US20150001510A1 - Organic light-emitting device - Google Patents
Organic light-emitting device Download PDFInfo
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- US20150001510A1 US20150001510A1 US14/319,172 US201414319172A US2015001510A1 US 20150001510 A1 US20150001510 A1 US 20150001510A1 US 201414319172 A US201414319172 A US 201414319172A US 2015001510 A1 US2015001510 A1 US 2015001510A1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/00—Organic light-emitting devices
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- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
Abstract
An organic light-emitting device (OLED) which exhibits superior light extraction efficiency due to an extraction structure for dipole light generated from an organic light-emitting layer. The OLED includes a first glass substrate, a first electrode disposed on the first glass substrate, an organic light-emitting layer disposed on the first electrode, a second electrode disposed on the organic light-emitting layer, and a second glass substrate disposed on the second electrode. The second electrode has a composite electrode structure including a first transparent electrode layer and a second transparent electrode layer stacked on each other, the refractive index of the second transparent electrode layer being higher than the refractive index of the first transparent electrode layer.
Description
- The present application claims priority from Korean Patent Application Number 10-2013-0075473 filed on Jun. 28, 2013, the entire contents of which are incorporated herein for all purposes by this reference.
- 1. Field of the Invention
- The present invention relates to an organic light-emitting device (OLED), and more particularly, to an OLED which exhibits superior light extraction efficiency using an extraction structure for dipole light (light from dipole source) generated from an organic light-emitting layer.
- 2. Description of Related Art
- In general, only about 20% of light generated from an OLED is emitted to the outside and about 80% of the light is lost by a waveguide effect originating from the difference in the refractive index between a glass substrate and an organic light-emitting layer which includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer and by a total internal reflection originating from the difference in the refractive index between the glass substrate and the air. Specifically, the refractive index of the internal organic light-emitting layer 30 ranges from 1.7 to 1.8, whereas the refractive index of indium tin oxide (ITO) which is generally used for the anode is about 1.9. Since the two layers have a very small thickness ranging from 200 to 400 nm and the refractive index of glass used for the glass substrate is about 1.5, a planar waveguide is thereby formed inside the OLED. It is calculated that the ratio of the light lost in the internal waveguide mode due to the above-described reason is about 45%. In addition, since the refractive index of the glass substrate is about 1.5 and the refractive index of the ambient air is 1.0, when the light is directed outward from the inside of the glass substrate, a ray of light having an angle of incidence greater than a critical angle is totally reflected and is trapped inside the glass substrate. Since the ratio of the trapped light is up to about 35%, only about 20% of the generated light is emitted to the outside.
- Dipoles are a type of light generated from the OLED, and the light extraction efficiency is significantly dependent on the direction in which dipoles oscillate. In general, dipoles oscillate in the direction vertical or parallel to a plane of the organic light-emitting layer. Dipoles oscillating in the vertical direction and dipoles oscillating in the parallel direction are uniformly distributed.
- Among them, dipoles oscillating in the vertical direction have a significant contribution to the formation of the internal waveguide mode. That is, dipoles oscillating in the vertical direction are a cause that lowers the light extraction efficiency of the OLED.
- In such an atmosphere where dipoles oscillating in the vertical direction continuously to exist, a significant improvement in the light extraction efficiency is not expectable even if, for example, a nanostructural internal light extraction layer having a light-scattering function is sandwiched between the anode and the glass substrate.
- The information disclosed in the Background of the Invention section is provided only for better understanding of the background of the invention, and should not be taken as an acknowledgment or any form of suggestion that this information forms a prior art that would already be known to a person skilled in the art.
- Patent Document 1: Korean Patent No. 10-2011-0062236 (Jun. 10, 2011)
- Various aspects of the present invention provide a an organic light-emitting device (OLED) which exhibits superior light extraction efficiency due to an extraction structure for dipole light (light from dipole source) generated from an organic light-emitting layer.
- In an aspect of the present invention, provided is an OLED that includes: a first glass substrate; a first electrode disposed on the first glass substrate; an organic light-emitting layer disposed on the first electrode; a second electrode disposed on the organic light-emitting layer; and a second glass substrate disposed on the second electrode. The second electrode has a composite electrode structure including a first transparent electrode layer and a second transparent electrode layer stacked on each other, the refractive index of the second transparent electrode layer being higher than the refractive index of the first transparent electrode layer.
- According to an embodiment of the present invention, the first transparent electrode layer may be disposed at a side of the second glass substrate, and the second transparent electrode layer may be disposed at a side of the organic light-emitting layer.
- The refractive index of the second transparent electrode layer may range from 2.1 to 2.5.
- The second transparent electrode layer may be made of Al- or Ga-doped ZnO or Nb-doped TiO2.
- The first transparent electrode layer may be made of indium tin oxide (ITO).
- The thickness of the second electrode may range from 50 to 200 nm.
- In another aspect of the present invention, provided is an OLED that includes: a first glass substrate; a first electrode disposed on the first glass substrate; an organic light-emitting layer disposed on the first electrode; a second electrode disposed on the organic light-emitting layer, wherein the second electrode has a composite electrode structure including a first transparent electrode layer and a second transparent electrode layer stacked on each other, the refractive index of the second transparent electrode layer being higher than a refractive index of the first transparent electrode layer; a light extraction layer disposed on the second electrode; and a second glass substrate disposed on the light extraction layer.
- According to an embodiment of the present invention, the light extraction layer may include: a matrix layer; and at least one light-scattering body disposed inside the matrix layer, the light-scattering body being made of a material, the refractive index of which is higher than the refractive index of the matrix layer.
- The refractive index of the light-scattering body may be higher than the refractive index of the first transparent electrode layer.
- The first transparent electrode layer may be disposed at a side of the light extraction layer, and the second transparent electrode layer may be disposed at a side of the organic light-emitting layer.
- The light-scattering body may be disposed inside a portion of the matrix layer that adjoins to the first transparent electrode layer.
- The refractive index of the second transparent electrode layer may range from 2.1 to 2.5.
- The second transparent electrode layer may be made of Al- or Ga-doped ZnO or Nb-doped TiO2.
- The first transparent electrode layer may be made of ITO.
- The thickness of the second electrode may range from 50 to 200 nm.
- The above-described OLED may have a tandem structure in which a plurality of the organic light-emitting layers are provided which each alternate with interconnecting layers.
- According to embodiments of the invention, the OLED has the extraction structure for dipole light generated from the organic light-emitting layer. The extraction structure for dipole light includes the high refractive index layer, the low refractive index layer and the high refractive index light-scattering bodies. The extraction structure for dipole light can first guide the combination of light in the direction in which the light exits and then diversify paths along which the light is emitted by scattering the light, thereby improving the light extraction efficiency of the OLED. In particular, the extraction structure for dipole light can convert vertical dipole light generated by dipoles that oscillate in a direction vertical to the device into parallel dipole light. Considering that the vertical dipole light is a cause that creates total reflection by forming a waveguide mode inside the OLED, converting the vertical dipole light into the parallel dipole light can realize superior light extraction efficiency.
- The methods and apparatuses of the present invention have other features and advantages which will be apparent from, or are set forth in greater detail in the accompanying drawings, which are incorporated herein, and in the following Detailed Description of the Invention, which together serve to explain certain principles of the present invention.
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FIG. 1 is a cross-sectional view schematically showing an organic light-emitting device (OLED) according to an exemplary embodiment of the invention; -
FIG. 2 is a cross-sectional view schematically showing an OLED according to another exemplary embodiment of the invention; -
FIG. 3 is images showing simulation results on the geometry of propagation of vertical dipole light generated from an OLED according to an exemplary embodiment of the invention and that of vertical dipole light generated an OLED of the related art; -
FIG. 4 is a graph showing the intensities of parallel dipole light depending on the wavelengths in an OLED according to an exemplary embodiment of the invention and an OLED of the related art; -
FIG. 5 is a graph showing the intensities of vertical dipole light depending on the wavelengths in an OLED according to an exemplary embodiment of the invention and an OLED of the related art; and -
FIG. 6 is a graph showing the average values of the intensities of the parallel dipole light and the vertical dipole light depending on the wavelengths in the OLEDs shown inFIG. 4 andFIG. 5 . - Reference will now be made in detail to an organic light-emitting device (OLED) according to the present invention, embodiments of which are illustrated in the accompanying drawings and described below, so that a person skilled in the art to which the present invention relates can easily put the present invention into practice.
- Throughout this document, reference should be made to the drawings, in which the same reference numerals and signs are used throughout the different drawings to designate the same or similar components. In the following description of the present invention, detailed descriptions of known functions and components incorporated herein will be omitted when they may make the subject matter of the present invention unclear.
- As shown in
FIG. 1 , an OLED 100 according to an exemplary embodiment of the invention includes afirst glass substrate 110, afirst electrode 120, an organic light-emitting layer 130, asecond electrode 140 and asecond glass substrate 150. For the operation of theOLED 100, a thin-film transistor (not shown) is connected to theOLED 100. - The
first glass substrate 110 is an encapsulation substrate which protects thefirst electrode 120, the organic light-emitting layer 130 and thesecond electrode 140 from the external environment. Thefirst glass substrate 110 serves also as a base substrate on which thefirst electrode 120, the organic light-emitting layer 130 and thesecond electrode 140 are deposited. Thefirst glass substrate 110 can be made of, for example, soda-lime (SiO2—CaO—Na2O) glass or aluminosilicate (SiO2—Al2O3—Na2O) glass. In addition, thefirst glass substrate 110 and thesecond glass substrate 150 are disposed such that they face each other. - The
first electrode 120 is formed on thefirst glass substrate 110. Thefirst electrode 120 serves as the cathode of theOLED 100. As shown inFIG. 1 , when theOLED 100 according to this exemplary embodiment is a bottom emission type OLED, thefirst electrode 120 can be implemented as a metal thin film made of Al, Al:Li or Mg:Ag having a smaller work function in order to facilitate electron injection into the organic light-emittinglayer 130. Although not shown, when the OLED according to this exemplary embodiment is a top emission type OLED, the first electrode can have a multilayer structure which includes a semitransparent electrode of a metal thin film made of Al, Al:Li or Mg:Ag and a transparent electrode of an oxide thin film made of indium tin oxide (ITO) in order to facilitate the transmission of light that is generated from the organic light-emittinglayer 130. - The organic light-emitting
layer 130 includes an electron injection layer, an electron transport layer, an emissive layer, a hole transport layer and a hole injection layer which are sequentially stacked on thefirst electrode 120. With this structure of the organic light-emittinglayer 130, when a forward voltage is applied between thesecond electrode 140 serving as the anode and thefirst electrode 120 serving as the cathode, electrons from thefirst electrode 120 migrate to the emissive layer through the electron injection layer and the electron transport layer, while holes from thesecond electrode 140 migrate to the emissive layer through the hole injection layer and the hole transport layer. The electrons and the holes that have migrated into the emissive layer recombine, thereby generating parallel dipoles that oscillate in the direction parallel to the plane of the emissive layer and vertical dipoles that oscillate in the direction vertical to the plane of the emissive layer. When the parallel dipoles and the vertical dipoles transit from an excited state to a ground state, parallel dipole light and vertical dipole light are emitted. The brightness of the parallel dipole light and the vertical dipole light is proportional to the amount of current that flows between the first andsecond electrodes - The
OLED 100 according to this exemplary embodiment can have a tandem structure, in which a plurality of the organic light-emittinglayers 130 are provided which each alternate with interconnecting layers. - The
second electrode 140 is disposed on the organic light-emittinglayer 130. Thesecond electrode 140 serves as the anode of theOLED 100. Thesecond electrode 140 according to this exemplary embodiment has a composite electrode structure in which a firsttransparent electrode layer 141 and a secondtransparent electrode layer 142 are stacked on each other. According to an embodiment of the invention, the thickness of thesecond electrode 140 having the composite electrode structure can range from 50 to 200 nm. - The first
transparent electrode layer 141 is disposed at the side of thesecond glass substrate 150, and the secondtransparent electrode layer 142 is disposed at the side of the organic light-emittinglayer 130. The secondtransparent electrode layer 142 is made of a material, the refractive index of which is higher than that of the firsttransparent electrode layer 141. Thus, the portion of thesecond electrode 140 that adjoins to the organic light-emittinglayer 130 has a higher refractive index, whereas the portion of thesecond electrode 140 that adjoins to theglass substrate 150 has a lower refractive index. In this manner, thesecond electrode 140 has the composite electrode structure in which the upper and lower portions (with respect to the paper surface) have different refractive indices. - The second
transparent electrode layer 142, i.e. the portion of thesecond electrode 140 that adjoins to the organic light-emittinglayer 130, serves to guide parallel dipole light and vertical dipole light generated from the organic light-emittinglayer 130 to the firsttransparent electrode layer 141 having a lower refractive index so as to be optically coupled. That is, the secondtransparent electrode layer 142 serves to guide optical coupling in the direction toward thesecond glass substrate 150 that is on the outermost path of light emitted from the organic light-emittinglayer 130. When the optical coupling between the parallel dipole light and the vertical dipole light is guided in the direction toward thesecond glass substrate 150 in this manner, the amount of exiting light increases. - According to an embodiment of the invention, the refractive index (n) of the second
transparent electrode layer 142 may range from 2.1 to 2.5. In order to have this refractive index, the secondtransparent electrode layer 142 can be made of Al- or Ga-doped ZnO or Nb-doped TiO2. However, this is merely an example, and the secondtransparent electrode layer 142 can be made of a variety of transparent conductive material, the refractive index of which is in the above-mentioned range. - According to an embodiment of the invention, the first
transparent electrode layer 141 is made of a material, the refractive index of which is lower than that of the secondtransparent electrode layer 142, in order to guide optical coupling. According to an embodiment of the invention, since the refractive index of the secondtransparent electrode layer 142 ranges from 2.1 to 2.5, the firsttransparent electrode layer 141 can be made of a transparent conductive material, such as ITO, which has a lower refractive index. - The
second glass substrate 150 is disposed on thesecond electrode 140. Like thefirst glass substrate 110, thesecond glass substrate 150 serves to protect the organic light-emittinglayer 130 from the external environment. In addition, thesecond glass substrate 150 serves as a path through which light generated from the organic light-emittinglayer 130 is emitted to the outside. Thesecond glass substrate 150 can be made of, for example, soda-lime glass or aluminosilicate glass like thefirst glass substrate 110 which faces thesecond glass substrate 150. - Reference will now be made to an OLED according to another exemplary embodiment in conjunction with
FIG. 2 . -
FIG. 2 is a cross-sectional view schematically showing the OLED according to another exemplary embodiment of the invention. - As shown in
FIG. 2 , anOLED 200 according to another exemplary embodiment of the invention includes afirst glass substrate 110, afirst electrode 120, an organic light-emittinglayer 130, asecond electrode 140, asecond glass substrate 150 and alight extraction layer 260. - This exemplary embodiment of the invention is substantially the same as the former exemplary embodiment except that the light extraction layer is further included. Therefore, the same reference numerals will be used to designate the same elements, and detailed descriptions thereof will be omitted.
- The
light extraction layer 260 according to this exemplary embodiment is disposed between thesecond electrode 140 and thesecond glass substrate 150. Thelight extraction layer 260 serves as an internal light extraction layer of theOLED 200. - According to this exemplary embodiment, the
light extraction layer 260 includes amatrix layer 261 and light-scatteringbodies 262. The light-scatteringbodies 262 are disposed inside thematrix layer 261. The light-scatteringbodies 262 can have the shape of spheres or rods. The light-scatteringbodies 262 can be configured as a plurality of light-scattering bodies which is arranged inside thematrix layer 261, more particularly, inside the portion of thematrix layer 261 that adjoins to the firsttransparent electrode layer 141. - The light-scattering
bodies 262 according to this exemplary embodiment are made of a material, the refractive index of which is higher than that of the matrix layer 216. In addition, the refractive index of the light-scatteringbodies 262 is also higher than that of the firsttransparent electrode layer 141. Furthermore, the refractive index of the light-scatteringbodies 262 can be the same as or similar to that of the secondtransparent electrode layer 142. Accordingly, theOLED 200 according to this exemplary embodiment has a light extraction structure including the secondtransparent electrode layer 142, the firsttransparent electrode layer 141 and the light extraction layer 260 (262), i.e. the high refractive index layer, the low refractive index layer and the high refractive index light-scattering bodies, which are sequentially disposed along the path along which parallel dipole light and vertical dipole light generated from the organic light-emittinglayer 130 are emitted. Referring to the simulation results shown inFIG. 3 , the parallel dipole light and the vertical dipole light generated from the organic light-emittinglayer 130 are first guided to the firsttransparent electrode layer 141 having a lower refractive index by the secondtransparent electrode layer 142 having a higher refractive index so as to be optically coupled, and then scattered by the light-scatteringbodies 262 having a higher refractive index. At this time, the vertical dipole light is converted into the parallel dipole light. When the vertical dipole light that has a significant contribution to the formation of a waveguide mode inside theOLED 200 that causes total reflection is converted into the parallel dipole light, the waveguide mode inside theOLED 200 is disturbed, leading to an improved light extraction efficiency (see part (a) inFIG. 3 ). In contrast, most of light generated from the OLED of the related art is trapped inside the organic light-emitting layer (see part (b) inFIG. 3 ). - Accordingly, the
OLED 200 according to this exemplary embodiment has the light extraction structure which includes the high refractive index layer, the low refractive index layer and the high refractive index light-scattering bodies, and thus can realize a better light extraction efficiency than theOLED 100 according to the former exemplary embodiment having the light extraction structure which includes the high refractive index layer and the low refractive index layer. -
FIG. 4 andFIG. 5 are graphs showing the intensities of parallel dipole light and vertical dipole light depending on the wavelengths in an OLED according to an exemplary embodiment of the invention and an OLED of the related art.FIG. 6 is a graph showing the average values of the intensities of the parallel dipole light and the vertical dipole light depending on the wavelengths in the OLEDs shown inFIG. 4 andFIG. 5 . According to these graphs, both the OLED according to an exemplary embodiment of the invention (with modif. TCO) and the OLED according to another exemplary embodiment of the invention (with modif. TCO+micron rods) exhibit an improvement in the light intensity, i.e. the light extraction efficiency, over that of the OLED of the related art (conventional). In addition, it was also confirmed that the OLED according to another exemplary embodiment of the invention (with modif. TCO+micron rods) having the light extraction structure which includes the high refractive index layer, the low refractive index layer and the high refractive index light-scattering bodies can more efficiently extract vertical dipole light than the OLED according to an exemplary embodiment of the invention (with modif. TCO). - The foregoing descriptions of specific exemplary embodiments of the present invention have been presented with respect to the drawings. They are not intended to be exhaustive or to limit the invention to the precise forms disclosed, and obviously many modifications and variations are possible for a person having ordinary skill in the art in light of the above teachings.
- It is intended therefore that the scope of the invention not be limited to the foregoing embodiments, but be defined by the Claims appended hereto and their equivalents.
Claims (17)
1. An organic light-emitting device comprising:
a first glass substrate;
a first electrode disposed on the first glass substrate;
an organic light-emitting layer disposed on the first electrode;
a second electrode disposed on the organic light-emitting layer; and
a second glass substrate disposed on the second electrode,
wherein the second electrode has a composite electrode structure including a first transparent electrode layer and a second transparent electrode layer stacked on each other, a refractive index of the second transparent electrode layer being higher than a refractive index of the first transparent electrode layer.
2. The organic light-emitting device according to claim 1 , wherein the first transparent electrode layer is disposed at a side of the second glass substrate, and the second transparent electrode layer is disposed at a side of the organic light-emitting layer.
3. The organic light-emitting device according to claim 2 , wherein the refractive index of the second transparent electrode layer ranges from 2.1 to 2.5.
4. The organic light-emitting device according to claim 3 , wherein the second transparent electrode layer comprises Al- or Ga-doped ZnO or Nb-doped TiO2.
5. The organic light-emitting device according to claim 4 , wherein the first transparent electrode layer comprises indium tin oxide.
6. The organic light-emitting device according to claim 1 , wherein a thickness of the second electrode ranges from 50 to 200 nm.
7. The organic light-emitting device according to claim 1 , comprising a plurality of the organic light-emitting layers which each alternate with interconnecting layers to form a tandem structure.
8. An organic light-emitting device comprising:
a first glass substrate;
a first electrode disposed on the first glass substrate;
an organic light-emitting layer disposed on the first electrode;
a second electrode disposed on the organic light-emitting layer, wherein the second electrode has a composite electrode structure including a first transparent electrode layer and a second transparent electrode layer stacked on each other, a refractive index of the second transparent electrode layer being higher than a refractive index of the first transparent electrode layer;
a light extraction layer disposed on the second electrode; and
a second glass substrate disposed on the light extraction layer.
9. The organic light-emitting device according to claim 8 , wherein the light extraction layer comprises:
a matrix layer; and
at least one light-scattering body disposed inside the matrix layer, the light-scattering body being made of a material, a refractive index of which is higher than a refractive index of the matrix layer.
10. The organic light-emitting device according to claim 9 , wherein the refractive index of the light-scattering body is higher than the refractive index of the first transparent electrode layer.
11. The organic light-emitting device according to claim 10 , wherein the first transparent electrode layer is disposed at a side of the light extraction layer, and the second transparent electrode layer is disposed at a side of the organic light-emitting layer.
12. The organic light-emitting device according to claim 11 , wherein the light-scattering body is disposed inside a portion of the matrix layer that adjoins to the first transparent electrode layer.
13. The organic light-emitting device according to claim 8 , wherein the refractive index of the second transparent electrode layer ranges from 2.1 to 2.5.
14. The organic light-emitting device according to claim 13 , the second transparent electrode layer comprises Al- or Ga-doped ZnO or Nb-doped TiO2.
15. The organic light-emitting device according to claim 14 , wherein the first transparent electrode layer comprises indium tin oxide.
16. The organic light-emitting device according to claim 8 , wherein a thickness of the second electrode ranges from 50 to 200 nm.
17. The organic light-emitting device according to claim 8 , comprising a plurality of the organic light-emitting layers which each alternate with interconnecting layers to form a tandem structure.
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US20170110689A1 (en) * | 2015-04-14 | 2017-04-20 | Boe Technology Group Co., Ltd. | Organic light-emitting diode display device and its manufacturing method |
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6316786B1 (en) * | 1998-08-29 | 2001-11-13 | International Business Machines Corporation | Organic opto-electronic devices |
US20070141753A1 (en) * | 2005-06-12 | 2007-06-21 | Toyoda Gosei Co., Ltd | Group III nitride based compound semiconductor device and producing method for the same |
US20070194708A1 (en) * | 2004-03-16 | 2007-08-23 | Van Mol Antonius M B | Flexible Organic Electronic Device And Methods For Preparing The Same |
US20090072733A1 (en) * | 2005-03-11 | 2009-03-19 | Mitsubishi Chemical Corporation | Electroluminescence element and lighting apparatus |
US20100327296A1 (en) * | 2001-11-01 | 2010-12-30 | Sony Corporation | Display apparatus |
US20110297948A1 (en) * | 2010-06-04 | 2011-12-08 | Samsung Mobile Display Co. Ltd. | Organic light-emitting display |
US20120049723A1 (en) * | 2010-08-26 | 2012-03-01 | Electronics And Telecommunications Research Institute | Organic electroluminescence device |
US20120292610A1 (en) * | 2011-05-17 | 2012-11-22 | Seong-Min Wang | Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices |
US20140206117A1 (en) * | 2011-09-26 | 2014-07-24 | Sharp Kabushiki Kaisha | Method for manufacturing display device |
US20140312327A1 (en) * | 2013-03-12 | 2014-10-23 | Ppg Industries Ohio, Inc. | Transparent Conductive Oxide Coatings For Organic Light Emitting Diodes And Solar Devices |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100862505B1 (en) * | 2006-02-01 | 2008-10-08 | 삼성전기주식회사 | Light emitting diode and method of manufacturing the same |
KR101318374B1 (en) * | 2009-12-03 | 2013-10-16 | 한국전자통신연구원 | Organic light emitting diode and manufacturing method thereof |
JP2015026418A (en) * | 2011-11-18 | 2015-02-05 | シャープ株式会社 | Organic electroluminescent display device and electronic apparatus using the same, and method for manufacturing organic electroluminescent display device |
-
2013
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-
2014
- 2014-06-30 US US14/319,172 patent/US20150001510A1/en not_active Abandoned
-
2018
- 2018-02-20 US US15/900,464 patent/US10276834B2/en not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6316786B1 (en) * | 1998-08-29 | 2001-11-13 | International Business Machines Corporation | Organic opto-electronic devices |
US20100327296A1 (en) * | 2001-11-01 | 2010-12-30 | Sony Corporation | Display apparatus |
US20170301882A1 (en) * | 2001-11-01 | 2017-10-19 | Joled Inc. | Display apparatus |
US20070194708A1 (en) * | 2004-03-16 | 2007-08-23 | Van Mol Antonius M B | Flexible Organic Electronic Device And Methods For Preparing The Same |
US20090072733A1 (en) * | 2005-03-11 | 2009-03-19 | Mitsubishi Chemical Corporation | Electroluminescence element and lighting apparatus |
US20070141753A1 (en) * | 2005-06-12 | 2007-06-21 | Toyoda Gosei Co., Ltd | Group III nitride based compound semiconductor device and producing method for the same |
US20110297948A1 (en) * | 2010-06-04 | 2011-12-08 | Samsung Mobile Display Co. Ltd. | Organic light-emitting display |
US20120049723A1 (en) * | 2010-08-26 | 2012-03-01 | Electronics And Telecommunications Research Institute | Organic electroluminescence device |
US8314542B2 (en) * | 2010-08-26 | 2012-11-20 | Electronics And Telecommunications Research Institute | Organic electroluminescence device |
US20120292610A1 (en) * | 2011-05-17 | 2012-11-22 | Seong-Min Wang | Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices |
US20140206117A1 (en) * | 2011-09-26 | 2014-07-24 | Sharp Kabushiki Kaisha | Method for manufacturing display device |
US20140312327A1 (en) * | 2013-03-12 | 2014-10-23 | Ppg Industries Ohio, Inc. | Transparent Conductive Oxide Coatings For Organic Light Emitting Diodes And Solar Devices |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170110689A1 (en) * | 2015-04-14 | 2017-04-20 | Boe Technology Group Co., Ltd. | Organic light-emitting diode display device and its manufacturing method |
US9905808B2 (en) * | 2015-04-14 | 2018-02-27 | Boe Technology Group Co., Ltd. | Organic light-emitting diode display device and its manufacturing method |
Also Published As
Publication number | Publication date |
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KR101466832B1 (en) | 2014-11-28 |
US10276834B2 (en) | 2019-04-30 |
US20180175328A1 (en) | 2018-06-21 |
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