US20150099370A1 - Chemical Circulation System and Methods of Cleaning Chemicals - Google Patents

Chemical Circulation System and Methods of Cleaning Chemicals Download PDF

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US20150099370A1
US20150099370A1 US14/050,014 US201314050014A US2015099370A1 US 20150099370 A1 US20150099370 A1 US 20150099370A1 US 201314050014 A US201314050014 A US 201314050014A US 2015099370 A1 US2015099370 A1 US 2015099370A1
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metal
ion
chemical solution
absorber
ion absorber
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US9337055B2 (en
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Chien-Hua Huang
Chung-Ju Lee
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Definitions

  • wet etching is a commonly used method in the manufacturing of integrated circuits.
  • titanium nitride is commonly used to form hard masks, which are used to define the patterns of trenches and via openings, in which copper is filled to form metal lines and vias.
  • hard masks need to be patterned first, so that their patterns may be transferred to the underlying dielectric layers.
  • CMP Chemical Mechanical Polish
  • the removal of titanium nitride may be performed using a wet etch (wet clean) process, during which a chemical solution is used to etch the titanium nitride (TiN).
  • a wet etch wet clean
  • the drain-mode wet-clean circulation system results in more waste since the wet-clean chemical is not reused. The manufacturing cost is also high due to the cost of the wet-clean chemical.
  • the second type of wet-clean circulation system is known as the circulation-mode system.
  • the wet-clean chemical is pumped into a tank for storage. From the storage, the wet-clean chemical is passed through a particle-filter for filtering large particles. The wet-clean chemical is then heated, and then conducted to a process chamber, in which wafers are sprayed with the wet-clean chemical in order to remove the hard mask. The sprayed wet-clean chemical, which has been used, is then collected, and pumped back to the storage, so that it can be filtered, heated, and sent back to the process chamber again.
  • the circulation-mode wet-clean circulation system the waste of the wet-clean chemical is reduced.
  • the dissolved titanium ions remain in the wet-clean chemical, and remain in the circulation system and the pipelines.
  • the clean efficiency and the TiN removal rate in the wet clean process are reduced.
  • the efficiency in the removal of the titanium nitride has variations accordingly, causing variations in the resulting hard mask clean and removal process.
  • FIG. 1 illustrates a circulation-mode wet-clean circulation system in accordance with some embodiments
  • FIG. 2 illustrates a porous exchanger in accordance with some embodiments, wherein the porous exchanger is disposed in a metal-ion absorber in the circulation-mode wet-clean circulation system;
  • FIG. 3 illustrates an exemplary process for rejuvenizing the porous exchanger in accordance with some embodiments.
  • FIG. 4 illustrates an exemplary process for rejuvenizing the porous exchanger in a first channel of a dual-channel metal-ion absorber in accordance with some embodiments.
  • FIG. 5 illustrates an exemplary process for rejuvenizing the porous exchanger in a second channel of the dual-channel metal-ion absorber in accordance with some embodiments.
  • a method for absorbing metal ions in wet-etch chemicals and the apparatus for performing the same are provided in accordance with various exemplary embodiments.
  • the intermediate stages of absorbing the metal ions are illustrated.
  • the variations of the embodiments are discussed.
  • like reference numbers are used to designate like elements.
  • FIG. 1 illustrates circulation-mode wet-clean circulation system 10 , which is configured to absorb metal ions in wet-clean chemical 18 , which is a chemical solution.
  • Wet-clean circulation system 10 includes pump 12 , which functions to pump wet-clean chemical 18 to storage 16 .
  • wet-clean chemical includes polyethylene-polypropylene glycol, glycolether compound, modified oxirane polymer (such as methyl-), organosulfur compound, methylimidazole, aminoethanol, aminopropanol, hydroxyamine, tetramethylammonium hydroxide, hydrophobic or hydrophilic surfactant, hydrogen peroxide, or combinations thereof.
  • Pipes are used to connect the components shown in FIG. 1 , wherein reference numeral 19 represents the pipes for conducting wet-clean chemical 18 .
  • Pump 12 may receive from inlet 14 unused wet-clean chemical 18 .
  • wet-clean chemical 18 may be referred to with a letter such as “A,” “B,” and “C” suffixed to the reference numeral 18 , so that wet-clean chemical 18 in different stages of wet-clean circulation system 10 may be distinguished from each other.
  • Wet-clean chemical 18 is stored in storage 16 before it is used.
  • Filter 20 is connected to storage 16 to receive wet-clean chemical 18 .
  • Filter 20 is configured to filter the particles in wet-clean chemical 18 .
  • filter 20 is configured to filter the particles that are larger than about 15 nm, while the particles that are smaller than about 15 nm are not filtered.
  • wet-clean chemical 18 may still include the particles that have sizes smaller than about 15 nm.
  • metal ions have size smaller than about 15 nm, and hence are not filtered by filter 20 .
  • Metal-ion absorber 22 is connected to filter 20 in order to receive the wet-clean chemical 18 that have been filtered by filter 20 .
  • FIG. 2 schematically illustrates porous exchanger 24 , which is a part of metal-ion absorber 22 . The casing outside of the illustrated porous exchanger 24 is not illustrated. Porous exchanger 24 has the function of trapping the metal ions in wet-clean chemical 18 when wet-clean chemical 18 penetrates through the pores of porous exchanger 24 . In some embodiments, porous exchanger 24 is a film, as illustrated in FIG. 2 .
  • porous exchanger 24 includes surface 24 A facing the incoming wet-clean chemical 18 A, which penetrates through the pores in porous exchanger 24 , and exits out of porous exchanger 24 from surface 24 B.
  • the exiting wet-clean chemical 18 is denoted as 18 B to indicate that the metal ions in wet-clean chemical 18 A have been trapped by porous exchanger 24 .
  • thickness T of porous exchanger 24 is in the range between about 0.0001 mm and about 10 mm. It is appreciated, however, that the values recited throughout the descriptions are merely examples, and may be changed to different values.
  • porous exchanger 24 includes a base material that is porous and includes many micro-pores, which are interconnected to extend from surface 24 A to surface 24 B.
  • the base material includes porous ceramic.
  • the base material includes a carbon-containing or a silica-containing material that is porous.
  • the base material thus has a structure similar to a sponge.
  • the porosity of the base material may be in the range between about 10 percent and about 60 percent. Accordingly, the surfaces of the base material, which surfaces includes the inner surfaces in the pores, are much larger than the surface of porous exchanger 24 facing wet-clean chemical 18 .
  • porous exchanger 24 are coated with a polymer, which may be a resin.
  • the polymer is coated into the pores, so that the surface of the polymer that may contact wet-clean chemical 18 is significantly increased.
  • the polymer has the function of trapping the metal ions, which may include titanium, copper, cobalt, or the like. Depending on the metal ions that are to be absorbed, the polymer may be selected differently.
  • the polymer includes functional groups such as cation (R—H), anion (R—OH), amphoteric (R—H+R—OH), or the like.
  • the exemplary polymer includes cross-linked polystyrene, modified zeolite, colestipol, cholestyramine, epoxy, or the like.
  • Porous exchanger 24 may also include activated carbon coated on the base material.
  • Porous exchanger 24 traps the metal ions, and hence removes the metal ions from wet-clean chemical 18 A when it passes through porous exchanger 24 . Equations 1, 2, and 3 illustrate some exemplary chemical reactions for trapping the metal ions:
  • M 2+ represents divalent metal ions such as copper ions and titanium ions
  • M 3+ represents trivalent metals such as aluminum ions and titanium ions
  • M 4+ represents tetravalent metal ions.
  • R represents the function groups in the polymer. The metal ions react with the polymer to form the R-M (with M being the metal), and hence the metal ions are trapped.
  • the resulting wet-clean chemical 18 B ( FIGS. 1 and 2 ) has much less metal ions than in wet-clean chemical 18 A.
  • the metal ion concentration in wet-clean chemical 18 B is less than about 0.1 percent the metal ion concentration in wet-clean chemical 18 A.
  • the metal ion concentration in wet-clean chemical 18 B may be lower than about 1000 ppm in accordance with some embodiments.
  • the metal ion concentration in wet-clean chemical 18 B is monitored by monitor 26 , which performs in-line monitoring when wet-clean chemical 18 B passes through.
  • the monitoring method may include Fourier Transform Infrared (FTIR) spectroscopy, Ultra-Violet (UV) visible spectroscopy, Near Infrared (NIR) spectroscopy, or the like.
  • FTIR Fourier Transform Infrared
  • UV Ultra-Violet
  • NIR Near Infrared
  • wet-clean chemical 18 B is heated by heater 28 , for example, to a temperature between about 30° C. and about 65° C.
  • the heated wet-clean chemical 18 B is then supplied to process chamber 30 , in which a process is performed on wafer 32 .
  • the process includes removing a metal containing region that contains the same type of metal that is trapped by metal-ion absorber 22 .
  • wafer 32 includes a hard mask that includes titanium nitride.
  • circulation-mode wet-clean circulation system 10 includes forming a metal hard mask (not shown) over wafer 32 , patterning the metal hard mask, using the patterned metal hard mask to etch an underlying dielectric layer to form trenches or via openings, and removing the hard mask using wet-clean circulation system 10 .
  • a seed layer (not shown) is deposited on wafer 32 , followed by a plating process to fill the trenches and vias openings with a metallic material such as copper.
  • a Chemical Mechanical Polish (CMP) is then performed. The resulting metallic material in the trenches and the via openings form metal lines and vias, respectively.
  • CMP Chemical Mechanical Polish
  • wet-clean chemical 18 C The metal ions in metal hard mask is dissolved in wet-clean chemical 18 B, and the resulting wet-clean chemical 18 including the metal ions is referred to as wet-clean chemical 18 C.
  • Wet-clean chemical 18 C is collected from process chamber 30 . If it is determined that the quality of wet-clean chemical 18 C is high enough, and wet-clean chemical 18 C is re-usable, it is sent to pump 12 , and then pumped back to storage 16 . If it is determined that wet-clean chemical 18 C cannot be reused anymore, wet-clean chemical 18 C is drained (represented by arrow 34 ) as a waste chemical. As shown in FIG. 1 , storage 16 , filter 20 , monitor 26 , heater 28 , and process chamber 30 are connected as a loop.
  • wet-clean chemical 18 C is eventually drained, fresh wet-clean chemical 18 , which may be free from the metal ions, is replenished into wet-clean circulation system 10 from time to time in order to maintain an adequate amount of wet-clean chemical 18 .
  • porous exchanger 24 When it is determined that porous exchanger 24 ( FIG. 2 ) has trapped enough metal ions to a degree that its metal-trapping ability needs to be improved, porous exchanger 24 is rejuvenized. The determination may be achieved by monitoring the metal ions in wet-clean chemical 18 B that comes out of porous exchanger 24 . Alternatively, porous exchanger 24 may be rejuvenized periodically. For example, if the metal ion concentration in wet-clean chemical 18 B is higher than a threshold level, then porous exchanger 24 needs to be rejuvenized.
  • FIG. 3 illustrates an exemplary process for rejuvenizing porous exchanger 24 . First, the introduction of wet-clean chemical 18 A into metal-ion absorber 22 is stopped.
  • Rejuvenizing chemical 36 is then introduced into porous exchanger 24 to remove metal ions from porous exchanger 24 .
  • rejuvenizing chemical 36 may pass through the pores in porous exchanger 24 , so that rejuvenizing chemical 36 is in contact with the polymer and the trapped metal ions.
  • the available rejuvenizing chemicals 36 include solvents and gases.
  • the exemplary rejuvenizing chemicals 36 include a base or an acid, and porous exchanger 24 is flushed using the exemplary rejuvenizing chemicals 36 .
  • the rejuvenizing process may include a thermal desorption, wherein a hot solvent is used to remove the metal ions.
  • the hot solvent includes sulfuric acid, phosphate acid, sodium hydroxide, or the like.
  • hydrogen (H 2 ) may be used to remove the metal ions from the polymer in porous exchanger 24 .
  • the polymer is restored back to the form R—H, R—OH, or the like, wherein the metal ions (M 2+ , M 3+ , and/or M 4+ , refer to Equations 1 through 3) that are connected to the functional groups R in the polymers are replaced by hydrogen (H) or hydroxide (OH).
  • the metal ions are removed from metal-ion absorber 22 along with the used rejuvenizing chemicals 36 , which is denoted as 38 in FIG. 3 .
  • the rejuvenizing process may be performed inside metal-ion absorber 22 .
  • porous exchanger 24 is taken outside of metal-ion absorber 22 to perform the rejuvenizing process.
  • FIGS. 1 and 3 illustrate single-channel wet-clean circulation system 10 in accordance with some embodiments.
  • wet-clean circulation system 10 include multiple channels, which may be include two channels, three channels, four channels, or more than four channels.
  • the multi-channel wet-clean circulation system 10 may work under a switch mode, wherein the multiple channels may be switched on and off, so that one of the channels is always turned on to trap the metal ions.
  • FIGS. 4 and 5 illustrate the operation of an exemplary switch-mode dual-channel wet-clean circulation system 10 . Referring to FIG. 4 , two channels are connected to filter 20 through switch 40 .
  • the first channel includes metal-ion absorber 22 A and the corresponding pipes.
  • the second channel includes metal-ion absorber 22 B and the corresponding pipes.
  • Each of metal-ion absorbers 22 A and 22 B may have a structure essentially the same as metal-ion absorber 22 in FIG. 1 .
  • Switch 40 is configured to turn on one of the first channel 42 and second channel 44 , so that the corresponding metal-ion absorber 22 A or 22 B receives wet-clean chemical 18 .
  • the other channel is turned off by switch 40 , as shown by the “x” marks.
  • the first channel 42 is turned on, and hence metal-ion absorber 22 A is used to trap the metal ions in wet-clean chemical 18 A.
  • the porous exchanger 24 in the second channel may be rejuvenized at this time by conducting rejuvenizing chemicals 36 into metal-ion absorber 22 B.
  • the used rejuvenizing chemical 38 is also drained.
  • the second channel 44 is turned on, and hence metal-ion absorber 22 B is used to trap the metal ions in wet-clean chemical 18 A.
  • the first channel 42 is turned off, as shown by the “x” marks.
  • the porous exchanger 24 in the first channel 42 is rejuvenized. Accordingly, by switching the multi-channels, there is always one channel that is on-line for processing wet-clean chemical 18 A. The down time of the respective wet-clean circulation system 10 is minimized.
  • the metal ions in the wet-clean chemical are removed, and hence the lifetime of the wet-clean chemical is extended.
  • the loading of the wet-clean chemical is improved, and the wet clean process in accordance with the embodiments is more stable.
  • the manufacturing cost of the respective integrated manufacturing process is reduced due to the saving in the wet-clean chemical.
  • the chemical waste is also reduced.
  • a method includes passing a chemical solution through a metal-ion absorber, wherein metal ions in the metal-ion absorber are trapped by the metal-ion absorber.
  • the chemical solution exiting out of the metal-ion absorber is then used to etch a metal-containing region, wherein the metal-containing region includes a metal that is of a same element type as the metal ions.
  • a chemical solution is passed through a metal-ion absorber.
  • the titanium ions in the chemical solution are trapped by the metal-ion absorber when the chemical solution is passed through the metal-ion absorber.
  • a hard mask in a semiconductor wafer is etched using the chemical solution that flows out of the metal-ion absorber, wherein the hard mask comprises titanium.
  • the chemical solution is collected after the chemical solution is used to etch the hard mask.
  • the chemical solution that is used to etch the hard mask is conducted back to the metal-ion absorber.
  • an apparatus in accordance with yet other embodiments, includes a metal-ion absorber configured to absorb metal ions in a chemical solution, and a process chamber connected to the metal-ion absorber through a pipe.
  • the pipe is configured to conduct the chemical solution from the metal-ion absorber to the process chamber.
  • the process chamber is configured to perform an etching on a hard mask in a wafer.
  • a conduction path connects the process chamber back to the metal-ion absorber, wherein the conduction path is configured to conduct the chemical solution back to the metal-ion absorber.

Abstract

A method includes passing a chemical solution through a metal-ion absorber, wherein metal ions in the metal-ion absorber are trapped by the metal-ion absorber. The chemical solution exiting out of the metal-ion absorber is then used to etch a metal-containing region, wherein the metal-containing region includes a metal that is of a same element type as the metal ions.

Description

    BACKGROUND
  • Wet etching is a commonly used method in the manufacturing of integrated circuits. For example, in damascene processes, titanium nitride is commonly used to form hard masks, which are used to define the patterns of trenches and via openings, in which copper is filled to form metal lines and vias. Hence, hard masks need to be patterned first, so that their patterns may be transferred to the underlying dielectric layers. Traditionally, after the formation of the metal lines and vias, the hard masks are removed by a Chemical Mechanical Polish (CMP) process.
  • The removal of titanium nitride may be performed using a wet etch (wet clean) process, during which a chemical solution is used to etch the titanium nitride (TiN). Conventionally, there were two types of wet-clean circulation system. The first is known as the drain-mode system. In the drain-mode system, the wet-clean chemical is pumped into a tank for storage. From the storage, the wet-clean chemical is passed through a particle-filter for filtering large particles. The wet-clean chemical is then heated, and then sent to a process chamber, in which wafers are sprayed with the wet-clean chemical in order to remove the hard mask. The drain-mode wet-clean circulation system results in more waste since the wet-clean chemical is not reused. The manufacturing cost is also high due to the cost of the wet-clean chemical.
  • The second type of wet-clean circulation system is known as the circulation-mode system. In the circulation-mode system, the wet-clean chemical is pumped into a tank for storage. From the storage, the wet-clean chemical is passed through a particle-filter for filtering large particles. The wet-clean chemical is then heated, and then conducted to a process chamber, in which wafers are sprayed with the wet-clean chemical in order to remove the hard mask. The sprayed wet-clean chemical, which has been used, is then collected, and pumped back to the storage, so that it can be filtered, heated, and sent back to the process chamber again. By using the circulation-mode wet-clean circulation system, the waste of the wet-clean chemical is reduced. However, the dissolved titanium ions remain in the wet-clean chemical, and remain in the circulation system and the pipelines. With the increase in the amount of titanium ions in the wet-clean chemical, the clean efficiency and the TiN removal rate in the wet clean process are reduced. Furthermore, due to the variation in the amount of titanium ions in the wet-clean chemical, the efficiency in the removal of the titanium nitride has variations accordingly, causing variations in the resulting hard mask clean and removal process.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • For a more complete understanding of the embodiments, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
  • FIG. 1 illustrates a circulation-mode wet-clean circulation system in accordance with some embodiments;
  • FIG. 2 illustrates a porous exchanger in accordance with some embodiments, wherein the porous exchanger is disposed in a metal-ion absorber in the circulation-mode wet-clean circulation system;
  • FIG. 3 illustrates an exemplary process for rejuvenizing the porous exchanger in accordance with some embodiments; and
  • FIG. 4 illustrates an exemplary process for rejuvenizing the porous exchanger in a first channel of a dual-channel metal-ion absorber in accordance with some embodiments; and
  • FIG. 5 illustrates an exemplary process for rejuvenizing the porous exchanger in a second channel of the dual-channel metal-ion absorber in accordance with some embodiments.
    •  DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
  • The making and using of the embodiments of the disclosure are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are illustrative, and do not limit the scope of the disclosure.
  • A method for absorbing metal ions in wet-etch chemicals and the apparatus for performing the same are provided in accordance with various exemplary embodiments. The intermediate stages of absorbing the metal ions are illustrated. The variations of the embodiments are discussed. Throughout the various views and illustrative embodiments, like reference numbers are used to designate like elements.
  • FIG. 1 illustrates circulation-mode wet-clean circulation system 10, which is configured to absorb metal ions in wet-clean chemical 18, which is a chemical solution. Wet-clean circulation system 10 includes pump 12, which functions to pump wet-clean chemical 18 to storage 16. In some embodiment, wet-clean chemical includes polyethylene-polypropylene glycol, glycolether compound, modified oxirane polymer (such as methyl-), organosulfur compound, methylimidazole, aminoethanol, aminopropanol, hydroxyamine, tetramethylammonium hydroxide, hydrophobic or hydrophilic surfactant, hydrogen peroxide, or combinations thereof. Pipes are used to connect the components shown in FIG. 1, wherein reference numeral 19 represents the pipes for conducting wet-clean chemical 18.
  • Pump 12 may receive from inlet 14 unused wet-clean chemical 18. Throughout the description, the wet-clean chemical 18 may be referred to with a letter such as “A,” “B,” and “C” suffixed to the reference numeral 18, so that wet-clean chemical 18 in different stages of wet-clean circulation system 10 may be distinguished from each other. Wet-clean chemical 18 is stored in storage 16 before it is used.
  • Filter 20 is connected to storage 16 to receive wet-clean chemical 18. Filter 20 is configured to filter the particles in wet-clean chemical 18. In some embodiments, filter 20 is configured to filter the particles that are larger than about 15 nm, while the particles that are smaller than about 15 nm are not filtered. Hence, after passing filter 20, wet-clean chemical 18 may still include the particles that have sizes smaller than about 15 nm. Furthermore, metal ions have size smaller than about 15 nm, and hence are not filtered by filter 20.
  • Metal-ion absorber 22 is connected to filter 20 in order to receive the wet-clean chemical 18 that have been filtered by filter 20. FIG. 2 schematically illustrates porous exchanger 24, which is a part of metal-ion absorber 22. The casing outside of the illustrated porous exchanger 24 is not illustrated. Porous exchanger 24 has the function of trapping the metal ions in wet-clean chemical 18 when wet-clean chemical 18 penetrates through the pores of porous exchanger 24. In some embodiments, porous exchanger 24 is a film, as illustrated in FIG. 2.
  • In some embodiments, porous exchanger 24 includes surface 24A facing the incoming wet-clean chemical 18A, which penetrates through the pores in porous exchanger 24, and exits out of porous exchanger 24 from surface 24B. The exiting wet-clean chemical 18 is denoted as 18B to indicate that the metal ions in wet-clean chemical 18A have been trapped by porous exchanger 24. In accordance with some embodiments, thickness T of porous exchanger 24 is in the range between about 0.0001 mm and about 10 mm. It is appreciated, however, that the values recited throughout the descriptions are merely examples, and may be changed to different values.
  • In accordance with some embodiments, porous exchanger 24 includes a base material that is porous and includes many micro-pores, which are interconnected to extend from surface 24A to surface 24B. In accordance with some embodiment, the base material includes porous ceramic. In alternative embodiments, the base material includes a carbon-containing or a silica-containing material that is porous. The base material thus has a structure similar to a sponge. The porosity of the base material may be in the range between about 10 percent and about 60 percent. Accordingly, the surfaces of the base material, which surfaces includes the inner surfaces in the pores, are much larger than the surface of porous exchanger 24 facing wet-clean chemical 18.
  • The surfaces of porous exchanger 24 are coated with a polymer, which may be a resin. The polymer is coated into the pores, so that the surface of the polymer that may contact wet-clean chemical 18 is significantly increased. The polymer has the function of trapping the metal ions, which may include titanium, copper, cobalt, or the like. Depending on the metal ions that are to be absorbed, the polymer may be selected differently. In the exemplary embodiments in which titanium ions present in wet-chemical 18A, the polymer includes functional groups such as cation (R—H), anion (R—OH), amphoteric (R—H+R—OH), or the like. The exemplary polymer includes cross-linked polystyrene, modified zeolite, colestipol, cholestyramine, epoxy, or the like. Porous exchanger 24 may also include activated carbon coated on the base material.
  • Porous exchanger 24 traps the metal ions, and hence removes the metal ions from wet-clean chemical 18A when it passes through porous exchanger 24. Equations 1, 2, and 3 illustrate some exemplary chemical reactions for trapping the metal ions:

  • R-H+M2+→R-M+2H+  [Eq. 1]

  • R-H+M3+→R-M+3H+  [Eq. 2]

  • R-H+M4+→R-M+4H+  [Eq. 3]
  • Wherein M2+ represents divalent metal ions such as copper ions and titanium ions, M3+ represents trivalent metals such as aluminum ions and titanium ions, and M4+ represents tetravalent metal ions. R represents the function groups in the polymer. The metal ions react with the polymer to form the R-M (with M being the metal), and hence the metal ions are trapped.
  • The resulting wet-clean chemical 18B (FIGS. 1 and 2) has much less metal ions than in wet-clean chemical 18A. In some embodiments, the metal ion concentration in wet-clean chemical 18B is less than about 0.1 percent the metal ion concentration in wet-clean chemical 18A. Furthermore, the metal ion concentration in wet-clean chemical 18B may be lower than about 1000 ppm in accordance with some embodiments.
  • Referring back to FIG. 1, the metal ion concentration in wet-clean chemical 18B is monitored by monitor 26, which performs in-line monitoring when wet-clean chemical 18B passes through. The monitoring method may include Fourier Transform Infrared (FTIR) spectroscopy, Ultra-Violet (UV) visible spectroscopy, Near Infrared (NIR) spectroscopy, or the like. It is appreciated that with the increase in the trapped metal ions in porous exchanger 24, porous exchanger 24's ability for trapping metal ions reduces. Therefore, it needs to be determined when porous exchanger 24 needs to be replaced or rejuvenized, or when the wet-clean chemical 18 needs to be replaced.
  • Next, as also shown in FIG. 1, wet-clean chemical 18B is heated by heater 28, for example, to a temperature between about 30° C. and about 65° C. The heated wet-clean chemical 18B is then supplied to process chamber 30, in which a process is performed on wafer 32. In some embodiments, the process includes removing a metal containing region that contains the same type of metal that is trapped by metal-ion absorber 22. In some exemplary embodiments, wafer 32 includes a hard mask that includes titanium nitride.
  • An exemplary process that involves the using of circulation-mode wet-clean circulation system 10 is briefly described below. It is appreciated, however, that circulation-mode wet-clean circulation system 10 may also be used in other processes other than described. The exemplary process includes forming a metal hard mask (not shown) over wafer 32, patterning the metal hard mask, using the patterned metal hard mask to etch an underlying dielectric layer to form trenches or via openings, and removing the hard mask using wet-clean circulation system 10. In subsequent processes, a seed layer (not shown) is deposited on wafer 32, followed by a plating process to fill the trenches and vias openings with a metallic material such as copper. A Chemical Mechanical Polish (CMP) is then performed. The resulting metallic material in the trenches and the via openings form metal lines and vias, respectively.
  • The metal ions in metal hard mask is dissolved in wet-clean chemical 18B, and the resulting wet-clean chemical 18 including the metal ions is referred to as wet-clean chemical 18C. Wet-clean chemical 18C is collected from process chamber 30. If it is determined that the quality of wet-clean chemical 18C is high enough, and wet-clean chemical 18C is re-usable, it is sent to pump 12, and then pumped back to storage 16. If it is determined that wet-clean chemical 18C cannot be reused anymore, wet-clean chemical 18C is drained (represented by arrow 34) as a waste chemical. As shown in FIG. 1, storage 16, filter 20, monitor 26, heater 28, and process chamber 30 are connected as a loop.
  • Since wet-clean chemical 18C is eventually drained, fresh wet-clean chemical 18, which may be free from the metal ions, is replenished into wet-clean circulation system 10 from time to time in order to maintain an adequate amount of wet-clean chemical 18.
  • When it is determined that porous exchanger 24 (FIG. 2) has trapped enough metal ions to a degree that its metal-trapping ability needs to be improved, porous exchanger 24 is rejuvenized. The determination may be achieved by monitoring the metal ions in wet-clean chemical 18B that comes out of porous exchanger 24. Alternatively, porous exchanger 24 may be rejuvenized periodically. For example, if the metal ion concentration in wet-clean chemical 18B is higher than a threshold level, then porous exchanger 24 needs to be rejuvenized. FIG. 3 illustrates an exemplary process for rejuvenizing porous exchanger 24. First, the introduction of wet-clean chemical 18A into metal-ion absorber 22 is stopped. Rejuvenizing chemical 36 is then introduced into porous exchanger 24 to remove metal ions from porous exchanger 24. During the rejuvenizing process, rejuvenizing chemical 36 may pass through the pores in porous exchanger 24, so that rejuvenizing chemical 36 is in contact with the polymer and the trapped metal ions.
  • The available rejuvenizing chemicals 36 include solvents and gases. For example, the exemplary rejuvenizing chemicals 36 include a base or an acid, and porous exchanger 24 is flushed using the exemplary rejuvenizing chemicals 36. Alternatively, the rejuvenizing process may include a thermal desorption, wherein a hot solvent is used to remove the metal ions. In some embodiments, the hot solvent includes sulfuric acid, phosphate acid, sodium hydroxide, or the like. In yet alternative embodiments, hydrogen (H2) may be used to remove the metal ions from the polymer in porous exchanger 24. In some embodiments, after the rejuvenizing process, the polymer is restored back to the form R—H, R—OH, or the like, wherein the metal ions (M2+, M3+, and/or M4+, refer to Equations 1 through 3) that are connected to the functional groups R in the polymers are replaced by hydrogen (H) or hydroxide (OH). The metal ions are removed from metal-ion absorber 22 along with the used rejuvenizing chemicals 36, which is denoted as 38 in FIG. 3.
  • The rejuvenizing process may be performed inside metal-ion absorber 22. Alternatively, porous exchanger 24 is taken outside of metal-ion absorber 22 to perform the rejuvenizing process. After the rejuvenizing process, the flow of wet-clean chemical 18 is restored, and wet-clean circulation system 10 re-operates.
  • FIGS. 1 and 3 illustrate single-channel wet-clean circulation system 10 in accordance with some embodiments. In alternative embodiments, wet-clean circulation system 10 include multiple channels, which may be include two channels, three channels, four channels, or more than four channels. The multi-channel wet-clean circulation system 10 may work under a switch mode, wherein the multiple channels may be switched on and off, so that one of the channels is always turned on to trap the metal ions. FIGS. 4 and 5 illustrate the operation of an exemplary switch-mode dual-channel wet-clean circulation system 10. Referring to FIG. 4, two channels are connected to filter 20 through switch 40. The first channel includes metal-ion absorber 22A and the corresponding pipes. The second channel includes metal-ion absorber 22B and the corresponding pipes. Each of metal- ion absorbers 22A and 22B may have a structure essentially the same as metal-ion absorber 22 in FIG. 1. Switch 40 is configured to turn on one of the first channel 42 and second channel 44, so that the corresponding metal- ion absorber 22A or 22B receives wet-clean chemical 18. At the same time, the other channel is turned off by switch 40, as shown by the “x” marks. For example, in FIG. 4, the first channel 42 is turned on, and hence metal-ion absorber 22A is used to trap the metal ions in wet-clean chemical 18A. The porous exchanger 24 in the second channel may be rejuvenized at this time by conducting rejuvenizing chemicals 36 into metal-ion absorber 22B. The used rejuvenizing chemical 38 is also drained.
  • Referring to FIG. 5, the second channel 44 is turned on, and hence metal-ion absorber 22B is used to trap the metal ions in wet-clean chemical 18A. The first channel 42 is turned off, as shown by the “x” marks. The porous exchanger 24 in the first channel 42 is rejuvenized. Accordingly, by switching the multi-channels, there is always one channel that is on-line for processing wet-clean chemical 18A. The down time of the respective wet-clean circulation system 10 is minimized.
  • In the embodiments of the present disclosure, the metal ions in the wet-clean chemical are removed, and hence the lifetime of the wet-clean chemical is extended. The loading of the wet-clean chemical is improved, and the wet clean process in accordance with the embodiments is more stable. Furthermore, the manufacturing cost of the respective integrated manufacturing process is reduced due to the saving in the wet-clean chemical. The chemical waste is also reduced.
  • In accordance with some embodiments, a method includes passing a chemical solution through a metal-ion absorber, wherein metal ions in the metal-ion absorber are trapped by the metal-ion absorber. The chemical solution exiting out of the metal-ion absorber is then used to etch a metal-containing region, wherein the metal-containing region includes a metal that is of a same element type as the metal ions.
  • In accordance with other embodiments, a chemical solution is passed through a metal-ion absorber. The titanium ions in the chemical solution are trapped by the metal-ion absorber when the chemical solution is passed through the metal-ion absorber. A hard mask in a semiconductor wafer is etched using the chemical solution that flows out of the metal-ion absorber, wherein the hard mask comprises titanium. The chemical solution is collected after the chemical solution is used to etch the hard mask. The chemical solution that is used to etch the hard mask is conducted back to the metal-ion absorber.
  • In accordance with yet other embodiments, an apparatus includes a metal-ion absorber configured to absorb metal ions in a chemical solution, and a process chamber connected to the metal-ion absorber through a pipe. The pipe is configured to conduct the chemical solution from the metal-ion absorber to the process chamber. The process chamber is configured to perform an etching on a hard mask in a wafer. A conduction path connects the process chamber back to the metal-ion absorber, wherein the conduction path is configured to conduct the chemical solution back to the metal-ion absorber.
  • Although the embodiments and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the embodiments as defined by the appended claims. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, and composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. In addition, each claim constitutes a separate embodiment, and the combination of various claims and embodiments are within the scope of the disclosure.

Claims (20)

What is claimed is:
1. A method comprising:
passing a chemical solution through a metal-ion absorber, wherein first metal ions in the metal-ion absorber are trapped by the metal-ion absorber; and
using the chemical solution exiting out of the metal-ion absorber to etch a metal-containing region, wherein the metal-containing region comprises second metal ions, and wherein the first metal ions and the second metal ions are of a same element type.
2. The method of claim 1 further comprising:
after the metal-containing region is etched, collecting the chemical solution that comprises the second metal ions; and
conducting the chemical solution that comprises the second metal ions back into the metal-ion absorber to trap the second metal ions.
3. The method of claim 1, wherein the first metal ions and the second metal ions comprise titanium ions.
4. The method of claim 1, wherein the metal-ion absorber comprises a metal-ion exchanger, and wherein the metal-ion exchanger comprises:
a porous base material; and
a polymer coated on surfaces of the porous base material, wherein the polymer is coated into pores of the porous base material.
5. The method of claim 1 further comprising rejuvenizing a metal-ion exchanger in the metal-ion absorber by removing the first metal ions from the metal-ion exchanger.
6. The method of claim 1 further comprising performing an in-line monitoring on the chemical solution that exits out of the metal-ion absorber.
7. The method of claim 1 further comprising:
switching off a first channel comprising the metal-ion absorber to stop the metal-ion absorber from receiving the chemical solution; and
switching on a second channel comprising an additional metal-ion absorber, wherein the additional metal-ion absorber is configured to trap metal ions in the chemical solution.
8. A method comprising:
passing a chemical solution through a metal-ion absorber, wherein titanium ions in the chemical solution are trapped by the metal-ion absorber when the chemical solution is passed through the metal-ion absorber;
etching a hard mask in a semiconductor wafer using the chemical solution that flows out of the metal-ion absorber, wherein the hard mask comprises titanium;
collecting the chemical solution after the chemical solution is used to etch the hard mask; and
conducting the chemical solution that is used to etch the hard mask back to the metal-ion absorber.
9. The method of claim 8 further comprising:
before the passing the chemical solution through the metal-ion absorber, filtering the chemical solution.
10. The method of claim 8 further comprising replenishing the chemical solution with an additional chemical solution, wherein the additional chemical solution is free from titanium ions.
11. The method of claim 8, wherein the metal-ion absorber comprises a metal-ion exchanger, and wherein the metal-ion exchanger comprises:
a porous base material; and
a polymer coated on surfaces of the porous base material, wherein the polymer is further coated into pores of the porous base material, and wherein the pores of the metal-ion exchanger interconnect opposite surfaces of the metal-ion exchanger.
12. The method of claim 11, wherein the polymer comprises a functional group selected from the group consisting essentially of cation (R—H), anion (R—OH), and combinations thereof.
13. The method of claim 8 further comprising rejuvenizing a metal-ion exchanger in the metal-ion absorber by removing the titanium ions trapped by the metal-ion exchanger.
14. The method of claim 13, wherein the rejuvenizing the metal-ion exchanger comprises a base flushing or an acid flushing.
15. An apparatus comprising:
a metal-ion absorber configured to absorb metal ions in a chemical solution;
a process chamber connected to the metal-ion absorber through a pipe, wherein the pipe is configured to conduct the chemical solution from the metal-ion absorber to the process chamber, and wherein the process chamber is configured to perform an etching on a hard mask inn a wafer; and
a conduction path connecting the process chamber back to the metal-ion absorber, wherein the conduction path is configured to conduct the chemical solution back to the metal-ion absorber.
16. The apparatus of claim 15, wherein the metal-ion absorber comprises a metal-ion exchanger, and wherein the metal-ion exchanger comprises:
a porous base material comprising pores interconnecting opposite surfaces of the metal-ion exchanger; and
a polymer coated on the surfaces of the porous base material, wherein the polymer is coated into the pores.
17. The apparatus of claim 16, wherein the polymer comprises a functional group selected from the group consisting essentially of cation (R—H), anion (R—OH), and combinations thereof.
18. The apparatus of claim 16, wherein the base material comprises a ceramic or a carbon-containing material.
19. The apparatus of claim 15 further comprising an in-line monitor connected to an outlet of the metal-ion absorber, wherein the in-line monitor is configured to monitor an amount of the metal ions in the chemical solution.
20. The apparatus of claim 15 further comprising a filter, wherein an outlet of the filter is connected to an inlet of the metal-ion absorber, and wherein the filter is configured to filter particles in the chemical solution.
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