US20140124244A1 - Conductive plate and film exhibiting electric anisotropy - Google Patents
Conductive plate and film exhibiting electric anisotropy Download PDFInfo
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- US20140124244A1 US20140124244A1 US14/152,176 US201414152176A US2014124244A1 US 20140124244 A1 US20140124244 A1 US 20140124244A1 US 201414152176 A US201414152176 A US 201414152176A US 2014124244 A1 US2014124244 A1 US 2014124244A1
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Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y99/00—Subject matter not provided for in other groups of this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/70—Nanostructure
- Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Definitions
- the present disclosure relates to a method for making a conductive film and a a conductive plate, and more particularly to a method involving removing a nanomaterial from a substrate and stretching the nanomaterial so as to form a conductive film exhibiting electric anisotropy.
- Transparent conductive plates having transmittance and conductivity are widely used in flat panel displays (FPD), such as liquid crystal displays (LCD) or touch panels.
- FPD flat panel displays
- LCD liquid crystal displays
- a conductive plate has a transparent substrate made from glass or polyethylene terephthalate (PET), and a transparent conductive film (TCF) formed thereon.
- the transparent conductive film (TCF) is normally formed by sputtering techniques, and can be made from indium tin oxide (ITO), tin oxide (SnO.sub.2), or zinc oxide (ZnO).
- ITO indium tin oxide
- SnO.sub.2 tin oxide
- ZnO zinc oxide
- ITO is best qualified for commercial use in manufacturing the conductive plate by virtue of its high transmittance and high conductivity.
- Manufacture of large size conductive plates requires an expensive large size sputtering or deposition reactor for forming the ITO film on the transparent substrate.
- a method for making a conductive film exhibiting electric anisotropy comprises (A) forming a nanomaterial on a substrate, the nanomaterial having a cluster of interconnected nanounits, each of the nanounits being substantially transverse to the substrate and having one end bonded to the substrate; and (B) stretching the nanounits along a first direction to remove the nanomaterial from the substrate so as to form a conductive film having strings of interconnected nanounits, and stretching the strings of the interconnected nanounits, wherein the nanounits of the strings substantially extend in the first direction.
- a method for making a conductive plate that comprises (a) stretching a nanomaterial to move the nanomaterial so as to form a conductive film exhibiting electric anisotropy; and (b) attaching the conductive film to a second substrate.
- a conductive plate that comprises a substrate; and a conductive film attached to the substrate and exhibiting electric anisotropy.
- the conductive film is formed by stretching a nanomaterial, which is removed from another substrate on which the nanomaterial is deposited.
- FIG. 1A is a perspective view of an exemplary embodiment of a conductive film of the present disclosure with a scanning electron microscope (SEM) cross-sectional image illustrating the structure of a nanomaterial formed on a first substrate.
- SEM scanning electron microscope
- FIG. 1B is a perspective view of the exemplary embodiment of the conductive film of the present disclosure, illustrating how strings of interconnected nanounits are stretched along a first direction “X” according to the method of this disclosure.
- FIG. 1C is a schematic side view with an SEM cross-sectional image illustrating the structure of the conductive film formed according to the method of the present disclosure.
- FIG. 1D is a top view of FIG. 1C with an SEM image, illustrating the structure of the conductive film before stretched along a second direction “Y”.
- FIG. 1E is a top view of FIG. 1D with an SEM image, illustrating the structure of the conductive film after stretched along the second direction “Y”.
- FIG. 2 is a sectional side view of an exemplary embodiment of a conductive plate of the present disclosure.
- the exemplary embodiment of a method for making a conductive film 200 exhibiting electric anisotropy of the present disclosure includes: (A) forming a nanomaterial 210 on a first substrate 300 using a deposition reactor (not shown), the nanomaterial 210 having a cluster of interconnected nanounits 202 , each of the nanounits 202 being substantially transverse to the first substrate 300 and having one end bonded to the first substrate 300 (see FIG.
- the nanounits 202 are anisotropic in shape.
- the nanounits 202 can be carbon nanotubes (CNTs), carbon nanotube bundles, or nanoparticles formed by arc discharge techniques, laser vaporization techniques, or chemical vapor deposition (CVD) techniques, for example.
- the first substrate 300 can be made from silicon, graphite, or quartz, for example.
- the nanounits 210 include the nanounit 202 a, the nanounit 202 b, and the nanounit 202 c.
- the nanounits 202 a is stretched along a first direction “X” to remove the nanounits 202 a from the first substrate 300
- the nanounits 202 b which is adjacent to the nanounit 202 a, is also peeled from the first substrate 300 by the nanounit 202 a through a Van der Waals' interaction therebetween.
- the nanounit 202 c which is adjacent to the nanounit 202 b, is also peeled from the first substrate 300 by the nanounit 202 b through a Van der Waals' interaction therebetween when the nanounit 202 b is stretched.
- the nanounit 202 a, the nanounit 202 b, and the nanounit 202 c are serially connected to form a string 220 of interconnected nanounits 220 .
- the nanounits 202 on the first substrate 300 can be removed substantially in a row by row manner so as to form strings of interconnected nanounits 220 , that consists the conductive film 200 exhibiting electric anisotropy.
- the second direction “Y” is substantially distinct from the first direction “X” (see FIG. 1B ).
- the conductive film 200 thus formed has the strings 220 of the interconnected nanounits 202 (see FIG. 1C ) extending in the first direction “X”.
- electrical anisotropy used herein may be referred to as “conductive anisotropy” or “resistivity anisotropy”, and is a property having different conductivities or resistivities in different directions.
- the conductivity/resistivity of the conductive film 200 in the first direction “X” is higher/lower than the conductivity/resistivity of the conductive film 200 in the second direction “Y”.
- the method further includes stretching the conductive film 200 formed in step (B) along the second direction “Y” so as to enlarge an area of the conductive film 200 (see FIGS. 1D to 1E ) and so as to increase a transmittance of the conductive film 200 .
- the stretching of the conductive film 200 in the second direction “Y” can be performed by one of mechanical stretching and blowing stretching.
- the stretching of the conductive film 200 in the second direction “Y” is performed by mechanical stretching.
- the mechanical stretching is conducted by attaching the conductive film 200 to a plurality of elements 400 of an elastic material (see FIGS. 1D and 1E ), such as rubber and silica gel, through petroleum jelly or alcohol, applying a tensile stress to the plurality of elastic elements 400 so as to extend the plurality of elastic elements 400 together with the conductive film 200 along the second direction “Y”, thereby enlarging the conductive film 200 in the second direction “Y”.
- the elastic elements 400 are parallel each other.
- the stretching operation in the first direction “X” or the second direction “Y” has a stretching rate ranging from 0.1 cm/sec to 5 cm/sec.
- the stretching rate is 0.5 cm/sec.
- the exemplary embodiment of a method for making a conductive plate (see FIGS. 1B and 2 ) of the present disclosure includes (a) stretching a nanomaterial 210 to remove the nanomaterial 210 from a first substrate 300 so as to form the conductive film 200 exhibiting electric anisotropy; and (b) attaching the conductive film 200 to a second substrate 100 so as to form the conductive plate of the exemplary embodiment of present disclosure.
- the second substrate 200 can be made from glass or a transparent polymer.
- the transparent polymer may be, but is not limited to, polymethyl methacrylate, polyethylene terephthalate, or polycarbonate.
- the exemplary embodiment of the method for making the conductive plate further includes thinning the conductive film 200 formed in step (a) by heating the conductive film 200 .
- the heating operation is performed by thermal treatment techniques or laser treatment techniques.
- the deposition reactor required to form the nanomaterial is only required to have a size sufficient to produce the size of the cluster of nanounits 202 .
- the deposition reactor of the aforesaid prior art is required to have a size sufficient to produce the size of the ITO conductive film.
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Abstract
A method for making a conductive film exhibiting electric anisotropy comprises forming a nanomaterial on a substrate, the nanomaterial having a cluster of interconnected nanounits, each of which being substantially transverse to the substrate and having one end bonded to the substrate. The method further includes stretching the nanounits along a first direction to remove the nanomaterial from the substrate so as to form a conductive film having strings of interconnected nanounits, where the nanounits of the strings substantially extend in the first direction. A conductive plate and a method for making the same is also disclosed, where the method further comprises attaching the conductive film to a second substrate.
Description
- This application is a divisional application of co-pending U.S. application Ser. No. 12/826,582, filed on Jun. 29, 2010, which claims the priority to China Patent Application No. 200910304083.2 filed in the China Patent Office on Jul. 7, 2009, which is herein incorporated by reference in its entirety.
- 1. Technical Field
- The present disclosure relates to a method for making a conductive film and a a conductive plate, and more particularly to a method involving removing a nanomaterial from a substrate and stretching the nanomaterial so as to form a conductive film exhibiting electric anisotropy.
- 2. Description of Related Art
- Transparent conductive plates having transmittance and conductivity are widely used in flat panel displays (FPD), such as liquid crystal displays (LCD) or touch panels.
- Generally, a conductive plate has a transparent substrate made from glass or polyethylene terephthalate (PET), and a transparent conductive film (TCF) formed thereon. The transparent conductive film (TCF) is normally formed by sputtering techniques, and can be made from indium tin oxide (ITO), tin oxide (SnO.sub.2), or zinc oxide (ZnO). Among them, ITO is best qualified for commercial use in manufacturing the conductive plate by virtue of its high transmittance and high conductivity. Manufacture of large size conductive plates requires an expensive large size sputtering or deposition reactor for forming the ITO film on the transparent substrate. In addition, the control of forming a uniform thickness of the ITO film is very difficult when the size of the ITO film to be formed is large. Hence, there is a need in the art to provide a method for making a large size transparent conductive film without the need of a large size sputtering or deposition reactor.
- According to one aspect of this disclosure, there is provided a method for making a conductive film exhibiting electric anisotropy that comprises (A) forming a nanomaterial on a substrate, the nanomaterial having a cluster of interconnected nanounits, each of the nanounits being substantially transverse to the substrate and having one end bonded to the substrate; and (B) stretching the nanounits along a first direction to remove the nanomaterial from the substrate so as to form a conductive film having strings of interconnected nanounits, and stretching the strings of the interconnected nanounits, wherein the nanounits of the strings substantially extend in the first direction.
- According to another aspect of this disclosure, there is provided a method for making a conductive plate that comprises (a) stretching a nanomaterial to move the nanomaterial so as to form a conductive film exhibiting electric anisotropy; and (b) attaching the conductive film to a second substrate.
- According to yet another aspect of this disclosure, there is provided a conductive plate that comprises a substrate; and a conductive film attached to the substrate and exhibiting electric anisotropy. The conductive film is formed by stretching a nanomaterial, which is removed from another substrate on which the nanomaterial is deposited.
- The components in the drawings are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of at least one embodiment. In the drawings, like reference numerals designate corresponding parts throughout the various views.
-
FIG. 1A is a perspective view of an exemplary embodiment of a conductive film of the present disclosure with a scanning electron microscope (SEM) cross-sectional image illustrating the structure of a nanomaterial formed on a first substrate. -
FIG. 1B is a perspective view of the exemplary embodiment of the conductive film of the present disclosure, illustrating how strings of interconnected nanounits are stretched along a first direction “X” according to the method of this disclosure. -
FIG. 1C is a schematic side view with an SEM cross-sectional image illustrating the structure of the conductive film formed according to the method of the present disclosure. -
FIG. 1D is a top view ofFIG. 1C with an SEM image, illustrating the structure of the conductive film before stretched along a second direction “Y”. -
FIG. 1E is a top view ofFIG. 1D with an SEM image, illustrating the structure of the conductive film after stretched along the second direction “Y”. -
FIG. 2 is a sectional side view of an exemplary embodiment of a conductive plate of the present disclosure. - Reference will now be made to the drawings to describe various embodiments in detail.
- Referring to
FIGS. 1A to 1C , the exemplary embodiment of a method for making aconductive film 200 exhibiting electric anisotropy of the present disclosure includes: (A) forming ananomaterial 210 on afirst substrate 300 using a deposition reactor (not shown), thenanomaterial 210 having a cluster ofinterconnected nanounits 202, each of thenanounits 202 being substantially transverse to thefirst substrate 300 and having one end bonded to the first substrate 300 (seeFIG. 1A ); and (B) stretching thenanounits 202 along a first direction “X” to remove thenanomaterial 210 from thefirst substrate 300 so as to form a conductivefilm having strings 220 ofinterconnected nanounits 202, where thenanounits 202 of thestrings 220 substantially extend in the first direction “X” (seeFIG. 1B ) so as to form the conductive film 200 (seeFIG. 1C ) exhibiting electric anisotropy. - For example, the
nanounits 202 are anisotropic in shape. Thenanounits 202 can be carbon nanotubes (CNTs), carbon nanotube bundles, or nanoparticles formed by arc discharge techniques, laser vaporization techniques, or chemical vapor deposition (CVD) techniques, for example. Thefirst substrate 300 can be made from silicon, graphite, or quartz, for example. - In more detail, in step (B), for instance, the
nanounits 210 include thenanounit 202 a, thenanounit 202 b, and thenanounit 202 c. When thenanounit 202 a is stretched along a first direction “X” to remove thenanounits 202 a from thefirst substrate 300, thenanounits 202 b, which is adjacent to thenanounit 202 a, is also peeled from thefirst substrate 300 by thenanounit 202 a through a Van der Waals' interaction therebetween. In a similar way, thenanounit 202 c, which is adjacent to thenanounit 202 b, is also peeled from thefirst substrate 300 by thenanounit 202 b through a Van der Waals' interaction therebetween when thenanounit 202 b is stretched. As a result of the Van der Waals' interaction, thenanounit 202 a, thenanounit 202 b, and thenanounit 202 c are serially connected to form astring 220 ofinterconnected nanounits 220. As a consequence, thenanounits 202 on thefirst substrate 300 can be removed substantially in a row by row manner so as to form strings ofinterconnected nanounits 220, that consists theconductive film 200 exhibiting electric anisotropy. - In the exemplary embodiment of the method for making the
conductive film 200, the second direction “Y” is substantially distinct from the first direction “X” (seeFIG. 1B ). Theconductive film 200 thus formed has thestrings 220 of the interconnected nanounits 202 (seeFIG. 1C ) extending in the first direction “X”. It should be understood that “electric anisotropy” used herein may be referred to as “conductive anisotropy” or “resistivity anisotropy”, and is a property having different conductivities or resistivities in different directions. In the exemplary embodiment, the conductivity/resistivity of theconductive film 200 in the first direction “X” is higher/lower than the conductivity/resistivity of theconductive film 200 in the second direction “Y”. - The SEM images shown in
FIGS. 1D and 1E show that the dimension of theconductive film 200 is expansible in the second direction “Y” by virtue of the structure of theconductive film 200. Hence, in the exemplary embodiment of the method for making theconductive film 200, the method further includes stretching theconductive film 200 formed in step (B) along the second direction “Y” so as to enlarge an area of the conductive film 200 (seeFIGS. 1D to 1E ) and so as to increase a transmittance of theconductive film 200. - The stretching of the
conductive film 200 in the second direction “Y” can be performed by one of mechanical stretching and blowing stretching. For instance, the stretching of theconductive film 200 in the second direction “Y” is performed by mechanical stretching. In an example, the mechanical stretching is conducted by attaching theconductive film 200 to a plurality ofelements 400 of an elastic material (seeFIGS. 1D and 1E ), such as rubber and silica gel, through petroleum jelly or alcohol, applying a tensile stress to the plurality ofelastic elements 400 so as to extend the plurality ofelastic elements 400 together with theconductive film 200 along the second direction “Y”, thereby enlarging theconductive film 200 in the second direction “Y”. In the exemplary embodiment of the method for making theconductive film 200, theelastic elements 400 are parallel each other. - For example, the stretching operation in the first direction “X” or the second direction “Y” has a stretching rate ranging from 0.1 cm/sec to 5 cm/sec. In the example, the stretching rate is 0.5 cm/sec.
- The exemplary embodiment of a method for making a conductive plate (see
FIGS. 1B and 2 ) of the present disclosure includes (a) stretching ananomaterial 210 to remove thenanomaterial 210 from afirst substrate 300 so as to form theconductive film 200 exhibiting electric anisotropy; and (b) attaching theconductive film 200 to asecond substrate 100 so as to form the conductive plate of the exemplary embodiment of present disclosure. - The
second substrate 200 can be made from glass or a transparent polymer. For instance, the transparent polymer may be, but is not limited to, polymethyl methacrylate, polyethylene terephthalate, or polycarbonate. - The exemplary embodiment of the method for making the conductive plate further includes thinning the
conductive film 200 formed in step (a) by heating theconductive film 200. For example, the heating operation is performed by thermal treatment techniques or laser treatment techniques. - In summary, by forming the cluster of the
nanounits 202 on thefirst substrate 300, followed by converting the cluster of thenanounits 202 to theconductive film 200 through stretching in the first and second directions “X, Y”, the deposition reactor required to form the nanomaterial is only required to have a size sufficient to produce the size of the cluster ofnanounits 202. Unlike the present disclosure, the deposition reactor of the aforesaid prior art is required to have a size sufficient to produce the size of the ITO conductive film. - It is to be understood that even though numerous characteristics and advantages of the present embodiments have been set forth in the foregoing description, together with details of the structures and functions of the embodiments, the disclosure is illustrative only; and that changes may be made in detail, especially in matters of shape, size, and arrangement of parts, within the principles of the embodiments, to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.
Claims (9)
1. A conductive plate, comprising:
a substrate; and
a conductive film attached to said substrate and exhibiting electric anisotropy;
wherein said conductive film is formed by stretching a nanomaterial, which is removed from another substrate on which said nanomaterial is deposited.
2. The conductive plate of claim 1 , wherein said conductive film has the strings of interconnected nanounits, each of which extends in a first direction along which said nanomaterial is stretched.
3. The conductive plate of claim 2 , wherein said nanounits are anisotropic in shape.
4. The conductive plate of claim 2 , wherein said nanounits are carbon nanotubes, carbon nanotube bundles, or nanoparticles.
5. The conductive plate of claim 1 , wherein said conductive film is further stretched along the second direction, wherein the second direction is distinct from the first direction.
6. A conductive film exhibiting electric anisotropy, comprising:
strings of interconnected nanounits,
wherein the nanounits of the strings substantially extend in a first direction,
wherein the conductive film is stretched along a second direction, wherein the second direction is distinct from the first direction and is perpendicular to the first direction.
7. A conductive film exhibiting electric anisotropy,
wherein the conductive film is formed by:
(a) stretching a nanomaterial along a first direction in a plane of stretching to remove the nanomaterial from a first substrate so as to form a conductive film having strings of interconnected nanounits, wherein the nanounits of the strings substantially extend in the first direction; and
(b) stretching the conductive film formed in step (b) along a second direction, wherein the second direction is distinct from the first direction and is perpendicular to the first direction.
8. The conductive film of claim 7 ,
wherein the conductive film stretched along the second direction has an enlarged area than a further conductive film,
wherein the further conductive film is formed by
stretching a nanomaterial along a first direction in a plane of stretching to remove the nanomaterial from a first substrate so as to form a conductive film having strings of interconnected nanounits, wherein the nanounits of the strings substantially extend in the first direction, but not stretching along the second direction.
9. The conductive film of claim 7 ,
wherein the conductive film stretched along the second direction has an increased transmittance than a further conductive film, .
wherein the further conductive film is formed by
stretching a nanomaterial along a first direction in a plane of stretching to remove the nanomaterial from a first substrate so as to form a conductive film having strings of interconnected nanounits, wherein the nanounits of the strings substantially extend in the first direction, but not stretching along the second direction.
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US14/152,176 US20140124244A1 (en) | 2009-07-07 | 2014-01-10 | Conductive plate and film exhibiting electric anisotropy |
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CN200910304083.2 | 2009-07-07 | ||
CN2009103040832A CN101944407A (en) | 2009-07-07 | 2009-07-07 | Conducting plate and manufacturing method thereof |
US12/826,582 US8646175B2 (en) | 2009-07-07 | 2010-06-29 | Method for making a conductive film/plate exibiting electric anisotropy |
US14/152,176 US20140124244A1 (en) | 2009-07-07 | 2014-01-10 | Conductive plate and film exhibiting electric anisotropy |
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US12/826,582 Division US8646175B2 (en) | 2009-07-07 | 2010-06-29 | Method for making a conductive film/plate exibiting electric anisotropy |
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US14/152,176 Abandoned US20140124244A1 (en) | 2009-07-07 | 2014-01-10 | Conductive plate and film exhibiting electric anisotropy |
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US (2) | US8646175B2 (en) |
EP (1) | EP2273510A1 (en) |
JP (1) | JP5572452B2 (en) |
KR (1) | KR20110004285A (en) |
CN (1) | CN101944407A (en) |
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EP2637185B1 (en) | 2012-03-06 | 2014-01-15 | ABB Technology Ltd | A tap changer and a method related thereto |
CN107230514A (en) * | 2016-03-23 | 2017-10-03 | 张家港康得新光电材料有限公司 | Flexible conductive film |
CN111958999B (en) * | 2020-07-24 | 2022-03-25 | 武汉理工大学 | Preparation method and application of high beta-phase PVDF (polyvinylidene fluoride) film |
Citations (1)
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US20080018012A1 (en) * | 2005-09-06 | 2008-01-24 | Lemaire Alexander B | Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom |
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CN100411979C (en) * | 2002-09-16 | 2008-08-20 | 清华大学 | Carbon nano pipe rpoe and preparation method thereof |
CN1282216C (en) * | 2002-09-16 | 2006-10-25 | 清华大学 | Filament and preparation method thereof |
US20050209392A1 (en) * | 2003-12-17 | 2005-09-22 | Jiazhong Luo | Polymer binders for flexible and transparent conductive coatings containing carbon nanotubes |
CN103276486B (en) * | 2004-11-09 | 2017-12-15 | 得克萨斯大学体系董事会 | The manufacture and application of nano-fibre yams, band and plate |
EP2138998B1 (en) | 2008-06-04 | 2019-11-06 | Tsing Hua University | Thermoacoustic device comprising a carbon nanotube structure |
CN101599268B (en) * | 2008-06-04 | 2013-06-05 | 北京富纳特创新科技有限公司 | Sound-producing device and sound-producing element |
CN101734644B (en) * | 2008-11-14 | 2012-01-25 | 清华大学 | Method for stretching carbon nano-tube films |
CN101847345B (en) * | 2009-03-27 | 2012-07-18 | 清华大学 | Incandescent light source display device and manufacture method thereof |
-
2009
- 2009-07-07 CN CN2009103040832A patent/CN101944407A/en active Pending
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2010
- 2010-06-23 JP JP2010142618A patent/JP5572452B2/en active Active
- 2010-06-29 US US12/826,582 patent/US8646175B2/en active Active
- 2010-06-30 KR KR1020100062739A patent/KR20110004285A/en not_active Application Discontinuation
- 2010-07-02 EP EP10168350A patent/EP2273510A1/en not_active Withdrawn
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US20080018012A1 (en) * | 2005-09-06 | 2008-01-24 | Lemaire Alexander B | Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom |
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JP5572452B2 (en) | 2014-08-13 |
KR20110004285A (en) | 2011-01-13 |
EP2273510A1 (en) | 2011-01-12 |
JP2011018641A (en) | 2011-01-27 |
US20110005816A1 (en) | 2011-01-13 |
CN101944407A (en) | 2011-01-12 |
US8646175B2 (en) | 2014-02-11 |
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