entire process, or the substrate can be rotated by a small amount between exposure to different reactive or purge gases.
- Rotating the substrate during processing may help produce a more uniform deposition or etch by minimizing the effect of, for example, local variability in gas flow geometries.
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Abstract
Provided are apparatus and methods for the sequential deposition and annealing of a film within a single processing chamber. An energy source positioned within the processing chamber in an area isolated from process gases can be used to rapidly form and decompose a film on the substrate without damaging underlying layers due to exceeding the thermal budget of the device being formed.
Description
- This application claims priority to U.S. Provisional Application No. 61/971,256, filed Mar. 27, 2014, the entire disclosure of which is hereby incorporated by reference herein.
- Embodiments of the disclosure generally relate to an apparatus for processing substrates. More particularly, embodiments of the disclosure relate to modular capacitively coupled plasma sources for use with processing chambers including batch processors.
- Semiconductor device formation is commonly conducted in substrate processing systems or platforms containing multiple chambers, which may also be referred to as cluster tools. In some instances, the purpose of a multi-chamber processing platform or cluster tool is to perform two or more processes on a substrate sequentially in a controlled environment. In other instances, however, a multiple chamber processing platform may only perform a single processing part on substrates. The additional chambers can be employed to maximize the rate at which substrates are processed. In the latter case, the process performed on substrates is typically a batch process, wherein a relatively large number of substrates, e.g. 25 or 50, are processed in a given chamber simultaneously. Batch processing is especially beneficial for processes that are too time-consuming to be performed on individual substrates in an economically viable manner, such as for atomic layer deposition (ALD) processes and some chemical vapor deposition (CVD) processes.
- The effectiveness of a substrate processing platform is often quantified by cost of ownership. The cost of ownership, while influenced by many factors, is largely affected by the system footprint, i.e., the total floor space to operate the system in a fabrication plant, and system throughput, i.e., the number of substrates processed per hour. The footprint typically includes access areas adjacent the system that are used for maintenance. Although a substrate processing platform may be relatively small access from all sides for operation and maintenance may make the effective footprint prohibitively large.
- During semiconductor manufacturing, certain processes use high temperatures to ensure that various chemical and physical reactions are completed. One such example of a high temperature process is the epitaxial growth of silicon. When there are underlying layers in a gate stack that are not tolerant of high temperatures, carrying out high temperature reactions may damage or destroy the underlying layers. Front-end-of-line (FEOL) processes allow for high temperature processes but by the time a product reaches the back-end-of-line (BEOL), there are often many layers which cannot tolerate high temperature processes, limiting what processes can be carried out.
- Therefore, there is an ongoing need in the art for apparatus and methods for processing high temperature reactions on substrates with low thermal budget.
- Embodiments of the disclosure are directed to a processing chamber comprising a generally circular gas distribution assembly, a generally circular susceptor assembly and at least one energy source. The general circular gas distribution assembly comprises a plurality of elongate gas ports in a front face of the gas distribution assembly. The plurality of elongate gas ports extend from an inner diameter region to an outer diameter region of the gas distribution assembly. The plurality of gas ports comprises at least one first reactive gas port to deliver a first reactive gas to the processing chamber, a purge gas port to deliver a purge gas to the processing chamber and a vacuum port to evacuate gases from the processing chamber, the vacuum port positioned between the first reactive gas port and the purge gas port. The generally circular susceptor assembly can rotate at least one substrate in a substantially circular path about a rotational axis. The susceptor assembly is positioned below the gas distribution assembly so that a top surface of the susceptor assembly is substantially parallel to the front face of the gas distribution assembly. The susceptor assembly has an inner diameter region and an outer diameter region. The at least one energy source is oriented to direct annealing energy toward the top surface of the susceptor assembly.
- Additional embodiments of the disclosure are directed to processing chambers comprising a generally circular gas distribution assembly, a generally circular susceptor assembly and at least one energy source. The generally circular gas distribution assembly comprises a plurality of elongate gas ports in a front face of the gas distribution assembly. The plurality of elongate gas ports extend from an inner diameter region to an outer diameter region of the gas distribution assembly. The plurality of gas ports comprises, in order, a first reactive gas port to deliver a first reactive gas to the processing chamber, a first vacuum port to evacuate gases from the processing chamber, a purge gas port to deliver a purge gas to the processing chamber and a second vacuum port to evacuate gases from the processing chamber. The generally circular susceptor assembly can rotate at least one substrate in a substantially circular path about a rotational axis. The susceptor assembly is positioned below the gas distribution assembly so that a top surface of the susceptor assembly is substantially parallel to the front face of the gas distribution assembly. The susceptor assembly has an inner diameter region and an outer diameter region. The at least one energy source is positioned between the first vacuum port and the second vacuum port and oriented to direct annealing energy toward the top surface of the susceptor assembly. The annealing energy is movable in a direction from the inner diameter region to the outer diameter region of the susceptor assembly.
- Further embodiments of the disclosure are directed to processing methods. A substrate is positioned on a rotatable susceptor assembly in a processing chamber. The substrate is laterally moved around a central axis to move the substrate beneath a first reactive gas port of a gas distribution assembly. The first reactive gas port provides a first reactive gas to the processing chamber. The substrate is exposed to a first process condition comprising the first reactive gas to form a partial film on the substrate surface. The substrate is laterally moved around the central axis through at least one vacuum region defining a boundary of the first process condition. The gas distribution assembly has in the vacuum region a vacuum port to evacuate gases from the processing chamber. The substrate surface is exposed to annealing energy to convert the partial film to a film.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
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FIG. 1 is a cross-sectional side view of a spatial atomic layer deposition chamber in accordance with one or more embodiment of the disclosure; -
FIG. 2 shows a perspective view of a susceptor in accordance with one or more embodiments of the disclosure; -
FIG. 3 shows a schematic of a pie-shaped gas distribution assembly in accordance with one or more embodiments of the disclosure; -
FIG. 4 is a schematic plan view of a substrate processing system configured with four gas distribution assembly units with a loading station in accordance with one or more embodiments of the disclosure; -
FIG. 5 is a schematic plan view of a substrate processing system configured with three gas distribution assembly units; -
FIG. 6 shows a cross-sectional view of a processing chamber in accordance with one or more embodiments of the disclosure; -
FIG. 7 shows a perspective view of a susceptor assembly and gas distribution assembly units in accordance with one or more embodiments of the disclosure; -
FIG. 8 shows a cross-sectional view of a processing chamber in accordance with one or more embodiments of the disclosure; -
FIG. 9 shows a schematic of a pie-shaped gas distribution assembly in accordance with one or more embodiments of the disclosure; -
FIG. 10 shows a schematic of a portion of a pie-shaped gas distribution assembly in accordance with one or more embodiment of the disclosure; -
FIG. 11A shows a schematic cross-sectional view of a gas distribution assembly with energy source in accordance with one or more embodiment of the disclosure; and -
FIG. 11B shows a schematic cross-sectional view of a gas distribution assembly with energy source in accordance with one or more embodiment of the disclosure. - Embodiments of the disclosure provide a substrate processing system for continuous substrate deposition to maximize throughput and improve processing efficiency and uniformity. The substrate processing system can also be used for pre-deposition and post-deposition substrate treatments. Embodiments of the disclosure are related to apparatus and methods for increasing deposition uniformity in a batch processor.
- As used in this specification and the appended claims, the term “substrate” and “wafer” are used interchangeably, both referring to a surface, or portion of a surface, upon which a process acts. It will also be understood by those skilled in the art that reference to a substrate can also refer to only a portion of the substrate, unless the context clearly indicates otherwise. For example, in spatially separated ALD, described with respect to
FIG. 1 , each precursor is delivered to the substrate, but any individual precursor stream, at any given time, is only delivered to a portion of the substrate. Additionally, reference to depositing on a substrate can mean both a bare substrate and a substrate with one or more films or features deposited or formed thereon. - As used in this specification and the appended claims, the terms “reactive gas”, “precursor”, “reactant”, and the like, are used interchangeably to mean a gas that includes a species which is reactive in an atomic layer deposition process. For example, a first “reactive gas” may simply adsorb onto the surface of a substrate and be available for further chemical reaction with a second reactive gas.
- Aspects of the disclosure pertain to utilization of short time laser spike anneal with deposition processes. The lasers rapidly scan over a wafer and make the wafer very hot for a very short amount of time. Such lasers are not typically done during deposition processes because the laser would interfere with the deposition gases and the gases would interfere with the laser optics.
- In one or more embodiments, laser spike anneal is combined with spatial atomic layer deposition processes. Deposition of a film may be carried out in a chemical area, the wafer moved to a laser area where the film gets hardened, and then back to the chemical area for additional deposition. For example, silane adsorbs onto a wafer surface at 300° C. but is not set until 10,000° C. With the laser spike anneal process, the silane can be deposited at a lower temperature, and then briefly exposed to the high temperatures of the laser without damaging the underlying layers. In some embodiments, the spike anneal may be done in a temporally where the gases are evacuated from the chamber before lasing the surface or by moving the wafer to a separate processing chamber for lasing.
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FIG. 1 is a schematic cross-sectional view of a portion of a processing chamber 20 in accordance with one or more embodiments of the disclosure. The processing chamber 20 is generally a sealable enclosure, which is operated under vacuum, or at least low pressure conditions. Thesystem 100 includes agas distribution assembly 30 capable of distributing one or more gases across thetop surface 61 of asubstrate 60. Thegas distribution assembly 30 can be any suitable assembly known to those skilled in the art, and specific gas distribution assemblies described should not be taken as limiting the scope of the invention. The output face of thegas distribution assembly 30 faces thefirst surface 61 of thesubstrate 60. - Substrates for use with the embodiments of the disclosure can be any suitable substrate. In some embodiments, the substrate is a rigid, discrete, generally planar substrate. As used in this specification and the appended claims, the term “discrete” when referring to a substrate means that the substrate has a fixed dimension. The substrate of one or more embodiments is a semiconductor substrate, such as a 200 mm or 300 mm diameter silicon substrate. In some embodiments, the substrate is one or more of silicon, silicon germanium, gallium arsenide, gallium nitride, germanium, gallium phosphide, indium phosphide, sapphire and silicon carbide.
- The
gas distribution assembly 30 comprises a plurality of gas ports to transmit one or more gas streams to thesubstrate 60 and a plurality of vacuum ports disposed between each gas port to transmit the gas streams out of the processing chamber 20. In the embodiment ofFIG. 1 , thegas distribution assembly 30 comprises afirst precursor injector 120, asecond precursor injector 130 and apurge gas injector 140. Theinjectors precursor injector 120 injects a continuous (or pulse) stream of a reactive precursor of compound A into the processing chamber 20 through a plurality ofgas ports 125. Theprecursor injector 130 injects a continuous (or pulse) stream of a reactive precursor of compound B into the processing chamber 20 through a plurality ofgas ports 135. Thepurge gas injector 140 injects a continuous (or pulse) stream of a non-reactive or purge gas into the processing chamber 20 through a plurality ofgas ports 145. The purge gas removes reactive material and reactive by-products from the processing chamber 20. The purge gas is typically an inert gas, such as, nitrogen, argon and helium.Gas ports 145 are disposed in betweengas ports 125 andgas ports 135 so as to separate the precursor of compound A from the precursor of compound B, avoiding cross-contamination between the precursors. - In another aspect, a remote plasma source (not shown) may be connected to the
precursor injector 120 and theprecursor injector 130 prior to injecting the precursors into the processing chamber 20. The plasma of reactive species may be generated by applying an electric field to a compound within the remote plasma source. Any power source that is capable of activating the intended compounds may be used. For example, power sources using DC, radio frequency (RF), and microwave (MW) based discharge techniques may be used. If an RF power source is used, the power source can be either capacitively or inductively coupled. The activation may also be generated by a thermally based technique, a gas breakdown technique, a high energy light source (e.g., UV energy), or exposure to an x-ray source. Exemplary remote plasma sources are available from vendors such as MKS Instruments, Inc. and Advanced Energy Industries, Inc. - The
system 100 further includes apumping system 150 connected to the processing chamber 20. Thepumping system 150 is generally configured to evacuate the gas streams out of the processing chamber 20 through one ormore vacuum ports 155. Thevacuum ports 155 are disposed between each gas port so as to evacuate the gas streams out of the processing chamber 20 after the gas streams react with the substrate surface and to further limit cross-contamination between the precursors. - The
system 100 includes a plurality ofpartitions 160 disposed on the processing chamber 20 between each port. A lower portion of each partition extends close to thefirst surface 61 ofsubstrate 60, for example, about 0.5 mm or greater from thefirst surface 61. In this manner, the lower portions of thepartitions 160 are separated from the substrate surface by a distance sufficient to allow the gas streams to flow around the lower portions toward thevacuum ports 155 after the gas streams react with the substrate surface.Arrows 198 indicate the direction of the gas streams. Since thepartitions 160 operate as a physical barrier to the gas streams, they also limit cross-contamination between the precursors. The arrangement shown is merely illustrative and should not be taken as limiting the scope of the invention. It will be understood by those skilled in the art that the gas distribution system shown is merely one possible distribution system and the other types of showerheads and gas distribution assemblies may be employed. - Atomic layer deposition systems of this sort (i.e., where multiple gases are separately flowed toward the substrate at the same time) are referred to as spatial ALD. In operation, a
substrate 60 is delivered (e.g., by a robot) to the processing chamber 20 and can be placed on ashuttle 65 before or after entry into the processing chamber. Theshuttle 65 is moved along thetrack 70, or some other suitable movement mechanism, through the processing chamber 20, passing beneath (or above) thegas distribution assembly 30. In the embodiment shown inFIG. 1 , theshuttle 65 is moved in a linear path through the chamber.FIG. 3 , as explained further below, shows an embodiment in which wafers are moved in a circular path through a carousel processing system. - Referring back to
FIG. 1 , as thesubstrate 60 moves through the processing chamber 20, thefirst surface 61 ofsubstrate 60 is repeatedly exposed to the reactive gas A coming fromgas ports 125 and reactive gas B coming fromgas ports 135, with the purge gas coming fromgas ports 145 in between. Injection of the purge gas is designed to remove unreacted material from the previous precursor prior to exposing the substrate surface 110 to the next precursor. After each exposure to the various gas streams (e.g., the reactive gases or the purge gas), the gas streams are evacuated through thevacuum ports 155 by thepumping system 150. Since a vacuum port may be disposed on both sides of each gas port, the gas streams are evacuated through thevacuum ports 155 on both sides. Thus, the gas streams flow from the respective gas ports vertically downward toward thefirst surface 61 of thesubstrate 60, across the substrate surface 110 and around the lower portions of thepartitions 160, and finally upward toward thevacuum ports 155. In this manner, each gas may be uniformly distributed across the substrate surface 110.Arrows 198 indicate the direction of the gas flow.Substrate 60 may also be rotated while being exposed to the various gas streams. Rotation of the substrate may be useful in preventing the formation of strips in the formed layers. Rotation of the substrate can be continuous or in discrete steps and can occur while the substrate is passing beneath thegas distribution assembly 30 or when the substrate is in a region before and/or after thegas distribution assembly 30. - Sufficient space is generally provided after the
gas distribution assembly 30 to ensure complete exposure to the last gas port. Once thesubstrate 60 has completely passed beneath thegas distribution assembly 30, thefirst surface 61 has completely been exposed to every gas port in the processing chamber 20. The substrate can then be transported back in the opposite direction or forward. If thesubstrate 60 moves in the opposite direction, the substrate surface may be exposed again to the reactive gas A, the purge gas, and reactive gas B, in reverse order from the first exposure. - The extent to which the substrate surface 110 is exposed to each gas may be determined by, for example, the flow rates of each gas coming out of the gas port and the rate of movement of the
substrate 60. In one embodiment, the flow rates of each gas are controlled so as not to remove adsorbed precursors from thesubstrate surface 61. The width between each partition, the number of gas ports disposed on the processing chamber 20, and the number of times the substrate is passed across the gas distribution assembly may also determine the extent to which thesubstrate surface 61 is exposed to the various gases. Consequently, the quantity and quality of a deposited film may be optimized by varying the above-referenced factors. - Although description of the process has been made with the
gas distribution assembly 30 directing a flow of gas downward toward a substrate positioned below the gas distribution assembly, the orientation can be different. In some embodiments, thegas distribution assembly 30 directs a flow of gas upward toward a substrate surface. As used in this specification and the appended claims, the term “passed across” means that the substrate has been moved from one side of the gas distribution assembly to the other side so that the entire surface of the substrate is exposed to each gas stream from the gas distribution plate. Absent additional description, the term “passed across” does not imply any particular orientation of gas distribution assemblies, gas flows or substrate positions. - In some embodiments, the
shuttle 65 is asusceptor 66 for carrying thesubstrate 60. Generally, thesusceptor 66 is a carrier which helps to form a uniform temperature across the substrate. Thesusceptor 66 is movable in both directions (left-to-right and right-to-left, relative to the arrangement ofFIG. 1 ) or in a circular direction (relative toFIG. 3 ). Thesusceptor 66 has atop surface 67 for carrying thesubstrate 60. Thesusceptor 66 may be a heated susceptor so that thesubstrate 60 may be heated for processing. As an example, thesusceptor 66 may be heated byradiant heat lamps 90, a heating plate, resistive coils, or other heating devices, disposed underneath thesusceptor 66. - In still another embodiment, the
top surface 67 of thesusceptor 66 includes arecess 68 to accept thesubstrate 60, as shown inFIG. 2 . Thesusceptor 66 is generally thicker than the thickness of the substrate so that there is susceptor material beneath the substrate. In some embodiments, therecess 68 is sized such that when thesubstrate 60 is disposed inside therecess 68, thefirst surface 61 ofsubstrate 60 is level with, or substantially coplanar with, thetop surface 67 of thesusceptor 66. Stated differently, therecess 68 of some embodiments is sized such that when asubstrate 60 is disposed therein, thefirst surface 61 of thesubstrate 60 does not protrude above thetop surface 67 of thesusceptor 66. As used in this specification and the appended claims, the term “substantially coplanar” means that the top surface of the wafer and the top surface of the susceptor assembly are coplanar within ±0.2 mm. In some embodiments, the top surfaces are coplanar within ±0.15 mm, ±0.10 mm or ±0.05 mm. -
FIG. 1 shows a cross-sectional view of a processing chamber in which the individual gas ports are shown. This embodiment can be either a linear processing system in which the width of the individual gas ports is substantially the same across the entire width of the gas distribution plate, or a pie-shaped segment in which the individual gas ports change width to conform to the pie shape.FIG. 3 shows a portion of a pie-shapedgas distribution assembly 30. A substrate would be passed across thisgas distribution assembly 30 in anarc shape path 32. Each of theindividual gas ports peripheral edge 33 of the gas distribution assembly 30 a and a larger width near the outerperipheral edge 34 of thegas distribution assembly 30. The shape or aspect ratio of the individual ports can be proportional to, or different from, the shape or aspect ratio of thegas distribution assembly 30 segment. In some embodiments, the individual ports are shaped so that each point of a wafer passing across thegas distribution assembly 30 followingpath 32 would have about the same residence time under each gas port. The path of the substrates can be perpendicular to the gas ports. In some embodiments, each of the gas distribution assemblies comprise a plurality of elongate gas ports which extend in a direction substantially perpendicular to the path traversed by a substrate. As used in this specification and the appended claims, the term “substantially perpendicular” means that the general direction of movement is approximately perpendicular to the axis of the gas ports. For a pie-shaped gas port, the axis of the gas port can be considered to be a line defined as the mid-point of the width of the port extending along the length of the port. As described further below, each of the individual pie-shaped segments can be configured to deliver a single reactive gas or multiple reactive gases separated spatially or in combination (e.g., as in a typical CVD process). - Processing chambers having multiple gas injectors can be used to process multiple wafers simultaneously so that the wafers experience the same process flow. For example, as shown in
FIG. 4 , theprocessing chamber 100 has fourgas injector assemblies 30 and fourwafers 60. At the outset of processing, thewafers 60 can be positioned between theinjector assemblies 30. Rotating thesusceptor 66 of the carousel by 45° will result in eachwafer 60 being moved to aninjector assembly 30 for film deposition. This is the position shown inFIG. 4 . An additional 45° rotation would move thewafers 60 away from theinjector assemblies 30. With spatial ALD injectors, a film is deposited on the wafer during movement of the wafer relative to the injector assembly. In some embodiments, thesusceptor 66 is rotated so that thewafers 60 do not stop beneath theinjector assemblies 30. The number ofwafers 60 andgas distribution assemblies 30 can be the same or different. In some embodiments, there are the same number of wafers being processed as there are gas distribution assemblies. In one or more embodiments, the number of wafers being processed are an integer multiple of the number of gas distribution assemblies. For example, if there are four gas distribution assemblies, there are 4x wafers being processed, where x is an integer value greater than or equal to one. - The
processing chamber 100 shown inFIG. 4 is merely representative of one possible configuration and should not be taken as limiting the scope of the invention. Here, theprocessing chamber 100 includes a plurality ofgas distribution assemblies 30. In the embodiment shown, there are fourgas distribution assemblies 30 evenly spaced about theprocessing chamber 100. Theprocessing chamber 100 shown is octagonal, however, those skilled in the art will understand that this is one possible shape and should not be taken as limiting the scope of the invention. Thegas distribution assemblies 30 shown are rectangular, but those skilled in the art will understand that the gas distribution assemblies can be pie-shaped segments, like that shown inFIG. 3 . Additionally, each segment can be configured to deliver gases in a spatial type arrangement with multiple different reactive gases flowing from the same segment or configured to deliver a single reactive gas or a mixture of reactive gases. - The
processing chamber 100 includes a substrate support apparatus, shown as around susceptor 66 or susceptor assembly. The substrate support apparatus, orsusceptor 66, is capable of moving a plurality ofsubstrates 60 beneath each of thegas distribution assemblies 30. Aload lock 82 might be connected to a side of theprocessing chamber 100 to allow thesubstrates 60 to be loaded/unloaded from thechamber 100. - The
processing chamber 100 may include a plurality, or set, offirst treatment stations 80 positioned between any or each of the plurality ofgas distribution assemblies 30. In some embodiments, each of thefirst treatment stations 80 provides the same treatment to asubstrate 60. - The number of treatment stations and the number of different types of treatment stations can vary depending on the process. For example, there can be one, two, three, four, five, six, seven or more treatment stations positioned between the
gas distribution assemblies 30. Each treatment stations can independently provide a different treatment from every other set of treatments station, or there can be a mixture of the same type and different types of treatments. In some embodiments, one or more of the individual treatments stations provides a different treatment than one or more of the other individual treatment stations. The embodiment shown inFIG. 4 shows four gas distribution assemblies with spaces between which can include some type of treatment station. However, it can be easily envisioned from this drawing that the processing chamber can readily be incorporated with eight gas distribution assemblies with the gas curtains between. - In the embodiment shown in
FIG. 5 , a set ofsecond treatment stations 85 are positioned between thefirst treatment stations 80 and thegas distribution assemblies 30 so that asubstrate 60 rotated through theprocessing chamber 100 would encounter, depending on where thesubstrate 60 starts, agas distribution assembly 30, afirst treatment station 80 and asecond treatment station 85 before encountering a second of any of these. For example, as shown inFIG. 5 , if the substrate started at thefirst treatment station 80, the substrate surface would “see” or be exposed to, in order, thefirst treatment station 80, agas distribution assembly 30 and asecond treatment station 85 before encountering a secondfirst treatment station 85. - Treatment stations can provide any suitable type of treatment to the substrate, film on the substrate or susceptor assembly. For example, UV lamps, flash lamps, plasma sources and heaters. The wafers are then moved between positions with the
gas distribution assemblies 30 to a position with, for example, a showerhead delivering plasma to the wafer. The plasma station being referred to as atreatment station 80. In one or more example, silicon nitride films can be formed with plasma treatment after each deposition layer. As the ALD reaction is, theoretically, self-limiting as long as the surface is saturated, additional exposure to the deposition gas will not cause damage to the film. - Rotation of the carousel can be continuous or discontinuous. In continuous processing, the wafers are constantly rotating so that they are exposed to each of the injectors in turn. In discontinuous processing, the wafers can be moved to the injector region and stopped, and then to the
region 84 between the injectors and stopped. For example, the carousel can rotate so that the wafers move from an inter-injector region across the injector (or stop adjacent the injector) and on to the next inter-injector region where rotation can pause again. Pausing between the injectors may provide time for additional processing between each layer deposition (e.g., exposure to plasma). - In some embodiments, the processing chamber comprises a plurality of
gas curtains 40. Eachgas curtain 40 creates a barrier to prevent, or minimize, the movement of processing gases from thegas distribution assemblies 30 from migrating from the gas distribution assembly regions and gases from thetreatment stations 80 from migrating from the treatment station regions. Thegas curtain 40 can include any suitable combination of gas and vacuum streams which can isolate the individual processing sections from the adjacent sections. In some embodiments, thegas curtain 40 is a purge (or inert) gas stream. In one or more embodiments, thegas curtain 40 is a vacuum stream that removes gases from the processing chamber. In some embodiments, thegas curtain 40 is a combination of purge gas and vacuum streams so that there are, in order, a purge gas stream, a vacuum stream and a purge gas stream. In one or more embodiments, thegas curtain 40 is a combination of vacuum streams and purge gas streams so that there are, in order, a vacuum stream, a purge gas stream and a vacuum stream. Thegas curtains 40 shown inFIG. 4 are positioned between each of thegas distribution assemblies 30 andtreatment stations 80, but it will be understood that the curtains can be positioned at any point or points along the processing path. -
FIG. 6 shows an embodiment of aprocessing chamber 200 including agas distribution assembly 220, also referred to as the injectors, and asusceptor assembly 230. In this embodiment, thesusceptor assembly 230 is a rigid body. The rigid body of some embodiments has a droop tolerance no larger than 0.05 mm.Actuators 232 are placed, for example, at three locations at the outer diameter region of thesusceptor assembly 230. As used in this specification and the appended claims, the terms “outer diameter” and “inner diameter” refer to regions near the outer peripheral edge and the inner edge, respectively. The outer diameter is not to a specific position at the extreme outer edge (e.g., near shaft 240) of thesusceptor assembly 230, but is a region near theouter edge 231 of thesusceptor assembly 230. This can be seen inFIG. 6 from the placement of theactuators 232. The number ofactuators 232 can vary from one to any number that will fit within the physical space available. Some embodiments have two, three, four or five sets ofactuators 232 positioned in theouter diameter region 231. As used in this specification and the appended claims, the term “actuator” refers to any single or multi-component mechanism which is capable of moving thesusceptor assembly 230, or a portion of thesusceptor assembly 230, toward or away from thegas distribution assembly 220. For example,actuators 232 can be used to ensure that thesusceptor assembly 230 is substantially parallel to thegas distribution assembly 220. As used in this specification and the appended claims, the term “substantially parallel” used in this regard means that the parallelism of the components does not vary by more than 5% relative to the distance between the components. - Once pressure is applied to the
susceptor assembly 230 from theactuators 232, thesusceptor assembly 230 can be levelled. As the pressure is applied by theactuators 232, thegap 210 distance can be set to be within the range of about 0.1 mm to about 2.0 mm, or in the range of about 0.2 mm to about 1.8 mm, or in the range of about 0.3 mm to about 1.7 mm, or in the range of about 0.4 mm to about 1.6 mm, or in the range of about 0.5 mm to about 1.5 mm, or in the range of about 0.6 mm to about 1.4 mm, or in the range of about 0.7 mm to about 1.3 mm, or in the range of about 0.8 mm to about 1.2 mm, or in the range of about 0.9 mm to about 1.1 mm, or about 1 mm. - The
susceptor assembly 230 is positioned beneath thegas distribution assembly 220. Thesusceptor assembly 230 includes atop surface 241 and, optionally, at least onerecess 243 in thetop surface 241. Therecess 243 can be any suitable shape and size depending on the shape and size of thewafers 260 being processed. In the embodiment shown, therecess 241 has a step region around the outer peripheral edge of therecess 241. The steps can be sized to support the outer peripheral edge of thewafer 260. The amount of the outer peripheral edge of thewafer 260 that is supported by the steps can vary depending on, for example, the thickness of the wafer and the presence of features already present on the back side of the wafer. - In some embodiments, as shown in
FIG. 6 , therecess 243 in thetop surface 241 of thesusceptor assembly 230 is sized so that awafer 260 supported in therecess 243 has atop surface 261 substantially coplanar with thetop surface 241 of thesusceptor assembly 230. As used in this specification and the appended claims, the term “substantially coplanar” means that the top surface of the wafer and the top surface of the susceptor assembly are coplanar within ±0.2 mm. In some embodiments, the top surfaces are coplanar within ±0.15 mm, ±0.10 mm or ±0.05 mm. - The
susceptor assembly 230 ofFIG. 6 includes asupport post 240 which is capable of lifting, lowering and rotating thesusceptor assembly 230. Thesusceptor assembly 230 may include a heater, or gas lines, or electrical components within the center of thesupport post 240. Thesupport post 240 may be the primary means of increasing or decreasing the gap between thesusceptor assembly 230 and thegas distribution assembly 220, moving thesusceptor assembly 230 into rough position. Theactuators 232 can then make micro-adjustments to the position of the susceptor assembly to create the desired gap. - The
processing chamber 100 shown inFIG. 6 is a carousel-type chamber in which thesusceptor assembly 230 can hold a plurality ofwafers 260. Thegas distribution assembly 220 may include a plurality ofseparate injector units 221, eachinjector unit 221 being capable of depositing a film or part of a film on thewafer 260, as the wafer is moved beneath theinjector unit 221.FIG. 7 shows a perspective view of a carousel-type processing chamber 200. Two pie-shapedinjector units 221 are shown positioned on approximately opposite sides of and above thesusceptor assembly 230. This number ofinjector units 221 is shown for illustrative purposes only. It will be understood that more orless injector units 221 can be included. In some embodiments, there are a sufficient number of pie-shapedinjector units 221 to form a shape conforming to the shape of thesusceptor assembly 230. In some embodiments, each of the individual pie-shapedinjector units 221 may be independently moved, removed and/or replaced without affecting any of theother injector units 221. For example, one segment may be raised to permit a robot to access the region between thesusceptor assembly 230 andgas distribution assembly 220 to load/unloadwafers 260. -
FIG. 8 shows another embodiment of the disclosure in which thesusceptor assembly 230 is not a rigid body. In some embodiments, thesusceptor assembly 230 has a droop tolerance of not more than about 0.1 mm, or not more than about 0.05 mm, or not more than about 0.025 mm, or not more than about 0.01 mm. Here, there areactuators 232 placed at theouter diameter region 231 and at theinner diameter region 239 of thesusceptor assembly 230. Theactuators 232 can be positioned at any suitable number of places around the inner and outer periphery of thesusceptor assembly 230. In some embodiments, theactuators 232 are placed at three locations at both theouter diameter region 231 and theinner diameter region 239. Theactuators 232 at both theouter diameter region 231 and theinner diameter region 239 apply pressure to thesusceptor assembly 230. -
FIG. 9 shows agas distribution assembly 220 in accordance with one or more embodiment of the disclosure. Thefront face 225 of a portion or segment of a generally circulargas distribution assembly 220 is shown. As used in this specification and the appended claims, the term “generally circular” means that the overall shape of the component does not have any angles less than 80°. Thus, generally circular can have any shape including square, pentagonal, hexagonal, heptagonal, octagonal, etc. Generally circular should not be taken as limiting the shape to a circle or perfect polygon, but can also include oval and imperfect polygons. Thegas distribution assembly 220 includes a plurality ofelongate gas ports front face 225. The gas ports extend from theinner diameter region 239 to anouter diameter region 231 of thegas distribution assembly 220. - The plurality of gas ports include a first
reactive gas port 125 to deliver a first reactive gas to the processing chamber and apurge gas port 145 to deliver a purge gas to the processing chamber. The embodiment shown inFIG. 9 also includes a secondreactive gas port 135 to deliver a second reactive gas to the processing chamber. - A
vacuum port 155 separates the firstreactive gas port 125 and secondreactive gas port 135 from the adjacentpurge gas ports 145. Stated differently, the vacuum port is positioned between the firstreactive gas port 125 and thepurge gas port 145 and between the secondreactive gas port 135 and thepurge gas port 145. The vacuum ports evacuate gases from the processing chamber. In the embodiment shown inFIG. 9 , thevacuum ports 155 extend around all sides of the reactive gas ports so that there is a portion of thevacuum port 155 on the innerperipheral edge 227 and outerperipheral edge 228 of each of the firstreactive gas port 125 and secondreactive gas port 135. - In use, a substrate is passed adjacent the
gas distribution plate 220 alongpath 272. In transit, the substrate will encounter gas flows, either flowing into the chamber or out of the chamber, in order, apurge gas port 145, afirst vacuum port 155 a, a firstreactive gas port 125, asecond vacuum port 155 b, apurge gas port 145, afirst vacuum port 155 a, a secondreactive gas port 135 and asecond vacuum port 155 b. Thefirst vacuum port 155 a andsecond vacuum port 155 b are shown connected as asingle vacuum port 155. - At least one
energy source 310 is oriented to direct annealing energy toward the top surface of the susceptor assembly. As used in this specification and the appended claims, the term “energy source” is used to describe a device capable of providing sufficient energy to a portion of the susceptor assembly, or more specifically, to a substrate supported on the susceptor assembly. According to some embodiments, the energy provided, referred to as “annealing energy” is capable of increasing the temperature of a portion of the substrate surface up to about 1000° C., or 900° C., or 800° C., or 700° C., or 600° C., or 500° C. or 400° C. in a time frame less than about 100 nanoseconds, or less than about 50 nanoseconds, or less than about 40 nanoseconds, or less than about 30 nanoseconds, or less than about 20 nanoseconds, or less than about 10 nanoseconds. The spike in temperature from the annealing energy is sufficient to decompose a molecule adsorbed to the surface without damaging the underlying layers. The annealing energy provided by theenergy source 310 provides surface heating to cause a temperature spike from about 200-350° C. to about 700-900° C. and return to about 200-350° C. in less than about 100 nanoseconds. The rate of cooling, after exposure to the annealing energy is faster than rate at which heat can transfer into the bulk substrate (i.e., the underlying layers). - The energy source is generally adapted to deliver electromagnetic energy to anneal certain desired regions of the substrate surface. Typical sources of electromagnetic energy include, but are not limited to, optical radiation sources (e.g., lasers), electron beam sources, ion beam sources, microwave energy sources, visible light sources and infra-red sources. The energy source can be continuous or pulsed. For laser anneal processes performed on a silicon containing substrate, the wavelength of the radiation is typically less than about 800 nm, and can be delivered at deep ultraviolet, infrared or other wavelengths. In one or more embodiment, the energy source may be an intense light source, such as a laser, that is adapted to deliver radiation at a wavelength between about 500 nm and about 11 micrometers.
- In some embodiments, the energy source comprises a laser. Lasers can be any suitable type of laser capable of delivering high power laser radiation sufficient to rapidly heat a portion of the substrate surface to a temperature sufficient to degrade the adsorbed compounds without allowing time for the heat to transfer to and damage the bulk substrate. Suitable lasers include, but are not limited to, solid state lasers such as Nd:YAG, Nd:glass, titanium-sapphire, or other rare earth doped crystal lasers, gas lasers such as excimer lasers, for example, XeCl2, ArF and KrF.
- The position of the
energy source 310 and any supporting components (e.g., mirrors, actuators, prisms, lenses) can be varied depending on the configuration of the gas distribution assembly. In the embodiment shown inFIGS. 8 and 9 , theenergy source 310 is positioned in an outerperipheral region 231 or outside the outerperipheral edge 228 of the gas distribution assembly. In other embodiments, shown inFIGS. 1 and 10 , theenergy source 310 is positioned within apurge gas port 145. - In some embodiments, at least one
actuator 312 moves the energy source so that the annealing energy is moved in a direction perpendicular to the rotational axis of the susceptor assembly. The movement of the annealing energy moves between extremes at the inner diameter region and the outer diameter region, or from the inner peripheral edge to the outer peripheral edge. The distance between extremes defines the length of the movement of the annealing energy. Theactuator 312 can be a motor that physically changes the orientation of theenergy source 310 or can redirect the annealing energy emitted by the energy source. When referring to moving the energy source, those skilled in the art will understand, that the energy source may remain stationary with just the annealing energy being moved. For example,FIG. 11A shows a cross-section of agas distribution plate 220 with a view into thepurge gas port 145 in which anenergy source 310 emits annealingenergy 311.Actuator 312 moves theenergy source 310 to angle the annealingenergy 311 downwardly, as shown in phantom. InFIG. 11B ,energy source 310 directs annealingenergy 311 towardmirror 314 which redirects the annealing energy toward the susceptor. Themirror 314 is connected to actuator 312 which can change the angle of themirror 314 to redirect the annealingenergy 311 in a different direction. - Through either
FIG. 11A or 11B, theactuator 312 causes the annealingenergy 311 to be scanned or rastered across the surface of the susceptor assembly from the inner diameter region to the outer diameter region, or stated differently, in a direction substantially perpendicular topath 272. The movement of the annealing energy across the susceptor assembly can be smooth or rasterized. For example, the movement can be made up of a number of tiny steps occurring quickly enough to appear as a smooth movement. - Some embodiments include a
controller 320 to control theactuator 312. Thecontroller 320 can be any suitable controller capable of accurately controlling the actuator. Thecontroller 320 can be programmed to move the annealing energy by adjusting theactuator 312 so that the annealing energy moves from the inner diameter region of the susceptor assembly to the outer diameter region in a substantially straight path. As used in this specification and the appended claims, the term “substantially straight” means that there is less than a 1% absolute deviation in the linearity over the length of the movement. - The rate of movement of the annealing energy can be adjusted depending on the specific energy source employed, the film being processed and the processing chamber. In a processing chamber with a straight path, like that of
FIG. 1 , the controller may move the annealing energy at a substantially uniform rate. - In a sector type system, like that of
FIG. 9 , the movement of the annealing energy can be uniform or graded depending on the focus of the annealing energy. When rotational movement of the susceptor assembly is taken into consideration, the outer peripheral edge of the susceptor assembly is moving faster than the inner peripheral edge. Therefore, uniform movement across the susceptor assembly would mean that there is relatively less exposure to the annealing energy per unit area near the outer diameter region than at the inner diameter region. This may not have a significant impact on the overall processing of the film as the energy source may be moving at a much faster rate than the rotation of the susceptor assembly so that the difference in residence times at the inner and outer regions is negligible or does not have an impact on the complete formation of the film with allowing heat to damage the bulk substrate. - In some embodiments, the controller moves the energy source, and therefore the annealing energy, so that the annealing energy moves slower at the outer diameter region than at the inner diameter region. The variable rate of movement can be tuned so that the residence time of the annealing energy and/or the amount of energy per unit area is substantially uniform over the range of movement.
- In some embodiments, a
variable focus lens 314 can be incorporated so that the size of the annealing energy at the inner diameter region is smaller than the size of the annealing energy at the outer diameter region. The size of the annealing energy refers the area occupied by the annealing energy at any given time. For example, a laser energy source projects collimated light onto the susceptor assembly. The area that the collimated light impacts is the size of the annealing energy. - Referring to
FIG. 10 , a portion of a gas distribution assembly according to some embodiments is shown. Here, thepurge gas port 145 has threeenergy sources 310 positioned therein. Asingle controller 312 is shown, but each energy source can have a separate controller or all energy sources can be controlled by a single controller either in unison or independently. In the embodiment ofFIG. 10 , the three energy sources can be controlled so that the annealing energy projected from each source covers the same region of the susceptor assembly or different regions. For example, all three energy sources can be controlled so that their combined energy contacts the susceptor assembly at a single point that moves from the inner diameter region to the outer diameter region of the susceptor assembly. In another embodiment, each source moves independently so that each source directs energy to different regions of the susceptor assembly. The different regions can overlap or be separate. - The energy sources can be positioned within the
purge gas port 145 as shown in the Figures, or outside the purge gas port, as shown inFIG. 10 . To ensure that that there is no interaction between the process gases and the annealing energy, the energy source of some embodiments is positioned between thevacuum ports 155 positioned on either side of thepurge gas port 145. - In some embodiments, at least one
detector 330 is included in the system to sense or measure the temperature of one or more portions of the susceptor assembly or substrate. The detector can be any suitable type of detector including, but not limited to, pyrometers.FIG. 10 shows an embodiment with asingle detector 330 positioned within thepurge gas port 145 and asingle detector 330 positioned outside the purge gas port. To help ensure that deposition gases do not foul the detector, in some embodiments, the detector is positioned between thevacuum ports 155 on either side of thepurge gas port 145. - Some embodiments of the disclosure are directed to methods of processing a substrate. A substrate is placed into a processing chamber which has a plurality of sections, with each section separated from adjacent sections by a gas curtain. As used in this specification and the appended claims, the terms “section”, “region” and “sector” are used interchangeably to describe an area within a batch processing chamber. For example, the component shown in
FIG. 9 has two sections. Upon entering the processing chamber, the substrate (also called a wafer) can be in any of the individual sections. Each section can have the same or different processing conditions from the adjacent sections. As used in this specification and the appended claims, the term “processing condition” means the entirety of the conditions within the individual section. For example, processing conditions include, but are not limited to, gas composition, pressure, flow rate, temperature and plasma. Processing conditions can be configured to, for example, deposition, etching and treatment (e.g., densification, annealing). - In the first section, the substrate, or a portion of the substrate, is exposed to a first process condition to deposit a first film on the surface of the substrate. The substrate surface can be a bare substrate surface or any layer previously deposited on the surface. For example, the surface may have a mixed composition with one part being a metal and the other a dielectric. The individual surface composition can vary and should not be taken as limiting the scope of the invention.
- Any of the films deposited or formed can be a complete film, such as a metal or dielectric film, or can be a partial film as in the first half of a two-part reaction. An example of a partial film would be the chemisorption of a compound to a substrate surface that will later be decomposed by the energy source and annealing energy to produce the final film.
- Formation of the first film may be, for example, the deposition of a metal hydride onto the surface of the substrate (e.g., SiH4). After formation of the first film, the substrate is laterally moved through a gas curtain to a second section of the processing chamber. In the second section, the first film is exposed to second process conditions to form a second film. The second process condition of some embodiments comprises exposure to annealing energy from an energy source to decompose the first film. For example, silane deposited on the surface can be decomposed with a laser to form a silicon film.
- During the movement from the first section to the second section, the substrate is exposed to the first process conditions, the second process conditions and a gas curtain which separates the two. The gas curtain can be, for example, a combination of inert gases and vacuum to ensure that there is minimal, if any, gas phase reaction between the first process conditions and the second process conditions. At some time during the movement, part of the surface is exposed to the first process conditions, another part of the surface is exposed to the second process conditions and an intermediate portion, between the other two portions, of the substrate is exposed to the gas curtain.
- In some embodiments, the gas curtain includes the energy source which exposes the portion of the substrate within the gas curtain to the annealing energy. In an embodiment of this sort, the second process condition can be the same as the first process condition so that a thicker film can be deposited and annealed as the substrate rotates through the processing chamber.
- The exposure to the first process conditions and the second process conditions can be repeated sequentially to grow a film of desired thickness. For example, the batch processing chamber may contain two sections with the first process conditions and two sections of the second process conditions in alternating pattern, so that rotation of the substrate around the central axis of the processing chamber causes the surface to be sequentially and repeatedly exposed to the first and second process conditions so that each exposure causes the film thickness (for depositions) to grow.
- In some embodiments, one or more layers may be formed during a plasma enhanced atomic layer deposition (PEALD) process. In some processes, the use of plasma provides sufficient energy to promote a species into the excited state where surface reactions become favorable and likely. Introducing the plasma into the process can be continuous or pulsed. In some embodiments, sequential pulses of precursors (or reactive gases) and plasma are used to process a layer. In some embodiments, the reagents may be ionized either locally (i.e., within the processing area) or remotely (i.e., outside the processing area). In some embodiments, remote ionization can occur upstream of the deposition chamber such that ions or other energetic or light emitting species are not in direct contact with the depositing film. In some PEALD processes, the plasma is generated external from the processing chamber, such as by a remote plasma generator system. The plasma may be generated via any suitable plasma generation process or technique known to those skilled in the art. For example, plasma may be generated by one or more of a microwave (MW) frequency generator or a radio frequency (RF) generator. The frequency of the plasma may be tuned depending on the specific reactive species being used. Suitable frequencies include, but are not limited to, 2 MHz, 13.56 MHz, 40 MHz, 60 MHz and 100 MHz. Although plasmas may be used during the deposition processes disclosed herein plasmas may not be required. Indeed, other embodiments relate to deposition processes under very mild conditions without a plasma.
- According to one or more embodiments, the substrate is subjected to processing prior to and/or after forming the layer. This processing can be performed in the same chamber or in one or more separate processing chambers. In some embodiments, the substrate is moved from the first chamber to a separate, second chamber for further processing. The substrate can be moved directly from the first chamber to the separate processing chamber, or the substrate can be moved from the first chamber to one or more transfer chambers, and then moved to the desired separate processing chamber. Accordingly, the processing apparatus may comprise multiple chambers in communication with a transfer station. An apparatus of this sort may be referred to as a “cluster tool” or “clustered system”, and the like.
- Generally, a cluster tool is a modular system comprising multiple chambers which perform various functions including substrate center-finding and orientation, degassing, annealing, deposition and/or etching. According to one or more embodiments, a cluster tool includes at least a first chamber and a central transfer chamber. The central transfer chamber may house a robot that can shuttle substrates between and among processing chambers and load lock chambers. The transfer chamber is typically maintained at a vacuum condition and provides an intermediate stage for shuttling substrates from one chamber to another and/or to a load lock chamber positioned at a front end of the cluster tool. Two well-known cluster tools which may be adapted for the present invention are the Centura® and the Endura®, both available from Applied Materials, Inc., of Santa Clara, Calif. The details of one such staged-vacuum substrate processing apparatus is disclosed in U.S. Pat. No. 5,186,718, entitled “Staged-Vacuum Wafer Processing Apparatus and Method,” Tepman et al., issued on Feb. 16, 1993. However, the exact arrangement and combination of chambers may be altered for purposes of performing specific parts of a process as described herein. Other processing chambers which may be used include, but are not limited to, cyclical layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etch, pre-clean, chemical clean, thermal treatment such as RTP, plasma nitridation, degas, orientation, hydroxylation and other substrate processes. By carrying out processes in a chamber on a cluster tool, surface contamination of the substrate with atmospheric impurities can be avoided without oxidation prior to depositing a subsequent film.
- According to one or more embodiments, the substrate is continuously under vacuum or “load lock” conditions, and is not exposed to ambient air when being moved from one chamber to the next. The transfer chambers are thus under vacuum and are “pumped down” under vacuum pressure. Inert gases may be present in the processing chambers or the transfer chambers. In some embodiments, an inert gas is used as a purge gas to remove some or all of the reactants after forming the layer on the surface of the substrate. According to one or more embodiments, a purge gas is injected at the exit of the deposition chamber to prevent reactants from moving from the deposition chamber to the transfer chamber and/or additional processing chamber. Thus, the flow of inert gas forms a curtain at the exit of the chamber.
- During processing, the substrate can be heated or cooled. Such heating or cooling can be accomplished by any suitable means including, but not limited to, changing the temperature of the substrate support (e.g., susceptor) and flowing heated or cooled gases to the substrate surface. In some embodiments, the substrate support includes a heater/cooler which can be controlled to change the substrate temperature conductively. In one or more embodiments, the gases (either reactive gases or inert gases) being employed are heated or cooled to locally change the substrate temperature. In some embodiments, a heater/cooler is positioned within the chamber adjacent the substrate surface to convectively change the substrate temperature.
- The substrate can also be stationary or rotated during processing. A rotating substrate can be rotated continuously or in discreet steps. For example, a substrate may be rotated throughout the entire process, or the substrate can be rotated by a small amount between exposure to different reactive or purge gases. Rotating the substrate during processing (either continuously or in steps) may help produce a more uniform deposition or etch by minimizing the effect of, for example, local variability in gas flow geometries.
- While the foregoing is directed to embodiments of the present invention, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (20)
1. A processing chamber comprising:
a generally circular gas distribution assembly comprising a plurality of elongate gas ports in a front face of the gas distribution assembly, the plurality of elongate gas ports extending from an inner diameter region to an outer diameter region of the gas distribution assembly, the plurality of gas ports comprising at least one first reactive gas port to deliver a first reactive gas to the processing chamber, a purge gas port to deliver a purge gas to the processing chamber and a vacuum port to evacuate gases from the processing chamber, the vacuum port positioned between the first reactive gas port and the purge gas port;
a generally circular susceptor assembly to rotate at least one substrate in a substantially circular path about a rotational axis, the susceptor assembly positioned below the gas distribution assembly so that a top surface of the susceptor assembly is substantially parallel to the front face of the gas distribution assembly, the susceptor assembly having an inner diameter region and an outer diameter region; and
at least one energy source oriented to direct annealing energy toward the top surface of the susceptor assembly.
2. The processing chamber of claim 1 , wherein the energy source is positioned within the purge gas port.
3. The processing chamber of claim 1 , further comprising at least one actuator to move the energy source so that the annealing energy is moved in a direction perpendicular to the rotational axis of the susceptor assembly.
4. The processing chamber of claim 3 , further comprising a controller to control the actuator.
5. The processing chamber of claim 4 , wherein the controller reciprocally moves the annealing energy from the inner diameter region to the outer diameter region of the susceptor assembly in a substantially straight path.
6. The processing chamber of claim 5 , wherein the controller moves the annealing energy at a substantially uniform rate.
7. The processing chamber of claim 6 , further comprising a variable focus lens to focus the annealing energy on the susceptor assembly so that the annealing energy has a size at the inner diameter region that is smaller than the size at the outer diameter region.
8. The processing chamber of claim 5 , wherein the controller moves the energy source so that the annealing energy moves slower at the outer diameter region than the inner diameter region.
9. The processing chamber of claim 8 , wherein during rotation of the susceptor assembly, the annealing energy has a substantially uniform residence time from the inner diameter region to the outer diameter region.
10. The processing chamber of claim 1 , wherein the energy source comprises a laser.
11. The processing chamber of claim 1 , wherein there is a plurality of energy sources positioned within the purge gas port.
12. The processing chamber of claim 1 , further comprising at least one detector to sense temperature of one or more portions of the substrate.
13. The processing chamber of claim 12 , wherein the detector is positioned within the purge gas port.
14. The processing chamber of claim 1 , further comprising a second vacuum port positioned on an opposite side of the purge gas port from the vacuum port and the energy source is positioned in a region after the second vacuum port.
15. A processing chamber comprising:
a generally circular gas distribution assembly comprising a plurality of elongate gas ports in a front face of the gas distribution assembly, the plurality of elongate gas ports extending from an inner diameter region to an outer diameter region of the gas distribution assembly, the plurality of gas ports comprising, in order, a first reactive gas port to deliver a first reactive gas to the processing chamber, a first vacuum port to evacuate gases from the processing chamber, a purge gas port to deliver a purge gas to the processing chamber and a second vacuum port to evacuate gases from the processing chamber;
a generally circular susceptor assembly to rotate at least one substrate in a substantially circular path about a rotational axis, the susceptor assembly positioned below the gas distribution assembly so that a top surface of the susceptor assembly is substantially parallel to the front face of the gas distribution assembly, the susceptor assembly having an inner diameter region and an outer diameter region; and
at least one energy source positioned between the first vacuum port and the second vacuum port and oriented to direct annealing energy toward the top surface of the susceptor assembly, the annealing energy movable in a direction from the inner diameter region to the outer diameter region of the susceptor assembly.
16. A processing method comprising:
positioning a substrate on a rotatable susceptor assembly in a processing chamber;
laterally moving the substrate around a central axis to move the substrate beneath a first reactive gas port of a gas distribution assembly, the first reactive gas port providing a first reactive gas to the processing chamber;
exposing the substrate to a first process condition comprising the first reactive gas to form a partial film on the substrate surface;
laterally moving the substrate around the central axis through at least one vacuum region defining a boundary of the first process condition, the gas distribution assembly having in the vacuum region a vacuum port to evacuate gases from the processing chamber; and
exposing the substrate surface to annealing energy to convert the partial film to a film.
17. The processing method of claim 16 , wherein the substrate is moved from the first process condition through the vacuum region, a purge gas region and second vacuum region into a second process condition.
18. The processing method of claim 17 , wherein the substrate is exposed to the annealing energy in the purge gas region.
19. The processing method of claim 17 , wherein the substrate is exposed to the annealing energy in the second process condition.
20. The processing method of claim 17 , wherein the vacuum region, purge gas region and second vacuum region have a width less than the diameter of the substrate so that during lateral movement the substrate can be exposed to at least two of the first process condition, vacuum region, purge gas region or the second vacuum region.
Priority Applications (4)
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US14/666,689 US20150275364A1 (en) | 2014-03-27 | 2015-03-24 | Cyclic Spike Anneal Chemical Exposure For Low Thermal Budget Processing |
PCT/US2015/022387 WO2015148605A1 (en) | 2014-03-27 | 2015-03-25 | Cyclic spike anneal chemical exposure for low thermal budget processing |
KR1020217038576A KR102396802B1 (en) | 2014-03-27 | 2015-03-25 | Cyclic spike anneal chemical exposure for low thermal budget processing |
KR1020167030027A KR20160138246A (en) | 2014-03-27 | 2015-03-25 | Cyclic spike anneal chemical exposure for low thermal budget processing |
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US201461971256P | 2014-03-27 | 2014-03-27 | |
US14/666,689 US20150275364A1 (en) | 2014-03-27 | 2015-03-24 | Cyclic Spike Anneal Chemical Exposure For Low Thermal Budget Processing |
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US20150275364A1 true US20150275364A1 (en) | 2015-10-01 |
Family
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Application Number | Title | Priority Date | Filing Date |
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US14/666,689 Abandoned US20150275364A1 (en) | 2014-03-27 | 2015-03-24 | Cyclic Spike Anneal Chemical Exposure For Low Thermal Budget Processing |
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Country | Link |
---|---|
US (1) | US20150275364A1 (en) |
KR (2) | KR102396802B1 (en) |
TW (1) | TW201610215A (en) |
WO (1) | WO2015148605A1 (en) |
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Also Published As
Publication number | Publication date |
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WO2015148605A1 (en) | 2015-10-01 |
TW201610215A (en) | 2016-03-16 |
KR20210148402A (en) | 2021-12-07 |
KR20160138246A (en) | 2016-12-02 |
KR102396802B1 (en) | 2022-05-10 |
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