US20110278674A1 - Trench isolation and method of fabricating trench isolation - Google Patents
Trench isolation and method of fabricating trench isolation Download PDFInfo
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- US20110278674A1 US20110278674A1 US13/192,561 US201113192561A US2011278674A1 US 20110278674 A1 US20110278674 A1 US 20110278674A1 US 201113192561 A US201113192561 A US 201113192561A US 2011278674 A1 US2011278674 A1 US 2011278674A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
Definitions
- the present invention relates to the field of integrated circuits and method of fabricating integrated circuits; more specifically, it relates to a trench isolation structure of integrated circuits and method of fabricating trench isolation during integrated circuit manufacture.
- CMOS Complementary metal-oxide-silicon
- PFETs p-channel field effect transistors
- NFETs n-channel field effect transistors
- Many integrated circuit designs require the devices (i.e., the PFETs and NFETs) to be placed adjacent to each other, which is accomplished by isolating the PFETs and NFETs with trench isolation.
- Trench isolation is essentially a dielectric filled trench formed in the silicon substrate that surrounds the perimeter of and electrically isolates the regions of the PFETs and NFETs formed in the silicon substrate from each other.
- a first aspect of the present invention is a method, comprising: (a) forming a trench in a silicon region of a substrate, the silicon region adjacent to a top surface of the substrate, the trench extending from the top surface of the substrate into the silicon region; (b) forming a stopping layer on sidewalls and a bottom of the trench; (c) removing the stopping layer from the bottom of the trench; (d) filling remaining space in the trench with a dielectric fill material, the dielectric fill material not including any materials found in the stopping layer; (e) performing an N-type ion implantation on a first side of the trench into a first region of the silicon region abutting the first side of the trench and into a first region of the dielectric material abutting the stopping layer on the first side of the trench; and (f) performing a P-type ion implantation on an second side of the trench into a second region of the silicon region abutting the second side of the trench and into a second region of the dielectric material abutting the
- a second aspect of the present invention is a method comprising: (a) forming a trench in a silicon region of a substrate, the silicon region adjacent to a top surface of the substrate, the trench extending from the top surface of the substrate into the silicon region; (b) forming an insulating layer on sidewalls and a bottom of the trench; (c) forming a stopping layer on the insulating layer; (d) filling remaining space in the trench with a dielectric fill material, the dielectric fill material not including any materials found in the stopping layer; (e) performing an N-type ion implantation on a first side of the trench into a first region of the silicon region abutting the first side of the trench and into a first region of the dielectric material abutting the insulating layer on the first side of the trench; and (f) performing a P-type ion implantation on an second side of the trench into a second region of the silicon region abutting the second side of the trench and into a second region of the dielectric material a
- a third aspect of the present invention is a structure, comprising: a trench in a silicon region of a substrate, the silicon region adjacent to a top surface of the substrate, the trench extending from the top surface of the substrate into the silicon region; a stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench, the second side of the trench opposite the first side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.
- FIG. 1A is a top view and FIG. 1B is a cross-sectional view through line 1 B- 1 B of FIG. 1A illustrating a defect mechanism related to the decreasing the width of trench isolation;
- FIGS. 2A through 2J are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a first embodiment of the present invention
- FIGS. 3A through 3C are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a second embodiment of the present invention.
- FIGS. 4A and 4B are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a third embodiment of the present invention.
- FIGS. 5A through 5C are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a fourth embodiment of the present invention.
- FIG. 1A is a top view and FIG. 1B is a cross-sectional view through line 1 B- 1 B of FIG. 1A illustrating a defect mechanism related to the decreasing width of the trench isolation.
- a semiconductor substrate 100 includes an N-well region 105 and a P-well region 110 separated by dielectric trench isolation 115 . Note N-well 105 and P-well 110 abut under trench isolation 115 .
- Formed on a top surface 120 of substrate 100 is a gate dielectric layer 125 and formed on a top surface 130 of the gate dielectric layer is an electrically conductive gate electrode 135 .
- a PFET 145 is formed in N-well 105 .
- PFET 145 includes first and second source/drain 150 A and 150 B formed in N-well 105 on opposite sides of gate electrode 135 and first and second source/drain extensions 155 A and 155 B formed in the N-well under opposite edges of the gate electrode.
- First and second source/drains 155 A and 155 B abut trench isolation 115 and extend from top surface 120 of substrate 100 into N-well 105 , but not through the bottom of the N-well.
- First and second source/drain extensions 155 A and 155 B abut trench isolation 115 and abut first and second source/drains 150 A and 150 B and extend from top surface 120 of substrate 100 into N-well 105 , but not as far into the N-well as first and second source/drains 155 A and 155 B.
- First and second source/drains 155 A and 155 B and first and second source/drain extensions 155 A and 155 B are doped P-type.
- N-well 105 is doped N-type and forms the channel region of PFET 145 .
- NFET 160 is formed in N-well 105 .
- NFET 160 includes first and second source/drain 165 A and 165 B formed in P-well 110 on opposite sides of gate electrode 135 and first and second source/drain extensions 170 A and 170 B formed in the P-well under opposite edges of the gate electrode.
- First and second source/drains 170 A and 170 B abut trench isolation 115 and extend from top surface 120 of substrate 100 into P-well 110 , but not through the bottom of the P-well.
- First and second source/drain extensions 170 A and 170 B abut trench isolation 115 and abut first and second source/drains 165 A and 165 B and extend from top surface 120 of substrate 100 into P-well 110 , but not as far into the P-well as first and second source/drains 170 A and 170 B.
- First and second source/drains 170 A and 170 B and first and second source/drain extensions 170 A and 170 B are doped N-type.
- P-well 110 is doped P-type and forms the channel region of NFET 160 .
- N-well 105 and P-well 115 are formed by separate ion-implantations of dopant species through respective blocking layers whose edges overlay an already formed trench isolation 115 .
- ion-implantation is subject to straggle. Straggle is the deflection of implanted species from their original trajectories as they penetrate into the target material, in the present case, N-well 105 and trench isolation 115 or P-well 110 and trench isolation 115 .
- P-type regions 140 A can form along the edges of the trench isolation in N-well 105 due to straggle of the P-well implant in trench isolation 115 and N-type regions 140 B can form along the edges of the trench isolation in P-well 110 due to straggle of the N-well implant in trench isolation 115 .
- P-type regions 140 A can cause leakage between the first and second source/drains 150 A and 150 B of PFET 145 and N-type regions 140 A can cause leakage between the first and second source/drains 165 A and 165 B of NFET 160 .
- region 140 A and 140 B The defect mechanism (regions 140 A and 140 B) illustrated in FIGS. 1A and 1B and described supra, were discovered by the inventors by studies related to measurement of NFET leakage currents that behaved as depletion layer punch through, but only for NFET devices proximate to PFET devices, and was found to track with certain of the N-well ion-implantation doses and was confirmed by running simulation models.
- FIGS. 2A through 2J are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a first embodiment of the present invention.
- a pad later 205 formed on a top surface 195 of a substrate 200 is a pad later 205 .
- Pad layer 205 acts as an etch stop layer, a polish stop layer and a hardmask layer.
- Pad layer 205 may comprise multiple layers.
- substrate 200 is single-crystal silicon.
- pad layer 205 comprises a layer of silicon nitride over a layer of silicon dioxide, the silicon dioxide contacting substrate 200 .
- Opening 210 is formed in pad layer 210 to expose top surface 195 of substrate 200 in the opening. Opening 200 is in the pattern of the trench isolation required for the integrated circuit being fabricated. Opening 210 may be formed photolithographically by (1) forming a photoresist layer on top of the pad layer, (2) exposing the photoresist layer to actinic radiation through a patterned photomask, (3) developing the photoresist layer to transfer the pattern of the photomask into the photoresist layer, (4) etching (e.g., reactive ion etching (RIE)) though the pad layer not protected by the patterned photoresist layer, (5) removing the photoresist layer.
- RIE reactive ion etching
- a trench 215 is etched into substrate 200 through opening 210 in pad layer 205 .
- Trench 215 has a depth D and a width W (where an N-well and a P-Well will be subsequently formed).
- trench 215 is formed by a RIE process.
- D is less than about 350 nm and W is less than about 120 nm.
- the ratio of D/W is equal to or greater than 3.
- a stopping layer 220 is conformally formed over top surface 225 of pad layer 205 and the sides 230 and bottom 235 of trench 215 .
- Stopping layer 220 comprises a material with a high ion implantation stopping power (e.g., is of sufficient density to prevent ions of P and N type dopant species to be later ion-implanted into the then filled trench 215 from penetrating into substrate 200 through stopping layer 220 on sidewalls 230 of trench 215 ).
- Stopping power is a measure of the thickness of a given layer of material needed to stop 100% of the ions implanted into the layer within the layer. Calculations of stopping power can be complex, but to a first order, stopping power is related to the density of the material of the layer.
- Stopping layer 220 is a dielectric material.
- suitable materials for stopping layer 220 include but are not limited to aluminum oxide (Al 2 O 3 ), silicon carbide, hafnium oxide (HfO 2 ) hafnium carbide, hafnium silicate (HfSi x O y ), tantalum oxide (Ta 2 O 5 ), zirconium oxide (ZrO 2 ) and combinations thereof.
- the density of stopping layer 220 is greater than about 3 grams/cm 3 , preferably greater than about 8 grams/cm 3 . Stopping layer 220 cannot be silicon dioxide or silicon nitride and are specifically excluded.
- the thickness of stopping layer 220 is between about 20 nm and about 75 nm.
- the thickness of stopping layer 220 is no greater than (W/4) see FIG. 2C . In one example, the thickness of stopping layer 220 is selected based on the density of the material of the stopping layer and the ion implant energy (e.g., KeV) of the implanted species.
- the ion implant energy e.g., KeV
- etch stop later 220 has been removed from top surface 225 of pad layer 205 and bottom 235 of trench 215 to form sidewall liner 230 on the sides 230 of the trench.
- This may be accomplished using an RIE process.
- the RIE process etches stopping layer 220 selective to substrate 200 (e.g., selective to silicon) and/or pad layer 205 .
- Etching a first layer “selective to” a second layer means a process that etches the first layer (e.g., stopping layer 220 ) faster than the second layer (e.g., substrate 200 and/or pad layer 205 ) or not at all.
- Sidewall liner 230 may also be called “spacers.” While the uppermost edge 242 of sidewall liner 240 are shown co-planar with top surface 225 of pad layer 205 , edge 242 may be recessed below top surface 225 or coplanar or recessed below top surface 195 of substrate 200 . In one example, it is advantageous that no stopping layer 220 (see FIG. 2D ) should remain on the bottom 235 of trench 215 , as penetration of the N-well and P-well ion implants described infra into substrate 200 under trench 215 is desirable in many cases.
- dielectric fill 245 is formed over all exposed surfaces pad layer 205 , sidewall liner 215 and bottom 235 of trench 215 .
- Dielectric fill 245 completely fills the remaining space in trench 215 .
- dielectric fill 245 is a high density plasma (HDP) silicon dioxide or tetraethoxysilane (TEOS) deposited silicon dioxide.
- Dielectric fill 245 and stopping layer 220 comprise different materials.
- Dielectric fill 245 includes no material found in stopping layer 220 .
- trench isolation 250 comprising sidewall liner 240 and dielectric fill 245 .
- a top surface 252 of trench isolation 250 is coplanar with top surface 225 of pad layer 205 . While edges 242 of sidewall liner 240 is illustrated as coplanar with top surface 225 of pad layer 205 , if the edges had been recessed as described supra, then the edges would be covered with dielectric fill 245 .
- an N-type ion implantation(s) 255 is performed into substrate 200 to form an N-well 260 A.
- a patterned photoresist layer 265 is formed over portions of substrate 200 where it is not desirable to form N-wells prior to the N-type ion implantation(s).
- An edge 267 of photoresist layer 265 is aligned over dielectric fill 245 . Because of sidewall liner 240 , little to none of the N-type dopant species implanted into dielectric fill can “straggle” into substrate 200 under photoresist layer 265 . Formation of patterned photoresist layers has been described supra. After the ion implantation, photoresist layer 265 is removed.
- a typical N-well ion implantation process includes multiple ion-implantations of N-type dopant species at different and progressively lower voltages. For example, three ion implantations of 400 KeV, 250 KeV and 50 KeV at doses in the 10 12 to 10 13 atom/cm 2 range.
- a P-type ion implantation(s) 270 is performed into substrate 200 to form a P-well 260 B.
- a patterned photoresist layer 275 is formed over portions of substrate 200 where it is not desirable to form P-wells prior to the P-type ion implantation(s).
- An edge 277 of photoresist layer 275 is aligned over dielectric fill 245 . Because of sidewall liner 240 , little to none of the P-type dopant species implanted into dielectric fill can “straggle” into substrate 200 under photoresist layer 275 . Formation of patterned photoresist layers has been described supra. After the ion implantation, photoresist layer 275 is removed.
- a typical P-well ion implantation process includes multiple ion-implantations of P-type dopant species at different and progressively lower voltages. For example, three ion implantations of 220 KeV, 120 KeV and 40 KeV at doses in the 10 12 to 10 13 atom/cm 2 range.
- the P-well ion implantation and related processes may be performed before the N-well ion implantation and related processes.
- pad layer 275 and PFET and NFET devices are fabricated including gate dielectric layer 125 and gate electrode 135 similar to FIGS. 1A and 1B without the straggle regions 140 A and 140 B.
- a simplified process sequence would include: (1) removing the pad layer, (2) forming a gate dielectric layer, (3) forming gate electrodes, (4) forming sidewall spacers on the sides of the gate electrodes, (5) ion implanting the NFET source/drains, (6) ion implanting the PFET source/drains, (7) ion implanting the NFET source/drain extensions, (8) ion implanting the PFET source/drain extensions, (9) forming contacts to the NFET and PFET source/drains and gate electrodes, forming wiring levels to connect the NFETs and PFETs into integrated circuits.
- the order of the ion implanting steps 5 through 8 may be changed.
- FIGS. 3A through 3C are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a second embodiment of the present invention.
- the second embodiment of the present inventions differs from the first embodiment in that it allows the use an electrically conductive (e.g., metal) stopping layer.
- Metals and electrical conductors generally have greater density and thus stopping power than dielectrics.
- the steps illustrated in FIGS. 2A through 2C and described supra, are performed prior to the processes illustrated in FIG. 3A .
- a insulating layer 280 is conformally formed over top surface 225 of pad layer 205 and the sides 230 and bottom 235 of trench 215 .
- insulating layer 280 comprises silicon dioxide, silicon nitride or another dielectric material.
- the thickness of insulating layer 280 is between about 20 nm and about 75 nm. In one example, the thickness of insulating layer 280 is no greater than (W/4) see FIG. 2C .
- sidewall liner 285 are formed over insulating layer 280 on sidewalls 230 of trench 215 .
- Sidewall liner 285 may be formed by conformally depositing a layer of liner material and performing a RIE to remove the horizontal portions (relative to top surface 195 of substrate 200 ) of the layer of liner material.
- Insulating layer 280 prevents sidewall liner 285 from shorting to substrate 200 . It is advantageous for uppermost edges 287 of sidewall liner 285 to be recessed below top surface 195 of substrate 200 to avoid electrical contact to subsequently formed gate electrodes.
- sidewall liner 285 examples include but are not limited to nickel, cobalt, copper, chromium, molybdenum, germanium, palladium, silver, hafnium, tungsten, tungsten carbide, tungsten nitride, gold, platinum, and combinations thereof.
- the density of sidewall liner 285 is greater than about 8 grams/cm 3 , preferably greater than about 12 grams/cm 3 .
- the thickness of sidewall liner 285 measured in a direction parallel to top surface 195 of substrate 200 is between about 20 nm and about 75 nm. In one example, the thickness of sidewall liner 285 is no greater than (W/4) see FIG. 2C .
- FIG. 3C the processes illustrated in FIGS. 2F and 2G and described supra are performed to form trench isolation 250 A comprising insulating layer 280 , sidewall liner 285 and dielectric fill 245 .
- stopping layer 220 is sufficiently thick to completely fill trench 215 and no dielectric fill 245 is required.
- FIGS. 4A and 4B are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a third embodiment of the present invention.
- the third embodiment of the present invention is similar to the first embodiment of the present invention, except, the process has been simplified for use with silicon-on-insulator (SOI) substrates.
- SOI silicon-on-insulator
- an SOI substrate 300 comprises a buried oxide (BOX) layer 305 between a lower silicon layer 305 and an upper silicon layer 315 .
- Trench 215 reaches to BOX layer 305 and stopping layer 220 is conformally formed on top of regions of BOX layer 305 exposed in bottom 235 of trench 215 .
- FIG. 4B the processes illustrated in FIGS. 2F and 2G and described supra are performed to form trench isolation 250 B comprising stopping layer 220 and dielectric fill 245 .
- the CMP step used to remove excess dielectric fill 245 may remove regions of blocking layer 220 in contact with top surface 225 of pad layer 205 , or the regions of blocking layer 220 in contact with top surface 225 of pad layer 205 may be removed when pad layer 205 is removed.
- FIGS. 5A through 5C are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a fourth embodiment of the present invention.
- the fourth embodiment of the present invention is similar to the second embodiment of the present invention, except, the process has been simplified for use with SOI substrates.
- the processes illustrated in FIGS. 2A through 2C and described supra, are performed prior to the step illustrated in FIG. 5A .
- trench 215 reaches to BOX layer 305 and insulating layer 220 is conformally formed on top of regions of BOX layer 305 exposed in bottom 235 of trench 215 . Then stopping layer 285 is conformally formed over insulating layer 280 . Insulating layer 280 prevents sidewall liner 285 from shorting to silicon layer 315 .
- sidewall liner 285 are formed over insulating layer 280 on sidewalls 230 of trench 215 as described supra with respect to FIG. 3B . It is advantageous for uppermost edges 287 of sidewall liner 285 to be recessed below top surface 325 of silicon layer 315 to avoid electrical contact to subsequently formed gate electrodes.
- FIG. 5C the processes illustrated in FIGS. 2F and 2G and described supra are performed to form trench isolation 250 C comprising insulating layer 280 , sidewall liner 285 and dielectric fill 245 .
- the CMP step used to remove excess dielectric fill 245 may remove regions of insulating layer 280 in contact with top surface 225 of pad layer 205 , or the regions of insulating layer 280 in contact with top surface 225 of pad layer 205 may be removed when pad layer 205 is removed.
- stopping layer 285 is sufficiently thick to completely fill trench 215 and no dielectric fill 245 is required.
- the present invention provides trench isolation structures and fabrication methodologies that allow decreasing dimensions of the trench isolation.
- the description of the embodiments of the present invention is given above for the understanding of the present invention. It will be understood that the invention is not limited to the particular embodiments described herein, but is capable of various modifications, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention.
- the first and third embodiments of the present invention may be performed on bulk silicon substrates (e.g. substrate 200 of, for example, FIG. 2A ). Therefore, it is intended that the following claims cover all such modifications and changes as fall within the true spirit and scope of the invention.
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Abstract
Description
- The present application is a division of U.S. patent application Ser. No. 11/839,585 filed Aug. 16, 2007.
- The present invention relates to the field of integrated circuits and method of fabricating integrated circuits; more specifically, it relates to a trench isolation structure of integrated circuits and method of fabricating trench isolation during integrated circuit manufacture.
- Complementary metal-oxide-silicon (CMOS) based integrated circuits utilize p-channel field effect transistors (PFETs) and n-channel field effect transistors (NFETs). Many integrated circuit designs require the devices (i.e., the PFETs and NFETs) to be placed adjacent to each other, which is accomplished by isolating the PFETs and NFETs with trench isolation. Trench isolation is essentially a dielectric filled trench formed in the silicon substrate that surrounds the perimeter of and electrically isolates the regions of the PFETs and NFETs formed in the silicon substrate from each other.
- However, with the ever increasing need for increased device density, the width of the trench isolation between adjacent devices is decreasing and defect free isolation structures are becoming more difficult to fabricate. Accordingly, there exists a need in the art to improve the trench isolation structure and fabrication methodologies to keep pace with the decreasing dimensions of the trench isolation.
- A first aspect of the present invention is a method, comprising: (a) forming a trench in a silicon region of a substrate, the silicon region adjacent to a top surface of the substrate, the trench extending from the top surface of the substrate into the silicon region; (b) forming a stopping layer on sidewalls and a bottom of the trench; (c) removing the stopping layer from the bottom of the trench; (d) filling remaining space in the trench with a dielectric fill material, the dielectric fill material not including any materials found in the stopping layer; (e) performing an N-type ion implantation on a first side of the trench into a first region of the silicon region abutting the first side of the trench and into a first region of the dielectric material abutting the stopping layer on the first side of the trench; and (f) performing a P-type ion implantation on an second side of the trench into a second region of the silicon region abutting the second side of the trench and into a second region of the dielectric material abutting the stopping layer on the second side of the trench, the second side of the trench opposite the first side of the trench.
- A second aspect of the present invention is a method comprising: (a) forming a trench in a silicon region of a substrate, the silicon region adjacent to a top surface of the substrate, the trench extending from the top surface of the substrate into the silicon region; (b) forming an insulating layer on sidewalls and a bottom of the trench; (c) forming a stopping layer on the insulating layer; (d) filling remaining space in the trench with a dielectric fill material, the dielectric fill material not including any materials found in the stopping layer; (e) performing an N-type ion implantation on a first side of the trench into a first region of the silicon region abutting the first side of the trench and into a first region of the dielectric material abutting the insulating layer on the first side of the trench; and (f) performing a P-type ion implantation on an second side of the trench into a second region of the silicon region abutting the second side of the trench and into a second region of the dielectric material abutting the stopping layer on the second side of the trench, the second side of the trench opposite the first side of the trench.
- A third aspect of the present invention is a structure, comprising: a trench in a silicon region of a substrate, the silicon region adjacent to a top surface of the substrate, the trench extending from the top surface of the substrate into the silicon region; a stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench, the second side of the trench opposite the first side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.
- The features of the invention are set forth in the appended claims. The invention itself, however, will be best understood by reference to the following detailed description of an illustrative embodiment when read in conjunction with the accompanying drawings, wherein:
-
FIG. 1A is a top view andFIG. 1B is a cross-sectional view throughline 1B-1B ofFIG. 1A illustrating a defect mechanism related to the decreasing the width of trench isolation; -
FIGS. 2A through 2J are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a first embodiment of the present invention; -
FIGS. 3A through 3C are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a second embodiment of the present invention; -
FIGS. 4A and 4B are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a third embodiment of the present invention; and -
FIGS. 5A through 5C are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a fourth embodiment of the present invention. -
FIG. 1A is a top view andFIG. 1B is a cross-sectional view throughline 1B-1B ofFIG. 1A illustrating a defect mechanism related to the decreasing width of the trench isolation. InFIGS. 1A and 1B , asemiconductor substrate 100 includes an N-well region 105 and a P-well region 110 separated bydielectric trench isolation 115. Note N-well 105 and P-well 110 abut undertrench isolation 115. Formed on atop surface 120 ofsubstrate 100 is a gatedielectric layer 125 and formed on atop surface 130 of the gate dielectric layer is an electricallyconductive gate electrode 135. - A
PFET 145 is formed in N-well 105. PFET 145 includes first and second source/drain well 105 on opposite sides ofgate electrode 135 and first and second source/drain extensions drains abut trench isolation 115 and extend fromtop surface 120 ofsubstrate 100 into N-well 105, but not through the bottom of the N-well. First and second source/drain extensions abut trench isolation 115 and abut first and second source/drains top surface 120 ofsubstrate 100 into N-well 105, but not as far into the N-well as first and second source/drains drains drain extensions well 105 is doped N-type and forms the channel region ofPFET 145. - An NFET 160 is formed in N-
well 105. NFET 160 includes first and second source/drain well 110 on opposite sides ofgate electrode 135 and first and second source/drain extensions drains abut trench isolation 115 and extend fromtop surface 120 ofsubstrate 100 into P-well 110, but not through the bottom of the P-well. First and second source/drain extensions abut trench isolation 115 and abut first and second source/drains top surface 120 ofsubstrate 100 into P-well 110, but not as far into the P-well as first and second source/drains drains drain extensions well 110 is doped P-type and forms the channel region of NFET 160. - Generally, N-
well 105 and P-well 115 are formed by separate ion-implantations of dopant species through respective blocking layers whose edges overlay an already formedtrench isolation 115. However, ion-implantation is subject to straggle. Straggle is the deflection of implanted species from their original trajectories as they penetrate into the target material, in the present case, N-well 105 andtrench isolation 115 or P-well 110 andtrench isolation 115. If the width oftrench isolation 115 between N-well and P-well 110 is too small, then P-type regions 140A can form along the edges of the trench isolation in N-well 105 due to straggle of the P-well implant intrench isolation 115 and N-type regions 140B can form along the edges of the trench isolation in P-well 110 due to straggle of the N-well implant intrench isolation 115. P-type regions 140A can cause leakage between the first and second source/drains PFET 145 and N-type regions 140A can cause leakage between the first and second source/drains - The defect mechanism (
regions FIGS. 1A and 1B and described supra, were discovered by the inventors by studies related to measurement of NFET leakage currents that behaved as depletion layer punch through, but only for NFET devices proximate to PFET devices, and was found to track with certain of the N-well ion-implantation doses and was confirmed by running simulation models. -
FIGS. 2A through 2J are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a first embodiment of the present invention. InFIG. 1A , formed on atop surface 195 of asubstrate 200 is a pad later 205.Pad layer 205 acts as an etch stop layer, a polish stop layer and a hardmask layer.Pad layer 205 may comprise multiple layers. In one example,substrate 200 is single-crystal silicon. In one example,pad layer 205 comprises a layer of silicon nitride over a layer of silicon dioxide, the silicondioxide contacting substrate 200. - In
FIG. 2B anopening 210 is formed inpad layer 210 to exposetop surface 195 ofsubstrate 200 in the opening.Opening 200 is in the pattern of the trench isolation required for the integrated circuit being fabricated. Opening 210 may be formed photolithographically by (1) forming a photoresist layer on top of the pad layer, (2) exposing the photoresist layer to actinic radiation through a patterned photomask, (3) developing the photoresist layer to transfer the pattern of the photomask into the photoresist layer, (4) etching (e.g., reactive ion etching (RIE)) though the pad layer not protected by the patterned photoresist layer, (5) removing the photoresist layer. - In
FIG. 2C , atrench 215 is etched intosubstrate 200 throughopening 210 inpad layer 205.Trench 215 has a depth D and a width W (where an N-well and a P-Well will be subsequently formed). In one example,trench 215 is formed by a RIE process. In one example D is less than about 350 nm and W is less than about 120 nm. In one example the ratio of D/W is equal to or greater than 3. - In
FIG. 2D , a stoppinglayer 220 is conformally formed overtop surface 225 ofpad layer 205 and thesides 230 andbottom 235 oftrench 215. Stoppinglayer 220 comprises a material with a high ion implantation stopping power (e.g., is of sufficient density to prevent ions of P and N type dopant species to be later ion-implanted into the then filledtrench 215 from penetrating intosubstrate 200 through stoppinglayer 220 onsidewalls 230 of trench 215). Stopping power is a measure of the thickness of a given layer of material needed to stop 100% of the ions implanted into the layer within the layer. Calculations of stopping power can be complex, but to a first order, stopping power is related to the density of the material of the layer. Stoppinglayer 220 is a dielectric material. Examples of suitable materials for stoppinglayer 220 include but are not limited to aluminum oxide (Al2O3), silicon carbide, hafnium oxide (HfO2) hafnium carbide, hafnium silicate (HfSixOy), tantalum oxide (Ta2O5), zirconium oxide (ZrO2) and combinations thereof. In one example the density of stoppinglayer 220 is greater than about 3 grams/cm3, preferably greater than about 8 grams/cm3. Stoppinglayer 220 cannot be silicon dioxide or silicon nitride and are specifically excluded. In one example the thickness of stoppinglayer 220 is between about 20 nm and about 75 nm. In one example, the thickness of stoppinglayer 220 is no greater than (W/4) seeFIG. 2C . In one example, the thickness of stoppinglayer 220 is selected based on the density of the material of the stopping layer and the ion implant energy (e.g., KeV) of the implanted species. - In
FIG. 2E , etch stop later 220 (seeFIG. 2D ) has been removed fromtop surface 225 ofpad layer 205 andbottom 235 oftrench 215 to formsidewall liner 230 on thesides 230 of the trench. This may be accomplished using an RIE process. In one example, the RIE process etches stoppinglayer 220 selective to substrate 200 (e.g., selective to silicon) and/orpad layer 205. (Etching a first layer “selective to” a second layer means a process that etches the first layer (e.g., stopping layer 220) faster than the second layer (e.g.,substrate 200 and/or pad layer 205) or not at all.Sidewall liner 230 may also be called “spacers.” While theuppermost edge 242 ofsidewall liner 240 are shown co-planar withtop surface 225 ofpad layer 205,edge 242 may be recessed belowtop surface 225 or coplanar or recessed belowtop surface 195 ofsubstrate 200. In one example, it is advantageous that no stopping layer 220 (seeFIG. 2D ) should remain on thebottom 235 oftrench 215, as penetration of the N-well and P-well ion implants described infra intosubstrate 200 undertrench 215 is desirable in many cases. - In
FIG. 2F , a layer ofdielectric fill 245 is formed over all exposedsurfaces pad layer 205,sidewall liner 215 andbottom 235 oftrench 215.Dielectric fill 245 completely fills the remaining space intrench 215. In one example,dielectric fill 245 is a high density plasma (HDP) silicon dioxide or tetraethoxysilane (TEOS) deposited silicon dioxide.Dielectric fill 245 and stoppinglayer 220 comprise different materials. In one example, Dielectric fill 245 includes no material found in stoppinglayer 220. - In
FIG. 2G , a chemical mechanical polish (CMP) has been performed to formtrench isolation 250 comprisingsidewall liner 240 anddielectric fill 245. Atop surface 252 oftrench isolation 250 is coplanar withtop surface 225 ofpad layer 205. Whileedges 242 ofsidewall liner 240 is illustrated as coplanar withtop surface 225 ofpad layer 205, if the edges had been recessed as described supra, then the edges would be covered withdielectric fill 245. - In
FIG. 2H , an N-type ion implantation(s) 255 is performed intosubstrate 200 to form an N-well 260A. A patternedphotoresist layer 265 is formed over portions ofsubstrate 200 where it is not desirable to form N-wells prior to the N-type ion implantation(s). Anedge 267 ofphotoresist layer 265 is aligned overdielectric fill 245. Because ofsidewall liner 240, little to none of the N-type dopant species implanted into dielectric fill can “straggle” intosubstrate 200 underphotoresist layer 265. Formation of patterned photoresist layers has been described supra. After the ion implantation,photoresist layer 265 is removed. - A typical N-well ion implantation process includes multiple ion-implantations of N-type dopant species at different and progressively lower voltages. For example, three ion implantations of 400 KeV, 250 KeV and 50 KeV at doses in the 1012 to 1013 atom/cm2 range.
- In
FIG. 2I , a P-type ion implantation(s) 270 is performed intosubstrate 200 to form a P-well 260B. A patternedphotoresist layer 275 is formed over portions ofsubstrate 200 where it is not desirable to form P-wells prior to the P-type ion implantation(s). Anedge 277 ofphotoresist layer 275 is aligned overdielectric fill 245. Because ofsidewall liner 240, little to none of the P-type dopant species implanted into dielectric fill can “straggle” intosubstrate 200 underphotoresist layer 275. Formation of patterned photoresist layers has been described supra. After the ion implantation,photoresist layer 275 is removed. - A typical P-well ion implantation process includes multiple ion-implantations of P-type dopant species at different and progressively lower voltages. For example, three ion implantations of 220 KeV, 120 KeV and 40 KeV at doses in the 1012 to 1013 atom/cm2 range.
- Note, the P-well ion implantation and related processes may be performed before the N-well ion implantation and related processes.
- In
FIG. 2J ,pad layer 275 and PFET and NFET devices are fabricated includinggate dielectric layer 125 andgate electrode 135 similar toFIGS. 1A and 1B without thestraggle regions -
FIGS. 3A through 3C are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a second embodiment of the present invention. The second embodiment of the present inventions differs from the first embodiment in that it allows the use an electrically conductive (e.g., metal) stopping layer. Metals and electrical conductors generally have greater density and thus stopping power than dielectrics. The steps illustrated inFIGS. 2A through 2C and described supra, are performed prior to the processes illustrated inFIG. 3A . - In
FIG. 3A , a insulatinglayer 280 is conformally formed overtop surface 225 ofpad layer 205 and thesides 230 andbottom 235 oftrench 215. In one example, insulatinglayer 280 comprises silicon dioxide, silicon nitride or another dielectric material. In one example the thickness of insulatinglayer 280 is between about 20 nm and about 75 nm. In one example, the thickness of insulatinglayer 280 is no greater than (W/4) seeFIG. 2C . - In
FIG. 3B ,sidewall liner 285 are formed overinsulating layer 280 onsidewalls 230 oftrench 215.Sidewall liner 285 may be formed by conformally depositing a layer of liner material and performing a RIE to remove the horizontal portions (relative totop surface 195 of substrate 200) of the layer of liner material. Insulatinglayer 280 preventssidewall liner 285 from shorting tosubstrate 200. It is advantageous foruppermost edges 287 ofsidewall liner 285 to be recessed belowtop surface 195 ofsubstrate 200 to avoid electrical contact to subsequently formed gate electrodes. Examples of suitable materials forsidewall liner 285 include but are not limited to nickel, cobalt, copper, chromium, molybdenum, germanium, palladium, silver, hafnium, tungsten, tungsten carbide, tungsten nitride, gold, platinum, and combinations thereof. In one example the density ofsidewall liner 285 is greater than about 8 grams/cm3, preferably greater than about 12 grams/cm3. In one example the thickness ofsidewall liner 285 measured in a direction parallel totop surface 195 ofsubstrate 200 is between about 20 nm and about 75 nm. In one example, the thickness ofsidewall liner 285 is no greater than (W/4) seeFIG. 2C . - In
FIG. 3C , the processes illustrated inFIGS. 2F and 2G and described supra are performed to formtrench isolation 250A comprising insulatinglayer 280,sidewall liner 285 anddielectric fill 245. The processes illustrated inFIGS. 2H through 2J and described supra, are next performed after the step illustrated inFIG. 3C with an N-well being formed inregion 290A and a P-well being formed inregion 290B ofsubstrate 200. - In a variant of the third embodiment of the present invention, stopping
layer 220 is sufficiently thick to completely filltrench 215 and nodielectric fill 245 is required. -
FIGS. 4A and 4B are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a third embodiment of the present invention. The third embodiment of the present invention is similar to the first embodiment of the present invention, except, the process has been simplified for use with silicon-on-insulator (SOI) substrates. The steps illustrated inFIGS. 2A through 2C and described supra, are performed prior to the step illustrated inFIG. 4A . - In
FIG. 4A , anSOI substrate 300 comprises a buried oxide (BOX)layer 305 between alower silicon layer 305 and anupper silicon layer 315.Trench 215 reaches to BOXlayer 305 and stoppinglayer 220 is conformally formed on top of regions ofBOX layer 305 exposed inbottom 235 oftrench 215. - In
FIG. 4B , the processes illustrated inFIGS. 2F and 2G and described supra are performed to formtrench isolation 250B comprising stoppinglayer 220 anddielectric fill 245. The processes illustrated inFIGS. 2I through 2J and described supra, are performed after the processes illustrated inFIG. 4B with an N-well being formed inregion 320A and a P-well being formed inregion 320B ofsilicon layer 315. Optionally, the CMP step used to remove excessdielectric fill 245 may remove regions of blockinglayer 220 in contact withtop surface 225 ofpad layer 205, or the regions of blockinglayer 220 in contact withtop surface 225 ofpad layer 205 may be removed whenpad layer 205 is removed. -
FIGS. 5A through 5C are cross-sectional drawings illustrating fabrication of trench isolation and device structures according to a fourth embodiment of the present invention. The fourth embodiment of the present invention is similar to the second embodiment of the present invention, except, the process has been simplified for use with SOI substrates. The processes illustrated inFIGS. 2A through 2C and described supra, are performed prior to the step illustrated inFIG. 5A . - In
FIG. 5A ,trench 215 reaches to BOXlayer 305 and insulatinglayer 220 is conformally formed on top of regions ofBOX layer 305 exposed inbottom 235 oftrench 215. Then stoppinglayer 285 is conformally formed overinsulating layer 280. Insulatinglayer 280 preventssidewall liner 285 from shorting tosilicon layer 315. - In
FIG. 5B ,sidewall liner 285 are formed overinsulating layer 280 onsidewalls 230 oftrench 215 as described supra with respect toFIG. 3B . It is advantageous foruppermost edges 287 ofsidewall liner 285 to be recessed belowtop surface 325 ofsilicon layer 315 to avoid electrical contact to subsequently formed gate electrodes. - In
FIG. 5C , the processes illustrated inFIGS. 2F and 2G and described supra are performed to formtrench isolation 250C comprising insulatinglayer 280,sidewall liner 285 anddielectric fill 245. The processes illustrated inFIGS. 2I through 2J and described supra, are performed after the processes illustrated inFIG. 5C with an N-well being formed inregion 320A and a P-well being formed inregion 320B ofsilicon layer 315. Optionally, the CMP step used to remove excessdielectric fill 245 may remove regions of insulatinglayer 280 in contact withtop surface 225 ofpad layer 205, or the regions of insulatinglayer 280 in contact withtop surface 225 ofpad layer 205 may be removed whenpad layer 205 is removed. - In a variant of the fourth embodiment of the present invention, stopping
layer 285 is sufficiently thick to completely filltrench 215 and nodielectric fill 245 is required. - Thus the present invention provides trench isolation structures and fabrication methodologies that allow decreasing dimensions of the trench isolation.
- The description of the embodiments of the present invention is given above for the understanding of the present invention. It will be understood that the invention is not limited to the particular embodiments described herein, but is capable of various modifications, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. For example, the first and third embodiments of the present invention may be performed on bulk silicon substrates (
e.g. substrate 200 of, for example,FIG. 2A ). Therefore, it is intended that the following claims cover all such modifications and changes as fall within the true spirit and scope of the invention.
Claims (15)
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US13/790,734 US20130189818A1 (en) | 2007-08-16 | 2013-03-08 | Trench isolation and method of fabricating trench isolation |
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US11/839,585 US8012848B2 (en) | 2007-08-16 | 2007-08-16 | Trench isolation and method of fabricating trench isolation |
US13/192,561 US20110278674A1 (en) | 2007-08-16 | 2011-07-28 | Trench isolation and method of fabricating trench isolation |
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US13/192,561 Abandoned US20110278674A1 (en) | 2007-08-16 | 2011-07-28 | Trench isolation and method of fabricating trench isolation |
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US8790991B2 (en) * | 2011-01-21 | 2014-07-29 | International Business Machines Corporation | Method and structure for shallow trench isolation to mitigate active shorts |
US20140213034A1 (en) * | 2013-01-29 | 2014-07-31 | United Microelectronics Corp. | Method for forming isolation structure |
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US8012848B2 (en) | 2011-09-06 |
US20130189818A1 (en) | 2013-07-25 |
US20090045468A1 (en) | 2009-02-19 |
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