US20140339074A1 - Wafer clamp assembly for holding a wafer during a deposition process - Google Patents

Wafer clamp assembly for holding a wafer during a deposition process Download PDF

Info

Publication number
US20140339074A1
US20140339074A1 US14/451,936 US201414451936A US2014339074A1 US 20140339074 A1 US20140339074 A1 US 20140339074A1 US 201414451936 A US201414451936 A US 201414451936A US 2014339074 A1 US2014339074 A1 US 2014339074A1
Authority
US
United States
Prior art keywords
wafer
contact portion
outer annular
finger members
annular member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/451,936
Inventor
Hermann Bichler
Reinhard Hanzlik
Stefan Fries
Frank Mueller
Heinrich Wachinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Deutschland GmbH filed Critical Texas Instruments Deutschland GmbH
Priority to US14/451,936 priority Critical patent/US20140339074A1/en
Publication of US20140339074A1 publication Critical patent/US20140339074A1/en
Assigned to TEXAS INSTRUMENTS INCORPORATED reassignment TEXAS INSTRUMENTS INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TEXAS INSTRUMENTS DEUTSCHLAND GMBH
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Definitions

  • the present invention relates to a wafer clamp assembly for holding a wafer during a deposition process.
  • the wafer is held to a pedestal of a heater unit which is located in a chamber filled with a noble gas or reactive gas up to a pressure in the millitorr range.
  • a clamp ring is used for clamping the wafer to the support surface.
  • the clamp ring has an inside diameter slightly smaller than the diameter of the wafer thus contacting the wafer all around its circumferential edge.
  • the edge exclusion i.e., the wafer area where no sputter deposition takes place or sputter deposition is minimized, is in a considerable range thereby reducing the surface which can be used for good electrical dies.
  • the wafer clamp is heated during the sputtering process due to ion bombardment from the plasma and a heat flux from the wafer clamp to the wafer takes place which makes the outer parts of the wafer overheated.
  • the material deposited in this area loses its specified property and will decrease the number of good electrical dies per wafer.
  • Another problem related to the clamp ring is that of clamp ring/wafer sticking In the area of minimum distance to the wafer the clamp ring may stick to the wafer due to the growing thickness of the sputtered material on the wafer clamp.
  • One approach to minimize the possibility of sticking is to form a portion that overhangs the contact surface between the wafer and the clamp ring, thereby blocking sputtered material from being deposited in the area where the clamp makes contact with the wafer.
  • the overhang portion does not completely eliminate the possibility of wafer sticking to the clamp ring.
  • the present invention provides an improved wafer clamp assembly that provides minimum edge exclusion, a reduced risk of clamp assembly/wafer sticking and minimum heat flux from the wafer clamp assembly to the wafer.
  • the wafer clamp assembly comprises an outer annular member that defines a central recess that has a diameter slightly greater than the diameter of the wafer.
  • a plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process.
  • the wafer clamp assembly does not contact the wafer all around its outer circumferential edge, but only at a few, selected areas where the finger members overhang the wafer. This leads to a reduced edge exclusion compared to that with a conventional wafer clamp ring and to a minimized heat flux from the wafer clamp assembly to the wafer thereby increasing the wafer surface area in which good electrical dies can be produced.
  • each of the finger members has a contact portion that is provided at a bottom surface of the respective finger member facing the wafer during the deposition process.
  • the wafer is not contacted in the whole area in which the finger members overhang the wafer, but only in the area associated with the contact portions which leads to a further reduction in wafer/clamp assembly contact surface.
  • the contact portion has a hemispherical shape so that a point contact is established between the wafer and the clamp assembly thereby reducing the contact area to a minimum.
  • FIG. 1 schematically shows in a sectional view a conventional wafer clamp ring contacting a wafer all around its circumferential edge;
  • FIG. 2 schematically shows the preferred embodiment of a wafer clamp assembly according to the present invention, with a wafer being clamped to a heatable pedestal;
  • FIG. 3 schematically shows a part of the wafer clamp assembly of FIG. 2 in an enlarged view
  • FIG. 4 schematically shows another part of the wafer clamp assembly of FIG. 2 in an enlarged view
  • FIG. 5 schematically shows the preferred embodiment of a wafer clamp assembly of FIG. 2 in a top view.
  • FIG. 1 of the drawings shows a part of a conventional wafer clamp ring 10 in a side view that has an inner diameter that is slightly smaller than the diameter of a wafer 12 to be clamped.
  • the wafer clamp ring 10 has an annular contact portion 14 contacting the wafer 12 all around its outer circumferential edge.
  • the wafer clamp ring 10 further has a portion 16 that overhangs the annular contact portion 14 .
  • a region 18 in which the wafer clamp ring 10 contacts the wafer surface and in which the overhang portion 16 overhangs the wafer 12 no or only minimized sputter deposition takes place.
  • the area of the covered region 18 defines the edge exclusion in which the wafer 12 cannot be used to produce good electrical dies.
  • FIGS. 2 to 5 show the preferred embodiment of a wafer clamp assembly according to the present invention.
  • a wafer 20 is clamped to a heatable and vertically adjustable pedestal 22 by means of the wafer clamp assembly 24 .
  • the wafer clamp assembly 24 comprises an outer annular member 26 .
  • a central recess 28 is provided which has a diameter D that is slightly greater than the diameter d of the wafer 20 to be clamped so that the wafer 20 is not contacted by the outer annular member 26 during the deposition process.
  • the preferred wafer clamp assembly 24 further comprises a number of finger members 30 that are carried by the outer annular member 26 and that extend radially inwardly from the outer annular member 26 into the central recess 28 .
  • Each finger member 30 thus protrude from the outer annular member 26 into the central recess 28 thereby partly overhanging the wafer 20 with a free end 29 .
  • Each finger member 30 has a contact portion 32 that contacts the wafer 20 during the deposition process.
  • the contact portion 32 is provided at a bottom surface 34 facing the wafer 20 during the deposition process and at a radially inwardly directed end 36 of the respective finger portion 30 .
  • the contact portion 32 has a hemispherical shape thereby establishing a point contact surface with the wafer 20 .
  • FIG. 3 of the drawings also shows a finger member 30 from a top view.
  • the finger member 30 comprises a flat planar member having a first portion 40 with an essentially rectangular horizontal cross-section and a second portion 42 that forms the radially inwardly directed end 36 of the finger portion 30 at which the contact portion 32 is provided.
  • the second portion 42 has a width that is gradually decreasing from a first width value, which corresponds to the width value of the rectangular first portion, to a second width value, which is preferably zero, in the radially inwardly direction so that a rounded tip 44 is formed.
  • the outer annular member 26 has an annular first projection 48 and an annular second projection 50 that is located radially outward from of the first projection 48 .
  • the first and second annular projections 48 , 50 are directed downward during the deposition process.
  • the numerous finger members 30 are connected to the outer annular member 26 by screw-mounting as shown in FIG. 4 .
  • each finger member 30 is screw-mounted to the outer annular member 26 by means of two screws 52 , wherein one of the screws 52 extends through the annular first projection 48 and the other of the screws 52 extends through the annular second projection 50 in a mounted state.
  • Each finger member 30 is mounted in an annular depression 54 defined by a step 55 and formed in the top surface of the outer annular member 26 .
  • the step 55 forms a stop for the finger members 30 .
  • the annular depression 54 is a planar depression that has a rectangular horizontal cross-section that extends radially inwardly from the step 55 all the way over the inner circumferential edge of the outer annular member 26 .
  • their rounded tips 44 project inwardly from the outer annular member 26 and thus shadow the outer edge of the wafer 20 .
  • a top view of the wafer clamp assembly is shown in FIG. 5 .
  • the wafer clamp assembly 24 of the present invention overcomes the problems that are involved with the use of a conventional clamp ring 10 as shown in FIG. 1 :
  • the wafer clamp assembly 24 does not cooperate with the wafer 20 so as to shadow it all around its outer circumferential edge, but it only shadows the wafer 20 at a few, selected areas where the free ends of the finger members 30 overhang the wafer 20 .
  • a minimized edge exclusion is achieved thereby increasing the wafer surface that can be used for the production of good electrical dies.
  • This advantageous effect is increased due to the shape of the second portions 42 which form rounded tips 44 and thus further minimize the shadowed wafer surface.
  • the surface contact of the wafer clamp assembly 24 with the wafer 20 is also drastically reduced during the deposition process.
  • the wafer clamp assembly 24 of the present invention only contacts the wafer 20 at the few, selected contact surfaces where the contact portions 32 of the finger portions 30 contact the wafer surface, instead of the contact surface all around the circumferential edge of the wafer with the wafer clamp ring 10 of FIG. 1 . Due to the hemispherical shape of the contact portions 32 the contact surfaces are point contacts, thereby further reducing the surface contact of the clamp assembly 24 with the wafer 10 . Due to this minimized surface contact the heat flow from the heated wafer clamp assembly 24 to the wafer 20 is insignificant, so that the parts of the wafer 20 near the wafer clamp assembly 24 do not become overheated.
  • the wafer clamp ring assembly 24 of the present invention can be manufactured in a very simple manner from a standard wafer clamp ring as shown, for example, in FIG. 1 of the drawings.
  • the inner circumferential edge of such a standard wafer clamp ring is milled out so as to remove the annular contact portion 14 and the portion 16 overhanging the annular contact portion 14 and so as to form the depression 54 at the inner circumferential edge of the clamp ring.
  • the finger members 30 that have had to be manufactured particularly for the improved wafer clamp assembly 24 according to the present invention are mounted to the milled-out wafer clamp by placing them into the depression 54 with predetermined distances and connecting them to the milled-out wafer clamp.
  • the milled-out wafer clamp forms the outer annular member 26 of the wafer clamp assembly 24 .
  • the finger members 30 are screw-mounted to the milled-out wafer clamp.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the wafer. A plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process.

Description

  • This application is a continuation of U.S. application Ser. No. 11/456,722, filed Jul. 11, 2006 (now U.S. Pat. No. 8,795,479), which claims priority from German Patent Application No. 10 2005 032 547.5, filed Jul. 12, 2005, the entireties of both of which are hereby incorporated by reference.
    • BACKGROUND
  • The present invention relates to a wafer clamp assembly for holding a wafer during a deposition process.
  • During most deposition processes. it is necessary to hold the wafer firmly against a support surface. During a sputter deposition process, for example, the wafer is held to a pedestal of a heater unit which is located in a chamber filled with a noble gas or reactive gas up to a pressure in the millitorr range. Usually, a clamp ring is used for clamping the wafer to the support surface. The clamp ring has an inside diameter slightly smaller than the diameter of the wafer thus contacting the wafer all around its circumferential edge. Due to the large contact surface the edge exclusion, i.e., the wafer area where no sputter deposition takes place or sputter deposition is minimized, is in a considerable range thereby reducing the surface which can be used for good electrical dies. In addition, the wafer clamp is heated during the sputtering process due to ion bombardment from the plasma and a heat flux from the wafer clamp to the wafer takes place which makes the outer parts of the wafer overheated. The material deposited in this area loses its specified property and will decrease the number of good electrical dies per wafer. Another problem related to the clamp ring is that of clamp ring/wafer sticking In the area of minimum distance to the wafer the clamp ring may stick to the wafer due to the growing thickness of the sputtered material on the wafer clamp. One approach to minimize the possibility of sticking is to form a portion that overhangs the contact surface between the wafer and the clamp ring, thereby blocking sputtered material from being deposited in the area where the clamp makes contact with the wafer. However, the overhang portion does not completely eliminate the possibility of wafer sticking to the clamp ring.
    • SUMMARY
  • The present invention provides an improved wafer clamp assembly that provides minimum edge exclusion, a reduced risk of clamp assembly/wafer sticking and minimum heat flux from the wafer clamp assembly to the wafer.
  • According to the present invention the wafer clamp assembly comprises an outer annular member that defines a central recess that has a diameter slightly greater than the diameter of the wafer. A plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process. Thus, the wafer clamp assembly does not contact the wafer all around its outer circumferential edge, but only at a few, selected areas where the finger members overhang the wafer. This leads to a reduced edge exclusion compared to that with a conventional wafer clamp ring and to a minimized heat flux from the wafer clamp assembly to the wafer thereby increasing the wafer surface area in which good electrical dies can be produced.
  • According to a preferred embodiment each of the finger members has a contact portion that is provided at a bottom surface of the respective finger member facing the wafer during the deposition process. Thus, the wafer is not contacted in the whole area in which the finger members overhang the wafer, but only in the area associated with the contact portions which leads to a further reduction in wafer/clamp assembly contact surface. In a further preferred embodiment the contact portion has a hemispherical shape so that a point contact is established between the wafer and the clamp assembly thereby reducing the contact area to a minimum.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • Further features and advantages of the invention read from the following description of an embodiment in accordance with the present invention and with reference to the drawings in which:
  • FIG. 1 schematically shows in a sectional view a conventional wafer clamp ring contacting a wafer all around its circumferential edge;
  • FIG. 2 schematically shows the preferred embodiment of a wafer clamp assembly according to the present invention, with a wafer being clamped to a heatable pedestal;
  • FIG. 3 schematically shows a part of the wafer clamp assembly of FIG. 2 in an enlarged view;
  • FIG. 4 schematically shows another part of the wafer clamp assembly of FIG. 2 in an enlarged view;
  • FIG. 5 schematically shows the preferred embodiment of a wafer clamp assembly of FIG. 2 in a top view.
    •  DETAILED DESCRIPTION OF EMBODIMENTS
  • FIG. 1 of the drawings shows a part of a conventional wafer clamp ring 10 in a side view that has an inner diameter that is slightly smaller than the diameter of a wafer 12 to be clamped. The wafer clamp ring 10 has an annular contact portion 14 contacting the wafer 12 all around its outer circumferential edge. The wafer clamp ring 10 further has a portion 16 that overhangs the annular contact portion 14. In a region 18 in which the wafer clamp ring 10 contacts the wafer surface and in which the overhang portion 16 overhangs the wafer 12 no or only minimized sputter deposition takes place. The area of the covered region 18 defines the edge exclusion in which the wafer 12 cannot be used to produce good electrical dies. Further, due to the large contact surface between the wafer clamp ring 10 and the wafer 12 a heat flux from the heated wafer clamp ring 10 to the wafer 12 takes place which makes the wafer 12 near the clamp ring 10 overheated thereby also decreasing the number of good electrical dies per wafer 12.
  • FIGS. 2 to 5 show the preferred embodiment of a wafer clamp assembly according to the present invention. A wafer 20 is clamped to a heatable and vertically adjustable pedestal 22 by means of the wafer clamp assembly 24. The wafer clamp assembly 24 comprises an outer annular member 26. In the center of the outer annular member a central recess 28 is provided which has a diameter D that is slightly greater than the diameter d of the wafer 20 to be clamped so that the wafer 20 is not contacted by the outer annular member 26 during the deposition process. The preferred wafer clamp assembly 24 further comprises a number of finger members 30 that are carried by the outer annular member 26 and that extend radially inwardly from the outer annular member 26 into the central recess 28. The finger members 30 thus protrude from the outer annular member 26 into the central recess 28 thereby partly overhanging the wafer 20 with a free end 29. Each finger member 30 has a contact portion 32 that contacts the wafer 20 during the deposition process. The contact portion 32 is provided at a bottom surface 34 facing the wafer 20 during the deposition process and at a radially inwardly directed end 36 of the respective finger portion 30. The contact portion 32 has a hemispherical shape thereby establishing a point contact surface with the wafer 20.
  • FIG. 3 of the drawings also shows a finger member 30 from a top view. The finger member 30 comprises a flat planar member having a first portion 40 with an essentially rectangular horizontal cross-section and a second portion 42 that forms the radially inwardly directed end 36 of the finger portion 30 at which the contact portion 32 is provided. The second portion 42 has a width that is gradually decreasing from a first width value, which corresponds to the width value of the rectangular first portion, to a second width value, which is preferably zero, in the radially inwardly direction so that a rounded tip 44 is formed.
  • The outer annular member 26 has an annular first projection 48 and an annular second projection 50 that is located radially outward from of the first projection 48. The first and second annular projections 48, 50 are directed downward during the deposition process. In the preferred embodiment the numerous finger members 30 are connected to the outer annular member 26 by screw-mounting as shown in FIG. 4. Preferably, each finger member 30 is screw-mounted to the outer annular member 26 by means of two screws 52, wherein one of the screws 52 extends through the annular first projection 48 and the other of the screws 52 extends through the annular second projection 50 in a mounted state.
  • Each finger member 30 is mounted in an annular depression 54 defined by a step 55 and formed in the top surface of the outer annular member 26. The step 55 forms a stop for the finger members 30. The annular depression 54 is a planar depression that has a rectangular horizontal cross-section that extends radially inwardly from the step 55 all the way over the inner circumferential edge of the outer annular member 26. In the mounted state in which the finger members 30 are placed into the annular depression 54 in and mounted to the outer annular member 26, their rounded tips 44 (see FIG. 3) project inwardly from the outer annular member 26 and thus shadow the outer edge of the wafer 20. A top view of the wafer clamp assembly is shown in FIG. 5.
  • The wafer clamp assembly 24 of the present invention overcomes the problems that are involved with the use of a conventional clamp ring 10 as shown in FIG. 1:
  • Firstly, the wafer clamp assembly 24 according to the present invention does not cooperate with the wafer 20 so as to shadow it all around its outer circumferential edge, but it only shadows the wafer 20 at a few, selected areas where the free ends of the finger members 30 overhang the wafer 20. Thus, compared with the wafer clamp ring 10 of FIG. 1 with the wafer clamp assembly 24 of the present invention a minimized edge exclusion is achieved thereby increasing the wafer surface that can be used for the production of good electrical dies. This advantageous effect is increased due to the shape of the second portions 42 which form rounded tips 44 and thus further minimize the shadowed wafer surface.
  • Secondly, the surface contact of the wafer clamp assembly 24 with the wafer 20 is also drastically reduced during the deposition process. The wafer clamp assembly 24 of the present invention only contacts the wafer 20 at the few, selected contact surfaces where the contact portions 32 of the finger portions 30 contact the wafer surface, instead of the contact surface all around the circumferential edge of the wafer with the wafer clamp ring 10 of FIG. 1. Due to the hemispherical shape of the contact portions 32 the contact surfaces are point contacts, thereby further reducing the surface contact of the clamp assembly 24 with the wafer 10. Due to this minimized surface contact the heat flow from the heated wafer clamp assembly 24 to the wafer 20 is insignificant, so that the parts of the wafer 20 near the wafer clamp assembly 24 do not become overheated. Further, since the surface contact is limited to just a few point contacts, there are only very few positions where the wafer 20 and the wafer clamp assembly 24 are in close proximity, so that the risk of wafer clamp assembly/wafer sticking is clearly reduced compared to that of the clamp ring assemblies known from the prior art.
  • The wafer clamp ring assembly 24 of the present invention can be manufactured in a very simple manner from a standard wafer clamp ring as shown, for example, in FIG. 1 of the drawings. The inner circumferential edge of such a standard wafer clamp ring is milled out so as to remove the annular contact portion 14 and the portion 16 overhanging the annular contact portion 14 and so as to form the depression 54 at the inner circumferential edge of the clamp ring. After that, the finger members 30 that have had to be manufactured particularly for the improved wafer clamp assembly 24 according to the present invention are mounted to the milled-out wafer clamp by placing them into the depression 54 with predetermined distances and connecting them to the milled-out wafer clamp. The milled-out wafer clamp forms the outer annular member 26 of the wafer clamp assembly 24. In the preferred embodiment the finger members 30 are screw-mounted to the milled-out wafer clamp.

Claims (15)

What is claimed is:
1. A method fabricating dies on a wafer during a semiconductor process, said method comprising:
providing a plurality of substantially flat planar finger member mounted in an annular step defining a depression of a wafer clamp assembly;
providing an outer annular member, coupled to the plurality of finger members and the wafer clamp assembly, the outer annular member having
a) a first annular projection, and
b) a second annular projection;
contacting said wafer during the semiconductor fabrication process with the plurality of substantially flat finger members, wherein each of the finger members include:
a) a first portion with an essentially rectangular cross-section; and
b) a second portion, the second portion having a free end that includes a contact portion, the second portion having a rounded tip;
a central recess defined by the first annular projection,
wherein the central recess has a diameter that is greater than d, the diameter of the wafer, and
wherein the wafer can be clamped so that the wafer is not contacted by the outer annular member during a deposition process of the semiconductor,
wherein the contact portion overhangs the wafer to be clamped;
wherein the contact portion of each finger member overhangs the wafer to be clamped only at selected areas,
wherein the finger members contact the wafer only at the selected areas where the finger members overhang the wafer, thereby reducing an edge exclusion of the wafer, and
wherein the contact portion has a hemispherical shape thereby establishing a point contact surface with the wafer,
wherein said outer annular member has radially-spaced first and second annular projections directed downwardly therefrom; and said finger members are screw-mounted at said first and second annular projections; and
wherein said dies are manufactured on said wafer.
2. The method of claim 1, wherein said contact portion is downwardly directed.
3. The method of claim 2, wherein said second portion has a horizontal cross-section that decreases radially inwardly from a first width value which matches a width value of a corresponding essentially rectangular horizontal cross-section of said first portion, down to a second width value which is zero.
4. A method for fabricating an integrated circuit by holding a wafer during a semiconductor process, said method comprising:
providing an outer annular member defining a central recess that has a diameter slightly greater than the diameter of said wafer; and
contacting said wafer during a semiconductor fabrication process with a plurality of finger members carried by said outer annular member and extending radially inwardly from said outer annular member into said central recess; and
sputtering the wafer.
5. The method of claim 4, wherein each of said finger members has a contact portion that is provided at a bottom surface of said respective finger member facing said wafer and contacting said wafer during the semiconductor fabrication process.
6. The method of claim 5, wherein said contact portion contacting said wafer is provided at a radially inwardly directed end of said respective finger member.
7. The method of claim 5, wherein said contact portion contacting said wafer has a hemispherical shape.
8. The method of claim 7, wherein the contact portion is connected to a wafer clamp assembly.
9. The method of claim 8, wherein the wafer contains a plurality of dies.
10. The method of claim 9, wherein a lesser amount of heat flux from a wafer clamp assembly is produced through the finger members.
11. An method for fabricating dies on a wafer by holding the wafer during a semiconductor process, said method comprising:
providing an outer annular member means defining a central recess that has a diameter slightly greater than the diameter of said wafer; and
contacting said wafer during a semiconductor fabrication process with a plurality of finger members carried by said outer annular member and extending radially inwardly from said outer annular member into said central recess; and
sputtering the wafer, wherein a heat flows through the finger members during this sputtering; and
generating dies on the wafer.
12. The method of claim 11, wherein each of said finger members has a contact portion that is provided at a bottom surface of said respective finger member facing said wafer and contacting said wafer during the semiconductor fabrication process.
13. The method of claim 12, wherein said contact portion contacting said wafer is provided at a radially inwardly directed end of said respective finger member.
14. The method of claim 13, wherein said contact portion contacting said wafer has a hemispherical shape.
15. The method of claim 14, wherein the contact portion is connected to a wafer clamp assembly.
US14/451,936 2005-07-12 2014-08-05 Wafer clamp assembly for holding a wafer during a deposition process Abandoned US20140339074A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/451,936 US20140339074A1 (en) 2005-07-12 2014-08-05 Wafer clamp assembly for holding a wafer during a deposition process

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102005032547.5 2005-07-12
DE102005032547A DE102005032547B4 (en) 2005-07-12 2005-07-12 Wafer clamp assembly for receiving a wafer during a deposition process
US11/456,722 US8795479B2 (en) 2005-07-12 2006-07-11 Wafer clamp assembly for holding a wafer during a deposition process
US14/451,936 US20140339074A1 (en) 2005-07-12 2014-08-05 Wafer clamp assembly for holding a wafer during a deposition process

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/456,722 Continuation US8795479B2 (en) 2005-07-12 2006-07-11 Wafer clamp assembly for holding a wafer during a deposition process

Publications (1)

Publication Number Publication Date
US20140339074A1 true US20140339074A1 (en) 2014-11-20

Family

ID=37563448

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/456,722 Active 2028-06-28 US8795479B2 (en) 2005-07-12 2006-07-11 Wafer clamp assembly for holding a wafer during a deposition process
US14/451,936 Abandoned US20140339074A1 (en) 2005-07-12 2014-08-05 Wafer clamp assembly for holding a wafer during a deposition process

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US11/456,722 Active 2028-06-28 US8795479B2 (en) 2005-07-12 2006-07-11 Wafer clamp assembly for holding a wafer during a deposition process

Country Status (2)

Country Link
US (2) US8795479B2 (en)
DE (1) DE102005032547B4 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107305853A (en) * 2016-04-18 2017-10-31 北京北方华创微电子装备有限公司 Reaction chamber

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2492839C (en) 2002-08-12 2011-02-01 Exxonmobil Chemical Patents Inc. Plasticized polyolefin compositions
US8652260B2 (en) * 2008-08-08 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for holding semiconductor wafers
CN105655281B (en) * 2014-11-13 2019-01-18 北京北方华创微电子装备有限公司 Pressure ring, bogey and semiconductor processing equipment
US20210054497A1 (en) * 2019-08-19 2021-02-25 Oem Group, Llc Systems and methods for a lift and rotate wafer handling process
US11996315B2 (en) * 2020-11-18 2024-05-28 Applied Materials, Inc. Thin substrate handling via edge clamping
USD1038049S1 (en) 2020-11-18 2024-08-06 Applied Materials, Inc. Cover ring for use in semiconductor processing chamber
CN112736013B (en) * 2020-12-18 2024-02-27 北京北方华创微电子装备有限公司 Bearing device and process chamber

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US6478914B1 (en) * 2000-06-09 2002-11-12 Micron Technology, Inc. Method for attaching web-based polishing materials together on a polishing tool

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02268427A (en) * 1989-04-11 1990-11-02 Tokyo Electron Ltd Plasma processor
US5316278A (en) * 1992-09-18 1994-05-31 Applied Materials, Inc. Clamping ring apparatus for processing semiconductor wafers
EP0742579A2 (en) * 1995-05-11 1996-11-13 Applied Materials, Inc. A method and apparatus for concentrating plasma on a substrate surface during processing
US5860640A (en) * 1995-11-29 1999-01-19 Applied Materials, Inc. Semiconductor wafer alignment member and clamp ring
US6008134A (en) * 1997-02-05 1999-12-28 Motorola, Inc. Process for forming semiconductor device using beveled clamp fingers in an etching system
US6171453B1 (en) * 1998-12-02 2001-01-09 Taiwan Semiconductor Manufacturing Co., Ltd Alignment mark shielding ring and method of using
US6652656B2 (en) * 2001-07-24 2003-11-25 Tokyo Electron Limited Semiconductor wafer holding assembly
US20060207508A1 (en) * 2005-03-16 2006-09-21 Applied Materials, Inc. Film deposition using a spring loaded contact finger type shadow frame

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US6478914B1 (en) * 2000-06-09 2002-11-12 Micron Technology, Inc. Method for attaching web-based polishing materials together on a polishing tool

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107305853A (en) * 2016-04-18 2017-10-31 北京北方华创微电子装备有限公司 Reaction chamber

Also Published As

Publication number Publication date
US8795479B2 (en) 2014-08-05
DE102005032547B4 (en) 2010-01-07
DE102005032547A1 (en) 2007-01-18
US20070012561A1 (en) 2007-01-18

Similar Documents

Publication Publication Date Title
US20140339074A1 (en) Wafer clamp assembly for holding a wafer during a deposition process
US6761771B2 (en) Semiconductor substrate-supporting apparatus
US7501161B2 (en) Methods and apparatus for reducing arcing during plasma processing
TWI473197B (en) Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
TWI678761B (en) Substrate transfer mechanisms
US5484011A (en) Method of heating and cooling a wafer during semiconductor processing
EP0452779B1 (en) Physical vapor deposition clamping mechanism
KR20120120272A (en) Shadow ring for modifying wafer edge and bevel deposition
US6743296B2 (en) Apparatus and method for self-centering a wafer in a sputter chamber
JP2010527152A (en) Substrate cleaning chamber, cleaning and conditioning method
JP6434502B2 (en) Curved RF electrode for improved CMAX
CN110050326B (en) Member for semiconductor manufacture including SiC vapor deposition layer and method for manufacturing the same
WO1992013115A1 (en) Target for cathode sputtering
JP2001073135A (en) Device for treating substrate
EP1184894B1 (en) Method of operating a susceptor for semiconductor wafers
JP2019533309A (en) Heating device with controlled thermal contact
US6165276A (en) Apparatus for preventing plasma etching of a wafer clamp in semiconductor fabrication processes
US6214413B1 (en) Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
CN109256357B (en) High temperature electrostatic chuck
KR100754007B1 (en) Film forming device
CN110073466A (en) Use semiconductors manufacture component production method and the manufacturing device of fixture
US6186779B1 (en) Wafer clamp for a heater assembly
TWI414016B (en) Apparatus for performing a plasma etching process
US20030106196A1 (en) Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
JPH05347362A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION

AS Assignment

Owner name: TEXAS INSTRUMENTS INCORPORATED, TEXAS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TEXAS INSTRUMENTS DEUTSCHLAND GMBH;REEL/FRAME:055314/0255

Effective date: 20210215