US20120057422A1 - Low power sense amplifier for reading memory - Google Patents
Low power sense amplifier for reading memory Download PDFInfo
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- US20120057422A1 US20120057422A1 US12/876,064 US87606410A US2012057422A1 US 20120057422 A1 US20120057422 A1 US 20120057422A1 US 87606410 A US87606410 A US 87606410A US 2012057422 A1 US2012057422 A1 US 2012057422A1
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- sense amplifier
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Definitions
- This subject matter is generally related to electronics, and more particularly to low power sense amplifiers for reading memory.
- Radio Frequency Identification (RFID) tags need low read currents in their embedded non-volatile memory (NVM) to maximize reading distance from an RFID transmitter.
- NVM embedded non-volatile memory
- One known approach to sensing the state of a NVM cell is to set up read conditions on the memory cell and compare a cell current to a reference current that is generated in a sense amplifier.
- a drawback of these designs, however, is that direct current is consumed by each sense amplifier.
- the direct current consumption can be in the order of 10 s of microamperes to 100 s of microamperes per sense amplifier depending on the read speed desired.
- the direct current consumed is multiplied by the number of sense amplifiers in the circuit. This total current adversely affects the read range of the RFID tag.
- the direct current can be reduced somewhat by slowing the sense amplifier, but it cannot be reduced beyond a certain point because there is a maximum read time allowed in the system.
- a low power sense amplifier is configured to sense the state of a memory cell (e.g., non-volatile memory cell) without the use of a reference current or direct current.
- the low power sense amplifier may include one or more of the following advantages: 1) reducing the average and instantaneous power requirements of the low power sense amplifier to approximately 1 microampere per sense amplifier or less, when operated at 500 KHz; 2) eliminating the need for a reference current; and 3) eliminating the need for direct current (dc) consumed in the low power sense amplifier when reading or not reading memory.
- FIG. 1 is a schematic diagram of a low power sense amplifier.
- FIG. 2 is a timing diagram illustrating a read “ 0 ” memory transaction performed by the low power sense amplifier of FIG. 1 .
- FIG. 3 is a timing diagram illustrating a read “ 1 ” memory transaction performed by the low power sense amplifier of FIG. 1 .
- FIG. 1 is a schematic diagram of a low power sense amplifier 100 .
- the power sense amplifier 100 can include pre-charge circuit 103 , sense capacitor circuit 105 , voltage detection circuit 107 , delay path 109 and output latch circuit 120 .
- Pre-charge circuit 103 can include transistor 102 (e.g., a p-channel transistor) and optionally current limiting resistor 104 .
- the gate terminal of transistor 102 is coupled to a read sense input (read_sense).
- the source terminal of transistor 102 is coupled to a reference voltage (vdd), and the drain terminal of transistor 102 is coupled to resistor 104 .
- resistor 104 can be omitted and the drain terminal of transistor 102 can be coupled to the drain terminal of transistor 108 (e.g., p-channel transistor).
- Sense capacitor circuit 105 can include sense capacitor 106 and transistor 108 .
- the gate terminal of transistor 108 is coupled to delay path 109 .
- the source terminal of transistor 108 is coupled to a first terminal of sense capacitor 106 .
- a second terminal of sense capacitor 106 can be coupled to ground (gnd).
- the drain terminal of transistor 108 is coupled to the drain terminal of transistor 102 (or optionally resistor 104 ) and voltage detection circuit 107 .
- the drain terminals of transistors 102 , 108 are coupled to a memory output line (oline), which can be coupled to a memory cell through a y-decoding path (not shown).
- Voltage detection circuit 107 can include Schmitt trigger 114 and series inverters 116 , 118 .
- the input of the Schmitt trigger 114 is coupled to the memory output line (oline).
- the output of the Schmitt trigger 114 is coupled to the input of inverter 116 .
- the output of inverter 116 is coupled to the input of inverter 118 .
- the output of inverter 118 is coupled to the gate terminal of transistor 112 (e.g., n-channel transistor).
- Delay path 109 can include series inverters 110 a - 110 c and transistor 112 .
- the three series inverters can optionally be replaced with an odd number of inverters.
- the input of inverter 110 a is coupled to the gate terminal of transistor 108 and the gate terminal of transistor 112 .
- the output of inverter 110 c is coupled to the source terminal of transistor 112 .
- the drain terminal of transistor 112 is coupled to output latch 120 .
- Output latch circuit 120 can include inverter 122 , NAND gate 126 and resistor 124 .
- the input of inverter 122 is coupled to the drain of transistor 112 and a first terminal of resistor 124 .
- the output of inverter 122 is coupled to a first input of NAND gate 126 and the input of inverter 128 .
- a second terminal of resistor 124 is coupled to the output of NAND gate 126 .
- a second input of NAND gate 126 is a sense amplifier reset input (sa_resetb).
- the output of inverter 128 is a data output line (dout).
- resistor 124 is optional and can be omitted. In such a configuration, the output of NAND gate 126 can be directly coupled to the input of inverter 122 .
- FIGS. 2 and 3 (with reference to FIG. 1 ), will now be described to illustrate the operation of sense amplifier 100 during read “ 0 ” and read “ 1 ” memory transactions.
- FIG. 2 is a timing diagram illustrating a read “ 0 ” memory transaction performed by the power sense amplifier 100 of FIG. 1 .
- read_sense input (a timed signal) is low, causing sense capacitor 106 to be charged slowly to the reference voltage (vdd) using transistor 102 through optional resistor 104 .
- the voltage on the gate terminal of transistor 108 is low, allowing sense capacitor 106 to be charged to a voltage (ncap) equal to the voltage reference (vdd).
- sa_resetb input is pulsed low (at time t 0 ) to set the output of NAND gate 126 high, and thus the data output line (dout) is also set high (at time t 2 ) by virtue of series inverters 122 , 128 .
- the pre-charge path through transistor 102 is cut off.
- the memory output line (oline) is at the reference voltage (vdd) and its voltage might dip slightly due to charge sharing.
- the size of sense capacitor 106 can be selected to be significantly larger than the capacitance on the memory output line (oline) to avoid a large dip in voltage due to charge sharing.
- the voltage (ncap) stored on sense capacitor 106 starts discharging due to the memory cell current.
- the slope of the voltage on the memory output line (oline) depends on the memory cell current.
- the output terminal of Schmitt trigger 114 goes high, causing the output of inverter 116 to go low and the voltage on the gate terminal of transistor 108 to go high.
- the high voltage on the gate terminal of transistor 108 causes transistor 108 to be turned off due to the connection of the gate terminal of transistor 108 to the output of inverter 118 .
- Sense capacitor 106 is disconnected from the memory output line (oline). At this time the memory output line (oline) may continue to discharge (e.g., discharge to ground) due to the memory cell current, as illustrated in FIG. 2 , or the discharge may end earlier, depending on the timing of the read. However, the voltage on the sense capacitor 106 remains at the threshold of the voltage detection circuit 107 . The sense capacitor 106 does not need to be pre-charged from ground potential, thus resulting in a lower current operation of the circuit.
- transistor 112 When the voltage on the gate terminal of transistor 108 is high, the gate terminal of transistor 112 is also high and transistor 112 is open. With transistor 112 open, inverters 110 a - 110 c will invert and delay the voltage on the gate terminal of transistor 108 . A low voltage on the source terminal of transistor 112 (output of inverter 110 c ) overpowers output latch 120 at the output of inverter 122 and pulls the voltage at the input of inverter 122 low. The output of inverter 128 or data output line (dout) will go low as a result (at time t 2 ).
- FIG. 3 is a timing diagram illustrating a read “ 1 ” memory transaction performed by the low power sense amplifier 100 of FIG. 1 . If a memory cell has a higher threshold and negligible cell current, the memory output line (oline) will not discharge enough so as to trip Schmitt trigger 114 . The data output line (dout) remains high. The memory output line (oline) is disconnected from the memory cell when the read_sense input goes low (at time t 2 ). This starts a pre-charge of the memory output line (oline) and the voltage on the gate terminal of transistor 108 goes low, thus opening transistor 108 .
- sense capacitor 106 While sense capacitor 106 charges back to the reference voltage (vdd) for the next read, sa_resetb input (a timed signal) is pulsed low (at time t 3 ) to set the data output line (dout) back to high for all sense amplifiers in the circuit, including the sense amplifiers that read a “ 0 .”
Abstract
Description
- This subject matter is generally related to electronics, and more particularly to low power sense amplifiers for reading memory.
- Low power devices like Radio Frequency Identification (RFID) tags need low read currents in their embedded non-volatile memory (NVM) to maximize reading distance from an RFID transmitter. One known approach to sensing the state of a NVM cell is to set up read conditions on the memory cell and compare a cell current to a reference current that is generated in a sense amplifier. There are several known circuit designs to produce the reference current. A drawback of these designs, however, is that direct current is consumed by each sense amplifier. The direct current consumption can be in the order of 10 s of microamperes to 100 s of microamperes per sense amplifier depending on the read speed desired. The direct current consumed is multiplied by the number of sense amplifiers in the circuit. This total current adversely affects the read range of the RFID tag. The direct current can be reduced somewhat by slowing the sense amplifier, but it cannot be reduced beyond a certain point because there is a maximum read time allowed in the system.
- A low power sense amplifier is configured to sense the state of a memory cell (e.g., non-volatile memory cell) without the use of a reference current or direct current.
- The low power sense amplifier may include one or more of the following advantages: 1) reducing the average and instantaneous power requirements of the low power sense amplifier to approximately 1 microampere per sense amplifier or less, when operated at 500 KHz; 2) eliminating the need for a reference current; and 3) eliminating the need for direct current (dc) consumed in the low power sense amplifier when reading or not reading memory.
-
FIG. 1 is a schematic diagram of a low power sense amplifier. -
FIG. 2 is a timing diagram illustrating a read “0” memory transaction performed by the low power sense amplifier ofFIG. 1 . -
FIG. 3 is a timing diagram illustrating a read “1” memory transaction performed by the low power sense amplifier ofFIG. 1 . -
FIG. 1 is a schematic diagram of a lowpower sense amplifier 100. In some implementations, thepower sense amplifier 100 can includepre-charge circuit 103,sense capacitor circuit 105,voltage detection circuit 107,delay path 109 andoutput latch circuit 120. -
Pre-charge circuit 103 can include transistor 102 (e.g., a p-channel transistor) and optionally current limitingresistor 104. The gate terminal oftransistor 102 is coupled to a read sense input (read_sense). The source terminal oftransistor 102 is coupled to a reference voltage (vdd), and the drain terminal oftransistor 102 is coupled toresistor 104. Alternatively,resistor 104 can be omitted and the drain terminal oftransistor 102 can be coupled to the drain terminal of transistor 108 (e.g., p-channel transistor). -
Sense capacitor circuit 105 can includesense capacitor 106 andtransistor 108. The gate terminal oftransistor 108 is coupled todelay path 109. The source terminal oftransistor 108 is coupled to a first terminal ofsense capacitor 106. A second terminal ofsense capacitor 106 can be coupled to ground (gnd). The drain terminal oftransistor 108 is coupled to the drain terminal of transistor 102 (or optionally resistor 104) andvoltage detection circuit 107. The drain terminals oftransistors -
Voltage detection circuit 107 can include Schmitttrigger 114 andseries inverters trigger 114 is coupled to the memory output line (oline). The output of the Schmitttrigger 114 is coupled to the input ofinverter 116. The output ofinverter 116 is coupled to the input ofinverter 118. The output ofinverter 118 is coupled to the gate terminal of transistor 112 (e.g., n-channel transistor). -
Delay path 109 can include series inverters 110 a-110 c andtransistor 112. The three series inverters can optionally be replaced with an odd number of inverters. The input ofinverter 110 a is coupled to the gate terminal oftransistor 108 and the gate terminal oftransistor 112. The output ofinverter 110 c is coupled to the source terminal oftransistor 112. The drain terminal oftransistor 112 is coupled tooutput latch 120. -
Output latch circuit 120 can includeinverter 122, NANDgate 126 andresistor 124. The input ofinverter 122 is coupled to the drain oftransistor 112 and a first terminal ofresistor 124. The output ofinverter 122 is coupled to a first input ofNAND gate 126 and the input ofinverter 128. A second terminal ofresistor 124 is coupled to the output ofNAND gate 126. A second input ofNAND gate 126 is a sense amplifier reset input (sa_resetb). The output ofinverter 128 is a data output line (dout). In some implementations,resistor 124 is optional and can be omitted. In such a configuration, the output ofNAND gate 126 can be directly coupled to the input ofinverter 122. - Having now described an exemplary implementation of low
power sense amplifier 100.FIGS. 2 and 3 (with reference toFIG. 1 ), will now be described to illustrate the operation ofsense amplifier 100 during read “0” and read “1” memory transactions. -
FIG. 2 is a timing diagram illustrating a read “0” memory transaction performed by thepower sense amplifier 100 ofFIG. 1 . During a pre-charge phase (from time t0 to time t1), read_sense input (a timed signal) is low, causingsense capacitor 106 to be charged slowly to the reference voltage (vdd) usingtransistor 102 throughoptional resistor 104. During the pre-charge phase, the voltage on the gate terminal oftransistor 108 is low, allowingsense capacitor 106 to be charged to a voltage (ncap) equal to the voltage reference (vdd). While read_sense input is low, sa_resetb input is pulsed low (at time t0) to set the output ofNAND gate 126 high, and thus the data output line (dout) is also set high (at time t2) by virtue ofseries inverters - When read_sense input is high during a sensing phase (e.g., during time t1-t3), the pre-charge path through
transistor 102 is cut off. The memory output line (oline) is at the reference voltage (vdd) and its voltage might dip slightly due to charge sharing. The size ofsense capacitor 106 can be selected to be significantly larger than the capacitance on the memory output line (oline) to avoid a large dip in voltage due to charge sharing. The voltage (ncap) stored onsense capacitor 106 starts discharging due to the memory cell current. The slope of the voltage on the memory output line (oline) depends on the memory cell current. Once the voltage on the memory output line (oline) voltage reaches a threshold voltage level of Schmitt trigger 114 (at time t2), the output terminal of Schmitttrigger 114 goes high, causing the output ofinverter 116 to go low and the voltage on the gate terminal oftransistor 108 to go high. The high voltage on the gate terminal oftransistor 108 causestransistor 108 to be turned off due to the connection of the gate terminal oftransistor 108 to the output ofinverter 118.Sense capacitor 106 is disconnected from the memory output line (oline). At this time the memory output line (oline) may continue to discharge (e.g., discharge to ground) due to the memory cell current, as illustrated inFIG. 2 , or the discharge may end earlier, depending on the timing of the read. However, the voltage on thesense capacitor 106 remains at the threshold of thevoltage detection circuit 107. Thesense capacitor 106 does not need to be pre-charged from ground potential, thus resulting in a lower current operation of the circuit. - When the voltage on the gate terminal of
transistor 108 is high, the gate terminal oftransistor 112 is also high andtransistor 112 is open. Withtransistor 112 open, inverters 110 a-110 c will invert and delay the voltage on the gate terminal oftransistor 108. A low voltage on the source terminal of transistor 112 (output ofinverter 110 c) overpowersoutput latch 120 at the output ofinverter 122 and pulls the voltage at the input ofinverter 122 low. The output ofinverter 128 or data output line (dout) will go low as a result (at time t2). -
FIG. 3 is a timing diagram illustrating a read “1” memory transaction performed by the lowpower sense amplifier 100 ofFIG. 1 . If a memory cell has a higher threshold and negligible cell current, the memory output line (oline) will not discharge enough so as to tripSchmitt trigger 114. The data output line (dout) remains high. The memory output line (oline) is disconnected from the memory cell when the read_sense input goes low (at time t2). This starts a pre-charge of the memory output line (oline) and the voltage on the gate terminal oftransistor 108 goes low, thus openingtransistor 108. Whilesense capacitor 106 charges back to the reference voltage (vdd) for the next read, sa_resetb input (a timed signal) is pulsed low (at time t3) to set the data output line (dout) back to high for all sense amplifiers in the circuit, including the sense amplifiers that read a “0.” - While this document contains many specific implementation details, these should not be construed as limitations on the scope what may be claimed, but rather as descriptions of features that may be specific to particular embodiments. Certain features that are described in this specification in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable sub combination. Moreover, although features may be described above as acting in certain combinations and even initially claimed as such, one or more features from a claimed combination can in some cases be excised from the combination, and the claimed combination may be directed to a sub combination or variation of a sub combination.
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US12/876,064 US8130580B1 (en) | 2010-09-03 | 2010-09-03 | Low power sense amplifier for reading memory |
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TWI636456B (en) * | 2016-04-05 | 2018-09-21 | 美光科技公司 | Charge extraction from ferroelectric memory cell |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5696719A (en) * | 1995-12-28 | 1997-12-09 | Lg Semicon Co., Ltd. | Sense amplified output control circuit |
US6836426B1 (en) * | 2003-10-23 | 2004-12-28 | Fujitsu Limited | Semiconductor memory device with proper sensing timing |
US7333386B2 (en) * | 2002-02-11 | 2008-02-19 | Stmicroelectronics S.A. | Extraction of a binary code based on physical parameters of an integrated circuit through programming resistors |
US20100039851A1 (en) * | 2007-05-18 | 2010-02-18 | Fujitsu Microelectronics Limited | Semiconductor memory |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5696719A (en) * | 1995-12-28 | 1997-12-09 | Lg Semicon Co., Ltd. | Sense amplified output control circuit |
US7333386B2 (en) * | 2002-02-11 | 2008-02-19 | Stmicroelectronics S.A. | Extraction of a binary code based on physical parameters of an integrated circuit through programming resistors |
US6836426B1 (en) * | 2003-10-23 | 2004-12-28 | Fujitsu Limited | Semiconductor memory device with proper sensing timing |
US20100039851A1 (en) * | 2007-05-18 | 2010-02-18 | Fujitsu Microelectronics Limited | Semiconductor memory |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI636456B (en) * | 2016-04-05 | 2018-09-21 | 美光科技公司 | Charge extraction from ferroelectric memory cell |
US10192606B2 (en) * | 2016-04-05 | 2019-01-29 | Micron Technology, Inc. | Charge extraction from ferroelectric memory cell using sense capacitors |
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