US20120256181A1 - Power-generating module with solar cell and method for fabricating the same - Google Patents

Power-generating module with solar cell and method for fabricating the same Download PDF

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Publication number
US20120256181A1
US20120256181A1 US13/158,045 US201113158045A US2012256181A1 US 20120256181 A1 US20120256181 A1 US 20120256181A1 US 201113158045 A US201113158045 A US 201113158045A US 2012256181 A1 US2012256181 A1 US 2012256181A1
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layer
solar cell
power
sccm
oxide layer
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US13/158,045
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Jia-Min Shieh
Chang-Hong Shen
Wen-Hsien Huang
Bau-Tong Dai
Jung Y. Huang
Hao-Chung Kuo
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National Applied Research Laboratories
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National Applied Research Laboratories
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Assigned to NATIONAL APPLIED RESEARCH LABORATORIES reassignment NATIONAL APPLIED RESEARCH LABORATORIES ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DAI, BAU-TONG, HUANG, WEN-HSIEN, HUANG, JUNG Y., KUO, HAO-CHUNG, SHEN, Chang-hong, SHIEH, JIA-MIN
Publication of US20120256181A1 publication Critical patent/US20120256181A1/en
Priority to US14/075,472 priority Critical patent/US9040333B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the present invention is related to a power-generating module with solar cell and method for fabricating the same, and more particularly, the invention to a power-generating module that integrates thin film solar cell and circuit unit and method for fabricating the same.
  • flexible substrate has been gradually introduced into the electronic product to replace traditional substrate.
  • plastic substrate has been used to replace the glass substrate in liquid crystal display to manufacture flexible display such as electronic paper. Due to the limited volume of such electronic products, if thin solar cells can be integrated therein, it will be helpful to improve the entire design structure and extending the utilization time.
  • the glass transition temperatures of the frequently used flexible substrate today such as poly ethylene naphthalate (PEN) and poly ethylene terephthalate (PET) are 80° C. and 120° C. respectively.
  • PECVD plasma-enhanced chemical vapor deposition
  • the scope of the invention is to provide a power-generating module with solar cell to solve the above-mentioned problems of the prior art.
  • the power-generating module with solar cell includes: a flexible substrate, a circuit unit and a solar cell unit. Wherein, both of the circuit unit and the solar cell unit are formed on the flexible substrate and coupled to one another, so that the solar cell unit can provide the power needed for the operation of the circuit unit.
  • the flexible substrate is polyethylene naphthalate (PEN) substrate, polyethylene terephthalate (PET) substrate or polyimide substrate.
  • the circuit unit can be thin film transistor made by inductive coupling plasma technology, and the electron mobility thereof can be about 1.1 cm 2 /V-s.
  • the solar cell unit further comprises: a first oxide layer, a p-i-n multi-layer structure, a second oxide layer, a first conductive layer and a second conductive layer.
  • the p-i-n multi-layer structure is formed on the first oxide layer;
  • the second oxide layer is formed on the p-i-n multi-layer structure;
  • the first conductive layer is formed on the second oxide layer; and
  • the second conductive layer is formed on the first oxide layer.
  • the first oxide layer is formed of transparent conducting oxide (TCO), and the second oxide layer is formed of Indium Tin Oxide (ITO).
  • TCO transparent conducting oxide
  • ITO Indium Tin Oxide
  • the first conductive layer and the second conductive layer are formed of Aluminum.
  • the photovoltaic conversion efficiency of the solar cell unit is about 9.6%.
  • Another scope of the invention is to provide a method for fabricating a power-generating module with solar cell to solve the above-mentioned problems of the prior art.
  • the method includes the following steps of: providing a flexible substrate; forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than 150° C.; and forming a circuit unit on the flexible substrate; wherein the solar cell unit is coupled to circuit unit to provide the power needed for the operation of the circuit unit.
  • the steps of forming the solar cell unit include the steps of forming a p-type layer, an i-type layer and a n-type layer sequentially, so as to form a p-i-n multi-layer structure.
  • the process condition of the p-type layer includes a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W and a deposition rate between 2 and 5 A/s.
  • the reaction gas to form the p-type layer includes SiH 4 having a flow rate between 6 and 15 sccm; H 2 having a flow rate between 100 and 250 sccm; B 2 H 6 having a flow rate between 0.5 and 1.5 sccm; and Ar having a flow rate between 100 and 200 sccm.
  • the process condition of the i-type layer include a process pressure between 600 and 1200 mTorr, a process power between 15 and 40 W and a deposition rate between 1 and 2.5 A/s.
  • the reaction gas to form the i-type layer includes SiH 4 having a flow rate between 10 and 20 sccm; H 2 having a flow rate between 100 and 250 sccm, and Ar having a flow rate between 100 and 200 sccm.
  • the process condition of the n-type layer includes a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W and a deposition rate between 2 and 4 A/s.
  • the reaction gas to form the n-type layer includes SiH 4 having a flow rate between 6 and 15 sccm; H 2 having a flow rate between 100 and 250 sccm; PH 3 having a flow rate between 0.5 and 1.5 sccm, and Ar having a flow rate between 100 and 200 sccm.
  • the invention has the following advantages of: low temperature growth, low ion bombardment, high deposition rate and enlargement of the area of the solar cell. Accordingly, the power-generating module with solar cell of the invention can be successfully formed on the flexible substrate to show high conversion efficiency and high electron mobility.
  • FIG. 1 illustrates a cross-sectional view of the power-generating module with solar cell according to one embodiment of the invention.
  • FIG. 2 illustrates a flow chart of the method of fabricating the power-generating module with solar cell based on one embodiment of the invention.
  • FIG. 3 illustrates the flow chart of step S 400 in FIG. 2 .
  • FIGS. 4A , 4 B and 4 C illustrate respectively charts made based on the p-type layer, i-type layer and n-type layer of one embodiment of the invention.
  • FIGS. 5A and 5B illustrate the voltage, current density, wavelength and quantum efficiency of the amorphous silicon thin film solar cell unit of one embodiment of the invention, the solar cell unit is formed by using high density plasma technology at a process temperature of 140° C.
  • the invention provides a power-generating module with solar cell and a method for fabricating the same.
  • the embodiments and practical applications of the invention are described in detail, so as to explain the features, spirit and advantages of the invention.
  • FIG. 1 illustrates the cross-sectional view of one embodiment of the power-generating module with solar cell of the current invention.
  • the power-generating module with solar cell 1 of the invention mainly includes a flexible substrate 10 , a thin film transistor 12 and a solar cell unit 14 .
  • both of the thin film transistor 12 and the solar cell unit 14 are formed on the flexible substrate 10 .
  • the flexible substrate 10 can be, but not limited to PEN substrate, PET substrate or polyimide substrate.
  • the thin film transistor 12 of the embodiment can be replaced with any other suitable circuit unit, such as an electronic sensor and an electronic label, etc.
  • the thin film transistor 12 includes an active layer 120 , a source electrode structure 122 , a drain electrode structure 124 , a gate electrode structure 126 and an insulating structure 128 .
  • the active layer 120 is formed on the flexible substrate 10 ; the source electrode structure 122 and the drain electrode structure 124 are all formed on the active layer 120 ; and the gate electrode structure 126 is formed in between the source electrode structure 122 and the drain electrode structure 124 .
  • the insulating structure 128 encloses the active layer 120 , the source electrode structure 122 , the drain electrode structure 124 and the gate electrode structure 126 .
  • the thin film transistor 12 can include several contact structures (not shown), which are formed on the source electrode structure 122 , the drain electrode structure 124 and the gate electrode structure 126 respectively, and exposed out of the insulating structure 128 .
  • the insulating structure 128 can be made of SiO 2 or other suitable material.
  • the solar cell unit 14 includes: a metallic layer 140 , a first oxide layer 142 , a p-i-n multi-layer structure 144 , a second oxide layer 146 , a first conductive layer 148 a and a second conductive layer 148 b.
  • the metallic layer 140 is formed on the flexible substrate 10 , and the metallic layer 140 can be made of Aluminum or other suitable material.
  • the first oxide layer 142 is formed on the metallic layer 140 , and the first oxide layer 142 can be made of transparent conducting oxide (TCO) or other suitable material.
  • the p-i-n multi-layer structure 144 is formed on the first oxide layer 142 .
  • the p-i-n multi-layer structure 144 includes a n-type layer 144 a , an i-type layer 144 b and a p-type layer 144 c .
  • the n-type layer 144 a , the i-type layer 144 b and the p-type layer 144 c can be hydrogenated amorphous silicon (a-Si:H) or other suitable material.
  • Second oxide layer 146 is formed on the p-i-n multi-layer structure 144 , and the second oxide layer 146 can be made of Indium Tin Oxide (ITO) or other suitable material.
  • the first conductive layer 148 a is formed on the second oxide layer 146
  • second conductive layer 148 b is formed on the first oxide layer 142 .
  • the first conductive layer 148 a and the second conductive layer 148 b can be made of Aluminum or other suitable material.
  • the solar cell unit 14 can be coupled to the thin film transistor 12 through circuit (not shown).
  • the circuit can be a voltage and current control circuit, or other suitable circuit.
  • FIG. 2 shows a flow chart of the method of fabricating the power-generating module with solar cell according to one preferred embodiment of the invention. As shown in the figure, the method includes the following steps:
  • Step S 300 providing a flexible substrate, which can be PET, PEN, polyimide or other suitable substrate, as described above.
  • Step S 400 forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than 150° C.
  • Step S 500 forming a circuit unit on the flexible substrate, as described above, the circuit unit can be thin film transistor or other suitable circuit units.
  • Step S 600 coupling the solar cell unit to the circuit unit, so that the solar cell unit can provide the power needed for the operation of the circuit unit.
  • the order of the above-mentioned steps can be optionally changed, and is not limited to the embodiment.
  • step S 400 can further includes the following steps of:
  • Step S 401 forming a metallic layer on the flexible substrate.
  • Step S 402 forming a first oxide layer on the metallic layer.
  • the first oxide layer can be formed by sputtering or other suitable method.
  • Step 403 forming a n-type layer, an i-type layer and a p-type layer on the first oxide layer sequentially by using high density plasma at a temperature lower than 150° C., to form a p-i-n multi-layer structure.
  • Step 404 forming a second oxide layer on the p-i-n multi-layer structure.
  • the second oxide layer can be formed by sputtering or other methods.
  • Step S 405 forming a first conductive layer on the second oxide layer.
  • Step S 406 etching the p-i-n multi-layer structure so as to expose at least a part of the first oxide layer.
  • Step S 407 forming a second conductive layer above the exposed part of the first oxide layer.
  • step S 406 can be carried out optionally, or be replaced with other step(s).
  • the first conductive layer and the second conductive layer can be formed by electron gun or other suitable method.
  • table 1 which lists the process parameters of the p-i-n multi-layer structure of the solar cell.
  • the process conditions of the n-type layer include a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W, a process temperature between 60 and 150° C., and a deposition rate between 2 and 4 A/s.
  • the n-type layer can be formed of a reaction gas mixture including SiH 4 , H 2 , PH 3 and Ar, wherein the flow rate of SiH 4 is between 6 and 15 sccm, the flow rate of H 2 is between 100 and 250 sccm, the flow rate of PH 3 is between 0.5 and 1.5 sccm, and the flow rate of Ar is between 100 and 200 sccm.
  • the process conditions of the i-type layer include a process pressure between 600 and 1200 mTorr, a process power between 15 and 40 W, a process temperature between 60 and 150° C. and a deposition rate between 1 and 2.5 A/s.
  • the i-type layer can be formed of a reaction gas mixture including SiH 4 , H 2 and Ar, wherein the flow rate of SiH 4 is between 10 and 20 sccm, the flow rate of H 2 is between 100 and 250 sccm, and the flow rate of Ar is between 100 and 200 sccm.
  • the process conditions of the p-type layer include a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W, a process temperature between 60 and 150° C. and a deposition rate between 2 and 5 A/s.
  • the p-type layer can be formed of a mixture of reaction gas including SiH 4 , H 2 , B 2 H 6 and Ar, wherein the flow rate of SiH 4 is between 6 and 15 sccm, the flow rate of H 2 is between 100 and 250 sccm, the flow rate of B 2 H 6 is between 0.5 and 1.5 sccm, and the flow rate of Ar is between 100 and 200 sccm.
  • FIG. 4A p-type layer
  • FIG. 4B i-type layer
  • FIG. 4C n-type layer
  • the process conditions of the second oxide layer include a process pressure between 50 and 80 mTorr, a process power between 200 and 500 W, a process temperature between 80 and 150° C., and a deposition rate between 1 and 2 A/s.
  • the etching conditions of step 406 include a process pressure between 5 and 30 mTorr, and CF 4 with a flow rate between 150 and 200 sccm and Ar with a flow rate between 50 and 100 sccm is used.
  • FIGS. 5A and 5B shows, based on an embodiment of the invention, the voltage, current density, wavelength and quantum efficiency of an amorphous silicon thin film solar cell unit (with p-i-n multi-layer structure having a thickness of 400 nm) deposited by using high density plasma technology at a process temperature of 140° C.
  • the photovoltaic conversion efficiency of the amorphous silicon thin film solar cell unit is measured as 9.6%.
  • the photovoltaic conversion efficiencies of the solar cell are 9.6%, 6.9% and 4.6% respectively.
  • the open circuit voltage, fill factor, conversion efficiency and efficiency spectrum of the solar cell are all shown to tend to be optimized with the rising of temperature.
  • the dark saturation current of the amorphous silicon thin film deposited by using inductive plasma coupling technology can still be lower than 6 ⁇ 10 ⁇ 8 A/cm 2 . This proves that even under low temperature, the defect density of the amorphous thin film fabricated in the invention is still very low.
  • the Si thin film deposited by using the method of the invention can be evenly deposited no matter on planarized or roughening substrate, and no discontinuity or vacancy will be generated on the interface between Si thin film and transparent conductive layer, so as to reach a extreme broad band quantum efficiency spectrum (300 to 750 nm).
  • the thin film transistor of the invention can be formed, at a process temperature of 140° C., by using inductive coupling plasma technology.
  • the electron mobility of the thin film transistor is measured to be about 1.1 cm2/V-s, and the thin film transistor can have a very high driving current.
  • the thin film transistor can have a very low dangling bond density, which results in a low sub-threshold swing and low off-state current.
  • the power-generating module with solar cell of the invention is formed by using high density plasma technology, it has advantages such as low temperature growth, low ion bombardment, high deposition rate and enlargement of the area of the solar cell. Therefore, the power-generating module with solar cell of the invention can be successfully formed on the flexible substrate with characteristics such as high conversion efficiency and high electron mobility.

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Abstract

The invention discloses a power-generating module with solar cell and method for fabricating the same. The power-generating module includes a flexible substrate, a circuit and a solar cell. Both of the circuit and the solar cell are formed on the flexible substrate and are connected with each other, such that the solar cell is capable of providing the power needed by the circuit for operation.

Description

    FIELD OF THE INVENTION
  • The present invention is related to a power-generating module with solar cell and method for fabricating the same, and more particularly, the invention to a power-generating module that integrates thin film solar cell and circuit unit and method for fabricating the same.
    • BACKGROUND OF THE INVENTION
  • In highly e-oriented era, all the tools needed in human life and work have integrated with some kinds of electronic components. For example, computer, cellular phone, camera, automobile and motorcycle, a variety of household appliance and manufacturing equipment, etc. Although e-oriented life has brought great convenience to human, due to the need of continuous power supply for the operation of electronic components, use of electrical power, such as battery or home/industrial level of DC or AC power is also increased accordingly.
  • Under the situation of limited traditional energy and easy generation of pollution, there is a need for new pollution-free energy. Therefore, many related organizations have devoted to the development of wind energy, tidal energy and solar energy. Therefore, many kinds of related power generating products have been developed, among them, the application in solar energy field is the most eye-catching one. With the development of semiconductor technology, a light and compact solar cell is now available in the market, in the mean time, it is integrated with some electronic products to provide the power needed for the operation of the electronic products.
  • In addition, in order to simplify the process of electronic product, reduce the manufacturing cost and expand the application scope, flexible substrate has been gradually introduced into the electronic product to replace traditional substrate. For example, plastic substrate has been used to replace the glass substrate in liquid crystal display to manufacture flexible display such as electronic paper. Due to the limited volume of such electronic products, if thin solar cells can be integrated therein, it will be helpful to improve the entire design structure and extending the utilization time.
  • However, the glass transition temperatures of the frequently used flexible substrate today, such as poly ethylene naphthalate (PEN) and poly ethylene terephthalate (PET) are 80° C. and 120° C. respectively.
  • This makes it difficult to take the high temperature in the process of plasma-enhanced chemical vapor deposition (PECVD) for the fabrication of solar cells. In addition, if the temperature of the process of PECVD is reduced, for example, lower than 150° C., then the photovoltaic conversion efficiency of the solar cell will be very poor.
    • SUMMARY OF THE INVENTION
  • Accordingly, the scope of the invention is to provide a power-generating module with solar cell to solve the above-mentioned problems of the prior art.
  • In an aspect of the invention, the power-generating module with solar cell includes: a flexible substrate, a circuit unit and a solar cell unit. Wherein, both of the circuit unit and the solar cell unit are formed on the flexible substrate and coupled to one another, so that the solar cell unit can provide the power needed for the operation of the circuit unit.
  • In one embodiment, the flexible substrate is polyethylene naphthalate (PEN) substrate, polyethylene terephthalate (PET) substrate or polyimide substrate. In one embodiment, the circuit unit can be thin film transistor made by inductive coupling plasma technology, and the electron mobility thereof can be about 1.1 cm2/V-s.
  • In one embodiment, the solar cell unit further comprises: a first oxide layer, a p-i-n multi-layer structure, a second oxide layer, a first conductive layer and a second conductive layer. Wherein, the p-i-n multi-layer structure is formed on the first oxide layer; the second oxide layer is formed on the p-i-n multi-layer structure; the first conductive layer is formed on the second oxide layer; and the second conductive layer is formed on the first oxide layer.
  • In one embodiment, the first oxide layer is formed of transparent conducting oxide (TCO), and the second oxide layer is formed of Indium Tin Oxide (ITO). In one embodiment, the first conductive layer and the second conductive layer are formed of Aluminum. In one embodiment, the photovoltaic conversion efficiency of the solar cell unit is about 9.6%.
  • Another scope of the invention is to provide a method for fabricating a power-generating module with solar cell to solve the above-mentioned problems of the prior art.
  • In an aspect of the invention, the method includes the following steps of: providing a flexible substrate; forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than 150° C.; and forming a circuit unit on the flexible substrate; wherein the solar cell unit is coupled to circuit unit to provide the power needed for the operation of the circuit unit.
  • In one embodiment, the steps of forming the solar cell unit include the steps of forming a p-type layer, an i-type layer and a n-type layer sequentially, so as to form a p-i-n multi-layer structure. In practice, the process condition of the p-type layer includes a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W and a deposition rate between 2 and 5 A/s. In addition, the reaction gas to form the p-type layer includes SiH4 having a flow rate between 6 and 15 sccm; H2 having a flow rate between 100 and 250 sccm; B2H6 having a flow rate between 0.5 and 1.5 sccm; and Ar having a flow rate between 100 and 200 sccm.
  • In practice, the process condition of the i-type layer include a process pressure between 600 and 1200 mTorr, a process power between 15 and 40 W and a deposition rate between 1 and 2.5 A/s. In addition, the reaction gas to form the i-type layer includes SiH4 having a flow rate between 10 and 20 sccm; H2 having a flow rate between 100 and 250 sccm, and Ar having a flow rate between 100 and 200 sccm.
  • In practice, the process condition of the n-type layer includes a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W and a deposition rate between 2 and 4 A/s. In addition, the reaction gas to form the n-type layer includes SiH4 having a flow rate between 6 and 15 sccm; H2 having a flow rate between 100 and 250 sccm; PH3 having a flow rate between 0.5 and 1.5 sccm, and Ar having a flow rate between 100 and 200 sccm.
  • By using the high density plasma technology to form the power-generating module with solar cell, the invention has the following advantages of: low temperature growth, low ion bombardment, high deposition rate and enlargement of the area of the solar cell. Accordingly, the power-generating module with solar cell of the invention can be successfully formed on the flexible substrate to show high conversion efficiency and high electron mobility.
  • For the advantages and spirit regarding the present invention, further understanding can be achieved through the following detailed description and attached drawings of the present invention.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 illustrates a cross-sectional view of the power-generating module with solar cell according to one embodiment of the invention.
  • FIG. 2 illustrates a flow chart of the method of fabricating the power-generating module with solar cell based on one embodiment of the invention.
  • FIG. 3 illustrates the flow chart of step S400 in FIG. 2.
  • FIGS. 4A, 4B and 4C illustrate respectively charts made based on the p-type layer, i-type layer and n-type layer of one embodiment of the invention.
  • FIGS. 5A and 5B illustrate the voltage, current density, wavelength and quantum efficiency of the amorphous silicon thin film solar cell unit of one embodiment of the invention, the solar cell unit is formed by using high density plasma technology at a process temperature of 140° C.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • The invention provides a power-generating module with solar cell and a method for fabricating the same. In the followings, the embodiments and practical applications of the invention are described in detail, so as to explain the features, spirit and advantages of the invention.
  • Please refer to FIG. 1, which illustrates the cross-sectional view of one embodiment of the power-generating module with solar cell of the current invention. As shown in the figure, the power-generating module with solar cell 1 of the invention mainly includes a flexible substrate 10, a thin film transistor 12 and a solar cell unit 14.
  • Wherein, both of the thin film transistor 12 and the solar cell unit 14 are formed on the flexible substrate 10. In practice, the flexible substrate 10 can be, but not limited to PEN substrate, PET substrate or polyimide substrate. In addition, the thin film transistor 12 of the embodiment can be replaced with any other suitable circuit unit, such as an electronic sensor and an electronic label, etc.
  • As shown in the figure, the thin film transistor 12 includes an active layer 120, a source electrode structure 122, a drain electrode structure 124, a gate electrode structure 126 and an insulating structure 128. The active layer 120 is formed on the flexible substrate 10; the source electrode structure 122 and the drain electrode structure 124 are all formed on the active layer 120; and the gate electrode structure 126 is formed in between the source electrode structure 122 and the drain electrode structure 124. The insulating structure 128 encloses the active layer 120, the source electrode structure 122, the drain electrode structure 124 and the gate electrode structure 126. In addition, the thin film transistor 12 can include several contact structures (not shown), which are formed on the source electrode structure 122, the drain electrode structure 124 and the gate electrode structure 126 respectively, and exposed out of the insulating structure 128. In practice, the insulating structure 128 can be made of SiO2 or other suitable material.
  • As shown in the figure, the solar cell unit 14 includes: a metallic layer 140, a first oxide layer 142, a p-i-n multi-layer structure 144, a second oxide layer 146, a first conductive layer 148 a and a second conductive layer 148 b.
  • Wherein, the metallic layer 140 is formed on the flexible substrate 10, and the metallic layer 140 can be made of Aluminum or other suitable material. The first oxide layer 142 is formed on the metallic layer 140, and the first oxide layer 142 can be made of transparent conducting oxide (TCO) or other suitable material.
  • The p-i-n multi-layer structure 144 is formed on the first oxide layer 142. In addition, the p-i-n multi-layer structure 144 includes a n-type layer 144 a, an i-type layer 144 b and a p-type layer 144 c. In practice, the n-type layer 144 a, the i-type layer 144 b and the p-type layer 144 c can be hydrogenated amorphous silicon (a-Si:H) or other suitable material.
  • Second oxide layer 146 is formed on the p-i-n multi-layer structure 144, and the second oxide layer 146 can be made of Indium Tin Oxide (ITO) or other suitable material. In addition, the first conductive layer 148 a is formed on the second oxide layer 146, and second conductive layer 148 b is formed on the first oxide layer 142. In practice, the first conductive layer 148 a and the second conductive layer 148 b can be made of Aluminum or other suitable material.
  • Additionally, in practice, the solar cell unit 14 can be coupled to the thin film transistor 12 through circuit (not shown). The circuit can be a voltage and current control circuit, or other suitable circuit.
  • Please refer to FIG. 2, which shows a flow chart of the method of fabricating the power-generating module with solar cell according to one preferred embodiment of the invention. As shown in the figure, the method includes the following steps:
  • Step S300, providing a flexible substrate, which can be PET, PEN, polyimide or other suitable substrate, as described above. Step S400, forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than 150° C. Step S500, forming a circuit unit on the flexible substrate, as described above, the circuit unit can be thin film transistor or other suitable circuit units. Step S600, coupling the solar cell unit to the circuit unit, so that the solar cell unit can provide the power needed for the operation of the circuit unit. Please note that, in practice, the order of the above-mentioned steps can be optionally changed, and is not limited to the embodiment.
  • Please refer to FIG. 3, which further illustrates a flow chart of S400 of FIG. 2. As shown in the figure, step S400 can further includes the following steps of:
  • Step S401, forming a metallic layer on the flexible substrate. Step S402 forming a first oxide layer on the metallic layer. In practice, the first oxide layer can be formed by sputtering or other suitable method. Step 403, forming a n-type layer, an i-type layer and a p-type layer on the first oxide layer sequentially by using high density plasma at a temperature lower than 150° C., to form a p-i-n multi-layer structure.
  • Step 404, forming a second oxide layer on the p-i-n multi-layer structure. In practice, the second oxide layer can be formed by sputtering or other methods. Step S405, forming a first conductive layer on the second oxide layer. Step S406, etching the p-i-n multi-layer structure so as to expose at least a part of the first oxide layer. Step S407, forming a second conductive layer above the exposed part of the first oxide layer.
  • Please note that, step S406 can be carried out optionally, or be replaced with other step(s). Additionally, in practice, the first conductive layer and the second conductive layer can be formed by electron gun or other suitable method.
  • The process conditions of the above steps will be described in more detail as follows.
  • Please refer to table 1, which lists the process parameters of the p-i-n multi-layer structure of the solar cell.
  • The process conditions of the n-type layer include a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W, a process temperature between 60 and 150° C., and a deposition rate between 2 and 4 A/s. Meanwhile, in one embodiment, the n-type layer can be formed of a reaction gas mixture including SiH4, H2, PH3 and Ar, wherein the flow rate of SiH4 is between 6 and 15 sccm, the flow rate of H2 is between 100 and 250 sccm, the flow rate of PH3 is between 0.5 and 1.5 sccm, and the flow rate of Ar is between 100 and 200 sccm.
  • The process conditions of the i-type layer include a process pressure between 600 and 1200 mTorr, a process power between 15 and 40 W, a process temperature between 60 and 150° C. and a deposition rate between 1 and 2.5 A/s. Meanwhile, in one embodiment, the i-type layer can be formed of a reaction gas mixture including SiH4, H2 and Ar, wherein the flow rate of SiH4 is between 10 and 20 sccm, the flow rate of H2 is between 100 and 250 sccm, and the flow rate of Ar is between 100 and 200 sccm.
  • The process conditions of the p-type layer include a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W, a process temperature between 60 and 150° C. and a deposition rate between 2 and 5 A/s. Meanwhile, in one embodiment, the p-type layer can be formed of a mixture of reaction gas including SiH4, H2, B2H6 and Ar, wherein the flow rate of SiH4 is between 6 and 15 sccm, the flow rate of H2 is between 100 and 250 sccm, the flow rate of B2H6 is between 0.5 and 1.5 sccm, and the flow rate of Ar is between 100 and 200 sccm.
  • TABLE 1
    Doping
    gas/flow
    SiH4:H2 rate Ar Pressure Dep. rate
    Layer (sccm) (sccm) (sccm) (mTorr) power Thickness (A/s)
    p 10:200 B2H6/1.3 200 900 52 12 3.1
    i 15:150 — 100 700 18 400 1.3
    n 10:200  PH3/0.5 200 900 45 20 1.73
  • The characteristics of layers formed are illustrated sequentially in FIG. 4A (p-type layer), FIG. 4B (i-type layer) and FIG. 4C (n-type layer).
  • The process conditions of the second oxide layer include a process pressure between 50 and 80 mTorr, a process power between 200 and 500 W, a process temperature between 80 and 150° C., and a deposition rate between 1 and 2 A/s. In addition, the etching conditions of step 406 include a process pressure between 5 and 30 mTorr, and CF4 with a flow rate between 150 and 200 sccm and Ar with a flow rate between 50 and 100 sccm is used.
  • Please refer to FIGS. 5A and 5B, which shows, based on an embodiment of the invention, the voltage, current density, wavelength and quantum efficiency of an amorphous silicon thin film solar cell unit (with p-i-n multi-layer structure having a thickness of 400 nm) deposited by using high density plasma technology at a process temperature of 140° C. In addition, the photovoltaic conversion efficiency of the amorphous silicon thin film solar cell unit is measured as 9.6%.
  • In another embodiment, when the amorphous silicon solar cell with the p-i-n multi-layer structure having a thickness of 300 nm is fabricated under process temperatures of 140° C., 90° C. and 60° C. respectively, the photovoltaic conversion efficiencies of the solar cell are 9.6%, 6.9% and 4.6% respectively. In addition, from related experiments, the open circuit voltage, fill factor, conversion efficiency and efficiency spectrum of the solar cell are all shown to tend to be optimized with the rising of temperature.
  • In addition, even if the process temperature is lowered to 60° C., the dark saturation current of the amorphous silicon thin film deposited by using inductive plasma coupling technology can still be lower than 6×10−8 A/cm2. This proves that even under low temperature, the defect density of the amorphous thin film fabricated in the invention is still very low.
  • Through the confirmation of experiment, the Si thin film deposited by using the method of the invention can be evenly deposited no matter on planarized or roughening substrate, and no discontinuity or vacancy will be generated on the interface between Si thin film and transparent conductive layer, so as to reach a extreme broad band quantum efficiency spectrum (300 to 750 nm).
  • In practice, the thin film transistor of the invention can be formed, at a process temperature of 140° C., by using inductive coupling plasma technology. The electron mobility of the thin film transistor is measured to be about 1.1 cm2/V-s, and the thin film transistor can have a very high driving current. In addition, the thin film transistor can have a very low dangling bond density, which results in a low sub-threshold swing and low off-state current.
  • To sum up, because the power-generating module with solar cell of the invention is formed by using high density plasma technology, it has advantages such as low temperature growth, low ion bombardment, high deposition rate and enlargement of the area of the solar cell. Therefore, the power-generating module with solar cell of the invention can be successfully formed on the flexible substrate with characteristics such as high conversion efficiency and high electron mobility.
  • While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (20)

1. A power-generating module with solar cell, comprising:
a flexible substrate;
a circuit unit, formed on the flexible substrate; and
a solar cell unit, formed on the flexible substrate and coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.
2. The power-generating module with solar cell of claim 1, wherein the flexible substrate is a PEN substrate, a PET substrate or a polyimide substrate.
3. The power-generating module with solar cell of claim 1, wherein the circuit unit is a thin film transistor.
4. The power-generating module with solar cell of claim 3, wherein the thin film transistor further comprises:
an active layer, formed on the flexible substrate;
a source electrode structure, formed on the active layer;
a drain electrode structure, formed on the active layer; and
a gate electrode structure, formed in between the source electrode structure and the drain electrode structure.
5. The power-generating module with solar cell of claim 3, wherein the electron mobility of the thin film transistor is about 1.1 cm2/V-s.
6. The power-generating module with solar cell of claim 1, wherein the solar cell unit further comprises:
a metallic layer, formed on the flexible substrate;
a first oxide layer, formed on the metallic layer;
a p-i-n multi-layer structure, formed on the first oxide layer;
a second oxide layer, formed on the p-i-n multi-layer structure;
a first conductive layer, formed on the second oxide layer; and
a second conductive layer, formed on the first oxide layer.
7. The power-generating module with solar cell of claim 6, wherein the first oxide layer is formed of transparent conducting oxide (TCO), and the second oxide layer is formed of Indium Tin Oxide (ITO).
8. The power-generating module with solar cell of claim 6, wherein the p-i-n multi-layer structure is an hydrogenated amorphous silicon structure.
9. The power-generating module with solar cell of claim 1, wherein the photovoltaic conversion efficiency of the solar cell unit is about 9.6%.
10. A method for fabricating a power-generating module with solar cell, comprising the following steps of:
providing a flexible substrate;
forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than about 150° C.; and
forming a circuit unit on the flexible substrate;
wherein the solar cell unit is coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.
11. The method of claim 10, wherein forming the solar cell unit further comprises the following steps of:
(a) forming a metallic layer on the flexible substrate;
(b) forming a first oxide layer on the metallic layer;
(c) forming a p-i-n multi-layer structure on the first oxide layer by using the high density plasma at a temperature lower than 150° C.;
(d) forming a second oxide layer on the p-i-n multi-layer structure;
(e) forming a first conductive layer on the second oxide layer; and
(f) forming a second conductive layer on the first oxide layer.
12. The method of claim 11, wherein the p-i-n multi-layer structure is a hydrogenated amorphous silicon structure.
13. The method of claim 11, further comprising the following steps in between step (e) and step (f):
(e′) etching the p-i-n multi-layer structure to expose at least a part of the first oxide layer, and the second conductive layer of step (f) is formed on the exposed part of the first oxide layer.
14. The method of claim 11, wherein step (c) further comprises the following steps of:
(c1) forming a n-type layer on the first oxide layer under a first process condition, wherein the first process condition comprises a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W and a deposition rate between 2 and 4 A/s;
(c2) forming an i-type layer on the n-type layer under a second process condition, wherein the second process condition comprises a process pressure between 600 and 1200 mTorr, a process power between 15 and 40 W and a deposition rate between 1 and 2.5 A/s; and
(c3) forming a p-type layer on the i-type layer under a third process condition, wherein the third process condition comprises a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W and a deposition rate between 2 and 5 A/s.
15. The method of claim 14, wherein in step (c1), the n-type layer is formed of a first reaction gas mixture, which comprises SiH4, H2, PH3 and Ar, wherein the flow rate of SiH4 is between 6 and 15 sccm, the flow rate of H2 is between 100 and 250 sccm, the flow rate of PH3 is between 0.5 and 1.5 sccm, and the flow rate of Ar is between 100 and 200 sccm.
16. The method of claim 14, wherein in step (c2), the i-type layer is formed of a second reaction gas mixture, which comprises SiH4, H2 and Ar, wherein the flow rate of SiH4 is between 10 and 20 sccm, the flow rate of H2 is between 100 and 250 sccm, and the flow rate of Ar is between 100 and 200 sccm.
17. The method of claim 14, wherein in step (c3), the p-type layer is formed of a third reaction gas mixture, which comprises SiH4, H2, B2H6 and Ar, wherein the flow rate of SiH4 is between 6 and 15 sccm, the flow rate of H2 is between 100 and 250 sccm, the flow rate of B2H6 is between 0.5 and 1.5 sccm, and the flow rate of Ar is between 100 and 200 sccm.
18. The method of claim 11, wherein the first oxide layer is formed of transparent conducting oxide (TCO), and the second oxide layer is formed of Indium Tin Oxide (ITO).
19. The method of claim 10, wherein the flexible substrate is a PEN substrate, a PET substrate or a polyimide substrate.
20. The method of claim 10, wherein the circuit unit is made of inductive coupling plasma technology.
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