US20140252320A1 - Full-band and high-cri organic light-emitting diode - Google Patents
Full-band and high-cri organic light-emitting diode Download PDFInfo
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- US20140252320A1 US20140252320A1 US13/869,944 US201313869944A US2014252320A1 US 20140252320 A1 US20140252320 A1 US 20140252320A1 US 201313869944 A US201313869944 A US 201313869944A US 2014252320 A1 US2014252320 A1 US 2014252320A1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H—ELECTRICITY
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
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- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
Definitions
- the present invention relates to an organic light-emitting diode (OLED), and more particularly to a full-band and high-CRI organic light-emitting diode.
- OLED organic light-emitting diode
- OLED organic light emitting diode
- ITO transparent indium tin oxide
- metal electrode is vapor-deposited thereon to form the self-luminescent OLED apparatus. Due to high brightness, fast response speed, light weight, compactness, true color, no difference in viewing angles, no need of liquid crystal display (LCD) type backlight plates as well as a saving in light sources and low power consumption, it has become a new generation display.
- LCD liquid crystal display
- the conventional OLED device is often added to other intermediate layers, such as an electron transport layer and a hole transport layer, so as to enhance the efficiency of the OLED device.
- FIG. 1 which is a structural drawing of a conventional OLED device.
- the conventional OLED device 1 ′ includes a cathode 11 ′, an electron injection layer 12 ′, an electron transport layer 13 ′, a first light-emitting layer 14 ′, a second light-emitting layer 15 ′, a hole transport layer 16 ′, a hole injection layer 17 ′, and an anode 18 ′.
- the above-mentioned conventional OLED device 1 ′ is a high efficiency OLED device; however, it is a white light OLED device and performs a poor color rendering index (CRI). For above reasons, the OLED device 1 ′ is unsuitable for being a long-term used light source.
- the primary objective of the present invention is to provide a full-band and high-CRI organic light-emitting diode, in which the full-band and high-CRI organic light-emitting diode comprises a first conductive layer, at least one first carrier transition layer, a plurality of light-emitting layers, at least one second carrier transition layer, and a second conductive layer, and particularly a plurality of a plurality of dyes are doped in the light-emitting layers for making the light-emitting layers emit a plurality of blackbody radiation complementary lights.
- the chromaticity coordinates of the blackbody radiation complementary lights surround to a specific area on 1931 CIE (Commission International de'Eclairage)Chromaticity Diagram, moreover, the specific area fully encloses the Planck's locus on 1931 CIE Chromaticity Diagram, such that the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.
- 1931 CIE Commission International de'Eclairage
- the inventor of the present invention provides a full-band and high-CRI organic light-emitting diode, comprising: a first conductive layer; at least one first carrier transition layer, being formed on the first conductive layer; a plurality of light-emitting layers, being formed on the first carrier transition layer; at least one second carrier transition layer, being formed on the light-emitting layer; and a second conductive layer, being formed on the second carrier transition layer.
- a plurality of dyes are doped in the light-emitting layers, so as to make the light-emitting layers emit a plurality of blackbody radiation complementary lights, therefore the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.
- FIG. 1 is a structural drawing of a conventional OLED device
- FIG. 2 is a framework view of a full-band and high-CRI organic light-emitting diode according to the present invention
- FIG. 3 is a first experimental framework of the full-band and high-CRI organic light-emitting diode
- FIG. 4 is a related composition material table of the full-band and high-CRI organic light-emitting diode
- FIG. 5 is a power spectrum of the full-band and high-CRI light emitted by the full-band and high-CRI organic light-emitting diode
- FIG. 6 is a 1931 CIE (Commission International de'Eclairage) chromaticity diagram of the blackbody radiation complementary lights
- FIG. 7 is a composition material table of the second experimental framework for the full-band and high-CRI organic light-emitting diode
- FIG. 8 is a power spectrum of the full-band and high-CRI light emitted by the full-band and high-CRI organic light-emitting diode
- FIG. 9 is a 1931 CIE chromaticity diagram of the blackbody radiation complementary lights.
- FIG. 10 is an energy band framework of a second embodiment of the full-band and high-CRI organic light-emitting diode according to the present invention.
- the a full-band and high-CRI organic light-emitting diode 1 includes: a first conductive layer 11 , at least one first carrier transition layer, a plurality of light-emitting layers, at least one second carrier transition layer, and a second conductive layer 19 , wherein the first conductive layer 11 is an anode and the second conductive layer 19 is a cathode.
- the first carrier transition layer is formed on the first conductive layer 11 and consists of a hole-injecting layer 12 and a hole-transporting layer 13 .
- the light-emitting layers are formed on the hole-transporting layer 13 and includes a first light-emitting layer 14 , a second light-emitting layer 15 and a third light-emitting layer 16 .
- the second carrier transition layer is formed on the third light-emitting layer 16 and consists of an electron-transporting layer 17 and an electron-injecting layer 18 .
- the second conductive layer 19 is formed on the electron-injecting layer 18 .
- the full-band and high-CRI organic light-emitting diode 1 shown in FIG. 2 uses the hole-injecting layer 12 and the hole-transporting layer 13 as the first carrier transition layer
- the hole-injecting layer 12 and the hole-transporting layer 13 does not the limited embodiment for the first carrier transition layer.
- the first carrier transition layer can also be a single layer of hole injection or a single layer of hole transportation.
- the electron-injecting layer 18 and the electron -transporting layer 17 does not the limited embodiment for the second carrier transition layer; the first carrier transition layer can also be a single layer of electron injection or a single layer of electron transportation.
- the number of the light-emitting layers does not be limited to “ 3 ”.
- a plurality of dyes are doped in the light-emitting layers ( 14 , 15 , 16 ) for making the light-emitting layers emit a plurality of blackbody radiation complementary lights, therefore the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.
- FIG. 4 there are shown a first experimental framework and the related composition material table of the full-band and high-CRI organic light-emitting diode.
- the first experimental framework uses ITO (indium tin oxide) as the anode (i.e.
- the first experimental framework uses HATCN (Hexaazatriphenylene-hexacabonitrile), TAPC (1,1-Bis[4-[N,N′-di(p-tolyl) amino]phenyl]cyclohexane), TDAF (2,7-Bis[9,9-di(4-Methylphenyl)-fluoren-2-yl]-9,9-di(4-M), Spiro-2CBP (2,7-Bis(9-carbazolyl)-9,9-sspirobifluorene), Dczppy (2,6-bis[3′-(N-carbazole)phenyl]pyridine), BmPyPb (1,3-bis(3,5-dipyrid-3-yl-phenyl)benzene), LiF (lithium fluoride), Al (aluminum)
- the weight percentage (wt %) of the first light-emitting layer 14 is 0.2, and the first conductive layer 14 is able to emit a blackbody radiation complementary light with the color of deep-blue.
- the second light-emitting layer 15 is doped with an orange-red dye, a yellow dye and a green dye, wherein the weight percentages (wt %) of the orange-red dye, the yellow dye and the green dye are 0.17, 0.24 and 0.42, respectively, such that the second light-emitting layer 15 can emit a blackbody radiation complementary light with the color of orange-red, a blackbody radiation complementary light with the color of yellow, and a blackbody radiation complementary light with the color of green.
- the third light-emitting layer 16 is doped with a sky-blue dye and a deep-red dye, wherein the weight percentages (wt %) of the sky-blue dye and the deep-red dye are 0.18 and 0.41, respectively; so that, the third light-emitting layer 16 may emit a blackbody radiation complementary light with the color of sky-blue and a blackbody radiation complementary light with the color of deep-red.
- FIG. 5 there is shown a power spectrum of the full-band and high-CRI light emitted by the full-band and high-CRI organic light-emitting diode.
- FIG. 6 which illustrates a 1931 CIE (Commission International de'Eclairage) Chromaticity Diagram of the blackbody radiation complementary lights.
- the blackbody radiation complementary lights of deep-blue, orange-red, yellow, green, sky-blue, and deep-red mix to each other and then become the full-band and high-CRI light having the CRI (Color Rendering Index) of 92.2 and the CT (Color Temperature) of 3639K.
- CRI Color Rendering Index
- the CIE coordinates of the blackbody radiation complementary lights of deep-blue, orange-red, yellow, green, sky-blue, and deep-red are (0.17, 0.07), (0.57, 0.43), (0.49, 0.51), (0.29, 0.58), (0.18, 0.34), and (0.64, 0.36), respectively.
- the above-mentioned 6 CIE coordinates surround to a specific area, and the specific area fully encloses the Planck's locus on 1931 CIE chromaticity diagram, wherein the Planck's locus is also called blackbody radiation curve.
- FIG. 7 there is shown a composition material table of the second experimental framework for the full-band and high-CRI organic light-emitting diode.
- the weight percentage of the first light-emitting layer 14 is 0 . 32 .
- the second light-emitting layer 15 is doped with an orange-red dye, a yellow dye and a green dye, wherein the weight percentages (wt %) of the orange-red dye, the yellow dye and the green dye are 0.24, 0.2 and 0.6, respectively.
- the third light-emitting layer 16 is doped with a sky-blue dye and a deep-red dye, wherein the weight percentages (wt %) of the sky-blue dye and the deep-red dye are 0 and 0.47.
- FIG. 8 there is shown a power spectrum of the full-band and high-CRI light emitted by the full-band and high-CRI organic light-emitting diode.
- FIG. 9 which illustrates a 1931 CIE chromaticity diagram of the blackbody radiation complementary lights.
- the blackbody radiation complementary lights of deep-blue, orange-red, yellow, green, and deep-red mix to each other and then become the full-band and high-CRI light having the CRI (Color Rendering Index) of 90.4 and the CT (Color Temperature) of 3546K.
- the CIE coordinates of the blackbody radiation complementary lights of deep-blue, orange-red, yellow, green, and deep-red are (0.17, 0.07), (0.57, 0.43), (0.49, 0.51), (0.29, 0.58), and (0.64, 0.36), respectively.
- the above-mentioned 5 CIE coordinates surround to a specific area, and the specific area fully encloses the Planck's locus on 1931 CIE chromaticity diagram.
- the full-band and high-CRI organic light-emitting diode 1 of the present invention are proven of being actually practicable, and able to emit a full-band and high-CRI light, wherein the full-band and high-CRI light may be a low-CT orange-red light, a high-CT white light, or others color light with different CT.
- the full-band and high-CRI organic light-emitting diode 1 of the present invention can emit the full-band and high-CRI light as long as the specific area surrounded by the CIE coordinates of the blackbody radiation complementary lights fully encloses the Planck's locus on 1931 CIE chromaticity diagram, wherein, it does not limit the number of the blackbody radiation complementary lights to “6”, “5” or “4”. Moreover, through the experiment data, it is able to further confirm that the full-band and high-CRI light would be much better if all the blackbody radiation complementary lights reveal a single peak power spectrum.
- the full-band and high-CRI organic light-emitting diode 1 of the present invention further includes a second embodiment.
- FIG. 10 illustrates an energy band framework of a second embodiment of the full-band and high-CRI organic light-emitting diode according to the present invention.
- the second embodiment of the full-band and high-CRI organic light-emitting diode 1 further includes a carrier modulation layer CML, wherein the carrier modulation layer CML is disposed between the first light-emitting layer 14 and the second light-emitting layer 15 , used for modulating the light intensity of the first light-emitting layer 14 and the second light-emitting layer 15 .
- the carrier modulation layer CML does not limit to be disposed between the first light-emitting layer 14 and the second light-emitting layer 15 in the second embodiment, it may be also disposed between the second light-emitting layer 15 and the third light-emitting layer 16 for intensity modulation purpose.
- the full-band and high-CRI organic light-emitting diode of the present invention has been completely introduced and disclosed; Moreover, the practicability and the technology feature have also been proven by various experiment data.
- the present invention has the following advantages:
- a plurality of dyes are doped in a plurality of light-emitting layers for making the light-emitting layers emit a plurality of blackbody radiation complementary lights, so as to facilitate the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.
- the CIE coordinates of the blackbody radiation complementary lights surround to a specific area on 1931 CIE chromaticity diagram, and the specific area fully encloses the Planck's locus on 1931 CIE chromaticity diagram, such that the blackbody radiation complementary lights can mix to each other and become the full-band and high-CRI light.
Abstract
Description
- 1. Field of the Invention
- The present invention relates to an organic light-emitting diode (OLED), and more particularly to a full-band and high-CRI organic light-emitting diode.
- 2. Description of the Prior Art
- An organic light emitting diode (OLED) was invented by C. W. Tang and S. A. VanSlyk et al. of Eastman Kodak Company in 1987 and manufactured by a vacuum evaporation method. A hole transporting material and an electron transporting material (such as Alq3) are respectively deposited on a transparent indium tin oxide (abbreviated as ITO) glass, and then a metal electrode is vapor-deposited thereon to form the self-luminescent OLED apparatus. Due to high brightness, fast response speed, light weight, compactness, true color, no difference in viewing angles, no need of liquid crystal display (LCD) type backlight plates as well as a saving in light sources and low power consumption, it has become a new generation display.
- In addition to light-emitting layers, the conventional OLED device is often added to other intermediate layers, such as an electron transport layer and a hole transport layer, so as to enhance the efficiency of the OLED device. Referring to
FIG. 1 , which is a structural drawing of a conventional OLED device. As shown inFIG. 1 , theconventional OLED device 1′ includes acathode 11′, anelectron injection layer 12′, anelectron transport layer 13′, a first light-emitting layer 14′, a second light-emitting layer 15′, ahole transport layer 16′, ahole injection layer 17′, and ananode 18′. - The above-mentioned
conventional OLED device 1′ is a high efficiency OLED device; however, it is a white light OLED device and performs a poor color rendering index (CRI). For above reasons, theOLED device 1′ is unsuitable for being a long-term used light source. - Accordingly, in view of the conventional OLED devices still have shortcomings and drawbacks, the inventor of the present application has made great efforts to make inventive research thereon and eventually provided a full-band and high-CRI organic light-emitting diode.
- The primary objective of the present invention is to provide a full-band and high-CRI organic light-emitting diode, in which the full-band and high-CRI organic light-emitting diode comprises a first conductive layer, at least one first carrier transition layer, a plurality of light-emitting layers, at least one second carrier transition layer, and a second conductive layer, and particularly a plurality of a plurality of dyes are doped in the light-emitting layers for making the light-emitting layers emit a plurality of blackbody radiation complementary lights. Therefore, the chromaticity coordinates of the blackbody radiation complementary lights surround to a specific area on 1931 CIE (Commission International de'Eclairage)Chromaticity Diagram, moreover, the specific area fully encloses the Planck's locus on 1931 CIE Chromaticity Diagram, such that the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.
- Accordingly, to achieve the primary objective of the present invention, the inventor of the present invention provides a full-band and high-CRI organic light-emitting diode, comprising: a first conductive layer; at least one first carrier transition layer, being formed on the first conductive layer; a plurality of light-emitting layers, being formed on the first carrier transition layer; at least one second carrier transition layer, being formed on the light-emitting layer; and a second conductive layer, being formed on the second carrier transition layer. Wherein a plurality of dyes are doped in the light-emitting layers, so as to make the light-emitting layers emit a plurality of blackbody radiation complementary lights, therefore the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.
- The invention as well as a preferred mode of use and advantages thereof will be best understood by referring to the following detailed description of an illustrative embodiment in conjunction with the accompanying drawings, wherein:
-
FIG. 1 is a structural drawing of a conventional OLED device; -
FIG. 2 is a framework view of a full-band and high-CRI organic light-emitting diode according to the present invention; -
FIG. 3 is a first experimental framework of the full-band and high-CRI organic light-emitting diode; -
FIG. 4 is a related composition material table of the full-band and high-CRI organic light-emitting diode; -
FIG. 5 is a power spectrum of the full-band and high-CRI light emitted by the full-band and high-CRI organic light-emitting diode; -
FIG. 6 is a 1931 CIE (Commission International de'Eclairage) chromaticity diagram of the blackbody radiation complementary lights; -
FIG. 7 is a composition material table of the second experimental framework for the full-band and high-CRI organic light-emitting diode; -
FIG. 8 is a power spectrum of the full-band and high-CRI light emitted by the full-band and high-CRI organic light-emitting diode; -
FIG. 9 is a 1931 CIE chromaticity diagram of the blackbody radiation complementary lights; and -
FIG. 10 is an energy band framework of a second embodiment of the full-band and high-CRI organic light-emitting diode according to the present invention. - To more clearly describe a full-band and high-CRI organic light-emitting diode according to the present invention, embodiments of the present invention will be described in detail with reference to the attached drawings hereinafter.
- Please refer to
FIG. 2 , which illustrates a framework view of a full-band and high-CRI organic light-emitting diode according to the present invention. As shown inFIG. 2 , the a full-band and high-CRI organic light-emitting diode 1 includes: a firstconductive layer 11, at least one first carrier transition layer, a plurality of light-emitting layers, at least one second carrier transition layer, and a secondconductive layer 19, wherein the firstconductive layer 11 is an anode and the secondconductive layer 19 is a cathode. - In some exemplary embodiments, as shown in
FIG. 2 , the first carrier transition layer is formed on the firstconductive layer 11 and consists of a hole-injectinglayer 12 and a hole-transportinglayer 13. The light-emitting layers are formed on the hole-transportinglayer 13 and includes a first light-emittinglayer 14, a second light-emitting layer 15 and a third light-emitting layer 16. Opposite to the first carrier transition layer, the second carrier transition layer is formed on the third light-emitting layer 16 and consists of an electron-transporting layer 17 and an electron-injectinglayer 18. Furthermore, the secondconductive layer 19 is formed on the electron-injectinglayer 18. - It needs to further explain that, although the full-band and high-CRI organic light-
emitting diode 1 shown inFIG. 2 uses the hole-injectinglayer 12 and the hole-transporting layer 13 as the first carrier transition layer, the hole-injectinglayer 12 and the hole-transporting layer 13 does not the limited embodiment for the first carrier transition layer. In others exemplary embodiment, the first carrier transition layer can also be a single layer of hole injection or a single layer of hole transportation. Similarly, the electron-injectinglayer 18 and the electron -transporting layer 17 does not the limited embodiment for the second carrier transition layer; the first carrier transition layer can also be a single layer of electron injection or a single layer of electron transportation. Moreover, the number of the light-emitting layers does not be limited to “3”. Particularly, in the present invention, a plurality of dyes are doped in the light-emitting layers (14, 15, 16) for making the light-emitting layers emit a plurality of blackbody radiation complementary lights, therefore the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light. - For further introducing the framework and technology feature of the full-band and high-CRI organic light-
emitting diode 1, various experiment data will be presented in following paragraphs. Referring toFIG. 2 again, and please simultaneously refer toFIG. 3 and -
FIG. 4 , there are shown a first experimental framework and the related composition material table of the full-band and high-CRI organic light-emitting diode. As shown inFIG. 3 , the first experimental framework uses ITO (indium tin oxide) as the anode (i.e. the first conductive layer 11) of the full-band and high-CRI organic light-emitting diode 1; moreover, the first experimental framework uses HATCN (Hexaazatriphenylene-hexacabonitrile), TAPC (1,1-Bis[4-[N,N′-di(p-tolyl) amino]phenyl]cyclohexane), TDAF (2,7-Bis[9,9-di(4-Methylphenyl)-fluoren-2-yl]-9,9-di(4-M), Spiro-2CBP (2,7-Bis(9-carbazolyl)-9,9-sspirobifluorene), Dczppy (2,6-bis[3′-(N-carbazole)phenyl]pyridine), BmPyPb (1,3-bis(3,5-dipyrid-3-yl-phenyl)benzene), LiF (lithium fluoride), Al (aluminum) as the hole-injectinglayer 12, the hole-transportinglayer 13, the first light-emittinglayer 14, the second light-emitting layer 15, the third light-emitting layer 16, the electron-transporting layer 17, the electron-injectinglayer 18, and the second conductive layer 19 (i.e., cathode), respectively. - In the first experimental framework, as shown in
FIG. 4 , the weight percentage (wt %) of the first light-emitting layer 14 is 0.2, and the firstconductive layer 14 is able to emit a blackbody radiation complementary light with the color of deep-blue. The second light-emittinglayer 15 is doped with an orange-red dye, a yellow dye and a green dye, wherein the weight percentages (wt %) of the orange-red dye, the yellow dye and the green dye are 0.17, 0.24 and 0.42, respectively, such that the second light-emittinglayer 15 can emit a blackbody radiation complementary light with the color of orange-red, a blackbody radiation complementary light with the color of yellow, and a blackbody radiation complementary light with the color of green. Besides, the third light-emittinglayer 16 is doped with a sky-blue dye and a deep-red dye, wherein the weight percentages (wt %) of the sky-blue dye and the deep-red dye are 0.18 and 0.41, respectively; so that, the third light-emittinglayer 16 may emit a blackbody radiation complementary light with the color of sky-blue and a blackbody radiation complementary light with the color of deep-red. - Please continuously refer to
FIG. 5 , there is shown a power spectrum of the full-band and high-CRI light emitted by the full-band and high-CRI organic light-emitting diode. Moreover, please refer toFIG. 6 , which illustrates a 1931 CIE (Commission International de'Eclairage) Chromaticity Diagram of the blackbody radiation complementary lights. As shown inFIGS. 4 and 5 , the blackbody radiation complementary lights of deep-blue, orange-red, yellow, green, sky-blue, and deep-red mix to each other and then become the full-band and high-CRI light having the CRI (Color Rendering Index) of 92.2 and the CT (Color Temperature) of 3639K. - In addition, the CIE coordinates of the blackbody radiation complementary lights of deep-blue, orange-red, yellow, green, sky-blue, and deep-red are (0.17, 0.07), (0.57, 0.43), (0.49, 0.51), (0.29, 0.58), (0.18, 0.34), and (0.64, 0.36), respectively. In the 1931 CIE chromaticity diagram of
FIG. 6 , the above-mentioned 6 CIE coordinates surround to a specific area, and the specific area fully encloses the Planck's locus on 1931 CIE chromaticity diagram, wherein the Planck's locus is also called blackbody radiation curve. - Next, a second experimental framework for the full-band and high-CRI organic light-
emitting diode 1 of the present invention will be introduced. Please refer toFIG. 7 , there is shown a composition material table of the second experimental framework for the full-band and high-CRI organic light-emitting diode. As shown inFIG. 7 and differing from above-mentioned first experimental framework, the weight percentage of the first light-emitting layer 14 is 0.32. In addition, the second light-emittinglayer 15 is doped with an orange-red dye, a yellow dye and a green dye, wherein the weight percentages (wt %) of the orange-red dye, the yellow dye and the green dye are 0.24, 0.2 and 0.6, respectively. Moreover, the third light-emittinglayer 16 is doped with a sky-blue dye and a deep-red dye, wherein the weight percentages (wt %) of the sky-blue dye and the deep-red dye are 0 and 0.47. - Please continuously refer to
FIG. 8 , there is shown a power spectrum of the full-band and high-CRI light emitted by the full-band and high-CRI organic light-emitting diode. Moreover, please refer toFIG. 9 , which illustrates a 1931 CIE chromaticity diagram of the blackbody radiation complementary lights. As shown inFIGS. 7 and 8 , the blackbody radiation complementary lights of deep-blue, orange-red, yellow, green, and deep-red mix to each other and then become the full-band and high-CRI light having the CRI (Color Rendering Index) of 90.4 and the CT (Color Temperature) of 3546K. - In addition, the CIE coordinates of the blackbody radiation complementary lights of deep-blue, orange-red, yellow, green, and deep-red are (0.17, 0.07), (0.57, 0.43), (0.49, 0.51), (0.29, 0.58), and (0.64, 0.36), respectively. In the 1931 CIE chromaticity diagram of
FIG. 6 , the above-mentioned 5 CIE coordinates surround to a specific area, and the specific area fully encloses the Planck's locus on 1931 CIE chromaticity diagram. - Thus, through the experiment data of the first and second experimental frameworks, the full-band and high-CRI organic light-emitting
diode 1 of the present invention are proven of being actually practicable, and able to emit a full-band and high-CRI light, wherein the full-band and high-CRI light may be a low-CT orange-red light, a high-CT white light, or others color light with different CT. The most important is that, the full-band and high-CRI organic light-emittingdiode 1 of the present invention can emit the full-band and high-CRI light as long as the specific area surrounded by the CIE coordinates of the blackbody radiation complementary lights fully encloses the Planck's locus on 1931 CIE chromaticity diagram, wherein, it does not limit the number of the blackbody radiation complementary lights to “6”, “5” or “4”. Moreover, through the experiment data, it is able to further confirm that the full-band and high-CRI light would be much better if all the blackbody radiation complementary lights reveal a single peak power spectrum. - The full-band and high-CRI organic light-emitting
diode 1 of the present invention further includes a second embodiment. Please refer toFIG. 10 , which illustrates an energy band framework of a second embodiment of the full-band and high-CRI organic light-emitting diode according to the present invention. As shown inFIG. 10 and differing from above-mentioned first embodiment, the second embodiment of the full-band and high-CRI organic light-emittingdiode 1 further includes a carrier modulation layer CML, wherein the carrier modulation layer CML is disposed between the first light-emittinglayer 14 and the second light-emittinglayer 15, used for modulating the light intensity of the first light-emittinglayer 14 and the second light-emittinglayer 15. Herein, it needs to particularly explain that, the carrier modulation layer CML does not limit to be disposed between the first light-emittinglayer 14 and the second light-emittinglayer 15 in the second embodiment, it may be also disposed between the second light-emittinglayer 15 and the third light-emittinglayer 16 for intensity modulation purpose. - Thus, through the descriptions, the full-band and high-CRI organic light-emitting diode of the present invention has been completely introduced and disclosed; Moreover, the practicability and the technology feature have also been proven by various experiment data. In summary, the present invention has the following advantages:
- 1. In the present invention, a plurality of dyes are doped in a plurality of light-emitting layers for making the light-emitting layers emit a plurality of blackbody radiation complementary lights, so as to facilitate the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.
- 2. Inheriting to
above point 1, moreover, the CIE coordinates of the blackbody radiation complementary lights surround to a specific area on 1931 CIE chromaticity diagram, and the specific area fully encloses the Planck's locus on 1931 CIE chromaticity diagram, such that the blackbody radiation complementary lights can mix to each other and become the full-band and high-CRI light. - 3. Besides, through various experiment data, it is able to confirm that the full-band and high-CRI light would be much better if all the blackbody radiation complementary lights reveal a single peak power spectrum.
- The above description is made on embodiments of the present invention. However, the embodiments are not intended to limit scope of the present invention, and all equivalent implementations or alterations within the spirit of the present invention still fall within the scope of the present invention.
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