US20140034939A1

US20140034939A1 - Polymeric material, method of forming the polymeric material, and method of forming a thin film using the polymeric material

Info

Publication number: US20140034939A1
Application number: US14/049,738
Authority: US
Inventors: Ali Afzali-Ardakani; Cherie R. Kagan
Original assignee: International Business Machines Corp
Current assignee: GlobalFoundries Inc
Priority date: 2007-06-29
Filing date: 2013-10-09
Publication date: 2014-02-06
Also published as: US8586971B2; US7932128B2; US20110163303A1; US20090001355A1

Abstract

An organic semiconductor device includes a thin film comprising a polycyclic aromatic compound in a polymer matrix, the thin film including a substantially uniform thickness, such that a thickness of the thin film varies by no greater than 1.0 micrometer over the thin film.

Description

RELATED APPLICATIONS

The present Application is a Continuation Application of U.S. patent application Ser. No. 13/050,519 which was filed on Mar. 17, 2011, and which is a Divisional Application of U.S. patent application Ser. No. 11/771,854 which was filed on Jun. 29, 2007, now U.S. Pat. No. 7,932,128.

BACKGROUND OF THE INVENTION

1. Field of the Invention
The present invention relates to a polymeric material which may be reliably used to make a thin film (e.g., an organic semiconductor thin film) having a uniform thickness.
2. Description of the Related Art
Soluble organic semiconductors have attracted much interest for use in inexpensive low-end electronic devices such as radio frequency identification (RFID) tags or displays. Among organic semiconductors, pentacene has shown real potential for having field effect mobility which rivals amorphous silicon.
Solution processed pentacene thin film transistors (TFT) have been formed using soluble pentacene precursors which after deposition on the surface could be converted to pentacene by moderate heating (e.g., see U.S. Pat. No. 6,963,080 to Afzali-Ardakani et al. entitled “THIN FILM TRANSISTORS USING SOLUTION PROCESSED PENTACENE PRECURSOR AS ORGANIC SEMICONDUCTOR”; and U.S. Pat. No. 7,125,989 to Afzali-Ardakani et al. entitled “HETERO DIELS-ALDER ADDUCTS OF PENTACENE AS SOLUBLE PRECURSORS OF PENTACENE”).
However, since solutions of these precursors have very low viscosity and the molecules have relatively low molecular weights, uniform (e.g., uniform thickness) thin film coatings of these compounds are very difficult to form and are sometimes not repeatable.

SUMMARY OF THE INVENTION

In view of the foregoing and other problems, disadvantages, and drawbacks of the aforementioned compositions, methods and devices, it is a purpose of the exemplary aspects of the present invention to provide, inter alia, a polymeric material which may be reliably used to make a thin film (e.g., an organic semiconductor thin film) having a uniform thickness.
An exemplary aspect of the present invention is directed to a polymeric material with a pendant polycyclic aromatic compound precursor (e.g., a pendent pentacene precursor).
Another exemplary aspect of the present invention is directed to a method of forming a polymeric material with a pendant polycyclic aromatic compound precursor (e.g., a pendent pentacene precursor) which includes forming a polycyclic aromatic compound precursor including at least one polymerizable functionality, and polymerizing the polymerizable functionality to form the polymeric material with the pendant precursor.
Another exemplary aspect of the present invention is directed to a method of forming a thin film. The method includes depositing a solution comprising a polymeric material with a pendant polycyclic aromatic compound precursor (e.g., a pendent pentacene precursor) onto a substrate, removing a solvent from the deposited solution to form a thin film of the polymeric material with the pendant precursor, and heating the substrate to form a thin film of the polycyclic aromatic compound (e.g., pentacene) in a polymer matrix.
Another exemplary aspect of the present invention is directed to an organic semiconductor device which includes a thin film including a polycyclic aromatic compound (e.g., pentacene) in a polymer matrix.
With its unique and novel features, the exemplary aspects of the present invention may provide a material which may be reliably used to make a thin film (e.g., an organic semiconductor thin film) having a uniform thickness.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other objects, aspects and advantages will be better understood from the following detailed description of the embodiments of the invention with reference to the drawings, in which:

FIG. 1 illustrates a method 100 of forming a polymeric material with a pendant polycyclic aromatic compound precursor, according to an exemplary aspect of the present invention;

FIG. 2 illustrates a method 200 of forming a thin film (e.g., an organic semiconductor thin film), according to another exemplary aspect of the present invention; and

FIGS. 3A-3B illustrate an organic semiconductor device 300, according to an exemplary aspect of the present invention.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS OF THE INVENTION

Referring now to the drawings, FIGS. 1-3B illustrate the exemplary aspects of the present invention.
An exemplary aspect of the present invention is directed to a polymeric material with a pendant polycyclic aromatic compound precursor. The polymeric material may include a polymer such as polystyrene, or other polymers such as poly(methylmethacrylate), poly(acrylate) or polyethers. The polycyclic aromatic compound may include, for example, oligothiophene, perylene, benzo[ghi]perylene, coronene and polyacene (e.g., pentacene, tetracene, hexacene).
FIG. 1 illustrates a method 100 of forming a polymeric material with a pendant polycyclic aromatic compound precursor, according to an exemplary aspect of the present invention. The method 100 includes forming (110) a polycyclic aromatic compound precursor including at least one polymerizable functionality. For example, the at least one polymerizable functionality may include one of acrylate, methacrylate, styryl, and vinyl ether.
Further, forming (110) the precursor including at least one polymerizable functionality may include reacting a polycylic aromatic compound (e.g., pentacene) with a dienophile. The dienophile may include, for example, a compound that has at least one heteroatom such as N, O or S, connected by a double bond to a second heteroatom or carbon.
In particular, the dienophile may include at least one heteroatom bonded to an aromatic moiety, such as thioxonmalonates, azodicarboxylates, thialdehyde, acylnitroso and N-sulfinylamides. For example, the dienophile may include N-sulfinyl-4-styrylamide or N-sulfinylmetacrylamide.
Further, the polycyclic aromatic compound may be reacted with the dienophile at low to moderate temperatures and in the presence of a catalyst such as a Lewis acid catalyst. The Lewis acid catalyst may include, for example, titanium tetrachloride, silver tetrafluoroborate and methyl rhenium trioxide. Any residue from the dienophile remaining in the product of the reaction may be removed either by washing with a solvent or by vacuum drying.
The method 100 may also include polymerizing 120 the polymerizable functionality to form the polymeric material with the pendant precursor. The polymerizing 120 may include, for example, one of light polymerization, free radical polymerization and ionic polymerization.
The polymeric material with a pendent polycyclic aromatic compound precursor may be soluble (e.g., soluble in common organic solvents) and may have a molecular weight in a range from 2000 to 100000.
FIG. 2 illustrates a method 200 of forming a thin film, according to another exemplary aspect of the present invention. The method 200 may include depositing (210) a solution including a polymeric material with a pendant polycyclic aromatic compound precursor (e.g., a pendant pentacene precursor) onto a substrate (e.g., glass substrate, metal substrate, polymer substrate, silicon substrate, etc.). The depositing (210) may be performed, for example, by pouring, spraying, spin-coating, dip-coating, screen printing, micro-contact printing, doctor blading, etc.
The solution may include the polymeric material dissolved (e.g., substantially dissolved) in a solvent (e.g., an organic solvent). The solvent may include, for example, chloroform, tetrachloroethane, tetrahydrofuran (THF), toluene, ethyl acetate, methyl ethyl ketone (MEK), dimethyl formamide, dichlorobenzene, propylene glycol monomethyl ether acetate (PGMEA) or mixtures of any of these.
Further, the solution including the polymeric material may include a viscosity of at least 50 cps, but no greater than 100000 cps.
The method 200 may further include removing (220) the solvent from the deposited solution to form a thin film of the polymeric material with a pendant polycyclic aromatic compound precursor. For example, the solvent may be removed by using heat to drive off the solvent.
The method 200 may also include heating (230) the substrate to form a thin film of the polycylic aromatic compound (e.g., pentacene) in a polymer matrix. This may be performed, for example, by heating the substrate to a temperature in a range from about 100° C. to 200° C.
The method 200 may also include forming the polymeric material with a pendant polycyclic aromatic compound precursor (e.g., a pendent pentacene precusor). As described above, the polymeric material with a pendant polycyclic aromatic compound precursor may be formed by forming a polycyclic aromatic compound precursor including at least one polymerizable functionality, and polymerizing the polymerizable functionality to form the polymeric material with a pendant polycyclic aromatic compound precursor.
An exemplary aspect of the method 200 may be represented by the following scheme:
In this scheme, pentacene (I) may be reacted with a dienophile such as N-sulfinyl-4-styrylamide (II) in the presence of a Lewis acid catalyst to give the monomeric pentacene precursor adduct (III). The styryl functionality of the monomeric adduct (III) may be polymerized in the presence of light or free radical generators to form polystyrene with pentacene pendant (IV).
A film of this polymeric material (IV) may then be formed (e.g., coated) on a substrate and the solvent may be driven off to form a uniform thin film of this polymeric material. The substrate may then be heated at a moderate temperature (e.g., 100° C. to 200° C.) which may result in the formation of pentacene in a matrix of polystyrene.
FIG. 3 illustrates an organic semiconductor device 300, according to the exemplary aspects of the present invention. The device 300 may include a thin film 310 which includes a polycyclic aromatic compound (e.g., pentacene) in a polymer matrix (e.g., a polystyrene matrix). The thin film may have, for example, a thickness in a range from about 5 nm to 200 nm, and in an exemplary aspect the thickness of the thin film may be in a range from about 10 nm to about 50 nm.
Further, the thin film may include a substantially uniform thickness. For example, a thickness of the thin film may vary by no greater than about 1.0 micrometer over the entire thin film.
For example, the organic semiconductor device may include a thin film transistor (TFT). Such a thin film transistor may be used, for example, in electronic devices such as radio frequency identification (RFID) tags or displays. For example, the thin film transistor may include a channel region (e.g., a p-type channel region) which includes the thin film.
That is, the TFT may use a thin film of polycyclic aromatic compound in a polymer matrix (e.g., pentacene in a polystyrene matrix), as an organic semiconductor channel. Generally, the TFT may be formed by depositing a solution including the polymeric material with a pendant polycyclic aromatic compound precursor on a substrate (e.g., a highly doped silicon substrate) covered with a thin film of thermally grown oxide as gate dielectric, and then heating the solution to drive off the solvent. The substrate may then be heated to convert the thin film of the polymer material with a polycyclic aromatic compound precursor to a thin film of the polycyclic aromatic compound in a polymer matrix. Source and drain electrodes may then be deposited on top of the thin film of polycyclic aromatic compound in a polymer matrix film to get a TFT device.
The TFT may also include a gate electrode such as a patterned metal gate electrode formed on a substrate or a conducting material such as, a conducting polymer, which is then coated with an insulator. The insulator may include, for example, an oxide, nitride, a ferroelectric or an organic polymeric compound.
FIGS. 3A-3B illustrate an organic semiconductor device 300, according to an exemplary aspect of the present invention. As illustrated in FIG. 3A-3B, the organic semiconductor device 300 may include a TFT having a substrate 20 (e.g., glass, silicon, or plastic substrate), a layer of dielectric 30 formed on the substrate 20. The substrate 20 may include, for example, glass, polyethylenenaphthalate (PEN), polyethyleneterephthalate (PET), polycarbonate, polyvinylalcohol, polyacrylate, polyimide, polynorbornene, polyethersulfone (PES), etc. The dielectric 30 may include, for example, silicon dioxide, silicon nitride, aluminum oxide, PbZr_xTi_1−xO₃(PZT), Bi₄Ti₃O₁₂, BaMgF₄, Ba(Zr_1−xTi_x)O₃(BZT) and organic polymeric compounds like MYLAR™, Polyethylene Terephthalate, polycarbonate and polyimide.
The device 300 may, for example, be fabricated in at least two different geometries: top contact and bottom contact geometries as shown in FIGS. 3A and 3B.
In the bottom contact geometry of FIG. 3A, a thin film of dielectric 330 may be formed on substrate 320. Three contacts may then be formed on the substrate 320 (e.g., contact 331) and dielectric 330 (e.g., contacts 332, 333), and the thin film including a polycyclic aromatic compound in a polymer matrix 340 (e.g., pentacene in a polystyrene matrix) may be formed on the dielectric 330 and contacts 332, 333. The contacts may include, for example, a metal such as gold (Au), silver (Ag), nickel (Ni), indium tin oxide (ITO), chromium (Cr), etc. The device can be rinsed with solvents to remove any unreacted starting materials or products.
In the top contact geometry of FIG. 3B, the dielectric layer 330 may be formed on the substrate 320, and the thin film including a polycyclic aromatic compound in a polymer matrix 340 may be formed on the dielectric layer 330. Then, contacts 332 and 333 may be formed (e.g., through a shadow mask).
In summary, the exemplary aspects of the present invention may include a polymeric material with pendant polycyclic aromatic compound precursor which can be deposited from solution into a uniform thin film and which after removing the solvent(s), may be converted to polycyclic aromatic compound. In this approach very uniform coating of polycyclic aromatic compound may be obtained.
For example, the polymeric material may be formed by synthesizing a polycyclic aromatic compound precursor which includes at least one polymerizable functionality (acrylate, methacrylate, styryl, vinyl ether, etc.), and then polymerizing the functionality to form a polymeric material with pendant polycyclic aromatic compound precursors.
In an exemplary aspect of forming a polymeric material of the present invention, pentacene (I) may be reacted with a dienophile such as N-sulfinyl-4-styrylamide (II) in the presence of a Lewis acid catalyst to give the monomeric pentacene precursor adduct (III). The styryl functionality of the monomeric adduct (III) may be polymerized in the presence of light or free radical generators to form polystyrene with pentacene pendant.
The polymeric material may be soluble in common organic solvents and, depending on its molecular weight, may form a viscous solution. A film of this polymeric material may then be formed (e.g., coated) on a substrate and the solvent may be driven off to form a uniform thin film of this polymeric material. The substrate may then be heated at a moderate temperature (e.g., 100° C. to 200° C.) which may result in the formation of pentacene in a matrix of polystyrene.
With its unique and novel features, the exemplary aspects of the present invention may provide a material which may be reliably used to make a thin film (e.g., an organic semiconductor thin film) having a uniform thickness.
While the invention has been described in terms of one or more embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the appended claims. Specifically, one of ordinary skill in the art will understand that the drawings herein are meant to be illustrative, and the design of the inventive assembly is not limited to that disclosed herein but may be modified within the spirit and scope of the present invention.
Further, Applicant's intent is to encompass the equivalents of all claim elements, and no amendment to any claim in the present application should be construed as a disclaimer of any interest in or right to an equivalent of any element or feature of the amended claim.

Claims

What is claimed is:

1. An organic semiconductor device, comprising:

a thin film comprising a polycyclic aromatic compound in a polymer matrix,

wherein the thin film comprises a substantially uniform thickness, such that a thickness of the thin film varies by no greater than 1.0 micrometer over the thin film.

2. The organic semiconductor device of claim 1, wherein the polycyclic aromatic compound comprises a member selected from the group consisting of oligothiophene, perylene, benzo[ghi]perylene, coronene and polyacene.

3. The organic semiconductor device of claim 1, wherein the polycyclic aromatic compound comprises a member selected from the group consisting of pentacene, tetracene and hexacene.

4. The organic semiconductor device of claim 1, wherein the device comprises a thin film transistor.

5. The organic semiconductor device of claim 4, wherein the thin film transistor comprises a channel region including the thin film.

6. The organic semiconductor device of claim 4, wherein the thin film transistor comprises:

a dielectric material formed on a substrate; and

plural contacts formed on the dielectric material,

wherein the thin film comprising a polycyclic aromatic compound in a polymer matrix is formed on the dielectric material, and includes a channel region of the thin film transistor.

7. The organic semiconductor device of claim 1, wherein the thin film has a thickness in a range from about 5 nm to 200 nm.

8. The organic semiconductor device of claim 1, wherein the thin film has a thickness in a range from about 10 nm to about 50 nm.

9. The organic semiconductor device of claim 1, wherein the thin film of polycyclic aromatic compound in a polymer matrix comprises a thin film of pentacene in a polystyrene matrix.

10. A thin film for an organic semiconductor device, the thin film comprising:

a polycyclic aromatic compound in a polymer matrix.

11. The thin film of claim 10, wherein the polycyclic aromatic compound comprises a member selected from the group consisting of oligothiophene, perylene, benzo[ghi]perylene, coronene and polyacene.

12. The thin film of claim 10, wherein the polycyclic aromatic compound comprises a member selected from the group consisting of pentacene, tetracene and hexacene.

13. The thin film of claim 10, wherein the polycyclic aromatic compound in a polymer matrix comprises pentacene in a polystyrene matrix.

14. The thin film of claim 10, wherein the organic semiconductor device comprises a thin film transistor, and the thin film transistor comprises a channel region including the thin film.

15. A method of forming an organic semiconductor device, comprising:

forming a dielectric material on a substrate;

forming plural contacts on the dielectric material; and

forming a thin film comprising a polycyclic aromatic compound in a polymer matrix on the dielectric material, the thin film comprising a substantially uniform thickness, such that a thickness of the thin film varies by no greater than 1.0 micrometer over the thin film.

16. The method of claim 15, wherein the device comprises a thin film transistor and the forming of the thin film comprises forming a channel region of the thin film transistor.

17. The method of claim 15, wherein the forming of the thin film comprises:

depositing a solution comprising a polymeric material with a pendant polycyclic aromatic compound precursor onto the dielectric material;

removing a solvent from the deposited solution to form a thin film of the polymeric material with a pendant polycyclic aromatic compound precursor; and

heating the substrate to form the thin film comprising a polycyclic aromatic compound in a polymer matrix.