US20140103382A1 - High efficiency light emitting diode device - Google Patents
High efficiency light emitting diode device Download PDFInfo
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- US20140103382A1 US20140103382A1 US14/108,283 US201314108283A US2014103382A1 US 20140103382 A1 US20140103382 A1 US 20140103382A1 US 201314108283 A US201314108283 A US 201314108283A US 2014103382 A1 US2014103382 A1 US 2014103382A1
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- 238000005538 encapsulation Methods 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 28
- 230000003247 decreasing effect Effects 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 238000002372 labelling Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Definitions
- the invention relates in general to a light emitting diode device, and more particularly to a light emitting diode device having a plurality of pillar structures on the surface of the packaging layer to increase the light emitting efficiency.
- Fluorescent powders are often used in the light emitting diode for the transformation of the light.
- fluorescent powders are capable of absorbing the light emitted by a light emitting diode light source and transforming the absorbed light into a light with other wavelength.
- the light emitting diode may use suitable types of fluorescent powders, and the light transformed by the fluorescent powders may be mixed with the light emitted by a light source to produce a light different from the original light.
- the light emitting diode may emit a white light.
- the invention is directed to a light emitting diode device.
- the pillars are disposed on the encapsulation layer, such that the light emitting efficiency of the light emitting diode device is effectively increased.
- a light emitting diode device comprises a light emitting diode element, an encapsulation layer, and a plurality of pillars.
- the encapsulation layer is disposed on the light emitting diode element, and the pillars are disposed on the encapsulation layer.
- the pillars are formed by a light transmissible material.
- FIG. 1A shows a schematic diagram of a light emitting diode device according to an embodiment of the invention
- FIG. 1B shows a partial diagram of the light emitting diode device of FIG. 1A ;
- FIG. 2 shows a partial enlargement of the light emitting diode device of FIG. 1B ;
- FIGS. 3A-3B show partial diagrams of the pillars of a light emitting diode device according to an embodiment of the invention
- FIG. 4 shows a schematic diagram of a light emitting diode device according to another embodiment of the invention
- FIG. 5 shows a schematic diagram of a light emitting diode device according to an alternate embodiment of the invention.
- a light emitting diode device is disclosed in a number of embodiments below.
- the pillars are disposed on the encapsulation layer such that the light emitting efficiency of the light emitting diode device is effectively increased.
- the detailed structures disclosed in the embodiments below are for exemplification purpose only not for limiting the scope of protection of the invention.
- anyone who is skilled in the technology of the invention will be able to modify or change the details of the detailed structures to fit the needs in practical implementations.
- FIG. 1A shows a schematic diagram of a light emitting diode device according to an embodiment of the invention.
- the light emitting diode device 100 comprises a light emitting diode element 110 , an encapsulation layer 120 , and a plurality of pillars 130 .
- the encapsulation layer 120 is disposed on and surrounding the light emitting diode element 110
- the pillars 130 are disposed on the encapsulation layer 120 .
- the pillars 130 are formed by a light transmissible material, such as transparent or translucent materials.
- the pillars 130 are disposed on the encapsulation layer 120 , such that the light emitting surface of the light emitting diode device 100 is a three-dimensional geometric structure instead and not a two-dimensional plane anymore, so as to the amount of the total internal reflection in the encapsulation layer 120 is reduced. In other words, when the light emitted from the encapsulation layer 120 is increased, the light emitting efficiency of the light emitting diode device 100 is also increased.
- FIG. 1B shows a partial diagram of the light emitting diode device of FIG. 1A .
- the light L emitted by the light emitting diode element 110 passes through the encapsulation layer 120 and the pillars 130 and enters the air.
- the light L generates various incident angles and refraction angles when passing through different interfaces.
- the material of the encapsulation layer 120 may be the same with or different from that of the pillars 130 .
- the encapsulation layer 120 has a first refractive index
- the pillars 130 have a second refractive index.
- the first refractive index is equal to the second refractive index if the material of the encapsulation layer 120 is the same with that of the pillars 130 , and hence, an incident angle ⁇ 1 and an emitting angle ⁇ 2 of the light L with respect to the surface 120 a of the encapsulation layer 120 are equal to each other.
- the first refractive index and the second refractive index are different from each other if the material of the encapsulation layer 120 is different from that of the pillars 130 , and hence, the incident angle ⁇ 1 and the emitting angle ⁇ 2 of the light L with respect to the surface 120 a of the encapsulation layer 120 are different from each other.
- the light L enters the air via the side wall of the pillars 130 and generates a light L1.
- An angle ⁇ 3 between the light L1 and the side wall of the pillars 130 is different from the emitting angle ⁇ 2 of the light L. As shown in FIG.
- the light L is emitted via the side wall of the pillars 130 when the light L emitted by the light emitting diode element 110 proceeds to the surface 120 a of the encapsulation layer 120 , even if the incident angle ⁇ 1 of the light L with respect to the surface 120 a is larger than the critical angle.
- the light emitting pattern of the light emitting diode device 100 is changed, the light emitting angle of the light emitting diode device 100 is increased, and the light emitting efficiency of the light emitting diode device 100 is improved.
- the light emitting efficiency of the light emitting diode device 100 is increased by about 10-15% in the present embodiment in which the pillars 130 are disposed on the encapsulation layer 120 .
- the first refractive index of the encapsulation layer 120 is larger than or equal to the second refractive index of the pillars 130 , and the light can be effectively emitted from the pillars 130 when the first refractive index is larger than or equal to the second refractive index.
- the pillars 130 have a gradient refractive index gradually decreased along a direction from the part near the encapsulation layer 120 to the part departing from the encapsulation layer 120 .
- the light emitting diode device 100 further comprises a plurality of fluorescent particles 150 distributed within the encapsulation layer 120 .
- the pillars 130 are regularly disposed on the encapsulation layer 120 and are spaced apart from one another.
- the pillars 130 may be irregularly (not illustrated) disposed on the encapsulation layer 120 and are spaced apart from one another.
- the pillars 130 are such as circular pillars, elliptical pillars, or polygonal pillars.
- the light L may be emitted to the outside from the side wall of the pillars 130 without being blocked by the side wall of neighboring pillars 130 and reflected back to the encapsulation layer 120 or the pillars 130 . Since the light L may be effectively emitted towards a light emitting direction, the light emitting efficiency of the light emitting diode device 100 is thus increased.
- a width D of the pillars 130 is such as between 1 and 500 ⁇ m, and a height H of the pillars 130 is such as between 10 and 500 ⁇ m.
- the width, the height, the shape, and the interval of the pillars 130 may be properly selected according to actual needs in practical applications.
- the width, the height, the shape, and the interval of the pillars 130 may be adjusted according to the condition of the emitted light or may be optimized by using optical simulation software, and are not limited to the above terms and exemplifications.
- FIG. 2 shows a partial diagram of the light emitting diode device of FIG. 1A .
- a partial surface 120 b on the encapsulation layer 120 is located between the pillars 130 with no pillar disposed on the partial surface 120 b .
- the partial surface 120 b will be a direct interface between the encapsulation layer 120 and the air.
- the light L reaching the partial surface 120 b will be total internal reflected and become a total internal reflection light L2 reflected back to the encapsulation layer 120 if an angle ⁇ between the light L and the partial surface 120 b is larger than the critical angle.
- FIGS. 3A-3B show partial diagrams of the pillars of a light emitting diode device according to an embodiment of the invention.
- the cross-sectional areas of the pillars 130 are gradually decreased or increased along a direction from the part near the encapsulation layer 120 to the part departing from the encapsulation layer 120 .
- the pillars 130 have a cross-section parallel to the surface 120 a of the encapsulation layer 120 , such as the cross-section formed along a cross-sectional line A-A′ and the cross-section formed along a cross-sectional line B-B′.
- the area of the cross-section formed along a cross-sectional line A-A′ is larger than and the area of the cross-section formed along a cross-sectional line B-B′.
- the cross-sectional areas of the pillars 130 are gradually increased along a direction from the part near the encapsulation layer 120 to the part departing from the encapsulation layer 120 .
- the area of the cross-section formed along a cross-sectional line A-A′ is smaller than the area of the cross-section formed along a cross-sectional line B-B′.
- the tilt angle of the side wall of the pillars 130 enables the light L to be emitted to the outside via the side wall of the pillars 130 without being total internal reflected. Consequently, superior light emitting efficiency can thus be achieved.
- FIG. 4 shows a schematic diagram of a light emitting diode device according to another embodiment of the invention.
- the elements in this and previous embodiments sharing the same labeling are the same elements, and the description of which are as aforementioned.
- the light emitting diode device 200 comprises a light emitting diode element 110 , an encapsulation layer 120 , a plurality of pillars 130 , and a wrapping material 240 .
- the wrapping material 240 surrounds each of the pillars 130 .
- the encapsulation layer 120 has a first refractive index
- the pillars 130 have a second refractive index
- the wrapping material 240 has a third refractive index.
- the first refractive index is larger than or equal to the third refractive index.
- the third refractive index is smaller than or larger than the second refractive index, in other words, the third refractive index is not equal to the second refractive index.
- the wrapping material 240 has a gradient refractive index gradually decreased along a direction from the part near the encapsulation layer 120 to the part departing from the encapsulation layer 120 .
- the manufacturing method of the light emitting diode device 200 is exemplified below. Firstly, a wrapping material layer is formed on a surface of the encapsulation layer 120 , and a plurality of holes is formed on the wrapping material layer. Then, a pillar material is filled into the holes to form the wrapping material 240 and the plurality of pillars 130 separately. Under such circumstance, the wrapping material 240 and the encapsulation layer 120 may be formed by the same or different materials, but the material of the wrapping material 240 is different from the material of the pillars 130 .
- the manufacturing method of the light emitting diode device 200 is exemplified below. Firstly, a plurality of holes is formed on the surface of the encapsulation layer 120 . Then, a pillar material is filled into the holes to form the wrapping material 240 and the plurality of pillars 130 . Under such circumstance, the wrapping material 240 is formed by a part of the encapsulation layer 120 , so the encapsulation layer 120 and the wrapping material 240 are formed by the same material, but the material of the pillars 130 is different from that of the wrapping material 240 and the encapsulation layer 120 .
- FIG. 5 shows a schematic diagram of a light emitting diode device according to an alternate embodiment of the invention.
- the elements in this and previous embodiments sharing the same labeling are the same elements, and the description of which are as aforementioned.
- the light emitting diode device 300 comprises a light emitting diode element 110 , an encapsulation layer 120 , a plurality of pillars 130 , and a plurality of fluorescent particles 351 .
- the fluorescent particles 351 are disposed between the encapsulation layer 120 and the pillars 130 .
- the light emitting diode device 300 comprises, for example, a phosphor layer 350 disposed between the encapsulation layer 120 and the pillars 130 , wherein the fluorescent particles 351 are distributed within the phosphor layer 350 .
- the light emitting diode device 300 is such as a remote phosphor light emitting diode display.
- a plurality of pillars are disposed on the encapsulation layer, so that less amount of the lights emitted from light emitting diode element is total internal reflected in the encapsulation layer, and the light emitting efficiency of the light emitting diode device is thus increased.
- the pillars are disposed on the encapsulation layer and are spaced apart from one another, such that the light will not be blocked by the side wall of neighboring pillars and will thus be effectively emitted towards the light emitting direction, hence increasing the light emitting efficiency of the light emitting diode device.
- the tilt angle on the side wall of the pillars enables the light to be emitted to the outside via the side wall of the pillars 130 without being total internal reflected. Consequently, superior light emitting efficiency can thus be achieved.
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- Engineering & Computer Science (AREA)
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Abstract
A light emitting diode device is provided. The light emitting diode device comprises a light emitting diode element, an encapsulation layer, and a plurality of pillars. The encapsulation layer is disposed on the light emitting diode element, and the pillars are disposed on the encapsulation layer. The pillars are formed by a light transmissible material.
Description
- This application is a continuation of U.S. patent application Ser. No. 13/562,024 filed Jul. 30, 2012, now pending, which claims the benefit of U.S. provisional application Ser. No. 61/513,658, filed Jul. 31, 2011, and the benefit of Taiwan application Serial No. 101122518, filed Jun. 22, 2012, the subject matters of which are incorporated herein by reference.
- 1. Field of the Invention
- The invention relates in general to a light emitting diode device, and more particularly to a light emitting diode device having a plurality of pillar structures on the surface of the packaging layer to increase the light emitting efficiency.
- 2. Description of the Related Art
- Along with the advance in the display technology, the research and development on various displays have rapidly developed, and the requirements on the functions and features of the displays are also getting higher and higher. How to apply phosphor to the light emitting diode display has become a focus in the research of the display.
- Fluorescent powders are often used in the light emitting diode for the transformation of the light. Particularly, fluorescent powders are capable of absorbing the light emitted by a light emitting diode light source and transforming the absorbed light into a light with other wavelength. The light emitting diode may use suitable types of fluorescent powders, and the light transformed by the fluorescent powders may be mixed with the light emitted by a light source to produce a light different from the original light. For example, the light emitting diode may emit a white light.
- However, since the refractive index of the encapsulation or the fluorescent colloidal of the light emitting diode is different from that of the air, a part of the light emitted by the light emitting diode will be total internal reflected after the light is emitted from encapsulation, resulting in energy loss of the light, which deteriorates the light emitting efficiency of the light emitting diode. Therefore, how to provide a light emitting diode element with superior light emitting efficiency has become a prominent task for the industries.
- The invention is directed to a light emitting diode device. The pillars are disposed on the encapsulation layer, such that the light emitting efficiency of the light emitting diode device is effectively increased.
- According to an embodiment of the present invention, a light emitting diode device is provided. The light emitting diode device comprises a light emitting diode element, an encapsulation layer, and a plurality of pillars. The encapsulation layer is disposed on the light emitting diode element, and the pillars are disposed on the encapsulation layer. The pillars are formed by a light transmissible material.
- The above and other aspects of the invention will become better understood with regard to the following detailed description of the preferred but non-limiting embodiment(s). The following description is made with reference to the accompanying drawings.
-
FIG. 1A shows a schematic diagram of a light emitting diode device according to an embodiment of the invention; -
FIG. 1B shows a partial diagram of the light emitting diode device ofFIG. 1A ; -
FIG. 2 shows a partial enlargement of the light emitting diode device ofFIG. 1B ; -
FIGS. 3A-3B show partial diagrams of the pillars of a light emitting diode device according to an embodiment of the invention; -
FIG. 4 shows a schematic diagram of a light emitting diode device according to another embodiment of the invention -
FIG. 5 shows a schematic diagram of a light emitting diode device according to an alternate embodiment of the invention. - A light emitting diode device is disclosed in a number of embodiments below. The pillars are disposed on the encapsulation layer such that the light emitting efficiency of the light emitting diode device is effectively increased. However, the detailed structures disclosed in the embodiments below are for exemplification purpose only not for limiting the scope of protection of the invention. Anyone who is skilled in the technology of the invention will be able to modify or change the details of the detailed structures to fit the needs in practical implementations.
-
FIG. 1A shows a schematic diagram of a light emitting diode device according to an embodiment of the invention. As shown inFIG. 1A , the lightemitting diode device 100 comprises a lightemitting diode element 110, anencapsulation layer 120, and a plurality ofpillars 130. Theencapsulation layer 120 is disposed on and surrounding the lightemitting diode element 110, and thepillars 130 are disposed on theencapsulation layer 120. Thepillars 130 are formed by a light transmissible material, such as transparent or translucent materials. Thepillars 130 are disposed on theencapsulation layer 120, such that the light emitting surface of the lightemitting diode device 100 is a three-dimensional geometric structure instead and not a two-dimensional plane anymore, so as to the amount of the total internal reflection in theencapsulation layer 120 is reduced. In other words, when the light emitted from theencapsulation layer 120 is increased, the light emitting efficiency of the lightemitting diode device 100 is also increased. -
FIG. 1B shows a partial diagram of the light emitting diode device ofFIG. 1A . As shown inFIG. 1B , the light L emitted by the lightemitting diode element 110 passes through theencapsulation layer 120 and thepillars 130 and enters the air. The light L generates various incident angles and refraction angles when passing through different interfaces. In the present embodiment, the material of theencapsulation layer 120 may be the same with or different from that of thepillars 130. - In an embodiment, the
encapsulation layer 120 has a first refractive index, and thepillars 130 have a second refractive index. In an embodiment, the first refractive index is equal to the second refractive index if the material of theencapsulation layer 120 is the same with that of thepillars 130, and hence, an incident angle θ1 and an emitting angle θ2 of the light L with respect to thesurface 120 a of theencapsulation layer 120 are equal to each other. In another embodiment, as shown inFIG. 1B , the first refractive index and the second refractive index are different from each other if the material of theencapsulation layer 120 is different from that of thepillars 130, and hence, the incident angle θ1 and the emitting angle θ2 of the light L with respect to thesurface 120 a of theencapsulation layer 120 are different from each other. The light L enters the air via the side wall of thepillars 130 and generates a light L1. An angle θ3 between the light L1 and the side wall of thepillars 130 is different from the emitting angle θ2 of the light L. As shown inFIG. 1B , the light L is emitted via the side wall of thepillars 130 when the light L emitted by the lightemitting diode element 110 proceeds to thesurface 120 a of theencapsulation layer 120, even if the incident angle θ1 of the light L with respect to thesurface 120 a is larger than the critical angle. When the light L1 is emitted via the side wall of thepillars 130, the light emitting pattern of the light emittingdiode device 100 is changed, the light emitting angle of the light emittingdiode device 100 is increased, and the light emitting efficiency of the light emittingdiode device 100 is improved. In comparison to the light emitting efficiency of the light emitting diode device in an embodiment without the disposition of the pillars, the light emitting efficiency of the light emittingdiode device 100 is increased by about 10-15% in the present embodiment in which thepillars 130 are disposed on theencapsulation layer 120. - In an embodiment, the first refractive index of the
encapsulation layer 120 is larger than or equal to the second refractive index of thepillars 130, and the light can be effectively emitted from thepillars 130 when the first refractive index is larger than or equal to the second refractive index. In another embodiment, thepillars 130 have a gradient refractive index gradually decreased along a direction from the part near theencapsulation layer 120 to the part departing from theencapsulation layer 120. - As indicated in
FIG. 1A , in an embodiment, the light emittingdiode device 100 further comprises a plurality offluorescent particles 150 distributed within theencapsulation layer 120. - As indicated in
FIG. 1A , in an embodiment, thepillars 130 are regularly disposed on theencapsulation layer 120 and are spaced apart from one another. In another embodiment, thepillars 130 may be irregularly (not illustrated) disposed on theencapsulation layer 120 and are spaced apart from one another. In an embodiment, thepillars 130 are such as circular pillars, elliptical pillars, or polygonal pillars. As thepillars 130 are disposed on theencapsulation layer 120 and are spaced apart from one another, the light L may be emitted to the outside from the side wall of thepillars 130 without being blocked by the side wall of neighboringpillars 130 and reflected back to theencapsulation layer 120 or thepillars 130. Since the light L may be effectively emitted towards a light emitting direction, the light emitting efficiency of the light emittingdiode device 100 is thus increased. - As shown in
FIG. 1A , in an embodiment, a width D of thepillars 130 is such as between 1 and 500 μm, and a height H of thepillars 130 is such as between 10 and 500 μm. However, the width, the height, the shape, and the interval of thepillars 130 may be properly selected according to actual needs in practical applications. For example, the width, the height, the shape, and the interval of thepillars 130 may be adjusted according to the condition of the emitted light or may be optimized by using optical simulation software, and are not limited to the above terms and exemplifications. -
FIG. 2 shows a partial diagram of the light emitting diode device ofFIG. 1A . As shown inFIG. 2 , apartial surface 120 b on theencapsulation layer 120 is located between thepillars 130 with no pillar disposed on thepartial surface 120 b. Thepartial surface 120 b will be a direct interface between theencapsulation layer 120 and the air. When the light L emitted by the light emitting diode element proceeds to thepartial surface 120 b in theencapsulation layer 120, the light L reaching thepartial surface 120 b will be total internal reflected and become a total internal reflection light L2 reflected back to theencapsulation layer 120 if an angle θ between the light L and thepartial surface 120 b is larger than the critical angle. -
FIGS. 3A-3B show partial diagrams of the pillars of a light emitting diode device according to an embodiment of the invention. Referring toFIG. 3A , the cross-sectional areas of thepillars 130 are gradually decreased or increased along a direction from the part near theencapsulation layer 120 to the part departing from theencapsulation layer 120. As shown inFIG. 3A , thepillars 130 have a cross-section parallel to thesurface 120 a of theencapsulation layer 120, such as the cross-section formed along a cross-sectional line A-A′ and the cross-section formed along a cross-sectional line B-B′. The area of the cross-section formed along a cross-sectional line A-A′ is larger than and the area of the cross-section formed along a cross-sectional line B-B′. Referring toFIG. 3B , the cross-sectional areas of thepillars 130 are gradually increased along a direction from the part near theencapsulation layer 120 to the part departing from theencapsulation layer 120. As shown inFIG. 3B , the area of the cross-section formed along a cross-sectional line A-A′ is smaller than the area of the cross-section formed along a cross-sectional line B-B′. When the cross-sectional areas of thepillars 130 are gradually decreased along a direction from the part near theencapsulation layer 120 to the part departing from theencapsulation layer 120, the tilt angle of the side wall of thepillars 130 enables the light L to be emitted to the outside via the side wall of thepillars 130 without being total internal reflected. Consequently, superior light emitting efficiency can thus be achieved. -
FIG. 4 shows a schematic diagram of a light emitting diode device according to another embodiment of the invention. The elements in this and previous embodiments sharing the same labeling are the same elements, and the description of which are as aforementioned. - As shown in
FIG. 4 , the light emittingdiode device 200 comprises a light emittingdiode element 110, anencapsulation layer 120, a plurality ofpillars 130, and awrapping material 240. The wrappingmaterial 240 surrounds each of thepillars 130. - In an embodiment, the
encapsulation layer 120 has a first refractive index, thepillars 130 have a second refractive index, and the wrappingmaterial 240 has a third refractive index. The first refractive index is larger than or equal to the third refractive index. The third refractive index is smaller than or larger than the second refractive index, in other words, the third refractive index is not equal to the second refractive index. In another embodiment, the wrappingmaterial 240 has a gradient refractive index gradually decreased along a direction from the part near theencapsulation layer 120 to the part departing from theencapsulation layer 120. - In an embodiment, the manufacturing method of the light emitting
diode device 200 is exemplified below. Firstly, a wrapping material layer is formed on a surface of theencapsulation layer 120, and a plurality of holes is formed on the wrapping material layer. Then, a pillar material is filled into the holes to form the wrappingmaterial 240 and the plurality ofpillars 130 separately. Under such circumstance, the wrappingmaterial 240 and theencapsulation layer 120 may be formed by the same or different materials, but the material of the wrappingmaterial 240 is different from the material of thepillars 130. - In another embodiment, the manufacturing method of the light emitting
diode device 200 is exemplified below. Firstly, a plurality of holes is formed on the surface of theencapsulation layer 120. Then, a pillar material is filled into the holes to form the wrappingmaterial 240 and the plurality ofpillars 130. Under such circumstance, the wrappingmaterial 240 is formed by a part of theencapsulation layer 120, so theencapsulation layer 120 and the wrappingmaterial 240 are formed by the same material, but the material of thepillars 130 is different from that of the wrappingmaterial 240 and theencapsulation layer 120. -
FIG. 5 shows a schematic diagram of a light emitting diode device according to an alternate embodiment of the invention. The elements in this and previous embodiments sharing the same labeling are the same elements, and the description of which are as aforementioned. - As shown in
FIG. 5 , the light emittingdiode device 300 comprises a light emittingdiode element 110, anencapsulation layer 120, a plurality ofpillars 130, and a plurality offluorescent particles 351. Thefluorescent particles 351 are disposed between theencapsulation layer 120 and thepillars 130. In an embodiment, the light emittingdiode device 300 comprises, for example, aphosphor layer 350 disposed between theencapsulation layer 120 and thepillars 130, wherein thefluorescent particles 351 are distributed within thephosphor layer 350. In an embodiment, the light emittingdiode device 300 is such as a remote phosphor light emitting diode display. - According to the light emitting diode device disclosed in above embodiments of the invention, a plurality of pillars are disposed on the encapsulation layer, so that less amount of the lights emitted from light emitting diode element is total internal reflected in the encapsulation layer, and the light emitting efficiency of the light emitting diode device is thus increased. Moreover, the pillars are disposed on the encapsulation layer and are spaced apart from one another, such that the light will not be blocked by the side wall of neighboring pillars and will thus be effectively emitted towards the light emitting direction, hence increasing the light emitting efficiency of the light emitting diode device. Besides, when the cross-sectional areas of the pillar are gradually decreased or increased along a direction from the part near the encapsulation layer to the part departing from the encapsulation layer, the tilt angle on the side wall of the pillars enables the light to be emitted to the outside via the side wall of the
pillars 130 without being total internal reflected. Consequently, superior light emitting efficiency can thus be achieved. - While the invention has been described by way of example and in terms of the preferred embodiment(s), it is to be understood that the invention is not limited thereto. On the contrary, it is intended to cover various modifications and similar arrangements and procedures, and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures.
Claims (9)
1. A light emitting diode device, comprising:
a light emitting diode element;
an encapsulation layer disposed surrounding the light emitting diode element; and
a plurality of pillars disposed on the encapsulation layer, wherein the pillars are formed by a light transmissible material.
2. The light emitting diode device according to claim 1 , wherein the encapsulation layer has a first refractive index, and the pillars have a second refractive index smaller than or equal to the first refractive index.
3. The light emitting diode device according to claim 2 , wherein the second refractive index have a gradient refractive index gradually decreased along a direction from the part near the encapsulation layer to the part departing from the encapsulation layer.
4. The light emitting diode device according to claim 1 , wherein the pillars are regularly or irregularly disposed on the encapsulation layer and are spaced apart from one another.
5. The light emitting diode device according to claim 1 , wherein the pillars are circular pillars, elliptical pillars or polygonal pillars.
6. The light emitting diode device according to claim 1 , wherein cross-sectional areas of the pillar are gradually decreased or increased along a direction from a near part of the encapsulation layer to a departing part of the encapsulation layer.
7. The light emitting diode device according to claim 1 , wherein a width of the pillars is between 1 and 500 μm, and a height of the pillars is between 10 and 500 μm.
8. The light emitting diode device according to claim 1 , further comprising a plurality of fluorescent particles distributed within the encapsulation layer.
9. The light emitting diode device according to claim 1 , further comprising a plurality of fluorescent particles disposed between the encapsulation layer and the pillars.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/108,283 US20140103382A1 (en) | 2011-07-31 | 2013-12-16 | High efficiency light emitting diode device |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161513658P | 2011-07-31 | 2011-07-31 | |
TW101122518 | 2012-06-22 | ||
TW101122518A TW201306323A (en) | 2011-07-31 | 2012-06-22 | Light emitting diode device |
US13/562,024 US8643273B2 (en) | 2011-07-31 | 2012-07-30 | Light emitting diode device having pillars disposed such that light efficiency of the device is improved |
US14/108,283 US20140103382A1 (en) | 2011-07-31 | 2013-12-16 | High efficiency light emitting diode device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/562,024 Continuation US8643273B2 (en) | 2011-07-31 | 2012-07-30 | Light emitting diode device having pillars disposed such that light efficiency of the device is improved |
Publications (1)
Publication Number | Publication Date |
---|---|
US20140103382A1 true US20140103382A1 (en) | 2014-04-17 |
Family
ID=47596668
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/562,024 Expired - Fee Related US8643273B2 (en) | 2011-07-31 | 2012-07-30 | Light emitting diode device having pillars disposed such that light efficiency of the device is improved |
US14/108,283 Abandoned US20140103382A1 (en) | 2011-07-31 | 2013-12-16 | High efficiency light emitting diode device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/562,024 Expired - Fee Related US8643273B2 (en) | 2011-07-31 | 2012-07-30 | Light emitting diode device having pillars disposed such that light efficiency of the device is improved |
Country Status (2)
Country | Link |
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US (2) | US8643273B2 (en) |
TW (1) | TW201306323A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016178234A (en) * | 2015-03-20 | 2016-10-06 | 株式会社東芝 | Semiconductor light-receiving device |
US11294195B2 (en) * | 2018-11-05 | 2022-04-05 | Osram Opto Semiconductors Gmbh | Aperiodic nano-optical array for angular shaping of incoherent emissions |
WO2023189384A1 (en) * | 2022-03-31 | 2023-10-05 | ソニーグループ株式会社 | Light-emitting device and image display device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4280050B2 (en) * | 2002-10-07 | 2009-06-17 | シチズン電子株式会社 | White light emitting device |
WO2007067758A2 (en) * | 2005-12-08 | 2007-06-14 | The Regents Of The University Of California | High efficiency light emitting diode (led) |
JP2010510659A (en) | 2006-11-15 | 2010-04-02 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Light emitting diode with textured phosphor conversion layer |
DE102006054330A1 (en) | 2006-11-17 | 2008-05-21 | Merck Patent Gmbh | Phosphor plates for LEDs made of structured foils |
JP5104490B2 (en) * | 2007-04-16 | 2012-12-19 | 豊田合成株式会社 | Light emitting device and manufacturing method thereof |
US7825427B2 (en) * | 2008-09-12 | 2010-11-02 | Bridgelux, Inc. | Method and apparatus for generating phosphor film with textured surface |
KR100969100B1 (en) * | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the same and light emitting device package |
TW201208142A (en) * | 2010-08-06 | 2012-02-16 | Foxsemicon Integrated Tech Inc | Light emitting diode |
-
2012
- 2012-06-22 TW TW101122518A patent/TW201306323A/en unknown
- 2012-07-30 US US13/562,024 patent/US8643273B2/en not_active Expired - Fee Related
-
2013
- 2013-12-16 US US14/108,283 patent/US20140103382A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW201306323A (en) | 2013-02-01 |
US8643273B2 (en) | 2014-02-04 |
US20130026911A1 (en) | 2013-01-31 |
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